JP5754072B2 - Adhesive composition, adhesive member sheet for connecting circuit members, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to an adhesive composition, an adhesive sheet for connecting a circuit member using the same, and a method for manufacturing a semiconductor device.

  In general, a face-down bonding method in which a semiconductor chip is directly connected to a circuit board is known as a semiconductor chip mounting technique. In this method, a solder bump is formed on the electrode part of the semiconductor chip and soldered to the electrode of the circuit board, or a conductive adhesive is applied to the protruding electrode provided on the semiconductor chip to connect with the electrode of the circuit board. There are ways to make electrical connections.

  When exposed to various environments, a semiconductor device manufactured by the face-down bonding method generates stress at the connection interface due to a difference in thermal expansion coefficient between the connected chip and the substrate, and thus connection reliability is likely to decrease. Has the problem. For this reason, in order to alleviate the stress at the connection interface, the gap between the chip and the substrate is filled with an underfill material such as an epoxy resin.

  The underfill material filling method includes a method of injecting a low-viscosity liquid resin after connecting the chip and the substrate, and a method of mounting the chip after providing the underfill material on the substrate. Furthermore, the latter method includes a method of applying a liquid resin and a method of attaching a film-like resin.

  In the method using a liquid resin, it is difficult to precisely control the coating amount with a dispenser. In particular, when mounting a thin chip in recent years, if the amount applied is too large, the resin that has oozed out during bonding crawls up the side surface of the chip and contaminates the bonding tool. Therefore, in this method, the tool needs to be cleaned, and the process during mass production becomes complicated.

  On the other hand, the method using a film-like resin can easily give an optimum amount of resin by adjusting the thickness of the film, but requires a step of attaching a film-like resin called a temporary pressure bonding step to a substrate. Usually, in the pre-bonding process, a reel-shaped adhesive tape that is slit to a width larger than the target chip width is prepared, and the adhesive tape on the base material is cut according to the chip size. Thermocompression bonding is performed on the substrate at a temperature that does not react. However, since it is difficult to accurately supply the film to the chip mounting position and it is difficult to process a narrow reel corresponding to a microchip, it is generally pasted by provisional pressure bonding to secure the yield. This can be done by making the film larger than the chip size. For this reason, in this method, it is necessary to secure an extra distance from adjacent components and a mounting area, and it is difficult to support high-density mounting.

  Recently, a method using a chip with a film adhesive has been studied as one of high-density mounting techniques. For example, in Patent Documents 1 and 2 below, a wafer having a film-like adhesive attached thereto is prepared, and after grinding the back surface of the wafer, the wafer is cut together with the adhesive to form chips. There has been proposed a method of manufacturing a semiconductor device by manufacturing a chip with a film adhesive to which an adhesive having the same size as the chip size is attached, and mounting the chip on a circuit board.

JP 2006-049482 A Japanese Patent No. 2833111

  In the above method, after passing through a sticking process to a wafer using a film adhesive, a wafer back grinding process, a dicing process, and a flip chip bonding process, it is molded with a sealant to produce a semiconductor device (package). . Although the process can be greatly reduced by the above method, the package is required to further improve the reliability. Accordingly, development of a film-like adhesive that can produce a semiconductor device having sufficiently high reflow resistance and connection reliability is required.

  The present invention has been made in view of the above circumstances, and an adhesive composition, an adhesive sheet for connecting a circuit member, and a semiconductor that enable the production of a semiconductor device having excellent reflow resistance and connection reliability. An object is to provide a method for manufacturing a device.

  In order to solve the above problems, the present invention provides (A) a high molecular weight component having a weight average molecular weight of 100,000 or more, (B) an epoxy resin, (C) an epoxy resin curing agent, (D) a glycidyl group, and An adhesive composition comprising a compound having an ethylenically unsaturated group and (E) a photoinitiator is provided.

  According to the adhesive composition of the present invention, it is possible to produce a semiconductor device having excellent reflow resistance and connection reliability by having the above configuration.

  The present inventors presume the reason why the above effect is obtained by the adhesive composition of the present invention as follows. That is, in the manufacturing process of the semiconductor device using the adhesive composition of the present invention, the reaction between the ethylenically unsaturated group in the component (D) and the photoinitiator (E) occurs by ultraviolet irradiation, and the adhesive is bonded. Crosslinking in the agent layer proceeds, and the fluidity during heating during flip chip bonding can be controlled. Furthermore, since the component (D) has a glycidyl group, it contributes to the crosslinking reaction together with the (B) epoxy resin and the (C) epoxy resin curing agent at the time of heat curing of the final adhesive layer. Crosslinking is maintained. As a result, the elastic modulus of the adhesive layer can be increased and the linear expansion coefficient can be decreased, and it is considered possible to produce a semiconductor device that satisfies both the characteristics of reflow resistance and connection reliability at the same time. It is done.

  The adhesive composition of this invention can further contain (F) hardening accelerator from a viewpoint of accelerating hardening of (B) component.

  The present invention also provides an adhesive for circuit member connection, comprising a light-transmitting support base and an adhesive layer provided on the support base and made of the adhesive composition of the present invention. A dressing sheet is provided.

  The present invention further provides a semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces, and the adhesive sheet for connecting circuit members of the present invention is provided on the side of the semiconductor wafer on which the circuit electrodes are provided. The step of applying the adhesive layer, the step of thinning the semiconductor wafer by grinding the opposite side of the semiconductor wafer where the circuit electrodes are provided, and the step of irradiating the adhesive layer with radiation And dicing the thinned semiconductor wafer and the adhesive layer irradiated with radiation to separate into a semiconductor element with a film adhesive, and a semiconductor element with a film adhesive and a semiconductor There is provided a method for manufacturing a semiconductor device comprising a step of bonding an element mounting support member to a film-like adhesive of a semiconductor element with a film-like adhesive. Thereby, a semiconductor device having excellent reflow resistance and connection reliability can be manufactured.

  ADVANTAGE OF THE INVENTION According to this invention, the adhesive composition which enables preparation of the semiconductor device which is excellent in reflow resistance and connection reliability, the adhesive sheet for circuit member connection using this, and the manufacturing method of a semiconductor device Can be provided.

It is a schematic cross section which shows suitable one Embodiment of the adhesive agent sheet for a circuit member connection which concerns on this invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention.

  FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. A circuit member connecting adhesive sheet 10 shown in FIG. 1 is provided with a supporting base material 3 and an adhesive layer 2 provided on the supporting base material 3 and made of the adhesive composition of the present invention. And a protective film 1 covering the adhesive layer 2.

  First, the adhesive composition according to the present invention constituting the adhesive layer 2 will be described.

  The adhesive composition according to the present invention comprises (A) a high molecular weight component having a weight average molecular weight of 100,000 or more, (B) an epoxy resin, (C) an epoxy resin curing agent, and (D) a glycidyl group. And a compound having an ethylenically unsaturated group, and (E) a photoinitiator.

  (A) As a high molecular weight component having a weight average molecular weight of 100,000 or more, those having a functional group such as a glycidyl group, an acryloyl group, a methacryloyl group, a carboxyl group, a hydroxyl group, and an episulfide group are preferable from the viewpoint of improving adhesiveness. . Examples of such a high molecular weight component include (meth) acrylic ester copolymers and acrylic rubber. In particular, acrylic rubber is more preferable. The acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer with butyl acrylate and acrylonitrile or a copolymer with ethyl acrylate and acrylonitrile. Examples of the copolymer monomer include butyl acrylate, ethyl acrylate methyl acrylate, ethyl acrylate, methyl methacrylate, ethyl methacrylate, acrylonitrile and the like.

  The component (A) is preferably a high molecular weight component having a glycidyl group from the viewpoint of crosslinkability. Specific examples include a glycidyl group-containing (meth) acrylic copolymer having a weight average molecular weight of 100,000 or more obtained by polymerizing a raw material monomer containing glycidyl acrylate or glycidyl methacrylate. In addition, in this specification, a glycidyl group containing (meth) acryl copolymer is a phrase which shows both a glycidyl group containing acrylic copolymer and a glycidyl group containing methacryl copolymer.

  As the glycidyl group-containing (meth) acrylic copolymer having a weight average molecular weight of 100,000 or more, a glycidyl group-containing (meth) acrylic copolymer prepared by appropriately selecting a monomer from the copolymerization monomer and glycidyl acrylate or glycidyl methacrylate can be used. Moreover, a commercial item (For example, Nagase ChemteX Co., Ltd. make, brand name "HTR-860P-3" etc.) can also be used.

  (A) The high molecular weight component having a weight average molecular weight of 100,000 or more can adjust the crosslinking density by appropriately changing the content of the functional group. When the high molecular weight component is a copolymer of a plurality of monomers, the functional group-containing monomer used as a raw material is preferably contained in an amount of about 0.5 to 6.0% by mass of the copolymer.

  In the case of a glycidyl group-containing (meth) acrylic copolymer, the repeating unit having a glycidyl group such as glycidyl acrylate or glycidyl methacrylate is preferably 0.5 to 6.0 mass%, more preferably 0.5 to 5.0 mass. %, Even more preferably 0.8 to 5.0% by mass of a glycidyl group-containing (meth) acrylic copolymer is used. When the amount of the repeating unit having a glycidyl group is in the above range, the glycidyl group is slowly crosslinked, and thus it is easy to prevent gelation while securing the adhesive force. Moreover, since it becomes incompatible with (B) epoxy resin, it will be excellent in stress relaxation property.

  In addition to the glycidyl acrylate or glycidyl methacrylate, other functional groups may be incorporated in the glycidyl group-containing (meth) acrylic copolymer. In this case, the mixing ratio is preferably determined in consideration of the glass transition temperature of the glycidyl group-containing (meth) acrylic copolymer. Specifically, it is preferable to set the mixing ratio so that the glass transition temperature of the polymer is -10 ° C or higher. It is preferable for the glass transition temperature of the polymer to be −10 ° C. or higher because the tackiness of the adhesive layer in the B-stage state is appropriate and does not cause problems in handling.

  When the glycidyl group-containing acrylic copolymer obtained by polymerizing the glycidyl group-containing monomer is used as the component (A), the polymerization method is not particularly limited, and examples thereof include methods such as pearl polymerization and solution polymerization. Can be used.

  In the present invention, the weight average molecular weight of the component (A) is 100,000 or more, preferably 300,000 to 3,000,000, more preferably 400,000 to 2,500,000, and 500,000 to 2,000,000. It is particularly preferred. When the weight average molecular weight is within this range, it becomes easy to satisfactorily balance the strength, flexibility and tackiness of the adhesive layer made into a sheet or film, and the flowability of the adhesive layer. Therefore, the circuit filling property (embedding property) of the wiring can be sufficiently secured. In the present specification, the weight average molecular weight is a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.

  Moreover, it is preferable that (A) component is incompatible with (B) epoxy resin at the point of reflow resistance. However, since compatibility is not determined only by the characteristics of the component (A), a combination in which both the components (A) and (B) are not compatible is selected.

  (B) The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. For example, epoxy resins described in an epoxy resin handbook (Shinho Masaki, edited by Nikkan Kogyo Shimbun) are widely used. be able to. Specifically, for example, a bifunctional epoxy resin such as a bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, a trisphenolmethane type epoxy resin, or the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

