JPH01123493A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH01123493A JPH01123493A JP28162887A JP28162887A JPH01123493A JP H01123493 A JPH01123493 A JP H01123493A JP 28162887 A JP28162887 A JP 28162887A JP 28162887 A JP28162887 A JP 28162887A JP H01123493 A JPH01123493 A JP H01123493A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser beam
- half mirror
- circuit board
- photo detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 9
- 239000011810 insulating material Substances 0.000 abstract description 6
- 230000000630 rising effect Effects 0.000 abstract description 2
- 241000270281 Coluber constrictor Species 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OQZCSNDVOWYALR-UHFFFAOYSA-N flurochloridone Chemical compound FC(F)(F)C1=CC=CC(N2C(C(Cl)C(CCl)C2)=O)=C1 OQZCSNDVOWYALR-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、出力用の半導体素子およびモニタ用の受光素
子を内蔵する半導体レーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser device incorporating a semiconductor element for output and a light receiving element for monitoring.
従来、この種の半導体レーザ装置は特開昭61−105
316号公報に開示され、第3図および第4図(a)、
(blに示すように構成されている。これを同図に基
づいて説明すると、同図において、符号1で示すものは
回路基板2上に設けられ出力ビーム用のガラス窓3およ
びモニタビーム用の反射面4を有するキャップ、5はこ
のキャップ1の内部に収納されかつ前記回路基板2の上
方に支持台(ヒートシンク)6を介して実装されレーザ
ビームa(出力ビーム)を放出する半導体レーザ素子、
7はこの半導体レーザ素子5の近傍に設けられかつ前記
回路基板2に接続されモニタビームbを受光する受光素
子、8はこの受光素子7と前記回路基板2上の電極回路
2aおよび前記半導体レーザ素子5と前記回路基板2上
の電極回路2bを接続するワイヤである。なお、前記キ
ャンプ1と前記回路基板2とは絶縁材(図示せず)によ
って電気絶縁されている。また、第4図(b)に示すワ
イヤ8は本来現れないものであるが分り易くするために
記載されており、以下においても同様の記載とする。Conventionally, this type of semiconductor laser device was disclosed in Japanese Patent Application Laid-Open No. 105-1983.
Disclosed in Japanese Patent No. 316, FIGS. 3 and 4(a),
(It is configured as shown in bl. This will be explained based on the same figure. In the same figure, the part indicated by reference numeral 1 is provided on the circuit board 2, and the glass window 3 for the output beam and the glass window 3 for the monitor beam are provided on the circuit board 2. a cap having a reflective surface 4; 5 is a semiconductor laser element housed inside the cap 1 and mounted above the circuit board 2 via a support base (heat sink) 6 and emitting a laser beam a (output beam);
Reference numeral 7 denotes a light-receiving element that is provided near the semiconductor laser element 5 and connected to the circuit board 2 to receive the monitor beam b; 8 represents the light-receiving element 7, the electrode circuit 2a on the circuit board 2, and the semiconductor laser element. 5 and the electrode circuit 2b on the circuit board 2. Note that the camp 1 and the circuit board 2 are electrically insulated by an insulating material (not shown). Further, although the wire 8 shown in FIG. 4(b) does not originally appear, it is described for ease of understanding, and the same description will be made below.
このように構成された半導体レーザ装置においては、半
導体レーザ素子5からレーザビームaとモニタビームb
が放出され、このうちモニタビームbは反射面4に入射
して受光素子7に受光される。また、レーザビームaは
ガラス窓3を透過して外部に照射される。In the semiconductor laser device configured in this way, a laser beam a and a monitor beam b are emitted from the semiconductor laser element 5.
The monitor beam b is incident on the reflecting surface 4 and is received by the light receiving element 7. Further, the laser beam a passes through the glass window 3 and is irradiated to the outside.
ところで、この種の半導体レーザ装置においては、キャ
ップ1と回路基板2との間に絶縁材(図示せず)を介装
し、また反射面4のみならずガラス窓3を必要とするも
のであるため、組立1作業を煩雑にし、コストが嵩むと
いう問題があった。Incidentally, in this type of semiconductor laser device, an insulating material (not shown) is interposed between the cap 1 and the circuit board 2, and not only a reflective surface 4 but also a glass window 3 is required. Therefore, there was a problem that the assembly work was complicated and the cost increased.
本発明はこのような事情に鑑みなされたもので、組立作
業の簡素化を図ることができ、もってコストの低廉化を
図ることができる半導体レーザ装置を提供するものであ
る。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a semiconductor laser device that can simplify assembly work and thereby reduce costs.
