JP7259317B2 - Negative photosensitive resin composition, semiconductor device and electronic equipment using the same - Google Patents

Description

TECHNICAL FIELD The present invention relates to a negative photosensitive resin composition, and semiconductor devices and electronic equipment using the same.

Various developments have been made so far in the photosensitive resin composition. As this type of technology, for example, the technology described in Patent Document 1 is known. Patent Document 1 describes the use of 3-glycidoxypropyltrimethoxysilane as a coupling agent in a photosensitive resin composition (Table 1 of Patent Document 1).

JP 2016-188987 A

However, as a result of investigation by the present inventors, it was found that the photosensitive resin composition described in Patent Document 1 has room for improvement in terms of metal adhesion.

As a result of further investigation by the present inventor, in a negative photosensitive resin composition containing a thermosetting resin and a photoacid generator, a coupling agent having an acid anhydride group and water are used in combination, and the water content is within a predetermined range, the metal adhesion of the cured product of the negative photosensitive resin composition can be improved, and the present invention has been completed.

According to the invention,
a thermosetting resin;
a photoacid generator;
a coupling agent having an acid anhydride group;
A negative photosensitive resin composition comprising water and
A negative photosensitive resin composition is provided in which the water content is 0.20% by mass or more and 10% by mass or less with respect to the entire negative photosensitive resin composition excluding water.

Moreover, according to the present invention,
a semiconductor chip;
a resin film provided on the semiconductor chip and containing a cured product of the negative photosensitive resin composition described above;
A semiconductor device is provided, comprising:

Further, according to the present invention, there is provided an electronic device including the above semiconductor device.

ADVANTAGE OF THE INVENTION According to this invention, the negative photosensitive resin composition excellent in metal adhesion, a semiconductor device using the same, and an electronic device are provided.

1 is a longitudinal sectional view showing an example of the configuration of a semiconductor device of this embodiment; FIG. FIG. 2 is a partially enlarged view of the area enclosed by the dashed line in FIG. 2A to 2C are process diagrams showing a method of manufacturing the semiconductor device shown in FIG. 1; 2A to 2C are diagrams for explaining a method of manufacturing the semiconductor device shown in FIG. 1; FIG. 2A to 2C are diagrams for explaining a method of manufacturing the semiconductor device shown in FIG. 1; FIG. 2A to 2C are diagrams for explaining a method of manufacturing the semiconductor device shown in FIG. 1; FIG. It is a partially enlarged cross-sectional view showing a first modification of the semiconductor device according to the embodiment. It is a partially enlarged cross-sectional view showing a second modification of the semiconductor device according to the embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all the drawings, the same constituent elements are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. Also, the drawings are schematic diagrams and do not correspond to actual dimensional ratios.

The outline of the photosensitive resin composition of this embodiment is shown.
The photosensitive resin composition of this embodiment is a negative photosensitive resin composition containing a thermosetting resin, a photoacid generator, a coupling agent having an acid anhydride group, and water. The content of the water is 0.20% by mass or more and 10% by mass or less with respect to the entire negative photosensitive resin composition excluding water.

According to the findings of the present inventors, by setting the content of water contained in a negative photosensitive resin composition containing a coupling agent having an acid anhydride group to a predetermined value or more, the cured product contains copper or the like. It was found that the adhesion to metal can be improved. In addition, by appropriately controlling the water content, it is possible to improve the adhesion between the cured film and metal members containing copper, such as circuits and electrodes, even in the cured film after the unsaturated pressurized steam test (HAST). I found out.

Further, according to the findings of the present inventors, a transparent varnish-like photosensitive resin composition (varnish) can be realized by selecting an appropriate water addition treatment. By using a transparent varnish, deterioration of the photosensitivity of the resin film made of the photosensitive resin composition can be suppressed. Although the detailed mechanism is not clear, it is thought that in a resin film made of transparent varnish, the exposure light reaches the inside of the film, so that deterioration of the photocurability of the resin film can be suppressed.

According to the photosensitive resin composition of the present embodiment, since metal adhesion can be enhanced, a semiconductor device with excellent connection reliability and an electronic device using the semiconductor device can be realized.

The resin film of the photosensitive resin composition of the present embodiment is used as, for example, a permanent film, a protective film, an insulating film, a rewiring material, etc. in electrical/electronic equipment (electronic devices). This resin film includes a cured film cured by heating.

Here, “electrical/electronic equipment” refers to electronic Elements, devices, final products, and other equipment related to electricity in general that apply engineering technology.

Among these, the photosensitive resin composition of the present embodiment can be suitably used, for example, as a photosensitive resin composition for a bump protective film. Resin films provided around electrical connection elements such as bumps, lands, and wiring are collectively referred to as "bump protection films." A photosensitive resin composition for a bump protective film refers to a resin composition used for forming a bump protective film.

Concrete examples of the bump protective film include passivation films, overcoat films, interlayer insulating films, etc., which are provided around electrical connection elements. Further, the resin film is provided on the semiconductor chip, but may be provided in the vicinity of the semiconductor chip, and may be provided at a position away from the semiconductor chip such as a rewiring layer or a build-up wiring layer. It may be provided.

Next, the details of the photosensitive resin composition of the present embodiment will be described.

The photosensitive resin composition of this embodiment contains a thermosetting resin.
The thermosetting resin may contain, for example, a component that is solid at 25°C or a component that is liquid at 25°C. These may be used alone or in combination of two or more.
(Epoxy resin)

The thermosetting resin can include an epoxy resin. Thereby, the physical properties and workability of the resin film of the photosensitive resin composition can be improved.

As the epoxy resin, for example, an epoxy resin having two or more epoxy groups in one molecule can be used. Monomers, oligomers, and polymers in general can be used as epoxy resins, and their molecular weights and molecular structures are not particularly limited.
Examples of the epoxy resin include phenol novolak type epoxy resin, cresol novolak type epoxy resin, cresol naphthol type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, phenoxy resin, naphthalene skeleton type epoxy resin, bisphenol A type epoxy resin. resin, bisphenol A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F diglycidyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, glycidyl ether type epoxy resin, cresol novolak type epoxy resin, aromatic poly Functional epoxy resins, aliphatic epoxy resins, aliphatic polyfunctional epoxy resins, alicyclic epoxy resins, polyfunctional alicyclic epoxy resins, and the like. Epoxy resins may be used singly or in combination.

Epoxy resins can include solid epoxy resins having two or more epoxy groups in the molecule. As the solid epoxy resin, those having two or more epoxy groups and being solid at 25° C. (room temperature) can be used. Thereby, the mechanical properties of the resin film of the photosensitive resin composition can be enhanced.

In addition, the epoxy resin may contain a polyfunctional epoxy resin having three or more functionalities in the molecule (that is, a polyfunctional epoxy resin having three or more epoxy groups in one molecule).

