JP6903425B2 - Liquid crystal display device - Google Patents

Description

The present invention relates to a liquid crystal display device.

a Applications of TFT substrate A thin film transistor substrate (TFT substrate) includes a thin film transistor (TFT) used as a switching device and is incorporated in an electro-optical device. Electro-optic devices include liquid crystal display devices, light emitting display devices, and the like. The liquid crystal display device is a display device that uses a liquid crystal. The light emitting display device is a display device that uses a light emitting diode (LED). Semiconductor devices such as TFT substrates are characterized by low power consumption and thin thickness. For this reason, semiconductor devices are actively applied to flat panel displays, which are flat electro-optical devices.

The liquid crystal display device is also called a liquid crystal display (LCD). Liquid crystal displays include simple matrix LCDs and TFT-LCDs. In TFT-LCD, TFT is used as a switching device. The TFT-LCD is provided with a TFT substrate and is superior to a simple matrix type LCD in terms of display quality, and is widely used in display products such as mobile computers, notebook personal computers, and televisions.

b Basic structure of liquid crystal panel The liquid crystal display device includes a liquid crystal panel. The liquid crystal panel includes a liquid crystal cell, a polarizing plate on the front side, and a polarizing plate on the back side. The polarizing plate on the front side is attached to the main surface on the front side of the liquid crystal cell. The polarizing plate on the back side is attached to the main surface on the back side of the liquid crystal cell. The liquid crystal cell includes a TFT substrate, a color filter substrate (CF substrate), and a liquid crystal layer. The TFT substrate includes a plurality of TFTs arranged in an array. The CF substrate is also called a facing substrate and includes a plurality of color filters and the like arranged in an array. The liquid crystal layer is sandwiched between the TFT substrate and the CF substrate.

The TFT substrate provided in the liquid crystal display device for driving the liquid crystal by a longitudinal electric field includes a plurality of pixel electrodes arranged in an array. The CF substrate provided in the liquid crystal display device that drives the liquid crystal by a longitudinal electric field includes a common electrode. A drive voltage corresponding to the image signal is applied to the plurality of pixel electrodes. The potential of the common electrode is fixed to the common potential, which is a constant potential. Therefore, the liquid crystal constituting the liquid crystal layer provided in the liquid crystal display device for driving the liquid crystal by the vertical electric field is driven by the electric field in the direction substantially perpendicular to the main surface of the liquid crystal panel.

c Transmissive liquid crystal display device, reflective liquid crystal display device and semi-transmissive liquid crystal display device The liquid crystal display device includes a transmissive liquid crystal display device, a reflective liquid crystal display device and a semi-transmissive liquid crystal display device.

The transmissive liquid crystal display device includes a backlight in addition to the liquid crystal panel. The backlight faces the main surface on the back side of the liquid crystal panel. The backlight comprises a light source. The light source is arranged along the main surface on the back side of the liquid crystal panel or the side surface of the liquid crystal panel. In the transmissive liquid crystal display device, the light source light emitted by the light source passes through the liquid crystal panel, and the display light transmitted through the liquid crystal panel displays a color image. The transmissive liquid crystal display device has a problem that when the intensity of the ambient light is strong, the intensity of the display light is weaker than the intensity of the ambient light and the visibility is lowered. That is, the transmissive liquid crystal display device has a problem that when the intensity of the ambient light is strong, the intensity of the light source light must be increased in order to improve the visibility, and the power consumption increases.

The liquid crystal panel provided in the reflective liquid crystal display device includes a reflector provided on the substrate. In a reflective liquid crystal display device, ambient light is reflected on the surface of the reflecting plate, the reflected light reflected on the surface of the reflecting plate is transmitted through the liquid crystal panel, and a color image is displayed by the display light transmitted through the liquid crystal panel. .. The reflective liquid crystal display device has a problem that when the intensity of the ambient light is weak, the intensity of the display light is weakened and the visibility is lowered.

In order to solve these problems, a transflective liquid crystal display device has been proposed. Each of the plurality of pixels of the transflective liquid crystal display device includes a transmissive pixel electrode that transmits light and a reflective pixel electrode that reflects light.

d Structure of the TFT substrate provided in the semi-transmissive liquid crystal display device The first and second structural examples of the TFT substrate provided in the semi-transmissive liquid crystal display device will be described below.

In both the first and second structural examples, the TFT substrate includes a transparent insulating substrate, a gate wiring, a first insulating film, and a source wiring. The gate wiring is arranged on the main surface of the transparent insulating substrate. The first insulating film is arranged on the main surface of the transparent insulating substrate so as to overlap the gate wiring. The source wiring is arranged on the main surface of the transparent insulating substrate so as to be superimposed on the first insulating film. The source wiring intersects the gate wiring when viewed in a plane from a direction perpendicular to the main surface of the transparent insulating substrate, but the first insulating film makes the gate wiring perpendicular to the main surface of the transparent insulating substrate. Separated in direction.

In both the first and second structural examples, the TFT substrate includes a plurality of pixel structures arranged in a matrix on the main surface of the transparent insulating substrate. The gate wiring includes a gate electrode for each of the plurality of pixel structures. The source wiring includes source electrodes for each of the plurality of pixel structures. The TFT substrate further includes a semiconductor film and a drain electrode for each of the plurality of pixel structures. In each of the plurality of pixel structures, the semiconductor film is placed on the main surface of the transparent insulating substrate so as to be superimposed on the first insulating film, and faces the gate electrode with the first insulating film interposed therebetween, and the source electrode and the drain electrode. Contact the semiconductor film, and the gate electrode, the source electrode and the drain electrode, the semiconductor film and the gate insulating film form a TFT as a switching element.

In the first structural example, the TFT substrate further includes an interlayer insulating film, and further includes a transmission pixel electrode and a reflection pixel electrode for each of the plurality of pixel structures. The interlayer insulating film is composed of a second insulating film and an organic resin film, and is arranged on the main surface of the transparent insulating substrate so as to be superimposed on the gate wiring, the source wiring, the semiconductor film and the drain electrode. In each of the plurality of pixel structures, the transmission pixel electrode contacts the drain electrode via a contact hole formed in the interlayer insulating film and is electrically connected to the drain electrode. Further, in each of the plurality of pixel structures, the reflective pixel electrode is arranged on the main surface of the transparent insulating substrate so as to be superimposed on the transmission pixel electrode. The reflective pixel electrode is not separated from the transmissive pixel electrode by an insulating film. The transmission pixel electrode is a conductive film having a high light transmittance. The reflective pixel electrode is a metal film having a high light reflectance. According to the first structural example, the region where the transmissive pixel electrodes are arranged but the reflective pixel electrodes are not arranged is the transmissive region for transmitting light, and the region where the reflective pixel electrodes are arranged is the reflective region for reflecting light. Become.

In the second structural example, the TFT substrate further includes a second insulating film, and further includes a transmission pixel electrode for each of the plurality of pixel structures. The second insulating film is arranged on the main surface of the transparent insulating substrate so as to be superimposed on the gate wiring, the source wiring, the semiconductor film and the drain electrode. In each of the plurality of pixel structures, the drain electrode extends to a position away from the TFT to become a reflective pixel electrode, and the transmissive pixel electrode contacts the reflective pixel electrode via an opening formed in the second insulating film. It is electrically connected to the reflective pixel electrode. The opening overlaps the reflective pixel electrode when viewed in a plane from a direction perpendicular to the main surface of the transparent insulating substrate. The transmission pixel electrode is a conductive film having a high transmittance. The reflective pixel electrode is a conductive film having a high reflectance. According to the second structural example, the region where the transmissive pixel electrode is arranged but the drain electrode which is the reflective pixel electrode is not arranged becomes the transmissive region which transmits light, and the region where the drain electrode which is the reflective pixel electrode is arranged. Becomes a reflection area that reflects light.

When the second structural example is adopted and the first insulating film and the second insulating film do not contain the organic resin film, the semitransparent is compared with the case where the first structural example is adopted. The process of manufacturing a type liquid crystal display device is simplified. The technique described in Patent Document 1 is an example thereof. In the following, a TFT substrate in which a second structural example is adopted and the first insulating film and the second insulating film do not contain an organic resin film is referred to as an organic filmless transflective TFT substrate.

e Liquid crystal layer thickness In a semi-transmissive liquid crystal display device, a structure in which the thickness of the liquid crystal layer in the transmission region is different from the thickness of the liquid crystal layer in the reflection region may be adopted. The structure is realized by providing a step layer on the CF substrate facing the TFT substrate. The thickness of the liquid crystal layer is determined by the distance from the inner main surface of the TFT substrate to the inner main surface of the CF substrate.

When the structure is adopted, it is desirable that the transmission region and the reflection region are arranged in stripes on the TFT substrate, and the steps are continuously arranged in stripes on the CF substrate. As a result, process defects in the process of manufacturing the semi-transmissive liquid crystal display device are less likely to occur, and display defects are less likely to occur in the manufactured semi-transmissive liquid crystal display device. The technique described in Patent Document 2 is an example thereof.

The structure may be adopted in an organic film-less semi-transmissive TFT substrate, or may be adopted in a semi-transmissive TFT substrate other than the organic film-less semi-transmissive TFT substrate.

f Number of scanning lines and signal lines Generally, each pixel structure, which is each of a plurality of pixel structures, has one scanning line and one signal line. One scanning line consists of gate wiring. One signal line consists of source wiring. However, each pixel structure may have two scanning lines, and each pixel structure and a pixel structure adjacent to each pixel structure may share one signal line. In this case, the scale of the scanning line drive circuit is double that of the general case, but the scale of the signal line drive circuit is double that of the normal case.

