JP7349784B2 - Substrate processing system and substrate processing method - Google Patents

Description

The present disclosure relates to a substrate processing system and a substrate processing method.

The wafer manufacturing method described in Patent Document 1 includes a slicing step of slicing a single crystal ingot to obtain a thin disk-shaped wafer, a coating step of applying a curable material to a first surface of the wafer, and a coating step of slicing a single crystal ingot to obtain a thin disk-shaped wafer. A step of processing the hardenable material into a flat surface, and a grinding step of placing the flat surface of the hardened hardenable material on a holding means and grinding a second surface of the wafer opposite to the first surface. have The second surface can be ground parallel to the flat surface of the curable material to remove waviness from the wafer.

Japanese Patent Application Publication No. 2006-269761

One aspect of the present disclosure provides a technique that can suppress contamination of a substrate processing system by a planarizing agent applied to an uneven surface of a substrate.

A substrate processing system according to one aspect of the present disclosure includes:
A laminating apparatus for laminating the first substrate and the second substrate with a liquid flattening agent interposed between the uneven surface of the first substrate and the flat surface of the second substrate, the laminating apparatus comprising: a laminating device having a first holding part that holds the second substrate from the side opposite to the planarizing agent; and a second holding part that holds the second substrate from the side opposite to the planarizing agent;
a solidifying device that forms a flattening layer by solidifying the liquid flattening agent in a state where the first substrate and the second substrate are stacked;
a peeling device that peels off the first substrate, the planarization layer, and the second substrate;
a grinding device that grinds a surface of the first substrate opposite to the uneven surface while holding the first substrate via the planarization layer;
a cleaning device that cleans the second substrate after separating the first substrate, the planarization layer, and the second substrate;
Equipped with
The cleaning device includes a first cleaning device that cleans the uneven surface of the first substrate after grinding the uneven surface of the first substrate, and a first cleaning device that cleans the uneven surface of the first substrate after grinding the opposite surface of the first substrate. a second cleaning device that cleans the opposite surface of one substrate; and a third cleaning device that cleans the second substrate after peeling off the first substrate, the planarization layer, and the second substrate. .

According to one aspect of the present disclosure, it is possible to prevent a substrate processing system from being contaminated by a planarizing agent applied to an uneven surface of a substrate.

FIG. 1 is a plan view showing a substrate processing system according to one embodiment. FIG. 2 is a side view showing a substrate processing system according to one embodiment. FIG. 3 is a plan view showing a grinding device according to one embodiment. FIG. 4 is a flowchart illustrating a portion of a substrate processing method according to one embodiment. FIG. 5 is a diagram showing an example of applying a flattening agent (step S102), applying a mold release agent (step S104), and reversing the second substrate (step S105) shown in FIG. FIG. 6 is a diagram showing an example of lamination (step S106), solidification (step S107), and peeling (step S108) shown in FIG. FIG. 7 is a flowchart showing another part of the substrate processing method according to one embodiment. FIG. 8 is a diagram showing an example of the first reversal (step S201), the grinding of the second main surface (step S202), and the second reversal (step S203) shown in FIG. FIG. 9 is a diagram showing an example of cleaning the second main surface (step S204), grinding the flattening layer (step S205), and grinding the first main surface (step S206) shown in FIG. FIG. 10 is a diagram showing an example of the cleaning of the first main surface (step S207), the etching of the first main surface (step S208), and the third inversion (step S209) shown in FIG. 7. FIG. 11 is a diagram showing an example of the etching of the second main surface (step S210) shown in FIG. 7 and the first substrate obtained by the etching (step S210). FIG. 12 is a flowchart illustrating the remainder of the substrate processing method according to one embodiment. FIG. 13 is a diagram showing an example of cleaning the second substrate shown in FIG. 12 (step S301) and the second substrate obtained by the cleaning (step S301).

Embodiments of the present disclosure will be described below with reference to the drawings. Note that in each drawing, the same or corresponding configurations are denoted by the same or corresponding symbols, and explanations may be omitted. In this specification, the X-axis direction, Y-axis direction, and Z-axis direction are directions perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal, and the Z-axis direction is vertical.

FIG. 1 is a plan view showing a substrate processing system according to one embodiment. FIG. 2 is a side view showing a substrate processing system according to one embodiment. The substrate processing system 1 includes a loading/unloading station 2, a first processing station 3, a second processing station 6, and a control device 9. The loading/unloading station 2, the first processing station 3, and the second processing station 6 are arranged in this order from the negative side in the X-axis direction to the positive side in the X-axis direction.

The loading/unloading station 2 includes a first loading section 21, a second loading section 22, and a third loading section 23. The first mounting section 21, the second mounting section 22, and the third mounting section 23 are arranged in a line in the Y-axis direction. The first accommodating portion C1 is placed on the first placing portion 21. The second accommodating portion C2 is placed on the second placing portion 22. The third accommodating portion C3 is placed on the third placing portion 23.

The first storage section C1 stores the first substrate 10 before processing. The first accommodating portion C1 accommodates, for example, a plurality of first substrates 10 at intervals in the vertical direction. The first substrate 10 is, for example, a semiconductor substrate such as a silicon wafer. The first substrate 10 is manufactured, for example, by slicing an ingot. The first substrate 10 has a first main surface 11 and a second main surface 12 that face each other (see FIG. 5(a)). The first main surface 11 and the second main surface 12 are each uneven surfaces.

The second storage section C2 stores the first substrate 10 after processing. The second accommodating portion C2 accommodates, for example, a plurality of first substrates 10 at intervals in the vertical direction. The first substrate 10 is accommodated in the second accommodation portion C2 after the first main surface 11 is ground and the second main surface 12 is ground. The second accommodating part C2 and the first accommodating part C1 may have the same structure, but have different structures in this embodiment.

For example, the second accommodating part C2 accommodates a plurality of first substrates 10 at a narrower pitch than the first accommodating part C1. The first substrate 10 becomes thinner by being ground. As the thickness of the first substrate 10 is reduced, the pitch of the first substrate 10 can be narrowed. When the first accommodating part C1 and the second accommodating part C2 accommodate the same number of first substrates 10, the second accommodating part C2 can be made smaller than the first accommodating part C1. Further, when the first accommodating part C1 and the second accommodating part C2 have the same size, the number of sheets accommodated in the second accommodating part C2 can be increased more than the number of sheets accommodated in the first accommodating part C1.

