JPH01202677A - Apparatus for testing semiconductor circuit - Google Patents

Apparatus for testing semiconductor circuit

Info

Publication number
JPH01202677A
JPH01202677A JP2690688A JP2690688A JPH01202677A JP H01202677 A JPH01202677 A JP H01202677A JP 2690688 A JP2690688 A JP 2690688A JP 2690688 A JP2690688 A JP 2690688A JP H01202677 A JPH01202677 A JP H01202677A
Authority
JP
Japan
Prior art keywords
probe needle
semiconductor circuit
lines
contact
grounding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2690688A
Other languages
Japanese (ja)
Inventor
Akira Inoue
晃 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2690688A priority Critical patent/JPH01202677A/en
Publication of JPH01202677A publication Critical patent/JPH01202677A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To easily confirm the contact state of a probe needle with a microwave semiconductor circuit, by connecting the first and second earthing lines of the probe needle to a resistance measuring device. CONSTITUTION:Resistance measuring devices 12a, 12b are respectively connected to the first and second earthing lines 8a, 8b of a probe needle 10 and constituted by mounting a condenser 13 for earthing the lines 8a, 8b in a high frequency like manner, a power supply 14, a voltmeter 15 and an ammeter 16. After the probe needle 10 is brought into contact with a microwave semiconductor circuit 1, the power supply 14 is closed to read the values of both of the voltmeter 15 and the ammeter 16. By this method, the contact resistance values of the lines 8a, 8b and the first and second earthing electrodes 4a, 4b are indivisually measured to be compared with a reference value. When both resistance values are within a predetermined range, it is judged that the contact of the lines 7, 8a, 8b of the probe needle 10 with the electrodes 3, 4a, 4b of the semiconductor circuit 1 is well.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、半導体基板上に信号電極とその両側に第11
第2の接地用電極を設けてなるコプレーナ線路が形成さ
れたマイクロ波半導体回路の特性を調べる試験装置に関
する。
[Detailed Description of the Invention] <Industrial Application Field> The present invention provides a signal electrode on a semiconductor substrate and an eleventh electrode on both sides of the signal electrode.
The present invention relates to a test device for examining the characteristics of a microwave semiconductor circuit in which a coplanar line provided with a second grounding electrode is formed.

〈従来の技術〉 マイクロ波半導体回路Iには、第3図に示すように、半
導体基板2上に信号電極3とその両側に第1、第2の接
地用電極4a、4bを設けてなるコプレーナ線路5が形
成されたものがある。なお、第1、第2接地用電極4a
、4bは、バイアホール等により半導体基板2の裏面に
形成された接地用電極に接続されている。
<Prior Art> As shown in FIG. 3, the microwave semiconductor circuit I has a coplanar structure in which a signal electrode 3 is provided on a semiconductor substrate 2, and first and second grounding electrodes 4a and 4b are provided on both sides of the signal electrode 3. Some have a track 5 formed thereon. Note that the first and second grounding electrodes 4a
, 4b are connected to a grounding electrode formed on the back surface of the semiconductor substrate 2 through a via hole or the like.

このようなマイクロ波半導体回路1の特性を調べる場合
には、上記の信号電極3と第11第2接地用電極4a、
4bにそれぞれ対応して信号線路7と第11第2接地用
線路8a、8bが形成されたプローブ針10を備えた試
験装置が使用される。
When investigating the characteristics of such a microwave semiconductor circuit 1, the signal electrode 3, the eleventh second grounding electrode 4a,
A test device is used that includes a probe needle 10 in which a signal line 7 and eleventh and second grounding lines 8a and 8b are formed corresponding to the ground lines 4b and 4b, respectively.

