JPH01216290A - Semiconductor radiation position detector and its manufacture - Google Patents
Semiconductor radiation position detector and its manufactureInfo
- Publication number
- JPH01216290A JPH01216290A JP63042831A JP4283188A JPH01216290A JP H01216290 A JPH01216290 A JP H01216290A JP 63042831 A JP63042831 A JP 63042831A JP 4283188 A JP4283188 A JP 4283188A JP H01216290 A JPH01216290 A JP H01216290A
- Authority
- JP
- Japan
- Prior art keywords
- signal processing
- radiation
- signal extraction
- processing circuit
- detection element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 238000000605 extraction Methods 0.000 claims description 43
- 238000001514 detection method Methods 0.000 claims description 35
- 239000004020 conductor Substances 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052759 nickel Inorganic materials 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野）
本発明は、例えばＸ線撮影装置およびガンマカメラ等、
二次元放射線画像を得るための装置に利用することがで
きる、半導体を検出素子として用いた放射線位置検出器
とその製造方法に関する。[Detailed Description of the Invention] <Industrial Application Fields> The present invention is applicable to, for example, X-ray imaging devices, gamma cameras, etc.
The present invention relates to a radiation position detector using a semiconductor as a detection element, which can be used in a device for obtaining two-dimensional radiation images, and a method for manufacturing the same.
〈従来の技術〉
ＣｄＴｅやＨｇ１ｚ等の化合物半導体を用いた放射線検
出素子を利用して二次元放射線画像を得る方法としては
、従来、複数の放射線検出素子を基板上に一次元方向に
配列して一次元検出素子アレイを形成し、この検出素子
アレイを所定の方向に走査して放射線の二次元画像を得
る方法（特願昭５７−２１０７６１．特願昭５７−２０
４０５３）や、例えば第１０図の斜視図に示すように、
化合物半導体１の片面にたんざく状の複数の電極１０２
ａ。<Prior art> Conventionally, a method of obtaining a two-dimensional radiation image using a radiation detection element using a compound semiconductor such as CdTe or Hg1z involves arranging a plurality of radiation detection elements in a one-dimensional direction on a substrate. A method of forming a one-dimensional detection element array and scanning this detection element array in a predetermined direction to obtain a two-dimensional image of radiation (Japanese Patent Application No. 57-210761.
4053) or, for example, as shown in the perspective view of FIG.
A plurality of tanzak-shaped electrodes 102 are provided on one side of the compound semiconductor 1.
a.
１０２ｂ、・・・を互いに平行に設け、その裏面にはこ
れと直交して同じく複数の電極１０３ａ、１０３ｂ。102b, . . . are provided in parallel to each other, and on the back surface thereof, a plurality of electrodes 103a, 103b are provided perpendicularly thereto.
・・・を設けて二次元検出素子アレイＤ１゜を形成し、
放射線の入射により、電極１０２ａ、１０２ｂ。... to form a two-dimensional detection element array D1°,
Due to the incidence of radiation, the electrodes 102a, 102b.
・・・が出力するＸ方向の位置情報および電極１０３ａ
。The positional information in the X direction and the electrode 103a outputted by...
.
１０３ｂ、・・・が出力するＸ方向の位置情報から放射
線の二次元画像を得る方法（Ｎｕｃｌｅａｒ Ｉｎｓｔ
ｒｕｍｅｎｔａｎｄＭｅｔｈｏｄ、２１３ （１９８３
）９５）が採られている。103b, . . . A method for obtaining a two-dimensional radiation image from the X-direction position information outputted by Nuclear Inst.
rumentandMethod, 213 (1983
)95) has been adopted.
（発明が解決しようとする課題〉
ところで、前者の方法によれば、−次元検出素子アレイ
を走査するための機構が必要で、撮像装置が複雑、かつ
、大損りなものになり、しかも、−次元検出素子アレイ
を走査する毎に放射線の計数時間が必要になるため、撮
影領域全体の二次元画像を得るのに多くの時間を要する
という欠点がある。(Problems to be Solved by the Invention) However, according to the former method, a mechanism for scanning the -dimensional detection element array is required, which makes the imaging device complicated and a major loss. Since radiation counting time is required each time the detection element array is scanned, there is a drawback that it takes a long time to obtain a two-dimensional image of the entire imaging area.
また、後者の方法によれば、二次元検出素子アレイＤ１
゜に同時に二つの放射線が入射したときには、その入射
位置を検出することは不可能で、従って線量率が極めて
低い放射線の二次元画像を得る場合にしか適用できない
という欠点がある。Moreover, according to the latter method, the two-dimensional detection element array D1
When two radiations are incident at the same time, it is impossible to detect the position of incidence, and therefore this method has the disadvantage that it can only be applied to obtain two-dimensional images of radiation with an extremely low dose rate.
