JP7431532B2 - Drawing method and drawing device - Google Patents

Description

The technology disclosed in this specification relates to a drawing method and a drawing device.

When exposing a drawing pattern for forming a circuit or the like on a photosensitive material formed on the top surface of a substrate, light modulated according to data describing the drawing pattern (i.e., drawing light) is used without using a mask or the like. ) has been disclosed in the past (see, for example, Patent Document 1) an exposure apparatus (i.e., a drawing apparatus) that directly exposes a drawing pattern to a photosensitive material by scanning the photosensitive material on the upper surface of a substrate.

Japanese Patent Application Publication No. 2014-066954

With the miniaturization and higher functionality of semiconductor devices in recent years, further miniaturization of the pattern shape formed based on the drawing pattern drawn by the above-mentioned drawing apparatus is desired.

However, the miniaturization of the pattern shape is accompanied by a decrease in depth of focus (DOF), and there are also problems in that the manufacturing cost of the device for realizing the miniaturization also increases.

The technology disclosed in this specification has been developed in view of the problems described above, and is intended to realize miniaturization of the pattern shape to be formed while suppressing a decrease in depth of focus. The purpose is to provide technology.

A first aspect of the technology disclosed in the present specification includes a step of irradiating a photosensitive material disposed on an upper surface of a substrate with drawing light in a first drawing pattern; A step of irradiating the drawing light with a second drawing pattern having at least a part of the shift pattern, and after irradiating the drawing light with the first drawing pattern and the second drawing pattern, the photosensitive material is and a step of forming a first pattern shape on the upper surface of the substrate based on the developed photosensitive material, wherein the first shift pattern corresponds to the shape of the first drawing pattern. In an adjacent region, which is a unit pattern that partially overlaps a unit pattern and is shifted from the corresponding unit pattern, and is an area adjacent to a region in which the first pattern shape is formed, on the photosensitive material, irradiating the drawing light with a third drawing pattern, and irradiating the drawing light with a fourth drawing pattern having at least a portion of the second shift pattern on the photosensitive material in the adjacent region; a step of developing the photosensitive material after irradiation with the drawing light in the third drawing pattern and the fourth drawing pattern; and a step of developing the photosensitive material on the upper surface of the substrate based on the developed photosensitive material. the second shift pattern partially overlaps the corresponding unit pattern in the third drawing pattern, and the unit deviates from the corresponding unit pattern. It's a pattern.
A second aspect of the technology disclosed in the present specification is related to the first aspect, in which the unit pattern has a line shape, and the first shift pattern shifts from the corresponding unit pattern to the line shape. The unit pattern is shifted in a direction that intersects with the direction in which the unit pattern extends.

A third aspect of the technology disclosed herein is related to the first aspect, in which the unit pattern has a line shape, and the second shift pattern shifts from the corresponding unit pattern to the line shape. The unit pattern is shifted in a direction that intersects with the direction in which the unit pattern extends.

A fourth aspect of the technology disclosed herein is related to the first aspect, and in the adjacent region, at least a portion of the photosensitive material irradiated with the drawing light is removed after development.

A fifth aspect of the technology disclosed in the present specification is related to the fourth aspect, in which the photosensitive material in the adjacent region is exposed to the drawing light in the third drawing pattern and the fourth drawing pattern. If development is performed after irradiation with only one of the drawing lights in the third drawing pattern and the fourth drawing pattern, the drawing light in the third drawing pattern and the fourth drawing pattern If it is developed after irradiation with both drawing lights, it is removed after development.

A sixth aspect of the technology disclosed herein is related to the first aspect, and in the adjacent region, the photosensitive material irradiated with the drawing light remains after development.

A seventh aspect of the technology disclosed herein is related to the first aspect, in which the substrate is a glass substrate, and the material of the first pattern shape is copper.

An eighth aspect of the technology disclosed in this specification is related to the first aspect, and is performed without using a mask when exposing the first drawing pattern and the second drawing pattern.

A ninth aspect of the technology disclosed in the present specification includes an irradiation unit that irradiates drawing light onto a photosensitive material disposed on an upper surface of a substrate, and a control unit that controls the operation of the irradiation unit. , the control unit causes the irradiation unit to irradiate the photosensitive material with the drawing light in a first drawing pattern, and causes the irradiation unit to apply the first shift pattern to at least part of the photosensitive material. irradiating the drawing light and forming a first pattern shape on the upper surface of the substrate based on the developed photosensitive material; The unit pattern partially overlaps the corresponding unit pattern in the first drawing pattern and is shifted from the corresponding unit pattern, and the control unit is configured to form the first pattern shape on the irradiation unit. The photosensitive material is irradiated with the drawing light in a third drawing pattern in an adjacent area that is an area adjacent to the area, and the irradiation section is caused to apply a second shift to the photosensitive material in the adjacent area. The photosensitive material is irradiated with the drawing light in the fourth drawing pattern having a pattern at least in part, and after the irradiation with the drawing light in the third drawing pattern and the fourth drawing pattern, the photosensitive material is developed; A second pattern shape is formed on the upper surface of the substrate based on the developed photosensitive material, and the second shift pattern partially overlaps the corresponding unit pattern in the third drawing pattern, In addition, the unit pattern is shifted from the corresponding unit pattern.

According to the first to ninth aspects of the technology disclosed in the present specification, it is possible to realize miniaturization of the pattern shape to be formed while suppressing a decrease in depth of focus.

In addition, objects, features, aspects, and advantages related to the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below.

FIG. 1 is a side view schematically showing an example of the configuration of a drawing device according to an embodiment. 1 is a plan view schematically showing an example of the configuration of a drawing device according to an embodiment; FIG. FIG. 3 is a diagram showing an example of a hardware configuration of a control unit. 5 is a flowchart illustrating an example of the operation of the drawing device according to the embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a negative photosensitive material according to an embodiment. FIG. 3 is a plan view showing an example of a pattern shape formed by double irradiation processing. FIG. 3 is a plan view showing an example of a drawing pattern used in double irradiation processing. FIG. 3 is a plan view showing an example of a drawing pattern used in double irradiation processing. FIG. 3 is a plan view showing a state in the middle of formation of a pattern shape formed by double irradiation processing. FIG. 3 is a plan view showing an example of a drawing pattern used in double irradiation processing. FIG. 3 is a plan view showing an example of a drawing pattern used in double irradiation processing. FIG. 3 is a plan view showing an example of a pattern shape formed by double irradiation processing. FIG. 3 is a diagram showing an example of photosensitive characteristics of a positive photosensitive material. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment. FIG. 3 is a cross-sectional view of the upper part of the substrate for explaining a double irradiation process using a positive photosensitive material according to an embodiment.

Embodiments will be described below with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for technical explanation, but these are merely examples, and not all of them are necessarily essential features for the embodiments to be implemented.

Note that the drawings are shown schematically, and for convenience of explanation, structures are omitted or simplified as appropriate in the drawings. Further, the mutual relationship between the sizes and positions of the structures shown in different drawings is not necessarily described accurately and may be changed as appropriate. Further, even in drawings such as plan views that are not cross-sectional views, hatching may be added to facilitate understanding of the content of the embodiments.

In addition, in the following description, similar components are shown with the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

In addition, in the description below, when a component is described as "comprising," "includes," or "has," unless otherwise specified, it is an exclusive term that excludes the presence of other components. It's not an expression.

In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms may not be used to facilitate understanding of the content of the embodiments. They are used for convenience and are not limited to the order that can occur based on these ordinal numbers.

In addition, in the descriptions below, specific positions and directions such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back" are referred to. Even if terms with different meanings are used, these terms are used for convenience to make it easier to understand the content of the embodiments, and have no relation to the direction in which they are actually implemented. It's something you don't do.

In addition, in the explanations below, when it is stated as “…top surface” or “…bottom surface”, etc., in addition to the top surface of the target component itself, other It shall also include the state in which the constituent elements are formed. That is, for example, when it is described as "B provided on the upper surface of A", this does not preclude the presence of another component "C" between A and B.

<Embodiment>
Hereinafter, a drawing method and a drawing apparatus according to this embodiment will be explained.

<Configuration of drawing device>
FIG. 1 is a side view schematically showing an example of the configuration of a drawing apparatus according to the present embodiment. Further, FIG. 2 is a plan view schematically showing an example of the configuration of a drawing apparatus according to this embodiment.

