JP6956598B2 - Separation method of semiconductor test equipment and semiconductor elements - Google Patents

Description

The present invention relates to a semiconductor test apparatus and a method for separating a semiconductor element, and more particularly to a semiconductor test apparatus for energizing a semiconductor element with a large DC current and a method for separating the semiconductor element for separating the semiconductor element from the semiconductor test apparatus. be.

Conventionally, in a semiconductor element for which a large current flows, the electrical characteristics have been evaluated in advance by energizing the semiconductor element with a large current. Semiconductor test equipment is used to evaluate electrical properties. Patent documents that disclose such a semiconductor test apparatus include, for example, Patent Document 1 and Patent Document 2.

In the semiconductor test apparatus disclosed in Patent Document 1, a pressure plate is directly placed on the semiconductor element, and a large current is passed through the semiconductor element while applying a downward pressing force to the semiconductor element by the pressure plate. .. Further, in the semiconductor test apparatus disclosed in Patent Document 2, a method of performing an energization test in a state where a material such as a laminated metal foil is sandwiched between a semiconductor element and a pressure plate has been proposed.

International Publication No. 2014/148294 Japanese Unexamined Patent Publication No. 2016-11862

In a semiconductor test apparatus, when testing a semiconductor element, a large current is passed through the semiconductor element. Therefore, in the semiconductor test apparatus disclosed in Patent Document 2, it is assumed that a material such as a laminated metal foil is welded to the semiconductor element and the pressure plate.

When the interstitial material and the semiconductor element or the like are welded together, for example, one of the interstitial material and the semiconductor element or the like is adsorbed, and in that state, the other is pulled by a human hand to separate the other from the other. There is a need. As described above, it takes time and effort to manually separate the semiconductor element from the semiconductor test apparatus, which is a factor that hinders the automation of the process.

The present invention has been made in view of such problems, and one object is to provide a semiconductor test apparatus capable of separating a semiconductor element from a semiconductor test apparatus without manpower. It is an object of the present invention to provide a method for separating a semiconductor element from the semiconductor test apparatus.

The semiconductor test apparatus according to the present invention has a pressurized energizing unit and a separating unit. The pressurizing and energizing unit conducts an electrical test on the semiconductor element while pressurizing the semiconductor element having the first main surface and the second main surface facing each other through the interstitial material. The separation unit separates the semiconductor element and the interstitial material. The separating portion includes a holding portion and a position changing portion. The holding part holds the interstitial material. The position changing portion changes the position of the holding portion while holding the interleaving material, and creates a gap between the interleaving material and the semiconductor element to separate the semiconductor element from the interleaving material.

In the method for separating a semiconductor element according to the present invention, in a semiconductor test apparatus, a semiconductor element having a first main surface and a second main surface facing each other is electrically tested while being pressurized through an interleaving material, and then the semiconductor element is electrically tested. This is a method for separating a semiconductor element from the interstitial material, and performs the following operations. As the interstitial material, the interstitial material on the first main surface side is arranged on the first main surface side of the semiconductor element. The first position in the first main surface side interleaving member is held, and the second position separated from the first position is held. While holding the first and second positions of the first main surface side interstitial material, the first main surface side interstitial material is deformed by shortening the distance, and between the first main surface side interstitial material and the semiconductor element. A gap is formed in the semiconductor element to separate the semiconductor element from the first main surface side interleaving material.

According to the semiconductor test apparatus according to the present invention, by changing the position of the holding portion while holding the interleaving material by the separating portion, a gap is generated between the interleaving material and the semiconductor element. As a result, the semiconductor element and the interstitial material can be separated without human intervention.

According to the method for separating semiconductor elements according to the present invention, the first main surface side interleaving material is deformed by reducing the distance between the first position and the second position holding the first main surface side interleaving material, respectively. , A gap is formed between the first main surface side interleaving material and the semiconductor element. As a result, the semiconductor element and the first main surface side interleaving member can be separated without human intervention.