そこで、上述の二つの方法の欠点を解決するために、半
導体の一面に共通電極を設け、その反対側の面には行列
状に複数の信号取り出し電極を設けて二次検出素子アレ
イを形成し、各信号取り出し電極の信号を並列処理する
ことにより、放射線の入射位置情報を得る方法が考えら
れつつあるが、この方法によれば、各信号取り出し電極
それぞれに、アンプ、コンパレータおよびカウンタ等か
らなる信号処理回路を１個づつ接続する必要があり、そ
の接続が、次に説明する理由により、きわめて困難で、
この点が製品化を推し進めるに当り大きな障害となって
いた。Therefore, in order to solve the drawbacks of the above two methods, a common electrode is provided on one side of the semiconductor, and a plurality of signal extraction electrodes are provided in a matrix on the opposite side to form a secondary detection element array. A method is being considered to obtain radiation incident position information by processing the signals of each signal extraction electrode in parallel, but according to this method, each signal extraction electrode consists of an amplifier, a comparator, a counter, etc. It is necessary to connect the signal processing circuits one by one, which is extremely difficult for the reasons explained below.
This point was a major obstacle in promoting commercialization.
−ａに、放射線検出素子の信号取り出し電極は信号処理
回路にワイヤにより接続されている場合が多く、例えば
−次元検出素子アレイの場合、第１１図の部分断面図に
示すように、基板１１４上に信号処理回路（図示せず）
に導通する複数の導体パターン１１６１を形成しておき
、検出素子ＤＩ＋の各信号取り出し電極１１２１それぞ
れをワイヤリングにより該当する各導体パターン１１６
１に接続する方法が採られている。ところが、この方法
を複数の信号取り出し電極を行列状に設けた二次元検出
素子アレイに適用すると、信号取り出し電極が行列状に
設けられているため、個々のワイヤが交錯し合いワイヤ
間で短絡が生じる虞れがあり、しかも、信号取り出し電
極全てのワイヤリングを行うには、きわめて多（時間が
必要になり、従って、二次元検出素子アレイに一次元検
出素子アレイと同様なワイヤリングを施すことは実質的
に不可能である。ここで、例えば第１２図の部分断面図
に示すように、基板１２４上に各信号取り出し電極１１
２．、に対応する位置関係で各導体パターン１１ＬＪを
形成しておけば、個々のワイヤが交錯することなくワイ
ヤリングを施こすことは可能ではあるが、このようなワ
イヤリングは特殊であり、現状のワイヤリング装置では
施工することが非常に難しく、しかも、検出素子アレイ
Ｄ１□を基板１２４に固着する工程も必要なことから、
製造工程が複雑になり、製品コストがきわめて高いもの
になるという新らたな問題が生じる。-a, the signal extraction electrode of the radiation detection element is often connected to the signal processing circuit by a wire. For example, in the case of a -dimensional detection element array, as shown in the partial cross-sectional view of FIG. signal processing circuit (not shown)
A plurality of conductor patterns 1161 are formed in advance and each signal extraction electrode 1121 of the detection element DI+ is connected to each corresponding conductor pattern 116 by wiring.
1 is used. However, when this method is applied to a two-dimensional detection element array in which multiple signal extraction electrodes are arranged in rows and columns, the individual wires intersect with each other and short circuits occur between the wires. Moreover, wiring all the signal extraction electrodes requires an extremely large amount of time (and therefore, it is practically impossible to wire a two-dimensional detection element array in the same way as a one-dimensional detection element array. For example, as shown in the partial cross-sectional view of FIG.
2. If each conductor pattern 11LJ is formed in a positional relationship corresponding to This method is very difficult to construct, and also requires a step of fixing the detection element array D1□ to the substrate 124.
New problems arise in that the manufacturing process becomes complex and the product cost becomes extremely high.
本発明の第１の目的は、例えば放射線撮影装置に利用し
た際に、二次元放射線画像に関する情報を短時間で出力
することができ、しかも、線量率が高い放射線の検出も
可能な半導体放射線位置検出器を提供することにあり、
また、第２の目的は、製品の信顛性の向上、および、製
品コストの低減を図ることのできる、半導体放射線位置
検出器の製造方法を提供することにある。A first object of the present invention is to provide a semiconductor radiation position that can output information regarding two-dimensional radiation images in a short time when used in a radiation imaging device, for example, and also can detect radiation with a high dose rate. Our goal is to provide a detector.
A second object of the present invention is to provide a method for manufacturing a semiconductor radiation position detector that can improve product reliability and reduce product cost.