Moreover, unlike the first housing part C1, the second housing part C2 may have a lid that opens and closes the housing space that houses the first substrate 10. Adhesion of particles to the ground first substrate 10 can be suppressed. The first accommodating part C1 does not need to have a lid for opening and closing the accommodating space for accommodating the first substrate 10 because the first substrate 10 is ground after being taken out from the first accommodating part C1. This is because particles are removed at that time.

The third accommodating portion C3 accommodates the second substrate 15. The third storage portion C3 stores, for example, a plurality of second substrates 15 at intervals in the vertical direction. The second substrate 15 is, for example, a glass substrate. The second substrate 15 is planarized in advance. The second substrate 15 has a first main surface 16 and a second main surface 17 that face each other (see FIG. 4(b)). The first main surface 16 and the second main surface 17 are each flat surfaces. Unlike the first substrate 10, the second substrate 15 is not ground in the substrate processing system 1, so it remains the same thickness. Therefore, after the second substrate 15 is taken out from the third accommodating part C3, it may be returned to the same third accommodating part C3.

The loading/unloading station 2 also includes a transport section 26 . The transport section 26 is arranged next to the first mounting section 21, the second mounting section 22, and the third mounting section 23, for example, on the positive side of these in the X-axis direction. Further, the conveyance section 26 is arranged next to the delivery section 28, for example, on the negative side of the delivery section 28 in the X-axis direction. The transport unit 26 includes a transport device 27 therein. The transport device 27 includes a holding mechanism that holds the first substrate 10 and the second substrate 15. The holding mechanism is capable of movement in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, as well as rotation about the vertical axis.

The transport device 27 transports the first substrate 10 between the first storage section C1 placed on the first mounting section 21 and the delivery section 28. Further, the transport device 27 transports the first substrate 10 between the second storage section C2 placed on the second mounting section 22 and the delivery section 28. Further, the transport device 27 transports the second substrate 15 between the third storage section C3 placed on the third mounting section 23 and the delivery section 28.

The loading/unloading station 2 also includes a delivery section 28 . The delivery section 28 is arranged next to the transport section 26, for example, on the positive side of the transport section 26 in the X-axis direction. Further, the delivery section 28 is arranged next to the first processing station 3, for example, on the negative side of the first processing station 3 in the X-axis direction. The delivery section 28 has a first transition device 29 . The first transition device 29 temporarily accommodates the first substrate 10 and the second substrate 15. The first transition device 29 may also serve as a reversing device 290 (see FIGS. 5(c) and 10(c)). The inverting device 290 inverts the first substrate 10 and/or the second substrate 15 upside down. The arrangement and number of first transition devices 29 are not limited to those shown in FIG. 1.

The first processing station 3 comprises a processing block 4 . The processing block 4 includes a flattening agent coating device 40, a release agent coating device 41, a laminating device 42, a solidifying device 43, a peeling device 44, a first cleaning device 45, a second cleaning device 46, A first etching device 47, a second etching device 48, and a third cleaning device 49 are provided. Note that the arrangement and number of various devices constituting the processing block 4 are not limited to the arrangement and number shown in FIGS. 1 and 2.

The planarizing agent coating device 40 applies a liquid planarizing agent 401 to the first main surface 11 of the first substrate 10, as shown in FIG. 5(a). The release agent coating device 41 applies a release agent 411 to the first main surface 16 of the second substrate 15, as shown in FIG. 5(b). As shown in FIG. 6A, the laminating device 42 places the first main surface 11 of the first substrate 10 and the first main surface 16 of the second substrate 15 facing each other, and deposits the first The substrate 10 and the second substrate 15 are laminated. A mold release agent 411 is applied to the first main surface 16 of the second substrate 15 in advance. As shown in FIG. 6A, the solidifying device 43 solidifies the planarizing agent 401 in a state where the first substrate 10 and the second substrate 15 are stacked, thereby forming the first main surface 11 of the first substrate 10. A planarization layer 402 is then formed. Solidification includes hardening by condensation or addition reactions and phase transition from liquid to solid by cooling. The laminating device 42 and the solidifying device 43 constitute a bonding device that bonds the first substrate 10 and the second substrate 15 via the planarizing agent 401. The peeling device 44 peels off the first substrate 10 and the planarization layer 402 from the second substrate 15, as shown in FIG. 6(b). When the mold release agent 411 is applied to the first main surface 16 of the second substrate 15, the mold release agent 411 and the planarization layer 402 are separated at their interface.

After grinding the second main surface 12 of the first substrate 10, the second cleaning device 46 cleans the second main surface 12 of the first substrate 10, as shown in FIG. 9(a). After grinding the first main surface 11 of the first substrate 10, the first cleaning device 45 cleans the first main surface 11 of the first substrate 10, as shown in FIG. 10(a). After grinding the first main surface 11 of the first substrate 10, the first etching device 47 etches the first main surface 11 of the first substrate 10 as shown in FIG. 10(b). After grinding the second main surface 12 of the first substrate 10, the second etching device 48 etches the second main surface 12 of the first substrate 10, as shown in FIG. 11(a).

After the first substrate 10 and planarization layer 402 are separated from the second substrate 15, the third cleaning device 49 cleans the second substrate 15 as shown in FIG. 13(a). The mold release agent 411 may remain on the first main surface 16 of the second substrate 15 . The remaining mold release agent 411 can be removed by the third cleaning device 49, and the second substrate 15 can be reused for lamination with another first substrate 10. Further, the planarizing agent 401 may remain on the first main surface 16 of the second substrate 15. The remaining planarizing agent 401 can be removed by the third cleaning device 49, and the second substrate 15 can be reused for lamination with another first substrate 10.

The first processing station 3 includes a transport section 5 as shown in FIG. The transport unit 5 is arranged next to the first transition device 29 of the loading/unloading station 2, and is arranged, for example, on the positive side of the first transition device 29 in the X-axis direction. Further, the transport unit 5 is arranged next to the processing block 4, for example, on the positive side of the processing block 4 in the Y-axis direction. Further, the transport unit 5 is arranged next to the second transition device 71 of the second processing station 6, and is arranged, for example, on the negative side of the second transition device 71 in the X-axis direction. The transport unit 5 includes a transport device 51 therein. The transport device 51 includes a holding mechanism that holds the first substrate 10 and the second substrate 15. The holding mechanism is capable of movement in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, as well as rotation about the vertical axis.

The transport device 51 transports the first substrate 10 to the first transition device 29 of the loading/unloading station 2 , the processing block 4 of the first processing station 3 , and the second transition device 71 of the second processing station 6 . Further, the transport device 51 transports the second substrate 15 to the first transition device 29 of the loading/unloading station 2 and the processing block 4 of the first processing station 3 .

