JPH01164795A - Method for synthesizing diamond particles - Google Patents
Method for synthesizing diamond particlesInfo
- Publication number
- JPH01164795A JPH01164795A JP62320141A JP32014187A JPH01164795A JP H01164795 A JPH01164795 A JP H01164795A JP 62320141 A JP62320141 A JP 62320141A JP 32014187 A JP32014187 A JP 32014187A JP H01164795 A JPH01164795 A JP H01164795A
- Authority
- JP
- Japan
- Prior art keywords
- diamond particles
- plasma
- powder
- diamond
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 66
- 239000010432 diamond Substances 0.000 title claims abstract description 55
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 18
- 230000002194 synthesizing effect Effects 0.000 title description 2
- 239000000843 powder Substances 0.000 claims abstract description 24
- 239000012808 vapor phase Substances 0.000 claims abstract description 8
- 238000010891 electric arc Methods 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims 2
- 150000002430 hydrocarbons Chemical class 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000007771 core particle Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/0025—Combination of two or more reflectors for a single light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/0008—Reflectors for light sources providing for indirect lighting
- F21V7/0016—Reflectors for light sources providing for indirect lighting on lighting devices that also provide for direct lighting, e.g. by means of independent light sources, by splitting of the light beam, by switching between both lighting modes
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、熱プラズマシェラＩ・によりダイヤモンドを
気相合成する方法に関し、
粒径の均一なダイヤモンド粒子を簡単な装置で単純な工
程により連続的に高収率で安価に製造することを目的と
し、
プラズマトーチを用い、アーク放電により発生せしめた
熱プラズマをプラズマジェットとして噴出させ、これに
ダイヤモンド粒子を含むパウダーガスを噴射させて熱プ
ラズマを象、冷させることによりダイヤモンド粒子の表
面にダイヤモンドを気相成長させ、かつ反応ガスを分粒
器を含む循環系中を通して循環せしめることにより高い
収率で、粒径の均一なダイヤモンド粒子を気相成長させ
る。[Detailed Description of the Invention] [Summary] The present invention relates to a method for vapor-phase synthesis of diamond using a thermal plasma sheller I, which continuously synthesizes diamond particles with a uniform particle size through a simple process using a simple device. With the aim of manufacturing at low cost with high yield, a plasma torch is used to eject thermal plasma generated by arc discharge as a plasma jet. By doing this, diamond is grown in a vapor phase on the surface of the diamond particles, and by circulating the reaction gas through a circulation system including a particle sizer, diamond particles having a uniform particle size are grown in a vapor phase with a high yield.
本発明はダイヤモンド粒子の合成方法に関し、更に詳し
くは陰極及び陽極を有するＤＣブラスマトーチを用い、
ＤＣアーク放電により発生せしめた熱プラズマをプラズ
マジェットとして噴出させ、これにダイヤモンド粒子を
含むパウダーガスを噴射させて熱プラズマガスを象、冷
させることによりダイヤモンド粒子の表面に粒径のそろ
ったダイヤモンドを低価格で連続的に気相成長させる方
法に関する。The present invention relates to a method for synthesizing diamond particles, and more specifically, using a DC plasma torch having a cathode and an anode,
Thermal plasma generated by DC arc discharge is ejected as a plasma jet, and powder gas containing diamond particles is injected into the thermal plasma gas, which is then cooled to form diamonds with uniform particle sizes on the surface of the diamond particles. Concerning a method for continuous vapor phase growth at low cost.
ダイヤモンドは炭素（Ｃ）の同素体であり、所謂ダイヤ
モンド構造を示し、モース（Ｍｏｈｓ ）硬度１０とあ
らゆる物質の中で最も硬度の大きい材料であり、また熱
伝導度は１００ＯＷ ／ ｍｌ＋と他の材料より格段に
優れている。Diamond is an allotrope of carbon (C), exhibiting a so-called diamond structure, and is the hardest material among all substances, with a Mohs hardness of 10, and has a thermal conductivity of 100 OW/ml+, which is higher than other materials. It's extremely good.
また、同じ同素体で非晶質ではあるが透明で絶縁物であ
るダイヤモンド状炭素があり、このものはダイヤモンド
より劣るが高い熱伝導度と硬度を示している。Another allotrope, diamond-like carbon, is an amorphous but transparent insulator that exhibits higher thermal conductivity and hardness than diamond.
