JP5691167B2 - Method for manufacturing light emitting device - Google Patents

Description

The present invention relates to a method of manufacturing a light emission device.

  In recent years, as a next-generation display device following a liquid crystal display (LCD), a light-emitting element type panel in which self-light-emitting elements such as organic electroluminescence elements (hereinafter abbreviated as “organic EL elements”) are two-dimensionally arranged Research and development of display devices equipped with them is underway. Such a display device is also used as a light emitting device.

  The organic EL element includes an anode electrode, a cathode electrode, and an organic EL layer (light emitting functional layer) formed between the pair of electrodes and having, for example, a light emitting layer, a hole injection layer, and the like. The organic EL element emits light by energy generated by recombination of holes and electrons in the light emitting layer. In a display device using a plurality of organic EL elements, a current control unit is provided for each organic EL element. As the current control means, a thin film transistor is generally used.

  In a currently widely used manufacturing method, a wiring for applying a voltage to each organic EL element is formed on a substrate by a known film forming process (see, for example, Patent Document 1). In the case of a light emitting device in which organic EL elements are two-dimensionally arranged, each organic EL element arranged in the same row is formed so as to be electrically connected to the same wiring.

  In the light-emitting device obtained by the above method, each wiring has a relatively large electric resistance because the thickness of each wiring is small. For this reason, a voltage drop occurs, and the voltage applied to each organic EL element differs depending on the position where the organic EL element and the wiring are connected. This difference makes the luminance of the light emitting device non-uniform. Further, when this light emitting device is used as a display device, the display quality is deteriorated. These problems make it difficult to increase the size of light-emitting devices and display devices using organic EL elements.

  Patent Document 2 describes at least one of a transparent electrode and a back electrode facing each other with a light-emitting layer interposed therebetween, in an organic EL element including a light-emitting portion including a light-emitting layer, a transparent electrode, and a back electrode, and a sealing member covering the light-emitting portion. One of them discloses an organic EL element that is electrically connected to circuit patterns formed on both surfaces of a sealing member. The circuit pattern formed on both surfaces of the sealing member is electrically connected to the transparent electrode or the back electrode through a side conductor disposed on the side surface of the sealing member or a through hole formed in the sealing member. The current is supplied to each organic EL element through the circuit pattern.

JP-A-8-330600 Japanese Patent Laid-Open No. 11-224774

  The configuration disclosed in Patent Document 2 is for the purpose of simplifying the wiring pattern and increasing the density of the arrangement of the organic EL elements, and aims to make the luminance of the light emitting device uniform and improve the display quality of the display device. It is not what I did. Also in this configuration, since the circuit pattern formed on the sealing member is made of a thin film, the wiring for supplying a current to each organic EL element has a large electric resistance. In other words, the configuration disclosed in Patent Document 2 cannot solve the problems of uniform brightness of the light emitting device and improvement of display quality of the display device.

The present invention has been made in view of the above, and aims the influence of the electric resistance of the wiring small, to provide a method of manufacturing a light emitting equipment uniformity of luminance is improved.

A method for manufacturing a light emitting device according to a first aspect of the present invention includes:
A method for manufacturing a light emitting device comprising a plurality of thin film transistors and a plurality of light emitting elements arranged on one surface of a substrate,
Forming a gate electrode and a first contact electrode of the thin film transistor on one surface of the substrate simultaneously with the same material ;
Forming an insulating layer on one surface of the substrate so as to cover the first contact electrode and the gate electrode;
On the insulating layer, a second contact electrode that is electrically connected to the first contact electrode through the insulating layer and a source electrode and a drain electrode of the thin film transistor are simultaneously formed using the same material. Process,
A plurality of pixel electrodes spaced from each other at a position that does not overlap with the first contact electrode of one surface of the substrate, and a third contact electrode electrically connected to the second contact electrode, the same material Forming at the same time ,
Forming a partition wall in a region including on the third contact electrode between the pixel electrodes, and forming an opening exposing at least a part of the third contact electrode in the partition wall;
Forming a through-hole from the other surface of the substrate to expose a part of the surface of the third contact electrode in contact with one surface of the substrate;
Disposing a conductive material in the through hole;
Arranging a conductor layer on the other surface of the substrate, and electrically connecting the third contact electrode and the conductor layer via the conductive material;
Forming a light emitting layer on the pixel electrode;
Forming a counter electrode on the light emitting layer and covering the partition, and electrically connecting the counter electrode to the third contact electrode in the opening;
It is characterized by providing.

  The conductor layer may include a metal plate.

  Preferably, the metal plate is made of aluminum, copper, an aluminum or copper alloy, or Kovar.

Preferably, the conductive material is a paste-like material having thermosetting property and conductivity,
The substrate and the conductor layer are bonded together by heat-curing the conductive material.

  Preferably, the through hole is formed by laser processing.

A method for manufacturing a light emitting device according to a second aspect of the present invention includes:
A method of manufacturing a light emitting device comprising a plurality of thin film transistors and a plurality of light emitting elements arranged on the other surface of the substrate,
Forming a first conductor layer on one surface of the substrate;
Forming a second conductor layer on the other surface of the substrate, and forming a power line for supplying current to the light emitting element by the second conductor layer;
Forming a first insulating layer on the second conductor layer;
On the first insulating layer, said first insulating layer, the second conductive layer and the first contact electrode through said substrate being the first conductive layer and electrically connected to the first Forming a second contact electrode that is electrically connected to the power supply line of the second conductor layer through an insulating layer and a gate electrode of the thin film transistor simultaneously with the same material;
Forming a second insulating layer on the first insulating layer so as to cover the first contact electrode, the second contact electrode, and the gate electrode;
A third contact electrode that is electrically connected to the first contact electrode through the second insulating layer on the second insulating layer, and the second contact through the second insulating layer. Forming a fourth contact electrode electrically connected to the electrode and a source electrode and a drain electrode of the thin film transistor simultaneously with the same material;
A plurality of pixel electrodes spaced apart from each other at positions not overlapping the first contact electrode , the second contact electrode, the third contact electrode, and the fourth contact electrode, and electrically connected to the third contact electrode Forming a fifth contact electrode connected to the same material at the same time ;
A first barrier rib is formed in a region including the upper portion of the fifth contact electrode between the pixel electrodes, a second barrier rib is formed in a region including the upper portion of the fourth contact electrode, and the first barrier rib includes the first barrier rib. Forming an opening exposing at least a portion of the fifth contact electrode;
Forming a light emitting layer on the pixel electrode;
Forming a counter electrode so as to cover the light emitting layer and the first barrier rib and the second barrier rib, and electrically connecting the counter electrode with the fifth contact electrode in the opening;
It is characterized by providing.