そして、試験の際にはプローブ針IOの信号線路7、第
11第2接地用線路8a、8bをそれぞれマイクロ波半
導体回路lの信号電極3と第1、第2接地用電極4as
4bに接触させた後、試験装置の信号線路7からマイク
ロ波帯の高周波信号をマイクロ波半導体回路内に導入し
て各種の試験をところで、マイクロ波半導体回路の試験
を行う場合、信号電極3と信号線路7、第11第2接地
用電極4a、4bと第11第2接地用線路8a。
During the test, the signal line 7 of the probe needle IO, the eleventh and second grounding lines 8a and 8b are connected to the signal electrode 3 of the microwave semiconductor circuit l and the first and second grounding electrodes 4as, respectively.
4b, a high frequency signal in the microwave band is introduced into the microwave semiconductor circuit from the signal line 7 of the test device to perform various tests.By the way, when testing a microwave semiconductor circuit, the signal electrode 3 and The signal line 7, the eleventh second grounding electrodes 4a, 4b, and the eleventh second grounding line 8a.

8bがそれぞれ適正に接触されていないと、マイクロ波
帯の高周波信号を正確に測定することができなくなる。
If the contacts 8b are not properly contacted, it will not be possible to accurately measure the high frequency signal in the microwave band.

そこで、試験の際には、予めプローブ針IOがマイクロ
波半導体回路lに良好に接触しているか否かを確認する
必要が生じる。
Therefore, during the test, it is necessary to confirm in advance whether the probe needle IO is in good contact with the microwave semiconductor circuit l.

従来、プローブ針の接触状態を確認するには、顕微鏡に
よって接触部分を拡大し、人が直接それを観察するよう
にしており、そのため、測定の自動化、省力化の妨げと
なっていた。
Conventionally, to check the contact status of a probe needle, the contact area was magnified using a microscope and a person had to directly observe it, which hindered automation and labor-saving measurements.

本発明は、このような事情に鑑みてなされたものであっ
て、プローブ針がマイクロ波半導体回路に適正に接触し
ているか否かを容易に確認できるようにして、自動化、
省力化が図れるようにする本発明は、上記の目的を達成
するために、コプレーナ線路が形成されたマイクロ波半
導体回路の信号電極と第1、第2接地用電極にそれぞれ
対応して信号線路と第11第2接地用線路が形成された
プローブ針を備え、このプローブ針の第11第2接地用
線路に抵抗測定器を接続したことを特徴としている。
The present invention has been made in view of the above circumstances, and it is possible to easily confirm whether or not the probe needle is properly contacting the microwave semiconductor circuit, thereby improving automation,
In order to achieve the above-mentioned object, the present invention provides a signal line corresponding to the signal electrode and the first and second grounding electrodes of a microwave semiconductor circuit in which a coplanar line is formed. The present invention is characterized in that it includes a probe needle on which an eleventh second grounding line is formed, and a resistance measuring device is connected to the eleventh second grounding line of the probe needle.

〈作用〉 上記構成において、試験の際、プローブ針をマイクロ波
半導体回路に接触させた後、各抵抗測定器で第1、第2
接地用線路と回路側の第1、第2接地用電極との接触抵
抗値を個別に測定し、これらの値を基準値と比較する。
<Function> In the above configuration, during a test, after the probe needle is brought into contact with the microwave semiconductor circuit, the first and second
The contact resistance values between the grounding line and the first and second grounding electrodes on the circuit side are individually measured, and these values are compared with a reference value.

両抵抗値が所定の適正範囲内にあれば、プローブ針の各
線路とマイクロ波半導体回路の各電極との接触が良好で
あると判定することができる。
If both resistance values are within a predetermined appropriate range, it can be determined that the contact between each line of the probe needle and each electrode of the microwave semiconductor circuit is good.