On the other hand, the scale of the scanning line drive circuit is about the same as that of a simple shift register circuit that sequentially turns on and off the TFT, and is relatively small. However, since the signal line drive circuit includes a circuit that converts a digital signal expressing an image into an analog signal and temporarily holds the signal line drive circuit, the scale of the signal line drive circuit is relatively large. Therefore, the scale of the scanning line drive circuit is smaller than the scale of the signal line driving circuit, and the cost of the scanning line driving circuit is lower than the cost of the signal line driving circuit. Therefore, when the scale of the scanning line drive circuit is doubled in the general case and the scale of the signal line driving circuit is halved in the normal case, the entire signal line driving circuit and scanning line driving circuit are used. The scale is smaller than in the general case, and the overall cost of the signal line drive circuit and the scanning line drive circuit is lower than in the general case. Therefore, when each pixel structure has two scanning lines and each pixel structure and the pixel structure adjacent to each pixel structure share one signal line, the cost of the liquid crystal display device is reduced. The technique described in Patent Document 3 is an example thereof.

Japanese Unexamined Patent Publication No. 2005-292660 Japanese Unexamined Patent Publication No. 2007-264380 Japanese Unexamined Patent Publication No. 2012-103343

In a liquid crystal display device, it is required to increase the aperture ratio, which affects the display performance, to improve the display performance.

The organic film-less semi-transmissive TFT substrate is manufactured at a lower cost than the semi-transmissive TFT substrate that is not the organic film-less semi-transmissive TFT substrate. However, the organic filmless transflective TFT substrate has a limitation that the pixel electrode and the wiring or the like cannot be overlapped with each other. Therefore, the semi-transmissive liquid crystal display device provided with the organic film-less semi-transmissive TFT substrate has a problem that the aperture ratio, which affects the display performance, tends to be low. Therefore, in an organic filmless transflective TFT substrate, it is particularly strongly required to increase the aperture ratio that affects the display performance and improve the display performance.

This problem becomes particularly remarkable when each pixel structure has two scanning lines and each pixel structure and a pixel structure adjacent to each pixel structure share one signal line. Further, when each pixel structure has two scanning lines and each pixel structure and a pixel structure adjacent to each pixel structure share one signal line, a display defect is likely to occur.

The present invention is made to solve this problem. An object to be solved by the present invention is to increase the aperture ratio of the liquid crystal display device and improve the display performance of the liquid crystal display device.

In a liquid crystal display device, a facing substrate faces a thin film substrate with a liquid crystal layer interposed therebetween.

In a thin film substrate, a plurality of pixel structures are arranged in a matrix on the main surface of the substrate. Each pixel structure, which is each of the plurality of pixel structures, has a rectangular planar shape, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light. The transmissive region allows light to pass through. The first reflection region, transmission region, and second reflection region are arranged in the long side direction of the rectangular planar shape. The transmission region is sandwiched between the first reflection region and the second reflection region. Each pixel structure has a gate electrode arranged on the main surface, a gate insulating film placed on the main surface overlaid on the gate electrode, and a gate insulating film placed on the main surface overlaid on the gate insulating film. A semiconductor film that faces the gate electrode across the board, a source electrode that is placed on the main surface and contacts the semiconductor film, and a source electrode that is placed on the main surface and contacts the semiconductor film, and the gate electrode, source electrode, gate insulating film, and the like. An interlayer insulating film that constitutes a thin film together with a semiconductor film, is arranged in a first reflection region, and is arranged on a main surface so as to overlap with a drain electrode that reflects light and a source electrode and a drain electrode, and a contact hole is formed. The pixel electrode, which is placed on the main surface over the interlayer insulating film and contacts the drain electrode via the contact hole to transmit light, and the pixel electrode, which is placed on the main surface and is placed in the second reflection region. The contact hole is the first contact hole, the second contact hole is formed in the interlayer insulating film, and the light-reflecting electrode is arranged in the same layer as the drain electrode. It is a reflective electrode to be formed, and the pixel electrode comes into contact with the reflective electrode via the second contact hole.

According to the present invention, the first reflection region and the second reflection region of the thin film substrate are arranged near one end portion and the other end portion of the pixel, respectively. Therefore, shading in the vicinity of one end and the other end of the pixel is performed by the first reflection region and the second reflection region in the thin film substrate, respectively, and one end and the other end of the pixel are used. It becomes unnecessary to perform shading in the vicinity of the pixel on the facing substrate, and the area occupied by the black matrix that performs shading in the vicinity of one end and the other end of the pixel is reduced. Therefore, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

Objectives, features, aspects, and advantages of the present invention will become more apparent with the following detailed description and accompanying drawings.

It is sectional drawing which illustrates the liquid crystal display device of Embodiment 1. FIG. It is a top view which shows the thin film substrate and the like provided in the liquid crystal display device of Embodiment 1. FIG. It is a top view which illustrates the pixel structure provided in the liquid crystal display device of Embodiment 1. FIG. It is sectional drawing which illustrates the pixel structure provided in the liquid crystal display device of Embodiment 1. FIG. It is a top view which illustrates the pixel structure of Embodiment 2. It is sectional drawing which illustrates the pixel structure of Embodiment 2. It is a top view which illustrates the pixel structure of Embodiment 3. It is sectional drawing which illustrates the pixel structure of Embodiment 3. It is a top view which illustrates the pixel structure of Embodiment 4. It is sectional drawing which illustrates the pixel structure of Embodiment 5. It is a top view which illustrates the pixel structure of Embodiment 6. It is sectional drawing which illustrates the pixel structure of Embodiment 6.

1 Embodiment 1
1.1 Liquid crystal display device The schematic view of FIG. 1 is a cross-sectional view illustrating the liquid crystal display device of the first embodiment.

The liquid crystal display device 1000 illustrated in FIG. 1 is a semi-transmissive liquid crystal display device, and includes a liquid crystal panel 1020 and a backlight 1021. The liquid crystal display device 1000 may include components other than these components.

The backlight 1021 faces one main surface 1040 of the liquid crystal panel 1020.

When the liquid crystal display device 1000 displays an image, the backlight 1021 emits light from the light source. The emitted light source light is incident on one main surface 1040 of the liquid crystal panel 1020, is incident on one main surface 1040 of the liquid crystal panel 1020, is transmitted through the liquid crystal panel 1020, is transmitted through the liquid crystal panel 1020, and then is transmitted through the liquid crystal panel 1020. Emits from the other main surface 1041 of the. Further, the ambient light was incident on the other main surface 1041 of the liquid crystal panel 1020, incident on the other main surface 1041 of the liquid crystal panel 1020, and then reflected inside the liquid crystal panel 1020 and reflected inside the liquid crystal panel 1020. Later, it exits from the other main surface 1041 of the liquid crystal panel 1020. In some cases, only one of the light source light and the ambient light is incident on the liquid crystal panel 1020.

When the liquid crystal display device 1000 displays an image, an image signal is input to the liquid crystal display device 1000, and the light transmittance of the liquid crystal panel 1020 is controlled according to the input image signal.

As a result, the image corresponding to the input image signal is displayed on the other main surface 1041 of the liquid crystal panel 1020.

1.2 Liquid crystal panel As shown in FIG. 1, the liquid crystal panel 1020 includes a polarizing plate 1060, a thin film transistor substrate (TFT substrate) 1061, a liquid crystal layer 1062, an opposing substrate 1063, and a polarizing plate 1064.

The facing substrate 1063 is also called a color filter substrate (CF substrate), and faces the TFT substrate 1061 with the liquid crystal layer 1062 interposed therebetween. The polarizing plate 1060 is attached to the outer main surface 1080 of the TFT substrate 1061. The polarizing plate 1064 is attached to the outer main surface 1100 of the CF substrate 1063.

When the liquid crystal display device 1000 displays an image, the light source light sequentially passes through the polarizing plate 1060, the TFT substrate 1061, the liquid crystal layer 1062, the CF substrate 1063, and the polarizing plate 1064. Further, the ambient light is sequentially transmitted through the polarizing plate 1064, the CF substrate 1063 and the liquid crystal layer 1062, sequentially transmitted through the polarizing plate 1064, the CF substrate 1063 and the liquid crystal layer 1062, and then reflected by the TFT substrate 1061 to be reflected on the TFT substrate 1061. After being reflected by, the liquid crystal layer 1062, the CF substrate 1063, and the polarizing plate 1064 are sequentially transmitted.

When the liquid crystal display device 1000 displays an image, the electric field applied to the liquid crystal layer 1062 is controlled according to the image signal input to the liquid crystal display device 1000, and the liquid crystal layer 1062 is displayed according to the applied electric field. The constituent liquid crystal molecules are driven in the horizontal direction to control the orientation state of the liquid crystal layer 1062, the polarization state of the light transmitted through the liquid crystal layer 1062 is controlled according to the orientation state of the liquid crystal layer 1062, and the polarization state of the light is controlled according to the polarization state of the light. The light transmittance of the liquid crystal panel 1020 is controlled. As a result, the light transmittance of the liquid crystal panel 1020 is controlled according to the input image signal.

1.3 TFT Substrate The schematic view of FIG. 2 is a plan view illustrating a TFT substrate and the like provided in the liquid crystal display device of the first embodiment.

