JP5968462B2 - Oxide sintered body, oxide sputtering target, high refractive index conductive oxide thin film, and method for producing oxide sintered body - Google Patents

Description

  The present invention relates to an oxide sintered body, an oxide sputtering target, a conductive oxide thin film having a high refractive index, and a method for producing the oxide sintered body, and more particularly, a sintered body sputtering target having a low bulk resistance and capable of DC sputtering. And a high refractive index film produced using the same.

  When using visible light in various optical devices such as displays and touch panels, the material used needs to be transparent, and in particular, it is desired to have a high transmittance in the entire visible light region. In addition, optical loss may occur in various optical devices due to the difference in refractive index at the interface between the film material and the substrate, and as a method to improve these optical losses, it is necessary to adjust the refractive index and optical film thickness. There is a method of introducing an optical adjustment film. Since the refractive index required for the optical adjustment film varies depending on the structure of various devices, a wide range of refractive index is required. Moreover, depending on the place used, electrical conductivity may be required.

In general, ITO (indium oxide-tin oxide), IZO (indium oxide-zinc oxide), GZO (gallium oxide-zinc oxide), AZO (aluminum oxide-zinc oxide) and the like are known as transparent and conductive materials. (Patent Documents 1 to 3). However, these materials have a refractive index within a range of about 1.95 to 2.05 at a wavelength of 550 nm, and a high refractive index material (n> 2.05) or a low refractive index material for optical adjustment ( n <1.95) cannot be used. In addition, in order to increase the transmittance, ITO needs to be heated at the time of film formation or annealed after the film formation. is there. In addition, since IZO has absorption on the short wavelength side, there is a problem that it becomes a yellowish film.

JP 2007-008780 A JP 2009-184876 A JP 2007-238375 A

  An object of the present invention is to provide a sintered body capable of obtaining a conductive thin film capable of realizing a high visible light transmittance and a high refractive index. Since this thin film has a high transmittance and a high refractive index, it is useful as a thin film for optical devices such as displays and touch panels, particularly as a thin film for optical adjustment. Another object of the present invention is to provide a sputtering target having a high relative density, a low bulk resistance, and capable of DC sputtering. An object of the present invention is to improve the characteristics of optical devices, reduce equipment costs, and greatly improve the characteristics of film formation.

  In order to solve the above problems, the present inventors have conducted intensive research, and as a result, by adopting the material system presented below, it becomes possible to obtain a conductive thin film having a high transmittance and a high refractive index. The knowledge that good optical characteristics can be secured, and further, stable film formation by DC sputtering is possible, and characteristics of optical devices using the thin film can be improved and productivity can be improved. Obtained.

Based on this finding, the present invention provides the following inventions.
1) It consists of indium (In), titanium (Ti), zinc (Zn), and oxygen (O), contains ₂ to 20 mol% of In in terms of In ₂ O ₃ , and Ti in terms of TiO 2 ˜15.4 mol%, Zn is 60 mol% or more in terms of ZnO , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Zn is C (at%) ), 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, and the bulk resistance is 8.7 mΩ · cm or less,
2) It consists of indium (In), titanium (Ti), tin (Sn), and oxygen (O), contains ₂ to 20 mol% of In in terms of In ₂ O ₃ , and Ti in terms of TiO 2 ˜15.4 mol%, Sn is contained in an amount of 80 mol% or more in terms of SnO ₂ , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Sn is C ( at%), 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, and the bulk resistance is 87 mΩ · cm or less,
3) The sintered body according to 1) or 2) above, wherein In is contained in an amount of ₂ to 20 mol% in terms of In ₂ O ₃ and Ti is contained in an amount of ₃ to 15.4 mol% in terms of TiO ₂ .
4) The sintered body according to any one of 1) to 3) above, wherein 0 <C / (A + B) <5,
5) The sintered body according to any one of 1) to 4) above, wherein the relative density is 90% or more,
6) It consists of indium (In), titanium (Ti), zinc (Zn) 2 , and oxygen (O), contains ₂ to 20 mol% In in terms of In ₂ O ₃ , and Ti ₂ to 15 in terms of TiO ₂ .4 mol%, Zn is 60 mol% or more in terms of ZnO , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Zn is C (at%). 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, the refractive index at a wavelength of 550 nm is 2.05 or more, and the extinction coefficient at a wavelength of 450 nm is 0.05 or less. Optical adjustment thin film, characterized by
7) It consists of indium (In), titanium (Ti), tin (Sn) 2 , and oxygen (O), contains ₂ to 20 mol% of In in terms of In ₂ O ₃ , and Ti ₂ to 15 in terms of TiO ₂ 4 mol%, Sn is contained in an amount of 80 mol% or more in terms of SnO ₂ , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Sn is C (at% ) 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, the refractive index at a wavelength of 550 nm is 2.05 or more, and the extinction coefficient at a wavelength of 450 nm is 0.05 or less. A thin film for optical adjustment, characterized in that
8) The method for producing a sintered body according to any one of claims 1 to 5, wherein the raw material powder is subjected to pressure sintering at 900 ° C. or higher and 1500 ° C. or lower in an inert gas or vacuum atmosphere. Alternatively, after the raw material powder is press-molded, the compact is subjected to atmospheric pressure sintering at 1000 ° C. or higher and 1500 ° C. or lower in an inert gas or vacuum atmosphere.

