JPH01147516A - Beam position controller - Google Patents
Beam position controllerInfo
- Publication number
- JPH01147516A JPH01147516A JP62305746A JP30574687A JPH01147516A JP H01147516 A JPH01147516 A JP H01147516A JP 62305746 A JP62305746 A JP 62305746A JP 30574687 A JP30574687 A JP 30574687A JP H01147516 A JPH01147516 A JP H01147516A
- Authority
- JP
- Japan
- Prior art keywords
- parallel plane
- plane plates
- control device
- parallel
- position control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lasers (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の分野]
本発明はレーザ等の平行ビームを光源とする装置におけ
るビーム位置の制゛御装置、特にレーザを光源とする半
導体露光装置等のビーム位置制御装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a beam position control device in an apparatus using a parallel beam as a light source such as a laser, and particularly relates to a beam position control device in a semiconductor exposure device or the like using a laser as a light source. .
[従来の技術]
レーザ等の平行ビームを光源とする半導体露光装置等の
精密光学装置において、光源にパルスレーザ等発熱、振
動するものを使用する際、平行ビームの直進性を利用し
て、光源と装置とを分離配置する場合がある。その際、
光源と装置との相対位置関係が振動、経時変化等の原因
で変化して装置へのビーム入射位置がずれることがあり
、パターン精度の低下等の問題があった。[Prior Art] In precision optical equipment such as semiconductor exposure equipment that uses a parallel beam such as a laser as a light source, when a pulsed laser or other such device that generates heat and vibrates as a light source, the straightness of the parallel beam is utilized to direct the light source. In some cases, the equipment and equipment may be arranged separately. that time,
The relative positional relationship between the light source and the device may change due to vibrations, changes over time, etc., and the position of the beam incident on the device may shift, resulting in problems such as a decrease in pattern accuracy.
この問題の解決のため、該平行ビーム中にミラーを配置
し、その角度を調節することによって、装置とビーム位
置との整合をとる装置が知られている。しかし、ミラー
の角度調節では、その角度の2倍ビームの角度が8動す
るので、特に光源と装置との距離が離れている場合等、
高精度の整合を行うことが困難である。To solve this problem, a device is known in which a mirror is placed in the parallel beam and the angle of the mirror is adjusted to align the device with the beam position. However, when adjusting the angle of the mirror, the angle of the beam moves twice that angle by 8, so it is difficult to adjust the angle, especially when the light source and the device are far apart.
It is difficult to perform highly accurate matching.
また、近年紫外線レーザの応用が各所で進められている
が、紫外域でのミラーの反射率は一般に低い、特に、紫
外線レーザの中でも最も応用が盛んなエキシマレーザの
ような高出力紫外線レーザでは、レーザによるダメージ
を考慮して、ミラーのコーティングを誘電体で構成する
が、そのような場合、反射率を98%以上にすることは
なかなか難しくまたコストも高くなる。従って、100
%から反射率を引いた残りは光量ロスになり、装置の効
率を下げる結果となってしまう。In addition, although the application of ultraviolet lasers has been progressing in various places in recent years, the reflectance of mirrors in the ultraviolet region is generally low.Especially, high-power ultraviolet lasers such as excimer lasers, which are most commonly applied among ultraviolet lasers, In consideration of damage caused by the laser, the mirror coating is made of a dielectric material, but in such a case, it is difficult to achieve a reflectance of 98% or more and the cost is also high. Therefore, 100
The remainder after subtracting the reflectance from the % becomes a loss of light quantity, resulting in a decrease in the efficiency of the device.
[発明の目的]
本発明は、前述のようにレーザを光源とする半導体露光
装置等で光源と装置との相対位置関係が変化しても装置
へのビーム入射位置がずれないように制御可能なビーム
位置制御装置の提供を目的とする。[Object of the Invention] As described above, the present invention is capable of controlling a semiconductor exposure apparatus or the like that uses a laser as a light source so that the position of beam incidence on the apparatus does not shift even if the relative positional relationship between the light source and the apparatus changes. The purpose is to provide a beam position control device.