A method for manufacturing a light emitting device according to the first and second aspects of the present invention includes:
Further comprising forming a hole injection layer on the pixel electrode;
The light emitting layer may be formed on the hole injection layer.

The method further comprises a step of forming an interlayer on the hole injection layer,
The light emitting layer may be formed on the interlayer layer.

According to the method of manufacturing the light emitting equipment of the present invention, a small influence of the electrical resistance of the wiring, it is possible to provide an electronic apparatus using the light emitting device and this uniformity of luminance is improved.

(A) And (b) is a figure which shows the electronic device with which a light-emitting device is used. It is a figure which shows the electronic device with which a light-emitting device is used. It is a figure which shows the electronic device with which a light-emitting device is used. It is a figure which shows the circuit structure of the light-emitting device which concerns on 1st Embodiment of this invention. FIG. 3 is an equivalent circuit diagram of an example of a pixel drive circuit of the light emitting device according to the first embodiment of the present invention. It is a partial top view which shows the structure of the pixel of the light-emitting device which concerns on 1st Embodiment of this invention. FIG. 7 is a cross-sectional view taken along line A-A ′ of the light emitting device illustrated in FIG. 6. (A)-(e) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 1st Embodiment of this invention. (A)-(c) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 1st Embodiment of this invention. (A)-(c) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 1st Embodiment of this invention. (A), (b) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 1st Embodiment of this invention. (A)-(c) is a figure which shows the modification of the structure of a via part in the light-emitting device which concerns on 1st Embodiment of this invention. It is a fragmentary top view which shows the structure of the pixel of the light-emitting device which concerns on 2nd Embodiment of this invention. FIG. 14 is a cross-sectional view taken along line B-B ′ of the light emitting device illustrated in FIG. 13. (A)-(d) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 2nd Embodiment of this invention. (A)-(c) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 2nd Embodiment of this invention. (A), (b) is a figure for demonstrating the manufacturing method of the light-emitting device which concerns on 2nd Embodiment of this invention. It is a schematic diagram which shows the planar structure of the light-emitting device which concerns on 3rd Embodiment of this invention. It is a figure which shows the circuit structure of the light-emitting device which concerns on 3rd Embodiment of this invention. It is an equivalent circuit diagram of an example of the drive circuit of the pixel of the light-emitting device concerning 3rd Embodiment of this invention. It is a figure for demonstrating operation | movement of the light-emitting device which concerns on 3rd Embodiment of this invention. It is a modification of the light-emitting device which concerns on 1st Embodiment of this invention, Comprising: It is a figure which shows the state which the metal plate and the drain electrode of the drive transistor were electrically connected in the exterior of a board | substrate. FIG. 6 is a modification of the light emitting device according to the second embodiment of the present invention, and shows a state in which two conductor layers are electrically connected to the counter electrode and the drain electrode of the driving transistor, respectively, outside the substrate.

  Hereinafter, a light emitting device according to an embodiment of the present invention, an electronic apparatus using the same, and a method for manufacturing the light emitting device will be described with reference to the drawings. In the present embodiment, an active drive type light emitting device using a top emission type organic EL (electroluminescence) element will be described as an example. The top emission type organic EL element has a structure in which light from the organic EL element is emitted to the outside through a counter electrode, in other words, from a direction opposite to the substrate on which the organic EL element is formed. Note that the light-emitting device of this embodiment is also used as a display device.

(First embodiment)
The light emitting device 10 according to the first embodiment of the present invention is incorporated in an electronic device such as a digital camera as shown in FIG. 1, a computer as shown in FIG. 2, or a mobile phone as shown in FIG.

  As shown in FIGS. 1A and 1B, the digital camera 1200 includes a lens unit 1201, an operation unit 1202, a display unit 1203, and a viewfinder 1204. The light emitting device 10 is used for the display unit 1203.

  A computer 1210 illustrated in FIG. 2 includes a display unit 1211 and an operation unit 1212. The light emitting device 10 is used for the display portion 1211.

  A cellular phone 1220 illustrated in FIG. 3 includes a display unit 1221, an operation unit 1222, a reception unit 1223, and a transmission unit 1224. The light emitting device 10 is used for the display portion 1221.

  As shown in FIG. 4, the light emitting device 10 includes a TFT panel 11, a display signal generation circuit 12, a system controller 13, a select driver 14, an anode driver 15, and a data driver 16. The

  The TFT panel 11 includes a plurality of pixel circuits 11 (i, j) (i = 1 to m, j = 1 to n, m, n; natural numbers).

  Each pixel circuit 11 (i, j) is a display pixel corresponding to one pixel of the image, and is arranged in a matrix. As shown in FIG. 5, each pixel circuit 11 (i, j) includes a light emitting element (organic EL element) 30, transistors T11 and T12, and a capacitor Cs. Here, the transistors T11 and T12 and the capacitor Cs form a pixel drive circuit DC.

  The organic EL element 30 is a current-controlled light-emitting element (display element) that emits light by utilizing a phenomenon in which light is emitted by excitons generated by recombination of electrons and holes injected into an organic compound. It emits light with a luminance corresponding to the current value of the current.

  Transistors T11 and T12 in the pixel drive circuit DC are TFTs (Thin Film Transistors) constituted by n-channel FETs (Field Effect Transistors).

  The transistor T <b> 12 is a driving transistor for the organic EL element 30, and has a drain connected to the anode line La (j) and a source connected to the anode terminal of the organic EL element 30.

  The transistor T11 is a transistor that functions as a switch for selecting the organic EL element 30, and its drain is connected to the data line Ld (i), its source is connected to the gate of the transistor T12, and its gate is the select line Ls (j). Connected to.

  The capacitor Cs is for holding the voltage between the gate and the source of the transistor T12, and is connected between the gate and the source of the transistor T12.

In the case of three colors of red (R), blue (B), and green (G), the light emitting device 10 includes such a pixel circuit 11 (i, j) for each color.
Further, the pixel circuit 11 (i, j) may include three transistors.

  For example, the display signal generation circuit 12 is supplied with a video signal Image such as a composite video signal and a component video signal from the outside, and acquires display data Pic and a synchronization signal Sync such as a luminance signal from the supplied video signal Image. Is. The display signal generation circuit 12 supplies the acquired display data Pic and synchronization signal Sync to the system controller 13.