According to the present invention, by employing the material system described above, it is possible to obtain a conductive film having a high transmittance and a high refractive index, and it is possible to ensure desired optical characteristics. Further, the present invention has excellent effects such as improvement of characteristics of various optical devices, reduction of equipment cost, and significant improvement of productivity due to improvement of film formation speed.

The present invention comprises indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn), and oxygen (O), and In is converted to In ₂ O ₃ . 2 to 65 mol%, Ti or Cr is contained in an amount of 2 to 65 mol% in terms of TiO ₂ or Cr ₂ O ₃ , the atomic ratio of In is A (at%), and the atomic ratio of Ti or Cr is B (at %), Zn or Sn atomic ratio C (at%), 0.5 ≦ A / B ≦ 5, and 0 <C / (A + B) <10. . Thereby, a conductive film having a high transmittance and a high refractive index can be obtained.
The material of the present invention includes indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn), and oxygen (O) as constituent elements. The material also contains inevitable impurities.

The material system of the present invention has the formula: M ¹ M ² O ₃ (M ³ O) _m (M ¹ : first component, M ² : second component, M ³ : third component, m is a natural number of 1 or more) Is a material that can have a homologous structure, and as a high refractive index material, In or Fe as the first component, Ti, Cr, In, Fe or Sn as the second component, Examples of the third component include Zn, Sn, Cu, Mn, Fe, and Co. However, Fe, Cu, Mn, and Co are not preferable because the band gap is small and absorption occurs in the visible light region.
Therefore, it is decided to adopt In as the first component. Moreover, it is determined that Zn or Sn is adopted as the third component. Furthermore, since In and Sn cannot be used as the second component to increase the refractive index, it is determined to employ Ti or Cr as the second component.

In the present invention, the In content is ₂ to 65 mol% in terms of In ₂ O ₃ . More preferably, it is 2-30 mol%. The content of Ti or Cr is respectively 3～65Mol% in terms of TiO ₂ or terms _{of Cr} 2 _{O 3.} More preferably, it is 3-30 mol%. The content of the third component Zn or Sn can be derived from the content of In and Ti or Cr and the C / (A + B) atomic ratio defined above, but preferably 40 mol% in terms of ZnO or SnO. That's it. Thereby, a conductive film having a desired high transmittance and high refractive index can be realized.

In the present invention, the A / B atomic ratio is 0.5 ≦ A / B ≦ 5. Exceeding this range is not preferable because desired optical characteristics cannot be obtained. In particular, when A / B is 5 or more, there is a problem that the content of the high refractive index material (Ti or Cr) decreases and the refractive index decreases. In the present invention, the C / (A + B) atomic ratio is 0 <C / (A + B) <10, and more preferably 0 <C / (A + B) <5. If it exceeds this range, the content of the high refractive index material decreases as described above, and there is a problem that the desired high refractive index cannot be obtained.

When the sintered body of the present invention is used as a sputtering target, the relative density is preferably 90% or more. The improvement in density has the effect of improving the uniformity of the sputtered film and suppressing the generation of particles during sputtering. The relative density of 90% or more can be realized by the method for producing a sintered body of the present invention described later.
Moreover, when using the sintered compact of this invention as a sputtering target, it is preferable to set it as bulk resistance 10 ohm * cm or less. Due to the decrease in bulk resistance, film formation by DC sputtering becomes possible. Compared with RF sputtering, DC sputtering is faster in film formation, has better sputtering efficiency, and can improve throughput. Depending on the manufacturing conditions, RF sputtering may be performed, but even in that case, the film formation rate is improved.