The second processing station 6 includes a delivery section 7 and a grinding device 8. The delivery section 7 is arranged next to the transport section 5 of the first processing station 3, and is arranged, for example, on the positive side of the transport section 5 in the X-axis direction. Further, the delivery section 7 is arranged next to the grinding device 8, for example, on the negative side of the grinding device 8 in the X-axis direction.

The delivery section 7 includes a second transition device 71. The second transition device 71 temporarily accommodates the first substrate 10. The second transition device 71 may also serve as a reversing device 710 (see FIG. 8(a)). The inverting device 710 inverts the first substrate 10 upside down. The arrangement and number of second transition devices 71 are not limited to those shown in FIG. 1.

Furthermore, the delivery section 7 includes a transfer robot 72 . The transfer robot 72 is, for example, an articulated robot having a plurality of arms, although it is not particularly limited. The articulated robot has a suction pad at its tip that suctions the first substrate 10 . The suction pad has a circular suction surface with a diameter larger than the diameter of the first substrate 10, and the first substrate 10 is suctioned onto the suction surface. The suction pad can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate about the vertical axis. The transport robot 72 transports the first substrate 10 to the second transition device 71 and the grinding device 8 .

The grinding device 8 grinds the first substrate 10 while holding the first substrate 10 via the planarizing layer 402, as shown in FIG. 8(b). The planarization layer 402 is previously formed on the first main surface 11, and the second main surface 12 is ground. The second main surface 12 can be ground parallel to the flat surface of the planarization layer 402. After that, the first substrate 10 is carried out from the grinding device 8, then turned upside down by the inverting device of the delivery section 7, and then carried into the grinding device 8 again. The grinding device 8 grinds the planarization layer 402 as shown in FIG. 9(b), and then grinds the first main surface 11 of the first substrate 10 as shown in FIG. 9(c). The first main surface 11 can be ground parallel to the second main surface 12, which is a flat surface.

The grinding device 8 serves as a device for grinding the planarization layer 402, a device for grinding the first main surface 11 of the first substrate 10, and a device for grinding the second main surface 12 of the first substrate 10. Note that the device for grinding the planarization layer 402, the device for grinding the first main surface 11 of the first substrate 10, and the device for grinding the second main surface 12 of the first substrate 10 are provided separately. Good too. Furthermore, instead of the device that grinds the planarization layer 402, the substrate processing system 1 may include a removal device that dissolves and removes the planarization layer 402 with a solvent. As the solvent, for example, an alkaline or acidic chemical solution is used. Removal of planarization layer 402 is performed after grinding second main surface 12 of first substrate 10 and before grinding first main surface 11 of first substrate 10 .

FIG. 3 is a plan view showing a grinding device according to one embodiment. FIG. 3(a) is a plan view showing an example of the positions of four substrate chucks when the rotary table shown in FIG. 3(b) is rotated by 180 degrees. FIG. 3(b) is a plan view showing an example of the positions of four substrate chucks when the rotary table shown in FIG. 3(a) is rotated by 180 degrees. The direction of rotation of the rotary table 81 is opposite when rotating the rotary table 81 by 180 degrees as shown in FIG. 3(a) and when rotating the rotary table 81 by 180 degrees as shown in FIG. 3(b).

The grinding device 8 includes a rotary table 81, four substrate chucks 82A, 82B, 82C, and 82D, and two processing units 83A and 83B. Note that the number and arrangement of substrate chucks 82 are not particularly limited. Furthermore, the number and arrangement of processing units 83 are not particularly limited.

The rotary table 81 is rotated about a rotation center line 81Z. The rotation center line 81Z of the rotary table 81 is arranged vertically, for example. Around the rotation center line 81Z of the rotary table 81, four substrate chucks 82A, 82B, 82C, and 82D are arranged at equal intervals.

The pair of substrate chucks 82A and 82C are arranged with the rotation center line 81Z of the rotary table 81 interposed therebetween. The pair of substrate chucks 82A and 82C rotate together with the rotary table 81 and alternately move to the first loading/unloading position A0 and the first processing position A2.

The first carry-in/out position A0 serves as both a carry-in position where the first substrate 10 is carried in and a carry-out position where the first substrate 10 is carried out. Carrying in the first substrate 10 and carrying out the first substrate 10 is carried out by the transfer robot 72. At the first loading/unloading position A0, the substrate chucks 82A, 82C hold the first substrate 10 with the second main surface 12 of the first substrate 10 facing upward, with the planarization layer 402 interposed therebetween.

The first processing position A2 is a processing position where the second main surface 12 of the first substrate 10 is ground. Grinding of the second main surface 12 of the first substrate 10 is performed by the processing unit 83A. Since the first substrate 10 is held by the substrate chucks 82A and 82C via the planarization layer 402, the second main surface 12 of the first substrate 10 can be ground parallel to the flat surface of the planarization layer 402.

The remaining pair of substrate chucks 82B and 82D are arranged with the rotation center line 81Z of the rotary table 81 interposed therebetween. The pair of substrate chucks 82B and 82D rotate together with the rotary table 81 and alternately move to the second loading/unloading position A1 and the second processing position A3.

The second carry-in/out position A1 serves as both a carry-in position where the first substrate 10 is carried in and a carry-out position where the first substrate 10 is carried out. Carrying in the first substrate 10 and carrying out the first substrate 10 is carried out by the transfer robot 72. At the second loading/unloading position A1, the substrate chucks 82B, 82D hold the first substrate 10 with the second main surface 12 of the first substrate 10 facing down.

The second processing position A3 is a processing position where the planarization layer 402 is ground and the first main surface 11 of the first substrate 10 is ground. The planarization layer 402 and the first main surface 11 of the first substrate 10 are ground by the processing unit 83B. The first main surface 11 of the first substrate 10 can be ground parallel to the second main surface 12, which is a flat surface.

The control device 9 is composed of, for example, a computer, and as shown in FIG. 1, includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed in the substrate processing system 1 . The control device 9 controls the operation of the substrate processing system 1 by causing the CPU 91 to execute a program stored in the storage medium 92 . Further, the control device 9 includes an input interface 93 and an output interface 94. The control device 9 receives signals from the outside through an input interface 93 and transmits signals to the outside through an output interface 94.

Such a program may be stored in a computer-readable storage medium, and may be installed from the storage medium into the storage medium 92 of the control device 9. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnetic optical disks (MO), and memory cards. Note that the program may be downloaded from a server via the Internet and installed in the storage medium 92 of the control device 9.

