JP5768962B2 - Film formation processing drum in atomic layer deposition method film formation apparatus - Google Patents

Description

  The present invention relates to a technique for forming a thin film on a substrate using a gas phase. More specifically, the present invention relates to a film formation processing drum in an atomic layer deposition method film formation apparatus that forms a film while transporting a substrate.

  Methods for forming a thin film using a vapor phase are roughly classified into a chemical vapor deposition (CVD) method and a physical vapor deposition (PVD) method.

  Typical examples of PVD include vacuum deposition and sputtering. In particular, sputtering is generally high in equipment cost, but can produce high-quality thin films with excellent film quality and film thickness uniformity. Widely applied to such as.

In CVD, a raw material gas is introduced into a vacuum chamber, and one or more gases are decomposed or reacted on a substrate by thermal energy to grow a solid thin film. In order to promote the reaction or lower the reaction temperature, there are some which use plasma or a catalytic reaction in combination. PECVD (Plasma Enhanced CVD) is used in combination with plasma, and Cat-CVD (Catalytic) is used in combination with catalytic reaction.
CVD). The chemical vapor deposition method is characterized by few film formation defects, and is mainly applied to semiconductor device manufacturing processes such as gate insulating film formation.

  In recent years, attention has been paid to atomic layer deposition (ALD: Atomic Layer Deposition). ALD is a method of depositing a surface-adsorbed substance layer by layer at the atomic level by a chemical reaction on the surface, and is classified as CVD. ALD is distinguished from general CVD by the fact that general CVD uses a single gas or a plurality of gases simultaneously to react on a substrate to grow a thin film, whereas ALD uses a precursor ( Alternatively, an active gas called a precursor (also called a precursor) and a reactive gas (also called a precursor in ALD) are alternately used to grow a thin film one layer at an atomic level by adsorption and subsequent chemical reaction on the substrate surface. There is a special film formation method.

  Specifically, when the surface is covered with a certain type of gas during surface adsorption, the self-limiting effect that does not cause further gas adsorption is used. The reaction precursor is evacuated. Subsequently, a reactive gas is introduced to oxidize or reduce the precursor and obtain a thin film having a desired composition, and then the reactive gas is exhausted. This cycle is defined as one cycle, and this cycle is repeated to grow a thin film one layer at a time. Therefore, in ALD, the thin film grows two-dimensionally. ALD is characterized in that it has fewer film-forming defects than conventional CVD and sputtering as well as conventional vapor deposition and sputtering, and is expected to be applied in various fields.

  In ALD, there is a method of using plasma to activate the reaction in the step of decomposing the second precursor and reacting with the first precursor adsorbed on the substrate, which is a plasma activated ALD ( PEALD: Plasma Enhanced ALD) or simply Plasma ALD.

The ALD technology itself was developed in 1974 by Finnish Dr. Proposed by Tuomo Suntola. Since high-quality and high-density films can be obtained, applications such as gate insulating films are being promoted in the semiconductor industry. ITRS (International Technology)
(Loadmap for Semiconductors). In addition, because it has a feature such as no slanting effect compared to other film formation methods, film formation is possible if there is a gap through which gas can enter, as well as line and hole coating with a high aspect ratio, as well as a three-dimensional structure. It is expected to be applied to MEMS (Micro Electro Mechanical Systems) related to the coating of materials.

  The disadvantages of ALD include the use of special materials and their costs, but the biggest drawback is that ALD is a method of growing thin films at the atomic level layer by layer in one cycle. Is slow. It is about 5 to 10 times slower than film forming methods such as vapor deposition and sputtering.

  The target for forming a thin film using the film forming method as described above is a small plate-like substrate such as a wafer or a photomask, a large area such as a glass plate that is not flexible, or a large area such as a film. There are various types such as flexible substrates. In response to this, mass production facilities for forming thin films on these substrates have proposed and put to practical use various substrate handling methods depending on cost, ease of handling, film formation quality, and the like.

  For example, in a wafer, a single substrate is supplied to a film forming apparatus to form a film, and then replaced with the next substrate to form a film again, or a plurality of substrates are set together and the same for all wafers There is a batch type for forming the film.

