JP5551625B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

The present invention relates to a substrate processing apparatus that performs processing for fine processing on a surface of a substrate, and more particularly, a substrate processing apparatus and a substrate processing method for performing a series of processes by transferring a substrate to a processing apparatus of each process for each processing step. About.

Conventionally, production lines for semiconductor devices, FPDs (flat panel displays), solar cell panels, etc., collectively arrange various types of processing devices according to a series of processes, and process target substrates (semiconductor wafers, glass Many in-line system configurations are employed in which a series of process processing is performed by transferring a substrate or the like) to each processing apparatus in the order of the process flow. In particular, when the series of processes is a single wafer process in which substrates are processed one by one, such an in-line system can be easily adopted. That is, if the tact time per substrate is T _S and the required time for each single wafer process P _m is T _m , the single wafer process P _m includes a number N _i (where N _i is a natural number). , N _i ≧ T _m / T _S ), the single-wafer processing apparatus PU _m may be operated in parallel with the time difference of the tact time T _S.

  However, as the types and number of processes consolidated inline increase, the number of tasks of the transfer robot that handles the transfer of substrates between a plurality of processing apparatuses increases, making it impossible to keep up with the tact. Therefore, the in-line system is divided into a plurality of areas, each substrate is transferred to one transfer robot by each transfer robot, and between adjacent areas, both transfer robots are connected via a fixed substrate relay stand. A method of exchanging substrates is employed (see, for example, Patent Document 1).

JP 2001-319852 A

  In the in-line system in which a plurality of transfer robots exchange substrates via a stationary substrate relay as described above, the substrate receiving side after the substrate transfer robot places the substrate on the substrate relay table. The transfer robot moves the substrate away from the substrate relay stand. However, from another viewpoint, after the substrate receiving robot carries the substrate away from the substrate relay stand, the substrate transferring side transfer robot places another substrate on the substrate relay stand.

  In short, what is important here is that the operation of the substrate transfer robot placing the substrate on the substrate relay table and the operation of the substrate receiving robot removing the substrate from the substrate relay table cannot be performed simultaneously. That is. Both transfer robots must perform their own transfer tasks independently, but when exchanging boards between the two, they must check the board relay stand availability and, in some cases, need interrupt control. Become. As a result, not only the transfer efficiency is lowered, but also the control program (software) of the transfer robot is enormous and expensive.

  Furthermore, in an in-line system in which a large number or other types of processing devices are arranged horizontally in the order of the process flow, each transfer robot not only moves the transfer arm up and down, swivels, and moves back and forth, but also the robot body in the system. It moves in the horizontal direction along the rails laid on. As described above, when the multi-axis and heavy transport robot performs horizontal movement, there is a concern that the transport speed or transport efficiency of the substrate may be further reduced, and particles may be generated or rolled up.

  The above problems can also be seen in other system configurations. For example, when a single wafer processing device and a batch processing device are mixed, it is much more difficult to align each tact. Therefore, a plurality of transfer robots are linked via the above-described substrate relay stand. The disadvantage of this method is more remarkable, and it is very difficult to construct an inline system.

The present invention solves the problems of the prior art as described above, and a series of processes applied to a substrate is performed efficiently and with a high throughput regardless of the type of single wafer processing or batch processing. A substrate processing apparatus and a substrate processing method are provided.

  Here, the first transport mechanism may stack one substrate while either the first or second shuttle stays at the first or second loading position. The second transport mechanism only needs to unload one substrate while either the first or second shuttle stays at the first or second unloading position. Each transport mechanism may directly transfer or transfer the substrate in accordance with the regular and periodic reciprocal movements of the first and second shuttles, and cares about the exit or status of the counterpart transport mechanism. There is no need to make it.

A substrate processing apparatus according to a first aspect of the present invention includes first and second transport paths having an arbitrary length and extending in parallel with each other in a horizontal direction, and a loading platform on which one substrate is loaded. A first reciprocally movable on the first conveyance path between a first loading position provided at one end of the conveyance path and a first unloading position provided at the other end of the first conveyance path. A second loading position provided at one end of the second conveyance path; and a second unloading position provided at the other end of the second conveyance path. And a second shuttle that can reciprocate on the second transport path, and one end near the first and second unloading positions, from there to any length, parallel to each other in the horizontal direction A third and a fourth transport path extending in the direction and a loading platform on which a single substrate is loaded, provided at one end of the third transport path. A third shuttle that can reciprocate on the third transport path between a third loading position that is provided and a third unloading position that is provided at the other end of the third transport path; A loading platform for stacking sheets; and a fourth loading position provided at one end of the fourth transport path and a fourth unloading position provided at the other end of the fourth transport path. A fourth shuttle capable of reciprocating on four transport paths, and one or a plurality of second shuttles for transporting a substrate in the first area, the first and second loading positions being accessible. A first transport mechanism having one transport arm, the first and second unloading positions, and the third and fourth unloading positions are provided so as to transport the substrate within the second area. each independently have a least two second carrier arm rotatable in the azimuthal direction for A third transport mechanism and a third transport arm provided to be accessible to the third and fourth unloading positions and having one or a plurality of third transport arms for transporting the substrate in the third area. In order to perform a desired single wafer process or batch process on the substrate, the transfer mechanism and a processing unit disposed in at least one of the first, second, and third areas are provided.

In the substrate processing apparatus of the first aspect, the first transport mechanism by using the first transfer arm, one by one the substrate in the first or second shuttle in the first or second product unloading position Pile up. The second transport mechanism uses the second transport arm to unload the substrates one by one from the first or second shuttle at the first or second unloading position, and at the third or fourth unloading position. Stack substrates one by one on the third or fourth shuttle. Then, the third transport mechanism uses the third transport arm to unload the substrates one by one from the third or fourth shuttle at the third or fourth unloading position. Thus, transporting the substrate from the first loading position to the first unloading position by the first shuttle, transporting the substrate from the second loading position to the second unloading position by the second shuttle, The transfer of the substrate from the third loading position to the third unloading position by the third shuttle and the transfer of the substrate from the fourth loading position to the fourth unloading position by the fourth shuttle are performed. Done independently.

Here, the first transport mechanism may stack one substrate while either the first or second shuttle stays at the first or second loading position. The second transport mechanism unloads one board while either the first or second shuttle stays at the first or second unloading position, and either the third or fourth shuttle One substrate may be stacked while staying at the third or fourth loading position. The third transport mechanism only needs to unload one substrate while either the third or fourth shuttle stays at the third or fourth unloading position. Each transport mechanism may directly transfer and transfer the substrate in accordance with the regular and periodic reciprocal movements of a pair of shuttles on the upstream side and / or downstream side thereof. Or you don't have to worry about the situation. In particular, since the second transport mechanism includes at least two second transport arms that can independently rotate in the azimuth direction, the first or second shuttle at the first or second unloading position. The operation of unloading one substrate from either of the above and the operation of loading one substrate on either the third or fourth shuttle at the third or fourth loading position are performed simultaneously or in parallel. Can do. This greatly improves the throughput of the operation of transporting the substrate from the first transport mechanism to the third transport mechanism through the second transport mechanism in the course of performing desired single-side processing or batch processing on the substrate. Can do.

A substrate processing apparatus according to a second aspect of the present invention is provided on a transfer line for transferring a substrate to be processed in a horizontal direction from the upstream side to the downstream side of the process flow, and disposed around the transfer line. A first transport mechanism having one or a plurality of first transport arms for transferring the substrate to the first processing unit one by one, and downstream of the first transport mechanism on the transport line A second processing arm provided on the side and having at least two second transfer arms each capable of independently rotating in an azimuth direction for transferring one substrate at a time to a second processing unit disposed around the substrate. A first unloading position adjacent to the second transport mechanism from a first and a second loading position adjacent to the first transport mechanism, constituting a section of the transport mechanism and the transport line; Stack one board each First and second shuttle reciprocally movable for individually single wafer transport in, and constitute a section of the conveying line, the third and fourth product unloading position adjacent to the second conveying mechanism The third and fourth shuttles are capable of reciprocating to stack the substrates one by one to the third and fourth unloading positions adjacent to the three transport mechanisms and individually transport the sheets.

