JP6047298B2 - Capacitance type input device manufacturing method, capacitance type input device, and image display apparatus including the same - Google Patents

Description

  The present invention relates to a method for manufacturing a capacitance-type input device capable of detecting a contact position of a finger as a change in capacitance, a capacitance-type input device obtained by the method, and the capacitance-type device The present invention relates to an image display device including an input device as a component.

  In recent years, electronic devices such as mobile phones, car navigation systems, personal computers, ticket vending machines, and bank terminals have been equipped with a tablet-type input device on the surface of a liquid crystal device, etc., and an instruction image displayed in the image display area of the liquid crystal device In some cases, information corresponding to the instruction image can be input by touching a part where the instruction image is displayed with a finger or a touch pen.

  Such input devices (touch panels) include a resistance film type and a capacitance type. However, the resistance film type input device has a drawback that it has a narrow operating temperature range and is susceptible to changes over time because it has a two-layer structure of film and glass that is shorted by pressing the film.

  On the other hand, the capacitance-type input device has an advantage that a light-transmitting conductive film is simply formed on a single substrate. In such a capacitance-type input device, for example, electrode patterns are extended in directions intersecting each other, and when a finger or the like comes into contact, the capacitance between the electrodes is detected to detect the input position. (For example, refer to Patent Document 1 below).

  In addition, as an electrostatic capacitance type input device, an alternating current of the same phase and the same potential is applied to both ends of the translucent conductive film to detect a weak current flowing when a capacitor is formed in contact with or close to a finger. Some types detect the input position. As such a capacitive input device, a plurality of first transparent electrode patterns and a plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connecting portions. And a plurality of second transparent electrode patterns comprising a plurality of pad portions formed to extend in a direction crossing the first direction and electrically insulated via an interlayer insulating layer An input device is disclosed (for example, see Patent Document 2 below).

  Furthermore, a capacitive touch panel is disclosed in which a mask layer, a sense circuit, and an interlayer insulating layer are integrally formed on the non-contact side surface of the front plate (see, for example, Patent Document 3 below). Such a mask layer is provided so as to cover the wiring around the electrodes formed in the peripheral portion of the transparent substrate and the signal processing connection portion from the viewing side. The manufacturing method is not described.

In Patent Document 4, a light shielding film containing a black pigment is provided on the non-contact side surface of a front plate, and after forming an ITO transparent electrode pattern on the light shielding film, a dielectric film or a protective film is formed on the transparent electrode pattern. As an example, a capacitive touch panel provided with a SiO ₂ film is described, and a lamination mode and a manufacturing method are described.

In Patent Document 5, a BM insulating layer having an insulating property as a black mask portion is used as a black mask portion, and after forming a transparent electrode pattern thereon, an SiO ₂ film is provided as a protective film on the transparent electrode pattern. A capacitive touch panel is described, and a lamination mode and a manufacturing method are described.

JP 2007-122326 A Japanese Patent No. 4506785 JP 2009-193587 A JP 2011-186717 A JP 2011-90443 A

When this inventor examined the performance of the electrostatic capacitance type touch panel using the black mask layer of patent documents 3-5 as a decorating material, transparent electrodes, such as ITO, directly on such a black material It has been found that when a pattern is formed, a problem of increasing the resistance of a transparent electrode such as ITO and a problem of poor insulation between patterned transparent electrodes such as ITO occur.
In Patent Documents 3 and 4, this problem is not addressed, and no improvement method is described.

  In Patent Document 5, it has been proposed to impart insulation to the black material itself. However, since it is necessary to use an expensive material such as titanium black, it has been found that further improvement is required.

  An object of the present invention is to provide a method for manufacturing a capacitive input device that can suppress the resistance of a transparent electrode pattern provided on a mask layer, has good insulation between the transparent electrode patterns, and is inexpensive. is there.

  As a result of intensive studies by the present inventor in order to solve the above problems, by forming an inorganic insulating film between the mask layer and the transparent electrode pattern, the insulation on the surface of the mask layer is improved and the ITO formed on the mask layer It was possible to suppress the resistance of the transparent electrode pattern (improvement of conductivity), and it was possible to manufacture a capacitive input device that operates well as a touch panel.

[1] A method of manufacturing a capacitance-type input device having at least the following elements (1) to (5) on the front plate and the non-contact side of the front plate, the following mask layer, the following first and A method for manufacturing a capacitance-type input device comprising a step of providing an inorganic insulating layer between second transparent electrode patterns.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern In the method for manufacturing a capacitive input device according to [2] [1], which is different from the second transparent electrode pattern, the inorganic insulating layer is preferably a SiO ₂ film.
[3] In the method for manufacturing a capacitive input device according to [1] or [2], the inorganic insulating layer preferably has a thickness of 5 to 100 nm.
[4] In the method of manufacturing a capacitive input device according to any one of [1] to [3], at least one of the elements (1) to (5) may include a temporary support and light. It is preferable to form using a photosensitive film having a curable resin layer.
[5] In the method for manufacturing a capacitive input device according to [4], the photosensitive film may include the temporary support, the thermoplastic resin layer, and the photocurable resin layer in this order. preferable.
[6] The method for manufacturing a capacitive input device according to any one of [1] to [5] includes a step of heat-treating at 150 to 350 ° C. after forming the first transparent electrode pattern. It is preferable to include.
[7] In the method for manufacturing a capacitive input device according to any one of [1] to [6], the mask layer is preferably a black mask layer.
[8] In the method for manufacturing a capacitive input device according to [7], it is preferable that the black mask layer contains carbon black or graphite.
[9] A capacitance-type input device manufactured by the method for manufacturing a capacitance-type input device according to any one of [1] to [8].
[10] An image display device comprising the capacitive input device according to [9] as a constituent element.

  According to the present invention, the capacitance of the transparent electrode pattern provided on the mask layer can be suppressed, the insulation between the transparent electrode patterns is good, and an inexpensive capacitive input device can be manufactured. It is possible to provide a method for manufacturing a type input device, a capacitance type input device obtained by the method, and an image display device using the capacitance type input device.

It is sectional drawing which shows the structure of the electrostatic capacitance type input device of this invention. It is explanatory drawing which shows an example of the front plate in this invention. It is explanatory drawing which shows an example of the 1st transparent electrode pattern in this invention, and a 2nd transparent electrode pattern. It is a top view which shows an example of the tempered glass in which the opening part was formed. It is a top view which shows an example of the front board in which the mask layer was formed. It is a top view which shows an example of the front plate in which the 1st transparent electrode pattern was formed. It is a top view which shows an example of the front plate in which the 1st and 2nd transparent electrode pattern was formed. It is a top view which shows an example of the front plate in which the electroconductive element different from the 1st and 2nd transparent electrode pattern was formed. It is explanatory drawing which shows a metal nanowire cross section.

  Hereinafter, a method for manufacturing a capacitive input device, a capacitive input device, and an image display device of the present invention will be described.

[Method for Manufacturing Capacitive Input Device]
The method for manufacturing a capacitive input device of the present invention (hereinafter sometimes simply referred to as “the manufacturing method of the present invention”) includes at least the following (1) to (1) to the front plate and the non-contact side of the front plate. A method for manufacturing a capacitance-type input device having the element (5), comprising: the following mask layer; and at least a portion of the following first and second transparent electrode patterns disposed on the surface of the mask layer It includes a step of providing an inorganic insulating layer between the transparent electrode pattern.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern Conductive element separate from the second transparent electrode pattern

  First, the configuration of a capacitive input device formed by the manufacturing method of the present invention will be described. FIG. 1 is a cross-sectional view showing a configuration of a capacitive input device of the present invention. In FIG. 1, a capacitive input device 10 includes a front plate 1, a mask layer 2, an inorganic insulating layer 13 provided between the mask layer and the second transparent electrode pattern 4, and a first transparent The electrode pattern 3, the second transparent electrode pattern 4, the insulating layer 5, the conductive element 6, and the transparent protective layer 7 are configured.

  The front plate 1 is composed of a light-transmitting substrate such as a glass substrate, and tempered glass represented by Corning gorilla glass can be used. Moreover, in FIG. 1, the side in which each element of the front layer 1 is provided is called a non-contact surface. In the capacitive input device 10 of the present invention, input is performed by bringing a finger or the like into contact with the contact surface (the surface opposite to the non-contact surface) of the front plate 1. Hereinafter, the front plate may be referred to as a “base material”.

A mask layer 2 is provided on the non-contact surface of the front plate 1. The mask layer 2 is a frame-shaped pattern around the display area formed on the non-contact side of the front panel of the touch panel, and is formed so that the lead wiring and the like cannot be seen.
As shown in FIG. 2, the capacitive input device 10 of the present invention is provided with a mask layer 2 so as to cover a part of the front plate 1 (a region other than the input surface in FIG. 2). Yes. Further, the front plate 1 can be provided with an opening 8 in part as shown in FIG. A mechanical switch by pressing can be installed in the opening 8.

