JPH01100445A - Gas detector - Google Patents
Gas detectorInfo
- Publication number
- JPH01100445A JPH01100445A JP25754987A JP25754987A JPH01100445A JP H01100445 A JPH01100445 A JP H01100445A JP 25754987 A JP25754987 A JP 25754987A JP 25754987 A JP25754987 A JP 25754987A JP H01100445 A JPH01100445 A JP H01100445A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- heating resistor
- sensor
- resistor
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 56
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 23
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 229910001887 tin oxide Inorganic materials 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 58
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000001282 iso-butane Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は酸化すず系半導体をガス感応体とするガスセ
ンサ、特にそのガスセンサを加熱するための装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas sensor using a tin oxide semiconductor as a gas sensitive body, and particularly to a device for heating the gas sensor.
酸化すず系半導体をガス感応体とする従来のガスセンサ
を第１１図に示し、このガスセンサはアルミナ興のセン
サ基板１１の一方の面に電極１２ 、１３を跨いでガス
感応体としての酸化すず半導体１４が設けられ、センサ
基板１】の他方の面には第１２図に示すように白金厚膜
ヒータ１７が設けられている。この白金厚膜ヒータ１７
はこのようなガスセンサラ−般家庭用ガス漏れ警報器に
用いる場合、被検ガスとしてのイソブタン、メタンおよ
び水素をガス感応体により検知しガス漏れ警報器として
必要な出力を得るために常時３５０℃〜４５０℃に加熱
しておくためのものである。１５ 、１６ 、１８ 、
１９はそれぞれリード線である。FIG. 11 shows a conventional gas sensor using a tin oxide based semiconductor as a gas sensitive material.This gas sensor has a tin oxide semiconductor 14 as a gas sensitive material on one surface of a sensor substrate 11 made of Alumina Co., Ltd., spanning electrodes 12 and 13. A platinum thick film heater 17 is provided on the other surface of the sensor substrate 1, as shown in FIG. This platinum thick film heater 17
When such a gas sensor is used in a general household gas leak alarm, the gas sensor detects isobutane, methane, and hydrogen as the test gases, and the temperature is constantly kept at 350°C to obtain the necessary output as a gas leak alarm. This is for heating to 450°C. 15, 16, 18,
19 are lead wires.
前記白金厚膜ヒータ１７を３５０℃〜４５０℃に加熱す
るためにヒータに印加される電圧は数■（ボルト）から
十数■であり、ガス漏れ警報器の電源として一般家庭用
電源である交流１００ｖを用いる一場合には第１３図に
示すように降圧用変圧器を用いるつ第１３図において、
１は商用交流電源、２はガスセンサ、３は降圧用変圧器
、４は分圧抵抗器、５は警報ブザー等を作動させるため
に必要な出力Ｖ。The voltage applied to the platinum thick film heater 17 to heat it to 350° C. to 450° C. is from several volts to more than ten volts, and AC, which is a general household power source, is used as the power source for the gas leak alarm. In the case of using 100V, a step-down transformer is used as shown in Fig. 13. In Fig. 13,
1 is a commercial AC power supply, 2 is a gas sensor, 3 is a step-down transformer, 4 is a voltage dividing resistor, and 5 is an output V required to operate an alarm buzzer, etc.
を得るための負荷抵抗器である。降圧用変圧器３の二次
出力はガスセンサ２のリード線１ｓ 、 １９１ｅ 介
して第３図に示すようなステム３２ 、３３に接続され
、ガスセンサ２）ガス感応体はリード線１５ 、１６お
よびステムア、３５を介して交流電源１１に接続されて
いるう
〔発明が解決しようとする問題点〕
酸化すず系半導体をガス感応体とし、このガス感応体を
加熱する発熱抵抗体として白金厚膜ヒータを用いるガス
センサを一般家庭用ガス漏れ警報器に用いる場合には商
用交流電源を降圧する変圧器を必要とし、ガス漏れ警報
器の小形イし、軽量化。It is a load resistor to obtain . The secondary output of the step-down transformer 3 is connected to the stems 32 and 33 as shown in FIG. [Problem to be solved by the invention] A tin oxide based semiconductor is used as a gas sensitive body, and a platinum thick film heater is used as a heating resistor to heat the gas sensitive body. When using a gas sensor as a household gas leak alarm, a transformer is required to step down the commercial AC power supply, making the gas leak alarm smaller and lighter.
