JP5999938B2 - Photosensitive resin composition and method for producing cured relief pattern - Google Patents

Description

  The present invention relates to a photosensitive resin composition, and a semiconductor device and a display device having a cured relief pattern obtained by curing the photosensitive resin composition.

  Conventionally, polyimide resins or polybenzoxazole resins having excellent heat resistance, electrical properties, and mechanical properties have been widely used for permanent films used in semiconductor devices, such as surface protective films and interlayer insulating films. Since these resins have a cyclic structure and have low solubility in various solvents as they are, they are generally used as compositions in which a precursor having a ring structure opened is dissolved in a solvent. Therefore, in order to manufacture a semiconductor device, a step of ring-closing the precursor is required after the step of applying the composition on the semiconductor element. This ring closing step is usually performed by thermosetting which is heated to 300 ° C. or higher.

  However, in recent years, since semiconductor devices having inferior heat resistance compared to conventional products have been developed, a material for forming a surface protective film or an interlayer insulating film is required to have a lower thermosetting temperature, particularly 250 ° C. or less. In many cases, thermosetting properties are required.

  In response to this requirement, Patent Document 1 discloses a composition using a phenol resin obtained by condensing phenols and aldehydes, and crosslinkable fine particles for improving the thermal shock resistance of the phenol resin. Has been proposed. Phenol resin is a resin that is widely used as a base resin for resists that are temporarily used as a mask in etching or film formation processes when manufacturing semiconductor devices, and does not require the above-described ring closure process, so it is cured at low temperatures. In addition, it is excellent in cost and photosensitive performance.

  Further, in Patent Document 2, in order to improve the thermal shock resistance of a phenol resin, when synthesizing a phenol resin, an α, α′-dihaloxylene compound and an α, α′-dihydroxyxylene compound are used instead of aldehydes. And a composition obtained by condensing at least one substituted xylene compound selected from the group consisting of an α, α′-dialkoxyxylene compound and a phenol compound.

  Furthermore, Patent Document 3 describes a photosensitive resin composition comprising an alkali-soluble phenol resin, polyhydroxystyrene or a polyhydroxystyrene derivative, and various photosensitive diazonaphthoquinone compounds.

  In addition, the following patent documents 4-9 are quoted in the description location of the photosensitive diazonaphthoquinone compound in [Mode for carrying out the invention] described later. In more detail, [Chemical Formula 17] to [Chemical Formula 22] of Patent Document 4; [Chemical Formula 18] to [Chemical Formula 22] of Patent Document 5; [Chemical Formula 15] and [Chemical Formula 16] of Patent Document 6; [Chemical Formula 23] to [Chemical Formula 28], Patent Document 8 [Chemical Formula 24] and [Chemical Formula 25], and Patent Document 9 [Chemical Formula 18] to [Chemical Formula 32].

JP 2003-215789 A JP 2007-057595 A JP 2008-129178 A JP 2004-109849 A JP 2001-356475 A JP 2005-8626 A JP 2001-92138 A JP 2004-347902 A JP 2001-109149 A

  When the resin film is applied to a semiconductor device as a permanent film, it is necessary to maintain a good shape so that the cured relief pattern does not collapse and the pattern is not buried. However, the above Patent Documents 1 to 3 do not describe a relief pattern formation in a thick film (5 to 10 μm after curing) necessary as a protective film or an insulating film used in a semiconductor device, and further, about the shape of the cured pattern. There is no description. When the present inventors examined, compared with the cured relief pattern which consists of the polyimide resin or polybenzoxazole resin currently utilized, there existed room which should be improved about the shape of the cured relief pattern of these phenol resins. (See Comparative Example 4 below).

  Accordingly, the present invention provides a photosensitive resin composition for providing a cured relief pattern having a good shape, which can be cured at a low temperature, and does not collapse the relief pattern after curing. It is an object of the present invention to provide a cured relief pattern forming method for forming a pattern using a resin composition, and a semiconductor device and a display device having the cured relief pattern.

  As a result of intensive studies and experiments in view of the problems of the prior art, the present inventor has used the above-mentioned photosensitive resin composition containing a phenol resin having a specific structure in combination with a specific photosensitive diazonaphthoquinone. The present inventors have found that the problem can be solved, and have made the present invention. That is, the present invention is as follows.

｛式（１）中、ａは、２又は３の整数であり、ｂは、０〜２の整数であり、２≦（ａ＋ｂ）≦４であり、Ｒ₁は、炭素数１〜２０の１価の有機基、ハロゲン原子、ニトロ基及びシアノ基から成る群から選ばれる１価の置換基を表し、ｂが２である場合には、２つのＲ₁は、互いに同一であるか、又は異なっていてよく、そしてＸは、不飽和結合を有していてもよい炭素数２〜１０の２価の鎖状脂肪族基、炭素数３〜２０の２価の脂環式基、下記一般式（２）：

（式（２）中、ｐは、１〜１０の整数である。）で表される２価のアルキレンオキシド基、及び芳香族基を有する２価の有機基から成る群から選ばれる少なくとも１つの２価の有機基を表す。｝
で表される構造を有し、そして該（Ｂ）感光性ジアゾナフトキノン化合物は、下記一般式（３）〜（７）：

｛式（３）中、Ｘ_１及びＸ_２は、それぞれ独立に、水素原子又は炭素数１〜６０の１価の有機基を表し、Ｘ_３及びＸ_４は、それぞれ独立に、水素原子又は炭素数１〜６０の１価の有機基を表し、ｒ１、ｒ２、ｒ３及びｒ４は、それぞれ独立に、０〜５の整数であり、ｒ３及びｒ４の少なくとも１つは、１〜５の整数であり、ｒ１＋ｒ３＝５であり、そしてｒ２＋ｒ４＝５である。｝

｛式（４）中、Ｚは、炭素数１〜２０の４価の有機基を表し、Ｘ_５、Ｘ_６、Ｘ_７及びＸ_８は、それぞれ独立に、炭素数１〜３０の１価の有機基を表し、ｒ６は、０又は１の整数であり、ｒ５、ｒ７、ｒ８及びｒ９は、それぞれ独立に、０〜３の整数であり、ｒ１０、ｒ１１、ｒ１２及びｒ１３は、それぞれ独立に、０〜２の整数であり、そしてｒ１０、ｒ１１、ｒ１２及びｒ１３の少なくとも１つは、１又は２である。｝

｛式（５）中、ｒ１４は、１〜５の整数を表し、ｒ１５は、３〜８の整数であり、（ｒ１４×ｒ１５）個のＬは、それぞれ独立に、炭素数１〜２０の１価の有機基を表し、（ｒ１５）個のＴは、それぞれ独立に、水素原子又は炭素数１〜２０の１価の有機基を表し、そして（ｒ１５）個のＳは、それぞれ独立に、水素原子又は炭素数１〜２０の１価の有機基を表す。｝

｛式（６）中、Ａは、脂肪族の３級又は４級炭素を含む２価の有機基を表し、そしてＭは、２価の有機基を表す。｝

｛式（７）中、ｒ１７、ｒ１８、ｒ１９及びｒ２０は、それぞれ独立に、０〜２の整数であり、ｒ１７、ｒ１８、ｒ１９及びｒ２０の少なくとも１つは、１又は２であり、Ｘ_１０〜Ｘ_１９は、それぞれ独立に、水素原子、ハロゲン原子、アルキル基、アルケニル基、アルコキシ基、アリル基及びアシル基から成る群から選択される少なくとも１つの１価の基を表し、そしてＹ_１〜Ｙ_３は、それぞれ独立に、単結合、−Ｏ−、−Ｓ−、−ＳＯ−、−ＳＯ_２−、−ＣＯ−、−ＣＯ_２−、シクロペンチリデン、シクロヘキシリデン、フェニレン及び炭素数１〜２０の２価の有機基から成る群から選択される少なくとも１つの２価の基を表す。｝
から成る群から選択される少なくとも１つのヒドロキシ化合物の１，２−ナフトキノンジアジド−４−スルホン酸エステル及び／又は１，２−ナフトキノンジアジド−５−スルホン酸エステルである、前記感光性樹脂組成物。 [1] A photosensitive resin composition comprising (A) a phenol resin, (B) a photosensitive diazonaphthoquinone compound and (C) a solvent, wherein the (A) phenol resin is represented by the following general formula (1):

{In Formula (1), a is an integer of 2 or 3, b is an integer of 0-2, 2 <= (a + b) <= 4, and R < ₁ > is C1-C20 1 Represents a monovalent substituent selected from the group consisting of a valent organic group, a halogen atom, a nitro group and a cyano group, and when b is 2, two R _{1 s} are the same or different from each other And X is a divalent chain aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, the following general formula (2):

(In formula (2), p is an integer of 1 to 10.) At least one selected from the group consisting of a divalent alkylene oxide group represented by formula (2) and a divalent organic group having an aromatic group. Represents a divalent organic group. }
And (B) the photosensitive diazonaphthoquinone compound has the following general formulas (3) to (7):

{In Formula (3), X ₁ and X ₂ each independently represent a hydrogen atom or a monovalent organic group having 1 to 60 carbon atoms, and X ₃ and X ₄ each independently represent a hydrogen atom or carbon. Represents a monovalent organic group of 1 to 60, and r1, r2, r3 and r4 are each independently an integer of 0 to 5, and at least one of r3 and r4 is an integer of 1 to 5 R1 + r3 = 5 and r2 + r4 = 5. }

{In Formula (4), Z represents a tetravalent organic group having 1 to 20 carbon _{atoms, X 5, X 6, X} 7 and _{X 8} are each independently a monovalent C1-30 Represents an organic group, r6 is an integer of 0 or 1, r5, r7, r8 and r9 are each independently an integer of 0 to 3, and r10, r11, r12 and r13 are each independently And is an integer of 0 to 2, and at least one of r10, r11, r12 and r13 is 1 or 2. }

{In Formula (5), r14 represents an integer of 1 to 5, r15 is an integer of 3 to 8, and (r14 × r15) L's are each independently 1 having 1 to 20 carbon atoms. (R15) Ts each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and (r15) Ss each independently represent a hydrogen atom. An atom or a monovalent organic group having 1 to 20 carbon atoms is represented. }

{In Formula (6), A represents a divalent organic group containing an aliphatic tertiary or quaternary carbon, and M represents a divalent organic group. }

{In Formula (7), r17, r18, r19 and r20 are each independently an integer of 0 to 2, and at least one of r17, r18, r19 and r20 is 1 or 2, and X ₁₀ to X ₁₉ each independently represents at least one monovalent group selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an allyl group and an acyl group, and Y _{1 to} Y ₃ are each independently a single bond, —O—, —S—, —SO—, —SO ₂ —, —CO—, —CO ₂ —, cyclopentylidene, cyclohexylidene, phenylene, and 1 to 3 carbon atoms. It represents at least one divalent group selected from the group consisting of 20 divalent organic groups. }
The photosensitive resin composition, which is 1,2-naphthoquinonediazide-4-sulfonic acid ester and / or 1,2-naphthoquinonediazide-5-sulfonic acid ester of at least one hydroxy compound selected from the group consisting of:

｛式（８）中、ｒ１６は、それぞれ独立に、０〜２の整数であり、そしてＸ_９は、それぞれ独立に、水素原子又は炭素数１〜２０の一価の有機基を表す。｝
で表される化合物である、［１］に記載の感光性樹脂組成物。 [2] The hydroxy compound represented by the general formula (3) is represented by the following general formula (8):

{In the formula (8), it is r16, each independently, an integer from 0-2, and _{X 9} each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. }
The photosensitive resin composition as described in [1] which is a compound represented by these.

から成る群から選択される少なくとも１つの４価の基である、［１］に記載の感光性樹脂組成物。 [3] In the general formula (4), Z represents the following formula:

The photosensitive resin composition according to [1], which is at least one tetravalent group selected from the group consisting of:

｛式（９）中、Ｒ_２、Ｒ_３、Ｒ_４及びＲ_５は、それぞれ独立に、水素原子、炭素数１〜１０の１価の脂肪族基、又は水素原子の一部若しくは全部がフッ素原子で置換されている炭素数１〜１０の１価の脂肪族基であり、ｎ_１は、０〜４の整数であり、Ｒ_６は、ハロゲン原子、水酸基又は１価の有機基から選択され、ｎ_１が１の整数である場合には、Ｒ_６は、水酸基、又は水酸基を有する１価の有機基であり、そしてｎ_１が２〜４の整数である場合には、Ｒ_６の少なくとも１つは、水酸基、又は水酸基を有する１価の有機基であり、かつ複数のＲ_６は、それぞれ同一であるか、又は異なっていてよい。｝で表される２価の基及び／又は下記一般式（１０）：

｛式（１０）中、Ｒ_７、Ｒ_８、Ｒ_９及びＲ_１０は、それぞれ独立に、水素原子、炭素数１〜１０の１価の脂肪族基、又は水素原子の一部若しくは全部がフッ素原子で置換されている炭素数１〜１０の１価の脂肪族基を表し、そしてＹは、単結合、フッ素原子で置換されていてもよい炭素数１〜１０の鎖状脂肪族基、フッ素原子で置換されていてもよい炭素数３〜２０の脂環式基、下記一般式（２）：

（式（２）中、ｐは、１〜１０の整数である。）で表されるアルキレンオキシド基、及び下記式（１１）：

で表される２価の基から成る群から選ばれる少なくとも１つの２価の有機基を表す。｝で表される２価の基である、［１］〜［３］のいずれか１項に記載の感光性樹脂組成物。 [4] In the general formula (1), X represents the following general formula (9):

{In Formula (9), R ₂ , R ₃ , R ₄ and R ₅ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a part or all of the hydrogen atoms are fluorine. A monovalent aliphatic group having 1 to 10 carbon atoms substituted with an atom, n ₁ is an integer of 0 to 4, and R ₆ is selected from a halogen atom, a hydroxyl group or a monovalent organic group; , N ₁ is an integer of 1, R ₆ is a hydroxyl group or a monovalent organic group having a hydroxyl group, and when n ₁ is an integer of 2 to 4, at least R ₆ One is a hydroxyl group or a monovalent organic group having a hydroxyl group, and the plurality of R ₆ may be the same or different from each other. } And / or the following general formula (10):

{In Formula (10), R ₇ , R ₈ , R ₉ and R ₁₀ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a part or all of the hydrogen atoms are fluorine. Represents a monovalent aliphatic group having 1 to 10 carbon atoms substituted with an atom, and Y represents a single bond, a chain aliphatic group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, fluorine C3-C20 alicyclic group which may be substituted by atom, the following general formula (2):

(In formula (2), p is an integer of 1 to 10.) and the following formula (11):

Represents at least one divalent organic group selected from the group consisting of divalent groups represented by: } The photosensitive resin composition of any one of [1]-[3] which is a bivalent group represented by these.

