JPH01218015A - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus

Info

Publication number
JPH01218015A
JPH01218015A JP4545888A JP4545888A JPH01218015A JP H01218015 A JPH01218015 A JP H01218015A JP 4545888 A JP4545888 A JP 4545888A JP 4545888 A JP4545888 A JP 4545888A JP H01218015 A JPH01218015 A JP H01218015A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor substrate
opening
semiconductor
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4545888A
Other languages
Japanese (ja)
Inventor
Hiroyuki Sugiuchi
博之 杉内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP4545888A priority Critical patent/JPH01218015A/en
Publication of JPH01218015A publication Critical patent/JPH01218015A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the amount of dust particles or the like adhering to a semiconductor substrate by a method wherein an opening is formed in a substrate retention part and a peripheral edge part of the semiconductor substrate is supported by a support part installed at a peripheral part of the opening in order to reduce a contact area between the semiconductor substrate and the substrate retention part. CONSTITUTION:An opening 3 whose diameter is smaller than the diameter of a semiconductor substrate 2 is formed at the top surface of a substrate retention part 1. A peripheral edge part on the rear side of the substrate 2 is supported by a support part 4 installed at a peripheral part of the opening 3. While a gas whose temperature has been adjusted by a temperature regulator 8 is circulated on the surface of the rear of the substrate 2 by using a pump 7, the substrate is heat-treated. Then, the substrate 2 comes into contact with the retention part 1 only at its peripheral edge part which does not affect a device region. By this setup, the amount of dust particles or the like adhering to the rear side of the substrate 2 can be reduced.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体基板を保持して熱処理を行うための半導
体製造装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus for holding a semiconductor substrate and performing heat treatment on the semiconductor substrate.

[従来の技術] 一般に、半導体装置の製造工程では、例えば、不純物を
拡散させるために半導体基板を加熱する所謂熱処理が行
われている。
[Prior Art] Generally, in the manufacturing process of a semiconductor device, a so-called heat treatment is performed to heat a semiconductor substrate in order to diffuse impurities, for example.

従来、このような熱処理工程には第2図に示すような装
置が用いられている。同図において、11は基板保持部
である。この基板保持部11には上面に平坦面11aが
形成されており、この平坦面11a上に半導体基板12
を載置すると共に、平坦面11aの周部に突設した落下
防止壁11bにより半導体基板12の落下を防止するよ
うになっている。また、載置した半導体基板12の加熱
は、基板保持部11の内部に設けた加熱コイル13・に
より基板保持部11を介して半導体基板12−の裏面側
から行うようになっている。
Conventionally, an apparatus as shown in FIG. 2 has been used for such a heat treatment process. In the figure, 11 is a substrate holding section. A flat surface 11a is formed on the upper surface of this substrate holding portion 11, and a semiconductor substrate 12 is placed on this flat surface 11a.
At the same time, the semiconductor substrate 12 is prevented from falling by a fall prevention wall 11b protruding from the periphery of the flat surface 11a. Further, the mounted semiconductor substrate 12 is heated from the back side of the semiconductor substrate 12- through the substrate holder 11 by a heating coil 13 provided inside the substrate holder 11.

[発明が解決しようとする課題] しかしながら、この従来装置は基板保持部11の平坦部
11aに半導体基板12を載置させる構造であり、従っ
て、半導体基板12はその裏面側が平坦面11aに完全
に密着した状態となっていた。このため、半導体基板1
2の裏面には平坦面11a上のほこり等が熱処理中に無
数に付着してしまい、これらのほこり等が半導体基板1
2の運搬時又は液中での処理時に半導体基板表面に再付
着してしまうことがある。この再付着が製品の歩留り低
下の大きな要因となっていた。
[Problems to be Solved by the Invention] However, this conventional device has a structure in which the semiconductor substrate 12 is placed on the flat part 11a of the substrate holding part 11, so that the back side of the semiconductor substrate 12 is completely placed on the flat surface 11a. They were in close contact. For this reason, the semiconductor substrate 1
During the heat treatment, countless pieces of dust, etc. on the flat surface 11a adhere to the back surface of the semiconductor substrate 1.
2 may re-adhere to the surface of the semiconductor substrate during transportation or processing in a liquid. This re-adhesion was a major factor in reducing product yield.

本発明はかかる問題点に鑑みてなされたものであって、
熱処理工程中に基板保持部側から半導体基板側に付着す
るほこり等の量を低減することができ、製品の歩留り向
上を図ることができる半導体製造装置を提供することを
目的とする。
The present invention has been made in view of such problems, and includes:
An object of the present invention is to provide a semiconductor manufacturing apparatus that can reduce the amount of dust and the like that adheres to a semiconductor substrate from a substrate holding part during a heat treatment process, and can improve product yield.

