JP5685620B2 - Acoustic chip and acoustic device - Google Patents

Description

  The present invention relates to an acoustic chip and an acoustic device, and more particularly to a thermoacoustic chip and a thermoacoustic device.

  In general, loudspeakers include a signal device and a sound wave generator. The signaling device transmits a signal to the sound wave generator. A thermoacoustic device is a type of acoustic device that uses a thermoacoustic phenomenon, and when an alternating current is passed through a conductor, sound is generated by heat. Specifically, heat is generated in the thermoacoustic device and propagated to the surrounding medium, and the sound expansion is generated by changing the density of the surrounding medium by the thermal expansion caused by the propagated heat.

Referring to Non-Patent Document 1, in a thermoacoustic apparatus, a carbon nanotube film is used for a sound wave generator. Since this carbon nanotube film has a large specific surface area and a small heat capacity per unit area (less than 2 × 10 ⁻⁴ J / cm ² · K), the sound wave generated by the thermoacoustic device is strong and the thermoacoustic frequency is wide. (100 Hz to 100 kHz).

  However, since the sound wave generator in Non-Patent Document 1 converts electric energy into heat and heats the air to generate sound, this principle is distinguished from the principle of generating sound like a conventional kite, It is necessary to design a separate large drive circuit for the thermoacoustic device. Therefore, the structure of the thermoacoustic apparatus becomes complicated, the use of the thermoacoustic apparatus becomes inconvenient, and it is disadvantageous for miniaturization. Moreover, since the carbon nanotube film utilized for the sound generator of a loudspeaker is easy to be destroyed by external force, it affects the service life of the thermoacoustic apparatus.

Chinese Patent Application No. 101239712 JP 2004-107196 A JP 2006-161563 A

Lin Xiao et al. "Flexible, Stretchable, Transparent Carbon Nanotube Thin Film Speakers", Nano Letters, Vol. 8 (12), p. 4539-4545

  In order to solve the above-mentioned problems, the present invention provides an acoustic chip that is not easily broken and that is convenient for use in a loudspeaker, and has a simple structure, which can be produced, reduced in size, and industrialized. A thermoacoustic device that is easy to realize is provided.

  The acoustic chip of the present invention includes a loudspeaker and a housing. The loudspeaker includes a first substrate, a sound wave generator, at least one first electrode, and at least one second electrode. The first substrate has a first surface, the sound wave generator is disposed on the first surface of the first substrate, and the at least one first electrode and the at least one second electrode are spaced apart from each other. Electrically connected to the sound wave generator, the housing has a space, the loudspeaker is accommodated in the space, the housing has at least one opening, and the sound wave generator has at least one open hole. The housing is disposed opposite to the hole, and the housing has at least two pins, and the housing is electrically connected to at least one first electrode and at least one second electrode by the at least two pins.

  The acoustic chip according to claim 1, wherein a plurality of protrusions and a plurality of recesses are formed on the first surface of the substrate, and the depth of the recesses is 100 μm to 200 μm.

  The acoustic device of the present invention includes an acoustic chip, an integrated circuit chip, and a printed circuit board. The acoustic chip is installed on the printed circuit board, and the integrated circuit chip is installed on the printed circuit board. The chip and the integrated circuit chip are electrically connected.

  Compared with the prior art, the acoustic chip and the acoustic device of the present invention have the following advantages. First, since the loudspeaker is accommodated in the space, the carbon nanotube structure of the loudspeaker can be protected, so that the carbon nanotube structure is not broken by an external force. Secondly, the acoustic device can be connected to an external circuit by a pin, so that it is convenient to use and can be applied to a circuit board of a conventional electronic component. Third, the integrated circuit chip is installed on a printed circuit board, and the loudspeaker is installed on the printed circuit board by the printed circuit board. At this time, the loudspeaker and the integrated circuit chip are electrically connected by the printed circuit board. As a result, the acoustic device has a simple structure and can be downsized, which is convenient for use.

1 is a structural diagram of an acoustic chip in Example 1 of the present invention. It is a scanning electron micrograph of the carbon nanotube film in the acoustic chip of Example 1 of the present invention. 2 is a scanning electron micrograph of a non-twisted carbon nanotube wire used in Example 1 of the present invention. 2 is a scanning electron micrograph of a twisted carbon nanotube wire used in Example 1 of the present invention. It is a structural diagram of the acoustic chip in Example 2 of the present invention. It is a structural diagram of the acoustic chip in Example 3 of the present invention. It is a structural diagram of the acoustic chip in Example 4 of the present invention. It is a structural diagram of the acoustic chip in Example 5 of the present invention. It is a structural diagram of the acoustic chip in Example 6 of the present invention. It is a structural diagram of the acoustic chip in Example 7 of the present invention. It is a structural diagram of the acoustic chip in Example 8 of the present invention. It is a structural diagram of the acoustic chip in Example 9 of the present invention. It is a structure figure of the acoustic chip in Example 10 of this invention. It is a top view of the loudspeaker in Example 10 of this invention. It is an optical microscope photograph of the carbon nanotube wire after processing with the organic solvent in Example 10 of this invention. It is an optical microscope photograph of the loudspeaker in Example 10 of this invention. It is an effect figure of generation | occurrence | production of the sound of the acoustic chip in Example 10 of this invention. It is a sound pressure level-frequency curve figure of the acoustic chip in Example 10 of this invention. It is a structure figure of the audio equipment in Example 11 of the present invention. It is a block diagram of the audio equipment in Example 12 of the present invention. It is structural drawing of the audio equipment in Example 13 of this invention. It is a structure figure of the audio equipment in Example 14 of the present invention. It is structural drawing of the audio equipment in Example 15 of this invention. It is a structure figure of the audio equipment in Example 16 of the present invention.

  Embodiments of the present invention will be described below with reference to the drawings.

(Example 1)
Referring to FIG. 1, the acoustic chip 10 </ b> A of the present embodiment includes a loudspeaker 100 and a housing 200. The housing 200 has a space, and the loudspeaker 100 is accommodated in this space.

  The loudspeaker 100 includes a first substrate 102, a first electrode 104, a second electrode 106, and a sound wave generator 108. The first substrate 102 has a first surface 101 and a second surface 103 facing each other. The first electrode 104 and the second electrode 106 are installed with a space therebetween and are electrically connected to the sound wave generator 108. When the first substrate 102 is an insulating substrate, the first electrode 104 and the second electrode 106 are directly installed on the first surface 101 of the first substrate 102. The sound wave generator 108 may be installed in contact with the first surface 101 of the first substrate 102. Alternatively, the sound wave generator 108 may be suspended by the first electrode 104 and the second electrode 106.