で表される２価の有機基である、［１］〜［４］のいずれか１項に記載の感光性樹脂組成物。 [5] In the general formula (1), X represents the following general formula (12):

The photosensitive resin composition of any one of [1]-[4] which is a bivalent organic group represented by these.

で表される２価の有機基である、［１］〜［５］のいずれか１項に記載の感光性樹脂組成物。 [6] In the general formula (1), X represents the following general formula (13):

The photosensitive resin composition of any one of [1]-[5] which is a bivalent organic group represented by these.

｛式（１４）中、Ｒ_１１は、炭化水素基又はアルコキシ基から選ばれる炭素数１〜１０の１価の基であり、ｎ_２は、２又は３の整数であり、ｎ_３は、０〜２の整数であり、ｍ_１は、１〜５００の整数であり、２≦（ｎ_２＋ｎ_３）≦４であり、そしてｎ_３が２である場合には、２つのＲ_１１は、互いに同一であるか、又は異なっていてよい。｝で表される構造及び下記一般式（１５）：

｛式（１５）中、Ｒ_１２及びＲ_１３は、炭化水素基又はアルコキシ基から選ばれる炭素数１〜１０の１価の基であり、ｎ_４は、２又は３の整数であり、ｎ_５は、０〜２の整数であり、ｎ_６は、０〜３の整数であり、ｍ_２は、１〜５００の整数であり、２≦（ｎ_４＋ｎ_５）≦４であり、ｎ_５が２である場合には、２つのＲ_１２は、互いに同一であるか、又は異なっていてよく、そしてｎ_６が２〜３である場合には、複数のＲ_１３は、それぞれ同一であるか、又は異なっていてよい。｝で表される構造の両方を同一樹脂骨格内に有するフェノール樹脂である、［１］〜［６］のいずれか１項に記載の感光性樹脂組成物。 [7] The (A) phenol resin is represented by the following general formula (14):

{In Formula (14), R ₁₁ is a monovalent group having 1 to 10 carbon atoms selected from a hydrocarbon group or an alkoxy group, n ₂ is an integer of 2 or 3, and n ₃ is 0 When m ₁ is an integer from ₁ to 500, 2 ≦ (n ₂ + n ₃ ) ≦ 4, and n ₃ is 2, the two R ₁₁ are They may be the same or different. } And the following general formula (15):

{Wherein _{(15), R 12} and _{R 13} is a monovalent group having 1 to 10 carbon atoms selected from hydrocarbon groups or alkoxy groups, _{n 4} is an integer of 2 or 3, _{n 5} Is an integer from 0 to 2, n ₆ is an integer from 0 to 3, m ₂ is an integer from 1 to 500, 2 ≦ (n ₄ + n ₅ ) ≦ 4, and n ₅ is When R 2, the two R ₁₂ may be the same or different from each other, and when n ₆ is 2 to 3, the plurality of R ₁₃ are each the same, Or it may be different. } The photosensitive resin composition of any one of [1]-[6] which is a phenol resin which has both the structures represented by} in the same resin frame | skeleton.

  [8] The photosensitive resin composition according to any one of [1] to [7], further comprising (D) a crosslinking agent.

  [9] The photosensitive resin composition according to any one of [1] to [8], further including (E) a thermal acid generator.

[10] The following steps:
(1) The process of forming the photosensitive resin layer containing the photosensitive resin composition of any one of [1]-[9] on a board | substrate,
(2) a step of exposing the photosensitive resin layer;
(3) developing the photosensitive resin layer to obtain a relief pattern;
(4) a step of heat-treating the relief pattern;
A method for producing a cured relief pattern.

  [11] A cured relief pattern produced by the method according to [10].

  [12] A semiconductor device comprising a semiconductor element and a cured film provided on the semiconductor element, wherein the cured film is the cured relief pattern according to [11].

  [13] A display device comprising a display element and a cured film provided on the display element, wherein the cured film is the cured relief pattern according to [11]. .

  The present invention provides a photosensitive resin composition that can be cured at a low temperature and that can provide a cured relief pattern having a good shape without filling the relief pattern after curing. The present invention also provides a method for forming a cured relief pattern using the photosensitive resin composition, and a semiconductor device and a display device having the cured relief pattern.

  Hereinafter, modes for carrying out the present invention (hereinafter abbreviated as “embodiments”) will be described in detail. In addition, this invention is not limited to the following embodiment, It can implement by changing variously within the range of the summary.

  In the embodiment, the photosensitive resin composition includes the following components (A) to (C), that is, (A) a phenol resin, (B) a photosensitive diazonaphthoquinone, and (C) a solvent. Hereinafter, each component will be described in order.

  Throughout the present specification, when a plurality of structures represented by the same symbol in the general formula are present in a molecule, they may be the same or different from each other.

｛式（１）中、ａは、２又は３の整数であり、ｂは、０〜２の整数であり、２≦（ａ＋ｂ）≦４であり、Ｒ₁は、炭素数１〜２０の１価の有機基、ハロゲン原子、ニトロ基及びシアノ基から成る群から選ばれる１価の置換基を表し、ｂが２である場合には、２つのＲ₁は、互いに同一であるか、又は異なっていてよく、そしてＸは、不飽和結合を有していてもよい炭素数２〜１０の２価の鎖状脂肪族基、炭素数３〜２０の２価の脂環式基、下記一般式（２）：

（式（２）中、ｐは、１〜１０の整数である。）で表される２価のアルキレンオキシド基、及び芳香族基を有する２価の有機基から成る群から選ばれる少なくとも１つの２価の有機基を表す。｝ (A) Phenolic resin In the embodiment, the phenolic resin (A) has a structure represented by the following general formula (1).

{In Formula (1), a is an integer of 2 or 3, b is an integer of 0-2, 2 <= (a + b) <= 4, and R < ₁ > is C1-C20 1 Represents a monovalent substituent selected from the group consisting of a valent organic group, a halogen atom, a nitro group and a cyano group, and when b is 2, two R _{1 s} are the same or different from each other And X is a divalent chain aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, the following general formula (2):

(In formula (2), p is an integer of 1 to 10.) At least one selected from the group consisting of a divalent alkylene oxide group represented by formula (2) and a divalent organic group having an aromatic group. Represents a divalent organic group. }

｛式（１６）中、Ｒ₁₄、Ｒ₁₅及びＲ₁₆は、それぞれ独立に、水素原子、不飽和結合を有していてもよい炭素数１〜１０の脂肪族基、炭素数３〜２０の脂環式基、又は炭素数６〜２０の芳香族基を表し、そしてＲ₁₇は、不飽和結合を有していてもよい炭素数１〜１０の２価の脂肪族基、炭素数３〜２０の２価の脂環式基、又は炭素数６〜２０の２価の芳香族基を表す。｝ In the general formula (1), R ₁ is limited as long as it is at least one monovalent substituent selected from the group consisting of a monovalent organic group having 1 to 20 carbon atoms, a halogen atom, a nitro group, and a cyano group. However, from the viewpoint of alkali solubility, a halogen atom, a nitro group, a cyano group, an aliphatic group having 1 to 10 carbon atoms which may have an unsaturated bond, an aromatic group having 6 to 20 carbon atoms, and It is preferably at least one monovalent substituent selected from the group consisting of four groups represented by the following general formula (16).

{In Formula (16), R ₁₄ , R ₁₅ and R ₁₆ are each independently a hydrogen atom, an aliphatic group having 1 to 10 carbon atoms which may have an unsaturated bond, or 3 to 20 carbon atoms. Represents an alicyclic group or an aromatic group having 6 to 20 carbon atoms, and R ₁₇ is a divalent aliphatic group having 1 to 10 carbon atoms which may have an unsaturated bond; 20 bivalent alicyclic group or a C6-C20 bivalent aromatic group is represented. }

  In the embodiment, in the general formula (1), a is not limited as long as it is an integer of 2 or 3, but is preferably 2 from the viewpoint of alkali solubility and elongation. Moreover, when a is 2, the substitution position between hydroxyl groups may be any of ortho, meta, and para positions, and when a is 3, the substitution position between hydroxyl groups is 1 , 2,3-position, 1,2,4-position and 1,3,5-position.

In the embodiment, in the general formula (1), b is not limited as long as it is an integer of 0 to 2, but is preferably 0 or 1 from the viewpoint of alkali solubility and elongation. When b is 2, two R _{1 s} may be the same or different from each other.

  Furthermore, in the embodiment, in the general formula (1), a and b satisfy the relationship of 2 ≦ (a + b) ≦ 4.

｛式（９）中、Ｒ_２、Ｒ_３、Ｒ_４及びＲ_５は、それぞれ独立に、水素原子、炭素数１〜１０の１価の脂肪族基、又は水素原子の一部若しくは全部がフッ素原子で置換されている炭素数１〜１０の１価の脂肪族基であり、ｎ_１は、０〜４の整数であり、Ｒ_６は、ハロゲン原子、水酸基又は１価の有機基から選択され、ｎ_１が１の整数である場合には、Ｒ_６は、水酸基、又は水酸基を有する１価の有機基であり、そしてｎ_１が２〜４の整数である場合には、Ｒ_６の少なくとも１つは、水酸基、又は水酸基を有する１価の有機基であり、かつ複数のＲ_６は、それぞれ同一であるか、又は異なっていてよい。｝

｛式（１０）中、Ｒ_７、Ｒ_８、Ｒ_９及びＲ_１０は、それぞれ独立に、水素原子、炭素数１〜１０の１価の脂肪族基、又は水素原子の一部若しくは全部がフッ素原子で置換されている炭素数１〜１０の１価の脂肪族基を表し、そしてＹは、単結合、フッ素原子で置換されていてもよい炭素数１〜１０の鎖状脂肪族基、フッ素原子で置換されていてもよい炭素数３〜２０の脂環式基、下記一般式（２）：

（式（２）中、ｐは、１〜１０の整数である。）で表されるアルキレンオキシド基、及び下記式（１１）：

で表される２価の基から成る群から選ばれる少なくとも１つの２価の有機基を表す。｝ In the embodiment, in the general formula (1), X is a divalent chain aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, or a divalent chain having 3 to 20 carbon atoms. It is at least one divalent organic group selected from the group consisting of an alicyclic group, a divalent alkylene oxide group represented by the general formula (2), and a divalent organic group having an aromatic group. Among these divalent organic groups, X is preferably at least one of organic groups represented by the following general formulas (9) and (10) from the viewpoint of the toughness of the cured film.

{In Formula (9), R ₂ , R ₃ , R ₄ and R ₅ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a part or all of the hydrogen atoms are fluorine. A monovalent aliphatic group having 1 to 10 carbon atoms substituted with an atom, n ₁ is an integer of 0 to 4, and R ₆ is selected from a halogen atom, a hydroxyl group or a monovalent organic group; , N ₁ is an integer of 1, R ₆ is a hydroxyl group or a monovalent organic group having a hydroxyl group, and when n ₁ is an integer of 2 to 4, at least R ₆ One is a hydroxyl group or a monovalent organic group having a hydroxyl group, and the plurality of R ₆ may be the same or different from each other. }

{In Formula (10), R ₇ , R ₈ , R ₉ and R ₁₀ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a part or all of the hydrogen atoms are fluorine. Represents a monovalent aliphatic group having 1 to 10 carbon atoms substituted with an atom, and Y represents a single bond, a chain aliphatic group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, fluorine C3-C20 alicyclic group which may be substituted by atom, the following general formula (2):

(In formula (2), p is an integer of 1 to 10.) and the following formula (11):

Represents at least one divalent organic group selected from the group consisting of divalent groups represented by: }

  In the general formula (10), Y is represented by a single bond, an alkylene oxide group represented by the general formula (2), and the above formula (11) from the viewpoint of the elongation of the cured film. Of the divalent groups, a divalent organic group selected from an ester group, an amide group or a sulfonyl group is preferred.

In the embodiment, in the general formula (1), X is preferably a divalent organic group represented by the general formula (9) or (10), and represented by the general formula (10). The divalent organic group is more preferably a divalent organic group represented by the following general formula (12) from the viewpoint of the elongation of the cured film, and further represented by the following general formula (13). Particularly preferred is a divalent organic group.

  In the general formula (1), it is preferable that the ratio of the portion containing the phenolic hydroxyl group and the portion represented by X is determined particularly from the viewpoint of elongation. More specifically, the proportion of the site represented by X is 20% by mass or more based on the total mass of the monomer units in the structure represented by the general formula (1) from the viewpoint of elongation. Is preferable, and it is more preferable that it is 30 mass% or more.

｛式（１４）中、Ｒ_１１は、炭化水素基又はアルコキシ基から選ばれる炭素数１〜１０の１価の基であり、ｎ_２は、２又は３の整数であり、ｎ_３は、０〜２の整数であり、ｍ_１は、１〜５００の整数であり、２≦（ｎ_２＋ｎ_３）≦４であり、そしてｎ_３が２である場合には、２つのＲ_１１は、互いに同一であるか、又は異なっていてよい。｝

｛式（１５）中、Ｒ_１２及びＲ_１３は、炭化水素基又はアルコキシ基から選ばれる炭素数１〜１０の１価の基であり、ｎ_４は、２又は３の整数であり、ｎ_５は、０〜２の整数であり、ｎ_６は、０〜３の整数であり、ｍ_２は、１〜５００の整数であり、２≦（ｎ_４＋ｎ_５）≦４であり、ｎ_５が２である場合には、２つのＲ_１２は、互いに同一であるか、又は異なっていてよく、そしてｎ_６が２〜３である場合には、複数のＲ_１３は、それぞれ同一であるか、又は異なっていてよい。｝ In addition, the (A) phenol resin having the structure represented by the general formula (1) has the same resin as both the structure represented by the following general formula (14) and the structure represented by the following general formula (15). It is particularly preferable to have it in the skeleton.