８（課題を解決するための手段〉
上記の第１の目的を達成するための構成を、実施例に対
応する第２図、第３図、および第４図を参照しつつ説明
すると、本発明は、板状の化合物半導体１の一面に共通
電極２を設けるとともに、その反対側の面には、各画素
に対応させるべく行列状に複数個の信号取り出し電極３
゜＋３１２＋ ・・・３、ｊ、・・・を設けて放射線二
次元検出素子アレイＤ。8 (Means for Solving the Problems) The structure for achieving the above first object will be described with reference to FIGS. 2, 3, and 4 corresponding to the embodiments. A common electrode 2 is provided on one surface of a plate-shaped compound semiconductor 1, and a plurality of signal extraction electrodes 3 are arranged in a matrix on the opposite surface to correspond to each pixel.
゜+312+ . . 3, j, . . . are provided to form a two-dimensional radiation detection element array D.
を形成する。また、各信号取り出し電極３＝ｊには、そ
れぞれ１個の信号処理回路５ ａｊを接続する。form. Furthermore, one signal processing circuit 5aj is connected to each signal extraction electrode 3=j.
そして、各信号処理回路５．４の出力から放射線の二次
元入射位置情報を得るよう構成する。The configuration is such that two-dimensional incident position information of radiation is obtained from the output of each signal processing circuit 5.4.
また、上記の第２の目的を達成するための製造方法を、
実施例に対応する第２図および第３図を参照しつつ説明
すると、本発明は、各信号取り出し電極３ｉｊそれぞれ
に、その各電極３ ｘｊに導通するハンダバンプＳ ｉ
ｊを形成する。また、基板４上に、信号処理回路５ｉｊ
が複数個形成された回路素″！−５を配設するとともに
、基板４上には、各信号処理回路５ ＋４にそれぞれ個
別に導通する複数の導体パターン６□＋６＋ｔ＋ ・・
・６ ｉＪ＋ ・・・を、その各端部が各ハンダバンプ
Ｓｉｊの配置関係と対応するよう形成する。次に、各ハ
ンダバンプＳ！Ｊをそれぞれ該当する各導体パターン６
ｉｊの先端部に接触させた状態で、所定の温度で溶か
した後硬化させることにより、各信号取り出し電極３
ｉｊとその各電極３ ｉａに該当する導体パターン８
ｘＪとを電気的に接続しつつ、放射線二次元検出素子ア
レイＤ＋を基板４に固着することによって、特徴づけら
れる。In addition, a manufacturing method for achieving the above second objective,
Explaining with reference to FIGS. 2 and 3 corresponding to the embodiment, the present invention provides a solder bump Si connected to each signal extraction electrode 3ij and connected to each electrode 3
form j. Further, on the board 4, a signal processing circuit 5ij
A plurality of circuit elements ``!-5'' are formed on the substrate 4, and a plurality of conductor patterns 6□+6+t+ .
・6 iJ+ . . . is formed so that each end thereof corresponds to the arrangement relationship of each solder bump Sij. Next, each solder bump S! Each corresponding conductor pattern 6
Each signal extraction electrode 3 is melted at a predetermined temperature and then cured while in contact with the tip of the ij.
Conductor pattern 8 corresponding to ij and each electrode 3 ia
It is characterized by fixing the two-dimensional radiation detection element array D+ to the substrate 4 while electrically connecting it to xJ.
く作用）
本発明の構造を有する半導体放射線位置検出器によると
、各画素ごとの放射線入射位置情報をそれぞれ個別に、
かつ、同時に出力することができ、しかも、放射線二次
検出素子アレイＤ、に複数の放射線が同時に入射した場
合でも、その各入射位置つまり各・画素に対応する各信
号処理回路５ ｍｊが個別に動作して、それぞれの放射
線の入射位置情報を出力することができる。According to the semiconductor radiation position detector having the structure of the present invention, the radiation incident position information for each pixel is individually calculated.
Furthermore, even if multiple radiations are simultaneously incident on the radiation secondary detection element array D, each signal processing circuit 5mj corresponding to each incident position, that is, each pixel, can be output simultaneously. It can operate to output incident position information of each radiation.
また、本発明の製造方法によれば、全ての信号取り出し
電極３□＋ ３＋ｚ、・・・３，１・・・を、それぞ
れコ亥当する導体パターン６＋＋＋ ６ｔｚ＋ ・・
・１６ｉｊ＋ ・・・つまり信号処理回路５．、．５゜
、・・・＋５Ｌｊ＋ ・・・にハンダバンプＳ ｉｊに
より一度に接続することが可能になる。Further, according to the manufacturing method of the present invention, the conductor patterns 6+++ 6tz+ . . . respectively correspond to all the signal extraction electrodes 3□+ 3+z, .
・16ij+...In other words, signal processing circuit 5. ,． 5°, . . . +5Lj+ . . . can be connected at once by the solder bump S ij.
