JPH01181137A - Storage unit - Google Patents

Storage unit

Info

Publication number
JPH01181137A
JPH01181137A JP63004750A JP475088A JPH01181137A JP H01181137 A JPH01181137 A JP H01181137A JP 63004750 A JP63004750 A JP 63004750A JP 475088 A JP475088 A JP 475088A JP H01181137 A JPH01181137 A JP H01181137A
Authority
JP
Japan
Prior art keywords
data
read
address
storage unit
banks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63004750A
Other languages
Japanese (ja)
Inventor
Susumu Yoshino
進 吉野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63004750A priority Critical patent/JPH01181137A/en
Publication of JPH01181137A publication Critical patent/JPH01181137A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To realize the high performance and the small capacity of a storage unit by adding a block reading/writing function and an interleaving function to the storage unit. CONSTITUTION:The read data 521 corresponding to the stored data 501.0 and 501.1 and the read data 522 corresponding to the stored data 502.0 and 502.1 are read out to a read data line 55 through a selection circuit 54 with the use of an interface clock 57 and a request command address signal 58. These read-out data is used as the read data 60. In this case, a high-speed access cycle 63 means the action modes including so-called nibble, page and static column modes, etc. In such a way, both a block transfer function and an interleaving function are secured by setting a data access unit opposite to a storage unit (bank).

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は情報処理装置に関し、特に記憶装置の読み出し
、書き込みに係わる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an information processing device, and particularly to reading and writing to a storage device.

〔従来の技術〕[Conventional technology]

従来、この種の記憶装置の読み出し、書き込みは、ブロ
ック転送だけ、あるいはインタリーフだけが可能なもの
?ご限られていた。すなわち、1つのコマンドとアドレ
ス指定により複数のデータの書き込みまたは読み出しが
可能なもの、あるいは独立に読み出し、書き込みができ
る複数のバンクを11市え、これらに対するインタリー
フが可能なものだけに限られていた。
Conventionally, reading and writing to this type of storage device was possible only by block transfer or only by interleaf? It was limited. In other words, it is limited to those that can write or read multiple data with one command and address specification, or those that have 11 banks that can be read and written independently and can interleaf these. Ta.

第3図はこのような従来の記憶装置でブロック転送が可
能なものを示すブロック図、第4図はその動作タイミン
グ図である。
FIG. 3 is a block diagram showing such a conventional storage device capable of block transfer, and FIG. 4 is an operation timing diagram thereof.

第3図において、行方向がデータアクセス単位11に対
応し、また列方向くワード方向)12にn個配列された
記憶素子16.、、〜162.。、16□、1〜16゜
+h % 163+ 1〜16321.16、、、〜1
649、が設けられる。それぞれの記憶素子例えば16
.、、  は列方向(ワード方向)12にOからm個の
記憶単位16.、、。〜16...”から構成される。
In FIG. 3, the row direction corresponds to a data access unit 11, and n memory elements 16. ,,~162. . , 16□, 1~16°+h% 163+ 1~16321.16,,,~1
649 is provided. Each storage element e.g. 16
.. ,, are O to m storage units 16 in the column direction (word direction) 12. ,,. ~16. .. .. ”.

記憶素子16.、、.1629. .163.、 .1
6.、、  の記憶単位16、、、 ’ 、162.、
 。、163.、 。、16.、、 ’2こはデータ2
01.。、20゜、。、203.。、20、、、(それ
ぞれ図のb o、 b l+ b 2.b 3)が格納
されている。列方向の記憶素子の最後の記憶単位162
19、!6.,7.163,9.16.、イから:まそ
れぞれに対応して、データアクセス単位の読出データ2
31.232.233.234が選択回路25を通して
読出データ線26から読み出される。
Memory element 16. ,,. 1629. .. 163. , . 1
6. , , storage unit 16, , ' , 162. ,
. , 163. , . , 16. ,, '2 is data 2
01. . , 20°. , 203. . , 20, , (bo, b l+ b 2, b 3 in the figure, respectively) are stored. The last storage unit 162 of the storage element in the column direction
19,! 6. , 7.163, 9.16. , from A: Corresponding to each, read data 2 in data access unit
31.232.233.234 are read from the read data line 26 through the selection circuit 25.