{In Formula (14), R ₁₁ is a monovalent group having 1 to 10 carbon atoms selected from a hydrocarbon group or an alkoxy group, n ₂ is an integer of 2 or 3, and n ₃ is 0 When m ₁ is an integer from ₁ to 500, 2 ≦ (n ₂ + n ₃ ) ≦ 4, and n ₃ is 2, the two R ₁₁ are They may be the same or different. }

{Wherein _{(15), R 12} and _{R 13} is a monovalent group having 1 to 10 carbon atoms selected from hydrocarbon groups or alkoxy groups, _{n 4} is an integer of 2 or 3, _{n 5} Is an integer from 0 to 2, n ₆ is an integer from 0 to 3, m ₂ is an integer from 1 to 500, 2 ≦ (n ₄ + n ₅ ) ≦ 4, and n ₅ is When R 2, the two R ₁₂ may be the same or different from each other, and when n ₆ is 2 to 3, the plurality of R ₁₃ are each the same, Or it may be different. }

M ₁ and m ₂ in the above general formula (15) in the general formula (14) in represents the total number of the respective repeating units in the backbone of the phenolic resin, toughness of the film after curing and, an aqueous alkaline solution From the standpoint of solubility, each is independently an integer between 1 and 500, the lower limit is preferably 2, more preferably 3, and the upper limit is preferably 450, More preferred is 400, and even more preferred is 350. m ₁ and m ₂ are preferably 1 or more from the viewpoint of toughness of the cured film, and are preferably 500 or less from the viewpoint of solubility in an alkaline aqueous solution. The position of the structural unit represented by the general formula (14) and the structural unit represented by the general formula (15) in the polymer may be a block or random.

The (A) phenol resin having both the structure represented by the general formula (14) and the structure represented by the formula (15) in the same resin skeleton has a structure represented by the general formula (14). The higher the molar ratio, the better the physical properties of the cured film and the better the heat resistance. On the other hand, the higher the molar ratio of the structure represented by the general formula (15), the better the alkali solubility. Yes, excellent pattern shape after curing. Therefore, as a range of the ratio of the structure represented by the general formula (14) and the structure represented by the general formula (15), m ₁ : m ₂ = 90: 10 to 20:80 is a physical property of the cured film. From the viewpoint of the above, m ₁ : m ₂ = 80: 20 to 40:60 is more preferable from the viewpoint of the physical properties and alkali solubility of the cured film, and m ₁ : m ₂ = 70: 30 to 50:50 is the cured film. It is particularly preferable from the viewpoints of physical properties, pattern shape, and alkali solubility.

  Typically, a phenol resin can be synthesized by polymerizing a phenol compound and a copolymer component. Specifically, the copolymer component includes a compound having an aldehyde group (for example, a compound that decomposes to produce an aldehyde compound such as trioxane), a compound having a ketone group, and two methylol groups in the molecule. And a compound having one or more compounds selected from the group consisting of a compound having two alkoxymethyl groups in the molecule, and a compound having two haloalkyl groups in the molecule. The copolymer component is preferably a component comprising at least one of these. For example, for phenol and / or phenol derivatives (hereinafter also referred to as “phenol compounds”) as shown below, for example, aldehyde compounds, ketone compounds, methylol compounds, alkoxymethyl compounds, diene compounds, haloalkyl compounds, etc. By polymerizing the copolymer component, the (A) phenol resin can be obtained. From the viewpoint of reaction control and the stability of the obtained phenolic resin and phenolic resin composition, the charged molar ratio of the phenolic compound and the copolymer component is preferably 5: 1 to 1.01: 1. More preferably, it is 5: 1 to 1.1: 1.

  In the embodiment, the weight average molecular weight of the (A) phenol resin is preferably 700 to 100,000, more preferably 1,500 to 80,000, still more preferably 2,000 to 50,000. is there. (A) The weight average molecular weight of the phenol resin is preferably 700 or more from the viewpoint of the elongation of the cured film, and is 100,000 or less from the viewpoint of alkali solubility of the photosensitive resin composition. It is preferable.

  The weight average molecular weight is measured by gel permeation chromatography (GPC) and can be calculated from a calibration curve prepared using standard polystyrene.

  Examples of the phenol compound that can be used to obtain the phenol resin (A) include resorcinol, xylenol, catechol, methyl catechol, ethyl catechol, hexyl catechol, benzyl catechol, nitrobenzyl catechol, methyl resorcinol, ethyl resorcinol, hexyl resorcinol, benzyl Resorcinol, nitrobenzyl resorcinol, hydroquinone, caffeic acid, dihydroxybenzoic acid, methyl dihydroxybenzoate, ethyl dihydroxybenzoate, butyl dihydroxybenzoate, propyl dihydroxybenzoate, benzyl dihydroxybenzoate, dihydroxybenzamide, dihydroxybenzaldehyde, dihydroxyacetophenone, Dihydroxybenzophenone, dihydroxyben Nitrile, N- (dihydroxyphenyl) -5-norbornene-2,3-dicarboximide, N- (dihydroxyphenyl) -5-methyl-5-norbornene-2,3-dicarboximide, nitrocatechol, fluorocatechol, Chlorocatechol, bromocatechol, trifluoromethylcatechol, nitroresorcinol, fluororesorcinol, chlororesorcinol, bromoresorcinol, trifluoromethylresorcinol, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, trihydroxybenzoic acid, tri Methyl hydroxybenzoate, ethyl trihydroxybenzoate, butyl trihydroxybenzoate, propyl trihydroxybenzoate, benzyl trihydroxybenzoate, trihydroxy Nzuamido, trihydroxy benzaldehyde, trihydroxy acetophenone, trihydroxybenzophenone, trihydroxy benzonitrile and the like.

  Examples of the aldehyde compound include acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, pentanal, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbornene-2-carboxyl Examples include aldehyde, malondialdehyde, succindialdehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, terephthalaldehyde, and the like.

  Examples of the ketone compound include acetone, methyl ethyl ketone, diethyl ketone, dipropyl ketone, dicyclohexyl ketone, dibenzyl ketone, cyclopentanone, cyclohexanone, bicyclohexanone, cyclohexanedione, 3-butyn-2-one, 2-norbornanone, Adamantanone, 2,2-bis (4-oxocyclohexyl) propane, and the like.

  Examples of the methylol compound include 2,6-bis (hydroxymethyl) -p-cresol, 2,6-bis (hydroxymethyl) -4-ethylphenol, and 2,6-bis (hydroxymethyl) -4-propyl. Phenol, 2,6-bis (hydroxymethyl) -4-n-butylphenol, 2,6-bis (hydroxymethyl) -4-t-butylphenol, 2,6-bis (hydroxymethyl) -4-methoxyphenol, 2 2,6-bis (hydroxymethyl) -4-ethoxyphenol, 2,6-bis (hydroxymethyl) -4-propoxyphenol, 2,6-bis (hydroxymethyl) -4-n-butoxyphenol, 2,6- Bis (hydroxymethyl) -4-t-butoxyphenol, 1,3-bis (hydroxymethyl) urea, ribitol, arabitol, allitol, 2, -Bis (hydroxymethyl) butyric acid, 2-benzyloxy-1,3-propanediol, 2,2-dimethyl-1,3-propanediol, 2,2-diethyl-1,3-propanediol, monoacetin, 2- Methyl-2-nitro-1,3-propanediol, 5-norbornene-2,2-dimethanol, 5-norbornene-2,3-dimethanol, pentaerythritol, 2-phenyl-1,3-propanediol, tri Methylolethane, trimethylolpropane, 3,6-bis (hydroxymethyl) durene, 2-nitro-p-xylylene glycol, 1,10-dihydroxydecane, 1,12-dihydroxydodecane, 1,4-bis (hydroxymethyl) ) Cyclohexane, 1,4-bis (hydroxymethyl) cyclohexene, 1,6- (Hydroxymethyl) adamantane, 1,4-benzenedimethanol, 1,3-benzenedimethanol, 2,6-bis (hydroxymethyl) -1,4-dimethoxybenzene, 2,3-bis (hydroxymethyl) naphthalene 2,6-bis (hydroxymethyl) naphthalene, 1,8-bis (hydroxymethyl) anthracene, 2,2′-bis (hydroxymethyl) diphenyl ether, 4,4′-bis (hydroxymethyl) diphenyl ether, 4,4 '-Bis (hydroxymethyl) diphenylthioether, 4,4'-bis (hydroxymethyl) benzophenone, 4-hydroxymethylbenzoic acid-4'-hydroxymethylphenyl, 4-hydroxymethylbenzoic acid-4'-hydroxymethylanilide, 4,4'-bis (hydroxymethyl) Phenylurea, 4,4′-bis (hydroxymethyl) phenylurethane, 1,8-bis (hydroxymethyl) anthracene, 4,4′-bis (hydroxymethyl) biphenyl, 2,2′-dimethyl-4,4 ′ -Bis (hydroxymethyl) biphenyl, 2,2-bis (4-hydroxymethylphenyl) propane, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene glycol, etc. Is mentioned.

  Examples of the alkoxymethyl compound include 2,6-bis (methoxymethyl) -p-cresol, 2,6-bis (methoxymethyl) -4-ethylphenol, and 2,6-bis (methoxymethyl) -4- Propylphenol, 2,6-bis (methoxymethyl) -4-n-butylphenol, 2,6-bis (methoxymethyl) -4-t-butylphenol, 2,6-bis (methoxymethyl) -4-methoxyphenol, 2,6-bis (methoxymethyl) -4-ethoxyphenol, 2,6-bis (methoxymethyl) -4-propoxyphenol, 2,6-bis (methoxymethyl) -4-n-butoxyphenol, 2,6 -Bis (methoxymethyl) -4-t-butoxyphenol, 1,3-bis (methoxymethyl) urea, 2,2-bis (methoxymethyl) butyric acid, 2,2-bis (methoxy) Til) -5-norbornene, 2,3-bis (methoxymethyl) -5-norbornene, 1,4-bis (methoxymethyl) cyclohexane, 1,4-bis (methoxymethyl) cyclohexene, 1,6-bis (methoxy) Methyl) adamantane, 1,4-bis (methoxymethyl) benzene, 1,3-bis (methoxymethyl) benzene, 2,6-bis (methoxymethyl) -1,4-dimethoxybenzene, 2,3-bis (methoxy) Methyl) naphthalene, 2,6-bis (methoxymethyl) naphthalene, 1,8-bis (methoxymethyl) anthracene, 2,2′-bis (methoxymethyl) diphenyl ether, 4,4′-bis (methoxymethyl) diphenyl ether, 4,4′-bis (methoxymethyl) diphenylthioether, 4,4′-bis (methoxy) Til) benzophenone, 4-methoxymethylbenzoic acid-4′-methoxymethylphenyl, 4-methoxymethylbenzoic acid-4′-methoxymethylanilide, 4,4′-bis (methoxymethyl) phenylurea, 4,4′- Bis (methoxymethyl) phenylurethane, 1,8-bis (methoxymethyl) anthracene, 4,4′-bis (methoxymethyl) biphenyl, 2,2′-dimethyl-4,4′-bis (methoxymethyl) biphenyl, 2,2-bis (4-methoxymethylphenyl) propane, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether And ether, tripropylene glycol dimethyl ether, and tetrapropylene glycol dimethyl ether.

  Examples of the diene compound include butadiene, pentadiene, hexadiene, heptadiene, octadiene, 3-methyl-1,3-butadiene, 1,3-butanediol-dimethacrylate, 2,4-hexadien-1-ol, and methyl. Cyclohexadiene, cyclopentadiene, cyclohexadiene, cyclooctadiene, dicyclopentadiene, 1-hydroxydicyclopentadiene, 1-methylcyclopentadiene, methyldicyclopentadiene, diallyl ether, diallyl sulfide, diallyl adipate, 2,5-norbornadiene , Tetrahydroindene, 5-ethylidene-2-norbornene, 5-vinyl-2-norbornene, triallyl cyanurate, diallyl isocyanurate, triallyl isocyanurate, isocyanuric Diallyl propyl and the like.

  Examples of the haloalkyl compound include xylene dichloride, bischloromethyldimethoxybenzene, bischloromethyldurene, bischloromethylbiphenyl, bischloromethyl-biphenylcarboxylic acid, bischloromethyl-biphenyldicarboxylic acid, bischloromethyl-methylbiphenyl, Examples include bischloromethyl-dimethylbiphenyl, bischloromethylanthracene, ethylene glycol bis (chloroethyl) ether, diethylene glycol bis (chloroethyl) ether, triethylene glycol bis (chloroethyl) ether, tetraethylene glycol bis (chloroethyl) ether, and the like.

  (A) A phenol resin can be obtained by condensing the above-mentioned phenol compound and the above-mentioned copolymerization component by dehydration, dehydrohalogenation or dealcoholization, or by polymerizing while cleaving the unsaturated bond. A catalyst may be used during the polymerization. Examples of the catalyst include an acidic catalyst and an alkaline catalyst. Examples of the acidic catalyst include hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, phosphorous acid, methanesulfonic acid, p-toluenesulfonic acid, dimethyl sulfuric acid, diethyl sulfuric acid, acetic acid, oxalic acid, 1-hydroxyethylidene-1,1. Examples include '-diphosphonic acid, zinc acetate, boron trifluoride, boron trifluoride / phenol complex, boron trifluoride / ether complex, and the like. On the other hand, examples of the alkaline catalyst include lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, barium hydroxide, sodium carbonate, triethylamine, pyridine, 4-N, N-dimethylaminopyridine, piperidine, Piperazine, 1,4-diazabicyclo [2.2.2] octane, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene, Ammonia, hexamethylenetetramine and the like can be mentioned.

  In an embodiment, (A) the amount of the catalyst used to obtain the phenol resin is 0.01 to the number of moles of the aldehyde compound, ketone compound, methylol compound, alkoxymethyl compound, diene compound or haloalkyl compound. The range is preferably from mol% to 100 mol%.

  (A) When performing the synthesis reaction of a phenol resin, an organic solvent can be used as needed. Specific examples of the organic solvent that can be used include, but are not limited to, bis (2-methoxyethyl) ether, methyl cellosolve, ethyl cellosolve, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol dimethyl ether, dipropylene glycol. Examples include dimethyl ether, cyclohexanone, cyclopentanone, toluene, xylene, γ-butyrolactone, N-methyl-2-pyrrolidone and the like. The amount of these organic solvents to be used is usually 10 parts by mass to 1000 parts by mass, preferably 20 parts by mass to 500 parts by mass, when the total mass of the charged raw materials is 100 parts by mass. In the synthesis reaction of (A) phenol resin, the reaction temperature is usually preferably 40 ° C to 250 ° C, more preferably 100 ° C to 200 ° C, and the reaction time is approximately 1 hour. 10 hours is preferable.

  The (A) phenol resin may be a polymer obtained by polymerizing a phenol compound that is not a raw material having the structure of the general formula (1), for example, a monohydric phenol within a range not impairing the effects of the present invention. The range that does not impair the effects of the present invention is, for example, 30% or less of the total number of moles of the phenol compound that is a raw material for the (A) phenol resin.

