JPH01179765A - Aluminum nitride sintered body and production thereof - Google Patents
Aluminum nitride sintered body and production thereofInfo
- Publication number
- JPH01179765A JPH01179765A JP63002184A JP218488A JPH01179765A JP H01179765 A JPH01179765 A JP H01179765A JP 63002184 A JP63002184 A JP 63002184A JP 218488 A JP218488 A JP 218488A JP H01179765 A JPH01179765 A JP H01179765A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- aluminum nitride
- weight
- thermal conductivity
- iia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 10
- -1 fatty acid salt Chemical class 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 7
- 239000000194 fatty acid Substances 0.000 claims abstract description 7
- 229930195729 fatty acid Natural products 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 abstract description 2
- OCICZGVKONIIMH-UHFFFAOYSA-K C(CCCCCCCCCCCCCCC)(=O)[O-].[Y+3].C(CCCCCCCCCCCCCCC)(=O)[O-].C(CCCCCCCCCCCCCCC)(=O)[O-] Chemical compound C(CCCCCCCCCCCCCCC)(=O)[O-].[Y+3].C(CCCCCCCCCCCCCCC)(=O)[O-].C(CCCCCCCCCCCCCCC)(=O)[O-] OCICZGVKONIIMH-UHFFFAOYSA-K 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は窒化アルミニウム焼結体およびその製造方法に
係り、更に詳しくは緻密質で熱伝導性、絶縁性、誘電率
などの実用」二の諸特性に秀れている窒化アルミニウム
焼結体の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an aluminum nitride sintered body and a method for manufacturing the same, and more specifically, the present invention relates to an aluminum nitride sintered body and a method for manufacturing the same, and more specifically, it is dense and has practical properties such as thermal conductivity, insulation, and dielectric constant. The present invention relates to a method for producing an aluminum nitride sintered body that has excellent properties.
［従来の技術］
最近のＬＳＩの進歩はめざましく、集積度の向上が著し
い。これには、ＩＣチップサイズの向上も寄与しており
、ＩＣチップサイズの向上に伴ってパッケージ当りの発
熱量か増大している。このため基板材料の放熱性か重要
視されるようになってきた。また、従来ＩＣ基板として
用いられていたアルミナ焼結体の熱伝導率では放熱性が
不十分てあり、ＩＣチップの発熱量の増大に対応できな
くなりつつある。このためアルミナ基板に代わるものと
して、高熱伝導性のベリリア側板が検討されているが、
へりリアは毒性か強く取扱いか難しいという欠点かある
。[Prior Art] Recent advances in LSI have been remarkable, and the degree of integration has been significantly improved. The improvement in IC chip size also contributes to this, and as the IC chip size improves, the amount of heat generated per package increases. For this reason, importance has been placed on the heat dissipation properties of substrate materials. Further, the thermal conductivity of alumina sintered bodies conventionally used as IC substrates is insufficient in heat dissipation, and it is becoming impossible to cope with the increase in the amount of heat generated by IC chips. For this reason, highly thermally conductive beryllia side plates are being considered as an alternative to alumina substrates.
Herilia has the disadvantage of being highly toxic and difficult to handle.
窒化アルミニウム（Ａ １ Ｎ）は、本来、材質的に高
熱伝導性、薗絶縁性を有し、毒性もないため、半導体工
業において絶縁材料あるいはパッケージ飼料として注目
を集めている。BACKGROUND ART Aluminum nitride (A 1 N) originally has high thermal conductivity and insulation properties, and is non-toxic, so it is attracting attention as an insulating material or packaging feed in the semiconductor industry.
［発明が解決しようとする問題点］
上述のように窒化アルミニウムは理論的には１１１、結
晶としては高熱伝導性、高絶縁性を有する材料である。[Problems to be Solved by the Invention] As described above, aluminum nitride is a material having theoretically 111 and high thermal conductivity and high insulation properties as a crystal.