On the contact surface of the front plate 1, a plurality of first transparent electrode patterns 3 formed by extending a plurality of pad portions in the first direction via connection portions; A plurality of second transparent electrode patterns 4 made of a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction, the first transparent electrode pattern 3 and the second An insulating layer 5 that electrically insulates the transparent electrode pattern 4 is formed. The first transparent electrode pattern 3, the second transparent electrode pattern 4, and the conductive element 6 to be described later are, for example, translucent conductive materials such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide). It can be made of a conductive metal oxide film. Examples of such metal films include ITO films; metal films such as Al, Zn, Cu, Fe, Ni, Cr, and Mo; metal oxide films such as SiO ₂ . At this time, the film thickness of each element can be 10 to 200 nm. In addition, since the amorphous ITO film is made into a polycrystalline ITO film by firing, the electrical resistance can be reduced. Details of a preferable mode in that case will be described later. Moreover, said 1st transparent electrode pattern 3, the 2nd transparent electrode pattern 4, and the electroconductive element 6 mentioned later use the photosensitive film which has the photocurable resin layer using the said conductive fiber. It can also be manufactured. In addition, when forming the 1st and 2nd transparent electrode pattern etc. by ITO etc., paragraphs [0014]-[0016] etc. of patent 4506785 gazette can be referred.

  In the method for manufacturing a capacitance-type input device of the present invention, the second transparent electrode pattern 4 is a region on both the non-contact surface of the front plate 1 and the surface opposite to the front plate 1 of the black mask layer 2. (It is preferable that the black mask layer is in contact with the surface opposite to the front plate through an inorganic insulating layer). In FIG. 1, the second transparent electrode pattern 4 is opposite to the non-contact surface of the front plate 1 and the front plate 1 of the mask layer 2 through the inorganic insulating layer 13 disposed between the mask layer 2 and the second transparent electrode pattern 4. The figure is shown installed across both areas of the side surface.

  As shown in FIG. 1, the inorganic insulating layer 13 has a mask layer and at least a portion of the transparent electrode pattern of the following first and second transparent electrode patterns disposed on the surface of the mask layer. The mask layers 2 are preferably laminated on all surfaces in contact with the transparent electrode pattern. Further, as shown in FIG. 1, the inorganic insulating layer 13 may also be formed on a portion of the non-contact surface of the front plate 1 where the mask layer 2 is not formed.

  The thickness of the inorganic insulating layer 13 is not particularly limited, but is preferably 5 to 100 nm, more preferably 10 to 80 nm, and particularly preferably 5 to 60 nm. When it is at least the above lower limit value, the effect of improving the insulation of the black mask layer is sufficiently obtained, and the effect of improving the conductivity of the first transparent electrode pattern is sufficiently obtained. When the amount is not more than the above upper limit value, the time for forming the inorganic insulating layer can be shortened, and the productivity of the capacitive input device is improved.

Further, the first transparent electrode pattern 3 may be installed across both the non-contact surface of the front plate 1 and the surface of the mask layer 2 opposite to the front plate 1.
As described above, even when a photosensitive film is laminated across the mask layer that requires a certain thickness and the back surface of the front plate, expensive equipment such as a vacuum laminator can be used by using the photosensitive film described later. However, it is possible to perform lamination without generating bubbles at the boundary of the mask portion with a simple process.

  The first transparent electrode pattern 3 and the second transparent electrode pattern 4 will be described with reference to FIG. FIG. 3 is an explanatory diagram showing an example of the first transparent electrode pattern and the second transparent electrode pattern in the present invention. As shown in FIG. 3, the first transparent electrode pattern 3 is formed such that the pad portion 3a extends in the first direction via the connection portion 3b. The second transparent electrode pattern 4 is electrically insulated by the first transparent electrode pattern 3 and the insulating layer 5 and extends in a direction intersecting the first direction (second direction in FIG. 3). It is constituted by a plurality of pad portions that are formed. Here, when the first transparent electrode pattern 3 is formed, the pad portion 3a and the connection portion 3b may be manufactured as one body, or only the connection portion 3b is manufactured and the pad portion 3a and the second portion 3b are formed. The transparent electrode pattern 4 may be integrally formed (patterned). When the pad portion 3a and the second transparent electrode pattern 4 are manufactured (patterned) as a single body (patterning), as shown in FIG. Each layer is formed so that the first transparent electrode pattern 3 and the second transparent electrode pattern 4 are electrically insulated by 5.

  In FIG. 1, a conductive element 6 is provided on the surface of the mask layer 2 opposite to the front plate 1. The conductive element 6 is electrically connected to at least one of the first transparent electrode pattern 3 and the second transparent electrode pattern 4, and is different from the first transparent electrode pattern 3 and the second transparent electrode pattern 4. Is another element. In FIG. 1, a view in which the conductive element 6 is connected to the second transparent electrode pattern 4 is shown.

  Moreover, in FIG. 1, the transparent protective layer 7 is installed so that all of each component may be covered. The transparent protective layer 7 may be configured to cover only a part of each component. The insulating layer 5 and the transparent protective layer 7 may be made of the same material or different materials. The material constituting the insulating layer 5 and the transparent protective layer 7 is preferably a material having high surface hardness and high heat resistance, and a known photosensitive siloxane resin material, acrylic resin material, or the like is used.

In the production method of the present invention, it is preferable that at least one of the elements (1) to (5) is formed using a photosensitive film having a temporary support and a photocurable resin layer. Among them, at least the black mask layer 2, the first transparent electrode pattern 3, the second transparent electrode pattern 4, the insulating layer 5, the conductive element 6, and the transparent protective layer 7 as necessary. More preferably, the one element is formed using the photosensitive film having a temporary support, a thermoplastic resin layer, and a photocurable resin layer in this order.
The mask layer 2, the insulating layer 5 and the transparent protective layer 7 can be formed by transferring a photocurable resin layer to the front plate 1 using the photosensitive film. For example, when the black mask layer 2 is formed, the black photocurable resin is formed on the surface of the front plate 1 using the photosensitive film having a black photocurable resin layer as the photocurable resin layer. It can be formed by transferring the layer. When the insulating layer 5 is formed, the photosensitive film having an insulating photo-curable resin layer as the photo-curable resin layer is used to form the front of the first or second transparent electrode pattern. It can be formed by transferring the photocurable resin layer to the surface of the face plate 1. When the transparent protective layer 7 is formed, the light is applied to the surface of the front plate 1 on which each element is formed using the photosensitive film having a transparent photocurable resin layer as the photocurable resin layer. It can be formed by transferring a curable resin layer.

When the mask layer 2 or the like is formed by using the photosensitive film, there is no resist component leakage from the opening even on the substrate (front plate) having an opening, and it is necessary to form a light-shielding pattern from the opening to the boundary of the front plate. Since there is no protrusion of the resist component from the glass edge in the mask layer, it is possible to manufacture a touch panel having a merit of thin layer / light weight by a simple process without contaminating the back side of the substrate.
Furthermore, in the formation of the mask layer 2 that needs light shielding properties, the photosensitive film having the specific layer structure including the thermoplastic resin layer between the photocurable resin layer and the temporary support is used. Generation of bubbles during lamination can be prevented, and a high-quality mask layer 2 and the like having no light leakage can be formed.

Said 1st transparent electrode pattern 3, the 2nd transparent electrode pattern 4, and the electroconductive element 6 can be formed using the said photosensitive film which has an etching process or a conductive photocurable resin layer.
When the first transparent electrode pattern 3, the second transparent electrode pattern 4, and another conductive element 6 are formed by etching treatment, first, the non-contact surface of the front plate 1 on which the black mask layer 2 and the like are formed An inorganic insulating layer is provided at least on the portion where the black mask layer 2 is provided, and a transparent electrode layer such as ITO is formed on the non-contact surface of the front plate 1 or on the inorganic insulating layer by sputtering. Next, an etching pattern is formed by exposure and development using the photosensitive film having an etching photocurable resin layer as the photocurable resin layer on the transparent electrode layer. Thereafter, the transparent electrode layer is etched to pattern the transparent electrode, and the etching pattern is removed, whereby the first transparent electrode pattern 3 and the like can be formed.

When forming the first transparent electrode pattern 3, the second transparent electrode pattern 4, and another conductive element 6 using the photosensitive film having a conductive photocurable resin layer, the front plate 1 Formed by providing at least an inorganic insulating layer on the surface where the black mask layer 2 is provided, and transferring the conductive photocurable resin layer onto the non-contact surface of the front plate 1 or onto the inorganic insulating layer. can do.
When the first transparent electrode pattern 3 or the like is formed using a photosensitive film having the conductive photocurable resin layer, there is no leakage of resist components from the opening portion even on a substrate (front plate) having an opening portion. Without contaminating the back side of the substrate, it is possible to manufacture a touch panel having a merit of thin layer / light weight by a simple process.
Further, the first transparent electrode pattern 3 and the like are formed by using the photosensitive film having a specific layer structure including a thermoplastic resin layer between the conductive photocurable resin layer and the temporary support. The generation of bubbles during laminating of the conductive film can be prevented, and the first transparent electrode pattern 3, the second transparent electrode pattern 4, and another conductive element 6 having excellent conductivity and low resistance can be formed.

  Examples of embodiments formed in the course of the production method of the present invention include the embodiments of FIGS. FIG. 4 is a top view illustrating an example of the tempered glass 11 in which the opening 8 is formed. FIG. 5 is a top view showing an example of the front plate on which the mask layer 2 is formed. FIG. 6 is a top view showing an example of the front plate on which the first transparent electrode pattern 3 is formed. FIG. 7 is a top view showing an example of a front plate on which the first transparent electrode pattern 3 and the second transparent electrode pattern 4 are formed. FIG. 8 is a top view showing an example of a front plate on which conductive elements 6 different from the first and second transparent electrode patterns are formed. These show examples embodying the above description, and the scope of the present invention is not limitedly interpreted by these drawings.