The thin film produced by sputtering according to the present invention can achieve a refractive index of 2.05 or more at a wavelength of 550 nm. The thin film of the present invention can achieve an extinction coefficient of 0.05 or less at a wavelength of 450 nm. Furthermore, the thin film of the present invention can achieve a specific resistance of 1 MΩ · cm or less. Such a conductive thin film having a high refractive index and a high transmittance is useful for optical devices such as displays and touch panels as a thin film for optical adjustment. In particular, the present invention can obtain a film having a high refractive index having an extinction coefficient of 0.01 nm or less at a wavelength of 450 nm and almost no absorption in a short wavelength region, and thus an excellent material system for obtaining desired optical characteristics. It can be said.

The thin film of the present invention includes a crystallized film and an amorphous film in the composition range described above. Furthermore, there exists a state in which both are coexisting and are partially crystallized films. In the present invention, the crystallinity of such a film is not particularly limited, but the composition can be adjusted in accordance with the desired crystallinity. Note that the crystallinity of the film (a crystallized film, an amorphous film, or a partially crystallized film) can be evaluated by the presence or absence of a diffraction peak by an X-ray diffraction method.

In the sintered body of the present invention, the raw material powder composed of the oxide powder of each constituent metal is subjected to pressure sintering (hot pressing) under an inert gas atmosphere or a vacuum atmosphere, or the raw material powder is press-molded. Then, it can manufacture by carrying out an atmospheric pressure sintering of this molded object. At this time, the sintering temperature is preferably 900 ° C. or higher and 1500 ° C. or lower. When the temperature is lower than 900 ° C., a high-density sintered body cannot be obtained. On the other hand, when the temperature is higher than 1500 ° C., composition deviation and density decrease due to evaporation of the material are undesirable.

  Hereinafter, description will be made based on Examples and Comparative Examples. In addition, a present Example is an example to the last, and is not restrict | limited at all by this example. In other words, the present invention is limited only by the scope of the claims, and includes various modifications other than the examples included in the present invention.

Evaluation methods and the like in Examples and Comparative Examples are as follows.
(About component composition)
Device: SPS3500DD manufactured by SII
Method: ICP-OES (High Frequency Inductively Coupled Plasma Atomic Emission Analysis)
(About relative density)
The density of the sintered body was calculated from the volume and measured weight of the sintered body measured with a caliper.
As shown below, the theoretical density was obtained by multiplying each single element density of the raw material oxide by the mixing mass ratio and totaling the obtained values. The relative density was obtained by dividing the density of the oxide sintered body by the theoretical density and multiplying by 100.
Theoretical density = Σ {(unit density of each oxide × mixing mass ratio) + (unit density of each oxide × mixing weight ratio) +.
Relative density = {(density of sintered body) / (theoretical density)} × 100
(About bulk resistance [specific resistance, sheet resistance])
Apparatus: Resistivity measuring instrument Σ-5 + manufactured by NPS
Method: DC 4 probe method (refractive index, extinction coefficient)
Apparatus: Spectrophotometer UV-2450 manufactured by SHIMADZU
Method: Calculated from transmittance and front and back surface reflectance (deposition method and conditions)
Equipment: ANELVA SPL-500
Substrate: φ4inch
Substrate temperature: room temperature

Example 1
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1150 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape.
Next, sputtering was carried out using the above-finished target having a diameter of 6 inches. The sputtering conditions were DC sputtering, sputtering power 500 W, Ar gas pressure 0.5 Pa containing 0 to 2 vol% oxygen, and a film thickness of 5000 mm. The substrate was not heated during sputtering or annealed after sputtering.
The results are shown in Table 1. As shown in Table 1, the sputtering target had a relative density of 98.9%, the bulk resistance was 2.9 × 10 ⁻³ Ω · cm, and stable DC sputtering was possible. The sputtered thin film has a refractive index of 2.10 (wavelength 550 nm), an extinction coefficient of 0.01 (wavelength 450 nm), and a resistance value of 2.3 × 10 ⁻² Ω · cm or higher, which is highly refractive. And a highly transparent conductive film was obtained. The resistance value varies slightly depending on the amount of oxygen during sputtering, and the resistance value tends to increase as the amount of oxygen increases. Therefore, the lower limit value is described.

