JP7016825B2 - Method of manufacturing substrate holding device, exposure device and article - Google Patents

Method of manufacturing substrate holding device, exposure device and article Download PDF

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JP7016825B2
JP7016825B2 JP2019048237A JP2019048237A JP7016825B2 JP 7016825 B2 JP7016825 B2 JP 7016825B2 JP 2019048237 A JP2019048237 A JP 2019048237A JP 2019048237 A JP2019048237 A JP 2019048237A JP 7016825 B2 JP7016825 B2 JP 7016825B2
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substrate
light
base
holding device
reflective member
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JP2019211755A (en
JP2019211755A5 (en
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峻也 坂田
彰宏 高橋
昇 大阪
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Canon Inc
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Canon Inc
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Priority to TW108116144A priority Critical patent/TWI777066B/en
Priority to KR1020190059840A priority patent/KR102544594B1/en
Priority to US16/422,760 priority patent/US10761434B2/en
Priority to CN201910443206.4A priority patent/CN110554576A/en
Priority to CN202310086053.9A priority patent/CN115903402A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825Mounting of individual elements, e.g. mounts, holders or supports
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Description

本発明は、基板保持装置、露光装置及び物品の製造方法に関する。 The present invention relates to a substrate holding device, an exposure device, and a method for manufacturing an article.

フォトリソグラフィ技術を用いて半導体素子や液晶表示素子等のデバイスを製造する際に、マスクのパターンを投影光学系によって基板に投影してパターンを転写する露光装置が使用されている。 When manufacturing devices such as semiconductor elements and liquid crystal display elements using photolithography technology, an exposure device is used in which a mask pattern is projected onto a substrate by a projection optical system to transfer the pattern.

デバイスの製造工程は、基板に対してレジストを塗布する工程や基板に対して露光によりパターンを転写する工程、パターンが転写された基板を現像する工程等を含む。一般的に、基板に対してレジストを塗布する工程やパターンが転写された基板を現像する工程は、基板に対して露光によりパターンを転写する露光装置とは異なるコータ・デベロッパ等で行われる。 The device manufacturing step includes a step of applying a resist to the substrate, a step of transferring the pattern to the substrate by exposure, a step of developing the substrate to which the pattern is transferred, and the like. Generally, a step of applying a resist to a substrate and a step of developing a substrate on which a pattern is transferred are performed by a coater / developer or the like different from an exposure apparatus that transfers a pattern to the substrate by exposure.

このようにデバイスの製造工程において、異なる装置間で基板の受け渡しを行いながらデバイスが製造される。各装置には、基板を吸着等により保持し、基板の受け渡しを行うための基板保持機構が設けられており、基板保持機構は、基板を保持する基台と基板を昇降させるリフトピン等の基板昇降機構を含むことが一般的である。 In this way, in the device manufacturing process, the device is manufactured while the substrate is transferred between different devices. Each device is provided with a board holding mechanism for holding the board by adsorption or the like and transferring the board. The board holding mechanism is a base for holding the board and a lift pin for raising and lowering the board. It is common to include a mechanism.

ここで、基板の下部に設けられた基台と基板昇降機構との間には隙間が生じる。それゆえ、基板には、その下部に基台や基板昇降機構が配置された領域と、それらが配置されていない領域が生じる。 Here, a gap is created between the base provided at the lower part of the substrate and the substrate elevating mechanism. Therefore, the substrate has a region in which the base and the substrate elevating mechanism are arranged below the substrate and a region in which they are not arranged.

昨今は、露光光が透過する透明基板を用いてデバイスを製造することも一般的になっており、透明基板に対して露光を行う場合には、基板を透過した露光光が基台や基板昇降機構において反射され、その反射光が基板上に塗布されたレジストを感光する。基台に設けられた隙間によりレジストに照射される光量に差が発生することで基板上に露光ムラが生じる。 In recent years, it has become common to manufacture devices using a transparent substrate through which exposure light is transmitted. When exposing a transparent substrate, the exposure light transmitted through the substrate moves up and down the base and the substrate. It is reflected by the mechanism, and the reflected light sensitizes the resist applied on the substrate. The gap provided in the base causes a difference in the amount of light applied to the resist, which causes uneven exposure on the substrate.

中国特許出願公開第105045048号明細書Chinese Patent Application Publication No. 105045048

上述した露光ムラを低減させるための手法として、特許文献1は、基板下部の隙間に反射防止部材を設けることで、露光光の反射を制限する構成を開示している。特許文献1では、基板下部の隙間に入射した露光光が反射光として基板上のレジストを感光し、当該隙間の上に位置する基板上の領域において露光量が過剰となることを課題としている。当該隙間の上に位置する基板上の領域における露光量を低減させるために、特許文献1における基板保持装置では、当該隙間に反射防止部材を配置している。 As a method for reducing the above-mentioned exposure unevenness, Patent Document 1 discloses a configuration in which reflection of exposure light is limited by providing an antireflection member in a gap under the substrate. The problem in Patent Document 1 is that the exposure light incident on the gap at the lower part of the substrate sensitizes the resist on the substrate as reflected light, and the exposure amount becomes excessive in the region on the substrate located above the gap. In the substrate holding device in Patent Document 1, in order to reduce the exposure amount in the region on the substrate located above the gap, the antireflection member is arranged in the gap.

一方、本願の発明者は、基板下部の隙間に入射した露光光は基板保持装置の下部へと進んで減衰され、これらの大部分は基板上のレジストに到達しないことを見出した。そこで、本発明においては、基板を透過して基板下部の隙間に入射した露光光を再び基板に入射させることで、上述した露光ムラを低減させることを目的とする。 On the other hand, the inventor of the present application has found that the exposure light incident on the gap in the lower part of the substrate proceeds to the lower part of the substrate holding device and is attenuated, and most of them do not reach the resist on the substrate. Therefore, it is an object of the present invention to reduce the above-mentioned exposure unevenness by re-entering the exposure light that has passed through the substrate and is incident on the gap under the substrate.

上記課題を解決する本発明の基板保持装置は、基板を保持する基台と、前記基板を昇降させる昇降機構と、前記基台と前記昇降機構との間の隙間に設けられ、前記基板を透過した光を反射する反射部材と、を有し、前記基板を透過した光に対する前記反射部材の反射率は、前記基板を透過した光に対する前記基台の反射率よりも高く、前記反射部材は、前記基板を透過した光が前記基台により反射され、前記基板における前記基台の上部に対応する領域に到達する光量と、前記基板を透過した光が前記反射部材により反射され、前記隙間の上部に対応する領域に到達する光量と、の差が小さくなるように設けられていることを特徴とする。 The substrate holding device of the present invention for solving the above problems is provided in a gap between a base for holding the substrate, an elevating mechanism for raising and lowering the substrate, and the base and the elevating mechanism, and transmits the substrate. The reflective member has a reflective member that reflects the light, and the reflectance of the reflective member with respect to the light transmitted through the substrate is higher than the reflectance of the base with respect to the light transmitted through the substrate . The amount of light transmitted through the substrate is reflected by the base and reaches the region corresponding to the upper part of the base in the substrate, and the light transmitted through the substrate is reflected by the reflecting member and is reflected in the upper part of the gap. It is characterized in that it is provided so that the difference between the amount of light reaching the region corresponding to is small and the amount of light is small.

本発明によれば、露光ムラを低減させることが可能な基板保持装置及び露光装置が得られる。 According to the present invention, a substrate holding device and an exposure device capable of reducing exposure unevenness can be obtained.

