JPH01225117A - Method and device for manufacturing semiconductor device - Google Patents
Method and device for manufacturing semiconductor deviceInfo
- Publication number
- JPH01225117A JPH01225117A JP63050961A JP5096188A JPH01225117A JP H01225117 A JPH01225117 A JP H01225117A JP 63050961 A JP63050961 A JP 63050961A JP 5096188 A JP5096188 A JP 5096188A JP H01225117 A JPH01225117 A JP H01225117A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- raw material
- ion
- sample
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000002994 raw material Substances 0.000 claims abstract description 36
- 150000002500 ions Chemical class 0.000 claims abstract description 25
- 229910052796 boron Inorganic materials 0.000 claims abstract description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 21
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000005468 ion implantation Methods 0.000 claims abstract description 13
- 229910000085 borane Inorganic materials 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 abstract description 14
- 238000009826 distribution Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000007787 solid Substances 0.000 abstract description 5
- -1 B4H Chemical compound 0.000 abstract description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- AIGRXSNSLVJMEA-FQEVSTJZSA-N ethoxy-(4-nitrophenoxy)-phenyl-sulfanylidene-$l^{5}-phosphane Chemical compound O([P@@](=S)(OCC)C=1C=CC=CC=1)C1=CC=C([N+]([O-])=O)C=C1 AIGRXSNSLVJMEA-FQEVSTJZSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 150000001793 charged compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法およびその製造装置に係
わり、特に半導体装置の製造において試料の表面から浅
い領域に不純物を導入する方法およびそれを実現する装
置に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device and an apparatus for manufacturing the same, and particularly to a method for introducing impurities into a shallow region from the surface of a sample in manufacturing a semiconductor device, and a method for introducing impurities into a shallow region from the surface of a sample in the manufacture of semiconductor devices. It is related to the device that realizes this.
一般にバイポーラトランジスタ、 ＭＯＳ ＦＥＴ等の
半導体装置において、動作を高速化するため、半導体基
板の表面に浅い不純物分布の形成が必要である。例えば
、３１−ＮＰＮ ）ランジスタにおいては、通常薄い酸
化膜を介したホウ素イオンの注入によってベース領域が
形成されてきた。Generally, in semiconductor devices such as bipolar transistors and MOS FETs, in order to speed up the operation, it is necessary to form a shallow impurity distribution on the surface of the semiconductor substrate. For example, in 31-NPN) transistors, the base region has typically been formed by implanting boron ions through a thin oxide film.
しかしながら、との稚の半導体装置では、ベース領域を
薄くするため、注入エネルギーを低くしても、イオン注
入時のチャネリング現象のためホウ素は深い位ｔｉｔま
で侵入する。これは、通常ガウス分布に指数関数型のテ
イルが付加された形の分布を形成する。このように低エ
ネルギーのホウ素イオン注入ではチャネリング現象のた
め、浅くて薄いベース領域を形成できないという問題が
あった。However, in modern semiconductor devices, even if the implantation energy is lowered to make the base region thinner, boron penetrates deeper into the hole due to the channeling phenomenon during ion implantation. This typically forms a Gaussian distribution with an exponential tail added. In this way, low-energy boron ion implantation has the problem of not being able to form a shallow and thin base region due to the channeling phenomenon.
したがって本発明は前述した従来の問題に鑑みてなされ
たものであり、その目的は、半導体装置の製造において
、ホウ素の分子もしくはクラスターイオンの生成法を簡
易化することにより、試料に浅いホウ素の不純物分布を
形成することができる半導体装置の製造方法およびその
製造装置を提供することにある。Therefore, the present invention has been made in view of the above-mentioned conventional problems, and its purpose is to simplify the method for generating boron molecules or cluster ions in the production of semiconductor devices, thereby eliminating shallow boron impurities in samples. An object of the present invention is to provide a method for manufacturing a semiconductor device and an apparatus for manufacturing the same, which can form a distribution.
本発明による半導体装置の製造方法は、イオン注入原料
としてボランもしくはこれらの誘導体を用い、ホウ素、
ホウ素と水素との分子もしくはクラスターイオンを試料
にイオン注入するものである。The method for manufacturing a semiconductor device according to the present invention uses borane or a derivative thereof as a raw material for ion implantation.
This method involves implanting molecules or cluster ions of boron and hydrogen into a sample.