〈実施例〉 第1図はマイクロ波半導体回路およびその試験装置の要
部を示す構成図であり、第3図に示す従来例に対応する
部分には、同一の符号を付している。第1図において、
lはマイクロ波半導体回路、2は半導体基板、3.4a
、4bは信号電極お上びその両側に設けられた第1、第
2の接地用電極で、この信号電極3と第1、第2接地用
電極4a。
<Embodiment> FIG. 1 is a block diagram showing the main parts of a microwave semiconductor circuit and its testing apparatus, and parts corresponding to the conventional example shown in FIG. 3 are given the same reference numerals. In Figure 1,
l is a microwave semiconductor circuit, 2 is a semiconductor substrate, 3.4a
, 4b are first and second grounding electrodes provided above the signal electrode and on both sides thereof, and the signal electrode 3 and the first and second grounding electrodes 4a.

4bとでコプレーナ線路5が形成されている。IOは半
導体回路試験装置に備えられたプローブ針であり、この
プローブ針10’にマイクロ波半導体回路lの信号電極
3と第1、第2接地用電極4a。
4b forms a coplanar line 5. IO is a probe needle provided in the semiconductor circuit testing apparatus, and the signal electrode 3 of the microwave semiconductor circuit 1 and the first and second grounding electrodes 4a are attached to this probe needle 10'.

4bにそれぞれ対応して信号線路7と第11第2接地用
線路8a、8bが形成されている。
A signal line 7 and eleventh and second ground lines 8a and 8b are formed corresponding to the ground lines 4b, respectively.

この実施例の特徴は、上記のプローブ針lOの第11第
2接地用線路8a、8bにそれぞれ抵抗測定器12a 
、  12bが接続されていることである。各抵抗測定
器12a、12bは、第1、第2接地用線路8a、8b
を高周波的に接地するために付加されたコンデンサ13
、電源14、電圧計15、電流計16を備えて構成され
ている。
The feature of this embodiment is that a resistance measuring device 12a is connected to each of the eleventh and second grounding lines 8a and 8b of the probe needle lO.
, 12b are connected. Each resistance measuring device 12a, 12b has first and second grounding lines 8a, 8b.
Capacitor 13 added to ground at high frequency
, a power source 14, a voltmeter 15, and an ammeter 16.

上記構成において、試験の際、プローブ針10をマイク
ロ波半導体回路1に接触させた後、各抵抗測定器12a
112bの電源14を投入して電圧計15と電流計16
の値を・読み取ることにより、第1、第2接地用線路8
a、8bと第11第2接地用電極4a14bとの接触抵
抗値を個別に測定し、これらの値を基準値と比較する。
In the above configuration, during testing, after bringing the probe needle 10 into contact with the microwave semiconductor circuit 1, each resistance measuring device 12a
Turn on the power supply 14 of 112b and check the voltmeter 15 and ammeter 16.
By reading the value of the first and second grounding lines 8
The contact resistance values between a and 8b and the eleventh second grounding electrode 4a14b are individually measured, and these values are compared with a reference value.

そして、両抵抗値が所定の適正範囲内にあれば、プロー
ブ針IOの各線路7.8a、8bとマイクロ波半導体回
路1の各電極3.4a、4bとの接触が良好であると判
定する。すなわち、第2図(a)に示すように、プロー
ブ針lOの各線路7.8a、8bがいずれも回路側の各
電極3.4a、4bに良好に接触している場合には、測
定される両抵抗値は適正範囲内にある。これに対して、
同図(b)あるいは同図(C)に示すように、プローブ
針が傾いている場合には、いずれか一方の抵抗測定器1
2aあるいは12で得られる接触抵抗の値が大きくなる
ので、プローブ針が適正に接触していないことを判定す
ることができる。なお、プローブ針10の信号線路7と
回路側の信号電極3の接触抵抗値は測定していないが、
信号線路7の両側の接地用線路8a、8bが良好に接触
しておれば、必然的に信号線路7も良好に接触すること
になるので、特にその接触抵抗値を測定しなくても接触
状態の良否を判定する場合に支障は生じない。
If both resistance values are within a predetermined appropriate range, it is determined that the contact between each line 7.8a, 8b of the probe needle IO and each electrode 3.4a, 4b of the microwave semiconductor circuit 1 is good. . That is, as shown in FIG. 2(a), if the lines 7.8a and 8b of the probe needle 10 are in good contact with the electrodes 3.4a and 4b on the circuit side, no measurement is possible. Both resistance values are within the appropriate range. On the contrary,
If the probe needle is tilted as shown in Figure (b) or Figure (C), either resistance measuring device 1
Since the contact resistance value obtained in 2a or 12 becomes large, it can be determined that the probe needle is not in proper contact. Although the contact resistance value between the signal line 7 of the probe needle 10 and the signal electrode 3 on the circuit side was not measured,
If the grounding lines 8a and 8b on both sides of the signal line 7 are in good contact, the signal line 7 will inevitably be in good contact, so the contact state can be determined without particularly measuring the contact resistance value. There is no problem when determining the quality of the product.