  As the bisphenol A type epoxy resin, trade names “Epicoat 807”, “Epicoat 815”, “Epicoat 825”, “Epicoat 827”, “Epicoat 828”, “Epicoat 834”, “Epicoat” are available. 1001 "," Epicoat 1004 "," Epicoat 1007 "and" Epicoat 1009 ", manufactured by Dow Chemical Co., Ltd., trade names" DER-330 "," DER-301 "and" DER-361 ", and manufactured by Tohto Kasei Co., Ltd. Product names “YD8125” and “YDF8170” may be mentioned. As a phenol novolac type epoxy resin, products manufactured by Japan Epoxy Resin Co., Ltd., trade names “Epicoat 152” and “Epicoat 154”, Nippon Kayaku Co., Ltd., trade name “EPPN-201”, manufactured by Dow Chemical Co., Ltd. The name “DEN-438” is mentioned. Moreover, as an o-cresol novolak type epoxy resin, Nippon Kayaku Co., Ltd. make, brand name "EOCN-102S", "EOCN-103S", "EOCN-104S", "EOCN-1012", "EOCN-1025" And “EOCN-1027”, manufactured by Tohto Kasei Co., Ltd., trade names “YDCN701”, “YDCN702”, “YDCN703”, and “YDCN704”. As the polyfunctional epoxy resin, product name “E1032-H60” manufactured by Japan Epoxy Resin Co., Ltd., product name “Araldite 0163” manufactured by Ciba Specialty Chemicals Co., Ltd., and product name “Denacol EX-” manufactured by Nagase Kasei Co., Ltd. "611", "Denacol EX-614", "Denacol EX-614B", "Denacol EX-622", "Denacol EX-512", "Denacol EX-521", "Denacol EX-421", "Denacol EX-411" And “Denacol EX-321”. As the amine type epoxy resin, Japan Epoxy Resin Co., Ltd., trade name “Epicoat 604”, Toto Kasei Co., Ltd., trade name “YH-434”, Mitsubishi Gas Chemical Co., Ltd., trade name “TETRAD-” X "," TETRAD-C ", manufactured by Sumitomo Chemical Co., Ltd., and trade name" ELM-120 ". As the heterocyclic ring-containing epoxy resin, trade names “Araldite PT810” manufactured by Ciba Specialty Chemicals, trade names “ERL4234”, “ERL4299”, “ERL4221”, and “ERL4206” are available. These epoxy resins can be used alone or in combination of two or more.

  Moreover, in this invention, in order to provide high adhesive force, it is preferable to use a bisphenol A type epoxy resin and a phenol novolac type epoxy resin.

  The content of the component (B) in the adhesive composition according to the present embodiment is preferably 5 to 500 parts by mass, and 10 to 400 parts by mass with respect to 100 parts by mass of the component (A). Is preferable, and it is more preferable to set it as 40-300 mass parts. When content of (B) component exists in said range, the elasticity modulus of the adhesive agent layer formed in the film form and the flow property suppression at the time of shaping | molding can fully be ensured, and the handleability in high temperature can be made favorable.

  (C) When combined with an epoxy resin, the epoxy resin curing agent is excellent in impact resistance under high temperature and high pressure, and can maintain sufficient adhesive properties even under severe thermal moisture absorption.

  Although it does not specifically limit as (C) component, From a viewpoint of improving heat resistance, it is preferable that it is a phenol type epoxy resin hardening | curing agent, For example, phenol resins, such as a phenol novolak resin, bisphenol A novolak resin, or a cresol novolak resin Etc. can be used. More specifically, for example, trade names “Phenolite LF4851”, “Phenolite TD-2090”, “Phenolite TD-2149”, “Phenolite VH-4150”, “Phenolite VH4170” manufactured by DIC Corporation. ”,“ LA-3018 ”, manufactured by Nippon Kayaku Co., Ltd., trade name“ DPN-L ”, manufactured by Meiwa Kasei Co., Ltd., trade name“ MEH-7500 ”. Moreover, these can be used individually or in combination of 2 or more types.

  The content of the component (C) in the adhesive composition according to the present invention is the equivalent ratio of the phenolic hydroxyl group of the component (C) to the epoxy group of the component (B) from the viewpoint of imparting electric corrosion resistance during moisture absorption. Is preferably 0.5 to 1.5, and more preferably 0.8 to 1.2. By containing the component (C) at such an equivalent ratio, the curing (crosslinking) of the epoxy resin can proceed to a sufficient level, and the glass transition temperature of the cured product can be sufficiently increased. Thereby, the moisture resistance of the cured adhesive layer and the connection reliability at high temperature can be sufficiently secured, and as a result, the electric corrosion resistance at the time of moisture absorption is more reliably improved.

  The compound having a glycidyl group and an ethylenically unsaturated group as component (D) is a photoreactive monomer having reactivity not only with heat but also with light. In the component (D), examples of the ethylenically unsaturated group include a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadiimide group, and a (meth) acryl group. From this point of view, a (meth) acryl group is preferred. Moreover, a glycidyl group may be called an epoxy group in a text.

  Although it does not specifically limit as (D) component, For example, the functional group and ethylenically unsaturated group which react with a glycidyl group other than glycidyl methacrylate, glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 4-hydroxybutyl methacrylate glycidyl ether A compound obtained by reacting a compound having a polyfunctional epoxy resin with a polyfunctional epoxy resin can be used. Although it does not specifically limit as a functional group which reacts with the said glycidyl group, An isocyanate group, a carboxyl group, a phenolic hydroxyl group, a hydroxyl group, an acid anhydride, an amino group, a thiol group, an amide group etc. are mentioned. These compounds can be used individually by 1 type or in combination of 2 or more types.

  The component (D) is, for example, in the presence of triphenylphosphine or tetrabutylammonium bromide, a polyfunctional epoxy resin having at least two epoxy groups in one molecule, and 0.1 to 0 with respect to 1 equivalent of epoxy groups. Obtained by reacting with 9 equivalents of (meth) acrylic acid. Also, by reacting a polyfunctional isocyanate compound with a hydroxy group-containing (meth) acrylate and a hydroxy group-containing epoxy compound in the presence of dibutyltin dilaurate, or reacting a polyfunctional epoxy resin with an isocyanate group-containing (meth) acrylate. And glycidyl group-containing urethane (meth) acrylate and the like.

  The component (D) preferably has a 5% weight loss temperature of 150 ° C. or higher from the viewpoints of storage stability, adhesiveness, low outgassing of the package during and after assembly heating, and heat and humidity resistance. More preferably, it is 200 degreeC or more, Most preferably, it is 260 degreeC or more.

  Furthermore, as the component (D), it is possible to use a high-purity product in which alkali metal ions, alkaline earth metal ions, halogen ions, particularly chlorine ions and hydrolyzable chlorine are reduced to 1000 ppm or less as impurity ions. It is preferable from the viewpoint of prevention of electromigration and corrosion of metal conductor circuits. For example, the impurity ion concentration can be satisfied by using a polyfunctional epoxy resin with reduced alkali metal ions, alkaline earth metal ions, halogen ions, and the like as a raw material.