Examples of trifunctional or higher polyfunctional epoxy resins include phenol novolak type epoxy resin, cresol novolak type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol A type epoxy resin, and tetramethylbisphenol F. It preferably contains one or more epoxy resins selected from the group consisting of type epoxy resins, and more preferably contains novolac type epoxy resins. This makes it possible to realize an appropriate coefficient of thermal expansion while improving the heat resistance of the resin film.

Epoxy resins can also include liquid epoxy resins having two or more epoxy groups in the molecule. The liquid epoxy resin functions as a film-forming agent and can improve the brittleness of the resin film of the photosensitive resin composition.

As the liquid epoxy resin, an epoxy compound having two or more epoxy groups and being liquid at room temperature of 25° C. can be used. The viscosity of this liquid epoxy resin at 25° C. is, for example, 1 mPa·s to 8000 mPa·s, preferably 5 mPa·s to 1500 mPa·s, and more preferably 10 mPa·s to 1400 mPa·s. .

The liquid epoxy resin may include, for example, one or more selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyldiglycidyl ether and alicyclic epoxy. These may be used alone or in combination of two or more. Among these, alkyldiglycidyl ethers can be used from the viewpoint of reducing cracks after development.

The epoxy equivalent of the liquid epoxy resin is, for example, 100 g/eq or more and 200 g/eq or less, preferably 105 g/eq or more and 180 g/eq or less, and more preferably 110 g/eq or more and 170 g/eq or less. This can improve the brittleness of the resin film.

The lower limit of the content of the liquid epoxy resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more, based on the total nonvolatile components of the photosensitive resin composition. is. This can improve the brittleness of the finally obtained cured film. On the other hand, the upper limit of the content of the liquid epoxy resin is, for example, 40% by mass or less, preferably 35% by mass or less, more preferably 30% by mass, based on the total nonvolatile components of the photosensitive resin composition. It is below. Thereby, the film properties of the cured film can be balanced.

The lower limit of the content of the epoxy resin is, for example, 40% by mass or more, preferably 45% by mass or more, more preferably 50% by mass or more, relative to the total nonvolatile components of the photosensitive resin composition. be. Thereby, the heat resistance and mechanical strength of the finally obtained cured film can be improved. On the other hand, the upper limit of the content of the epoxy resin is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 80% by mass or less with respect to the total nonvolatile components of the photosensitive resin composition. is. Thereby, patterning property can be improved.

In the present embodiment, the non-volatile component of the photosensitive resin composition refers to the remainder after excluding volatile components such as water and solvent. The content of the total non-volatile components of the photosensitive resin composition refers to the content of the total non-volatile components excluding the solvent in the photosensitive resin composition when the solvent is included.

In addition, the photosensitive resin composition of this embodiment may contain other thermosetting resins than the epoxy resin. Other thermosetting resins include, for example, urea resins, resins having a triazine ring such as melamine resins; unsaturated polyester resins; maleimide resins such as bismaleimide compounds; polyurethane resins; diallyl phthalate resins; benzoxazine resins; polyimide resins; polyamideimide resins; etc. These may be used alone or in combination of two or more.

(curing agent)
Moreover, the photosensitive resin composition may contain a curing agent.
The curing agent is not particularly limited as long as it accelerates the polymerization reaction of the thermosetting resin. For example, when the thermosetting resin contains an epoxy resin, a curing agent having a phenolic hydroxyl group is used. . Specifically, a phenol resin can be used.

(phenoxy resin)
The photosensitive resin composition may contain a thermoplastic resin.
Examples of the thermoplastic resin include phenoxy resin, acrylic resin, polyamide resin (e.g., nylon), thermoplastic urethane resin, polyolefin resin (e.g., polyethylene, polypropylene, etc.), polycarbonate, polyester resin (e.g., polyethylene terephthalate, polybutylene terephthalate, etc.), polyacetal, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluororesin (e.g., polytetrafluoroethylene, polyvinylidene fluoride, etc.), modified polyphenylene ether, polysulfone, polyether sulfone, polyarylate, Examples include polyamideimide, polyetherimide, and thermoplastic polyimide. Further, in the photosensitive resin composition, one of these may be used alone, or two or more of them having different weight average molecular weights may be used in combination. A prepolymer may be used in combination.

The thermoplastic resin may include phenoxy resin. Thereby, the flexibility of the resin film of the photosensitive resin composition can be increased.

Although the weight average molecular weight of the phenoxy resin is not particularly limited, it is preferably from 10,000 to 100,000, more preferably from 20,000 to 80,000. By using such a relatively high-molecular-weight phenoxy resin, it is possible to impart good flexibility to the resin film and impart sufficient solubility in a solvent.

In addition, in this embodiment, a weight average molecular weight is measured as a polystyrene conversion value of a gel permeation chromatography (GPC) method, for example.

Moreover, the phenoxy resin may have a reactive group such as an epoxy group at both ends of the molecular chain or inside the molecular chain. The reactive group in the phenoxy resin is capable of cross-linking reaction with the epoxy group in the epoxy resin. By using such a phenoxy resin, the solvent resistance and heat resistance in the resin film can be enhanced.

Moreover, as a phenoxy resin, what is solid at 25 degreeC is used preferably. Specifically, a phenoxy resin having a non-volatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

Examples of the phenoxy resin include bisphenol A-type phenoxy resin, bisphenol F-type phenoxy resin, copolymer phenoxy resin of bisphenol A-type and bisphenol F-type phenoxy resin, biphenyl-type phenoxy resin, bisphenol S-type phenoxy resin, and biphenyl-type phenoxy resin. Examples thereof include copolymerized phenoxy resins with bisphenol S-type phenoxy resins, and one or a mixture of two or more of these is used. Among these, bisphenol A-type phenoxy resins or copolymerized phenoxy resins of bisphenol A-type and bisphenol F-type phenoxy resins are preferably used.

The lower limit of the content of the phenoxy resin is, for example, 20 parts by mass or more, preferably 25 parts by mass or more, and more preferably 30 parts by mass or more relative to the content of the epoxy resin. Thereby, flexibility can be improved. On the other hand, the upper limit of the content of the phenoxy resin is, for example, 60 parts by mass or less, preferably 55 parts by mass or less, and more preferably 50 parts by mass or less. As a result, the solubility of the phenoxy resin is increased, and a photosensitive resin composition having excellent coatability can be realized.

(Photoacid generator)
The photosensitive resin composition of this embodiment contains a photoacid generator. As a result, workability such as sensitivity and resolution can be improved at the time of patterning.
The photosensitive resin composition of the present embodiment is a chemically amplified photosensitive resin composition that uses an acid generated from a photoacid generator as a catalyst, and can be used as a negative photosensitive resin composition.

Examples of the photosensitive agent include onium salt compounds. More specifically, diazonium salts, iodonium salts such as diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylpyridinium salts, benzylpyridinium thiocyanate, dialkylphenacylsulfonium salts, dialkylhydroxyphenylphosphonium salts, etc. and cationic photopolymerization initiators. Among these, triarylsulfonium salts can be used from the viewpoint of patterning properties.

