JP7091696B2 - 物理量センサおよび半導体装置 - Google Patents
物理量センサおよび半導体装置 Download PDFInfo
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- JP7091696B2 JP7091696B2 JP2018027846A JP2018027846A JP7091696B2 JP 7091696 B2 JP7091696 B2 JP 7091696B2 JP 2018027846 A JP2018027846 A JP 2018027846A JP 2018027846 A JP2018027846 A JP 2018027846A JP 7091696 B2 JP7091696 B2 JP 7091696B2
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Description
第1実施形態の物理量センサについて、図1、図2を参照して述べる。本実施形態の物理量センサは、例えば、自動車などの車両などに搭載され、車両もしくはその構成部品にかかる物理量に応じた信号を出力する物理量センサに適用される。
η=μ×v(n-1)・・・(2)
なお、(1)式または(2)式においては、τが混合体で生じるずり応力(単位:Pa)を、vが混合体に生じるずり速度(単位:sec-1)を、ηが混合体の粘度(単位:Pa・sec)を示す。また、μは、任意の定数である。nは、2よりも大きい数である。つまり、変性接着層21は、図2に示すように、変性接着層21にかかるずり速度が大きくなる、すなわち、せん断刺激が速くなるほど、変性接着層21の粘度ηや変性接着層21に生じるずり応力τが多次関数的に大きくなる特性を示す。この変性接着層21の効果については、後述する。
第2実施形態の物理量センサについて、図3を参照して述べる。図3では、図1と同様に、厚みや寸法などを誇張してデフォルメしたものを示している。
第3実施形態の物理量センサについて、図4を参照して述べる。図4では、図1と同様に、厚みや寸法などを誇張してデフォルメしたものを示している。
第4実施形態の物理量センサについて、図5を参照して述べる。図5では、図1と同様に、厚みや寸法などを誇張してデフォルメしたものを示している。
第4実施形態の物理量センサの変形例について、図6を参照して述べる。図6では、図1と同様に、厚みや寸法などを誇張してデフォルメしたものを示している。
第5実施形態の物理量センサについて、図7を参照して述べる。図7では、図1と同様に、厚みや寸法などを誇張してデフォルメしたものを示している。
第5実施形態の物理量センサの変形例について、図8を参照して述べる。図8では、図1と同様に、厚みや寸法などを誇張してデフォルメしたものを示している。
なお、上記した各実施形態に示した物理量センサは、本発明の物理量センサの一例を示したものであり、上記の各実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
2 接着層
21 変性接着層
211 ダイラタンシー部
22 低弾性接着剤
3 センサチップ
31 第1基板
32 第2基板
3a 一面
4 ワイヤ
Claims (5)
- 物理量に応じた信号を出力するセンサ部を有するセンサチップ(3)と、
前記センサチップが搭載された支持部材(1)と、
前記支持部材の表面(1a)上に配置され、前記センサチップを支持する接着層(2)と、
前記センサチップのうち前記接着層の反対側の一面(3a)側において、前記センサチップと電気的に接続されたワイヤ(4)と、を備え、
前記接着層は、一部のみが、ずり速度が大きくなるほど、ずり応力が多次関数的に大きくなる、ダイラタンシー性を示す材料で構成された変性接着層(21)とされており、
前記センサチップのうち前記ワイヤが接続されている部分をワイヤ接続部とし、前記センサチップの前記一面のうち前記ワイヤ接続部および前記ワイヤ接続部に隣接する領域をワイヤ接続領域として、
前記一面に対する法線方向から見て、前記接着層のうち前記ワイヤ接続領域を投影した領域が前記変性接着層であり、前記接着層の残部は、前記変性接着層よりも低弾性を示す低弾性材料で構成されている、物理量センサ。 - 前記センサチップは、前記センサ部を有する第1基板(31)と、前記一面に対する法線方向から見て前記第1基板の直下に配置される第2基板(32)と、が積層された構成とされており、
前記接着層は、前記第2基板上に配置され、前記第1基板を支持している請求項1に記載の物理量センサ。 - 前記センサチップは、前記センサ部を有する第1基板(31)と、前記一面に対する法線方向から見て前記第1基板の直下に配置される第2基板(32)と、が積層された構成とされており、
前記接着層は、前記第2基板下に配置され、前記第2基板を支持している請求項1に記載の物理量センサ。 - 前記変性接着層は、可逆性材料により構成されている、請求項1ないし3のいずれか1つに記載の物理量センサ。
- 回路チップと、
前記回路チップが搭載された支持部材(1)と、
前記支持部材の表面(1a)上に配置され、前記回路チップを支持する接着層(2)と、
前記回路チップのうち前記接着層の反対側の一面(3a)側において、前記回路チップと電気的に接続されたワイヤ(4)と、を備え、
前記接着層は、一部のみが、ずり速度が大きくなるほど、ずり応力が多次関数的に大きくなる、ダイラタンシー性を示す材料で構成された変性接着層(21)とされており、
前記回路チップのうち前記ワイヤが接続されている部分をワイヤ接続部とし、前記回路チップの前記一面のうち前記ワイヤ接続部および前記ワイヤ接続部に隣接する領域をワイヤ接続領域として、
前記一面に対する法線方向から見て、前記接着層のうち前記ワイヤ接続領域を投影した領域が前記変性接着層であり、前記接着層の残部は、前記変性接着層よりも低弾性を示す低弾性材料で構成されている、半導体装置。
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US16/266,159 US20190256349A1 (en) | 2018-02-20 | 2019-02-04 | Physical quantity sensor and semiconductor device |
DE102019201492.5A DE102019201492B4 (de) | 2018-02-20 | 2019-02-06 | Sensor für eine physikalische grösse und halbleitervorrichtung |
CN201910112771.2A CN110176435B (zh) | 2018-02-20 | 2019-02-13 | 物理量传感器和半导体器件 |
US17/022,476 US20200407216A1 (en) | 2018-02-20 | 2020-09-16 | Physical quantity sensor and semiconductor device |
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KR102455438B1 (ko) * | 2016-08-08 | 2022-10-14 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 소자, 제조 방법, 및 전자 기기 |
AU2017321294B2 (en) * | 2016-08-31 | 2021-12-09 | The Regents Of The University Of California | Devices comprising carbon-based material and fabrication thereof |
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CN110176435B (zh) | 2023-10-24 |
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