<< Step of providing an inorganic insulating layer >>
The process of providing an inorganic insulating layer between the black mask layer and the first transparent electrode pattern in the production method of the present invention will be described.
In the manufacturing method of the present invention, a plurality of pad portions are formed on the black mask layer so as to extend in the first direction via connection portions, and the non-contact surface of the front plate and the mask layer Without directly providing a plurality of first transparent electrode patterns installed across both regions on the surface opposite to the front plate, an inorganic material is provided between the black mask layer and the first transparent electrode pattern. An insulating layer is provided. With such a configuration, the resistance of the transparent electrode pattern provided on the black mask layer can be suppressed, the insulation between the transparent electrode patterns is good, and an inexpensive capacitive input device manufacturing method is provided. be able to.

Although there is no restriction | limiting in particular as a manufacturing method of the said inorganic insulating layer, It can form into a film by sputtering method or a vapor deposition method. Specifically, for example, it can be formed by a direct current magnetron sputtering method using silicon as a target, the degree of vacuum is preferably 0.15 to 0.27 Pa, and the flow rate of Ar gas is 250 to 1000 sccm. The flow rate of O ₂ gas is preferably 40 to 160 sccm.

There is no particular restriction on the composition of the inorganic insulating layer is preferably SiO _2.

The mask layer surface resistance after forming the inorganic insulating layer (that is, the surface resistance of the inorganic insulating film in the portion where the inorganic insulating layer of the black mask layer is formed) is 1.0 × 10 ¹¹ Ω / □. Preferably, it is 1.0 × 10 ¹² Ω / □ or more, and more preferably 1.0 × 10 ¹³ Ω / □ or more.

<< Process for Manufacturing Elements (1) to (5) >>
Next, a process of manufacturing at least the elements (1) to (5) on the non-contact side of the front plate will be described.

The method for manufacturing a capacitance-type input device of the present invention preferably includes a step of heat-treating at 150 to 350 ° C. after forming the first transparent electrode pattern, and the temperature of the heat-treatment step is 200 to 300 ° C. More preferably, it is 220-280 degreeC. By performing heat treatment at such a temperature, the crystallinity of the transparent electrode pattern can be enhanced.
The first transparent electrode pattern is preferably an ITO transparent electrode pattern. In this case, in particular, the crystallization of ITO is promoted, and the electrical resistance is reduced by using an amorphous ITO film as a polycrystalline ITO film. Therefore, it is preferable to perform the heat treatment at such a high temperature. Such heat treatment is also referred to as firing or annealing.

  A conductive layer such as an ITO film used for such a transparent electrode pattern can be formed using a sputtering method or a photosensitive film described later. The transparent electrode pattern is preferably formed by patterning the formed ITO film by development such as photolithography and etching.

  After forming the inorganic insulating layer in this way, the surface resistance of the first transparent electrode pattern formed on the inorganic insulating layer (that is, the first in the portion of the black mask layer where the inorganic insulating layer is formed). The surface resistance of the transparent electrode pattern is preferably 300Ω or less, more preferably 200Ω / □ or less, and particularly preferably 150Ω or less.

In addition, it is also preferable to perform the heat treatment in the above range after the second transparent electrode pattern is formed. Moreover, about the manufacturing method of said 2nd transparent electrode pattern, a preferable aspect of a composition and a physical property, it is the same as that of said 1st transparent electrode pattern.
In addition, you may perform the said heat processing at once, after forming both said 1st transparent electrode pattern and said 2nd transparent electrode pattern.

In the manufacturing method of this invention, it is preferable that the process of manufacturing the said element of (1)-(5) is a process of manufacturing using the said photosensitive film.
Hereinafter, a method for producing the elements (1) to (5) using the photosensitive film will be described.

<Configuration of photosensitive film>
The said photosensitive film used for the manufacturing method of this invention is demonstrated. The photosensitive film preferably has a temporary support and a photocurable resin layer, and preferably has a thermoplastic resin layer between the temporary support and the photocurable resin layer. When a mask layer or the like is formed using the photosensitive film having the thermoplastic resin layer, the photocurable resin layer is transferred compared to the case where the photosensitive film not having the thermoplastic resin layer is used. Bubbles are hardly generated in the formed element, image unevenness and the like are hardly generated in the image display device, and excellent display characteristics can be obtained.
The photosensitive film used in the production method of the present invention may be a negative type material or a positive type material.

(Temporary support)
As the temporary support, a material that is flexible and does not cause significant deformation, shrinkage, or elongation under pressure or under pressure and heating can be used. Examples of such a support include a polyethylene terephthalate film, a cellulose triacetate film, a polystyrene film, and a polycarbonate film, and among them, a biaxially stretched polyethylene terephthalate film is particularly preferable.

There is no restriction | limiting in particular in the thickness of a temporary support body, The range of 5-200 micrometers is common, and the range of 10-150 micrometers is especially preferable at points, such as handleability and versatility.
Further, the temporary support may be transparent or may contain dyed silicon, alumina sol, chromium salt, zirconium salt or the like.
The temporary support can be imparted with conductivity by the method described in JP-A-2005-221726.

(Thermoplastic resin layer)
The photosensitive film is preferably provided with a thermoplastic resin layer between the temporary support and the colored photosensitive resin layer. The thermoplastic resin layer is preferably alkali-soluble. The thermoplastic resin layer plays a role as a cushioning material so as to be able to absorb irregularities on the underlying surface (including irregularities due to images already formed, etc.). It is preferable to have a property that can be deformed.

  The thermoplastic resin layer preferably includes an organic polymer substance described in JP-A-5-72724 as a component. The Vicat method [specifically, a polymer by American Material Testing Method ASTM D1235] An embodiment containing at least one selected from organic polymer substances having a softening point of about 80 ° C. or less according to the softening point measurement method] is particularly preferable.

  Specifically, polyolefins such as polyethylene and polypropylene, ethylene copolymers with ethylene and vinyl acetate or saponified products thereof, copolymers of ethylene and acrylic acid esters or saponified products thereof, polyvinyl chloride and vinyl chloride, Vinyl chloride copolymer with vinyl acetate or saponified product thereof, polyvinylidene chloride, vinylidene chloride copolymer, polystyrene, styrene copolymer with styrene and (meth) acrylic acid ester or saponified product thereof, polyvinyl toluene, Vinyl toluene copolymer of vinyl toluene and (meth) acrylic acid ester or saponified product thereof, poly (meth) acrylic acid ester, (meth) acrylic acid ester copolymer weight of butyl (meth) acrylate and vinyl acetate, etc. Coalescence, vinyl acetate copolymer nylon, copolymer nylon, - alkoxymethyl nylon, and organic polymers such as polyamide resins such as N- dimethylamino nylon.

  The layer thickness of the thermoplastic resin layer is preferably 3 to 30 μm. When the thickness of the thermoplastic resin layer is less than 3 μm, followability at the time of lamination may be insufficient, and unevenness on the base surface may not be completely absorbed. In addition, when the layer thickness exceeds 30 μm, a load is applied to drying (solvent removal) at the time of forming the thermoplastic resin layer on the temporary support, or it takes time to develop the thermoplastic resin layer, May deteriorate process suitability. The layer thickness of the thermoplastic resin layer is more preferably 4 to 25 μm, and particularly preferably 5 to 20 μm.

  The thermoplastic resin layer can be formed by applying a preparation liquid containing a thermoplastic organic polymer, and the preparation liquid used for the application can be prepared using a solvent. The solvent is not particularly limited as long as it can dissolve the polymer component constituting the layer, and examples thereof include methyl ethyl ketone, cyclohexanone, propylene glycol monomethyl ether acetate, n-propanol, and 2-propanol.

(Photocurable resin layer)
The said photosensitive film adds an additive to a photocurable resin layer according to the use. That is, when using the said photosensitive film for formation of a mask layer, a coloring agent is contained in a photocurable resin layer. Moreover, when the said photosensitive film has an electroconductive photocurable resin layer, an electroconductive fiber etc. contain in the said photocurable resin layer.

  When the photosensitive film is a negative type material, the photocurable resin layer preferably contains an alkali-soluble resin, a polymerizable compound, a polymerization initiator, or a polymerization initiation system. In addition, colorants, additives, and the like are used, but are not limited thereto.

As the alkali-soluble resin contained in the photosensitive film, polymers described in paragraph [0025] of JP2011-95716A and paragraphs [0033] to [0052] of JP2010-237589A are used. it can.
As the polymerizable compound, the polymerizable compounds described in paragraphs [0023] to [0024] of Japanese Patent No. 4098550 can be used.
As the polymerization initiator or polymerization initiation system, the polymerizable compounds described in [0031] to [0042] described in JP2011-95716A can be used.

Furthermore, an additive may be used for the photocurable resin layer. Examples of the additive include surfactants described in paragraph [0017] of Japanese Patent No. 4502784, paragraphs [0060] to [0071] of JP-A-2009-237362, and paragraph [ And the other additives described in paragraphs [0058] to [0071] of JP-A No. 2000-310706.
Moreover, as a solvent at the time of manufacturing the said photosensitive film by application | coating, the solvent as described in Paragraph [0043]-[0044] of Unexamined-Japanese-Patent No. 2011-95716 can be used.

(A) Mask layer (colorant)
In the method for manufacturing a capacitive input device of the present invention, when the photosensitive film is used as a mask layer, a colorant can be used for the photocurable resin layer. As the colorant used in the present invention, known colorants (organic pigments, inorganic pigments, dyes, etc.) can be suitably used. In the present invention, in addition to the black colorant, a mixture of pigments such as red, blue, and green can be used.