As counter anions for the above onium salt compounds, borate anions, sulfonate anions, gallate anions, phosphorus anions, antimony anions and the like are used.

The content of the photoacid generator is, for example, 0.3% by mass to 5.0% by mass, preferably 0.5% by mass to 4.5% by mass, based on the total solid content of the photosensitive resin composition. %, more preferably 1.0 mass % to 4.0 mass %. Patterning property can be improved by setting it to more than the said lower limit. On the other hand, insulation reliability can be improved by making it below the said lower limit.
In the present specification, "-" means including upper and lower limits unless otherwise specified.

The photosensitive resin composition of the present embodiment may contain a photosensitive agent other than the photoacid generator.
Other photosensitizers include, for example, onium salt compounds. More specifically, diazonium salts, iodonium salts such as diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylpyridinium salts, benzylpyridinium thiocyanate, dialkylphenacylsulfonium salts, dialkylhydroxyphenylphosphonium salts, etc. and cationic photopolymerization initiators.

(Surfactant)
The photosensitive resin composition of this embodiment can contain a surfactant. By including a surfactant, the wettability during coating can be improved, and a uniform resin film and cured film can be obtained. Examples of surfactants include fluorine-based surfactants, silicone-based surfactants, alkyl-based surfactants, and acrylic surfactants.

The surfactant preferably contains a surfactant containing at least one of a fluorine atom and a silicon atom. This contributes to obtaining a uniform resin film (improvement of coatability), improvement of developability, and improvement of adhesion strength. Such a surfactant is preferably, for example, a nonionic surfactant containing at least one of a fluorine atom and a silicon atom. Examples of commercial products that can be used as surfactants include F-251, F-253, F-281, F-430, F-477, F-551 of the "Megafac" series manufactured by DIC Corporation, F-552, F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F- 565, F-568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94, etc. Fluorine-containing oligomer structure surfactants, fluorine-containing nonionic surfactants such as Phthagent 250 and Phthagent 251 manufactured by Neos Co., Ltd., SILFOAM (registered trademark) series manufactured by Wacker Chemie (for example, SD 100 TS , SD 670, SD 850, SD 860, SD 882).

The content of the surfactant is, for example, 0.001 to 1% by mass, preferably 0.005 to 0.5% by mass, based on the total amount of nonvolatile components in the photosensitive resin composition. .

(adherence aid)
The photosensitive resin composition of this embodiment contains an adhesion aid. Thereby, the adhesion with the inorganic material can be further improved.

The adhesion aid is not particularly limited, but silane coupling agents such as aminosilane, epoxysilane, acrylsilane, mercaptosilane, vinylsilane, ureidosilane, or sulfidesilane can be used. Silane coupling agents may be used alone or in combination of two or more. Among these, it is more preferable to use epoxysilane (that is, a compound containing both an epoxy site and a group that generates a silanol group by hydrolysis in one molecule).

From the viewpoint of metal adhesion, the photosensitive resin composition contains, as a silane coupling agent, a coupling agent having an acid anhydride group in the molecule.
Examples of the coupling agent having an acid anhydride group include 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylpropylsuccinic anhydride, and 3-dimethylmethoxysilylpropylsuccinic anhydride. be done.

Examples of the amino group-containing coupling agent include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane, Silane, γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-amino Propylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane and the like.
Examples of the epoxy group-containing coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidyl. propyltrimethoxysilane and the like.
Examples of acrylic group-containing coupling agents or methacrylic group-containing coupling agents include γ-(methacryloxypropyl)trimethoxysilane, γ-(methacryloxypropyl)methyldimethoxysilane, γ-(methacryloxypropyl)methyldiethoxysilane. etc.
Examples of the mercapto group-containing coupling agent include 3-mercaptopropyltrimethoxysilane.
Examples of the vinyl group-containing coupling agent include vinyltris(β-methoxyethoxy)silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.
Ureido group-containing coupling agents include, for example, 3-ureidopropyltriethoxysilane.
Examples of the sulfide group-containing coupling agent include bis(3-(triethoxysilyl)propyl)disulfide and bis(3-(triethoxysilyl)propyl)tetrasulfide.

Although silane coupling agents are listed here, titanium coupling agents, zirconium coupling agents, and the like may also be used.

The content of the adhesion aid is, for example, preferably 0.3 to 5% by mass, preferably 0.4 to 4%, based on the total amount of nonvolatile components in the photosensitive resin composition. is more preferable, and it can be 0.5 to 3% by mass.

(Additive)
In addition to the above components, other additives may be added to the photosensitive resin composition of the present embodiment, if necessary. Other additives include, for example, antioxidants, fillers such as silica, sensitizers, and film-forming agents.

(solvent)
The photosensitive resin composition of this embodiment can contain a solvent. Organic solvents can be included as solvents. Any organic solvent can be used without particular limitation as long as it can dissolve each component of the photosensitive resin composition and does not chemically react with each component.

Examples of organic solvents include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, dipropylene glycol methyl-n-propyl ether, butyl acetate, γ-butyrolactone and the like. These may be used singly or in combination.

The solvent is preferably used so that the total concentration of non-volatile components in the photosensitive resin composition is, for example, 20 to 60% by mass. By setting it as this range, each component can fully be melt|dissolved and favorable coating property can be ensured. Moreover, the viscosity of the photosensitive resin composition can be appropriately controlled by adjusting the content of the non-volatile component.

The viscosity of the varnish-like photosensitive resin composition at 25° C. is, for example, 10 cP to 6000 cP, preferably 20 cP to 5000 cP, more preferably 30 cP to 4000 cP. By setting the viscosity within the above numerical range, the thickness of the coating film can be appropriately controlled. For example, a thickness of 1 μm to 100 μm, preferably 3 μm to 80 μm, more preferably 5 μm to 50 μm can be achieved.

The lower limit of the content of water contained in the negative photosensitive resin composition is, for example, 0.20% by mass or more, preferably 0, relative to the entire photosensitive resin composition excluding water (100% by mass). 0.40 mass % or more, more preferably 0.60 mass % or more. Thereby, the metal adhesion of the cured film of the photosensitive resin film can be improved. Moreover, by setting the water content to 0.4% by mass or more, the metal adhesion of the cured film after HAST can be improved. On the other hand, the upper limit of the water content is, for example, 10% by mass or less, preferably 5.5% by mass or less, more preferably 3 0% by mass or less. This can prevent the water component from separating or becoming micellar in the organic solvent. Moreover, clouding of the varnish can be suppressed.

In this embodiment, (ultra)pure water, ion-exchanged water, distilled water, or the like can be used as water.

Moreover, the method of adding water to the negative photosensitive resin composition is not particularly limited. A method of adding water to a mixture of the above components, or preparing a preparation solution by mixing any of the components with water, and then mixing the preparation solution with other components. I can think of a way. These may be used alone or in combination of two or more.