As an example is shown in FIGS. 1 and 2, the drawing apparatus 1 uses data (CAD) that describes a drawing pattern on the upper surface of a substrate W on which a layer of photosensitive material such as a resist is formed, without using a mask or the like. This is a device that exposes (draws) a pattern shape (for example, a circuit pattern) by scanning a photosensitive material such as a resist on the upper surface of a substrate W with light (that is, drawing light) modulated according to data (data, etc.). .

Note that the substrate W to be processed includes, for example, a semiconductor substrate, a substrate for a liquid crystal display device, a substrate for a flat panel display (FPD) such as an organic EL (electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for an optical disk. These include magnetic disk substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like.

The shape of the substrate W is, for example, circular with a diameter of 300 mm or 450 mm, or square with a diameter of 600 mm x 600 mm, 510 mm x 510 mm, or 510 mm x 415 mm. Moreover, it is preferable that the thickness of the substrate W is 2 mm or less.

Further, the substrate W is made of a material such as silicon, glass, quartz, or resin, and a thin metal film may be formed on the surface of the substrate W by plating, sputtering, vapor deposition, or the like.

In the examples shown in FIGS. 1 and 2, the substrate W is a rectangular semiconductor substrate.

The drawing device 1 has a main body interior formed by attaching cover panels (not shown) to the ceiling and surrounding surfaces of a skeleton made up of a main body frame 101, and a main body exterior that is the outside of the main body frame 101. Various components are arranged.

The inside of the main body of the drawing device 1 is divided into a processing area 102 and a transfer area 103.

The processing area 102 mainly includes a stage 10 that holds the substrate W, a stage drive mechanism 20 that moves the stage 10, a stage position measurement unit 30 that measures the position of the stage 10, and a stage that irradiates the upper surface of the substrate W with light. Two optical units 40 are arranged, and an imaging section 50 is arranged to take an image of the alignment mark on the upper surface of the substrate W.

On the other hand, in the transfer area 103, a transport device 60 that carries the substrate W into and out of the processing area 102 and a pre-alignment section 70 are arranged.

The drawing device 1 also includes a control unit 80 that is electrically connected to each component included in the drawing device 1 and controls the operation of these components. The configuration of each component included in the drawing device 1 will be described below.

<Stage 10>
The stage 10 is a holding unit that has a flat plate-like outer shape and holds the substrate W on its upper surface in a horizontal position. A plurality of suction holes (not shown) are formed on the top surface of the stage 10, and by generating negative pressure (suction pressure) in the suction holes, the substrate W placed on the top surface of the stage 10 is fixed. and can be held.

<Stage drive mechanism 20>
The stage drive mechanism 20 is a mechanism that moves the stage 10 with respect to the base 105, and moves the stage 10 in the main scanning direction (Y-axis direction), sub-scanning direction (X-axis direction), and rotation direction (rotation around the Z-axis). direction (θ-axis direction)).

Specifically, the stage drive mechanism 20 includes a rotation mechanism 21 that rotates the stage 10, a support plate 22 that supports the stage 10 via the rotation mechanism 21, and a sub-scanning mechanism that moves the support plate 22 in the sub-scanning direction. 23. The stage drive mechanism 20 further includes a base plate 24 that supports the support plate 22 via a sub-scanning mechanism 23, and a main scanning mechanism 25 that moves the base plate 24 in the main scanning direction.

The rotation mechanism 21 rotates the stage 10 around a rotation axis A that passes through the center of the upper surface of the stage 10 (the surface on which the substrate W is placed) and is perpendicular to the surface. The rotation mechanism 21 includes, for example, a rotation shaft portion 211 whose upper end is fixed to the back side of the mounting surface and extends along a vertical axis, and a rotation shaft portion 211 provided at the lower end of the rotation shaft portion 211 to rotate the rotation shaft portion 211. The configuration may include a rotation drive unit 212 (for example, a rotation motor).

In such a configuration, the rotation driving section 212 rotates the rotation shaft section 211, so that the stage 10 rotates about the rotation axis A in a horizontal plane.

The sub-scanning mechanism 23 includes a linear motor 231 that includes a mover attached to the lower surface of the support plate 22 and a stator installed on the upper surface of the base plate 24 (see FIG. 2).

Further, a pair of guide members 232 extending in the sub-scanning direction is laid on the base plate 24, and between each guide member 232 and the support plate 22, the guide member 232 is inserted while sliding on the guide member 232. A movable ball bearing is installed along the That is, the support plate 22 is supported on the pair of guide members 232 via the ball bearings.

In such a configuration, when the linear motor 231 is operated, the support plate 22 is guided by the guide member 232 and moves smoothly along the sub-scanning direction.

The main scanning mechanism 25 has a linear motor 251 configured by a mover attached to the lower surface of the base plate 24 and a stator installed on the upper surface of the base 105 of the drawing device 1 (see FIG. 2). .

Further, a pair of guide members 252 extending in the main scanning direction are installed on the base 105, and an air bearing, for example, is installed between each guide member 252 and the base plate 24. Air is constantly supplied to the air bearing from utility equipment, and the base plate 24 is floated and supported on the guide member 252 by the air bearing in a non-contact manner.

In such a configuration, when the linear motor 251 is operated, the base plate 24 is guided by the guide member 252 and moves smoothly along the main scanning direction without friction.

<Stage position measurement unit 30>
The stage position measuring section 30 is a mechanism that measures the position of the stage 10. Specifically, the stage position measuring unit 30 emits a laser beam toward the stage 10 from outside the stage 10, receives the reflected light, and adjusts the position of the stage based on the interference between the reflected light and the emitted light. It is configured by an interferometric laser length measuring device that measures 10 positions (specifically, the Y position along the main scanning direction and the θ position along the rotation direction).

<Optical unit 40>
The optical unit 40 is a mechanism for drawing a pattern on the substrate W by irradiating the upper surface of the substrate W held on the upper surface of the stage 10 with drawing light.

As described above, the drawing device 1 includes two optical units 40. For example, one optical unit 40 is in charge of exposing the +X side half of the substrate W, and the other optical unit 40 is in charge of exposing the −X side half of the substrate W.

These two optical units 40 are attached to a support frame 107 constructed on a base 105 so as to straddle the stage 10 and the stage drive mechanism 20 in the sub-scanning direction (X-axis direction). ) are fixedly installed at intervals along the

Note that the distance between the two optical units 40 does not necessarily need to be fixed, and a mechanism that can change the position of one or both of the two optical units 40 may be provided to adjust the distance between the two. It may be adjustable. However, the number of optical units 40 to be mounted does not necessarily have to be two, and may be one, or three or more.

Both optical units 40 have the same configuration. That is, each optical unit 40 includes a light source section 401 disposed inside a box forming a top plate, and a head section 402 housed inside an attached box attached to the +Y side of the support frame 107. .

The light source section 401 mainly includes a laser drive section 41, a laser oscillator 42, and an illumination optical system 43. Further, the head section 402 mainly includes a spatial light modulation unit 44 and a projection optical system 45.

The laser oscillator 42 is driven by the laser drive section 41 and emits a laser beam from an output mirror (not shown). The illumination optical system 43 converts the light (spot beam) emitted from the laser oscillator 42 into linear light with a uniform intensity distribution (that is, a line beam whose beam cross section is band-shaped).

Light emitted from the laser oscillator 42 and further converted into a line beam by the illumination optical system 43 enters the head section 402 . Note that the light emitted from the laser oscillator 42 may be configured to be apertured before it enters the head section 402 to adjust the amount of light that enters the head section 402.

The light that has entered the head section 402 is spatially modulated according to the pattern data PD, and then is irradiated onto the substrate W. However, spatially modulating light means changing the spatial distribution (amplitude, phase, polarization, etc.) of light. Further, "pattern data PD" is data in which positional information on the substrate W to be irradiated with light is recorded in pixel units, for example, design data of a pattern generated using computer aided design (CAD). It is generated by rasterizing .

The pattern data PD is obtained, for example, by receiving it from an external terminal device connected via a network or by reading it from a recording medium, and is further stored in the storage device 84 of the control unit 80. (See Figure 3).

More specifically, the light incident on the head section 402 is incident on the spatial light modulation unit 44 at a predetermined angle via the mirror 46.

The spatial light modulation unit 44 spatially modulates incident light by electrical control, and reflects necessary light that contributes to drawing a pattern and unnecessary light that does not contribute to drawing a pattern in different directions. A modulator 441 is provided.

The spatial light modulator 441 is, for example, a diffraction grating type spatial modulator (for example, a grating light valve (GLV)) in which a fixed ribbon and a movable ribbon as modulation elements are arranged one-dimensionally. Trademark)) etc.