本発明による半導体装置の製造装置は、ボランもしくは
これらの誘導体を充填する原料ボンベと、この原料ボン
ベを加熱するヒータと、この原料ボンベの温度を検知す
る温度センサと、この原料ボンベを一定の温度に制御す
る温度コントローラとを有するイオン発生手段をイオン
注入装置に設けたものである。The semiconductor device manufacturing apparatus according to the present invention includes a raw material cylinder filled with borane or a derivative thereof, a heater that heats this raw material cylinder, a temperature sensor that detects the temperature of this raw material cylinder, and a temperature sensor that maintains this raw material cylinder at a constant temperature. The ion implantation apparatus is provided with an ion generating means having a temperature controller for controlling the temperature.
本発明における半導体装置の製造方法において杜、イオ
ン注入用原料としてボランもしくはこれらの誘導体を用
いることによシ、従来の弗化ホウ素（ＢＦｓ）ガス等の
原料ガスもしくは他の固体系＋
料とは異なり、Ｂ部 Ｈｌｏ ＋ ＢＳ Ｈｌｌ ｅ
Ｂｓ Ｈ，＋ＢＩＯＨ１４１Ｂ、。Ｉ（ｔｓ等のホウ素
、ホウ素と水素との分子もしくはクラスターイオンを形
成しく ＢｘＨ７，ｘ≧２゜ｙ≧０〕、イオン注入され
る。In the method for manufacturing a semiconductor device according to the present invention, by using borane or a derivative thereof as a raw material for ion implantation, conventional raw material gas such as boron fluoride (BFs) gas or other solid material can be used. Differently, part B Hlo + BS Hll e
Bs H, +BIOH141B,. I (boron such as ts, BxH7, x≧2°y≧0) is implanted to form molecules or cluster ions of boron and hydrogen.
本発明における半導体装置の製造装置においては、イオ
ン注入用原料のうち、ペンタボラン以上の高次ボラン類
は久温で液体もしくは固体であシ、空気中の酸素に触れ
ると、爆発的に酸化される材料であるため、可熱可能な
密封ボンベに充填して使用することとし、イオン源外部
（イオン源をイオン注入装置Ｋ取シ付けたとき、大気９
！１となる部分）に原料ボンベを搭載し、イオン化部を
十分に排気した後、原料ボンベのパルプを開放し、原料
ボンベを加熱することにより、原料を気化させ、イオン
注入装置のイオン化部に送シ込む構成とすることによシ
、原料が直接空気との接触が防止され、従来の固体イオ
ン源と異なシ、原料は常に空気と触れることなく、液体
原料から低融点固体原料まで使用できる。In the semiconductor device manufacturing apparatus of the present invention, among the raw materials for ion implantation, higher-order boranes such as pentaborane and higher are liquid or solid at low temperatures, and are explosively oxidized when exposed to oxygen in the air. Because it is a material, it is used by filling it in a heatable sealed cylinder, and the outside of the ion source (when the ion source is attached to the ion implanter K, the atmosphere
! After the raw material cylinder is loaded into the ionization unit (part 1) and the ionization unit is fully evacuated, the pulp of the raw material cylinder is opened and the raw material cylinder is heated to vaporize the raw material and sent to the ionization unit of the ion implanter. The injection structure prevents the raw material from coming into direct contact with air, and unlike conventional solid ion sources, the raw material does not constantly come into contact with air, and can be used from liquid raw materials to low-melting point solid raw materials.
以下、図面を用いて本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による半導体装置の製造方法の一実施例
を説明するための製造装置の構成を示す図である。同図
において、イオン化部１．イオン化部１の支持を兼ねた
電流導入端子２および窒素もしくはアルゴンガスを導入
するガス導入管３を有するイオン源に、ボランもしくは
これらの誘導体等の原料ガスを導入するガス導入管４．
ストップバルブ５およびジヨイント６を取付けたＡ部と
、ストップバルブＴ、ボランもしくはこれらの誘導体等
の原料を充填した気密性の可熱可能な原料ボンベ、との
原料ボンベ８を加熱するヒータ９．原料ボンベ８の温度
を検知する温度センサ１０および原料ボンベ８を所定の
温度に保持する温度コントローラ１１を有するＢ部とか
ら構成されておシ、前記ストップバルブＴ、原料ボンベ
８．ヒータ９および温度センサ１０はシールドケース１
２内に収納され、前記イオン化部１．電流導入端子２お
よびガス導入管４は、矢印Ｃ方向で示す図示しないイオ
ン光学系へイオンを引き出すイオン引き出し電極１４を
有するイオン注入装置チャンバ１４内に収納されている
。そして、前記Ａ部は常時イオン注入装置本体Ｋｌ）付
けられ、ガス導入管３により窒素もしくはアルゴンガス
が導入され、イオンが注入できる状態となっている。FIG. 1 is a diagram showing the configuration of a manufacturing apparatus for explaining an embodiment of the method for manufacturing a semiconductor device according to the present invention. In the figure, ionization section 1. A gas introduction tube 4 for introducing a raw material gas such as borane or a derivative thereof into an ion source having a current introduction terminal 2 which also serves as a support for the ionization section 1 and a gas introduction tube 3 for introducing nitrogen or argon gas.