  (D) It is preferable that a component has an aromatic ring from a heat resistant viewpoint. The component (D) satisfying the above heat resistance and purity is not particularly limited, but bisphenol A type (or AD type, S type, F type) glycidyl ether, water-added bisphenol A type glycidyl ether, ethylene oxide adduct Bisphenol A and / or F type glycidyl ether, propylene oxide adduct bisphenol A and / or F type glycidyl ether, phenol novolac resin glycidyl ether, cresol novolac resin glycidyl ether, bisphenol A novolac resin glycidyl ether, naphthalene resin Glycidyl ether, trifunctional (or tetrafunctional) glycidyl ether, dicyclopentadiene phenolic resin glycidyl ether, dimer acid glycidyl ester, trifunctional (or tetrafunctional) Rishijiruamin include glycidyl amines of naphthalene resins those as raw material.

In particular, wettability, and improves the low stress property and adhesion, reflow resistance, in order to maintain the anti-TC T resistance, (D) the number of the glycidyl groups and ethylenically unsaturated groups of component following three respectively In particular, the number of ethylenically unsaturated groups is preferably 2 or less. Although it does not specifically limit as such (B) component, The compound etc. which are represented by following General formula (13), (14), (15), (16) or (17) are used preferably. In the following general formulas (13) to (17), R ¹² represents a hydrogen atom or a methyl group, R ¹⁰ , R ¹¹ , R ¹³ and R ¹⁴ represent a divalent organic group, and are preferably alkylene groups. . R ^{15 to} R ¹⁹ represent an organic group having a glycidyl group or an ethylenically unsaturated group. Among the R ¹⁶ and R ¹⁷ in Formula (16), an organic group either one having a glycidyl group, an organic group other is having an ethylenically unsaturated group. Similarly, the R ¹⁸ and R ¹⁹ in formula (17), an organic group either one having a glycidyl group, an organic group other is having an ethylenically unsaturated group.

  The content of the component (D) in the adhesive composition of the present embodiment is preferably 1 to 100 parts by mass, and 2 to 80 parts by mass with respect to 100 parts by mass of the component (A). More preferably, it is 5 to 70 parts by mass. If this content exceeds 100 parts by mass, the thixotropy tends to be reduced during film formation, and film formation tends to be difficult, and tackiness tends to increase, resulting in insufficient handling properties. In addition, since the film is too hard after UV irradiation and the embedding property and wettability on the substrate are lowered, the adhesion and reflow resistance tend to be affected. On the other hand, when the content of the component (D) is less than 1 part by mass, the effect of addition tends to be insufficient.

  Examples of (E) photoinitiator include 1-hydroxy-cyclohexyl phenyl ketone and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide. Commercial products such as “Irg-184” and “Irg-819” manufactured by Ciba Specialty Chemicals can be used.

  It is preferable that the compounding quantity of (E) component in the adhesive composition which concerns on this embodiment is 0.1-30 mass parts with respect to 100 mass parts of (A) component. If the blending amount is less than 0.1 parts by mass, the unreacted component (D) tends to remain. In this case, voids increase at the time of high-temperature pressure bonding, and the embedding property tends to be adversely affected. On the other hand, when the blending amount exceeds 30 parts by mass, it is difficult to sufficiently increase the molecular weight by the polymerization reaction, and there is a tendency that many low molecular weight components exist. In this case, the low molecular weight component may affect the fluidity during heating. The blending amount is more preferably 0.5 to 20 parts by mass, and particularly preferably 1 to 10 parts by mass.

  The adhesive composition according to the present embodiment can contain (F) a curing accelerator together with (C) component in order to promote curing of (B) epoxy resin. (F) Examples of the curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazoletetraphenylborate, 1,8-diazabicyclo ( 5,4,0) undecene-7-tetraphenylborate. These can be used individually by 1 type or in combination of 2 or more types.

  The content of the component (F) in the adhesive composition according to the present embodiment is 100 parts by mass in total of the component (B) and the component (C) from the viewpoint of achieving both curability and storage stability. 0.1 to 20 parts by weight is preferable, 0.1 to 10 parts by weight is preferable, and 0.2 to 5 parts by weight is more preferable.

  Moreover, the (G) radiation polymerizable compound different from (D) component can be used together with (D) component for the purpose of providing a flexibility and tackiness to the said adhesive composition. (G) As the radiation-polymerizable compound, a compound that can be cross-linked by irradiation with radiation is exemplified. Specific examples of the component (G) include, for example, pentaerythritol triacrylate, dipentaerythritol hexaacrylate, dipentaerythritol pentaacrylate, trimethylolpropane triacrylate, isocyanuric acid EO-modified triacrylate, ditrimethylolpropane tetraacrylate, pentaerythritol. Examples include acrylates such as tetraacrylate, dicyclopentenyloxyethyl acrylate, and 2,2-bis [4- (methacryloxy · diethoxy) phenyl] propane acrylate. These compounds can be used alone or in combination of two or more. Commercial products such as Shin-Nakamura Industrial Chemical Co., Ltd., trade name “A-DPH”, Hitachi Chemical Co., Ltd., trade names “FA-512AS”, “FA-513AS” can be used.

  For the purpose of improving flexibility and reflow crack resistance, the adhesive composition according to the present invention is blended with a high molecular weight resin other than the component (A) that is compatible with the (H) epoxy resin. be able to. As such a component (H), those that are incompatible with the component (A) are preferable from the viewpoint of improving reliability, and examples thereof include phenoxy resins, high molecular weight epoxy resins, and ultrahigh molecular weight epoxy resins. These can be used alone or in combination of two or more.

  When using the (A) component and the (B) epoxy resin that are compatible with each other, the above (H) component is blended to make the (B) epoxy resin more compatible with the (H) component. (B) It may be possible to make the epoxy resin and the component (A) incompatible with each other. By such an action, flexibility and reflow crack resistance can be further improved.

  The blending amount of the component (H) is preferably 40 parts by mass or less with respect to a total of 100 parts by mass of the components (B) and (C) from the viewpoint of securing Tg of the adhesive layer.

  To the adhesive composition according to the present invention, an inorganic filler is added for the purpose of improving the handleability of the adhesive layer formed, improving the thermal conductivity, adjusting the melt viscosity and imparting thixotropic properties. Can do. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These fillers can be used alone or in combination of two or more. Further, the shape of the filler is not particularly limited.

  Among the above fillers, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable for improving thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystallinity Silica, amorphous silica and the like are preferable. Further, composite oxides such as mullite and cordierite, and clay minerals such as montmorillonite and smectite can also be used. Moreover, it is more preferable to use a nanofiller in order to improve the hot fluidity of the film.