第4図(ま上記従来例の読出動作タイミング図である。FIG. 4 (This is a timing diagram of the read operation of the above-mentioned conventional example.

インタフェースクロック29(図のa)と、1リクエス
トコマンド、アドレス信号31(図のb)が図示のよう
に与えられる。これにより、データ(第3図の)の続出
データ(第4図c −f )が、選択回路25(第3図
)により選択されて、続出データ線26(第3図)に続
出データ35(図のg)として出力される。
An interface clock 29 (a in the figure), one request command, and an address signal 31 (b in the figure) are applied as shown. As a result, the successive data (c-f in FIG. 4) of the data (in FIG. 3) is selected by the selection circuit 25 (FIG. 3), and the successive data 35 (FIG. 3) is sent to the successive data line 26 (FIG. 3). It is output as g) in the figure.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、このような従来の記憶装置には次のよう
な欠点がある。すなわち、ブロック転送だけ可能な記憶
装置の場合は、読み出しは性能上問題ないが、書き込み
のときは、アドレスが連続していないと、1つ1つ単発
でそれを実行しなければならない。このような場合は、
前の書込サイクルが終了して初めて次の書込サイクルの
始動が可能になる。しかしながら、このような動作では
実行効率が著しく低下し、性能も低下するなどの欠点が
ある。
However, such conventional storage devices have the following drawbacks. That is, in the case of a storage device capable of only block transfer, there is no performance problem in reading, but when writing, if the addresses are not consecutive, it must be executed one by one. In such a case,
The next write cycle can only be started once the previous write cycle has finished. However, such an operation has drawbacks such as a significant drop in execution efficiency and performance.

一方、インタリーフだけ可能な記憶装置においては、上
記のような不連続アドレスに対する書込性能の低下はな
い。しかしながら、逆に、連続したアドレスの書き込み
および読み出しの場合でも1つ1つアドレスを発生しな
ければならず、実行効率が低下するという欠点がある。
On the other hand, in a storage device capable of only interleafing, there is no drop in write performance for discontinuous addresses as described above. However, conversely, even when writing and reading consecutive addresses, each address must be generated one by one, which has the disadvantage of lowering execution efficiency.

これはバス方式の場合は特に顕著である。更に、インタ
リーブ専用記憶装置は、その性格上、性能を上げるため
に一般に少なくとも4個のバンクを有している(いわゆ
る4ウエイインタリーフ)。しかしながらこのようにす
ると、基本記憶容量や増設記憶容量が大きくなるという
欠点が生じる。
This is especially noticeable in the case of a bus system. Furthermore, due to their nature, interleave-only storage devices typically have at least four banks (so-called 4-way interleaf) to increase performance. However, this method has the disadvantage that the basic storage capacity and the additional storage capacity become large.

そこで本発明の目的は、ブロック続出、書込機能とイン
タリーフ機能の両機能を共に有してそれぞれ単独機能で
動作させたときの欠点を補うことができる記憶装置を提
供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a storage device that has both block successive functions, a write function, and an interleaf function, and is capable of compensating for the drawbacks when each function is operated independently.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の記憶装置は、複数の独立したバンクにして、各
々のアドレスが行方向に連続し、列方向:ま、それぞれ
の行方向の最後のもののアドレスにそれぞれ連続し、行
方向の各々が1つのデータアクセス単位に対応するよう
に配列されたバンクと、これらのバンクに対し、1つの
バンクのアドレスを指定するだけでブロック転送により
複数の連続する行方向のバンクに複数のデータアクセス
単位に対応するデータの書き込みまたは読み出しを可能
にし、これと共にインタリーフにより列方向のバンクに
順次書き込みまたは読み出しを可能にするよう1つの命
令により制御信号を与えて制御するタイミング制御部と
を具備している。
The storage device of the present invention has a plurality of independent banks, each with addresses consecutive in the row direction, each consecutive with the address of the last one in each row, and each bank with one address in each row. Banks are arranged to correspond to one data access unit, and for these banks, by simply specifying the address of one bank, it is possible to support multiple data access units to multiple consecutive banks in the row direction by block transfer. The timing control unit provides a control signal by one command so as to enable writing or reading of data to be written or read, and also to enable sequential writing or reading of data in the banks in the column direction by interleaving.