〈実施例） 本発明の実施例を、以下、図面に基づいて説明する。<Example) Embodiments of the present invention will be described below based on the drawings.
第１図は本発明実施例の全体斜視図、第２図はその長手
方向の縦断面図、第３図はそのＡ部詳細図、第４図は放
射線二次元素子アレイＤ、の斜視図、第５図は本発明実
施例の回路構成を示すブロック図である。FIG. 1 is an overall perspective view of an embodiment of the present invention, FIG. 2 is a longitudinal cross-sectional view thereof, FIG. 3 is a detailed view of part A thereof, and FIG. 4 is a perspective view of a secondary radiation element array D. FIG. 5 is a block diagram showing the circuit configuration of an embodiment of the present invention.
例えばＣｄＴｅやＨｇ１．等の結晶からなる化合物半導
体１の一面側には、Ａｕ等を一様に蒸着してなる共通電
極２が形成されている。For example, CdTe and Hg1. A common electrode 2 made of uniformly vapor-deposited Au or the like is formed on one side of a compound semiconductor 1 made of a crystal such as.
半導体１の反対側の面には、各画素に対応させるべ（、
行列状に複数個の信号取り出し電極３１１ ＋３．２．
・・・＋３１Ｊ＋ ・・・が形成されており、共通電極
２側を放射線入射側とする放射線二次元検出素子アレイ
Ｄ１を形成している。なお、各信号取り出し電極３五、
の大きさは、例えばＩＩＩＩＩ１１角〜０．２ｍｍ角程
度であり、また、隣接する信号取り出し電極Ｇ ｉｊ間
における隙間は例えば０．１ｍｍ〜０．０２１１１ａ１
程度である。On the opposite side of the semiconductor 1, there should be a pattern corresponding to each pixel (,
Plural signal extraction electrodes 311 arranged in a matrix +3.2.
...+31J+ ... are formed, forming a two-dimensional radiation detection element array D1 with the common electrode 2 side as the radiation incident side. In addition, each signal extraction electrode 35,
The size is, for example, about III11 square to 0.2 mm square, and the gap between adjacent signal extraction electrodes Gij is, for example, 0.1 mm to 0.02111 a1.
That's about it.
一方、セラミック等の基板４上には、回路素子５が搭載
されており、この回路素子５内には、信号取り出し電極
３□、３□、・・・＋３１ｊと同じ個数の信号処理回路
５＋＋、５゜、・・・＋５４ｊ＋ ・・・が−列に互い
に隣接して形成されている。この各信号処理回路５ ｉ
ｊは、その入力側から順次形成されたプリアンプ５ａ、
メインアンプ５ｂ、コンパレータ５ｃおよびカウンタ５
ｄによって構成されている。On the other hand, a circuit element 5 is mounted on a substrate 4 made of ceramic or the like, and within this circuit element 5, the same number of signal processing circuits 5++ as signal extraction electrodes 3□, 3□, . . . +31j, 5°, . . . +54j+ . . . are formed adjacent to each other in the − column. Each signal processing circuit 5 i
j is a preamplifier 5a formed sequentially from its input side;
Main amplifier 5b, comparator 5c and counter 5
It is composed of d.
また、基板４上には、各信号処理回路５ ｔ Ｊの入力
側にそれぞれ個別に導通する接続用薄体パターン６ ｉ
ａが、その各先端部の位置を信号取り出し電極３□、３
゜、・・・＋３４ｊ＋ ・・・の行列状の配置に対応さ
せるべく形成されている。さらに、基板４上には、各信
号処理回路５ ｉｊの出力側にそれぞれ個別に導通する
出力用導体パターン７ ｉｊが形成されている。Further, on the substrate 4, thin connection patterns 6i are individually connected to the input side of each signal processing circuit 5tJ.
a indicates the position of each tip of the signal extraction electrode 3□, 3
°, . . . +34j+ . . . Furthermore, output conductor patterns 7 ij are formed on the substrate 4 and individually conductive to the output side of each signal processing circuit 5 ij.
このように構成された基板４上に放射線二次元検出素子
アレイＤ、が搭載され、各信号取り出し電極３ｉＪは、
それ奢れ該当する接続用の導体パターン６ｉＪの先端部
に、ＡｕおよびＮｉメタル層８ ｉ ｊおよび９ ｉｊ
ｓならびにハンダバンプＳ ｉｊによって電気的に接続
される。A two-dimensional radiation detection element array D is mounted on the substrate 4 configured in this way, and each signal extraction electrode 3iJ is
Then, Au and Ni metal layers 8 ij and 9 ij are placed on the tip of the corresponding connection conductor pattern 6iJ.
s and electrically connected by solder bumps S ij.
次に、製造方法を第２図および第３図を参照しつつ説明
する。Next, the manufacturing method will be explained with reference to FIGS. 2 and 3.