本発明に係る半導体レーザ装置は、半導体レーザ素子お
よび受光素子を透明モールド樹脂からなる絶縁体によっ
て封止し、この絶縁体の周壁一部を傾斜させ、この傾斜
部にレーザビームを外部に透過しかつ受光素子側に反射
するハーフミラ−を設けたものである。In the semiconductor laser device according to the present invention, a semiconductor laser element and a light receiving element are sealed with an insulator made of transparent molded resin, a part of the peripheral wall of this insulator is inclined, and a laser beam is transmitted to the outside through this inclined part. In addition, a half mirror for reflection is provided on the side of the light receiving element.
本発明においては、透明モールド樹脂からなる絶縁体に
よってガラス窓等の構成部品が不要になる。In the present invention, the insulator made of transparent molded resin eliminates the need for structural parts such as glass windows.
以下、本発明における構成等を図に示す実施例によって
詳細に説明する。第1図は本発明に係る半導体レーザ装
置を示す分解斜視図、第2図(a)および(b)は同じ
く半導体レーザ装置を示す透視平面図と断面図で、同図
において第3図および第4図と同一の部材については同
一の符号を付し、詳細な説明は省略する。同図において
、符号11で示すものは前記半導体レーザ素子5および
前記受光素子7を封止するレーザ部品保護用のパッケー
ジで、前記回路基板2上に設けられており、透明モール
ド樹脂からなる絶縁体によって構成されている。このパ
ッケージ11の周壁一部には前方から後方に向かって上
る勾配をもつ傾斜部12が設けられており、この傾斜部
12にはレーザビームaを外部に透過しかつその一部を
受光素子側に反射するハーフミラ−13が設けられてい
る。EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure. FIG. 1 is an exploded perspective view showing a semiconductor laser device according to the present invention, and FIGS. 2(a) and 2(b) are a perspective plan view and a sectional view showing the semiconductor laser device. The same members as in FIG. 4 are given the same reference numerals, and detailed explanations are omitted. In the figure, what is indicated by the reference numeral 11 is a laser component protection package that seals the semiconductor laser element 5 and the light receiving element 7, and is provided on the circuit board 2, and is made of an insulator made of transparent molded resin. It is made up of. A part of the peripheral wall of this package 11 is provided with an inclined part 12 having a slope rising from the front to the rear, and this inclined part 12 transmits the laser beam a to the outside and directs a part of it toward the light receiving element. A half mirror 13 is provided to reflect the light.
このように構成された半導体レーザ装置においては、半
導体レーザ素子5からレーザビームaが放出されると、
パッケージ11およびハーフミラ−13を透過して外部
に照射される。このとき、レー・ザビームaの一部がハ
ーフミラ−13で反射してモニタビームbとして受光素
子7に受光さ、れ、モニタ電流によってレーザビームa
の出力が制御される。In the semiconductor laser device configured in this way, when the laser beam a is emitted from the semiconductor laser element 5,
The light passes through the package 11 and the half mirror 13 and is irradiated to the outside. At this time, a part of the laser beam a is reflected by the half mirror 13 and is received by the light receiving element 7 as a monitor beam b, and the monitor current changes the laser beam a.
output is controlled.
したがって、本発明においては、従来必要とした絶縁材
(図示せず)およびガラス窓3等の構成部品が不要にな
り、半導体レーザ装置の組立作業を簡単に行うことがで
きる。Therefore, in the present invention, components such as an insulating material (not shown) and a glass window 3 that were conventionally required are not required, and the assembly work of the semiconductor laser device can be easily performed.
なお、本実施例においては、パッケージ11全体が回路
基板2上に設置するものを示したが、本発明はこれに限
定されるものではなく、パッケージ(図示せず)を回路
基板2の裏側に廻り込むように設置しても何等差し支え
ない。In this embodiment, the entire package 11 is installed on the circuit board 2, but the present invention is not limited to this, and the package (not shown) is installed on the back side of the circuit board 2. There is no problem in installing it so that it goes around.
また、本実施例においては、半導体レーザ素子5を支持
台6に直接設置する場合を示したが、本発明は熱応力を
緩和するためのサブマウントを使用してもよい。Further, in this embodiment, a case has been shown in which the semiconductor laser element 5 is directly installed on the support base 6, but the present invention may also use a submount for relieving thermal stress.
この他、本発明においてはパッケージll内にノイズ防
止用の回路等を設けることが望ましい。In addition, in the present invention, it is desirable to provide a noise prevention circuit or the like within the package 11.
以上説明したように本発明によれば、半導体レーザ素子
および受光素子を透明モールド樹脂からなる絶縁体によ
って封止し、この絶縁体の周壁−部を傾斜させ、この傾
斜部にレーザビームを外部に透過しかつ受光素子側に反
射するハーフミラ−を設けたので、従来必要とした絶縁
材およびガラス窓等の構成部品を不要にすることができ
る。したがって、半導体レーザ装置を組み立てる作業を
簡単に行うことができるから、組立コストの低廉化を確
実に図ることができる。As explained above, according to the present invention, a semiconductor laser element and a light receiving element are sealed with an insulator made of transparent molded resin, the peripheral wall of this insulator is inclined, and a laser beam is directed to the outside through this inclined part. Since a half mirror is provided that transmits light and reflects the light toward the light receiving element, components such as insulating materials and glass windows that are conventionally required can be eliminated. Therefore, since the work of assembling the semiconductor laser device can be easily performed, it is possible to reliably reduce the assembly cost.