  In addition, as a method of forming a film on a glass substrate or the like, an in-line type in which film formation is performed simultaneously while sequentially transporting the substrate to a source of film formation, and moreover, mainly for a flexible substrate There is a so-called roll-to-roll web coating method in which a substrate is unwound from a roll, film is formed while being conveyed, and the substrate is wound on another roll. The web coating method includes not only a flexible substrate but also a method of continuously forming a flexible sheet on which a substrate to be deposited can be continuously conveyed or a tray on which a part of the substrate is flexible.

  As for any film forming method and substrate handling method, an optimum combination is adopted in consideration of cost, quality, ease of handling, and the like.

  In the formation of an optical film or the like, it is necessary to form different types of thin films in multiple layers. In ALD, depending on the film thickness, 100 to 200 cycles of precursor exposure are performed to form a film. In such a case, the web coating method using a flexible substrate requires one film forming source for one layer. For this reason, there has been proposed a film forming apparatus in which a plurality of film forming sources are provided and a plurality of cycles of film forming are performed in one process.

  As such conventional film forming apparatuses, there are those disclosed in Patent Document 1 and Patent Document 2. The film forming apparatus disclosed in Patent Document 1 performs film formation using ALD in a vacuum chamber, and transports a thin film substrate wound around the outer surface of a processing drum between two rolls. The film is formed on the outer surface of the thin film substrate by a plurality of film forming sources arranged radially on the outer periphery of the processing drum. A sufficiently thick layer can be formed by exposing the substrate to a plurality of deposition sources.

  In addition, the film forming apparatus disclosed in Patent Document 2 performs film formation using CVD, and transports a film-forming tape wound around the outer surface of the film-forming roller between two rollers. It consists of the structure which forms into a film on the outer surface of a film-forming tape by the some CVD part arrange | positioned radially on the outer peripheral part of a film | membrane roller. The multilayer film can be efficiently formed without time waste.

Special table 2007-522344 International Publication No. 2006/093168

  However, the technique described in Patent Document 1 has a disadvantage that the entire apparatus is larger than the processing drum because a plurality of film forming sources are arranged radially on the outer periphery of the processing drum. . In addition, as the number of cycles increases, the size of the equipment increases, and the production cost and the area occupied by the equipment increase.

  In addition, the technique disclosed in Patent Document 2 has a disadvantage that the entire apparatus becomes large because a plurality of CVD portions are arranged radially on the outer peripheral portion of the film forming roller in order to perform multilayer processing by CVD. It was.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a film formation processing drum in an atomic layer deposition method film formation apparatus that can reduce the size of the entire apparatus and can form a multilayer film formation.

  The present invention employs the following configuration in order to solve the above problems.

The present invention relates to a film forming drum in a film forming apparatus for forming a film on a surface of a film forming substrate while winding the film forming substrate at a predetermined angle around a film forming processing drum and continuously or intermittently transporting the film forming substrate.
The film formation processing drum includes a rotating drum provided with a film formation substrate gas processing unit, and the film formation substrate gas processing unit includes a recess provided on the surface of the rotation drum with a predetermined width. .

  In addition, the deposition substrate gas processing unit has a configuration in which a plurality of gases are sequentially released and exhausted.

  In addition, a plurality of recesses are provided, and a plurality of gases are individually discharged from the respective recesses.

  The recess is provided with a gas discharge hole and a gas exhaust hole.

Further, the film forming processing drum further comprises a rotation shaft, rotary drum is driven to rotate around the rotation shaft by the rotational driving unit, successive grooves is provided on the outer surface of the rotating shaft portion, to face the groove that the recess is found provided with gas ejection holes, the gas outgassing holes to release characterized in that it is supplied through the interior of the rotary shaft portion.

The film formation processing drum further includes a rotation shaft portion, and the rotation drum is driven to rotate around the rotation shaft portion by the rotation drive portion. A continuous groove is provided on the outer surface of the rotation shaft portion, and faces the groove. The recess is provided with a gas exhaust hole, and gas is exhausted from the gas exhaust hole through the inside of the rotary shaft portion.

  Further, a magnetic fluid is disposed between the inner surface of the rotating drum and the outer surface of the rotating shaft portion, and gas sealing is performed by the magnetic fluid.

  The film formation processing drum further includes a film formation substrate guide portion that is provided at both ends of the rotating drum and holds the film formation substrate at a predetermined diameter.

  According to the present invention, since it has the above-described features, the following can be achieved.