[課題を解決するための手段] 本発明に係る半導体製造装置は、半導体基板を保持し、
該半導体基板に熱処理を施す半導体製造装置において、
開口を有し該開口の周部に設けた支持部により前記半導
体基板を保持する基板保持部と、前記開口に面する領域
を介して前記半導体基板を加熱する加熱手段とを備えた
ことを特徴とする。
[Means for Solving the Problems] A semiconductor manufacturing apparatus according to the present invention holds a semiconductor substrate,
In a semiconductor manufacturing apparatus that performs heat treatment on the semiconductor substrate,
A substrate holding part that has an opening and holds the semiconductor substrate by a support part provided around the opening, and a heating means that heats the semiconductor substrate through a region facing the opening. shall be.

[作用] 上記構成の本発明の半導体製造装置では、半導体基板は
その周縁部のみが基板保持部の支持部と接触し、従って
、半導体基板と基板保持部との接触面積が少なくなり、
そのため、基板保持部側から半導体基板側に付着するほ
こり等の量が低減される。
[Function] In the semiconductor manufacturing apparatus of the present invention having the above configuration, only the peripheral portion of the semiconductor substrate contacts the supporting portion of the substrate holding portion, and therefore, the contact area between the semiconductor substrate and the substrate holding portion is reduced.
Therefore, the amount of dust and the like that adheres from the substrate holder side to the semiconductor substrate side is reduced.

[実施例] 以下、添付の図面を参照して本発明の実施例について具
体的に説明する。
[Example] Hereinafter, an example of the present invention will be specifically described with reference to the accompanying drawings.

第1図は本発明の実施例に係る半導体製造装置の断面構
造を示すものである。図中、1は半導体基板2を水平に
吸着保持するための基板保持部である。この基板保持部
1には上面に半導体基板2の径より小さい径の開口3が
設けられており、この間口3の周部に設けた支持部4に
より半導体基板2の裏面側の周縁部を支持すると共に、
支持部4の周囲に突設した落下防止壁4aにより半導体
基板2の落下を防止するようになっている。また、支持
部4には真空吸着ポンプ(図示せず)に連通した吸着溝
5が設けられており、この吸着溝5を介して半導体基板
2を支持部4上に吸着保持するようになっている。
FIG. 1 shows a cross-sectional structure of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a substrate holder for holding the semiconductor substrate 2 horizontally by suction. This substrate holder 1 is provided with an opening 3 having a diameter smaller than the diameter of the semiconductor substrate 2 on the upper surface, and a supporting portion 4 provided around the periphery of this opening 3 supports the periphery of the back side of the semiconductor substrate 2. At the same time,
A fall prevention wall 4a protruding around the support portion 4 prevents the semiconductor substrate 2 from falling. Further, the support section 4 is provided with a suction groove 5 that communicates with a vacuum suction pump (not shown), and the semiconductor substrate 2 is suctioned and held on the support section 4 through the suction groove 5. There is.

基板保持部1の底部には気体排気口6及び気体供給口9
が設けである。これら気体排気口6と気体供給口9間に
は熱媒体としての気体を循環させるためのポンプ7及び
この気体の温度を適正温度に調節するための温度調節器
8が配管10により連結されている。
A gas exhaust port 6 and a gas supply port 9 are provided at the bottom of the substrate holder 1.
is the provision. A pump 7 for circulating gas as a heat medium and a temperature controller 8 for adjusting the temperature of this gas to an appropriate temperature are connected by piping 10 between the gas exhaust port 6 and the gas supply port 9. .

即ち、上記構成の半導体製造装置においては、半導体基
板2は、基板保持部1における開口3の周部に設けた支
持部4上に載置されると共に、吸着溝5を介して真空吸
着ポンプ(図示せず)により吸着保持される。そして、
この保持された半導体基板2の裏面側表面を温度調節器
8により温度調節された気体がポンプ7により循環され
ることにより熱処理が施されるものである。
That is, in the semiconductor manufacturing apparatus having the above configuration, the semiconductor substrate 2 is placed on the support part 4 provided around the opening 3 in the substrate holding part 1, and is also placed on the vacuum suction pump ( (not shown). and,
A heat treatment is performed on the rear surface of the held semiconductor substrate 2 by circulating a gas whose temperature is controlled by a temperature controller 8 by a pump 7.

