JP7345600B2 - Microwave plasma source for spatial plasma atomic layer deposition (PE-ALD) processing tools - Google Patents

Description

[0001] Embodiments of the present disclosure generally relate to apparatus for plasma substrate processing. More specifically, embodiments of the present disclosure relate to modular microwave plasma sources for use in processing chambers such as spatial atomic layer deposition batch processors.

[0002] Atomic layer deposition (ALD) and plasma ALD (PEALD) are deposition techniques that provide control of film thickness and conformality in high aspect ratio structures. As device dimensions continue to shrink in the semiconductor industry, interest and applications in using ALD/PEALD are increasing. In some cases, only PEALD can meet the desired film thickness and conformality specifications.

[0003] The formation of semiconductor devices typically occurs in a substrate processing platform that includes multiple chambers. In some cases, the purpose of a multi-chamber processing platform or cluster tool is to sequentially perform two or more processes on a substrate in a controlled environment. However, a multi-chamber processing platform may only be able to perform a single processing step on a substrate, and the additional chambers are intended to maximize the speed at which the substrate is processed by the platform. In the latter case, the process performed on the substrates is typically a batch process, where a relatively large number of substrates, such as 25 or 50, are processed simultaneously in a given chamber. Batch processing is used in processes that are too time consuming to perform on individual substrates in an economically viable manner, such as atomic layer deposition (ALD) processes and some chemical vapor deposition (CVD) processes. , is particularly useful.

[0004] PEALD tools typically use capacitive plasma sources in the RF/VHF frequency range up to tens of MHz. These plasmas have moderate densities and can have relatively high ion energies. Alternatively, using microwave fields at frequencies in the GHz range in certain resonant or wave-propagating electromagnetic modes, plasmas of very high charge and radical density and very low ion energies can be generated. Plasma densities can range from 10 ¹² /cm ³ or higher, and ion energies can be as low as about 5-10 eV. The above plasma characteristics are becoming increasingly important in damage-free processing of modern silicon devices.

[0005] One of the challenges of microwave plasma is controlling the stability and uniformity of the discharge. In the microwave range, the wavelength of the electromagnetic (EM) field is typically shorter than the substrate being processed, and the wave-plasma interaction can be very strong. For this reason, microwave plasmas are prone to instability, are highly spatially non-uniform, can be localized with power input(s) alone, and do not easily spread over larger processing wafers/substrates.

[0006] Accordingly, there is a need in the art for improved apparatus and methods for forming microwave plasmas.

[0007] One or more embodiments of the present disclosure provide a powered electrode having a first end and a second end defining a length and having an axis extending along the length of the powered electrode. A plasma source assembly comprising: The power supply electrode has a width. A ground electrode is on the first side of the power supply electrode. The ground electrode is spaced a distance from the power supply electrode. A dielectric is on the second side of the feed electrode. A dielectric and a ground electrode surround the feed electrode. The dielectric has an inner surface adjacent to the feed electrode and an outer surface opposite the inner surface. A first microwave generator is electrically coupled to the first end of the powered electrode via a first feed. A second microwave generator is electrically coupled to the second end of the powered electrode via a second feed.

[0008] Additional embodiments of the present disclosure provide a plasma source comprising a flat powered electrode having a first end and a second end and having an axis extending along a longitudinal axis of the plasma source assembly. Target assembly. The power supply electrode has a width. A ground electrode is on the first side of the power supply electrode. The ground electrode is spaced from the powered electrode by a second dielectric and includes a gas inlet. A dielectric is on the second side of the feed electrode. A dielectric and a second dielectric surround the feed electrode and prevent electrical contact between the feed electrode and the ground electrode. The dielectric has a gas channel extending along a longitudinal axis of the plasma source assembly. The gas inlet is in fluid communication with one or more plenums extending along the longitudinal axis. The one or more plenums are in fluid communication with the gas channels via one or more gas conduits. A first microwave generator is electrically coupled to the first end of the powered electrode via the first feed. The first microwave generator operates at a first frequency. A second microwave generator is electrically coupled to the second end of the powered electrode via a second feed. A second microwave generator operates at a second frequency. The first frequency and the second frequency are in a range of about 900 MHz to about 930 MHz or in a range of about 2.4 GHz to about 2.5 GHz, and the first frequency and the second frequency are different.

[0009] Further embodiments of the present disclosure are directed to methods of providing plasma. First microwave power is provided from a first microwave generator to a first end of the powered electrode. A second microwave power is provided from a second microwave generator to a second end of the powered electrode. The first microwave power and the second microwave power operate at frequencies in the range of about 900 MHz to about 930 MHz or in the range of about 2.4 GHz to about 2.5 GHz. The feed electrode is surrounded by a dielectric and a ground electrode on a first side of the feed electrode. A plasma is formed adjacent to the dielectric on a second side of the feed electrode that is different from the first side.

[0010] Additional embodiments of the present disclosure are directed to a plasma source assembly that includes a powered electrode having a first end and a second end defining a length. The feed electrode has an axis extending along the length of the feed electrode. The power supply electrode has a width. A ground electrode is on the first side of the power supply electrode. The ground electrode is spaced a distance from the power supply electrode. A dielectric is on the second side of the feed electrode. A dielectric and a ground electrode surround the feed electrode. The dielectric has an inner surface adjacent to the feed electrode and an outer surface opposite the inner surface. The first feed is electrically coupled to the powered electrode and the second feed is electrically coupled to the powered electrode. The first feed is electrically coupled to the first microwave generator and the second feed is electrically coupled to the dummy load.

[0011] In order that the features of the embodiments of the present disclosure described above may be understood in detail, the embodiments of the present disclosure summarized above will be described more specifically with reference to the embodiments, some of which are illustrated in the accompanying drawings. Explain in detail. However, the accompanying drawings depict only typical embodiments of the disclosure and therefore should not be considered as limiting the scope of the embodiments; the disclosure may also tolerate other equally valid embodiments. Please note that

1 is a schematic cross-sectional view of a substrate processing system according to one or more embodiments of the present disclosure. FIG. 1 is a perspective view of a substrate processing system according to one or more embodiments of the present disclosure. FIG. 1 is a schematic diagram illustrating a substrate processing system according to one or more embodiments of the present disclosure. FIG. 1 is a schematic illustration of a front portion of a gas distribution assembly according to one or more embodiments of the present disclosure; FIG. 1 is a schematic diagram illustrating a processing chamber in accordance with one or more embodiments of the present disclosure. FIG. FIG. 2 is a schematic diagram showing electrical coupling in a stripline fed electrode plasma source. FIG. 2 is a schematic diagram showing electrical coupling in a stripline fed electrode plasma source. FIG. 2 is a schematic diagram showing electrical coupling in a stripline fed electrode plasma source. FIG. 2 is a schematic diagram illustrating the electrical coupling in a stripline type feed electrode plasma source as a function of separating the feed electrode and the installed electrode. FIG. 2 is a schematic diagram illustrating the electrical coupling in a stripline type feed electrode plasma source as a function of separating the feed electrode and the installed electrode. 1 is a schematic diagram illustrating the electrical coupling in a stripline fed electrode plasma source as a function of the cross-sectional width of the fed electrode; FIG. 1 is a schematic diagram illustrating the electrical coupling in a stripline fed electrode plasma source as a function of the cross-sectional width of the fed electrode; FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 1 is an isometric view of a plasma source assembly according to one or more embodiments of the present disclosure. FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 9 is a cross-sectional view of the plasma source assembly of FIG. 8 taken along line 10-10'; FIG. 1 is a schematic bottom view of a plasma source assembly according to one or more embodiments of the present disclosure. FIG. 11 is a detailed diagram showing region 11 in FIG. 10. FIG. 11 is a detailed view showing region 12 of FIG. 10. FIG. 11 is a detailed diagram showing region 13 of FIG. 10. FIG. 2 is a partial schematic diagram illustrating a gas inlet plate and recess of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 9 is a cross-sectional view of the plasma source assembly of FIG. 8 taken along line 15-15'; FIG. 9 is a cross-sectional view of the plasma source assembly of FIG. 8 taken along line 16-16'; FIG. 9 is a cross-sectional view of the plasma source assembly of FIG. 8 taken along line 16-16' in accordance with one or more embodiments. FIG. 9 is a cross-sectional view of the plasma source assembly of FIG. 8 taken along line 17-17'; FIG. 2 is a schematic diagram illustrating gas flow paths through a plasma source assembly in accordance with one or more embodiments of the present disclosure. FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 22B is a schematic cross-sectional view of the plasma source assembly of FIG. 22A with the feed moving toward the center of the length of the powered electrode, according to one or more embodiments of the present disclosure. FIG. 1 is a schematic cross-sectional view of a plasma source assembly in accordance with one or more embodiments of the present disclosure; FIG. 23B is a schematic cross-sectional view of the plasma source assembly of FIG. 23A with the feed moving toward the center of the length of the powered electrode in accordance with one or more embodiments of the present disclosure; FIG. 1 is a cross-sectional view of a plasma source assembly according to one or more embodiments of the present disclosure. FIG. 2 is a graph showing power as a function of axial position of a feed electrode powered from one end; 2 is a graph showing power as a function of axial position of a feed electrode powered from both ends; FIG. 2 is a schematic diagram showing the plasma generated as a function of power applied to both ends of a powered electrode. FIG. 2 is a schematic diagram showing the plasma generated as a function of power applied to both ends of a powered electrode. FIG. 2 is a schematic diagram showing the plasma generated as a function of power applied to both ends of a powered electrode. 1 is a schematic cross-sectional side view of a plasma source assembly with different plasma couplings according to one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional side view of a plasma source assembly with different plasma couplings according to one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional side view of a plasma source assembly with different plasma couplings according to one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional side view of a plasma source assembly with different plasma couplings according to one or more embodiments of the present disclosure; FIG. 1 is a schematic front view of a plasma source assembly having power electrodes of varying widths in accordance with one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional view of a plasma source assembly with one feed electrically connected to a dummy load in accordance with one or more embodiments of the present disclosure; FIG. 1 is a schematic cross-sectional view of a plasma source assembly with more than two feeds in accordance with one or more embodiments of the present disclosure; FIG.