低価格化をはかることができないという欠点を有する。The disadvantage is that it is not possible to reduce the price.
このため降圧用変圧器を用いることな（交流１００ Ｖ
を直接印加できる発熱抵抗体材料とじて酸化ルテニウム
（ＲｕＯ２’）を主成分とする発熱抵抗体が注目されて
いる。しかしながら、この酸化ルテニウム系発熱抵抗体
は酸化すず系半導体をガス感応体とするガスセンサから
必要な出力を得るために３５０℃〜４５０℃のような高
温で長期間使用した場合、酸化ルテニウムの蒸発等によ
りその電気抵抗が増大して発熱体としての性能が劣化す
る欠点を有する。Therefore, it is not necessary to use a step-down transformer (AC 100 V).
A heating resistor whose main component is ruthenium oxide (RuO2') is attracting attention as a heating resistor material that can be directly applied with . However, when this ruthenium oxide heating resistor is used for a long period of time at high temperatures such as 350°C to 450°C in order to obtain the necessary output from a gas sensor that uses a tin oxide semiconductor as a gas sensor, ruthenium oxide evaporates. This has the disadvantage that its electrical resistance increases and its performance as a heating element deteriorates.
そこで本発明の目的は上述した従来装置の欠点を除去し
、降圧用変圧器を用いることなく商用電源を直接利用す
ることができかつ長期間使用することができるガス検出
装置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the drawbacks of the conventional devices described above, and to provide a gas detection device that can directly utilize commercial power without using a step-down transformer and can be used for a long period of time. .
この目的は本発明によれば、センサ基板の一方の面に酸
化すず系半導体からなるガス感応体を有し、前記センサ
基板の他方の面に発熱抵抗体を有するガス検出装置にお
いて、前記発熱抵抗体を、常時所定の温度に加熱される
第１の発熱抵抗体と被検ガスをこ反応して前記所定の温
度よりも高温に加熱される第２の発熱抵抗体とにより構
成することによって達成される。According to the present invention, this object is achieved by providing a gas detection device having a gas sensitive body made of a tin oxide semiconductor on one surface of a sensor substrate and a heat generating resistor on the other surface of the sensor substrate. This is achieved by constructing the body with a first heating resistor that is constantly heated to a predetermined temperature and a second heating resistor that is heated to a higher temperature than the predetermined temperature by reacting with the gas to be detected. be done.
第１の発熱抵抗体として酸化ルテニウムを主成分とする
発熱抵抗体を用い、第２の発熱抵抗体として酸化すずを
主成分とする発熱抵抗体を用いることにより、第１の発
熱抵抗体により常時は所定の温度で加熱し、被検ガスの
雰囲気中では被検ガスと反応して発熱抵抗体となる第２
の発熱抵抗体によりガス感応体の温度を高めてその出力
を増大させることにより、高温では劣化しやすい酸化ル
テニウムを発熱抵抗体材料として長期間使用することが
できる。By using a heating resistor mainly composed of ruthenium oxide as the first heating resistor and using a heating resistor mainly composed of tin oxide as the second heating resistor, the first heating resistor is constantly activated. is heated at a predetermined temperature, and in the atmosphere of the test gas, it reacts with the test gas and becomes a heat-generating resistor.
By raising the temperature of the gas sensitive body using the heat generating resistor and increasing its output, ruthenium oxide, which easily deteriorates at high temperatures, can be used for a long period of time as the heat generating resistor material.
第１図ないし第３図はそれぞれ本発明の一実施例を示し
、第１図ないし第３図において第１１図ないし第１２図
に示すものと同一のものには同一の符号を付して説明を
省略する。1 to 3 each show an embodiment of the present invention, and the same parts in FIGS. 1 to 3 as shown in FIGS. 11 to 12 are given the same reference numerals and explained. omitted.