As shown in FIG. 2, the liquid crystal display device 1000 includes a plurality of integrated circuit chips (IC chips) 1120 and a printed circuit board 1121 in addition to the TFT substrate 1061. The TFT substrate 1061 includes a glass substrate 1140, a plurality of signal lines 1141, a plurality of scanning lines 1142, a plurality of thin film transistors (TFT) 1143, a plurality of common wirings 1144, a plurality of external wirings 1145, a plurality of terminal electrodes 1146, and a plurality of terminals. A terminal electrode 1147 is provided. In addition to these components, the TFT substrate 1061 includes an alignment film (not shown). FIG. 2 shows only one TFT 1143 included in the plurality of TFTs 1143, only one terminal electrode 1146 included in the plurality of terminal electrodes 1146, and one included in the plurality of terminal electrodes 1147. Only the terminal electrode 1147 is shown.

The glass substrate 1140 is a transparent insulating substrate made of glass. The glass substrate 1140 may be replaced with a transparent insulating substrate made of a material other than glass.

A plurality of signal lines 1141, a plurality of scanning lines 1142, a plurality of TFTs 1143, a plurality of common wirings 1144, a plurality of external wirings 1145, a plurality of terminal electrodes 1146 and a plurality of terminal electrodes 1147 are arranged on the main surface of the glass substrate 1140. Will be done. The plurality of signal lines 1141, the plurality of scanning lines 1142, the plurality of TFTs 1143, and the plurality of common wirings 1144 are arranged in the display area 1160. The plurality of external wires 1145, the plurality of terminal electrodes 1146, and the plurality of terminal electrodes 1147 are arranged in the frame region 1161.

The display area 1160 is an area having a rectangular planar shape on which an image is displayed. The frame area 1161 is an area having a frame-like planar shape adjacent to the display area 1160 and surrounding the display area 1160. The display area 1160 having a rectangular planar shape may be replaced with a display area having a planar shape other than the rectangular shape. The frame area 1161 having a frame-like planar shape may be replaced with an area having a flat shape other than the frame shape, and the frame area 1161 adjacent to the display area 1160 and surrounding the display area 1160 is adjacent to the display area 1160. It may be replaced with an area that does not enclose the area 1160.

The liquid crystal layer 1062 and the alignment film are arranged in the display area 1160. The liquid crystal layer 1062 and the alignment film may protrude from the display area 1160.

Each of the plurality of signal lines 1141 is linear and extends in the direction Y. The plurality of signal lines 1141 are arranged in the direction X perpendicular to the direction Y. Each of the plurality of scanning lines 1142 is linear and extends in direction X. The plurality of scanning lines 1142 are arranged in the direction Y. Each of the plurality of scanning lines 1142 intersects each of the plurality of signal lines 1141 when viewed in a plane from a direction perpendicular to the main surface of the glass substrate 1140.

Pixels are formed in the pixel region 1180 surrounded by two adjacent signal lines 1141 included in the plurality of signal lines 1141 and two adjacent scanning lines 1142 included in the plurality of scanning lines 1142. Therefore, the liquid crystal panel 1020 has a plurality of pixels arranged in a matrix. The plurality of TFTs 1143 correspond to each of the plurality of pixels and are arranged in a matrix.

The plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are terminals for external connection. The plurality of terminal electrodes 1147 are arranged closer to the end of the TFT substrate 1061 than the plurality of terminal electrodes 1146. The terminals of the plurality of IC chips 1120 are connected to the surface of the plurality of terminal electrodes 1146 via a connection medium such as a bump or an anisotropic conductive film (ACF). As a result, the plurality of IC chips 1120 are electrically connected to the plurality of terminal electrodes 1146. The plurality of IC chips 1120 may be replaced with other external members. A printed circuit board 1121 is connected to the surface of the plurality of terminal electrodes 1147 via a similar connection medium. As a result, the printed circuit board 1121 is electrically connected to the plurality of terminal electrodes 1147. The printed circuit board 1121 may be replaced with another external member.

The plurality of external wirings 1145 extend from the plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 arranged in the frame area 1161 to the plurality of signal lines 1141 and the plurality of scanning lines 1142 arranged in the display area 1160. The terminal electrode 1146 and the plurality of terminal electrodes 1147 are electrically connected to the plurality of signal lines 1141 and the plurality of scanning lines 1142. At least a part of the plurality of external wirings 1145 passes through the region where the plurality of IC chips 1120 are arranged, and extends from the region where the plurality of IC chips 1120 are arranged toward the end of the TFT substrate 1061. It reaches the terminal electrode 1147 of.

The plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are electrically connected to the ends of the plurality of external wires 1145 and are provided by the plurality of external wires 1145 in the absence of the plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147. It provides a larger connection area than the connection area to be made.

When the liquid crystal display device 1000 displays an image, the image signal input to the liquid crystal display device 1000 is input to the plurality of terminal electrodes 1147 via the printed substrate 1121, and the drive voltage reflecting the input image signal is generated. The electric field transmitted to the plurality of signal lines 1141 and the plurality of scanning lines 1142 by the plurality of external wirings 1145 and applied to the liquid crystal layer 1062 is controlled according to the transmitted drive voltage. As a result, the electric field applied to the liquid crystal layer 1062 is controlled according to the input image signal. The transmitted drive voltage is controlled by the IC chip 1120.

1.4 Pixel structure The liquid crystal panel 1020 has a plurality of pixels arranged in a matrix. Therefore, the TFT substrate 1061 has a plurality of pixel structures each constituting a plurality of pixels arranged in a matrix. The plurality of pixel structures provided in the TFT substrate 1061 are arranged in a matrix on the main surface of the glass substrate 1140. Further, the CF substrate 1063 has a plurality of pixel structures constituting each of the plurality of pixels. The plurality of pixel structures provided on the CF substrate 1063 are arranged in a matrix on the main surface of the glass substrate provided on the CF substrate 1063.

1.5 Arrangement of First Reflection Region, Transmission Region and Second Reflection Region The schematic diagram of FIG. 3 is a plan view illustrating a pixel structure provided in the liquid crystal display device of the first embodiment. The schematic view of FIG. 4 is a cross-sectional view illustrating a pixel structure provided in the liquid crystal display device of the first embodiment. FIG. 4 illustrates a cross section at the position of the cutting line AA illustrated in FIG. In FIGS. 3 and 4, the drawing of the alignment film provided on the TFT substrate 1061 is omitted, and the illustration of the alignment film and the coloring material provided on the CF substrate 1063 is omitted.

The pixel structure 1200 illustrated in each of FIGS. 3 and 4 is each of a plurality of pixel structures provided in the TFT substrate 1061, has a rectangular planar shape, and has an opening 1220. The opening 1220 is used for displaying an image and has a first reflection region 1240, a transmission region 1241 and a second reflection region 1242. The first reflection region 1240 and the second reflection region 1242 reflect light. The transmission region 1241 transmits light. When the first reflection region 1240 and the second reflection region 1242 coexist with the transmission region 1241, the liquid crystal display device 1000 becomes a semi-transmissive liquid crystal display device.

An electric field that reflects the input image signal is not applied to the liquid crystal layer 1062 in the vicinity of the plane positions 1260 and 1261 where one end and the other end of the pixel are arranged, respectively. Therefore, when the light source light passes through the liquid crystal layer 1062 and the light source light passes near the plane positions 1260 and 1261, the image is not properly displayed. Light that interferes with the proper display of an image in this way is called stray light. In the liquid crystal display device 1000, shading is performed in the vicinity of the plane positions 1260 and 1261 in order to suppress the generation of stray light.

The first reflection region 1240, the transmission region 1241 and the second reflection region 1242 are arranged in the direction Y, which is the long side direction of the rectangular planar shape. The reflection region is divided into a first reflection region 1240 and a second reflection region 1242, and the transmission region 1241 is sandwiched between the first reflection region 1240 and the second reflection region 1242. Therefore, the first reflection region 1240 and the second reflection region 1242 are arranged in the vicinity of the plane positions 1260 and 1261, respectively. Therefore, shading in the vicinity of the plane positions 1260 and 1261 is performed by the first reflection region 1240 and the second reflection region 1242 on the TFT substrate 1061, respectively. That is, the first reflection region 1240 and the second reflection region 1242 have the same functions as the black matrix 1380 provided on the CF substrate 1063 in order to prevent stray light from being generated. This reduces the need for the CF substrate 1063 to block light in the vicinity of plane positions 1260 and 1261, reduces the area occupied by the black matrix 1380 that blocks light in the vicinity of plane positions 1260 and 1261, and reduces the opening 1220. It contributes to reducing the area occupied by the black matrix 1380 that causes the black matrix. As a result, the opening 1220 becomes larger, the aperture ratio of the liquid crystal display device 1000 becomes higher, and the display performance of the liquid crystal display device 1000 improves, as compared with the case where the transmission region is arranged in the vicinity of the plane position 1261.

The first reflection region 1240 and the second reflection region 1242 are continuous from the transmission region 1241. Therefore, in the vicinity of the plane position 1262 where the boundary between the first reflection region 1240 and the transmission region 1241 is arranged and the plane position 1263 where the boundary between the second reflection region 1242 and the transmission region 1241 is arranged, the input is input. An electric field that reflects the image signal is applied to the liquid crystal layer 1062. Therefore, stray light does not occur in the vicinity of the plane positions 1262 and 1263.