露光装置の概略図である。It is a schematic diagram of an exposure apparatus. 基板保持機構の概略図である。It is a schematic diagram of a substrate holding mechanism. 基板保持機構を構成する基台の第1実施例を示す図である。It is a figure which shows the 1st Embodiment of the base which constitutes the substrate holding mechanism. 基板保持機構を構成する基台の第2実施例を示す図である。It is a figure which shows the 2nd Embodiment of the base which constitutes the substrate holding mechanism. 基板保持機構を構成する基台の第3実施例を示す図である。It is a figure which shows the 3rd Embodiment of the base which constitutes the substrate holding mechanism. 基板保持機構を構成する基台の第4実施例を示す図である。It is a figure which shows the 4th Embodiment of the base which constitutes the substrate holding mechanism. 露光ムラの発生メカニズムを示す概略図である。It is a schematic diagram which shows the occurrence mechanism of exposure unevenness. 感光材における光の波長と透過率の関係を示す図である。It is a figure which shows the relationship between the wavelength and the transmittance of light in a photosensitive material. 露光ムラを低減させるための構成を示す図である。It is a figure which shows the structure for reducing the exposure unevenness. 露光ムラを低減させるメカニズムを示す概略図である。It is a schematic diagram which shows the mechanism which reduces the exposure unevenness. 反射部材の位置と形状因子kとの関係を示す図である。It is a figure which shows the relationship between the position of a reflective member, and a shape factor k. 基台の上面における拡散反射率及び正反射率を示す図である。It is a figure which shows the diffuse reflectance and specular reflectance on the upper surface of a base. 基板昇降機構の上面における拡散反射率及び正反射率を示す図である。It is a figure which shows the diffuse reflectance and specular reflectance on the upper surface of a substrate elevating mechanism. 反射部材の上面における拡散反射率及び正反射率を示す図である。It is a figure which shows the diffuse reflectance and specular reflectance on the upper surface of a reflective member. 基板保持機構の詳細を示す図である。It is a figure which shows the detail of a substrate holding mechanism.

以下、添付図面を参照して、本発明の好適な実施の形態について説明する。本発明の基板保持装置は、サファイア基板やガラス基板等の透明基板を保持するために好適なものである。サファイア基板はLED(Light Emitting Diode)素子等の基板として用いられる。ガラス基板は液晶パネル等の基板として用いられる。 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The substrate holding device of the present invention is suitable for holding a transparent substrate such as a sapphire substrate or a glass substrate. The sapphire substrate is used as a substrate for an LED (Light Emitting Diode) element or the like. The glass substrate is used as a substrate for a liquid crystal panel or the like.

図1は、本実施形態の一側面としての露光装置1の構成を示す概略図である。露光装置1は、基板上にパターンを形成するために用いられる。露光装置1は、光源110を含む光源装置100、原版310を照明する照明光学系200、原版310を保持する原版ステージ300を含む。さらに、露光装置1は、原版310のパターンの像を基板ステージ500(基板保持装置)上に保持された基板510に投影する投影光学系400を含む。 FIG. 1 is a schematic view showing a configuration of an exposure apparatus 1 as one aspect of the present embodiment. The exposure apparatus 1 is used to form a pattern on the substrate. The exposure device 1 includes a light source device 100 including a light source 110, an illumination optical system 200 for illuminating the original plate 310, and an original plate stage 300 holding the original plate 310. Further, the exposure apparatus 1 includes a projection optical system 400 that projects an image of the pattern of the original plate 310 onto the substrate 510 held on the substrate stage 500 (substrate holding device).

光源110として高圧水銀ランプやエキシマレーザ等が用いられる。なお、一般的な露光光として、g線(波長約436nm)や、波長領域が100nmから400nmの近紫外光が用いられる。例えば、超高圧水銀ランプのg線やi線(波長約365nm)、KrFエキシマレーザ光(波長約248nm)、ArFエキシマレーザ光(波長約193nm)、F2レーザ光(波長約157nm)などが用いられる。 A high-pressure mercury lamp, an excimer laser, or the like is used as the light source 110. As general exposure light, g-ray (wavelength of about 436 nm) or near-ultraviolet light having a wavelength region of 100 nm to 400 nm is used. For example, g-line or i-line (wavelength about 365 nm), KrF excimer laser light (wavelength about 248 nm), ArF excima laser light (wavelength about 193 nm), F2 laser light (wavelength about 157 nm), etc. of an ultrahigh pressure mercury lamp are used. ..

光源110から照射された光は、照明光学系200に含まれる光学系210を介して原版310に導かれる。投影光学系400は光学系410と開口絞り420を含み、原版310のパターンを所定の投影倍率で基板510に投影する。基板510には特定の波長の光に対して感度を有する感光材(レジスト)が塗布されており、原版310のパターンの像がレジストに投影されると、レジストに潜像パターンが形成される。 The light emitted from the light source 110 is guided to the original plate 310 via the optical system 210 included in the illumination optical system 200. The projection optical system 400 includes an optical system 410 and an aperture stop 420, and projects the pattern of the original plate 310 onto the substrate 510 at a predetermined projection magnification. A photosensitive material (resist) having sensitivity to light of a specific wavelength is applied to the substrate 510, and when an image of the pattern of the original plate 310 is projected onto the resist, a latent image pattern is formed on the resist.

基板510は、基板保持装置としての基板保持機構500によって保持される。基板保持機構500は、不図示の吸着パッドを用いた真空吸着や静電吸着等により基板510を保持する。基板保持機構500の詳細な構成については後述する。 The substrate 510 is held by the substrate holding mechanism 500 as a substrate holding device. The substrate holding mechanism 500 holds the substrate 510 by vacuum suction, electrostatic suction, or the like using a suction pad (not shown). The detailed configuration of the substrate holding mechanism 500 will be described later.

露光装置1は、本実施形態では、原版310と基板510とを走査方向に互いに同期走査しながら、原版310のパターンを基板510に転写する走査型露光装置(スキャナー)である。以下では、鉛直方向をZ軸方向、Z軸方向に垂直な平面内における基板510の走査方向をY軸方向、Z軸方向及びY軸方向に垂直な方向である非走査方向をX軸方向とする。 In the present embodiment, the exposure apparatus 1 is a scanning exposure apparatus (scanner) that transfers the pattern of the original plate 310 to the substrate 510 while synchronously scanning the original plate 310 and the substrate 510 in the scanning direction. In the following, the vertical direction is the Z-axis direction, the scanning direction of the substrate 510 in the plane perpendicular to the Z-axis direction is the Y-axis direction, and the non-scanning direction which is the direction perpendicular to the Z-axis direction and the Y-axis direction is the X-axis direction. do.

投影光学系400によって基板510上に投影される光量(露光量)は、パターンの線幅を決定する重要な要素であり、適切な露光量で基板510上のレジストを露光することで、精度の高いパターンを形成することが可能となる。 The amount of light (exposure amount) projected onto the substrate 510 by the projection optical system 400 is an important factor for determining the line width of the pattern, and by exposing the resist on the substrate 510 with an appropriate exposure amount, the accuracy can be improved. It is possible to form a high pattern.

例えば、基板510上のパターン形成領域に同一のパターンを繰り返し形成する場合には、パターン形成領域の全域において露光ムラが生じないように露光を行うことが好ましい。照明光学系200や投影光学系400の構成を工夫することで、基板510に投影される露光量のムラを低減させることは可能であるが、所謂フレア光が基板510上のレジストに照射されることで、レジストに入射する光量にムラが生じ得る。 For example, when the same pattern is repeatedly formed in the pattern forming region on the substrate 510, it is preferable to perform exposure so that exposure unevenness does not occur in the entire area of the pattern forming region. Although it is possible to reduce the unevenness of the exposure amount projected on the substrate 510 by devising the configurations of the illumination optical system 200 and the projection optical system 400, so-called flare light is applied to the resist on the substrate 510. As a result, the amount of light incident on the resist may be uneven.

ここで、原版310を透過した光のうち、投影光学系400に含まれる光学系410及び開口絞り420の開口部を透過し、基板510上のレジストに照射される光を正規光とすると、この正規光以外の光がフレア光である。 Here, it is assumed that among the light transmitted through the original plate 310, the light transmitted through the openings of the optical system 410 and the aperture diaphragm 420 included in the projection optical system 400 and irradiated to the resist on the substrate 510 is normal light. Light other than normal light is flare light.

