JP6644486B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device.

  One of the light sources of the light emitting device is an organic EL element. The organic EL element has a configuration in which an organic layer is disposed between a first electrode and a second electrode that are transparent electrodes. When the first electrode is a transparent electrode, a metal is often used for the second electrode. When the first electrode, the second electrode, and the organic layer are formed in a wide range, the organic EL element becomes a surface-emitting type element.

  On the other hand, in order for a person to use a mirror, it is necessary to arrange a light source around the mirror. For example, Patent Document 1 discloses that the first electrode is not formed in the central portion of the substrate, so that the central portion of the organic EL element is used as a non-light-emitting portion, and the second electrode located in the non-light-emitting portion is used as a mirror. Has been described.

  Patent Document 2 discloses that the first electrode and the organic layer are not formed in the central portion of the substrate, so that the central portion of the organic EL element is used as a non-light-emitting portion, and the second electrode located in the non-light-emitting portion is used as a mirror. Is described.

JP 2000-41807 A JP 2003-217868 A

  In the structures of Patent Documents 1 and 2, the first electrode made of a transparent electrode material is not formed at the center of the substrate. However, since the transparent electrode material has a higher resistance than a metal, the parasitic resistance of the first electrode is increased in the structures of Patent Documents 1 and 2. For this reason, the brightness of a region of the organic EL element that is far from the terminal connected to the first electrode is lower than that of the other region.

  The problem to be solved by the present invention is to improve the conductivity to the first electrode while making a part of the organic EL element function as a mirror as a non-light-emitting portion. Preventing this is an example.

The invention according to claim 1 includes a first electrode having a light transmitting property,
A second electrode having a work function smaller than the first electrode;
An organic layer located between the first electrode and the second electrode;
An intermediate layer located between the first electrode and the organic layer and electrically connected to the first electrode;
With
At least one of the intermediate layer and the second electrode has light reflectivity,
A light emitting device having a first region which does not overlap with the intermediate layer, and in which the first electrode and the second electrode overlap with each other with the organic layer interposed therebetween.

The invention according to claim 9 is a first electrode having a light transmitting property,
A second electrode having a work function smaller than the first electrode;
An organic layer located between the first electrode and the second electrode;
An intermediate layer located between the first electrode and the organic layer and having a work function smaller than that of the first electrode;
With
The first electrode and the second electrode are regions that do not overlap with the intermediate layer, and have first regions that overlap with each other,
The first region is a light emitting device smaller than the intermediate layer.

FIG. 2 is a plan view of the light emitting device according to the embodiment. It is the figure which removed the 2nd electrode from FIG. FIG. 3 is a view in which an organic layer is removed from FIG. 2. It is the figure which removed the intermediate | middle layer from FIG. It is AA sectional drawing of FIG. It is BB sectional drawing of FIG. FIG. 4 is a diagram of the light emitting device when a voltage is applied between a first electrode and a second electrode, as viewed from a second surface side of the substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and description thereof will not be repeated.

  FIG. 1 is a plan view of a light emitting device 10 according to the embodiment. FIG. 2 is a diagram in which the second electrode 130 is removed from FIG. FIG. 3 is a view in which the organic layer 120 is removed from FIG. 2, and FIG. 4 is a view in which the intermediate layer 160 is removed from FIG. FIG. 5 is a sectional view taken along line AA of FIG. 1, and FIG. 6 is a sectional view taken along line BB of FIG.

  The light emitting device 10 according to the embodiment has a first electrode 110, an organic layer 120, a second electrode 130, and an intermediate layer 160. The first electrode 110 has a property of transmitting visible light (light transmission). The organic layer 120 is located between the first electrode 110 and the second electrode 130. The second electrode 130 is formed of a material having a work function smaller than that of the first electrode 110. The intermediate layer 160 is located between the first electrode 110 and the organic layer 120, and is electrically connected to the first electrode 110. The intermediate layer 160 is formed of, for example, a material having a work function smaller than that of the first electrode 110. At least one of the intermediate layer 160 and the second electrode 130 has light reflectivity. Here, having light reflectivity means, for example, reflecting visible light. Further, the light emitting device 10 has a first region 142. The first region 142 is a region that does not overlap with the intermediate layer 160, and is a region where the first electrode 110 and the second electrode 130 overlap with each other with the organic layer 120 interposed therebetween. The details will be described below.