これらのことからダイアモンドは各種の用途が期待され
ており、例えば、硬度が大きいことを利用してダイヤモ
ンド砥粒は高硬度金属やファインセラミックスの加工用
として広く用いられており、これらの加工には必要不可
欠なものである。For these reasons, diamond is expected to have various uses.For example, due to its high hardness, diamond abrasive grains are widely used for processing high-hardness metals and fine ceramics. It is essential.
ダイヤモンド砥粒は、従来、高温高圧法や衝撃法で一般
に製造されていたが、これらの方法は、大型の設備が必
要で、しかもハツチ処理であり、更に反応生成物が金属
やグラファイトとの混合物であるため、ダイ−Ｘ・モン
ドの分離、さらには分粒の後工程が必要であり、工業的
製造方法としてはその製造工程及び価格の両面で充分な
ものではなかった。Diamond abrasive grains have traditionally been produced using high-temperature and high-pressure methods or impact methods, but these methods require large-scale equipment, require hatching, and produce reaction products that are mixed with metals and graphite. Therefore, a post-process of separation of Dai-X.Mondo and further sizing is required, and as an industrial manufacturing method, it is not sufficient in terms of both the manufacturing process and the cost.
前記したように、従来のダイヤモンド砥粒の製造方法は
製造工程及び価格の点で工業的な方法としては不充分な
ものであり、本発明はかかる問題を解決して粒径の均一
なダイヤモンド粒子を簡単な装置で単純な工程により連
続的に高収率で安価に製造することを目的とする。As mentioned above, the conventional method for manufacturing diamond abrasive grains is insufficient as an industrial method in terms of manufacturing process and cost, and the present invention solves these problems and produces diamond particles with a uniform particle size. The aim is to produce continuously with high yield and at low cost using simple equipment and simple steps.
前記目的は、本発明に従えば、プラズマトーチを用い、
アーク放電により発生せしめた熱プラズマをプラズマジ
ェットとして噴出させ、これにダイヤモンド粒子を含む
パウダーガスを噴射させて熱プラズマを急冷させること
によりダイヤモンド粒子の表面にダイヤモンドを気相成
長させ、かつ反応ガスを分粒器を含む循環系中を通して
循環せしめることにより高い収率で、粒径の均一なダイ
ヤモンド粒子を気相成長させることによって解決される
。According to the invention, said object is achieved by using a plasma torch,
Thermal plasma generated by arc discharge is ejected as a plasma jet, and powder gas containing diamond particles is injected into the plasma jet to rapidly cool the thermal plasma, thereby causing diamond to grow in a vapor phase on the surface of the diamond particles. The solution is to vapor phase grow diamond particles of uniform size with high yield by circulation through a circulation system including a particle sizer.
本発明は、我々が先に特願昭６２’−８３３１８（昭和
６２年４月３日出願）において提案した良質のダイヤモ
ンドを高速で合成できるプラズマジェットＣＶＤ装置を
使用したダイヤモンドの化学気相成長方法を用いて均一
な粒径を有するダイヤモンド粒子を単純な工程で安価に
合成するものである。The present invention is a diamond chemical vapor deposition method using a plasma jet CVD device that can synthesize high-quality diamonds at high speed, which we previously proposed in Japanese Patent Application No. 62'-83318 (filed on April 3, 1986). This method uses a simple process to synthesize diamond particles with a uniform particle size at low cost.
第１図は本発明に従ったダイヤモンド粒子の製造プロセ
スを示す概略図面であり、第１図において、１は陰極、
２は陽極、３はプラズマジェット、４はパウダーガス、
５は放電ガス配管、６はパウダーガス配管、７はチャン
バー、８はポンプ、９は分粒器、１０ば粉末補集器、１
１は分粒器、１２は水素ガス（Ｈ２）ボンへ、１３はメ
タンガス（ＣＩＬ）ボンへ、１４は流量計、１５はパウ
ダーフィーダー、１６はアーク電源である。FIG. 1 is a schematic drawing showing the manufacturing process of diamond particles according to the present invention, and in FIG. 1, 1 is a cathode;
2 is an anode, 3 is a plasma jet, 4 is a powder gas,
5 is a discharge gas pipe, 6 is a powder gas pipe, 7 is a chamber, 8 is a pump, 9 is a particle sizer, 10 is a powder collector, 1
1 is a particle sizer, 12 is a hydrogen gas (H2) bomb, 13 is a methane gas (CIL) bomb, 14 is a flow meter, 15 is a powder feeder, and 16 is an arc power source.