[0049] Embodiments of the present disclosure provide a substrate processing system for continuous substrate deposition that maximizes throughput and improves processing efficiency. One or more embodiments of the present disclosure are described with respect to a spatial atomic layer deposition chamber. However, those skilled in the art will recognize that this is just one possible configuration and that other processing chambers and plasma source modules can be used.

[0050] As used herein and in the appended claims, the terms "substrate" and "wafer" are used interchangeably and both refer to a surface or portion of a surface on which a process operates. Those skilled in the art will also understand that references to a substrate may refer only to a portion of the substrate, unless the context clearly dictates otherwise. Further, references to deposition on a substrate can refer to both bare substrates and substrates having one or more films or features deposited or formed thereon.

[0051] As used herein and in the appended claims, terms such as "reactive gas," "precursor," and "reactant" are used to mean a gas that includes a species that reacts with a substrate surface. used interchangeably. For example, a first "reactive gas" may simply adsorb to the surface of the substrate and be available for further chemical reaction with a second reactive gas.

[0052] As used herein and in the appended claims, the terms "pie-shaped" and "wedge-shaped" are used interchangeably to describe a body that is a sector of a circle. For example, a wedge-shaped segment can be a small portion of a circular or disc-shaped structure, and multiple wedge-shaped segments can be connected to form a circular body. A sector may be defined as a portion of a circle bounded by two radii of the circle and an intersecting arc. The inner edge of the pie-shaped segment may be pointed or a truncated flat edge, or it may be rounded. In some embodiments, a sector may be defined as a ring or part of a ring.

[0053] The path of the substrate may be perpendicular to the gas port. In some embodiments, each of the gas injector assemblies includes a plurality of elongated gas ports extending in a direction substantially perpendicular to the path traversed by the substrate, and the front surface of the gas distribution assembly is substantially parallel to the platen. It is. As used herein and in the appended claims, the term "substantially perpendicular" means that the general direction of substrate movement is approximately perpendicular to the axis of the gas port (e.g., from approximately 45° to 90°) means along a plane. For wedge-shaped gas ports, the axis of the gas port may be considered a line defined as the midpoint of the width of the port extending along the length of the port.

[0054] FIG. 1 shows a cross-section of a processing chamber 100 that includes a gas distribution assembly 120, also referred to as an injector or injector assembly, and a susceptor assembly 140. Gas distribution assembly 120 is any type of gas delivery device used within a processing chamber. Gas distribution assembly 120 includes a front surface 121 facing susceptor assembly 140 . Front surface 121 may have any number or variety of openings for delivering gas flow toward susceptor assembly 140. Gas distribution assembly 120 also includes a substantially rounded peripheral edge 124 in the illustrated embodiment.

[0055] The particular type of gas distribution assembly 120 used may vary depending on the particular process used. Embodiments of the present disclosure may be used in any type of processing system where the gap between the susceptor and the gas distribution assembly is controlled. Although various types of gas distribution assemblies (e.g., showerheads) may be used, embodiments of the present disclosure may be particularly useful in spatial ALD gas distribution assemblies having multiple substantially parallel gas channels. . The term "substantially parallel" as used herein and in the appended claims means that the long axes of the gas channels extend in the same general direction. There may be some imperfections in the parallelism of the gas channels. The plurality of substantially parallel gas channels include at least one first reactive gas A channel, at least one second reactive gas B channel, at least one purge gas P channel, and/or at least one vacuum V channel. may include channels. Gases flowing from the first reactive gas A channel, the second reactive gas B channel, and the purge gas P channel are directed toward the top surface of the wafer. Some of the gas flow moves horizontally across the surface of the wafer and exits the processing region through the purge gas P channel. The substrate moving from one end of the gas distribution assembly to the other is exposed to each process gas in turn, forming a layer on the substrate surface.

[0056] In some embodiments, gas distribution assembly 120 is a rigid, stationary body made of a single injector unit. In one or more embodiments, gas distribution assembly 120 is comprised of a plurality of individual sectors (eg, injector units 122), as shown in FIG. Either single-piece bodies or multi-sector bodies may be used with the various embodiments of the present disclosure described.

[0057] Susceptor assembly 140 is positioned below gas distribution assembly 120. Susceptor assembly 140 includes a top surface 141 and at least one recess 142 in top surface 141. Susceptor assembly 140 also has a bottom surface 143 and an edge 144. Recess 142 may have any suitable shape and size depending on the shape and size of substrate 60 being processed. In the embodiment shown in FIG. 1, the recess 142 has a flat bottom that supports the bottom of the wafer, but the bottom of the recess can vary. In some embodiments, the recess has a step area around a peripheral edge of the recess that is sized to support a peripheral edge of the wafer. The amount of the peripheral edge of the wafer supported by the step may vary depending on, for example, the thickness of the wafer and the presence of features already present on the backside of the wafer.

[0058] In some embodiments, as shown in FIG. 1, the recess 142 in the top surface 141 of the susceptor assembly 140 is such that the substrate 60 supported in the recess 142 is substantially coplanar with the top surface 141 of the susceptor 140. The size is such that it has an upper surface 61. As used herein and in the appended claims, the term "substantially coplanar" means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar to within ±0.2 mm. In some embodiments, the top surfaces are coplanar to within ±0.15 mm, ±0.10 mm, or ±0.05 mm. The recess 142 of some embodiments supports the wafer such that the inner diameter (ID) of the wafer is located within a range of about 170 mm to about 185 mm from the center (axis of rotation) of the susceptor. In some embodiments, the recess 142 supports the wafer such that the outer diameter (OD) of the wafer is located in a range of about 470 mm to about 485 mm from the center (axis of rotation) of the susceptor.

[0059] The susceptor assembly 140 of FIG. 1 includes a post 160 that allows the susceptor assembly 140 to be raised, lowered, and rotated. The susceptor assembly may include a heater, or gas line, or electrical components within the center of the post 160. Post 160 may be the primary means of increasing or decreasing the gap between susceptor assembly 140 and gas distribution assembly 120 and moving susceptor assembly 140 into position. Susceptor assembly 140 may also include a fine adjustment actuator 162 that allows for fine adjustments to susceptor assembly 140 to create a predetermined gap 170 between susceptor assembly 140 and gas distribution assembly 120. In some embodiments, the distance of gap 170 ranges from about 0.1 mm to about 5.0 mm, or from about 0.1 mm to about 3.0 mm, or from about 0.1 mm to about 2.0 mm. , or in a range of about 0.2 mm to about 1.8 mm, or in a range of about 0.3 mm to about 1.7 mm, or in a range of about 0.4 mm to about 1.6 mm, or in a range of about 0.5 mm to about 1.5 mm. or from about 0.6 mm to about 1.4 mm, or from about 0.7 mm to about 1.3 mm, or from about 0.8 mm to about 1.2 mm, or from about 0.9 mm to about 1 .1 mm range, or about 1 mm.

[0060] The illustrated processing chamber 100 is a carousel-type chamber in which a susceptor assembly 140 may hold a plurality of substrates 60. As shown in FIG. 2, gas distribution assembly 120 may include a plurality of individual injector units 122, each injector unit 122 capable of depositing a film on a wafer as the wafer is moved beneath the injector units. The illustrated two pie-shaped injector units 122 are positioned on generally opposite sides of and above the susceptor assembly 140. This number of injector units 122 is shown for illustrative purposes only. It should be understood that more or fewer injector units 122 may be included. In some embodiments, there are a sufficient number of pie-shaped injector units 122 to form a shape that matches the shape of susceptor assembly 140. In some embodiments, each individual pie injector unit 122 can be independently moved, removed, and/or replaced without affecting any of the other injector units 122. For example, one segment may be lifted to allow a robot to access the area between susceptor assembly 140 and gas distribution assembly 120 to load/unload substrate 60.

[0061] A processing chamber with multiple gas injectors can be used to process multiple wafers simultaneously so that the wafers undergo the same process flow. For example, as shown in FIG. 3, processing chamber 100 has four gas injector assemblies and four substrates 60. During processing, substrate 60 may be positioned between injector assemblies 30. A 45° rotation 17 of the susceptor assembly 140 moves each substrate 60 between the gas distribution assemblies 120 into the gas distribution assembly 120 for film deposition, as shown by the dotted circle below the gas distribution assembly 120. do. An additional 45° rotation moves substrate 60 away from injector assembly 30. Using a spatial ALD injector, a film is deposited on the wafer during movement of the wafer relative to the injector assembly. In some embodiments, susceptor assembly 140 rotates in increments to prevent substrate 60 from coming to rest beneath gas distribution assembly 120. The number of substrates 60 and gas distribution assemblies 120 may be the same or different. In some embodiments, as many wafers are processed as there are gas distribution assemblies. In one or more embodiments, the number of wafers processed is a fraction or an integer multiple of the number of gas distribution assemblies. For example, if there are four gas distribution assemblies, 4x wafers are processed, where x is an integer value greater than or equal to one.

[0062] The processing chamber 100 shown in FIG. 3 is merely a depiction of one possible configuration and should not be construed as limiting the scope of the present disclosure. Here, processing chamber 100 includes a plurality of gas distribution assemblies 120. In the illustrated embodiment, there are four gas distribution assemblies (also referred to as injector assemblies 30) evenly spaced around the processing chamber 100. Although the illustrated processing chamber 100 is octagonal, those skilled in the art will appreciate that this is one possible shape and should not be construed as limiting the scope of the present disclosure. Although the illustrated gas distribution assembly 120 is trapezoidal, it may be a single circular component or, as shown in FIG. 2, may be constructed of multiple pie-shaped segments.