第１図において従来装置と異なる点はセンサ基板１１の
他方の面に、電極２１．２２を跨いで第１の発熱抵抗体
としての酸化ルテニウム（ＲｕＯ２）を主成分とする発
熱抵抗体ｎと、第２の発熱抵抗体としての酸化すずを主
成分とする発熱抵抗体冴を並置し、電極２１．２２にそ
れぞれリード線部、２６を設けたものである。The difference from the conventional device in FIG. 1 is that on the other side of the sensor substrate 11, a heating resistor n whose main component is ruthenium oxide (RuO2) is provided as a first heating resistor, spanning the electrodes 21 and 22; Heat generating resistors mainly composed of tin oxide as a second heat generating resistor are arranged side by side, and lead wire portions 26 are provided on electrodes 21 and 22, respectively.
この実施例におけるセンサ基板１１の一方の面に設ける
酸化すず半導体１４からなるガス感応部とセンサ基板１
１の他方の面に設ける発熱抵抗体ｎ、２４はスクリーン
印刷法により次のようにして製造される。まずアルミナ
類のセンサ基板１１にそれぞｎの電極１２ 、１３ 、
２１ 、２２を形成するためにセンサ基板１１に白金ペ
ーストを塗布して焼成する。次に酸化ルテニウム系ペー
ストを電極２１．２２間に所定の形状に塗布し空気中に
おいて８５０℃で加分間焼成して酸化ルテニウム系発熱
抵抗体を得る。この酸化ルテニウム系発熱抵抗体はレー
ザトリミング法により所定の抵抗値にｙ４整する。この
酸化ルテニウム系発熱抵抗体の上にガラス系ペーストを
塗布して空気中で１５分間焼成し絶縁層を形成する。ガ
ス感応体と第２の発熱抵抗体としての酸化すず半導体は
、金属すずを硝酸で酸化することにより得た酸化すず粉
末にバインダーを混合してペースト状にし、これを所定
の形状に塗布して８００℃で加分間焼成したのち塩化パ
ラジウム水溶液を含浸させ空気中において６００℃で３
時間処理してガス感応体と発熱抵抗体を得る。In this embodiment, a gas sensing section made of a tin oxide semiconductor 14 provided on one surface of the sensor substrate 11 and the sensor substrate 1
The heating resistor n, 24 provided on the other surface of the substrate 1 is manufactured by screen printing as follows. First, n electrodes 12, 13,
In order to form 21 and 22, platinum paste is applied to the sensor substrate 11 and fired. Next, a ruthenium oxide paste is applied in a predetermined shape between the electrodes 21 and 22 and fired in air at 850° C. to obtain a ruthenium oxide heating resistor. This ruthenium oxide heating resistor is trimmed to a predetermined resistance value y4 by laser trimming. A glass paste is applied onto this ruthenium oxide heating resistor and baked in air for 15 minutes to form an insulating layer. The tin oxide semiconductor used as the gas sensitive element and the second heating resistor is made by mixing a binder with tin oxide powder obtained by oxidizing metal tin with nitric acid, making it into a paste, and applying this paste in a predetermined shape. After calcining at 800°C, impregnated with palladium chloride aqueous solution and heated at 600°C in air for 30 minutes.
A gas sensitive member and a heating resistor are obtained by time treatment.
このようにガス感応体と発熱抵抗体器、２４とを形成し
たセンサ素子は第３図に示すように、センサ基板１１上
に形成された各電極１２ 、１３ 、２１ 、２２にそ
れぞれリード線１５ 、１６ 、２５ 、２６をボンデ
ィングし、これらのリード線１５ 、１６ 、２５ 、
２６をベース３１に植設したステム３２〜３５に接続し
、そしてベース３１に不図示のステンレス製金網を被せ
ることによりガスセンサ加が構成される。As shown in FIG. 3, the sensor element in which the gas sensitive body and the heating resistor 24 are formed has a lead wire 15 connected to each electrode 12, 13, 21, 22 formed on the sensor substrate 11, respectively. , 16 , 25 , 26 and these lead wires 15 , 16 , 25 ,
26 is connected to stems 32 to 35 implanted in a base 31, and the base 31 is covered with a stainless wire mesh (not shown), thereby constructing a gas sensor.