  As for the compounding quantity of an inorganic filler, 1-100 mass parts is preferable with respect to 100 mass parts of adhesive agent whole quantity. If the blending amount is less than 1 part by mass, the addition effect tends to be insufficient, and if it exceeds 100 parts by mass, the storage elastic modulus of the adhesive layer is increased, the adhesiveness is lowered, and the void remains. There is a tendency that problems such as deterioration of electrical characteristics due to the above occur easily.

  In addition, various coupling agents can be added to the adhesive composition according to the present invention in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane, titanium, and aluminum.

  Examples of the silane coupling agent include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, and 3-aminopropylmethyl. Examples thereof include diethoxysilane, 3-ureidopropyltriethoxysilane, and 3-ureidopropyltrimethoxysilane. These can be used alone or in combination of two or more. Commercial products such as trade names “A-189” and “A-1160” manufactured by Nippon Unicar Co., Ltd. can also be used.

  It is preferable that the compounding quantity of the said coupling agent shall be 0.01-10 mass parts with respect to 100 mass parts of (A) component from the surface of an addition effect, heat resistance, and cost.

  Furthermore, an ion scavenger can be further added to the adhesive composition for the purpose of adsorbing ionic impurities and improving insulation reliability during moisture absorption. Examples of such ion-trapping agents include triazine thiol compounds and bisphenol-based reducing agents, such as compounds known as copper damage inhibitors to prevent copper ionization and dissolution, zirconium-based, and antimony bismuth-based magnesium. Examples include inorganic ion adsorbents such as aluminum compounds.

  The blending amount of the ion scavenger is preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoints of addition effect, heat resistance and cost.

  The adhesive layer 2 is obtained by dissolving or dispersing the above-mentioned adhesive composition of the present invention in a solvent to form a varnish, applying the varnish on the support substrate 3, and removing the solvent by heating. Can be formed. Alternatively, the varnish is coated on a protective film (hereinafter sometimes referred to as “release sheet”) 1 and the adhesive layer 2 is formed by removing the solvent by heating, and then the support substrate 3 is laminated. can do.

  The solvent to be used is not particularly limited, but is preferably determined in consideration of the volatility at the time of forming the adhesive layer from the boiling point. Specifically, for example, solvents having relatively low boiling points such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene are adhesives. It is preferable at the point that hardening of an adhesive layer does not advance easily at the time of layer formation. Moreover, for the purpose of improving the coating property, it is preferable to use a solvent having a high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone and the like. These solvents can be used alone or in combination of two or more.

  As the support base material 3, known materials can be used as long as they have radiation transparency. Examples of the support substrate 3 include plastic films such as a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, and a polymethylpentene film. Further, the support base 3 may be a mixture of two or more selected from the above materials, or a multilayer of the above film.

  Although the thickness of the support base material 3 does not have a restriction | limiting in particular, 5-250 micrometers is preferable. If the thickness is less than 5 μm, the support substrate may be cut during grinding (back grinding) of the semiconductor wafer, and if it is more than 250 μm, it is not economical, which is not preferable.

  The support base material 3 preferably has high light transmittance. Specifically, the minimum light transmittance in a wavelength region of 500 to 800 nm is preferably 10% or more.

  As the protective film 1, for example, a polymer film having heat resistance and solvent resistance such as polyethylene terephthalate can be used. As a commercially available thing, polyethylene terephthalate films, such as "A-31" by Teijin DuPont Films, Ltd., are mentioned, for example. The thickness of the protective film is preferably 10 to 100 μm, more preferably 30 to 75 μm, and particularly preferably 35 to 50 μm. If the thickness is less than 10 μm, the protective film tends to be broken during coating, and if it exceeds 100 μm, the cost tends to be inferior.

  Examples of a method for applying the varnish on the support substrate or the protective film include generally known methods such as a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.

  The temperature condition for removing the solvent by heating is preferably about 70 to 150 ° C.

  The thickness of the adhesive layer 2 is not particularly limited, but is preferably 3 to 200 μm. If the thickness is smaller than 3 μm, the stress relaxation effect tends to be poor. If the thickness is larger than 200 μm, it is not economical and it becomes difficult to meet the demand for downsizing of the semiconductor device.

From the viewpoint of reflow resistance, the adhesive layer 2 preferably has an adhesive force at a temperature of 260 ° C. of 1.0 MPa or more. The adhesive layer 2 preferably has an elastic modulus at 260 ° C. of 8 to 50 MPa from the viewpoint of reflow resistance, and has an elastic modulus of 0 ° C. and an elastic modulus of 125 ° C. from the viewpoint of TCT resistance. The difference is preferably 1500 MPa or less. Furthermore, from the viewpoint of TCT resistance, the adhesive layer 2 preferably has a linear expansion coefficient at 30 to 125 ° C. of 200 × 10 ⁻⁶ m / ° C. or less.

  Further, from the viewpoint of further improving the embedding property at the time of flip chip bonding, the 5% weight reduction temperature of the adhesive layer 2 is preferably 180 ° C. or higher, more preferably 200 to 350 ° C. preferable.

  The circuit member connecting adhesive sheet 10 described above is interposed between a circuit member and a semiconductor element having circuit electrodes which are opposed to each other and soldered, or between semiconductor elements, and the circuit member and the semiconductor element or semiconductor. It can be used for bonding elements together. In this case, the circuit member and the semiconductor element or the semiconductor elements can be bonded with a sufficient adhesive force while suppressing generation of voids by thermocompression bonding. Thereby, the connection body excellent in connection reliability can be obtained.

  Next, a method for manufacturing a semiconductor device using the adhesive adhesive sheet 10 for connecting circuit members will be described.

2 to 6 are schematic cross-sectional views for explaining a preferred embodiment of a semiconductor device manufacturing method according to the present invention. The manufacturing method of the semiconductor device of this embodiment is as follows:
(A) A semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces is prepared, and the adhesive sheet for connecting circuit members according to the present invention described above is provided on the side of the semiconductor wafer on which the circuit electrodes are provided. A step of applying an adhesive layer;
(B) a step of grinding the opposite side of the semiconductor wafer to the side where the circuit electrodes are provided to thin the semiconductor wafer;
(C) removing the support substrate after irradiating the adhesive layer with radiation;
(D) a step of dicing the thinned semiconductor wafer and the adhesive layer irradiated with radiation into individual semiconductor elements with a film-like adhesive;
(E) a step of adhering the semiconductor element with a film adhesive and the supporting member for mounting a semiconductor element via the film adhesive of the semiconductor element with a film adhesive;
Is provided. Hereinafter, each process will be described with reference to the drawings.

