JPH01114035A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH01114035A JPH01114035A JP62270169A JP27016987A JPH01114035A JP H01114035 A JPH01114035 A JP H01114035A JP 62270169 A JP62270169 A JP 62270169A JP 27016987 A JP27016987 A JP 27016987A JP H01114035 A JPH01114035 A JP H01114035A
- Authority
- JP
- Japan
- Prior art keywords
- phase
- light source
- flux
- lens
- incoherent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005286 illumination Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 230000001427 coherent effect Effects 0.000 claims description 12
- 230000004907 flux Effects 0.000 abstract description 7
- 210000001747 pupil Anatomy 0.000 abstract description 6
- 230000001788 irregular Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体回路素子をウェーハ上に露光転写する露
光装置に係り、特にコヒーレント光源を照明系として用
いるに好適な露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure apparatus for exposing and transferring semiconductor circuit elements onto a wafer, and particularly to an exposure apparatus suitable for using a coherent light source as an illumination system.
従来の装置!は、コヒーレント光源としてエキシマレー
ザを用い、該レーザ光のインコヒーレント化のために偏
向器を用い投影レンズの瞳面上でレーザビームを二次元
的に走査させるようにしていた。この種の装置として関
連するものには、例えば、特表昭61−502507が
挙げられる。Conventional equipment! used an excimer laser as a coherent light source, and used a deflector to make the laser beam incoherent so as to scan the laser beam two-dimensionally on the pupil plane of the projection lens. Related devices of this type include, for example, Japanese Patent Publication No. 61-502507.
半導体集積回路素子等の製造においては、回路パターン
を光学的に露光転写するホトリソグラフィ技術が主に用
いられている。露光装置としては、プロキシミテイ方式
、投影露光方式、縮小投影露光方式がある。従来、これ
らの露光装置では、照明として水銀ランプの光を用いて
いた。これに対しより高い輝度を得るためレーザ光を用
いることが提案されている。さらに、ホトリソグラフィ
装置の解像力は、使用する光の波長に依存し短波長にな
れば高解、偉力化が図れる。この目的のためには、遠紫
外領域の波長を持つエキシマレーザを照明光源として用
いることが提案されている。しかし、レーザは高輝度で
はあるがその反面コヒーレント光であるので干渉性が強
くスペックルパターン等のランダムな干渉縞が発生する
欠点があった。2. Description of the Related Art In the manufacture of semiconductor integrated circuit devices and the like, photolithography technology, which optically exposes and transfers circuit patterns, is mainly used. Exposure apparatuses include a proximity method, a projection exposure method, and a reduction projection exposure method. Conventionally, these exposure apparatuses have used light from a mercury lamp as illumination. In contrast, it has been proposed to use laser light to obtain higher brightness. Furthermore, the resolving power of a photolithography apparatus depends on the wavelength of the light used, and the shorter the wavelength, the higher the resolution and power can be achieved. For this purpose, it has been proposed to use an excimer laser with a wavelength in the deep ultraviolet region as an illumination light source. However, although lasers have high brightness, they are coherent lights, so they have a drawback of strong interference and the generation of random interference fringes such as speckle patterns.
これに対して、上記従来技術では、投影光学系の瞳面上
でレーザビームを二次元状に走査し、時間約に位相のず
れた光で露光するようにしてインコヒーレント化を行な
っている。ところが、この従来方式では、瞳面上でレー
ザビームを二次元状に走査する際、瞳の全領域を走査し
なければインコヒーレント化できない、このためエキシ
マレーザのようなパルス状レーザでは、パルス数を多く
しなければならない。また、レーザ光束の強度分布のム
ラがそのままウェーハ上での照度ムラになる欠点がある
。さらに、照明光学系の中に光偏向器を入れるため装置
が大型化、高価になるという問題があった。On the other hand, in the above-mentioned conventional technology, the laser beam is scanned two-dimensionally on the pupil plane of the projection optical system, and the laser beam is exposed with light whose phase is shifted approximately in time to achieve incoherence. However, in this conventional method, when scanning the laser beam two-dimensionally on the pupil plane, it cannot be made incoherent unless the entire area of the pupil is scanned.For this reason, with a pulsed laser such as an excimer laser, the number of pulses is limited. must be increased. Furthermore, there is a drawback that unevenness in the intensity distribution of the laser beam directly causes unevenness in illuminance on the wafer. Furthermore, since the optical deflector is included in the illumination optical system, there is a problem that the apparatus becomes large and expensive.