In the substrate processing apparatus according to the second aspect , the first transport mechanism uses the first transport arm to place the substrates one by one on the first or second shuttle at the first or second loading position. Pile up. The second transport mechanism uses the second transport arm to unload the substrates one by one from the first or second shuttle at the first or second unloading position, and at the third or fourth unloading position. Stack substrates one by one on the third or fourth shuttle. Then , the substrate is transported from the first loading position by the first shuttle to the first unloading position, and the substrate sheet from the second loading position by the second shuttle to the second unloading position. Leaf conveyance is performed independently. Therefore, the first transport mechanism only needs to stack one substrate while either the first or second shuttle stays at the first or second loading position. The second transport mechanism only needs to unload one substrate while either the first or second shuttle stays at the first or second unloading position. Each transport mechanism may directly transfer or transfer the substrate in accordance with the regular and periodic reciprocal movements of the first and second shuttles, and cares about the exit or status of the counterpart transport mechanism. There is no need to make it. In particular, since the second transport mechanism includes at least two second transport arms that can independently rotate in the azimuth direction, the first or second shuttle at the first or second unloading position. The operation of unloading one substrate from either of the above and the operation of loading one substrate on either the third or fourth shuttle at the third or fourth loading position are performed simultaneously or in parallel. Can do. This greatly improves the throughput of the operation of transporting the substrate from the first transport mechanism to the third transport mechanism through the second transport mechanism in the course of performing desired single-side processing or batch processing on the substrate. Can do.

A substrate processing method according to a first aspect of the present invention includes first and second transport paths having an arbitrary length and extending in parallel with each other in the horizontal direction, and a loading platform on which a single substrate is loaded. A first reciprocally movable on the first conveyance path between a first loading position provided at one end of the conveyance path and a first unloading position provided at the other end of the first conveyance path. A second loading position provided at one end of the second conveyance path; and a second unloading position provided at the other end of the second conveyance path. And a second shuttle that can reciprocate on the second transport path, and one end near the first and second unloading positions, from there to any length, parallel to each other in the horizontal direction A third and a fourth transport path extending in the direction and a loading platform on which a single substrate is loaded, provided at one end of the third transport path. A third shuttle that can reciprocate on the third transport path between a third loading position that is provided and a third unloading position that is provided at the other end of the third transport path; A loading platform for stacking sheets; and a fourth loading position provided at one end of the fourth transport path and a fourth unloading position provided at the other end of the fourth transport path. A fourth shuttle capable of reciprocating on four transport paths, and one or a plurality of second shuttles for transporting a substrate in the first area, the first and second loading positions being accessible. A first transport mechanism having one transport arm, the first and second unloading positions, and the third and fourth unloading positions are provided so as to transport the substrate within the second area. Each having at least two second transfer arms that are independently rotatable in the azimuth direction. A third transport mechanism and a third transport arm provided to be accessible to the third and fourth unloading positions and having one or a plurality of third transport arms for transporting the substrate in the third area. In the substrate processing apparatus, comprising: a transport mechanism; and a processing unit disposed in at least one of the first, second, and third areas to perform a desired single wafer processing or batch processing on the substrate. One transport mechanism is used to stack the substrates one by one on the first or second shuttle at the first or second unloading position using the first transport arm, and the second transport mechanism The second transfer arm is used to unload the substrates one by one from the first or second shuttle at the first or second unloading position, and the second transfer mechanism allows the second transfer to be performed. Using the arm, the third or fourth product The substrates are stacked one by one on the third or fourth shuttle at the exit position, and the third transport mechanism is used at the third or fourth unloading position by the third transport mechanism. Alternatively, the substrates are unloaded one by one from the fourth shuttle, the substrates are transported from the first loading position to the first unloading position by the first shuttle, and the second shuttle is used by the second shuttle. Substrate transfer from the loading position to the second unloading position, transfer of the substrate from the third loading position to the third unloading position by the third shuttle, and the fourth shuttle The substrate is transferred independently from the fourth loading position to the fourth unloading position.

In the substrate processing method according to the first aspect, as described above, the single-wafer transfer of the substrate from the first loading position to the first unloading position by the first shuttle and the second by the second shuttle. Single substrate transfer from the unloading position to the second unloading position, single substrate transfer from the third unloading position to the third unloading position by the third shuttle, and the fourth shuttle. The substrate is transported independently from the fourth loading position to the fourth unloading position.

Here, the first transport mechanism may stack one substrate while either the first or second shuttle stays at the first or second loading position. The second transport mechanism unloads one board while either the first or second shuttle stays at the first or second unloading position, and either the third or fourth shuttle One substrate may be stacked while staying at the third or fourth loading position. The third transport mechanism only needs to unload one substrate while either the third or fourth shuttle stays at the third or fourth unloading position. Each transport mechanism may directly transfer and transfer the substrate in accordance with the regular and periodic reciprocal movements of a pair of shuttles on the upstream side and / or downstream side thereof. Or you don't have to worry about the situation. In particular, since the second transport mechanism includes at least two second transport arms that can independently rotate in the azimuth direction, the first or second shuttle at the first or second unloading position. The operation of unloading one substrate from either of the above and the operation of loading one substrate on either the third or fourth shuttle at the third or fourth loading position are performed simultaneously or in parallel. Can do. This greatly improves the throughput of the operation of transporting the substrate from the first transport mechanism to the third transport mechanism through the second transport mechanism in the course of performing desired single-side processing or batch processing on the substrate. Can do.

A substrate processing method according to a second aspect of the present invention includes a transfer line for transferring a substrate to be processed in a horizontal direction from the upstream side to the downstream side of the process flow, and a transfer line provided on the transfer line. A first transport mechanism having one or a plurality of first transport arms for transferring the substrate to the first processing unit one by one, and downstream of the first transport mechanism on the transport line And at least two second transport mechanisms that can be rotated independently in the azimuth direction, each of which transfers the substrate one by one to the second processing unit disposed around the second processing unit, and the transport line Each of the first and second unloading positions adjacent to the first transport mechanism to the first and second unloading positions adjacent to the second transport mechanism. Stacked and transported individually The movable first and second shuttles constitute a section of the transport line, and the third and fourth loading positions adjacent to the second transport mechanism are adjacent to the third transport mechanism. In the substrate processing apparatus having the third and fourth shuttles that can be reciprocated to stack the substrates one by one to the third and fourth unloading positions and individually transport the wafers, the first transport mechanism allows the Using the first transport arm, the substrates are stacked one by one on the first or second shuttle at the first or second loading position, and the second transport arm is used to stack the second transport arm. The first or second unloading position is used to unload the substrates one by one from the first or second shuttle, and the second transfer mechanism is used to move the substrates one by one using the second transfer arm. The third or fourth at the third or fourth loading position; Gain one by one the substrate in the fourth shuttle.

In the substrate processing method of the second aspect, the substrate is transported from the first loading position by the first shuttle to the first unloading position, and from the second loading position by the second shuttle. The substrate can be transferred to the second unloading position independently. Therefore, the first transport mechanism only needs to stack one substrate while either the first or second shuttle stays at the first or second loading position. The second transport mechanism only needs to unload one substrate while either the first or second shuttle stays at the first or second unloading position. Each transport mechanism may directly transfer or transfer the substrate in accordance with the regular and periodic reciprocal movements of the first and second shuttles, and cares about the exit or status of the counterpart transport mechanism. There is no need to make it. In particular, since the second transport mechanism includes at least two second transport arms that can independently rotate in the azimuth direction, the first or second shuttle at the first or second unloading position. The operation of unloading one substrate from either of the above and the operation of loading one substrate on either the third or fourth shuttle at the third or fourth loading position are performed simultaneously or in parallel. Can do. This greatly improves the throughput of the operation of transporting the substrate from the first transport mechanism to the third transport mechanism through the second transport mechanism in the course of performing desired single-side processing or batch processing on the substrate. Can do.