That is, a film forming process is performed in a film forming process drum in a film forming apparatus that forms a film on the surface of the film forming substrate while winding the film forming substrate on a film forming process drum at a predetermined angle and continuously or intermittently transporting the film forming process drum. The drum includes a rotating drum provided with a film forming substrate gas processing unit, and the film forming substrate gas processing unit includes a concave portion provided with a predetermined width on the surface of the rotating drum. It is not necessary to provide the gas processing section radially on the outer peripheral portion of the processing drum, the entire apparatus can be downsized, and a multilayer film can be formed by rotating the rotating drum a plurality of times.
In addition, the deposition substrate gas processing unit is a recess provided with a predetermined width on the surface of the rotating drum, so that while the rotating drum is rotated, a predetermined amount of gas is filled in the recess and the gas is adsorbed on the surface of the deposition substrate. Can be made.

  In addition, since the deposition substrate gas processing unit has a configuration in which a plurality of gases are sequentially released and exhausted, the gas can be adsorbed on the deposition target substrate surface and unreacted gas can be exhausted.

  In addition, a plurality of recesses are provided, and a plurality of gases are individually discharged from the respective recesses, so that a plurality of gases can be processed without being mixed.

  Moreover, since the gas discharge hole and the gas exhaust hole are provided in the recess, the gas can be quickly discharged and exhausted.

Further, the film forming processing drum further comprises a rotation shaft, rotary drum is driven to rotate around the rotation shaft by the rotational driving unit, successive grooves is provided on the outer surface of the rotating shaft portion, to face the groove that the recess is found provided with gas ejection holes, the gas outgassing holes release is fed through the inside of the rotating shaft portion, the rotation drum rotates and the position of the gas emission hole and the groove is maintained Gas can be supplied.

The film formation processing drum further includes a rotation shaft portion, and the rotation drum is driven to rotate around the rotation shaft portion by the rotation drive portion. A continuous groove is provided on the outer surface of the rotation shaft portion, and faces the groove. A gas exhaust hole is provided in the recess, and gas is exhausted from the gas exhaust hole through the inside of the rotating shaft. Therefore, even if the rotary drum rotates, the position of the gas discharge hole and the groove is maintained, and the gas is exhausted. be able to.

  In addition, a magnetic fluid is disposed between the inner surface of the rotating drum and the outer surface of the rotating shaft portion, and the gas is sealed by this magnetic fluid, so that the gas is securely sealed and the rotating drum rotates when the rotating drum rotates. The hindrance such as friction can be reduced.

  The film formation processing drum further includes film formation substrate guide portions that are provided at both ends of the rotating drum and hold the film formation substrate at a predetermined diameter, so that the inner surface of the film formation substrate held at the predetermined diameter The rotating drum can be freely rotated.

Schematic of the film-forming apparatus which concerns on one Embodiment of this invention Schematic of the principal part of the film-forming apparatus which concerns on one Embodiment The disassembled perspective view of the principal part of the film-forming apparatus which concerns on one Embodiment The disassembled perspective view of the principal part of the film-forming apparatus which concerns on one Embodiment The perspective view of the part of the principal part of the film-forming apparatus which concerns on one Embodiment. Schematic of a part of a main part of a film forming apparatus according to an embodiment

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic diagram showing the overall configuration of an atomic layer deposition method film forming apparatus (hereinafter sometimes abbreviated as “film forming apparatus” as appropriate) 1. FIG. 2 is a schematic view showing an assembled state of a film forming process drum (hereinafter, simply referred to as a process drum) 100 which is a main part of the film forming apparatus 1. FIG. 3 is a perspective view when the processing drum 100 is disassembled. FIG. 4 is a schematic diagram showing a rotating drum portion 101 and a rotating shaft portion 102 which are the main parts of the processing drum 100. FIG. 5 is a perspective view showing the rotating shaft portion 102 . FIG. 6 is a perspective view showing a state in which the rotating shaft portion 102 and the substrate guide portion 103 are combined.

  The film forming apparatus 1 is an apparatus that performs a film forming process on the flexible substrate (film forming substrate) 2 by the processing drum 100. As shown in FIG. 1, the film forming apparatus 1 includes a processing drum 100, an unwinding roll 3, a winding roll 4, an unwinding side guide roller 5, a winding side guide roller 6, a plasma apparatus 7, and a chamber 8. The entire film forming apparatus 1 is housed in a chamber 8. The inside of the chamber 8 is kept in a vacuum by a vacuum pump (not shown).