まず、半導体１の一面側の各信号取り出し電極３ ｌ
Ｊ上に、それぞれＡｕおよびＮｉメタル層８ａｊおよび
９ ｉｊ、ならびにハンダバンプＳ ｉｊを後述する方
法で順次形成するとともに、各信号取り出し電極３１ｊ
をハンダ濡れ性の悪いフォトレジスト１０で覆っておく
。一方、基板４上に、信号取り出し電極３＋＋＋３１□
、・・・＋３ｉｊ＋ ・・・と同じ個数の信号処理回路
（図示せず）が形成された回路素子５を配設するととも
に、その基板４上には、各信号処理回路の入力側にそれ
ぞれ個別に導通する接続用導体パターン６４ｊを、その
各先端部が各信号取り出し電極Ｇ ｉｊ上に設けられた
各ハンダバンプＳ逼ｊに１対１に対応する形状になるよ
う形成し、又基板４上に各信号処理回路の出力側にそれ
ぞれ個別に導通する出力用導体パターン７ ｍｊを形成
する。First, each signal extraction electrode 3 l on one side of the semiconductor 1
Au and Ni metal layers 8aj and 9ij and solder bumps Sij are sequentially formed on J by the method described later, and each signal extraction electrode 31j
is covered with photoresist 10, which has poor solder wettability. On the other hand, on the substrate 4, a signal extraction electrode 3+++31□
, . A connecting conductor pattern 64j is formed so that each tip thereof corresponds one-to-one to each solder bump S connected on each signal extraction electrode Gij, and a Output conductor patterns 7 mj that are individually conductive are formed on the output side of each signal processing circuit.
そして、この基板４上に放射線二次元検出素子アレイＤ
、を、その各ハンダバンプＳ ｉｊがそれぞれ該当する
各接続用導体パターン６１、に接触するよう配設し、こ
の状態で、各ハンダバンプＳ ４４を例えば２００℃程
度で溶かした後硬化させることにより、各信号取り出し
電極３ ｉｊをそれぞれ該当する接続用導体パターン６
目に電気的に接続するとともに、放射線二次元検出素子
アレイ貼を基板４に固着して、第１図に示す半導体放射
線位置検出器を得る。ここで、各ＡｕおよびＮｉメタル
層８ ｉｊおよび９Ｂは各信号取り出し電極３ ｔｊと
各ハンダバンプＳ ｉｊとの接着強度を高めるとともに
、ハンダバンプＳｉ、が溶けた時にハンダが半導体１内
に流入しないようにするために設けられている。Then, on this substrate 4, a radiation two-dimensional detection element array D is provided.
, are arranged so that each solder bump S ij is in contact with each corresponding connection conductor pattern 61, and in this state, each solder bump S 44 is melted at, for example, about 200° C. and then hardened. Connecting conductor pattern 6 corresponding to signal extraction electrode 3 ij
The semiconductor radiation position detector shown in FIG. 1 is obtained by electrically connecting to the eye and fixing the two-dimensional radiation detection element array to the substrate 4. Here, each Au and Ni metal layer 8 ij and 9B increases the adhesive strength between each signal extraction electrode 3 tj and each solder bump S ij, and also prevents solder from flowing into the semiconductor 1 when the solder bump Si melts. It is set up for the purpose of
また、各信号取り出し電極３目はフォトレジスト１０に
よって覆われており、ハンダバンプＳ ｉｊが溶けた時
に、その一部がメタル層８ ａｊ＋ Ｌｊかららはみ
出しても互いに隣接する各信号取り出し電極３４．間で
短絡が生じることはない。Further, each signal extraction electrode 3 is covered with a photoresist 10, and even if a part of it protrudes from the metal layer 8aj+Lj when the solder bump Sij melts, each adjacent signal extraction electrode 34. No short circuit will occur between the two.
次いで、ＡｕおよびＮｉメタル層８ ｓｊおよび９直４
、ならびにハンダバンプＳ ｉｊの作製方法を、第６図
（ａ）乃至（ｄ）を参照しつつ説明する。Next, Au and Ni metal layers 8 sj and 9 straight 4
, and a method for manufacturing the solder bumps Sij will be explained with reference to FIGS. 6(a) to 6(d).
まず、半導体１の一面側にリフトオフ法によりＡｕを付
着して複数の信号取り出し電１３ｉｊを行列状に形成し
く図（ａ、））、さらに、各信号取り出し電極３ ｆｆ
１７の一部が露呈するようフォトレジスト１０を一様に
塗布した後、ＮｉおよびＡｕを順次蒸着してＮｉおよび
Ａｕ膜を形成する（図（ｂ））。First, Au is deposited on one side of the semiconductor 1 by a lift-off method to form a plurality of signal extraction electrodes 13ij in a matrix (Figure (a,)), and then each signal extraction electrode 3ff is formed.