本発明の目的は、レーザ等のコヒーレント光をインコヒ
ーレント化するために構成が簡単で照明ムラのない照明
光学装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an illumination optical device that has a simple configuration and is free from uneven illumination in order to convert coherent light such as a laser beam into incoherent light.
上記目的を達成するために、本発明では第1図に示すご
とくコヒーレント光源1と該コヒーレント光源から出る
光束を複数の2次光源を形成するインテグレータ4との
間に光束の微小領域に対して位相がランダムに変換され
る位相板3を設けた。In order to achieve the above object, the present invention, as shown in FIG. A phase plate 3 is provided in which the phase shifter is randomly converted.
位相板は、第2図に示すごとく複数の微小領域3−1.
3−2・・・・・・に区切られており、それぞれ任意の
場所で光の位相を変換させるように働く。As shown in FIG. 2, the phase plate includes a plurality of micro regions 3-1.
It is divided into 3-2..., and each works to convert the phase of light at an arbitrary location.
それによって、インテグレータに入射する光束は、位相
がランダムになっているのでインコヒーレント化される
。さらに、インテグレータを通るので、物体面または基
板面8で干渉が発生せず均一な照明光を得ることができ
る。As a result, the light flux incident on the integrator is made incoherent because its phase is random. Furthermore, since the light passes through the integrator, no interference occurs on the object surface or the substrate surface 8, and uniform illumination light can be obtained.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第1図は、本発明を縮小投影露光装置に適用したもので
ある。コヒーレントな光源1から出た光束はエクスパン
ダ2によって広げられ反射鏡10で反射された後、位相
板3を通りインコヒーレント化がなされる。位相板3に
は、第2図に示すごとく5〜50μm口ていどの微小な
領域に区分し光の位相を変換しない領域3−1と位相を
πだけ変換する領域3−2を作る。これらの領域はラン
ダムに配置しである6位相をπだけ変換するには、第3
図に示すように領域3−2の部分に屈折率n、厚さtの
薄膜を形成する。厚さtは使用する光の波長をλ、膜の
屈折率をnとすると、t、=o、5λ/ (n −1)
で表わすことができる0本実施例では、コヒーレント光
源としてエキシマレーザのうちのK r Fレーザ(波
長λ=248.4nm)を用い、また薄膜としては、5
iOz(屈折率n=1.46)を用いた。5iOz膜の
膜厚tは、上式から明らかなようにt=0.27μmが
必要となる。FIG. 1 shows the present invention applied to a reduction projection exposure apparatus. A light beam emitted from a coherent light source 1 is expanded by an expander 2 and reflected by a reflecting mirror 10, and then passes through a phase plate 3 and is made incoherent. As shown in FIG. 2, the phase plate 3 is divided into minute regions of 5 to 50 .mu.m, to form a region 3-1 in which the phase of light is not changed and a region 3-2 in which the phase is changed by π. These regions are randomly arranged, and in order to transform the 6 phases by π, the third
As shown in the figure, a thin film having a refractive index n and a thickness t is formed in the region 3-2. The thickness t is t, = o, 5λ/ (n -1), where λ is the wavelength of the light used and n is the refractive index of the film.
In this example, a K r F laser (wavelength λ = 248.4 nm) among excimer lasers is used as a coherent light source, and as a thin film, 5
iOz (refractive index n=1.46) was used. As is clear from the above equation, the thickness t of the 5iOz film is required to be 0.27 μm.
当該S i O,2膜はスパッタリング法等を用いれば
、ガラス基板上に容易に形成することができる。The S i O,2 film can be easily formed on a glass substrate by using a sputtering method or the like.
微小領域に区分けした位相変換膜は、石英ガラス基板3
′上に5ift膜を形成した後、リソグラフィ技術によ
って作成する。つまり、5ins膜上にレジストを塗布
し、微小領域のうち露光する部分と非露光部分とを選択
し露光を行なう。その後、レジストを現像し、5i02
のエツチングを行なえば、第3図に示す状態の位相板を
作ることができる。なお、本実施例では位相変換膜とし
て5iOzを用いたが、この他にも種々の薄膜が考えら
れる。また、薄膜を用いなくとも第4図に示すごとくガ
ラス基板の表面に段差を設けてもよい。The phase conversion film divided into minute regions is placed on a quartz glass substrate 3.