(Example 2)
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1150 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 100.3%, the bulk resistance was 8.7 × 10 ⁻³ Ω · cm, and stable DC sputtering was possible. The sputtered thin film has a refractive index of 2.15 (wavelength 550 nm), an extinction coefficient of less than 0.01 (wavelength 450 nm), and a resistance value of 1.8 × 10 ⁺² Ω · cm or higher, which is highly refractive. And a highly transparent conductive film was obtained.

( Reference Example 3)
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1100 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 99.5%, the bulk resistance was 3.5 × 10 ⁻³ Ω · cm, and stable DC sputtering was possible. The sputtered thin film has a refractive index of 2.22 (wavelength 550 nm), an extinction coefficient of less than 0.01 (wavelength 450 nm), and a resistance value of 1.2 × 10 ⁺² Ω · cm or higher, which is highly refractive. And a highly transparent conductive film was obtained.

( Reference Example 4)
In ₂ O ₃ powder, Cr ₂ O ₃ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1100 ° C. and a pressure of 350 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 100.2%, the bulk resistance was 8.0 × 10 ⁻⁴ Ω · cm, and stable DC sputtering was possible. The sputtered thin film has a refractive index of 2.10 (wavelength 550 nm), an extinction coefficient of 0.02 (wavelength 450 nm), and a resistance value of 2.8 × 10 ⁻² Ω · cm or higher, which is highly refractive. And a highly transparent conductive film was obtained.

(Example 5)
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1150 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 100.1%, the bulk resistance was 9.6 × 10 ⁻⁴ Ω · cm, and stable DC sputtering was possible. The thin film formed by sputtering has a refractive index of 2.12 (wavelength 550 nm), an extinction coefficient of less than 0.01 (wavelength 450 nm), and a resistance value of 8.7 × 10 ⁻³ Ω · cm or higher. A conductive film having a refractive index and a high transmittance was obtained.

(Example 6)
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1100 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 99.8%, the bulk resistance was 8.4 × 10 ⁻⁴ Ω · cm, and stable DC sputtering was possible. The thin film formed by sputtering has a refractive index of 2.05 (wavelength 550 nm), an extinction coefficient of less than 0.01 (wavelength 450 nm), and a resistance value of 9.3 × 10 ⁻³ Ω · cm or higher. A conductive film having a refractive index and a high transmittance was obtained.

( Reference Example 7)
In ₂ O ₃ powder, Cr ₂ O ₃ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1150 ° C. and a pressure of 350 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 98.2%, the bulk resistance was 5.2 × 10 ⁻³ Ω · cm, and stable DC sputtering was possible. The thin film formed by sputtering has a refractive index of 2.07 (wavelength 550 nm), an extinction coefficient of 0.03 (wavelength 450 nm), and a resistance value of 3.6 × 10 ⁻² Ω · cm or higher and a high refractive index. And a highly transparent conductive film was obtained.

(Example 8)
In ₂ O ₃ powder, TiO ₂ powder, and SnO ₂ powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, after press-molding this mixed powder, the compact was sintered at room temperature in an argon atmosphere at a temperature of 1300 ° C. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the relative density of the sputtering target reached 97.8%, the bulk resistance was 8.7 × 10 ⁻² Ω · cm, and stable DC sputtering was possible. The sputtered thin film has a refractive index of 2.08 (wavelength 550 nm), an extinction coefficient of 0.01 (wavelength 450 nm), a resistance value of 3.1 × 10 ¹ Ω · cm or higher, and a high refractive index. In addition, a highly transparent conductive film was obtained.

(Comparative Example 1)
In ₂ O ₃ powder, Fe ₂ O ₃ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1050 ° C. and a pressure of 350 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the sputtered thin film had an extinction coefficient of 0.16 (wavelength 450 nm) and light absorption occurred in a low wavelength region, and a desired high transmittance film could not be obtained.

(Comparative Example 2)
In ₂ O ₃ powder, TiO ₂ powder, and CuO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1050 ° C. and a pressure of 350 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the sputtered thin film had an extinction coefficient of 0.2 or more (wavelength 450 nm) and light absorption occurred in a low wavelength region, and a desired high transmittance film could not be obtained.