(露光ムラの発生について)
続いて図2乃至7を用いて露光装置における露光ムラの発生原因について説明する。図2(A)は、基板保持機構500により基板510が保持された状態を示している。図2(B)は、基板昇降機構522により基板510がZ軸方向に持ち上げられた様子を示している。基板510は、基板昇降機構522によって基板保持機構500から引き離された状態で、不図示の搬送ロボット等の基板搬送装置によって搬送される。
(About the occurrence of uneven exposure)
Subsequently, the causes of exposure unevenness in the exposure apparatus will be described with reference to FIGS. 2 to 7. FIG. 2A shows a state in which the substrate 510 is held by the substrate holding mechanism 500. FIG. 2B shows how the substrate 510 is lifted in the Z-axis direction by the substrate elevating mechanism 522. The substrate 510 is conveyed by a substrate transfer device such as a transfer robot (not shown) in a state of being separated from the substrate holding mechanism 500 by the substrate elevating mechanism 522.

図2(A)において、基板保持機構500は、基台521と基板510の間に位置する不図示の吸着パッドを用いて基板510を真空吸着する。吸着パッドは基台521の上面に設けられる。なお、基板510の保持方法は真空吸着に限らず、例えば静電吸着により基板510を保持する構成としても良い。基板510に対して露光を行うときには、図2(A)に示したように、基板510は基台521によって保持される。 In FIG. 2A, the substrate holding mechanism 500 vacuum sucks the substrate 510 using a suction pad (not shown) located between the base 521 and the substrate 510. The suction pad is provided on the upper surface of the base 521. The holding method of the substrate 510 is not limited to vacuum suction, and the substrate 510 may be held by, for example, electrostatic suction. When the substrate 510 is exposed, the substrate 510 is held by the base 521 as shown in FIG. 2 (A).

基板昇降機構522はZ軸方向に移動可能であり、基板510が基台521から引き離されるときには、図2(B)に示したように、基板昇降機構522がZ軸方向に移動し、基板510をZ軸方向の上側に持ち上げる。 The substrate elevating mechanism 522 is movable in the Z-axis direction, and when the substrate 510 is pulled away from the base 521, the substrate elevating mechanism 522 moves in the Z-axis direction and the substrate 510 is moved as shown in FIG. 2 (B). Is lifted upward in the Z-axis direction.

基板昇降機構522は、Z軸方向に上下運動をする昇降部522B、基板510と接触する接触部522Cを含み、接触部522Cの上面を上面522Aとする。接触部522Cは基板510と接触するため、基板510に傷を生じさせにくいことや基板510との接触により摩耗しにくいことを考慮して接触部522Cの材質が決定される。接触部522Cは、一般に樹脂材料等から構成される。 The substrate elevating mechanism 522 includes an elevating portion 522B that moves up and down in the Z-axis direction and a contact portion 522C that comes into contact with the substrate 510, and the upper surface of the contact portion 522C is an upper surface 522A. Since the contact portion 522C comes into contact with the substrate 510, the material of the contact portion 522C is determined in consideration of the fact that the substrate 510 is less likely to be scratched and the contact portion 522C is less likely to be worn due to contact with the substrate 510. The contact portion 522C is generally made of a resin material or the like.

ここで、図2(A)に示したように、基板510が基台521によって保持されている状態では、基板510と基板昇降機構522の間にはわずかな隙間が設けられている。これにより、基板510が基板昇降機構522と干渉し、基板510の位置がZ軸方向に変化するリスクを低減することができる。 Here, as shown in FIG. 2A, when the substrate 510 is held by the base 521, a slight gap is provided between the substrate 510 and the substrate elevating mechanism 522. As a result, it is possible to reduce the risk that the substrate 510 interferes with the substrate elevating mechanism 522 and the position of the substrate 510 changes in the Z-axis direction.

次に、基台521と基板昇降機構522との配置関係について、図3乃至6を用いて説明する。図3は、XY平面において基板保持機構500を構成する基台521が8つの基板保持部に分割され、各基板保持部の間に隙間が設けられた例を示している。Y軸方向のプラス側に基板保持部521a、b、c、dが配置され、それらの隙間に基板昇降部522a、b、cが設けられている。また、Y軸方向のマイナス側に基板保持部521e、f、g、hが配置され、それらの隙間に基板昇降部522d、e、fが設けられている。図3は、基板昇降部としてリフトバーを配置した例を示している。 Next, the arrangement relationship between the base 521 and the substrate elevating mechanism 522 will be described with reference to FIGS. 3 to 6. FIG. 3 shows an example in which the base 521 constituting the substrate holding mechanism 500 is divided into eight substrate holding portions in the XY plane, and a gap is provided between the substrate holding portions. The substrate holding portions 521a, b, c, and d are arranged on the positive side in the Y-axis direction, and the substrate elevating portions 522a, b, and c are provided in the gaps between them. Further, the substrate holding portions 521e, f, g, and h are arranged on the minus side in the Y-axis direction, and the substrate elevating portions 522d, e, and f are provided in the gaps between them. FIG. 3 shows an example in which a lift bar is arranged as a board elevating part.

図4では、基台521が、基板保持部521a´、b´、c´、d´に分割されている。各基板保持部のそれぞれには基板昇降部522a´、b´、c´、d´が設けられている。また、基板保持部521a´と521b´の間の隙間に基板昇降部522e´が設けられ、基板保持部521c´と521d´の間の隙間に基板昇降部522f´が設けられている。図4における各基板昇降部はリフトバーによって構成されている。 In FIG. 4, the base 521 is divided into substrate holding portions 521a', b', c', and d'. Each of the substrate holding portions is provided with a substrate elevating portion 522a', b', c', d'. Further, a substrate elevating portion 522e'is provided in the gap between the substrate holding portions 521a'and 521b', and a substrate elevating portion 522f'is provided in the gap between the substrate holding portions 521c'and 521d'. Each board elevating part in FIG. 4 is composed of a lift bar.

また、図5では、基台521が、基板保持部521a´´、b´´、c´´、d´´、e´´、f´´に分割されている。各基板保持部には貫通孔が設けられており、貫通孔の内部をZ軸方向に移動する基板昇降機構としてのリフトピン522が設置されている。 Further, in FIG. 5, the base 521 is divided into the substrate holding portions 521a ″, b ″, c ″, d ″, e ″, and f ″. Each substrate holding portion is provided with a through hole, and a lift pin 522 as a substrate elevating mechanism that moves inside the through hole in the Z-axis direction is installed.

図6(A)では、基台ベース521Aと、基台ベース521Aに設けられた複数の基板保持部521Bによって基台521を構成している。基板保持部521B同士の間には隙間が設けられている。基板510を載置した基板搬送部527を当該隙間に配置することにより、基台521に対して基板搬送部527が重ね合わされ、基板510は基台521によって保持される。基板搬送部527は、基板搬送装置528によってX軸、Y軸、Z軸方向に適宜駆動される。基板510を保持した状態で基板搬送部527をZ軸方向に昇降させることで、基板510をZ軸方向に昇降させることができる。 In FIG. 6A, the base 521A is composed of the base base 521A and a plurality of substrate holding portions 521B provided on the base base 521A. A gap is provided between the substrate holding portions 521B. By arranging the substrate transfer portion 527 on which the substrate 510 is placed in the gap, the substrate transfer portion 527 is overlapped with the base 521, and the substrate 510 is held by the base 521. The substrate transfer unit 527 is appropriately driven in the X-axis, Y-axis, and Z-axis directions by the substrate transfer device 528. By raising and lowering the substrate transfer unit 527 in the Z-axis direction while holding the substrate 510, the substrate 510 can be raised and lowered in the Z-axis direction.

図6(B)は、基台521に対して基板搬送部527が重ね合わされた状態を示している。図6(C)は、基台521に対して基板搬送部527が重ね合わされた状態をY軸方向から見た図である。基板保持部521B同士の隙間に基板搬送部527が配置されていることがわかる。 FIG. 6B shows a state in which the substrate transport portion 527 is superposed on the base 521. FIG. 6C is a view of the state in which the substrate transport portion 527 is superposed on the base 521 as viewed from the Y-axis direction. It can be seen that the substrate transport portion 527 is arranged in the gap between the substrate holding portions 521B.