1.6 Arrangement of components of the TFT substrate As shown in FIGS. 3 and 4, the pixel structure 1200 has a gate electrode 1280, a common electrode 1281, a gate insulating film 1282, a semiconductor film 1283, a source electrode 1284, and a drain electrode 1285. , A reflective electrode 1286, an interlayer insulating film 1287, and a pixel electrode 1288. The pixel structure 1200 may include components other than these components.

The gate electrode 1280, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284 and the drain electrode 1285 constitute the TFT 1143. A plurality of source electrodes 1284 provided in each of the plurality of pixel structures 1200 arranged in the direction Y are electrically connected to each other, and one signal arranged over the plurality of pixel structures 1200 arranged in the direction Y. It constitutes line 1141. The plurality of gate electrodes 1280 provided in the plurality of pixel structures 1200 arranged in the direction X are electrically connected to each other, and one scan arranged over the plurality of pixel structures 1200 arranged in the direction X. It constitutes line 1142. As a result, the plurality of TFTs 1143 are electrically connected to the plurality of signal lines 1141, the plurality of scanning lines 1142, and the plurality of external wirings 1145, and the plurality of terminal electrodes 1146 and the plurality of terminal electrodes 1147 are connected to the plurality of signal lines 1141. , A plurality of scanning lines 1142 and a plurality of external wirings 1145 are electrically connected to the plurality of TFTs 1143. The plurality of common electrodes 1281 provided in the plurality of pixel structures 1200 arranged in the direction X are electrically connected to each other, and one common electrode 1281 is arranged over the plurality of pixel structures 1200 arranged in the direction X. The wiring 1144 constitutes. Further, the plurality of common wirings 1144 are electrically connected to each other. As a result, the plurality of common electrodes 1281 provided in the plurality of pixel structures 1200 arranged in a matrix are electrically connected to each other.

The gate electrode 1280, the common electrode 1281, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the reflective electrode 1286, the interlayer insulating film 1287, and the pixel electrode 1288 are arranged in the display area 1160. The TFT 1143 is located below the pixel electrode 1288.

The gate electrode 1280 and the common electrode 1281 are arranged on the main surface 1300 of the glass substrate 1140. Since the common electrode 1281 is arranged in the same layer as the gate electrode 1280, it is formed at the same time as the gate electrode 1280. The gate electrode 1280 is arranged in the region where the TFT 1143 is arranged. The common electrode 1281 does not overlap with the gate electrode 1280 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140, and is separated from the gate electrode 1280 in a direction parallel to the main surface 1300 of the glass substrate 1140. Is done. As a result, the common electrode 1281 is insulated from the gate electrode 1280.

The gate insulating film 1282 is arranged on the main surface 1300 of the glass substrate 1140 so as to be superimposed on the gate electrode 1280 and the common electrode 1281, and covers the entire gate electrode 1280 and the common electrode 1281. The gate insulating film 1282 insulates the semiconductor film 1283, the source electrode 1284, the drain electrode 1285 and the reflective electrode 1286 arranged on the gate insulating film 1282 from the gate electrode 1280 and the common electrode 1281.

The semiconductor film 1283 is arranged on the main surface 1300 of the glass substrate 1140 so as to be superimposed on the gate insulating film 1282. The semiconductor film 1283 has an island shape, overlaps with the gate electrode 1280 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140, and faces the gate electrode 1280 with the gate insulating film 1282 interposed therebetween. The semiconductor film 1283 has a channel region 1320, a source region 1321 and a drain region 1322. The source region 1321 and the drain region 1322 sandwich the channel region 1320.

The source electrode 1284 and the drain electrode 1285 are arranged on the main surface 1300 of the glass substrate 1140 so as to overlap the gate insulating film 1282 and the semiconductor film 1283. The reflective electrode 1286 is arranged on the main surface 1300 of the glass substrate 1140 so as to be superimposed on the gate insulating film 1282. Since the reflective electrode 1286 is arranged in the same layer as the source electrode 1284 and the drain electrode 1285, it is formed at the same time as the source electrode 1284 and the drain electrode 1285. The source electrode 1284 and the drain electrode 1285 come into contact with the source region 1321 and the drain region 1322 of the semiconductor film 1283, respectively. The reflective electrode 1286 does not overlap with the source electrode 1284 and the drain electrode 1285 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140, and the source electrode 1284 and the drain electrode 1285 to the main surface of the glass substrate 1140. Separated in a direction parallel to 1300.

The interlayer insulating film 1287 is arranged on the main surface 1300 of the glass substrate 1140 so as to be superimposed on the source electrode 1284, the drain electrode 1285 and the reflective electrode 1286, and covers the source electrode 1284, the drain electrode 1285 and the reflective electrode 1286. As a result, the interlayer insulating film 1287 is arranged on the TFT 1143.

The pixel electrode 1288 is arranged on the main surface 1300 of the glass substrate 1140 so as to be superimposed on the interlayer insulating film 1287. The pixel electrode 1288 overlaps with the drain electrode 1285 and the reflection electrode 1286 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. The pixel electrode 1288 contacts the drain electrode 1285 via the contact hole 1340 formed in the interlayer insulating film 1287, and contacts the reflective electrode 1286 via the contact hole 1341 formed in the interlayer insulating film 1287. As a result, the pixel electrode 1288 is electrically connected to the drain electrode 1285 and the reflection electrode 1286. Therefore, the potential of the pixel electrode 1288 becomes the same as the potential of the drain electrode 1285 and the potential of the reflection electrode 1286. The contact hole 1340 enables pixel contact in which the pixel electrode 1288 and the drain electrode 1285 are in contact, and the contact hole 1341 enables pixel contact in which the pixel electrode 1288 and the reflective electrode 1286 are in contact.

The drain electrode 1285 is arranged in the first reflection region 1240. The reflection electrode 1286 is arranged in the second reflection region 1242. However, the drain electrode 1285 and the reflection electrode 1286 are not arranged in the transmission region 1241.

The pixel electrode 1288 is arranged in the opening 1220. Therefore, the pixel electrode 1288 overlaps with the counter electrode 1382 described later in the opening 1220 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140.

1.7 Arrangement of CF Board Components The pixel structure 1360 shown in FIG. 4 is each of a plurality of pixel structures provided on the CF board 1063, and includes a black matrix 1380, a step layer 1381, and a counter electrode 1382.

The glass substrate 1400 provided on the CF substrate 1063 is a transparent insulating substrate made of glass. The glass substrate 1400 may be replaced with a transparent insulating substrate made of a material other than glass.

The black matrix 1380 is arranged on the main surface 1420 of the glass substrate 1400. An opening 1440 is formed in the black matrix 1380. The opening 1440 overlaps the opening 1220 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. Therefore, the black matrix 1380 overlaps with the non-opening 1244 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140.

The step layer 1381 is arranged on the main surface 1420 of the glass substrate 1400 so as to be superposed on the black matrix 1380. The step layer 1381 is arranged in the first reflection area 1240, the second reflection area 1242 and the non-opening 1244, but not in the transmission area 1241. As a result, the gap between the inner main surface 1460 of the TFT substrate 1061 and the inner main surface 1480 of the CF substrate 1063 in the transmission region 1241 is formed in the first reflection region 1240, the second reflection region 1242, and the non-opening 1244. It is wider than the gap between the inner main surface 1460 of the TFT substrate 1061 and the inner main surface 1480 of the CF substrate 1063, and the thickness of the liquid crystal layer 1062 in the transmission region 1241 is the first reflection region 1240 and the second reflection region. It becomes thicker than the thickness of the liquid crystal layer 1062 in the 1242 and the transmission region 1241, and the display performance of the liquid crystal display device 1000 is improved. For example, the thickness of the liquid crystal layer 1062 in the transmission region 1241 is 4.0 μm, and the thickness of the liquid crystal layer 1062 in the first reflection region 1240, the second reflection region 1242 and the non-opening 1244 is 2.0 μm. .. The step layer formed by the step layer 1381 provided on the CF substrate 1063 is formed by a gate insulating film 1282 made of an inorganic material provided on the TFT substrate 1061, an insulating film such as an interlayer insulating film 1287, a gate electrode 1280, a common electrode 1281, and a source electrode 1284. , It is easier than forming a step with a metal film such as the drain electrode 1285. For example, when the thickness of the liquid crystal layer 1062 in the transmission region 1241 is 4.0 μm and the thickness of the liquid crystal layer 1062 in the first reflection region 1240, the second reflection region 1242 and the non-opening 1244 is 2.0 μm. The 2.0 μm step required for the above can be easily formed by the step layer 1381 provided on the CF substrate 1063, but it is not easy to form by the insulating film and the metal film provided on the TFT substrate 1061.

The grooves 1500 formed by the plurality of step layers 1381 provided in the plurality of pixel structures 1360 arranged in the direction X are linearly arranged in the direction X and form one groove extending in the direction X. .. Therefore, the plurality of step layers 1381 arranged in a matrix are striped.

The counter electrode 1382 is arranged on the main surface 1420 of the glass substrate 1400 so as to be superimposed on the step layer 1381. The plurality of counter electrodes 1382 provided in the plurality of pixel structures 1360 arranged in a matrix are electrically connected to each other.