According to the substrate processing apparatus or the substrate processing method of the present invention, with the configuration and operation as described above, a series of processing performed on a substrate can be efficiently performed by a new substrate transport method regardless of the type of single wafer processing or batch processing. In addition, it can be performed with high throughput.

It is a top view which shows the layout on the system of the substrate processing apparatus in one Embodiment of this invention. It is a figure which shows the movable range of the conveyance arm of the single wafer conveyance mechanism integrated in the said substrate processing apparatus. It is a perspective view which shows the structure of the said single wafer conveyance mechanism. It is a perspective view which shows the structure of the shuttle conveyance part integrated in the said substrate processing apparatus. It is a figure which shows typically the 1st type of the single wafer processing unit incorporated in the said substrate processing apparatus. It is a figure which shows typically the 2nd type of the single wafer processing unit incorporated in the said substrate processing apparatus. It is a figure which shows the mode of each part at the time of taking in / out a board | substrate in the 1st type single wafer processing unit. It is a figure which shows the mode of each part at the time of taking in / out a board | substrate in the 2nd type single wafer processing unit. It is a figure which shows typically the 3rd type of the single wafer processing unit incorporated in the said substrate processing apparatus. It is a figure which shows typically the structure of the batch type baking unit integrated in the said substrate processing apparatus. It is a figure which shows each step | level of operation | movement in which the said single wafer conveyance mechanism takes in / out a board | substrate with respect to each processing unit. It is a figure which shows each step | level of operation | movement in which the said single wafer conveyance mechanism takes in / out a board | substrate with respect to each processing unit. It is a figure which shows each step | level in case the said sheet | seat conveyance mechanism performs simultaneously the operation | movement which drops a board | substrate from the upper shuttle of an upstream, and the operation | movement which loads a board | substrate on a downstream lower shuttle. It is a figure which shows each step | level in case the said sheet | seat conveyance mechanism performs simultaneously the operation | movement which drops a board | substrate from the lower shuttle of an upstream, and the operation | movement which loads a board | substrate on the upper shuttle of a downstream. It is a figure which shows each step in the case where the said single wafer conveyance mechanism performs operation | movement which drops a board | substrate from the lower shuttle of an upstream, and the operation | movement which loads a board | substrate on an upper shuttle of a downstream sequentially. It is a figure which shows each step in the case where the said single wafer conveyance mechanism performs operation | movement which drops a board | substrate from the lower shuttle of an upstream, and the operation | movement which loads a board | substrate on an upper shuttle of a downstream sequentially. It is a figure which shows a series of transfer operation | movement procedures of the said single wafer conveyance mechanism in a 1st transfer form. It is a figure which shows a series of transfer operation | movement procedures of the said single wafer conveyance mechanism in a 2nd transfer form. It is a figure which shows a series of transfer operation | movement procedures of the said single wafer conveyance mechanism in a 3rd transfer form. It is a figure which shows the cycle of the batch baking process and board | substrate replacement | exchange operation | movement in a pair of said batch type baking unit. It is a top view which shows the layout of the processing system which integrates and implements all the processes of the manufacturing process of a dye-sensitized solar cell (FIG. 17). It is a longitudinal cross-sectional view which shows the basic structure of a dye-sensitized solar cell.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 shows a system configuration of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is used, for example, in a process for producing in-line a laminated assembly on the transparent substrate side before being bonded to the counter electrode (anode) in a manufacturing process of a dye-sensitized solar cell as shown in FIG. .

  In this dye-sensitized solar cell, as a basic structure, a porous semiconductor fine particle layer 204 carrying an sensitizing dye and an electrolyte layer 206 are sandwiched between a transparent electrode (cathode) 200 and a counter electrode (anode) 202. Yes. Here, the semiconductor fine particle layer 204 is divided into cell units together with the transparent electrode 200, the electrolyte layer 206 and the counter electrode 202, and is formed on the transparent substrate 208 via the transparent electrode 200. The counter electrode 202 is formed on the counter substrate 210 via the base electrode 205. The transparent electrode 200 of each cell is electrically connected to the adjacent counter electrode 202, and a large number of cells are electrically connected in series or in parallel in the entire module.

  In the dye-sensitized solar cell having such a configuration, when visible light is irradiated from the back side of the transparent substrate 208, the dye supported on the semiconductor fine particle layer 204 is excited and emits electrons. The emitted electrons are guided to the transparent electrode 200 through the semiconductor fine particle layer 204 and sent out to the outside. The sent electrons return to the counter electrode 202 via an external circuit (not shown), and are received again by the dye in the semiconductor fine particle layer 204 via ions in the electrolyte layer 206. In this way, light energy is immediately converted into electric power and output.

In the substrate processing apparatus of this embodiment, the transparent substrate 208 on which the transparent conductive layer of the blanket before the transparent electrode 200 is patterned is input as the unprocessed substrate G. For each substrate G, a series of main processes such as patterning of the transparent electrode 200, film formation of the semiconductor fine particle layer 204, baking, and adsorption of the dye to the porous semiconductor fine particle layer 204, and subs associated with these main processes. Processes (cleaning treatment, heat treatment, etc.) are sequentially performed in-line. As a result, a laminated assembly (208/200/204) on the transparent substrate 208 side before being bonded to the counter electrode (anode) 202 is produced. Then, the laminated assembly on the transparent substrate 208 side is dispensed as a processed substrate G toward another substrate processing apparatus responsible for the next process. The substrate G in this embodiment has a quadrangular or rectangular shape.

[Configuration of the entire device]

  In FIG. 1, this substrate processing apparatus has a horizontally long process station 10 disposed at the center of a system, and a loader 12 and an unloader 14 are connected to both ends in the longitudinal direction (X direction).

  The loader 12 is a port that carries unprocessed substrates G in a cassette unit from, for example, a self-propelled transport vehicle, and stores a cassette C that stores a plurality of (for example, 25) unprocessed substrates G stacked vertically in a horizontal posture. A plurality of cassette stages 16 placed side by side in the system width direction (Y direction), and substrates G are taken out from one of the cassettes C on the stage 16 as a unit, and the taken out substrates G are loaded into the process station 10. A loader transport mechanism 18. The loader transport mechanism 18 includes a main body 18a that moves on three axes of Y, Z, and θ, and a single transport arm 18b that can move forward and backward or extend and retract on the main body 18a. The substrate G can be exchanged through the stationary substrate relay stand 20 with the 10 side.

  The unloader 14 is a port for delivering processed substrates G in cassette units to, for example, a self-propelled transport vehicle. The unloader 14 is a system for storing cassettes C in which a plurality of (25) processed substrates G are stacked vertically and stored in a horizontal posture. There are provided a cassette stage 22 that is placed side by side in the width direction (Y direction), and an unloader transport mechanism 24 that stores processed substrates G one by one in any cassette C on the stage 22. The unloader transport mechanism 24 includes a main body 24a that moves on three axes of Y, Z, and θ, and a single transport arm 24b that can move forward and backward or extend and retract on the main body 24a. The substrate G can be exchanged via the 10 side and the stationary substrate relay table 26.

  The process station 10 has a transfer line 28 that extends straight from the loader 12 toward the unloader 14 in the longitudinal direction of the system (X direction), and many and many types of processing units to be described later on both left and right sides of the transfer line 28. 44-54 are arranged.

  On the transport line 28, a plurality (four in the illustrated example) of single wafer transport mechanisms 30, 32, 34, 36 and a plurality (three) of shuttle transport units 38, 40, 42 are alternately arranged in a line. Is arranged.

  More specifically, the first single wafer transfer mechanism 30 is located on the uppermost stream on the transfer line 28 with respect to the process flow, and is sandwiched between the substrate relay stand 20 adjacent to the loader 12 and the first shuttle transfer unit 38. ing. One or a plurality of single-wafer cleaning units 44 for cleaning the surface to be processed of the substrate G one by one, and a first area extending on both the left and right sides of the first single-wafer transport mechanism 30 and 1 One or a plurality of single-wafer patterning units 46 for patterning the transparent conductive layer on the surface to be processed of the substrate G to the transparent electrode 200 one by one are arranged. Note that this applies to all single-wafer processing units. However, when a plurality of identical single-wafer processing units are arranged in this substrate processing apparatus, a configuration in which the plurality of units are stacked vertically is preferably employed. be able to.