A heater 9 that heats the raw material cylinder 8 consisting of the section A to which the stop valve 5 and the joint 6 are attached, the stop valve T, and an airtight heatable raw material cylinder filled with a raw material such as borane or a derivative thereof. A section B includes a temperature sensor 10 that detects the temperature of the raw material cylinder 8 and a temperature controller 11 that maintains the raw material cylinder 8 at a predetermined temperature. Heater 9 and temperature sensor 10 are in shield case 1
2, and the ionization section 1. The current introduction terminal 2 and the gas introduction tube 4 are housed in an ion implanter chamber 14 having an ion extraction electrode 14 for extracting ions to an ion optical system (not shown) shown in the direction of arrow C. The section A is always attached to the ion implantation apparatus main body Kl), and nitrogen or argon gas is introduced through the gas introduction pipe 3, so that ions can be implanted.
このよう表構成において、ホウ素の分子イオン注入を行
なうためには、まず、Ｂ部をジヨイント６を介してＡ部
に接続し、ストップパルプ７を開放する。そしてＡ部の
チャンバ１４の真空度が約ｌＸｌ０ ”〒ｏｒｒ程度以
下となったら、ガス導入管３から窒素もしくはアルゴン
等の放電を維持するガスを導入し、プラズマを発生させ
、維持させる。次にヒータ９と温度コントローラ１１と
によシ、原料ボンベ８を加熱し、充填されている原料の
液体もしくは固体を気化させて蒸気圧を最適化する。こ
の場合、原料としてはテトラボランＢ４ Ｈｌｏ ＋ペ
ンタボランＢ５ Ｈ，ｌ Ｂ５ Ｈｌｌもしくはデカボ
ランＢ１゜Ｂ１４等のボランもしくはその誘導体が適用
される。以後は、通常のイオン注入装置の操作法にした
がって質量分析マグネットによシ必要か分子イオンの選
択を行なって試料に照射する。In such a table configuration, in order to implant boron molecular ions, first, part B is connected to part A via joint 6, and stop pulp 7 is opened. When the degree of vacuum in the chamber 14 in the A section becomes approximately 1X10'' or less, a gas that maintains the discharge, such as nitrogen or argon, is introduced from the gas introduction tube 3 to generate and maintain plasma.Next. The heater 9 and the temperature controller 11 heat the raw material cylinder 8 and vaporize the liquid or solid filled raw material to optimize the vapor pressure.In this case, the raw materials are tetraborane B4 Hlo + pentaborane B5. H,l B5 Hll or borane or its derivatives such as decaborane B1°B14 are applied.After that, the necessary molecular ions are selected using a mass spectrometer magnet according to the operation method of a normal ion implanter, and the sample is injected into the sample. irradiate.
本発明の一実施例としてボランもしくはその誘導体等の
原料として例えばペンタボランＢＳ Ｕ。In one embodiment of the present invention, as a raw material for borane or its derivatives, for example, pentaborane BSU is used.
を用い、その８５Ｈ，イオンを約１０ＫＶで加速し、単
結晶シリコン（Ｓｉ ）中に注入した結果を第２図に示
す。注入量はホウ素の原子密度でｌＸ１０５１である。Figure 2 shows the results of accelerating the 85H ions at about 10 KV and implanting them into single crystal silicon (Si). The implantation amount is 1×1051 in boron atomic density.