The shape of the first substrate 102 is not limited, and may be a circle, a rectangle, a rectangle, and other shapes. The first surface 101 and the second surface 103 of the first substrate 102 are flat or curved. Size of the first substrate 102 is not limited, but is selected as required, preferably, the area of the first substrate 102 is 25 mm ² 100 mm ^2. Specifically, the area of the first substrate 102 is 40 mm ² , 60 mm ^2, or 80 mm ² . The thickness of the first substrate 102 is 0.2 mm to 0.8 mm. Thereby, a micro-sized acoustic chip can be manufactured, and downsizing of electronic components (for example, a mobile phone, a computer, an earphone, etc.) can be realized.

  Further, the material of the first substrate 102 is not limited as long as it is a hard material or a soft material having a specific strength. In this embodiment, the resistance of the material of the first substrate 102 is larger than the resistance of the sound wave generator 108. In addition, since the material of the first substrate 102 has excellent heat insulation properties, the sound wave generator 108 is generated when the sound wave generator 108 is placed in contact with the first surface 101 of the first substrate 102. Heat can be prevented from being absorbed by the first substrate 102. The material of the first substrate 102 is glass, ceramic, quartz, diamond, polymer, silicon oxide, metal oxide, or wood material. Specifically, in the present embodiment, the first substrate 102 is a square with a side length of 8 mm, a thickness of 0.6 mm, and the material is glass. The first surface 101 of the first substrate 102 is a plane.

The sound wave generator 108 has a very low heat capacity per unit area. In this embodiment, the heat capacity per unit area of the sound wave generator 108 is smaller than 2 × 10 ⁻⁴ J / cm ² · K. Specifically, the sound wave generator 108 is a conductive structure and has a large specific surface area and a small thickness. Thereby, the sound wave generator 108 can convert the input electric energy into heat, and can quickly exchange the heat with the surrounding medium. The sound wave generator 108 preferably has a self-supporting structure. Here, the self-supporting structure is a structure that can be used without using a support. That is, the sound wave generator 108 maintains its specific shape without using a support. As a result, the sound wave generator 108 can be installed by suspending a part of the sound wave generator 108, can sufficiently contact the surrounding medium, and can propagate heat. Here, the peripheral medium is a medium that exists outside the sound wave generator 108, and is not a medium that exists inside the sound wave generator 108. For example, when the sound wave generator 108 is composed of only a plurality of carbon nanotubes, the surrounding medium does not include a medium present in each carbon nanotube.

  In this embodiment, the sound wave generator 108 includes a carbon nanotube structure, and preferably includes only the carbon nanotube structure. Specifically, the carbon nanotube structure has a layered structure. The thickness of the layered carbon nanotube structure is preferably 0.5 nm to 1 mm. When the thickness of the carbon nanotube structure is thin, for example, 10 nm or less, the transparency of the carbon nanotube structure is excellent. Since the carbon nanotube structure is a self-supporting structure, and the plurality of carbon nanotubes in the carbon nanotube structure are connected to each other by intermolecular force, the carbon nanotube structure has a specific shape. Accordingly, a part of the carbon nanotube structure can be supported by the first substrate 102 and the other part can be suspended. That is, at least a part of the carbon nanotube structure is suspended.

The carbon nanotube structure includes at least a carbon nanotube film, a carbon nanotube wire, or a combination thereof, and preferably includes only carbon nanotubes. The carbon nanotube film is obtained by stretching directly from the carbon nanotube array. The thickness of the carbon nanotube film is 0.5 nm to 100 μm, and the heat capacity per unit area of the carbon nanotube film is smaller than 1 × 10 ⁻⁶ J / cm ² · K. The carbon nanotubes are one type or various types of single-walled carbon nanotubes, double-walled carbon nanotubes, and multi-walled carbon nanotubes. The diameter of the single-walled carbon nanotube is 0.5 nm to 50 nm, the diameter of the double-walled carbon nanotube is 1 nm to 50 nm, and the diameter of the multi-walled carbon nanotube is 1.5 nm to 50 nm. The length of the carbon nanotube film is not limited, and the width can be selected according to the width of the carbon nanotube array.

  Referring to FIG. 2, the carbon nanotube film has a self-standing structure composed of a plurality of carbon nanotubes, and the plurality of carbon nanotubes are arranged along the same direction. The extending direction of the plurality of carbon nanotubes is basically parallel to the surface of the carbon nanotube film. The plurality of carbon nanotubes are connected by intermolecular force. Specifically, each carbon nanotube in the plurality of carbon nanotubes is connected to the adjacent carbon nanotubes in the extending direction, and the ends are connected by intermolecular force. The carbon nanotube film also includes a small number of random carbon nanotubes. However, since most of the carbon nanotubes are arranged along the same direction, the extending direction of the random carbon nanotubes does not affect the extending direction of most of the carbon nanotubes.

  The carbon nanotube film has a self-supporting structure. Here, the self-supporting structure is a form in which a carbon nanotube film can be used independently without using a support. That is, it means that the carbon nanotube film can be suspended by supporting the carbon nanotube film from both sides facing each other without changing the structure of the carbon nanotube film. The carbon nanotubes in the carbon nanotube film are self-supported by arranging the ends connected to each other by intermolecular force. Specifically, a large number of carbon nanotubes in the carbon nanotube film are not basically linear but may be slightly curved. Alternatively, the extending direction may not be completely arranged and may be slightly shifted. Therefore, among the plurality of carbon nanotubes arranged along the same direction, adjacent carbon nanotubes may partially contact each other.

  The plurality of carbon nanotubes are parallel to the first surface 101 of the first substrate 102. When the carbon nanotube structure includes a plurality of carbon nanotube films, and the plurality of carbon nanotube films are very small, the plurality of carbon nanotube films are arranged on the first surface 101 of the first substrate 102 on the same surface. Installed. The carbon nanotube structure may also include multiple carbon nanotube films that overlap each other, where the carbon nanotubes in adjacent two-layer carbon nanotube films intersect and have an angle β, where the angle β 0 ° to 90 °, preferably 90 °. A method for producing a carbon nanotube film is described in Patent Document 1.

  In this embodiment, the sound wave generator 108 is a single-walled carbon nanotube film. The single-walled carbon nanotube film is suspended from the first surface 101 of the first substrate 102 by the first electrode 104 and the second electrode 106. The thickness of the single-walled carbon nanotube film is 50 nm, and the light transmittance of the single-walled carbon nanotube film is 67% to 95%. Since the carbon nanotube film has strong adhesiveness, it can be directly adhered to the surface of the first electrode 104 and the surface of the second electrode 106. Further, the carbon nanotube film can be fixed to the surface of the first electrode 104 and the surface of the second electrode 106 by an adhesive. The carbon nanotubes in the carbon nanotube film extend from the first electrode 104 toward the second electrode 106.