A diffraction grating type spatial modulator is a diffraction grating that can change the depth of the grating, and is manufactured using, for example, semiconductor device manufacturing technology.

An example of the configuration of the spatial light modulator 441 will be specifically described below. The spatial light modulator 441 has a configuration in which a plurality of modulation units are arranged one-dimensionally. The operation of each modulation unit is controlled by, for example, whether or not a voltage is applied, and the spatial light modulator 441 is a driver circuit that can independently apply a voltage to each of a plurality of modulation units. A unit (not shown) is provided. This allows the voltage of each modulation unit to be switched independently.

When the modulation unit is in the first voltage state (for example, a state where no voltage is applied), the surface of the modulation unit becomes, for example, a plane. When light enters a modulation unit with a flat surface, the incident light is specularly reflected without being diffracted. As a result, specularly reflected light (0th order diffracted light) is generated. This specularly reflected light is guided to the surface of the substrate W via a projection optical system 45, which will be described later, as necessary light to contribute to pattern drawing.

On the other hand, when the modulation unit is in the second voltage state (for example, a state where a voltage is applied), parallel grooves with a predetermined depth (maximum depth) are periodically formed on the surface of the modulation unit. One or more lines are formed in line with. When light enters the modulation unit in this state, the specularly reflected light (0th-order diffracted light) cancels out and disappears, and the diffracted light of other orders (±1st-order diffracted light, ±2nd-order diffracted light, and higher-order diffracted light) light) is generated. This diffracted light of orders other than the 0th order is blocked by the projection optical system 45, which will be described later, as unnecessary light that should not contribute to pattern drawing, and does not reach the substrate W.

In the following, a modulation unit in the first voltage state is also referred to as an "on state", and a modulation unit in the second voltage state is also referred to as an "off state".

The spatial light modulator 441 may further include a mechanism (emission rate adjustment section) that can individually adjust the output rate of each of the group of modulation units in the on state.

Here, the "emission rate" of a modulation unit refers to the ratio of the amount of output light to the amount of incident light (amount of output light/amount of incident light) in the modulation unit. However, the "outgoing light amount" here is the light amount of necessary light (that is, the light emitted in the direction to reach the substrate W), and here, it is the light amount of specularly reflected light (0th order diffracted light).

The output rate of the modulation unit is 100% if the surface of the modulation unit is flat. When a groove is formed on the surface of the modulation unit, the output rate decreases, and the deeper the groove becomes, the lower the output rate becomes. For each modulation unit, the output rate adjustment section sets the depth of the groove formed on the surface when the modulation unit is in the on state to be equal to or greater than zero and to the maximum groove depth described above (i.e., in the off state). This is the depth of the groove formed on the surface of the modulation unit in the on state, giving an output rate of 0%.) By adjusting the output rate of the modulation unit in the on state, the output rate can be adjusted from 0% to 100%. can be adjusted to any value.

The projection optical system 45 blocks unnecessary light among the light incident from the spatial light modulator 441, guides the necessary light to the upper surface of the substrate W, and forms an image of the necessary light on the upper surface of the substrate W. That is, the necessary light emitted from the spatial light modulator 441 travels in the -Z direction along the Z-axis, and the unnecessary light emitted from the spatial light modulator 441 travels along the axis slightly inclined in the ±X direction from the Z-axis. As the projection optical system 45 moves in the −Z direction along the projection optical system 45, for example, the projection optical system 45 includes a blocking plate with a through hole formed in the center so that only necessary light passes through, and this blocking plate blocks unnecessary light.

In addition to this shielding plate, the projection optical system 45 includes a plurality of lenses constituting a zoom section that widens (or narrows) the width of the necessary light, and an objective that forms an image of the necessary light on the upper surface of the substrate W at a predetermined magnification. The configuration may further include a lens.

When causing the optical unit 40 to perform a drawing operation, the control section 80 drives the laser drive section 41 to cause the laser oscillator 42 to emit light. The emitted light is converted into a line beam in the illumination optical system 43 and enters the spatial light modulator 441 of the spatial light modulation unit 44 via the mirror 46. However, the spatial light modulator 441 is arranged in such a position that the normal line of the reflecting surface of the plurality of modulation units is inclined with respect to the optical axis of the incident light that enters through the mirror 46.

As described above, in the spatial light modulator 441, a plurality of modulation units are arranged side by side along the sub-scanning direction (X-axis direction), and the incident light is modulated in the longitudinal direction of the linear beam cross section. The light is incident on a plurality of modulation units arranged in a line along the arrangement direction.

The control section 80 gives an instruction to the driver circuit unit based on the pattern data PD, and the driver circuit unit applies a voltage to a predetermined modulation unit according to the instruction.

As a result, drawing light having a band-shaped cross section is formed, including light that is spatially modulated individually in each modulation unit, and the drawing light is emitted toward the substrate W.

The light spatially modulated in one modulation unit becomes drawing light for one pixel, and the drawing light emitted from the spatial light modulator 441 becomes drawing light for multiple pixels along the sub-scanning direction.

The drawing light emitted from the spatial light modulator 441 enters the projection optical system 45. Then, in the projection optical system 45, unnecessary light of the incident light is blocked, and only the necessary light is guided to the upper surface of the substrate W, and an image is formed on the upper surface of the substrate W at a predetermined magnification.

Each optical unit 40 continues to intermittently irradiate drawing light for a plurality of pixels along the sub-scanning direction while moving relative to the substrate W along the main-scanning direction (Y-axis direction) (i.e. , continues to repeatedly project pulsed light onto the upper surface of the substrate W). Therefore, when the optical unit 40 traverses the substrate W along the main scanning direction, the optical unit 40 extends along the main scanning direction on the upper surface of the substrate W and has a width corresponding to a plurality of pixels (hereinafter referred to as The pattern group is drawn in one strip area having a width M (also referred to as "drawing width M").

After performing main scanning with irradiation of drawing light, the optical unit 40 moves relative to the substrate W by a predetermined distance along a sub-scanning direction (X-axis direction) orthogonal to the main scanning direction, and then performs main scanning with drawing light irradiation. (sub-scanning), and main scanning with drawing light irradiation is performed again. As a result, the pattern group is drawn next to the band-shaped area drawn in the previous main scan.

In this way, by repeatedly performing main scanning with irradiation of drawing light while sandwiching sub-scanning, a group of patterns is drawn over the entire drawing target area.

<Imaging unit 50>
The imaging unit 50 is fixed to the support frame 107 and images an alignment mark formed on the upper surface of the substrate W held on the stage 10. The imaging unit 50 includes, for example, a lens barrel, an objective lens, and a CCD image sensor configured by, for example, an area image sensor (two-dimensional image sensor).

Further, the imaging unit 50 is connected via a fiber or the like to an illumination unit 501 that supplies illumination light used for imaging. However, as this illumination light, a light source with a wavelength that does not expose the resist or the like on the upper surface of the substrate W is used.

Light emitted from the illumination unit 501 is guided to the lens barrel via a fiber or the like, and is guided to the upper surface of the substrate W via the lens barrel. The reflected light is then received by a CCD image sensor via an objective lens.

As a result, the imaging unit 50 acquires imaging data of the upper surface of the substrate W. The CCD image sensor acquires imaging data in response to instructions from the control unit 80 and transmits the acquired imaging data to the control unit 80. Note that the imaging unit 50 may further include an autofocus unit capable of autofocus.

<Transport device 60>
The transport device 60 is a device that transports the substrate W, and specifically, for example, moves two hands 61 and 61 for supporting the substrate W, and moves the hands 61 and 61 independently (advances and retreats). and a hand drive mechanism 62 for moving (moving and raising/lowering).

A cassette placement section 104 for placing a cassette C is arranged outside the main body of the drawing device 1 and adjacent to the transfer area 103. An unprocessed substrate W accommodated in the placed cassette C is taken out and carried into the processing area 102. At the same time, the transport device 60 carries out the processed substrate W from the processing area 102 and stores it in the cassette C. Note that the cassette C is transferred to and from the cassette mounting section 104 by an external transport device (not shown).

<Pre-alignment section 70>
The pre-alignment unit 70 (see FIG. 2) is a device that roughly corrects the rotational position of the substrate W. The pre-alignment unit 70 includes, for example, a rotatable mounting table and a notch (for example, a notch or an orientation flat) formed in a part of the outer periphery of the substrate W placed on the mounting table. It includes a sensor that detects the position and a rotation mechanism that rotates the mounting table. In this case, in the pre-alignment process in the pre-alignment section 70, first, a sensor detects the position of the notch of the substrate W placed on the mounting table, and then a rotation mechanism detects the position of the notch. This is done by rotating the mounting table so that it is in a predetermined position.