第1図は本発明に係る半導体レーザ装置を示す分解斜視
図、第2図(a)および(b)は同じく半導体レーザ装
置を示す透視平面図と断面図、第3図は従来の半導体レ
ーザ装置を示す斜視図、第4図(alおよび(b)はそ
の透視平面図とb−b線断面図である。
2・・・・回路基板、5・・・・半導体レーザ素子、7
・・・・受光素子、11・・・・バフケージ、12・・
・・傾斜部、13・・・・ハーフ(ツー、a・・・・レ
ーザビーム、b・・・・モニタビーム。
代 理 人 大 岩 増 雄
第1図
7:受丸紮)
11:ハ0ツプー:/1゜
12;イi亀免斗部
13:ハー7ミラー
0 : レーサ゛°シ゛−ム
b:(=タ じ−ム
第2図FIG. 1 is an exploded perspective view showing a semiconductor laser device according to the present invention, FIGS. 2(a) and (b) are a perspective plan view and a sectional view also showing the semiconductor laser device, and FIG. 3 is a conventional semiconductor laser device. FIG. 4 (al and b) is a perspective plan view and a sectional view taken along line bb. 2...Circuit board, 5...Semiconductor laser element, 7
... Light receiving element, 11 ... Buff cage, 12 ...
... Inclined part, 13 ... half (two, a ... laser beam, b ... monitor beam. Agent Masuo Oiwa Figure 1 7: Ukemaru So) 11: Ha 0 Tsupu: /1゜12; II Tortoise part 13: Herr 7 mirror 0: Racer゛°symbol b: (=Tame Figure 2)
Claims (1)
ーザ素子と、この半導体レーザ素子の近傍に設けられか
つ前記回路基板に接続されモニタビームを受光する受光
素子とを備え、この受光素子および前記半導体レーザ素
子を透明モールド樹脂からなる絶縁体によって封止し、
この絶縁体の周壁一部を傾斜させ、この傾斜部にレーザ
ビームを外部に透過しかつ受光素子側に反射するハーフ
ミラーを設けたことを特徴とする半導体レーザ装置。A semiconductor laser element mounted on a circuit board and emitting a laser beam, and a light receiving element provided near the semiconductor laser element and connected to the circuit board to receive a monitor beam, the light receiving element and the semiconductor laser The element is sealed with an insulator made of transparent mold resin,
A semiconductor laser device characterized in that a part of the peripheral wall of the insulator is inclined, and a half mirror is provided on the inclined part to transmit a laser beam to the outside and reflect it toward a light receiving element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28162887A JPH01123493A (en) | 1987-11-06 | 1987-11-06 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28162887A JPH01123493A (en) | 1987-11-06 | 1987-11-06 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01123493A true JPH01123493A (en) | 1989-05-16 |
Family
ID=17641765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28162887A Pending JPH01123493A (en) | 1987-11-06 | 1987-11-06 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01123493A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548535A (en) * | 1991-08-19 | 1993-02-26 | Nec Corp | Same wavelength bidirectional transmission reception module |
JPH10190134A (en) * | 1996-08-06 | 1998-07-21 | Cutting Edge Optronics Inc | Laser diode array assembly and its operating method |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
JP2018182268A (en) * | 2017-04-21 | 2018-11-15 | 京セラ株式会社 | Package for mounting semiconductor laser element and semiconductor laser device |
US11990728B2 (en) | 2020-05-26 | 2024-05-21 | Nichia Corporation | Light emitting device |
-
1987
- 1987-11-06 JP JP28162887A patent/JPH01123493A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548535A (en) * | 1991-08-19 | 1993-02-26 | Nec Corp | Same wavelength bidirectional transmission reception module |
JPH10190134A (en) * | 1996-08-06 | 1998-07-21 | Cutting Edge Optronics Inc | Laser diode array assembly and its operating method |
JP2001203418A (en) * | 1996-08-06 | 2001-07-27 | Cutting Edge Optronics Inc | Laser diode array assembly and method for operating the same |
US6272164B1 (en) | 1996-08-06 | 2001-08-07 | Cutting Edge Optronics, Inc. | Smart laser diode array assembly |
US6385226B2 (en) | 1996-08-06 | 2002-05-07 | Trw Inc. | Smart laser diode array assembly |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
JP2018182268A (en) * | 2017-04-21 | 2018-11-15 | 京セラ株式会社 | Package for mounting semiconductor laser element and semiconductor laser device |
US11990728B2 (en) | 2020-05-26 | 2024-05-21 | Nichia Corporation | Light emitting device |
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