  The second sheet transport mechanism 32 is located downstream of the first sheet transport mechanism 30 on the transport line 28 and is sandwiched between the first shuttle transport unit 38 and the second shuttle transport unit 40. ing. In order to form a semiconductor fine particle layer (working electrode) 204 on the surface to be processed of the substrate G one by one in the second area spreading on both the left and right sides of the second sheet transport mechanism 32 (for example, by printing). One or a plurality of single-wafer-type working electrode film forming units 48 and one or a plurality of single-wafer-type heat treatment units 50 for baking the surface to be processed of the substrate G after coating one by one. Has been.

  The third sheet transport mechanism 34 is located on the downstream side of the second sheet transport mechanism 32 on the transport line 28 and is sandwiched between the second shuttle transport unit 40 and the third shuttle transport unit 42. ing. In the third area spreading on both the left and right sides of the third single wafer transport mechanism 34, a plurality of (eg, 100) semiconductor fine particle layers (working electrodes) 204 formed on the substrate G are baked together. A pair of batch-type firing units 52A and 52B are disposed.

  The fourth sheet transport mechanism 36 is located on the transport line 28 on the downstream side of the third sheet transport mechanism 34 and is sandwiched between the third shuttle transport unit 42 and the substrate relay stand 26 adjacent to the unloader 14. It is. In a fourth area extending on both the left and right sides of the fourth single-wafer transport mechanism 36, 1 for adsorbing the sensitizing dye to the porous semiconductor fine particle layer (working electrode) 204 formed on the substrate G is provided. One or a plurality of single-wafer type dye adsorption units 54 are arranged.

  2 and 3 show the configuration of the second single wafer transport mechanism 32 and the transport arm movable range. The first, third, and fourth sheet transport mechanisms 30, 34, and 36 also have the same configuration and function as the second sheet transport mechanism 32.

  The single-wafer transport mechanism 32 is rotatable in the azimuth direction (θ direction) and can be moved up and down in the vertical direction (Z direction), and is capable of independently moving in a horizontal direction and retracting and retracting horizontally. Has ML. More specifically, as shown in FIG. 3, the single-wafer transport mechanism 32 includes two upper and lower transport bodies 60U and 60L on a lift drive shaft 58 of a stationary lift drive unit 56 having a linear motor or a ball screw mechanism, for example. The transport main bodies 60U and 60L are attached to the steps so as to be movable up and down, and are configured so that the transport main bodies 60U and 60L can be independently rotated in any direction in the azimuth direction (θ direction) on the lift drive shaft 58. Above, both transfer arms MU and ML are configured to be able to advance / retreat or extend / contract independently. Each of the transfer arms MU and ML is configured to be able to detachably mount, carry or hold one rectangular substrate G one by one.

  As shown in FIG. 2, the single-wafer transport mechanism 32 having such a configuration includes arbitrary processing units A (single-wafer working electrode film forming unit 48) and B (single-wafer heat treatment) disposed in the second area. The unit 50) and the upper shuttle JSU / lower shuttle JSL on the upstream side (first shuttle transport unit 38) and the upper shuttle KSU / lower shuttle KSL on the downstream side (second shuttle transport unit 40) can be accessed. Thus, the exchange of the substrate G can be performed one by one at each access destination.

  Note that the stationary substrate relay stand 20 is replaced with the upstream shuttle JSU / JSL for the first single-wafer transport mechanism 30 located on the uppermost stream of the transport line 28. In this substrate relay stand 20, a pair of placement tables 20U and 20L that can horizontally support a single substrate G placed on a plurality of support pins or elevating pins are arranged in two layers. When viewed from the first sheet transport mechanism 30, the upper mounting table 20 </ b> U corresponds to the upstream upper shuttle JSU that is stationary at the unloading position, and the lower mounting table 20 </ b> L is the upper lower part that is stationary at the unloading position. Corresponds to shuttle JSL.

Further, the stationary substrate relay stand 26 is replaced with the downstream shuttle KSU / KSL for the fourth single-wafer transport mechanism 36 located on the most downstream side of the transport line 28. Similarly to the substrate relay table 20, the substrate relay table 26 is also arranged by stacking a pair of mounting tables 26U and 26L that can horizontally support a single substrate G on a plurality of support pins or lift pins. doing. When viewed from the fourth sheet transport mechanism 36, the upper mounting table 26U corresponds to the downstream upper shuttle KSU that is stationary at the loading position, and the lower mounting table 26L is the downstream side that is stationary at the loading position. Corresponds to the lower shuttle KSL.

[Configuration of shuttle transport unit]

  FIG. 4 shows the configuration of the first shuttle transport unit 38 and the shuttle movable range. The second and third shuttle transport units 40 and 42 have the same configuration and function as the first shuttle transport unit 38.

  As shown in the figure, the shuttle transport unit 38 includes upper and lower transport paths 62 and 64 that extend in parallel with an arbitrary length in the longitudinal direction of the system (X direction) with a certain interval or space in the vertical direction. The upper and lower shuttles SU and SL move linearly independently on the transport paths 62 and 64. Each shuttle SU, SL has a loading platform 66 on which one substrate G is horizontally loaded. The loading platform 66 is provided with a holding portion 68 that holds the four corners of the substrate G, and a plurality of lifting pins 70 that lift and lower the substrate G in a horizontal posture when the substrate G is unloaded (loading / unloading). Yes. Each shuttle SU, SL moves straightly using a motor or cylinder or the like as a drive source and using a linearly movable mechanism such as an LM guide, a ball screw, or a belt.

  Upper and lower unloading positions FU and FL where the shuttles SU and SL stop and temporarily stay for loading the substrate G are respectively located at the upstream end portions (left side in the drawing) of the transport paths 62 and 64. Is provided. Meanwhile, upper and lower unloading positions WU, WL at which both shuttles SU, SL stop and temporarily stay for wholesale of the substrate G are located at the downstream end (right side in the drawing) of the transport paths 62, 64. Each is provided.

The upper shuttle SU, after staying in position FU out top product for a certain time T _FU for product unloading of the substrate G, a constant velocity or at a constant travel time in the forward direction (X direction) on the upper conveying path 62 When it moves straight and reaches the upper unloading position WU at the end point, it stops there and stays for a certain time T _WU for unloading the substrate G. Then, after the stay time T _WU elapses, the vehicle moves straight from the upper unloading position WU on the upper conveyance path 62 in the backward direction (−X direction) at a constant speed or a constant traveling time in an empty state without a substrate, When it reaches the final upper loading position FU, it stops there and stays for a certain time _TFU for loading a new substrate G. Upper shuttle SU is adapted to repeat the series of operations consisting of Sekide-forward movement, unloading-backward movement as described above at a constant cycle, i.e. 2T _S. Here, T _S is the cycle time of the entire system in the substrate processing apparatus.

Similarly, the lower shuttle SL stays for a certain time T _FL for loading the substrate G at the lower loading position FL, and then moves straight on the lower transport path 64 at a constant speed in the forward direction (X direction). Then, when reaching the lower end unloading position WL, it stops there and stays for a certain time T _WL for unloading the substrate G. Then, after the stay time T _WL elapses, the vehicle moves straight from the lower unloading position WL on the lower conveyance path 64 in the backward direction (−X direction) at a constant speed or a constant traveling time in an empty state without a substrate, When it reaches the lower end loading position FL, it stops there and stays for a certain time T _FL for loading a new substrate G. Lower shuttle SL also has to repeat a series of operations consisting of Sekide-forward movement, unloading-backward movement as described above at a constant cycle, i.e. 2T _S.