<Control unit 80>
The control unit 80 is electrically connected to each component of the drawing device 1, and controls the operation of each component of the drawing device 1 while performing various calculation processes.

FIG. 3 is a diagram showing an example of the hardware configuration of the control unit 80. As shown in FIG. As illustrated in FIG. 3, the control unit 80 includes, for example, a central processing unit (CPU) 81, a read only memory (ROM) 82, and a random access memory (ROM) 82. This is a typical computer in which a random access memory (RAM) 83, a storage device 84, and the like are interconnected via a bus line 85.

The ROM 82 stores basic programs and the like, and the RAM 83 is used as a work area when the CPU 81 performs predetermined processing.

The storage device 84 is configured by a flash memory or a nonvolatile storage device such as a hard disk device. A program P is stored in the storage device 84, and the CPU 81 as a main control unit performs arithmetic processing according to the procedures described in the program P, and is configured to realize various functions.

The program P is normally stored in advance in a memory such as the storage device 84 and used, but it may also be in the form (program product) recorded in a recording medium such as a CD-ROM, DVD-ROM, or an external flash memory. (or provided by downloading from an external server via a network) and may be additionally or alternatively stored in a memory such as the storage device 84. Note that some or all of the functions implemented in the control unit 80 may be implemented in hardware using a dedicated logic circuit or the like.

Furthermore, in the control section 80 , an input section 86 , a display section 87 , and a communication section 88 are also connected to the bus line 85 .

The input unit 86 is an input device composed of, for example, a keyboard and a mouse, and accepts various operations (operations such as inputting commands or various data) from an operator. Note that the input unit 86 may be configured with various switches, a touch panel, and the like.

The display unit 87 is a display device configured with a liquid crystal display device or a lamp, and displays various information under the control of the CPU 81.

The communication unit 88 has a data communication function of transmitting and receiving commands, data, etc. to and from an external device via a network.

<Operation of drawing device>
The entire flow of a series of processes performed on the substrate W in the drawing apparatus 1 will be described with reference to FIG. 4. Here, FIG. 4 is a flowchart showing an example of the operation of the drawing apparatus according to this embodiment. Further, a series of operations described below are performed under the control of the control unit 80.

Here, prior to the series of operations described below, the control unit 80 reads a recipe in which processing conditions are described from the storage device 84 or the like, and sets various parameters etc. according to the processing conditions specified in the recipe. Adjust.

In this case, the control unit 80 also reads out information stored in association with the processing conditions specified in the recipe (or the recipe number of the recipe) etc. from the database D stored in the storage device 84. be able to.

Then, the transport device 60 takes out the unprocessed substrate W from the cassette C placed on the cassette mounting section 104 and carries it into the drawing device 1 (step ST1).

Subsequently, the transport device 60 transports the loaded substrate W into the pre-alignment section 70 . Then, in the pre-alignment section 70, pre-alignment processing is performed on the substrate W (step ST2).

The pre-alignment process is performed, for example, by detecting the position of a cutout of the substrate W placed on a mounting table using a sensor, and rotating the mounting table so that the position of the cutout becomes a predetermined position. It will be done. As a result, the substrate W placed on the mounting table is roughly aligned with the predetermined rotational position.

Subsequently, the transport device 60 carries out the pre-aligned substrate W from the pre-alignment section 70, and further places the substrate W on the stage 10 (step ST3). Then, when the substrate W is placed on the upper surface of the stage 10, the stage 10 holds the substrate W while adsorbing it.

Once the substrate W is suctioned and held on the stage 10, a process of precisely aligning the substrate W (fine alignment process) is performed so that the substrate W is placed at an appropriate position (step ST4).

Specifically, first, the stage drive mechanism 20 moves the stage 10 to a position below the imaging section 50. Then, when the stage 10 is placed below the imaging section 50, the imaging section 50 images the alignment mark on the upper surface of the substrate W and acquires the imaged data.

Subsequently, the control unit 80 performs image analysis on the imaging data acquired by the imaging unit 50, and detects the position of the alignment mark based on the analysis result. Then, the control unit 80 calculates the amount of deviation of the substrate W from the proper position based on the detected position.

Once the amount of deviation is calculated, the stage drive mechanism 20 moves the stage 10 by the calculated amount of deviation. As a result, alignment is performed so that the substrate W is placed at an appropriate position.

After the substrate W is placed in the proper position, a pattern drawing process is subsequently performed (step ST5).

In the pattern drawing process, under the control of the control unit 80, the stage drive mechanism 20 moves the substrate W placed on the stage 10 relative to the two optical units 40, while moving the two optical units 40. This is carried out by irradiating spatially modulated light onto the upper surface of the substrate W from each of them.

Specifically, the stage drive mechanism 20 first moves the stage 10 located below the imaging unit 50 in the +Y direction along the main scanning direction (Y-axis direction), thereby moving the substrate W by 2. The two optical units 40 are moved relative to each other along the main scanning direction (main scanning).

When the main scanning is viewed from the substrate W, each optical unit 40 traverses the substrate W in the −Y direction along the main scanning direction.

While the main scanning is being performed, each optical unit 40 continues to intermittently irradiate the substrate W with drawing light that has been spatially modulated corresponding to the pattern data PD (that is, pulsed light is applied to the upper surface of the substrate W). continues to be projected repeatedly). That is, each optical unit 40 traverses the substrate W along the main scanning direction while continuing to intermittently irradiate drawing light including spatially modulated light for a plurality of pixels along the sub-scanning direction.

Therefore, when the optical unit 40 crosses the substrate W once along the main scanning direction, one strip-shaped area (extending along the main scanning direction and whose width along the sub-scanning direction corresponds to the drawing width M) A group of patterns will be drawn in the area). In this embodiment, since the two optical units 40 simultaneously traverse the substrate W along the main scanning direction, a group of patterns is drawn in each of the two band-shaped areas by one main scanning. .

When one main scan is completed, the stage drive mechanism 20 moves the stage 10 by a predetermined distance in the -X direction along the sub-scanning direction (X-axis direction). By doing so, the substrate W is moved relative to each optical unit 40 along the sub-scanning direction (sub-scanning).

When the sub-scanning is viewed from the substrate W, each optical unit 40 moves by a predetermined distance in the +X direction along the sub-scanning direction.

When the sub-scanning ends, the main scanning is performed again. That is, the stage drive mechanism 20 moves the substrate W relative to the two optical units 40 along the main scanning direction by moving the stage 10 in the -Y direction along the main scanning direction.

When the main scanning is viewed from the substrate W, each optical unit 40 moves in the +Y direction along the main scanning direction and traverses the strip area drawn in the previous main scanning on the substrate W. It turns out.

Here, each optical unit 40 traverses the substrate W along the main scanning direction while continuing to intermittently irradiate the substrate W with drawing light spatially modulated corresponding to the pattern data PD. . As a result, the pattern group is drawn in the band-shaped area adjacent to the band-shaped area drawn in the previous main scan.

Thereafter, the main scanning and sub-scanning are similarly performed repeatedly, and when the pattern is drawn over the entire region to be drawn, the drawing process ends.

Then, when the drawing process is completed, the transport device 60 carries out the processed substrate W (step ST6). This completes a series of processes for the substrate W.

<Double irradiation treatment>
In the following, double exposure processing will be described as a drawing process using the drawing apparatus according to this embodiment.

Here, the double irradiation process refers to a process in which a region that has been irradiated with light is irradiated with light again.

In the case of this embodiment, it is assumed that the second light irradiation is performed on the entire substrate W after the main scanning of the entire substrate W is completed. At the time when the main scanning is completed, the area for which the main scanning has been completed may be irradiated with light for a second time before performing the main scanning for the remaining areas.

In addition, the second light irradiation does not have to be carried out to completely coincide with the area where the main scanning has ended, and at least a part of the area where the second light irradiation is to be performed is where the main scanning has ended. It suffices if it overlaps with the area currently being used.

<Double irradiation treatment using negative photosensitive material>
First, a double irradiation process using a negative photosensitive material will be described with reference to FIGS. 5 to 17. Note that FIGS. 5 to 17 are cross-sectional views of the upper part of the substrate for explaining the double irradiation process using a negative photosensitive material in this embodiment.

First, as shown in an example in FIG. 5, a seed layer 600 is formed on the upper surface of a substrate W such as a glass substrate, and then a negative resist 601 is formed on the upper surface of the seed layer 600.