When the light emitting device 10 is of a bottom emission type described later, the substrate 100 is formed of a light-transmitting material such as glass or a light-transmitting resin. However, when the light emitting device 10 is of a top emission type described later, the substrate 100 may be formed of a material having no translucency. The shape of the substrate 100 is appropriately selected depending on the shape of the light emitting device 10, such as a polygon such as a rectangle or a circle. Here, the substrate 100 may have flexibility. When the substrate 100 has flexibility, the thickness of the substrate 100 is, for example, 10 μm or more and 1000 μm or less. In particular, when the substrate 100 is made of a glass material to have flexibility, the thickness of the substrate 100 is, for example, 200 μm or less. When the substrate 100 is made of a resin material to have flexibility, for example, PEN (polyethylene naphthalate), PES (polyether sulfone), PET (polyethylene terephthalate), or polyimide is included as a material of the substrate 100. Is formed. When the substrate 100 contains a resin material, an inorganic barrier film such as SiN _x or SiON is formed on at least the light-emitting surface (preferably both surfaces) of the substrate 100 in order to suppress the transmission of moisture through the substrate 100. ing. When the substrate 100 has flexibility, the substrate 100 may further include a fixing base for fixing the light emitting device 10 in a bent state.

  A light emitting unit 140 is formed on the first surface 102 of the substrate 100. The light emitting section 140 has a structure for generating light emission, for example, an organic EL element. This organic EL element has a configuration in which a first electrode 110, an organic layer 120, and a second electrode 130 are stacked in this order. The first electrode 110 is, for example, an anode, and the second electrode 130 is, for example, a cathode.

  The first electrode 110 is a transparent electrode having optical transparency. The transparent conductive material forming the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), ZnO (Zinc Oxide). is there. The thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm. The first electrode 110 is formed using, for example, a sputtering method or an evaporation method. Note that the first electrode 110 may be a carbon nanotube or a conductive organic material such as PEDOT / PSS.

  The second electrode 130 is made of, for example, a metal selected from a first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In, or an alloy of a metal selected from the first group. Includes metal layer. In this case, the second electrode 130 has a light-shielding property and reflects light from the organic layer 120. The thickness of the second electrode 130 is, for example, not less than 10 nm and not more than 500 nm. However, the second electrode 130 may be formed using the material exemplified as the material of the first electrode 110. The second electrode 130 is formed using, for example, a sputtering method or an evaporation method. The work function of the material forming the second electrode 130 is smaller than the work function of the material forming the first electrode 110.

  The organic layer 120 has, for example, a configuration in which a hole injection layer, a light emitting layer, and an electron injection layer are stacked in this order. A hole transport layer may be formed between the hole injection layer and the light emitting layer. Further, an electron transport layer may be formed between the light emitting layer and the electron injection layer. Further, the organic layer 120 may have a multi-photon structure having a plurality of light-emitting layers such as a so-called tandem structure. The organic layer 120 may be formed by an evaporation method. In addition, at least one of the organic layers 120, for example, a layer in contact with the first electrode may be formed by a coating method such as an inkjet method, a printing method, or a spray method. Note that, in this case, the remaining layers of the organic layer 120 are formed by an evaporation method. Further, all the layers of the organic layer 120 may be formed by using a coating method.

  The intermediate layer 160 is located between the first electrode 110 and the organic layer 120. Specifically, the intermediate layer 160 is in contact with the first electrode 110, and is formed of a material having a smaller work function than the first electrode 110. As this material, for example, a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, Nd, Cu, Bi, Pd, and In, or a metal selected from the first group is used. Metal layer made of an alloy of a metal. The intermediate layer 160 may be formed using the same material as the second electrode 130. In this case, since the intermediate layer 160 can be formed using the same device as the second electrode 130, the manufacturing cost of the light emitting device 10 can be reduced. The intermediate layer 160 is formed using, for example, a sputtering method or an evaporation method. The thickness of the intermediate layer 160 is, for example, 1 nm or more and 500 nm or less.

  Further, a protrusion such as a burr may be formed at the edge of the intermediate layer 160, but since the edge of the intermediate layer 160 is covered with the organic layer 120, the intermediate layer 160 is short-circuited to the second electrode 130. That is suppressed.

  In addition, there is one region where the intermediate layer 160 and the first electrode 110 overlap on the substrate 100. The intermediate layer 160 does not cover a part of the first electrode 110. In the examples shown in FIGS. 2 and 3, the first electrode 110 is substantially rectangular except for a portion that becomes the first terminal 112. The intermediate layer 160 does not cover a region of the first electrode 110 along two sides facing each other. In this region (first region 142), the first electrode 110 is in direct contact with the organic layer 120. As described later, the first region 142 of the light emitting unit 140 emits light. On the other hand, since the region overlapping the intermediate layer 160 (the second region 144) does not emit light, when the intermediate layer 160 has a thickness of, for example, 50 nm or less, the intermediate layer 160 transmits light and reflects the light on the second electrode 130. When the thickness of the intermediate layer 160 is larger than that, the intermediate layer 160 itself has light reflectivity and can be used as a mirror. In the example shown in FIGS. 1 to 6, the two first regions 142 sandwich the second region 144. However, the planar layout of the first region 142 and the second region 144 is not limited to the examples shown in FIGS.