(A) Process First, the adhesive sheet 10 is arrange | positioned to a predetermined apparatus, and the protective film 1 is peeled off. Subsequently, a semiconductor wafer A having a plurality of circuit electrodes 20 on one of the main surfaces is prepared, and the adhesive layer 2 is pasted on the side of the semiconductor wafer A where the circuit electrodes are provided. A laminated body in which adhesive layer 2 / semiconductor wafer A is laminated is obtained (see FIG. 2). The circuit electrode 20 is provided with solder bumps for solder bonding. It is also possible to provide solder bumps on the circuit electrodes of the semiconductor element mounting support member without providing the circuit electrodes 20 with solder bumps.

(B) Process Next, as shown in FIG. 3A, the side of the semiconductor wafer A opposite to the side where the circuit electrodes 20 are provided is ground by the grinder 4 to thin the semiconductor wafer. The thickness of the semiconductor wafer can be, for example, 10 μm to 300 μm. From the viewpoint of miniaturization and thinning of the semiconductor device, the thickness of the semiconductor wafer is preferably 20 μm to 100 μm. In this embodiment, the support base material 3 functions as a back grind tape, but the back grind tape can be attached to the support base material 3 to grind the semiconductor wafer.

(C) Process As FIG.3 (b) shows, the adhesive layer 2 is hardened by irradiating the adhesive layer 2 with a radiation from the support base material 3 side, and the adhesive layer 2 And the adhesive force between the supporting substrate 3 is reduced. Here, examples of the radiation used include ultraviolet rays, electron beams, and infrared rays. In the present embodiment, it is preferable to use radiation having a wavelength of 300 to 800 nm. The irradiation condition is such that the irradiation amount is such that the (D) component such as the acrylic monomer is polymerized at an illuminance of 5 to 300 mW / cm ^2. It is preferable to irradiate so that it may become -1000mJ.

(D) Process Next, as FIG.4 (a) shows, the dicing tape 5 is affixed on the semiconductor A of a laminated body, this is arrange | positioned to a predetermined apparatus, and the support base material 3 is peeled off. At this time, the support base material 3 can be easily peeled off because the adhesive layer 2 is irradiated with radiation. After the support substrate 3 is peeled off, the semiconductor wafer A and the adhesive layer 2 are diced with a dicing saw 6 as shown in FIG. Thus, the semiconductor wafer A is divided into a plurality of semiconductor elements A ′, and the adhesive layer 2 is divided into a plurality of film-like adhesives 2a.

  Subsequently, as shown in FIG. 5, the dicing tape 5 was expanded (expanded) so that the semiconductor elements A ′ obtained by the dicing were separated from each other and pushed up with a needle from the dicing tape 5 side. A film-like adhesive-attached semiconductor element 12 comprising the semiconductor element A ′ and the film-like adhesive 2a is sucked and picked up by the suction collet 7.

(E) Process Next, as shown in FIG. 6, the circuit electrode 20 of the semiconductor element A ′ to which the film adhesive 2a is adhered and the circuit electrode 22 of the semiconductor element mounting support member 8 are aligned. Then, the film-like adhesive-attached semiconductor element 12 and the semiconductor element mounting support member 8 are thermocompression bonded. By this thermocompression bonding, the circuit electrode 20 and the circuit electrode 22 are electrically connected, and a cured product of the film adhesive 2a is formed between the semiconductor element A ′ and the semiconductor element mounting support member 8. Is done.

  Further, when the solder bump is provided on the circuit electrode 20 or the circuit electrode 22, the circuit electrode 20 and the circuit electrode 22 are electrically and mechanically connected by solder bonding by thermocompression bonding.

  The temperature during thermocompression bonding is preferably 200 ° C. or higher, more preferably 220 to 260 ° C., from the viewpoint of solder bonding and curing of the adhesive. The thermocompression bonding time can be 1 to 20 seconds. The pressure for thermocompression bonding can be 0.1 to 5 MPa.

  The semiconductor device 30 is obtained through the above steps. In the method for manufacturing a semiconductor device according to the present embodiment, by using the adhesive sheet for connecting circuit members according to the present invention, in the step (a), the occurrence of peeling and voids can be sufficiently suppressed, and the above (b) In the process, the wafer can be ground while sufficiently preventing the occurrence of breakage and cracks, and in the process (e), the semiconductor element and the semiconductor element mounting member are bonded well while sufficiently suppressing the generation of voids. Can do. Thereby, the semiconductor device 30 can be excellent in connection reliability. Moreover, according to the method for manufacturing a semiconductor device of this embodiment, such a semiconductor device can be manufactured with a high yield.

  Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to these examples.

(D) Component: Compound (D-1) having a glycidyl group and an ethylenically unsaturated group
In a 500 mL flask equipped with a stirrer, a thermometer and a nitrogen displacement device, 178 g of liquid high-purity bisphenol A bisglycidyl ether epoxy resin (epoxy equivalent 178 g / eq, manufactured by Toto Kasei Co., Ltd., trade name “YD-825GS”) 1.0 eq.), 36 g (0.5 eq.) Acrylic acid, 0.5 g triphenylphosphine and 0.15 g hydroquinone were added and stirred at 100 ° C. for 7 hours. The glycidyl group and ethylenically unsaturated group were introduced into the molecule. The compound (D-1) which has was obtained. (D-1) was titrated with an ethanol solution of potassium hydroxide, and it was confirmed that the acid value was 0.3 KOH mg / g or less. (5% weight loss temperature: 300 ° C., number of epoxy groups: about 1, number of (meth) acrylic groups: about 1)