このように大きな分子イオンの注入を行なうと、高密度
の注入損傷が形成され、チャネリング現象を防止し、浅
い位置に不純物を導入することができる。さらに約６０
０℃付近でまず注入損傷を回復させるための熱処理を行
ない、次に７００〜９００℃程度の電気的活性化の熱処
理を行なう。これにより、注入時に導入される点欠陥に
よるホウ素原子の増速拡散を防止し、浅いＰ型層を形成
することができる。また、単結晶シリコン（Ｓｔ ）の
表面を酸化した後、前述したイオン注入を行なうことに
より、さらに浅い層を形成することができる。When such large molecular ions are implanted, a high-density implantation damage is formed, which prevents the channeling phenomenon and allows impurities to be introduced into a shallow position. Approximately 60 more
First, heat treatment is performed at around 0°C to recover from implantation damage, and then heat treatment for electrical activation is performed at about 700 to 900°C. Thereby, accelerated diffusion of boron atoms due to point defects introduced during implantation can be prevented, and a shallow P-type layer can be formed. Further, by oxidizing the surface of single crystal silicon (St 2 ) and then performing the ion implantation described above, an even shallower layer can be formed.
本発明の他の実施例として前述した実施例と同等条件で
シリコン酸化膜中にイオン注入した結果を第３図に示す
。このとき、水素原子も同時に注入され、その水素の効
果によシ酸化膜中におけるホウ素の拡散係数が大きくな
り、拡散しやすくなる。そこで、この酸化膜中のホウ素
を拡散源として下地の単結晶Ｓｉ中にホウ素の拡散を行
なうことにより、浅くて欠陥のないＰ型層を形成するこ
とができる。FIG. 3 shows the results of ion implantation into a silicon oxide film under conditions similar to those of the above-described embodiment as another embodiment of the present invention. At this time, hydrogen atoms are also implanted at the same time, and the effect of the hydrogen increases the diffusion coefficient of boron in the silicon oxide film, making it easier to diffuse. Therefore, by diffusing boron into the underlying single crystal Si using the boron in this oxide film as a diffusion source, a shallow P-type layer without defects can be formed.
以上説明したように本発明によれば、試料中の数１００
＾以下の浅い領域に高濃度Ｐ型層を形成することができ
るので、ＮＰＮ ）ランジスタのペース形成に適用す
れば、極めて薄いペース層が得られ、高速化が達成でき
る。また、ＰチャネルのＭＯＳ ＦＥＴ の浅いソ
ース、ドレイン接合部を形成できるなどの極めて優れた
効果が得られる。As explained above, according to the present invention, several hundred
Since it is possible to form a highly concentrated P-type layer in a shallow region of less than 2 cm, if applied to the formation of a paste for an NPN transistor, an extremely thin paste layer can be obtained and high speeds can be achieved. Furthermore, extremely excellent effects such as the ability to form shallow source and drain junctions of a P-channel MOS FET can be obtained.
第１図は本発明による半導体装置の製造方法の一実施例
を説明するための製造装置としてのイオン源の構成を示
す図、第２図は単結晶シリコン（Ｓｔ）中に Ｂ５Ｈ，
イオンを注入したときのホウ素の深さ方向の濃度分布を
示す図、第３図はシリコン酸化膜（Ｓ ｉ Ｃｈ）中に
Ｂ、Ｈ，イオンを注入したときのホウ素の深さ方向の濃
度分布を示す図である。
１・・・・イオン化部、２・Φ・・電流導入端子、３．
４・Φ・・ガス導入管、５・・・・ストップパルプ、６
・・・・ジヨイント、Ｔ・・・・ストップパルプ、８・
・−・原料ボンベ、９・・・・ヒータ、１０・・・・温
度センサ、１１・・・・温度コントローラ、１２・・拳
・シールドケース、１３・・・・イオン引き出し電極、
１４・・＠拳イオン注入装置チャンバ。
特許出願人 日本電信電話株式会社FIG. 1 is a diagram showing the configuration of an ion source as a manufacturing apparatus for explaining an embodiment of the method for manufacturing a semiconductor device according to the present invention, and FIG. 2 shows a structure in which B5H, B5H,
A diagram showing the concentration distribution of boron in the depth direction when ions are implanted. Figure 3 shows the concentration distribution of boron in the depth direction when B, H, and ions are implanted into a silicon oxide film (S i Ch). FIG. 1...Ionization part, 2.Φ...Current introduction terminal, 3.
4. Φ... Gas introduction pipe, 5... Stop pulp, 6
... joint, T ... stop pulp, 8.