(B) Photosensitive diazonaphthoquinone compound (B) The photosensitive diazonaphthoquinone compound is a 1,2-naphthoquinonediazide-4-sulfonic acid ester of a hydroxy compound having a specific structure described later, and 1,2-hydroxy compound of the hydroxy compound. It is at least one compound selected from the group consisting of naphthoquinonediazide-5-sulfonic acid ester (hereinafter also referred to as “NQD compound of hydroxy compound”).

  The NQD product of the hydroxy compound can be obtained by reacting the naphthoquinone diazide sulfonyl chloride with the hydroxy compound after converting the naphthoquinone diazide sulfonic acid compound to sulfonyl chloride with chlorosulfonic acid or thionyl chloride according to a conventional method. For example, a hydroxy compound and a predetermined amount of 1,2-naphthoquinonediazide-5-sulfonyl chloride or 1,2-naphthoquinonediazide-4-sulfonyl chloride in a solvent such as dioxane, acetone or tetrahydrofuran, and a basic such as triethylamine The reaction can be carried out in the presence of a catalyst for esterification, and the resulting product can be obtained by washing with water and drying.

  In the photosensitive resin composition, (B) the photosensitive diazonaphthoquinone compound, when combined with the (A) phenol resin, exhibits a high sensitivity and gives a good relief pattern that does not swell with an alkaline developer. Can do.

｛式（３）中、Ｘ_１及びＸ_２は、それぞれ独立に、水素原子又は炭素数１〜６０（好ましくは、炭素数１〜３０）の１価の有機基を表し、Ｘ_３及びＸ_４は、それぞれ独立に、水素原子又は炭素数１〜６０（好ましくは、炭素数１〜３０）の１価の有機基を表し、ｒ１、ｒ２、ｒ３及びｒ４は、それぞれ独立に、０〜５の整数であり、ｒ３及びｒ４の少なくとも１つは、１〜５の整数であり、ｒ１＋ｒ３＝５であり、そしてｒ２＋ｒ４＝５である。｝

｛式（４）中、Ｚは、炭素数１〜２０の４価の有機基を表し、Ｘ_５、Ｘ_６、Ｘ_７及びＸ_８は、それぞれ独立に、炭素数１〜３０の１価の有機基を表し、ｒ６は、０又は１の整数であり、ｒ５、ｒ７、ｒ８及びｒ９は、それぞれ独立に、０〜３の整数であり、ｒ１０、ｒ１１、ｒ１２及びｒ１３は、それぞれ独立に、０〜２の整数であり、そしてｒ１０、ｒ１１、ｒ１２及びｒ１３の全てが０になることはない。｝

｛式（５）中、ｒ１４は、１〜５の整数を表し、ｒ１５は、３〜８の整数を表し、（ｒ１４×ｒ１５）個のＬは、それぞれ独立に、炭素数１〜２０の１価の有機基を表し、（ｒ１５）個のＴは、それぞれ独立に、水素原子又は炭素数１〜２０の１価の有機基を表し、そして（ｒ１５）個のＳは、それぞれ独立に、水素原子又は炭素数１〜２０の１価の有機基を表す。｝

｛式（６）中、Ａは、脂肪族の３級又は４級炭素を含む２価の有機基を表し、そしてＭは、２価の有機基を表し、好ましくは下記化学式：

で表される３つの基から選択される少なくとも１つの２価の基を表す。｝

｛式（７）中、ｒ１７、ｒ１８、ｒ１９及びｒ２０は、それぞれ独立に、０〜２の整数であり、ｒ１７、ｒ１８、ｒ１９及びｒ２０の少なくとも１つは、１又は２であり、Ｘ_１０〜Ｘ_１９は、それぞれ独立に、水素原子、ハロゲン原子、アルキル基、アルケニル基、アルコキシ基、アリル基及びアシル基から成る群から選択される少なくとも１つの１価の基を表し、そしてＹ_１〜Ｙ_３は、それぞれ独立に、単結合、−Ｏ−、−Ｓ−、−ＳＯ−、−ＳＯ_２−、−ＣＯ−、−ＣＯ_２−、シクロペンチリデン、シクロヘキシリデン、フェニレン及び炭素数１〜２０の２価の有機基から成る群から選択される少なくとも１つの２価の基を表す。｝ In the embodiment, (B) the photosensitive diazonaphthoquinone compound is a 1,2-naphthoquinonediazide-4-sulfonic acid ester of a hydroxy compound represented by the following general formulas (3) to (7) and / or 1,2 -It is preferable that it is a naphthoquinone diazide-5-sulfonic acid ester compound.

{In Formula (3), X ₁ and X ₂ each independently represent a hydrogen atom or a monovalent organic group having 1 to 60 carbon atoms (preferably 1 to 30 carbon atoms), and X ₃ and X ₄ Each independently represents a hydrogen atom or a monovalent organic group having 1 to 60 carbon atoms (preferably 1 to 30 carbon atoms), and r1, r2, r3 and r4 each independently represents 0 to 5 carbon atoms. An integer, at least one of r3 and r4 is an integer from 1 to 5, r1 + r3 = 5 and r2 + r4 = 5. }

{In Formula (4), Z represents a tetravalent organic group having 1 to 20 carbon _{atoms, X 5, X 6, X} 7 and _{X 8} are each independently a monovalent C1-30 Represents an organic group, r6 is an integer of 0 or 1, r5, r7, r8 and r9 are each independently an integer of 0 to 3, and r10, r11, r12 and r13 are each independently It is an integer from 0 to 2, and all of r10, r11, r12 and r13 cannot be zero. }

{In Formula (5), r14 represents an integer of 1 to 5, r15 represents an integer of 3 to 8, and (r14 × r15) L's are each independently 1 of 1 to 20 carbon atoms. (R15) Ts each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and (r15) Ss each independently represent a hydrogen atom. An atom or a monovalent organic group having 1 to 20 carbon atoms is represented. }

{In Formula (6), A represents a divalent organic group containing an aliphatic tertiary or quaternary carbon, and M represents a divalent organic group, preferably the following chemical formula:

Represents at least one divalent group selected from the three groups represented by: }

{In Formula (7), r17, r18, r19 and r20 are each independently an integer of 0 to 2, and at least one of r17, r18, r19 and r20 is 1 or 2, and X ₁₀ to X ₁₉ each independently represents at least one monovalent group selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an allyl group and an acyl group, and Y _{1 to} Y ₃ are each independently a single bond, —O—, —S—, —SO—, —SO ₂ —, —CO—, —CO ₂ —, cyclopentylidene, cyclohexylidene, phenylene, and 1 to 3 carbon atoms. It represents at least one divalent group selected from the group consisting of 20 divalent organic groups. }

｛式中、Ｘ_２０及びＸ_２１は、それぞれ独立に、水素原子、アルキル基、アルケニル基、アリール基、及び置換アリール基から成る群から選択される少なくとも１つの１価の基を表し、Ｘ_２２、Ｘ_２３、Ｘ_２４及びＸ_２５は、それぞれ独立に、水素原子又はアルキル基を表し、ｒ２１は、１〜５の整数であり、そしてＸ_２６、Ｘ_２７、Ｘ_２８及びＸ_２９は、それぞれ独立に、水素原子又はアルキル基を表す。｝
で表される３つの２価の有機基から選択される少なくとも１つであることが好ましい。 In a further embodiment, in the general formula (7), Y _{1 to} Y ₃ are each independently the following general formula:

{Wherein, X ₂₀ and X ₂₁ each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, and at least one monovalent group selected from the group consisting of substituted aryl group, X ₂₂ , X ₂₃ , X ₂₄ and X ₂₅ each independently represent a hydrogen atom or an alkyl group, r 21 is an integer of 1 to 5, and X ₂₆ , X ₂₇ , X ₂₈ and X ₂₉ are each independently Represents a hydrogen atom or an alkyl group. }
It is preferable that it is at least 1 selected from three divalent organic groups represented by these.

｛式（８）中、ｒ１６は、それぞれ独立に、０〜２の整数であり、そしてＸ_９は、それぞれ独立に、水素原子又は炭素数１〜２０の一価の有機基を表し、Ｘ_９が複数で存在する場合には複数のＸ_９は、それぞれ同一であるか、又は異なっていてよく、そしてＸ_９は、下記化学式：

（式中、ｒ１８は、０〜２の整数であり、Ｘ_３１は、水素原子、アルキル基、及びシクロアルキル基から成る群から選ばれた少なくとも１つの１価の有機基を表し、そしてｒ１８が２である場合には、２つのＸ_３１は、互いに同一であるか、又は異なっていてよい。）
で表される１価の有機基であることが好ましい。｝

｛式（１７）中、Ｘ_３２は、水素原子、炭素数１〜２０のアルキル基、炭素数１〜２０のアルコキシ基及び炭素数１〜２０のシクロアルキル基から成る群から選ばれた少なくとも１つの１価の有機基を表す。｝

｛式（１８）中、ｒ１９は、それぞれ独立に、０〜２の整数であり、Ｘ_３３は、それぞれ独立に、水素原子又は下記一般式：

（式中、ｒ２０は、０〜２の整数であり、Ｘ_３５は、水素原子、アルキル基及びシクロアルキル基から成る群から選ばれる少なくとも１つを表し、そしてｒ２０が２である場合には、２つのＸ_３５は、互いに同一であるか、又は異なっていてよい。）で表される１価の有機基を表し、そしてＸ_３４は、水素原子、炭素数１〜２０のアルキル基、炭素数１〜２０のシクロアルキル基から成る群から選ばれる少なくとも１つを表す。｝

Examples of the compound represented by the general formula (3) include hydroxy compounds represented by the following formulas (8) and (17) to (20).

{In the formula (8), is r16, each independently, an integer from 0-2, and _{X 9} each independently represent a hydrogen atom or a monovalent organic group having a carbon number of 1 to 20, _{X 9} When a plurality of are present, the plurality of X ₉ may be the same or different from each other, and X ₉ has the following chemical formula:

(Wherein, r18 is an integer of 0 to 2, X ₃₁ is a hydrogen atom, an alkyl group, and represents at least one monovalent organic group selected from the group consisting of cycloalkyl, and r18 is If it is 2, the two X ₃₁ may be the same or different from each other.)
It is preferable that it is a monovalent organic group represented by these. }

{In Formula (17), X ₃₂ is at least 1 selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and a cycloalkyl group having 1 to 20 carbon atoms. Represents one monovalent organic group. }

{Wherein (18), r19 is independently an integer of 0 to _{2, X 33} each independently represent a hydrogen atom or the following general formula:

(Wherein, the r20, is an integer of 0 to 2, when X ₃₅ is a hydrogen atom, at least one selected from an alkyl group, and the group consisting of cycloalkyl, and r20 is 2, Two X ₃₅ may be the same or different from each other.) Represents a monovalent organic group represented by: and X ₃₄ represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a carbon number. It represents at least one selected from the group consisting of 1 to 20 cycloalkyl groups. }

  Moreover, as a compound represented by the said Formula (20), p-cumyl phenol is mentioned, for example.

As the compound represented by the above formula (8), the hydroxy compounds represented by the following formulas (21) to (23) have high sensitivity when converted into NQD compounds, and are precipitated in the photosensitive resin composition. It is preferable because of its low nature (NQD product of polyhydroxy compound described in Patent Document 4).

As the compound represented by the above formula (17), the hydroxy compound represented by the following formula (24) has high sensitivity when made into an NQD compound and has low precipitation in the photosensitive resin composition. To NQD of a polyhydroxy compound described in Patent Document 5.

As the compound represented by the above (18), the hydroxy compound represented by the following formulas (25) to (27) has high sensitivity when converted into an NQD compound, and is precipitated in the photosensitive resin composition. Is preferable because it is low (NQD product of polyhydroxy compound described in Patent Document 6).

で表される構造を有する４価の基であることが好ましい。 In the general formula (4), Z is not particularly limited as long as it is a tetravalent organic group having 1 to 20 carbon atoms, but from the viewpoint of sensitivity, the following formula:

It is preferable that it is a tetravalent group which has a structure represented by these.

Among the compounds represented by the general formula (4), the hydroxy compounds represented by the following formulas (28) to (31) have high sensitivity when converted into NQD compounds, and in the photosensitive resin composition. This is preferable because of its low precipitation property (it is an NQD product of a polyhydroxy compound described in Patent Document 7).

｛式中、ｒ４０は、それぞれ独立に、０〜９の整数である。｝ As a compound represented by the said General formula (5), the sensitivity when the hydroxy compound represented by following formula (32) is made into NQD thing is high, and the precipitation property in the photosensitive resin composition is low. (NQD product of polyhydroxy compound described in Patent Document 8)

{In formula, r40 is an integer of 0-9 each independently. }

As the compound represented by the general formula (6), the hydroxy compound represented by the following formulas (33) and (34) has high sensitivity when converted into an NQD product, and in the photosensitive resin composition. This is preferable because of low precipitation.

Specific examples of the compound represented by the general formula (7) include NQD compounds of polyhydroxy compounds described in Patent Document 9. Among these compounds, NQD compounds of polyhydroxy compounds represented by the following formula (35) are preferable because of high sensitivity and low precipitation in the photosensitive resin composition.

  (B) In the photosensitive diazonaphthoquinone compound, the 1,2-naphthoquinonediazidosulfonyl group may be either a 1,2-naphthoquinonediazide-5-sulfonyl group or a 1,2-naphthoquinonediazide-4-sulfonyl group. . Since the 1,2-naphthoquinonediazide-4-sulfonyl group can absorb the i-line region of a mercury lamp, it is suitable for i-line exposure. On the other hand, the 1,2-naphthoquinonediazide-5-sulfonyl group can absorb even the g-line region of a mercury lamp and is suitable for exposure with g-line.

  In the embodiment, it is preferable to select one or both of 1,2-naphthoquinonediazide-4-sulfonic acid ester compound and 1,2-naphthoquinonediazide-5-sulfonic acid ester compound depending on the wavelength to be exposed. Further, a 1,2-naphthoquinonediazide sulfonic acid ester compound having a 1,2-naphthoquinonediazide-4-sulfonyl group and a 1,2-naphthoquinonediazide-5-sulfonyl group in the same molecule can be used, A 2-naphthoquinonediazide-4-sulfonic acid ester compound and a 1,2-naphthoquinonediazide-5-sulfonic acid ester compound may be mixed and used.

  (B) In the photosensitive diazonaphthoquinone compound, the average esterification rate of the naphthoquinone diazide sulfonyl ester of the hydroxy compound is preferably 10% to 100%, and preferably 20% to 100% from the viewpoint of development contrast. Further preferred.