FIG. 4 is a flowchart illustrating a portion of a substrate processing method according to one embodiment. Steps S101 to S108 shown in FIG. 4 are performed under the control of the control device 9.

The substrate processing method includes a step S101 of taking out the first substrate 10 from the first accommodating part C1 placed on the first placing part 21. The first substrate 10 is taken out from the first storage part C1 by the transport device 27, and then transported to the first transition device 29 by the transport device 27. Next, the first substrate 10 is transported from the first transition device 29 to the planarizing agent application device 40 by the transport device 51.

FIG. 5A is a diagram showing an example of applying the flattening agent (step S102) shown in FIG. 4. The substrate processing method includes step S102 of applying a liquid planarizing agent 401 to the first main surface 11 of the first substrate 10 using the planarizing agent coating device 40. The flattening agent application device 40 includes, for example, a table 405 and a nozzle 406, as shown in FIG. 5(a). Table 405 supports first substrate 10 from below, with first main surface 11 of first substrate 10 facing upward. The nozzle 406 discharges the liquid planarizing agent 401 onto the first substrate 10 held on the table 405 from above the first substrate 10 .

The method for applying the planarizing agent 401 is, for example, a spin coating method, and the planarizing agent 401 is applied to the first substrate 10 while rotating the first substrate 10 together with the table 405. The method for applying the flattening agent 401 is not limited to the spin coating method, and may be, for example, a screen printing method, a roll coating method, a die coating method, or the like.

As the flattening agent 401, for example, an ultraviolet curing resin is used. The ultraviolet curable resin includes, for example, silsesquioxane. Silsesquioxane is a siloxane compound whose main chain skeleton is composed of Si—O bonds. Silsesquioxane is a substance intermediate between inorganic silica and organic silicone. Therefore, the shrinkage rate during curing is small and the hardness after curing is high. Note that as the flattening agent 401, an ultraviolet curable resin is used in this embodiment, but a thermosetting resin or a thermoplastic resin may also be used.

After the first substrate 10 is coated with the planarizing agent 401, it is transported from the planarizing agent coating device 40 to the laminating device 42 by the transport device 51, and is subjected to lamination with the second substrate 15 (step S106). As shown in FIG. 4, before lamination (step S106), the second substrate is taken out (step S103), a release agent is applied (step S104), and the second substrate is reversed (step S105).

The substrate processing method includes a step S103 of taking out the second substrate 15 from the third accommodating part C3 placed on the third placing part 23. The second substrate 15 is taken out from the third storage part C3 by the transport device 27, and then transported to the first transition device 29 by the transport device 27. Next, the second substrate 15 is transported from the first transition device 29 to the release agent coating device 41 by the transport device 51.

FIG. 5(b) is a diagram showing an example of applying the mold release agent (step S104) shown in FIG. 4. The substrate processing method includes step S<b>104 of applying a liquid release agent 411 to the first main surface 16 of the second substrate 15 using the release agent coating device 41 . The release agent coating device 41 includes, for example, a table 415 and a nozzle 416, as shown in FIG. 5(b). Table 415 supports second substrate 15 from below, with first main surface 16 of second substrate 15 facing upward. The nozzle 416 discharges the liquid mold release agent 411 from above the second substrate 15 held on the table 415 .

The method for applying the mold release agent 411 is, for example, a spray coating method, in which the mold release agent 411 is sprayed in a mist form from a nozzle 416 to apply the mold release agent 411 to the second substrate 15 . As the mold release agent 411, for example, a fluorine-based mold release agent is used. While applying the mold release agent 411, the second substrate 15 may be rotated together with the table 415. The method for applying the mold release agent 411 is not limited to the spray coating method, and may be, for example, a spin coating method, a screen printing method, a roll coating method, a die coating method, or the like. After the second substrate 15 is coated with a mold release agent 411, it is transported from the mold release agent application device 41 to the first transition device 29 by the transport device 51.

FIG. 5C is a diagram illustrating an example of reversing the second substrate illustrated in FIG. 4 (step S105). The substrate processing method includes step S<b>105 of inverting the second substrate 15 upside down using the inverting device 290 of the first transition device 29 . The reversing device 290 includes, for example, a holding mechanism 291 that holds the second substrate 15 and a rotation mechanism 292 that rotates the holding mechanism 291, as shown in FIG. 5(c). The rotation mechanism 292 turns the second substrate 15 upside down by rotating the holding mechanism 291 by 180 degrees.

The second substrate 15 changes from a state in which the first main surface 16 faces upward to a state in which the first main surface 16 faces downward as shown in FIG. 5(c). Thereafter, the second substrate 15 is transported from the first transition device 29 to the stacking device 42 by the transport device 51, and is subjected to stacking with the first substrate 10 (step S106). Note that although the reversing of the second substrate 15 is performed by the reversing device 290 of the first transition device 29 in this embodiment, it may also be performed by the reversing device 710 of the second transition device 71.

FIG. 6A is a diagram showing an example of lamination (step S106) and solidification (step S107) shown in FIG. 4. The substrate processing method includes step S106 of laminating the first substrate 10 and the second substrate 15 using the laminating apparatus 42. As shown in FIG. 6A, the laminating device 42 places the first main surface 11 of the first substrate 10 and the first main surface 16 of the second substrate 15 facing each other, and deposits the first The substrate 10 and the second substrate 15 are laminated. The planarizing agent 401 deforms along the first main surface 11 of the first substrate 10 and forms an uneven surface on the first substrate 10 side. Furthermore, the flattening agent 401 deforms along the first main surface 16 of the second substrate 15 to form a flat surface on the second substrate 15 side. A mold release agent 411 has been evenly applied to the first main surface 16 of the second substrate 15 .

Note that the lamination device 42 may laminate the first substrate 10 and the second substrate 15 under reduced pressure, which is lower than atmospheric pressure. Compared to laminating under atmospheric pressure, air bubbles can be prevented from being trapped. Further, the laminating device 42 may gradually laminate the first substrate 10 and the second substrate 15 so that the gap between the first substrate 10 and the second substrate 15 gradually disappears from one end to the other end. good. Since the stacking is performed while expelling the gas between the first substrate 10 and the second substrate 15, air bubbles can be prevented from being trapped. Further, the laminating device 42 may gradually laminate the first substrate 10 and the second substrate 15 so that the gap between the first substrate 10 and the second substrate 15 gradually disappears from the center toward the outer periphery. . In this case as well, since the stacking is performed while expelling the gas between the first substrate 10 and the second substrate 15, it is possible to suppress air bubbles from being trapped.