第３図のように組豆てられたガスセンサ加は第４図に示
すように商用交流電源１１に接続されてガス漏れ警報器
として使用される。ｆ！４４図において第１３図に示し
た従来装置と同一のものには同一の符号を付して説明を
省略する。第４図において、ｌで再び商用交流電源を示
し、ガスセンサＩの酸化ルテニウムを主成分とする＃ｇ
１の発熱抵抗体および酸化すずを主成分とする第２の発
熱抵抗体が接続されるステム３２ 、３３が直接商用交
流電源１に接続されている。第４図に示す基本電気回路
において、酸化ルテニウムを主成分とする第１の発熱抵
抗体の抵抗値は２８にΩになるようにトリミングされ、
商用交流電源１は１００Ｖ、負荷抵抗器５の抵抗値は８
にΩ、分圧抵抗器４の抵抗値は６４にΩとして、その出
力特性を通常のガス注入法により実験した結果を第７図
に示す。第７図において縦軸は出力電圧（Ｖ）、横軸は
被検ガスとしてのイソブタン濃度（％）を示すつ前記実
験において、ガスセンサ加は清浄空気中では酸化ルテニ
ウムを主成分とする第１の発熱抵抗体により３００℃に
加熱されていたが、０．２％のイソブタン中では酸化す
ずを主成分とする第２の発熱抵抗体の抵抗値が小さくな
ってヒータとして作用しガスセンサ加は４５０℃に加熱
されていた。＠８図に比較例として従来の白金厚膜ヒー
タを用いたガスセンサによる出力特性図を示すように、
この実施例によるガスセンサ（９）は従来装置と同一の
出力特性が得られる。第９図には他の比較例として発熱
抵抗体として酸化ルテニウムを主成分とする発熱抵抗体
のみを用いた場合の出力特性図を示し、イ１に示すよう
な出力特性を得るためには発熱抵抗体の電力を大きくし
てガスセンサの温度を４５０℃に維持しておかねばなら
ずこの場合には酸化ルテニウムの熱的劣化が促進される
、（員に示す出力特性は酸化ルテニウムの熱的劣化が生
じないガスセンサを３００℃に加熱して維持しておいた
場合であり、この場合には十分な出力特性が得られない
。The gas sensor assembled as shown in FIG. 3 is connected to a commercial AC power source 11 as shown in FIG. 4 and used as a gas leak alarm. f! In FIG. 44, the same components as those in the conventional device shown in FIG. 13 are given the same reference numerals, and their explanation will be omitted. In Fig. 4, l again indicates the commercial AC power supply, and #g of gas sensor I whose main component is ruthenium oxide.
Stems 32 and 33 to which the first heating resistor and the second heating resistor whose main component is tin oxide are connected are directly connected to the commercial AC power supply 1. In the basic electric circuit shown in FIG. 4, the resistance value of the first heating resistor mainly composed of ruthenium oxide is trimmed to 28Ω,
The commercial AC power supply 1 is 100V, and the resistance value of the load resistor 5 is 8.
The resistance value of the voltage dividing resistor 4 was set to 64 Ω, and the output characteristics were tested using a conventional gas injection method. The results are shown in FIG. In Fig. 7, the vertical axis shows the output voltage (V), and the horizontal axis shows the concentration of isobutane as the test gas (%). The heating resistor was heated to 300°C, but in 0.2% isobutane, the resistance of the second heating resistor, whose main component is tin oxide, becomes small and acts as a heater, causing the gas sensor to reach 450°C. It was heated to. As shown in Figure 8, the output characteristic diagram of a gas sensor using a conventional platinum thick film heater is shown as a comparative example.
The gas sensor (9) according to this embodiment can obtain the same output characteristics as the conventional device. As another comparative example, Figure 9 shows an output characteristic diagram when only a heating resistor whose main component is ruthenium oxide is used as the heating resistor. The temperature of the gas sensor must be maintained at 450°C by increasing the power of the resistor; in this case, the thermal deterioration of ruthenium oxide is accelerated (the output characteristics shown in the figure indicate the thermal deterioration of ruthenium oxide). This is a case in which a gas sensor that does not generate is heated and maintained at 300° C., and in this case, sufficient output characteristics cannot be obtained.