  In embodiment, the compounding quantity of (B) photosensitive diazonaphthoquinone compound in the photosensitive resin composition is 0.1 mass part-70 mass parts with respect to 100 mass parts of (A) phenol resin, Preferably Is 1 to 40 parts by mass, more preferably 3 to 30 parts by mass. If this compounding amount is 0.1 parts by mass or more, good sensitivity can be obtained. On the other hand, if it is 70 parts by mass or less, it is preferable because the mechanical properties of the cured film are good.

  (B) Among the hydroxy compounds described above, in order to form a photosensitive diazonaphthoquinone compound, the above formulas (19) to (22) and (28) to (31) are used from the viewpoint of the shape of the cured relief pattern. ), (33) and (35), and a compound represented by formula (36) described later (see Synthesis Example 9) are preferred. The 1,2-naphthoquinone diazide sulfonic acid esters of these hydroxy compounds are not restricted by the mechanism of action, but it is considered that a crosslinking reaction derived from the (B) photosensitive diazonaphthoquinone compound occurs during thermal curing. Therefore, it is preferable.

(C) Solvent Examples of the (C) solvent include amides, sulfoxides, ureas, ketones, esters, lactones, ethers, halogenated hydrocarbons, hydrocarbons and the like. More specifically, the solvent (C) includes N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, dimethyl sulfoxide, tetramethylurea, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexane. Pentanone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, ethyl lactate, methyl lactate, butyl lactate, γ-butyrolactone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, benzyl alcohol, phenyl glycol, tetrahydroflur Furyl alcohol, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, morpholine, dichloromethane, 1,2-dichloro Tan, 1,4-dichloro butane, chlorobenzene, o- dichlorobenzene, anisole, hexane, may be used heptane, benzene, toluene, xylene, mesitylene and the like. Among these, N-methyl-2-pyrrolidone, dimethyl sulfoxide, tetramethylurea, butyl acetate, ethyl lactate, γ-butyrolactone from the viewpoints of resin solubility, resin composition stability, and adhesion to a substrate. , Propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, diethylene glycol dimethyl ether, benzyl alcohol, phenyl glycol, and tetrahydrofurfuryl alcohol are preferred.

  In embodiment, the compounding quantity of the solvent in the photosensitive resin composition becomes like this. Preferably it is 100 mass parts-1000 mass parts with respect to 100 mass parts of (A) phenol resin, More preferably, it is 120 mass parts-700. It is a mass part, More preferably, it is the range of 125 mass parts-500 mass parts.

[Other ingredients]
The photosensitive resin composition of the present invention can contain (D) a cross-linking agent, (E) a thermal acid generator, a silane coupling agent, a dye, a surfactant, and a dissolution accelerator, if necessary. It is.

  (D) The crosslinking agent can be crosslinked with the phenol resin when the relief pattern formed using the photosensitive resin composition is heated and cured, or the crosslinking agent itself forms a crosslinked network. Refers to a compound capable of (D) The crosslinking agent takes a structure having two or more crosslinking groups in the molecule, and can further improve the thermal properties, mechanical properties or chemical resistance of the cured film formed from the photosensitive resin composition. .

  (D) The crosslinking agent is not particularly limited because (A) a compound capable of crosslinking with the phenol resin or a compound capable of forming a crosslinked network by itself can be used. Examples thereof include a methylol group and / or alkoxymethyl group-containing compound, an oxirane compound, an isocyanate group-containing compound, and a bismaleimide compound.

  Examples of the methylol group and / or alkoxymethyl group-containing compound include Cymel (registered trademark) 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65, 300, My Coat 102, 105 (Mitsui Cytec Co., Ltd.), Nicalac (registered trademark) MX-270, -280, -290, Nicarak MS-11, Nicarac MW-30,- 100, −300, −390, −750 (manufactured by Sanwa Chemical Co., Ltd.), DML-OCHP, DML-MBPC, DML-BPC, DML-PEP, DML-34X, DML-PSBP, DML-PTBP, DML- PCHP, DML-POP, DML-PFP, DML-MB C, BisCMP-F, DML-BisOC-Z, DML-BisOCHP-Z, DML-BisOC-P, DMOM-PTBT, TMOM-BP, TMOM-BPA, TML-BPAF-MF (manufactured by Honshu Chemical Industry Co., Ltd.) , Benzenedimethanol, bis (hydroxymethyl) cresol, bis (hydroxymethyl) dimethoxybenzene, bis (hydroxymethyl) diphenyl ether, bis (hydroxymethyl) benzophenone, hydroxymethylphenyl hydroxymethylbenzoate, bis (hydroxymethyl) biphenyl, dimethyl Bis (hydroxymethyl) biphenyl, bis (methoxymethyl) benzene, bis (methoxymethyl) cresol, bis (methoxymethyl) dimethoxybenzene, bis (methoxymethyl) diphenyl ether , Bis (methoxymethyl) benzophenone, methoxymethyl benzoate methoxymethyl, bis (methoxymethyl) biphenyl, dimethyl bis (methoxymethyl) biphenyl, and the like.

  Examples of the oxirane compound include phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol type epoxy resin, trisphenol type epoxy resin, tetraphenol type epoxy resin, phenol-xylylene type epoxy resin, naphthol-xylylene type epoxy. Resin, phenol-naphthol type epoxy resin, phenol-dicyclopentadiene type epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin, diethylene glycol diglycidyl ether, sorbitol polyglycidyl ether, propylene glycol diglycidyl ether, trimethylolpropane polyglycidyl Ether, 1,1,2,2-tetra (p-hydroxyphenyl) ethanetetraglycidyl ether, glycerol Liglycidyl ether, ortho-secondary butylphenyl glycidyl ether, 1,6-bis (2,3-epoxypropoxy) naphthalene, diglycerol polyglycidyl ether, polyethylene glycol glycidyl ether, YDB-340, YDB-412, YDF-2001, YDF -2004 (trade name, manufactured by Nippon Steel Chemical Co., Ltd.), NC-3000-H, EPPN-501H, EOCN-1020, NC-7000L, EPPN-201L, XD-1000, EOCN-4600 (trade name, Japan) Manufactured by Kayaku Co., Ltd.), Epicoat (registered trademark) 1001, Epicoat 1007, Epicoat 1009, Epicoat 5050, Epicoat 5051, Epicoat 1031S, Epicoat 180S65, Epicoat 157H70, YX-315 75 (trade name, manufactured by Japan Epoxy Resin Co., Ltd.), EHPE3150, Plaxel G402, PUE101, PUE105 (trade name, manufactured by Daicel Chemical Industries, Ltd.), Epicron (registered trademark) 830, 850, 1050, N-680, N-690, N-695, N-770, HP-7200, HP-820, EXA-4850-1000 (trade name, manufactured by DIC), Denacol (registered trademark) EX-201, EX-251, EX-203 , EX-313, EX-314, EX-321, EX-411, EX-511, EX-512, EX-612, EX-614, EX-614B, EX-711, EX-731, EX-810, EX -911, EM-150 (trade name, manufactured by Nagase ChemteX Corporation), Epolite (registered trademark) 70P, Epolite 1 0MF (trade name, manufactured by Kyoeisha Chemical Co., Ltd.), and the like.

  Examples of the isocyanate group-containing compound include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, 1,3-phenylenebismethylene diisocyanate, dicyclohexylmethane-4,4′-diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, Takenate (registered trademark) 500, 600, Cosmonate (registered trademark) NBDI, ND (trade name, manufactured by Mitsui Chemicals), Duranate (registered trademark) 17B-60PX, TPA-B80E, MF-B60X, MF-K60X, E402 -B80T (trade name, manufactured by Asahi Kasei Chemicals Corporation) and the like.

  Examples of the bismaleimide compound include 4,4′-diphenylmethane bismaleimide, phenylmethane maleimide, m-phenylene bismaleimide, bisphenol A diphenyl ether bismaleimide, 3,3′-dimethyl-5,5′-diethyl-4. , 4′-diphenylmethane bismaleimide, 4-methyl-1,3-phenylenebismaleimide, 1,6′-bismaleimide- (2,2,4-trimethyl) hexane, 4,4′-diphenyl ether bismaleimide, 4, 4′-diphenylsulfone bismaleimide, 1,3-bis (3-maleimidophenoxy) benzene, 1,3-bis (4-maleimidophenoxy) benzene, BMI-1000, BMI-1100, BMI-2000, BMI-2300, BMI-3000, BM -4000, BMI-5100, BMI-7000, BMI-TMH, BMI-6000, BMI-8000 (trade name, Daiwa Kasei Kogyo Co., Ltd.), and the like.

  As a compounding quantity of (D) crosslinking agent in the photosensitive resin composition, 0.1 mass part-40 mass parts are preferable with respect to 100 mass parts of (A) phenol resin, and 1 mass part-30 mass parts are. More preferred. If the blending amount is 0.1 parts by mass or more, the thermophysical properties and mechanical strength of the thermosetting film are good, while if it is 40 parts by mass or less, the stability of the photosensitive resin composition in the varnish state and It is preferable because the elongation of the thermosetting film is good.

  In the embodiment, (E) the thermal acid generator is blended in the photosensitive resin composition from the viewpoint of developing the thermal properties and mechanical properties of a good cured product even when the curing temperature is lowered. Is preferred.

  (E) The thermal acid generator may be a compound that generates an acid by heat. (E) Although it does not limit as a thermal acid generator, For example, allyl chloroacetate, n-butyl chloroacetate, t-butyl chloroacetate, ethyl chloroacetate, methyl chloroacetate, benzyl chloroacetate, chloroacetic acid Isopropyl, 2-methoxyethyl chloroacetate, methyl dichloroacetate, methyl trichloroacetate, ethyl trichloroacetate, 2-ethoxyethyl trichloroacetate, t-butyl cyanoacetate, t-butyl methacrylate, ethyl trifluoroacetate, methyl trifluoroacetate, Phenyl trifluoroacetate, vinyl trifluoroacetate, isopropyl trifluoroacetate, allyl trifluoroacetate, ethyl benzoate, methyl benzoate, t-butyl benzoate, methyl 2-chlorobenzoate, ethyl 2-chlorobenzoate, 4- Ethyl chlorobenzoate, 2,5- Ethyl chlorobenzoate, methyl 2,4-dichlorobenzoate, ethyl p-fluorobenzoate, methyl p-fluorobenzoate, t-butyl pentachlorophenylcarboxylate, methyl pentafluoropropionate, ethyl pentafluoropropionate, crotonic acid Carboxylic acid esters such as t-butyl; cyclic carboxylic acid esters such as phenolphthalein and thymolphthalein; ethyl methanesulfonate, methyl methanesulfonate, 2-methoxyethyl methanesulfonate, 2-isopropoxy methanesulfonate Ethyl, phenyl p-toluenesulfonate, ethyl p-toluenesulfonate, methyl p-toluenesulfonate, 2-phenylethyl p-toluenesulfonate, n-propyl p-toluenesulfonate, n-butyl p-toluenesulfonate P-toluenesulfonate t-butyl, p-toluenesulfonate n-hexyl, p-toluenesulfonate n-heptyl, p-toluenesulfonate n-octyl, p-toluenesulfonate 2-methoxyethyl, p-toluenesulfonate Propargyl toluenesulfonate, 3-butynyl p-toluenesulfonate, ethyl trifluoromethanesulfonate, n-butyl trifluoromethanesulfonate, ethyl perfluorobutanesulfonate, methyl perfluorobutanesulfonate, benzyl (4-hydroxyphenyl) methyl Sulfonium hexafluoroantimonate, benzyl (4-hydroxyphenyl) methylsulfonium hexafluorophosphate, trimethylsulfonium methylsulfate, tri-p-sulfonium trifluoromethanesulfonate, trimethyl Sulfonic acid esters such as sulfonium trifluoromethanesulfonate, pyridinium-p-toluenesulfonate, ethyl perfluorooctanesulfonate; 1,4-butane sultone, 2,4-butane sultone, 1,3-propane sultone, phenol red, bromo And cyclic sulfonic acid esters such as cresol green and bromocresol purple; and 2-sulfobenzoic anhydride, p-toluenesulfonic anhydride, phthalic anhydride and the like.

  As a compounding quantity of (E) thermal acid generator in the photosensitive resin composition, 0.1 mass part-30 mass parts are preferable with respect to 100 mass parts of (A) phenol resin, and 0.5 mass part-10 parts. A mass part is more preferable, and it is further more preferable that it is 1 mass part-5 mass parts.

  Although it does not limit as a silane coupling agent, For example, 3-mercaptopropyl trimethoxysilane (For example, Shin-Etsu Chemical Co., Ltd. product: brand name KBM803, Chisso Co., Ltd. product: brand name Silaace S810 etc.), 3-mercaptopropyltriethoxysilane (manufactured by Amax Co., Ltd .: trade name SIM6475.0), 3-mercaptopropylmethyldimethoxysilane (for example, Shin-Etsu Chemical Co., Ltd. trade name: LS1375, manufactured by Amax Corporation: trade name SIM6474. 0, etc.), mercaptomethyltrimethoxysilane (manufactured by AMAX Co .: trade name: SIM6473.5C), mercaptomethyltrimethoxysilane (manufactured by AMAX Co .: trade name: SIM6473.0), 3-mercaptopropi Diethoxymethoxysilane, 3-mercaptopropylethoxydimethoxysilane, 3-mercaptopropyltripropoxysilane, 3-mercaptopropyldiethoxypropoxysilane, 3-mercaptopropylethoxydipropoxysilane, 3-mercaptopropyldimethoxypropoxysilane, 3-mercapto Propylmethoxydipropoxysilane, 2-mercaptoethyltrimethoxysilane, 2-mercaptoethyldiethoxymethoxysilane, 2-mercaptoethylethoxydimethoxysilane, 2-mercaptoethyltripropoxysilane, 2-mercaptoethyltripropoxysilane, 2-mercapto Ethylethoxydipropoxysilane, 2-mercaptoethyldimethoxypropoxysilane, 2-mercaptoethylmethoxydipropo Examples include xylsilane, 4-mercaptobutyltrimethoxysilane, 4-mercaptobutyltriethoxysilane, and 4-mercaptobutyltripropoxysilane.