[0063] The embodiment shown in FIG. 3 includes an auxiliary chamber, such as a load lock chamber 180 or a buffer station. This chamber 180 is connected to a side of the processing chamber 100, for example to allow loading/unloading of a substrate (also referred to as substrate 60) from the processing chamber 100. A wafer robot may be positioned within chamber 180 to transfer the substrate onto the susceptor.

[0064] Rotation of the carousel (eg, susceptor assembly 140) may be continuous or discontinuous. In continuous processing, the wafer is constantly rotating and is therefore exposed to each injector in turn. In discontinuous processing, the wafer may move to the injector area and stop, then move to the area 84 between the injectors and stop. For example, the carousel may be rotated such that the wafer moves across the injector (or stops adjacent to the injector) from one in-injector area onto the next in-injector area, and the carousel may pause there again. Pauses between injectors allow time for additional processing steps (eg, plasma exposure) between the deposition of each layer.

[0065] FIG. 4 shows a sector or portion of a gas distribution assembly 220, which may also be referred to as an injector unit 122. Injector unit 122 can be used individually or in combination with other injector units. For example, as shown in FIG. 5, four of the injector units 122 of FIG. 4 are combined to form a single gas distribution assembly 220. (The lines separating the four injector units are not shown for clarity.) The injector unit 122 of FIG. Although having both second reactive gas ports 135, injector unit 122 does not require all of these components.

[0066] Referring to both FIGS. 4 and 5, a gas distribution assembly 220 according to one or more embodiments may include multiple sectors (or injector units 122), each sector being the same or different. Gas distribution assembly 220 is positioned within the processing chamber and includes a plurality of elongated gas ports 125, 135, 145 on the front side 121 of gas distribution assembly 220. A plurality of elongate gas ports 125 , 135 , 145 and a vacuum port 155 extend from an area adjacent the inner circumferential edge 123 to an area adjacent the outer circumferential edge 124 of the gas distribution assembly 220 . The illustrated plurality of gas ports include a first reactive gas port 125, a second reactive gas port 135, a vacuum port 145 surrounding each of the first reactive gas ports, and a second reactive gas port and a purge gas port. Includes port 155.

[0067] With reference to the embodiments shown in FIG. 4 or FIG. 5, the ports are described as extending from at least approximately the inner circumferential region to at least approximately the outer circumferential region, but the ports extend from the inner region to the outer region in a non-radial direction. can also be extended. Because vacuum port 145 surrounds reactive gas port 125 and reactive gas port 135, the ports may extend tangentially. In the embodiment shown in FIGS. 4 and 5, the wedge-shaped reactive gas ports 125, 135 are surrounded on all edges, including adjacent to the inner and outer circumferential regions, by vacuum ports 145.

[0068] Referring to FIG. 4, as the substrate moves along path 127, each portion of the substrate surface is exposed to a different reactive gas. To follow path 127 , the substrate connects purge gas port 155 , vacuum port 145 , first reactive gas port 125 , vacuum port 145 , purge gas port 155 , vacuum port 145 , second reactive gas port 135 , and vacuum port 145 be exposed to, or "see" them. Thus, at the end of path 127 shown in FIG. 4, the substrate is exposed to gas flow from first reactive gas port 125 and second reactive gas port 135 to form a layer. Although the illustrated injector unit 122 is a quadrant, it may be larger or smaller. The gas distribution assembly 220 shown in FIG. 5 can be thought of as a combination of the four injector units 122 of FIG. 4 connected in series.

[0069] Injector unit 122 of FIG. 4 shows a gas curtain 150 that separates reactive gases. The term "gas curtain" is used to describe any combination of gas flow or vacuum that separates reactive gases from a mixture. The gas curtain 150 shown in FIG. Department. This combination of gas flow and vacuum may be used to prevent or minimize gas phase reactions between the first and second reactive gases.

[0070] Referring to FIG. 5, the combination of gas flow and vacuum from gas distribution assembly 220 creates separation into multiple processing regions 250. The processing area is roughly defined around the individual reactive gas ports 125, 135 with a gas curtain 150 between them. The embodiment shown in FIG. 5 constitutes eight separate processing regions 250 with eight separate gas curtains 150 between them. The processing chamber may have at least two processing regions. In some embodiments, there are at least 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12 processing regions.

[0071] During processing, the substrate may be exposed to multiple processing regions 250 at any given time. However, in the parts exposed to different processing areas there is a gas curtain separating the two. For example, if the leading edge of the substrate enters the processing region containing the second reactive gas port 135, the central portion of the substrate will be under the gas curtain 150 and the trailing edge of the substrate will enter the processing region containing the second reactive gas port 125. In the processing area containing.

[0072] A factory interface 280, which may be, for example, a load lock chamber, is shown connected to the processing chamber 100. Substrate 60 is shown overlying gas distribution assembly 220 to provide a frame of reference. In many cases, substrate 60 may be located on a susceptor assembly that is held near a front surface 121 of gas distribution assembly 120 (also referred to as a gas distribution plate). Substrate 60 is loaded onto a substrate support or susceptor assembly (see FIG. 3) of processing chamber 100 via factory interface 280. The substrate 60 can be shown positioned within the processing region as it is adjacent to the first reactive gas port 125 and between the two gas curtains 150a, 150b. Rotating substrate 60 along path 127 moves the substrate counterclockwise around processing chamber 100 . Thus, the substrate 60 is exposed from the first processing region 250a to the eighth processing region 250h, including all processing regions therebetween. Using the illustrated gas distribution assembly, in each cycle around the processing chamber, substrate 60 is exposed to four ALD cycles of a first reactive gas and a second reactive gas.

[0073] A conventional ALD sequence for a batch processor such as that of FIG. 5 maintains flows of chemicals A and B, respectively, from spatially separated injectors with a pump/purge section in between. Conventional ALD sequences have starting and ending patterns that can lead to non-uniformity in the deposited film. The inventors have surprisingly discovered that a time-based ALD process performed in a spatial ALD batch processing chamber provides films with higher uniformity. The basic process for exposure to Gas A, no reactive gases and Gas B, no reactive gases is to sweep the substrate under an injector to saturate the surface with chemicals A and B, respectively, and to create a starting pattern in the film. Prevent termination patterns from forming. The inventors surprisingly found that the time-based approach is particularly beneficial when the target film thickness is small (e.g., less than 20 ALD cycles) and the starting and ending patterns have a large impact on within-wafer uniformity performance. I discovered giving. The inventors have also discovered that the reactive processes that produce SiCN, SiCO, and SiCON films, as described herein, cannot be achieved with time-domain processes. The time used to purge the processing chamber causes material to flake off from the substrate surface. Due to the short time under the gas curtain, no delamination occurs in the described spatial ALD process.

[0074] Embodiments of the present disclosure are therefore directed to a processing method that includes a processing chamber 100 having a plurality of processing regions 250a-250h, each processing region separated from an adjacent region by a gas curtain 150. For example, the processing chamber shown in FIG. The number of gas curtains and processing regions within the processing chamber may be any suitable number depending on the gas flow arrangement. The embodiment shown in FIG. 5 has eight gas curtains 150 and eight processing regions 250a-250h. The number of gas curtains generally equals or exceeds the number of treatment zones. For example, if region 250a has no flow of reactive gas and merely functions as a loading area, there are seven processing regions and eight gas curtains in the processing chamber.

[0075] A plurality of substrates 60 are positioned on a substrate support, such as susceptor assembly 140 shown in FIGS. 1 and 2. A plurality of substrates 60 are rotated around the processing area for processing. Generally, gas curtain 150 is engaged (gas flow and vacuum on) throughout the process, including periods when no reactive gases are flowing into the chamber.

[0076] The first reactive gas A flows into one or more processing regions 250, and the inert gas flows into any processing region 250 to which the first reactive gas A does not flow. For example, when the first reactive gas flows into the processing region 250b through the processing region 250h, the inert gas flows into the processing region 250a. Inert gas may flow through first reactive gas port 125 or second reactive gas port 135.

[0077] The flow of inert gas within the processing region may be constant or variable. In some embodiments, the reactive gas is co-flowed with an inert gas. Inert gas acts as a carrier and diluent. Since the amount of reactive gas relative to the carrier gas is small, their simultaneous flow may facilitate gas pressure balancing between processing regions by reducing pressure differences between adjacent regions.

[0078] Some embodiments of the present disclosure are directed to microwave plasma sources. Although the microwave plasma source is described with respect to a spatial ALD processing chamber, those skilled in the art will understand that the module is not limited to spatial ALD chambers, but is applicable to any injector situation where microwave plasma can be used. Will.

[0079] Some embodiments of the present disclosure advantageously provide a modular plasma source assembly, ie, a source that can be easily inserted into and removed from a processing system. For example, a multi-part gas distribution assembly such as that shown in FIG. 5 can be modified to remove one wedge-shaped gas port and replace the gas port with a modular plasma source assembly.

[0080] Some embodiments of the present disclosure advantageously provide traveling wave plasma applicators that use the plasma not only as a "power absorbing medium" but also as part of a "waveguiding medium." Some embodiments of the present disclosure advantageously provide plasma-powered electrodes that provide spatially extended microwave plasma. The concept of plasma-powered electrodes is also referred to as "surface wave plasma technology." Some embodiments of the present disclosure minimize or eliminate reflected power within the plasma applicator (or stripline feed electrode) to minimize or eliminate standing waves that cause non-uniformity.