第１０図はガスセンサにおける０、２％濃度のイソブタ
ンに対する出力の経時安定性を示したものであり、縦軸
は出力電圧、横軸は通電時間（日）である。FIG. 10 shows the stability over time of the output of the gas sensor for isobutane at concentrations of 0 and 2%, where the vertical axis represents the output voltage and the horizontal axis represents the energization time (days).
第１０図において、１／ｉ（ま本発明によるガスセンサ
、に）（ホ）は比較例として酸化ルテニウムを主成分と
する発熱抵抗体のみを用いに）は４５０℃に加熱維持し
、（ホ）は３００℃に加熱維持しておいたものである。In FIG. 10, 1/i (gas sensor according to the present invention, 2) (e) is a comparative example using only a heating resistor mainly composed of ruthenium oxide) is heated and maintained at 450°C, and (e) was heated and maintained at 300°C.
この図から明らかなように本発明によるガスセンサは長
期間安定した出力特性を維持することができる。As is clear from this figure, the gas sensor according to the present invention can maintain stable output characteristics for a long period of time.
第５図および第６図は本発明の他の実施例を示し、第１
図および第２図に示す実施例と異なる点は、第１の発熱
抵抗体器に重ねて第２の発熱抵抗体列を設けた点である
。勿論第１の発熱抵抗体器と第２の発熱抵抗体器との間
は絶縁されており、酸化すずを主成分とする第２の発熱
抵抗体列は被検ガスに反応し易（するために第１の発熱
抵抗体器の上部−に設けられている。この実施例におい
ても第１図および第２図に示す実施例と同様に十分な出
力特注と経時安定性を有する。FIGS. 5 and 6 show other embodiments of the invention;
The difference from the embodiment shown in the figures and FIG. 2 is that a second heating resistor array is provided overlapping the first heating resistor device. Of course, the first heating resistor and the second heating resistor are insulated, and the second heating resistor array, which is mainly composed of tin oxide, easily reacts with the gas to be detected. This embodiment also has sufficient output customization and stability over time, similar to the embodiments shown in FIGS. 1 and 2.
以上に説明したように本発明によれば、センサ基板の一
方の面に酸化すず系半導体からなるガス感応体を有し、
前記センサ基板の他方の面に発熱抵抗体を有するガス検
出装置において、前記発熱抵抗体を、常時所定温度に加
熱される第１の発熱抵抗体と被検ガスに反応して前記所
定温度よりも高温に加熱される第２の発熱抵抗体とによ
り構成することにより、一般家庭用商用′眠源を用いて
その電源電圧を直接ガスセンサに印加して加熱すること
ができ、そしてガスセンサから所要の出力を得ることが
できるとともに長期に安定したガスセンサを提供するこ
とができる。As explained above, according to the present invention, the sensor substrate has a gas sensitive body made of a tin oxide semiconductor on one side,
In the gas detection device having a heating resistor on the other surface of the sensor substrate, the heating resistor is heated to a first heating resistor which is constantly heated to a predetermined temperature, and the heating resistor is heated to a temperature lower than the predetermined temperature in response to the test gas. By constructing a second heating resistor that is heated to a high temperature, it is possible to directly apply the power supply voltage to the gas sensor using a general household commercial power source to heat it, and to obtain the required output from the gas sensor. In addition, it is possible to provide a gas sensor that is stable over a long period of time.