The laminating device 42 includes, for example, a first holding part 421 and a second holding part 422, as shown in FIG. 6(a). The first holding part 421 holds the first substrate 10 from the side opposite to the planarizing agent 401. Contact between the flattening agent 401 and the first holding part 421 can be suppressed, and staining of the first holding part 421 by the flattening agent 401 can be suppressed. Further, the second holding part 422 holds the second substrate 15 from the side opposite to the planarizing agent 401. Contact between the flattening agent 401 and the second holding part 422 can be suppressed, and staining of the second holding part 422 by the flattening agent 401 can be suppressed.

The substrate processing method includes step S107 of forming a planarization layer 402 by solidifying the liquid planarization agent 401 in a state where the first substrate 10 and the second substrate 15 are laminated using the solidification device 43. Since the flattening agent 401 is an ultraviolet curing resin in this embodiment, the solidifying device 43 has an ultraviolet irradiator 431 as shown in FIG. 6(a). The ultraviolet irradiator 431 cures the planarizing agent 401 by irradiating the planarizing agent 401 with ultraviolet rays. The uneven surface of the planarizing agent 401 on the first substrate 10 side is hardened, and the flat surface of the planarizing agent 401 on the second substrate 15 side is hardened. A flattening layer 402 is formed by the hardened flattening agent 401.

Note that, as described above, the flattening agent 401 is not limited to ultraviolet curable resin. The flattening agent 401 may be a thermosetting resin or a thermoplastic resin. Thermosetting resins are cured by heating. Additionally, thermoplastic resin undergoes a phase transition from liquid to solid upon cooling. Solidification includes hardening by condensation or addition reactions and phase transition from liquid to solid by cooling.

As shown in FIG. 6(a), the solidifying device 43 flattens the first substrate 10 and the second substrate 15 while holding the first substrate 10 and the second substrate 15 by the first holding section 421 and the second holding section 422 of the laminating device 42. The agent 401 is solidified. For example, the ultraviolet irradiator 431 irradiates the planarizing agent 401 with ultraviolet rays via the second holding part 422 and the second substrate 15. The second holding part 422 and the second substrate 15 are made of a transparent material that transmits ultraviolet rays. Since the first substrate 10 and the second substrate 15 can be held by the laminating device 42 when the planarizing agent 401 is solidified, the laminating device 42 and the solidifying device 43 can use common members, and the substrate processing system 1 can be Miniaturization can be achieved.

FIG. 6(b) is a diagram showing an example of peeling (step S108) shown in FIG. 4. The substrate processing method includes a step S108 in which the first substrate 10 and the planarization layer 402 are peeled off from the second substrate 15 using the peeling device 44. The peeling device 44 includes a first holding section 441 that holds the first substrate 10 and a second holding section 442 that holds the second substrate 15. The peeling device 44 may further include a blade that forms a peeling starting point between the planarization layer 402 and the second substrate 15. The planarization layer 402 and the second substrate 15 are gradually peeled off from the starting point of separation. Thereafter, as shown in FIG. 6(b), a uniform gap is formed between the planarization layer 402 and the second substrate 15.

According to this embodiment, the mold release agent 411 is applied to the first main surface 16 of the second substrate 15 before the first substrate 10 and the second substrate 15 are laminated. Since the layer of mold release agent 411 is formed between the planarization layer 402 and the second substrate 15, the planarization layer 402 and the second substrate 15 can be smoothly separated. The force required for peeling can be reduced, damage to the second substrate 15 can be suppressed, and the second substrate 15 can be reused. Furthermore, since the force required for peeling can be reduced, damage to the first substrate 10 can also be suppressed.

After the first substrate 10 and the second substrate 15 are separated, the first substrate 10 is transferred from the separation device 44 to the second transition device 71 by the transfer device 51, and subjected to step S201 shown in FIG. 7. On the other hand, after the first substrate 10 and the second substrate 15 are separated, the second substrate 15 is transferred from the separation device 44 to the third cleaning device 49 by the transfer device 51, and subjected to step S301 shown in FIG. .

Note that although the reversing of the second substrate 15 is performed by the reversing device 290 of the first transition device 29 in this embodiment, it may also be performed by the reversing device 710 of the second transition device 71.

FIG. 7 is a flowchart showing another part of the substrate processing method according to one embodiment. Steps S201 to S211 shown in FIG. 7 are performed under the control of the control device 9 after the first substrate 10 and the second substrate 15 are separated (step S108 in FIG. 4). Steps S201 to S211 shown in FIG. 7 are processing steps for the first substrate 10.

FIG. 8A is a diagram showing an example of the first reversal (step S201) shown in FIG. 7. The substrate processing method includes a step S201 of inverting the first substrate 10 upside down using the inverting device 710 of the second transition device 71. The reversing device 710 includes, for example, a holding mechanism 711 that holds the first substrate 10 and a rotation mechanism 712 that rotates the holding mechanism 711, as shown in FIG. 8(a). The rotation mechanism 712 turns the first substrate 10 upside down by rotating the holding mechanism 711 by 180 degrees. The first substrate 10 changes from a state with the planarization layer 402 facing upward to a state with the planarization layer 402 facing down as shown in FIG. 8(a). Thereafter, the first substrate 10 is transported from the second transition device 71 to the grinding device 8 by the transport robot 72.

FIG. 8(b) is a diagram showing an example of grinding (step S202) of the second main surface shown in FIG. The substrate processing method includes step S<b>202 of grinding the second main surface 12 of the first substrate 10 using the grinding device 8 . Substrate chucks 82A, 82C hold the flat surface of planarization layer 402 from below with second main surface 12 facing upward. The grinding device 8 rotates the first substrate 10 together with the substrate chucks 82A, 82C, rotates and lowers the grinding wheel 84A disposed above the substrate chucks 82A, 82C, and lowers the second main surface 12 of the first substrate 10. to grind. The second main surface 12 of the first substrate 10 can be ground parallel to the flat surface of the planarization layer 402 . Therefore, the flatness of the second main surface 12 after grinding can be improved. At the end of the grinding, a damaged layer 14 is formed on the second main surface 12 of the first substrate 10 due to contact with the grindstone 84A. Thereafter, the first substrate 10 is transported from the grinding device 8 to the second transition device 71 by the transport robot 72.