  The system controller 13 controls the correction processing, writing operation, and light emission operation of the display data Pic based on the display data Pic and the synchronization signal Sync supplied from the display signal generation circuit 12.

  The display data Pic correction processing is based on the display data Pic supplied from the display signal generation circuit 12 based on the threshold voltage Vth and the current amplification factor β of the drive transistor (transistor T12) of each pixel circuit 11 (i, j). Is a process of generating a corrected gradation signal.

  The writing operation is an operation of writing a voltage corresponding to the gradation signal generated in the capacitor Cs of each pixel circuit 11 (i, j), and the light emitting operation is a current corresponding to the voltage held in the capacitor Cs. Is supplied to the organic EL element 30 to cause the organic EL element 30 to emit light.

  In order to perform such control, the system controller 13 generates various control signals and supplies them to the select driver 14, the anode driver 15, and the data driver 16, and supplies the generated gradation signal to the data driver 16.

  The select driver 14 is a driver that sequentially selects rows of the TFT panel 11, and is configured by, for example, a shift register. The select driver 14 is connected to the gates of the transistors T11 and T12 of each pixel circuit 11 (i, j) via a select line Ls (j) (j = 1 to n).

  Based on the control signal supplied from the system controller 13, the select driver 14 sequentially selects the pixel circuits 11 (1,1) to 11 (m, 1),. By outputting the Hi level select signal Vselect (j) to the pixel circuits 11 (1, n) to 11 (m, n), the rows of the TFT panel 11 are sequentially selected.

  The anode driver 15 is a driver that outputs signals Vsource (1) to Vsource (n) of the voltage VL or VH to the anode lines La (1) to La (n), respectively. The anode driver 15 is connected to the drain of the transistor T12 of each pixel circuit 11 (i, j) via an anode line La (j) (j = 1 to n).

  The data driver 16 is a driver that applies the voltage signals Sv (1) to Sv (m) to the data lines Ld (1) to Ld (m) based on the gradation signal supplied from the system controller 13.

  Note that the light-emitting device 10 is not limited to a configuration in which an even number of light-emitting elements are fixed and used as a set of pixels, and a configuration in which one light-emitting element is shared among a plurality of logical pixels is also possible.

  For example, one light emitting element is used to form five types of logic pixels. Specifically, one light emitting element is used as the center of a logical pixel, and the rest is used as a part of a logical pixel centered on a peripheral pixel. In this way, by using one light emitting element a plurality of times, the resolution can be increased more than the configuration in which a set of pixels is fixed to emit light.

  Next, a specific structure of the light emitting device 10 will be described with reference to FIGS. 6 is an enlarged partial plan view showing one of the plurality of pixels 100 provided in the light emitting device 10, and FIG. 7 is a sectional view taken along line A-A '.

  As shown in FIG. 6, the pixel 100 includes a selection transistor T11 and a drive transistor T12. The drain electrode T11d of the selection transistor T11 is electrically connected to the data line Ld at the connection portion 61.

  Contact holes 62 and 63 are formed in the gate insulating film 32 (described later) between the select line Ls and both ends of the gate electrode T11g of the select transistor T11. The select line Ls and the gate electrode T11g are electrically connected through the contact holes 62 and 63.

  A contact hole 64 is formed in the gate insulating film 32 between the source electrode T11s of the selection transistor T11 and the gate electrode T12g of the drive transistor T12. The source electrode T11s and the gate electrode T12g are electrically connected through the contact hole 64.

  Next, description will be made with reference to cross-sectional views. As shown in FIG. 7, the pixel 100 includes a metal plate 50, a substrate 31, a gate insulating film 32, a light emitting unit 40, an interlayer insulating film 47, a partition wall 48, and a common electrode contact 70.

  A gate electrode T12g and a contact electrode 70a are formed on one surface of the substrate 31. A through hole 85 is formed at a position of the substrate 31 where the contact electrode 70a is formed. A conductive paste 51 is applied to the other surface of the substrate 31. The conductive paste 51 is also filled in the through hole 85.

  The metal plate 50 is bonded to the substrate 31 via a layer of conductive paste 51. A predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied to the metal plate 50. As shown in FIG. 7, the metal plate 50 is electrically connected to the counter electrode 46 outside the substrate 31.

  The gate insulating film 32 is formed from an insulating material, such as a silicon oxide film or a silicon nitride film. The gate insulating film 32 is formed on the substrate 31 so as to cover the gate electrode T12g and the contact electrode 70a. On the gate insulating film 32, the data line Ld, the components of the driving transistor T12 other than the gate electrode T12g, and the contact electrode 70b are formed.

  The interlayer insulating film 47 is made of an insulating material such as a silicon nitride film. The interlayer insulating film 47 is formed between the pixel electrodes 42 and insulates and protects the transistors T11 and T12, the select line Ls, and the anode line La. A substantially square opening is formed in the interlayer insulating film 47, and a light emitting region of the light emitting element 30 is defined by the opening. Further, in the partition wall 48 on the interlayer insulating film 47, groove-like openings extending in the column direction (vertical direction in FIG. 6) are formed over the plurality of light emitting elements 30. On the interlayer insulating film 47, a contact electrode 70c, a partition wall 48, and a light emitting unit 40 are formed.

  The partition wall 48 is made of an insulating material, such as a cured resin such as polyimide, and is formed on the interlayer insulating film 47. The partitions 48 are formed in a stripe shape so as to open the pixel electrodes 42 of a plurality of light emitting pixels along the column direction. The planar shape of the partition wall 48 is not limited to this, and may be a lattice shape having an opening for each pixel electrode 42.

  The light emitting unit 40 includes a pixel electrode 42, a light emitting layer 45, and a counter electrode 46. The pixel electrode 42 is made of a light-transmitting conductive material, for example, ITO (Indium Tin Oxide), ZnO, or the like. Each pixel electrode 42 is insulated from the pixel electrode 42 of another adjacent light emitting element 30 by an interlayer insulating film 47.

  The light emitting layer 45 is formed on the pixel electrode 42. The light emitting layer 45 has a function of generating light when a voltage is applied between the pixel electrode 42 and the counter electrode 46. The light emitting layer 45 is made of a known polymer light emitting material capable of emitting fluorescence or phosphorescence, for example, a light emitting material containing a conjugated double bond polymer such as polyparaphenylene vinylene or polyfluorene. In addition, these luminescent materials are appropriately coated with a solution (dispersion) dissolved (or dispersed) in an aqueous solvent or an organic solvent such as tetralin, tetramethylbenzene, mesitylene, and xylene by a nozzle coating method, an inkjet method, or the like. It is formed by volatilizing.