本発明においては、好ましくは陰極及び陽極を有するＤ
Ｃプラズマトーチを用いる熱プラズマＣＶＤ法によって
、陰極１と陽極２の間に放電ガスを流しながら電圧を印
加してＤＣアーク放電を起こさせ、５０００℃以上のア
ークプラズマを発生させる。In the present invention, D preferably has a cathode and an anode.
By a thermal plasma CVD method using a C plasma torch, DC arc discharge is caused by applying a voltage while flowing a discharge gas between the cathode 1 and the anode 2, thereby generating arc plasma at a temperature of 5000° C. or higher.
一方、陽極２に設けられている放電ガス配管５よりアー
クプラズマ発生部に供給された原料ガスは急速に高温度
にまで加熱されて活性化し、密度の高いラジカルを発生
し、また体積が膨張して超高速のプラズマジェット３と
なって噴射する。On the other hand, the raw material gas supplied to the arc plasma generating part from the discharge gas pipe 5 provided in the anode 2 is rapidly heated to a high temperature and activated, generating high-density radicals and expanding its volume. It becomes an ultra-high-speed plasma jet 3 and is ejected.
本発明では、例えば■−１２及びＣｌ１４混合ガスのア
ーク放電によって生じた温度５０００℃以上のプラズマ
トーチ１〜３にパウダーフィーダ１５を通して、核とな
る微粒子を含んだパウダーガス４を衝突させて急冷する
ことにより、核粒子表面にダイヤモンドがコーティング
される。この粒子を含む排ガスを循環させて繰り返しプ
ラズマジェットに衝突せしめることにより、ダイヤモン
ド粒子は成長していき、所望の大きさになったダイヤモ
ンド粒子は分粒器９で分粒され、粉末補集器１０に回収
される。In the present invention, for example, the powder feeder 15 is passed through the plasma torches 1 to 3 at a temperature of 5000° C. or more generated by arc discharge of a mixed gas of -12 and Cl14, and the powder gas 4 containing fine particles serving as a nucleus is collided with the plasma torches 1 to 3 to rapidly cool the gas. As a result, the surface of the core particle is coated with diamond. By circulating the exhaust gas containing these particles and repeatedly colliding with the plasma jet, the diamond particles grow. When the diamond particles reach a desired size, they are divided by the particle sizer 9 and the powder collector 10 will be collected.
更に分粒器１１では、粒子を含まない放電ガスを作る。Furthermore, the particle sizer 11 produces a discharge gas that does not contain particles.
この方法では原料ガス、反応生成物を循環させるため、
極めて高い収率でダイヤモンド粒子を連続的に合成でき
る。なお、ここで用いる分粒器９及び１１はともに、乾
式遠心分離型分粒器などを用いることができる。特に最
初の分粒器９ては循環する粒子のうち所望のサイズのダ
イヤモンドを捕集回収するために設けられたもので、例
えばサイクロトロン式分粒器を用いることができ、逆に
分粒器１１では微小サイズの粉末を除去するために、例
えばアキュカット式の分粒器と０．１ μｍ程度のフィ
ルターを組み合せたものを用いることができる。This method circulates the raw material gas and reaction products, so
Diamond particles can be synthesized continuously with extremely high yields. Note that both the particle sizers 9 and 11 used here may be dry centrifugal type particle sizers or the like. In particular, the first particle sizer 9 is provided to collect and recover diamonds of a desired size among the circulating particles, and for example, a cyclotron type particle sizer can be used; In order to remove micro-sized powder, for example, a combination of an AccuCut type granulator and a filter of about 0.1 μm can be used.
原料ガスは水素ガス（Ｈ２）を主とし、これに炭素源と
して、炭素化合物ガス、例えば、メタンガス（ＣＨ４）
を用いる。また、必要に応じて、放電を安定化させるた
めのヘリウム、アルゴン等の不活性ガスや、グラフアイ
１〜の発生をおさえるために水蒸気、更には酸素ガスや
過酸化水素ガス等の酸化性ガスを混合しても良い。The raw material gas is mainly hydrogen gas (H2), and a carbon compound gas such as methane gas (CH4) is added to this as a carbon source.
Use. In addition, if necessary, inert gas such as helium or argon to stabilize the discharge, water vapor to suppress the generation of graph eye 1~, and oxidizing gas such as oxygen gas or hydrogen peroxide gas. may be mixed.