  Furthermore, after the carbon nanotube film is directly adhered to the surface of the first electrode 104 and the surface of the second electrode 106, the carbon nanotube film is treated with an organic solvent. Specifically, using a test tube, the organic solvent is dropped until the carbon nanotube film is immersed. The organic solvent is a volatile organic solvent, for example, ethanol, methanol, acetone, ethylene chloride or chloroform. In this example, the organic solvent is ethanol. When the volatile organic solvent volatilizes, microscopically, the adjacent carbon nanotubes in a part of the carbon nanotube film shrink and become bundles by the action of surface tension. In addition, the carbon nanotube film adjacent to the part shrinks into a bundle, so that the mechanical strength and toughness of the carbon nanotube film are increased, the surface area of the carbon nanotube film is decreased, and the adhesiveness is decreased. Macroscopically, the carbon nanotube film has a uniform film structure.

  The carbon nanotube wire is a non-twisted carbon nanotube wire or a twisted carbon nanotube wire. Non-twisted carbon nanotube wires and twisted carbon nanotube wires are self-supporting structures. Referring to FIG. 3, when the carbon nanotube wire is a non-twisted carbon nanotube wire, the carbon nanotube wire includes a plurality of carbon nanotube segments (not shown) connected end to end with an intermolecular force. Further, a plurality of carbon nanotubes having the same length are arranged in parallel in each carbon nanotube segment. The plurality of carbon nanotubes are arranged in parallel to the central axis of the carbon nanotube wire. The length, thickness, uniformity and shape of the carbon nanotube segments are not limited. The length of the non-twisted carbon nanotube wire is not limited, and the diameter is 0.5 nm to 100 μm. The carbon nanotube film of FIG. 2 is treated with an organic solvent to obtain a non-twisted carbon nanotube wire. Specifically, the entire surface of the carbon nanotube film is immersed with an organic solvent. Thereafter, when the volatile organic solvent volatilizes, a plurality of carbon nanotubes parallel to each other in the carbon nanotube film are tightly bonded to each other by intermolecular force due to the action of surface tension, and the carbon nanotube film contracts and becomes non- A twisted carbon nanotube wire is formed. The organic solvent is ethanol, methanol, acetone, ethylene chloride or chloroform. Compared with the carbon nanotube film not treated with the organic solvent, the non-twisted carbon nanotube wire treated with the organic solvent has a reduced specific surface area and a small adhesion. Further, the mechanical strength and toughness of the carbon nanotube wire are enhanced, and the possibility that the carbon nanotube wire is broken by an external force is reduced.

  Referring to FIG. 4, a twisted carbon nanotube wire can be formed by applying opposing forces to opposing ends along the longitudinal direction of the carbon nanotube film of FIG. 2. This twisted carbon nanotube wire preferably includes a plurality of carbon nanotube segments (not shown) connected end to end by intermolecular forces. Each carbon nanotube segment has a plurality of carbon nanotubes having the same length arranged in parallel. The length, thickness, uniformity and shape of the carbon nanotube segments are not limited. The length of one twisted carbon nanotube wire is not limited, and its diameter is 0.5 nm to 100 μm. Further, the twisted carbon nanotube wire is treated with an organic solvent. The twisted carbon nanotube wire treated with the organic solvent has a reduced specific surface area and low adhesion, while the mechanical strength and toughness of the carbon nanotube wire are enhanced. A method for producing a carbon nanotube wire is described in Patent Document 2 and Patent Document 3.

  The first electrode 104 and the second electrode 106 are electrically connected to the sound wave generator 108, respectively, and a frequency electric signal is input to the sound wave generator 108 through the first electrode 104 and the second electrode 106. The first electrode 104 and the second electrode 106 may be directly installed on the first surface of the first substrate 102. Alternatively, the first electrode 104 and the second electrode 106 may be installed on the first surface of the first substrate 102 using a support element. The first electrode 104 and the second electrode 106 are made of a conductive material, and their shapes and structures are not limited. Specifically, the first electrode 104 and the second electrode 106 may be in the form of elongated strips, rods, or other shapes, and the materials are metal, conductive polymer, conductive adhesive, conductive paste, conductive slurry, metallic The carbon nanotube, the conductive material such as ITO. Since the carbon nanotubes have excellent conductivity in the axial direction, when the carbon nanotubes are arranged along the same direction, the carbon nanotubes extend along the direction from the first electrode 104 to the second electrode 106. Is preferred. In the present embodiment, the first electrode 104 and the second electrode 106 are two conductive slurry layers installed in parallel.

  In the loudspeaker 100, the carbon nanotube structure included in the sound wave generator 108 is protected by the casing 200, so that the carbon nanotube structure is not broken by an external force. The size and shape of the housing 200 are not limited and can be selected as necessary. The housing 200 has at least one opening 210, and the sound generated by the loudspeaker 100 can be transmitted to the outside of the housing 200 through the opening 210. The sound wave generator 108 is preferably installed between the first substrate 102 and the opening 210 and is opposed to at least one opening 210. In the present embodiment, the housing 200 includes a second substrate 202 and a protective cover 204. The protective cover 204 is installed on the surface of the second substrate 202. The loudspeaker 100 is installed on the surface of the second substrate 202, and the protective cover 204 covers the loudspeaker 100. That is, the second substrate 202 and the protective cover 204 form a space, and the loudspeaker 100 is accommodated in the space.

The second substrate 202 is a glass plate, a ceramic plate, a printed circuit board (PCB), a polymer plate, or a wood plate. The second substrate 202 is used to support and fix the loudspeaker 100. The size and shape of the second substrate 202 are not limited and can be selected as necessary. The area of the second substrate 202 is larger than the size of the loudspeaker 100. Area of the second substrate 202 is 36mm ² ~150mm ^2, for ^example, a ^{49mm 2, 64mm 2, 81mm 2} , 100mm 2. The thickness of the second substrate 202 is 0.5 mm to 5 mm, for example, 1 mm, 2 mm, 3 mm, and 4 mm. The protective cover 204 includes an annular side wall 206 and a bottom wall 208. The bottom wall 208 has a plurality of the apertures 210. The size and shape of the protective cover 204 are not limited and can be selected as necessary. The size of the protective cover 204 is slightly larger than the size of the loudspeaker 100. Further, the protective cover 204 is fixed to the surface of the second substrate 202 by an adhesive or by a removable method. The material of the protective cover 204 is glass, ceramic, polymer, or metal. In this embodiment, the second substrate 202 is a printed circuit board, and the protective cover 204 is a metal bucket type having one end opened. The protective cover 204 and the loudspeaker 100 are installed with a space therebetween.

  The housing 200 has two pins 212, and the two pins 212 are installed outside the housing 200. There is no restriction on the position of the two pins 212. The two pins 212 are electrically connected to the first electrode 104 and the second electrode 106, respectively. The two pins 212 may be a pin grid array (PGA), a surface mount type (SMT), or other shapes. When the two pins 212 are a pin grid array, when the acoustic chip 10A is installed in the electronic component, the two pins 212 are directly inserted into corresponding insertion holes in the electric circuit board of the electronic component. When the two pins 212 are surface-mounted, when the acoustic chip 10A is installed on the electronic component, the two pins 212 are welded to the surface of the electric circuit board of the electronic component. In the present embodiment, the two pins 212 are a pin grid array, are installed on the bottom surface of the second substrate 202 opposite to the loudspeaker 100, and are respectively connected to the first electrode 104 and the second electrode 106 by the conducting wire 110. Electrically connected.