  In the present embodiment, a configuration including only a light emitting layer as an EL layer contributing to light emission is given as an example. However, the present invention is not limited thereto, and the EL layer may include a hole injection layer and a light emitting layer, or You may provide a positive hole injection layer, an interlayer, and a light emitting layer. When the hole injection layer is provided, the hole injection layer is provided between the pixel electrode 42 and the light emitting layer 45. The hole injection layer has a function of supplying holes to the light emitting layer 45. The hole injection layer is composed of an organic polymer material that can inject and transport holes, for example, polyethylenedioxythiophene (PEDOT) as a conductive polymer and polystyrene sulfonic acid (PSS) as a dopant. .

  Further, when an interlayer is provided, the interlayer is provided between the hole injection layer and the light emitting layer 45. The interlayer has a function of suppressing the hole injection property of the hole injection layer to facilitate recombination of electrons and holes in the light emitting layer 45, and increases the light emission efficiency of the light emitting layer 45.

  The counter electrode 46 is formed so as to cover the entire pixel 100 including the partition wall 48 and the contact electrode 70c. The counter electrode 46 is formed of a single electrode layer with respect to the plurality of pixels 100 arranged in two dimensions. When the light emitting element 30 is a top emission type, the counter electrode 46 has a light transmissive low work function layer made of a material having a very thin film thickness of about 10 nm, for example, Li, Mg, Ca, Ba, etc. And a light-reflective conductor layer such as ITO having a thickness of about 100 nm to 200 nm.

  The common electrode contact 70 includes a through hole 85 and contact electrodes 70a, 70b, and 70c. The through-hole 85 is filled with the conductive paste 51. The common electrode contact 70 penetrates the substrate 31, the gate insulating film 32 and the interlayer insulating film 47, and makes the counter electrode 46 and the metal plate 50 conductive.

  The operation of the light emitting device 10 will be described. The light emitting device 10 emits light when a voltage is applied between the pixel electrode 42 and the counter electrode 46 facing each other with the light emitting layer 45 interposed therebetween. As described above, the counter electrode 46 is a thin film including a light transmissive low work function layer having a thickness of about 10 nm and a light transmissive conductor layer having a thickness of about 100 nm to 200 nm. Since the counter electrode 46 has a relatively large electric resistance, when it is connected to a predetermined low voltage (reference voltage Vss, for example, ground potential GND) only outside the substrate 31, a potential difference is generated in the counter electrode 46 due to a voltage drop. Occurs. As a result, the potential difference between the pixel electrode 42 and the counter electrode 46 may vary depending on the position of the pixel 100. This difference impairs the luminance uniformity of the light emitting device 10.

  Here, as shown in FIG. 7, in the light emitting device 10, the counter electrode 46 is electrically connected to the metal plate 50 through the common electrode contact 70. A predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied to the metal plate 50. Further, the metal plate 50 and the counter electrode 46 are electrically connected also outside the substrate 31.

  The metal plate 50 has a thickness of about 0.1 mm, and its electric resistance is much smaller than that of the electrode layer forming the counter electrode 46. By electrically connecting the counter electrode 46 and the metal plate 50 to the outside of the substrate 31 and conducting the counter electrode 46 and the metal plate 50 through the common electrode contact 70, a voltage caused by the electric resistance of the counter electrode 46 is obtained. The effects of descent can be minimized. As a result, the luminance uniformity of the light emitting device 10 is improved. The thickness of the metal plate 50 is preferably in the range of 1 μm to 0.5 mm.

  Further, since the metal plate 50 is in close contact with the substrate 31 in the light emitting device 10, the temperature distribution of the light emitting device 10 is made uniform and the heat dissipation efficiency is improved. As a result, the resistance value of each transistor and the light emission efficiency of the light emitting element 30 are maintained, and the luminance uniformity of the light emitting device 10 is improved. Furthermore, deterioration of the light emitting element 30 due to heat is suppressed.

  Next, a method for manufacturing the light emitting device 10 will be described with reference to FIGS. Here, since the selection transistor T11 is formed in the same process as the driving transistor T12, a part of the description of the formation of the selection transistor T11 is omitted.

  First, a substrate 31 made of a glass substrate or the like is prepared. Next, a gate made of, for example, a Mo film, a Cr film, an Al film, a Cr / Al laminated film, an AlTi alloy film or an AlNdTi alloy film, or a MoNb alloy film is formed on the substrate 31 by sputtering, vacuum deposition, or the like. A conductive film is formed.

  Next, as shown in FIG. 8A, this gate conductive film is patterned into the shape of the gate electrode T12g and the contact electrode 70a of the drive transistor T12. At this time, although not shown, the gate electrode T11g of the selection transistor T11 is also formed. Subsequently, a gate insulating film 32 is formed on the gate electrode T12g by a CVD (Chemical Vapor Deposition) method or the like. At this time, as shown in FIG. 8B, an opening is provided on the contact electrode 70a.

  Next, a semiconductor layer is formed on the gate insulating film 32 by CVD or the like. This semiconductor layer may be a single layer or may be composed of a plurality of different types of semiconductor layers. An insulating film made of, for example, SiN is formed on the semiconductor layer by a CVD method or the like. Subsequently, this insulating film is patterned by photolithography or the like to form a stopper film 115. Further, a film made of amorphous silicon or the like containing n-type impurities is formed on the semiconductor layer and the stopper film 115 by a CVD method or the like. This film and the semiconductor layer are patterned by photolithography or the like to form the semiconductor layer 114 and the ohmic contact layer 116 as shown in FIG.

  Next, contact holes 62 to 64 (not shown) which are through holes are formed in the gate insulating film 32. These correspond to the contact holes 62 to 64 shown in FIG. Subsequently, a source-drain conductive film made of, for example, a Mo film, a Cr film, an Al film, a Cr / Al laminated film, an AlTi alloy film or an AlNdTi alloy film, an AlNi alloy film, or a MoNb alloy film is formed by sputtering or vacuum. The film is formed by vapor deposition or the like. The source-drain conductive film is patterned by photolithography to form the data line Ld, the source electrode T12s of the driving transistor T12, and the drain electrode T12d as shown in FIG. 8C. At this time, although not shown, the anode line La shown in FIG. 6 is also formed.