The reciprocating operation of the upper shuttle SU and the reciprocating operation of the lower shuttle SL are in a reverse cycle or reverse phase relationship. That is, when the upper shuttle SU stays at the upper loading position FU for loading the substrate G, the lower shuttle SL stays at the lower loading position WL for the same time for unloading the substrate G. That is, T _FU = T _WL . When the upper shuttle SU is loaded with the substrate G and moves straight on the upper transport path 62 from the upper loading position FU toward the upper unloading position WU in the forward direction (X direction) at a constant speed or a constant traveling time. At the same time, the lower shuttle SL is empty with no substrate loaded, and the same speed or the same traveling time in the backward direction (−X direction) on the lower conveyance path 64 from the lower unloading position WL toward the lower loading position FL. Move straight on.

When the upper shuttle SU stays at the upper unloading position WU for unloading the substrate G, the lower shuttle SL stays at the lower unloading position FL for the same time for loading the substrate G. That is, T _FL = T _WU . When the lower shuttle SL is loaded with the substrate G and moves straight on the lower transport path 64 from the lower loading position FL to the lower unloading position WL in the forward direction (X direction) at a constant speed or a constant traveling time. Is the same speed or the same traveling time in the return direction (−X direction) on the upper conveyance path 62 from the upper unloading position WU toward the upper loading position FU in the empty state where the upper shuttle SU is not loaded with the substrate. Move straight on. In short, there is a relationship of T _FU = T _WL = T _FL = T _WU .

As described above, in the substrate processing apparatus of this embodiment, the single wafer transfer of the substrate G from the upper unloading position FU to the upper unloading position WU by the upper shuttle SU, and the lower unloading position from the lower unloading position FL by the lower shuttle SL. The single wafer conveyance of the substrate G to the WL is alternately performed every tact time T _S. Then, such alternate sheet transport by the upper shuttle SU and the lower shuttle SL is performed simultaneously, that is, synchronously, between the first, second, and third shuttle transport units 38, 40, and 42. It has become.

[Processing unit configuration]

  FIG. 5A and FIG. 5B show the types of single wafer processing units incorporated in the substrate processing apparatus of this embodiment.

  In the first type shown in FIG. 5A, a substrate G is placed horizontally on a stage 74 provided at the center of a processing chamber or chamber 72, and a head 76 that can move in the horizontal and vertical directions above the stage 74 is provided. The required single wafer processing is performed on the front surface (surface to be processed) of the substrate G. For example, a single wafer cleaning unit 44 using a brush scrubber cleaning device or an ultraviolet cleaning device, a single wafer patterning unit 46 using a laser etching device, a single wafer working electrode film forming unit 48 using a screen printer, a nozzle The single-wafer type dye adsorbing unit 54 using the type dye adsorbing apparatus is the first type. In that case, a rotating brush is mounted on the head 76 of the brush scrubber cleaning device, an ultraviolet lamp is mounted on the head 76 of the ultraviolet cleaning device, a laser emitting unit is mounted on the head 76 of the laser etching device, and a screen printing machine. A squeegee or the like is mounted on the head 76, and the nozzle 76 of the nozzle-type dye adsorption device has a nozzle whose slit nozzle discharge port length is substantially equal to that of the substrate G, or a cylinder or slit corresponding to each semiconductor particle layer. A nozzle having a plurality of discharge ports such as a circular shape or a circular shape is mounted.

  In the second type shown in FIG. 5B, a substrate G is horizontally mounted on a spin chuck 82 coupled to a rotation driving unit 80 provided at the center of a processing chamber or chamber 78 and is rotatably held. The required single wafer processing is performed on the front surface (surface to be processed) of the substrate G using the head 84 that can move in the horizontal and vertical directions above the substrate 82. For example, the single-wafer type dye adsorption unit 54 using a nozzle type dye adsorption apparatus is the second type. Further, the case where a jet scrubber cleaning device is used for the single wafer cleaning unit 44 and a wet etching device is used for the single wafer patterning unit 46 are also of the second type. In that case, the nozzle 84 for ejecting the dye solution is mounted on the head 84 of the nozzle type dye adsorbing apparatus, the nozzle 84 for ejecting the cleaning liquid is mounted on the head 84 of the jet scrubber cleaning apparatus, and the head 84 of the wet etching apparatus is mounted on the head 84. A nozzle for discharging an etching solution is mounted.

  FIGS. 6A and 6B show substrate loading / unloading operations in the first and second types of single-wafer processing units.

In the first type (FIG. 6A), when the substrate G _i processed on the stage 74 and the substrate G _j to be processed next are exchanged, the plurality of lifting pins 86 are first raised from the stage 74 ( The processed substrate G _i is lifted up. There, the transfer arm empty state from the substrate entrance 75 of the side wall of the processing chamber 72 (e.g. the upper transport arm MU) is come into the processing chamber 72, receives the processed substrates G _i from the lifting pin 86, The received substrate G _i is taken out of the processing chamber 72. The raising / lowering pin 86 once falls. Immediately after, the single wafer processing lower transport arm ML next holding the substrate G _j should receive single wafer processing in units is come into the processing chamber 72, immediately after the increase lift pin 86 is again And this board _| substrate _Gj is received. Then, after the lower transfer arm ML in an empty state goes out of the processing chamber 72, the elevating pins 86 are lowered into the stage 74, and the substrate G _j is placed on the stage 74.

Also in the second type (FIG. 6B), by raising and lowering the raising and lowering pins 88 provided in or near the rotation drive unit 80 in cooperation with the transfer arms MU and ML in the same manner as the raising and lowering pins 86. The substrate G _i processed on the spin chuck 82 and the substrate G _j to be processed next can be exchanged in the same manner as described above.

FIG. 7 shows a third type of single wafer processing unit included in the substrate processing apparatus. This third type is used in the single-wafer type heat treatment unit 50 so that a plate 90 on which a single substrate G is placed and conveyed can be slid into and out of the main body heat treatment chamber 92 like a drawer. Yes. While performing the heat treatment, the plate 90 stands by outside the main body heat treatment chamber 92 (c). And after heat processing is complete | finished, the plate 90 enters the main body heat processing chamber 92, receives the board | substrate G, takes out the received board | substrate G outside, exposes it in air | atmosphere for a fixed time, and cools (b). Thereafter, the raising and lowering pins 94 provided on the plate 90 are moved up and down in cooperation with the transfer arms MU and ML, so that the substrate G _i processed on the plate 90 and the next substrate G _j are made in the same manner as described above. It replaces (a).

  FIG. 8 shows a configuration example of a batch-type baking unit 52A (52B) included in the substrate processing apparatus of this embodiment. The batch-type firing unit 52A (52B) is configured as a vertical heat treatment apparatus, and includes a cylindrical vertical heating furnace 96, a vertical substrate boat 98 that can be stored in the heating furnace 96, and the substrate boat 98. A boat support arm 102 that supports the base boat 98 from below through a heat retaining cylinder 100 and a lift mechanism 104 that moves the boat support arm 102 up and down in order to move the substrate boat 98 into and out of the heating furnace 96. A plurality of substrate support rods 106 extending in parallel of the substrate boat 98 are formed with a number of holding grooves (slots) for detachably holding a batch processing number (for example, 100) of substrates G at regular intervals. .

In the batch-type baking unit 52A (52B), when one batch-type baking process is completed, the substrate boat 98 is pulled out (down) of the heating furnace 96 as illustrated. There, the transfer arm MU of the third wafer carrying mechanism 34, ML is sequentially accessed to each slot of the substrate boat 98, replacing the substrate G _j before treatment with processed substrate G _i one by one It is like that.

[Basic operation of single wafer transfer mechanism]

Per FIGS. 9A and 9B, the pre-processing each leaf transporting mechanism 30, 32, 34 and 36 are each single wafer processing unit or substrate G _i of each batch type processing unit to access to processed in each relevant area The operation of replacing the substrate G _j will be described.

First, as shown in (a) of FIG. 9A, the single wafer transfer mechanism moves the transfer main bodies 60U and 60L up and down and moves both transfer arms MU and ML back to the original position or the backward movement position. The two transfer arms MU and ML are attached in front of a processing unit (not shown) as an access destination by rotating. In this case, transport arms MU, one example lower transport arm of ML ML holds the substrate G _j before treatment in the processing unit of the access destination. The other, that is, the upper transfer arm MU is empty without the substrate G. The upper transfer arm MU in the empty state is aligned with the height position for substrate transfer.