(Example 2)
Referring to FIG. 5, Example 2 of the present invention provides an acoustic chip 10B. The acoustic chip 10 </ b> B of the present embodiment includes a plurality of loudspeakers 100 and a plurality of cases 200. The plurality of casings 200 have a plurality of spaces, and the plurality of loudspeakers 100 are respectively accommodated in the plurality of spaces.

  The structure of the acoustic chip 10B of the second embodiment is basically the same as the structure of the acoustic chip 10A of the first embodiment, except that the acoustic chip 10B includes one second substrate 202 and a plurality of The point is that it includes a protective cover 204 and a plurality of loudspeakers 100. The plurality of loudspeakers 100 are installed on the surface of the second substrate 202 and covered by the corresponding protective covers 204. Further, the housing 200 has a plurality of pins 212, two pins 212 are installed for each of the loudspeakers 100, and are electrically connected to the two electrodes of the corresponding loudspeakers 100. By controlling the electric circuit, the plurality of loudspeakers 100 simultaneously generate sound or generate sound with a specific phase difference. When a plurality of loudspeakers 100 are connected in parallel or in series, the plurality of loudspeakers 100 can share two pins 212.

Example 3
Referring to FIG. 6, the third embodiment of the present invention provides an acoustic chip 10C. The acoustic chip 10 </ b> C of the present embodiment includes a plurality of loudspeakers 100 and a housing 200. The housing 200 has a space, and the plurality of loudspeakers 100 are accommodated in this space.

  The structure of the acoustic chip 10C of the third embodiment is basically the same as the structure of the acoustic chip 10A of the first embodiment, except that one housing 200 accommodates a plurality of loudspeakers 100. It is. Further, the housing 200 has a plurality of pins 212, two pins 212 are installed for each loudspeaker 100, and are electrically connected to the two electrodes of the corresponding loudspeakers 100. By controlling the electric circuit, the plurality of loudspeakers 100 simultaneously generate sound or generate sound with a specific phase difference. When a plurality of loudspeakers 100 are connected in parallel or in series, the plurality of loudspeakers 100 can share two pins 212.

Example 4
Referring to FIG. 7, the fourth embodiment of the present invention provides an acoustic chip 20A. The acoustic device 20 </ b> A according to the present embodiment includes a plurality of loudspeakers 100 and a housing 200. The housing 200 has a space, and the plurality of loudspeakers 100 are accommodated in this space.

  The structure of the acoustic chip 20A of the fourth embodiment and the structure of the acoustic chip 10A of the first embodiment are basically the same, except that the housing 200 includes a second substrate 202 and a protective net 216. In addition, the second substrate 202 has a first recess 214. Specifically, the loudspeaker 100 is installed in the first recess 214 of the second substrate 202, and the protective net 216 covers the first recess 214. The protective net 216 has a plurality of openings 210. The protective net 216 may be a metal net or a fiber net. Alternatively, a metal plate, a ceramic plate, a resin plate or a glass plate having a plurality of openings may be used. The protective net 216 is suspended from the first recess 214. The first recess 214 is manufactured by etching, imprinting, molding, and stamping. In the present embodiment, the second substrate 202 is a printed circuit board, and the protective net 216 is a metal net. The housing 200 has two pins, and the two pins may be installed on the same side surface or different side surfaces of the bottom portion of the second substrate 202.

(Example 5)
Referring to FIG. 8, the fifth embodiment of the present invention provides an acoustic chip 20B. The acoustic chip 20 </ b> B according to the present embodiment includes a plurality of loudspeakers 100 and a housing 200. The housing 200 has a space, and the plurality of loudspeakers 100 are accommodated in this space.

  The structure of the acoustic chip 20B of the fifth embodiment is basically the same as the structure of the acoustic chip 20A of the fourth embodiment, except that the second substrate 202 has a plurality of first recesses 214, The plurality of first recesses 214 are installed on the same surface of the second substrate 202, the loudspeaker 100 is installed in the first recess 214, and one loudspeaker 100 corresponds to one first recess 214. One protective net 216 covers the plurality of first recesses 214. Further, the housing 200 has a plurality of pins 212, and two pins 212 are installed for each loudspeaker 100, and the two pins 212 are electrically connected to the two electrodes of the corresponding loudspeaker 100. Is done. By controlling the electric circuit, the plurality of loudspeakers 100 simultaneously generate sound or generate sound with a specific phase difference. When a plurality of loudspeakers 100 are connected in parallel or in series, the plurality of loudspeakers 100 can share two pins 212.

(Example 6)
Referring to FIG. 9, Example 6 of the present invention provides an acoustic chip 20C. The acoustic chip 20 </ b> C of the present embodiment includes a plurality of loudspeakers 100 and a housing 200. The housing 200 has a space, and the plurality of loudspeakers 100 are accommodated in this space.

  The structure of the acoustic chip 20C of the sixth embodiment and the structure of the acoustic chip 20A of the fourth embodiment are basically the same, except that a plurality of loudspeakers 100 are installed in one recess 214. Is a point. Further, the housing 200 has a plurality of pins 212, and two pins 212 are installed for each loudspeaker 100, and the two pins 212 are electrically connected to the two electrodes of the corresponding loudspeaker 100. Is done. By controlling the electric circuit, the plurality of loudspeakers 100 simultaneously generate sound or generate sound with a specific phase difference. When a plurality of loudspeakers 100 are connected in parallel or in series, the plurality of loudspeakers 100 can share two pins 212.

(Example 7)
Referring to FIG. 10, Example 7 of the present invention provides an acoustic chip 30A. The acoustic chip 30 </ b> A of the present embodiment includes a loudspeaker 100 and a housing 200. The housing 200 has a space, and the loudspeaker 100 is accommodated in this space.

  The structure of the acoustic chip 30A of the seventh embodiment and the structure of the acoustic chip 10A of the first embodiment are basically the same, except that the loudspeaker 100 includes the first electrode 104 and the second electrode 106. And a sound wave generator 108. Moreover, the housing | casing 200 has the two pins 212, and these two pins 212 are surface mounting types, and are installed in the both sides of the housing | casing 200, respectively. Specifically, the first electrode 104 and the second electrode 106 are directly installed on the surface of the second substrate 202, and the sound wave generator 108 is suspended and installed by the first electrode 104 and the second electrode 106. . That is, the loudspeaker 100 can omit the first substrate 102. This further simplifies the structure of the acoustic device 30A. The second substrate 202 is preferably an insulating substrate.