従って、本発明の記憶装置は、ブロック続出、書込機能
とインクリープ機能とを合わせ持ち、両者が単独に機能
したときの欠点を除いて互い;こ補い合うようにしたの
で、性能を高く、かつ記憶容量を小さくすることができ
る。
Therefore, the storage device of the present invention has both a block succession function, a write function, and an increment function, and these functions complement each other except for the drawbacks when they function independently, so that it has high performance and Storage capacity can be reduced.

〔実施例〕〔Example〕

以下実施例につき本発明の詳細な説明する。 The present invention will be described in detail below with reference to Examples.

第1図は本発明jこよる記憶装置の一実施例を示すブロ
ック図、第2図はその動作タイミング例である。
FIG. 1 is a block diagram showing an embodiment of a storage device according to the present invention, and FIG. 2 is an example of its operation timing.

第1図において、記憶素子:ま列方向(ワード方向)1
2にn個、行方向に2明記列され、これらをそれぞれ、
41.、、〜411.。、41□、1〜41□9、とす
る。また、それぞれの記憶素子は列方向12に0からm
個の記憶単位(バンク)41、、.0〜41.、、’″
、41□+1゜〜41□、1″から構成されている。記
憶素子410,3.412.lの記憶単位(バンク)4
1.、、。、41□、11 ;41+、+ ”、  4
12+1 ”+ま行方向に1つのデータアクセス単位4
6に対応し、それぞれデータ501.。、50゜、。;
5L、+、50□、1 (図のbo、b、  ;l)2
  、b3)が格納されている。それぞれの記憶単位 (バンク)jこ対応するデータアクセス単位46の読出
データ52+、52□は選択回路54を通して読出デー
タ線55から読みだされる。なお、インタリーフは、記
憶単位(バンク)を2つもたせたので、周知の方法で2
ウエイインタリーフが可能である。
In FIG. 1, memory element: column direction (word direction) 1
2, n pieces are arranged in two columns in the row direction, and these are respectively written as
41. ,,~411. . , 41□, 1 to 41□9. Furthermore, each memory element is arranged in the column direction 12 from 0 to m.
storage units (banks) 41, . 0-41. ,,'″
, 41□+1° to 41□, 1''. Storage unit (bank) 4 of storage elements 410, 3.412.l
1. ,,. ,41□,11;41+,+'',4
12+1 ”+1 data access unit 4 in the row direction
6, and data 501.6 respectively. . , 50°. ;
5L, +, 50□, 1 (bo, b, ;l in the figure) 2
, b3) are stored. Read data 52+, 52□ of the data access unit 46 corresponding to each storage unit (bank) is read from the read data line 55 through the selection circuit 54. In addition, since the interleaf has two memory units (banks), it can be stored in a well-known manner.
Way interleaf is possible.

次に、第2図に基づいて動作を説明する。Next, the operation will be explained based on FIG.

インクフェースクロック57(図のa)と、リクエスト
コマンド、アドレス信号58(図のb)が図示のように
与えられる。これにより、選択回路54を通して続出デ
ータ線55に、第1図の格納データ50.、、 、50
.、、  (図のbo 、 bz  )に対応する続出
データ52.(図のC)と、同様に格納データ502.
。、50□、+ (図のす、。
An ink face clock 57 (a in the figure), a request command, and an address signal 58 (b in the figure) are applied as shown. As a result, the stored data 50. of FIG. ,, ,50
.. , , (bo, bz in the figure) successive data 52. (C in the figure) and similarly stored data 502.
. , 50□, + (Fig.

bs  )に対応する続出データ52□ (図のd)が
読み出され、続出データ60(図のe)になる。
The successive data 52□ (d in the figure) corresponding to bs) is read out and becomes the successive data 60 (e in the figure).

ここで、高速アクセスサイクル(図のThe)53;ま
、いわゆるニブルモード、ページモード、スタティック
カラムモードなどの動作モードである。
Here, the high-speed access cycle (The in the figure) 53 is an operation mode such as a so-called nibble mode, page mode, or static column mode.

以上のように、1つのデータアクセス単位を記憶単位(
バンク)に対応させることにより、ブロック転送機能と
インタリーフ機能を共に合わせ持つことができる。
As described above, one data access unit is defined as a storage unit (
By making it compatible with banks), it is possible to have both block transfer function and interleaf function.