It is a perspective view of the semiconductor test apparatus which concerns on Embodiment 1. FIG. In the same embodiment, it is a perspective view which shows an example of the semiconductor element which is the test object of the semiconductor test apparatus. In the same embodiment, it is a front view including a partial cross section which shows the pressurizing current part arranged in the semiconductor test apparatus. In the same embodiment, it is a perspective view which shows the separation part arranged in the semiconductor test apparatus. In the same embodiment, it is sectional drawing which shows one operation for demonstrating the operation by the semiconductor test apparatus. FIG. 5 is a cross-sectional view showing an operation performed after the operation shown in FIG. 5 in the same embodiment. It is sectional drawing which shows the operation performed after the operation shown in FIG. 6 in the same embodiment. It is sectional drawing which shows the operation performed after the operation shown in FIG. 7 in the same embodiment. In the same embodiment, it is a front view including a partial cross section which shows the operation performed after the operation shown in FIG. In the same embodiment, it is a front view including a partial cross section which shows the operation performed after the operation shown in FIG. In the same embodiment, it is a front view and a top view which show the operation performed after the operation shown in FIG. In the same embodiment, it is a front view and a top view which show the operation performed after the operation shown in FIG. In the same embodiment, it is a front view and a top view which show the operation performed after the operation shown in FIG. In the same embodiment, it is a front view which shows the mechanism including the claw part for performing the operation performed after the operation shown in FIG. In the same embodiment, it is a top view which shows an example of the shape of the 3rd interstitial material for explaining the operation by a claw part. In the same embodiment, it is a top view of the positioning guide including the third interstitial material and the semiconductor element for explaining the operation by the claw portion. It is a front view which shows the operation performed after the operation shown in FIG. 13 in the same embodiment. It is a front view which shows the operation performed after the operation shown in FIG. 17 in the same embodiment. It is a perspective view which shows the separation part in the semiconductor test apparatus which concerns on Embodiment 2. It is a top view which shows one operation for demonstrating the operation by the semiconductor test apparatus in the same embodiment. In the same embodiment, it is a front view which shows one operation for demonstrating the operation by the semiconductor test apparatus.

Embodiment 1.
An example of the semiconductor test apparatus according to the first embodiment will be described. The semiconductor test apparatus according to the embodiment is used to evaluate the electrical characteristics of a semiconductor element used in an application in which a large current is passed.

As shown in FIG. 1, the semiconductor test apparatus 1 includes a pressurized energization unit 3, an energization control unit 4, a transfer unit 5, a separation unit 6, and a recovery unit 7. The pressurized energization unit 3, the energization control unit 4, the transfer unit 5, the separation unit 6, and the recovery unit 7 are arranged on the base 2.

The pressurized energizing unit 3 includes a cooling plate 31, a positioning guide 32, a pressurized energizing probe 33, a pressure plate 34, and a precision servo press 35. The precision servo press 35 is supported by a support column 36. The energization control unit 4 includes a programmable logic controller 41, a graphic operation terminal 42, a press controller 43, an energization power supply 44, and a power supply controller 45.

The transfer unit 5 includes an X-direction transfer mechanism 51, a Y-direction transfer mechanism 52, a transfer base 53, and a Z-direction transfer mechanism 54. The separation unit 6 includes suction pads 61a, 61b, 61c, cylinders 62a, 62b, and an air tube 63. The recovery unit 7 includes a semiconductor element recovery tray 71 and an interstitial material recovery box 72.

As shown in FIG. 2, the semiconductor element 11 whose electrical characteristics are evaluated has a front surface 11a as a first main surface and a back surface 11b as a second main surface facing each other. A surface electrode 12 is arranged on the surface 11a. A back surface electrode 13 is arranged on the back surface 11b. When the semiconductor element 11 is, for example, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a source electrode and a gate electrode are arranged as surface electrodes 12. A drain electrode is arranged as the back surface electrode 13. The shape of the front electrode 12 and the shape of the back electrode 13 are merely examples, and are not limited to these shapes.

Next, the pressurized energization unit 3 will be specifically described. As shown in FIG. 3, the pressurized energizing unit 3 includes a cooling plate 31, a positioning guide 32, a first interstitial member 21 as a second interstitial material on the first main surface side, and a first interstitial material on the first main surface side. It is provided with a second interstitial material 23 as a second interstitial material, a third interstitial material 25 as a second main surface side interstitial material, a pressurized energizing probe 33, a pressure plate 34, and a precision servo press 35.

The cooling plate 31 is a plate-shaped member on which the semiconductor element 11 is placed. The cooling plate 31 has a rectangular planar shape. The cooling plate 31 is a member for cooling the semiconductor element 11 that has generated heat when performing an energization evaluation in the semiconductor test apparatus.

A convex portion 31a is provided in the center of the cooling plate 31. The cooling plate 31 is preferably made of a material having high thermal conductivity and conductivity, and is preferably formed of, for example, any material selected from the group consisting of aluminum, copper and carbon.

The positioning guide 32 is a member for determining the position of the semiconductor element 11 on the cooling plate 31. A hole 32a is provided in the center of the positioning guide 32. The convex portion 31a of the cooling plate 31 is fitted into the hole 32a. Further, the third interstitial material 25 and the semiconductor element 11 described later are fitted into the holes 32a. In this way, the positioning of the semiconductor element 11 on the cooling plate 31 is performed.

The material (material) of the positioning guide 32 may be any material having insulation, heat resistance, and wear resistance so as not to divert the energization to the semiconductor element 11. For example, a ceramic polymer material. Is preferable. Further, a metal material such as copper or aluminum coated with an insulating film may be applied. As the insulating film, for example, insulating tape, ceramic coating, glass coating and the like are preferable. By applying these materials, factors affecting the energization inspection process, such as current shunting, can be eliminated at low cost.