Although the detailed mechanism is not clear, water hydrolyzes the coupling agent having an acid anhydride group, so that covalent bonds, hydrogen bonds, Alternatively, it is considered that the adhesion can be improved by coordinative bonding.

The upper limit of the haze value of the negative photosensitive resin composition at 25° C. measured using a haze meter is, for example, 3.0% or less, preferably 2.5% or less, more preferably 2.0%. It is below. Thereby, a transparent varnish-like photosensitive resin composition (varnish) can be realized. By using a transparent varnish, deterioration of the photosensitivity of the resin film made of the photosensitive resin composition can be suppressed. Although the lower limit of the haze value is not particularly limited, it may be, for example, 0.01% or more.

Next, the semiconductor device and electronic equipment of this embodiment will be described.

The semiconductor device of this embodiment includes a semiconductor chip and a resin film containing a cured product of the negative photosensitive resin composition of this embodiment provided on the semiconductor chip.

Further, the semiconductor device may include a rewiring layer embedded in a resin film, and the rewiring layer may be electrically connected to the semiconductor chip.

Electronic equipment according to the present embodiment includes the semiconductor device described above.

FIG. 1 is a longitudinal sectional view showing an example of the semiconductor device of this embodiment. Moreover, FIG. 2 is a partially enlarged view of a region surrounded by a dashed line in FIG. In the following description, the upper side in FIG. 1 is called "upper", and the lower side is called "lower".

A semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

The through electrode substrate 2 includes an insulating layer 21 , a plurality of through wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21 , a semiconductor chip 23 embedded inside the insulating layer 21 , and provided on the lower surface of the insulating layer 21 . an upper wiring layer 25 provided on the upper surface of the insulating layer 21; and solder bumps 26 provided on the lower surface of the lower wiring layer 24. As shown in FIG.

The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, bonding wires 33 electrically connecting the semiconductor chip 32 and the package substrate 31, and the semiconductor chip 32 and the bonding wires 33. It has an embedded sealing layer 34 and solder bumps 35 provided on the lower surface of the package substrate 31 .

A semiconductor package 3 is stacked on the through electrode substrate 2 . Thereby, the solder bumps 35 of the semiconductor package 3 and the upper wiring layers 25 of the through electrode substrate 2 are electrically connected.

In such a semiconductor device 1, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, the height can be easily reduced. Therefore, it is possible to contribute to miniaturization of electronic equipment incorporating the semiconductor device 1 .

Moreover, since the through electrode substrate 2 and the semiconductor package 3 having different semiconductor chips are stacked, the mounting density per unit area can be increased. Therefore, it is possible to achieve both miniaturization and high performance.

The through electrode substrate 2 and the semiconductor package 3 will be further detailed below.
The lower wiring layer 24 and the upper wiring layer 25 provided in the through electrode substrate 2 shown in FIG. 2 each include an insulating layer, a wiring layer, a through wiring, and the like. As a result, the lower wiring layer 24 and the upper wiring layer 25 include wiring inside and on the surface, and are electrically connected to each other through the through wiring 221 penetrating the insulating layer 21 .

Wiring layers included in the lower wiring layer 24 are connected to the semiconductor chip 23 and the solder bumps 26 . Therefore, the lower wiring layer 24 functions as a rewiring layer for the semiconductor chip 23 and the solder bumps 26 function as external terminals of the semiconductor chip 23 .

The through wiring 221 shown in FIG. 2 is provided so as to penetrate the insulating layer 21 as described above. As a result, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through electrode substrate 2 and the semiconductor package 3 can be stacked. can.

A wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 and the solder bumps 35 . Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a rewiring layer for the semiconductor chip 23, and functions as an interposer interposed between the semiconductor chip 23 and the package substrate 31. also works.

The effect of reinforcing the insulating layer 21 is obtained because the through wiring 221 penetrates the insulating layer 21 . Therefore, even when the mechanical strength of the lower wiring layer 24 and the upper wiring layer 25 is low, the mechanical strength of the entire through electrode substrate 2 can be prevented from being lowered. As a result, the thickness of the lower wiring layer 24 and the upper wiring layer 25 can be further reduced, and the height of the semiconductor device 1 can be further reduced.

The semiconductor device 1 shown in FIG. 1 also includes a through wire 222 provided so as to penetrate the insulating layer 21 located on the upper surface of the semiconductor chip 23 in addition to the through wire 221 . Thereby, electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.

The insulating layer 21 is provided so as to cover the semiconductor chip 23 . This enhances the effect of protecting the semiconductor chip 23 . As a result, reliability of the semiconductor device 1 can be improved. Also, the semiconductor device 1 can be easily applied to a mounting system such as the package-on-package structure according to the present embodiment.

The diameter W (see FIG. 2) of the through wire 221 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 2 to 80 μm. Thereby, the electrical conductivity of the through wiring 221 can be ensured without impairing the mechanical properties of the insulating layer 21 .

The semiconductor package 3 shown in FIG. 1 may be any form of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Package), Forms such as LF-BGA (Lead Flame BGA) are included.

The arrangement of the semiconductor chips 32 is not particularly limited, but as an example in FIG. 1, a plurality of semiconductor chips 32 are stacked. As a result, the mounting density is increased. The plurality of semiconductor chips 32 may be arranged side by side in the planar direction, or may be arranged side by side in the planar direction while being stacked in the thickness direction.

The package substrate 31 may be any substrate, but is a substrate including an insulating layer, a wiring layer, a through wiring, etc., which are not shown, for example. Among them, the solder bump 35 and the bonding wire 33 can be electrically connected via the through wiring.

The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wires 33 can be protected from external forces and the external environment.

Since the semiconductor chip 23 provided in the through electrode substrate 2 and the semiconductor chip 32 provided in the semiconductor package 3 are arranged close to each other, advantages such as high speed mutual communication and low loss can be obtained. can be done. From this point of view, for example, one of the semiconductor chip 23 and the semiconductor chip 32 is a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an AP (Application Processor) or other computing element, and the other is a DRAM (Dynamic Random Access). Memory), flash memory, or the like, these elements can be arranged close to each other in the same device. As a result, the semiconductor device 1 that achieves both high functionality and miniaturization can be realized.

<Method for manufacturing a semiconductor device>
Next, a method for manufacturing the semiconductor device 1 shown in FIG. 1 will be described.

3A to 3D are process diagrams showing a method of manufacturing the semiconductor device 1 shown in FIG. 4 to 6 are diagrams for explaining a method of manufacturing the semiconductor device 1 shown in FIG. 1, respectively.

The method of manufacturing the semiconductor device 1 includes a chip placement step S1 of obtaining an insulating layer 21 so as to embed a semiconductor chip 23 and through wirings 221 and 222 provided on a substrate 202, and an upper layer on the insulating layer 21 and on the semiconductor chip 23. An upper wiring layer forming step S2 for forming the wiring layer 25, a substrate peeling step S3 for peeling the substrate 202, a lower wiring layer forming step S4 for forming the lower wiring layer 24, a solder bump 26 is formed, and a through electrode substrate is formed. 2 and a stacking step S6 of stacking the semiconductor package 3 on the through electrode substrate 2 .