  Further, the silane coupling agent is not limited, but for example, N- (3-triethoxysilylpropyl) urea (manufactured by Shin-Etsu Chemical Co., Ltd .: trade name LS3610, manufactured by Amax Co., Ltd .: trade name SIU9055 .0), N- (3-trimethoxysilylpropyl) urea (manufactured by Amax Co., Ltd .: trade name SIU9058.0), N- (3-diethoxymethoxysilylpropyl) urea, N- (3-ethoxydimethoxysilylpropyl) ) Urea, N- (3-Tripropoxysilylpropyl) urea, N- (3-diethoxypropoxysilylpropyl) urea, N- (3-ethoxydipropoxysilylpropyl) urea, N- (3-dimethoxypropoxysilylpropyl) urea ) Urea, N- (3-methoxydipropoxysilylop Pyr) urea, N- (3-trimethoxysilylethyl) urea, N- (3-ethoxydimethoxysilylethyl) urea, N- (3-tripropoxysilylethyl) urea, N- (3-tripropoxysilylethyl) Urea, N- (3-ethoxydipropoxysilylethyl) urea, N- (3-dimethoxypropoxysilylethyl) urea, N- (3-methoxydipropoxysilylethyl) urea, N- (3-trimethoxysilylbutyl) Urea, N- (3-triethoxysilylbutyl) urea, N- (3-tripropoxysilylbutyl) urea, 3- (m-aminophenoxy) propyltrimethoxysilane (manufactured by Amax Co., Ltd .: trade name SLA0598.0) , M-aminophenyltrimethoxysilane (manufactured by Amax Co., Ltd .: commodity Name SLA0599.0), p-aminophenyltrimethoxysilane (manufactured by Amax Co .: product name SLA0599.1) aminophenyltrimethoxysilane (manufactured by Amax Co., Ltd .: product name SLA0599.2), 2- (trimethoxysilylethyl) ) Pyridine (manufactured by Amax Co., Ltd .: trade name SIT8396.0).

  Examples of the silane coupling agent include, but are not limited to, 2- (triethoxysilylethyl) pyridine, 2- (dimethoxysilylmethylethyl) pyridine, 2- (diethoxysilylmethylethyl) pyridine, (3-triethoxysilylpropyl) -t-butylcarbamate, (3-glycidoxypropyl) triethoxysilane, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-i-propoxysilane, tetra- n-butoxysilane, tetra-i-butoxysilane, tetra-t-butoxysilane, tetrakis (methoxyethoxysilane), tetrakis (methoxy-n-propoxysilane), tetrakis (ethoxyethoxysilane), tetrakis (methoxyethoxyethoxysilane) Bis (trimethoxysilyl) ethane, bis (trimethoxysilyl) hexane, bis (triethoxysilyl) methane, bis (triethoxysilyl) ethane, bis (triethoxysilyl) ethylene, bis (triethoxysilyl) octane, bis ( Triethoxysilyl) octadiene, bis [3- (triethoxysilyl) propyl] disulfide, bis [3- (triethoxysilyl) propyl] tetrasulfide, di-t-butoxydiacetoxysilane, di-i-butoxyaluminoxytri Ethoxysilane, bis (pentadionate) titanium-O, O'-bis (oxyethyl) -aminopropyltriethoxysilane, phenylsilanetriol, methylphenylsilanediol, ethylphenylsilanediol, n-propylphenylsilanedio , Isopropylphenylsilanediol, n-butylsiphenylsilanediol, isobutylphenylsilanediol, tert-butylphenylsilanediol, diphenylsilanediol, dimethoxydiphenylsilane, diethoxydiphenylsilane, dimethoxydi-p-tolylsilane, ethylmethylphenylsilanol N-propylmethylphenylsilanol, isopropylmethylphenylsilanol, n-butylmethylphenylsilanol, isobutylmethylphenylsilanol, tert-butylmethylphenylsilanol, ethyl n-propylphenylsilanol, ethylisopropylphenylsilanol, n-butylethylphenylsilanol , Isobutylethylphenylsilanol, tert-butylethylphenylsilano And methyl, diphenylsilanol, ethyldiphenylsilanol, n-propyldiphenylsilanol, isopropyldiphenylsilanol, n-butyldiphenylsilanol, isobutyldiphenylsilanol, tert-butyldiphenylsilanol, triphenylsilanol and the like.

  In embodiment, the silane coupling agent enumerated above can be used individually by 1 type or in combination of 2 or more types.

Among the silane coupling agents listed above, from the viewpoint of storage stability, phenylsilanetriol, trimethoxyphenylsilane, trimethoxy (p-tolyl) silane, diphenylsilanediol, dimethoxydiphenylsilane, diethoxydiphenylsilane, dimethoxydi -p-Tolylsilane, triphenylsilanol, and a silane coupling agent represented by the following structure are preferred.

  As a compounding quantity of the silane coupling agent in the photosensitive resin composition, 0.01 mass part-20 mass parts are preferable with respect to 100 mass parts of (A) phenol resin.

  Examples of the dye include methyl violet, crystal violet, and malachite green. As a compounding quantity of the dye in the photosensitive resin composition, 0.1 mass part-30 mass parts are preferable with respect to 100 mass parts of (A) phenol resin.

  Examples of the surfactant include not only nonionic surfactants such as polyglycols such as polypropylene glycol and polyoxyethylene lauryl ether or derivatives thereof, but also Florard (registered trademark, trade name, manufactured by Sumitomo 3M Co., Ltd.). ), Megafac (registered trademark, trade name, manufactured by Dainippon Ink & Chemicals, Inc.), Lumiflon (registered trademark, trade name, manufactured by Asahi Glass Co., Ltd.) and the like; And organosiloxane surfactants such as DBE (trade name, manufactured by Chisso Corporation) and Granol (trade name, manufactured by Kyoeisha Chemical Co., Ltd.).

  As a compounding quantity of surfactant in the photosensitive resin composition, 0.01 mass part-10 mass parts are preferable with respect to 100 mass parts of (A) phenol resin.

  Examples of the dissolution accelerator include a compound having a hydroxyl group or a carboxyl group. Examples of the compound having a hydroxyl group include the ballast agent used in the above-mentioned photosensitive diazonaphthoquinone compound, paracumylphenol, bisphenols, resorcinol, and linear phenol compounds such as MtrisPC and MtetraPC, TrisP-HAP. Non-linear phenolic compounds such as TrisP-PHBA, TrisP-PA (all manufactured by Honshu Chemical Industry Co., Ltd.), 2-5 phenolic hydroxyl group-substituted products of diphenylmethane, 1-5 of 3,3-diphenylpropane Obtained by reacting a phenolic hydroxyl group-substituted product, 2,2-bis- (3-amino-4-hydroxyphenyl) hexafluoropropane with 5-norbornene-2,3-dicarboxylic acid anhydride in a molar ratio of 1: 2. Compound, bis- (3-amino-4-hydroxyphenyl) sulfur , N-hydroxysuccinimide, N-hydroxyphthalimide, N-hydroxy5-norbornene-2,3, a compound obtained by reacting 1,2-cyclohexyldicarboxylic anhydride with a molar ratio of 1: 2. -Dicarboxylic imide etc. are mentioned.

  Examples of the compound having a carboxyl group include 3-phenyl lactic acid, 4-hydroxyphenyl lactic acid, 4-hydroxymandelic acid, 3,4-dihydroxymandelic acid, 4-hydroxy-3-methoxymandelic acid, 2-methoxy. Examples include 2- (1-naphthyl) propionic acid, mandelic acid, atrolactic acid, α-methoxyphenylacetic acid, O-acetylmandelic acid, and itaconic acid.

  As a compounding quantity of the melt | dissolution promoter in the photosensitive resin composition, 0.1 mass part-30 mass parts are preferable with respect to 100 mass parts of (A) phenol resin.

<Method for forming cured relief pattern>
In another embodiment, a method for producing a cured relief pattern using the photosensitive resin composition described above is provided. The method for producing a cured relief pattern includes the following steps:
Forming a photosensitive resin layer containing a photosensitive resin composition on a substrate;
Exposing the photosensitive resin layer;
The step of developing the exposed photosensitive resin layer to obtain a relief pattern, and the step of heat-treating the relief pattern are included.

An example of a method for producing a cured relief pattern will be described below.
First, the photosensitive resin composition described above is applied to a suitable support or substrate such as a silicon wafer, a ceramic substrate, an aluminum substrate, or the like. In the present specification, the term “substrate” includes a substrate on which a semiconductor element or a display element is formed in addition to an unprocessed substrate. When applying the photosensitive resin composition, an adhesion assistant such as a silane coupling agent may be applied in advance to the support or the substrate in order to ensure water-resistant adhesion between the pattern to be formed and the support. . Application of the photosensitive resin composition is performed by, for example, spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, or the like.

  Next, it prebakes at 80 to 140 degreeC, and dries the coating film of the photosensitive resin composition. The thickness of the coating after drying is preferably 1 μm to 500 μm.

  Next, the photosensitive resin layer is exposed. As the actinic radiation for exposure, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 nm to 500 nm are preferable. From the viewpoint of pattern resolution and handleability, the light source wavelength is preferably the g-line, h-line or i-line of a mercury lamp, even if these are used alone or two or more actinic rays are mixed. Good. As the exposure apparatus, a contact aligner, a mirror projection, and a stepper are particularly preferable. You may heat a coating film again at 80 to 140 degreeC after exposure as needed.

  Next, development is performed by a method such as an immersion method, a paddle method, or a rotary spray method. By developing, the exposed portion can be eluted and removed from the applied photosensitive resin composition to obtain a relief pattern.

  Examples of the developer include inorganic alkalis such as sodium hydroxide, sodium carbonate, sodium silicate, and aqueous ammonia; organic amines such as ethylamine, diethylamine, triethylamine, and triethanolamine; tetramethylammonium hydroxide, tetrabutylammonium An aqueous solution of a quaternary ammonium salt such as hydroxide, and an aqueous solution to which a water-soluble organic solvent such as methanol or ethanol or a surfactant is added in an appropriate amount can be used as necessary. Among these, an aqueous tetramethylammonium hydroxide solution is preferable, and the concentration of the tetramethylammonium hydroxide is preferably 0.5% by mass to 10% by mass, and more preferably 1% by mass to 5% by mass. %.

  After the development, the substrate on which the relief pattern is formed can be obtained by washing with a rinse solution to remove the developer. As a rinse liquid, distilled water, methanol, ethanol, isopropanol etc. can be used individually or in combination of 2 or more types, for example.

  Finally, a cured relief pattern can be obtained by heating the relief pattern thus obtained. The heating temperature is preferably 150 ° C. or higher and 300 ° C. or lower, and more preferably 250 ° C. or lower.

  In the method of forming a cured relief pattern using a polyimide or polybenzoxazole precursor composition generally used for permanent film applications of semiconductor devices, the dehydration cyclization reaction proceeds by heating to 300 ° C or higher. Therefore, it is necessary to convert to polyimide or polybenzoxazole, etc., but in the method for producing a cured relief pattern of the present invention, it can be cured even at lower temperature, so that it can be applied to a semiconductor device or display device that is weak against heat. It can be preferably used. For example, a method for manufacturing a cured relief pattern includes an insulating layer made of a high-dielectric material or a ferroelectric material having a process temperature restriction, such as an oxide of a refractory metal such as titanium, tantalum, or hafnium. It is suitably used for a semiconductor device. In addition, as long as the semiconductor device does not have such a heat resistance limitation, the heat treatment may be performed at 300 ° C. to 400 ° C. in the embodiment. Such heat treatment can be performed by using a hot plate, an oven, or a temperature rising oven capable of setting a temperature program. As the atmospheric gas when performing the heat treatment, air may be used, or an inert gas such as nitrogen or argon may be used. Further, when it is necessary to perform heat treatment at a lower temperature, heating may be performed under reduced pressure using a vacuum pump or the like.

  In the embodiment, the method for producing a cured relief pattern is good because the cured relief pattern is not crushed in a thick film (5 to 10 μm after curing) required as a protective film or insulating film used in a semiconductor device. A cured relief pattern (cured product) having a shape can be provided. The evaluation method was described in the column of the following cured relief pattern shape evaluation.

<Semiconductor device>
In another embodiment, a semiconductor device having a cured relief pattern manufactured by the method described above using the photosensitive resin composition described above is also provided. In this embodiment, the semiconductor device includes a semiconductor element and a cured film provided on the semiconductor element, and the cured film is the cured relief pattern described above. Further, the cured relief pattern may be laminated in direct contact with the semiconductor element, or may be laminated with another layer interposed therebetween. Examples of the cured film include a surface protective film, an interlayer insulating film, a rewiring insulating film, a flip-chip device protective film, and a semiconductor device protective film having a bump structure. In the embodiment, the semiconductor device can be manufactured by combining a known semiconductor device manufacturing method and the above-described cured relief pattern manufacturing method.

<Display body device>
In another embodiment, a display device having a cured relief pattern manufactured by the method described above using the photosensitive resin composition described above is also provided. In this embodiment, the display device includes a display element and a cured film provided on the display element, and the cured film is the cured relief pattern described above. Further, the cured relief pattern may be laminated in direct contact with the display element, or may be laminated with another layer interposed therebetween. For example, examples of the cured film include a surface protective film for TFT liquid crystal display elements or color filter elements, an insulating film, and a planarizing film, protrusions for MVA liquid crystal display devices, and barrier ribs for organic EL element cathodes. . In the embodiment, similarly to the semiconductor device described above, the display body device can be manufactured by combining a known display body device manufacturing method and the above-described cured relief pattern manufacturing method.

Hereinafter, although an embodiment is concretely explained by a synthesis example, an example, and a comparative example, the present invention is not limited to this. The following Examples 27 to 29 are merely reference examples.
Measurement conditions during actual施例are shown below.

<Weight average molecular weight>
About the phenol resin obtained by each synthesis example, molecular weight was measured on condition of the following using gel permeation chromatography (GPC), and the weight average molecular weight in standard polystyrene conversion was calculated | required.
Pump: JASCO PU-980
Detector: JASCO RI-930
Column oven: JASCO CO-965 40 ° C
Column: Shodex KD-806M Two in series Mobile phase: 0.1 mol / l EtBr / NMP
Flow rate: 1 ml / min.

<Evaluation of shape of cured relief pattern>
The photosensitive resin composition was spin-coated on a silicon wafer, and the silicon wafer and the spin-coated film were pre-baked on a hot plate at 120 ° C. for 180 seconds to form a coating film having a thickness of 10 μm. This coating film was exposed by irradiating it with i-line having an exposure amount of 500 mJ / cm ² using a stepper NSR2005i8A (Nikon Corporation) having an exposure wavelength of i-line (365 nm) through a reticle with a test pattern. After the exposure, only Example 13 described later was reheated on a hot plate at 120 ° C. for 180 seconds. Next, after developing with a developing machine (D-SPIN) at 23 ° C. using a 2.38% tetramethylammonium hydroxide aqueous solution AZ-300MIF (manufactured by AZ Electronic Materials), rinsing with pure water, In a vertical curing furnace VF200B (manufactured by Koyo Thermo System Co., Ltd.), curing was performed at 220 ° C. for 1 hour in a nitrogen atmosphere to obtain a cured relief pattern. The cured pattern was observed with an optical microscope and evaluated according to the following criteria. The results are shown in Table 2.
○: The 10 μm square relief pattern is maintained without being filled.
Δ: Although the 10 μm square relief pattern is buried, the 20 μm square relief pattern is not buried, and the shape is maintained.
X: A relief pattern of 20 μm square is buried.