1.8 Pixel transmission control The TFT 1143 is applied to the gate electrode 1280 with the source electrode 1284 and the drain electrode 1285 in a conductive state when the drive voltage applied to the gate electrode 1280 is on-level. It is a switching device in which the source electrode 1284 and the drain electrode 1285 are in a non-conducting state when the drive voltage is off level, and the drive voltage corresponding to the image signal input to the liquid crystal display device 1000 is applied to the pixel electrode 1288. Used to selectively apply. The TFT 1143 turns the liquid crystal display device 1000 into an active matrix type liquid crystal display device.

When the liquid crystal display device 1000 displays an image, the drive voltage corresponding to the image signal input to the liquid crystal display device 1000 is transmitted to the gate electrode 1280 by the scanning line 1142, and is transmitted to the image signal input to the liquid crystal display device 1000. The corresponding drive voltage is transmitted to the source electrode 1284 by the signal line 1141. The TFT 1143 transmits the drive voltage transmitted to the source electrode 1284 to the drain electrode 1285 when the drive voltage transmitted to the gate electrode 1280 is on-level. As a result, the drive voltage corresponding to the input image signal is transmitted to the pixel electrode 1288 electrically connected to the drain electrode 1285, and the drive voltage between the pixel electrode 1288 and the counter electrode 1382 is transmitted according to the input image signal. After the voltage difference is controlled, the electric field applied to the liquid crystal molecules in the gap 1520 between the pixel electrode 1288 and the counter electrode 1382 is controlled according to the voltage difference, and the electric field is transmitted through the gap 1520 according to the applied electric field. The polarization state of the light is controlled, and the light transmittance of the pixel is controlled according to the polarization state. As a result, the light transmittance of the pixel is controlled according to the input image signal.

By controlling the light transmittance of each of the plurality of pixels in this way, an image is displayed on the liquid crystal display device 1000.

1.9 Materials of the components of the TFT substrate Each of the gate electrode 1280, the common electrode 1281, the source electrode 1284, the drain electrode 1285 and the reflection electrode 1286 is made of a conductive material, for example, aluminum (Al), silver (Ag), and copper. It is composed of a metal selected from (Cu), nickel (Ni), neodym (Nd), molybdenum (Mo), niobium (Nb) and titanium (Ti) or an alloy containing the metal as a main component.

Each of the drain electrode 1285 and the reflective electrode 1286 is an electrode that reflects light, also serves as a reflective pixel electrode, is made of a conductive material having high light reflectance, and is preferably an alloy containing aluminum, silver, or aluminum as a main component. It consists of an alloy whose main component is silver.

Each of the drain electrode 1285 and the reflection electrode 1286 may be a laminated body including a plurality of layers. In the laminate, it is also permissible that the uppermost layer contained in the plurality of layers is made of a conductive material having a high light reflectance, and the layers other than the uppermost layer contained in the plurality of layers are made of a conductive material having a low light reflectance. Is done.

The pixel electrode 1288 is an electrode that transmits light, also serves as a transmission pixel electrode, and is made of a conductive material having a high light transmittance, and is made of, for example, indium tin oxide (IZO) or indium tin oxide (ITO).

Each of the gate insulating film 1282 and the interlayer insulating film 1287 is an insulating film that transmits light and is made of an insulating material, for example, silicon oxide (SiO _x ) or silicon nitride (SiN _x ).

Each of the gate insulating film 1282 and the interlayer insulating film 1287 may be a laminated film including a plurality of films. For example, each of the gate insulating film 1282 and the interlayer insulating film 1287 may be a laminated film composed of a silicon oxide film and a silicon nitride film.

The interlayer insulating film 1287 is preferably an inorganic insulating film made of an inorganic material. Generally speaking, the inorganic material that can form the interlayer insulating film 1287 is cheaper than the organic material that can form the interlayer insulating film 1287. Therefore, when the interlayer insulating film 1287 is made of an inorganic material, the liquid crystal display device 1000 is manufactured. The cost goes down. However, if the increase in the manufacturing cost of the liquid crystal display device 1000 is within an allowable range, the interlayer insulating film 1287 may be made of an organic material.

The semiconductor film 1283 is made of a semiconductor material, for example, amorphous silicon, polysilicon or an oxide semiconductor.

1.10 Overlapping of pixel electrode and drain electrode / reflection electrode As shown in FIGS. 3 and 4, the pixel electrode 1288 is viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. It overlaps with the drain electrode 1285 and the reflective electrode 1286, preferably with substantially the entire drain electrode 1285 and the reflective electrode 1286, and more preferably overlaps with the entire drain electrode 1285 and the reflective electrode 1286. As a result, it is suppressed that the drain electrode 1285 and the reflective electrode 1286 directly face the counter electrode 1382 without sandwiching the pixel electrode 1288, and the interlayer insulating film sandwiched between the drain electrode 1285, the reflective electrode 1286 and the counter electrode 1382. The decrease in the electric field applied to the liquid crystal layer 1062 due to the presence of 1287 is suppressed, and the change in the display characteristics of the liquid crystal display device 1000 due to the decrease in the electric field is suppressed. Further, due to the presence of the interlayer insulating film 1287 sandwiched between the drain electrode 1285, the reflective electrode 1286, and the counter electrode 1382, electric charges are charged on one main surface 1540 and the other main surface 1541 of the interlayer insulating film 1287. The residual is suppressed, and the occurrence of display defects such as the afterimage phenomenon due to the residual charge is suppressed. On the contrary, when the drain electrode 1285 and the reflection electrode 1286 directly face the counter electrode 1382 without sandwiching the pixel electrode 1288, a voltage difference occurs between the drain electrode 1285 and the reflection electrode 1286 and the counter electrode 1382. In this case, an electric charge is applied to the interlayer insulating film 1287 sandwiched between the drain electrode 1285, the reflective electrode 1286, and the counter electrode 1382, the electric charge applied to the liquid crystal layer 1062 is lowered, and one main surface 1540 of the interlayer insulating film 1287 is reduced. Charges remain on the upper and other main surfaces 1541. However, if only a small portion of the drain electrode 1285 and the reflecting electrode 1286 do not overlap with the pixel electrode 1288, no significant display defect will occur. Therefore, it is permissible that a small portion of the drain electrode 1285 and the reflecting electrode 1286 do not overlap with the pixel electrode 1288. Therefore, at least one of the drain electrode 1285 and the reflection electrode 1286 may include a portion 1560 that does not overlap the pixel electrode 1288 when viewed in a plane from a direction perpendicular to the main surface 1300 of the glass substrate 1140.

1.11 Formation of auxiliary capacitance The common electrode 1281 overlaps with the drain electrode 1285 and the reflecting electrode 1286 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. Therefore, the common electrode 1281 is an auxiliary capacitance electrode that forms an auxiliary capacitance with the drain electrode 1285, and is an auxiliary capacitance electrode that forms an auxiliary capacitance with the reflecting electrode 1286. The auxiliary capacity formed between the common electrode 1281 and the drain electrode 1285 is adjusted by the area occupied by the overlap between the common electrode 1281 and the drain electrode 1285 and the thickness of the gate insulating film 1282. The auxiliary capacity formed between the common electrode 1281 and the reflective electrode 1286 is adjusted by the area occupied by the overlap between the common electrode 1281 and the reflective electrode 1286 and the thickness of the gate insulating film 1282.

When the electrical resistance of the liquid crystal layer 1062 is low and it is difficult to maintain the voltage difference between the pixel electrode 1288 and the counter electrode 1382, the auxiliary capacitance formed between the common electrode 1281 and the drain electrode 1285 and the auxiliary capacitance formed between the common electrode 1281 and the reflection electrode 1281 are reflected. The auxiliary capacity formed between the electrode 1286 and the electrode 1286 is increased. As a result, the voltage holding characteristic indicating the ability to maintain the voltage difference between the pixel electrode 1288 and the counter electrode 1382 is improved, and the display characteristic of the liquid crystal display device 1000 is improved.

1.12 Planar shape of the common electrode The common electrode 1281 includes a first portion 1580, a second portion 1581 and a third portion 1582, as shown in FIG. The first portion 1580, the second portion 1581 and the third portion 1582 are arranged in direction X.

The first portion 1580 is arranged along the linear portion 1700 extending in the direction Y of the source electrode 1284 between the second portion 1581 and the linear portion 1700 of the source electrode 1284. The distance from the first portion 1580 to the gate electrode 1280 is shorter than the distance from the second portion 1581 to the gate electrode 1280.

The third portion 1582 is along the linear portion 1700 of the source electrode 1284 provided in the pixel structure adjacent to the pixel structure 1200 of the second portion 1581 and the source electrode 1284 provided in the pixel structure adjacent to the pixel structure 1200. It is arranged between the linear portion 1700 and the linear portion. The distance from the third portion 1582 to the gate electrode 1280 is shorter than the distance from the second portion 1581 to the gate electrode 1280.

As a result, since the common electrode 1281 is brought closer to the gate electrode 1280 in the vicinity of the linear portion 1700 of the source electrode 1284, light leakage in the vicinity of the linear portion 1700 of the source electrode 1284 is suppressed by the common electrode 1281. Further, since the common electrode 1281 is kept away from the gate electrode 1280 except in the vicinity of the linear portion 1700 of the source electrode 1284, the occurrence of a short-circuit defect in which the common electrode 1281 is short-circuited with the gate electrode 1280 is suppressed. Suppression of the occurrence of short-circuit defects is particularly important when the common electrode 1281 is formed at the same time as the gate electrode 1280 in order to reduce the steps required for manufacturing the liquid crystal display device 1000. This is because when the common electrode 1281 is formed at the same time as the gate electrode 1280, the risk of short-circuit failure increases when the common electrode 1281 approaches the gate electrode 1280 in many parts.