しかしながら、窒化アルミニウム粉末から焼結体を製造
する場合、窒化アルミニウム粉末自体の焼結性か良くな
いため、粉末成形後、焼結して得られる窒化アルミニウ
ム焼結体の相対密度（窒化アルミニウムの理論密度３．
２６ｇ／ｃｍ３を基準とする）は、焼結条件にも依るが
、高々７０〜８０％しか示さず、多量の気孔を包含する
。However, when producing a sintered body from aluminum nitride powder, the sinterability of the aluminum nitride powder itself is not good, so the relative density of the aluminum nitride sintered body obtained by sintering after powder compaction (aluminum nitride theory) Density 3.
26 g/cm3), depending on the sintering conditions, shows only 70 to 80% at most and includes a large amount of pores.
一方、窒化アルミニウム焼結体の如き絶縁性セラミック
スの熱伝導機構は、フォノン伝導を主体とするため気孔
、不純物等の欠陥はフォノン散乱を起こし、熱伝導性は
低レベルのものしか得られない。On the other hand, the heat conduction mechanism of insulating ceramics such as aluminum nitride sintered bodies is mainly based on phonon conduction, and defects such as pores and impurities cause phonon scattering, resulting in only a low level of thermal conductivity.
緻密質で、良好な熱伝導性の窒化アルミニウム焼結体を
得るため窒化アルミニウム粉末に種々の焼結助剤を添加
し、ホットプレスあるいは常圧焼結することか試みられ
ており、かなり良質の焼結体が得られている。たとえば
、酸化カルシウム（Ｃａｂ）、酸化バリウム（Ｂ ａ
Ｏ）、酸化ストロンチウム（ＳｒＯ）などを窒化アルミ
ニウム粉末に添加して焼結する方法（特公昭５８−４９
５１０号）かある。この方法によれば相対密度９８％以
上で、熱伝導率０．１０〜０．１３ｃａｌ ７ｃｍ・ｓ
ｅｅ −ｄｅｇ（４２〜５４Ｗ／ｍ、ｋ） （室温）の
ものが得られている。しかし、この程度の値の熱伝導率
では今後のＩＣ，ＬＳＩの集積度向上による発熱量の増
大に対応するには十分とはいえない。In order to obtain a dense aluminum nitride sintered body with good thermal conductivity, attempts have been made to add various sintering aids to aluminum nitride powder and perform hot pressing or pressureless sintering. A sintered body has been obtained. For example, calcium oxide (Cab), barium oxide (Ba
A method of adding strontium oxide (SrO), strontium oxide (SrO), etc. to aluminum nitride powder and sintering it (Japanese Patent Publication No. 58-49
No. 510). According to this method, the relative density is 98% or more, the thermal conductivity is 0.10 to 0.13 cal, 7 cm・s
ee-deg (42 to 54 W/m, k) (room temperature) has been obtained. However, this level of thermal conductivity cannot be said to be sufficient to cope with the increase in heat generation due to future improvements in the degree of integration of ICs and LSIs.
一方、緻密質で高強度の窒化アルミニウム焼結体を得る
ことを目的として、窒化アルミニウム粉末にＹ２Ｏ３及
びＳｉＯ２等を添加する試みもなされており（特公昭５
（ｉ−９４７５号）、９８％以上の相対密度を得ている
か、熱伝導率は０．０７ｃａｌ／ｃｍ−ｓｅｅ −ｄｃ
ｇ（２９Ｗ／ｍ、ｋ）に満たない程の低レベルである。On the other hand, attempts have been made to add Y2O3, SiO2, etc. to aluminum nitride powder with the aim of obtaining a dense and high-strength aluminum nitride sintered body (Tokukō Kokō 5).
(No. i-9475), the relative density is 98% or more, and the thermal conductivity is 0.07 cal/cm-see-dc.
The level is so low as to be less than g (29 W/m, k).
