JPH01221750A - Pattern forming or correcting method - Google Patents

Abstract

PURPOSE:To improve the working property and mass productivity of pattern formation by removing a resist film after forming a plated layer in space parts in the resist film by plating a base plate having the space parts in the resist film. CONSTITUTION:A resist film 4 is formed on a substrate 3 provided with part 1a at which a pattern is formed or corrected by applying the resist. Then a space part 5a is formed by removing the resist film 4 of the part 1a where the pattern is formed or corrected by selectively exposing the resist film 4. Then the resist film 4 is removed by forming a plated layer 6a in the space part 5a by plating. When such plating method is adopted, a resist pattern can be formed or corrected in a short time and, therefore, the working property and mass productivity of the pattern formation are improved.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a pattern forming or modifying method.

The method of the present invention is not only applicable to the formation of light-shielding metal film patterns in photomasks used in the manufacture of ICs and LSIs, and the formation of transparent conductive film patterns in color filters used in color LCDs, but also to the above-mentioned light-shielding It is also used to correct pattern defects that may occur during the formation of transparent metal film patterns and transparent conductive film patterns, and is particularly suitable for use in correcting the latter pattern defects.

[Prior Art] As mentioned above, the method of the present invention is particularly suitable for repairing pattern defective portions, and therefore, as the closest prior art, it is suitable for repairing pinholes and disconnections in chrome patterns in photomasks. This method includes the following steps (1) to (4).
).

(1) First, a positive photoresist is applied on a photomask having a white defect in a part of a chrome pattern to form a resist film.

(2) After spot exposing a portion of the resist film corresponding to the white defect portion, development is performed to form a window in the portion corresponding to the white defect portion.

(3) A vapor deposition layer or a sputtering layer made of chromium or other light-shielding metal is deposited on the white defect portion using a vapor deposition or sputtering method.

(4) The resist film is dissolved and removed, and at the same time, the vapor deposition layer or sputtering layer deposited on the resist crotch is also peeled off and removed to obtain a photomask in which white defect portions have been corrected.

[Problems to be Solved by the Invention] However, the above conventional pattern correction method has the following drawbacks.

(a) In the step (3), vapor deposition or sputtering means are used, but according to these methods, it takes a long time (for example, about 1 hour) to form the vapor deposited layer or the sputtered layer, and the number of sheets to be processed naturally increases. Restrictions arise and patterns cannot be formed or modified efficiently in a short period of time.

(jl) Vapor deposition equipment and sputtering equipment are expensive,
Equipment costs increase, which leads to increased product costs.

The present invention has been made to eliminate these problems and drawbacks, and its purpose is to form or modify a new resist pattern that can efficiently form or modify a resist pattern by simple means. The purpose is to provide a corrective method.

[Means for Solving the Problems] The present invention has been made to achieve the above object, and the pattern forming or modifying method of the present invention includes applying a resist onto a substrate having a portion where a pattern is to be formed or modified. a first step of coating to form a resist film; a second step of selectively exposing the resist film to remove portions of the resist film where a pattern is to be formed or modified to form voids; and a plating process. a third step of forming a plating layer in the void portion;
and a fourth step of peeling off the resist film.

Note that the term "substrate" includes an insulating substrate, a conductive substrate, and an insulating substrate with a conductive film adhered to the surface on which a resist film is to be formed.

[Function] The method of the present invention includes plating the substrate having a void in the resist film obtained through the first and second steps in the third step to form a plated layer in the void. In the fourth step, the resist film is removed to form or modify the resist pattern, but as will be clear from the examples below, the formation of the plating layer by plating can be accomplished by conventional vapor deposition or sputtering methods. It is performed in a much shorter time than the formation of a deposited layer, so it is superior in workability and mass production.

[Example] Embodiments of the present invention will be described below with reference to the drawings.

Example 1 As shown in FIG. 1 (1), a white defect portion 1a, which is a pinhole, is formed on a photomask in which a chromium pattern 2a with a thickness of 1000 is formed on a transparent glass substrate 3 made of aluminoborosilicate. Now that it's approved, fix it using the method below.

[First Step for Forming a Resist Film] First, a positive photoresist (AZ-1350 manufactured by Hoechst Co., Ltd.) is applied at a density of 10,000 on the surface of the photomask using a spin code method so as to cover the chromium pattern 2a and the white defect portion 1a. After applying the resist to a thickness equal to that of the average thickness, it is baked at 90° C. for 30 minutes to form a resist film 4 (see FIG. 1 (2)).

