JP5933956B2 - Electrode structure of electronic parts - Google Patents

Description

  The present invention relates to an electrode structure of an electronic component.

  2. Description of the Related Art Conventionally, some electronic components such as resistors using metal lead frames and metal resistors have electrode portions formed by plating.

  For example, Patent Document 1 describes a resistor in which a bonding electrode pad and a connection electrode are formed on a metal resistor by plating. Patent Document 2 describes a resistor in which a low melting point metal is formed by plating on electrodes provided in a U shape at both ends of a metal resistor.

JP 2001-118701 A Japanese Patent Laid-Open No. 2003-3401

  However, the metal plating may peel from the metal substrate due to various causes such as surface oxidation of the metal substrate to be plated and plating stress.

  The present invention was devised to solve the above-described problems, and provides an electrode structure for an electronic component that improves adhesion of a metal plating layer and suppresses peeling when an electrode is formed by metal plating. The purpose is to do.

To achieve the above object, an electrode structure of an electronic component according to the present invention is an electrode structure of an electronic component comprising a metal plate and a plated electrode layer formed on the metal plate, and the electrode structure is divided. Having a cut surface along a reference line when doing, provided at the end of the metal plate with a stepped portion formed due to a cut groove serving as a guide when dividing along the reference line, the plating electrode layer Oite direction to the stepped portion is mainly characterized in that it comprises a plurality of connection points is 3 or more surfaces different from each other and connected.
Further, the electrode structure of the electronic component of the present invention is an electrode structure of an electronic component comprising a metal plate and a plated electrode layer formed on the metal plate, and the electrode structure is used as a reference line when dividing. A plated electrode layer formed on the metal plate is provided on the end portion of the metal plate, the plated electrode layer formed on the metal plate includes the through hole. The main feature is that a plurality of connection points are provided in which three or more surfaces having different directions are connected to each other at the end portion of the metal plate provided with.

  The electrode structure of the electronic component of the present invention includes a metal plate and a plated electrode layer formed on the metal plate, and has a stepped portion or a recess, and the plated electrode layer is oriented in the stepped portion or the recessed portion. Have a plurality of connection points where three or more different surfaces are connected to each other. For this reason, the number of surfaces in different directions to be joined around the connection point in the stepped portion or the recessed portion is increased, and these are bonded to each other, so that even if stress in a specific direction is applied, peeling is prevented. The

It is a figure which shows the structural example of the electronic component which has the electrode structure of this invention. It is a figure which shows the structural example of the electronic component which has the electrode structure of this invention. It is a figure which shows the structural example of the chip resistor which has the electrode structure of this invention. It is a figure which shows the B1-B1 cross section of FIG. 3, and a B2-B2 cross section. It is a figure which shows an example of the manufacturing method of the chip resistor of FIG. It is a figure which shows the structural example of the chip resistor which has the electrode structure of this invention. It is a figure which shows the B3-B3 cross section of FIG. It is a figure which shows an example of the manufacturing method of the chip resistor of FIG.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. The drawings are schematic, and there may be a case where portions having different dimensional relationships and ratios are included between the drawings.

  FIG. 1 shows a structural example of an electronic component having an electrode structure according to the present invention. Fig.1 (a) shows the perspective view of a part of electronic component. FIG.1 (b) shows A1-A1 sectional drawing of Fig.1 (a). A plated electrode layer 2 is formed on a plate-like metal plate 1. The plating electrode layer 2 is a metal layer formed by plating, and is configured by a Cu (copper) plating layer or a plating layer in which a solder plating layer is laminated on a Cu plating layer.

  Here, the metal plate 1 is formed with a cylindrical through-hole 3A as one form of the recess. As shown in the cross-sectional view of FIG. 1B, the plating electrode layer 2 is continuously and integrally formed over the surface of the metal plate 1 and the metal plate 1 inside the through hole 3A and the back surface of the metal plate 1. Yes. The plated electrode layer 2 is formed so as to cover all the metal plate 1 existing inside the through hole 3A.

  Here, paying attention to one point on the circular edge of the through hole 3A, for example, S1, the plated electrode layer 2a laminated on the surface of the metal plate 1 and the metal plate 1 inside the through hole 3A are included in S1. The plated electrode layer thus formed is connected without any gap. Here, the plating electrode layer formed on the metal plate 1 inside the through-hole 3A is composed of plating electrode layers 2b and 2c formed in two different directions starting from S1. Therefore, in S1, it is a connection point where three surfaces in different directions are connected without a gap. Since the number of surfaces in different directions to be joined increases at the connection point S1, it becomes strong against stress in a specific direction. Since such connection points S1 exist innumerably on the circular shape of the edge of the through hole 3A, there are a plurality of connection points where three or more surfaces having different directions are connected.

