JP7212753B2 - semiconductor light emitting device - Google Patents

Description

The present invention relates to a semiconductor light emitting device.

FIG. 27 shows an example of a conventional semiconductor light emitting device. The semiconductor light emitting device 9 shown in the figure has a lead 92 on a substrate 91 . An LED chip 93 is mounted on the lead 92 . LED chip 93 has a semiconductor layer 94 and a submount substrate 95 . Semiconductor layer 94 has, for example, an n-type semiconductor layer, a p-type semiconductor layer, and an active layer sandwiched therebetween. The submount substrate 95 supports the semiconductor layer 94 and is made of Si, for example. LED chip 93 is electrically connected to lead 92 by wire 96 . The sealing resin 97 covers the LED chip 93 and transmits light from the LED chip 93 .

When the LED chip 93 emits light, heat is mainly generated from the active layer. This heat is dissipated by being transferred to the leads 92 and the base material 91 . However, a submount substrate 95 is interposed between the active layer and the leads 92 . This submount substrate 95 prevents heat dissipation from the LED chip 93 . Therefore, there is a problem that the luminous efficiency of the LED chip 93 is lowered.

FIG. 28 shows another example of a conventional semiconductor light-emitting device (see Patent Document 2, for example). A semiconductor light emitting device 900 shown in the figure has an LED chip 902 mounted on a substrate 901 . The LED chip 902 is surrounded by a frame-shaped reflector 905 . A space surrounded by the reflector 905 is filled with a sealing resin 906 . The LED chip 902 has a submount substrate 903 made of Si, for example, and a semiconductor layer 904 stacked on the submount substrate 903 . The semiconductor layer 904 is electrically connected to the substrate 901 through the submount substrate 903 .

Light emitted laterally from the LED chip 902 is reflected upward by the reflector 905 . In order to emit more of the reflected light from the semiconductor light emitting device 900, it is effective to greatly tilt the inner wall surface of the reflector 905 from the angle perpendicular to the substrate 901. FIG. However, the more the inner wall surface is inclined, the larger the semiconductor light emitting device 900 becomes. There is a strong demand for miniaturization of the semiconductor light emitting device 900 due to space limitations of the electronic equipment in which it is mounted. Therefore, it is difficult to achieve both miniaturization and high brightness of the semiconductor light emitting device 900 .

JP-A-2006-245231 Japanese Patent Application Laid-Open No. 2004-119743

SUMMARY OF THE INVENTION The present invention has been conceived under the circumstances described above, and provides a semiconductor light-emitting device capable of efficiently forming a plurality of conductive portions by electroplating without causing a decrease in light-emitting efficiency. The task is to

According to a first aspect of the present invention, a plurality of LED chips and a case in which the plurality of LED chips are mounted are provided, and each of the LED chips includes a substrate and an n-type semiconductor layer laminated on the substrate. , an active layer, a p-type semiconductor layer, an anode electrode conducting to the p-type semiconductor layer, and a cathode electrode conducting to the n-type semiconductor layer, wherein the anode electrode and the cathode electrode face the case. The case comprises a substrate made of ceramic and having a front surface and a back surface, a surface layer including a plurality of anode pads and cathode pads formed on the surface, and a surface layer formed on the back surface. a back layer including an anode mounting electrode and a cathode mounting electrode; a plurality of anode through-wirings that electrically connect the plurality of anode pads and the anode mounting electrode and penetrate at least a portion of the substrate in the thickness direction; and wiring having a plurality of cathode through-wirings that electrically connect the plurality of cathode pads and the cathode mounting electrodes and that penetrate through at least a portion of the substrate in a thickness direction of the substrate. A light emitting device is provided.

Preferably in the practice of the present invention, the plurality of anode through wires includes a plurality of full-thickness anode through wires penetrating the substrate from the front surface to the back surface.

In carrying out the present invention, preferably, the wiring has an intermediate layer positioned between the front surface and the back surface in the thickness direction of the base material.

In the practice of the present invention, preferably, the plurality of cathode through wires include one or more front side cathode through wires penetrating the substrate from the front surface to the intermediate layer, and one or more cathode through wires penetrating the substrate from the intermediate layer to the back surface. and one or more backside cathode feedthroughs passing through the material.

In carrying out the present invention, preferably, the intermediate layer has a cathode relay wiring connected to the front-side cathode through-wiring and the back-side cathode through-wiring.

In carrying out the present invention, preferably, the surface layer has anode-plated wiring and cathode-plated wiring extending from one end of the base material to the other end of the base material when viewed in the thickness direction of the base material.

In the practice of the present invention, preferably, the plurality of anode through wires include anode through wires for plating that connect the anode plating wires and the anode mounting electrodes.

In carrying out the present invention, preferably, the plurality of cathode through wires include a cathode through wire for plating that connects the cathode plating wire and the cathode mounting electrode.

In the practice of the present invention, preferably, of the plurality of anode through-wires, those exposed to the surface are covered with the plurality of anode pads at the surface-side end faces thereof.

In the practice of the present invention, preferably, among the plurality of cathode through-wires, those exposed to the surface are covered with the plurality of cathode pads at the surface-side end faces thereof.

In the practice of the present invention, preferably, among the plurality of anode through-wirings, those exposed on the back surface are covered with the anode mounting electrode at the back-side end surface thereof.

In the practice of the present invention, preferably, among the plurality of cathode through-wirings, those exposed on the back surface are covered with the cathode mounting electrode at the back-side end surface thereof.

In carrying out the present invention, preferably, the plurality of anode through-wirings and the plurality of cathode through-wirings are made of Ag.

Preferably in the practice of the present invention, each of said plurality of anode pads and cathode pads is made of Au.

Preferably, in the practice of the present invention, said anode mounted electrode and said cathode mounted electrode are made of Au.

In carrying out the present invention, preferably, the wiring has a bypass cathode pad and a bypass anode pad formed on the surface, and the plurality of anode through wirings connect the bypass cathode pad and the anode mounting electrode. A bypass cathode through-wiring for electrical connection is included, and the plurality of cathode through-wires includes a bypass anode through-wiring for electrical connection between the bypass anode pad and the cathode mounting electrode.

Preferably, in the practice of the present invention, a Zener diode is conductively connected to the bypass cathode pad, and a wire is provided to electrically connect the bypass anode pad and the Zener diode.

In the practice of the present invention, preferably, the case is formed with recessed portions for accommodating the plurality of LED chips in the thickness direction thereof.

In the implementation of the present invention, preferably, the accommodation recess is filled with a sealing resin that covers the plurality of LED chips.

In carrying out the present invention, preferably, the sealing resin is mixed with a fluorescent material that emits light of a wavelength different from that of the light from the LED chip when excited by the light from the LED chip.

In carrying out the present invention, preferably, the case has a substantially rectangular shape in the thickness direction, and four corner recesses having a cross-sectional shape in the thickness direction of a quarter circle are formed at the four corners of the case.

In the practice of the present invention, preferably, at least one of the plurality of anode through wirings and the plurality of cathode through wirings is formed with a first concave portion, and the surface layer has, when viewed in the thickness direction of the base material, , a second recess overlapping the first recess is formed, further comprising a filling portion filled in the second recess, wherein the filling portion is any one of the plurality of LED chips when viewed in the thickness direction of the base material overlap one.

In the practice of the present invention, preferably, a joint portion interposed between any one of the plurality of LED chips and the surface layer is further provided, and the filling portion is interposed between the joint portion and the surface layer. and is in contact with both the junction and the surface layer.

Preferably, in carrying out the present invention, the filling portion is made of a conductive material.

In carrying out the present invention, preferably, the filling portion is made of an alloy of Au and Sn.

Preferably, in carrying out the present invention, the joint is made of a conductive material.

Preferably, in carrying out the present invention, the joint portion is made of an alloy of Au and Sn.