(D-2)
In a 500 mL flask equipped with a stirrer, a thermometer, and a nitrogen substitution device, 174 g (1.0 equivalent) of a phenol novolac type epoxy resin (epoxy equivalent 174 g / eq, manufactured by Toto Kasei Co., Ltd., trade name “YDPN-638”), A compound having 36 g (0.5 equivalent) of acrylic acid, 0.48 g of triphenylphosphine and 0.10 g of hydroquinone and stirring at 90 ° C. to 100 ° C. for 7 hours, and having a glycidyl group and an ethylenically unsaturated group in the molecule ( D-2) was obtained. (D-2) was titrated with an ethanol solution of potassium hydroxide, and it was confirmed that the acid value was 0.3 KOH mg / g or less. (5% weight loss temperature: 310 ° C., number of epoxy groups: about 1.7, number of (meth) acrylic groups: about 1.7)

(D-3)
In a 500 mL flask equipped with a stirrer, a thermometer, and a nitrogen substitution device, 168 g (1) 0.0 equivalent), 36 g (0.5 equivalent) of acrylic acid, 0.5 g of triphenylphosphine, and 0.15 g of hydroquinone, and the mixture is stirred at 100 ° C. for 7 hours, and has a glycidyl group and an ethylenically unsaturated group in the molecule. Compound (D-3) was obtained, and (D-3) was titrated with an ethanol solution of potassium hydroxide to confirm that the acid value was 0.3 KOH mg / g or less (5% weight loss temperature: 300). ℃, epoxy group number: about 1, (meth) acryl group number: about 1)

Example 1
<Preparation of adhesive composition>
First, in cyclohexanone, 100 parts by mass of “HTR-860P-3” (trade name, manufactured by Nagase ChemteX Corp., glycidyl group-containing acrylic rubber, weight average molecular weight 800,000, Tg−7 ° C.) as component (A), B) “1032-H60” (manufactured by Japan Epoxy Resin Co., Ltd., trade name, high-purity special polyfunctional epoxy resin, epoxy equivalent 169) 150 parts by mass, (C) component “DPN-L” (Nipponization) Product name, dicyclopentadiene skeleton phenol resin, hydroxyl equivalent 169) 150 parts by mass, (D-1) 15 parts by mass as component (D-1), “Irg-184” (Ciba) as component (E) Specialty Chemicals Co., Ltd., trade name) 1.5 parts by mass, (2) PZ-CN (Shikoku Kasei Co., Ltd., trade name, imidazole compound) as component (F) By adding 3 parts by mass and 15 parts by mass of “A-DPH” (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name, dipentaerythritol hexaacrylate) as component (G), stirring and mixing, and further vacuum degassing An adhesive varnish was obtained.

<Preparation of adhesive sheet for connecting circuit members>
Thickness after drying the obtained adhesive varnish on a surface release-treated polyethylene terephthalate which is a protective film (Teijin DuPont Films, trade name “Teijin Tetron Film A-31”, thickness 50 μm) It apply | coated so that it might become 30 micrometers, and it heat-dried at 100 degreeC for 30 minute (s), and formed the adhesive layer. Next, a protective film, an adhesive layer, and a supporting base material are laminated on the adhesive layer by laminating a supporting base material (soft polyolefin film, manufactured by Ron Seal Co., Ltd., trade name “POF-120A”, thickness 100 μm). An adhesive sheet for connecting circuit members was obtained.

(Example 2)
In the preparation of the adhesive varnish, as component (B), 50 parts by mass of “1032-H60”, “HP-4032D” (manufactured by DIC Corporation, trade name) 45 parts by mass, “NC-3000” (Nipponization) Yakuhin Chemical Co., Ltd., trade name: 85 parts by mass and “YDF-8170C” (manufactured by Tohto Kasei Co., Ltd., trade name): 15 parts by mass, as component (C) “MEH-7500” (Maywa Kasei Co., Ltd.) , Product name) Except that 105 parts by mass was used, a pressure-sensitive adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1.

(Example 3)
In the preparation of the varnish of Example 1, "1032-H60" 80 parts by mass and "HP-4032D" 65 parts by mass as component (B), "DPN-L" 155 parts by mass as component (C), and component (F) As in Example 1, except that 1.5 parts by mass of “2PZ-CN” was used, an adhesive sheet for connecting circuit members was obtained.

Example 4
In preparation of the varnish of Example 1, the adhesive member sheet for a circuit member connection was obtained like Example 1 except having used 15 mass parts of (D-2) as (D) component.

(Example 5)
In preparation of the varnish of Example 1, the adhesive agent sheet for circuit member connection was obtained like Example 1 except having used 15 mass parts of (D-3) as (D) component.

(Comparative Example 1)
In the preparation of the varnish of Example 1, 30 parts by weight of “A-DPH” was used as the component (G) and the adhesive for circuit member connection was performed in the same manner as in Example 1 except that the component (D) was not blended. An adhesive sheet was obtained.

(Comparative Example 2)
In the preparation of the varnish of Example 1, 250 parts by mass of “1032-H60” as component (B), 250 parts by mass of “DPN-L” as component (C), and (D) component was not blended In the same manner as Example 1, an adhesive sheet for connecting circuit members was obtained.

(Comparative Example 3)
In the varnish adjustment in Example 2, 30 parts by mass of “A-DPH” was used as the component (G), and the adhesive for circuit member connection was performed in the same manner as in Example 1 except that the component (D) was not blended. An agent sheet was obtained.

(Comparative Example 4)
In the preparation of the varnish of Example 1, 75 parts by weight of “1032-H60” as component (B), 75 parts by weight of “DPN-L” as component (C), and (D) component was not blended In the same manner as Example 1, an adhesive sheet for connecting circuit members was obtained.

(Comparative Example 5)
In preparation of the varnish of Example 1, the adhesive member sheet for circuit member connection was obtained like Example 1 except not adding (C) component.

(Comparative Example 6)
In preparation of the varnish of Example 1, the adhesive member sheet for circuit member connection was obtained like Example 1 except not having mix | blended (D) component and (G) component.

[Evaluation of adhesive sheet for connecting circuit members]
The adhesive sheet for connecting circuit members obtained in the above Examples and Comparative Examples was evaluated as follows. The results are shown in Tables 1 and 2.