  In addition, the plating electrode layer formed on the inner surface of the through hole 3A connects the plating electrode layer formed on the surface of the metal plate 1 and the plating electrode layer formed on the back surface of the metal plate 1. For this reason, in the metal plate 1, the plated electrode layer on the front surface and the plated electrode layer on the back surface are physically coupled with the metal plate 1 interposed therebetween, and the coupling force is increased. Thereby, peeling, dropping off, displacement, etc. of the plating electrode layer can be prevented.

  FIG. 2 shows an example in which the shape of the through hole is different from that in FIG. FIG. 2A is a perspective view of a part of the electronic component. FIG.2 (b) shows A2-A2 sectional drawing of Fig.2 (a). A plated electrode layer 2 is formed on the metal plate 1. The plating electrode layer 2 is composed of a Cu plating layer or a plating layer in which a solder plating layer is laminated on the Cu plating layer.

  Here, the metal plate 1 is formed with a rectangular parallelepiped through-hole 3B as one form of the recess. As shown in the cross-sectional view of FIG. 2B, the plating electrode layer 2 is formed integrally and continuously over the surface of the metal plate 1 and the metal plate 1 inside the through hole 3B and the back surface of the metal plate 1. Yes. The plated electrode layer 2 is formed so as to cover all the metal plate 1 existing inside the through hole 3B.

  When attention is paid to one point on the square of the edge of the through hole 3B, for example, S2, the plated electrode layer 2b laminated on the surface of the metal plate 1 and the metal plate 1 existing inside the through hole 3B are included in S2. The plating electrode layer 2b formed on one side surface of this metal plate and the plating electrode layer 2c formed on the side surface having a different direction from this side surface are joined without any gap. Therefore, in S2, it is a connection point where three surfaces in different directions are connected. There are four such connection points S2 on the square of the edge of the through hole 3B, and there are eight connection points including the back surface of the through hole 3B. It will have multiple.

  As in FIG. 1, the plating electrode layer formed on the inner surface of the through-hole 3 </ b> B connects the plating electrode layer formed on the surface of the metal plate 1 and the plating electrode layer formed on the back surface of the metal plate 1. Become. For this reason, in the metal plate 1, the plated electrode layer on the front surface and the plated electrode layer on the back surface are physically coupled with the metal plate 1 interposed therebetween, and the coupling force is increased. Thereby, peeling, dropping off, displacement, etc. of the plating electrode layer can be prevented.

  As can be seen from FIGS. 1 and 2, any shape of through-hole can be used.

  Next, a chip resistor will be described as an example of an electronic component on which a plated electrode layer having a plurality of connection points where three or more surfaces having different directions are connected in the stepped portion. FIG. 3 shows a configuration example of a chip resistor 100 using a metal plate as a resistor. 3A is a perspective view of the chip resistor 100, and FIG. 3B is a plan view of FIG. 3A viewed from above. FIG. 4A shows a B1-B1 cross section in FIG. 3A, and FIG. 4B shows a B2-B2 cross section in FIG.

  The chip resistor 100 includes a resistor 11, insulating layers 12a and 12b, and a pair of plated electrode layers 13. An insulating layer 12 a is stacked on the surface of the rectangular chip-shaped resistor 11, and an insulating layer 12 b is stacked on the back surface of the resistor 11.

  The plating electrode layer 13 is configured by, for example, a copper (Cu) plating layer or a plating layer in which a solder plating layer is stacked on the copper plating layer.

  The resistor 11 is provided with four step portions 15, and both end portions are formed in a convex shape protruding from both sides (X direction in FIG. 3B) starting from the step portion 15. The resistor 11 has a chip shape in which the thickness of each part is constant, and is made of metal. Specific examples of the material include, but are not limited to, a Ni—Cr alloy, a Cu—Mn alloy, a Fe—Cr alloy, and the like, and a resistance corresponding to the target resistance value of the chip resistor. What has a rate should just be selected suitably.