A hollow portion 1600 is formed in the central portion of the common electrode 1281. The hollow portion 1600 is formed in the transmission region 1241. As a result, the aperture ratio of the transmission region 1241 is improved.

The common electrode 1281 has a planar shape similar to that of a combining character in which two letters "H" are arranged in the vertical direction.

1.13 Relationship between common electrode and boundary One pixel structure adjacent to the pixel structure 1200 and the pixel structure 1200 has a boundary 1620 extending in the direction Y, as shown in FIGS. 3 and 4. The third portion 1582 extends along the boundary 1620 and contacts the boundary 1620. As a result, shading in the vicinity of the boundary 1620 is performed by the third portion 1582 on the TFT substrate 1061, and the aperture ratio is improved in the direction X. The third portion 1582 contacts the main portion of the boundary 1620 that does not contact the gate electrode 1280, but is separated from the gate electrode 1280.

The pixel structure 1200 and the other pixel structure adjacent to the pixel structure 1200 have a boundary 1621 extending in the direction Y. A portion 1720 in which the common electrode 1281 extends along the boundary 1621 and contacts the boundary 1621 may be provided under the source electrode 1284. As a result, shading in the vicinity of the boundary 1621 is performed by the portion 1720 on the TFT substrate 1061, and the aperture ratio is improved in the direction X. The portion 1720 contacts the main portion of the boundary 1621 that does not contact the gate electrode 1280, but is separated from the gate electrode 1280.

1.14 Timing of formation of semiconductor film, source electrode, drain electrode and reflection electrode The semiconductor film 1283, source electrode 1284, drain electrode 1285 and reflection electrode 1286 are formed independently of each other.

It is also permissible that the semiconductor film 1283, the source electrode 1284, the drain electrode 1285 and the reflecting electrode 1286 are not formed independently of each other. When the semiconductor film 1283, the source electrode 1284, the drain electrode 1285 and the reflective electrode 1286 are not formed independently of each other, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285 and the reflective electrode 1286 are subjected to a photoresist after the continuous forming step. It is formed in one photoplate-making process using a process in which the finished film thickness of the above is in two stages.

2 Embodiment 2
The second embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

The main difference between the first embodiment and the second embodiment is that in the first embodiment, only the reflective electrode 1286 that does not overlap with the gate electrode 1280 is provided in each pixel structure 1200, but in the second embodiment, the pixel structure 1200 is provided. A reflective electrode that does not overlap with the gate electrode and a reflective electrode that overlaps with the gate electrode are provided in each pixel structure, and a reflective electrode that overlaps with the gate electrode provided in the pixel structure adjacent to each pixel structure overlaps with the gate electrode provided in each pixel structure. It is at a point continuous from the reflective electrode.

The configurations adopted in the other embodiments may be adopted in the second embodiment as long as the adoption of the configurations causing the above-mentioned major differences is not hindered.

The schematic view of FIG. 5 is a plan view illustrating the pixel structure of the second embodiment. The schematic view of FIG. 6 is a cross-sectional view illustrating the pixel structure of the second embodiment. FIG. 6 illustrates a cross section at the position of the cutting line BB illustrated in FIG. In FIGS. 5 and 6, the drawing of the alignment film provided on the TFT substrate is omitted, and the illustration of the alignment film and the coloring material provided on the CF substrate is omitted.

The pixel structure 2200 of Embodiment 2 illustrated in FIGS. 5 and 6 has an opening 2220. The opening 2220 has a first reflection region 2240, a transmission region 2241 and a second reflection region 2242. The opening 2220, the first reflection region 2240, the transmission region 2241, and the second reflection region 2242 are the opening 1220, the first reflection region 1240, the transmission region 1241 and the second reflection region 1242 of the pixel structure 1200, respectively. Can have the same technical features as.

As shown in FIGS. 5 and 6, the pixel structure 2200 includes a gate electrode 2280, a common electrode 2281, a gate insulating film 2282, a semiconductor film 2283, a source electrode 2284, a drain electrode 2285, a reflective electrode 2286, an interlayer insulating film 2287 and the like. A pixel electrode 2288 is provided. The gate electrode 2280, the common electrode 2281, the gate insulating film 2282, the semiconductor film 2283, the source electrode 2284, the drain electrode 2285, the reflective electrode 2286, the interlayer insulating film 2287, and the pixel electrode 2288 are the gate electrodes 1280 provided in the pixel structure 1200, respectively. It may have the same technical features as the common electrode 1281, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the reflecting electrode 1286, the interlayer insulating film 1287, and the pixel electrode 1288.

In the second embodiment, as illustrated in FIGS. 5 and 6, the opening 2220 further comprises a third reflection region 2243, and the pixel structure 2200 further comprises a reflection electrode 2289. The reflective electrode 2289 is arranged in the third reflective region 2243 and overlaps with the gate electrode 2280 when viewed in a plan view from a direction perpendicular to the main surface 2300 of the glass substrate 2140. The reflective electrode 2289 provided in the pixel structure 2201 adjacent to the pixel structure 2200 is continuous with the reflective electrode 2286 provided in the pixel structure 2200. The third reflection region 2243 of the pixel structure 2201 adjacent to the pixel structure 2200 is continuous with the second reflection region 242 of the pixel structure 2200.

In the cross section illustrated in FIG. 6, the pixel electrode 2288 does not overlap the gate electrode 2280. However, the pixel electrode 2288 may be replaced with a pixel electrode that overlaps the gate electrode 2280 in the cross section shown in FIG.

According to the second embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

Further, according to the second embodiment, the opening 2220 has a third reflection region 2243 in addition to the first reflection region 2240, the transmission region 2241 and the second reflection region 2242, and the area occupied by the reflection region is large. To increase.

Further, according to the second embodiment, when the reflective electrode 2289 is viewed in a plan view from a direction perpendicular to the main surface 2300 of the glass substrate 2140, it overlaps with the gate electrode 2280 and is between the reflective electrode 2289 and the gate electrode 2280. Auxiliary capacity is formed and the auxiliary capacity is increased.

3 Embodiment 3
The third embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

The main difference between the first embodiment and the third embodiment is that in the first embodiment, the light is reflected by the reflective electrode 1286 in the second reflection region 1242, but in the third embodiment, the second embodiment. It is at the point where light is reflected by the common electrode in the reflection region of.

The configurations adopted in the other embodiments may be adopted in the third embodiment as long as the adoption of the configurations causing the above-mentioned major differences is not hindered.

The schematic view of FIG. 7 is a plan view illustrating the pixel structure of the third embodiment. The schematic view of FIG. 8 is a cross-sectional view illustrating the pixel structure of the third embodiment. FIG. 8 illustrates a cross section at the position of the cutting line CC illustrated in FIG. In FIGS. 7 and 8, the drawing of the alignment film provided on the TFT substrate is omitted, and the illustration of the alignment film and the coloring material provided on the CF substrate is omitted.

The pixel structure 3200 of Embodiment 3 illustrated in each of FIGS. 7 and 8 has an opening 3220. The opening 3220 has a first reflection area 3240, a transmission area 3241 and a second reflection area 3242. The opening 3220, the first reflection region 3240, the transmission region 3241, and the second reflection region 3242 are the opening 1220, the first reflection region 1240, the transmission region 1241 and the second reflection region 1242 of the pixel structure 1200, respectively. Can have the same technical features as.

As shown in FIGS. 7 and 8, the pixel structure 3200 includes a gate electrode 3280, a common electrode 3281, a gate insulating film 3382, a semiconductor film 3283, a source electrode 3284, a drain electrode 3285, an interlayer insulating film 3287, and a pixel electrode 3288. Be prepared. The gate electrode 3280, common electrode 3281, gate insulating film 3382, semiconductor film 3283, source electrode 3284, drain electrode 3285, interlayer insulating film 3287, and pixel electrode 3288 are provided in the pixel structure 1200, respectively. It may have the same technical features as the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the interlayer insulating film 1287, and the pixel electrode 1288.

In the third embodiment, as shown in FIGS. 7 and 8, the pixel structure 3200 does not have a reflective electrode corresponding to the reflective electrode 1286, and a contact hole corresponding to the contact hole 1341 is formed in the interlayer insulating film 3287. Instead, the common electrode 3281 is arranged in the second reflection region 3242 to become an electrode that reflects light. Therefore, the common electrode 3281 has the same function as the reflective electrode 1286. An auxiliary capacitance is formed between the common electrode 3281 and the pixel electrode 3288.

The common electrode 3281 is an electrode that reflects light, also serves as a reflective pixel electrode, and is made of a conductive material having a high light reflectance, preferably aluminum, silver, an alloy containing aluminum as a main component, or silver as a main component. It consists of an alloy. It is also permitted that the common electrode 3281 is made of a metal selected from copper, nickel, neodymium, molybdenum, niobium and titanium or an alloy containing the metal as a main component.

The common electrode 3281 may be a laminated body including a plurality of layers. In the laminate, it is also permissible that the uppermost layer contained in the plurality of layers is made of a conductive material having a high light reflectance, and the layers other than the uppermost layer contained in the plurality of layers are made of a conductive material having a low light reflectance. Is done.