After a photoresist 10 is uniformly applied so that a portion of the photoresist 17 is exposed, Ni and Au are sequentially deposited to form a Ni and Au film (FIG. (b)).
次にＡｕ膜表面上に、その各窪み部が露呈するようフォ
トレジスト（図示せず）を−様に塗布した後、その各窪
み部上にハンダバンプＳ ｉｊをＡｕおよびＮｉ層を電
流経路とする電界メツキによって形成しく図（Ｃ））、
そして、Ａｕ膜上のフォトレジストをはく離液で除去し
た後、ＡｕおよびＮｉ膜を各ハンダバンプＳｉｊをマス
クとしてエツチングし、さらに、各ハンダバンプＳ ｉ
ｊを例えば２００°Ｃで溶解した後硬化させることによ
って、各信号取り出し電極３ ｉ、上に、図（ｄ）に示
す形状のＡｕおよびＮｉメタル層８！ｊおよび９ Ｌａ
ｓならびにハンダバンプＳ ｉｊを形成する。なお、Ａ
ｕ薄のエッチャントとしてはヨードのヨー化カリ水溶液
を使用し、また、Ｎｉｌのエッチャントとしては、硝酸
、酢酸およびアセトンの混合液を使用する。そして、半
導体１の各信号取り出し電極３ ｈｊの反対側の面にＡ
ｕを一様に蒸着して共通電極２を形成する。なお、この
共通電極２は、上述の工程を行う前に形成しておいても
よい。Next, a photoresist (not shown) is applied on the surface of the Au film in a negative direction so that each of the recesses is exposed, and then solder bumps S ij are placed on each of the recesses to use the Au and Ni layers as current paths. Figure (C)) formed by electric field plating,
After removing the photoresist on the Au film with a stripping solution, the Au and Ni films are etched using each solder bump Sij as a mask, and then each solder bump S i
By melting and curing j at, for example, 200°C, an Au and Ni metal layer 8 having the shape shown in FIG. j and 9 La
s and solder bumps S ij are formed. In addition, A
An aqueous potassium iodide solution of iodine is used as the u-thin etchant, and a mixed solution of nitric acid, acetic acid, and acetone is used as the Nil etchant. Then, on the surface opposite to each signal extraction electrode 3 hj of the semiconductor 1,
A common electrode 2 is formed by uniformly depositing u. Note that this common electrode 2 may be formed before performing the above steps.
次に、他の実施例を第７図の部分断面図を参照しつつ説
明する。Next, another embodiment will be described with reference to the partial sectional view of FIG.
この例では、半導体１の一面側にリフトオフ法によりＡ
ｕ、ＣｕおよびＣｒの三層からなる信号取り出し電極７
３Ｎ、を行列状に形成する。次に、各信号取り出し電極
７３五、ＯＣｒ層上に、先の実施例と同様な手法で、Ａ
ｕおよびＣｕメタル層７８．ｊおよび？９．ｊ、ならび
にハンダバンプＳ ｉｊを形成する。そして、この各ハ
ンダバンプＳムｊをそれぞれ該当する基板４上の接続用
導体パターン６ ｉｊに接触させ、各ハンダバンプＳｉ
ｊを溶かした後硬化させることにより、先の実施例と同
様な構造を有する半導体放射線位置検出器を得る。なお
、この例では、ハンダバンプＳｉｊおよびメタル層７８
．Ｊ。In this example, A is applied to one side of the semiconductor 1 by the lift-off method.
Signal extraction electrode 7 consisting of three layers of u, Cu and Cr
3N, are formed in a matrix. Next, on each signal extraction electrode 735 and the OCr layer, A
u and Cu metal layer 78. j and? 9. j, and solder bumps S ij are formed. Then, each solder bump Smuj is brought into contact with the corresponding connection conductor pattern 6ij on the board 4, and each solder bump Si
By melting and curing j, a semiconductor radiation position detector having a structure similar to that of the previous embodiment is obtained. Note that in this example, the solder bumps Sij and the metal layer 78
．． J.
７９目を形成する際に塗布したフォトレジスト全てを除
去してもよく、この場合、各信号取り出し電極７３．ｊ
ＯＣｒ層面が露呈するが、Ｃｒはハンダ濡れ性が悪く、
各ハンダバンプＳ ｉｊが溶けた時に、その一部がメタ
ル層７８ｉｊ、７９ｉ、からはみ出しても、Ｃｒ層面上
で広がることはなく、互いに隣接する各信号取り出し電
極７３８、間で短絡が生じることはない。All of the photoresist applied when forming the 79th electrode may be removed, and in this case, each signal extraction electrode 73. j
The OCr layer surface is exposed, but Cr has poor solder wettability.