  As shown in FIG. 1, the flexible substrate 2 is unwound from the unwinding roll 3, wound around the outer periphery of the processing drum 100 by a unwinding side guide roller 5 and a winding side guide roller 6, and conveyed. It is wound up by a winding roll 4. A film forming process is performed on the inner surface of the flexible substrate 2 wound around the processing drum 100 by a film forming source provided on the processing drum 100.

  The flexible substrate 2 is a flexible long film, and is continuously formed by the unwinding roll 3, the unwinding side guide roller 5, the processing drum 100, the winding side guide roller 6, and the winding roll 4. Or it is conveyed intermittently.

As shown in FIG. 1, the flexible substrate 2 covers 90% or more of the outer periphery of the rotating drum portion 101 out of 360 ° in the circumferential direction. By configuring in this way, diffusion of gas diffusion is prevented, mixing of different gases is prevented, and generation of particles is prevented.

Next, the processing drum 100 will be described with reference to FIGS. As shown in FIGS. 2 and 3, the processing drum 100 includes a rotating drum unit 101, a rotating shaft unit 102, and a substrate guide unit 103. In FIG. 3, the single substrate guide 103 on the right side is not shown.

  The rotating drum unit 101 is driven to rotate around the rotating shaft unit 102 by a processing drum rotation driving unit (not shown). The substrate guide portion 103 has a disk shape with a round hole in the center, is provided on both sides of the rotating drum portion 101, and is configured to be rotatable around the outer peripheral portion of the rotating shaft portion 102. Independently of the rotation of the rotating drum unit 101, the substrate guide unit 103 is rotationally driven by a substrate guide rotation driving unit (not shown). The rotation of the processing drum rotation driving unit and the substrate guide rotation driving unit is controlled by a control unit (not shown).

The rotating shaft 102 is fixed without rotating, and the pipe 104 is connected. There are four pipes 104, one thick pipe is for exhaust, and the other three thin pipes are supplied with three types of gases.
The above-described control unit controls whether to supply or stop the gas or not to exhaust the gas through the pipe 104.

  In FIG. 2, the outer width of the left and right substrate guide portions 103 is formed substantially the same as the width of the flexible substrate 2. Since both ends in the width direction of the flexible substrate 2 are wound so as to cover the outer periphery of the substrate guide portion 103, the inner surface of the flexible substrate 2 is held at the same diameter as the outer shape of the substrate guide portion 103. When the substrate guide portion 103 is rotationally driven, the flexible substrate 2 whose outer edge is wound around the substrate guide portion 103 is also rotationally driven and conveyed.

  In FIG. 2, the outer diameter of the rotating drum portion 101 is smaller than the outer diameter of the left and right substrate guide portions 103 by a predetermined dimension. The inner surface of the flexible substrate 2 wound around the rotating drum unit 101 is driven to rotate independently of the conveyance speed of the flexible substrate 2.

As shown in FIG. 2, a plurality of partitions are formed on the surface of the rotary drum unit 101, and a concave portion 106 is formed that forms a partition (small chamber with an open upper surface) partitioned by the partitions.
As shown in FIG. 4, the recess 106 is a bottomed recess that is substantially parallel to the central axis of rotation and has a long opening in the width direction, and is formed on the side surface of the rotary drum 101 having a substantially cylindrical shape. In the form, eight strips are formed at equal intervals.
One of gas discharge holes 105 a, 105 b, and 105 c constituting the gas discharge part 105 and a gas exhaust hole 107 are formed in the bottom part of the concave part 106 as two through holes . As for the position from the side surface of the rotating drum portion 101, the gas exhaust holes 107 are formed in the same manner, but the adjacent gas discharge holes 105a, 105b, 105c are positions facing the grooves 108a, 108b, 108c of the rotating shaft portion 102. Is formed.

Gas discharge holes 105a constituting the gas discharge unit 105, 105b, 105c is, in the direction of rotation, the gas discharge holes 105a, 105c, 105b, are formed in the order of 105c. As will be described later, these correspond to different gases, and one cycle of film formation can be performed by the gas discharge holes 105a, 105c, 105b, and 105c. In this embodiment, the recess 106 is formed in eight strips on the rotary drum portion 101 , and the gas discharge portions 105a, 105c, 105b, 105c , 105a, 105c, 105b, and 105c are arranged in the recess 106 in this order. Since 105 is formed, the film forming process can be performed in two cycles in one round.