(Example 8)
Referring to FIG. 11, Example 8 of the present invention provides an acoustic chip 30B. The acoustic chip 30 </ b> B of the present embodiment includes a loudspeaker 100 and a housing 200. The housing 200 has a space, and the loudspeaker 100 is accommodated in this space.

  The structure of the acoustic chip 30B of the eighth embodiment is basically the same as the structure of the acoustic chip 20A of the fourth embodiment, except that the loudspeaker 100 includes the first electrode 104 and the second electrode 106. And a sound wave generator 108. Moreover, the housing | casing 200 has the two pins 212, and these two pins 212 are surface mounting types, and are installed in the both sides of the housing | casing 200, respectively. Specifically, in this embodiment, the bottom surface of the recess 214 has one recess, and the sound wave generator 108 is suspended and installed by this recess. That is, the loudspeaker 100 can omit the first substrate 102. Thereby, the structure of the acoustic chip 30B is further simplified. The second substrate 202 is preferably an insulating substrate. In this embodiment, the two pins 212 are attached to the outer surface of the second substrate 202.

Example 9
Referring to FIG. 12, the ninth embodiment of the present invention provides an acoustic chip 40A. The acoustic chip 40A of the present embodiment includes a loudspeaker 100, a housing 200, and a first integrated circuit chip 120. The housing 200 has a space, and the loudspeaker 100 and the first integrated circuit chip 120 are accommodated in this space.

  The structure of the acoustic chip 40A of the ninth embodiment is basically the same as the structure of the acoustic chip 20A of the fourth embodiment, except that the acoustic chip 40A includes the first integrated circuit chip 120. The first integrated circuit chip 120 is a point accommodated in the space. Specifically, the first surface 101 of the first substrate 102 has a second recess 114, and the sound wave generator 108 is suspended by the second recess 114. A third recess 116 is formed in the second surface 103 of the first substrate 102, and the first integrated circuit chip 120 is placed in the third recess 116. The housing 200 has four pins 212, and two of the pins 212 are electrically connected to the first integrated circuit chip 120. As a result, a driving voltage is provided to the first integrated circuit chip 120. The other two pins 212 are electrically connected to the first electrode 104 and the second electrode 106 through the first integrated circuit chip 120 to input a frequency electric signal to the loudspeaker 100.

The position where the first integrated circuit chip 120 is installed is not limited, and is installed in contact with the substrate. For example, the first integrated circuit chip 120 is installed inside the first surface 101, the second surface 103, or the first substrate 102 of the first substrate 102. It ’s fine. The first integrated circuit chip 120 includes a power amplifier circuit (not shown) for frequency electrical signals and a DC bias circuit (not shown). The first integrated circuit chip 120 has a power amplification function and a DC bias function with respect to the frequency electrical signal. As a result, the first integrated circuit chip 120 increases the input frequency electrical signal, and then inputs the frequency electrical signal to the sound wave generator 108 and, at the same time, can solve the problem of frequency multiplication of the frequency electrical signal by the DC bias. . Further, the first integrated circuit chip 120 may be a packaged chip or an unpackaged bare chip. The size and shape of the first integrated circuit chip 120 are not limited. Since the first integrated circuit chip 120 only realizes a power amplification action and a direct current bias action, the internal circuit structure is simple and its area is smaller than 1 cm ² , for example, 49 mm ² , 25 mm ² , 9 mm ^2. Alternatively, it is smaller than 9 mm ² . Thereby, the acoustic device 40A is reduced in size. In this embodiment, the first integrated circuit chip 120 is fixed to the second surface 103 of the first substrate 102 with an adhesive. The first integrated circuit chip 120 is electrically connected to the first electrode 104 and the second electrode 106 by two conductive wires 110, respectively. When the first substrate 102 is an insulating substrate, two holes are formed in the first substrate 102, and the two conductive wires 110 are passed through the two holes. When the first substrate 102 is a conductive substrate, the conductive wire 110 needs to be covered with an insulating material. When the acoustic chip 40A is activated, the first integrated circuit chip 120 outputs a frequency electric signal to the sound wave generator 108, and the sound wave generator 108 intermittently heats the surrounding medium by the output frequency electric signal. Then, the surrounding medium is thermally expanded and heat exchange is performed to generate sound waves.

(Example 10)
Referring to FIGS. 13 and 14, Example 10 of the present invention provides an acoustic chip 40B. The acoustic chip 40B according to the present embodiment includes a loudspeaker 100, a housing 200, and a first integrated circuit chip 120. The housing 200 has a space, and the loudspeaker 100 and the first integrated circuit chip 120 are accommodated in this space.

  The structure of the acoustic chip 40B of the tenth embodiment and the structure of the acoustic chip 40A of the ninth embodiment are basically the same except that the first substrate 102 is made of silicon and the first integrated circuit chip 120 is different. However, it is directly installed on the first substrate 102 by microelectronic processing and is integrally formed with the first substrate 102. At this time, the first surface 101 of the first substrate 102 has a plurality of concavo-convex structures 122, and the loudspeaker 100 includes a plurality of first electrodes 104 and a plurality of second electrodes 106.

  The first substrate 102 is single crystal silicon or polycrystalline silicon. Since the first substrate 102 is made of silicon, the first integrated circuit chip 120 can be directly formed on the first substrate 102. That is, the circuits, microelectronic elements, etc. in the first integrated circuit chip 120 can be directly integrated on the first substrate 102. The first substrate 102 that is a carrier for the electronic circuit and the microelectronic element is integrally formed with the first integrated circuit chip 120. The first integrated circuit chip 120 is electrically connected to the first electrode 104 and the second electrode 106 by a conductive wire 110. The conducting wire 110 passes through the first substrate 102 along the direction perpendicular to the first surface 101 of the first substrate 102 inside the first substrate 102. In this embodiment, the first substrate 102 has a square planar structure, the length of one side is 0.8 mm, the thickness is 0.6 mm, and the material is single crystal silicon.

  The concavo-convex structure 122 includes a plurality of protrusions 1220 and a plurality of recesses 1222, and the plurality of protrusions 1220 and the plurality of recesses 1222 are alternately formed. A part of the carbon nanotube structure is installed on the surface of the protrusion 1220, and the other part is installed suspended through the recess 1222. The plurality of first electrodes 104 and the plurality of second electrodes 106 are alternately disposed on the surface of the carbon nanotube structure on the surface of the protrusion 1220. Thereby, the carbon nanotube structure is fixed to the first surface 101 of the first substrate 102. The plurality of first electrodes 104 are electrically connected to form a first comb electrode. The plurality of second electrodes 106 are electrically connected to form a second comb electrode. Further, the tooth portion of the first comb electrode and the tooth portion of the second comb electrode may be disposed between the carbon nanotube structure and the protrusion 1220. Referring to FIG. 16, the teeth of the first comb electrode and the teeth of the second comb electrode are alternately arranged. By this connection method, the adjacent first electrode 104 and second electrode 106 form one thermoacoustic unit. That is, the sound wave generator 108 includes a plurality of thermoacoustic units. Moreover, the drive voltage of the sound wave generator 108 is lowered by arranging the plurality of thermoacoustic units in parallel.