以上説明したように、図6で示した例では、基板昇降機構522の代わりに基板搬送部527によって基板510の昇降が行われる。このように、基板昇降機構522は、図3や図4に示したリフトバータイプのものでも良いし、図5に示したリフトピンタイプのものでも良く、図6に示したように、基板搬送部527に基板昇降機構としての機能を持たせても良い。いずれにしても、基板昇降機構522を構成する基板昇降部は、基台521に設けられた隙間に配置されている。そして図3乃至6を用いて説明したように、基板保持部同士の間や基板保持部と基板昇降部との間には隙間が設けられており、この隙間を通る露光光が露光ムラの発生の要因となる。 As described above, in the example shown in FIG. 6, the substrate 510 is elevated and lowered by the substrate transport unit 527 instead of the substrate elevating mechanism 522. As described above, the substrate elevating mechanism 522 may be the lift bar type shown in FIGS. 3 or 4, or the lift pin type shown in FIG. 5, and as shown in FIG. 6, the substrate transport unit may be used. The 527 may have a function as a board elevating mechanism. In any case, the board elevating part constituting the board elevating mechanism 522 is arranged in the gap provided in the base 521. As described with reference to FIGS. 3 to 6, a gap is provided between the substrate holding portions and between the substrate holding portion and the substrate elevating portion, and the exposure light passing through the gap causes exposure unevenness. It becomes a factor of.

続いて、図7を用いて露光ムラが発生するメカニズムについて説明する。図7は、基板510上に塗布されたレジスト511に露光光が照射される様子を示している。基台521上部の空間からレジスト511に入射した光線10は、レジスト511及び基板510を透過し、基台521の上面521Aにおいて反射される。基板昇降機構522上部の空間からレジスト511に入射した光線12は、レジスト511及び基板510を透過し、基板昇降機構522の上部で反射される。一方、基台521と基板昇降機構522の間の隙間の上部からレジスト511に入射した光線11は、レジスト511及び基板510を透過する。 Subsequently, the mechanism by which the exposure unevenness occurs will be described with reference to FIG. 7. FIG. 7 shows how the resist 511 coated on the substrate 510 is irradiated with the exposure light. The light beam 10 incident on the resist 511 from the space above the base 521 passes through the resist 511 and the substrate 510 and is reflected on the upper surface 521A of the base 521. The light rays 12 incident on the resist 511 from the space above the substrate elevating mechanism 522 pass through the resist 511 and the substrate 510 and are reflected by the upper part of the substrate elevating mechanism 522. On the other hand, the light ray 11 incident on the resist 511 from the upper part of the gap between the base 521 and the substrate elevating mechanism 522 passes through the resist 511 and the substrate 510.

ここで、レジスト511に入射した露光光の一部はレジスト511によって吸収される。露光光の波長やレジスト511の光学特性に応じて、光の吸収率や透過率は異なる。レジストに対する露光光の透過率は以下のように求められる。 Here, a part of the exposure light incident on the resist 511 is absorbed by the resist 511. The light absorption rate and transmittance differ depending on the wavelength of the exposure light and the optical characteristics of the resist 511. The transmittance of the exposure light with respect to the resist is determined as follows.

まず、光をZ方向に伝搬する1次元の平面波とすると、時刻tにおける平面波の振幅E(Z,t)は、 First, assuming that light is a one-dimensional plane wave propagating in the Z direction, the amplitude E (Z, t) of the plane wave at time t is

Figure 0007016825000001
Figure 0007016825000001

と表される。kは波数、ωは振動数である。複素屈折率Nを用いると、振動数ωは、 It is expressed as. k is the wave number and ω is the frequency. Using the complex index of refraction N, the frequency ω is

Figure 0007016825000002
Figure 0007016825000002

と表され、振幅E(Z,t)は、以下のように表現することができる。 The amplitude E (Z, t) can be expressed as follows.

Figure 0007016825000003
Figure 0007016825000003

さらに、ω=2πc/λより Furthermore, from ω = 2πc / λ

Figure 0007016825000004
Figure 0007016825000004

となる。 Will be.

また、光のエネルギーI(Z,t)は振幅E(Z,t)の2乗のノルムまたは振幅E(Z,t)のノルムの2乗から求められるため、 Further, since the energy I (Z, t) of light is obtained from the squared norm of the amplitude E (Z, t) or the square of the norm of the amplitude E (Z, t),

Figure 0007016825000005
Figure 0007016825000005

と表される。 It is expressed as.

ここから、光の透過率Tを計算すると、 From here, when the light transmittance T is calculated,

Figure 0007016825000006
Figure 0007016825000006

となる。 Will be.

このようにして算出される透過率Tに従ってレジスト511を透過した光線は、基板510を透過して基台521や基板昇降機構522の上部に到達する。図7は、特定のレジストにおける光の波長と透過率の関係を示す図である。水銀ランプを用いた露光装置では、露光光としてi線(波長約365nm)やh線(波長約405nm)、g線(波長約436nm)等が用いられる。図8において、i線に対する透過率をTi、h線に対する透過率をTh、g線に対する透過率をTgと表記している。波長ごとに透過率の値が異なることがわかる。 The light rays transmitted through the resist 511 according to the transmittance T calculated in this way pass through the substrate 510 and reach the upper part of the base 521 and the substrate elevating mechanism 522. FIG. 7 is a diagram showing the relationship between the wavelength of light and the transmittance in a specific resist. In an exposure apparatus using a mercury lamp, i-line (wavelength of about 365 nm), h-line (wavelength of about 405 nm), g-line (wavelength of about 436 nm) and the like are used as exposure light. In FIG. 8, the transmittance for the i-line is expressed as Ti, the transmittance for the h-line is expressed as Th, and the transmittance for the g-line is expressed as Tg. It can be seen that the transmittance value differs for each wavelength.

基台521や基板昇降機構522の上部に到達した光は、反射面において正反射及び拡散反射により反射される。正反射は、反射面に入射する光の角度により反射角が決定される反射であり、一般的に光の入射角と反射角は等しくなる。拡散反射は、反射面に入射した光の入射角に依存しない反射であり、反射面の垂線から角度θで反射する光の強度がcosθに依存する。拡散反射はランバート反射とも呼ばれる。 The light that reaches the upper part of the base 521 and the substrate elevating mechanism 522 is reflected by specular reflection and diffuse reflection on the reflecting surface. Normal reflection is a reflection whose reflection angle is determined by the angle of light incident on the reflecting surface, and the incident angle and reflection angle of light are generally equal to each other. Diffuse reflection is reflection that does not depend on the incident angle of the light incident on the reflecting surface, and the intensity of the light reflected from the perpendicular line of the reflecting surface at an angle θ depends on cos θ. Diffuse reflection is also called Lambertian reflection.

基台521や基板昇降機構522の上面で正反射または拡散反射した光は、基板510を透過した後にフレア光としてレジスト511に入射する。一方、図7に光線11として示した光は、基台521と基板昇降機構522との間の隙間に入射し、その大部分はレジスト511へ再度入射することなく減衰する。 The light that is specularly or diffusely reflected on the upper surface of the base 521 or the substrate elevating mechanism 522 passes through the substrate 510 and then is incident on the resist 511 as flare light. On the other hand, the light shown as the light beam 11 in FIG. 7 is incident on the gap between the base 521 and the substrate elevating mechanism 522, and most of the light is attenuated without being incident on the resist 511 again.

以上のように、基板510上には、フレア光が多く発生する領域とフレア光がほとんど発生しない領域が生じることになる。上述したように、フレア光は、基台521や基板昇降機構522の上面の反射特性に応じて発生するものであり、フレア光を十分に低減させることは困難である。基板510上の領域ごとに応じてレジスト511に入射するフレア光の光量が異なるため、結果として露光ムラが発生してしまう。 As described above, a region where a large amount of flare light is generated and a region where flare light is hardly generated are generated on the substrate 510. As described above, the flare light is generated according to the reflection characteristics of the upper surface of the base 521 and the substrate elevating mechanism 522, and it is difficult to sufficiently reduce the flare light. Since the amount of flare light incident on the resist 511 differs depending on the region on the substrate 510, exposure unevenness occurs as a result.