The first interstitial material 21 is arranged between the semiconductor element 11 and the pressurized energizing probe 33 described later. The first interstitial material 21 needs to have a function of evenly distributing the heat generated by energization of the semiconductor element 11 on the back surface and cooling the semiconductor element 11. Therefore, it is preferable that the size of the first interstitial material 21 is the same as the size of the semiconductor element 11 in a plan view.

The thickness of the first interstitial material 21 is preferably thick from the viewpoint of durability, but from the viewpoint of cooling performance, if the thickness is too thick, the cooling performance deteriorates. Therefore, it is preferable that the thickness is about the same as the thickness of the semiconductor element 11 or thinner than the thickness of the semiconductor element 11 so as not to be destroyed during the energization test.

Since the pressurized energizing probe 33 comes into contact with the first interstitial material 21, the surface roughness of the first interstitial material 21 is reduced in order to increase the contact area between the first interstitial material 21 and the pressurized energizing probe 33. Is preferable. The surface roughness of the first interstitial material 21 is preferably, for example, a flatness of about 10 μm. Further, the first interstitial material 21 has a role of absorbing the deviation of the parallelism between the bottom surface of the lowered pressurized energizing probe 33 and the semiconductor element 11.

In particular, when a plurality of pressurized energizing probes 33 are applied, the length of the pressurized energizing probe 33 may vary. In order to make the pressing force by the plurality of pressurized energizing probes 33 uniform, a desired thickness is required as the thickness of the first interstitial material 21. When the thickness of the first interstitial material 21 is thin, plastic deformation is likely to occur, and it becomes difficult to obtain a uniform pressing force. In addition, the semiconductor element 11 may be damaged. Further, when energization is performed, a current flows locally, and the back surface of the semiconductor element 11 is easily oxidized.

The second interstitial material 23 is arranged between the semiconductor element 11 and the pressurized energization probe 33, and in particular, is arranged between the semiconductor element 11 and the first interstitial material 21. The second interstitial material 23 comes into contact with the surface electrode 12 of the semiconductor element 11.

The size of the second interleaving material 23 may be a size that can cover the semiconductor element 11, but as will be described later, the second interleaving material 23 is deformed to form the semiconductor element 11 and the second interleaving material 23. In order to form a gap between the two, it is preferable that the size has a longitudinal direction and a lateral direction. The thickness of the second interstitial material 23 is required to be thick enough to absorb a step of about several μm of the surface electrode formed on the surface 11a of the semiconductor element 11. If the thickness of the second interstitial material 23 is too thin, the second interstitial material 23 may break during the energization test, and the energization test may not be possible.

On the other hand, if the thickness of the second interstitial material 23 is too thick, thermal expansion increases in the rolling direction due to heat generated during the pressurization and energization test. Therefore, a difference in thermal expansion occurs between the thermal expansion of the second interstitial material 23 and the thermal expansion of the semiconductor element 11, and the semiconductor element 11 is easily damaged. Further, since the rigidity of the second interstitial material 23 is increased, there is a possibility that a gap may be formed due to deformation corresponding to the surface shape of the semiconductor element 11 during the pressurization energization test. As a result, the heat dissipation property deteriorates, and the back surface 11b (see FIG. 2) of the semiconductor element 11 is easily oxidized.

The third interstitial material 25 is arranged between the convex portion 31a of the cooling plate 31 and the semiconductor element 11. The third interstitial material 25 comes into contact with the back surface electrode 13 of the semiconductor element 11. The third inter-material 25 electrically connects the back surface electrode 13 and the energizing power supply 44. The third interstitial material 25 is electrically connected to the positive electrode or the negative electrode of the energizing power supply 44 via the cooling plate 31. As the material (material) of the first interstitial material 21, the second interstitial material 23, and the third interstitial material 25, a material having high electrical conductivity, heat resistance, and abrasion resistance is preferable, and for example, copper. Aluminum or the like is preferable.

The pressurized energizing probe 33 is arranged directly above the first interstitial material 21. The pressurized energizing probe 33 is electrically connected to the energizing power supply 44. When the pressurized energizing probe 33 comes into contact with the first interstitial material 21, a large current is supplied to the semiconductor element 11. The pressurized energizing probe 33 has a cylindrical shape extending in the Z direction. The pressurized energizing probe 33 is fixed to the pressure plate 34. A precision servo press 35 is attached to the pressure plate 34. The precision servo press 35 moves the pressurized energizing probe 33 in the vertical direction (Z direction).