  Next, an interlayer insulating film 47 made of a silicon nitride film is formed by CVD or the like so as to cover the drive transistor T12 and the like. The interlayer insulating film 47 is patterned by photolithography, and openings are formed on the contact electrode 70b and the source electrode T12s of T12 as shown in FIG. 8D.

  Next, a transparent conductive film such as ITO or a light-reflective conductive film and a transparent conductive film such as ITO are formed on the interlayer insulating film 47 by sputtering, vacuum deposition, or the like. This conductive film is patterned by photolithography to form the pixel electrode 42 and the contact electrode 70c as shown in FIG. At this time, a part of the pixel electrode 42 is formed so as to overlap with the source electrode T12s of the driving transistor T12.

  Next, a photosensitive material such as photosensitive polyimide is applied so as to cover the interlayer insulating film 47. The applied photosensitive material is patterned by exposing and developing through a mask corresponding to the shape of the partition wall 48. Thus, as shown in FIG. 9A, a partition wall 48 having an opening is formed.

  Next, a resist 80 is formed so as to cover the substrate 31, the partition wall 48, the pixel electrode 42, and the contact electrode 70c. At this time, as shown in FIG. 9B, an opening is provided in a portion of the resist 80 that faces the contact electrode 70a across the substrate 31.

  Next, the substrate 31 is etched by a wet etching method using, for example, an etching solution containing hydrofluoric acid and sulfuric acid. The etching is stopped before the contact electrode 70a is exposed. The substrate 31 is washed with water and then etched by, for example, a dry etching method. As shown in FIG. 9C, a through hole 85 is formed and the contact electrode 70a is exposed.

Here, the through hole 85 is formed by an etching method, but the through hole 85 may be formed by a method such as laser processing. In this case, excimer laser or CO ₂ laser is preferable as the laser to be used. In particular, an ArF excimer laser having a short wavelength and high processing accuracy is preferable. When the through hole 85 is formed by laser processing, the contact electrode 70a preferably has a structure including the above layers provided with a material having a high reflectance with respect to the laser used on the substrate 31 side. For example, when an excimer laser is used, the contact electrode 70a is preferably a transparent conductive multilayer mirror in which a plurality of transparent conductive materials having different refractive indexes are laminated.

  Next, after the resist 80 is removed, a conductive paste 51 is applied to the substrate 31 as shown in FIG. The application is performed by a known method such as an ink jet printing method, a dispensing method, a printing method or the like. The conductive paste 51 may be applied to the entire substrate 31, or may be applied only to the inside and the periphery of the through hole 85. That is, the conductive paste 51 may be applied so that the metal plate 50 to be bonded next and the contact electrode 70a are electrically connected. As the conductive paste 51, for example, “Dotite (registered trademark)” series of Fujikura Kasei Co., Ltd., “ThreeBond (registered trademark) 3373” of ThreeBond Co., Ltd. and the like are preferably used, but not limited thereto.

  Next, as shown in FIG. 10B, the metal plate 50 is bonded to the substrate 31 through the conductive paste 51. The conductive paste 51 is heated and cured, for example, at 100 to 250 ° C. As a result, the metal plate 50 and the substrate 31 are fixed, and the metal plate 50 and the contact electrodes 70 a, 70 b and 70 c are electrically connected via the conductive paste 51. The metal plate 50 is preferably one that exhibits good conductivity, such as aluminum, copper, aluminum, or a copper alloy. When the substrate 31 is formed of glass, warpage of the substrate 31 in the heating process can be suppressed by using an alloy having a thermal expansion coefficient close to that of glass. An example of such an alloy is Kovar (an alloy of iron, nickel, and cobalt).

  Subsequently, a light emitting layer 45 is formed on the pixel electrode 42. Next, as shown in FIG. 10C, a layer made of a material having a low work function such as Li, Mg, Ca, Ba, etc. by vacuum deposition or sputtering on the substrate 31 on which the light emitting layer 45 is formed, A counter electrode 46 having a two-layer structure composed of a light-transmitting conductor layer such as ITO is formed. In this way, the pixel 100 is formed. A passivation film such as silicon nitride may be further formed on the counter electrode 46.

  Next, a sealing resin made of an ultraviolet curable resin or a thermosetting resin is applied on the substrate 31 outside the light emitting region where the plurality of light emitting elements 30 are formed. Then, a sealing substrate (not shown) and the substrate 31 are bonded together. Under the present circumstances, you may arrange | position the water absorbing agent containing a calcium oxide etc. in the space corresponding to each light emission area | region, for example. By disposing the water absorbing agent, the deterioration of the light emitting element 30 can be suppressed. The sealing resin is cured by ultraviolet rays or heat, and the substrate 31 and the sealing substrate are bonded. The light emitting device 10 is manufactured as described above.

  In the present embodiment, the process of bonding one metal plate 50 to one substrate 31 has been described in order to facilitate understanding of the invention. For example, as shown in FIG. A plurality of metal plates 50 may be bonded to the substrate 31. In this case, the substrate 31 to which the sealing substrate is bonded is cut along the scribe / break lines after the pixels 100 and the like are formed, and a plurality of light emitting devices 10 are obtained. Note that the scribe break line is indicated by a broken line in FIG.

  In this embodiment, an example in which one common electrode contact 70 is arranged for one pixel 100 is shown for easy understanding of the invention. However, the common electrode contact 70 is not necessarily provided for all pixels. On the other hand, it is not necessary to arrange them one by one. If the number of common electrode contacts 70 is too large, the aperture ratio of the light emitting device 10 may be reduced, and the overall luminance may be reduced. One common electrode contact 70 may be arranged for several pixels, or may be arranged at one place or several places of the light emitting device 10, for example. The number of common electrode contacts 70 to be formed and the place where they are arranged are selected according to the area of the light emitting device 10 and the electrical resistance of the counter electrode 46.

  In the present embodiment, the metal plate 50 and the counter electrode 46 are connected to the outside of the substrate 31 and the common electrode contact 70, and a predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied to each of them. However, the metal plate 50 and the anode line La may be connected, or as shown in FIG. 22, the metal plate 50 and the drain electrode T12d of the driving transistor T12 are connected and a predetermined high voltage Vdd is applied. It may be configured to be. Also in these modified examples, the metal plate 50 and the corresponding electrodes are always electrically connected even outside the substrate 31.