(露光ムラの低減方法について)
次に、図9乃至11を用いて露光ムラを低減させる方法について説明する。図9において基台521と基板昇降機構522との間の隙間に反射部材523を設けることで、上述した露光ムラを低減させている。なお、図9における反射部材523以外の構成は、図2で示した構成と同一であるため説明を省略する。反射部材523は、アクリルやテフロン(登録商標)等の樹脂材料やアルミニウム等の金属材料から構成される。また、金属材料にメッキ等の表面処理を施した部材であっても良い。
(About the method of reducing exposure unevenness)
Next, a method of reducing exposure unevenness will be described with reference to FIGS. 9 to 11. In FIG. 9, the reflection member 523 is provided in the gap between the base 521 and the substrate elevating mechanism 522 to reduce the above-mentioned exposure unevenness. Since the configurations other than the reflective member 523 in FIG. 9 are the same as the configurations shown in FIG. 2, the description thereof will be omitted. The reflective member 523 is made of a resin material such as acrylic or Teflon (registered trademark) or a metal material such as aluminum. Further, the member may be a member obtained by subjecting a metal material to a surface treatment such as plating.

反射部材523の配置としては、基台521または基板昇降機構522の上面と同じ高さに配置することが好ましい。しかしながら、一般的に基台521の上面と基板昇降機構522の上面との間の隙間は非常に狭いため、この隙間に反射部材523を配置することは困難である。それゆえ、基板昇降機構522の接触部522Cよりも下の領域に反射部材523を配置している。 As for the arrangement of the reflective member 523, it is preferable to arrange the reflective member 523 at the same height as the upper surface of the base 521 or the substrate elevating mechanism 522. However, in general, the gap between the upper surface of the base 521 and the upper surface of the substrate elevating mechanism 522 is very narrow, and it is difficult to arrange the reflective member 523 in this gap. Therefore, the reflective member 523 is arranged in the region below the contact portion 522C of the substrate elevating mechanism 522.

続いて、図10を用いて露光ムラが低減されるメカニズムについて説明する。光線10及び光線12の光路に関しては、図7で示した通りであるため、ここでは説明を省略する。光線11は、レジスト511及び基板510を透過して、反射部材523の上面523Aに到達し、上面523Aにおいて基板側に反射される。 Subsequently, a mechanism for reducing exposure unevenness will be described with reference to FIG. Since the optical paths of the light rays 10 and the light rays 12 are as shown in FIG. 7, the description thereof will be omitted here. The light ray 11 passes through the resist 511 and the substrate 510, reaches the upper surface 523A of the reflective member 523, and is reflected to the substrate side on the upper surface 523A.

反射部材523の上面523Aは拡散反射面となっており、反射光のうち光線41は、その反射角が小さいため、基台521と基板昇降機構522との間の隙間を通過して、基板510を透過した後にレジスト511に到達する。一方、反射光のうち光線42は、上面523Aの垂線からの反射角が大きいため、基台521や基板昇降機構522の側面に照射され、その大部分が吸収される。その結果、光線42の大部分はレジスト511に到達しない。 The upper surface 523A of the reflective member 523 is a diffuse reflection surface, and the light ray 41 of the reflected light has a small reflection angle, so that it passes through the gap between the base 521 and the substrate elevating mechanism 522 and the substrate 510. Reach the resist 511 after passing through. On the other hand, among the reflected light, the light ray 42 has a large reflection angle from the perpendicular line of the upper surface 523A, so that it irradiates the side surface of the base 521 and the substrate elevating mechanism 522, and most of the reflected light is absorbed. As a result, most of the light rays 42 do not reach the resist 511.

以上説明したように、基台521と基板昇降機構522との間の隙間に反射部材523を設けることで、当該隙間の上部に位置するレジスト511に対してもフレア光が入射することになる。これにより、基台521によって反射されて基台521の上部の第1レジスト領域に到達する光量と、反射部材523によって反射されて反射部材523の上部の第2レジスト領域に到達する光量との差が小さくなる。また、基板昇降機構522によって反射されて基板昇降機構522の上部の第3レジスト領域に到達する光量と、反射部材523によって反射されて反射部材523の上部の第2レジスト領域に到達する光量との差が小さくなる。 As described above, by providing the reflective member 523 in the gap between the base 521 and the substrate elevating mechanism 522, flare light is incident on the resist 511 located at the upper part of the gap. As a result, the difference between the amount of light reflected by the base 521 and reaching the first resist region on the upper part of the base 521 and the amount of light reflected by the reflecting member 523 and reaching the second resist region on the upper part of the reflecting member 523. Becomes smaller. Further, the amount of light reflected by the substrate elevating mechanism 522 and reaching the third resist region on the upper part of the substrate elevating mechanism 522 and the amount of light reflected by the reflective member 523 and reaching the second resist region on the upper part of the reflective member 523. The difference becomes smaller.

結果として、レジスト511に照射されるフレア光の光量分布をある程度均一にすることができる。なお、第1レジスト領域は、図9において511Aと例示される領域であり、第2レジスト領域は、図9において511Bと例示される領域であり、第3レジスト領域は、図9において511Cと例示される領域である。 As a result, the light amount distribution of the flare light applied to the resist 511 can be made uniform to some extent. The first resist region is exemplified as 511A in FIG. 9, the second resist region is exemplified as 511B in FIG. 9, and the third resist region is exemplified as 511C in FIG. This is the area to be resisted.

しかしながら、上述したように、反射部材523に入射した露光光の全てがレジスト511に到達するわけではないため、露光ムラをさらに低減させるためには、更なる工夫が求められる。 However, as described above, not all the exposure light incident on the reflection member 523 reaches the resist 511, so further ingenuity is required to further reduce the exposure unevenness.

本発明においては、基台521、基板昇降機構522及び反射部材523の各反射面における反射率等の反射特性を適切に設定することで、露光ムラの更なる低減を実現させている。以下、反射特性の決定方法について説明する。 In the present invention, the reflection unevenness is further reduced by appropriately setting the reflection characteristics such as the reflectance on each reflection surface of the base 521, the substrate elevating mechanism 522, and the reflection member 523. Hereinafter, a method for determining the reflection characteristics will be described.

上述したように、反射面の形状によって入射光の反射特性が変化する。反射面の形状因子をk(0<k<1)、反射面を構成する物質の反射率をRとすると、反射面において反射された後にレジスト511に到達する光量はkRなる因子で表現することができる。形状因子kは、反射部材523のZ軸方向の位置や基台521と基板昇降機構522との間の隙間の幅w等をパラメータとして有し、光線解析や光学シミュレーションにより決定される。 As described above, the reflection characteristics of the incident light change depending on the shape of the reflecting surface. Assuming that the shape factor of the reflecting surface is k (0 <k <1) and the reflectance of the substance constituting the reflecting surface is R, the amount of light that reaches the resist 511 after being reflected by the reflecting surface is expressed by a factor of kR. Can be done. The shape factor k has parameters such as the position of the reflective member 523 in the Z-axis direction and the width w of the gap between the base 521 and the substrate elevating mechanism 522, and is determined by ray analysis or optical simulation.

図11は、反射部材523のZ軸方向の位置と形状因子kとの関係を示した図である。図11の横軸は、基台521の上面521Aから反射部材523の上面523AまでのZ軸方向の距離dを示しており、d=0のときは、基台521の上面521Aの高さと反射部材523の上面523Aの高さが等しいことを示す。また、基台521と基板昇降機構522との間の隙間の幅wに応じて形状因子kが変化することが示されている。ここで、w1>w2の関係にあり、当該幅wが大きいほど形状因子kが大きくなることがわかる。また、反射部材523の位置が基台521の上面521Aから離れるほど形状因子kが小さくなることがわかる。 FIG. 11 is a diagram showing the relationship between the position of the reflective member 523 in the Z-axis direction and the shape factor k. The horizontal axis of FIG. 11 indicates the distance d in the Z-axis direction from the upper surface 521A of the base 521 to the upper surface 523A of the reflective member 523, and when d = 0, the height and reflection of the upper surface 521A of the base 521. It shows that the heights of the upper surfaces 523A of the member 523 are equal. Further, it is shown that the shape factor k changes according to the width w of the gap between the base 521 and the substrate elevating mechanism 522. Here, it can be seen that there is a relationship of w1> w2, and the larger the width w, the larger the shape factor k. Further, it can be seen that the shape factor k becomes smaller as the position of the reflective member 523 is farther from the upper surface 521A of the base 521.