  The plurality of recesses 1222 are any one or various types of through grooves, through holes, blind grooves, and blind holes. In addition, the plurality of concave portions 1222 are installed by a uniform distribution method, a distribution method having a specific rule, or a random distribution method. In the first surface 101, the length of the recess 1222 is shorter than the length of the side of the first substrate 102. The depth of the recess 1222 can be selected as necessary or according to the thickness of the substrate 100. Preferably, the depth of the recess 1222 is 100 μm to 200 μm. In this case, the first substrate 102 can protect the sound wave generator 108 and at the same time secure a distance between the first substrate 102 and the sound wave generator 108. Due to the distance, the heat generated by the operation of the sound wave generator 108 can be completely absorbed by the first substrate 102. This prevents the generated heat from being propagated to the surrounding medium, thereby preventing the sound volume from being lowered, and ensures that the sound wave generator has an excellent acoustic effect at each acoustic frequency.

  The shape of the cross section in the direction in which the concave portion 1222 extends is V-shaped, rectangular, square-shaped, trapezoidal, polygonal, circular, or other irregular shapes. The width of the recess 1222 (that is, the maximum value of the length of the cross section of the recess 1222) is 0.2 mm to 1 mm. In this embodiment, the recess 1222 is a groove, and its cross section is an inverted trapezoid. That is, the width of the groove becomes narrower as the groove becomes deeper. The angle formed between the bottom surface and the side surface of the inverted trapezoid is α, and the magnitude of the angle α is related to the material of the first substrate 102. Specifically, the angle α is the same as the angle of the crystal plane of the single crystal silicon of the first substrate 102. Preferably, the plurality of recesses 1222 are distributed in parallel with each other and spaced apart from each other. The distance between two adjacent grooves is d1, and d1 is 20 μm to 200 μm. When the first electrode 104 and the second electrode 106 are formed on the surface of the first substrate 102 by the screen printing method, the d1 can ensure that the etching accuracy and the acoustic effect are improved. The extending direction of the recess 1222 is parallel to the extending direction of the first electrode 104 and the second electrode 106.

  In the present embodiment, a plurality of inverted trapezoidal grooves are formed on the first surface 101 of the first substrate 102 so as to be parallel to each other and evenly spaced from each other. The width of the inverted trapezoidal groove on the first surface 101 is 0.6 mm, the depth is 150 μm, d1 is 100 μm, and the angle α is 54.7 degrees.

  The first integrated circuit chip 120 is formed on the side of the first substrate 102 adjacent to the second surface 103. Further, the first integrated circuit chip 120 can be directly integrated on the silicon substrate. Therefore, by minimizing the space for installing the first integrated circuit chip 120, the volume of the acoustic device 40B can be reduced. Thereby, the acoustic device can be reduced in size and is advantageous for integration. In addition, due to the uneven structure 122, the first substrate 102 has an excellent heat dissipation property, and the heat generated from the first integrated circuit chip 120 and the sound wave generator 108 is quickly conducted to the outside world, and further the thermoacoustic effect is guaranteed. can do.

  In the manufacturing method of the loudspeaker 100 of the acoustic chip 40B, first, the first integrated circuit chip 120 is integrated on the substrate by microelectronic processing. Next, the concavo-convex structure 122 is etched. Finally, after the carbon nanotube structure is installed on the concavo-convex structure 122, the first electrode 104 and the second electrode 106 are installed. The microelectronic processing is one of epitaxy, diffusion processing, oxidation processing, ion implantation processing, etching, and the like. When the carbon nanotube structure, the first electrode 104, and the second electrode 106 are installed, the first integrated circuit chip 120 is not destroyed because a high temperature is not required.

  Further, an insulating layer 118 is provided on the first surface 101 of the silicon substrate. The insulating layer 118 has a single layer structure or a multilayer structure. In the case where the insulating layer 118 has a single-layer structure, the insulating layer 118 is provided only on the surface of the protrusion 1220 or is attached to the entire first surface 101 of the first substrate 102. Here, sticking means that the insulating layer 118 covers the bottom and side surfaces of the recess 1222 and the surface of the protrusion 1220. That is, the insulating layer 118 directly covers the recess 1222 and the protrusion 1220, and the undulating shape of the insulating layer 118 is the same as the undulating shape of the recess 1222 and the protrusion 1220. Thereby, in any case, the insulating layer 118 can insulate the first substrate 102 and the sound wave generator 108. The material of the insulating layer 118 is silica, silicon nitride, or a combination thereof, and other insulating materials may be used as long as the insulating layer 118 can insulate the first substrate 102 and the sound wave generator 108. The insulating layer 118 has a thickness of 10 nm to 2 μm, specifically 50 nm, 90 nm, or 1 μm. Further, when the material of the first substrate 102 is an insulating material, it is not necessary to provide the insulating layer 118. In this embodiment, the insulating layer 118 is continuous single-layer silicon, has a thickness of 1.2 μm, and covers the entire first surface 101 of the first substrate 102.

  In this embodiment, the sound wave generator 108 includes a plurality of carbon nanotube wires. The plurality of carbon nanotube wires are arranged in parallel with a space between each other to form a layered carbon nanotube structure. The extending direction of the carbon nanotube wire intersects with the extending direction of the recess 1222 and forms a specific angle. The extending direction of the carbon nanotube in the carbon nanotube wire is parallel to the extending direction of the carbon nanotube wire. Thereby, the plurality of carbon nanotube wires are suspended and installed at positions corresponding to the recesses 1222. The extending direction of the carbon nanotube wire is preferably perpendicular to the extending direction of the recess 1222. The distance between adjacent carbon nanotube wires is 1 μm to 200 μm. Preferably, it is 50 micrometers-150 micrometers. In this example, the distance between adjacent carbon nanotube wires is 120 μm, and the diameter of the carbon nanotube wires is 1 μm.

  In the method of manufacturing a plurality of carbon nanotube wires, first, a carbon nanotube film is placed on the first electrode 104 and the second electrode 106, and then the carbon nanotube film is cut by a laser so as to be parallel and spaced apart from each other. A plurality of installed carbon nanotube strips are formed. Finally, the carbon nanotube strip is contracted with an organic solvent to form a carbon nanotube wire.

  Referring to FIG. 15, the carbon nanotube strip is processed by the organic solvent to form a plurality of carbon nanotube wires that are spaced apart from each other. Both ends of the carbon nanotube wire are connected to the first electrode 104 and the second electrode 106, respectively. Thereby, the drive voltage of the sound wave generator 108 is decreased, and the stability of the sound wave generator 108 is improved. In FIG. 15, a dark part is a board | substrate and a white part is an electrode.