[発明の構成および作用]
第1図は本発明の原理図である。平行ビーム1中に該ビ
ームに対し透過性の(例えば透明な)平行平面板2を該
ビームに対し垂直な軸(図示しない)廻りに矢印Aのよ
うに回転可能に設ける。平行平面板2の厚さをd1屈折
率をnとし、図のように角度θだけ傾けるとビーム1の
方向は変化せずにXだけ変位する。この変位量Xは
で表わされる。[Structure and operation of the invention] FIG. 1 is a diagram showing the principle of the invention. A parallel plane plate 2 which is transparent (for example transparent) to the parallel beam 1 is provided in the parallel beam 1 so as to be rotatable as shown by an arrow A around an axis (not shown) perpendicular to the beam. If the thickness of the parallel plane plate 2 is d1 and the refractive index is n, and if it is tilted by an angle θ as shown in the figure, the direction of the beam 1 will not change but will be displaced by X. This displacement amount X is expressed by .
例えばn=1.5 、d=10mmのとき、1分の傾き
でx w 1μmとなり、非常に分解能の高い位置制御
ができる。For example, when n=1.5 and d=10 mm, a tilt of 1 minute gives x w 1 μm, allowing extremely high resolution position control.
また、平行平面板2の両面に該ビーム波長に対する反射
防止膜を施すことにより、光量ロスも0.4%以下にお
さえることは容易である。Further, by applying an anti-reflection film for the beam wavelength on both sides of the parallel plane plate 2, it is easy to suppress the light amount loss to 0.4% or less.
[実施例]
本発明に係るビーム位置制御装置を、レーザ光源を用い
た投影式半導体露光装置に適用した実施例を第2図に示
す、3はレーザ光源で、該レーザビーム中に2枚の平行
平面板2−a、2−bが互いの回転軸20.21が直交
(ねじれ位置において)するように配置され、紙面の上
下方向および紙面に垂直方向にビームが変位できるよう
に構成されている。この2つの平行平面板はそれぞれ両
面とも該レーザ波長に対する反射防止膜が施されている
。レーザ耐力に優れた片面反射率0.2X以下の反射防
止膜は容易に得られる。従って平行平面板1枚当りの光
量ロスは0.4を以下である0回転軸20゜21はとも
にビームに対し垂直に配置されている。[Example] Fig. 2 shows an example in which the beam position control device according to the present invention is applied to a projection type semiconductor exposure apparatus using a laser light source. The parallel plane plates 2-a and 2-b are arranged so that their rotational axes 20.21 are perpendicular to each other (in the twisted position), and the beams are configured to be displaceable in the vertical direction of the plane of the paper and in the direction perpendicular to the plane of the paper. There is. Both surfaces of these two parallel plane plates are coated with an antireflection film for the laser wavelength. An antireflection film with a one-sided reflectance of 0.2X or less and excellent laser strength can be easily obtained. Therefore, the light amount loss per parallel plane plate is less than 0.4.The zero rotation axes 20.degree. 21 are both arranged perpendicular to the beam.
なお、回転軸20.21は模式的に平行平面板内に図示
しているが、これらの軸の位置は限定されず、ビームに
対し垂直でかつ相互に直交していればどの位置でもよい
、4は投影式半導体露光装置で、レーザ光源3からのビ
ームはフライアイレンズ9に入射し、ミラーlOで下方
に折り曲げられ、コンデンサレンズ11で、原画パター
ンの描かれたレチクル12を均一照射しその像を投影光
学系13によって、ステージ15上に搭載したウェハ1
4上に転写する。露光装置4を構成する各部材(9〜1
5)はすべて定盤1B上に搭載されでいる。振動等によ
りフライアイレンズ9に入射するレーザビームの位置が
ずれるとウェハ14面上の照度低下やひどい場合にはパ
ターンの焼付像の劣下を引き起こす、5は定盤16に固
定されたジャイロである。ジャイロ5で露光装置4の上
下左右の変位を検知する。この検知された変位量に基づ
いて、平行平面板2−a、2−bの傾けるべき角度をコ
ンピュータ6で計算し、不図示の一アクチュエータによ
って計算された量だけ平行平面板2−a、2−bを回転
軸20.21 廻りに回転させる。これにより露光装置
4に対するレーザビームのずれ量を補正するのに必要な
量だけ各平行平面板2−a、2−bを傾斜させフライア
イレンズ9に入るレーザビームの位置を常に一定に保つ
ことができる。Although the rotational axes 20 and 21 are schematically shown in the plane parallel plate, the positions of these axes are not limited, and may be at any position as long as they are perpendicular to the beam and orthogonal to each other. 4 is a projection type semiconductor exposure apparatus, in which a beam from a laser light source 3 enters a fly's eye lens 9, is bent downward by a mirror IO, and is uniformly irradiated by a condenser lens 11 onto a reticle 12 on which an original pattern is drawn. The image is projected onto the wafer 1 mounted on the stage 15 by the projection optical system 13.