なお、正反射率は反射面に入射した光の光量に対する正反射光の光量の比の百分率で定義される。また、拡散反射率は、拡散反射面に入射した光の光量に対する正反射光を除いた全方位の拡散反射光の光量の比の百分率で定義される。また、正反射光に対する形状因子kと拡散反射光に対する形状因子kをそれぞれ定義することができる。 The specular reflectance is defined as a percentage of the ratio of the amount of specularly reflected light to the amount of light incident on the reflecting surface. Further, the diffuse reflectance is defined as a percentage of the ratio of the amount of diffusely reflected light in all directions excluding the positively reflected light to the amount of light incident on the diffusely reflected surface. Further, the shape factor k for the specular reflected light and the shape factor k for the diffuse reflected light can be defined respectively.

フレア光の光量は、上述した因子kRに対してレジスト511の透過率Tを掛け合わせた係数TkRに依存する。理想的には、基台521、基板昇降機構522及び反射部材523のそれぞれにおけるkRを等しくすることで、レジスト511上の各領域におけるTkRが等しくなる。これにより、レジスト511の領域ごとの露光量のムラが小さくなり、結果として露光ムラを低減させることができる。 The amount of flare light depends on the coefficient TkR obtained by multiplying the above-mentioned factor kR by the transmittance T of the resist 511. Ideally, by making the kRs of the base 521, the substrate elevating mechanism 522, and the reflective member 523 equal to each other, the TkRs in each region on the resist 511 become equal. As a result, the unevenness of the exposure amount for each region of the resist 511 is reduced, and as a result, the unevenness of exposure can be reduced.

正反射率をR、拡散反射率をR´、正反射率に関する形状因子をk、拡散反射率に関する形状因子をk´として、下記式(1)及び(2)の少なくとも一方を満足するように、反射部材523の形状因子kを調整する。 The regular reflectance is R, the diffuse reflectance is R', the shape factor related to the regular reflectance is k, and the shape factor related to the diffuse reflectance is k', so that at least one of the following equations (1) and (2) is satisfied. , The shape factor k of the reflective member 523 is adjusted.

Figure 0007016825000007
Figure 0007016825000007

式(1)及び(2)において、添え字S、C、lは、それぞれ反射部材523、基台521、基板昇降機構522のパラメータであることを示している。また、添え字λは、各パラメータに波長依存があることを示しており、露光光が複数の波長成分を含む場合には、波長ごとに各パラメータに関する値を足し合わせることを表している。 In the equations (1) and (2), the subscripts S, C, and l indicate that they are the parameters of the reflective member 523, the base 521, and the substrate elevating mechanism 522, respectively. Further, the subscript λ indicates that each parameter has a wavelength dependence, and when the exposure light contains a plurality of wavelength components, it indicates that the values related to each parameter are added for each wavelength.

上記の不等式(1)や(2)を満足するように、形状因子や反射率を調整することにより、露光ムラを良好に低減させることが可能となる。本願発明者による検証によれば、本発明における反射部材523を用いない場合には、上記不等式(1)、(2)の左辺の数値は1.5%から2.0%程度となることがわかっている。 By adjusting the scherrer equation and the reflectance so as to satisfy the above-mentioned inequalities (1) and (2), it is possible to satisfactorily reduce the exposure unevenness. According to the verification by the inventor of the present invention, when the reflective member 523 in the present invention is not used, the numerical values on the left side of the above inequalities (1) and (2) may be about 1.5% to 2.0%. know.

なお、本実施形態においては、基台521と基板昇降機構522との間の隙間に反射部材523を配置する実施例について説明したが、図3乃至6で示したように、基板保持部同士の間の隙間に反射部材523を配置する構成としても良い。基板保持部同士の間に基板昇降機構522が配置されていない場合であっても、基板保持部同士の間に隙間が生じていれば、これまでに説明した課題と同様の課題が生じ得るからである。 In this embodiment, an embodiment in which the reflective member 523 is arranged in the gap between the base 521 and the substrate elevating mechanism 522 has been described, but as shown in FIGS. 3 to 6, the substrate holding portions are connected to each other. The reflective member 523 may be arranged in the gap between the two. Even if the board elevating mechanism 522 is not arranged between the board holding portions, if there is a gap between the board holding portions, the same problems as those described above may occur. Is.

続いて、基台521、基板昇降機構522及び反射部材523を構成する材料の具体例について説明する。基台521は黒色のセラミックから形成され、基板昇降機構522は黒色の樹脂材料から形成される。また反射部材523はテフロン(登録商標)から形成される。 Subsequently, specific examples of the materials constituting the base 521, the substrate elevating mechanism 522, and the reflective member 523 will be described. The base 521 is made of black ceramic, and the substrate elevating mechanism 522 is made of black resin material. Further, the reflective member 523 is formed of Teflon (registered trademark).

図12(A)、(B)はそれぞれ、黒色のセラミックから構成される基台521の上面521Aにおける拡散反射率及び正反射率を示している。図13(A)、(B)はそれぞれ、黒色の樹脂材料から構成される基板昇降機構522の上面522Aにおける拡散反射率及び正反射率を示している。図14(A)、(B)はそれぞれ、テフロン(登録商標)から構成される反射部材523の上面523Aにおける拡散反射率及び正反射率を示している。 12 (A) and 12 (B) show the diffuse reflectance and the specular reflectance on the upper surface 521A of the base 521 made of black ceramic, respectively. 13 (A) and 13 (B) show the diffuse reflectance and the specular reflectance on the upper surface 522A of the substrate elevating mechanism 522 made of a black resin material, respectively. 14 (A) and 14 (B) show the diffuse reflectance and the specular reflectance on the upper surface 523A of the reflective member 523 made of Teflon (registered trademark), respectively.

上述したように、反射部材523の上面は、基台521の上面や基板昇降機構522の上面よりも下方に配置されるため、反射部材523の形状因子ks、ks´は基台521や基板昇降機構522の形状因子よりも小さくなる。そのため、反射部材523の材料として比較的反射率の高い材料を用いることで、反射部材523の因子kRと基台521や基板昇降機構522の因子kRとの差分を低減している。これにより露光ムラを低減させることができる。 As described above, since the upper surface of the reflective member 523 is arranged below the upper surface of the base 521 and the upper surface of the substrate elevating mechanism 522, the shape factors ks and ks'of the reflective member 523 are the base 521 and the substrate elevating mechanism 522. It is smaller than the shape factor of mechanism 522. Therefore, by using a material having a relatively high reflectance as the material of the reflective member 523, the difference between the factor kR of the reflective member 523 and the factor kR of the base 521 and the substrate elevating mechanism 522 is reduced. This makes it possible to reduce exposure unevenness.

例えば露光光の波長領域が350nmから450nmの間である投影露光装置では、当該波長領域において基台521、基板昇降機構522及び反射部材523の各上面における反射率の変化が小さいことが好ましい。反射率の変化が大きい場合には、露光光としてi線(波長約365nm)を用いたときの露光量分布と、露光光としてg線(波長約436nm)を用いたときの露光量分布が大きく変化してしまうおそれがある。これは、露光光の波長に応じて露光ムラの大きさが変化してしまうことを示しており、露光ムラの低減という観点からは好ましくない。 For example, in a projection exposure apparatus in which the wavelength region of the exposure light is between 350 nm and 450 nm, it is preferable that the change in reflectance on each upper surface of the base 521, the substrate elevating mechanism 522, and the reflective member 523 is small in the wavelength region. When the change in reflectance is large, the exposure amount distribution when i-line (wavelength about 365 nm) is used as the exposure light and the exposure amount distribution when g-line (wavelength about 436 nm) is used as the exposure light are large. It may change. This indicates that the magnitude of the exposure unevenness changes according to the wavelength of the exposure light, which is not preferable from the viewpoint of reducing the exposure unevenness.