In the third embodiment, an electric field generated by the voltage difference between the pixel electrode 3288 and the counter electrode 1382 is applied to the liquid crystal layer 1062.

According to the third embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

Further, according to the third embodiment, the contact structure for bringing the pixel electrode 3288 into contact with the reflective electrode is eliminated, and process defects in the process of manufacturing the liquid crystal display device are less likely to occur.

4 Embodiment 4
The fourth embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

The main difference between the first embodiment and the fourth embodiment is that in the first embodiment, each pixel structure 1200 includes one gate electrode 1280 and one source electrode 1284, and one gate electrode 1280. One scanning line 1142 is formed and one source electrode 1284 constitutes one signal line 1141. However, in the fourth embodiment, each pixel structure has two gate electrodes and one source electrode. Each of the two gate electrodes constitutes two scanning lines, and one source electrode provided in each pixel structure and one source electrode provided in a pixel structure adjacent to each pixel structure are provided. It is at the point that constitutes the signal line.

The configurations adopted in the other embodiments may be adopted in the fourth embodiment as long as the adoption of the configurations causing the above-mentioned major differences is not hindered.

The schematic view of FIG. 9 is a plan view illustrating the pixel structure of the fourth embodiment.

The pixel structure 4200 of Embodiment 4 illustrated in FIG. 9 has an opening 4220. The opening 4220 has a first reflection region 4240, a transmission region 4241 and a second reflection region 4242. The opening 4220, the first reflection area 4240, the transmission area 4241 and the second reflection area 4242 are the opening 1220, the first reflection area 1240, the transmission area 1241 and the second reflection area 1242 of the pixel structure 1200, respectively. Can have the same technical features as.

As shown in FIG. 9, the pixel structure 4200 includes a gate electrode 4280, a common electrode 4281, a semiconductor film 4283, a source electrode 4284, a drain electrode 4285, a reflection electrode 4286, and a pixel electrode 4288. The pixel structure 4200 also includes a gate insulating film and an interlayer insulating film (not shown). The gate electrode 4280, the common electrode 4281, the gate insulating film, the semiconductor film 4283, the source electrode 4284, the drain electrode 4285, the reflective electrode 4286, the interlayer insulating film and the pixel electrode 4288 are the gate electrode 1280 and the common electrode provided in the pixel structure 1200, respectively. It may have the same technical features as 1281, the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the reflective electrode 1286, the interlayer insulating film 1287, and the pixel electrode 1288.

In the fourth embodiment, as illustrated in FIG. 9, the pixel structure 4200 further comprises a gate electrode 4290. The gate electrode 4290 is separated from the gate electrode 4280 in the direction Y.

The pixel structure 4200 and the pixel structure 4202 adjacent to the pixel structure 4200 are arranged in the direction X.

Each of the gate electrode 4280 provided in the pixel structure 4200 and the gate electrode 4290 provided in the pixel structure 4202 extends in the direction X. The gate electrode 4280 provided in the pixel structure 4200 and the gate electrode 4290 provided in the pixel structure 4202 are arranged in the direction X. The gate electrode 4280 provided in the pixel structure 4200 is continuous from the gate electrode 4290 provided in the pixel structure 4202 and electrically connected to the gate electrode 4290 provided in the pixel structure 4202 to form one scanning line 4148.

Each of the gate electrode 4290 provided in the pixel structure 4200 and the gate electrode 4280 provided in the pixel structure 4202 extends in the direction X. The gate electrode 4290 provided in the pixel structure 4200 and the gate electrode 4280 provided in the pixel structure 4202 are arranged in the direction X. The gate electrode 4290 provided in the pixel structure 4200 is continuous from the gate electrode 4280 provided in the pixel structure 4202 and electrically connected to the gate electrode 4280 provided in the pixel structure 4202 to form one scanning line 4149.

Therefore, the pixel structure 4200 has two scanning lines 4148 and 4149. The two scanning lines 4148 and 4149 pass through the pixel structure 4200.

Each of the source electrode 4284 provided in the pixel structure 4200 and the source electrode 4284 provided in the pixel structure 4202 extends in the direction Y. The source electrode 4284 included in the pixel structure 4200 and the source electrode 4284 included in the pixel structure 4202 are arranged in the direction X. The source electrode 4284 included in the pixel structure 4200 is arranged along the source electrode 4284 provided in the pixel structure 4202, is electrically connected to the source electrode 4284 provided in the pixel structure 4202, and is provided in the pixel structure 4202. Together with 4284, it constitutes one signal line 4150.

Therefore, the pixel structure 4200 and the pixel structure 4202 share one signal line 4150. One signal line 4150 passes through an aggregate composed of a pixel structure 4200 and a pixel structure 4202.

From these facts, in the fourth embodiment, the number of scanning lines is doubled and the number of signal lines is halved as compared with the first embodiment.

The plurality of transmission regions 4241 provided in each of the plurality of pixel structures 4200 arranged in the direction X are linearly arranged in the direction X. Therefore, the groove formed by the plurality of step layers provided in each of the plurality of pixel structures 4200 arranged in the direction X constitutes one groove extending in the direction X. Therefore, the plurality of step layers arranged in a matrix form a stripe shape. Such a step layer is easily arranged. Further, according to such a step layer, a region in which the orientation state of the liquid crystal layer is disturbed due to the presence of the step layer is suppressed to a minimum.

According to the fourth embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

Further, according to the fourth embodiment, the manufacturing cost of the liquid crystal display device is reduced. This is because integrated circuits (ICs) that drive signal lines are relatively expensive to handle analog voltages, and ICs that drive scanning lines need to have a simple circuit. This is because when the number of scanning lines is doubled and the number of signal lines is halved, the cost required for the signal lines and the IC for driving the scanning lines is reduced. Since the IC that drives the scanning line can be formed on the TFT substrate together with the TFT, wiring, and the like, it is easy to further reduce the price.

5 Embodiment 5
The fifth embodiment relates to a pixel structure that replaces the pixel structure 1360 provided in the liquid crystal display device 1000 of the first embodiment.

The main difference between the first embodiment and the fifth embodiment is that in the first embodiment, the pixel structure 1360 is provided in the transflective liquid crystal display device to block the first reflection region 1240 and the second reflection region 1242. However, in the fifth embodiment, the pixel structure is provided in the transmissive liquid crystal display device so as to block the first reflection region 1240 and the second reflection region 1242.

The configurations adopted in the other embodiments may be adopted in the fifth embodiment as long as the adoption of the configurations causing the above-mentioned major differences is not hindered.

The schematic view of FIG. 10 is a cross-sectional view illustrating the pixel structure of the fifth embodiment.

The pixel structure 5360 of the fifth embodiment illustrated in FIG. 10 includes a black matrix 5380.

An opening 5440 is formed in the black matrix 5380. The opening 5440 overlaps the transmission region 1241 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. The black matrix 5380 overlaps the first reflection region 1240 and the second reflection region 1241 when viewed in a plan view from a direction perpendicular to the main surface 1300 of the glass substrate 1140. As a result, the first reflection region 1240 and the second reflection region 1241 are shielded from light by the black matrix 5380, the reflection function is lost, and the liquid crystal display device provided with the pixel structure 5360 of the fifth embodiment becomes a transmissive liquid crystal display device. Become. As long as the main part of the first reflection area 1240 and the second reflection area 1241 is shielded by the black matrix 5380, a small part of the first reflection area 1240 and the second reflection area 1241 overlaps with the opening 5440. Is also allowed.

The pixel structure 5360 does not have to include a step layer. In the liquid crystal display device provided with the pixel structure 5360, only the thickness of the liquid crystal layer in the transmission region 1241 needs to be adjusted, so that the component for adjusting the thickness of the liquid crystal layer can be arranged at an arbitrary position. Is.

According to the fifth embodiment, the structures of the semi-transmissive liquid crystal display device and the transmissive liquid crystal display device are standardized, and the semi-transmissive liquid crystal display device and the transmissive liquid crystal display device are designed by the same method. The cost required for designing display devices and transmissive liquid crystal display devices is reduced. Further, the semi-transmissive liquid crystal display device and the transmissive liquid crystal display device are manufactured by the same method, which facilitates management at the time of manufacture.

In the present invention, each embodiment can be freely combined, and each embodiment can be appropriately modified or omitted within the scope of the invention.

6 Embodiment 6
The sixth embodiment relates to a pixel structure that replaces the pixel structure 1200 provided in the liquid crystal display device 1000 of the first embodiment.

The main difference between the first embodiment and the sixth embodiment is that in the first embodiment, the light is reflected by the drain electrode 1285 in the first reflection region 1240, but in the sixth embodiment, the first embodiment. The point is that light is reflected by the drain electrode and the common electrode in the reflection region of.

The configurations adopted in the other embodiments may be adopted in the sixth embodiment as long as the adoption of the configurations causing the above-mentioned major differences is not hindered.

The schematic view of FIG. 11 is a plan view illustrating the pixel structure of the sixth embodiment. The schematic view of FIG. 12 is a cross-sectional view illustrating the pixel structure of the sixth embodiment.

The pixel structure 6200 of Embodiment 6 illustrated in FIGS. 11 and 12 has an opening 6220. The opening 6220 has a first reflection area 6240, a transmission area 6241 and a second reflection area 6242. The opening 6220, the first reflection region 6240, the transmission region 6241, and the second reflection region 6242 are the opening 1220, the first reflection region 1240, the transmission region 1241 and the second reflection region 1242 of the pixel structure 1200, respectively. Can have the same technical features as.