本発明の目的は、今後の半導体用絶縁材料あるいはパッ
ケージ飼料として好適に使用できるような緻密質で且つ
熱伝導性、絶縁性、誘電率などの実用上の緒特性に優れ
ている窒化アルミニウム焼結体とその製造方法を提供す
ることにある。The object of the present invention is to produce sintered aluminum nitride that is dense and has excellent practical characteristics such as thermal conductivity, insulation, and dielectric constant, so that it can be suitably used as an insulating material for semiconductors or packaged feed in the future. The objective is to provide the body and its manufacturing method.
［問題点を解決するための手段］
上記目的を達成するための本発明の構成は、炭素を０，
１〜０．２重量％含有し、熱伝導率が１５０Ｗ／ｍｋ以
上である窒化アルミニウム焼結体である。特にＩＩａ族
およびＩＩｒａ族金属の何れがを酸化物換算で０．０１
〜１０重量％、酸素を０．００１〜１．０重量％含有す
るものは熱伝導率が１８０Ｗ／ｍｋ以上である。[Means for solving the problems] The structure of the present invention for achieving the above object is to reduce carbon to 0,
It is an aluminum nitride sintered body containing 1 to 0.2% by weight and having a thermal conductivity of 150 W/mk or more. In particular, which of Group IIa and Group IIra metals is 0.01 in terms of oxide
-10% by weight, and those containing 0.001 to 1.0% by weight of oxygen have a thermal conductivity of 180 W/mk or more.
このような窒素アルミニウム焼結体の製造法は、ＩＩａ
族および■ａ族金属の何れがの脂肪酸塩を酸化物換算で
０．０１〜１．０重量％混合した後成形し、非酸化性雰
囲気中、１５００〜２２００ ℃で焼結するものである
。The method for producing such a nitrogen aluminum sintered body is IIa
After mixing 0.01 to 1.0% by weight of fatty acid salts of group metals and group IIa metals in terms of oxides, the mixture is molded and sintered at 1500 to 2200°C in a non-oxidizing atmosphere.
本発明の焼結体においては、炭素の含有量が０．００１
〜０．２重足％とする。 ０．００１重量％未満では、
熱伝導率か低くなるし、０．２重量％を越えると、焼結
体の緻密化か不十分である。炭素の残留のために窒化ア
ルミニウム成形体には、炭素源となる物質を含有せしめ
る必要がある。In the sintered body of the present invention, the carbon content is 0.001
~0.2%. Less than 0.001% by weight,
Thermal conductivity decreases, and if it exceeds 0.2% by weight, the sintered body will not be sufficiently densified. In order to retain carbon, the aluminum nitride molded body must contain a substance that serves as a carbon source.
炭素の供給源としては成形助剤、添加炭素、雰囲気から
の侵入炭素、焼結助剤として与えることか可能である。Carbon can be supplied as a forming aid, added carbon, carbon introduced from the atmosphere, or a sintering aid.
発明者らは炭素源として、焼結助剤となるＵａ、■ａ族
元索の脂肪酸化合物を用いることが特に好ましい結果を
得ることを見出した。The inventors have found that particularly favorable results can be obtained by using, as a carbon source, a fatty acid compound of group Ua, which serves as a sintering aid.
炭素の効果は明らかではないが、ＡＩＮ中の酸素量を低
減させるに効果的なものと考えられる。Although the effect of carbon is not clear, it is thought to be effective in reducing the amount of oxygen in AIN.
Ｕａ、ｍａ族元素は酸化物換算で０．０１〜１．０重量
％とする０、０１重量％未満では緻密化が不十分であり
、１０重量％を越えると熱伝導率が低下する。焼結体中
の酸素量はｏ、ｏｏｉ〜１，０重量％である。 １．０
重量％を越えると熱伝導率が低く、０．０口重量％未満
に制御することは困難である。The Ua and Ma group elements should be 0.01 to 1.0% by weight in terms of oxide. If it is less than 0.01% by weight, densification will be insufficient, and if it exceeds 10% by weight, the thermal conductivity will decrease. The amount of oxygen in the sintered body is from o,ooi to 1.0% by weight. 1.0
If it exceeds 0.0% by weight, the thermal conductivity is low and it is difficult to control it to less than 0.0% by weight.