[Synthesis Example 1]
<Synthesis of Resin A-1>
100.9 g (0.8 mol) of phloroglucinol, 4,4′-bis (methoxymethyl) biphenyl (hereinafter also referred to as “BMMB”) in a separable flask with a Dean-Stark device of 0.5 liter capacity. 121.2 g (0.5 mol), diethyl sulfate 3.9 g (0.025 mol), and diethylene glycol dimethyl ether 140 g were mixed and stirred at 70 ° C. to dissolve the solid matter.

  The mixed solution was heated to 140 ° C. with an oil bath, and generation of methanol was confirmed from the reaction solution. The reaction solution was stirred for 2 hours while maintaining 140 ° C.

  Next, the reaction vessel was cooled in the atmosphere, and 100 g of tetrahydrofuran was separately added thereto and stirred. The reaction diluted solution is dropped into 4 L of water under high-speed stirring to disperse and precipitate the resin, which is recovered, washed with water as required, dehydrated and vacuum-dried, and a copolymer of phloroglucinol / BMMB (A-1) was obtained with a yield of 70%.

[Synthesis Example 2]
<Synthesis of Resin A-2>
Synthesis was performed in the same manner as in Synthesis Example 1 using 128.3 g (0.76 mol) of methyl 3,5-dihydroxybenzoate instead of phloroglucinol of Synthesis Example 1, and methyl 3,5-dihydroxybenzoate / A copolymer (A-2) comprising BMMB was obtained with a yield of 65%.

[Synthesis Example 3]
<Synthesis of Resin A-3>
A separable flask with a Dean-Stark apparatus having a capacity of 1.0 L was purged with nitrogen, and then in the separable flask, 81.3 g (0.738 mol) of resorcinol, 84.8 g (0.35 mol) of BMMB, p-toluenesulfone 3.81 g (0.02 mol) of acid and 116 g of propylene glycol monomethyl ether (hereinafter also referred to as PGME) were mixed and stirred at 50 ° C. to dissolve the solid matter.

  The dissolved mixed solution was heated to 120 ° C. with an oil bath, and generation of methanol was confirmed from the reaction solution. The reaction solution was stirred for 3 hours while maintaining 120 ° C.

  Next, 2,6-bis (hydroxymethyl) -p-cresol 24.9 (0.150 mol) g and PGME 249 g were mixed and stirred in a separate container, and the uniformly dissolved solution was added to the solution using a dropping funnel. The mixture was added dropwise to the separable flask in 1 hour, and stirred for another 2 hours after the addition.

  After completion of the reaction, the same treatment as in Synthesis Example 1 was performed to obtain a copolymer (A-3) composed of resorcinol / BMMB / 2,6-bis (hydroxymethyl) -p-cresol in a yield of 77%.

[Synthesis Example 4]
<Synthesis of Photosensitive Diazonaphthoquinone B-1>
3,3′-bis (2-hydroxy-5-methylbenzyl) -4,4′- represented by the following formula (35) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer Using 30 g of dihydroxy-2,2 ′, 5,5′-tetramethyldiphenylmethane (trade name BIPC-BI25X-F manufactured by Asahi Organic Materials Co., Ltd.), an amount corresponding to 50 mol% of this OH group is 1,2- After stirring and dissolving naphthoquinone diazide-4-sulfonic acid chloride in 300 g of acetone, the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 12 g of triethylamine was dissolved in 12 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 22 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. This precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-1).

[Synthesis Example 5]
<Synthesis of Photosensitive Diazonaphthoquinone B-2>
30 g (0.0565 mol) of a compound represented by the following formula (28) as a hydroxy compound (trade name BIPC-BI25X-TPA) manufactured as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer ), 48.6 g (0.181 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride corresponding to 80 mol% of this OH group was stirred and dissolved in 300 g of acetone, and then the flask was kept in a thermostatic bath. To 30 ° C. Next, 18.3 g of triethylamine was dissolved in 18 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 22 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-2).

[Synthesis Example 6]
<Synthesis of photosensitive diazonaphthoquinone B-3>
In a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer, 30 g (0.0474 mol) of a compound represented by the following formula (29) (trade name Tekoc-4HBPA manufactured by Honshu Chemical Industry Co., Ltd.) is used as a hydroxy compound. Then, 40.76 g (0.152 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride in an amount corresponding to 80 mol% of this OH group was stirred and dissolved in 300 g of acetone, and then the flask was heated in a thermostatic bath. Adjusted to ° C. Next, 15.4 g of triethylamine was dissolved in 15 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 22 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. This precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-3).

[Synthesis Example 7]
<Synthesis of photosensitive diazonaphthoquinone B-4>
3,3 ′, 5,5′-tetrakis (2-hydroxy-5-methylbenzyl)-represented by the following formula (30) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer 30 g (0.0423 mol) of 4,4′-dihydroxy-diphenylpropane (trade name TEPC-BIP-A manufactured by Asahi Organic Materials Industries Co., Ltd.) was used, and an amount corresponding to 80 mol% of this OH group was 1,2- After 36.39 g (0.135 mol) of naphthoquinonediazide-4-sulfonic acid chloride was stirred and dissolved in 300 g of acetone, the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 13.7 g of triethylamine was dissolved in 14 g of acetone and charged in a dropping funnel, which was then dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 22 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-4).

[Synthesis Example 8]
<Synthesis of photosensitive diazonaphthoquinone B-5>
A 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer was charged with 30 g (0.0482 mol) of a compound represented by the following formula (31) as a hydroxy compound (trade name BIPC-PDAB, manufactured by Asahi Organic Materials Co., Ltd.). 1,64-75 g (0.241 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride in an amount corresponding to 62.5 mol% of this OH group was stirred and dissolved in 300 g of acetone, and then the flask was kept in a thermostatic bath. To 30 ° C. Next, 24.4 g of triethylamine was dissolved in 24 g of acetone, charged in a dropping funnel, and then dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. This precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-5).

[Synthesis Example 9]
<Synthesis of Photosensitive Diazonaphthoquinone B-6>
102.4 g (0.92 mol) of resorcinol and 92.0 g (0.92 mol) of hexanal were dissolved in 920 ml of ethanol, cooled to 0 ° C., and 148 ml of 12N hydrochloric acid was added dropwise and stirred. The mixture was then stirred at 70 ° C. for 10 hours under a nitrogen atmosphere. After cooling to room temperature, the precipitate was removed by filtration. The filtrate was washed with water at 80 ° C. and dried, and the obtained solid was recrystallized with a mixed solvent of methanol, hexane and acetone. Thereafter, vacuum drying was performed to obtain a resorcin cyclic tetramer represented by the following formula (36) in a yield of 50%.

  Next, to 76.9 g (0.1 mol) of resorcin cyclic tetramer, 134.3 g (0.5 mol, naphthoquinone diazide sulfonic acid esterification rate equivalent to 62.5%) of 1,2-naphthoquinone diazide-4- Sulfonic acid chloride and 1057 g of tetrahydrofuran were added and dissolved by stirring at 20 ° C. A dilution obtained by diluting 53.14 g (0.525 mol) of triethylamine with 266 g of tetrahydrofuran was added dropwise to the mixture at a constant rate over 30 minutes. During this reaction, the temperature of the reaction solution was controlled in the range of 20 to 30 ° C. using an ice water bath. After completion of the dropwise addition, the mixture was left to stir at 20 ° C. for another 30 minutes, and then 6.83 g of a 36 mass% hydrochloric acid aqueous solution was added at a time. Separated. The obtained filtrate was added dropwise to 10 liters of a 0.5% by weight aqueous hydrochloric acid solution over 1 hour with stirring to precipitate the desired product, which was collected by suction filtration. The obtained cake-like recovered material was again dispersed in 5 liters of ion-exchanged water, stirred, washed, collected by filtration, and this water washing operation was repeated three times. Finally, the obtained cake-like material was vacuum-dried at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-6).

[Synthesis Example 10]
<Synthesis of photosensitive diazonaphthoquinone B-7>
To 1 L separable flask, 2,2-bis (3-amino-4-hydroxyphenyl) -hexafluoropropane 109.9 g (0.3 mol), tetrahydrofuran (THF) 330 g, pyridine 47.5 g (0.6 mol) were added. Further, 98.5 g (0.6 mol) of 5-norbornene-2,3-dicarboxylic acid anhydride was added as a powder at room temperature. After the mixture was stirred at room temperature for 3 days, the reaction was confirmed by high performance liquid chromatography (HPLC). As a result, no starting material was detected and the product was detected as a single peak with a purity of 99%. It was. This reaction solution was added dropwise to 1 L of ion-exchanged water with stirring to precipitate the product.

Next, after the precipitate was separated by filtration, 500 mL of THF was added and dissolved by stirring to obtain a uniform solution. Residual pyridine was removed by passing the homogeneous solution through a glass column packed with 100 g of cation exchange resin (Amberlyst 15 manufactured by Organo Corporation). Next, this product is dropped into 3 L of ion-exchanged water under high-speed stirring to precipitate a product, which is filtered off and then vacuum-dried to have a structure represented by the following formula (33). An imidophenol compound (NI) was obtained with a yield of 86%.

The product is imidized, in IR chart, appeared characteristic absorption of an imide group 1394Cm ^-1 and 1774 cm ^-1, on the one hand, there is no characteristic absorption of amide groups in the vicinity of 1540 cm ^-1 and 1650 cm ^-1 This was confirmed by the absence of proton peaks of amide and carboxylic acid in the NMR chart. Next, 53.7 g (0.2 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride and 560 g of acetone were added to 65.9 g (0.1 mol) of the imide phenol compound (NI), and 20 ° C. And dissolved with stirring. A dilution obtained by diluting 21.2 g (0.21 mol) of triethylamine with 106.2 g of acetone was dropped into the mixture at a constant rate over 30 minutes. During this reaction, the temperature of the reaction solution was controlled in the range of 20 to 30 ° C. using an ice water bath or the like.

  After completion of the dropwise addition, the reaction product was allowed to stand at 20 ° C. for 30 minutes with stirring, and then 5.6 g of a 36 mass% hydrochloric acid aqueous solution was added at a time, and the reaction solution was cooled in an ice-water bath and precipitated. The solid was filtered off with suction. The obtained filtrate was added dropwise to 5 L of 0.5 mass% hydrochloric acid aqueous solution with stirring for 1 hour to precipitate the target product, which was collected by suction filtration. The obtained cake-like recovered material was dispersed again in 5 L of ion-exchanged water, stirred, washed, collected by filtration, and this water washing operation was repeated three times. Finally, the obtained cake-like material was vacuum-dried at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-7).

[Synthesis Example 11]
<Synthesis of Photosensitive Diazonaphthoquinone B-8a>
4,4 ′-(1- (2- (4-hydroxyphenyl) -2-propyl) represented by the following formula (21) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer Phenyl) ethylidene) bisphenol (trade name Tris-PA manufactured by Honshu Chemical Industry Co., Ltd.) 30 g (0.0707 mol) was used, and an amount corresponding to 83.3 mol% of this OH group was 1,2-naphthoquinonediazide-4- After 47.49 g (0.177 mol) of sulfonic acid chloride was dissolved in 300 g of acetone with stirring, the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 17.9 g of triethylamine was dissolved in 18 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. This precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-8a).

[Synthesis Example 12]
<Synthesis of Photosensitive Diazonaphthoquinone B-8b>
4,4 ′-(1- (2- (4-hydroxyphenyl) -2-propyl) represented by the above formula (21) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer Phenyl) ethylidene) bisphenol (trade name Tris-PA manufactured by Honshu Chemical Industry Co., Ltd.) 30 g (0.0707 mol) was used, and an amount corresponding to 83.3 mol% of this OH group was 1,2-naphthoquinonediazide-5- After 47.49 g (0.177 mol) of sulfonic acid chloride was dissolved in 300 g of acetone with stirring, the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 17.9 g of triethylamine was dissolved in 18 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-8b).

[Synthesis Example 13]
<Synthesis of Photosensitive Diazonaphthoquinone B-9>
In a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer, 30 g (0.0269 mol) of a compound represented by the following formula (22) as a hydroxy compound (trade name: TPPA1100-2C manufactured by Honshu Chemical Industry Co., Ltd.) was used. Then, 51.98 g (0.193 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride in an amount corresponding to 80 mol% of this OH group was stirred and dissolved in 300 g of acetone, and then the flask was heated in a thermostatic bath. Adjusted to ° C. Next, 19.5 g of triethylamine was dissolved in 20 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-9).

[Synthesis Example 14]
<Synthesis of Photosensitive Diazonaphthoquinone B-10>
4,6-bis ((4-hydroxyphenyl) ethyl) benzene-1,3-diol represented by the following formula (24) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer ( Using 30 g (0.0857 mol) of trade name BisHPMC-RS manufactured by Honshu Chemical Industry Co., Ltd., 73.7 g (0) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride in an amount corresponding to 80 mol% of this OH group. 274 mol) was stirred and dissolved in 300 g of acetone, and the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 27.7 g of triethylamine was dissolved in 28 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-10).

[Synthesis Example 15]
<Synthesis of Photosensitive Diazonaphthoquinone B-11>
4,4 ′, 4 ″ -methylidynetrisphenol represented by the following formula (25) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer (trade name TrisP manufactured by Honshu Chemical Industry Co., Ltd.) -PHBA) 30 g (0.103 mol), 66.25 g (0.247 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride corresponding to 80 mol% of the OH group was added to 300 g of acetone. After stirring and dissolving, the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 25.0 g of triethylamine was dissolved in 25 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. This precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-11).

[Synthesis Example 16]
<Synthesis of Photosensitive Diazonaphthoquinone B-12>
30 g (0.032 mol) of the compound represented by the following formula (27) was used as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer, and an amount corresponding to 80 mol% of this OH group. After stirring and dissolving 62.47 g (0.233 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride in 300 g of acetone, the flask was adjusted to 30 ° C. in a thermostatic bath. Next, 23.6 g of triethylamine was dissolved in 24 g of acetone, charged in a dropping funnel, and then dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-12).