[0081] Some embodiments of the present disclosure incorporate a "stripline powered electrode" in which the plasma functions as one of the two "ground electrodes" of the stripline powered electrode. For example, FIG. 6A shows a stripline feed electrode 350 spaced apart from the ground electrode 310. Electric field lines 352 are shown to illustrate the electronic coupling between feed electrode 350 and ground electrode 310 when a single ground electrode is present. FIG. 6B shows a stripline feed electrode 350 between and spaced apart from ground electrode 310 and ground electrode 310a. Electric field lines 352 indicate electronic coupling between power supply electrode 350 and ground electrode 310, and electric field lines 352a indicate electronic coupling between power supply electrode 350 and ground electrode 310a. FIG. 6C shows the feed electrode 350 spaced apart from the ground electrode 310 with the plasma 353 on the opposite side. Plasma 353 may act as a replacement for ground electrode 310. The dimensions of the feed electrode 350, the spacing between the feed electrode 350 and the ground electrode 310, the spacing between the feed electrode 350 and the plasma 353, and the composition and dimensions of the dielectric material 354 affect the constants of transmission line propagation. can be affected. In some embodiments, the width of the electrode is less than the length of the electrode. The illustrated field lines are for illustrative purposes and are not representative of the particular electric field in use and should not be considered as limiting the scope of the present disclosure.

[0082] Wave propagation (and attenuation) along the feed electrode is a function of the stripline geometry and the plasma. 6D and 6E are diagrams illustrating the effect of the distance between power supply electrode 350 and ground electrode 310. In FIG. 6D, the feed electrode (feed electrode 350) is relatively close to plasma 353 compared to the plasma in FIG. 6E. The power coupling (power loss) to the plasma is stronger in Fig. 6D than in Fig. 6E (i.e., the waves decay faster and propagate less axially). If the strip is close to metal ground (for a lossless electrode), the voltage on the stripline will be lower and the coupling to the plasma will be weaker, i.e. the axial power losses (wave attenuation) will be weaker and the waves will be further propagate.

[0083] Furthermore, the width of the strip (feed electrode 350) may affect the wave propagation (attenuation) constant, ie, the axial plasma profile. FIG. 6F shows a feed electrode 350 having a narrower width than feed electrode 350 of FIG. 6G. Other considerations being equal, the plasma 353 of FIG. 6F is confined to a narrower width than the plasma of FIG. 6G.

[0084] Referring to FIGS. 7-29, one or more embodiments of the present disclosure are directed to a modular microwave plasma source 300. As used herein and in the appended claims, the term "modular" means that the plasma source 300 is removable from or attached to the processing chamber. Modular sources typically can be moved, removed, or installed by one person.

[0085] The plasma applicator (stripline powered electrode 350, also referred to as a stripline electrode or hot electrode) of some embodiments includes two microwave (MW) generators ( A linear plasma source powered by one MW generator electrically coupled to each end of the plasma applicator. The first MW generator 361 and the second MW generator 362 can be tuned to slightly different frequencies to minimize standing wave problems. Without being bound by any particular theory of operation, it is believed that the use of two generators also allows for power balance between the two plasma applicator ends and control of plasma skew between the ends. The stripline feed electrode 350 may have various geometries (eg, the width/shape and/or distance of the stripline electrode to the plasma 353/ground electrode 310) to control the plasma profile. The stripline feed electrode 350 shown in FIG. 7 is separated from the ground electrode 310 and the plasma by a dielectric 320.

[0086] Referring to FIG. 8, one or more embodiments of the present disclosure are directed to a plasma source assembly 300 that includes a ground electrode 310 and a dielectric 320. The illustrated plasma source assembly 300 is a wedge-shaped component that may be used in a gas distribution assembly, similar to that of FIG. The illustrated plasma source assembly 300 has an inner circumferential edge 301 and an outer circumferential edge 302 defining a longitudinal axis.

[0087] Ground electrode 310 and dielectric 320 may be enclosed within a housing (not shown) or may form an exterior surface of assembly 300. In the embodiment shown in FIG. 8, dielectric 320 has a lower portion 321 inserted from an upper portion 322 to form a stepped outer surface. The stepped outer surface may provide a support surface (on the exposed bottom of the top 322) that may support the assembly 300 when positioned within the gas distribution assembly. This is a depiction of one possible configuration that allows assembly 300 to support its own weight; other configurations are within the scope of this disclosure.

[0088] FIG. 9 is a cross-sectional view of one or more embodiments of a plasma source assembly 300 in which the ground electrode 310 and housing 307 are stepped. Ground electrode 310 is shown as a lower portion 311 and upper portion 312 that are separate components from O-ring 313. The lower portion 311 and the upper portion 312 may be connected with any suitable components including, but not limited to, removable hardware (eg, bolts) or permanent connections (eg, solder bonds). The illustrated embodiment provides two areas in which assembly 300 may be supported within gas distribution assembly 120. The illustrated stepped housing 307 rests on a ledge 128 formed within the gas distribution assembly 120 and the top 312 of the ground electrode 310 rests on the top surface 126 of the gas distribution assembly 120. In the illustrated embodiment, assembly 300 is held in place by bolts 317 that pass through top 312 and enter gas distribution assembly 120.

[0089] The dielectric 320 shown in FIG. 9 has multiple sections that allow the dielectric 320 to be opened to access the interior, including the stripline feed electrode 350. Ground electrode 310 and dielectric 320 may be connected with O-ring 323 to form a hermetic seal of gas path 330, as described below. For ease of explanation, various O-rings are not shown in the other figures and illustrated embodiments. However, those skilled in the art will recognize the general utility of O-rings and suitable locations in which they may be used.

[0090] FIG. 10 shows a cross-sectional view of the plasma source assembly 300 of FIG. 8 taken along line 10-10'. Plasma source assembly 300 has a powered electrode 350 with a first end 355 and a second end 357. Feed electrode 350 extends along the longitudinal axis of plasma source assembly 300 such that first end 355 is adjacent inner peripheral edge 301 and second end 357 is adjacent outer peripheral edge 302. ing. As used herein, the term "adjacent" means that a first component is positioned near or next to a second component.

[0091] FIG. 10A is a schematic diagram illustrating a wedge-shaped plasma assembly 300 having an inner circumferential edge 301 and an outer circumferential edge 302. A longitudinal axis 303 of the assembly 300 is marked by a dotted line extending through the inner circumferential edge 301 and the outer circumferential edge 302 and is midway between the first edge 304 and the second edge 305. Power supply electrode 350 has a length L and a width W. Length L is measured from first end 355 to second end 357. Width W is measured perpendicular to long axis 303 in a plane similar to that formed by front surface 324 of assembly 300, as shown in FIG. Feed electrode 350 has an axis extending along a length from a first end to a second end of the feed electrode. In some embodiments, the powered electrodes 350 have substantially parallel sides. Referring to FIG. 10A, the side surface extends between the ends 355, 357 of the feed electrode. The term "substantially parallel" means that the major plane formed by one side is within ±10° of the major plane formed by the other side. In some embodiments, the width W of the powered electrode 350 remains substantially the same (eg, within 10% of the average) over the length L of the electrode 350. In some embodiments, the sides of electrode 350 are sloped inward at either the top or bottom of the electrode, forming a trapezoidal cross section.

[0092] Powering electrode 350 may be made of any suitable material that can withstand operating temperatures. In some embodiments, powered electrode 350 includes one or more of tungsten (W), molybdenum (Mo), or tantalum (Ta). In some embodiments, the powered electrode 350 comprises, consists essentially of, or consists of tungsten. As used herein, the term "consisting essentially of" means that the powered electrode 350 is, on an atomic basis, about 95%, 98%, or 99% or more of the recited material. In some embodiments, the powered electrode 350 comprises, consists essentially of, or consists of molybdenum. In some embodiments, the powered electrode 350 comprises, consists essentially of, or consists of tantalum.

[0093] The width W of the power supply electrode 350 may be any suitable width. In some embodiments, the powered electrode 350 ranges from about 2 mm to about 50 mm, or about 4 mm to about 40 mm, or about 5 mm to about 30 mm, or about 7 mm to about 20 mm, or about 8 mm. It has a width W in the range of about 15 mm. In some embodiments, the width W of the feed electrode 350 is about 10 mm.

[0094] In some embodiments, the width W of the feed electrode 350 varies from the first end 355 to the second end 357. In some embodiments, the shape of the width W of the feed electrode 350 matches the shape of the assembly 300. For example, the wedge-shaped assembly 300 may have a wedge-shaped feed electrode 350 with a similar ratio of width at the outer edge to width at the inner edge.

[0095] Ground electrode 310 is positioned on a first side of power supply electrode 350. The location of ground electrode 310 may be referred to as above power supply electrode 350. However, the use of relative terms such as "above," "below," etc. does not imply a specific physical relationship, but rather a relative relationship is intended. For example, the coordinate axes in FIG. 10 indicate that ground electrode 310 is positioned above power supply electrode 350 in the Z-axis. In some embodiments, the first side of the powered electrode 350 is a different side of the powered electrode 350 in the Z axis than the second side of the powered electrode 350.

[0096] Ground electrode 310 may be made of any suitable material including, but not limited to, aluminum, stainless steel, and copper. Ground electrode 310 may have any suitable electrical characteristics. In some embodiments, the ground electrode is a conductive material in electrical contact with an electrical ground.

[0097] As shown in FIG. 10, ground electrode 310 may be spaced a distance D ₁ from power supply electrode 350. Distance D ₁ may be any suitable distance to separate ground electrode 310 from powered electrode 350 to prevent direct electrical contact therebetween. In some embodiments, ground electrode 310 is spaced from powered electrode 350 by second dielectric 325. Second dielectric 325 may be the same as dielectric 320 or may be a different material. Dielectric 320 and/or second dielectric 325 may be made of any suitable material including, but not limited to, aluminum oxide, silicon oxide, silicon nitride, ceramic, quartz, and air. In some embodiments, dielectric 320 and/or second dielectric 325 include a combination of dielectric material and air gaps. Dielectric 320 on the second side of feed electrode 350 has an inner surface 326 adjacent or opposite feed electrode 350 and an outer surface 327 opposite inner surface 326 .

[0098] In the embodiment shown in FIG. 10, dielectric 320 is supported and/or within housing 307. A dielectric 320 and a second dielectric 325 surround the feed electrode 350 and provide direct electrical contact with the ground electrode 310 or with any gas or components on the side of the feed electrode 350 opposite the ground electrode 310. To prevent. In the illustrated embodiment, dielectric 320 separates powered electrode 350 from the gas within gas channel 370 .