〈発明の効果〉 本発明によれば、プローブ針とマイクロ波半導体回路の
接触状態の良否を、プローブ針の第1、第2接地用線路
と回路側の第1、第2接地用電極との接触抵抗値を抵抗
測定器で個別に測定することにより判定するようにして
いるので、従来に比べて、接触状態の良否の確認を極め
て容易に行えるようになり、測定の自動化、省力化を図
ることが可能となる等の優れた効果が発揮される。
<Effects of the Invention> According to the present invention, the quality of the contact between the probe needle and the microwave semiconductor circuit can be determined by checking the contact state between the probe needle's first and second grounding lines and the first and second grounding electrodes on the circuit side. Since the contact resistance value is determined by individually measuring it with a resistance measuring device, it is much easier to check whether the contact condition is good or bad than before, and automation of measurement and labor savings are achieved. Excellent effects such as making it possible to do this are achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はマイクロ波半導体回路およびその試験装置の要
部を示す構成図、第2図はプローブ針の各線路とマイク
ロ波半導体回路の各電極との接触状態を示す説明図、第
3図は従来の試験装置の一例を示す構成図である。 l・・・マイクロ波半導体回路、2・・・半導体基板、
3・・・信号電極、4a、4b・・・接地用電極、7・
・・信号線路、8a、8b・・・接地用線路、10・・
・プローブ針、12a 、  12b・・・抵抗測定器
。 第3図 手続補正書(自発) 平成1年、7月7日 2、発明の名称  半導体回路試験装置:3、hli市
をする省。 事件との関係 特許出願人 郵便番号+00 住 所 東京都千代田区丸の内二丁目2番3号4、代理
人 郵便番号100 住 所 東京都千代田区丸の内二丁目2番3号三菱電機
株式会社内 氏 名 (7375)弁理士 大 岩 増 雄 (外2
名)(連絡先03(213)3421特許部)5、?1
1)正命令の日付   自発1ili正6、hli i
f−により増加する発明の数     なし7、hli
正の対象 8、補正の内容 (1)明細書の「特許請求の範囲」の欄を別紙の通り補
正する。 (2)明細書の1発明の詳細な説明」の欄を次の通り補
正する。 明細書の第1頁第17行目〜第18行目、明細書の第2
頁第4行目及び明細書の第5頁第3行目の3箇所に「コ
プレーナ」とあるのを削除する。 以上 補正後の特許請求の範囲 (1)  半導体基板上に、信号電極とその両側に第1
;第2の接地用電極を設けてなt吠路が形成されたマイ
クロ波半導体回路の特性を調べる試験装置であって、 萌記信号電極と第1、第2接地用電極にそれぞれ対応し
て信号線路と第1、第2接地用線路が形成されたプロー
ブ針を備え、このプローブ針の前記第1、第2接地用線
路に抵抗測定器を接続したことを特徴とする半導体回路
試験装置。
Figure 1 is a configuration diagram showing the main parts of a microwave semiconductor circuit and its testing equipment, Figure 2 is an explanatory diagram showing the contact state between each line of the probe needle and each electrode of the microwave semiconductor circuit, and Figure 3 is an explanatory diagram showing the contact state between each line of the probe needle and each electrode of the microwave semiconductor circuit. FIG. 1 is a configuration diagram showing an example of a conventional test device. l...Microwave semiconductor circuit, 2...Semiconductor substrate,
3...Signal electrode, 4a, 4b...Grounding electrode, 7.
...Signal lines, 8a, 8b...Grounding lines, 10...
- Probe needles, 12a, 12b...resistance measuring device. Figure 3 Procedural Amendment (Voluntary) July 7, 1999 2. Name of invention Semiconductor circuit testing equipment: 3. Ministry of HLI City. Relationship to the case Patent applicant zip code +00 Address 2-2-3-4 Marunouchi, Chiyoda-ku, Tokyo Agent zip code 100 Address Mitsubishi Electric Corporation, 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (7375) Masuo Oiwa, Patent Attorney (External 2)
Name) (Contact 03 (213) 3421 Patent Department) 5,? 1
1) Date of positive order Voluntary 1ili positive 6, hli i
Number of inventions increased by f- None 7, hli
Positive subject 8, content of amendment (1) The "Claims" column of the specification is amended as shown in the attached sheet. (2) The column "Detailed explanation of one invention" in the specification is amended as follows. Page 1, lines 17 to 18 of the specification, 2nd page of the specification
Delete the word "coplanar" in three places: the fourth line of the page and the third line of the fifth page of the specification. Claims (1) after the above amendment: A signal electrode on a semiconductor substrate and a first electrode on both sides thereof.
; A test device for testing the characteristics of a microwave semiconductor circuit in which a second grounding electrode is provided to form a narrow path, the test device being provided with a second grounding electrode corresponding to the signal electrode and the first and second grounding electrodes, respectively. 1. A semiconductor circuit testing device comprising: a probe needle having a signal line and first and second grounding lines formed thereon; and a resistance measuring device connected to the first and second grounding lines of the probe needle.