According to a second aspect of the present invention, there is provided a semiconductor light-emitting device comprising one or more LED chips, a case having a front surface on which the LED chips are mounted, and a back surface located on the opposite side of the front surface. , the case includes a base material having an inner wall surface surrounding the LED chip, an inner edge positioned on the LED chip side, an outer edge in contact with the inner wall surface, connecting the inner edge and the outer edge, and from the inner edge A semiconductor light-emitting device is provided, comprising a reflective resin having a reflective surface that is inclined away from the surface toward the outer edge.

In carrying out the present invention, preferably, the reflective resin has a higher reflectance than the substrate.

Preferably in the practice of the invention, the reflective resin is white.

Preferably, in carrying out the present invention, the substrate is made of ceramic.

In the practice of the present invention, preferably, the case includes a lead that conducts to the LED chip and is at least partially covered with the base material, and the base material is a thermosetting resin or heat Contains plastic resin.

Preferably in the practice of the present invention, the height from the surface to the outer edge is higher than the height from the surface to the active layer of the LED chip.

Preferably in the practice of the present invention said inner wall surface is perpendicular to said surface.

In the implementation of the present invention, preferably, a bypass function element is provided to prevent excessive reverse voltage from being applied to the LED chip, and the reflective resin covers the bypass function element.

In carrying out the present invention, preferably, the reflective resin covers a wire connected to the bypass function element.

In carrying out the present invention, preferably, the base material is recessed from the front surface to the back surface side, is spaced apart from the LED chip, and has a damming recess that accommodates the bypass function element.

Preferably in the practice of the invention, the inner edge coincides with the edge of the damming recess.

In carrying out the present invention, preferably, the damming recess accommodates a pad to which a wire connected to the bypass function element is bonded.

Preferably in the practice of the present invention, the damming recess has an enclosing portion surrounding the LED chip.

In the implementation of the present invention, preferably, a plurality of the LED chips are provided, and the reflective resin has a protruding portion extending from the enclosing portion to between the LED chips adjacent to each other.

In the implementation of the present invention, preferably, the LED chip is located closer to the center of the case than the portion that is inserted between the adjacent LED chips.

Preferably in the practice of the present invention, said LED chip is a flip-chip type having anode and cathode electrodes facing said surface.

Preferably in the practice of the present invention, the inner edge of the reflective resin is spaced apart from the LED chip.

Preferably, in the practice of the present invention, the LED chip is of a two-wire type having an anode electrode and a cathode electrode located opposite the surface and having wires connected thereto, respectively.

Preferably in the practice of the present invention, the inner edge of the reflective resin is spaced apart from the LED chip.

In the practice of the present invention, preferably, the case includes an anode pad and a cathode pad to which wires connected to the LED chip are bonded, and the anode pad and the cathode pad are arranged outside the LED chip. It is

Preferably, in the practice of the present invention, the reflective resin covers the anode pad and the cathode pad.

In the practice of the present invention, the LED chip preferably has an n-type semiconductor layer, an active layer, a p-type semiconductor layer laminated to each other, and a submount substrate supporting them.

In carrying out the present invention, preferably, the reflective resin covers all of the surface surrounded by the inner wall surface except for the portion where the submount substrate is bonded.

In the practice of the present invention, preferably, a transparent resin that covers the LED chip and the reflective resin and allows the light from the LED chip to pass therethrough is coated with fluorescent light that emits light of different wavelengths when excited by the light from the LED chip. A sealing resin made of a mixed material is provided.

In carrying out the present invention, preferably, the case includes a surface layer, a back layer, a plurality of anode through wirings, and a plurality of cathode through wirings, and the surface layer comprises a plurality of each of an anode pad and a cathode pad, the back layer including an anode mounting electrode and a cathode mounting electrode formed on the back surface of the base material, and the plurality of anode through-wirings forming the plurality of anode pads and the anode mounting electrode; and penetrate through at least a portion of the substrate in the thickness direction, and the plurality of cathode through-wirings electrically connect the plurality of cathode pads and the cathode mounting electrodes, and the substrate passes through at least part of the thickness of the

In the practice of the present invention, preferably, at least one of the plurality of anode through wirings and the plurality of cathode through wirings is formed with a first concave portion, and the surface layer has, when viewed in the thickness direction of the base material, , a second recess overlapping the first recess is formed, further comprising a filling portion filled in the second recess, wherein the filling portion is any one of the plurality of LED chips when viewed in the thickness direction of the base material overlap one.

In the practice of the present invention, preferably, a joint portion interposed between any one of the plurality of LED chips and the surface layer is further provided, and the filling portion is interposed between the joint portion and the surface layer. and is in contact with both the junction and the surface layer.

Preferably, in carrying out the present invention, the filling portion is made of a conductive material.

In carrying out the present invention, preferably, the filling portion is made of an alloy of Au and Sn.

Preferably, in carrying out the present invention, the joint is made of a conductive material.

Preferably, in carrying out the present invention, the joint portion is made of an alloy of Au and Sn.

Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS It is a principal part top view which shows an example of the semiconductor light-emitting device of 1st Embodiment of this invention. FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1; 2 is an enlarged cross-sectional view of a main part showing an example of an LED chip used in the semiconductor light emitting device of FIG. 1; FIG. FIG. 3 is a plan view of a main part when it is assumed that the semiconductor light emitting device of FIG. 1 is cut along a plane along line IV-IV of FIG. 2; FIG. 3 is a plan view of a main part when it is assumed that the semiconductor light emitting device of FIG. 1 is cut along a plane along line VV of FIG. 2; 2 is a bottom view showing the semiconductor light emitting device of FIG. 1; FIG. It is a principal part top view which shows an example of the semiconductor light-emitting device of 2nd Embodiment of this invention. FIG. 8 is a cross-sectional view along line VIII-VIII of FIG. 7; 9 is a partially enlarged cross-sectional view showing an enlarged part of the semiconductor light emitting device shown in FIG. 8; FIG. FIG. 11 is a partially enlarged cross-sectional view of a semiconductor light emitting device according to a modification of the second embodiment of the invention; It is a principal part top view which shows the semiconductor light-emitting device based on 3rd Embodiment of this invention. 12 is a bottom view showing the semiconductor light emitting device of FIG. 11; FIG. FIG. 12 is a cross-sectional view along line XIII-XIII of FIG. 11; 12 is a cross-sectional view showing an LED chip used in the semiconductor light emitting device of FIG. 11; FIG. It is a principal part top view which shows the semiconductor light-emitting device based on 4th Embodiment of this invention. FIG. 16 is a cross-sectional view along line XVI-XVI of FIG. 15; It is a principal part top view which shows the semiconductor light-emitting device based on 5th Embodiment of this invention. FIG. 18 is a cross-sectional view along line XVIII-XVIII in FIG. 17; 18 is a cross-sectional view showing an LED chip used in the semiconductor light emitting device of FIG. 17; FIG. It is a principal part top view which shows the semiconductor light-emitting device based on 6th Embodiment of this invention. 21 is a cross-sectional view along line XXI-XXI of FIG. 20; FIG. 21 is a cross-sectional view showing an LED chip used in the semiconductor light emitting device of FIG. 20; FIG. It is a principal part top view which shows an example of the semiconductor light-emitting device of 7th Embodiment of this invention. FIG. 24 is a cross-sectional view along line XXIV-XXIV of FIG. 23; 25 is a partially enlarged cross-sectional view showing an enlarged part of the semiconductor light emitting device shown in FIG. 24; FIG. FIG. 21 is a partially enlarged cross-sectional view of a semiconductor light emitting device according to a modification of the seventh embodiment of the invention; FIG. 2 is a cross-sectional view of a main part showing an example of a conventional semiconductor light emitting device; 1 is a cross-sectional view showing an example of a conventional semiconductor light emitting device; FIG.

Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.

1 to 6 show an example of a semiconductor light emitting device according to a first embodiment of the invention and an example of an LED chip used therein. A semiconductor light emitting device A1 of this embodiment includes a case 2, a plurality of LED chips 5, a Zener diode 6, and a sealing resin 7. As shown in FIG. In addition, in FIG. 1, the sealing resin 7 is omitted for convenience of understanding.

The case 2 serves as a base for the semiconductor light emitting device A1, and has a base material 3 and wiring 4. As shown in FIG. The size of the case 2 is about 5 to 10 mm square in plan view and about 1.0 mm in thickness.

The base material 3 is in the shape of a thick plate that is substantially rectangular in plan view, and is made of ceramic such as alumina. In this embodiment, a material called a low-temperature co-fired ceramic, which has a relatively low firing temperature of about 900° C., is used as the ceramic. This low-temperature co-fired ceramic can be fired at the same time as the metal that is the material of the wiring 4 at a low firing temperature. A housing recess 33 is formed in the center of the base material 3 . The accommodation recess 33 accommodates a plurality of LED chips 5 and has a circular shape in plan view. Corner recesses 34 are formed at the four corners of the base material 3 . The corner concave portion 34 is a part of a through-hole provided for appropriately dividing the ceramic material in the manufacturing method of the semiconductor light-emitting device A1, and is a groove having a quarter-circular cross section. The base material 3 has a front surface 31 and a back surface 32 . In this embodiment, the depth of the housing recess 33 is set to, for example, about 0.6 mm.

The wiring 4 is used as a path for supplying DC power to the plurality of LED chips 5, and includes a surface layer 41, an intermediate layer 42, a back layer 43, a plurality of anode through wirings 44, and a plurality of cathodes. It has a through wire 45 .

FIG. 4 is a plan view of the main part when it is assumed that the semiconductor light emitting device A1 is cut along the plane IV-IV in FIG. In the present invention, for the sake of convenience, of the wiring 4, the portion formed on the circular surface 31 surrounded by the accommodation recess 33 and the surface existing at the same level as the surface 31 in the thickness direction of the base material 3 are referred to as the surface. It is called layer 41 .

The surface layer 41 includes a plurality of anode pads 41a, a plurality of cathode pads 41b, bypass cathode pads 41c, bypass anode pads 41d, anode plating wiring 41e, and cathode plating wiring 41f. In this embodiment, portions of the surface layer 41 other than the anode plated wiring 41e and the cathode plated wiring 41f are made of Au, and the anode plated wiring 41e and the cathode plated wiring 41f are made of an appropriately selected metal including Au.

A plurality of anode pads 41a and a plurality of cathode pads 41b are for mounting LED chips 5 thereon. As best shown in FIG. 4, the anode pads 41a and cathode pads 41b are arranged as adjacent pairs. In this embodiment, five pairs of anode pads 41a and cathode pads 41b are formed. Each anode pad 41a has three parallel branch-shaped portions, a belt-shaped portion connecting perpendicularly to these branch-shaped portions, and a circular portion connected to this belt-shaped portion. The cathode pad 41b has a strip-shaped portion and a circular portion connected to the strip-shaped portion.

The bypass cathode pad 41c and the bypass anode pad 41d are for mounting a bypass function element for avoiding application of an excessive reverse voltage to the LED chip 5. In this embodiment, the bypass function element Zener diode 6 is mounted as. The bypass cathode pad 41c has a circular shape, and the bypass anode pad 41d has a rectangular portion and a circular portion connected to the rectangular portion.

The anode plating wiring 41e and the cathode plating wiring 41f are used to form the plurality of anode pads 41a, the plurality of cathode pads 41b, the bypass cathode pads 41c, the bypass anode pads 41d, and the back layer 43 by plating. The anode plated wiring 41e and the cathode plated wiring 41f extend substantially parallel to each other from the upper end to the lower end of the substrate 3 in FIG.

The intermediate layer 42 is formed substantially in the center (approximately 0.2 mm deep from the surface 31) between the front surface 31 and the back surface 32 in the thickness direction of the base material 3. As shown in FIG. FIG. 5 is a plan view of a main part when it is assumed that the semiconductor light emitting device A1 is cut along a plane along line VV in FIG. As shown in this figure, the intermediate layer 42 includes a cathode relay wiring 42a. The cathode relay wiring 42a has a substantially pentagonal portion, a belt-like portion connected to the pentagonal portion, and a belt-like portion connecting perpendicularly to the belt-like portion.

As shown in FIG. 6, the back layer 43 is formed on the back surface 32 of the substrate 3 and has an anode mounting electrode 43a and a cathode mounting electrode 43b. The anode mounting electrode 43a and the cathode mounting electrode 43b are used for surface-mounting the semiconductor light emitting device A1 on, for example, a circuit board. In this embodiment, the anode mounted electrode 43a and the cathode mounted electrode 43b are made of Au. The anode mounting electrode 43a has a substantially rectangular shape, and covers about two-thirds of the area on the right side of the back surface 32 of the substrate 3 in FIG. The cathode mounting electrode 43b has a long rectangular shape and covers an area of about one fourth of the left side of the back surface 32 .

The multiple anode through wires 44 include multiple full-thickness anode through wires 44a, multiple anode through wires 44b for plating, and bypass cathode through wires 44c. Each of the plurality of anode through wires 44 is made of Ag, Ta, or solder, and is made of Ag in this embodiment. As shown in FIG. 2, the full-thickness anode penetration wiring 44a penetrates the base material 3 from the surface 31 to the back surface 32 in the thickness direction. As understood from FIGS. 4 and 6, the plurality of full-thickness anode through wires 44a overlap both the plurality of anode pads 41a and the anode mounting electrodes 43a when viewed in the thickness direction of the base material 3 . That is, each full-thickness anode through wire 44a is covered with the circular portion of the anode pad 41a on the front surface 31 side, and is covered with the anode mounting electrode 43a on the back surface 32 side.

The plurality of plating anode through-wirings 44b pass through the base material 3 in the same region as the full-thickness anode through-wirings 44a in the thickness direction. As can be seen from FIGS. 4 and 6, the plurality of anode through wirings 44b for plating overlap both the anode plating wirings 41e and the anode mounting electrodes 43a when viewed in the thickness direction of the substrate 3. FIG. That is, each anode through wiring 44b for plating has an end face on the front surface 31 side covered with the anode plating wiring 41e, and an end face on the back surface 32 side with the anode mounting electrode 43a.

The bypass cathode through-wiring 44c penetrates the base material 3 from the surface 31 to the back surface 32 in the thickness direction in the same manner as the full-thickness anode through-wiring 44a. As can be seen from FIGS. 4 and 6, the bypass cathode through wire 44c overlaps both the bypass cathode pad 41c and the anode mounting electrode 43a when viewed in the thickness direction of the base material 3. As shown in FIG. That is, the bypass cathode through wire 44c is covered with the bypass cathode pad 41c on the front surface 31 side, and covered with the anode mounting electrode 43a on the back surface 32 side.

The plurality of cathode through-wires 45 includes a plurality of front-side cathode through-wires 45a, a plurality of back-side cathode through-wires 45b, a plurality of cathode through-wires 45c for plating, and a bypass anode through-wire 45d. consists of Ag. As shown in FIG. 2, the surface-side cathode through-wiring 45a penetrates a portion of the substrate 3 from the surface 31 to the intermediate layer 42 in the thickness direction. As can be seen from FIGS. 4 and 5, the plurality of surface-side cathode through-wires 45a overlap the plurality of cathode pads 41b and the cathode relay wires 42a when viewed in the thickness direction of the base material 3. FIG. That is, the end faces of the plurality of surface-side cathode through-wires 45a on the side of the surface 31 are covered with the plurality of cathode pads 41b, and the end faces on the side of the intermediate layer 42 are covered by the cathode relay wires 42a.

The plurality of back-side cathode through-wires 45b penetrate through a portion of the base material 3 from the intermediate layer 42 to the back surface 32 in the thickness direction. As can be seen from FIGS. 5 and 6, the plurality of back-side cathode through-wires 45b overlap the cathode relay wires 42a and the cathode mounting electrodes 43b when viewed in the thickness direction of the substrate 3 . That is, the end faces of the plurality of back-side cathode through wires 45b on the intermediate layer 42 side are covered with the cathode relay wires 42a, and the end faces on the back face 32 side are covered with the cathode mounting electrodes 43b. Through the cathode relay wiring 42 a of the intermediate layer 42 , the plurality of front side cathode through wirings 45 a and the plurality of back side cathode through wirings 45 b are electrically connected to each other.

The plurality of cathode through-wirings 45c for plating pass through the substrate 3 in the thickness direction in the same region as the full-thickness anode through-wirings 44a. 4 and 6, the plurality of cathode through wirings 45c for plating overlap both the cathode plating wirings 41f and the cathode mounting electrodes 43b when viewed in the thickness direction of the substrate 3. As shown in FIG. That is, each cathode through wiring 45c for plating is covered with a cathode plating wiring 41f on the front surface 31 side, and covered with a cathode mounting electrode 43b on the back surface 32 side.

The bypass anode through-wiring 45d penetrates the substrate 3 from the surface 31 to the intermediate layer 42 in the same manner as the front-side cathode through-wiring 45a. As understood from FIGS. 4 and 5, the bypass anode through wire 45d overlaps both the bypass anode pad 41d and the cathode relay wire 42a when viewed in the thickness direction of the base material 3. FIG. That is, the bypass anode through wire 45d has an end face on the surface 31 side covered with the bypass anode pad 41d and an end face on the intermediate layer 42 side with the cathode relay wire 42a.

Each of the plurality of LED chips 5 serving as the light source of the semiconductor light emitting device A1 is configured as follows. First, an n-type semiconductor layer 5b made of, for example, a GaN-based semiconductor is laminated on a substrate 5a made of, for example, sapphire. Furthermore, an active layer 5c is laminated on the n-type semiconductor layer 5b. The active layer 5c has a multi-quantum well structure in which a plurality of layers made of, for example, a GaN-based semiconductor are laminated. The p-type semiconductor layer 5d is stacked on the active layer 5c and is made of, for example, a GaN-based semiconductor. Anode electrode 5e is laminated on p-type semiconductor layer 5d and is made of a metal such as Al, Au, or Ag. Cathode electrode 5f is laminated on n-type semiconductor layer 5b exposed by removing p-type semiconductor layer 5d and active layer 5c by etching, and is made of metal such as Al, Au, Ag, or the like.

Each LED chip 5 is mounted on the anode pad 41a and the cathode pad 41b in a so-called flip-chip mounting form in which each LED chip 5 is turned upside down after being manufactured. Specifically, the anode electrode 5e is connected to the anode pad 41a through the joint 51, and the cathode electrode 5f is connected through the joint 51 to the cathode pad 41b. Blue light, for example, is emitted from the LED chip 5 having such a configuration.

The Zener diode 6 is a functional element for avoiding application of excessive reverse voltage to the LED chip 5, and is die-bonded to the bypass cathode pad 41c in this embodiment. Conducting. A wire 61 connects the Zener diode 6 and the bypass anode pad 41d. Instead of the Zener diode 6, a varistor element or an ESD (Electro Static Discharge) protection element may be used as a functional element for avoiding reverse voltage application.

The sealing resin 7 fills the housing recesses 33 of the case 2 and covers the plurality of LED chips 5 . The sealing resin 7 is made of transparent epoxy resin or silicone resin mixed with fluorescent material. This fluorescent material emits, for example, yellow light when excited by the blue light from the LED chip 5 . By mixing the yellow light and the blue light, white light is emitted from the semiconductor light emitting device A1.

Next, the operation of the semiconductor light emitting device A1 will be described.

According to this embodiment, the substrate 5a is not interposed between the active layer 5c and the case 2, as shown in FIGS. The p-type semiconductor layer 5d is much thinner than the substrate 5a, and the anode electrode 5e is made of metal with high thermal conductivity. Therefore, heat generated when the LED chip 5 is lit is easily transmitted to the case 2 . Therefore, heat dissipation from the LED chip 5 can be promoted, and the luminous efficiency of the LED chip 5 can be enhanced.

The anode pad 41a is connected to the anode mounting electrode 43a via a full-thickness anode penetration wiring 44a. Therefore, the heat from the LED chip 5 is transmitted through the full-thickness anode penetration wiring 44a to the anode mounting electrode 43a and further to, for example, the circuit board on which the semiconductor light emitting device A1 is mounted. This is suitable for promoting heat dissipation of the LED chip 5 and increasing the luminous efficiency of the LED chip 5 .

Also, the cathode pad 41b is connected to the cathode mounting electrode 43b via the front side cathode through wiring 45a, the cathode relay wiring 42a, and the back side cathode through wiring 45b. Therefore, the heat from the LED chip 5 is transferred to the cathode mounting electrode 43b through the front side cathode through wiring 45a, the cathode relay wiring 42a, and the back side cathode through wiring 45b, and further to the circuit board on which the semiconductor light emitting device A1 is mounted, for example. It is said. This is suitable for promoting heat dissipation of the LED chip 5 and increasing the luminous efficiency of the LED chip 5 .

The plurality of anode through-wirings 44 and the plurality of cathode through-wirings 45 are made of Ag. This is advantageous in promoting heat dissipation from the LED chip 5 . In addition, the end surfaces on the front surface 31 side and the rear surface 32 side of the plurality of anode through wirings 44 and the plurality of cathode through wirings 45 are covered with the surface layer 41 and the rear surface layer 43 . Of the surface layer 41 and the back layer 43, at least the portions covering these end surfaces are made of Au. As a result, it is possible to appropriately protect the plurality of anode through-wirings 44 and the plurality of cathode through-wirings 45 made of Ag, which is relatively susceptible to deterioration.

The base material 3 is made of ceramic such as alumina, and has a coefficient of thermal expansion that is relatively close to that of the material of the LED chip 5, such as a GaN-based semiconductor. Therefore, a difference in thermal expansion is less likely to occur between the LED chip 5 and the case 2 when the LED chip 5 is mounted on the case 2 or when the LED chip 5 emits light. This can prevent the LED chip 5 from peeling off from the case 2 .

The bypass cathode pad 41c is connected to the anode mounting electrode 43a via a bypass cathode through wire 44c. This is suitable for smoothly passing a temporary large current in order to avoid applying an excessive reverse voltage to the LED chip 5 .

A second embodiment of the present invention will be described with reference to FIGS. 7 to 9. FIG.

The semiconductor light-emitting device A2 shown in the same figure is mainly different in configuration from the semiconductor light-emitting device A1 in that it includes the filling portion 8 of FIG. Specifically, it is as follows.

Although omitted in the description of the semiconductor light emitting device A1, in practice, there are many cases where the anode through wiring 44 and the cathode through wiring 45 are formed with recesses that are recessed toward the rear surface 32 side of the substrate 3 . Such recesses are formed when the substrate 3 is fired. FIG. 9 shows a concave portion 44h formed in the full-thickness anode through wire 44a of the anode through wire 44. As shown in FIG. In this embodiment, as shown in FIGS. 7 and 8, a plurality of LED chips 5 are arranged at positions overlapping the full-thickness anode penetration wiring 44a.

In this embodiment, three full-thickness anode through-wires 44a are formed at positions overlapping one LED chip 5, but the number of full-thickness anode through-wires 44a overlapping one LED chip 5 is three. , but may be one, two, or four or more. If the number of full-thickness anode penetration wirings 44a is large, the heat from the LED chip 5 can be more efficiently transferred to the anode mounting electrodes 43a. This is preferable from the viewpoint of improving the heat dissipation of the semiconductor light emitting device A2. In addition, the large number of full-thickness anode penetration wires 44a is suitable for reducing the electrical resistance between the surface layer 41 (anode pad 41a) and the anode mounting electrode 43a.

The surface defining the recess 44 h is covered with the surface layer 41 . The surface layer 41 has a substantially uniform thickness throughout. Therefore, the surface layer 41 is also formed with recesses 41h. A concave portion 41 h shown in FIG. 9 is formed in the anode pad 41 a of the surface layer 41 . The recess 41 h is recessed toward the rear surface 32 of the base material 3 . The concave portion 41 h overlaps the concave portion 44 h when viewed in the thickness direction of the base material 3 . Therefore, in FIG. 9, the recess 41h is located directly above the recess 44h. Although not shown, the surface layer 41 in this embodiment has a structure in which a layer made of Ni and a layer made of Au are laminated. The layer made of Ni is interposed between the layer made of Au and the substrate 3 .

The filling portion 8 fills the recess 41h. Filling portion 8 is in contact with surface layer 41 and joint portion 51 . The filling portion 8 may be made of a conductive material, or may be made of an insulating material. In this embodiment, the filling portion 8 is made of a conductive material. An example of a conductive material forming filling portion 8 is an alloy of Au and Sn. The filling portion 8 is formed before arranging the LED chip 5 on the surface layer 41 . The filling portion 8 is formed, for example, by applying paste to the recess 41h.

Also in this embodiment, the joint portion 51 is interposed between any one of the plurality of LED chips 5 and the surface layer 41 . The bonding portion 51 is for bonding each LED chip 5 to the surface layer 41 . The joint portion 51 may be made of a conductive material, or may be made of an insulating material. In this embodiment, the joint 51 is made of a conductive material. An example of a conductive material forming the joint portion 51 is an alloy of Au and Sn. Unlike the present embodiment, the conductive material forming the joint 51 may be silver paste or solder.

According to the semiconductor light emitting device A2, by forming the filling portion 8 in the concave portion 41h before arranging the LED chip 5 on the base material 3, the surface of the portion where the LED chip 5 is to be arranged can be made flatter. can. Therefore, even if the LED chip 5 is arranged at a position overlapping the full-thickness anode through-wiring 44a when viewed in the thickness direction of the base material 3, the LED chip 5 does not fit into the concave portion 41h. It is possible to prevent the posture of the LED chip 5 from collapsing. Therefore, it is possible to improve the manufacturing yield of the semiconductor light emitting device A2.

Note that FIG. 9 shows an example in which the recess 44 h is formed in the anode through wire 44 and the recess 41 h is formed in the anode pad 41 a of the surface layer 41 . Unlike that shown in FIG. 9, as shown in FIG. 10, a recess 45h is formed in the cathode through wire 45, and a recess 41h is formed at a position that overlaps with this recess 45h when viewed in the thickness direction of the substrate 3. It is also possible that In this case, the filling portion 8 may be formed in the concave portion 41h, and the LED chip may be arranged at a position where the through-cathode wiring 45 and the substrate 3 overlap when viewed in the thickness direction.

11 to 13 show a semiconductor light emitting device according to a third embodiment of the invention. A semiconductor light emitting device 101 of this embodiment includes a case 200 , a plurality of LED chips 500 , a Zener diode 600 , a reflective resin 710 and a sealing resin 700 . 11, the sealing resin 700 is omitted for convenience of understanding.

The case 200 serves as the base of the semiconductor light emitting device 101 and has a base material 300 and wiring 400 . The size of the case 200 is about 5 to 10 mm square in plan view and about 1.0 mm in thickness.

The base material 300 is in the shape of a thick plate that is substantially rectangular in plan view, and is made of ceramic such as alumina. In this embodiment, a material called a low-temperature co-fired ceramic, which has a relatively low firing temperature of about 900° C., is used as the ceramic. This low-temperature co-fired ceramic can be fired simultaneously with the metal that is the material of the wiring 400 at a low firing temperature.

A housing recess 303 is formed in the center of the base material 300 . The accommodation recess 303 accommodates a plurality of LED chips 500 and has a rectangular shape in plan view. Corner recesses 304 are formed at the four corners of the base material 300 . The corner concave portion 304 is a part of a through hole provided for appropriately dividing the ceramic material in the manufacturing method of the semiconductor light emitting device 101, and is a groove with a cross section of a quarter circle shape. Base material 300 has a front surface 301 and a back surface 302 . An inner wall surface 305 of the receiving recess 303 is annular and perpendicular to the surface 301 . In this embodiment, the depth of the housing recess 303 is set to, for example, about 0.6 mm.

The substrate 300 has a dam recess 306 . Damping recess 306 is recessed from surface 301 and contacts inner wall surface 305 . In this embodiment, the damming recess 306 is rectangular.

The wiring 400 is used as a path for supplying DC power to the plurality of LED chips 500, and includes a surface layer 410, an intermediate layer 420, a back layer 430, a plurality of anode through wirings 440, and a plurality of cathodes. It has a through wire 450 .

Surface layer 410 includes a plurality of anode pads 411 , a plurality of cathode pads 412 , bypass cathode pads 413 and bypass anode pads 414 . The surface layer 410 is made of Au, for example.

A plurality of anode pads 411 and a plurality of cathode pads 412 are for mounting LED chips 500 . Anode pads 411 and cathode pads 412 are arranged as adjacent pairs. In this embodiment, five sets of anode pads 411 and cathode pads 412 are formed. Each anode pad 411 has three parallel branch-shaped portions, a band-shaped portion connecting perpendicularly to these branch-shaped portions, and a circular portion connected to this band-shaped portion. Cathode pad 412 has a strip-shaped portion and a circular portion connected to the strip-shaped portion.

The bypass cathode pad 413 and the bypass anode pad 414 are for mounting a bypass function element for avoiding application of an excessive reverse voltage to the LED chip 500. In this embodiment, the bypass function element A Zener diode 600 is implemented as a The bypass cathode pad 413 has a circular shape, and the bypass anode pad 414 has a rectangular portion and a circular portion connected to the rectangular portion.

Intermediate layer 420 is formed approximately in the center (approximately 0.2 mm deep from surface 301 ) between front surface 301 and back surface 302 in the thickness direction of base material 300 . The intermediate layer 420 includes cathode relay wiring 421 .

As shown in FIG. 12 , the back layer 430 is formed on the back surface 302 of the base material 300 and has an anode mounting electrode 431 and a cathode mounting electrode 432 . Anode mounting electrode 431 and cathode mounting electrode 432 are used for surface mounting semiconductor light emitting device 101 on, for example, a circuit board. In this embodiment, the anode mounted electrode 431 and the cathode mounted electrode 432 are made of Au. The anode mounting electrode 431 has a substantially rectangular shape and covers an area of about two-thirds of the right side of the rear surface 302 of the base material 300 in the drawing. The cathode mounting electrode 432 has an elongated rectangular shape and covers the area of about the left quarter of the rear surface 302 in the figure.

The plurality of anode through wires 440 includes a plurality of full thickness anode through wires 441 and bypass cathode through wires 443 . Each of the plurality of anode through wires 440 is made of Ag, Ta, or solder, and is made of Ag in this embodiment. As shown in FIG. 13, the full-thickness anode through-wiring 441 penetrates the base material 300 from the surface 301 to the back surface 302 in the thickness direction. Each full-thickness anode through wire 441 is covered with the circular portion of the anode pad 411 at its front surface 301 side end surface, and is covered with the anode mounting electrode 431 at its rear surface 302 side end surface.

The bypass cathode through wire 443 penetrates the substrate 300 from the front surface 301 to the back surface 302 in the thickness direction in the same manner as the full-thickness anode through wire 441 . The bypass cathode through wire 443 is covered with the bypass cathode pad 413 on the front surface 301 side, and covered with the anode mounting electrode 431 on the back surface 302 side.

The plurality of cathode through-wirings 450 includes a plurality of front-side cathode through-wirings 451, a plurality of back-side cathode through-wirings (not shown), and bypass anode through-wirings (not shown). Become. The surface-side cathode through-wiring 451 penetrates through a portion of the base material 300 from the surface 301 to the intermediate layer 420 in the thickness direction. The surface-side cathode through-wiring 451 has an end surface on the surface 301 side covered with a plurality of cathode pads 412 , and an end surface on the intermediate layer 420 side with a cathode relay wiring 421 . The back-side cathode through-wiring penetrates through a portion of the base material 300 from the intermediate layer 420 to the back surface 302 in the thickness direction. The rear surface side cathode through wiring has an end surface on the intermediate layer 420 side covered with a cathode relay wiring 421 and an end surface on the rear surface 302 side with a cathode mounting electrode 432 . Through the cathode relay wiring 421 of the intermediate layer 420, the plurality of front side cathode through wirings 451 and the plurality of back side cathode through wirings are electrically connected to each other. The bypass anode through-wiring passes through the substrate 300 from the surface 301 to the intermediate layer 420 in the same manner as the front-side cathode through-wiring 451 . The bypass anode through wire has an end face on the surface 301 side covered with a bypass anode pad 414 , and an end face on the intermediate layer 420 side with a cathode relay wire 421 .

Two test electrodes 460 are formed on the top surface of the substrate 300 . These test electrodes 460 are in communication with the plurality of anode pads 411 and the plurality of cathode pads 412 . In the manufacturing process of the semiconductor light emitting device 101 , a lighting test of the LED chip 500 can be performed by bringing test power probes into contact with the two test electrodes 460 .

Each of the plurality of LED chips 500 serving as the light source of the semiconductor light emitting device 101 is configured as follows. First, as shown in FIG. 14, an n-type semiconductor layer 502 made of, for example, a GaN-based semiconductor is laminated on a substrate 501 made of, for example, sapphire. Furthermore, an active layer 503 is laminated on the n-type semiconductor layer 502 . The active layer 503 has a multiple quantum well structure in which a plurality of layers made of, for example, a GaN-based semiconductor are laminated. A p-type semiconductor layer 504 is stacked on the active layer 503 and is made of, for example, a GaN-based semiconductor. Anode electrode 505 is laminated on p-type semiconductor layer 504 and is made of metal such as Al, Au, Ag, or the like. Cathode electrode 506 is laminated on n-type semiconductor layer 502 exposed by removing p-type semiconductor layer 504 and active layer 503 by etching, and is made of metal such as Al, Au, Ag, or the like.

Each LED chip 500 is mounted on the anode pad 411 and the cathode pad 412 in a so-called flip-chip mounting form in which each LED chip 500 is turned upside down after being manufactured. Specifically, anode electrode 505 is connected to anode pad 411 via joint 510 , and cathode electrode 506 is connected to cathode pad 412 via joint 510 . Blue light, for example, is emitted from the LED chip 500 having such a configuration.

The Zener diode 600 is a bypass function element for avoiding application of excessive reverse voltage to the LED chip 500, and is die-bonded to the bypass cathode pad 413 in this embodiment. is conducted to Zener diode 600 and bypass anode pad 414 are also connected by wire 610 . Zener diode 600 , bypass cathode pad 413 , and bypass anode pad 414 are formed within dam recess 306 . Instead of the Zener diode 600, a varistor element or an ESD (Electro Static Discharge) protection element may be used as a bypass function element for avoiding reverse voltage application.

Reflective resin 710 is made of, for example, silicone resin mixed with titanium oxide, and presents a bright white color. As shown in FIGS. 11 and 13, the reflective resin 710 has an inner edge 712 , an outer edge 713 and a reflective surface 711 . The inner edge 712 surrounds the plurality of LED chips 500 at a spaced apart location. The outer edge 713 is in contact with the inner wall surface 305 . The reflecting surface 711 is a surface that connects the inner edge 712 and the outer edge 713 , and is an inclined surface whose height from the surface 301 increases from the inner edge 712 toward the outer edge 713 . Inner edge 712 abuts surface 301 . Also, the height a from the surface 301 to the outer edge 713 is higher than the height b from the surface 301 to the active layer 503 of the LED chip 500 . Reflective resin 710 covers Zener diode 600 , bypass cathode pad 413 , bypass anode pad 414 and wire 610 . A portion of the inner edge 712 coincides with a portion of the edge of the dam recess 306 . Reflective resin 710 can be formed, for example, by attaching a resin material having moderate viscosity to surface 301 and damming recess 306 . The shape of the reflecting resin 710 described above is realized by the flow and surface tension of this resin material.

The sealing resin 700 fills the accommodation recess 303 of the case 200 and covers the plurality of LED chips 500 and the reflective resin 710 . The encapsulating resin 700 is made of transparent epoxy resin or silicone resin mixed with fluorescent material. This fluorescent material emits, for example, yellow light when excited by the blue light from the LED chip 500 . White light is emitted from the semiconductor light emitting device 101 by mixing the yellow light and the blue light.

Next, operation of the semiconductor light emitting device 101 will be described.

According to this embodiment, a reflective surface 711 exists between the LED chip 500 and the inner wall surface 305, as shown in FIG. The reflective surface 711 is inclined so that the height from the surface 301 gradually increases from an inner edge 712 on the LED chip 500 side toward an outer edge 713 in contact with the inner wall surface 305 . As a result, the light laterally emitted from the LED chip 500 can be appropriately directed upward in the figure. Also, the reflecting surface 711 is made of a reflecting resin 710 provided inside the housing recess 303 . Therefore, providing the reflective resin 710 eliminates the need to increase the size of the case 200 . Therefore, it is possible to increase the luminance and reduce the size of the semiconductor light emitting device 101 .

The reflective resin 710 is made of a material having a higher reflectance than the ceramic that is the material of the base material 300 . As a result, attenuation of the light from the LED chip 500 when reflected by the reflecting surface 711 can be suppressed. Using a white resin as the material of the reflective resin 710 is suitable for suppressing attenuation due to reflection.

The active layer 503 is the light emitting part in the LED chip 500 . As shown in FIGS. 13 and 15, height a from surface 301 to outer edge 713 is greater than height b from surface 301 to active layer 503 . Therefore, the reflective surface 711 is positioned in front of the light laterally emitted from the active layer 503 . Therefore, light emitted laterally from the active layer 503 can be efficiently reflected upward.

Having the inner wall surface 305 perpendicular to the surface 301 is advantageous for downsizing the case 200 .

In general, the Zener diode 600 absorbs more light than the reflective resin 710 made of white resin. By covering the Zener diode 600 with the reflective resin 710 , it is possible to prevent the light from the LED chip 500 from being absorbed by the Zener diode 600 , thereby further enhancing the luminance of the semiconductor light emitting device 101 . By disposing the Zener diode 600 in the damming recess 306, when a liquid or paste resin material is adhered to the damming recess 306 when forming the reflective resin 710, the resin material covers the Zener diode 600 appropriately. , the inner edge 712 may be prevented from exceeding the edge of the damming recess 306 by surface tension. This is suitable for preventing the reflective resin 710 from adhering to, for example, the active layer 503 of the LED chip 500 while achieving high luminance.

15-22 show another embodiment of the invention. In these figures, elements identical or similar to those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

15 and 16 show a semiconductor light emitting device according to a fourth embodiment of the invention. The semiconductor light emitting device 102 of this embodiment differs from the embodiment described above in the configuration of the damming recess 306 .

In this embodiment, the damming recess 306 has a surrounding portion 307 and a protruding portion 308 . The surrounding portion 307 has an annular shape along the inner wall surface 305 and surrounds the plurality of LED chips 500 . The protruding portion 308 protrudes from the surrounding portion 307 between adjacent LED chips 500 . One LED chip 500 is arranged in a region closer to the center of the case 200 than the tip of the projecting portion 308 .

In this embodiment, the inner edge 712 of the reflective resin 710 all coincides with the edge of the dam recess 306 . That is, the reflective resin 710 is provided at a position retracted from the surface 301 .

According to such an embodiment as well, the semiconductor light emitting device 102 can be increased in brightness and reduced in size. In addition, by providing the surrounding portion 307 in the damming recess 306, the inner edge 712 of the reflective resin 710 is positioned closer to the LED chip 500, and the resin material is not accidentally applied to the LED chip 500 when the reflective resin 710 is formed. can be prevented from adhering. By providing the protruding portion 308 , the reflective resin 710 can be appropriately formed in the space sandwiched between the adjacent LED chips 500 . A portion of the reflective surface 711 extended by the protrusion 308 can efficiently reflect the light from the LED chip 500 located in the center.

17 and 18 show a semiconductor light emitting device according to a fifth embodiment of the invention. The semiconductor light emitting device 103 of this embodiment differs from the above embodiments mainly in the configuration of the LED chip 500 . In this embodiment, as shown in FIG. 19, the LED chip 500 has an anode electrode 505 and a cathode electrode 506 formed on the upper surface side. A wire 550 is connected to these anode electrode 505 and cathode electrode 506 . Such an LED chip 500 is called a so-called two-wire type.

As shown in FIG. 17, the housing recess 303 has a circular shape in plan view. A plurality of die bonding pads 417 are formed on surface 301 . The LED chip 500 is die-bonded to the die-bonding pad 417 . A plurality of anode pads 411 and a plurality of cathode pads 412 are arranged with a plurality of die bonding pads 417 interposed therebetween. A wire 550 is connected to each anode pad 411 and each cathode pad 412 .

A reflective resin 710 covers the plurality of anode pads 411 and the plurality of cathode pads 412 . Also, the wires 550 are covered with a reflective resin 710 on the side of the plurality of anode pads 411 and the plurality of cathode pads 412 . The inner edge 712 surrounds the plurality of LED chips 500 and the plurality of die bonding pads 417 at spaced locations. Zener diode 600 and wire 610 are also covered with reflective resin 710 .

According to such an embodiment as well, the semiconductor light emitting device 103 can be made brighter and smaller. Also, the anode pad 411 and the cathode pad 412 are arranged outside the LED chip 500 . Therefore, the wires 550 connected to the 2-wire type LED chip 500 all extend outward from the LED chip 500 . A portion of the wire 550 bonded to the anode pad 411 and the cathode pad 412 and a portion in the vicinity thereof function to attract the resin material by surface tension when forming the reflective resin 710 . This allows the resin material to stay outside the LED chip 500 .

20 and 21 show a semiconductor light emitting device according to a sixth embodiment of the invention. The semiconductor light emitting device 104 of this embodiment differs from the above embodiments mainly in the overall configuration of the case 200 and the structure of the LED chip 500 .

In this embodiment, as shown in FIG. 22, an LED chip 500 includes a submount substrate 507 made of Si, for example, a substrate 501 made of n-type semiconductor layer 502, an active layer 503, and a p-type semiconductor layer 504 made of GaN, for example. and a stacked semiconductor layer, and emits, for example, blue light. An anode electrode 505 and a cathode electrode 506 are formed on the semiconductor layer on the submount substrate 507 side. These anode electrode 505 and cathode electrode 506 are joined by a conductive paste 511 to a wiring pattern (not shown) formed on the submount substrate 507 . Two electrodes (not shown) are formed on the submount substrate 507 . One end of each of two wires 550 is bonded to these electrodes. The other end of one wire 550 is bonded to the anode pad 411 and the other end of the other wire 550 is bonded to the cathode pad 412, as shown in FIGS.

The base material 300 has a long rectangular shape in plan view, and the accommodation recess 303 also has a long rectangular shape. In this embodiment, the inner wall surface 305 is inclined with respect to the direction perpendicular to the surface 301 . The reflective resin 710 covers a region of the surface 301 other than the portion where the submount substrate 507 of the LED chip 500 is bonded. An inner edge 712 of the reflective resin 710 is in contact with the submount substrate 507 . The anode pad 411 has a size that occupies most of the accommodation recess 303 in plan view. A plurality of LED chips 500 are die-bonded to the anode pad 411 . Zener diode 600 and wire 610 are covered with reflective resin 710 . It should be noted that the sub-mount substrate 507 may have a configuration in which the bypass function element referred to in the present invention is built.

An anode side wiring 461 and a cathode side wiring 462 are formed on the side surface of the substrate 300 . The anode side wiring 461 is connected to the anode pad 411 and the anode mounting electrode 431 . The cathode side wiring 462 is connected to the cathode pad 412 and the cathode mounting electrode 432 .

According to such an embodiment as well, the semiconductor light emitting device 104 can be made brighter and smaller. By covering most of the interior of the accommodation recess 303 with the reflective resin 710, it is possible to further promote high brightness. The submount substrate 507 is a portion that is reliably raised from the surface 301 . This can prevent the resin material from protruding into the active layer 503 when forming the reflective resin 710 . Since the submount substrate 507 is not a part that emits light, it does not hinder the enhancement of the brightness of the semiconductor light emitting device 104 .

As a modified example of the semiconductor light emitting device 104, the wiring 400 may be configured by a plate-shaped lead made of Cu, Fe, or an alloy thereof. Specifically, a lead having portions corresponding to the cathode pad 412, the cathode side wiring 462, and the cathode mounting electrode 432, and a lead having portions corresponding to the anode pad 411, the anode side wiring 461, and the anode mounting electrode 431 are combined. use. Moreover, in this modification, it is preferable that the portion forming the inner wall surface 305 of the base material 300 is formed of a thermosetting resin or a thermoplastic resin.

A seventh embodiment of the present invention will be described with reference to FIGS. 23 to 25. FIG.

A semiconductor light-emitting device 105 shown in the same drawing differs from the semiconductor light-emitting device 101 mainly in that it includes a filling portion 800 of FIG. 25 . Specifically, it is as follows.

Although omitted in the description of the semiconductor light emitting device 101 , in practice, the anode through wiring 440 and the cathode through wiring 450 are often formed with recesses that are recessed toward the rear surface 302 side of the substrate 300 . Such recesses are formed when the base material 300 is fired. FIG. 25 shows the recess 449 formed in the full-thickness anode through-wire 441 of the anode through-wire 440 . In this embodiment, as shown in FIGS. 23 and 24, a plurality of LED chips 500 are arranged at positions overlapping full-thickness anode through-wires 441 .

In this embodiment, three full-thickness anode through-wires 441 are formed at positions overlapping one LED chip 500, but the number of full-thickness anode through-wires 441 overlapping one LED chip 500 is three. , but may be one, two, or four or more. If the number of full-thickness anode through-wires 441 is large, the heat from LED chip 500 can be more efficiently transferred to anode mounting electrode 431 . This is preferable from the viewpoint of improving the heat dissipation of the semiconductor light emitting device 105 . In addition, the large number of full-thickness anode penetration wires 441 is suitable for reducing the electrical resistance between the surface layer 410 (anode pad 411 ) and the anode mounting electrode 431 .

The surface defining the recess 449 is covered with the surface layer 410 . Surface layer 410 is of substantially uniform thickness throughout. Therefore, recesses 419 are also formed in the surface layer 410 . A recess 419 shown in FIG. 25 is formed in the anode pad 411 of the surface layer 410 . The recess 419 is recessed toward the rear surface 302 of the base material 300 . The recess 419 overlaps the recess 449 when viewed in the thickness direction of the base material 300 . Therefore, in FIG. 25, recess 419 is positioned directly above recess 449 . Although not shown, the surface layer 410 in this embodiment has a structure in which a layer made of Ni and a layer made of Au are laminated. The layer made of Ni is interposed between the layer made of Au and the substrate 300 .

The filling portion 800 fills the recess 419 . Filling portion 800 is in contact with surface layer 410 and joint portion 510 . The filling portion 800 may be made of a conductive material, or may be made of an insulating material. In this embodiment, the filling portion 800 is made of a conductive material. An example of a conductive material forming filling portion 800 is an alloy of Au and Sn. The filling portion 800 is formed before placing the LED chip 500 on the surface layer 410 via the bonding portion 510 . Filling portion 800 is formed, for example, by applying paste to recess 419 .

Also in this embodiment, the joint portion 510 is interposed between any one of the plurality of LED chips 500 and the surface layer 410 . The bonding portion 510 is for bonding each LED chip 500 to the surface layer 410 . The joint portion 510 may be made of a conductive material or may be made of an insulating material. In this embodiment, the joint 510 is made of a conductive material. An example of a conductive material forming the joint 510 is an alloy of Au and Sn. Unlike this embodiment, the conductive material forming the joint 510 may be silver paste or solder.

According to the semiconductor light emitting device 105, by forming the filling portion 800 in the concave portion 419 before arranging the LED chip 500 on the base material 300, the surface of the portion where the LED chip 500 is to be arranged can be made flatter. can. Therefore, even if the LED chip 500 is arranged at a position overlapping the full-thickness anode through-wiring 441 when viewed in the thickness direction of the base material 300, the LED chip 500 does not get stuck in the concave portion 419. Therefore, when the LED chip 500 is arranged, It is possible to prevent the posture of the LED chip 500 from collapsing. Therefore, the manufacturing yield of the semiconductor light emitting device 105 can be improved.

Note that FIG. 25 shows an example in which the recess 449 is formed in the anode through wire 440 and the recess 419 is formed in the anode pad 411 of the surface layer 410 . Unlike that shown in FIG. 25, as shown in FIG. 26, a recess 459 is formed in the cathode through wire 450, and a recess 419 is formed at a position overlapping this recess 459 and the substrate 300 when viewed in the thickness direction. It is also possible that In this case, the filling portion 800 may be formed in the concave portion 419 and the LED chip 500 may be arranged at a position where the through-cathode wiring 450 and the substrate 300 overlap when viewed in the thickness direction.

Also, the configuration of the semiconductor light emitting device 105 may be employed in the semiconductor light emitting devices 102 and 103 .

The semiconductor light emitting device according to the present invention is not limited to the above-described embodiments. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be changed in various ways.

The number of LED chips is not limited to five, and may be any number.

A1, A2: Semiconductor light emitting device 2: Case 3: Base material 31: Front surface 32: Back surface 33: Receiving recess 34: Corner recess 4: Wiring 41: Surface layer 41a: Anode pad 41b: Cathode pad 41c: Bypass cathode pad 41d: Bypass anode pad 41e: anode plating wiring 41f: cathode plating wiring 41h: recess (second recess)
42: Intermediate layer 42a: Cathode relay wiring 43: Back layer 43a: Anode mounting electrode 43b: Cathode mounting electrode 44: Anode through wiring 44a: Full thickness anode through wiring 44b: Anode through wiring for plating 44c: Bypass cathode through wiring 44h: Recess (first recess)
45: Cathode through-wiring 45a: Front side cathode through-wiring 45b: Back side cathode through-wiring 45c: Cathode through-wiring for plating 45d: Bypass anode through-wiring 45h: Recess (first recess)
5: LED chip 5a: substrate 5b: n-type semiconductor layer 5c: active layer 5d: p-type semiconductor layer 5e: anode electrode 5f: cathode electrode 51: junction 6: Zener diode 61: wire 7: sealing resin 8: filling Part 9: Semiconductor light emitting device 91: Substrate 92: Lead 93: LED chip 94: Semiconductor layer 95: Submount substrate 96: Wire 97: Sealing resin a, b: Height 101, 102, 103, 104, 105: Semiconductor light emitting device 200: Case 300: Substrate 301: Front surface 302: Back surface 303: Receiving recess 304: Corner recess 305: Inner wall surface 306: Damping recess 307: Surrounding portion 308: Protruding portion 400: Wiring 410: Surface layer 411: Anode Pad 412: Cathode pad 413: Bypass cathode pad 414: Bypass anode pad 417: Die bonding pad 419: Recess (second recess)
420: intermediate layer 421: cathode relay wiring 430: back layer 431: anode mounting electrode 432: cathode mounting electrode 440: anode through wiring 441: full thickness anode through wiring 443: bypass cathode through wiring 449: recess (first recess)
450: Cathode through-wiring 451: Front-side cathode through-wiring 459: Concave portion (first concave portion)
460: Test electrode 461: Anode side wiring 462: Cathode side wiring 500: LED chip 501: Substrate 502: N-type semiconductor layer 503: Active layer 504: P-type semiconductor layer 505: Anode electrode 506: Cathode electrode 507: Submount substrate 510: Junction 511: Conductive paste 550: Wire 600: Zener diode (bypass function element)
610: Wire 700: Sealing resin 710: Reflective resin 711: Reflective surface 712: Inner edge 713: Outer edge 800: Filling part

Claims (10)

a substrate having a surface and a bottom surface facing opposite sides in a thickness direction, and a side surface connected to the surface and the bottom surface and facing in a direction orthogonal to the thickness direction ;
a plurality of first plated conductive parts formed on the surface;
a plurality of second plating conductive parts formed on the surface;
a first intermediate conductive portion formed inside the substrate and connected to the plurality of first plated conductive portions;
a second intermediate conductive portion formed inside the substrate and connected to the plurality of second plated conductive portions;
a third plated conductive portion formed on the bottom surface and conducting to the plurality of first plated conductive portions via the first intermediate conductive portion;
a fourth plated conductive portion formed on the bottom surface and conducting to the plurality of second plated conductive portions via the second intermediate conductive portion;
a plurality of LED chips having a back surface facing the front surface, an anode electrode and a cathode electrode formed on the back surface, and a plurality of LED chips mounted on the front surface;
The anode electrodes of the plurality of LED chips are individually conductively joined to the plurality of first plated conductive portions,
The cathode electrodes of the plurality of LED chips are individually conductively joined to the plurality of second plated conductive portions ,
a first plated wiring formed on the surface and conducting to the third plated conductive portion;
a second plating wiring formed on the surface and conducting to the fourth plating conductive portion;
the substrate has a first edge and a second edge forming a boundary between the surface and the side surface and extending in a first direction perpendicular to the thickness direction;
the first edge and the second edge are positioned apart from each other in a second direction orthogonal to the thickness direction and the first direction;
each of the first plated wiring and the second plated wiring extends from the first edge to the second edge,
When viewed in the thickness direction, the plurality of LED chips are sandwiched between the first plated wiring and the second plated wiring in the first direction,
the substrate has a frame projecting from the surface, and a recess defined by the surface and the frame and accommodating the plurality of LED chips;
The first plated wiring and the second plated wiring are interposed between the surface and the frame,
The semiconductor light-emitting device, wherein the first plated wiring and the second plated wiring are positioned apart from the recess when viewed in the thickness direction. further comprising a first plated through wire and a second plated through wire formed inside the substrate;
The first plated through wire is connected to the first plated wire and the third plated conductive portion,
2. The semiconductor light emitting device according to claim 1, wherein said second plated through wire is connected to said second plated wire and said fourth plated conductive portion. 3. The semiconductor light emitting device according to claim 2, wherein said first plated through wire and said second plated through wire are positioned apart from said first intermediate conductive portion and said second intermediate conductive portion when viewed in said thickness direction. Device. further comprising a sealing resin,
4. The semiconductor light emitting device according to claim 1, wherein said sealing resin is formed on said surface, covers said plurality of LED chips, and transmits light emitted from said plurality of LED chips. further comprising a reflective resin positioned between the surface and the sealing resin;
5. The semiconductor light emitting device according to claim 4, wherein said reflective resin is inclined so as to be further away from said surface as it is further away from said plurality of LED chips in said first direction. 6. The semiconductor light-emitting device according to claim 5, wherein said sealing resin protrudes toward said surface. 7. The semiconductor light emitting device according to claim 1 , wherein said first intermediate conductive portion and said second intermediate conductive portion are separated from each other by a predetermined distance . 8. The semiconductor light emitting device according to claim 1 , wherein said third plated conductive portion and said fourth plated conductive portion are adjacent to each other . When viewed in the thickness direction, the first intermediate conductive portion is positioned apart from the plurality of LED chips,
9. The semiconductor light emitting device according to claim 1 , wherein said second intermediate conductive portion overlaps said plurality of LED chips when viewed in said thickness direction . 10. The semiconductor light emitting device according to claim 1, further comprising a bypass function element mounted on said substrate and preventing a reverse overvoltage from being applied to said plurality of LED chips .

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