[0099] A first microwave generator 361 (see FIG. 7) is electrically coupled to the first end 355 of the powered electrode 350 via a first feed 381. First feed 381 is made of any suitable electrically conductive material capable of transmitting power from first microwave generator 361 to powered electrode 350. In the embodiment shown in the detailed views of FIGS. 10 and 11, the first feed 381 passes through the ground electrode 310 through the opening 314 without making electrical contact with the ground electrode 310.

[00100] A second microwave generator 362 (see FIG. 7) is electrically coupled to the second end 357 of the powered electrode via a second feed 382. Second feed 382 is made of any suitable electrically conductive material capable of transmitting power from second microwave generator 362 to the powered electrode. In the embodiment shown in FIG. 10 and the detailed view in FIG. 12, the second feed 382 passes through the ground electrode 310 through the opening 315 without making electrical contact with the ground electrode 310.

[00101] First feed 381 and second feed 382 may be isolated from electrical contact with ground electrode 310 by any suitable technique. Referring again to FIG. 9, first feed 381 is shown as coaxial feed line 383. Coaxial feed line 383 includes an inner conductor (first feed 381) with an insulator 384 and an outer conductor 385 arranged in a coaxial configuration. Outer conductor 385 is in electrical contact with ground electrode 310 to form a complete electrical circuit. In the illustrated embodiment, insulator 384 terminates in second dielectric 325 . However, insulator 384 may terminate at any suitable point, including but not limited to feed electrode 350. The second feed 382 of some embodiments includes the same components as the first feed 381.

[00102] Referring to the detailed view of FIG. 11, the powered electrode 350 may be separated from the ground electrode 310 by a distance D ₁ and from the gas channel 370 by a distance D ₂ . Distance D ₁ and distance D ₂ may be of the same or different dimensions. In some embodiments, distance D ₁ and distance D ₂ range from about 4 mm to about 15 mm, or from about 5 mm to about 14 mm, or from about 7 mm to about 13 mm, or from about 9 mm to about 12 mm. , or about 11 mm.

[00103] In some embodiments, distance D ₁ remains substantially the same between first end 355 and second end 357. As used herein, the term "substantially the same" means that the thickness is 10%, 5%, 2%, or 1% of the average thickness from the first end 355 to the second end 357. This means that it will not fluctuate beyond the specified value. In some embodiments, distance D ₁ varies between first end 355 and second end 357. For example, in some embodiments, the second dielectric 325 is thicker near the second end 357 than the first end 355, so that the distance D ₁ The second end portion 357 is larger than the portion 355 . In some embodiments, second dielectric 325 is thinner near second end 357 than first end 355.

[00104] In some embodiments, distance _D2 remains substantially the same between first end 355 and second end 357. In some embodiments, distance D ₂ varies between first end 355 and second end 357. For example, in some embodiments, the second dielectric 325 is thicker near the second end 357 than the first end 355, so that the distance D ₂ is thicker near the first end 355. The second end 357 is also larger. In some embodiments, second dielectric 325 is thinner near second end 357 than first end 355.

[00105] Referring to FIG. 10 and detailed FIG. 13, some embodiments of the plasma source assembly 300 include a gas inlet 410 on top of the ground electrode 310. As used herein, the "top" of ground electrode 310 is the surface of ground electrode 310 furthest from feed electrode 350 and does not imply any physical orientation. The gas inlet 410 of some embodiments is in fluid communication with the gas channel 370 at the bottom of the assembly 300 opposite the top of the ground electrode 310 so that gas can flow from the top of the assembly 300 through the body of the assembly. and can flow into a process region of a processing chamber located below assembly 300.

[00106] Referring to FIGS. 13-17, some embodiments of gas flow passages 405 are shown. 15 is a cross-sectional view taken along line 15-15' of FIG. 8, showing a portion of the end of assembly 300 at first end 355 of feed electrode 350. FIG. FIG. 16 is a cross-sectional view taken along line 16-16' of FIG. 8 between the first end 355 of the powered electrode 350 and the centrally located gas inlet 410. FIG. 17 is a cross-sectional view taken along line 17-17' of FIG. 8 at the centrally located gas inlet 410. Although the illustrated embodiment has a gas inlet 410 in the center of the length of the powered electrode 350, it will be appreciated that this is merely a depiction of one possible configuration.

[00107] As shown in FIGS. 13 and 14, some embodiments include a gas inlet plate 440 that can fit into the recess 319 of the ground electrode 310 or into the housing if separated from the ground electrode 310. Gas insertion plate 440 may be any suitable shape or size. In the illustrated embodiment, gas insertion plate 440 is shaped like an I-beam with a center spar 441 and two end spar 442. Because the gas inlet 410 is centrally located in the center spar 441, the conductance of gas flowing through the gas inlet 410 is approximately the same on each end spar 442.

[00108] Gas insertion plate 440 is on ledge 421 below the top of ground electrode 310. The width of ledge 421 may be any suitable width to support the edge of gas insertion plate 440. Gas flowing through the gas inlet 410 flows into a gas space 420 defined by the bottom 423 of the recess 319 under the end of the end spar 442, the gas insertion plate 440, and the through hole 424.

[00109] Gas flow path 405 is shown in the schematic diagram of FIG. 18. Gas flowing through holes 424 passes through tubes 426 and into one or more plenums 428 extending along the longitudinal axis. One or more plenums 428 are in fluid communication with one or more gas conduits 430 to provide gas that extends from gas inlet plate 440 through ground electrode 310 and dielectric 320 along the longitudinal axis of plasma source assembly 300. A gas flow is provided through channel 370. Gas channel 370 may be any suitable depth, measured from front surface 324 of housing 307 or dielectric 320. In some embodiments, gas channel 370 has a depth in a range of about 5 mm to about 30 mm, or in a range of about 10 mm to about 25 mm, or in a range of about 15 mm to about 20 mm.

[00110] Gas space 420 and gas insertion plate 440 can be seen in the cross-sectional view of FIG. 17. Two plenums 428 and conduits 430 are shown in cross-section in FIG. Conduit 430 is in fluid communication with gas channel 370. In the cross-sectional views of FIGS. 15-17, housing 307 and dielectric 320 form a boundary to conduit 430. In the cross-sectional views of FIGS. In some embodiments, conduit 430 is formed entirely within dielectric 320. In some embodiments, conduit 430 and optional plenum 428 are formed entirely within metal housing 307, as shown in FIG. 16A. Those skilled in the art will recognize that any of the disclosed configurations may have the conduit 430 entirely within the metal housing 307.

[00111] Referring to FIG. 17, the cross-sectional shape of the power supply electrode is shown as a rectangle. The cross-sectional shape of power supply electrode 350 may be any suitable shape. For example, the feeding electrode 350 can be cylindrical, extending from a first end to a second end, and have a circular or elliptical cross-sectional shape. In some embodiments, the powered electrode is a flat conductor. As used herein, the term "flat conductor" refers to a conductive material in the shape of a right prism with a rectangular cross section, as shown in FIG. A flat conductor has a height or thickness T. The thickness T may be any suitable thickness depending on the material of the power supply electrode 350, for example. In some embodiments, the powered electrode 350 is in the range of about 5 μm to about 5 mm, in the range of 0.1 mm to about 5 mm, or in the range of about 0.2 mm to about 4 mm, or in the range of about 0.3 mm to about 3 mm, or The thickness ranges from about 0.5 mm to about 2.5 mm, or from about 1 mm to about 2 mm.

[00112] In some embodiments, the width W _d of dielectric 320 and/or second dielectric 325 may remain the same or vary along the length of the electrode. In some embodiments, dielectric 320 (optionally including second dielectric 325) has a uniform width W _d from first end 355 to second end 357 of feed electrode 350. In some embodiments, dielectric 320 has substantially parallel sides (as shown in FIG. 9). The side surface extends between the ends 355, 357 of the feed electrode. The term "substantially parallel" means that the major plane formed by one side is ±10° of the major plane formed by the other side. As shown in FIG. 15, the main plane excludes the curved side portions. In some embodiments, the width W _d of the dielectric 320 remains substantially the same (eg, within 10% of the average) over the length L of the electrode 350. In some embodiments, the width W _d of the dielectric 320 varies with the width of the housing 307 such that the ratio of the width of the dielectric 320 to the width of the housing 307 varies from the inner end of the housing to the outer end of the housing. remains almost the same. In some embodiments, the width W _d of dielectric 320 does not exceed λ/2 and lambda (λ) is a microwave wavelength.

[00113] Referring to FIG. 7, a first microwave generator 361 is electrically coupled to the first end 355 of the powered electrode 350 via a first feed 381 and a second microwave generator 362 is electrically coupled to second end 357 of powered electrode 350 via second feed 382 . First feed 381 and second feed 382 are described above with respect to FIG. The first microwave generator 361 operates at a first frequency f1, and the second microwave generator 362 operates at a second frequency f2. In some embodiments, the first frequency f1 and the second frequency f2 are in the range of about 300 MHz to about 300 GHz, or in the range of about 900 MHz to about 930 MHz, or in the range of about 1 GHz to about 10 GHz, or in the range of about 1. 5 GHz to about 5 GHz, or about 2 GHz to about 3 GHz, or about 2.4 GHz to about 2.5 GHz, or about 2.44 GHz to about 2.47 GHz, or about 2.45 GHz to about 2 The range is .46GHz. In some embodiments, frequency f1 and frequency f2 are each approximately 915 MHz ± 15%, or 915 MHz ± 10%. In some embodiments, frequency f1 is within 0.05 GHz of frequency f2. In some embodiments, frequency f1 is different from frequency f2 (i.e., from about 900 MHz to about 930 MHz, the difference in frequency is more than 5 MHz, or from 1 GHz to 10 GHz, the difference in frequency is more than 0.05 GHz. ). In some embodiments, frequency f1 is different from frequency f2, each in a range of about 900 MHz to about 930 MHz, about 2.4 GHz to about 2.5 GHz, or 2.45 GHz ± 10%, or 2.45 GHz. The range is ±5%, or 915MHz ±15%, or 915MHz ±10%.