The material of the pressurized energizing probe 33 is preferably a material having high electrical conductivity, heat resistance, abrasion resistance, and load capacity, and for example, a conductive resin material containing a carbon filler or the like, brass, stainless steel, or the like is preferable. .. Further, the pressurized energizing probe 33 may be formed of, for example, carbon tool steel such as tungsten.

As the pressurized energizing probe 33, three pressurized energizing probes 33 are shown here, but if the load and current density per pressurizing energizing probe 33 can be withstood, one pressurized energizing probe 33 is shown. Pressurization and energization may be performed by the probe 33. Further, the pressure is not limited to three, and pressure may be applied by a plurality of pressure-energized probes 33.

As the material of the pressurizing plate 34, a material having high electrical conductivity, heat resistance and abrasion resistance is used for electrically connecting to the pressurized energizing probe 33 and cooling the generated pressurized energizing probe 33. Preferably, for example, copper or aluminum is preferable. Further, the pressure plate 34 may be formed of, for example, carbon tool steel.

Next, the transfer unit 5 will be specifically described. A cooling plate 31 and the like are arranged on the transport table 53. The Y-direction transfer mechanism transfers the transfer table 53, the semiconductor element 11, or the like in the Y direction. The transport table 53 can be moved to a position directly below the pressurized energization probe 33. The X-direction transfer mechanism 51 transfers the semiconductor element 11 and the like in the X direction. The Z-direction transfer mechanism 54 transfers the semiconductor element 11 and the like in the Z direction.

Next, the separation unit 6 will be specifically described. As shown in FIG. 4, the separating portion 6 has suction pads 61a, 61b, 61c as holding portions and cylinders 62a, 62b as position changing portions. The suction pad 61a sucks on the first interstitial material 21. The suction pad 61b sucks one end side of the second interstitial material 23. The suction pad 61c sucks the other end side of the second interstitial material 23.

An air tube 63 is connected to the suction pads 61a, 61b, 61c. The cylinder 62a is driven so that the distance between the suction pad 61b and the suction pad 61a can be changed. The cylinder 62b is driven so that the distance between the suction pad 61c and the suction pad 61a can be changed.

Next, the energization control unit 4 will be specifically described. The energization control unit 4 controls the drive of the transfer unit 5 and the energization of the pressurized energization unit 3. In the programmable logic controller 41, a series of programs for controlling the drive of the transfer unit 5, the energization of the pressurized energization unit 3, and the drive of the separation unit 6 are installed. The programmable logic controller 41 is operated through the graphic operation terminal 42. As the graphic operation terminal 42, for example, a graphic operation terminal manufactured by Mitsubishi Electric is used.

The energization control unit 4 has the following functions. The press controller 43 controls the drive of the precision servo press 35 of the pressurizing and energizing unit 3. The required power is supplied from the energized power supply 44. The power controller 45 controls the supply of electric power from the energized power supply 44.

By reading the conditions set in advance in the press controller 43 according to the instruction from the programmable logic controller 41, the precision servo press 35 is driven and the pressure plate 34 is lowered. As the pressure plate 34 descends, the pressure energizing probe 33 comes into contact with the first interstitial material 21. Next, according to the instruction from the programmable logic controller 41, the pressing force of the pressurized energizing probe 33 is increased to an arbitrarily set specified load value (25 kg to 100 kg).

Next, by reading the conditions set in advance in the power supply controller 45, an arbitrarily set current is flowed in the forward direction from the energized power supply 44 to the semiconductor element 11 via the first interstitial material 21 and the like. The current density is set to, for example, 120 A / cm ² or more and 400 A / cm ² or less. When passing an electric current, the temperature of the semiconductor element 11 is set to, for example, 150 ° C. or higher and 230 ° C. or lower.

A thermocouple (not shown) is attached to the convex portion 31a of the cooling plate 31. The temperature of the semiconductor element 11 during energization and pressurization is constantly measured by this thermocouple. When the measured temperature deviates from the specified temperature range (150 ° C or higher and 230 ° C or lower), the programmable logic controller 41 sends a signal to the press controller 43 and the power supply controller 45 to stop energization and pressurization. ..

When the current density deviates from the specified current range (120 A / cm ² or more and 400 A / cm ² or less), the power controller 45 determines that the semiconductor element 11 being pressurized and energized is a defective product. The result is transmitted to the programmable logic controller 41. A signal for stopping energization and pressurization is sent from the programmable logic controller 41 to the press controller 43 and the power supply controller 45. By stopping this energization and pressurization when an abnormality occurs, damage to the peripheral mechanism is suppressed. The semiconductor test apparatus according to the first embodiment is configured as described above.

Next, an example of the operation of the above-mentioned semiconductor test apparatus will be described. First, the operation of the pressurized energizing unit 3 will be described. As shown in FIG. 5, the positioning guide 32 is arranged in the cooling plate 31 in a manner in which the convex portion 31a of the cooling plate 31 is fitted into the hole 32a of the positioning guide 32. Next, the third interstitial member 25 is placed on the convex portion 31a located in the hole 32a.