  In the present embodiment, the conductive paste 51 is applied directly to the inside of the through hole 85. However, it is sufficient that electrical connection between the metal plate 50 and the counter electrode 46 is ensured. Is not limited to this. For example, as shown in FIG. 12A or FIG. 12B, the via 52 may be formed by depositing or filling metal into the through hole 85 by a method such as sputtering. By doing in this way, it can prevent that the circuit and electrode which were formed on the board | substrate 31 by the pressure at the time of apply | coating the electrically conductive paste 51 are damaged. As a result, the defective product rate at the time of manufacture can be reduced and the reliability of the product can be increased.

  Furthermore, after the via 52 is formed, a protective film 53 made of, for example, silicon nitride may be formed as shown in FIG. In this case, it is preferable that the electrode for electrically connecting the metal plate 50 and the via 52 is formed in a portion not on the straight line of the through hole 85 as shown in FIG. By doing in this way, the penetration | invasion of the water | moisture content etc. from the through hole 85 can be prevented, and the reliability of a product can further be improved.

  The metal plate 50 may be assembled with heat exchange means such as a heat sink, a heat radiating fin, or a heat pipe. In this case, a heat conductive adhesive is preferably used for assembly.

(Second Embodiment)
Next, a light emitting device 20 according to a second embodiment of the present invention and a manufacturing method thereof will be described with reference to the drawings. The difference from the first embodiment is that the surface of the substrate 31 on which the circuit is formed (hereinafter referred to as the upper surface in the present embodiment. The surface on the opposite side is referred to as the lower surface, as shown in FIGS. The conductive layer 56 electrically connected to the anode line La through the power line contact 71 is disposed. Note that a description of portions common to the light emitting device 10 is omitted.

  In the present embodiment, the counter electrode 46 is electrically connected to the conductor layer 55 disposed on the lower surface of the substrate 31 on the outside of the substrate 31, and further electrically connected via the common electrode contact 70. In addition, the anode line La and the conductor layer 56 disposed on the upper surface of the substrate 31 are electrically connected outside the substrate 31 and further electrically connected via the power line contact 71. A predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied to the conductor layer 55, and a predetermined high voltage Vdd is applied to the conductor layer 56.

  In the present embodiment, the anode line La is electrically connected to the conductor layer 56 through the power line contact 71, so that the influence of the voltage drop due to the electrical resistance of the anode line La can be minimized. In addition, since the counter electrode 46 is electrically connected to the metal plate 50 through the common electrode contact 70, the influence of the voltage drop due to the electrical resistance of the counter electrode 46 can be minimized. As a result, the light emitting device 20 has improved brightness uniformity over the light emitting device 10.

  In the light emitting device 20, since the conductor layers 55 and 56 made of metal or the like are in close contact with the substrate 31, the temperature distribution of the light emitting device 20 is made uniform and the heat dissipation efficiency is improved. As a result, the resistance value of each transistor and the light emission efficiency of the light emitting element 30 are maintained, and the luminance uniformity of the light emitting device 20 is improved. Furthermore, deterioration of the light emitting element 30 due to heat is suppressed.

  Furthermore, since the conductor layers made of metal or the like are formed on both surfaces of the substrate 31, warpage of the substrate 31 due to heating due to the difference in thermal expansion coefficient between the substrate 31 and the conductor layer can be suppressed. As a result, the defective product rate can be reduced and the reliability of the product can be increased.

  A method for manufacturing the light emitting device 20 will be described with reference to the drawings. First, as shown in FIG. 15A, a substrate 31 having a conductor layer 56 formed on the upper surface and a conductor layer 55 formed on the lower surface with a thickness of 1 μm to 0.5 mm is prepared. As the substrate 31, glass or the like is preferably used. The conductor layers 55 and 56 may be formed by bonding a metal plate or a metal foil to the substrate 31 with an epoxy adhesive or the like, or may be formed on the surface of the substrate 31 by plating. From the viewpoint of preventing the substrate 31 from warping, the conductor layers 55 and 56 are preferably made of the same material and have the same thickness within a range of errors.

  As shown in FIG. 15B, the conductor layer 56 is patterned to form a through hole 86. Next, as shown in FIG. 15C, the planarizing film 33 is formed on the conductor layer 56. The planarizing film is formed so as to have openings 87a and 87b.

  Next, as shown in FIG. 15D, the substrate 31 is etched through the opening 87a to form a through hole 85.

  Subsequently, for example, a gate conductive film made of a Mo film, a Cr film, an Al film, a Cr / Al laminated film, an AlTi alloy film or an AlNdTi alloy film, an AlNi alloy film, or a MoNb alloy film is formed by a sputtering method, a vacuum evaporation method, or the like. Is formed. The gate conductive film is patterned by photolithography to form the gate electrode T12g and the contact electrodes 70a and 71a of the drive transistor T12 as shown in FIG. Subsequently, a gate insulating film 32 is formed on the gate electrode T12g by a CVD method or the like. At this time, openings are formed on the contact electrodes 70a and 71a, respectively.

  Next, contact holes 62 to 64 (not shown) which are through holes are formed in the gate insulating film 32. These correspond to the contact holes 62 to 64 shown in FIG. Subsequently, a source-drain conductive film made of, for example, a Mo film, a Cr film, an Al film, a Cr / Al laminated film, an AlTi alloy film or an AlNdTi alloy film, an AlNi alloy film, or a MoNb alloy film is formed by sputtering or vacuum deposition. The film is formed by a method or the like. The source-drain conductive film is patterned by photolithography to form the data line Ld, the source electrode T12s of the driving transistor T12, and the drain electrode T12d as shown in FIG. At this time, although not shown, the anode line La is also formed.

  Next, an interlayer insulating film 47 made of a silicon nitride film is formed by CVD or the like so as to cover the drive transistor T12 and the like. The interlayer insulating film 47 is patterned by photolithography, and an opening is formed on the contact electrode 70b and on the source electrode T12s of the drive transistor T12.

  Next, a transparent conductive film such as ITO or a light-reflective conductive film and a transparent conductive film such as ITO are formed on the interlayer insulating film 47 by sputtering, vacuum deposition, or the like. This conductive film is patterned by photolithography to form the pixel electrode 42 and the contact electrode 70c as shown in FIG. At this time, a part of the pixel electrode 42 is formed so as to overlap with the source electrode T12s of the driving transistor T12.