〔発明の効果〕〔Effect of the invention〕

このように、本発明の記憶装置は、ブロック続出、書込
機能とインタリーフ機能とを合わせ持つことjこより、
両機能の欠点を補い合ううことかでき、かつ高性能で、
基本記憶容量および増設記憶容量が小さくて済むように
できる効果がある。
As described above, the storage device of the present invention has both block successive, write function, and interleaf function.
It can compensate for the shortcomings of both functions, and has high performance.
This has the effect of reducing the basic storage capacity and additional storage capacity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による記憶装置の一実施例を示すブロッ
ク図、第2図は第1図の実施例の動作タイミングを示す
図、第3図は従来例を示すブロック図、第4図はその動
作タイミング図である。 41、、、 ’  、 41.、、 ’ 、 41□+
l’  + 412113・・・・・・記憶単位(バン
ク)。 夷2図 第4図
FIG. 1 is a block diagram showing an embodiment of the storage device according to the present invention, FIG. 2 is a diagram showing the operation timing of the embodiment of FIG. 1, FIG. 3 is a block diagram showing a conventional example, and FIG. It is an operation timing diagram. 41,,, ', 41. ,, ' , 41□+
l' + 412113... Memory unit (bank). Figure 2 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 各々のアドレスが行方向に連続し、列方向は、それぞれ
の行方向の最後のもののアドレスにそれぞれ連続し、行
方向の各々が1つのデータアクセス単位に対応するよう
に配列された複数の独立したバンクと、これらのバンク
に対し、1つのバンクのアドレスを指定するだけでブロ
ック転送によりバンクの一定の列アドレスに対し複数の
連続する行方向のバンクに複数のデータアクセス単位に
対応するデータの書き込みまたは読み出しを可能にし、
これと共に行方向の一定のアドレスに対し列方向のバン
クに順次インタリーフにより書き込みまたは読み出しを
可能にするように1つの命令に基づいて制御信号を与え
て制御するタイミイグ制御部とを具備することを特徴と
する記憶装置。
A plurality of independent data access units arranged such that each address is consecutive in the row direction, the column direction is consecutive to the address of the last one in each row direction, and each row direction corresponds to one data access unit. Write data corresponding to multiple data access units to multiple consecutive row-direction banks for a certain column address of the bank by block transfer by simply specifying the address of one bank for these banks. or enable reading,
In addition, a timing control unit is provided which controls by giving a control signal based on one command so as to enable writing or reading to a certain address in the row direction to banks in the column direction sequentially by interleaving. Characteristic storage device.
JP63004750A 1988-01-14 1988-01-14 Storage unit Pending JPH01181137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63004750A JPH01181137A (en) 1988-01-14 1988-01-14 Storage unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63004750A JPH01181137A (en) 1988-01-14 1988-01-14 Storage unit

Publications (1)

Publication Number Publication Date
JPH01181137A true JPH01181137A (en) 1989-07-19

Family

ID=11592583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63004750A Pending JPH01181137A (en) 1988-01-14 1988-01-14 Storage unit

Country Status (1)

Country Link
JP (1) JPH01181137A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05120129A (en) * 1991-05-15 1993-05-18 Internatl Business Mach Corp <Ibm> Multiplex-bank large-area memory card
JPH05241948A (en) * 1991-12-30 1993-09-21 Internatl Business Mach Corp <Ibm> Personal computer
JPH07175753A (en) * 1993-12-20 1995-07-14 Nec Corp Display memory write data control circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528191A (en) * 1978-08-22 1980-02-28 Nippon Telegr & Teleph Corp <Ntt> Memory unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528191A (en) * 1978-08-22 1980-02-28 Nippon Telegr & Teleph Corp <Ntt> Memory unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05120129A (en) * 1991-05-15 1993-05-18 Internatl Business Mach Corp <Ibm> Multiplex-bank large-area memory card
JPH05241948A (en) * 1991-12-30 1993-09-21 Internatl Business Mach Corp <Ibm> Personal computer
JPH07175753A (en) * 1993-12-20 1995-07-14 Nec Corp Display memory write data control circuit

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