Next, as shown in FIG. 6, the semiconductor element 11 is placed on the third interstitial material 25. Next, as shown in FIG. 7, the second interstitial member 23 is placed so as to cover the semiconductor element 11. Next, as shown in FIG. 8, the first interstitial material 21 is placed on the second interstitial material 23. Next, as shown in FIG. 9, the cooling plate 31 or the like on which the first interstitial material 21 is placed is arranged directly under the pressurized energizing probe 33. The cooling plate 31 and the like are placed on the transport table 53 (see FIG. 1).

Next, as shown in FIG. 10, the precision servo press 35 is driven by the signal from the energization control unit 4, the pressure plate 34 and the like are lowered, and the pressurization energization probe 33 is brought into contact with the first interstitial material 21. .. At this time, the pressing force of the pressurized energizing probe 33 is increased to a specified load value (25 kg to 100 kg). Further, the temperature of the semiconductor element 11 is set to, for example, 150 ° C. or higher and 230 ° C. or lower.

Next, a current is passed in the forward direction from the energized power supply 44 to the semiconductor element 11 via the first interstitial material 21 and the like. At this time, the current density is set to, for example, 120 A / cm ² or more and 400 A / cm ² or less.

When the temperature of the semiconductor element 11 deviates from the specified temperature range (150 ° C. or higher and 230 ° C. or lower), the pressurized energization is stopped. When the current density deviates from the specified current range (120 A / cm ² or more and 400 A / cm ² or less), it is determined that the semiconductor element 11 under energization and pressurization is a defective product, and the pressurization and energization is performed. It will be stopped.

In this test by pressurizing and energizing, the semiconductor element 11 and the second interstitial material 23 may be welded. The second interstitial material 23 and the first interstitial material 21 may be welded. The semiconductor element 11 and the third interstitial material 25 may be welded.

When the test of the semiconductor element 11 by the pressurized energizing unit 3 is completed, the cooling plate 31 or the like on which the semiconductor element 11 is mounted is placed at the position (Y direction) where the separating unit 6 is arranged by the Y-direction transfer mechanism 52 together with the transport table 53. ) (See Fig. 1). Next, the separation unit 6 is transported to the position (X direction) where the cooling plate 31 and the like are arranged by the X-direction transfer mechanism 51 (see FIG. 1).

Next, as shown in FIG. 11, the separation portion 6 is lowered by the Z-direction transfer mechanism 54 (see FIG. 1), and the suction pads 61a, 61b, 61c are attached to the first interstitial material 21 or the second interstitial material 23. Make contact. At this time, the suction pad 61a is brought into contact with the first interstitial material 21. The suction pad 61b is brought into contact with one end of the second interstitial material 23. The suction pad 61c is brought into contact with the other end of the second interstitial material 23. Next, suction by the suction pads 61a, 61b, 61c is started at the same time.

Next, as shown in FIG. 12, the distance (interval) between the suction pad 61a and the suction pad 61b is shortened by driving the cylinder 62a while maintaining the suction state by the suction pads 61a, 61b, 61c. By narrowing the distance between the suction pad 61a that sucks the first interstitial material 21 and the suction pad 61b that adsorbs one end of the second interstitial material 23, the second interstitial material 23 is deformed, and the second interstitial material 23 and the second interstitial material 23 are deformed. A gap is created between the semiconductor element 11 and the semiconductor element 11.

Next, as shown in FIG. 13, the distance (interval) between the suction pad 61a and the suction pad 61c is further shortened by further driving the cylinder 62b. By narrowing the distance between the suction pad 61a that sucks the first interstitial material 21 and the suction pad 61c that adsorbs the other end of the second interstitial material 23, the second interstitial material 23 is further deformed and the second interstitial material 23 is further deformed. The gap between the 23 and the semiconductor element 11 is further widened.

Next, from the state where a gap is formed between the second interstitial material 23 and the semiconductor element 11, for example, the side surface of the semiconductor element 11 is brought into contact with the positioning guide 32 to separate the semiconductor element 11 from the second interstitial material 23. Let me. The separated semiconductor element 11 falls on the cooling plate 31. The first interstitial material 21 and the second interstitial material 23 are conveyed in a state of being adsorbed by the suction pads 61a, 61b, 61c and collected in the interstitial material collection box 72.

The third interstitial material 25 may be welded to the semiconductor element 11 that has fallen onto the cooling plate 31. Next, as shown in FIG. 14, the third interstitial material 25 welded to the semiconductor element 11 is separated by the claw portions 69a and 69b. As shown in FIGS. 14 and 15, the third interstitial member 25 is provided with a protruding portion 25a that projects in the plane direction from the semiconductor element 11 in a state where the semiconductor element 11 is mounted.