As shown in FIG. 5, four groove portions 108 that are shifted laterally little by little are formed in the radial direction in the central portion of the rotating shaft portion 102. A pipe 104 composed of four connecting pipes is provided on one end face of the rotating shaft portion 102. The four groove portions 108a, 108b, 108c, and 108d communicate with the pipe 104 including four connecting pipes, respectively. The thicker connecting pipe of the pipes 104 communicates with the wide groove part 108 d of the four groove parts 108.

  As shown in FIGS. 4 and 5, the outer peripheral surface of the rotating shaft portion 102 on both sides of the four groove portions 108a, 108b, 108c, and 108d is provided with a seal portion 109 that is endless in the radial direction. ing. The seal portion 109 is made of a magnetic fluid. The magnetic fluid fills the gap between the inner cylindrical portion of the rotary drum portion 101 and the rotary shaft portion 102, thereby sealing the grooves 108.

As shown in FIG. 4, the four grooves 108a, 108b, 108c, 108d, the gas discharge holes 105a, 105b, 105c, and the gas exhaust hole 107 are slightly shifted laterally, as shown in FIG. When assembled, the holes and the grooves are formed at opposing positions. Since the groove portion 108 is continuously provided on the outer periphery, the positional relationship with the gas discharge portion 105 and the gas exhaust hole 107 is maintained even when the rotary drum portion 101 rotates.

  Since seal portions 109 are provided on both sides of the groove portion 108 and sealed, the gas discharge holes 105a, 105b, 105c and the gas exhaust hole 107 eventually pass through the four groove portions 108a, 108b, 108c, 108d. The pipes 104 communicate with each other via the inside of the rotating shaft portion 102. That is, when three types of gas are supplied to the pipe 104, the respective gases are released from the gas discharge holes 105a, 105b, and 105c. The thicker connecting pipe of the pipes 104 is an exhaust pipe, and exhaust is performed from a gas exhaust hole 107 communicating therewith.

The three types of gases are a first precursor, a second precursor, and a purge gas, which are supplied from the pipe 104, and the respective gases are controlled by the control unit from the gas discharge holes 105a, 105b, and 105c, so that the recess 106 To be released. Further, if the exhaust is performed through the thicker pipe 104, the gas is exhausted from the recess 106.

  If the conveyance of the flexible substrate 2 is stopped, the first precursor is discharged into the concave portion 106 and the rotary drum unit 101 is rotated, the surface of the flexible substrate 2 wound around the processing drum 100 adsorbs the first precursor on one layer. To do. Next, if the flexible substrate 2 is stopped as it is, and the rotary drum unit 101 is rotated and the exhaust is performed, the gas is exhausted from the recess 106, so that the unreacted first precursor that has not been adsorbed is exhausted. The Similarly, the second precursor is processed while the flexible substrate 2 is stopped, and the purge gas is further processed. In this way, one cycle is completed and one layer is formed. By repeating this cycle, a multilayer film is formed.

  When a predetermined film is formed, the length of the flexible substrate 2 wound around the processing drum 100 is transported, and the next processing is performed. In this way, the flexible substrate 2 is intermittently transported to perform the film forming process.

  Therefore, in the present embodiment, the plurality of concave portions 106 provided in the rotating drum unit 101 are film forming sources. In addition, when the rotational speed of the rotating drum unit 101 is sufficiently faster than the transport speed of the flexible substrate 2, the flexible substrate 2 can be transported continuously during film formation.

With the above-described configuration, the film forming source is disposed on the rotating drum unit 101, thereby realizing a reduction in the size of the entire apparatus. In addition, although the conventional film forming source is fixed, the film forming process of many cycles can be easily performed by rotating the film forming source. By downsizing the apparatus, the chamber 8 can also be reduced in size, and the effect is great particularly when the chamber 8 having a vacuum inside is used.
In addition, ALD is a method of growing an atomic level thin film layer by layer in one cycle, and the film formation speed is slow. However, by rotating the film formation source, multi-layer formation is facilitated, and the drawbacks of ALD are also eliminated. can do.