When using the said photocurable resin layer as a mask layer, it is preferable from a viewpoint of optical density that it is a black mask layer containing a black coloring agent. Examples of the black colorant include carbon black, titanium carbon, iron oxide, titanium oxide, and graphite. In the method for manufacturing a capacitive input device of the present invention, the black mask layer preferably contains carbon black or graphite, and carbon black is preferred.
When the photo-curable resin layer is used as a white mask layer, the white pigment described in paragraphs [0015] and [0114] of JP-A-2005-7765 can be used. For use as a mask layer of other colors, pigments or dyes described in paragraphs [0183] to [0185] of Japanese Patent No. 4546276 may be mixed and used. Specifically, the pigments and dyes described in paragraphs [0038] to [0054] of JP-A-2005-17716, and the pigments described in paragraphs [0068] to [0072] of JP-A-2004-361447. The coloring agents described in paragraph numbers [0080] to [0088] of JP-A-2005-17521 can be suitably used.

The colorant (preferably a pigment, more preferably carbon black) is desirably used as a dispersion. This dispersion can be prepared by adding and dispersing a composition obtained by previously mixing the colorant and the pigment dispersant in an organic solvent (or vehicle) described later. The vehicle is a portion of a medium in which a pigment is dispersed when the paint is in a liquid state, and is a liquid component that binds to the pigment to form a coating film (binder) and dissolves and dilutes it. Component (organic solvent).
The disperser used for dispersing the pigment is not particularly limited. For example, the kneader described in Kazuzo Asakura, “Encyclopedia of Pigments”, first edition, Asakura Shoten, 2000, 438, Known dispersing machines such as a roll mill, an atrider, a super mill, a dissolver, a homomixer, and a sand mill can be used. Further, fine grinding may be performed using frictional force by mechanical grinding described on page 310 of the document.

  From the viewpoint of dispersion stability, the colorant used in the present invention preferably has a number average particle diameter of 0.001 μm to 0.1 μm, and more preferably 0.01 μm to 0.08 μm. The “particle diameter” as used herein refers to the diameter when the electron micrograph image of the particle is a circle of the same area, and the “number average particle diameter” is the above-mentioned particle diameter for a large number of particles, This 100 average value is said.

The layer thickness of the photocurable resin layer containing the colorant is preferably 0.5 to 10 μm, more preferably 0.8 to 5 μm, and particularly preferably 1 to 3 μm from the viewpoint of a difference in thickness from the other layers. The content of the colorant in the solid content of the colored photosensitive resin composition is not particularly limited, but is preferably 15 to 70% by mass from the viewpoint of sufficiently shortening the development time. More preferably, it is mass%, and it is still more preferable that it is 25-50 mass%.
The total solid content as used in this specification means the total mass of the non-volatile component remove | excluding the solvent etc. from the coloring photosensitive resin composition.

(B) Conductive photocurable resin layer (conductive fiber)
In the method of manufacturing a capacitive input device of the present invention, when the photosensitive film on which the conductive photocurable resin layer is laminated is used for forming a transparent electrode pattern or another conductive element, Conductive fibers or the like can be used for the photocurable resin layer. In addition, as mentioned above, in the manufacturing method of the capacitance-type input device of the present invention, in addition to the transparent electrode pattern using the following conductive fiber, an ITO transparent electrode pattern having a known configuration may be provided by a known method. Good.

There is no restriction | limiting in particular as a structure of an electroconductive fiber, Although it can select suitably according to the objective, A solid structure or a hollow structure is preferable.
Here, the fiber having a solid structure may be referred to as “wire”, and the fiber having a hollow structure may be referred to as “tube”. In addition, a conductive fiber having an average minor axis length of 5 nm to 1,000 nm and an average major axis length of 1 μm to 100 μm may be referred to as “nanowire”.
In addition, conductive fibers having an average minor axis length of 1 nm to 1,000 nm, an average major axis length of 0.1 μm to 1,000 μm, and having a hollow structure may be referred to as “nanotubes”.
The material of the conductive fiber is not particularly limited as long as it has conductivity, and can be appropriately selected according to the purpose. However, at least one of metal and carbon is preferable, and among these, The conductive fiber is particularly preferably at least one of metal nanowires, metal nanotubes, and carbon nanotubes.

-Metal-
The material of the metal nanowire is not particularly limited. For example, at least one metal selected from the group consisting of the fourth period, the fifth period, and the sixth period of the long periodic table (IUPAC 1991) is preferable. More preferably, at least one metal selected from Group 2 to Group 14 is selected from Group 2, Group 8, Group 9, Group 10, Group 11, Group 12, Group 13, and Group 14. At least one metal selected from the group is more preferable, and it is particularly preferable to include it as a main component.

Examples of the metal include copper, silver, gold, platinum, palladium, nickel, tin, cobalt, rhodium, iridium, iron, ruthenium, osmium, manganese, molybdenum, tungsten, niobium, tantel, titanium, bismuth, antimony, and lead. And alloys thereof. Among these, in view of excellent conductivity, those mainly containing silver or those containing an alloy of silver and a metal other than silver are preferable.
The phrase “mainly containing silver” means that 50% by mass or more, preferably 90% by mass or more of silver is contained in the metal nanowire.
Examples of the metal used in the alloy with silver include platinum, osmium, palladium and iridium. These may be used alone or in combination of two or more.

-Shape-
The shape of the metal nanowire is not particularly limited and can be appropriately selected depending on the purpose. In applications where high transparency is required, a cylindrical shape and a cross-sectional shape with rounded polygonal corners are preferred.
The cross-sectional shape of the metal nanowire can be examined by applying a metal nanowire aqueous dispersion on a substrate and observing the cross-section with a transmission electron microscope (TEM).
The corner of the cross section of the metal nanowire means a peripheral portion of a point that extends each side of the cross section and intersects with a perpendicular drawn from an adjacent side. Further, “each side of the cross section” is a straight line connecting these adjacent corners. In this case, the ratio of the “outer peripheral length of the cross section” to the total length of the “each side of the cross section” was defined as the sharpness. For example, in the metal nanowire cross section as shown in FIG. 9, the sharpness can be represented by the ratio of the outer peripheral length of the cross section indicated by the solid line and the outer peripheral length of the pentagon indicated by the dotted line. A cross-sectional shape having a sharpness of 75% or less is defined as a cross-sectional shape having rounded corners. The sharpness is preferably 60% or less, and more preferably 50% or less. If the sharpness exceeds 75%, the electrons may be localized at the corners, and plasmon absorption may increase, or the transparency may deteriorate due to yellowing or the like. Moreover, the linearity of the edge part of a pattern may fall and a shakiness may arise. The lower limit of the sharpness is preferably 30%, more preferably 40%.

−Average minor axis length diameter and average major axis length−
The average minor axis length of the metal nanowire (sometimes referred to as “average minor axis diameter” or “average diameter”) is preferably 150 nm or less, more preferably 1 nm to 40 nm, still more preferably 10 nm to 40 nm, 15 nm to 35 nm is particularly preferable.
When the average minor axis length is less than 1 nm, the oxidation resistance may be deteriorated and the durability may be deteriorated. When the average minor axis length is more than 150 nm, scattering due to metal nanowires occurs and sufficient transparency is obtained. There are times when you can't.
The average minor axis length of the metal nanowires was observed from 300 metal nanowires using a transmission electron microscope (TEM; manufactured by JEOL Ltd., JEM-2000FX). The average minor axis length of was determined. In addition, the shortest axis length when the short axis of the metal nanowire is not circular is the shortest axis.

The average major axis length of the metal nanowire (sometimes referred to as “average length”) is preferably 1 μm to 40 μm, more preferably 3 μm to 35 μm, and even more preferably 5 μm to 30 μm.
If the average major axis length is less than 1 μm, it may be difficult to form a dense network and sufficient conductivity may not be obtained. If it exceeds 40 μm, the metal nanowires are too long and manufactured. Sometimes entangled and agglomerates may occur during the manufacturing process.
The average major axis length of the metal nanowire is, for example, observed with 300 metal nanowires using a transmission electron microscope (TEM; manufactured by JEOL Ltd., JEM-2000FX). The average major axis length of the wire was determined. In addition, when the said metal nanowire was bent, the circle | round | yen which makes it an arc was considered and the value calculated from the radius and curvature was made into the major axis length.

  The thickness of the conductive photocurable resin layer is preferably from 0.1 to 20 μm, and preferably from 0.5 to 18 μm, from the viewpoint of process suitability such as the stability of the coating liquid and drying during coating and development time during patterning. More preferably, 1-15 micrometers is especially preferable. The content of the conductive fiber relative to the total solid content of the conductive photocurable resin layer is preferably 0.01 to 50% by mass, and 0.05 to 30% by mass from the viewpoint of conductivity and stability of the coating liquid. % Is more preferable, and 0.1 to 20% by mass is particularly preferable.

(C) Insulating layer In addition, in the manufacturing method of the capacitance-type input device of the present invention, when the insulating layer is formed using the photosensitive film, the layer thickness of the photocurable resin layer is to maintain the insulating property. From the viewpoint, 0.1 to 5 μm is preferable, 0.3 to 3 μm is more preferable, and 0.5 to 2 μm is particularly preferable.

(D) Transparent Protective Layer In the method for manufacturing a capacitive input device of the present invention, when the transparent protective layer is formed using the photosensitive film, the layer thickness of the photocurable resin layer is sufficient to protect the surface. From the viewpoint of exhibiting the above, 0.5 to 10 μm is preferable, 0.8 to 5 μm is more preferable, and 1 to 3 μm is particularly preferable.