基台521、基板昇降機構522及び反射部材523の材料として、上記波長領域における反射率の変化が小さいものを用いることで、各部材の上面における反射率の変化を小さくすることができる。 By using materials for the base 521, the substrate elevating mechanism 522, and the reflective member 523, which have a small change in reflectance in the wavelength region, the change in reflectance on the upper surface of each member can be reduced.

なお、基台521、基板昇降機構522及び反射部材523を構成する材料は図12乃至14に示したものに限らない。例えば、基台521としてブラックアルマイト処理を施したアルミニウムやDLC(Diamond-Like Carbon)コーティングを施した金属部材を用いても良い。また、基板昇降機構522や反射部材523としてアクリル等の樹脂材料を用いても良いし、各種コーティングを施した金属材料を用いても良い。 The materials constituting the base 521, the substrate elevating mechanism 522, and the reflective member 523 are not limited to those shown in FIGS. 12 to 14. For example, as the base 521, aluminum subjected to black alumite treatment or a metal member coated with DLC (Diamond-Like Carbon) may be used. Further, a resin material such as acrylic may be used as the substrate elevating mechanism 522 and the reflective member 523, or a metal material having various coatings may be used.

(反射部材の位置調整について)
反射部材523のZ軸方向の位置を調整する位置調整機構を設けることが好ましい。基台521、基板昇降機構522及び反射部材523の反射率は、主として材料の物性値によって決定されるが、製造誤差等に応じて反射率にばらつきが生じ得る。また、レジストの特性や露光光の波長、露光時のプロセスによっても反射率にばらつきが生じ得る。
(Regarding the position adjustment of the reflective member)
It is preferable to provide a position adjusting mechanism for adjusting the position of the reflective member 523 in the Z-axis direction. The reflectance of the base 521, the substrate elevating mechanism 522, and the reflective member 523 is mainly determined by the physical property values of the material, but the reflectance may vary depending on manufacturing errors and the like. In addition, the reflectance may vary depending on the characteristics of the resist, the wavelength of the exposure light, and the process at the time of exposure.

反射部材523をZ軸方向に駆動させることで、これらの反射率のばらつきによって生じ得る露光ムラを低減させることができる。反射部材523をZ軸方向に駆動させることで形状因子kが変化するため、上述した不等式(1)、(2)の左辺の値を適宜変動させることで露光ムラを低減させることが可能である。 By driving the reflective member 523 in the Z-axis direction, it is possible to reduce the exposure unevenness that may occur due to the variation in the reflectance. Since the shape factor k changes by driving the reflective member 523 in the Z-axis direction, it is possible to reduce the exposure unevenness by appropriately changing the values on the left side of the above-mentioned inequality equations (1) and (2). ..

図15を用いて位置調整機構を含む基板保持装置の詳細について説明する。図15は、図9の一部を抽出して反射部材523の位置調整機構524等の構成を説明するための図である。図15に示すように、反射部材523は、基台521及び基板昇降機構522から離間して配置されている。反射部材523は位置調整機構524により駆動され、Z軸方向に移動可能である。 The details of the substrate holding device including the position adjusting mechanism will be described with reference to FIG. FIG. 15 is a diagram for extracting a part of FIG. 9 to explain the configuration of the position adjusting mechanism 524 and the like of the reflective member 523. As shown in FIG. 15, the reflective member 523 is arranged apart from the base 521 and the substrate elevating mechanism 522. The reflective member 523 is driven by the position adjusting mechanism 524 and can move in the Z-axis direction.

基台521及び位置調整機構524は、X軸方向とY軸方向とに移動可能な可動ステージ(不図示)上の天板525の上部に取り付けられている。基板昇降機構522を構成する昇降部522Bは天板525を貫いており、昇降部522Bは、不図示のアクチュエータによりガイド526に沿ってZ軸方向に駆動される。また、位置調整機構524は、天板525に設けられた不図示のアクチュエータによりZ軸方向に駆動される。 The base 521 and the position adjusting mechanism 524 are attached to the upper part of the top plate 525 on a movable stage (not shown) that can move in the X-axis direction and the Y-axis direction. The elevating part 522B constituting the board elevating mechanism 522 penetrates the top plate 525, and the elevating part 522B is driven in the Z-axis direction along the guide 526 by an actuator (not shown). Further, the position adjusting mechanism 524 is driven in the Z-axis direction by an actuator (not shown) provided on the top plate 525.

(その他の変形例)
上述した実施例においては、本発明に係る基板保持装置を露光装置1としてのスキャナーに適用した例について説明をした。その他、例えば、原版310を固定して原版310のパターンを基板510に投影するステッパーに対しても本発明の基板保持装置を適用することができる。
(Other variants)
In the above-described embodiment, an example in which the substrate holding device according to the present invention is applied to a scanner as an exposure device 1 has been described. In addition, for example, the substrate holding device of the present invention can be applied to a stepper in which the original plate 310 is fixed and the pattern of the original plate 310 is projected onto the substrate 510.

(物品の製造方法)
次に、前述の露光装置を用いた物品(半導体集積回路素子、液晶表示素子等)の製造方法を説明する。物品の製造方法としては、本発明に係る基板保持装置を用いて保持された基板に対して露光光を照射してパターンを形成する工程と、パターンが形成された基板を加工(現像、エッチングなど)する工程が行われる。本発明に係る基板保持装置を用いることで、露光ムラを効果的に低減させることが可能となり、結果として基板上のパターン形成精度を向上させることができる。
(Manufacturing method of goods)
Next, a method of manufacturing an article (semiconductor integrated circuit element, liquid crystal display element, etc.) using the above-mentioned exposure apparatus will be described. The method for manufacturing an article includes a step of irradiating a substrate held by the substrate holding device according to the present invention with exposure light to form a pattern, and processing (development, etching, etc.) the substrate on which the pattern is formed. ) Is performed. By using the substrate holding device according to the present invention, it is possible to effectively reduce the exposure unevenness, and as a result, the pattern formation accuracy on the substrate can be improved.

本物品の製造方法は、従来に比べて、物品の性能、品質、生産性及び生産コストの少なくとも1つにおいて有利である。または、前述の露光装置は、高品位なデバイス(半導体集積回路素子、液晶表示素子等)などの物品を提供することができる。 The method for producing the present article is advantageous in at least one of the performance, quality, productivity and production cost of the article as compared with the conventional method. Alternatively, the above-mentioned exposure apparatus can provide an article such as a high-quality device (semiconductor integrated circuit element, liquid crystal display element, etc.).

以上、本発明の好ましい実施形態について説明したが、本発明はこれらの実施形態に限定されないことはいうまでもなく、その要旨の範囲内で種々の変形及び変更が可能である。 Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and modifications can be made within the scope of the gist thereof.