Next, as shown in FIG. 9A (b), the single wafer transfer mechanism moves the empty upper transfer arm MU forward or to the forward movement position, and has processed the access destination processing unit. receive the substrate G _i at the upper transfer arm MU. Then, as shown in (c) of FIG. 9A, the upper transport arm MU is retracted or shortened moved to the original position, carries out the processed substrates G _i from the processing unit.

Thus immediately after unloading the processed substrate G _i, the leaf transporting mechanism, as shown in (d) of FIG. 9B, the lifting movement (in the illustrated upward movement) performed, pretreatment substrate G The lower transfer arm ML holding _j is aligned with the height position for substrate transfer. Next, as shown in FIG. 9B (e), the lower transfer arm ML is moved forward or extended to the forward movement position, and the unprocessed substrate _Gj is carried into the processing unit and transferred. Then, as shown in FIG. 9B (f), the empty lower transfer arm ML is moved backward or shortened to the original position.

  Each single wafer transfer mechanism 30, 32, 34, 36 in this embodiment uses two transfer arms MU, ML from the upstream shuttle JSU / JSL or substrate relay stand 20 (20U / 20L) adjacent thereto. The operation of lowering one substrate G and the operation of stacking one substrate G on the downstream shuttle KSU / KSL or substrate relay stand 26 (26U / 26L) adjacent thereto can be performed simultaneously or in parallel. .

In FIG. 10A, in each single wafer transport mechanism 30, 32, 34, 36, one substrate G _j is unloaded from the upper shuttle JSU on the upstream side, and at the same time, one substrate G _{i is} placed on the lower shuttle KSL on the downstream side. The operation to load is shown. In this case, as shown in FIG. 10A, the single-wafer transport mechanism moves the transport main bodies 60U and 60L up and down with both transport arms MU and ML pulled back to the original position or the backward movement position. Then, the upper transfer arm MU is attached to the upper shuttle JSU on the upstream side, and the lower transfer arm ML is attached to the lower shuttle KSL on the downstream side. In this case, the upper transport arm MU is empty, the lower transport arm ML holds the substrate G _i. The upper shuttle JSU upstream has gained substrate G _j, the lower shuttle KSL downstream side is empty.

Next, as shown in FIG. 10A (b), the single wafer transfer mechanism moves the upper transfer arm MU forward or expands, and unloads (receives) the substrate G _j from the upper shuttle JSU on the upstream side. the lower transfer arm ML is advanced or extended movement, gain substrate G _i to the lower shuttle KSL downstream (passed). Thereafter, as shown in FIG. 10A (c), the upper transfer arm MU and the lower transfer arm ML are pulled back to the original positions.

In FIG. 10B, in each single wafer transport mechanism 30, 32, 34, 36, one substrate G _j is unloaded from the upstream lower shuttle JSL, and at the same time, one substrate G _{i is transferred} to the upper shuttle KSU on the downstream side. Indicates the loading operation. In this case, as shown in FIG. 10B (a), the single wafer transfer mechanism moves the respective transfer main bodies 60U and 60L up and down with both transfer arms MU and ML pulled back to the original position or the backward movement position. And the lower transfer arm ML is attached to the lower shuttle JSL on the upstream side, and the upper transfer arm MU is attached to the upper shuttle KSU on the downstream side. At this time, the lower transfer arm ML is empty, the upper transfer arm MU holds the substrate G _i. The lower shuttle JSL upstream has gained substrate G _j, the top shuttle KSU downstream is empty.

Next, as shown in FIG. 10B (b), the single-wafer transport mechanism moves the lower transport arm ML forward or extends, and wholesales (receives) the substrate G _j from the lower shuttle JSL on the upstream side. the upper transfer arm MU is advanced or extended movement, gain substrate G _i on the downstream side of the upper shuttle KSU (pass). Thereafter, as shown in FIG. 10B (c), the upper transfer arm MU and the lower transfer arm ML are pulled back to the original positions.

  Further, each of the single wafer transfer mechanisms 30, 32, 34, and 36 in this embodiment has, as another transfer mode, an upstream shuttle using only one of the two transfer arms MU and ML, for example, the upper transfer arm MU. The operation of lowering one substrate G from the JSU / JSL or substrate mounting table 20 (20U / 20L) and the downstream shuttle KSU / KSL or substrate mounting table 26 (26U / 26L) exclusively using the other, that is, the lower transfer arm ML. ) And the operation of stacking one substrate G in parallel or sequentially.

For example, wholesale one substrate G _j from the upstream side of the upper shuttle JSU with upper transport arm MU, and when to gain one substrate G _i to the lower shuttle KSL downstream with lower transport arm ML is A parallel or simultaneous operation similar to FIG. 10A can be performed. However, when the upper transfer arm MU is used to unload a single substrate G _j from the upstream lower shuttle JSL and the lower transfer arm ML is used to stack the single substrate G _i on the downstream upper shuttle KSU. As shown in FIGS. 11A and 11B, the operation becomes sequential.

First, the single wafer transfer mechanism, as shown in (a) of FIG. 11A, the transport body 60U, and vertically movable and rotates moving 60L, lower transport holding the substrate G _i on the downstream side of the upper shuttle KSU Attach arm ML. Next, as shown in FIG. 11A (b), the lower transfer arm ML is moved forward or extended, and the substrate G _j is loaded (passed) on the upper shuttle KSU on the downstream side. Thereafter, as shown in FIG. 11A (c), the emptied lower transfer arm ML is pulled back to the original position.

Next, as shown in FIG. 11B (d), the single-wafer transport mechanism moves the transport main bodies 60U and 60L up and down and rotationally moves the empty upper transport arm MU to the lower shuttle JSL on the upstream side. wear. Next, as shown in FIG. 11B (e), the upper transfer arm MU is moved forward or extended to unload (receive) the substrate G _j from the lower shuttle JSL on the upstream side. Thereafter, as shown in FIG. 11B (f), the upper transfer arm MU holding the substrate G _j is pulled back to the original position.

[All procedures]

Here, the processing procedure of all the steps for one substrate G _n in the substrate processing apparatus will be described.

First, in the loader 12, the loader transport mechanism 18 extracts one substrate _Gn from one of the cassettes C on the stage 16, and the extracted substrate _{Gn is transferred} to the substrate relay table 20, that is, the upper mounting table 20U or the lower substrate. It mounts on either one of the mounting base 20L.

Thereafter, when the first single wafer transfer mechanism 30 is mounted on the upper mounting table 20U, the upper transfer arm MU is used. When the first single-sheet transfer mechanism 30 is mounted on the lower mounting table 20L, the lower transfer arm ML is used. The substrate G _n is picked up and loaded into the single wafer cleaning unit 44. At this time, before the substrate _Gn is carried into the single wafer cleaning unit 44, another substrate that has just been cleaned by the unit 44 is carried out.

In this single wafer cleaning unit 44, a single wafer processing is performed by a cleaning head 76 (84) on a surface to be processed (transparent conductive layer of a blanket) of a substrate G _n placed or held on a stage 74 or a spin chuck 82. The cleaning process is performed. By this cleaning process, foreign substances and contaminants are removed from the surface to be processed of the substrate _Gn .

When the single wafer cleaning process as described above is completed, the first single wafer transport mechanism 30 unloads the substrate _Gn from the single wafer cleaning unit 44 and faces the transport line 28 in the first area. It carries in to the single-wafer | sheet-fed patterning unit 46 arrange | positioned. Also at this time, before the substrate G _n is carried into the single-wafer patterning unit 46, another substrate that has just undergone patterning processing in this unit 46 is carried out.

In this single-wafer patterning unit 46, for example, by a laser etching method, a single-wafer method is applied to a surface to be processed (a blanket transparent conductive layer) of a substrate _Gn placed on a stage 74 by a laser emission head 76. A patterning process is performed. By this patterning process, a patterned transparent electrode 200 is formed on the surface to be processed of the substrate _Gn .