- Raw material cylinder, 9... Heater, 10... Temperature sensor, 11... Temperature controller, 12... Fist/shield case, 13... Ion extraction electrode,
14...@Fist ion implanter chamber. Patent applicant Nippon Telegraph and Telephone Corporation
Claims (2)
誘導体を用い、ホウ素、ホウ素と水素との分子もしくは
クラスターイオンを試料にイオン注入することを特徴と
した半導体装置の製造方法。(1) A method for manufacturing a semiconductor device, which comprises using borane or a derivative thereof as a raw material for ion implantation, and implanting boron, molecules or cluster ions of boron and hydrogen into a sample.
ンベと、前記原料ボンベを加熱するヒータと、前記原料
ボンベの温度を検知する温度センサと、前記原料ボンベ
を一定の温度に制御する温度コントローラとからなるイ
オン発生手段をイオン注入装置に設けたことを特徴とす
る半導体装置の製造装置。(2) A raw material cylinder filled with borane or a derivative thereof, a heater that heats the raw material cylinder, a temperature sensor that detects the temperature of the raw material cylinder, and a temperature controller that controls the raw material cylinder to a constant temperature. 1. A semiconductor device manufacturing apparatus, characterized in that an ion implantation device is provided with an ion generating means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63050961A JPH01225117A (en) | 1988-03-04 | 1988-03-04 | Method and device for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63050961A JPH01225117A (en) | 1988-03-04 | 1988-03-04 | Method and device for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01225117A true JPH01225117A (en) | 1989-09-08 |
Family
ID=12873412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63050961A Pending JPH01225117A (en) | 1988-03-04 | 1988-03-04 | Method and device for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01225117A (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0857354A1 (en) * | 1995-08-14 | 1998-08-12 | Advanced Material Engineering Research | A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility |
| US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| EP1579481A2 (en) * | 2002-06-26 | 2005-09-28 | Semequip, Inc. | An ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| JP2005531158A (en) * | 2002-06-26 | 2005-10-13 | セムエキップ インコーポレイテッド | Semiconductor device and semiconductor device manufacturing method |
| JP2005531156A (en) * | 2002-06-26 | 2005-10-13 | セムエキップ インコーポレイテッド | Manufacturing method of CMOS device by implantation of N and P type cluster ions and anions |
| WO2007027798A3 (en) * | 2005-08-30 | 2007-05-03 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| JP2007521398A (en) * | 2003-12-12 | 2007-08-02 | セメクイップ， インコーポレイテッド | Control of vapor flow sublimated from solids |
| US8062965B2 (en) | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8138071B2 (en) | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8410459B2 (en) | 2002-06-26 | 2013-04-02 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| JP2013235992A (en) * | 2012-05-10 | 2013-11-21 | Ulvac Japan Ltd | Ion implantation method |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9012874B2 (en) | 2010-02-26 | 2015-04-21 | Entegris, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US9205392B2 (en) | 2010-08-30 | 2015-12-08 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
| US9938156B2 (en) | 2011-10-10 | 2018-04-10 | Entegris, Inc. | B2F4 manufacturing process |
| US9960042B2 (en) | 2012-02-14 | 2018-05-01 | Entegris Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| US10497569B2 (en) | 2009-07-23 | 2019-12-03 | Entegris, Inc. | Carbon materials for carbon implantation |
| US11062906B2 (en) | 2013-08-16 | 2021-07-13 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63307724A (en) * | 1987-06-09 | 1988-12-15 | Nec Corp | Manufacture of semiconductor integrated circuit |
-
1988
- 1988-03-04 JP JP63050961A patent/JPH01225117A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63307724A (en) * | 1987-06-09 | 1988-12-15 | Nec Corp | Manufacture of semiconductor integrated circuit |
Cited By (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0857354A1 (en) * | 1995-08-14 | 1998-08-12 | Advanced Material Engineering Research | A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility |
| EP0857354A4 (en) * | 1995-08-14 | 1999-12-22 | Advanced Materials Eng | A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility |
| US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| US8410459B2 (en) | 2002-06-26 | 2013-04-02 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| EP1579481A2 (en) * | 2002-06-26 | 2005-09-28 | Semequip, Inc. | An ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| JP2005531156A (en) * | 2002-06-26 | 2005-10-13 | セムエキップ インコーポレイテッド | Manufacturing method of CMOS device by implantation of N and P type cluster ions and anions |
| JP2005531158A (en) * | 2002-06-26 | 2005-10-13 | セムエキップ インコーポレイテッド | Semiconductor device and semiconductor device manufacturing method |