<Measurement of adhesive strength>
After laminating the adhesive sheet of the example and the comparative example on the SiO ₂ surface of a 6.5 mm × 6.5 mm semiconductor chip at 60 to 80 ° C., irradiance: 20 mW / cm ² irradiation amount: 500 mJ ultraviolet irradiation Then, a semiconductor chip with an adhesive sheet for connecting circuit members is flip-chip bonded to an organic substrate (PSR-4000, SR-AUS5, 0.2 mmt) at 250 ° C.-0.5 MPa-10 seconds for 175 ° C. An evaluation sample was obtained after post-curing for 2 hours. The evaluation sample was held on a hot plate at 265 ° C. for 30 seconds, and then the shear adhesive strength between the chip and the organic substrate was measured.
A: Shear bond strength is 1.0 MPa or more B: Shear bond strength is less than 1.0 MPa

<Elastic modulus measurement>
The adhesive layers in the adhesive sheets of Examples and Comparative Examples were cut into sizes having a length of 20 mm, a width of 4 mm, and a thickness of 30 μm, respectively, and a product name “DVE-V4” manufactured by Rheology Co., Ltd. was used. The elastic modulus was measured under the conditions.
Measurement temperature: −40 ° C. to 270 ° C.
Temperature increase rate: 5 ° C / min,
Measurement mode: tension mode,
Frequency: 10Hz

<Measurement of linear expansion coefficient>
After curing the adhesive sheets of Examples and Comparative Examples at 175 ° C. for 5 hours, the cured adhesive layers were cut into sizes of 30 mm in length, 2 mm in width, and 30 μm in thickness, respectively, manufactured by Seiko Instruments Inc. Using the trade name “TMA / SS6100”, the linear expansion coefficient was measured under the following conditions.
Measurement temperature: 20 ° C. to 300 ° C.
Temperature increase rate: 5 ° C / min,
Measurement mode: Tensile mode Between chucks: 20 mm
Load condition: 0.5 MPa relative to the cross-sectional area

<Reflow resistance evaluation>
The reflow resistance of the adhesive sheets of Examples and Comparative Examples was evaluated by the following procedure. First, the adhesive sheet was cut to a size of 10 cm square, the protective film was peeled off, and then applied to a chip (10 mm square, thickness 280 μm) with gold wire bumps (leveled, bump height 30 μm, 184 bumps) at 60-80 ° C. After laminating, an ultraviolet irradiation was performed at an illuminance of 20 mW / cm ² and an irradiation amount of 500 mJ, and the support base material was peeled off to obtain a semiconductor chip with an adhesive layer. Thereafter, a semiconductor chip with an adhesive layer was heated on a Ni / Au plated Cu circuit printed circuit board coated with a resist “SR-AUS308” (trade name, manufactured by Taiyo Ink Manufacturing Co., Ltd.) on the surface at a heating temperature of 250 ° C. and a load of 0 A sample of a semiconductor device was manufactured by pressure bonding for 10 seconds under a condition of 5 MPa. Next, this sample was molded into a predetermined shape using a sealant (trade name “CEL-9700-HF10” manufactured by Hitachi Chemical Co., Ltd.) and cured at 175 ° C. for 5 hours to obtain a package. Next, after storing the package for 7 days under the condition of 85 ° C./60% RH, the package is passed through an IR reflow furnace set to be held at a temperature at which the maximum surface temperature of the package becomes 260 ° C. for 20 seconds. The cracks in the package were inspected visually and with an ultrasonic microscope. The reflow resistance was evaluated based on the crack generation rate for 10 packages at this time.
A: Crack generation rate of less than 20% B: Crack generation rate of 20% or more

<TCT resistance evaluation>
The package after IR reflow was left in a temperature cycle tester (conditions: -55 ° C 30 minutes / room temperature 5 minutes / 125 ° C 30 minutes), and the connection resistance in the tester was measured. The number of cycles in which the connection resistance of the package exceeded 50Ω was evaluated as NG, and the average value of the five NGs was evaluated as the number of TCT resistance cycles of the film.
A: The average value of NG is 500 cycles or more. B: The average value of NG is less than 500 cycles.

  DESCRIPTION OF SYMBOLS 1 ... Protective film, 2 ... Adhesive agent layer, 3 ... Support base material, 4 ... Grinder, 5 ... Dicing tape, 6 ... Dicing saw, 7 ... Suction collet, 8 ... Support member for semiconductor element mounting, 10 ... Circuit Adhesive sheet for connecting members, 12 ... Semiconductor element with film adhesive, 20 ... Circuit electrode, 30 ... Semiconductor device, A ... Semiconductor wafer, B ... Radiation.

Claims (4)

(A) a high molecular weight component having a weight average molecular weight of 100,000 or more;
(B) an epoxy resin;
(C) an epoxy resin curing agent;
(D) a compound having a glycidyl group and an ethylenically unsaturated group;
(E) a photoinitiator;
An adhesive composition comprising:
The high molecular weight component is at least one selected from the group consisting of a glycidyl group-containing (meth) acrylic copolymer and a glycidyl group-containing acrylic rubber,
A semiconductor wafer having a plurality of circuit electrodes on one of its main surfaces is prepared, and the adhesive sheet for connecting a circuit member containing the adhesive composition on the side of the semiconductor wafer on which the circuit electrodes are provided The adhesive layer is pasted, and the semiconductor wafer is thinned by grinding the side opposite to the side on which the circuit electrodes are provided, and used to adhere to a semiconductor element mounting support member. , Adhesive composition.   (F) The adhesive composition of Claim 1 which further contains a hardening accelerator.   An adhesive for circuit member connection, comprising: a light-transmissive support base; and an adhesive layer provided on the support base and made of the adhesive composition according to claim 1 or 2. Agent sheet. A semiconductor wafer having a plurality of circuit electrodes on one of its main surfaces is prepared, and the adhesive bonding of the adhesive sheet for connecting circuit members according to claim 3 is provided on the side of the semiconductor wafer on which the circuit electrodes are provided. A step of applying the agent layer;
Grinding the opposite side of the semiconductor wafer from the side where the circuit electrodes are provided to thin the semiconductor wafer;
Irradiating the adhesive layer with radiation;
Dicing the thinned semiconductor wafer and the adhesive layer irradiated with the radiation into individual semiconductor elements with a film adhesive, and
Bonding the semiconductor element with a film adhesive and a supporting member for mounting a semiconductor element via the film adhesive of the semiconductor element with a film adhesive; and
A method for manufacturing a semiconductor device.

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