  In this embodiment, two types of gas are used and one gas cycle is performed by four gas discharge portions 105. However, when three or more types of precursors are used, a further concave portion 106 is provided in the rotary drum portion 101. It may be assigned. The same applies when two or more types of purge gas are used.

Here, the purge gas has one of its roles, and has the purpose of preventing the respective precursors from mixing and reacting in the space. Therefore, the gas discharge hole 105c for supplying the purge gas has the respective gas for supplying the precursor. It may be provided between the discharge holes . That is, the gas discharge holes 105a for supplying for example a first precursor, between the gas discharge holes 105b for supplying a second precursor, as arranged gas ejection holes 105c for supplying a purge gas, outgassing A gas discharge hole for supplying a purge gas may be arranged between the hole 105b and the gas discharge hole for the third precursor. On the other hand, when the unadsorbed or unreacted precursor can be sufficiently removed only by exhaust, it is not necessary to introduce any purge gas.

In the present embodiment, the flexible substrate is used as the film formation substrate, but another flexible film or sheet may be used. Moreover, even if it is a rigid body with no flexibility, such as glass and a wafer, this invention is applicable if it is a form which can be conveyed along a rotating drum. For example, this is the case when a small substrate is transported while being fixed to a transport sheet or belt sheet. It can be applied to film formation by the so-called web coating method. That is, these glass and wafers, small substrates, and film-formed objects in the web coating method are also included in the film-formed substrate.

  In the present embodiment, the flexible substrate 2 is driven and conveyed by the substrate guide unit 103, but is used as a so-called idler that rotates by the movement of the flexible substrate 2 without driving the substrate guide unit 103. The flexible substrate 2 may be conveyed by driving the unwinding roll 3 and the winding roll 4. Alternatively, the substrate guide portion 103 may be fixed, and both edges of the flexible substrate 2 may be configured to slide on the disk-shaped side surface of the substrate guide portion 103 so that the flexible substrate 2 is held at a predetermined diameter.

  The precursor is not limited as long as it is in a gas phase at the time of use. The purge gas may be of any type as long as it does not become a component constituting a thin film obtained by film formation. When nitrogen gas is used, a high-quality film can be produced at a lower cost. When an inert gas is used as the purge gas, the range of types of precursors that can be used is widened, and an optimum precursor can be selected from a wide variety of precursors. Among them, argon can be introduced as an inert gas at a relatively low cost, and productivity can be improved.

  Further, although the magnetic fluid is used for the seal portion 109, an O-ring or the like may be used. When a magnetic fluid is used for the seal portion 109, dust generation and the like can be suppressed, and the maintenance interval can be extended. In addition, the resistance to rotation of the rotating drum unit 101 can be reduced.

Further, the concave portion 106 of the rotating drum portion 101 may have a groove shape. A plurality of gas exhaust holes 107 at the bottom of the recess 106 may be provided. Exhaust can be efficiently performed, precursors remaining in the space without being adsorbed on the substrate can be efficiently removed, and generation of particles during film formation can be suppressed, and a high-quality thin film can be manufactured.

  Further, it is preferable that the gap (clearance) between the rotating drum unit 101 and the flexible substrate 2 is as narrow as possible. Although the substrate guide portions 103 for holding the flexible substrate 2 at a predetermined diameter are provided at both edge portions of the flexible substrate 2, if the central portion in the width direction of the flexible substrate 2 is bent, it is also disposed at the center. May be.

  Further, in this embodiment, the exhaust pipes 104 are configured to be exhausted collectively by the thick connecting pipes of the pipes 104. However, by increasing the number of exhaust pipes and the like, each of the exhausted pipes is discharged from the gas discharge unit. The gas may be exhausted separately. It becomes easy to collect and reuse the unreacted precursor.

  In the present embodiment, the chamber 8 is configured to store the entire apparatus, but may be configured to store only the processing drum 100 on which film formation is performed. In general, the chamber 8 is evacuated, but when the film is formed at atmospheric pressure, the chamber 8 can be adapted.