[00114] First microwave generator 361 and second microwave generator 362 may operate with any suitable power. The power of the microwave generator can be independently controlled to adjust plasma parameters. In some embodiments, the power of the microwave generator ranges from about 100 W to about 5 kW, or about 500 W to about 2 kW, or about 1 kW.

[00115] In use, microwave power may be applied to both ends of the powered electrode 350 using a first microwave generator 361 and a second microwave generator 362. If no power is absorbed by the plasma 353, the power may be routed through a circulator to a pseudo load (also referred to as a "matched termination load") at the output of the microwave generator. This can be done via an internal or external circulator. In some embodiments, the second microwave generator 362 is a matched termination load of the first microwave generator 361 so that one generator powers both the first feed 381 and the second feed 382. can be supplied. In some embodiments, second microwave generator 362 is a dummy load.

[00116] The present disclosure is shown in FIG. 19, in which a first slide short 461 is positioned adjacent a first feed 381 and a second slide short 462 is positioned adjacent a second feed 382. 1 shows a schematic diagram of one or more embodiments of. The slide shorts 461, 462 of some embodiments are coaxial slide short type tuners positioned around a coaxial feed. In some embodiments, the first movable short 463 and the second movable short 464 are used in conjunction with the first slide short 461 and the second slide short 462 to provide an "L type" at the power input. form a matching network. The tuning section (where the sleeve and short are located) may be located on the atmospheric side of the power supply connection.

[00117] FIG. 20 shows that the coaxial slide short circuit type tuners 471, 472 are connected to the first end 355 of the first leg 391 adjacent to the first feed 381 and the first end 355 of the first leg 391 adjacent to the second feed 382. 2 is a schematic diagram illustrating one or more embodiments of the disclosure positioned at a second end 357 of leg 392 of FIG. The first leg 391 and the second leg 392 may be shorted coaxial wires of adjustable length. The sliding metal short may form a variable transmission line tuning element. The illustrated microwave generator is positioned substantially coaxially with the feed electrode 350, with legs 391, 392 at an angle to the axis of the feed electrode 350.

[00118] In FIG. 21 , a first stub tuner 481 is positioned adjacent the first feed 381 at the first end 355 of the powered electrode 350 and a second stub tuner 482 is positioned adjacent the first feed 381 at the first end 355 of the powered electrode 350 . FIG. 3A shows a schematic diagram of one or more embodiments of the present disclosure positioned adjacent a second feed 382 at an end 357 of the FIG. The stub tuners 481, 482 can be positioned at any point along the length of the feed electrode 350 and can be closer to or farther from the feed electrode 350. For example, second stub tuner 482 is shown closer to feed electrode 350 than first stub tuner 481 . First microwave generator 361 and second microwave generator 362 are electrically coupled to feeding electrode 350 in a substantially coaxial arrangement. In some embodiments, the one or more stub tuners are in a range of about 20 ohms to about 80 ohms, or in a range of about 40 ohms to about 60 ohms, or in a range of about 50 ohms to minimize power reflections. has a resistance of

[00119] FIG. 22A is a schematic diagram illustrating one or more embodiments of the present disclosure having a configuration similar to that of FIG. 20. Here, the legs 391, 392 are shown substantially coaxial with the feed electrode 350, and the coaxial slide short-circuit type tuners 471, 472 are coaxially oriented. The first feed 381 and the second feed 382 are at an angle to the axis of the power supply electrode 350. FIG. 22B is a schematic diagram illustrating the embodiment of FIG. 22A, with first feed 381 and second feed 382 moving toward the center of the length of powered electrode 350. Moving the feed to the center of the length of the electrode may increase the power available to generate the plasma while allowing the tuner to control the plasma profile at the ends of the fed electrode.

[00120] FIG. 23A depicts a schematic diagram of one or more embodiments of the present disclosure having a configuration similar to that of FIG. 21. Here, the legs 391, 392 are shown as being generally coaxial with the feed electrode 350, and the stub tuners 481, 482 are positioned adjacent to the outer legs 391, 392 of the first feed 381 and second feed 382. are doing. FIG. 23B is a schematic diagram illustrating the embodiment of FIG. 23A, similar to the difference between FIGS. and moving. The tuner shown in FIGS. 23A and 23B can have a horizontal orientation as well as the vertical orientation shown.

[00121] In some embodiments, similar to FIG. 23A but without the stub tuners 481, 482, the feed electrode 350 has a diameter of approximately 1/16λ, Extends beyond 1/8λ or 1/4λ. In some embodiments, the feed electrode 350 extends beyond each of the first feed 381 and the second feed 382 by an amount that is less than or equal to about 1/16λ, 1/8λ, or 1/4λ. For example, the embodiment shown in FIG. 23A has legs 391, 392 on the outside of each of first feed 381 and second feed 382. Those portions of powered electrode 350 that are not between feeds may be referred to as legs, extensions, or stubs. In some embodiments, the distance of the end of the powered electrode 350 to the nearest feed ranges from about 0.1 mm to about 10 mm, or from about 0.5 mm to about 8 mm, or from about 1 mm to about 7.5 mm. or from about 2 mm to about 6 mm, or from about 3 mm to about 4.5 mm. In some embodiments, the length of legs 391, 392 may be used as a tuning element to enhance plasma uniformity.

[00122] FIG. 24 is a schematic cross-sectional view of a plasma assembly 300 according to one or more embodiments of the present disclosure. Here, housing 307 is around both dielectric 320 and ground electrode 310. Housing 307 can be electrically conductive or non-conductive. The exemplary embodiment includes measurements of the length D _L of the dielectric 320, the length P _L of the plasma 353 formed within the gas channel 370, the length W _L of the powered electrode 350, and the distance D _I between the power inputs. Show value. In some embodiments, the length D _L ranges from about 150 mm to about 500 mm, or from about 200 mm to about 450 mm, or from about 250 mm to about 400 mm, or from about 300 mm to about 350 mm. In some embodiments, the plasma length P _L is less than or equal to the length D _L . In some embodiments, the plasma length P _L is about 10 mm less than the length D _L. The length _WL of the power supply electrode 350 is approximately the length of the plasma _PL . In some embodiments, the length W _L of the feed electrode 350 is less than or equal to the length D _L of the dielectric. The length D ₁ between the inputs is less than or equal to the length W _L of the feeding electrode 350 .

[00123] Additional embodiments of the present disclosure are directed to methods of generating or providing plasma. A first microwave power is applied from the first microwave generator to the first end of the powered electrode, and a second microwave power is applied from the second microwave generator to the second end of the powered electrode. added to. The first microwave power and the second microwave power operate at frequencies ranging from about 2.4 GHz to about 2.5 GHz. The feed electrode is surrounded by a dielectric with a ground electrode on a first side of the feed electrode. A plasma is formed adjacent to the dielectric on a second side of the feed electrode that is different from the first side.

[00124] During plasma generation, the pressure within the process chamber or channel 370 may be at any suitable temperature. In some embodiments, the pressure within channel 370 ranges from about 1 mTorr to about 100 Torr, or about 10 mTorr to about 10 Torr, or about 50 mT.

[00125] EXAMPLE [00126] A plasma source assembly with dual microwave feeds and stripline powered electrodes was constructed and powered by two 1 kW generators operating at 2.4-2.5 GHz. . The stripline had an aluminum body, a copper strip, and quartz as the dielectric. The geometry was configured to maintain a characteristic impedance of approximately 50 ohms in the circuit to minimize power reflections. Two stub tuners were equipped at each end of the applicator. The plasma was generated using N ₂ and Ar/N ₂ with gas pressures in the Torr range in a plasma area of 340x75 mm.

[00127] A wedge-shaped plasma source assembly was constructed with a wedge-shaped dielectric. The microwave feed was straight to the top of the assembly, a shorted adjustable coaxial line was used instead of a stub tuner, and the strip material was molybdenum. The plasma covering the pie was generated with up to several torr of _N2 and Ar/ _N2 gas mixture.

[00128] FIG. 25A is a graph showing power (normalized to input power) as a function of axial position (normalized to feed electrode length) for various power profiles. Power was applied to one side of the powered electrode at approximately 800W. FIG. 25B shows the axial position (normalized to the length of the feed electrode) of a dual power feed electrode with approximately 800 W applied to one end of the feed electrode and approximately 600 W applied to the other end of the feed electrode. 2 is a graph showing power (normalized to input power) as a function of . The power of the antenna decreased from the wave launch point toward the opposite antenna end (or plasma end) because the energy carried by the waves was dissipated in the plasma.

[00129] FIGS. 26A-26C illustrate wave propagation using dual powered electrodes. In FIG. 26A, the power supplied to the end of the powered electrode 350 is not sufficient to form a plasma over the entire length of the powered electrode. In FIG. 26B, the power applied to the powered electrode is greater than in FIG. 26A, but still insufficient to form a plasma over its entire length. FIG. 26C shows a powered electrode with sufficient power applied to both ends to form a complete plasma over the length of the powered electrode. In some embodiments, the plasma that is formed is overdense (electron density ρ _e is higher than the critical plasma density ρ _c ). Furthermore, the plasma formed may have an electron density ρ _e that is greater than the standing wave cutoff density. For example, at 2.45 GHz, the critical plasma density is ρ _c =7×10 ¹⁰ cm ⁻³ , and the cutoff density for standing wave propagation along a dielectric material with a relative permittivity of 4 (quartz), for example, is ~ It is 3×10 ¹¹ cm ⁻³ .

[00130] Those skilled in the art will recognize that although the plasma of FIG. 26C is generated along the entire length of the powered electrode, the plasma may not be uniform. The power applied to the end of the powered electrode is one factor that can affect the integrity and uniformity of the electronic coupling of the powered electrode to the plasma and the resulting plasma density (electron density).