  Each of the insulating layers 12a and 12b is an epoxy resin-based resin film. The insulating layer 12 b is provided in a region between the pair of electrodes 13 on the lower surface of the resistor 11. On the other hand, the insulating layer 12 a is provided in the region between the pair of plating electrode layers 13 on the upper surface of the resistor 11.

  Further, as shown in FIG. 3B, the width W1 of the center portion of the chip resistor 100 is larger than the width W2 of the end portion. This is because the step portions 15 are provided at the four corners, and the step portions 15 are formed due to cut grooves 17 described later. Moreover, the said convex shape is comprised by the part of the width W2.

  In the cross-sectional view of FIG. 4A, the pair of plating electrode layers 13 are, for example, substantially U-shaped in a side view. As can be seen from FIGS. 3 and 4, the plating electrode layer 13 includes a portion 13 b that covers the lateral side of the resistor 11, a portion 13 a that covers the surface of the resistor 11, and the back surface of the resistor 11. The covering portion 13c and the side surface portions 13d and 13e constituting the step portion 15 are continuously connected. Since the plating electrode layer 13 is formed by plating, a part of them overlaps the insulating layers 12a and 12b.

  As in the cross-sectional view of FIG. 4A, a part of the plating electrode layer 13 overlaps the insulating layers 12a and 12b also on the side surface of FIG. As will be described later, the conductive layer 13A is plated and then cut along the dividing line C1. Therefore, the surface 13f shown in FIG. 3A shows a cut surface of the conductive layer 13A and does not cover the side surface of the resistor 11 along the X direction. In FIG. 3, the stepped portion 15 is shown in a right-angled shape. However, the plating electrode layer 13 d and the plating electrode layer 13 e may be configured to be smoothly connected by a method of forming a cut groove 17 described later. it can.

  Here, for example, when attention is paid to the vertex S3 in the step portion 15, the plating electrode layers 13a, 13d, and 13e are connection points connected without gaps, and there are a plurality of connection points.

  Thus, the plating electrode layer 13 is formed so as to cover all exposed surfaces of the region including the step portion 15 at the end portion of the metal plate that is the raw material of the resistor 11. In the case of the structure of FIG. 3, one end portion of the metal plate is composed of five surfaces that connect the front surface and the back surface and the front surface and the back surface, so that there are seven exposed surfaces. The plating electrode layer is continuously and integrally formed so as to cover all the seven surfaces. Thereby, since the number of surfaces in different directions to be joined increases, it becomes strong against stress in a specific direction, and it is possible to prevent the plating electrode layer from being peeled off, dropped off or displaced.

  In particular, in the chip resistor 100, peeling easily occurs from the edge (end) 110 of the plated electrode layer 13. For this reason, when the level difference part 15 exists in the place close | similar to the edge part 110, and there exists a connection point where several surfaces gathered in this level difference part 15, since peeling will be suppressed there, it is more preferable.

  An example of a manufacturing method of the chip resistor of FIG. 3 is shown in FIG. First, as shown in FIG. 5A, a metal plate 11A that is a material of the resistor 11 is prepared. The plate 11A has such a length that a plurality of resistors 11 can be taken, and the thickness is made uniform throughout.

  In addition, a plurality of cut grooves 17 are formed at the end in the longitudinal direction of the plate 11A. As will be described later, the cut groove 17 also serves as a reference line when dividing into individual chip resistors.

  As shown in FIG. 5B, the insulating layer 12A is formed in a stripe shape on the upper surface of the plate 11A. Next, the insulating layer 12B is formed in a stripe shape on the lower surface of the plate 11A. The insulating layers 12A and 12B are formed by, for example, thick film printing of an epoxy resin. The insulating layers 12A and 12B function as a plating resist.

Next, as illustrated in FIG. 5C, the conductive layer 13 </ b> A is formed in a region where the insulating layers 12 </ b> A and 12 </ b> B are not stacked among the regions at both ends on the longitudinal direction side of the plate 11 </ b> A. This is done, for example, by copper plating. The conductive layer 13 </ b> A is a portion that becomes a prototype of the plated electrode layer 13. As a method for performing such partial plating, for example, a reel-to-reel system in which pretreatment, plating, post-treatment, drying, winding, and the like of a linear product wound on a reel are continuously performed can be used.

  The conductive layer 13A is formed on the entire inner surface of the cut groove 17 by the above plating process. The conductive layer 13A is continuously formed over the entire concavo-convex region formed at the end along the longitudinal direction of the plate 11A.