510 基板
521 基台
523 反射部材
510 Substrate 521 Base 523 Reflective member

Claims (19)

基板を保持する基台と、
前記基板を昇降させる昇降機構と、
前記基台と前記昇降機構との間の隙間に設けられ、前記基板を透過した光を反射する反射部材と、を有し、
前記基板を透過した光に対する前記反射部材の反射率は、前記基板を透過した光に対する前記基台の反射率よりも高く、
前記反射部材は、前記基板を透過した光が前記基台により反射され、前記基板における前記基台の上部に対応する領域に到達する光量と、前記基板を透過した光が前記反射部材により反射され、前記隙間の上部に対応する領域に到達する光量と、の差が小さくなるように設けられていることを特徴とする基板保持装置。
The base that holds the board and
An elevating mechanism that elevates and lowers the board,
It has a reflective member provided in the gap between the base and the elevating mechanism and reflecting light transmitted through the substrate.
The reflectance of the reflective member with respect to the light transmitted through the substrate is higher than the reflectance of the base with respect to the light transmitted through the substrate.
In the reflective member, the light transmitted through the substrate is reflected by the base, the amount of light reaching the region corresponding to the upper portion of the base on the substrate, and the light transmitted through the substrate are reflected by the reflective member. The substrate holding device is provided so that the difference between the amount of light reaching the region corresponding to the upper part of the gap and the amount of light reaching the region is small.
前記基板上には感光材が塗布されており、
前記基台によって反射されて前記基台の上部の第1レジスト領域に到達する光量と、前記反射部材によって反射されて前記隙間の上部の第2レジスト領域に到達する光量との差が小さくなるように、前記反射部材が設けられていることを特徴とする請求項1に記載の基板保持装置。
A photosensitive material is applied on the substrate, and the substrate is coated with a photosensitive material.
The difference between the amount of light reflected by the base and reaching the first resist region on the upper part of the base and the amount of light reflected by the reflecting member and reaching the second resist region on the upper part of the gap is small. The substrate holding device according to claim 1, wherein the reflective member is provided.
前記基板を透過した光に対する前記反射部材の拡散反射率は、前記基板を透過した光に対する前記基台の拡散反射率よりも高いことを特徴とする請求項1または2に記載の基板保持装置。 The substrate holding device according to claim 1 or 2 , wherein the diffuse reflectance of the reflecting member with respect to the light transmitted through the substrate is higher than the diffuse reflectance of the base with respect to the light transmitted through the substrate. 前記基板を透過した光に対する前記反射部材の正反射率は、前記基板を透過した光に対する前記基台の正反射率よりも高いことを特徴とする請求項1乃至3のいずれか1項に記載の基板保持装置。 The invention according to any one of claims 1 to 3 , wherein the specular reflectance of the reflecting member with respect to the light transmitted through the substrate is higher than the specular reflectance of the base with respect to the light transmitted through the substrate. Board holding device. 前記反射部材は、前記基板を透過した光が前記反射部材により反射され、前記隙間の上部に対応する領域に到達する光量と、前記基板を透過した光が前記昇降機構により反射され、前記基板における前記昇降機構の上部に対応する領域に到達する光量と、の差が小さくなるように設けられていることを特徴とする請求項1乃至のいずれか1項に記載の基板保持装置。 In the reflective member, the amount of light transmitted through the substrate is reflected by the reflective member and reaches the region corresponding to the upper part of the gap, and the light transmitted through the substrate is reflected by the elevating mechanism in the substrate. The substrate holding device according to any one of claims 1 to 4 , wherein the substrate holding device is provided so that the difference between the amount of light reaching the region corresponding to the upper part of the elevating mechanism and the light amount is small. 前記基板上には感光材が塗布されており、
前記反射部材によって反射されて前記隙間の上部の第2レジスト領域に到達する光量と、前記昇降機構によって反射されて前記昇降機構の上部の第3レジスト領域に到達する光量との差が小さくなるように、前記反射部材が設けられていることを特徴とする請求項に記載の基板保持装置。
A photosensitive material is applied on the substrate, and the substrate is coated with a photosensitive material.
The difference between the amount of light reflected by the reflective member and reaching the second resist region above the gap and the amount of light reflected by the elevating mechanism and reaching the third resist region above the elevating mechanism is small. The substrate holding device according to claim 5 , wherein the reflective member is provided.
前記基板を透過した光に対する前記反射部材の反射率は、前記基板を透過した光に対する前記昇降機構の反射率よりも高いことを特徴とする請求項1乃至のいずれか1項に記載の基板保持装置。 The substrate according to any one of claims 1 to 6 , wherein the reflectance of the reflecting member with respect to the light transmitted through the substrate is higher than the reflectance of the elevating mechanism with respect to the light transmitted through the substrate. Holding device. 前記基板を透過した光に対する前記反射部材の拡散反射率は、前記基板を透過した光に対する前記昇降機構の拡散反射率よりも高いことを特徴とする請求項に記載の基板保持装置。 The substrate holding device according to claim 7 , wherein the diffuse reflectance of the reflecting member with respect to the light transmitted through the substrate is higher than the diffuse reflectance of the elevating mechanism with respect to the light transmitted through the substrate. 前記基板を透過した光に対する前記反射部材の正反射率は、前記基板を透過した光に対する前記昇降機構の正反射率よりも高いことを特徴とする請求項またはに記載の基板保持装置。 The substrate holding device according to claim 7 or 8 , wherein the specular reflectance of the reflecting member with respect to the light transmitted through the substrate is higher than the specular reflectance of the elevating mechanism with respect to the light transmitted through the substrate. 前記反射部材は、前記基板の各領域における受光量の差が小さくなるように設けられていることを特徴とする請求項1乃至のいずれか1項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 9 , wherein the reflective member is provided so that the difference in the amount of light received in each region of the substrate is small. 前記基台には前記昇降機構が配置されている貫通孔が設けられており、前記反射部材は前記貫通孔の内部に設けられていることを特徴とする請求項1乃至10のいずれか1項に記載の基板保持装置。 One of claims 1 to 10 , wherein the base is provided with a through hole in which the elevating mechanism is arranged, and the reflective member is provided inside the through hole. The board holding device according to. 前記反射部材は、アクリル、テフロン(登録商標)、アルミニウムのうち少なくとも1つを含む材料であることを特徴とする請求項1乃至11のいずれか1項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 11 , wherein the reflective member is a material containing at least one of acrylic, Teflon (registered trademark), and aluminum. 基板を保持する複数の基板保持部を含む基台と、
前記複数の基板保持部間の隙間に設けられ、前記基板を透過した光を反射する反射部材と、を有し、
前記反射部材は、アクリル、テフロン(登録商標)、アルミニウムのうち少なくとも1つを含む材料であり、
前記基板を透過した光に対する前記反射部材の反射率は、前記基板を透過した光に対する前記基台の反射率よりも高いことを特徴とする基板保持装置。
A base that includes multiple board holders that hold the board,
It has a reflective member provided in a gap between the plurality of substrate holding portions and reflecting light transmitted through the substrate.
The reflective member is a material containing at least one of acrylic, Teflon (registered trademark), and aluminum.
A substrate holding device characterized in that the reflectance of the reflecting member with respect to the light transmitted through the substrate is higher than the reflectance of the base with respect to the light transmitted through the substrate.
前記反射部材は、前記基台の上面よりも下方に設けられていることを特徴とする請求項1乃至13のいずれか1項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 13 , wherein the reflective member is provided below the upper surface of the base. 前記反射部材は鉛直方向に移動可能であることを特徴とする請求項1乃至14のいずれか1項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 14 , wherein the reflective member is movable in the vertical direction. 前記反射部材を鉛直方向に移動させる調整機構をさらに有することを特徴とする請求項15に記載の基板保持装置。 The substrate holding device according to claim 15 , further comprising an adjusting mechanism for moving the reflective member in the vertical direction. 前記基板は、サファイア基板又はガラス基板であることを特徴とする請求項1乃至16のいずれか1項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 16 , wherein the substrate is a sapphire substrate or a glass substrate. 露光光を用いて原版のパターンを基板に転写する露光装置であって、
露光光を透過する特性を有する基板を請求項1乃至17のいずれか1項に記載の基板保持装置によって保持した状態で、前記基板に対して前記原版のパターンを転写することを特徴とする露光装置。
An exposure device that transfers the pattern of the original plate to the substrate using exposure light.
An exposure characterized in that the pattern of the original plate is transferred to the substrate while the substrate having the property of transmitting exposure light is held by the substrate holding device according to any one of claims 1 to 17 . Device.
請求項18に記載の露光装置を用いて基板を露光する露光工程と、
前記露光工程で露光された前記基板を現像する現像工程と、を含み
前記現像工程で現像された前記基板から物品を製造することを特徴とする物品の製造方法。
An exposure step of exposing a substrate using the exposure apparatus according to claim 18 .
A development step of developing the substrate exposed in the exposure step is included .
A method for producing an article, which comprises producing an article from the substrate developed in the developing step.
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