The transparent conductive layer or the transparent electrode 200 is made of, for example, fluorine-doped SnO ₂ (FTO) or indium-tin oxide (ITO). The transparent substrate 208 that is a base material of the substrate G is made of a transparent inorganic material such as quartz or glass, or a transparent plastic material such as polyester, acrylic, or polyimide.

When the single-wafer patterning process as described above is completed, the first single-wafer transport mechanism 30 unloads the substrate _Gn from the single-wafer patterning unit 46, and the upper part of the first shuttle transport unit 38. Stack on Shuttle SU or Lower Shuttle SL. The upper shuttle SU or the lower shuttle SL of the first shuttle transport unit 38 loaded with the substrates _Gn moves from the loading position (FU or FL) to the unloading position (WU or WL).

When the substrate _Gn arrives at the unloading position (WU or WL) of the first shuttle transport unit 38, the second single wafer transport mechanism 32 unloads the substrate _Gn and performs the single wafer operation in the second area. Carry into the electrode deposition unit 48. Also in this case, before the substrate G _n is carried into the single-wafer working electrode film forming unit 48, another unit which has just been subjected to the film forming process of the working electrode (semiconductor fine particle layer) 204 by this unit 48. The substrate is unloaded.

In the single-wafer working electrode film forming unit 48, for example, by a screen printing method, a single-wafer-type film formation is performed by the print head 76 on the processing surface (patterned transparent electrode 200) of the substrate G _n on the stage 74. Processing is performed. By this film forming process, a patterned semiconductor fine particle layer 204 is formed on the surface to be processed of the substrate G _n . The semiconductor fine particle layer 204 is made of a metal oxide such as TiO ₂ , ZnO, SnO ₂ , for example.

When the single-wafer working electrode film forming process is completed, the second single-wafer transport mechanism 32 unloads the substrate _Gn from the single-wafer working electrode film forming unit 48 to the second area. And is carried into a single wafer heat treatment unit 50 disposed on the opposite side of the transfer line 28. Also at this time, before the substrate _Gn is carried into the single wafer heat treatment unit 50, another substrate that has just undergone heat treatment in this unit 50 is carried out.

In the single wafer heat treatment unit 50, the substrate _Gn is heated at a predetermined temperature in the main body heat treatment chamber 92 for a predetermined time, and the semiconductor fine particle layer 204 on the substrate processing surface is baked. Then, after the baking is finished, the substrate 90 is carried out of the main body heat treatment chamber 92 by the plate 90, and the substrate G _n is cooled to room temperature on the plate 90. By this heat treatment, the adhesion of the semiconductor fine particle layer 204 is improved.

When the single-wafer-type heat treatment as described above is completed, the second single-wafer transport mechanism 32 unloads the substrate _Gn from the single-wafer heat-treatment unit 50, and the upper shuttle of the second shuttle transport unit 40. Load on SU or lower shuttle SL. The upper shuttle SU or the lower shuttle SL of the second shuttle transport unit 40 loaded with the substrates _Gn transports from the loading position (FU or FL) to the unloading position (WU or WL).

The third single wafer transport unit 34 unloads the substrate _Gn that has arrived at the unloading position (WU or WL) of the second shuttle transport unit 40, and is one of the batch-type firing units 52A and 52B in the third area. Carry in one side. At this time, prior to loading the substrate G _n into the corresponding slot of the batch-type firing unit 52A (or 52B), another substrate that has been fired in the unit 52A (or 52B) from that slot. Is taken out and carried out of the unit.

In the batch-type baking unit 52A (52B), after all the substrates G _{1 to} G ₁₀₀ (including the substrate G _n ) before the batch processing (100 pieces) are prepared in the substrate boat 98, the lift mechanism The boat support arm 102 is raised by 104, and the substrate boat 98 is inserted or loaded into the heating furnace 96. Then, the substrates G _{1 to} G ₁₀₀ on the substrate boat 98 are heated at a predetermined temperature for a predetermined time in the heating furnace 96, and as a result, the semiconductor fine particle layer 204 is baked on the surface to be processed of each of the substrates G _{1 to} G _100. A knot is obtained.

When the batch-type baking process as described above is completed, the elevating mechanism 104 lowers the boat support arm 102, and the substrate boat 98 is taken out of the heating furnace 96, and is cooled by being exposed to the atmospheric space for a certain period of time. The third single-wafer transport mechanism 34 accesses the batch-type baking unit 52A (52B) that has completed one batch-type baking process (baking + cooling) at a cycle of the tact time T _S , and then on the substrate boat 98. The substrates G _{1 to} G ₁₀₀ that have been processed in each of the slots are replaced one by one with the substrates G _{101 to} G ₂₀₀ that have not yet been subjected to the next batch heat treatment.

In this way, the substrate G _{n that} has been subjected to the baking process is unloaded from the batch-type baking unit 52A (52B) by the third single wafer transfer mechanism 34 and stacked on the upper shuttle SU or the lower shuttle SL of the fourth shuttle transfer unit 42. . The upper shuttle SU or the lower shuttle SL of the fourth shuttle transport unit 42 loaded with the substrates _Gn transports from the loading position (FU or FL) to the unloading position (WU or WL).

The fourth single-wafer transport unit 36 wholesales the substrate _Gn that has arrived at the unloading position (WU or WL) of the third shuttle transport unit 42, and any one of the single-wafer type dye adsorption units in the fourth area. Carry to 54. At this time, before the substrate G _n is carried into the single-wafer type dye adsorption unit 54, another substrate that has just undergone the dye adsorption process is taken out from the unit 54 and carried out of the unit 54. The

In the substrate G _n the carry was single-wafer dye adsorption unit 54, the dye solution is blown by the nozzle head 84 with respect to the processed surface of the substrate G _n for rotational movement on the spin chuck 82 (porous semiconductor fine particle layer 204) The single-wafer dye adsorption process is performed. By this dye adsorption treatment, the sensitizing dye is adsorbed to the porous semiconductor fine particle layer 204 on the surface to be treated of the substrate _Gn . The dye solution used in the dye adsorption unit 54 is obtained by dissolving a sensitizing dye in a solvent at a predetermined concentration. As the sensitizing dye, for example, a metal complex such as metal phthalocyanine, or an organic dye such as a cyanine dye or a basic dye is used. As the solvent, for example, alcohols, ethers, amides, hydrocarbons and the like are used.

When the single-wafer type dye adsorption processing as described above is completed, the fourth single-wafer transport mechanism 36 unloads the substrate _Gn from the single-wafer type dye adsorption unit 54 and puts it on the substrate relay stand 26, that is, It is mounted on either the upper mounting table 26U or the lower mounting table 26L. Immediately thereafter, the unloader transport mechanism 24 picks up the substrate G _n from the substrate relay stand 26 and stores the processed substrate G _n in any one cassette C on the stage 22.

[Transfer form 1 of single wafer transfer mechanism]

  Referring to FIG. 12, a series of operations until the second single wafer transfer mechanism 32 transfers the substrate G from the upstream shuttle JSU / JSL to the downstream shuttle KSU / KSL in the first transfer mode. Will be explained.

The first transfer mode is applied when two types of processing units, that is, a single-wafer working electrode film forming unit 48 and a single-wafer heat treatment unit 50 are provided in the second area. . In this case, each of the single-wafer working electrode film forming unit 48 and the single-wafer heat treatment unit 50 performs the single-wafer film forming process on each substrate G _{n in} the cycle of the tact time T _S. Each sheet is heat-treated. In FIG. 12, the single-wafer working electrode film forming unit 48 is abbreviated as a single-wafer processing unit A, and the single-wafer heat treatment unit 50 is abbreviated as a single-wafer processing unit B for convenience of explanation and understanding. In the figure, for example, the period of time and the time t ₄ ~t ₈ time t ₀ ~t ₄ corresponds to the tact time T _S.