  Next, the conductive layer 13A, the insulating layers 12A and 12B, and the plate 11A are cut along a line indicated by a dividing line C1 corresponding to the center of the cut groove 17. By this cutting, the structure in FIG. 5C is separated into a plurality of elements, and this element becomes the chip resistor 100 having the step portion 15 shown in FIG.

  At the time of cutting, stress acts in the cutting direction, but all the exposed surfaces of the cut grooves and the protrusions formed at the ends along the longitudinal direction of the plate 11A are covered with the plating electrode layer. As a result, it is possible to prevent the plating electrode layer from being peeled off, dropped off, or displaced at the time of cutting.

  Next, FIG. 6 shows another configuration example of the chip resistor in which the plated electrode layer having a plurality of coupling points where three or more surfaces having different directions are coupled is formed. A B3-B3 cross section of FIG. 6 is shown in FIG.

  The chip resistor 200 includes a resistor 21, insulating layers 12a and 12b, and a pair of plated electrode layers 23. An insulating layer 12 a is stacked on the surface of the rectangular chip-shaped resistor 21, and an insulating layer 12 b is stacked on the back surface of the resistor 21.

  The plating electrode layer 23 is configured by, for example, a copper plating layer or a plating layer in which a solder plating layer is stacked on the copper plating layer.

  The resistor 21 has a rectangular chip shape in which the thickness of each part is constant, and is made of metal. Specific examples of the material include, but are not limited to, a Ni—Cr alloy, a Cu—Mn alloy, a Fe—Cr alloy, and the like, and a resistance corresponding to the target resistance value of the chip resistor. What has a rate should just be selected suitably.

  Each of the insulating layers 12a and 12b is an epoxy resin-based resin film. The insulating layer 12 b is provided in a region between the pair of electrodes 23 on the lower surface of the resistor 21. On the other hand, the insulating layer 12 a is provided in the region between the pair of plated electrode layers 23 on the upper surface of the resistor 21.

  The pair of plated electrode layers 23 is, for example, substantially U-shaped in a side view, and covers a portion that covers the side surface of the resistor 21 on the short side, a portion that covers the surface of the resistor 21, and a back surface of the resistor 21. It has a structure in which the portions are continuously connected. Since the plating electrode layer 23 is formed by plating, a part of the plating electrode layer 23 overlaps the insulating layers 12a and 12b.

  On the other hand, a through hole 26 is formed in the resistor 21 and the plated electrode layer 23 as one form of a recess. The through hole 26 is completely penetrated from the upper surface of the plating electrode layer 23 through the resistor 21 to the lower surface of the plating electrode layer 23. Further, the resistor 21 inside the through hole 26 is all covered with a plating electrode layer 23, and this portion is bonded to the plating electrode layer covering the surface of the resistor 21 and the plating electrode layer covering the back surface of the resistor 21. Has been. This is an application of the through-hole structure described in FIGS.

  As described in FIGS. 1 and 2, the plating electrode layer formed inside the through hole 26 includes a plating electrode layer formed on the surface of the resistor 21 and a plating electrode layer formed on the back surface of the resistor 21. As the number of surfaces in different directions to be joined increases, the plating electrode layer on the front surface of the resistor 21 and the plating electrode layer on the back surface are physically coupled with the resistor 21 interposed therebetween. And the bond becomes stronger. Thereby, peeling, dropping off, displacement, etc. of the plating electrode layer can be prevented.

  As in the case of the chip resistor 100, the chip resistor 200 is easily peeled off from the edge 210 of the plated electrode layer 23. For this reason, it is more preferable that the through hole 26 exists near the edge portion 210 and that there is a connection point where a plurality of surfaces are gathered in the through hole 26, since peeling is suppressed there.

  An example of a manufacturing method of the chip resistor of FIG. 6 is shown in FIG. First, as shown in FIG. 8A, a metal plate 21 </ b> A that is a material of the resistor 21 is prepared. The plate 21A has such a length that a plurality of resistors 21 can be taken, and the thickness is uniform throughout.

  A plurality of through holes 26A are provided at two end portions of the plate 21A on the longitudinal direction side.

  As shown in FIG. 8B, the insulating layer 12A is formed in a stripe shape on the upper surface of the plate 21A so as not to cover the through holes 26A. Next, the insulating layer 12B is formed in stripes on the lower surface of the plate 21A so as not to cover the through holes 26A. The insulating layers 12A and 12B are formed by, for example, thick film printing of an epoxy resin. The insulating layers 12A and 12B function as a plating resist.