  Next, a photosensitive material such as photosensitive polyimide is applied so as to cover the interlayer insulating film 47. The applied photosensitive material is patterned by exposing and developing through a mask corresponding to the shape of the partition wall 48. As shown in FIG. 17A, a partition wall 48 having an opening is formed. Subsequently, the light emitting layer 45 and the counter electrode 46 are formed in the same manner as described above. In this way, the pixel 110 having the power line contact 71 shown in FIG. 17B is formed. A passivation film such as silicon nitride may be further formed on the counter electrode 46. Thereafter, the light emitting device 20 is formed in the same manner as in the first embodiment.

  In the present embodiment, in order to facilitate understanding of the invention, an example in which one power supply line contact 71 is arranged for one pixel 110 has been shown. However, as in the first embodiment, One pixel is not necessarily arranged for every pixel.

  In the present embodiment, the conductor layer 55 and the counter electrode 46 are connected, and the conductor layer 56 and the anode line La are connected. However, as shown in FIG. 23, the conductor layer 56 and the counter electrode are connected. 46, conductor layer 55 and anode line La (not shown) may be connected to each other. In this case, for example, a predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied to the conductor layer 56, and for example, a predetermined high voltage Vdd is applied to the conductor layer 55. In addition, each conductor layer and each corresponding electrode are electrically connected also outside the substrate 31.

  In the present embodiment, a configuration including only the light emitting layer 45 as an EL layer contributing to light emission is given as an example. However, the present invention is not limited thereto, and the EL layer may include a hole injection layer and a light emitting layer. You may provide a positive hole injection layer, an interlayer, and a light emitting layer.

  The conductor layer 55 may be assembled with heat exchange means such as a heat sink, a heat radiating fin, or a heat pipe. In this case, a heat conductive adhesive is preferably used for assembly.

  In order to facilitate understanding, in this embodiment, an example in which the conductor layers 55 and 56 are formed on the entire upper surface and lower surface of the substrate 31 is shown. However, in the first embodiment, a plurality of metal plates 50 are arranged. As shown in the example, the conductor layers 55 and 56 may be divided into a plurality of regions and disposed on the upper surface and the lower surface of the substrate 31, respectively.

(Third embodiment)
Next, a light emitting device 500 according to a third embodiment of the present invention and its operation will be described. As shown in FIG. 18, in the light emitting device 500, the metal plate 50 is divided into a plurality of parts and disposed on the substrate 31. Each metal plate 50 is electrically connected to the anode line La via a through hole 85 and a power supply line contact 71 formed in the substrate 31, for example, with a configuration as shown in FIG. Each metal plate 50 has a corresponding anode driver 15.

  In the 3Tr current sink driving of a so-called 3Tr circuit having three transistors in one pixel circuit, the light-emitting device 500 divides the back metal plate into N blocks and N blocks each including p anode lines La. In other words, the blocks are driven collectively for each block. As shown in FIG. 19, in the light emitting device 500, the TFT panel 11 is divided into N blocks 11-1 to 11-N (u = 1 to N, N: natural numbers).

  As shown in FIG. 20, each pixel circuit 11 (i, j) in each block 11-u is a 3Tr circuit configured by an organic EL element 30, three transistors T11 to T13, and a capacitor Cs. .

  The transistors T11 to T13 are TFTs configured by n-channel FETs.

  The drain (terminal) of the transistor T11 is connected to the anode line La (j) (the drain of the transistor T13), and the source (terminal) is connected to the gate of the transistor T13.

  The gate (terminal) of the transistor T11 is connected to the select line Ls (u, j) (u = 1 to N, j = 1 to p).

  The drain of the transistor T12 is connected to the anode terminal of the organic EL element 30 and the source of the transistor T13.

  The gate of the transistor T12 is connected to the select line Ls (u, j) (u = 1 to N, j = 1 to p).

  The source of the transistor T12 is connected to the data line Ld (i) (i = 1 to m).

  One end of the capacitor Cs is connected to the source of the transistor T11 and the gate of the transistor T13, and the other end is connected to the source of the transistor T13 and the anode terminal of the organic EL element 30.

  The select driver 14 shown in FIG. 19 has each pixel circuit 11 (i, j) of each block 11-u via a select line Ls (u, j) (u = 1 to N, j = 1 to n). Connected to the gates of the transistors T11 and T12.

  The anode drivers 15_1 to 15_N are connected to the drains of the transistors T13 of the pixel circuits 11 (i, j) via the anode lines La (j) (j = 1 to N), respectively. The anode drivers 15_1 to 15_N output L level or H level voltage signals.

  The H level voltage is a voltage for bringing the organic EL element 30 of each pixel circuit 11 (i, j) into a light emitting state, and is set to + 15V, for example.

  The data driver 16 outputs a voltage signal of an analog gradation voltage to each data line Ld (i), and outputs the gradation voltage to the gate of the transistor T13 for each block pixel circuit 11 (i, j) of the block 11-u. Write to the capacitor Cs connected between the sources.

  As shown in FIG. 21, at times t10 to t11, t11 to t12,..., T13 to t17, the select driver respectively selects select lines Ls (1, 1), ..., Ls (1, n). A row selection signal at H level is output.

  Also at the times t14 to t15 and t16 to t17, the select driver sequentially outputs an H level row selection signal to the select lines Ls (u, 1),..., Ls (for each of the blocks 11-2 to 11-N. u, n) (u = 2 to N).

  In addition, the anode driver 15_1 transmits an L level voltage signal to the corresponding anode line La (j) from time t10 to t14, the anode driver 15_2 transmits from time t14 to t15,... Output.

  The transistors T11 and T12 shown in FIG. 20 are turned on while the select driver 14 outputs an H level row selection signal and the anode driver 15 outputs an L level voltage signal.

  When the data driver 16 supplies a negative gradation signal to the data line Ld (i), the current passes from the anode driver 15_u through the anode line La (u), the transistors T13 and T12, and the data line Ld (i). Then, the data flows to the data driver 16 and a voltage is written to the capacitor Cs. In this way, block control of the light emitting device 500 becomes possible.

  The light emitting device and the manufacturing method thereof according to the present invention have been described above with reference to the embodiments. However, the present invention is not limited to these embodiments, and various modifications can be made as follows.

  In the present embodiment, the top emission type organic EL element has been mainly described, but a bottom emission type organic EL element may be used. In the case of the bottom emission type, the organic EL element is provided on the light emitting layer 45 side, an electron-injecting lower layer made of a conductive material, for example, a material having a low work function such as Li, Mg, Ca, Ba, etc. And an upper layer made of a light-reflective conductive metal. In addition, the conductor layer disposed on the substrate is a light-transmitting conductive material, or from a metal plate or the like divided into a plurality of blocks so as not to completely block the light emitted from the light emitting portion. Composed.