  Although the above description has focused on the case where the photosensitive film is a negative type material, the photosensitive film may be a positive type material. When the photosensitive film is a positive material, for example, a material described in JP-A-2005-221726 is used for the photocurable resin layer, but the material is not limited thereto.

The viscosity of the thermoplastic resin layer measured at 100 ° C. is in the region of 1000 to 10,000 Pa · sec, the viscosity of the photocurable resin layer measured at 100 ° C. is in the region of 2000 to 50000 Pa · sec, and the following formula ( It is preferable to satisfy A).
Formula (A): Viscosity of thermoplastic resin layer <viscosity of photocurable resin layer

  Here, the viscosity of each layer can be measured as follows. The solvent is removed from the coating solution for the thermoplastic resin layer or the photocurable resin layer by drying under atmospheric pressure and reduced pressure to obtain a measurement sample. For example, as a measuring instrument, Vibron (DD-III type: manufactured by Toyo Baldwin Co., Ltd.) Can be used under the conditions of a measurement start temperature of 50 ° C., a measurement end temperature of 150 ° C., a heating rate of 5 ° C./min, and a frequency of 1 Hz / deg, and a measurement value of 100 ° C. can be used.

(Other layers)
For the photosensitive film used in the present invention, an intermediate layer is provided between the photocurable resin layer and the thermoplastic resin layer, or a protective film is further provided on the surface of the photocurable resin layer. Can be configured.

  In the photosensitive film used in the present invention, it is preferable to provide an intermediate layer for the purpose of preventing mixing of components during the application of a plurality of layers and during storage after the application. As the intermediate layer, an oxygen barrier film having an oxygen barrier function, which is described as “separation layer” in JP-A-5-72724, is preferable, which increases the sensitivity during exposure and reduces the time load of the exposure machine. And productivity is improved.

  As the intermediate layer and the protective film, those described in paragraphs [0083] to [0087] and [0093] of JP-A-2006-259138 can be appropriately used.

<Method for producing photosensitive film>
The photosensitive film can be produced according to the method for producing a photosensitive transfer material described in paragraphs [0094] to [0098] of JP-A-2006-259138.
Specifically, when the photosensitive film having an intermediate layer is formed, a solution (addition liquid for thermoplastic resin layer) in which an additive is dissolved together with a thermoplastic organic polymer is applied on a temporary support. After drying and providing a thermoplastic resin layer, a preparation solution (intermediate layer coating solution) prepared by adding a resin or an additive to a solvent that does not dissolve the thermoplastic resin layer is applied onto the thermoplastic resin layer. Then, the intermediate layer is dried, and a colored photosensitive resin layer coating solution prepared by using a solvent that does not dissolve the intermediate layer is further applied on the intermediate layer, and dried to laminate the colored photosensitive resin layer. By doing so, it can be suitably manufactured.

<Manufacture of elements (1) to (5) using a photosensitive film>
In the manufacturing method of the capacitive input device of the present invention, the first transparent electrode pattern and the second transparent electrode when the mask layer, the insulating layer, the transparent protective layer, and the conductive photocurable resin layer are used. When a permanent material such as a pattern and a conductive element is formed using the photosensitive film, the photosensitive film is laminated on a base material and then exposed to a required pattern, and in the case of a negative type material, it is not exposed. In the case of a partial or positive type material, a pattern can be obtained by developing and removing the exposed portion. At this time, the development may be performed by removing the thermoplastic resin layer and the photocurable layer with separate liquids or with the same liquid. You may combine well-known image development facilities, such as a brush and a high pressure jet, as needed. After the development, post-exposure and post-bake may be performed as necessary.

  Moreover, in order to improve the adhesiveness of the photosensitive resin layer by lamination in a subsequent transfer step, a surface treatment can be performed on the non-contact surface of the base material (front plate) in advance. As the surface treatment, it is preferable to perform a surface treatment (silane coupling treatment) using a silane compound. As the silane coupling agent, those having a functional group that interacts with the photosensitive resin are preferable. For example, a silane coupling solution (N-β (aminoethyl) γ-aminopropyltrimethoxysilane 0.3 mass% aqueous solution, trade name: KBM603, manufactured by Shin-Etsu Chemical Co., Ltd.) is sprayed for 20 seconds by a shower, and pure water shower washing is performed. To do. Thereafter, the reaction is carried out by heating. A heating tank may be used, and the reaction can be promoted by preheating the substrate of the laminator.

  Moreover, a 1st transparent electrode layer, a 2nd transparent electrode layer, and another electroconductive member can also be formed using the said photosensitive film as a lift-off material. In this case, after patterning using the photosensitive film, a transparent conductive layer is formed on the entire surface of the base material, and then the desired transparent conductive layer is formed by dissolving and removing the photocurable resin layer together with the deposited transparent conductive layer. A pattern can be obtained (lift-off method).

(When forming a permanent material using a photosensitive film)
In the case of forming a permanent material using the photosensitive film, a patterning method using the photosensitive film will be described by taking as an example a method of forming a black mask layer.

  The method of forming the mask layer includes a cover film removing step of removing the cover film from the photosensitive film, and transferring the photosensitive resin layer of the photosensitive transfer material from which the cover film has been removed onto a substrate. And a developing step of developing the exposed photosensitive resin layer to obtain a pattern image, and a developing step of exposing the photosensitive resin layer transferred onto the substrate.

-Transcription process-
The transfer step is a step of transferring the photocurable resin layer of the photosensitive film from which the cover film has been removed onto a substrate.
At this time, a method of removing the temporary support after laminating the photocurable resin layer of the photosensitive film on the substrate is preferable.
Transfer (bonding) of the photocurable resin layer to the surface of the substrate is performed by stacking the photocurable resin layer on the surface of the substrate, pressurizing and heating. For laminating, known laminators such as a laminator, a vacuum laminator, and an auto-cut laminator that can further increase productivity can be used.

-Exposure process, development process, and other processes-
As examples of the exposure step, the development step, and other steps, the method described in paragraphs [0035] to [0051] of JP-A-2006-23696 can be suitably used in the present invention.

The exposure step is a step of exposing the photocurable resin layer transferred onto the substrate.
Specifically, a method of disposing a predetermined mask above the photocurable resin layer formed on the substrate and then exposing from above the mask through the mask layer, the thermoplastic resin layer, and the intermediate layer Is mentioned.
Here, the light source for the exposure can be appropriately selected and used as long as it can irradiate light in a wavelength region capable of curing the photocurable resin layer (for example, 365 nm, 405 nm, etc.). Specifically, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a metal halide lamp, etc. are mentioned. As an exposure amount, it is about 5-200 mJ / cm < ² > normally, Preferably it is about 10-100 mJ / cm < ² >.

The developing step is a step of developing the exposed photocurable resin layer.
The development can be performed using a developer. The developer is not particularly limited, and known developers such as those described in JP-A-5-72724 can be used. In addition, the developer preferably has a photo-curing resin layer having a dissolution type development behavior. For example, a developer containing a compound of pKa = 7 to 13 at a concentration of 0.05 to 5 mol / L is preferable. A small amount of an organic solvent that is miscible with may be added. Examples of organic solvents miscible with water include methanol, ethanol, 2-propanol, 1-propanol, butanol, diacetone alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-butyl ether, and benzyl alcohol. , Acetone, methyl ethyl ketone, cyclohexanone, ε-caprolactone, γ-butyrolactone, dimethylformamide, dimethylacetamide, hexamethylphosphoramide, ethyl lactate, methyl lactate, ε-caprolactam, N-methylpyrrolidone and the like. The concentration of the organic solvent is preferably 0.1% by mass to 30% by mass. Further, a known surfactant can be added to the developer. The concentration of the surfactant is preferably 0.01% by mass to 10% by mass.

  The development method may be any of paddle development, shower development, shower & spin development, dip development, and the like. Here, the shower development will be described. The uncured portion can be removed by spraying a developer onto the photocurable resin layer after exposure. When a thermoplastic resin layer or an intermediate layer is provided, an alkaline solution having a low solubility of the photocurable resin layer is sprayed by a shower or the like before development to remove the thermoplastic resin layer or the intermediate layer. It is preferable to keep it. Further, after the development, it is preferable to remove the development residue while spraying a cleaning agent or the like with a shower and rubbing with a brush or the like. The liquid temperature of the developer is preferably 20 ° C. to 40 ° C., and the pH of the developer is preferably 8 to 13.

  The manufacturing method of the capacitance-type input device of the present invention may have other processes such as a post-exposure process and a post-bake process.

  The patterning exposure may be performed after the temporary support is peeled off, or may be exposed before the temporary support is peeled off, and then the temporary support may be peeled off. Exposure through a mask or digital exposure using a laser or the like may be used.

(When a photosensitive film is used as an etching resist)
Also when using the said photosensitive film as an etching resist (etching pattern), a resist pattern can be obtained like the said method. For the etching, etching and resist stripping can be applied by a known method described in paragraphs [0048] to [0054] of JP 2010-152155 A.

  For example, as an etching method, a commonly performed wet etching method in which the substrate is immersed in an etching solution can be used. As an etching solution used for wet etching, an acid type or an alkaline type may be appropriately selected according to an object to be etched. Examples of acidic etching solutions include aqueous solutions of acidic components such as hydrochloric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid, and mixed aqueous solutions of acidic components and salts of ferric chloride, ammonium fluoride, potassium permanganate, and the like. Is done. As the acidic component, a combination of a plurality of acidic components may be used. In addition, alkaline type etching solutions include sodium hydroxide, potassium hydroxide, ammonia, organic amines, aqueous solutions of alkali components such as organic amine salts such as tetramethylammonium hydroxide, alkaline components and potassium permanganate. A mixed aqueous solution of a salt such as A combination of a plurality of alkali components may be used as the alkali component.