核となる微粒子は、ダイヤモンドのほかに炭化硅素（Ｓ
ｉＣ） 、炭化タングステン（ＷＣ）、炭化チタン（Ｔ
ｉＣ） 、アルミナ（八１□０３）、モリフ゛デン（Ｍ
Ｏ）等ＤＣプラズマジェットＣＶＤ法によってダイヤモ
ンドコーティングができる物質なら何でも良い。In addition to diamond, the fine particles that serve as the core include silicon carbide (S).
iC), tungsten carbide (WC), titanium carbide (T
iC), alumina (81□03), molybdenum (M
Any material that can be coated with diamond by the DC plasma jet CVD method, such as O), may be used.
以下に本発明の詳細な説明するが、本発明の技術的範囲
をこれらの範囲に限定するものでないことばいうまでも
ない。The present invention will be described in detail below, but it goes without saying that the technical scope of the present invention is not limited to these ranges.
臭鞭健上
第１図に示したような循環系装置を用いてダイヤモンド
粒子を合成した。Diamond particles were synthesized using a circulatory system apparatus as shown in Figure 1.
即ち、２重量％Ｙ２Ｏ３添加タングステンを電極とした
プラズマトーチを用いた装置で、放電ガス流量２０１！
／ｍｉｎ、パウダーガス流ｆｆ１２０１／ｍｉｎ、メタ
ン（ＣＩ＋４）濃度２容積％アーク電流２ＯＡ、アーク
電圧１１０Ｖ、核粒子を平均粒径０．５μｍのダイヤモ
ンド粒子パウダーを供給量１ ｇ／ｈの条件で、回収ダ
イヤモンド粒の粒径を５０μｍとして、１０時間の連続
運転を行った。なお、分粒器９は前記したサイクロトロ
ン式の分粒器を用い、分粒器１１はアキュカッ１〜式〇
分粒器と０．１μｍのフィルターを組み合せたものを用
いた。That is, in an apparatus using a plasma torch with an electrode made of tungsten added with 2% Y2O3, the discharge gas flow rate is 201!
/min, powder gas flow ff1201/min, methane (CI+4) concentration 2% by volume, arc current 2OA, arc voltage 110V, and diamond particle powder with an average particle size of 0.5 μm as a core particle was supplied at a rate of 1 g/h. Continuous operation was performed for 10 hours with the particle size of the recovered diamond particles being 50 μm. The particle sizer 9 used was the above-mentioned cyclotron type particle sizer, and the particle sizer 11 used was a combination of an Accu-Kat 1 to type 0 particle sizer and a 0.1 μm filter.
その結果、約Ｌｏｇ／ｈｒのダイヤモンド粒子を得るこ
とができた。 ′
得られたダイヤモンド粒子の物性はＸ線回折、ラマン分
光で調べたとごろ、良質の立方晶ダイヤモンドが得られ
たことが確認され、また硬度は約５０μｍ径の粒子を金
属中に埋め込み、これをマイクロビッカース硬度計で調
べたところ、７０００〜１００００ ｋｇ／ｍｍ２てあ
った。As a result, diamond particles of about Log/hr could be obtained. ' The physical properties of the obtained diamond particles were examined by X-ray diffraction and Raman spectroscopy, and it was confirmed that high-quality cubic diamond was obtained. When examined using a micro Vickers hardness tester, the hardness was found to be 7,000 to 10,000 kg/mm2.
実施±１
ダイヤモンド粒子の代りにＳｉＣを核粒子として、また
原料ガスとしてメタノールを用いた以外は、実施例１と
同様にして、第１図の装置を用いてダイヤモンド粒子を
製造した。即ち、メタノール濃度４容積％、核粒子とし
て粒径１μｍのＳｉＣを４ｇ／ｈｒて供給して回収ダイ
ヤモンド径５０μｍで連続運転し、ダイヤモンド粒子を
約２０ｇ／ｈｒの速度で製造した。Implementation ±1 Diamond particles were produced using the apparatus shown in FIG. 1 in the same manner as in Example 1, except that SiC was used as a core particle instead of diamond particles and methanol was used as a raw material gas. That is, methanol concentration was 4% by volume, SiC having a particle size of 1 μm was supplied as a core particle at a rate of 4 g/hr, and diamond particles were produced at a rate of about 20 g/hr by continuous operation with a recovered diamond diameter of 50 μm.