FIG. 8C is a diagram showing an example of the second reversal (step S203) shown in FIG. 7. The substrate processing method includes a step S203 of inverting the first substrate 10 upside down by the inverting device 710 of the second transition device 71. The first substrate 10 changes from a state with the planarization layer 402 facing downward to a state with the planarization layer 402 facing upward as shown in FIG. 8(c). Thereafter, the first substrate 10 is transported from the second transition device 71 to the second cleaning device 46 by the transport device 51.

FIG. 9A is a diagram showing an example of cleaning the second main surface (step S204) shown in FIG. The substrate processing method includes a step S204 in which the second main surface 12 is cleaned by the second cleaning device 46. In this step S204, grinding debris generated during the grinding of the second main surface 12 (step S202) is washed away from the second main surface 12. In this step S204, in addition to the second main surface 12 of the first substrate 10, the flat surface of the planarization layer 402 may be cleaned. The second cleaning device 46 includes a chuck 461, a lower surface brush 462, and an upper surface brush 463, as shown in FIG. 9(a). The chuck 461 holds the outer peripheral portion of the first substrate 10 with the planarization layer 402 facing upward. The lower surface brush 462 scrubs and cleans the second main surface 12 of the first substrate 10 . On the other hand, the upper surface brush 463 scrubs and cleans the flat surface of the planarization layer 402.

As the lower surface brush 462 and the upper surface brush 463, disk brushes are used in this embodiment, but roll brushes may also be used. Also, a sponge or the like may be used instead of a brush. In any case, grinding debris attached to the second main surface 12 of the first substrate 10 can be removed.

The cleaned first substrate 10 is transported from the second cleaning device 46 to the second transition device 71 by the transport device 51. Thereafter, the first substrate 10 is transported from the second transition device 71 to the grinding device 8 by the transport robot 72.

Note that the order of the second inversion (step S203) and the cleaning of the second main surface (step S204) may be reversed. That is, after cleaning the second main surface (step S204), the second inversion (step S203) may be performed. After the second inversion (step S203) and cleaning of the second main surface (step S204), the planarization layer may be ground (step S205).

FIG. 9B is a diagram showing an example of grinding the planarization layer (step S205) shown in FIG. 7. The substrate processing method includes step S205 of grinding the planarization layer 402 using the grinding device 8. The substrate chucks 82B and 82D hold the first substrate 10 from below with the planarization layer 402 facing upward. The grinding device 8 rotates the first substrate 10 together with the substrate chucks 82B and 82D, and rotates and lowers the grindstone 84B disposed above the substrate chucks 82B and 82D, thereby grinding the flattened layer.

FIG. 9C is a diagram illustrating an example of grinding the first main surface (step S206) illustrated in FIG. The substrate processing method includes a step S<b>206 of grinding the first main surface 11 of the first substrate 10 using the grinding device 8 . The substrate chucks 82B and 82D hold the second main surface 12, which is a flat surface, from below, with the first main surface 11 facing upward. The grinding device 8 rotates the first substrate 10 together with the substrate chucks 82B and 82D, rotates and lowers the grindstone 84B disposed above the substrate chucks 82B and 82D, and grinds the first main surface 11 of the first substrate 10. to grind. The first main surface 11 can be ground parallel to the second main surface 12, which is a flat surface. Therefore, the flatness of the first main surface 11 after grinding can be improved. At the end of the grinding, a damaged layer 13 is formed on the first main surface 11 due to contact with the grindstone 84B. Thereafter, the first substrate 10 is transported from the grinding device 8 to the second transition device 71 by the transport robot 72. Subsequently, the first substrate 10 is transported from the second transition device 71 to the first cleaning device 45 by the transport device 51.

FIG. 10A is a diagram illustrating an example of cleaning the first main surface (step S207) illustrated in FIG. The substrate processing method includes a step S207 in which the first main surface 11 is cleaned by the first cleaning device 45. In this step S207, grinding debris generated during the grinding of the first main surface 11 (step S206) is washed away from the first main surface 11. In this step S207, in addition to the first main surface 11, the second main surface 12 may be cleaned. The first cleaning device 45 includes a chuck 451, a lower surface brush 452, and an upper surface brush 453, as shown in FIG. 10(a). The chuck 451 holds the outer peripheral portion of the first substrate 10 with the first main surface 11 facing upward. The lower surface brush 452 scrubs and cleans the second main surface 12 of the first substrate 10 . On the other hand, the upper surface brush 453 scrubs and cleans the first main surface 11 of the first substrate 10 .

As the lower surface brush 452 and the upper surface brush 453, disk brushes are used in this embodiment, but roll brushes may be used. Also, a sponge or the like may be used instead of a brush. In any case, grinding debris attached to the first main surface 11 of the first substrate 10 can be removed. The cleaned first substrate 10 is transported from the first cleaning device 45 to the first etching device 47 by the transport device 51.

FIG. 10(b) is a diagram showing an example of etching (step S208) of the first main surface shown in FIG. The substrate processing method includes a step S208 in which the first main surface 11 is etched by the first etching device 47. Damaged layer 13 formed on first main surface 11 can be removed. The first etching device 47 has a chuck 471, an upper surface nozzle 472, and a lower surface nozzle 473, as shown in FIG. 10(b). The chuck 471 holds the outer peripheral portion of the first substrate 10 with the first main surface 11 facing upward.

The upper surface nozzle 472 supplies the etching liquid L1 to the first main surface 11 of the first substrate 10. As the etching solution L1, for example, an acidic or alkaline chemical solution is used. The etching liquid L1 wets and spreads over the entire first main surface 11 of the first substrate 10 due to the centrifugal force of the first substrate 10 rotating together with the chuck 471.

On the other hand, the lower surface nozzle 473 supplies the second main surface 12 of the first substrate 10 with a guard liquid L2 that restricts the etching liquid L1 from going around. As the guard liquid L2, for example, DIW (Deionized Water) is used. The guard liquid L2 wets and spreads over the entire second main surface 12 of the first substrate 10 due to the centrifugal force of the first substrate 10 rotating together with the chuck 471. After drying, the first substrate 10 from which the damaged layer 13 has been removed is transported from the first etching device 47 to the first transition device 29 by the transport device 51.

FIG. 10C is a diagram showing an example of the third reversal (step S209) shown in FIG. 7. The substrate processing method includes a step S209 of inverting the first substrate 10 upside down using the inverting device 290 of the first transition device 29. The first substrate 10 changes from a state in which the first main surface 11 faces upward to a state in which the first main surface 11 faces downward as shown in FIG. 10(c). Thereafter, the first substrate 10 is transported from the first transition device 29 to the second etching device 48 by the transport device 51.