  In the process of treating the carbon nanotube strip with the organic solvent, the carbon nanotubes positioned at the protrusions 1220 are strongly fixed to the surface of the insulating layer 118 and are not basically contracted. Therefore, the carbon nanotube wire is favorably electrically connected to the first electrode 104 and the second electrode 106. In order to ensure that the carbon nanotube strip is favorably contracted to the carbon nanotube wire, the width of the carbon nanotube strip is between 10 μm and 50 μm. If the width of the carbon nanotube strip is wider than 10 μm to 50 μm, a tear may be formed in the process of contracting the carbon nanotube fill strip, which affects the thermoacoustic effect. In addition, when the width of the carbon nanotube strip is narrower than 10 μm to 50 μm, the carbon nanotube strip may be ruptured in the process of contracting, or the formed carbon nanotube wire may be thin, which may affect the service life of the sound wave generator. To do. Therefore, in this example, the width of the carbon nanotube strip is 30 μm, the diameter of the contracted carbon nanotube wire is 1 μm, and the distance between adjacent carbon nanotube wires is 120 μm. The width of the carbon nanotube strip is not limited, and the width of the carbon nanotube strip can be selected as necessary as long as the carbon nanotube wire normally generates sound. After the treatment with the organic solvent, the carbon nanotube wire is firmly attached to the surface of the first substrate 102, and the suspended portion is kept in a stretched state so that the carbon nanotube wire is not deformed during operation. Guarantee. This prevents the carbon nanotube wire from being deformed and affecting the thermoacoustic effect.

  FIGS. 17 and 18 show the sound generation effect of the acoustic chip 40 </ b> B with different depths of the recess 1222. The depth of the recess 1222 is preferably 100 μm to 200 μm. At this time, the loudspeaker 100 of the acoustic chip 40B reaches an acoustic frequency that can be heard even by the human ear, and has an excellent heat wavelength. Further, the first substrate 102 protects the sound wave generator 108 and at the same time secures a sufficient distance between the first substrate 102 and the sound wave generator 108. Due to the distance, the sound generated by the operation of the sound wave generator 108 is completely absorbed by the first substrate 102 and is not propagated to the surrounding medium, thereby preventing the sound volume from being lowered. In addition, it ensures that the sound wave generator 108 has an excellent acoustic effect for each acoustic frequency. If the depth of the recess 1222 is too deep, there is a problem of adversely affecting the acoustic effect of the sound wave generator 108.

(Example 11)
Referring to FIG. 19, the eleventh embodiment of the present invention provides an acoustic device 50. The acoustic device 50 according to the present embodiment includes a loudspeaker 100, a second integrated circuit chip 140, and a printed circuit board 130. The loudspeaker 100 and the second integrated circuit chip 140 are installed on the printed circuit board 130, and the loudspeaker 100 and the second integrated circuit chip 140 are electrically connected by the printed circuit board 130.

  The structure of the loudspeaker 100 according to the eleventh embodiment is basically the same as that of the loudspeaker 100 according to the first embodiment, except that the first electrode 104 and the second electrode 106 are printed by a conductive wire 110. This is a point that is electrically connected to a pad (not shown) on the surface of the substrate 130. The loudspeaker 100 is fixed to the printed circuit board 130 by an adhesive, or is fixed to the printed circuit board 130 by a removable method (for example, an insertion type).

The position where the second integrated circuit chip 140 is installed is not limited. The second integrated circuit chip 140 is preferably installed. The second integrated circuit chip 140 is fixed to the printed circuit board 130 by an adhesive, or is fixed to the printed circuit board 130 by a removable method (for example, insertion type). Further, since the second integrated circuit chip 140 includes a power amplification circuit and a DC bias circuit for the frequency electrical signal, the second integrated circuit chip 140 has a power amplification function and a DC bias function for the frequency electrical signal. As a result, the second integrated circuit chip 140 increases the input frequency electrical signal and then inputs it to the sound wave generator 108 and, at the same time, solves the problem of frequency multiplication of the frequency electrical signal by the DC bias. The second integrated circuit chip 140 may be a packaged chip or an unpackaged bare chip. The size and shape of the second integrated circuit chip 140 are not limited. Since the second integrated circuit chip 140 only realizes a power amplification function and a DC bias function, the structure of the internal circuit is simple and its area is smaller than 1 cm ² . For example, it is smaller than 49 mm ² , 25 mm ² , 9 mm ^2, or 9 mm ² . Thereby, the acoustic device 50 is reduced in size. In this embodiment, the second integrated circuit chip 140 is a packaged chip and has a plurality of pins 218. The integrated circuit chip 140 and the printed circuit board 130 are installed in a removable manner by the plurality of pins 218. The second integrated circuit chip 140 is electrically connected to the first electrode 104 and the second electrode 106 by lead wires inside the printed circuit board 130, respectively. When the acoustic device 50 is activated, the second integrated circuit chip 140 outputs a frequency electrical signal to the sound wave generator 108. With the output frequency electrical signal, the sound wave generator 108 intermittently heats the surrounding medium to thermally expand the surrounding medium, and performs heat exchange to generate sound waves.

  The printed circuit board 130 is formed by processing a laminate coated with a copper foil. Further, the loudspeaker 100 and the second integrated circuit chip 140 can be electrically connected by the printed circuit board 130 as necessary. A connector (not shown) is installed on the surface of the printed circuit board 130, and a plurality of lead wires (not shown) are installed inside the printed circuit board 130. The loudspeaker 100 and other electronic elements are installed or connected by the connector and a plurality of lead wires. The connector is integrated on the printed circuit board 130 and may be one or more of pads, pins, and insertion holes. The size and shape of the printed circuit board 130 are not limited and can be selected as necessary. The acoustic device 50 may be installed inside an electronic component (for example, a mobile phone, a computer, etc.), and the circuit of the electronic component and the printed board 130 may be electrically connected.

(Example 12)
Referring to FIG. 20, the twelfth embodiment of the present invention provides an acoustic device 60. The acoustic device 60 of this embodiment includes an acoustic chip 10A, a second integrated circuit chip 140, and a printed board 130. The second integrated circuit chip 140 is installed on the printed circuit board 130 by a plurality of pins 218, and the acoustic chip 10 </ b> A is installed on the printed circuit board 130 by pins 212. The acoustic chip 10 </ b> A and the second integrated circuit chip 140 are electrically connected by the printed circuit board 130.

  The structure of the acoustic device 60 according to the twelfth embodiment is basically the same as the structure of the acoustic device 50 according to the eleventh embodiment. The difference is that the acoustic device 60 includes a housing 200, and the housing 200 Has a space, and the loudspeaker 100 is accommodated in this space. The acoustic chip 10 </ b> A is placed on the printed circuit board 130 by two pins 212 outside the housing 200. In the present embodiment, the two pins 212 are a pin grid array, which is installed on the bottom surface of the second substrate 202 opposite to the loudspeaker 100, and is electrically connected to the first electrode 104 and the second electrode 106 by the conducting wire 110, respectively. Connected to.