  DESCRIPTION OF SYMBOLS 10,20,500 ... Light-emitting device, 11 ... TFT panel, 11 (i, j) ... Pixel circuit, 12 ... Display signal generation circuit, 13 ... System controller, 14 ... Select driver, 15 ... Anode driver, 16 ... Data driver , 30: Light emitting element (organic EL element), 31 ... Substrate, 32 ... Gate insulating film, 33 ... Planarizing film, 40 ... Light emitting part, 42 ... Pixel electrode, 45 ... Light emitting layer, 46 ... Counter electrode (cathode electrode) 47 ... Interlayer insulating film, 47a ... Opening, 48 ... Partition, 50 ... Metal plate, 51 ... Conductive paste, 52 ... Via, 53 ... Protective film, 54 ... Contact electrode, 55, 56 ... Conductor layer, 61 ... Connection part, 62, 63, 64 ... contact hole, 70 ... common electrode contact, 70a, 70b, 70c ... contact electrode, 71 ... power line contact, 71a, 71b, 71c ... con Electrode, 80 ... resist, 85,86 ... through hole, 87a, 87b ... opening, 100,110,120,130 ... pixel, 114 ... semiconductor layer, 115 ... stopper film, 116,117 ... ohmic contact layer, 200 ... Anode driver, 300 ... scanning line driver, 1200 ... digital camera, 1201 ... lens unit, 1202 ... operation unit, 1203 ... display unit, 1204 ... finder, 1210 ... computer, 1211 ... display unit, 1212 ... operation unit, 1220 ... Cellular phone, 1221 ... display unit, 1222 ... operation unit, 1223 ... receiving unit, 1224 ... transmitting unit, T11d, T12d ... drain electrode, T11g, T12g ... gate electrode, T11s, T12s ... source electrode, La ... anode line, Ls ... select line, Ld ... data line, T1 DESCRIPTION OF SYMBOLS 1, T13 ... Selection transistor, T12 ... Drive transistor, Cs ... Capacitor, DC ... Pixel drive circuit

Claims (8)

A method for manufacturing a light emitting device comprising a plurality of thin film transistors and a plurality of light emitting elements arranged on one surface of a substrate,
Forming a gate electrode and a first contact electrode of the thin film transistor on one surface of the substrate simultaneously with the same material ;
Forming an insulating layer on one surface of the substrate so as to cover the first contact electrode and the gate electrode;
On the insulating layer, a second contact electrode that is electrically connected to the first contact electrode through the insulating layer and a source electrode and a drain electrode of the thin film transistor are simultaneously formed using the same material. Process,
A plurality of pixel electrodes spaced from each other at a position that does not overlap with the first contact electrode of one surface of the substrate, and a third contact electrode electrically connected to the second contact electrode, the same material Forming at the same time ,
Forming a partition wall in a region including on the third contact electrode between the pixel electrodes, and forming an opening exposing at least a part of the third contact electrode in the partition wall;
Forming a through-hole from the other surface of the substrate to expose a part of the surface of the third contact electrode in contact with one surface of the substrate;
Disposing a conductive material in the through hole;
Arranging a conductor layer on the other surface of the substrate, and electrically connecting the third contact electrode and the conductor layer via the conductive material;
Forming a light emitting layer on the pixel electrode;
Forming a counter electrode on the light emitting layer and covering the partition, and electrically connecting the counter electrode to the third contact electrode in the opening;
A method for manufacturing a light-emitting device. The conductor layer includes a metal plate,
The method for manufacturing a light emitting device according to claim 1 , wherein: The metal plate is formed of aluminum, copper, an alloy of aluminum or copper, or Kovar.
The manufacturing method of the light-emitting device of Claim 2 . The conductive material is a paste-like material having thermosetting property and conductivity,
The substrate and the conductor layer are bonded by heat-curing the conductive material,
Wherein the method for manufacturing a light emitting device according to any one of claims 1 to 3. The through hole is formed by laser processing.
Wherein the method for manufacturing a light emitting device according to any one of claims 1 to 4. A method of manufacturing a light emitting device comprising a plurality of thin film transistors and a plurality of light emitting elements arranged on the other surface of the substrate,
Forming a first conductor layer on one surface of the substrate;
Forming a second conductor layer on the other surface of the substrate, and forming a power line for supplying current to the light emitting element by the second conductor layer;
Forming a first insulating layer on the second conductor layer;
On the first insulating layer, said first insulating layer, the second conductive layer and the first contact electrode through said substrate being the first conductive layer and electrically connected to the first Forming a second contact electrode that is electrically connected to the power supply line of the second conductor layer through an insulating layer and a gate electrode of the thin film transistor simultaneously with the same material;
Forming a second insulating layer on the first insulating layer so as to cover the first contact electrode, the second contact electrode, and the gate electrode;
A third contact electrode that is electrically connected to the first contact electrode through the second insulating layer on the second insulating layer, and the second contact through the second insulating layer. Forming a fourth contact electrode electrically connected to the electrode and a source electrode and a drain electrode of the thin film transistor simultaneously with the same material;
A plurality of pixel electrodes spaced apart from each other at positions not overlapping the first contact electrode , the second contact electrode, the third contact electrode, and the fourth contact electrode, and electrically connected to the third contact electrode Forming a fifth contact electrode connected to the same material at the same time ;
A first barrier rib is formed in a region including the upper portion of the fifth contact electrode between the pixel electrodes, a second barrier rib is formed in a region including the upper portion of the fourth contact electrode, and the first barrier rib includes the first barrier rib. Forming an opening exposing at least a portion of the fifth contact electrode;
Forming a light emitting layer on the pixel electrode;
Forming a counter electrode so as to cover the light emitting layer and the first barrier rib and the second barrier rib, and electrically connecting the counter electrode with the fifth contact electrode in the opening;
A method for manufacturing a light-emitting device. Further comprising forming a hole injection layer on the pixel electrode;
The light emitting layer is formed on the hole injection layer.
Wherein the method for manufacturing a light emitting device according to any one of claims 1 to 6. Further comprising the step of forming an interlayer on the hole injection layer,
The light emitting layer is formed on the interlayer layer.
The method for manufacturing a light emitting device according to claim 7 .

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