Note that the area of the first region 142 is smaller than the area of the second region 144. In a cross section parallel to one side of the substrate 100 and passing through the center of the light emitting section 140, the width w ₁ of the first region 142 (see FIG. 5) is equal to the width w ₂ of the second region 144 (see FIG. 5), that is, the intermediate layer. 160 less than the width. Width _{w 1} is, for example, shorter than the width _{w 2.} In the example shown in FIG. 1, this cross section is substantially the same as the cross section shown in FIG. 5 or FIG.

  The edge of the first electrode 110 may be covered with an insulating layer. In this case, the insulating layer is formed of, for example, a photosensitive resin material such as polyimide, and surrounds a portion of the first electrode 110 to be a light emitting region of the light emitting unit 140. By providing the insulating layer, a short circuit between the first electrode 110 and the second electrode 130 at the edge of the first electrode 110 can be suppressed. The insulating layer is formed by applying a resin material to be an insulating layer, and then exposing and developing the resin material. This step is performed, for example, after forming the first electrode 110 and before forming the organic layer 120.

  The light emitting device 10 has a first terminal 112 and a second terminal 132. The first terminal 112 is electrically connected to the first electrode 110, and the second terminal 132 is electrically connected to the second electrode 130. In the example shown in FIGS. 1 to 4, the first terminal 112 and the second terminal 132 are arranged along the same side of the substrate 100. However, the positions of the first terminal 112 and the second terminal 132 are not limited to this. The first terminal 112 has a layer formed of the same material as the first electrode 110, and the second terminal 132 has a layer formed of the same material as the second electrode 130. . In other words, the first terminal 112 is integrated with the first electrode 110, and the second terminal 132 is integrated with the second electrode 130.

  The light emitting section 140 is sealed by a sealing section (not shown). The sealing portion is formed using, for example, a metal such as glass or aluminum, or a resin, and has a shape in which a concave portion is provided in the center. The edge of the sealing portion is fixed to the substrate 100 or a film formed thereon by an adhesive. Thus, the space surrounded by the sealing portion and the substrate 100 is sealed. The light emitting section 140 is located in the sealed space.

The sealing section may be a sealing film. The sealing film is formed using, for example, an ALD (Atomic Layer Deposition) method. In this case, the step coverage of the sealing film is increased. In this case, the sealing film may have a multilayer structure in which a plurality of layers are stacked. In this case, it may have a structure in which a first sealing layer made of a first material (for example, aluminum oxide) and a second sealing layer made of a second material (for example, titanium oxide) are repeatedly laminated. . The lowermost layer may be either the first sealing layer or the second sealing layer. Also, the uppermost layer may be either the first sealing layer or the second sealing layer. Further, the sealing film may be a single layer in which the first material and the second material are mixed. However, the sealing film may be formed using another film formation method, for example, a CVD method or a sputtering method. In this case, the sealing film is formed of an insulating film such as SiO ₂ or SiN, and has a thickness of, for example, 10 nm or more and 1000 nm or less.

  In the examples shown in FIGS. 1 to 6, the first region 142 of the light emitting device 10 is a bottom emission type organic EL element. However, the first region 142 may be a top emission type organic EL element. In this case, light emission from the light emitting device 10 is performed without transmitting through the substrate 100. When the first region 142 is a top emission type organic EL element, the stacking order of the first electrode 110 and the second electrode 130 is opposite to that of the bottom emission type. That is, the second electrode 130, the organic layer 120, the intermediate layer 160, and the first electrode 110 are stacked on the substrate 100 in this order. However, the configuration of the organic EL element is not limited to the above two examples.

  Next, a method for manufacturing the light emitting device 10 will be described. First, the first electrode 110 is formed on the substrate 100. In this step, the first terminals 112 are also formed. Next, the intermediate layer 160, the organic layer 120, and the second electrode 130 are formed in this order. Next, the light emitting unit 140 is sealed using the sealing unit.

  After that, a conductive member (for example, a bonding wire, a lead member, or a flexible printed circuit (FPC)) is connected to the first terminal 112 and the second terminal 132.

  FIG. 7 illustrates the light emitting device 10 when a voltage is applied between the first electrode 110 and the second electrode 130 as viewed from the second surface 104 side of the substrate 100 (that is, the surface opposite to the light emitting unit 140). FIG. In the first region 142 of the light emitting section 140, no intermediate layer 160 is formed between the first electrode 110 and the organic layer 120. Therefore, the organic layer 120 in the first region 142 emits light.