Here, the seed layer 600 is a layer used for plating a metal pattern made of Cu or the like, which will be described later. Further, the negative resist 601 is, for example, THB series (trade name) manufactured by JSR Corporation and has a thickness of 3 μm.

Next, as an example shown in FIG. 6, a part of the negative resist 601 is irradiated with spatially modulated light 1000. That is, the resist 601, which is a photosensitive material formed on the upper surface of the substrate W, is irradiated with drawing light according to a drawing pattern. In FIG. 6, the resist in the area irradiated with the light 1000 is shown as resist 601A.

Here, the width in which the resist 601A is formed is determined by the limit of the resolving power of the optical unit 40. In this embodiment, the resolving power of the optical unit 40 is expressed as 2/2 μm [L/S], and the width D1 of the resist 601A and the width D2 of the resist 601 are the minimum widths that can be formed by the optical unit 40. It is assumed that the diameter is 2 μm. Note that [L/S] means line, AND, and space, and indicates the width of a pattern shape to be formed and the width between pattern shapes.

In FIG. 6, the width D1 of the resist 601A and the width D2 of the resist 601 are both 2 μm, but these may be larger than 2 μm. D2 may have different widths.

Next, as shown in an example in FIG. 7, spatially modulated light 1000A is applied to a region spanning resist 601 and resist 601A (that is, a region shifted from the region irradiated with light 1000 in FIG. 6). irradiate. That is, the resist 601 and the resist 601A, which are photosensitive materials formed on the upper surface of the substrate W, are irradiated with drawing light that follows a drawing pattern that is at least partially deviated from the drawing pattern in FIG. In FIG. 7, among the regions irradiated with the light 1000A, the resist in the region not irradiated with the light 1000 in FIG. and the area irradiated with the light 1000A) is shown as a resist 601B.

In addition, in FIG. 7, similarly to the case in FIG. 6, the resolving power of the optical unit 40 is expressed in 2/2 μm [L/S]. Further, it is assumed that the region irradiated with the light 1000A is a region shifted by 1 μm from the region irradiated with the light 1000.

In this case, the width D3 of the resist 601B is 1 μm because it corresponds to the width of the region where the region irradiated with the light 1000 and the region irradiated with the light 1000A overlap.

Further, since the region irradiated with the light 1000A is shifted by 1 μm from the region irradiated with the light 1000, the width D4 of the resist 601 is 1 μm narrower than the width D2 of the resist 601 in FIG. 6 by 1 μm.

Note that the deviation width between the area irradiated with the light 1000A and the area irradiated with the light 1000 is not limited to 1 μm shown in FIG. It can be changed within the range where there is an area where the irradiated area overlaps with the irradiated area. That is, in the case of this embodiment, the deviation width between the area irradiated with the light 1000A and the area irradiated with the light 1000 can be changed within a range of less than 2 μm.

Next, as an example shown in FIG. 8, the resist 601 that has not been irradiated with either the light 1000 or the light 1000A is removed by a development process using a developer supplied from a developer supply device (not shown). On the other hand, the resist 601A and the resist 601B irradiated with at least one of the drawing lights remain after development.

Next, as shown in an example in FIG. 9, a metal pattern 700 having a thickness of, for example, 2 μm is formed by plating in the region having a width D4 from which the resist 601 has been removed. Note that the metal pattern 700 is made of metal such as copper, for example.

Next, as an example shown in FIG. 10, the resist 601A and the resist 601B are removed by, for example, wet etching. As a result, metal patterns 700 having a width of 1 μm are formed, and the distance between the metal patterns 700 is 3 μm (the distance obtained by subtracting the width D4 from the sum of the widths D1 and D2).

Next, as an example shown in FIG. 11, a negative resist 602 is formed to cover the upper surface of the seed layer 600 and the upper surface and side surfaces of the metal pattern 700. Here, the resist 602 is formed by, for example, a slit coating method.

Next, as an example shown in FIG. 12, spatially modulated light 1001 is applied to a part of the negative resist 602 and a region that partially overlaps with the region where the metal pattern 700 is formed. irradiate. That is, the resist 602, which is a photosensitive material formed on the upper surface of the substrate W, is irradiated with drawing light according to a drawing pattern. In FIG. 12, the resist in the area irradiated with the light 1001 is shown as resist 602A.

Here, it is assumed that the width E1 of the resist 602A and the width E2 of the resist 602 are 2 μm, which is the minimum width that can be formed by the optical unit 40.

In FIG. 12, the width E1 of the resist 602A and the width E2 of the resist 602 are both 2 μm, but these may be larger than 2 μm. E2 may have different widths.

Next, as shown in an example in FIG. 13, a metal pattern 700 is formed in a region spanning resist 602 and resist 602A (that is, a region shifted from the region irradiated with light 1001 in FIG. 12). The spatially modulated light 1001A is irradiated onto a region that partially overlaps the region. That is, the resist 602 and the resist 602A, which are photosensitive materials formed on the upper surface of the substrate W, are irradiated with drawing light according to a drawing pattern that is at least partially deviated from the drawing pattern in FIG. corresponds to the shift pattern described below). In FIG. 13, among the regions irradiated with the light 1001A, the resist in the region not irradiated with the light 1001 in FIG. and the area irradiated with the light 1001A) is shown as a resist 602B.

In addition, in FIG. 13, similarly to the case in FIG. 12, it is assumed that the resolving power of the optical unit 40 is expressed as 2/2 μm [L/S]. Further, it is assumed that the region irradiated with the light 1001A is a region shifted by 1 μm from the region irradiated with the light 1001.

In this case, the width E3 of the resist 602B is 1 μm because it corresponds to the width of the region where the region irradiated with the light 1001 and the region irradiated with the light 1001A overlap.

Further, since the region irradiated with the light 1001A is shifted by 1 μm from the region irradiated with the light 1001, the width E4 of the resist 602 becomes 1 μm, which is narrower by 1 μm than the width E2 of the resist 602 in FIG. 12.

Note that the deviation width between the area irradiated with the light 1001A and the area irradiated with the light 1001 is not limited to 1 μm shown in FIG. It can be changed within the range where there is an area where the irradiated area overlaps with the irradiated area. That is, in the case of this embodiment, the deviation width between the area irradiated with the light 1001A and the area irradiated with the light 1001 can be changed within a range of less than 2 μm.

Next, as shown in an example in FIG. 14, the resist 602 that has not been irradiated with either the light 1001 or the light 1001A is removed by a development process using a developer supplied from a developer supply device (not shown). On the other hand, resists 602A and 602B, which are resists irradiated with at least one of light 1001 and light 1001A, remain even after development.

Next, as an example shown in FIG. 15, a metal pattern 701 having a thickness of, for example, 2 μm is formed by plating on a region having a width E4 from which the resist 602 has been removed.

Next, as an example shown in FIG. 16, resist 602A and resist 602B are removed, for example, by wet etching. As a result, a metal pattern 701 having a width of 1 μm is further formed between the metal patterns 700 (that is, in a region adjacent to the metal pattern 700). Further, the distance between metal pattern 700 and metal pattern 701 is 1 μm.

Then, by wet etching the seed layer 600, a pattern shape (metal pattern) of 1/1 μm [L/S] as shown in FIG. 17 can be formed.

<Specific example of negative type double irradiation treatment>
FIG. 18 is a plan view showing an example of a pattern shape formed by double irradiation processing. In FIG. 18, one side of one square corresponds to 1 μm.

According to this embodiment, when the resolving power of the optical unit 40 is 2/2 μm [L/S], the embodiment includes a line-shaped metal pattern with a width of 1 μm and a portion with a distance between the patterns of 1 μm. A pattern shape 900 can be formed. Here, the line shape refers to a shape including line segments, straight lines, and curves.

FIG. 19 is a plan view showing an example of a drawing pattern used in double irradiation processing.

FIG. 19 shows a state corresponding to, for example, the state shown in FIG. 6, in which a part of the formed resist 601 is irradiated with spatially modulated light according to a drawing pattern. The resist in the area irradiated with light becomes resist 601A.

FIG. 20 is a plan view showing an example of a drawing pattern used for double irradiation processing.

For example, FIG. 20 shows a state corresponding to the state shown in FIG. 7, in which a region spanning the resist 601 and resist 601A in FIG. spatially modulated light is irradiated onto the area) according to the drawing pattern.

Here, in FIG. 20, for the sake of simplicity, focusing only on the light irradiation in FIG. 20, a part of the formed resist 801 is irradiated with spatially modulated light. It is assumed that the resist in the area is resist 801A (that is, the overlap with the irradiated light is not considered in FIG. 19).