As shown in FIGS. 11 and 12, the pixel structure 6200 includes a gate electrode 6280, a common electrode 6281, a gate insulating film 6282, a semiconductor film 6283, a source electrode 6284, a drain electrode 6285, an interlayer insulating film 6287, a pixel electrode 6288 and the like. A gate electrode 6290 is provided. The gate electrode 6280, common electrode 6281, gate insulating film 6282, semiconductor film 6283, source electrode 6284, drain electrode 6285, interlayer insulating film 6287, and pixel electrode 6288 are provided in the pixel structure 1200, respectively. It may have the same technical features as the gate insulating film 1282, the semiconductor film 1283, the source electrode 1284, the drain electrode 1285, the interlayer insulating film 1287, and the pixel electrode 1288.

In the sixth embodiment, as shown in FIGS. 11 and 12, the pixel structure 6200 does not have a reflective electrode corresponding to the reflective electrode 6286, and a contact hole corresponding to the contact hole 1341 is formed in the interlayer insulating film 6287. Instead, the common electrode 6281 is arranged in the second reflection region 6242 to be an electrode that reflects light. Therefore, the common electrode 6281 has the same function as the reflective electrode 1286. An auxiliary capacitance is formed between the common electrode 6281 and the pixel electrode 6288.

In addition, in embodiment 6, as illustrated in FIGS. 11 and 12, the drain electrode 6285 is located in the first partial region 6500 of the first reflection region 6240 and the common electrode 6281 is the second reflection. In addition to the region 6242, it is arranged in the second subregion 6501 of the first reflection region 6240. Each of the first subregion 6500 and the second subregion 6501 occupies a part of the first reflection region 6240. The second partial region 6501 has a portion that does not overlap with the first partial region 6500. As a result, in the sixth embodiment, light is reflected by the drain electrode 6285 and the common electrode 6281 in the first reflection region 6240.

The common electrode 6281 is an electrode that reflects light, also serves as a reflective pixel electrode, and is made of a conductive material having a high light reflectance, preferably aluminum, silver, an alloy containing aluminum as a main component, or silver as a main component. It consists of an alloy. It is also permitted that the common electrode 6281 is made of a metal selected from copper, nickel, neodymium, molybdenum, niobium and titanium or an alloy containing the metal as a main component.

The common electrode 6281 may be a laminated body including a plurality of layers. In the laminate, it is also permissible that the uppermost layer contained in the plurality of layers is made of a conductive material having a high light reflectance, and the layers other than the uppermost layer contained in the plurality of layers are made of a conductive material having a low light reflectance. Is done.

According to the sixth embodiment, as in the first embodiment, the aperture ratio of the liquid crystal display device is increased, and the display performance of the liquid crystal display device is improved.

Although the present invention has been described in detail, the above description is exemplary in all aspects and the invention is not limited thereto. It is understood that innumerable variations not illustrated can be assumed without departing from the scope of the present invention.

1000 LCD display device, 1061 thin film transistor substrate (TFT substrate), 1062 liquid crystal layer, 1063 facing substrate (CF substrate), 1141,4150 signal line, 1142,4148,4149 scanning line, 1143 TFT, 1144 common wiring, 1200,2200 , 2201, 3200, 4200, 4202, 6200 pixel structure, 1240, 2240, 3240, 4240, 6240 first reflection region, 1241,241, 3241, 4241, 6241 transmission region, 1242, 2242, 3242, 4242, 6242th 2 reflection region, 2243 third reflection region, 1280, 2280, 3280, 4280, 4290 gate electrode, 1281,2281, 3281, 4281, 6281 common electrode, 1282, 228, 3282, 628 gate insulating film, 1283, 2283 , 3283, 4283, 6283 Semiconductor film, 1284, 2284, 3284, 4284, 6284 Source electrode, 1285, 2285, 3285, 4285, 6285 Drain electrode, 1286, 2286, 2289, 4286, 6286 Reflective electrode, 1287, 2287, 3287 , 6287 Thin film transistor, 1288, 2288, 3288, 4288, 6288 pixel electrode, 1340, 1341 contact hole, 1580 first part, 1581 second part, 1582 third part, 5380 black matrix.

Claims (12)

A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
The contact hole is a first contact hole and is
A second contact hole is formed in the interlayer insulating film, and a second contact hole is formed.
The electrode that reflects light is a reflective electrode that is arranged in the same layer as the drain electrode.
The pixel electrode is a liquid crystal display device that comes into contact with the reflective electrode via the second contact hole. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
The electrode that reflects light is a common electrode that is arranged in the same layer as the gate electrode.
A liquid crystal display device in which a plurality of common electrodes provided in each of the plurality of pixel structures are electrically connected to each other. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
The electrode that reflects light is a common electrode that is arranged in the same layer as the gate electrode.
The plurality of common electrodes provided in the plurality of pixel structures are electrically connected to each other.
The drain electrode is arranged in a first partial region that occupies a part of the first reflection region.
In addition to the second reflection region, the common electrode is a liquid crystal display arranged in a second partial region having a portion that does not overlap with the first partial region and occupying a part of the first reflection region. apparatus. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
The source electrode provided in each of the pixel structures is arranged along the source electrode provided in the pixel structure adjacent to each pixel structure, and one signal is provided together with the source electrode provided in the pixel structure adjacent to each pixel structure. Make up the line,
The gate electrode is a first gate electrode and
Each pixel structure further comprises a second gate electrode.
The first gate electrode constitutes a first scanning line.
The second gate electrode is a liquid crystal display device that constitutes a second scanning line. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
Each of the pixel structures is
An auxiliary capacitance is formed with the drain electrode, and the first portion and the second portion provided in at least one of the first reflection region and the second reflection region are provided, and the first reflection region is provided. A portion is arranged along the source electrode between the second portion and the source electrode, and the distance from the first portion to the gate electrode is shorter than the distance from the second portion to the gate electrode. A liquid crystal display device further provided with an auxiliary capacitance electrode. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
A liquid crystal display device including a portion in which at least one of the drain electrode and the electrode that reflects light does not overlap with the pixel electrode when viewed in a plan view from a direction perpendicular to the main surface. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
Each of the pixel structures is
The gate electrode arranged on the main surface and
A gate insulating film placed on the main surface overlaid on the gate electrode and
A semiconductor film that is placed on the main surface of the gate insulating film and faces the gate electrode with the gate insulating film interposed therebetween.
A source electrode arranged on the main surface and in contact with the semiconductor film, and
It is arranged on the main surface, comes into contact with the semiconductor film, constitutes a thin film together with the gate electrode, the source electrode, the gate insulating film and the semiconductor film, and is arranged in the first reflection region to emit light. Reflecting drain electrode and
An interlayer insulating film formed on the main surface of the source electrode and the drain electrode so as to form a contact hole.
A pixel electrode that is superposed on the interlayer insulating film and is arranged on the main surface, contacts the drain electrode via the contact hole, and transmits light.
An electrode arranged on the main surface, arranged in the second reflection region, and reflecting light,
With
Each pixel structure further comprises a common electrode.
The plurality of common electrodes provided in the plurality of pixel structures are electrically connected to each other.
The pixel structure and the pixel structure adjacent to each pixel structure have a boundary extending in the long side direction.
The common electrode is a liquid crystal display device including a portion extending along the boundary and contacting the boundary. A substrate and a plurality of pixel structures are provided, the substrate has a main surface, the plurality of pixel structures are arranged in a matrix on the main surface, and each pixel structure which is each of the plurality of pixel structures has a rectangular shape. It has a planar shape of, and has a first reflection region, a transmission region, and a second reflection region. The first reflection region and the second reflection region reflect light, and the transmission region transmits light. The first reflection region, the transmission region and the second reflection region are arranged in the long side direction of the rectangular planar shape, and the transmission region is in the first reflection region and the second reflection region. With the thin film substrate sandwiched between
Liquid crystal layer and
A facing substrate facing the thin film substrate with the liquid crystal layer interposed therebetween
With
The opposed substrate is
An opening overlapping the transmission region is formed when viewed in a plane from a direction perpendicular to the main surface, and the first reflection region and the first reflection region are formed when viewed in a plane from a direction perpendicular to the main surface. A liquid crystal display device having a black matrix that overlaps with the reflection region of 2. The reflective electrode is a first reflective electrode and is
Each pixel structure further includes a second reflective electrode that overlaps the gate electrode when viewed in a plane from a direction perpendicular to the main surface.
The liquid crystal display device according to claim 1, wherein the second reflective electrode provided in the pixel structure adjacent to each pixel structure is continuous from the first reflective electrode provided in each pixel structure. The liquid crystal display device according to any one of claims 1 to 7, wherein each of the drain electrode and the light-reflecting electrode is made of aluminum, silver, an alloy containing aluminum as a main component, or an alloy containing silver as a main component. The auxiliary capacitance electrode further comprises a third portion.
The third portion is arranged along the source electrode provided in the pixel structure adjacent to each pixel structure, and between the second portion and the source electrode provided in the pixel structure adjacent to each pixel structure. ,
The liquid crystal display device according to claim 5, wherein the distance from the third portion to the gate electrode is shorter than the distance from the second portion to the gate electrode. The liquid crystal display device according to any one of claims 1 to 7 , wherein the pixel electrode overlaps the drain electrode and the electrode that reflects light when viewed in a plane from a direction perpendicular to the main surface.

Images