[00131] The conductive medium used (ie, the gas source from which the plasma is ignited) can affect the uniformity and electron density of the plasma. In some embodiments, the electron density of the plasma can be adjusted by adding argon to the plasma gas. For example, if the plasma is ignited using a nitrogen plasma, there will be power loss to the chamber walls, atomic collisions resulting in loss of ionization (i.e., production of excited atoms that are not ions), and changes in the vibrational or rotational state of the atoms. Non-uniformity in electron density can occur due to loss from the energy that provides . Adding a flow of argon to the nitrogen can increase uniformity because argon does not suffer as much loss as nitrogen.

[00132] Various factors can be changed to change the electron density and/or uniformity of the plasma. FIG. 27A shows a straight feed electrode 350 with a uniform distance between the ground electrode 310 and the outer surface 327 of the dielectric 320. Plasma 353 is shown to be incomplete over the length of powered electrode 350. The curve shown at the bottom of the figure shows the axial power density (plasma) profile for the embodiment of FIG. 27A, showing a decrease in plasma density near the center of the electrode.

[00133] FIG. 27B illustrates an embodiment in which the distance of the feed electrode 350 from the outer surface 327 of the dielectric 320 is varied such that the feed electrode 350 is closer to the plasma 353 near the center of the length of the feed electrode 350. show. As the distance of the feed electrode 350 to the outer surface 327 of the dielectric 320 decreases, electronic coupling to the plasma 353 increases. The width or thickness of the feed electrode 350 remains approximately the same over the length of the electrode. The curve shown at the bottom of the figure shows an axial power density (plasma) profile for the embodiment of FIG. 27B that is more uniform over the length of the feeding electrode than the axial power density (plasma) profile of FIG. 27A. .

[00134] The illustrated embodiment may also be contemplated to vary the distance of the powered electrode to the ground electrode 310 over the length of the electrode. A reduced distance to ground electrode 310 may reduce electronic coupling to plasma 353 by increasing electronic coupling to ground. This embodiment is similar to that described with respect to FIGS. 6D and 6E.

[00135] FIG. 27C illustrates an embodiment in which the shape of the dielectric 320 is modified such that the outer surface 327 is closer to the feed electrode 350 near the center of the length of the electrode. The feed electrode 350 in this embodiment is a flat electrode, and the electronic coupling to the plasma 353 is adjusted by the thickness of the dielectric 320.

[00136] FIG. 27D illustrates an embodiment in which the shape of the feeding electrode 350 varies along the length of the electrode. In this embodiment, the feed electrode 350 is thicker near the ends of the electrode than near the center. By changing the thickness of the electrodes, the electrical coupling to one or more of ground electrode 310 and/or dielectric 320 may be changed.

[00137] FIG. 27E is a top view illustrating an embodiment in which the width of the feed electrode 350 varies along the length of the electrode. Here, the width of the feeding electrode is greatest at the central portion of the electrode. First feed 381 and second feed 382 are shown in phantom for illustrative purposes. The position of the feed along the length of the powered electrode is variable.

[00138] FIG. 28 is a diagram illustrating an embodiment of a plasma source assembly in which there are two connection ports with a powered electrode 350, one with a microwave source feed and one with a pseudo and/or disabled terminated at the load. First feed 381 and second feed 382 are electrically coupled to power supply electrode 350. Microwave generator 361 is electrically connected to first feed 381 and second feed 382 is electrically coupled to pseudo load 397 . The microwave generator may be a fixed or variable frequency generator that powers the electrode through one port and the other port may be "terminated." Power control and an optional tuner may be included at one or both ends. In some embodiments, tuners can be distributed across the powered electrodes to provide variable end-to-end power/plasma axial distribution profile control. In some embodiments, the axially varying applicator geometry (of the stripline: width/shape/position and/or dielectric dimensions or dielectric material) may vary in the axial direction, for example as shown in FIGS. Additional fixed axial plasma/film profile control using a dielectric constant of

[00139] The dummy load 397 may be a matched termination load or a reactive load (fixed or movable short circuit), or a combination of a dummy load and a reactive load. In some embodiments, the dummy load is a matched termination load from the first microwave generator.

[00140] FIG. 29 depicts another embodiment of a plasma source assembly in which there is at least one additional feed 398 electrically coupled to the powered electrode. The location and number of at least one additional feed 398 is variable. In some embodiments, there are 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 additional feeds, or a range of 1 to 10 additional feeds. Each of the additional feeds 398 can be positioned independently of any other feeds.

[00141] The number of microwave generators can vary depending on the number of feeds. For example, the illustrated embodiment has three feeds and may also have three microwave generators providing power to the feeding electrodes. In some embodiments, there are fewer microwave generators than feeds. For example, the first feed 381 may be connected to a microwave generator, and the other feeds (second feed 382 and additional feeds 398) may be connected to dummy and/or reactive loads. In some embodiments, the at least one dummy load is a matched termination load of the first microwave generator. At least one microwave generator is connected to the feed. Power controls and optional tuners can be placed on each port or distributed between ports to provide a variable end-to-end power/plasma axial distribution profile. Additional (fixed) axial plasma/membrane profile control is possible through axially varying applicator geometry (width/shape/position of the feed electrode and/or dielectric dimensions or permittivity of the dielectric material) It is.

[00142] A first embodiment of the present disclosure extends along a length of a powered electrode having a first end and a second end defining a length and having a thickness and a width. a feeding electrode having a long axis; a grounding electrode on a first side of the feeding electrode, the grounding electrode being spaced apart from the feeding electrode by a certain distance; and a dielectric on a second side of the feeding electrode; A dielectric and a ground electrode surround the feed electrode and are electrically coupled to the first end of the feed electrode via the first feed, with the dielectric having an inner surface adjacent to the feed electrode and an outer surface opposite the inner surface. and a second microwave generator electrically coupled to a second end of a powered electrode via a second feed.

[00143] In a second embodiment, the first embodiment is modified such that the ground electrode is spaced from the power supply electrode by a second dielectric.

[00144] In a third embodiment, either the first embodiment or the second embodiment is modified such that the feed electrode is a flat conductor.

[00145] In a fourth embodiment, any of the first to third embodiments is modified such that one or more of the widths of the feed electrodes vary from the first end to the second end, and The distance from the electrode to the ground electrode varies from the first end to the second end, or the distance from the feed electrode to the outer surface of the dielectric varies from the first end to the second end. .

[00146] In a fifth embodiment, any of the first through fourth embodiments is modified such that the feed electrode is moved a distance from the inner surface of the dielectric to form an air gap.

[00147] In a sixth embodiment, any of the first through fifth embodiments further comprises one or more stub tuners located at one or more locations along the length of the feeding electrode. Be changed.

[00148] In a seventh embodiment, any of the first through sixth embodiments is modified, wherein the stub tuner comprises a sliding short positioned adjacent the first feed and the second feed. .

[00149] In an eighth embodiment, any of the first through seventh embodiments is modified such that a stub tuner is positioned adjacent the first feed and the second feed.

[00150] In a ninth embodiment, any of the first through eighth embodiments is modified, wherein the powered electrode has a first leg at the first end and a second leg at the second end. It further includes legs.

[00151] In a tenth embodiment, any of the first through ninth embodiments is modified, wherein the first feed and the second feed are coaxial with the powered electrode, and the first leg and the second The legs extend at an angle to the axis of the feeding electrode.

[00152] In an eleventh embodiment, any of the first through tenth embodiments is modified to further include one or more stub tuners positioned along the length of the feed electrode.

[00153] In a twelfth embodiment, any of the first to eleventh embodiments is modified, wherein the stub tuner includes a slide short positioned at the end of the first leg and a second leg. and a sliding short located at the end of the.

[00154] In a thirteenth embodiment, any of the first through twelfth embodiments is modified, wherein the stub tuners are positioned adjacent the first leg, and one stub tuner is positioned adjacent the second leg. located adjacent to.

[00155] In a fourteenth embodiment, any of the first through thirteenth embodiments is modified, wherein the first feed and the second feed extend at an angle to the axis of the powered electrode; The first leg and the second leg are coaxial with the feeding electrode.

[00156] In a fifteenth embodiment, any of the first through fourteenth embodiments includes one or more stub tuners positioned at the end of the first leg and the end of the second leg. It will be modified to further include the following.

[00157] In a sixteenth embodiment, any of the first through fifteenth embodiments is modified, wherein the stub tuner includes a sliding short positioned adjacent the first leg and a second leg. and a sliding short positioned adjacent to the slide short.

[00158] In a seventeenth embodiment, any of the first through sixteenth embodiments is modified, wherein the first microwave generator and the second microwave generator have a frequency range of about 900 MHz to about 930 MHz, or about 2 It operates at frequencies ranging from .4 GHz to approximately 2.5 GHz.

[00159] In an eighteenth embodiment, any of the first through seventeenth embodiments is modified such that the first microwave generator and the second microwave generator operate at different frequencies.

[00160] In a nineteenth embodiment, any of the first through eighteenth embodiments is modified to further include a gas inlet at the ground electrode, the gas inlet extending along the longitudinal axis. one or more plenums in fluid communication with a plurality of plenums, the one or more plenums in fluid communication with one or more gas conduits extending from a gas inlet through a ground electrode and a dielectric along a longitudinal axis of the plasma source assembly; Provides a gas flow that flows to an extending gas channel.

[00161] In a twentieth embodiment, any of the first through nineteenth embodiments is modified such that the distance of the feed electrode relative to the outer surface of the dielectric varies over the length of the feed electrode.

[00162] In a twenty-first embodiment, any of the first through twentieth embodiments is modified such that the distance of the feed electrode relative to the ground electrode varies over the length of the feed electrode.

[00163] In a twenty-second embodiment, any of the first through twenty-first embodiments is modified such that one or more of the thickness or width of the feed electrode varies along the length of the feed electrode.

[00164] In a twenty-third embodiment, any of the first through twenty-second embodiments further comprises a third microwave generator electrically coupled to the powered electrode via a third feed. Modified, the third feed is located along the length of the powered electrode between the first feed and the second feed.