(Comparative Example 3)
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. At this time, the atomic ratio of In / Ti was increased to 8.0. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1150 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the sputtered thin film had a refractive index of 2.01 (wavelength 550 nm) and a refractive index decreased, and a desired high refractive index film could not be obtained.

(Comparative Example 4)
In ₂ O ₃ powder, TiO ₂ powder, and ZnO powder were prepared, and these powders were blended at a blending ratio described in Table 1 and mixed. At this time, the atomic ratio of Zn / (In + Ti) was increased to 15. Next, this mixed powder was hot-press sintered under the conditions of a temperature of 1050 ° C. and a pressure of 250 kgf / cm ^{2 in} an argon atmosphere. Thereafter, the sintered body was machined to finish the target shape. Next, sputtering was performed under the same conditions as in Example 1 by using the finished target having a diameter of 6 inches. As a result, the sputtered thin film had a refractive index of 2.02 (wavelength 550 nm) and the refractive index decreased, and a desired high refractive index film could not be obtained.

The thin film formed by sputtering according to the present invention forms a part of the structure of an optical adjustment thin film or an optical disk in a display or touch panel, and has extremely excellent characteristics in transmittance, refractive index, and conductivity. There is.
Moreover, since the sputtering target made of the sintered body of the present invention has a low bulk resistance value and a high density, it enables stable DC sputtering. And there is a remarkable effect that the controllability of sputtering, which is a feature of this DC sputtering, can be facilitated, the film forming speed can be increased, and the sputtering efficiency can be improved. In addition, particles generated during sputtering during film formation can be reduced, and film quality can be improved.

Claims (8)

It consists of indium (In), titanium (Ti), zinc (Zn), and oxygen (O), contains ₂ to 20 mol% of In in terms of In ₂ O ₃ , and Ti in the range of ₂ to 15 in terms of TiO 2. .4 mol%, Zn is 60 mol% or more in terms of ZnO , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Zn is C (at%). A sintered body characterized in that 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, and the bulk resistance is 8.7 mΩ · cm or less. It consists of indium (In), titanium (Ti), tin (Sn), and oxygen (O), contains ₂ to 20 mol% of In in terms of In ₂ O ₃ , and Ti in the range of ₂ to 15 in terms of TiO 2. 4 mol%, Sn is contained in an amount of 80 mol% or more in terms of SnO ₂ , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Sn is C (at% ), 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, and the bulk resistance is 87 mΩ · cm or less. _{3. The} sintered body according to claim 1, wherein In is contained in an amount of ₂ to 20 mol% in terms of In ₂ O ₃ and Ti is contained in an amount of ₃ to 15.4 mol% in terms of TiO ₂ .   The sintered body according to claim 1, wherein 0 <C / (A + B) <5.   A relative density is 90% or more, The sintered compact as described in any one of Claims 1-4 characterized by the above-mentioned. It consists of indium (In), titanium (Ti), zinc (Zn) 2 , and oxygen (O), contains ₂ to 20 mol% In in terms of In ₂ O ₃ , and Ti ₂ to 15.4 mol in terms of TiO _2. When Zn is 60 mol% or more in terms of ZnO , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Zn is C (at%) 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, the refractive index at a wavelength of 550 nm is 2.05 or more, and the extinction coefficient at a wavelength of 450 nm is 0.05 or less. A thin film for optical adjustment. It consists of indium (In), titanium (Ti), tin (Sn) 2 , and oxygen (O), contains ₂ to 20 mol% of In in terms of In ₂ O ₃ , and Ti ₂ to 15.4 mol in terms of TiO _2. And Sn is contained in an amount of 80 mol% or more in terms of SnO ₂ , the atomic ratio of In is A (at%), the atomic ratio of Ti is B (at%), and the atomic ratio of Sn is C (at%). 0.5 ≦ A / B ≦ 5 and 0 <C / (A + B) <10, the refractive index at a wavelength of 550 nm is 2.05 or more, and the extinction coefficient at a wavelength of 450 nm is 0.05 or less. An optical adjustment thin film characterized by   It is a manufacturing method of the sintered compact as described in any one of Claims 1-5, Comprising: Raw material powder is pressure-sintered at 900 degreeC or more and 1500 degrees C or less under inert gas or a vacuum atmosphere, or a raw material A method for producing a sintered body comprising press-molding powder and then sintering the compact at 1000 ° C to 1500 ° C under an inert gas or vacuum atmosphere.