Note that although the third reversal (step S209) is performed by the reversing device 290 of the first transition device 29 in this embodiment, it may be performed by the reversing device 710 of the second transition device 71. Further, the first reversal (step S201) and the second reversal (step S203) are performed by the reversing device 710 of the second transition device 71 in this embodiment, but are performed by the reversing device 290 of the first transition device 29. May be executed.

FIG. 11A is a diagram showing an example of etching (step S210) of the second main surface shown in FIG. FIG. 11(b) is a diagram showing an example of the first substrate obtained by the etching (step S210). The substrate processing method includes step S210 of etching the second main surface 12 by the second etching device 48. Damaged layer 14 formed on second main surface 12 can be removed. The second etching device 48 has a chuck 481, an upper surface nozzle 482, and a lower surface nozzle 483, as shown in FIG. 11(a). The chuck 481 holds the outer peripheral portion of the first substrate 10 with the second main surface 12 facing upward.

The upper surface nozzle 482 supplies the etching liquid L3 to the second main surface 12 of the first substrate 10. As the etching solution L3, for example, an acidic or alkaline chemical solution is used. The etching liquid L3 wets and spreads over the entire second main surface 12 of the first substrate 10 due to the centrifugal force of the first substrate 10 rotating together with the chuck 481.

On the other hand, the lower surface nozzle 483 supplies the guard liquid L4 to the first main surface 11 of the first substrate 10 to restrict the etching liquid L3 from going around. As the guard liquid L4, for example, DIW (Deionized Water) is used. The guard liquid L4 wets and spreads over the entire first main surface 11 of the first substrate 10 due to the centrifugal force of the first substrate 10 rotating together with the chuck 481.

After drying, the first substrate 10 from which the damaged layer 14 has been removed is transported from the second etching device 48 to the first transition device 29 by the transport device 51. Next, the first substrate 10 is transported by the transport device 27 from the first transition device 29 to the second storage section C2 placed on the second mounting section 22.

The substrate processing method includes a step S211 of accommodating the first substrate 10 in the second accommodating part C2 placed on the second holder 22. Through this step S211, the processing of the first substrate 10 is completed. As shown in FIG. 11(b), the first substrate 10 has a first main surface 11 that is a flat surface and a second main surface 12 that is a flat surface. There is no damaged layer 13 on the first main surface 11, and there is no damaged layer 14 on the second main surface 12.

FIG. 12 is a flowchart illustrating the remainder of the substrate processing method according to one embodiment. Steps S301 to S302 shown in FIG. 12 are performed under the control of the control device 9 after the first substrate 10 and the second substrate 15 are separated (step S108 in FIG. 4). Steps S301 to S302 shown in FIG. 12 are processing steps for the second substrate 15.

FIG. 13A is a diagram illustrating an example of cleaning the second substrate (step S301) illustrated in FIG. 12. FIG. 13(b) is a diagram showing an example of the second substrate obtained by the cleaning (step S301). The substrate processing method includes a step S301 in which the second substrate 15 is cleaned by the third cleaning device 49. The third cleaning device 49 has an ultraviolet irradiator 491, as shown in FIG. 13(a).

The ultraviolet irradiator 491 decomposes and removes the planarizing agent 401 and mold release agent 411 remaining on the first main surface 16 by irradiating the first main surface 16 of the second substrate 15 with ultraviolet rays. The wavelength of the ultraviolet rays from the ultraviolet irradiator 491 of the third cleaning device 49 is shorter than the wavelength of the ultraviolet rays from the ultraviolet irradiator 431 of the solidifying device 43 . Because it irradiates high-energy ultraviolet rays, it can decompose organic matter.

The cleaned second substrate 15 is transported from the third cleaning device 49 to the first transition device 29 by the transport device 51. Next, the second substrate 15 is transported from the first transition device 29 to the third storage section C3 placed on the third mounting section 23 by the transport device 27.

The substrate processing method includes step S302 of accommodating the second substrate 15 in the third accommodating part C3 placed on the third holder 23. Through this step S302, the processing of the second substrate 15 is completed. The second substrate 15 is used again for lamination with another first substrate 10. Since the second substrate 15 is reused, there is no waste.

Although the third loading section 23 is provided at the carry-in/out station 2 in this embodiment, it may be provided at the first processing station 3 similarly to the stacking device 42 and the like.

Although the embodiments of the substrate processing system and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments and the like. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

The first substrate 10 is not limited to a semiconductor substrate such as a silicon wafer, but may be a glass substrate or the like. The same applies to the second substrate 15.

In the above embodiment, as shown in FIG. 7, the etching of the first main surface 11 (step S208) and the etching of the second main surface 12 (step S210) are performed separately, but they may be performed simultaneously. For example, in FIG. 10(b), the lower surface nozzle 473 may supply the etching liquid L3 shown in FIG. 11(b) to the second main surface 12 instead of the guard liquid L2. Damaged layer 14 formed on second main surface 12 and damaged layer 13 formed on first main surface 11 can be removed simultaneously. Since the number of steps can be reduced, the number of first substrates 10 processed per unit time can be increased. Furthermore, since the number of etching devices can be reduced, the manufacturing cost of the substrate processing system 1 can be reduced. Note that the etching apparatus that simultaneously etches the first main surface 11 and the second main surface 12 may be an apparatus that immerses the entire first substrate 10 in an etching solution.

1 Substrate processing system 8 Grinding device 10 First substrate 11 First main surface 12 Second main surface 15 Second substrate 16 First main surface 17 Second main surface 21 First mounting section 22 Second mounting section 40 Flattening Agent coating device 401 Flattening agent 402 Flattening layer 41 Mold release agent coating device 411 Mold release agent 42 Lamination device 421 First holding section 422 Second holding section 43 Solidifying device 44 Peeling device C1 First storage section C2 Second storage section

Claims (15)