このように本実施例の半導体製造装置では、開口3の周
部に設けた支持部4により半導体基板2の周縁部を支持
するようになっている。従って、半導体基板2が基板保
持部1と接触するのはその周縁部の素子領域に影響を与
えない部分のみとなり、従来の製造装置に比して接触面
積が大幅に低減される。このため半導体基板2の裏面側
に付着されるほこり等の量が著しく少なくなる。
In this manner, in the semiconductor manufacturing apparatus of this embodiment, the peripheral edge of the semiconductor substrate 2 is supported by the supporting portion 4 provided around the opening 3. Therefore, the semiconductor substrate 2 comes into contact with the substrate holder 1 only at the peripheral portion thereof that does not affect the element region, and the contact area is significantly reduced compared to conventional manufacturing equipment. Therefore, the amount of dust and the like attached to the back side of the semiconductor substrate 2 is significantly reduced.

なお、上記実施例においては、半導体基板2を加熱する
ために、基板保持部1の開口3内に気体を循環させるよ
うにしたが、本発明はこれに限定するものではなく気体
の代わりに液体を熱媒体として使用してもよいことは勿
論である。更に、加熱手段としては、その他の加熱コイ
ル等によるものであってもよい。
In the above embodiment, gas was circulated within the opening 3 of the substrate holder 1 in order to heat the semiconductor substrate 2, but the present invention is not limited to this, and liquid may be used instead of gas. Of course, you may use it as a heat medium. Further, the heating means may be other heating coils or the like.

[発明の効果] 以上のように本発明の半導体製造装置によれば、基板保
持部に開口を設け、該開口の周部に設けた支持部により
半導体基板の周縁部を支持するようにしたので、半導体
基板の基板保持部との接触面積が大幅に少なくなり、こ
れにより基板保持部から半導体基板側に付着するほこり
等の量が大幅に低減されると共に基板表面側に再付着さ
れるほこり等の量が大幅に低減され、製品の歩留りが著
しく向上する。
[Effects of the Invention] As described above, according to the semiconductor manufacturing apparatus of the present invention, the opening is provided in the substrate holder, and the peripheral edge of the semiconductor substrate is supported by the supporting portion provided around the opening. , the contact area of the semiconductor substrate with the substrate holder is significantly reduced, which greatly reduces the amount of dust, etc. that adheres to the semiconductor substrate side from the substrate holder, and also reduces the amount of dust, etc. that re-adheres to the substrate surface side. amount is significantly reduced, and product yield is significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例に係る半導体製造装置の断面図
、第2図は従来の半導体製造装置を示す断面図である。 1.11.基板保持部、2,12.半導体基板、3;開
口、4;支持部、5;吸着溝、6;気体排気口、7;ポ
ンプ、8;温度調節器、9;気体供給口、10;配管、
11a:平坦部、13;加熱コイル
FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor manufacturing apparatus. 1.11. Substrate holding part, 2, 12. Semiconductor substrate, 3; opening, 4; support portion, 5; adsorption groove, 6; gas exhaust port, 7; pump, 8; temperature controller, 9; gas supply port, 10; piping,
11a: flat part, 13; heating coil

Claims (1)

【特許請求の範囲】[Claims] (1)半導体基板を保持し、該半導体基板に熱処理を施
す半導体製造装置において、開口を有し該開口の周部に
設けた支持部により前記半導体基板を保持する基板保持
部と、前記開口に面する領域を介して前記半導体基板を
加熱する加熱手段とを備えたことを特徴とする半導体製
造装置。
(1) In a semiconductor manufacturing apparatus that holds a semiconductor substrate and performs heat treatment on the semiconductor substrate, a substrate holding section that has an opening and holds the semiconductor substrate by a support section provided around the opening; A semiconductor manufacturing apparatus comprising: heating means for heating the semiconductor substrate through a facing region.
JP4545888A 1988-02-26 1988-02-26 Semiconductor manufacturing apparatus Pending JPH01218015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4545888A JPH01218015A (en) 1988-02-26 1988-02-26 Semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4545888A JPH01218015A (en) 1988-02-26 1988-02-26 Semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPH01218015A true JPH01218015A (en) 1989-08-31

Family

ID=12719914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4545888A Pending JPH01218015A (en) 1988-02-26 1988-02-26 Semiconductor manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPH01218015A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015095599A (en) * 2013-11-13 2015-05-18 シャープ株式会社 Compound semiconductor thin film growth apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015095599A (en) * 2013-11-13 2015-05-18 シャープ株式会社 Compound semiconductor thin film growth apparatus

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