After a 5ift film is formed on the top of the film, a 5ift film is formed using lithography technology. That is, a resist is applied on the 5-ins film, and exposed parts and non-exposed parts of the minute area are selected and exposed. After that, develop the resist and 5i02
By performing this etching, a phase plate as shown in FIG. 3 can be produced. Although 5iOz was used as the phase conversion film in this embodiment, various other thin films may be used. Moreover, even if a thin film is not used, a step may be provided on the surface of the glass substrate as shown in FIG.
上記の位相板3を通過しインコヒーレント化した光束は
、複数個のロッドレンズから構成されるフライズアイレ
ンズ4に入射する。フライズアイレンズの出射側では、
入射した光束をロッドレンズの数に相当する2次光源が
形成される。該2次光源をコンデンサレンズ5で投影レ
ンズ7の瞳面上9に結像することによって、レティクル
6上では、均一な照明が行なえる。また、ウェーハ8上
でも露光領域の照明分布が均一となり、しかも、位相板
によるインコヒーレント化によってスペックルなどラン
ダムな干渉縞の発生がない。この結果、ウェーハ上には
非常に良好な状態でパターンを結像させることが可能と
なった。The light beam that has passed through the phase plate 3 and has been rendered incoherent enters a fly's eye lens 4 that is composed of a plurality of rod lenses. On the exit side of the fly's eye lens,
Secondary light sources whose number corresponds to the number of rod lenses are formed from the incident light flux. By focusing the secondary light source on the pupil plane 9 of the projection lens 7 using the condenser lens 5, uniform illumination can be achieved on the reticle 6. Furthermore, the illumination distribution in the exposure area on the wafer 8 is uniform, and furthermore, random interference fringes such as speckles do not occur due to the incoherence created by the phase plate. As a result, it became possible to image a pattern on the wafer in a very good condition.
本発明によれば、簡単な構成でコヒーレント光をインコ
ヒーレント化でき、しかも照明の均一化も容易に出来る
。従って、照明装置を小型化、安価にできる。この結果
、半導体集積回路素子の製造におけるホトリソグラフィ
装置にコヒーレント光でしかも高い輝度をもつレーザ光
を照明光として用いることが可能となり、しかもエキシ
マレーザ等を用いることによって露光波長の短波長化も
可能となるので、パターンの微細化、高スループツト化
に効果がある。According to the present invention, coherent light can be made incoherent with a simple configuration, and illumination can also be easily made uniform. Therefore, the lighting device can be made smaller and cheaper. As a result, it is now possible to use coherent and high-luminance laser light as illumination light in photolithography equipment used in the manufacture of semiconductor integrated circuit devices, and it is also possible to shorten the exposure wavelength by using excimer lasers, etc. Therefore, it is effective in making patterns finer and increasing throughput.
第1図は本発明の一実施例の概略図、第2図は本発明の
構成要素の一つである位相板の平面図、第3図、第4図
は位相板の縦断面図である。
1・・・コヒーレント光源、3・・・位相板、3−2・
・・位相変換部、4・・・インテグレータ、5・・・コ
ンデンサレンズ、6・・・レティクル、7・・・投影レ
ンズ、8・・・第 l 図FIG. 1 is a schematic diagram of an embodiment of the present invention, FIG. 2 is a plan view of a phase plate, which is one of the components of the present invention, and FIGS. 3 and 4 are longitudinal sectional views of the phase plate. . 1... Coherent light source, 3... Phase plate, 3-2.