| US8618514B2 (en) | 2002-06-26 | 2013-12-31 | Semequip, Inc. | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| US7723233B2 (en) | 2002-06-26 | 2010-05-25 | Semequip, Inc. | Semiconductor device and method of fabricating a semiconductor device |
| EP1579481B1 (en) * | 2002-06-26 | 2013-12-04 | Semequip, Inc. | A method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
| JP2010161397A (en) * | 2002-06-26 | 2010-07-22 | Semequip Inc | Semiconductor device and method of fabricating semiconductor device |
| US8236675B2 (en) | 2002-06-26 | 2012-08-07 | Semequip, Inc. | Semiconductor device and method of fabricating a semiconductor device |
| JP2010161072A (en) * | 2003-12-12 | 2010-07-22 | Semequip Inc | Control of flow of vapor sublimated from solid |
| JP2007521398A (en) * | 2003-12-12 | 2007-08-02 | セメクイップ， インコーポレイテッド | Control of vapor flow sublimated from solids |
| WO2007027798A3 (en) * | 2005-08-30 | 2007-05-03 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US7943204B2 (en) | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US8389068B2 (en) | 2005-08-30 | 2013-03-05 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US9455147B2 (en) | 2005-08-30 | 2016-09-27 | Entegris, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| US10497569B2 (en) | 2009-07-23 | 2019-12-03 | Entegris, Inc. | Carbon materials for carbon implantation |
| US8138071B2 (en) | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8062965B2 (en) | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US9685304B2 (en) | 2009-10-27 | 2017-06-20 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US9142387B2 (en) | 2009-10-27 | 2015-09-22 | Entegris, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US9754786B2 (en) | 2010-02-26 | 2017-09-05 | Entegris, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US9171725B2 (en) | 2010-02-26 | 2015-10-27 | Entegris, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9012874B2 (en) | 2010-02-26 | 2015-04-21 | Entegris, Inc. | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9205392B2 (en) | 2010-08-30 | 2015-12-08 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
| US9764298B2 (en) | 2010-08-30 | 2017-09-19 | Entegris, Inc. | Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates |
| US9938156B2 (en) | 2011-10-10 | 2018-04-10 | Entegris, Inc. | B2F4 manufacturing process |
| US9960042B2 (en) | 2012-02-14 | 2018-05-01 | Entegris Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| US10354877B2 (en) | 2012-02-14 | 2019-07-16 | Entegris, Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| JP2013235992A (en) * | 2012-05-10 | 2013-11-21 | Ulvac Japan Ltd | Ion implantation method |
| US11062906B2 (en) | 2013-08-16 | 2021-07-13 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH01225117A (en) | Method and device for manufacturing semiconductor device | |
| US6138606A (en) | Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility | |
| KR100204856B1 (en) | Method for producing shallow junction in surface region of semiconductor substrate and apparatus therfor | |
| US20060292762A1 (en) | Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiation | |
| JP2014160856A (en) | System and method for manufacturing semiconductor device by implantation of carbon cluster | |
| TW200423185A (en) | Method of introducing impurity | |
| KR960005768A (en) | Method for manufacturing circuit in semiconductor substrate, embedding insulator layer forming method and insulator layer forming apparatus in silicon substrate | |
| JP4416357B2 (en) | Method for forming ultra-shallow junction | |
| JPH1187257A (en) | Heat treatment of silicon carbide substrate | |
| JPS62130522A (en) | Manufacture of semiconductor device | |
| US7105427B1 (en) | Method for shallow dopant distribution | |
| US5256162A (en) | Apparatus for forming shallow electrical junctions | |
| US20020187614A1 (en) | Methods for forming ultrashallow junctions with low sheet resistance | |
| US7622372B1 (en) | Method for shallow dopant distribution | |
| US5851906A (en) | Impurity doping method | |
| US5874352A (en) | Method of producing MIS transistors having a gate electrode of matched conductivity type | |
| JP2006221941A (en) | Ion implantation device and ion implantation method | |
| JPH05251378A (en) | Manufacture of semiconductor device | |
| JP2679011B2 (en) | Method of introducing impurity atoms | |
| JP2855903B2 (en) | Method for manufacturing semiconductor device | |
| KR100190311B1 (en) | Apparatus and method of manufacturing semiconductor element | |
| JP4086334B2 (en) | Impurity introduction method | |
| JPH01502065A (en) | Low-temperature method for forming gate insulator layers for semiconductor devices | |
| US5965932A (en) | Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron | |
| JP2522217B2 (en) | Method for suppressing silicon crystal defects caused by ion implantation |