第１図ないし第４図はそれぞれ本発明の一実施例を示し
、第１図はセンサ素子の要部断面図、第２図は第１図の
Ｑ矢印方向からみた表面図、第３図はガスセンサの組豆
図、第４図はガス漏れ警報器の基本電気回路図、第５図
および第６図は本発明の異なる実施例の要部断面図およ
び要部表面図、第７図ないし第９図はそれぞれガスセン
サの出力特性を表わす出力・特性図、第１０図はガスセ
ンサの経時的出力特性を表わす特性図である。第１１図
ないし第１３図はそれぞれ従来装置を示し、第１１図お
よび第１２図はそれぞれガス感応部およびヒータを示す
表面図、第１３図は基本電気回路図である。
１１：センサ基板、１４：ガス感応体、２３：＆化ルテ
ニウムを主成分とする第１の発熱抵抗体、冴二酸化すず
を主成分とする第２の発熱抵抗体。
図
く
貿
月や 七
ギタ 巨1 to 4 each show an embodiment of the present invention, in which FIG. 1 is a cross-sectional view of a main part of a sensor element, FIG. 2 is a surface view seen from the direction of arrow Q in FIG. 1, and FIG. FIG. 4 is a basic electrical circuit diagram of a gas leak alarm; FIGS. 5 and 6 are sectional views and surface views of essential parts of different embodiments of the present invention; FIGS. FIG. 9 is an output/characteristic diagram showing the output characteristics of the gas sensor, and FIG. 10 is a characteristic diagram showing the output characteristics of the gas sensor over time. 11 to 13 each show a conventional device, FIGS. 11 and 12 are surface views showing a gas sensing section and a heater, respectively, and FIG. 13 is a basic electric circuit diagram. 11: sensor substrate, 14: gas sensitive body, 23: first heating resistor containing ruthenium chloride as a main component, second heating resistor containing tin dioxide as a main component. Tsukubogetsuya Seven guitars gigantic
Claims (1)
ガス感応体を有し、前記センサ基板の他方の面に発熱抵
抗体を有するガス検出装置において、前記発熱抵抗体は
、常時所定温度に加熱される第１の発熱抵抗体と被検ガ
スに反応して前記所定温度よりも高温に加熱される第２
の発熱抵抗体とからなることを特徴とするガス検出装置
。 ２）特許請求の範囲第１項記載のガス検出装置において
、第１の発熱抵抗体が酸化ルテニウムを主成分とする発
熱抵抗体であることを特徴とするガス検出装置。 ３）特許請求の範囲第１項記載のガス検出装置において
、第２の発熱抵抗体が酸化すずを主成分とする発熱抵抗
体であることを特徴とするガス検出装置。[Scope of Claims] 1) In a gas detection device having a gas sensitive body made of a tin oxide based semiconductor on one surface of a sensor substrate and a heating resistor on the other surface of the sensor substrate, the heating resistor The first heating resistor is always heated to a predetermined temperature, and the second heating resistor is heated to a higher temperature than the predetermined temperature in response to the test gas.
A gas detection device comprising: a heating resistor; 2) The gas detection device according to claim 1, wherein the first heating resistor is a heating resistor containing ruthenium oxide as a main component. 3) The gas detection device according to claim 1, wherein the second heat generating resistor is a heat generating resistor whose main component is tin oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25754987A JPH0656371B2 (en) | 1987-10-13 | 1987-10-13 | Gas detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25754987A JPH0656371B2 (en) | 1987-10-13 | 1987-10-13 | Gas detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100445A true JPH01100445A (en) | 1989-04-18 |
| JPH0656371B2 JPH0656371B2 (en) | 1994-07-27 |
Family
ID=17307826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25754987A Expired - Lifetime JPH0656371B2 (en) | 1987-10-13 | 1987-10-13 | Gas detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0656371B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5019885A (en) * | 1989-03-30 | 1991-05-28 | Ricoh Company, Ltd. | Gas detecting device |
| US5734809A (en) * | 1989-02-27 | 1998-03-31 | Ricoh Company, Ltd. | Controller for a photocopier providing the ability to transfer data to a replacement controller through communication channels used to control sections of the photocopier |
-
1987
- 1987-10-13 JP JP25754987A patent/JPH0656371B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734809A (en) * | 1989-02-27 | 1998-03-31 | Ricoh Company, Ltd. | Controller for a photocopier providing the ability to transfer data to a replacement controller through communication channels used to control sections of the photocopier |
| US5019885A (en) * | 1989-03-30 | 1991-05-28 | Ricoh Company, Ltd. | Gas detecting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0656371B2 (en) | 1994-07-27 |
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