As shown in FIG. 20, the range in which resist 801 and resist 801A are formed is shifted from the range in which resist 601 and resist 601A are formed in FIG. 19, respectively.

However, in detail, the manner in which the resist 801 is deviated from the corresponding resist 601 is in the direction that intersects (orthogonal to in FIG. 20) the direction in which the line shape of the line-shaped drawing pattern extends. This is a form of deviation. As a method for shifting the resist 801 with respect to the resist 601, for example, there is a method in which one or more reference points are provided and the drawing pattern is moved around the reference points. Note that when the resist 801 is shifted from the resist 601, a portion of the resist 801 may be enlarged or reduced.

On the other hand, the circular portion of the resist 801 is not displaced from the resist 601. That is, the range in which the resist 801 is shifted relative to the resist 601 may be at least a portion of the resist 801.

Although the drawing pattern corresponding to the drawing light irradiated in FIG. 20 is shifted from the drawing pattern corresponding to the drawing light irradiated in FIG. The unit pattern forming the resist 801 in a certain portion is shifted in a direction intersecting the direction in which the line shape extends. Here, the unit pattern in the drawing pattern of FIG. 20 that is shifted from the corresponding unit pattern in the drawing pattern of FIG. 19 is referred to as a shift pattern.

Comparing FIG. 19 and FIG. 20, the above-mentioned shift pattern in FIG. 20 partially overlaps and deviates from the corresponding unit pattern in the drawing pattern in FIG. 19. That is, the resist 601 and the resist 801, which are regions not irradiated with drawing light, partially overlap but are shifted.

On the other hand, the line-shaped portion of the resist 601A that is the area irradiated with the drawing light in FIG. The line-shaped portions (for example, the portions sandwiched between the resists 801) are also partially overlapped and deviated from each other.

FIG. 21 is a plan view showing a state in the middle of formation of a pattern shape formed by double irradiation processing.

FIG. 21 shows a pattern shape 901 that is formed when the resist shown in FIGS. 19 and 20 is irradiated with light.

As shown in FIG. 21, by using the resists shown in FIGS. 19 and 20, it is possible to form a pattern shape (metal pattern) with a width of 1 μm that corresponds to a resolution exceeding that of the optical unit 40. can.

FIG. 22 is a plan view showing an example of a drawing pattern used in double irradiation processing.

FIG. 22 shows a state corresponding to, for example, the state shown in FIG. 12, in which a part of the formed resist 602 is irradiated with spatially modulated light. The resist in the area irradiated with light becomes resist 602A. Note that the illustration of the pattern shape that has already been formed is omitted for the sake of simplicity.

FIG. 23 is a plan view showing an example of a drawing pattern used in the double irradiation process.

For example, FIG. 23 shows a state corresponding to the state shown in FIG. 13, in which the area spanning the resist 602 and the resist 602A in FIG. spatially modulated light is irradiated onto the area).

Here, in FIG. 23, for the sake of simplicity, focusing only on the light irradiation in FIG. 23, a part of the formed resist 802 is irradiated with spatially modulated light, and the light is irradiated. It is assumed that the resist in the area is resist 802A (that is, the overlap with the irradiated light is not considered in FIG. 22).

As shown in FIG. 23, the range in which resist 802 and resist 802A are formed is shifted from the range in which resist 602 and resist 602A are formed in FIG. 22, respectively.

However, in detail, the manner in which the resist 802 is deviated from the resist 602 is the manner in which the drawing pattern, which is a line shape, is deviated in a direction that intersects with the direction in which the line shape extends (in a direction perpendicular to the direction in FIG. 23). It is. Note that when the resist 802 is shifted from the resist 602, a portion of the resist 802 may be enlarged or reduced.

On the other hand, the circular portion of the resist 802 is not displaced from the resist 602. That is, the range in which the resist 802 is shifted relative to the resist 602 may be at least a portion of the resist 802 .

FIG. 24 is a plan view showing an example of a pattern shape formed by double irradiation processing. FIG. 24 shows a pattern shape 900 obtained by the double irradiation process using the resist shown in FIGS. 19 and 20 and the double irradiation process using the resist shown in FIGS. 22 and 23. ing.

The distance between pattern shapes can be reduced by performing drawing separately in the double irradiation process using the resist shown in FIGS. 19 and 20 and the double irradiation process using the resist shown in FIGS. 22 and 23. For example, even in drawing with a width of 1 μm, that is, drawing in adjacent areas, it is possible to form a pattern shape with a width of 1 μm, which corresponds to a resolving power that exceeds the resolving power of the optical unit 40.

<Double irradiation treatment using positive photosensitive material>
Next, a double irradiation process using a positive type photosensitive material will be explained with reference to FIGS. 25 to 38. Note that FIG. 25 is a diagram showing an example of the photosensitive characteristics of a positive type photosensitive material. In FIG. 25, the vertical axis represents the remaining film thickness, and the horizontal axis represents the exposure amount [mJ/cm ² ]. Further, FIGS. 26 to 38 are cross-sectional views of the upper part of the substrate for explaining the double irradiation process using a positive type photosensitive material in this embodiment.

As shown in FIG. 25, the positive photosensitive material used in this embodiment is preferably a chemically amplified resist. In double irradiation processing, the exposure amount for one irradiation is smaller than the exposure amount E _init at which the film thickness begins to decrease due to development processing, and the exposure amount E _opt for two irradiation processing is such that the film thickness becomes 0 due to development processing. It is desirable that the resist has an exposure amount E that is greater than ₀ . In other words, it is desirable that the resist be removed by one irradiation with light, but not enough to reach the amount of exposure required to be removed by the development process, but with two irradiations of light to reach the amount of exposure required to be removed by the development process. .

Next, the procedure of double irradiation processing using a positive type photosensitive material will be explained. First, as shown in an example in FIG. 26, a seed layer 600 is formed on the upper surface of the substrate W, and a positive resist 611 is further formed on the upper surface of the seed layer 600.

Here, the positive resist 611 is, for example, a positive chemically amplified resist having a thickness of 3 μm.

Next, as an example shown in FIG. 27, a part of the positive resist 611 is irradiated with spatially modulated light 1000. In FIG. 27, the resist in the area irradiated with the light 1000 is shown as resist 611A.

Here, the width in which the resist 611A is formed is determined by the limit of the resolving power of the optical unit 40. In this embodiment, the width D1 of the resist 611A and the width D2 of the resist 611 are assumed to be 2 μm, which is the minimum width that can be formed by the optical unit 40.

Note that in FIG. 27, the width D1 of the resist 611A and the width D2 of the resist 611 are both 2 μm, but these may be larger than 2 μm. D2 may have different widths.

Next, as shown in an example in FIG. 28, spatially modulated light 1000A is applied to a region spanning resist 611 and resist 611A (that is, a region shifted from the region irradiated with light 1000 in FIG. 27). irradiate. In FIG. 28, among the areas irradiated with the light 1000A, the resist in the area not irradiated with the light 1000 in FIG. 27 is shown as resist 611A, and the area irradiated with the light 1000 in FIG. and the area irradiated with the light 1000A) is shown as a resist 611B.

In addition, in FIG. 28, similarly to the case in FIG. 27, it is assumed that the resolving power of the optical unit 40 is expressed as 2/2 μm [L/S]. Further, it is assumed that the region irradiated with the light 1000A is a region shifted by 1 μm from the region irradiated with the light 1000.

In this case, the width D3 of the resist 611B is 1 μm because it corresponds to the width of the region where the region irradiated with the light 1000 and the region irradiated with the light 1000A overlap.

Furthermore, since the region irradiated with the light 1000A is shifted by 1 μm from the region irradiated with the light 1000, the width D4 of the resist 611 is 1 μm narrower than the width D2 of the resist 611 in FIG. 27 by 1 μm.

Note that the deviation width between the area irradiated with the light 1000A and the area irradiated with the light 1000 is not limited to 1 μm shown in FIG. It can be changed within the range where there is an area where the irradiated area overlaps with the irradiated area. That is, in the case of this embodiment, the deviation width between the area irradiated with the light 1000A and the area irradiated with the light 1000 can be changed within a range of less than 2 μm.

Next, as shown in an example in FIG. 29, the resist 611B irradiated with both the light 1000 and the light 1000A is removed by a development process using a developer supplied from a developer supply device (not shown).

Next, as shown in an example in FIG. 30, a metal pattern 700 having a thickness of, for example, 2 μm is formed by plating in the region having a width D3 from which the resist 611B has been removed.