In the upper wiring layer forming step S2, the photosensitive resin varnish 5 (a varnish-like photosensitive resin composition) is placed on the insulating layer 21 and the semiconductor chip 23 to form a photosensitive resin layer 2510. A film placement step S20, a first exposure step S21 for exposing the photosensitive resin layer 2510, a first development step S22 for developing the photosensitive resin layer 2510, and a curing treatment for the photosensitive resin layer 2510. A first curing step S23, a wiring layer forming step S24 for forming a wiring layer 253, and a second resin for obtaining a photosensitive resin layer 2520 by disposing a photosensitive resin varnish 5 on the photosensitive resin layer 2510 and the wiring layer 253. A film placement step S25, a second exposure step S26 of exposing the photosensitive resin layer 2520, a second developing step S27 of developing the photosensitive resin layer 2520, and a curing treatment of the photosensitive resin layer 2520. A second curing step S28 and a through-wiring forming step S29 of forming the through-wiring 254 in the opening 424 (through-hole) are included.

Each step will be described below in sequence. In addition, the following manufacturing method is an example, and is not limited to this.

[1] Chip placement step S1
First, as shown in FIG. 4A, a chip including a substrate 202, a semiconductor chip 23 and through wirings 221 and 222 provided on the substrate 202, and an insulating layer 21 provided so as to bury them An embedded structure 27 is prepared.

The constituent material of the substrate 202 is not particularly limited, but examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials, and the like. Also, the substrate 202 may be a semiconductor wafer such as a silicon wafer, a glass wafer, or the like.

The semiconductor chip 23 is adhered onto the substrate 202 . In this manufacturing method, as an example, a plurality of semiconductor chips 23 are arranged side by side on the same substrate 202 while being separated from each other. The plurality of semiconductor chips 23 may be of the same type, or may be of different types. Alternatively, the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

An interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23 as required. The interposer functions as a rewiring layer of the semiconductor chip 23, for example. Therefore, the interposer may have pads (not shown) for electrical connection with electrodes of the semiconductor chip 23, which will be described later. As a result, the pad spacing and arrangement pattern of the semiconductor chip 23 can be changed, and the degree of freedom in designing the semiconductor device 1 can be further enhanced.

For such interposers, for example, inorganic substrates such as silicon substrates, ceramic substrates and glass substrates, organic substrates such as resin substrates, and the like are used.

The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin such as those listed as components of the photosensitive resin composition, and may be an ordinary sealing layer used in the technical field of semiconductors. It may be a stopping material.

Examples of materials constituting the through-wirings 221 and 222 include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like.

A chip-embedded structure 27 manufactured by a method different from the above may be prepared.

[2] Upper wiring layer forming step S2
Next, an upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor chip 23 .

[2-1] First resin film placement step S20
First, as shown in FIG. 4B, the photosensitive resin varnish 5 is applied (arranged) on the insulating layer 21 and the semiconductor chip 23 . As a result, a liquid film of photosensitive resin varnish 5 is obtained as shown in FIG. 4(c). The photosensitive resin varnish 5 is the photosensitive resin composition of the present embodiment and is a varnish having photosensitivity.

Application of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spray device, an inkjet device, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 (see FIG. 4D) can be formed. As a result, the upper wiring layer 25 can be made thinner, which facilitates the thinning of the semiconductor device 1 .

The viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotation speed of 100 rpm.

Next, the liquid film of the photosensitive resin varnish 5 is dried. As a result, a photosensitive resin layer 2510 shown in FIG. 4(d) is obtained.

Drying conditions for the photosensitive resin varnish 5 are not particularly limited, but include, for example, heating at a temperature of 80 to 150° C. for 1 to 60 minutes.

In this step, instead of the process of applying the photosensitive resin varnish 5, a process of disposing a photosensitive resin film formed by forming the photosensitive resin varnish 5 into a film may be employed. The photosensitive resin film is the photosensitive resin composition of the present embodiment and is a resin film having photosensitivity.

The photosensitive resin film is produced by applying, for example, a photosensitive resin varnish 5 onto a substrate such as a carrier film using various coating devices, and then drying the resulting coating film.

After forming the photosensitive resin layer 2510 in this way, the photosensitive resin layer 2510 is subjected to a pre-exposure heat treatment, if necessary. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 are stabilized, and the reaction in the first exposure step S21 described later can be stabilized. On the other hand, by heating under the heating conditions described later, adverse effects on the photoacid generator due to heating can be minimized.

The temperature of the pre-exposure heat treatment is preferably 70 to 130.degree. C., more preferably 75 to 120.degree. C., still more preferably 80 to 110.degree. If the temperature of the pre-exposure heat treatment is lower than the lower limit, there is a risk that the pre-exposure heat treatment may fail to achieve the purpose of stabilizing molecules. On the other hand, if the temperature of the pre-exposure heat treatment exceeds the upper limit, the movement of the photo-acid generator becomes too active, and the influence that acid is less likely to be generated even when light is irradiated in the first exposure step S21 described later. becomes wider, and the processing precision of patterning may deteriorate.

In addition, the time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment. 3 to 6 minutes. If the pre-exposure heat treatment time is less than the lower limit, the heating time will be insufficient, so there is a risk that the pre-exposure heat treatment will fail to achieve the purpose of stabilizing molecules. On the other hand, if the pre-exposure heat treatment time exceeds the above upper limit, the heating time is too long, and even if the pre-exposure heat treatment temperature is within the above range, the action of the photoacid generator is inhibited. There is a risk that it will be lost.

The atmosphere for the heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like.

Also, the atmospheric pressure is not particularly limited, and may be under reduced pressure or under increased pressure. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-2] First exposure step S21
Next, the photosensitive resin layer 2510 is subjected to exposure processing.

First, as shown in FIG. 4D, a mask 412 is arranged on a predetermined region on the photosensitive resin layer 2510 . Then, light (activating radiation) is irradiated through a mask 412 . As a result, the photosensitive resin layer 2510 is exposed according to the pattern of the mask 412 .

Note that FIG. 4D illustrates a case where the photosensitive resin layer 2510 has so-called negative photosensitivity. In this example, the region of the photosensitive resin layer 2510 corresponding to the light shielding portion of the mask 412 is imparted with solubility in the developer.

On the other hand, in the region corresponding to the transparent portion of the mask 412, for example, acid is generated by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction of the thermosetting resin in the process described below.

Also, the exposure amount in the exposure treatment is not particularly limited, but is preferably 100 to 2000 mJ/cm ² , more preferably 200 to 1000 mJ/cm ² . Thereby, underexposure and overexposure in the photosensitive resin layer 2510 can be suppressed. As a result, it is possible to finally achieve high patterning accuracy.
After that, if necessary, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment.