  Further, the rotary drum unit 101 may be provided with a heating mechanism. By heating the substrate on which the precursor is adsorbed, the reaction can be promoted and the growth of the thin film can be promoted. In addition, a precursor that needs to be heated for film formation can be used. When a flash lamp is used as a heat source, temperature control is relatively easy and radiant heat can be used, which is efficient. A water cooling mechanism may be provided for a portion where heat is not desired to be transmitted to control the temperature. The heating mechanism may be provided on the wall surface of the chamber or outside the rotating drum.

Further, the rotating drum unit 101 may include a mechanism for generating or irradiating plasma. Plasma can promote the reaction of the precursor and promote the growth of the thin film. As a method for generating plasma, known techniques such as inductively coupled plasma generation (ICP) can be used in addition to radio frequency (RF) discharge and DC discharge.

  Moreover, the kind of precursor is not ask | required. It is appropriately selected depending on the film formation type and film formation temperature. Since the precursor only needs to be in a gas phase when the apparatus is used, the storage state of the precursor may be a liquid phase or a solid phase in addition to the gas phase. For example, when the precursor is in a liquid phase, it is introduced by a method such as heating or bubbling.

  The precursor may contain a carrier gas. The carrier gas is generally the same as the purge gas or one having similar properties, but is not limited thereto. When the aforementioned bubbling is used, the gas for bubbling often becomes a carrier gas.

  The purge gas does not become a component of the film, but is effective as a gas separating the first precursor release and the second precursor release. For this, in addition to a rare gas such as argon, any kind of gas can be used as long as it does not affect the film forming species.

  Further, the rotation directions of the rotating drum unit 101 and the substrate guide unit 103 may be the same direction or relatively opposite directions. Moreover, conveyance of the flexible substrate 2 may be continuous or intermittent, or may be performed in the rewind direction as necessary.

  The present invention makes it possible to carry out film formation without increasing the scale of equipment in a process of forming a thin film on a substrate through a gas phase while transporting the substrate using the ALD method, which contributes to a reduction in production cost. .

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 2 Flexible substrate 3 Unwinding roll 4 Unwinding roll 5 Unwinding side guide roller 6 Winding side guide roller 7 Plasma apparatus 8 Chamber 100 Film-forming process drum 101 Rotating drum part 102 Rotating shaft part 103 Substrate guide part 104 Piping 105 Gas discharge part 106 Recess 107 Gas exhaust hole 108 Groove part 109 Seal part

Claims (8)

In the film formation processing drum in the film formation apparatus for forming a film on the surface of the film formation substrate while winding the film formation substrate on the film formation processing drum at a predetermined angle and continuously or intermittently conveying it,
The film formation processing drum includes a rotating drum provided with a film formation substrate gas processing unit,
The film forming substrate gas processing unit includes a concave portion provided with a predetermined width on a surface of the rotating drum. The film formation processing drum according to claim 1, wherein the film formation substrate gas processing unit has a configuration in which a plurality of gases are sequentially released and exhausted. A plurality of the recesses are provided,
The film forming process drum in the film forming apparatus according to claim 2, wherein the plurality of gases are individually released from each of the recesses. The film formation processing drum in the film formation apparatus according to claim 3, wherein the recess includes a gas discharge hole and a gas exhaust hole. The film forming drum is
Furthermore, it has a rotating shaft part,
The rotary drum is rotationally driven around the rotary shaft portion by a rotary drive portion,
Inside of the on the outer surface of the rotating shaft is provided with successive grooves, the groove the gas release hole is provided we are before Symbol recess you face the gas to the gas release hole is released the rotating shaft The film-forming process drum in the film-forming apparatus of Claim 4 characterized by the above-mentioned. The film forming drum is
Furthermore, it has a rotating shaft part,
The rotary drum is rotationally driven around the rotary shaft portion by a rotary drive portion,
A continuous groove is provided on the outer surface of the rotary shaft portion, the gas exhaust hole is provided in the concave portion facing the groove, and gas is exhausted from the gas exhaust hole through the inside of the rotary shaft portion. The film-forming process drum in the film-forming apparatus of Claim 4 characterized by these. 7. The film forming apparatus according to claim 6, wherein a magnetic fluid is disposed between an inner surface of the rotating drum and an outer surface of the rotating shaft portion, and the gas is sealed by the magnetic fluid. Processing drum. The film forming drum is
The film formation processing drum in the film formation apparatus according to claim 1, further comprising a film formation substrate guide portion that is provided at both ends of the rotating drum and holds the film formation substrate at a predetermined diameter.

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