Even if a part of each solder bump Sij melts and protrudes from the metal layers 78ij, 79i, it will not spread on the Cr layer surface, and no short circuit will occur between adjacent signal extraction electrodes 738. .
なお、第１図に示す半導体放射線位置検出器複数個を配
列して第８図に示すような大面積を有する検出器アレイ
を構成してもよく、この場合、各検出器の放射線二次元
検出素子アレイＤ、をほとんど隙間なく隣接して配列す
ることが可能になり、放射線の小窓領域を掻めて少なく
することができる。Note that a detector array having a large area as shown in FIG. 8 may be configured by arranging a plurality of semiconductor radiation position detectors shown in FIG. It becomes possible to arrange the element arrays D adjacent to each other with almost no gaps, and the small radiation window area can be reduced.
また、以上は放射線二次元検出素子アレイＤ１を一つの
基板４に実装した例を説明したが、本発明は、これに限
られることなく、第９図に示すように、−列ごとの信号
取り出し電極３目・・・３ ＋Ｈにそれぞれ対応する回
路素子９５ａ・・・９５ｈが配設された基板９４ａ・・
・９４ｈを絶縁体Ｃを介して積層して基板ユニット９４
を形成し、この基板ユニット９４に放射線二次元検出素
子アレイＤ、を実装してもよい。Moreover, although the example in which the two-dimensional radiation detection element array D1 is mounted on one substrate 4 has been described above, the present invention is not limited to this, and as shown in FIG. A substrate 94a...on which circuit elements 95a...95h respectively corresponding to the third electrode...3+H are arranged.
・94h is laminated via an insulator C to form a board unit 94.
A two-dimensional radiation detection element array D may be mounted on this substrate unit 94.
〈発明の効果〉
以上説明したように、本発明の半導体放射線位置検出器
によれば、化合物半導体の一面に共通電極を設けるとと
もに、その反対側の面には複数個の信号取り出し電極を
設けて放射線二次元検出素子アレイを形成し、その各信
号取り出し電極には、それぞれ１個の信号処理回路を接
続したから、各画素ごとの放射線入射位置情報を個別に
、かつ、同時に出力することが可能になり、放射線撮影
装置に利用した際に、短時間で放射線二次元画像を得る
ことができる。しかも、二次元検出素子アレイに複数の
放射線が同時に入射した場合でも、それぞれの放射線の
入射位置情報を出力することが可能で、高い線量率を有
する放射線にも適応できる。<Effects of the Invention> As explained above, according to the semiconductor radiation position detector of the present invention, a common electrode is provided on one surface of a compound semiconductor, and a plurality of signal extraction electrodes are provided on the opposite surface. Since a two-dimensional radiation detection element array is formed and one signal processing circuit is connected to each signal extraction electrode, it is possible to output radiation incident position information for each pixel individually and simultaneously. When used in a radiation imaging device, two-dimensional radiation images can be obtained in a short time. Moreover, even when a plurality of radiations are simultaneously incident on the two-dimensional detection element array, it is possible to output information on the incident position of each radiation, and the present invention can be applied to radiation having a high dose rate.
また、本発明の製造方法によると、放射線二次元検出素
子アレイの全ての信号取り出し電極を、それぞれ該当す
る基板上の導体パターンつまり信号処理回路にハンダバ
ンプによって一度に電気的に接続すると同時に、二次元
検出素子アレイを基板に固着するので、製造時間がきわ
めて短かくなり、かつ、二次元検出素子アレイを基板に
固着するための工程を省略することができるとともに、
製品がコンパクトになる結果、製造コストがきわめて安
くなる。また、信号取り出し電極と信号処理回路との接
続時に、互いに隣接する信号取り出し電極間で短絡が生
じることがないので、信頼性の高い製品を得ることがで
きる。Further, according to the manufacturing method of the present invention, all the signal extraction electrodes of the two-dimensional radiation detection element array are electrically connected to the conductor patterns, that is, the signal processing circuits on the corresponding substrates at once by solder bumps, and at the same time, the two-dimensional Since the detection element array is fixed to the substrate, the manufacturing time is extremely shortened, and the process for fixing the two-dimensional detection element array to the substrate can be omitted.
As a result of the product becoming more compact, manufacturing costs are extremely low. Further, when connecting the signal extraction electrode and the signal processing circuit, a short circuit does not occur between adjacent signal extraction electrodes, so a highly reliable product can be obtained.