The temperature of the post-exposure heat treatment is not particularly limited, but is preferably 50 to 150°C, more preferably 50 to 130°C, still more preferably 55 to 120°C, and particularly preferably 60 to 110°C. be done. By performing post-exposure heat treatment at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be sufficiently reacted in a shorter time. By setting the temperature within the above range, it is possible to suppress deterioration in the processing accuracy of patterning due to promotion of acid diffusion.

By setting the temperature of the post-exposure heat treatment to the lower limit or more, the reaction rate of the thermosetting resin can be increased, and the productivity can be improved. On the other hand, by setting the temperature of the post-exposure heat treatment to be equal to or lower than the upper limit, it is possible to suppress deterioration in processing accuracy of patterning due to promotion of acid diffusion.

On the other hand, the time of the post-exposure heat treatment is appropriately set according to the temperature of the post-exposure heat treatment. 3 to 15 minutes. By performing the post-exposure heat treatment for such a time, the thermosetting resin can be sufficiently reacted, and diffusion of the acid can be suppressed, thereby suppressing deterioration of the processing accuracy of patterning.

The atmosphere of the post-exposure heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like.

Moreover, the atmospheric pressure of the post-exposure heat treatment is not particularly limited, and may be under reduced pressure or under increased pressure. As a result, pre-exposure heat treatment can be performed relatively easily. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-3] First development step S22
Next, the photosensitive resin layer 2510 is developed. As a result, openings 423 penetrating through the photosensitive resin layer 2510 are formed in regions corresponding to the light shielding portions of the mask 412 (see FIG. 5E).
Examples of the developer include organic developer and water-soluble developer.

[2-4] First curing step S23
After the development process, the photosensitive resin layer 2510 is subjected to a curing process (post-development heat treatment). Conditions for the curing treatment are not particularly limited, but the heating temperature is about 160 to 250° C. and the heating time is about 30 to 240 minutes. As a result, the photosensitive resin layer 2510 can be cured and the organic insulating layer 251 can be obtained while suppressing the thermal effect on the semiconductor chip 23 .

[2-5] Wiring layer forming step S24
Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5F). The wiring layer 253 is formed by, for example, obtaining a metal layer using a vapor deposition method such as a sputtering method or a vacuum vapor deposition method, followed by patterning using a photolithography method and an etching method.

Prior to forming the wiring layer 253, surface modification treatment such as plasma treatment may be performed.

[2-6] Second resin film placement step S25
Next, as shown in FIG. 5G, a photosensitive resin layer 2520 is obtained in the same manner as in the first resin film placement step S20. A photosensitive resin layer 2520 is arranged to cover the wiring layer 253 .

After that, pre-exposure heat treatment is applied to the photosensitive resin layer 2520 as necessary. The processing conditions are, for example, the conditions described in the first resin film placement step S20.

[2-7] Second exposure step S26
Next, the photosensitive resin layer 2520 is exposed. The processing conditions are, for example, the conditions described in the first exposure step S21.

After that, if necessary, the photosensitive resin layer 2520 is subjected to post-exposure heat treatment. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second development step S27
Next, the photosensitive resin layer 2520 is developed. Processing conditions are, for example, the conditions described in the first development step S22. As a result, openings 424 penetrating through the photosensitive resin layers 2510 and 2520 are formed (see FIG. 5(h)).

[2-9] Second curing step S28
After the development process, the photosensitive resin layer 2520 is subjected to a curing process (post-development heat treatment). The curing conditions are, for example, the conditions described in the first curing step S23. Thereby, the photosensitive resin layer 2520 is cured to obtain the organic insulating layer 252 (see FIG. 6(i)).

Although the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252 in this embodiment, it may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be added repeatedly.

[2-10] Through-wiring forming step S29
Next, the through wiring 254 shown in FIG. 6I is formed in the opening 424 .

A known method is used to form the through wiring 254, and for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 252 . A seed layer is formed on the top surface of the organic insulating layer 252 as well as the inner surfaces (sides and bottom) of the opening 424 .

For example, a copper seed layer is used as the seed layer. Also, the seed layer is formed by, for example, a sputtering method.

Also, the seed layer may be composed of the same metal as the through-wiring 254 to be formed, or may be composed of a different metal.

Next, a resist layer (not shown) is formed on a region of the seed layer (not shown) other than the opening 424 . Using this resist layer as a mask, the opening 424 is filled with metal. Electroplating, for example, is used for this filling. Examples of metals to be filled include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like. In this manner, the conductive material is embedded in the opening 424 to form the through wiring 254 .

Next, the resist layer (not shown) is removed. Furthermore, the seed layer (not shown) on the organic insulating layer 252 is removed. For this, for example, a flash etching method can be used.
It should be noted that the position where the through wire 254 is formed is not limited to the position shown in the figure.

[3] Substrate peeling step S3
Next, as shown in FIG. 6(j), the substrate 202 is peeled off. As a result, the lower surface of the insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4
Next, as shown in FIG. 6(k), a lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. Next, as shown in FIG. The lower wiring layer 24 may be formed by any method, for example, it may be formed in the same manner as the upper wiring layer forming step S2 described above.

The lower wiring layer 24 formed in this way is electrically connected to the upper wiring layer 25 via the through wiring 221 .

[5] Solder bump formation step S5
Next, as shown in FIG. 6L, solder bumps 26 are formed on the lower wiring layer 24 . Moreover, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.
The through electrode substrate 2 is obtained as described above.

The through electrode substrate 2 shown in FIG. 6(L) can be divided into a plurality of regions. Therefore, a plurality of through electrode substrates 2 can be efficiently manufactured by singulating the through electrode substrates 2 along the dashed line shown in FIG. 6(L), for example. In addition, for example, a diamond cutter or the like can be used for singulation.

[6] Lamination step S6
Next, the semiconductor package 3 is arranged on the through electrode substrate 2 that has been divided into pieces. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

Such a method for manufacturing the semiconductor device 1 can be applied to a wafer level process and a panel level process using a large-sized substrate. As a result, the manufacturing efficiency of the semiconductor device 1 can be increased and the cost can be reduced.

<Modified Example of Semiconductor Device>
Next, a modified example of the semiconductor device according to the embodiment will be described.

(First modification)
First, the first modified example will be described.
FIG. 7 is a partially enlarged cross-sectional view showing a first modification of the semiconductor device according to the embodiment.
A first modified example will be described below, but in the following description, differences from the embodiment shown in FIGS. 1 and 2 will be mainly described, and descriptions of similar items will be omitted. 1 and 2 are denoted by the same reference numerals in FIG.

A semiconductor device 1A shown in FIG. 7 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except for the structure of the lower wiring layer. That is, the semiconductor device 1A shown in FIG. 7 includes a semiconductor chip 23 provided with lands 231, a lower wiring layer 24A, and solder bumps 26. As shown in FIG. The structure of the lower wiring layer 24A is different from the structure of the lower wiring layer 24 shown in FIGS.