As shown in FIG. 16, the positioning guide 32 is provided with a portion for exposing the protruding portion 25a in a state where the semiconductor element 11 is dropped (mounted) on the cooling plate 31. The third interstitial material 25 is separated from the semiconductor element 11 by hooking the claw portions 69a and 69b on the protruding portion 25a.

As shown in FIG. 17, the claw portion 69a is brought into contact with the protruding portion 25a on one end side of the third interleaving member 25, and the claw portion 69b is brought into contact with the protruding portion 25a on the other end side of the third interleaving member 25. Next, as shown in FIG. 18, the semiconductor element 11 is pulled upward in a state where the claw portions 69a and 69b are in contact with the protruding portions 25a. This can be done, for example, by sucking the suction pad 61a onto the semiconductor element 11.

The semiconductor element 11 separated from the third interstitial material 25 is collected in the semiconductor element recovery tray 71. On the other hand, the separated third interstitial material 25 is collected in the interstitial material collection box 72. In this way, a series of pressurized energization tests by the semiconductor test apparatus 1 are completed.

Since the semiconductor test apparatus 1 described above is provided with the separation unit 6, even when the second interstitial material 23 or the like is welded to the semiconductor element 11, it can be combined with the semiconductor element 11 without human intervention. The second interstitial material 23 and the like can be automatically separated. As a result, the time required for a series of pressurization and energization tests including the work of separating the semiconductor element 11 and the second interstitial material 23 and the like can be shortened, which can contribute to the enhancement of production capacity and labor saving. ..

Conventionally, when the semiconductor element 11 and the second interleaving material 23 or the like are welded together, the semiconductor element 11 and the second interleaving material 23 or the like are bonded to each other by using an adhesive tape having an adhesive strength equal to or higher than the adhesive strength at the time of welding. Separation was being done. Therefore, when the adhesive tape is used, a mechanism for cutting and discarding the used portion is required so that the new surface of the adhesive tape can be used. In addition, a roller or the like for taking out the new surface of the adhesive tape was required. In the semiconductor test apparatus 1 described above, the mechanism and the like are not required, and the running cost can be suppressed.

Further, an electric cylinder may be applied as the cylinders 62a and 62b of the separation unit 6 of the semiconductor test apparatus described above. In this case, the suction position by the suction pads 61a, 61b, 61c can be easily determined according to the size of the target work (semiconductor element 11 and the second interstitial material 23, etc.) that is suction-conveyed by the suction pads 61a, 61b, 61c. Can be changed. Therefore, it is not necessary to modify the suction portion in the separation portion 6 to correspond to the size of the target work. In addition, it is not necessary to mount another separation unit corresponding to the size of the target work. As a result, it is possible to save space and reduce the cost of the semiconductor test apparatus 1.

Further, the suction pad 61a, the suction pad 61b, and the suction pad 61c of the separation unit 6 may be arranged along the diagonal line of the rectangular second interstitial material 23 shown in FIG. 4, for example. That is, the Y-direction position of the suction pad 61b is arranged at a position on the negative side of the Y-direction position of the suction pad 61a, and the Y-direction position of the suction pad 61c is a position on the positive side of the Y-direction position of the suction pad 61a. May be placed in. In this case, when the cylinders 62a and 62b operate, a force in the twisting direction is applied to the second interleaving member 23, which makes it easy to create a gap between the semiconductor element 11 and the second interleaving member 23. can. As a result, the semiconductor element 11 and the second interstitial material 23 and the like can be reliably separated.

In the semiconductor test apparatus 1 described above, the case where both the cylinder 62a and the cylinder 62b are operated has been described. However, even if only one of the cylinder 62a and the cylinder 62b is operated, the semiconductor element 11 and the second interleaving material are used. It can be separated from the 23 mag.

Further, in the semiconductor test apparatus 1 described above, the case where the side surface of the semiconductor element 11 is brought into contact with the positioning guide 32 to separate the semiconductor element 11 from the second interstitial material 23 or the like has been described, but the semiconductor element 11 is not necessarily attached to the positioning guide 32. There is no need to touch the sides of the. For example, when a sufficient gap is formed between the second interleaving material 23 and the semiconductor element 11, the semiconductor element 11 is easily separated from the second interleaving material 23 and falls to the cooling plate 31. ..

Embodiment 2.
In the separation section of the semiconductor test apparatus described above, a case where the suction pad is operated by a cylinder has been described. Here, an example of a semiconductor test apparatus provided with a separation portion for operating the suction pad by a motor and a gear or the like will be described.