A laminating apparatus for laminating the first substrate and the second substrate with a liquid flattening agent interposed between the uneven surface of the first substrate and the flat surface of the second substrate, the laminating apparatus comprising: a laminating device having a first holding part that holds the second substrate from the side opposite to the planarizing agent; and a second holding part that holds the second substrate from the side opposite to the planarizing agent;
a solidifying device that forms a flattening layer by solidifying the liquid flattening agent in a state where the first substrate and the second substrate are stacked;
a peeling device that peels off the first substrate, the planarization layer, and the second substrate;
a grinding device that grinds a surface of the first substrate opposite to the uneven surface while holding the first substrate via the planarization layer;
a cleaning device that cleans the second substrate after separating the first substrate, the planarization layer, and the second substrate;
Equipped with
The cleaning device includes a first cleaning device that cleans the uneven surface of the first substrate after grinding the uneven surface of the first substrate, and a first cleaning device that cleans the uneven surface of the first substrate after grinding the opposite surface of the first substrate. a second cleaning device that cleans the opposite surface of one substrate; and a third cleaning device that cleans the second substrate after peeling off the first substrate, the planarization layer, and the second substrate. , substrate processing system. A laminating apparatus for laminating the first substrate and the second substrate with a liquid flattening agent interposed between the uneven surface of the first substrate and the flat surface of the second substrate, the laminating apparatus comprising: a laminating device having a first holding part that holds the second substrate from the side opposite to the planarizing agent; and a second holding part that holds the second substrate from the side opposite to the planarizing agent;
a solidifying device that forms a flattening layer by solidifying the liquid flattening agent in a state where the first substrate and the second substrate are stacked;
a peeling device that peels off the first substrate, the planarization layer, and the second substrate;
a grinding device that grinds a surface of the first substrate opposite to the uneven surface while holding the first substrate via the planarization layer;
a cleaning device that cleans the second substrate after separating the first substrate, the planarization layer, and the second substrate;
Equipped with
The solidification device includes a first ultraviolet irradiator that irradiates the flattening agent with a first ultraviolet ray,
The cleaning device includes a second ultraviolet irradiator that irradiates the second substrate with a second ultraviolet ray,
A substrate processing system , wherein the wavelength of the second ultraviolet ray is shorter than the wavelength of the first ultraviolet ray . A laminating apparatus for laminating the first substrate and the second substrate with a liquid flattening agent interposed between the uneven surface of the first substrate and the flat surface of the second substrate, the laminating apparatus comprising: a laminating device having a first holding part that holds the second substrate from the side opposite to the planarizing agent; and a second holding part that holds the second substrate from the side opposite to the planarizing agent;
a solidifying device that forms a flattening layer by solidifying the liquid flattening agent in a state where the first substrate and the second substrate are stacked;
a peeling device that peels off the first substrate, the planarization layer, and the second substrate;
a grinding device that grinds a surface of the first substrate opposite to the uneven surface while holding the first substrate via the planarization layer;
a cleaning device that cleans the second substrate after separating the first substrate, the planarization layer, and the second substrate;
a first mounting section on which a first storage section for accommodating the first substrate before being laminated with the second substrate is placed;
a second holding part on which a second holding part for accommodating the first substrate after being ground by the grinding device is placed;
Equipped with
The first accommodating part and the second accommodating part have different structures, the first accommodating part does not have a lid for opening and closing the accommodating space that accommodates the first substrate, and the second accommodating part does not have a lid for opening and closing the accommodating space that accommodates the first substrate. A substrate processing system having a lid. comprising an inversion device that inverts the first substrate upside down;
The grinding device grinds the opposite surface of the first substrate and the uneven surface of the first substrate in this order,
Any one of claims 1 to 3 , wherein the inverting device inverts the first substrate vertically after grinding the opposite surface of the first substrate and before grinding the uneven surface of the first substrate. The substrate processing system according to item 1. The solidifying device solidifies the planarizing agent while the first substrate and the second substrate are held by the first holding portion and the second holding portion of the laminating device. 4. The substrate processing system according to any one of 4 . 6. The method according to claim 1, further comprising a release agent coating device that applies a release agent to the flat surface of the second substrate before laminating the first substrate and the second substrate. substrate processing system. 7. The substrate processing system according to claim 1, further comprising an etching device that etches the surface of the first substrate ground by the grinding device after the first substrate is ground by the grinding device. The substrate processing system according to claim 1, wherein the first substrate is a semiconductor substrate and the second substrate is a glass substrate. A step of stacking the first substrate and the second substrate via a liquid planarizing agent, with the uneven surface of the first substrate facing the flat surface of the second substrate, holding the second substrate with a first holding part from the side opposite to the planarizing agent, and holding the second substrate with a second holding part from the side opposite to the planarizing agent;
forming a planarization layer by solidifying the liquid planarization agent in a state where the first substrate and the second substrate are stacked;
a step of peeling off the first substrate, the planarization layer, and the second substrate;
Grinding a surface of the first substrate opposite to the uneven surface while holding the first substrate via the planarization layer;
cleaning the second substrate after separating the first substrate and the planarization layer from the second substrate;
has
The step of forming the planarizing agent includes a step of irradiating the planarizing agent with a first ultraviolet ray,
The step of cleaning the second substrate includes a step of irradiating the second substrate with a second ultraviolet ray,
A substrate processing method , wherein the wavelength of the second ultraviolet ray is shorter than the wavelength of the first ultraviolet ray . A step of stacking the first substrate and the second substrate via a liquid planarizing agent, with the uneven surface of the first substrate facing the flat surface of the second substrate, holding the second substrate with a first holding part from the side opposite to the planarizing agent, and holding the second substrate with a second holding part from the side opposite to the planarizing agent;
forming a planarization layer by solidifying the liquid planarization agent in a state where the first substrate and the second substrate are stacked;
a step of peeling off the first substrate, the planarization layer, and the second substrate;
Grinding a surface of the first substrate opposite to the uneven surface while holding the first substrate via the planarization layer;
cleaning the second substrate after separating the first substrate and the planarization layer from the second substrate;
has
A first accommodating portion that accommodates the first substrate before the stacking step and a second accommodating portion that accommodates the first substrate after the grinding step have different structures,
The first accommodating part does not have a lid that opens and closes the accommodating space that accommodates the first substrate,
The substrate processing method, wherein the second storage section has the lid. The substrate processing method according to claim 9 or 10 , further comprising the step of cleaning the first substrate after grinding the first substrate. After grinding the opposite surface of the first substrate and before grinding the uneven surface of the first substrate, the method further comprises the step of turning the first substrate upside down. Substrate processing method described in section. The solidifying step is performed with the first substrate and the second substrate being held by the first holding part and the second holding part, according to any one of claims 9 to 12 . Substrate processing method. The substrate processing method according to any one of claims 9 to 13 , comprising the step of applying a mold release agent to the flat surface of the second substrate before laminating the first substrate and the second substrate. . 15. The substrate processing method according to claim 9 , further comprising a step of etching the ground surface of the first substrate after the grinding step.

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