Specifically, the lower wiring layer 24A shown in FIG. 7 includes an organic insulating layer 240 provided on the lower surface of the semiconductor chip 23 and an organic insulating layer 241 provided below the organic insulating layer 240. . At least one of these organic insulating layers 240 and 241 is formed using a photosensitive resin composition for bump protection film. The bottom surface of the semiconductor chip 23 is covered with organic insulating layers 240 and 241 .

The lower wiring layer 24A shown in FIG. 7 also includes a bump adhesion layer 245 electrically connected to both the land 231 and the solder bump 26. As shown in FIG.

By using the photosensitive resin composition for the bump protection film in manufacturing the first modification, the patterning accuracy is high, and deterioration of the metal contained in the land 231 and the bump adhesion layer 245 can be suppressed. Therefore, a highly reliable semiconductor device 1A can be obtained.

(Second modification)
Next, a second modified example will be described.
FIG. 8 is a partially enlarged cross-sectional view showing a second modification of the semiconductor device according to the embodiment.
The second modification will be described below, but in the following description, differences from the embodiment shown in FIGS. 1 and 2 will be mainly described, and descriptions of the same items will be omitted. 1 and 2 are denoted by the same reference numerals in FIG.

A semiconductor device 1B shown in FIG. 8 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except for the structure of the lower wiring layer. That is, the semiconductor device 1B shown in FIG. 8 includes a semiconductor chip 23 provided with lands 231, a lower wiring layer 24B, and solder bumps 26. As shown in FIG. The structure of the lower wiring layer 24B is different from the structure of the lower wiring layer 24 shown in FIGS.

Specifically, the lower wiring layer 24B shown in FIG. and an organic insulating layer 242 provided below. At least one of these organic insulating layers 240, 241, 242 is formed using a photosensitive resin composition for bump protection film.

The lower wiring layer 24B shown in FIG. 8 includes a wiring layer 243 electrically connected to the land 231, a bump adhesion layer 245 electrically connected to both the wiring layer 243 and the solder bumps 26, It has Organic insulating layers 240 and 241 are interposed between the semiconductor chip 23 and the wiring layer 243 , and the lower surface of the wiring layer 243 is covered with the organic insulating layer 242 .

When manufacturing such a second modification, by using the photosensitive resin composition for the bump protective film, the patterning accuracy is high, and the deterioration of the metal contained in the land 231, the wiring layer 243, and the bump adhesion layer 245 is suppressed. be able to. Therefore, a highly reliable semiconductor device 1B can be obtained.

<Electronic device>
The electronic device according to this embodiment includes the semiconductor device according to this embodiment described above.

The electronic device according to the present embodiment is not particularly limited as long as it includes such a semiconductor device. communication equipment, robots, industrial equipment such as machine tools, vehicle control computers, in-vehicle equipment such as car navigation systems, and the like.

Although the present invention has been described above based on the illustrated embodiments, the present invention is not limited to these.

For example, the method of manufacturing a semiconductor device according to the present invention may be obtained by adding an arbitrary step to the above-described embodiment.

Further, the photosensitive resin composition, semiconductor device and electronic device of the present invention may be obtained by adding arbitrary elements to the above embodiments.

In addition to semiconductor devices, the photosensitive resin composition is also applied to, for example, MEMS (Micro Electro Mechanical Systems), bump protective films of various sensors, liquid crystal display devices, and bump protective films of display devices such as organic EL devices. It is possible.

Moreover, the form of the package of the semiconductor device is not limited to the illustrated form, and may be of any form.

EXAMPLES The present invention will be described in detail below with reference to Examples, but the present invention is not limited to the description of these Examples.

Details of raw materials for each component in Table 1 are as follows.
(Epoxy resin)
Epoxy resin 1: Epoxy resin 1: Polyfunctional epoxy resin represented by the following structure (EPPN201 manufactured by Nippon Kayaku Co., Ltd., phenolic novolak type epoxy resin, solid at 25 ° C., n = about 5)

(phenoxy resin)
- Phenoxy resin 1: Bisphenol A type phenoxy resin (jER1256 manufactured by Mitsubishi Chemical Corporation, Mw: about 50,000))

(Photoacid generator)
- Photoacid generator 1: onium salt compound (manufactured by San-Apro, CPI-310B)

(Surfactant)
・Surfactant 1: fluorine-containing group-lipophilic group-containing oligomer (R-41, manufactured by DIC)

(coupling agent)
Coupling agent 1: silane coupling agent having an acid anhydride group (X-12-967C, manufactured by Shin-Etsu Chemical Co., Ltd.)

(solvent)
- Solvent 1: propylene glycol monomethyl ether acetate (PGMEA)

(Preparation of negative photosensitive resin composition)
・Examples 1 to 6
First, a coupling agent is added to pure water according to the molar ratio of the coupling agent and water shown in Table 1, and the resulting mixture is stirred and mixed at room temperature for the mixing time shown in Table 1 to obtain a prepared solution. rice field.
Subsequently, according to the blending ratio shown in Table 1, the prepared solution, epoxy resin, phenoxy resin, photoacid generator and surfactant were dissolved in a solvent (PGMEA) and mixed at room temperature for 2.5 hours. to obtain a mixed solution. Subsequently, pure water was added to the mixed solution so that the mixing ratio (in terms of mass) shown in Table 1 was obtained, and mixed again.
Thereafter, the mixed solution was filtered through a 0.2 μm polypropylene filter to obtain a varnish-like negative photosensitive resin composition having a viscosity of about 100 mPa·s at 25°C.
The viscosity of the photosensitive resin composition was measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotational speed of 100 rpm.
The water content in Table 1 represents the water content (% by mass) with respect to the entire photosensitive resin composition (100 mass) excluding water.

・Comparative example 1
Without preparing the above preparation solution, a coupling agent, an epoxy resin, a phenoxy resin, a photoacid generator and a surfactant were dissolved in a solvent (PGMEA) according to the mixing ratio shown in Table 1. After mixing for 2.5 hours, a mixed solution was obtained. Subsequently, pure water was added to the mixed solution so that the mixing ratio (in terms of mass) shown in Table 1 was obtained, and mixed again.
Thereafter, the mixed solution was filtered through a 0.2 μm polypropylene filter to obtain a varnish-like negative photosensitive resin composition having a viscosity of about 100 mPa·s at 25°C.
The viscosity of the photosensitive resin composition was measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotational speed of 100 rpm.

The obtained negative photosensitive resin composition was evaluated based on the following evaluation items.

<Appearance of varnish, haze value>
- Appearance evaluation The obtained varnish-like negative photosensitive resin composition was placed in a transparent glass container, and the appearance of the varnish in the container was visually evaluated. Table 1 shows the results.

• Haze value The resulting varnish-like negative photosensitive resin composition was placed in a transparent glass container, stirred at a rotation speed of 100 rpm for 10 minutes, and allowed to stand for the required time to remove bubbles generated. After that, the haze value of the varnish in the container was measured using an apparatus name: NDH2000 (manufactured by Nippon Denshoku Industries Co., Ltd.).