The temperature of the etching solution is not particularly limited, but is preferably 45 ° C. or lower. The resin pattern used as an etching mask (etching pattern) in the present invention is formed by using the above-described photocurable resin layer, so that it is particularly suitable for acidic and alkaline etching solutions in such a temperature range. Excellent resistance. Therefore, the resin pattern is prevented from peeling off during the etching process, and the portion where the resin pattern does not exist is selectively etched.
After the etching, a cleaning process and a drying process may be performed as necessary to prevent line contamination. For the cleaning process, the substrate is cleaned with pure water for 10 to 300 seconds at room temperature, for example, and for the drying process, air blow pressure (about 0.1 to 5 kg / cm ² ) is appropriately adjusted using air blow. Just do it.

  Next, the peeling method of the resin pattern is not particularly limited, and examples thereof include a method of immersing the substrate in a peeling solution being stirred at 30 to 80 ° C., preferably 50 to 80 ° C. for 5 to 30 minutes. The resin pattern used as an etching mask in the present invention exhibits excellent chemical resistance at 45 ° C. or lower as described above, but exhibits a property of swelling by an alkaline stripping solution when the chemical temperature is 50 ° C. or higher. . Due to such properties, when the peeling step is performed using a peeling solution of 50 to 80 ° C., there is an advantage that the process time is shortened and the peeling residue of the resin pattern is reduced. That is, by providing a difference in chemical temperature between the etching process and the peeling process, the resin pattern used as an etching mask in the present invention exhibits good chemical resistance in the etching process, while in the peeling process. Good peelability will be exhibited, and both conflicting properties of chemical resistance and peelability can be satisfied.

  Examples of the stripping solution include inorganic alkali components such as sodium hydroxide and potassium hydroxide, organic alkali components such as tertiary amine and quaternary ammonium salt, water, dimethyl sulfoxide, N-methylpyrrolidone, or these. What was melt | dissolved in this mixed solution is mentioned. You may peel by the spray method, the shower method, the paddle method etc. using the said peeling liquid.

[Capacitive Input Device and Image Display Device Comprising Capacitive Input Device as Components]
An electrostatic capacitance type input device obtained by the manufacturing method of the present invention and an image display device including the electrostatic capacitance type input device as a constituent element are “latest touch panel technology” (issued July 6, 2009, Inc.) Techno Times), supervised by Yuji Mitani, "Touch Panel Technology and Development", CMC Publishing (2004, 12), FPD International 2009 Forum T-11 Lecture Textbook, Cypress Semiconductor Corporation Application Note AN2292, etc. Can be applied.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples unless it exceeds the gist thereof. Unless otherwise specified, “%” and “parts” are based on mass.

[Example 1]
<Formation of mask layer>
<Preparation of photosensitive film K1 for forming mask layer>
On a 75 μm thick polyethylene terephthalate film temporary support, a coating solution for a thermoplastic resin layer having the following formulation H1 was applied and dried using a slit nozzle. Next, an intermediate layer coating solution having the following formulation P1 was applied and dried. Furthermore, the coating liquid for black photocurable resin layers which consists of the following prescription K1 was apply | coated and dried. In this way, the thermoplastic film layer having a dry film thickness of 15.1 μm, the intermediate layer having a dry film thickness of 1.6 μm, and the dry film thickness so that the optical density is 4.0 are formed on the temporary support. A 2.2 μm black photocurable resin layer was provided, and finally a protective film (12 μm thick polypropylene film) was pressure-bonded. In this way, a transfer material in which the temporary support, the thermoplastic resin layer, the intermediate layer (oxygen barrier film), and the black photocurable resin layer were integrated was prepared, and the sample name was designated as a mask layer forming photosensitive film K1.

(Coating solution for thermoplastic resin layer: Formulation H1)
Methanol: 11.1 parts by mass Propylene glycol monomethyl ether acetate: 6.36 parts by mass Methyl ethyl ketone: 52.4 parts by mass Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymerization composition ratio) (Molar ratio) =
55 / 11.7 / 4.5 / 28.8, molecular weight = 100,000, Tg≈70 ° C.)
: 5.83 parts by mass-Styrene / acrylic acid copolymer (copolymerization composition ratio (molar ratio) = 63/37,
Weight average molecular weight = 10,000, Tg≈100 ° C.): 13.6 parts by mass / monomer 1 (trade name: BPE-500, manufactured by Shin-Nakamura Chemical Co., Ltd.)
: 9.1 parts by mass Fluorine-based polymer: 0.54 parts by mass The above fluorine-containing _{polymer, C 6 F 13 CH 2 CH} 2 OCOCH = CH 2 40 parts of _{H (OCH (CH 3) CH} 2) 7 OCOCH = a copolymer of CH ₂ 55 parts of _{H (OCHCH 2) 7 OCOCH =} CH 2 5 parts, weight average molecular weight 30,000, methyl ethyl ketone 30 wt% solution (trade name: Megafac F780F, Dainippon ink and chemicals (Manufactured by Kogyo Co., Ltd.)
The viscosity at 120 ° C. after removing the solvent from the coating liquid H1 for the thermoplastic resin layer was 1500 Pa · sec.

(Coating liquid for intermediate layer: prescription P1)
Polyvinyl alcohol: 32.2 parts by mass (trade name: PVA205, manufactured by Kuraray Co., Ltd., saponification degree = 88%, polymerization degree 550)
・ Polyvinylpyrrolidone: 14.9 parts by mass (trade name: K-30, manufactured by ISP Japan Co., Ltd.)
-Distilled water: 524 parts by mass-Methanol: 429 parts by mass

(Coating liquid for black light curable resin layer: Formula K1)
-K pigment dispersion 1: 31.2 parts by mass-R pigment dispersion 1 (the following composition): 3.3 parts by mass-MMPGAc (manufactured by Daicel Chemical Industries): 6.2 parts by mass-Methyl ethyl ketone (Tonen Chemical) (Manufactured by Co., Ltd.): 34.0 parts by mass / cyclohexanone (manufactured by Kanto Denka Kogyo Co., Ltd.): 8.5 parts by mass / binder 2 (benzyl methacrylate / methacrylic acid = 78/22 molar ratio)
Random copolymer, weight average molecular weight 38,000): 10.8 parts by mass Phenothiazine (manufactured by Tokyo Chemical Industry Co., Ltd.): 0.01 parts by mass DPHA (dipentaerythritol hexaacrylate, Nippon Kayaku Co., Ltd.) Made)
Propylene glycol monomethyl ether acetate solution (76% by mass)
: 5.5 parts by mass · 2,4-bis (trichloromethyl) -6- [4 ′-(N, N-bis (ethoxycarbonylmethyl) amino-3′-bromophenyl] -s-triazine
: 0.4 parts by mass / surfactant (trade name: MegaFuck F-780F, manufactured by Dainippon Ink, Inc.)
: 0.1 mass part In addition, the viscosity of 100 degreeC after the solvent removal of the coating liquid K1 for black photocurable resin layers was 10000 Pa.sec.

(Composition of K pigment dispersion 1)
Carbon black (trade name: Nipex 35, manufactured by Degussa): 13.1% by mass
・ The following dispersant 1: 0.65 mass%
Binder 1 (benzyl methacrylate / methacrylic acid = 72/28 molar ratio random copolymer, weight average molecular weight 37,000): 6.72% by mass
Propylene glycol monomethyl ether acetate: 79.53% by mass

-Composition of R pigment dispersion 1-
Pigment (CI Pigment Red 177): 18% by mass
Binder 1 (benzyl methacrylate / methacrylic acid = 72/28 molar ratio random copolymer, weight average molecular weight 37,000): 12% by mass
Propylene glycol monomethyl ether acetate: 70% by mass

<Formation of mask layer>
Next, the glass cleaner liquid adjusted to 25 ° C. was sprayed on a tempered glass (300 mm × 400 mm × 0.7 mm) in which an opening (15 mmΦ) was formed, and was washed with a rotating brush having nylon hair while spraying it for 20 seconds with a shower. After washing with pure water, a silane coupling solution (N-β (aminoethyl) γ-aminopropyltrimethoxysilane 0.3% by mass aqueous solution, trade name: KBM603, manufactured by Shin-Etsu Chemical Co., Ltd.) was showered 20 Sprayed for 2 seconds and washed with pure water shower. This substrate was heated at 140 ° C. for 2 minutes with a substrate preheating device. The surface of the black photocurable resin layer exposed after removing the cover film from the photosensitive film K1 for mask layer formation obtained from the above to the obtained silane coupling treated glass substrate and the silane coupling treatment Laminator (manufactured by Hitachi Industries, Ltd. (Lamic II type)) using a laminator (Lamic II type), the substrate heated at 140 ° C., rubber roller temperature 130 ° C., linear pressure Lamination was performed at 100 N / cm and a conveyance speed of 2.2 m / min. Subsequently, the polyethylene terephthalate temporary support was peeled off at the interface with the thermoplastic resin layer to remove the temporary support. After peeling off the temporary support, the substrate and the exposure mask (quartz exposure mask with a frame pattern) were set up vertically with a proximity type exposure machine (manufactured by Hitachi High-Tech Electronics Engineering Co., Ltd.) having an ultra-high pressure mercury lamp. In this state, the distance between the exposure mask surface and the black light curable resin layer was set to 200 μm, and pattern exposure was performed at an exposure amount of 70 mJ / cm ² (i-line).