Next, as illustrated in FIG. 8C, a conductive layer 23 </ b> A is formed in a region where the insulating layers 12 </ b> A and 12 </ b> B are not stacked, of the two ends on the longitudinal direction side of the plate 21 </ b> A. This is performed by, for example, copper plating. The conductive layer 23 </ b> A is a portion that becomes a prototype of the plated electrode layer 23. As a method of performing such partial plating, for example, the above-described reel-to-reel method can be used.

  By the plating process, the conductive layer 23A is continuously and integrally formed on the entire inner surface of the through hole 26A and the upper and lower surfaces and side surfaces of the end portion on the longitudinal direction side of the plate 21A.

  Next, the conductive layer 23A, the insulating layers 12A and 12B, and the plate 21A are cut along the line indicated by the dividing line C2. This cutting position is an intermediate position between two through holes 26 adjacent to each other in the longitudinal direction of the structure in FIG. Further, the cutting direction is the short direction of the structure of FIG. By this cutting, the structure of FIG. 8C is separated into a plurality of elements, and this element becomes the chip resistor shown in FIG.

  At the time of cutting, stress acts in the cutting direction, but the plating electrode layer formed in the through hole 26, the plating electrode layer formed on the surface of the plate 21A, and the plating electrode layer formed on the back surface of the plate 21A are combined. Therefore, it is possible to prevent the plating electrode layer from being peeled off, dropped off or displaced at the time of cutting.

DESCRIPTION OF SYMBOLS 1 Metal plate 2 Plating electrode layer 3A Through-hole 3B Through-hole 11 Resistor 12a Insulating layer 12b Insulating layer 13 Plating electrode layer 15 Step part 21 Resistor 23 Plating electrode layer 26 Through-hole 100 Chip resistor 110 Edge part 200 Chip resistor 210 Edge

Claims (10)

An electrode structure of an electronic component comprising a metal plate and a plated electrode layer formed on the metal plate,
The electrode structure has a cut surface along a reference line when dividing,
At the end of the metal plate is provided with a stepped portion formed due to a cut groove that becomes a guide when dividing along the reference line,
The electrode structure of an electronic component, wherein the plated electrode layer has a plurality of connection points where three or more surfaces having different directions are connected to each other in the stepped portion.   2. The electrode structure for an electronic component according to claim 1, wherein the plated electrode layer is continuously formed so as to cover all of the exposed surface at the end of the metal plate excluding the cut surface. .   3. The electrode structure for an electronic component according to claim 2, wherein the plated electrode layer covers the front and back surfaces of the metal plate and all the side surfaces connecting the front and back surfaces, excluding the cut surface. . An electrode structure of an electronic component comprising a metal plate and a plated electrode layer formed on the metal plate,
The electrode structure has a cut surface along a reference line when dividing,
Provided at the end of the metal plate, with a through-hole in which a plated electrode layer is formed only on the inner surface,
The plated electrode layer formed on the metal plate has a plurality of connection points where three or more surfaces having different directions are connected at the end of the metal plate provided with the through hole. Electrode structure of electronic parts.   The electrode structure for an electronic component according to claim 4, wherein a plurality of the through holes are formed.   The plating electrode layer formed on the metal plate includes a plating electrode layer formed on a surface of the metal plate, a plating electrode layer formed on a back surface of the metal plate, and the metal plate excluding the cut surface. The plating electrode layer formed on the side surface of the metal plate, the plating electrode layer formed only on the inner surface of the through-hole and formed on the surface of the metal plate and the plating electrode layer formed on the back surface of the metal plate are connected. The electrode structure for an electronic component according to claim 4, wherein the electrode structure is formed continuously with an electrode layer.   The said through-hole is provided in the vicinity of the edge part of the plating electrode layer in the surface and back surface of the said metal plate, The electrode structure of the electronic components of any one of Claims 4-6 characterized by the above-mentioned.   The electrode structure for an electronic component according to any one of claims 4 to 7, wherein the through hole has an elliptical opening.   The electrode structure for an electronic component according to claim 1, wherein the plated electrode layer is formed of a copper plated layer.   An insulating layer is provided on the front surface and the back surface of the metal plate, and an edge portion of the plating electrode layer on the front surface and the back surface of the metal plate overlaps on an end portion of the metal plate. The electrode structure of an electronic component according to any one of claims 1 to 9.

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