本発明によれば単純な装置及び工程で、高圧を用いて安
価で連続的に高い収率でダイヤモンド粒子を合成するこ
とができるため、ダイヤモンド粒子のコストを大幅に低
減させることができる。According to the present invention, diamond particles can be synthesized inexpensively and continuously in a high yield using a simple device and process using high pressure, so that the cost of diamond particles can be significantly reduced.
第１図は、本発明に従ったダイヤモンド粒子の製造プロ
セスを示す概略図面であう４
１・・・陰ｈ、２・・・陽極、３・・・プラズマジェッ
ト、４・・・パウダーガス、訃−・放電ガス配管、６・
・・パウダーガス配管、７・・・ヂャンバー、８・・・
ポンプ、９・・・分粒器、１０・・・粉末捕集器、１１
・・・分粒器、１２・・・水素ガスボンベ、１３・・・
メタンガスボンベ、′１４・・・流量計、１５・・・パ
ウダーフィーダー１・・・陰極
２・・・陽極
３・・・プラズマジェット
４・・・パウダーガス
５・・・放電ガス配管
６・・・パウダーガス配管
７・・・チャンバー
８・ ポンプ
９・ ・分粒器
１０・・・粉末捕集器
１１・・・分粒器
１２・・・水素ガスボンベ
１３・・・メタンポンベ
１４・・・流量計
１５・・・パウダーフィーダ
］６・・・アーク電源FIG. 1 is a schematic drawing showing the manufacturing process of diamond particles according to the present invention.・Discharge gas piping, 6・
... Powder gas piping, 7... Chamber, 8...
Pump, 9... Particle sizer, 10... Powder collector, 11
...Particle sizer, 12...Hydrogen gas cylinder, 13...
Methane gas cylinder, '14...Flowmeter, 15...Powder feeder 1...Cathode 2...Anode 3...Plasma jet 4...Powder gas 5...Discharge gas piping 6... Powder gas piping 7...Chamber 8...Pump 9...Particle sizer 10...Powder collector 11...Particle sizer 12...Hydrogen gas cylinder 13...Methane pump 14...Flow meter 15 ... Powder feeder] 6... Arc power supply
Claims (1)
めた熱プラズマをプラズマジェットとして噴出させ、こ
れにダイヤモンド粒子を含むパウダーガスを噴射させて
熱プラズマを急冷させることによりダイヤモンド粒子の
表面にダイヤモンドを気相成長させ、かつ反応ガスを分
粒器を含む循環系中を通して循環せしめることにより高
い収率で、粒径の均一なダイヤモンド粒子を気相成長さ
せる方法。 ２、熱プラズマが水素及びガス状炭化水素を含むガスを
活性化したものである特許請求の範囲第１項に記載の方
法。 ３、水素及びガス状炭化水素を含むガスが更に不活性ガ
スを含む特許請求の範囲第２項記載の方法。 ４、熱プラズマの温度が５０００℃以上の温度である特
許請求の範囲第１項記載の方法。[Claims] 1. Using a plasma torch, the thermal plasma generated by arc discharge is ejected as a plasma jet, and a powder gas containing diamond particles is injected into the plasma jet to rapidly cool the thermal plasma. A method of growing diamond particles with a uniform particle size in a high yield in a vapor phase by growing diamond on the surface in a vapor phase and circulating a reaction gas through a circulation system that includes a particle sizer. 2. The method according to claim 1, wherein the thermal plasma is an activated gas containing hydrogen and gaseous hydrocarbons. 3. The method according to claim 2, wherein the gas containing hydrogen and gaseous hydrocarbon further contains an inert gas. 4. The method according to claim 1, wherein the temperature of the thermal plasma is 5000° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320141A JP2584805B2 (en) | 1987-12-19 | 1987-12-19 | Method for synthesizing diamond particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320141A JP2584805B2 (en) | 1987-12-19 | 1987-12-19 | Method for synthesizing diamond particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01164795A true JPH01164795A (en) | 1989-06-28 |
| JP2584805B2 JP2584805B2 (en) | 1997-02-26 |
Family
ID=18118166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62320141A Expired - Lifetime JP2584805B2 (en) | 1987-12-19 | 1987-12-19 | Method for synthesizing diamond particles |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584805B2 (en) |
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| WO1992005110A1 (en) * | 1990-09-24 | 1992-04-02 | The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy | Flame or plasma synthesis of diamond under turbulent and transition flow conditions |
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| Publication number | Publication date |
|---|---|
| JP2584805B2 (en) | 1997-02-26 |
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