[Second step for forming voids] Next, only the portion of the resist film 4 corresponding to the white defect portion 1a is spot exposed, and then developed with a predetermined developer (e.g. AZ exclusive developer). A window (void) 5a corresponding to the white defect portion 1a is to be formed in the resist film 4 (see FIG. 1(3)).

[Third Step for Plating Treatment] Next, the photomask having the window 5a in the resist film 4 was subjected to pretreatment for electroless nickel plating by the following method. That is, 5nCj! 220g and 35% HCj! A photomask having a window 5, which had been previously washed with water, was immersed in a solution obtained by dissolving 10 ml of water in 11 water (liquid temperature: equivalent to room temperature) for 3 minutes to perform sensitivity treatment, and then lightly washed with water. PdCl20.4g and 35%H
A solution obtained by dissolving C110ml in 11 water (liquid temperature: 3
5° C.) for 3 minutes for activation treatment.

Next, the pretreated photomask was subjected to electroless nickel plating treatment by the following method. That is, nickel chloride 30f, sodium citrate 80g, sodium hypophosphite 2Of and ammonium chloride 50g were dissolved in water of 11, and the plating solution obtained by adjusting the pl+ to 8 to 9 with aqueous ammonia was pretreated. 1 to 2 drops are dropped into the window 5a of the photomask, and the substrate 3 is heated at 70 to 80°C to form a nickel plating layer 6a on the white defect portion 1a on the substrate 3, thereby removing the defect. Repair the part. The film thickness of the nickel plating If) 6a was set to 2000 to obtain a light shielding rate equivalent to that of the chromium pattern 2.

At this time, a nickel plating layer 6 is also formed on the resist film 4.
b was formed, and a plating layer was further formed on the resist film 4 on the side surface of the window 5a.

[Fourth Step for Peeling the Resist Film] Next, the photomask after the plating process was immersed in methyl cell solve acetate and ultrasonically cleaned for 5 minutes to remove the nickel plating layer 6b and the nickel plating layer 6b deposited thereon together with the resist film 4. After peeling off the nickel plating layer deposited on the sides and washing with water,
By baking at a temperature of 250° C. in an oven to increase the adhesion strength of the nickel plating layer 6a to the glass substrate 3, the white defect portion 1a in the chrome pattern 2a is removed.
A photomask was obtained in which the structure was modified by the nickel plating layer 6a. The OD (optical density) of the nickel plating layer 6a was 3.5 and had light blocking properties.

Example 2 Made of indium tin oxide (hereinafter referred to as lTO), the final color filter product is made of indium tin oxide (hereinafter referred to as lTO).
The first layer has three red colored layers formed regularly.
A defect (disconnection) was found in a part of the lead pattern of the substrate having the second and third pixel pattern groups and a lead pattern also made of ITo, which provides electrical continuity between the patterns in each pixel pattern group. I fixed this as follows.

[First Step for Forming a Resist Film] FIG. 2 (1) shows a partial cross-sectional view of a substrate with an I'T'O pattern, and 10 in the figure shows a defect (disconnection) in the lead pattern.
2c is a pixel pattern, and 3 is a glass substrate made of aluminoborosilicate.

Substrate 3 having defective portion 1c shown in FIG. 2(1)
First, a resist film 4 was formed by applying the same positive photoresist as used in Example 1 so that the pixel pattern 2c with a film thickness of 1,700 people was completely covered (see FIG. 2 (2)). ).

[Second step for forming void portion] Next, in the same manner as in Example 1, only the portion of the resist film 4 corresponding to the defective portion IC was exposed, and then developed.
Window (do not form a void >5c (see Figure 2 (3)).

[Third step for plating treatment] Next, the substrate 3 having the window 5c in the resist film 4 was subjected to pretreatment for plating treatment and subsequent plating treatment in the same manner as in Example 1. , defective portion] By forming a nickel plating layer 6C on the portion corresponding to defective portion C, the defective portion is not repaired (see FIG. 2 (4)). The thickness of this nickel plating layer 6C was the same as the thickness of the chrome pattern 2c].