...Phase converter, 4...Integrator, 5...Condenser lens, 6...Reticle, 7...Projection lens, 8...Figure l
Claims (1)
ヒーレント光源から射出される光束の通る光路に、該光
束の中で予め決められた複数の微小領域において通過す
る光の位相を変換させる部材を設けた照明装置を有する
ことを特徴とする露光装置。1. In an exposure apparatus that uses a coherent light source, an illumination device is provided with a member that converts the phase of the light passing through a plurality of predetermined minute regions in the light beam emitted from the coherent light source, in the optical path of the light beam emitted from the coherent light source. An exposure apparatus comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270169A JPH01114035A (en) | 1987-10-28 | 1987-10-28 | Aligner |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62270169A JPH01114035A (en) | 1987-10-28 | 1987-10-28 | Aligner |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01114035A true JPH01114035A (en) | 1989-05-02 |
Family
ID=17482493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62270169A Pending JPH01114035A (en) | 1987-10-28 | 1987-10-28 | Aligner |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01114035A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1172905A (en) * | 1997-06-27 | 1999-03-16 | Toshiba Corp | Photomask repair method, inspection method, inspection apparatus and photomask production |
JP2001060550A (en) * | 1999-06-30 | 2001-03-06 | Lambda Physik G Zur Herstellung Von Lasern Mbh | Method and device for reducing speckle of laser beam and lithography equipment |
JP2004110072A (en) * | 1997-06-27 | 2004-04-08 | Toshiba Corp | Photomask repairing method, inspection method, inspection device and photomask manufacturing method |
JP2004157548A (en) * | 1997-06-27 | 2004-06-03 | Toshiba Corp | Method for repairing photomask, inspection method, inspection apparatus, and method for manufacturing photomask |
JP2004534265A (en) * | 2001-06-25 | 2004-11-11 | シリコン・ライト・マシーンズ | Method, apparatus, and diffuser for reducing laser speckle |
US6934009B2 (en) | 2001-05-31 | 2005-08-23 | Canon Kabushiki Kaisha | Illumination apparatus, illumination-controlling method, exposure apparatus, device fabricating method |
US7649676B2 (en) | 2006-06-14 | 2010-01-19 | Asml Netherlands B.V. | System and method to form unpolarized light |
US7728954B2 (en) | 2006-06-06 | 2010-06-01 | Asml Netherlands B.V. | Reflective loop system producing incoherent radiation |
US7948606B2 (en) | 2006-04-13 | 2011-05-24 | Asml Netherlands B.V. | Moving beam with respect to diffractive optics in order to reduce interference patterns |
JP2012150036A (en) * | 2011-01-20 | 2012-08-09 | Nuflare Technology Inc | Illuminating device, pattern checkup device and method for illuminating light formation |
JP2017534902A (en) * | 2014-09-23 | 2017-11-24 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination optical unit for projection lithography and hollow waveguide components therefor |
-
1987
- 1987-10-28 JP JP62270169A patent/JPH01114035A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1172905A (en) * | 1997-06-27 | 1999-03-16 | Toshiba Corp | Photomask repair method, inspection method, inspection apparatus and photomask production |
JP2004110072A (en) * | 1997-06-27 | 2004-04-08 | Toshiba Corp | Photomask repairing method, inspection method, inspection device and photomask manufacturing method |
JP2004157548A (en) * | 1997-06-27 | 2004-06-03 | Toshiba Corp | Method for repairing photomask, inspection method, inspection apparatus, and method for manufacturing photomask |
JP2001060550A (en) * | 1999-06-30 | 2001-03-06 | Lambda Physik G Zur Herstellung Von Lasern Mbh | Method and device for reducing speckle of laser beam and lithography equipment |
US6934009B2 (en) | 2001-05-31 | 2005-08-23 | Canon Kabushiki Kaisha | Illumination apparatus, illumination-controlling method, exposure apparatus, device fabricating method |
JP2004534265A (en) * | 2001-06-25 | 2004-11-11 | シリコン・ライト・マシーンズ | Method, apparatus, and diffuser for reducing laser speckle |
US7948606B2 (en) | 2006-04-13 | 2011-05-24 | Asml Netherlands B.V. | Moving beam with respect to diffractive optics in order to reduce interference patterns |
US7728954B2 (en) | 2006-06-06 | 2010-06-01 | Asml Netherlands B.V. | Reflective loop system producing incoherent radiation |
US7649676B2 (en) | 2006-06-14 | 2010-01-19 | Asml Netherlands B.V. | System and method to form unpolarized light |
JP2012150036A (en) * | 2011-01-20 | 2012-08-09 | Nuflare Technology Inc | Illuminating device, pattern checkup device and method for illuminating light formation |
JP2017534902A (en) * | 2014-09-23 | 2017-11-24 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination optical unit for projection lithography and hollow waveguide components therefor |
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