Next, as an example shown in FIG. 31, the resist 611 and the resist 611A are removed by, for example, wet etching. As a result, metal patterns 700 having a width of 1 μm are formed, and the distance between the metal patterns 700 is 3 μm (the distance obtained by subtracting the width D3 from the sum of the widths D1 and D2).

Next, as illustrated in FIG. 32, a positive resist 612 is formed to cover the upper surface of the seed layer 600 and the upper surface and side surfaces of the metal pattern 700. Here, the resist 612 is formed by, for example, a slit coating method.

Next, as an example shown in FIG. 33, spatial modulation is applied to a part of the positive resist 612 and an area adjacent to, but not overlapping with, the area where the metal pattern 700 is formed. The light 1001 is emitted. In FIG. 33, the resist in the area irradiated with light 1001 is shown as resist 612A.

Here, it is assumed that the width E1 of the resist 612A and the width E2 of the resist 612 are 2 μm, which is the minimum width that can be formed by the optical unit 40.

Note that in FIG. 33, the width E1 of the resist 612A and the width E2 of the resist 612 are both 2 μm, but these may be larger than 2 μm. E2 may have different widths.

Next, as an example is shown in FIG. 34, a metal pattern 700 is formed in a region spanning resist 612 and resist 612A (that is, a region shifted from the region irradiated with light 1001 in FIG. 33). The spatially modulated light 1001A is irradiated onto an area that does not overlap with the other area. In FIG. 34, among the regions irradiated with the light 1001A, the resist in the region not irradiated with the light 1001 in FIG. 33 is shown as resist 612A, and the region irradiated with the light 1001 in FIG. and the area irradiated with the light 1001A) is shown as a resist 612B.

In addition, in FIG. 34, similarly to the case in FIG. 33, the resolving power of the optical unit 40 is expressed as 2/2 μm [L/S]. Further, it is assumed that the region irradiated with the light 1001A is a region shifted by 1 μm from the region irradiated with the light 1001.

In this case, the width E3 of the resist 612B is 1 μm because it corresponds to the width of the region where the region irradiated with the light 1001 and the region irradiated with the light 1001A overlap.

Furthermore, since the region irradiated with the light 1001A is shifted by 1 μm from the region irradiated with the light 1001, the width E4 of the resist 612 is 1 μm narrower than the width E2 of the resist 612 in FIG. 33 by 1 μm.

Note that the deviation width between the area irradiated with the light 1001A and the area irradiated with the light 1001 is not limited to 1 μm shown in FIG. It can be changed within the range where there is an area where the irradiated area overlaps with the irradiated area. That is, in the case of this embodiment, the deviation width between the area irradiated with the light 1001A and the area irradiated with the light 1001 can be changed within a range of less than 2 μm.

Next, as shown in an example in FIG. 35, the resist 612B irradiated with both the light 1001 and the light 1001A is removed by a development process using a developer supplied from a developer supply device (not shown).

Next, as an example shown in FIG. 36, a metal pattern 701 having a thickness of, for example, 2 μm is formed by plating in the region having a width E3 from which the resist 612B has been removed.

Next, as illustrated in FIG. 37, resist 612 and resist 612A are removed, for example, by wet etching. As a result, a metal pattern 701 having a width of 1 μm is further formed between the metal patterns 700 (that is, in a region adjacent to the metal pattern 700). Further, the distance between metal pattern 700 and metal pattern 701 is 1 μm.

Then, by wet etching the seed layer 600, a pattern shape (metal pattern) of 1/1 μm [L/S] as shown in FIG. 38 can be formed.

<About the effects produced by the embodiments described above>
Next, examples of effects produced by the embodiment described above will be shown. In addition, in the following description, the effects will be described based on the specific configurations shown in the embodiments described above, but examples will not be included in the present specification to the extent that similar effects are produced. may be replaced with other specific configurations shown.

According to the embodiment described above, the drawing method includes the step of irradiating the photosensitive material disposed on the upper surface of the substrate W with drawing light in the first drawing pattern; A step of irradiating a drawing light with a second drawing pattern having at least a part of the shift pattern, and a step of developing the photosensitive material after irradiating the drawing light with the first drawing pattern and the second drawing pattern. , forming a first pattern shape on the upper surface of the substrate W based on the developed photosensitive material. Here, the photosensitive material corresponds to, for example, the resist 601. Further, the drawing light corresponds to, for example, the light 1000. Further, the first pattern shape corresponds to, for example, the metal pattern 700. The first shift pattern is a unit pattern that at least partially overlaps the corresponding unit pattern in the first drawing pattern and is shifted from the corresponding unit pattern.

According to such a configuration, it is possible to realize miniaturization of the formed pattern shape while suppressing a decrease in the depth of focus.

Generally, the resolving power of an exposure apparatus is proportional to the wavelength used for exposure, and the numerical aperture (NA) of a lens is inversely proportional to the resolving power. Note that NA is the product of the refractive index and sin θ (θ is the incident angle that light used for exposure has with respect to the substrate). Therefore, by increasing the NA, the resolution of the exposure apparatus can be improved.

On the other hand, the depth of focus (DOF) is inversely proportional to the square of NA. Therefore, if you increase the NA. The depth of focus (DOF) decreases rapidly.

Therefore, if you try to increase the resolution by increasing the NA, the focus margin will sharply decrease, making it difficult to perform appropriate exposure even if there are slight irregularities on the top surface of the substrate. becomes difficult.

On the other hand, according to this embodiment, the pattern shape can be made finer without changing the NA. Therefore, it is possible to suppress a decrease in the depth of focus.

Note that if there are no particular restrictions, the order in which each process is performed can be changed.

In addition, if other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, if other configurations in the specification of the present application that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, the unit pattern has a line shape. The first shift pattern is a unit pattern that is shifted from the corresponding unit pattern in a direction that intersects the direction in which the line shape extends. According to such a configuration, the width at which the exposed portions of the drawing pattern overlap (or the width at which the non-exposed portions overlap) becomes a fine width exceeding the resolving power of the optical unit 40 in the direction crossing the direction in which the line shape extends. Therefore, by overlapping the drawn patterns, the formed pattern shape can be miniaturized.

Furthermore, according to the embodiments described above, at least a portion of the photosensitive material irradiated with the drawing light is removed after development. According to such a configuration, a metal pattern 700 having a width of 1 μm can be formed by plating on a region having a width D3 from which the resist 611B that has been irradiated with light has been removed.

Further, according to the embodiment described above, the resist 611B is developed after being irradiated with only one of the light 1000 A in the first drawing pattern and the light 1000 A in the second drawing pattern. If it is not removed after development, and if it is developed after irradiation with both the light 1000 A in the first drawing pattern and the light 1000 A in the second drawing pattern, it is removed after development. According to such a configuration, a metal pattern 700 having a width of 1 μm can be formed by plating on a region having a width D3 from which the resist 611B is removed and irradiated with both the light 1000 and the light 1000A.

Further, according to the embodiment described above, the resist 601A and the resist 601B irradiated with the drawing light remain after development. According to such a configuration, by removing the resist 601 that has not been irradiated with either the light 1000 or the light 1000A, a metal pattern 700 having a width of 1 μm is plated in a region having a width D4 from which the resist 601 has been removed. can be formed.

According to the embodiment described above, the step of irradiating the photosensitive material with the light 1001 in the third drawing pattern in the adjacent region that is the region adjacent to the region where the metal pattern 700 is formed; , a step of irradiating the photosensitive material with light 1001A in an adjacent region with a fourth drawing pattern having at least a portion of the second shift pattern, and drawing with a third drawing pattern and a fourth drawing pattern. After irradiation with light, the method includes a step of developing the photosensitive material, and a step of forming a second pattern shape on the upper surface of the substrate W based on the developed photosensitive material. Here, the second pattern shape corresponds to, for example, the metal pattern 701. The second shift pattern is a unit pattern that at least partially overlaps the corresponding unit pattern in the third drawing pattern and is shifted from the corresponding unit pattern. According to such a configuration, by performing the double irradiation process to form the metal pattern 701 in addition to the double irradiation process to form the metal pattern 700, the distance between the pattern shapes can be reduced to 1 μm, for example. In other words, even in drawing in adjacent areas, it is possible to form a pattern shape with a width of 1 μm that corresponds to a resolving power that exceeds the resolving power of the optical unit 40.