[00165] In a twenty-fourth embodiment, any of the first to twenty-third embodiments further comprises a fourth microwave generator electrically coupled to the powered electrode via a fourth feed. Modified, the fourth feed is located along the length of the powered electrode between the first feed and the second feed.

[00166] In a twenty-fifth embodiment, any of the first through twenty-fourth embodiments further comprises a fifth microwave generator electrically coupled to the powered electrode via a fifth feed. Modified, the fifth feed is located along the length of the powered electrode between the first feed and the second feed.

[00167] A twenty-sixth embodiment is directed to a gas distribution assembly comprising the plasma source assembly of any of the first through twenty-fifth embodiments.

[00168] A twenty-seventh embodiment is a flat powered electrode having a first end and a second end and an axis extending along a longitudinal axis of a plasma source assembly, the flat powered electrode having a width. a ground electrode on a first side of the feed electrode, the ground electrode spaced from the feed electrode by a second dielectric and including a gas inlet; the dielectric and the second dielectric surround the feed electrode to prevent electrical contact between the feed electrode and the ground electrode, and the dielectric includes a gas that extends along the longitudinal axis of the plasma source assembly. a channel, the gas inlet is in fluid communication with one or more plenums extending along the longitudinal axis, and the one or more plenums are in fluid communication with the gas channel via one or more gas conduits. a first microwave generator electrically coupled to the first end of the powered electrode via a first feed and operating at a first frequency; a second microwave generator electrically coupled to a second end of the powered electrode via a second microwave generator operating at a second frequency, the first frequency and the second frequency being , within a range of about 900 MHz to about 930 MHz, or within a range of about 2.4 GHz to about 2.5 GHz, the first frequency and the second frequency being different.

[00169] A twenty-eighth embodiment is directed to a method of providing a plasma, the method comprising: applying a first microwave power from a first microwave generator to a first end of a powered electrode; providing microwave power from a second microwave generator to a second end of the powered electrode, wherein the first microwave power and the second microwave power are in a range of about 900 MHz to about 930 MHz, or The feed electrode operates at a frequency in the range of about 2.4 GHz to about 2.5 GHz, and the feed electrode is surrounded by a dielectric and a ground electrode on a first side of the feed electrode, and a ground electrode on a second side different from the first side of the feed electrode. an axis extending along the length of the feed electrode having a first end and a second end defining a length and having a width; a grounding electrode on a first side of the feeding electrode, the grounding electrode being spaced apart from the feeding electrode by a certain distance; and a dielectric on a second side of the feeding electrode, the grounding electrode having a dielectric on a second side of the feeding electrode. and a ground electrode surrounding the feed electrode and having an inner surface adjacent to the feed electrode and an outer surface opposite the inner surface, a first feed electrically coupled to the feed electrode, and a first feed electrically coupled to the feed electrode. a second feed, the first feed being electrically coupled to the first microwave generator, and the second feed being electrically coupled to the dummy load.

[00170] In a twenty-ninth embodiment, the twenty-eighth embodiment is modified such that the dummy load is a matched termination load of the first microwave generator.

[00171] In a thirtieth embodiment, any of the twenty-eighth to twenty-ninth embodiments is modified to further include at least one additional feed electrically coupled to the powered electrode.

[00172] In a thirty-first embodiment, any of the twenty-eighth to thirty embodiments is modified, wherein a number of points in the range of 1 to 10 are electrically coupled to the feeding electrode at points along the length of the feeding electrode. Additional feeds exist.

[00173] In a thirty-second embodiment, any of the twenty-eighth to thirty-first embodiments further comprises at least one additional microwave generator electrically coupled to at least one of the additional feeds. Be changed.

[00174] In a thirty-third embodiment, any of the twenty-eighth through thirty-second embodiments is modified, wherein the first microwave generator is electrically coupled to the first feed and the dummy load is coupled to the other feed. electrically coupled.

[00175] In a thirty-fourth embodiment, any of the twenty-eighth through thirty-second embodiments is modified, wherein at least one of the dummy loads is a matched termination load of the first microwave generator.

[00176] According to one or more embodiments, the substrate is treated before and/or after forming the layer. This processing may be performed in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is directly transferred from the first chamber to a separate second processing chamber for further processing. The substrate may be transferred directly from the first chamber to a separate processing chamber, or the substrate may be transferred from the first chamber to one or more transfer chambers and then transferred to the separate processing chamber. Accordingly, the processing device may include multiple chambers in communication with the transfer station. This type of device may be referred to as a "cluster tool" or "cluster system."

[00177] Generally, cluster tools are modular systems that include multiple chambers that perform various functions, including substrate center detection and orientation, degassing, annealing, deposition, and/or etching. According to one or more embodiments, the cluster tool includes at least a first chamber and a central transfer chamber. A central transfer chamber may house a robot that may shuttle substrates between the processing chamber and the load lock chamber. The transfer chamber is typically maintained under vacuum conditions and provides an intermediate stage for shuttling substrates from one chamber to another and/or to a load lock chamber located at the front end of the cluster tool. However, the exact arrangement and combination of chambers may be varied for the purpose of performing particular steps of the processes described herein. Other processing chambers that can be used include cyclic layer deposition (CLD), atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, chemical cleaning, thermal processing such as RTP, Including, but not limited to, plasma nitridation, degassing, orientation, hydroxidation, and other substrate processes. By performing the process in the chamber of a cluster tool, surface contamination of the substrate by atmospheric impurities can be avoided without oxidation before subsequent films are deposited.

[00178] According to one or more embodiments, the substrate is continuously in a vacuum or "load-locked" condition and is not exposed to ambient air when moving from one chamber to the next. The transfer chamber is therefore under vacuum and is "pumped down" under vacuum pressure. An inert gas may be present in the processing or transfer chamber. In some embodiments, an inert gas is used as a purge gas to remove some or all of the reactants after forming the layer on the surface of the substrate. According to one or more embodiments, a purge gas is injected at the outlet of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and/or additional processing chambers. The flow of inert gas thus forms a curtain at the outlet of the chamber.

[00179] During processing, the substrate may be heated or cooled. Such heating or cooling may be accomplished by altering any suitable parameters, including but not limited to altering the temperature of the substrate support (such as a susceptor) and flowing heated or cooled gases over the substrate surface. can be achieved. In some embodiments, the substrate support includes a heater/cooler that can be controlled to conductively vary the substrate temperature. In one or more embodiments, the gas used (reactive or inert gas) is heated or cooled to locally change the substrate temperature. In some embodiments, a heater/cooler is positioned within the chamber adjacent the substrate surface to vary the substrate temperature by convection.

[00180] The substrate can also be fixed or rotated during processing. The rotating substrate can be rotated continuously or in discrete steps. For example, the substrate can be rotated throughout the process, or slightly rotated between exposures to different reactive or purge gases. By rotating the substrate (continuously or stepwise) during processing to minimize effects such as local variations in gas flow geometry, more uniform deposition or etching is likely to be achieved. obtain.

[00181] While the above is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from its essential scope, which scope is defined by the following claims. determined by the range of

Claims (17)

A plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a ground electrode on a first side surface side of the power supply electrode, the ground electrode being spaced apart from the power supply electrode by a certain distance;
a dielectric on a second side surface of the power supply electrode, the dielectric and the ground electrode surrounding the power supply electrode, and the dielectric covering an inner surface adjacent to the power supply electrode and an outer surface opposite to the inner surface; a dielectric material having;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed. The plasma source assembly of claim 1 , wherein the ground electrode is spaced from the powered electrode by a second dielectric. A plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed;
Equipped with
A plasma source assembly, wherein the feed electrode is a flat conductor. A plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed;
Equipped with
A plasma source assembly, wherein the width of the powered electrode varies from the first end to the second end. The plasma source assembly of claim 1 , wherein the distance from the powered electrode to the ground electrode varies from the first end to the second end. The plasma source assembly of claim 1, wherein a distance from the feed electrode to the outer surface of the dielectric varies from the first end to the second end. The plasma source assembly of claim 1 , wherein the feed electrode moves a distance from the inner surface of the dielectric to form an air gap. A plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed;
Equipped with
The plasma source assembly, wherein the powered electrode further comprises a first leg at the first end and a second leg at the second end. The first feed and the second feed extend at an angle to the longitudinal axis of the powered electrode, and the first leg and the second leg are coaxial with the powered electrode. 9. The plasma source assembly of claim 8 . 10. The plasma source assembly of claim 9 , further comprising one or more stub tuners positioned at an end of the first leg and an end of the second leg. 11. The plasma of claim 10 , wherein the stub tuner comprises a sliding short positioned adjacent the first leg and a sliding short positioned adjacent the second leg. source assembly. A plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed;
Equipped with
the first microwave generator and the second microwave generator operate at a frequency in the range of about 900 MHz to about 930 MHz or in the range of about 2.4 GHz to about 2.5 GHz ;
A plasma source assembly , wherein the first microwave generator and the second microwave generator operate at different frequencies . The plasma source assembly of claim 1 , wherein a distance of the feed electrode relative to the outer surface of the dielectric varies over the length of the feed electrode. The plasma source assembly of claim 1 , wherein the distance of the powered electrode relative to the ground electrode varies over the length of the powered electrode. A plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed;
Equipped with
A plasma source assembly wherein one or both of the thickness or the width of the powered electrode varies along the length of the powered electrode. A gas distribution assembly comprising a plasma source assembly according to any one of claims 1 to 15 . A gas distribution assembly comprising a plasma source assembly, the plasma source assembly comprising:
a powered electrode having a first end and a second end defining a length and a longitudinal axis extending along the length of the powered electrode having a thickness and a width;
a first microwave generator electrically coupled to the first end of the powered electrode via a first feed;
a second microwave generator electrically coupled to the second end of the powered electrode via a second feed;
A gas distribution assembly comprising:

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