<Adhesion evaluation>
- Production of test sample A for evaluation An 8-inch silicon wafer having a Cu film (Cu sputtered film) having a thickness of 0.3 µm formed on the surface thereof was prepared as a base substrate.
Subsequently, the resulting photosensitive resin composition was spin-coated on the base substrate to form a spin-coated film (liquid film). The liquid coating was dried by heating at 100° C. for 3 minutes to obtain a photosensitive resin film having a thickness of 5 to 30 μm.
Subsequently, the entire surface of the resulting photosensitive resin film was exposed to i-rays with a wavelength of 365 nm at an exposure amount of 600 mJ/cm ² using an automatic exposure machine.
Subsequently, the silicon wafer was heated at 70° C. for 5 minutes on a hot plate in the atmosphere.
Subsequently, the silicon wafer was immersed in PGMEA for 20 seconds.
After that, the silicon wafer was heated at 170° C. for 180 minutes in a nitrogen atmosphere to cure the photosensitive resin film, thereby obtaining an evaluation test sample A in which a cured film was formed on the surface of the base substrate.

- Preparation of evaluation test sample B The obtained evaluation test sample A was placed in an apparatus, and HAST (unsaturated pressurized steam test) was performed for 96 hours under the conditions of a temperature of 130 ° C. and a relative humidity of 85% RH. After that, the silicon wafer was taken out from the apparatus, and an evaluation test sample B was obtained.

Cross-cut test The following cross-cut test was performed to evaluate the adhesion between the cured films of the obtained evaluation test samples A and B and the Cu film on the surface of the underlying substrate.
First, 100 grids of 1 mm square were formed on the cured film with a cutter knife using an apparatus name: CrossCut-Master 3000 (manufactured by Allgood). A cellophane adhesive tape (manufactured by Sekisui Chemical Co., Ltd., trade name: LP-18) was attached to the surface of the cured film, and then the tape was peeled off in the direction of 60° while holding the edge of the tape. This operation was repeated three times in the order of the vertical direction of the grid, the horizontal direction by changing the angle of 90 degrees, and the vertical direction again. After that, among the 100 squares, the number of squares (crosscut) peeled from the base surface was measured.
The evaluation test sample A was used to evaluate the adhesion after curing, and the evaluation test sample B was used to evaluate the adhesion after HAST.

In the cross-cut test, X was the number of grids that were peeled off. In this case, the smaller the X/100, the higher the adhesion. Table 1 shows the evaluation results.
In Table 1, if the result of the cross-cut test is "0/100", it means that the cured film was not peeled off at all.

<Appearance evaluation of cured film>
In the evaluation test sample A obtained in <Evaluation of Adhesion> above, the surface state of the cured film was observed.
The case where the surface of the cured film was not roughened was rated as ◯, the case where the surface of the cured film was slightly roughened was rated as Δ, and the case where the surface of the cured film was significantly roughened was rated as ×.

It was found that the negative photosensitive resin compositions of Examples 1 to 6 are superior to Comparative Example 1 in adhesion to metals such as copper after curing. Further, it was found that the negative photosensitive resin compositions of Examples 1 and 3 to 6 are even more excellent in adhesion after HAST than Example 2.
On the other hand, the negative photosensitive resin compositions of Examples 1 to 6 showed excellent results in the appearance of the cured films, and it was found that the cured films were excellent in appearance analysis characteristics by light.
Such negative photosensitive resin compositions of Examples 1 to 6 are expected to be suitably used for bump protective films such as insulating films of wiring layers.

1 semiconductor device 1A semiconductor device 1B semiconductor device 2 through electrode substrate 3 semiconductor package 5 photosensitive resin varnish 21 insulating layer 23 semiconductor chip 24 lower wiring layer 24A lower wiring layer 24B lower wiring layer 25 upper wiring layer 26 solder bump 27 chip embedding Structure 31 Package substrate 32 Semiconductor chip 33 Bonding wire 34 Sealing layer 35 Solder bump 202 Substrate 221 Through wiring 222 Through wiring 231 Land 240 Organic insulation layer 241 Organic insulation layer 242 Organic insulation layer 243 Wiring layer 245 Bump adhesion layer 251 Organic insulation Layer 252 Organic insulating layer 253 Wiring layer 254 Penetrating wiring 412 Mask 423 Opening 424 Opening 2510 Photosensitive resin layer 2520 Photosensitive resin layer S1 Chip placement step S2 Upper wiring layer formation step S20 First resin film placement step S21 First exposure Step S22 First developing step S23 First curing step S24 Wiring layer forming step S25 Second resin film placement step S26 Second exposure step S27 Second developing step S28 Second curing step S29 Penetration wire forming step S3 Substrate peeling step S4 Lower layer wiring Layer forming step S5 Solder bump forming step S6 Stacking step W Diameter

Claims (13)

a thermosetting resin;
a photoacid generator;
a coupling agent having an acid anhydride group;
A negative photosensitive resin composition comprising water and
The negative photosensitive resin composition, wherein the water content is 0.20% by mass or more and 10% by mass or less with respect to the entire negative photosensitive resin composition excluding water. The negative photosensitive resin composition according to claim 1,
A negative photosensitive resin composition having a haze value of 3.0 or less at 25° C. measured using a haze meter. The negative photosensitive resin composition according to claim 1 or 2,
A negative photosensitive resin composition containing an organic solvent. The negative photosensitive resin composition according to any one of claims 1 to 3,
A negative photosensitive resin composition, wherein the content of non-volatile components in the negative photosensitive resin composition is 20% by mass or more and 60% by mass or less. The negative photosensitive resin composition according to any one of claims 1 to 4,
A negative photosensitive resin composition having a viscosity of 10 cP or more and 6000 cP or less at 25°C. The negative photosensitive resin composition according to any one of claims 1 to 5,
The thermosetting resin is a negative photosensitive resin composition containing a component that is solid at 25°C. The negative photosensitive resin composition according to any one of claims 1 to 6,
A negative photosensitive resin composition, wherein the thermosetting resin contains an epoxy resin. The negative photosensitive resin composition according to any one of claims 1 to 7,
A negative photosensitive resin composition containing a curing agent. The negative photosensitive resin composition according to any one of claims 1 to 8,
A negative photosensitive resin composition containing a thermoplastic resin. The negative photosensitive resin composition according to claim 9,
A negative photosensitive resin composition, wherein the thermoplastic resin contains a phenoxy resin. a semiconductor chip;
A resin film comprising a cured product of the negative photosensitive resin composition according to any one of claims 1 to 10, provided on the semiconductor chip;
A semiconductor device comprising: 12. The semiconductor device according to claim 11,
a rewiring layer embedded in the resin film,
A semiconductor device, wherein the rewiring layer is configured to be electrically connected to the semiconductor chip. An electronic device comprising the semiconductor device according to claim 11 .

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