Further, according to the embodiment described above, the unit pattern has a line shape. The second shift pattern is a unit pattern that is shifted from the corresponding unit pattern in a direction that intersects the direction in which the line shape extends. According to such a configuration, the width at which the exposed portions of the drawing pattern overlap (or the width at which the non-exposed portions overlap) becomes a fine width exceeding the resolving power of the optical unit 40 in the direction crossing the direction in which the line shape extends. Therefore, by overlapping the drawing patterns, the pattern shape formed can be made finer.

Furthermore, according to the embodiment described above, at least a portion of the photosensitive material irradiated with the drawing light in the adjacent region is removed after development. According to such a configuration, a metal pattern 701 having a width of 1 μm can be formed by plating on a region having a width E3 from which the resist 612B that has been irradiated with light has been removed.

Further, according to the embodiment described above, the resist 612B in the adjacent region is irradiated with only one of the light 1001 in the third drawing pattern and the light 1001A in the fourth drawing pattern. If it is developed, it is not removed after development, and if it is developed after being irradiated with both the light 1001 in the third drawing pattern and the light 1001A in the fourth drawing pattern, it is removed after development. According to such a configuration, a metal pattern 701 having a width of 1 μm can be formed by plating in a region having a width E3 from which the resist 612B is removed and which is irradiated with both the light 1001 and the light 1001A.

Further, according to the embodiment described above, in the adjacent regions, the resist 602A and the resist 602B irradiated with the drawing light remain after development. According to such a configuration, by removing the resist 602 that has not been irradiated with either the light 1001 or the light 1001A, a metal pattern 701 having a width of 1 μm is plated in a region having a width E4 from which the resist 602 has been removed. can be formed.

Further, according to the embodiment described above, the substrate W is a glass substrate, and the material of the metal pattern 700 is copper. According to such a configuration, a fine copper wire pattern can be formed on the glass substrate.

According to the embodiment described above, the drawing apparatus includes an irradiation section that irradiates the photosensitive material disposed on the upper surface of the substrate W with drawing light, and a control section 80 that controls the operation of the irradiation section. Be prepared. Here, the illumination section corresponds to, for example, the optical unit 40. The control unit 80 causes the optical unit 40 to irradiate the photosensitive material with drawing light in the first drawing pattern. Further, the control unit 80 causes the optical unit 40 to irradiate the photosensitive material with drawing light in a second drawing pattern having at least a portion of the first shift pattern. Here, the first shift pattern is a unit pattern that at least partially overlaps the corresponding unit pattern in the first drawing pattern and is shifted from the corresponding unit pattern.

According to such a configuration, it is possible to realize miniaturization of the formed pattern shape while suppressing a decrease in the depth of focus.

In addition, in the case where other configurations illustrated in the present specification are appropriately added to the above configuration, that is, when other configurations in the present specification that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

<About modifications of the embodiment described above>
In the above embodiment, double irradiation processing using a negative photosensitive material and double irradiation processing using a positive photosensitive material have been explained, but in the double irradiation processing, the first A negative (or positive) photosensitive material may be used for the second irradiation, and a positive (or negative) photosensitive material may be used for the second irradiation. That is, different types of photosensitive materials may be used for the first light irradiation and the second light irradiation.

Furthermore, in the above embodiment, the first light irradiation and the second light irradiation for the double irradiation process were performed at different timings, but both light irradiations were performed at the same time. Good too. That is, for example, the drawing pattern shown in FIG. 19 and the drawing pattern shown in FIG. 20 may be used simultaneously, and both may be irradiated with light at the same time.

In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are only one example in all aspects. However, it is not limited to what is described in the specification of this application.

Accordingly, countless variations and equivalents, not illustrated, are envisioned within the scope of the technology disclosed herein. For example, this includes cases in which at least one component is modified, added, or omitted.

1 Drawing device 10 Stage 20 Stage drive mechanism 21 Rotation mechanism 22 Support plate 23 Sub-scanning mechanism 24 Base plate 25 Main scanning mechanism 30 Stage position measurement unit 40 Optical unit 41 Laser drive unit 42 Laser oscillator 43 Illumination optical system 44 Spatial light modulation unit 45 Projection optical system 46 Mirror 50 Imaging section 60 Conveying device 61 Hand 62 Hand drive mechanism 70 Pre-alignment section 80 Control section 81 CPU
82 ROM
83 RAM
84 Storage device 85 Bus line 86 Input section 87 Display section 88 Communication section 101 Main body frame 102 Processing area 103 Delivery area 104 Cassette placement section 105 Base 107 Support frame 211 Rotation shaft section 212 Rotation drive section 231, 251 Linear motor 232, 252 Guide member 401 Light source section 402 Head section 441 Spatial light modulator 501 Illumination unit 600 Seed layer 601, 601A, 601B, 602, 602A, 602B, 611, 611A, 611B, 612, 612A, 612B, 801, 801A, 802, 802A Resist 700,701 Metal pattern 900,901 Pattern shape 1000,1000A,1001,1001A Light

Claims (9)

irradiating the photosensitive material disposed on the upper surface of the substrate with drawing light in a first drawing pattern;
irradiating the photosensitive material with the drawing light in a second drawing pattern having at least a portion of the first shift pattern;
Developing the photosensitive material after irradiation with the drawing light in the first drawing pattern and the second drawing pattern;
forming a first pattern shape on the upper surface of the substrate based on the developed photosensitive material,
The first shift pattern is the unit pattern that partially overlaps the corresponding unit pattern in the first drawing pattern and is shifted from the corresponding unit pattern,
irradiating the photosensitive material with the drawing light in a third drawing pattern in an adjacent area that is an area adjacent to the area where the first pattern shape is formed;
irradiating the photosensitive material with the drawing light in the adjacent region in a fourth drawing pattern having at least a portion of the second shift pattern;
Developing the photosensitive material after irradiation with the drawing light in the third drawing pattern and the fourth drawing pattern;
further comprising a step of forming a second pattern shape on the upper surface of the substrate based on the developed photosensitive material,
The second shift pattern is the unit pattern that partially overlaps the corresponding unit pattern in the third drawing pattern and is shifted from the corresponding unit pattern,
How to draw. The drawing method according to claim 1 ,
The unit pattern has a line shape,
The first shift pattern is the unit pattern that is shifted from the corresponding unit pattern in a direction that intersects the direction in which the line shape extends.
How to draw. The drawing method according to claim 1 ,
The unit pattern has a line shape,
The second shift pattern is the unit pattern that is shifted from the corresponding unit pattern in a direction that intersects the direction in which the line shape extends.
How to draw. The drawing method according to claim 1 ,
In the adjacent region, at least a portion of the photosensitive material irradiated with the drawing light is removed after development.
How to draw. The drawing method according to claim 4 ,
If the photosensitive material in the adjacent area is developed after being irradiated with only one of the drawing light in the third drawing pattern and the drawing light in the fourth drawing pattern, If not removed and developed after irradiation with both the drawing light in the third drawing pattern and the drawing light in the fourth drawing pattern, it is removed after development.
How to draw. The drawing method according to claim 1 ,
In the adjacent region, the photosensitive material irradiated with the drawing light remains after development;
How to draw. The drawing method according to claim 1 ,
The substrate is a glass substrate, and the material of the first pattern shape is copper.
How to draw. The drawing method according to claim 1 ,
when exposing the first drawing pattern and the second drawing pattern without using a mask;
How to draw. an irradiation unit that irradiates the photosensitive material placed on the top surface of the substrate with drawing light;
and a control unit that controls the operation of the irradiation unit,
The control unit includes:
causing the irradiation unit to irradiate the photosensitive material with the drawing light in a first drawing pattern,
The irradiation unit irradiates the photosensitive material with the drawing light in a second drawing pattern having at least a portion of the first shift pattern, and the upper surface of the substrate is determined based on the developed photosensitive material. forming a first pattern shape,
The first shift pattern is the unit pattern that partially overlaps the corresponding unit pattern in the first drawing pattern and is shifted from the corresponding unit pattern,
The control unit includes:
causing the irradiation unit to irradiate the photosensitive material with the drawing light in a third drawing pattern in an adjacent area that is an area adjacent to the area where the first pattern shape is formed;
causing the irradiation unit to irradiate the photosensitive material in the adjacent region with the drawing light in a fourth drawing pattern having at least a portion of the second shift pattern;
After irradiation with the drawing light in the third drawing pattern and the fourth drawing pattern, the photosensitive material is developed,
A second pattern shape is formed on the upper surface of the substrate based on the developed photosensitive material,
The second shift pattern is the unit pattern that partially overlaps the corresponding unit pattern in the third drawing pattern and is shifted from the corresponding unit pattern,
drawing device.

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