第１図は本発明実施例の全体斜視図、
第２図はその長手方向の縦断面図、
第３図はそのＡ部詳細図、
第４図は放射線二次元素子アレイＤｌの斜視図、第５図
は本発明実施例の回路構成を示すブロック図、
第６図は本発明実施例のＡｕおよびＮｉメタル層ならび
にハンダバンプの作製方法を説明するための図、
第７図乃至第９図は本発明の他の実施例を説明するため
の図、
第１０図は放射線二次元検出素子アレイの従来例の斜視
図、
第１１図および第１２図は発明が解決しようとする課題
を説明するための図である。
１・・・・化合物半導体
２・・・・共通電極
３１１＋ ３１ｚ、・−・、３□、−・・・・・・信
号取り出し電極
４・・・・基板
５□、５゜、・−１５バ、・−
・・・・信号処理回路
６１１＋ ６＋ｔ＋ −一・＋６ｊ□、°−一
・・・・接続用導体パターン
Ｓ ｊｉ・・・ハンダバンプ
Ｄ、・・・放射線二次元検出素子アレイ特許出願人
株式会社島津製作所 代 理 人
弁理士 西１）新２９１！
第１１図
第１２図 Ｄη
ｎｂ＋１１２４Fig. 1 is an overall perspective view of an embodiment of the present invention, Fig. 2 is a longitudinal cross-sectional view thereof, Fig. 3 is a detailed view of part A thereof, and Fig. 4 is a perspective view of the secondary radiation element array Dl. FIG. 5 is a block diagram showing the circuit configuration of the embodiment of the present invention. FIG. 6 is a diagram for explaining the method of manufacturing Au and Ni metal layers and solder bumps of the embodiment of the present invention. Figures for explaining other embodiments of the invention; Figure 10 is a perspective view of a conventional example of a two-dimensional radiation detection element array; Figures 11 and 12 are for explaining the problems to be solved by the invention; It is a diagram. 1... Compound semiconductor 2... Common electrode 311+ 31z, -..., 3□, -... Signal extraction electrode 4... Substrate 5□, 5°, -15 bar , -...Signal processing circuit 611+ 6+t+ -1・+6j□,°-1...Connecting conductor pattern Sji...Solder bump D,...Radiation two-dimensional detection element array Patent applicant
Shimadzu Corporation Representative
Patent Attorney Nishi 1) New 291! Figure 11 Figure 12 Dη nb+1124
Claims (2)
ともに、その反対側の面には、各画素に対応させるべく
行列状に複数個の信号取り出し電極を設けて放射線二次
元検出素子アレイを形成し、上記各信号取り出し電極に
は、それぞれ１個の信号処理回路を接続し、その各信号
処理回路の出力から放射線の二次元入射位置情報を得る
よう構成してなる、半導体放射線位置検出器。(1) A common electrode is provided on one surface of a plate-shaped compound semiconductor, and a plurality of signal extraction electrodes are provided in a matrix on the opposite surface to correspond to each pixel to form a two-dimensional radiation detection element array. a semiconductor radiation position detector configured such that one signal processing circuit is connected to each of the signal extraction electrodes, and two-dimensional incident position information of radiation is obtained from the output of each signal processing circuit. .
に導通するハンダバンプを形成し、かつ、上記信号処理
回路を基板上に配設するとともに、その基板上には、上
記各信号処理回路にそれぞれ個別に導通する複数の導体
パターンを、その各端部が上記各ハンダバンプの配置関
係に対応するように形成し、次に、上記各ハンダバンプ
それぞれを、該当する上記導体パターンの先端部に接触
させた状態で所定の温度で溶かした後硬化させることに
より、上記各信号取り出し電極とその各電極に該当する
上記導体パターンとを電気的に接続しつつ、上記放射線
二次元検出素子アレイを上記基板に固着することを特徴
とする、請求項１記載の半導体放射線位置検出器の製造
方法。(2) A solder bump is formed on each of the signal extraction electrodes to be electrically connected to each electrode, and the signal processing circuit is arranged on a substrate, and each of the signal processing circuits is connected to the signal processing circuit on the substrate. A plurality of individually conductive conductor patterns were formed so that their ends corresponded to the arrangement of the respective solder bumps, and then each of the solder bumps was brought into contact with the tip of the corresponding conductor pattern. By melting at a predetermined temperature in a state and then curing, the two-dimensional radiation detection element array is fixed to the substrate while electrically connecting each of the signal extraction electrodes and the conductor pattern corresponding to each electrode. A method of manufacturing a semiconductor radiation position detector according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63042831A JPH01216290A (en) | 1988-02-24 | 1988-02-24 | Semiconductor radiation position detector and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63042831A JPH01216290A (en) | 1988-02-24 | 1988-02-24 | Semiconductor radiation position detector and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01216290A true JPH01216290A (en) | 1989-08-30 |
Family
ID=12646912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63042831A Pending JPH01216290A (en) | 1988-02-24 | 1988-02-24 | Semiconductor radiation position detector and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01216290A (en) |
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-
1988
- 1988-02-24 JP JP63042831A patent/JPH01216290A/en active Pending
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