焼結助剤としてのｎａ、Ｈａ族元素は、酸化物をはじめ
、水酸化物、炭酸塩等を用いることができるか、特に脂
肪酸塩か好ましく、発明者らはステアリン酸、パルミチ
ン酸等種々の脂肪酸塩を用いて良好な結果を得た。焼結
体の製法は常法の窒化アルミニウムの製法に準すること
か可能である。As the Na and Ha group elements as sintering aids, oxides, hydroxides, carbonates, etc. can be used, and fatty acid salts are particularly preferable. Good results were obtained using fatty acid salts. The method for manufacturing the sintered body can be based on the conventional method for manufacturing aluminum nitride.
［実施例］ 以下、実施例によって、本発明を具体的に説明する。[Example] Hereinafter, the present invention will be specifically explained with reference to Examples.
実施例１
平均粒径か１．０μ以下で酸素含量が１．０重量パーセ
ントの高純度ＡＩＮ粉末（比表面積２ｍ’／ｇ）に、酸
化物換算で表１に示す配合量のＩＩａ。Example 1 High purity AIN powder (specific surface area 2 m'/g) with an average particle size of 1.0 μm or less and an oxygen content of 1.0 weight percent was mixed with IIa in the amount shown in Table 1 in terms of oxide.
ｍａ族ステアリン酸化合物と ５重量％のＰＶＢを添加
し、エタノール中で１０時間ボールミルで混合後、成形
し、１９００℃の窒素気流中で２時間焼結した。A MA group stearic acid compound and 5% by weight of PVB were added and mixed in ethanol in a ball mill for 10 hours, then molded and sintered in a nitrogen stream at 1900°C for 2 hours.
得られた焼結体の相対密度と熱伝導率、ＰＣＴによる重
量増加率（１２０℃、１００％ＲＨ。Relative density and thermal conductivity of the obtained sintered body, weight increase rate due to PCT (120°C, 100% RH.
１．００Ｈ）を下記第１表に示す。1.00H) are shown in Table 1 below.
この表に示す結果から本発明の窒化アルミニウム焼結体
の特性がすぐれていることが判る。From the results shown in this table, it can be seen that the aluminum nitride sintered body of the present invention has excellent characteristics.
実施例２
実施例１を示した第１表３の組成によりステアリン酸に
かわって、パルミチン酸を用いたところ、同様の効果が
確認された。Example 2 When palmitic acid was used in place of stearic acid according to the composition shown in Table 1 shown in Example 1, similar effects were confirmed.
表１
［発明の効果］
以上説明したように、本発明は高熱伝導で信頼性の高い
窒化アルミニウム焼結体であって、比較的容易に製造す
ることができる。そして、本発明の窒化アルミニウム焼
結体は、ＩＣ基板、放熱板、構造材料等に適した特性を
もち、実用性の高いものである。Table 1 [Effects of the Invention] As explained above, the present invention provides a highly reliable aluminum nitride sintered body with high thermal conductivity, and can be produced relatively easily. The aluminum nitride sintered body of the present invention has characteristics suitable for IC substrates, heat sinks, structural materials, etc., and is highly practical.
特許出願人 住友電気工業株式会社 代理人 弁理士 小 松 秀 岳Patent applicant: Sumitomo Electric Industries, Ltd. Agent Patent Attorney Hidetake Komatsu
Claims (3)
率が１５０Ｗ／ｍｋ以上であることを特徴とする窒化ア
ルミニウム焼結体。(1) An aluminum nitride sintered body containing 0.001 to 0.2% by weight of carbon and having a thermal conductivity of 150 W/mk or more.
で０．０１〜１．０重量％、酸素を０．００１〜１．０
重量％含有し、熱伝導率が１８０Ｗ／ｍｋ以上である特
許請求の範囲第（１）項記載の窒化アルミニウム焼結体
。(2) 0.01 to 1.0% by weight of either Group IIa or Group IIIa metals and 0.001 to 1.0% of oxygen in terms of oxide.