As shown in FIG. 19, the separation unit 6 of the semiconductor test apparatus includes a pinion gear 64, a motor 65, racks 66a and 66b, a linear guide block 67, and a linear guide rail 68. The pinion gear 64 is rotated by a motor 65. The racks 66a and 66b are arranged so as to mesh with the pinion gear 64. A linear guide block 67 and a linear guide rail 68 are fixed to the racks 66a and 66b.

The linear guide block 67 is fixed to the surface of the racks 66a and 66b opposite to the surface on which the teeth are arranged. The linear guide block 67 slides in a straight line (X direction) along the linear guide rail 37. The linear guide rail 37 is fixed to the racks 66a and 66b so as to extend in the X direction, for example. Since the other configurations are the same as those of the semiconductor test apparatus 1 shown in FIG. 1, the same members are designated by the same reference numerals, and the description thereof will not be repeated unless necessary.

Next, an example of the operation of the above-mentioned semiconductor test apparatus will be described. As described above, the semiconductor element 11 is tested by the pressurized energizing unit 3, and when the test is completed, the cooling plate 31 or the like on which the semiconductor element 11 is mounted is conveyed to a position directly below the separating unit 6 ( (See FIG. 19).

Next, as shown in FIG. 19, the suction pad 61a is brought into contact with the first interstitial material 21. The suction pad 61b is brought into contact with one end of the second interstitial material 23, and the suction pad 61c is brought into contact with the other end of the second interstitial material 23. Next, suction by the suction pads 61a, 61b, 61c is started at the same time.

Next, as shown in FIGS. 20 and 21, the pinion gear 64 is rotated by the motor 65 while maintaining the suction state by the suction pads 61a, 61b, 61c. As the pinion gear 64 rotates, the rack 66a slides in the X direction (positive), and the rack 66b slides in the X direction (negative). That is, the rack 66a and the rack 66b slide in synchronization with each other.

By this operation, the suction pad 61b approaches the suction pad 61a, and the suction pad 61c approaches the suction pad 61a. As the distance between the suction pad 61b and the suction pad 61a is shortened and the distance between the suction pad 61c and the suction pad 61a is shortened, the second interstitial material 23 is deformed in the same manner as shown in FIG. A gap is formed between the second interstitial material 23 and the semiconductor element 11.

After that, in the same manner as described above, for example, the side surface of the semiconductor element 11 is brought into contact with the positioning guide 32 to separate the semiconductor element 11 from the second interstitial member 23. Further, the claw portion separates the semiconductor element 11 from the third interstitial material 25. In this way, a series of pressurized energization tests by the semiconductor test apparatus 1 are completed.

In the above-mentioned semiconductor test apparatus, the following effects can be obtained in addition to the above-mentioned effects. That is, in the separation unit 6, the rotation of the motor 65 can be converted into a synchronized slide operation of the suction pad 61b and the suction pad 61c by the pinion gear 64 and the racks 66a and 66b. As a result, the number of drive shafts can be reduced as compared with the case where the suction pad 61b and the suction pad 61c are operated individually.

It is not always necessary to synchronize the suction pad 61b and the suction pad 61c to slide the suction pad 61b, and one of the suction pad 61b and the suction pad 61c is slid first and the other is slid later. May be good. For example, the linear guide rail 68 may be used as one, and the suction pad 61b and the suction pad 61c may be asynchronously slid with two stages.

Further, although the motor 65 is used as the drive source in the separation unit 6, for example, a drive source such as a cylinder may be separately arranged instead of the motor, and the drive force may be transmitted by a roller chain, a belt, or the like.

Further, the case where the second interstitial material 23 and the like are adsorbed by the suction pads 61a, 61b and 61c has been described, but if the second interstitial material 23 and the like can be held, the suction pads 61a, 61b and 61c are limited. However, it may be another holding unit.

The semiconductor test apparatus provided with the separation unit described in each embodiment can be combined in various ways as needed.

The embodiments disclosed this time are examples and are not limited thereto. The present invention is shown by the scope of claims, not the scope described above, and is intended to include all modifications in the sense and scope equivalent to the scope of claims.

INDUSTRIAL APPLICABILITY The present invention is effectively used in a semiconductor test apparatus that energizes a semiconductor element with a large direct current.

1 Semiconductor test equipment, 2 Base, 3 Pressurized energizing part, 4 Energizing control part, 5 Transfer part, 6 Separation part, 7 Recovery part, 11 Semiconductor element, 11a front side, 11b back side, 12 front side electrode, 13 back side electrode, 21 1st interleaving material, 23 2nd interleaving material, 25 3rd interleaving material, 25a projecting part, 31 cooling plate, 31a convex part, 32 positioning guide, 33 pressurized energizing probe, 34 pressure plate, 35 precision servo press, 36 columns , 41 programmable logic controller, 42 graphic operation terminal, 43 press controller, 44 energized power supply, 45 power supply controller, 51 X direction transfer mechanism, 52 Y direction transfer mechanism, 53 transfer stand, 54 Z direction transfer mechanism, 61a, 61b, 61c Suction pad, 62a, 62b cylinder, 63 air tube, 64 pinion gear, 65 motor, 66a, 66b rack, 67 linear guide block, 68 linear guide rail, 69a, 69b claw, 71 semiconductor element recovery tray, 72 interstitial material recovery box.