  Next, a triethanolamine developer (containing 30% by mass of triethanolamine, trade name: T-PD2 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water) at 33 ° C. for 60 seconds, Shower development was performed at a flat nozzle pressure of 0.1 MPa to remove the thermoplastic resin layer and the intermediate layer. Subsequently, air was blown onto the upper surface of the glass base material to drain the liquid, and then pure water was sprayed for 10 seconds by a shower, pure water shower washing was performed, and air was blown to reduce the liquid pool on the base material.

  Thereafter, the shower pressure was reduced to 0.1 MPa at 32 ° C. using a sodium carbonate / sodium hydrogen carbonate developer (trade name: T-CD1 (manufactured by Fuji Film Co., Ltd.) diluted 5 times with pure water). It was set, developed for 45 seconds, and washed with pure water.

  Subsequently, using a surfactant-containing cleaning solution (trade name: T-SD3 (manufactured by Fuji Film Co., Ltd.) diluted 10-fold with pure water) at 33 ° C. for 20 seconds, cone-type nozzle pressure of 0.1 MPa The residue was removed by rubbing the formed pattern image with a rotating brush having soft nylon hairs. Furthermore, ultrapure water is sprayed at a pressure of 9.8 MPa with an ultrahigh pressure washing nozzle to remove residues,

Next, post-exposure is performed in the atmosphere at an exposure amount of 1300 mJ / cm ² , and further post-baking treatment is performed at 240 ° C. for 80 minutes to form a mask layer having an optical density of 4.0 and a film thickness of 2.0 μm. A face plate was obtained.

<Formation of inorganic insulating film>
The front plate on which the mask layer was formed was introduced into a vacuum chamber, and a SiO ₂ thin film having a film thickness shown in Table 1 below was formed by direct current magnetron sputtering using silicon as a target. (Conditions: degree of vacuum 0.27 Pa, gas flow rate Ar gas 500 sccm, O ₂ gas 80 sccm)
Thus, to prepare a substrate formed with the SiO ₂ thin film on the mask layer, and measure the surface resistivity on the mask layer. The results are shown in Table 1 below. The surface resistance was increased by forming the SiO ₂ thin film.

<Formation of first transparent electrode pattern>
<Formation of transparent electrode layer>
A substrate having a SiO ₂ thin film formed on a mask layer was introduced into a vacuum chamber, and a direct current magnetron was used using an ITO target (indium: tin = 95: 5 (molar ratio)) with a SnO ₂ content of 10% by mass. A 40 nm thick ITO thin film was formed by sputtering (conditions: substrate temperature 300 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa) to obtain a front plate on which the first transparent electrode layer was formed. The surface resistance of the portion of the ITO thin film where the mask layer was not formed (ITO film of the portion in which the glass, SiO ₂ thin film, and ITO film were laminated in this order) was 80Ω / □.

[Preparation of Photosensitive Film E1 for Etching]
In the preparation of the mask layer forming photosensitive film K1, the photosensitivity for forming the mask layer was changed except that the coating solution for the black photocurable resin layer was replaced with the coating solution for the photocurable resin layer for etching having the following formulation E1. In the same manner as the preparation of the film K1, a photosensitive film E1 for etching was obtained (the film thickness of the photocurable resin layer for etching was 2.0 μm).

(Coating liquid for photocurable resin layer for etching: prescription E1)
Methyl methacrylate / styrene / methacrylic acid copolymer (copolymer composition (mass%): 31/40/29, mass average molecular weight 60000,
Acid value 163 mg KOH / g): 16 parts by mass Monomer 1 (Brand name: BPE-500, manufactured by Shin-Nakamura Chemical Co., Ltd.)
: 5.6 parts by mass-tetramethylene oxide monomethacrylate 0.5 mol adduct of hexamethylene diisocyanate: 7 parts by mass-cyclohexane dimethanol monoacrylate as a compound having one polymerizable group in the molecule: 2.8 parts by mass 2-chloro-N-butylacridone: 0.42 parts by mass 2,2-bis (o-chlorophenyl) -4,4 ′, 5,5′-tetraphenylbiimidazole: 2.17 parts by mass Malachite Green oxalate: 0.02 parts by mass, leuco crystal violet: 0.26 parts by mass, phenothiazine: 0.013 parts by mass, surfactant (trade name: Megafac F-780F, manufactured by Dainippon Ink Co., Ltd.)
: 0.03 parts by mass · Methyl ethyl ketone: 40 parts by mass · 1-methoxy-2-propanol: 20 parts by mass The viscosity at 100 ° C after removing the solvent of the coating liquid E1 for photocurable resin layer for etching is 2500 Pa · sec. Met.

<Formation of first transparent electrode pattern>
Similar to the formation of the mask layer, the front plate on which the transparent electrode layer was formed was washed and the photosensitive film E1 for etching from which the cover film was removed was laminated (base material temperature: 130 ° C., rubber roller temperature 120 ° C., wire Pressure 100 N / cm, conveyance speed 2.2 m / min). After peeling off the temporary support, the distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the photocurable resin layer for etching is set to 200 μm, and the exposure amount is 50 mJ / cm ² (i-line). ) For pattern exposure.
Next, a triethanolamine developer (containing 30% by mass of triethanolamine, a trade name: T-PD2 (manufactured by FUJIFILM Corporation) diluted 10 times with pure water) at 25 ° C. for 100 seconds, A surfactant-containing cleaning solution (trade name: T-SD3 (manufactured by FUJIFILM Corporation) diluted 10-fold with pure water) was treated at 33 ° C. for 20 seconds, using a rotating brush and an ultra-high pressure cleaning nozzle. Residue removal was performed, and a post-bake treatment at 130 ° C. for 30 minutes was further performed to obtain a front plate on which a transparent electrode layer and a photocurable resin layer pattern for etching were formed.

  The front plate on which the transparent electrode layer and the photocurable resin layer pattern for etching are formed is immersed in an etching bath containing ITO etchant (hydrochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.), treated for 100 seconds, and used for etching. The exposed transparent electrode layer not covered with the photocurable resin layer was dissolved and removed to obtain a front plate with a transparent electrode layer pattern having a photocurable resin layer pattern for etching.

  Next, a front plate with a transparent electrode layer pattern with a photocurable resin layer pattern for etching was applied to a resist stripping solution (N-methyl-2-pyrrolidone, monoethanolamine, surfactant (trade name: Surfynol 465). Before being formed in a resist stripping tank containing a liquid temperature of 45 ° C.), treated for 200 seconds, removing the photocurable resin layer for etching, and forming the mask layer and the first transparent electrode pattern. A face plate was obtained.

<Formation of insulating layer>
<Preparation of photosensitive film W1 for insulating layer formation>
Photosensitive film for mask layer formation except that the coating liquid for black photocurable resin layer was changed to the coating liquid for photocurable resin layer for insulating layer having the following formulation W1 in the preparation of photosensitive film K1 for mask layer formation. In the same manner as the preparation of the film K1, an insulating layer forming photosensitive film W1 was obtained (the film thickness of the insulating layer photocurable resin layer was 1.4 μm).

(Insulating layer forming coating solution: Formula W1)
Binder 3 (cyclohexyl methacrylate (a) / methyl methacrylate (b) / methacrylic acid copolymer (c) glycidyl methacrylate adduct (d) (composition (% by mass): a / b / c / d = 46/1) / 10/43, mass average molecular weight: 36000, acid value 66 mgKOH / g) 1-methoxy-2-propanol, methyl ethyl ketone solution (solid content: 45%))
: 12.5 parts by mass · DPHA (dipentaerythritol hexaacrylate, manufactured by Nippon Kayaku Co., Ltd.)
Propylene glycol monomethyl ether acetate solution (76% by mass)
: 1.4 parts by mass / urethane monomer (trade name: NK Oligo UA-32P, manufactured by Shin-Nakamura Chemical Co., Ltd .: non-volatile content 75%, propylene glycol monomethyl ether acetate:
25%): 0.68 parts by mass. Tripentaerythritol octaacrylate (trade name: V # 802,
Osaka Organic Chemical Industry Co., Ltd.): 1.8 parts by mass. Diethylthioxanthone: 0.17 parts by mass. 2- (dimethylamino) -2-[(4-methylphenyl) methyl] -1-
[4- (4-morpholinyl) phenyl] -1-butanone (Brand name: Irgacure 379, manufactured by BASF): 0.17 parts by mass Dispersant (Brand name: Solsperse 20000, manufactured by Avicia): 0.19 parts by mass, interface Activator (Brand name: Megafuck F-780F, manufactured by Dainippon Ink)
: 0.05 parts by mass-Methyl ethyl ketone: 23.3 parts by mass-MMPGAc (manufactured by Daicel Chemical Co., Ltd.): 59.8 parts by mass The viscosity at 100 ° C. after removing the solvent of the coating liquid W1 for forming the insulating layer is 4000 Pa.・ It was sec.

In the same manner as the formation of the mask layer, the front plate with the first transparent electrode pattern was washed, subjected to silane coupling treatment, and laminated with the insulating film forming photosensitive film W1 from which the cover film was removed (base material temperature: 100 ° C., rubber roller temperature 120 ° C., linear pressure 100 N / cm, conveyance speed 2.3 m / min). After peeling off the temporary support, the distance between the exposure mask (quartz exposure mask having the insulating layer pattern) surface and the photocurable resin layer for etching is set to 100 μm, and the exposure dose is 30 mJ / cm ² (i Line).