Claims (1)

【特許請求の範囲】[Claims] (1)半導体基板上に、信号電極とその両側に第1、第
2の接地用電極を設けてなるコプレーナ線路が形成され
たマイクロ波半導体回路の特性を調べる試験装置であっ
て、 前記信号電極と第1、第2接地用電極にそれぞれ対応し
て信号線路と第1、第2接地用線路が形成されたプロー
ブ針を備え、このプローブ針の前記第1、第2接地用線
路に抵抗測定器を接続したことを特徴とする半導体回路
試験装置。
(1) A test device for examining the characteristics of a microwave semiconductor circuit in which a coplanar line is formed on a semiconductor substrate and includes a signal electrode and first and second grounding electrodes on both sides thereof, the signal electrode and a probe needle in which a signal line and first and second grounding lines are formed corresponding to the first and second grounding electrodes, respectively, and resistance measurement is performed on the first and second grounding lines of the probe needle. A semiconductor circuit testing device characterized in that a device is connected to the device.
JP2690688A 1988-02-08 1988-02-08 Apparatus for testing semiconductor circuit Pending JPH01202677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2690688A JPH01202677A (en) 1988-02-08 1988-02-08 Apparatus for testing semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2690688A JPH01202677A (en) 1988-02-08 1988-02-08 Apparatus for testing semiconductor circuit

Publications (1)

Publication Number Publication Date
JPH01202677A true JPH01202677A (en) 1989-08-15

Family

ID=12206269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2690688A Pending JPH01202677A (en) 1988-02-08 1988-02-08 Apparatus for testing semiconductor circuit

Country Status (1)

Country Link
JP (1) JPH01202677A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006329836A (en) * 2005-05-26 2006-12-07 Advantest Corp Contact terminal for measurement, measuring device, probe card set, wafer prober device, and testing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006329836A (en) * 2005-05-26 2006-12-07 Advantest Corp Contact terminal for measurement, measuring device, probe card set, wafer prober device, and testing device

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