  On the other hand, in the second region 144, the intermediate layer 160 is located between the first electrode 110 and the organic layer 120. The work function of the intermediate layer 160 is smaller than that of the first electrode 110. Therefore, the injection barrier of carriers (holes) between the intermediate layer 160 and the organic layer 120 is increased, and as a result, almost no carriers are injected from the intermediate layer 160 into the organic layer 120. Therefore, the organic layer 120 located in the second region 144 hardly emits light. Further, the intermediate layer 160 reflects visible light. Therefore, the second region 144 functions as a mirror.

  As described above, the light emitting device 10 has a configuration in which the first region 142 which is a light emitting element is arranged on both sides of the second region 144 which is a mirror. Further, no opening is formed in the first electrode 110, and an intermediate layer 160 is formed on the first electrode 110. Therefore, the parasitic resistance of the first electrode 110 is reduced, and as a result, it is possible to suppress the occurrence of distribution in the luminance of the first region 142.

  The shape of the first region 142 and the second region 144 can be changed by changing the pattern of the shape of the intermediate layer 160. Therefore, the shapes of the first region 142 and the second region 144 can be easily changed.

  Further, since the second region 144 does not emit light, the second region 144 also functions as a heat radiating unit that radiates heat generated in the first region 142. Therefore, it is possible to suppress an increase in the temperature of the first region 142, the light emitting unit 140, and the light emitting device 10.

  Note that, as described above, the second electrode 130 is formed using a material that reflects light. Therefore, when the second electrode 130 is formed outside the light emitting unit 140, a portion of the second electrode 130 located outside the light emitting unit 140 can be used as a mirror.

  Further, the intermediate layer 160 may have a configuration in which a first layer made of a conductive material that reflects light and a second layer made of an insulating material are stacked. In this case, it is not necessary to limit the work function of the conductive material forming intermediate layer 160. The second layer may or may not transmit light. Further, the second layer may be formed by treating (for example, oxidizing or reducing) the surface of the first layer. Further, when the first layer is formed by introducing an impurity into a semiconductor material, the second layer may be formed by introducing an impurity of a reverse conductivity type into a surface layer of the first layer.

  As described above, the embodiments and examples have been described with reference to the drawings. However, these are merely examples of the present invention, and various configurations other than the above can be adopted.

Reference Signs List 10 light emitting device 100 substrate 110 first electrode 120 organic layer 130 second electrode 140 light emitting section 142 first region 144 second region 160 intermediate layer

Claims (6)

A first electrode having optical transparency;
A second electrode having a work function smaller than the first electrode;
An organic layer located between the first electrode and the second electrode;
An intermediate layer located between the first electrode and the organic layer and electrically connected to the first electrode;
With
A work function of the intermediate layer is smaller than a work function of the first electrode;
At least one of the intermediate layer and the second electrode has light reflectivity,
A first region in which the first electrode and the second electrode overlap each other with the organic layer interposed therebetween, and
The first region is located on both sides of the intermediate layer,
The intermediate layer is rectangular at least in a portion overlapping the first electrode,
The intermediate layer is continuous between the first regions;
A width of the first region is smaller than a width of the intermediate layer;
The light emitting device, wherein the first region is smaller than an area of a portion where the intermediate layer and the first electrode overlap. The light emitting device according to claim 1,
The light emitting device, wherein the intermediate layer contains Al or Ag. The light emitting device according to claim 2,
A light emitting device wherein the thickness of the intermediate layer is 1 nm or more and 500 nm or less. The light-emitting device according to any one of claims 1 to 3,
A light emitting device comprising one region where the intermediate layer and the first electrode overlap. The light emitting device according to any one of claims 1 to 4 ,
The second electrode is a light emitting device that reflects light. A first electrode having optical transparency;
A second electrode having a work function smaller than the first electrode;
An organic layer located between the first electrode and the second electrode;
An intermediate layer located between the first electrode and the organic layer and having a work function smaller than that of the first electrode;
With
The first electrode and the second electrode are regions that do not overlap with the intermediate layer, and have first regions that overlap with each other,
The first region is smaller than the intermediate layer;
The first region is located on both sides of the intermediate layer,
The intermediate layer is rectangular at least in a portion overlapping the first electrode,
The intermediate layer is continuous between the first regions;
A width of the first region is smaller than a width of the intermediate layer;
The light emitting device, wherein the first region is smaller than an area of a portion where the intermediate layer and the first electrode overlap.

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