  Next, a triethanolamine developer (containing 30% by mass of triethanolamine, trade name: T-PD2 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water) at 33 ° C. for 60 seconds, Sodium carbonate / sodium bicarbonate developer (trade name: T-CD1 (manufactured by FUJIFILM Corporation) diluted 5 times with pure water) at 25 ° C. for 50 seconds, surfactant-containing cleaning solution (trade name) : T-SD3 (manufactured by Fuji Film Co., Ltd.) diluted 10 times with pure water) was treated at 33 ° C. for 20 seconds, and the residue was removed with a rotating brush and an ultra-high pressure washing nozzle. A front baking process was performed for 60 minutes to obtain a front plate on which a mask layer, a first transparent electrode pattern, and an insulating layer pattern were formed.

<< Formation of second transparent electrode pattern >>
<Formation of transparent electrode layer>
In the same manner as the formation of the first transparent electrode pattern, the front plate on which the first transparent electrode pattern and the insulating layer pattern were formed was subjected to DC magnetron sputtering treatment (conditions: substrate temperature 50 ° C., argon pressure 0.13 Pa). An oxygen thin film having an oxygen pressure of 0.01 Pa and a thickness of 80 nm was formed to obtain a front plate on which a transparent electrode layer was formed.

In the same manner as the formation of the first transparent electrode pattern, the first transparent electrode pattern, the insulating layer pattern, the transparent electrode layer, and the photocurable resin layer pattern for etching are formed using the etching photosensitive film E1. The obtained front plate was obtained (post-baking treatment; 130 ° C. for 30 minutes).
Further, in the same manner as in the formation of the first transparent electrode pattern, the mask layer is formed by etching (30 ° C. for 50 seconds) and removing the photocurable resin layer for etching (45 ° C. for 200 seconds). A front plate on which a transparent electrode pattern, an insulating layer pattern, and a second transparent electrode pattern were formed was obtained.
The obtained front plate was heated at 240 ° C. for 60 minutes, thereby annealing patterned ITO (second transparent electrode pattern). The surface resistance of the portion of the ITO film where the mask layer was not formed (the portion of the ITO film laminated in the order of glass, SiO ₂ thin film, and ITO film) was 110Ω / □. The surface resistance value of the ITO film on the mask layer (the ITO film in the portion in which the glass, the mask layer, the SiO ₂ thin film, and the ITO film were laminated in this order) was 202Ω / □.

<< Formation of Conductive Element Separate from First and Second Transparent Electrode Pattern >>
Similar to the formation of the first and second transparent electrode patterns, the front plate on which the first transparent electrode pattern, the insulating layer pattern, and the second transparent electrode pattern were formed was subjected to DC magnetron sputtering treatment to a thickness of 200 nm. A front plate on which an aluminum (Al) thin film was formed was obtained.

Similar to the formation of the first and second transparent electrode patterns, the first transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the photocuring for etching are performed using the etching photosensitive film E1. A front plate on which a conductive resin layer pattern was formed was obtained. (Post-bake treatment; 130 ° C. for 30 minutes).
Further, in the same manner as in the formation of the first transparent electrode pattern, the mask layer is formed by etching (30 ° C. for 50 seconds) and removing the photocurable resin layer for etching (45 ° C. for 200 seconds). A front plate on which conductive elements different from the transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns were formed was obtained.

<Formation of transparent protective layer>
In the same manner as the formation of the insulating layer, the insulating film forming photosensitive film W1 from which the cover film has been removed is laminated on the front plate formed up to the conductive element different from the first and second transparent electrode patterns, After peeling off the temporary support, front exposure is performed with an exposure amount of 50 mJ / cm ² (i-line) without going through an exposure mask, development, post-exposure (1000 mJ / cm ² ), and post-baking treatment are performed, Before laminating the insulating layer (transparent protective layer) so as to cover all the conductive elements different from the one transparent electrode pattern, the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns A face plate 1 was obtained.

<< Production of image display device (touch panel) >>
An image display according to the first embodiment in which a liquid crystal display element manufactured by the method described in Japanese Patent Application Laid-Open No. 2009-47936 is bonded to the previously manufactured front plate and a capacitance type input device is provided as a constituent element by a known method. A device was made.

[Examples 2 to 6 and Comparative Example 1]
In the production of the image display device of Example 1, images of Examples 2 to 6 were obtained in the same manner as Example 1 except that the thickness of the SiO ₂ film was changed as shown in Table 1 below when the inorganic insulating film was formed. A display device was produced.
Further, in the production of the image display device of Example 1, the image display device of Comparative Example 1 was produced in the same manner as in Example 1 except that the inorganic insulating film was not formed.

<Evaluation of image display device>
<Surface resistance of transparent electrode pattern>
Table 1 below shows the results of measuring the surface resistance of the second transparent electrode pattern and the surface resistance of the mask layer during the manufacture of the image display devices of the examples and the comparative examples.

上記表１中、Ｅ８は、×１０⁸を示す。Ｅ１１は、×１０¹¹を示す。

In Table 1 above, E8 represents × 10 ⁸ . E11 indicates x10 ¹¹ .

From Table 1, it can be seen that by forming the SiO ₂ film, the surface resistance of the mask layer can be increased and the insulation can be improved, and the surface resistance of the second transparent electrode pattern on the mask layer can be decreased. It was. That is, it was found that the resistance of the transparent electrode pattern provided on the black mask layer can be suppressed, the insulation between the transparent electrode patterns is good, and the manufacturing method of an inexpensive capacitive input device.

  In the produced image display devices of the respective examples, the touch panel operated normally and the display characteristics were satisfactory. In the display device of Comparative Example 1, since the insulation failure between the ITO patterns (second transparent electrode patterns) formed on the mask layer and the resistance of the ITO (second transparent electrode patterns) itself are high, the touch panel is normal. It did not work and the contact position could not be recognized.

  As described above, it can be seen that the capacitance-type input device manufactured by the manufacturing method of the present invention and the image display device using the same are of high quality.

DESCRIPTION OF SYMBOLS 1 Front plate 2 Mask layer 3 1st transparent electrode pattern 3a Pad part 3b Connection part 4 2nd transparent electrode pattern 5 Insulating layer 6 Conductive element 7 Transparent protective layer 8 Opening part 10 Capacitive type input device 11 Strengthening process Glass 13 Inorganic insulating film

Claims (9)

A method for manufacturing a capacitive input device having a front plate and at least the following elements (1) to (5) on a non-contact side of the front plate:
Forming the following mask layer;
And below the mask layer, between the transparent electrode pattern of a portion that is disposed on a surface of at least the mask layer of the first and second transparent electrode patterns following the steps of providing an inorganic insulating layer directly on the mask layer ,
The following first transparent electrode pattern is formed by directly providing at least a portion of the transparent electrode pattern on the surface of the mask layer of the first transparent electrode pattern on the inorganic insulating layer; and
The following second transparent electrode pattern includes a step of directly forming a transparent electrode pattern of a portion of the second transparent electrode pattern on the surface of the mask layer in the inorganic insulating layer,
A method for manufacturing a capacitance-type input device, wherein the inorganic insulating layer has a thickness of 5 to 100 nm.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern Conductive element separate from the second transparent electrode pattern _{2. The} method of manufacturing a capacitive input device according to claim 1, wherein the inorganic insulating layer is a SiO2 film.   The static electricity according to claim 1 or 2, wherein at least one of the elements (1) to (5) is formed using a photosensitive film having a temporary support and a photocurable resin layer. A method for manufacturing a capacitive input device.   The said photosensitive film has the said temporary support body, a thermoplastic resin layer, and the said photocurable resin layer in this order, The manufacturing method of the electrostatic capacitance type input device of Claim 3 characterized by the above-mentioned.   5. The method of manufacturing a capacitive input device according to claim 1, further comprising a step of performing a heat treatment at 150 to 350 ° C. after forming the first transparent electrode pattern.   The said mask layer is a black mask layer, The manufacturing method of the electrostatic capacitance type input device as described in any one of Claims 1-5 characterized by the above-mentioned.   The method of manufacturing a capacitive input device according to claim 6, wherein the black mask layer contains carbon black or graphite. A capacitive input device having at least the following elements (1) to (5) on a non-contact side of the front plate and the front plate:
An inorganic insulating layer is in direct contact with the mask layer between the following mask layer and the transparent electrode pattern of at least a portion of the following first and second transparent electrode patterns disposed on the surface of the mask layer. And
The following first transparent electrode pattern , in direct contact with the transparent electrode pattern of the portion of the first transparent electrode pattern placed on the surface of at least the mask layer in the inorganic insulating layer,
The following second transparent electrode pattern has the inorganic insulating layer in direct contact with the transparent electrode pattern of at least a portion of the second transparent electrode pattern placed on the surface of the mask layer,
The capacitance type input device, wherein the inorganic insulating layer has a thickness of 5 to 100 nm.
(1) Mask layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) The first transparent electrode pattern and the electric A plurality of second transparent electrode patterns comprising a plurality of pad portions that are electrically insulated and extend in a direction intersecting the first direction (4) The first transparent electrode pattern and the second An insulating layer that electrically insulates the transparent electrode pattern (5) electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern, and the first transparent electrode pattern and the second transparent electrode pattern Conductive element separate from the second transparent electrode pattern   An image display device comprising the capacitive input device according to claim 8 as a constituent element.

Images