Claims (14)

A pressurizing and energizing unit that electrically tests the semiconductor element while pressurizing the semiconductor element having the first main surface and the second main surface facing each other through the interstitial material.
It has a separation part that separates the interstitial material from the semiconductor element.
The separation part
A holding part for holding the interstitial material and
By changing the position of the holding portion while holding the interleaving material and creating a gap between the interleaving material and the semiconductor element, a position changing portion for separating the semiconductor element from the interleaving material is provided. A semiconductor test device equipped. The interstitial material includes a first main surface side interstitial material which is arranged so as to be in contact with the first main surface of the semiconductor element mounted on the pressurized current-carrying portion and has a longitudinal direction and a lateral direction. ,
In the separation part
The holding part is
A first holding portion that holds the first position of the first main surface side interleaving member in the longitudinal direction, and a first holding portion.
It has a second holding portion for holding a second position separated by a first distance from the first position in the longitudinal direction of the first main surface side interleaving member.
The semiconductor test apparatus according to claim 1, wherein the position changing portion deforms the first main surface side interleaving member by shortening the first distance. In the separation part
The holding part is
The first main surface side interleaving member is located on the opposite side of the first position from the second position in the longitudinal direction, and holds a third position separated from the first position by a second distance. Has a third holding part
The semiconductor test apparatus according to claim 2, wherein the position changing portion deforms the first main surface side interleaving member by shortening the second distance. The first main surface side interstitial material is
The first part of the first main surface side interleaving material that comes into contact with the semiconductor element, and
The semiconductor test apparatus according to claim 2 or 3, further comprising a second part of the first main surface side interleaving material that comes into contact with the first part of the first main surface side interleaving material. The interstitial material is arranged so as to be in contact with the second main surface of the semiconductor element placed on the pressurized current-carrying portion, and does not protrude from the semiconductor element and come into contact with the second main surface of the semiconductor element. Includes second main surface side interstitial material with protrusions,
The separating portion has a claw portion that abuts on the protruding portion of the second main surface side interleaving member.
In the separating portion, the semiconductor element held by the holding portion is pulled away from the second main surface side interleaving member in a state where the claw portion is in contact with the protruding portion of the second main surface side interleaving member. The semiconductor test apparatus according to claim 1, wherein the second main surface side interleaving material is separated from the semiconductor element. The semiconductor test apparatus according to claim 1, wherein the position changing portion includes a mechanism for changing the position of the holding portion by a cylinder. The semiconductor test apparatus according to claim 1, wherein the position changing portion includes a mechanism for changing the position of the holding portion by a rack and a pinion gear. The pressurized energizing unit
A cooling plate on which the semiconductor element is placed and
The semiconductor test apparatus according to claim 1, further comprising a positioning guide that is arranged on the cooling plate and aligns the semiconductor element with respect to the cooling plate. The semiconductor test apparatus according to claim 1, further comprising an energization control unit that controls energization of the semiconductor element. The semiconductor test apparatus according to claim 1, further comprising a transfer unit for transferring the semiconductor element from the pressurized energization unit to the separation unit. The semiconductor test apparatus according to claim 1, further comprising a recovery unit for recovering the semiconductor element and the interstitial material. In the semiconductor test apparatus, after conducting an electrical test while pressurizing a semiconductor element having a first main surface and a second main surface facing each other through an interleaving material, the semiconductor element is separated from the interleaving material. It is a method of separating semiconductor elements.
As the interstitial material, the operation of arranging the first main surface side interstitial material on the first main surface side of the semiconductor element and the first position in the first main surface side interstitial material are maintained, and from the first position. The action of holding the second position separated by a distance,
While holding the first position and the second position in the first main surface side interstitial material, the first main surface side interstitial material is deformed by shortening the distance, and the first main surface side interstitial material is deformed. A method for separating a semiconductor element, comprising an operation of creating a gap between the semiconductor element and the semiconductor element to separate the semiconductor element from the first main surface side interleaving material. In the operation of holding the first position and the second position, respectively, the first main surface side interstitial material is held by the portion of the surface of the semiconductor element opposite to the surface facing the first main surface. The method for separating a semiconductor element according to claim 12. As the interstitial material, the second main surface side interstitial material in contact with the second main surface of the semiconductor element is locked, and while holding the semiconductor element, the second main surface side interstitial material is used as the semiconductor element. The method for separating a semiconductor element according to claim 12, further comprising an operation of pulling away from the semiconductor element.

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