Transfer onto 4. Each member (9 to 1) constituting the exposure device 4
5) are all mounted on surface plate 1B. If the position of the laser beam incident on the fly's eye lens 9 shifts due to vibration or the like, the illuminance on the wafer 14 surface will decrease, or in severe cases, the printed image of the pattern will deteriorate.5 is a gyro fixed to the surface plate 16. be. A gyro 5 detects vertical and horizontal displacements of the exposure device 4. Based on this detected amount of displacement, the computer 6 calculates the angle at which the parallel plane plates 2-a, 2-b should be tilted, and an actuator (not shown) moves the parallel plane plates 2-a, 2-b by the calculated amount. - Rotate b around the rotation axis 20.21. As a result, each parallel plane plate 2-a, 2-b is tilted by the amount necessary to correct the amount of deviation of the laser beam relative to the exposure device 4, and the position of the laser beam entering the fly-eye lens 9 is always kept constant. Can be done.
第3図は、露光装置4の変位を検知するのにジャイロ5
を使わずにビーム位置を直接モニタする方法を示す、7
はハーフミラ−でフライアイレンズ9へ向かうビームを
一部反射させて取出し光電式ポジションセンサ8に導く
、ハーフミラーフおよびセンサ8は露光装置4内に固定
させているので、ポジションセンナ8上のビーム位置の
情報をコンピュータへ送って、ビーム位置が変位しない
ように平行平面板2−a、2−bの傾き量を制御するこ
とができる。この方法は特にレーザが連続発振の場合に
有効である。FIG. 3 shows a gyro 5 used to detect the displacement of the exposure device 4.
7 shows how to directly monitor beam position without using
is a half mirror that partially reflects the beam heading toward the fly-eye lens 9 and takes it out and guides it to the photoelectric position sensor 8. Since the half mirror and sensor 8 are fixed in the exposure device 4, the beam on the position sensor 8 is By sending position information to a computer, the amount of inclination of the parallel plane plates 2-a and 2-b can be controlled so that the beam position does not shift. This method is particularly effective when the laser is continuous wave.
[発明の効果]
以上説明したように、本発明に係るビーム位置制御装置
においては、ビーム中に平行平面板を配置しこれを必要
量だけ傾けるという簡単な構成によりビームの方向を変
化させずに位置を補正することができる。従って、平行
ビームを発する光源とこのビームを使用する装置とを分
離して配置した場合に、振動等により装置に対する光源
の位置がずれた場合でもビームの照射位置を常に一定に
保つことができる。[Effects of the Invention] As explained above, the beam position control device according to the present invention has a simple configuration in which a parallel plane plate is placed in the beam and is tilted by the necessary amount, so that the beam position can be controlled without changing the direction of the beam. The position can be corrected. Therefore, when a light source that emits a parallel beam and a device that uses this beam are placed separately, the beam irradiation position can always be kept constant even if the position of the light source relative to the device is shifted due to vibration or the like.
また、光量のロスも最小限に抑えることができる。Furthermore, loss of light amount can also be minimized.
第1図は本発明の原理図、第2図は本発明の実施例の構
成図、第3図は本発明に係る位置変位センサの別の例の
説明図である。
1;ビーム、
2.2−a、2−b;平行平面板、
3;レーザ光源、4;露光装置、
20.21.30 、回転軸。FIG. 1 is a principle diagram of the present invention, FIG. 2 is a configuration diagram of an embodiment of the present invention, and FIG. 3 is an explanatory diagram of another example of the position displacement sensor according to the present invention. 1; Beam, 2.2-a, 2-b; Parallel plane plate, 3; Laser light source, 4; Exposure device, 20.21.30, Rotation axis.