[Synthesis Example 17]
<Synthesis of Photosensitive Diazonaphthoquinone B-13>
30 g (0.141 mol) of p-cumylphenol (manufactured by Mitsui Chemicals Fine) having a structure represented by the following formula (20) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer ), 37.9 g (0.141 mol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride corresponding to 100 mol% of this OH group was stirred and dissolved in 300 g of acetone, and then the flask was kept in a thermostatic bath. To 30 ° C. Next, 17.9 g of triethylamine was dissolved in 18 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. The precipitate was washed with water and filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-13).

[Synthesis Example 18]
<Synthesis of Photosensitive Diazonaphthoquinone B-14>
A compound represented by the following formula (19) as a polyhydroxy compound (product name: BIMC-BZ) (product name: BIMC-BZ) as a polyhydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer (the above formula (3 ) 15.0 g (50 mmol) was used, and 24.2 g (90 mmol) of 1,2-naphthoquinonediazide-4-sulfonic acid chloride corresponding to 90 mol% of this OH group was added to 197.4 g of acetone. After stirring and dissolving, the flask was adjusted to 30 ° C. in a thermostatic bath. A solution obtained by diluting 9.56 g (94.5 mmol) of triethylamine with 47.8 g of acetone was added dropwise thereto at a constant rate over 30 minutes. At this time, the temperature of the reaction solution was controlled in the range of 20 to 30 ° C. using an ice water bath. After completion of the dropwise addition, the mixture was left to stir at 20 ° C. for another 30 minutes, and then 3.6 g (24.9 mmol) of a 36 mass% hydrochloric acid aqueous solution was added at a time, and then the reaction solution was cooled in an ice water bath and precipitated. The solid was filtered off with suction. The filtrate obtained at this time was dropped into 5 L of a 0.5% by weight hydrochloric acid aqueous solution over 1 hour with stirring to precipitate the desired product, which was collected by suction filtration. The obtained cake-like recovered material was dispersed again in 3 l of ion-exchanged water, stirred, washed, collected by filtration, and this water washing operation was repeated three times. Finally, the cake-like material obtained was vacuum-dried at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-14).

[Synthesis Example 19]
<Synthesis of Photosensitive Diazonaphthoquinone B-15>
Using 30 g (0.13 mol) of 2,3,4-trihydroxybenzophenone represented by the following formula (37) as a hydroxy compound in a 1 L separable flask equipped with a stirrer, a dropping funnel and a thermometer, this OH group After stirring and dissolving 69.9 g (0.26 mol) of 1,2-naphthoquinonediazide-5-sulfonic acid chloride in 300 g of acetone, the amount corresponding to 67 mol% of the flask was adjusted to 30 ° C. in a thermostatic bath. . Next, 26.3 g of triethylamine was dissolved in 26 g of acetone, charged in a dropping funnel, and dropped into the flask over 30 minutes. After completion of the dropwise addition, stirring was continued for another 30 minutes, and then hydrochloric acid was added dropwise and stirring was further performed for 30 minutes to complete the reaction. The reaction was then filtered to remove triethylamine hydrochloride. In a 3 L beaker, 1640 g of pure water and 30 g of hydrochloric acid were mixed and stirred, and the filtrate was added dropwise to the mixture while stirring to obtain a precipitate. This precipitate was washed with water, filtered, and then dried under reduced pressure at 40 ° C. for 48 hours to obtain photosensitive diazonaphthoquinone (B-15).

[Example 1]
As shown in Table 1, 100 parts by mass of the phenol resin (A-1), 12 parts by mass of the photosensitive diazonaphthoquinone (B-1), and 5 parts by mass of the crosslinking agent (D-1) were 217 parts by mass of the solvent (C-1). The positive photosensitive resin composition was prepared by dissolving in a part, dissolving, and filtering through a 0.1 μm filter. The properties of this composition were measured according to the evaluation method. The obtained results are shown in Table 2.

[Examples 2 to 29]
A composition comprising the components shown in Table 1 was prepared in the same manner as in Example 1, and the properties of the composition and its cured film were measured in the same manner as in Example 1. The obtained results are shown in Table 2.

[Comparative Examples 1-3]
A composition comprising the components shown in Table 1 was prepared in the same manner as in Example 1, and the properties of the composition and its cured film were measured in the same manner as in Example 1. The obtained results are shown in Table 2.

[Comparative Example 4]
A composition similar to Example 1 of Patent Document 3 above was prepared by the same means as in Example 1 of this specification, and the properties of the composition and its cured film were measured in the same manner as Example 1 of this specification. did. The obtained results are shown in Table 2.

The composition described in Table 1 is as follows.
<(A) Phenolic resin>
A-1: Copolymer composed of phloroglucinol / BMMB, polystyrene equivalent weight average molecular weight (Mw) = 15,000
A-2: Copolymer consisting of methyl 3,5-dihydroxybenzoate / BMMB, polystyrene equivalent weight average molecular weight (Mw) = 21,000
A-3: copolymer consisting of resorcinol / BMMB / 2,6-bis (hydroxymethyl) -p-cresol, polystyrene-reduced weight average molecular weight (Mw) = 9,900
A-4: Novolak resin, polystyrene-reduced weight average molecular weight (Mw) = 10,600 (Asahi Organic Materials Co., Ltd. product name EP4080G)
<(B) Photosensitive diazonaphthoquinone>
B-1: Photosensitive diazonaphthoquinone described in Synthesis Example 4 B-2: Photosensitive diazonaphthoquinone described in Synthesis Example 5 B-3: Photosensitive diazonaphthoquinone described in Synthesis Example 6 B-4: In Synthesis Example 7 Described photosensitive diazonaphthoquinone B-5: photosensitive diazonaphthoquinone described in Synthesis Example 8 B-6: photosensitive diazonaphthoquinone described in Synthesis Example 9 B-7: photosensitive diazonaphthoquinone described in Synthesis Example 10 B- 8a: photosensitive diazonaphthoquinone described in Synthesis Example 11 B-8b: photosensitive diazonaphthoquinone described in Synthesis Example 12 B-9: photosensitive diazonaphthoquinone described in Synthesis Example 13 B-10: described in Synthesis Example 14 Photosensitive diazonaphthoquinone B-11: Photosensitive diazonaphthoquinone described in Synthesis Example 15 B-12: Photosensitive diazonaphthoquinone described in Synthesis Example 16 Zonafutokinon B-13: diazo photosensitive described in Synthesis Example 17 naphthoquinone-B-14: Synthesis photosensitive diazonaphthoquinone described in Example 18 diazonaphthoquinone B-15: photosensitive diazonaphthoquinone described in Synthesis Example 19 <(C) Solvent>
C-1: γ-butyrolactone (GBL)
<(D) Crosslinking agent>
D-1: 1,3,4,6-tetrakis (methoxymethyl) glycoluril (manufactured by Sanwa Chemical Co., Ltd., trade name: Nicalak MX-270)
<(E) Thermal acid generator>
E-1: Oxime ester compound (BASF Japan, trade name; Irgacure PAG121)

  From Table 2, in the photosensitive resin composition prepared in the examples, the relief pattern after curing collapses in the thick film (5 to 10 μm after curing) necessary as a protective film or insulating film used in the semiconductor device. It can be seen that a cured film can be formed without embedding the pattern and providing a cured relief pattern having a good shape. Therefore, the present invention can provide an interlayer insulating film or a surface protective film for a semiconductor element that is excellent in these characteristics.

  The photosensitive resin composition of the present invention includes a surface protective film for a semiconductor device, a display device and a light emitting device, an interlayer insulating film, an insulating film for rewiring, a protective film for a flip chip device, a protective film for a device having a bump structure, It can be suitably used as an interlayer insulating film of a multilayer circuit, a cover coat of a flexible copper-clad plate, a solder resist film, a liquid crystal alignment film, and the like.

Claims (9)

A photosensitive resin composition comprising (A) a phenol resin, (B) a photosensitive diazonaphthoquinone compound , (C) a solvent , and (D) a crosslinking agent , wherein the (A) phenol resin is represented by the following general formula (1) ):

{In Formula (1), a is an integer of 2 or 3, b is an integer of 0-2, 2 <= (a + b) <= 4, and R < ₁ > is C1-C20 1 Represents a monovalent substituent selected from the group consisting of a valent organic group, a halogen atom, a nitro group and a cyano group, and when b is 2, two R _{1 s} are the same or different from each other And X is a divalent chain aliphatic group having 2 to 10 carbon atoms which may have an unsaturated bond, a divalent alicyclic group having 3 to 20 carbon atoms, the following general formula (2):

(In formula (2), p is an integer of 1 to 10.) At least one selected from the group consisting of a divalent alkylene oxide group represented by formula (2) and a divalent organic group having an aromatic group. Represents a divalent organic group. }
And (B) the photosensitive diazonaphthoquinone compound has the following general formulas (3) to (7):

{In Formula (3), X ₁ and X ₂ each independently represent a hydrogen atom or a monovalent organic group having 1 to 60 carbon atoms, and X ₃ and X ₄ each independently represent a hydrogen atom or carbon. Represents a monovalent organic group of 1 to 60, and r1, r2, r3 and r4 are each independently an integer of 0 to 5, and at least one of r3 and r4 is an integer of 1 to 5 R1 + r3 = 5 and r2 + r4 = 5. }

{In Formula (4), Z represents a tetravalent organic group having 1 to 20 carbon _{atoms, X 5, X 6, X} 7 and _{X 8} are each independently a monovalent C1-30 Represents an organic group, r6 is an integer of 0 or 1, r5, r7, r8 and r9 are each independently an integer of 0 to 3, and r10, r11, r12 and r13 are each independently And is an integer of 0 to 2, and at least one of r10, r11, r12 and r13 is 1 or 2. }

{In Formula (5), r14 represents an integer of 1 to 5, r15 is an integer of 3 to 8, and (r14 × r15) L's are each independently 1 having 1 to 20 carbon atoms. (R15) Ts each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and (r15) Ss each independently represent a hydrogen atom. An atom or a monovalent organic group having 1 to 20 carbon atoms is represented. }

{In Formula (6), A represents a divalent organic group containing an aliphatic tertiary or quaternary carbon, and M represents a divalent organic group. }

{In Formula (7), r17, r18, r19 and r20 are each independently an integer of 0 to 2, and at least one of r17, r18, r19 and r20 is 1 or 2, and X ₁₀ to X ₁₉ each independently represents at least one monovalent group selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an allyl group and an acyl group, and Y _{1 to} Y ₃ are each independently a single bond, —O—, —S—, —SO—, —SO ₂ —, —CO—, —CO ₂ —, cyclopentylidene, cyclohexylidene, phenylene, and 1 to 3 carbon atoms. It represents at least one divalent group selected from the group consisting of 20 divalent organic groups. }
The photosensitive resin composition, which is 1,2-naphthoquinonediazide-4-sulfonic acid ester and / or 1,2-naphthoquinonediazide-5-sulfonic acid ester of at least one hydroxy compound selected from the group consisting of: The hydroxy compound represented by the general formula (3) is represented by the following general formula (8):

{In the formula (8), it is r16, each independently, an integer from 0-2, and _{X 9} each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. }
The photosensitive resin composition of Claim 1 which is a compound represented by these. In the general formula (4), Z represents the following formula:

The photosensitive resin composition according to claim 1, which is at least one tetravalent group selected from the group consisting of: In the general formula (1), X represents the following general formula (9):

{In Formula (9), R ₂ , R ₃ , R ₄ and R ₅ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a part or all of the hydrogen atoms are fluorine. A monovalent aliphatic group having 1 to 10 carbon atoms substituted with an atom, n ₁ is an integer of 0 to 4, and R ₆ is selected from a halogen atom, a hydroxyl group or a monovalent organic group; , N ₁ is an integer of 1, R ₆ is a hydroxyl group or a monovalent organic group having a hydroxyl group, and when n ₁ is an integer of 2 to 4, at least R ₆ One is a hydroxyl group or a monovalent organic group having a hydroxyl group, and the plurality of R ₆ may be the same or different from each other. } And / or the following general formula (10):

{In Formula (10), R ₇ , R ₈ , R ₉ and R ₁₀ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 10 carbon atoms, or a part or all of the hydrogen atoms are fluorine. Represents a monovalent aliphatic group having 1 to 10 carbon atoms substituted with an atom, and Y represents a single bond, a chain aliphatic group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, fluorine C3-C20 alicyclic group which may be substituted by atom, the following general formula (2):

(In formula (2), p is an integer of 1 to 10.) and the following formula (11):

Represents at least one divalent organic group selected from the group consisting of divalent groups represented by: } The photosensitive resin composition of any one of Claims 1-3 which is a bivalent group represented by these. In the general formula (1), X represents the following general formula (12):

The photosensitive resin composition of any one of Claims 1-4 which is a bivalent organic group represented by these. In the general formula (1), X represents the following general formula (13):

The photosensitive resin composition of any one of Claims 1-5 which is a bivalent organic group represented by these. The (A) phenolic resin has the following general formula (14):

{In Formula (14), R ₁₁ is a monovalent group having 1 to 10 carbon atoms selected from a hydrocarbon group or an alkoxy group, n ₂ is an integer of 2 or 3, and n ₃ is 0 When m ₁ is an integer from ₁ to 500, 2 ≦ (n ₂ + n ₃ ) ≦ 4, and n ₃ is 2, the two R ₁₁ are They may be the same or different. } And the following general formula (15):

{Wherein _{(15), R 12} and _{R 13} is a monovalent group having 1 to 10 carbon atoms selected from hydrocarbon groups or alkoxy groups, _{n 4} is an integer of 2 or 3, _{n 5} Is an integer from 0 to 2, n ₆ is an integer from 0 to 3, m ₂ is an integer from 1 to 500, 2 ≦ (n ₄ + n ₅ ) ≦ 4, and n ₅ is When R 2, the two R ₁₂ may be the same or different from each other, and when n ₆ is 2 to 3, the plurality of R ₁₃ are each the same, Or it may be different. } The photosensitive resin composition of any one of Claims 1-6 which is a phenol resin which has both the structures represented by} in the same resin frame | skeleton. (E) a thermal acid further comprising a generator, a photosensitive resin composition claimed in any one of claims 1-7. The following steps:
(1) The process of forming the photosensitive resin layer containing the photosensitive resin composition of any one of Claims 1-8 on a board | substrate,
(2) a step of exposing the photosensitive resin layer;
(3) developing the photosensitive resin layer to obtain a relief pattern;
(4) a step of heat-treating the relief pattern;
A method for producing a cured relief pattern.