(Example 13)
Referring to FIG. 21, Example 13 of the present invention provides an acoustic device 70A. The acoustic device 70A according to the present embodiment includes an acoustic chip 20A, a second integrated circuit chip 140, and a printed board 130. The integrated circuit chip 140 is installed on the printed circuit board 130 by a plurality of pins 218, and the acoustic chip 20 </ b> A is installed on the printed circuit board 130 by pins 212. The acoustic chip 20 </ b> A and the second integrated circuit chip 140 are electrically connected by the printed circuit board 130.

  The structure of the acoustic device 70A of the thirteenth embodiment is basically the same as the structure of the acoustic device 50 of the eleventh embodiment, except that the acoustic device 70A includes a casing 200, and the casing 200 is , Has a space and the loudspeaker 100 is accommodated in this space. The acoustic chip 20 </ b> A is installed on the printed board 130 by two pins 212. The two pins 212 are a pin grid array, are installed on the bottom surface of the second substrate 202 opposite to the loudspeaker 100, and are electrically connected to the first electrode 104 and the second electrode 106 by conducting wires 110, respectively.

(Example 14)
Referring to FIG. 22, Example 14 of the present invention provides an acoustic device 70B. The acoustic device 70B of the present embodiment includes an acoustic chip 20A, a second integrated circuit chip 140, a printed board 130, and an electronic element 150. The second integrated circuit chip 140 is installed on the printed circuit board 130 by a plurality of pins 218, and the acoustic chip 20 </ b> A is installed on the printed circuit board 130 by pins 212. Further, the acoustic chip 20 </ b> A and the second integrated circuit chip 140 are electrically connected by the printed circuit board 130.

  The structure of the acoustic device 70B of the fourteenth embodiment is basically the same as the structure of the acoustic device 70A of the thirteenth embodiment, except that the acoustic device 80 includes at least one electronic element 150, One electronic element 150 is installed on the printed circuit board 130. The electronic element 150 is a capacitance element, a resistance element, or the like. The type and quantity of the electronic element 150 can be selected as necessary. The electronic element 150 and the second integrated circuit chip 140 are connected to each other and support the operation of the loudspeaker 100.

(Example 15)
Referring to FIG. 23, a fifteenth embodiment of the present invention provides an acoustic device 80. The acoustic device 80 of the present embodiment includes an acoustic chip 20A, a second integrated circuit chip 140, and a printed circuit board 130. The second integrated circuit chip 140 is installed on the printed circuit board 130 by the plurality of pins 218, and the acoustic chip 20 </ b> A is installed on the printed circuit board 130 by the pins 212. Further, the acoustic chip 20 </ b> A and the second integrated circuit chip 140 are electrically connected by the printed circuit board 130.

  The structure of the acoustic device 80 of the fifteenth embodiment is basically the same as the structure of the acoustic device 70A of the thirteenth embodiment, except that the two pins 212 are surface-mount type, and the two pins Reference numeral 212 denotes a point installed at two corners in contact with the printed circuit board 130 of the housing 200. The two pins 212 are welded to the corresponding printed circuit board 130 pads.

(Example 16)
Referring to FIG. 24, a sixteenth embodiment of the present invention provides an acoustic device 90. The acoustic device 90 of the present embodiment includes an acoustic chip 40B, a second integrated circuit chip 140, and a printed board 130. The second integrated circuit chip 140 is installed on the printed circuit board 130 by a plurality of pins 218, and the acoustic chip 40 </ b> B is installed on the printed circuit board 130 by pins 212. Further, the acoustic chip 40 </ b> B and the second integrated circuit chip 140 are electrically connected by the printed circuit board 130.

  The structure of the acoustic device 90 according to the sixteenth embodiment is basically the same as the structure of the acoustic device 70A according to the thirteenth embodiment, except that the first surface 101 of the first substrate 102 has a plurality of uneven structures. 122, and the loudspeaker 100 includes a plurality of first electrodes 104 and a plurality of second electrodes 106.

  The acoustic chip and the acoustic device of the present invention have the following excellent points. First, since the loudspeaker is accommodated in the space, the carbon nanotube structure of the loudspeaker can be protected, so that the carbon nanotube structure is not broken by an external force. Secondly, the acoustic device can be connected to an external circuit by a pin, so that it is convenient to use and can be applied to a circuit board of a conventional electronic component. Third, the integrated circuit chip is installed on the printed board, and the loudspeaker is installed on the printed board by the board. At this time, the loudspeaker and the integrated circuit chip are electrically connected by the printed circuit board. As a result, the acoustic device has a simple structure and can be downsized, which is convenient for use.

10A, 10B, 10C, 20A, 20B, 20C, 30A, 30B, 40A, 40B Acoustic chip 50, 60, 70A, 70B, 80, 90 Acoustic device 100 Loudspeaker 101 First surface 102 First substrate 103 Second surface 104 First electrode 106 Second electrode 108 Sound wave generator 110 Conductor 114 Second recess 116 Third recess 118 Insulating layer 120 First integrated circuit chip 122 Uneven structure 1220 Projection 1222 Recess 130 Printed circuit board 140 Second integrated circuit chip 150 Electronic element 200 housing 202 second substrate 204 protective cover 206 annular side wall 208 bottom wall 210 opening 212, 218 pin 214 first recess 216 protective net

Claims (2)

An acoustic chip including a loudspeaker, a housing, and a first integrated circuit chip ,
The loudspeaker includes a first substrate, a sound wave generator, at least one first electrode, and at least one second electrode,
The first substrate has a first surface;
The sound wave generator is installed on a first surface of the first substrate;
The first substrate is made of silicon;
The first integrated circuit chip is directly installed on the first substrate by microelectronic processing,
The at least one first electrode and the at least one second electrode are spaced apart from each other and electrically connected to the sound wave generator;
The housing has a space, and the loudspeaker and the first integrated circuit chip are accommodated in the space,
The housing has at least one aperture, and the sound generator of the loudspeaker is installed to face the at least one aperture,
The housing has at least two pins, and the housing is electrically connected to the at least one first electrode and the at least one second electrode by the at least two pins .
A plurality of protrusions and a plurality of recesses are formed on the first surface of the first substrate, and the depth of the recesses is 100 μm to 200 μm . An acoustic device comprising: the acoustic chip according to claim 1; a second integrated circuit chip; and a printed board.
The acoustic chip is installed on the printed circuit board,
The second integrated circuit chip is disposed on the printed circuit board;
The acoustic device, wherein the acoustic chip and the second integrated circuit chip are electrically connected by the printed circuit board.