Claims (8)
平面板を該ビームに対し垂直な軸廻りに回転可能に設け
たことを特徴とするビーム位置制御装置。(1) A beam position control device characterized in that a parallel plane plate transparent to the beam is provided in a substantially parallel beam so as to be rotatable around an axis perpendicular to the beam.
軸を相互に直交させたことを特徴とする特許請求の範囲
第1項記載のビーム位置制御装置。(2) The beam position control device according to claim 1, characterized in that the two parallel plane plates are provided, and the rotational axes of both parallel plane plates are orthogonal to each other.
ビームの相対位置を検知する位置変位センサを設け、該
位置変位センサの出力に応じて前記平行平板板の回転角
を制御するように構成したことを特徴とする特許請求の
範囲第1項または第2項記載のビーム位置制御装置。(3) A position displacement sensor is provided for detecting the relative position of the beam with respect to a beam using device that uses the beam, and the rotation angle of the parallel flat plate is controlled in accordance with the output of the position displacement sensor. A beam position control device according to claim 1 or 2, characterized in that:
とを特徴とする特許請求の範囲第3項記載のビーム位置
制御装置。(4) The beam position control device according to claim 3, wherein the position displacement sensor is a gyro sensor.
あることを特徴とする特許請求の範囲第3項記載のビー
ム位置制御装置。(5) The beam position control device according to claim 3, wherein the position displacement sensor is a photoelectric position sensor.
る特許請求の範囲第1項から第5項までのいずれか1項
記載のビーム位置制御装置。(6) The beam position control device according to any one of claims 1 to 5, wherein the parallel beam is a laser beam.
とする特許請求の範囲第6項記載のビーム位置制御装置
。(7) The beam position control device according to claim 6, wherein the laser light is an ultraviolet laser light.
とを特徴とする特許請求の範囲第7項記載のビーム位置
制御装置。(8) The beam position control device according to claim 7, wherein the ultraviolet laser light is an excimer laser light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62305746A JPH01147516A (en) | 1987-12-04 | 1987-12-04 | Beam position controller |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62305746A JPH01147516A (en) | 1987-12-04 | 1987-12-04 | Beam position controller |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01147516A true JPH01147516A (en) | 1989-06-09 |
Family
ID=17948842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62305746A Pending JPH01147516A (en) | 1987-12-04 | 1987-12-04 | Beam position controller |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01147516A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5731577A (en) * | 1995-04-21 | 1998-03-24 | Nikon Corporation | Illumination apparatus and projection exposure apparatus using the same |
WO2005010963A1 (en) * | 2003-07-24 | 2005-02-03 | Nikon Corporation | Illuminating optical system, exposure system and exposure method |
JP2010085434A (en) * | 2008-09-29 | 2010-04-15 | Sanyo Electric Co Ltd | Beam irradiation device and position sensing device |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
-
1987
- 1987-12-04 JP JP62305746A patent/JPH01147516A/en active Pending
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5731577A (en) * | 1995-04-21 | 1998-03-24 | Nikon Corporation | Illumination apparatus and projection exposure apparatus using the same |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9885959B2 (en) | 2003-04-09 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator |
WO2005010963A1 (en) * | 2003-07-24 | 2005-02-03 | Nikon Corporation | Illuminating optical system, exposure system and exposure method |
US9760014B2 (en) | 2003-10-28 | 2017-09-12 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US10281632B2 (en) | 2003-11-20 | 2019-05-07 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US10007194B2 (en) | 2004-02-06 | 2018-06-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10234770B2 (en) | 2004-02-06 | 2019-03-19 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10241417B2 (en) | 2004-02-06 | 2019-03-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9360763B2 (en) | 2005-05-12 | 2016-06-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9891539B2 (en) | 2005-05-12 | 2018-02-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9857599B2 (en) | 2007-10-24 | 2018-01-02 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
JP2010085434A (en) * | 2008-09-29 | 2010-04-15 | Sanyo Electric Co Ltd | Beam irradiation device and position sensing device |
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