[Fourth step for peeling off the resist film] Next, the substrate 3 having the nickel plating layer 6c after the plating treatment is immersed in methylcellosolve acetate in the same manner as in Example 1 to remove the resist film 4 thereon. The nickel plating layer 6d was removed together with the nickel plating layer 6d to obtain an ITO patterned substrate in which the defective portion 1c was corrected by the nickel plating layer 6c.

The obtained modified ITO patterned substrate was sequentially immersed in a melamine resin electrodeposition bath containing blue, green, and red pigments, respectively, and subjected to polymer electrodeposition treatment. Blue, green, and red colored layers could be formed in the second and third pixel patterns, respectively, and a good color filter for LCD could be obtained.

The present invention has been explained above using Examples 1 and 2.
The present invention is not limited to these examples, but includes the following modifications and applications.

(1) In Examples 1 and 2, the method of the present invention was used to modify a pattern, but the method of the present invention can also be used to form a pattern. In this case, the pattern is modified after forming a resist film. After removing the resist film in the part to be formed and forming a void corresponding to the desired pattern shape, plating is performed to form a plating layer in the void, and then the resist film is peeled off to form the desired pattern. Plating patterns can be obtained.

(2) Although aluminoborosilicate glass was used in Examples 1 and 2 as a substrate having a portion where a pattern should be formed or modified, other glass materials may be used, such as aluminosilicate glass, borosilicate glass, and soda lime. (glass, quartz glass, etc.), sapphire, silicon,
Ceramics or the like may also be used. Furthermore, although a transparent glass substrate was used as the substrate in Examples 1 and 2, the substrate does not have to be transparent, and a translucent or opaque substrate may be used depending on the case.

(3) In Examples 1 and 2, a positive photoresist was used as the photoresist used to form the resist film, but the present invention is not limited to this. A type electron beam resist may also be used. Note that when an electron beam resist is used, an electron beam exposure method may be employed. In addition, when a negative resist film is used, the windows 5a of Examples 1 and 2,
Portions of the resist film other than those where 5c is formed are exposed.

As the resist coating method, in addition to the spin code method, a spray coating method, a roll coating method, etc. may be employed.

(4) Example] and 2, the nickel plating layer was formed by electroless plating, but the metals that can be electrolessly plated are not limited to nickel, and include chromium, silver, gold, and copper. Examples include pure metals, alloys of combinations thereof, and alloys such as iron-nickel alloys. Further, an electroplating method can be used instead of the electroless plating method, and examples of metals that can be electroplated include nickel, chromium, silver, gold, platinum, copper, and the alloys mentioned above.

The type of metal to be plated is appropriately selected depending on the type of pattern to be formed or modified.

Particularly when repairing a pattern that has a defective part, it is preferable that the plating layer formed on the defective part be made of the same material as the pattern; however, if it has similar properties such as light shielding properties and conductivity, Different materials can also be used.

In addition, the thickness of the plating layer formed when modifying a pattern is usually the same as the thickness of the pattern, but in order to obtain the same light shielding rate as the pattern, it may be made thicker or thinner than the thickness of the pattern.4. You can also do it.

Further, in Examples 1 and 2, the plating solution was dropped into the windows 5a and 5c, but the surface of the substrate that is not to be plated may be masked by covering it with tape or bond, and then immersed in the plating bath.

In addition, in the case of electroless plating, it is necessary to perform pretreatment using S n C, e 2 or PdCl 2 described in Examples 1 and 2, but in the case of electroplating, such treatment is not necessary. .

(5) In Examples 1 and 2, methylcellosolve acetate was used to remove the resist film, but an aqueous alkaline solution such as NaOH or an organic solvent such as isopropyl alcohol or acetone may also be used.

[Effects of the Invention] As described in detail above, the method of the present invention employs a simple means of plating and can form or modify a resist pattern in a short time, so it has extremely great industrial significance.

[Brief explanation of the drawing]

FIG. 1 and FIG. 2 are process diagrams for explaining the present invention in detail. 1a... White defective portion 1b... Lead pattern defective portion 2a... Chrome pattern 2C... Pixel pattern 3... Substrate 4... Resist film 5a, 5c... Window

Claims (1)

[Claims] 1. A first step of forming a resist film by applying a resist onto a substrate having a portion where a pattern is to be formed or modified, and selectively exposing the resist film to resist the portion where a pattern is to be formed or modified. a second step of removing the film to form a void, a third step of plating to form a plating layer in the void, and a fourth step of peeling off the resist film.
A pattern forming or modifying method characterized by comprising the steps of: