JP7139469B2 - ケイ素含有下層 - Google Patents
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- JP7139469B2 JP7139469B2 JP2021009221A JP2021009221A JP7139469B2 JP 7139469 B2 JP7139469 B2 JP 7139469B2 JP 2021009221 A JP2021009221 A JP 2021009221A JP 2021009221 A JP2021009221 A JP 2021009221A JP 7139469 B2 JP7139469 B2 JP 7139469B2
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- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- G03F7/42—Stripping or agents therefor
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- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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Description
Si(OR15)4 (D)
すなわち、米国特許第8,932,953号の組成物は、(i)ペンダントアリール部分及びペンダントSi-O結合の両方を有する特定の有機ポリマーと、(ii)特定のシロキサンポリマーとの組み合わせであり、ペンダントアリール部分がフェノール性ヒドロキシル基を生成することができる。構成成分(i)及び構成成分(ii)のこの組み合わせは、優れた貯蔵安定性及び接着性を有するだけでなく、ポジ型現像及びネガ型現像において不変のパターン特性を有する、レジスト下層膜を形成することができる組成物を得るために、米国特許第8,932,953号において必要とされている。この特許の組成物から形成された膜は、エッチングプロセスによって除去される。
Si(R50)p(X)4-p (8)
R50 3SiX (8a)
R50 2SiX2 (8b)
R50SiX3 (8c)
SiX4 (8d)
G(X2)m4 (9)
る官能基は、ポリマー鎖上の末端基であっても、ポリマー鎖にペンダント結合していてもよく、またはそれらの組み合わせであってもよい。好ましくは、架橋剤は、非ポリマー脂肪族ポリオール、ペンダント結合したヒドロキシル基を有するポリマー、またはそれらの混合物である。上限として、ポリマー架橋剤の各末端及び/または各繰り返し単位は、硬化時に縮合ポリマーと反応することができる官能基を有し得る。好ましくは、ポリマー架橋剤の繰り返し単位の最大50モル%、より好ましくは最大40モル%、さらにより好ましくは最大30モル%、さらにより好ましくは10~30モル%は、硬化時に縮合ポリマーと反応することができる官能基を有する。本発明において有用な好ましいポリマー架橋剤は、ヒドロキシ末端アルキレンオキシドポリマー及びペンデント結合したヒドロキシル基を有するポリマーである。概して、縮合ポリマー対架橋剤の重量比は、95:5~60:40、好ましくは90:10~70:30、より好ましくは85:15~70:30である。
Claims (14)
- (a)1つ以上の溶媒と、(b)以下の(i)及び(ii)の縮合物及び/または加水分解物:(i)1つ以上の縮合ケイ素含有ポリマーであって、フリーラジカル重合単位として、縮合性ケイ素含有部分を有する1つ以上の第1の不飽和モノマー及び縮合性ケイ素含有部分を含まない1つ以上の第2の不飽和モノマーを含み、少なくとも1つの第1の不飽和モノマーが式(1)を有し、
Si(R50)p(X)4-p (8)
式中、pは、0~3の整数であり、各R50は独立して、C1-30ヒドロカルビル部分及び置換C1-30ヒドロカルビル部分から選択され、各Xは独立して、ハロゲン、C1-10アルコキシ、-OH、-O-C(O)-R50、及び-(O-Si(R51)2)p2-X1から選択され、X1は独立して、ハロゲン、C1-10アルコキシ、-OH、-O-C(O)-R50から選択され、各R51は独立して、R50及びXから選択され、p2は、1~10の整数である1つ以上の縮合性ケイ素モノマー、と、(c)Si-O結合を含まず、かつ少なくとも2つのヒドロキシル基を有する1つ以上の架橋剤と、を含む、組成物。 - 前記架橋剤が、C2-4アルキレンオキシ繰り返し単位及び2個以上の末端ヒドロキシル基を有するアルキレンオキシドポリマー、及び2つ以上のペンデント結合したヒドロキシル基を有するポリマーからなる群から選択される、請求項1に記載の組成物。
- p=0または1である、請求項1または2に記載の組成物。
- 前記(c)架橋剤が、4つ以上のヒドロキシル基を有する、請求項1~3のいずれか1項に記載の組成物。
- Lが2価の連結基である、請求項1~4のいずれか1項に記載の組成物。
- 前記2価の連結基が、1~20個の炭素原子及び任意に1個以上のヘテロ原子を有する有機ラジカルである、請求項5に記載の組成物。
- 前記2価の連結基が、式-C(=O)-O-L1-を有し、式中、L1は、単結合、または1~20個の炭素原子を有する有機ラジカルである、請求項5に記載の組成物。
- 前記縮合物及び/または加水分解物が、重合単位として、前記式(3)を有する前記モノマー以外の縮合性ケイ素含有部分を含まない1つ以上の第2の不飽和モノマーをさらに含む、請求項1~7のいずれか1項に記載の組成物。
- 前記式(3)を有する前記モノマー以外の少なくとも1つの第2の不飽和モノマーが、酸性プロトンを有し、かつ水中で-5~13のpKaを有する、請求項8に記載の組成物。
- 前記縮合物及び/または加水分解物が、重合単位として、発色団部分を有する1つ以上の不飽和モノマーをさらに含む、請求項1~10のいずれか1項に記載の組成物。
- 前記発色団部分が、前記ポリマー骨格からペンダント結合している、請求項11に記載の組成物。
- (a)請求項1~12のいずれか1項に記載の組成物で基板をコーティングして、コーティング層を形成することと、(b)前記コーティング層を硬化させてポリマー下層を形成することと、(c)前記ポリマー下層にフォトレジストの層を配設することと、(d)前記フォトレジスト層をパターン状に露光して、潜像を形成することと、(e)前記潜像を現像して、中にレリーフ画像を有するパターン形成されたフォトレジスト層を形成することと、(f)前記レリーフ画像を前記基板に転写することと、(g)湿式剥離によって前記ポリマー下層を除去することと、を含む、方法。
- 前記ポリマー下層が、湿式剥離によって除去される、請求項13に記載の方法。
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US201762584151P | 2017-11-10 | 2017-11-10 | |
US62/584,151 | 2017-11-10 |
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JP2018201520A Division JP2019090010A (ja) | 2017-11-10 | 2018-10-26 | ケイ素含有下層 |
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US (2) | US20190146343A1 (ja) |
JP (2) | JP2019090010A (ja) |
KR (1) | KR102186106B1 (ja) |
CN (1) | CN109765758B (ja) |
TW (1) | TWI731274B (ja) |
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US20180164685A1 (en) * | 2016-12-14 | 2018-06-14 | Rohm And Haas Electronic Materials Llc | Method using silicon-containing underlayers |
US11360387B2 (en) * | 2017-08-04 | 2022-06-14 | Rohm And Haas Electronic Materials Llc | Silicon-containing underlayers |
WO2021015181A1 (ja) * | 2019-07-25 | 2021-01-28 | 日産化学株式会社 | レジスト下層膜形成組成物 |
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JP2013051410A (ja) | 2011-07-29 | 2013-03-14 | Dic Corp | ドライエッチングレジスト材料、レジスト膜及びパターン形成物 |
JP2016141797A (ja) | 2015-02-05 | 2016-08-08 | 信越化学工業株式会社 | ケイ素含有重合体、ケイ素含有化合物、レジスト下層膜形成用組成物、及びパターン形成方法 |
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KR20130115358A (ko) | 2011-02-15 | 2013-10-21 | 디아이씨 가부시끼가이샤 | 나노임프린트용 경화성 조성물, 나노임프린트 성형체 및 패턴 형성 방법 |
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JP2013041140A (ja) | 2011-08-17 | 2013-02-28 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
JP2016141797A (ja) | 2015-02-05 | 2016-08-08 | 信越化学工業株式会社 | ケイ素含有重合体、ケイ素含有化合物、レジスト下層膜形成用組成物、及びパターン形成方法 |
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US20190146343A1 (en) | 2019-05-16 |
KR102186106B1 (ko) | 2020-12-03 |
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