% by weight, and has a thermal conductivity of 180 W/mk or more.
金属の何れかの脂肪酸塩を前記金属の酸化物換算で０．
０１〜１．０重量％混合した後成形し、非酸化性雰囲気
中、１５００〜２２００℃で焼結することを特徴とする
窒化アルミニウム焼結体の製造方法。(3) Add 0.0% fatty acid salt of either group IIa or group IIIa metal to aluminum nitride powder in terms of oxide of the metal.
1. A method for producing an aluminum nitride sintered body, which comprises mixing 0.01 to 1.0% by weight, molding, and sintering at 1500 to 2200°C in a non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63002184A JPH01179765A (en) | 1988-01-08 | 1988-01-08 | Aluminum nitride sintered body and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63002184A JPH01179765A (en) | 1988-01-08 | 1988-01-08 | Aluminum nitride sintered body and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01179765A true JPH01179765A (en) | 1989-07-17 |
Family
ID=11522277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63002184A Pending JPH01179765A (en) | 1988-01-08 | 1988-01-08 | Aluminum nitride sintered body and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179765A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001047831A1 (en) * | 1999-12-28 | 2001-07-05 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact, and ceramic substrate for use in apparatus for manufacturing and inspecting semiconductor |
| US6719931B2 (en) | 2000-01-10 | 2004-04-13 | Basf Aktiengesellschaft | Low-viscosity, melamine-formaldehyde resin microcapsule dispersions with reduced formaldehyde content |
| US6900149B1 (en) | 1999-09-06 | 2005-05-31 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62246866A (en) * | 1986-04-15 | 1987-10-28 | 株式会社村田製作所 | Manufacture of aluminum nitride sintered body |
| JPS632860A (en) * | 1986-06-20 | 1988-01-07 | ティーディーケイ株式会社 | Aluminum nitride sintered body |
| JPS6317263A (en) * | 1986-07-10 | 1988-01-25 | 旭硝子株式会社 | Manufacture of aluminum nitride sintered body |
| JPS63182260A (en) * | 1987-01-20 | 1988-07-27 | 株式会社東芝 | High heat conductive aluminum nitride sintered body |
| JPS63270361A (en) * | 1987-04-28 | 1988-11-08 | Toshiba Corp | Sintered aluminum nitride of high thermal conductivity |
-
1988
- 1988-01-08 JP JP63002184A patent/JPH01179765A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62246866A (en) * | 1986-04-15 | 1987-10-28 | 株式会社村田製作所 | Manufacture of aluminum nitride sintered body |
| JPS632860A (en) * | 1986-06-20 | 1988-01-07 | ティーディーケイ株式会社 | Aluminum nitride sintered body |
| JPS6317263A (en) * | 1986-07-10 | 1988-01-25 | 旭硝子株式会社 | Manufacture of aluminum nitride sintered body |
| JPS63182260A (en) * | 1987-01-20 | 1988-07-27 | 株式会社東芝 | High heat conductive aluminum nitride sintered body |
| JPS63270361A (en) * | 1987-04-28 | 1988-11-08 | Toshiba Corp | Sintered aluminum nitride of high thermal conductivity |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6900149B1 (en) | 1999-09-06 | 2005-05-31 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor |
| US6964812B2 (en) | 1999-09-06 | 2005-11-15 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor |
| US7015166B2 (en) | 1999-09-06 | 2006-03-21 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor |
| WO2001047831A1 (en) * | 1999-12-28 | 2001-07-05 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact, and ceramic substrate for use in apparatus for manufacturing and inspecting semiconductor |
| US6719931B2 (en) | 2000-01-10 | 2004-04-13 | Basf Aktiengesellschaft | Low-viscosity, melamine-formaldehyde resin microcapsule dispersions with reduced formaldehyde content |
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