In FIG. 12, at time t ₀ , the first substrate G ₁ that has completed all the single wafer processing in the area is loaded onto the lower shuttle KSL on the downstream side on the lower transfer arm ML of the single wafer transfer mechanism 32. Waiting for out. The second substrate G ₂ stays in the single wafer processing unit B responsible for the subsequent process in the area. The third substrate G ₃ stays in the single wafer processing unit A responsible for the previous (previous) step in the area. At this time, the upper shuttle JSU on the upstream side (first shuttle transport unit 38) arrives at the upper unloading position WU with the _fourth substrate G4 loaded thereon.

Immediately after this, the single wafer transport mechanism 32 uses the upper transport arm MU to unload the fourth substrate G ₄ from the upstream upper shuttle JSU and simultaneously uses the lower transport arm ML by the operation shown in FIG. 10A. The first substrate G ₁ is stacked on the lower shuttle KSL on the downstream side (t = t _{1 to} t ₂ ).

Next, the single wafer transfer mechanism 32 accesses the single wafer processing unit A, and the previous process (film formation process) has already been completed for the fourth substrate G ₄ that has just been wholesaled from the upper shuttle JSU on the upstream side. third replace the substrate _{G 3 (t = t 2 ~t} 3). In this case, the processed third substrate G ₃ is unloaded from the single-wafer processing unit A using the lower lower transfer arm ML, and the pre-processing 4 using the upper transfer arm MU instead. The second substrate G ₄ is carried into the single wafer processing unit A.

Next, the single wafer transport mechanism 32 accesses the single wafer processing unit B, and the post-process (heat treatment) of the _third substrate G ₃ just unloaded from the single wafer processing unit A has been completed at this point. The second substrate G ₂ is replaced (t = t _{3 to} t ₄ ). In this case, the processed second substrate G ₂ is unloaded from the single wafer processing unit B using the empty upper transfer arm MU first, and replaced by the lower transfer arm ML before processing. The third substrate G ₃ is carried into the single wafer processing unit B. On the other hand, loaded with the substrate G ₅ lower shuttle JSL is fifth upstream (first shuttle transport section 38) arrives at the lower unloading position WL (t = t _4).

Immediately after this, the single wafer transfer mechanism 32 uses the upper transfer arm MU simultaneously with the _fifth substrate G ₅ from the lower shuttle JSL on the upstream side using the lower transfer arm ML by the operation shown in FIG. 10B. Then, the second substrate G ₂ is stacked on the downstream upper shuttle KSU (t = t _{5 to} t ₆ ).

Next, the single wafer transfer mechanism 32 accesses the single wafer processing unit A, and the previous process (film formation process) has already been completed for the _fifth substrate G ₅ just wholesaled from the lower shuttle JSL on the upstream side. The fourth substrate G ₄ is replaced (t = t _{6 to} t ₇ ). In this case, the processed fourth substrate G ₄ is unloaded from the single wafer processing unit A using the empty upper transfer arm MU, and is replaced with the lower substrate 5 ML before processing. The second substrate G ₅ is carried into the single wafer processing unit A.

Next, the single wafer transfer mechanism 32 accesses the single wafer processing unit B, and the post-process (heat treatment) of the _fourth substrate G ₄ that has just been unloaded from the single wafer processing unit A has been completed 3. The third substrate G ₃ is replaced (t = t _{7 to} t ₈ ). In this case, the processed third substrate G ₃ is unloaded from the single-wafer processing unit B using the empty lower transfer arm ML first, and the upper transfer arm MU is used instead before the processing. The fourth substrate G ₄ is carried into the single wafer processing unit B. Unloaded third substrate G ₃ were waits for product unloading to the lower shuttle KSL downstream on the lower transport arm ML. On the other hand, loaded with the upstream side (the first shuttle transport section 38) substrate G ₆ upper shuttle JSU is the sixth arrives to the upper unloading position WU (t = t _8). Thereafter, a series of substrate transfer operations as described above are repeated with the tact time T _S as a reference period.

[Transfer form 2 of single wafer transfer mechanism]

In FIG. 13, a plurality of single-wafer processing units A and B, for example, two (A ₁ , A ₂ ) and three (B ₁ ), respectively, are included in the second area handled by the second single-wafer transport mechanism 32. , B ₂ , B ₃ ) are provided, the second substrate transfer mode applied. Here, in the single wafer processing units A ₁ and A ₂ , the single wafer processing in the previous process which requires a substrate stay time of 2T _S (this includes the net processing time) due to the time difference of the tact time T _S. A (single-wafer working electrode film forming process) is repeatedly performed. On the other hand, the single wafer processing units B ₁ , B ₂ , and B ₃ repeatedly perform the subsequent single wafer processing B (single wafer heat treatment) that requires a time of stay of the substrate of 3T _{S due to} the time difference of the tact time T _S. It is like that.

In this case, at the time point t ₀ , the first substrate G ₁ that has completed all the single-wafer processing in the area is held by the lower transfer arm ML of the single-wafer transfer mechanism 32 to the lower shuttle KSL on the downstream side. Waiting for shipment. The second, third, and fourth substrates G ₂ , G ₃ , and G ₄ stay in the single wafer processing units B ₁ , B ₂ , and B ₃ that are responsible for subsequent processes in the area. The fifth and sixth substrates G ₅ and G ₆ stay in the single wafer processing units A ₁ and A ₂ that are responsible for the previous process in the area. At this time, the upper shuttle JSU on the upstream side (first shuttle transport unit 38) arrives at the upper unloading position WU with the _seventh substrate G7 loaded thereon.

Immediately after this, sheet conveyor mechanism 32, the operation shown in FIG. 10A, at the same time unload the substrate G ₇ on the upstream side from the upper shuttle JSU 7 th with upper transport arm MU, using the lower transport arm ML The first substrate G ₁ is stacked on the lower shuttle KSL on the downstream side (t = t _{1 to} t ₂ ).

Next, the single wafer transfer mechanism 32 accesses the single wafer processing unit A ₁ , and at this point, the previous process (film formation process) is about to take place on the seventh substrate G ₇ just wholesaled from the upstream shuttle JSU on the upstream side. It replaces with the completed fifth substrate G ₅ (t = t _{2 to} t ₃ ).

Next, the single wafer transfer mechanism 32 accesses the single wafer processing unit B _1, and the fifth step G ₅ just unloaded from the single wafer processing unit A ₁ is close to the subsequent process (heat treatment) at this time. The second substrate G ₂ that has been completed is replaced (t = t _{3 to} t ₄ ). On the other hand, loaded with the upstream side (the first shuttle transport portion 38) lower shuttle JSL is the eighth substrate G ₈ of arriving to the lower unloading position WL (t = t _4).

Immediately after this, the single wafer transfer mechanism 32 uses the lower transfer arm ML to unload the _eighth substrate G8 from the lower shuttle JSL on the upstream side and simultaneously uses the upper transfer arm MU by the operation shown in FIG. 10B. Then, the second substrate G ₂ is stacked on the downstream upper shuttle KSU (t = t _{5 to} t ₆ ).

Next, the single wafer transfer mechanism 32 accesses the single wafer processing unit A ₂ , and at this point, the previous process (film formation process) is about to take place on the eighth substrate G ₈ just wholesaled from the lower shuttle JSL on the upstream side. replace the sixth substrate G ₄ that is completed _{(t = t 6 ~t 7)} .

Next, the single wafer transport mechanism 32 accesses the single wafer processing unit B _2, and the sixth step G ₆ just unloaded from the single wafer processing unit A ₂ is close to the subsequent process (heat treatment) at this point. It replaces with the completed third substrate G ₃ (t = t _{7 to} t ₈ ). Unloaded third substrate G ₃ were waits for product unloading to the lower shuttle KSL downstream on the lower transport arm ML. On the other hand, loaded with the upstream side (the first shuttle transport section 38) the upper shuttle JSU of 9 th substrate G ₉ arrives at the upper unloading position WU (t = t _8). Thereafter, a series of substrate transfer operations as described above are repeated with the tact time T _S as a reference period.

Note that the first single-wafer transport mechanism 30 also differs from the second single-layer transport mechanism 30 described above only in that the substrate relay table 20 (20U / 20L) is arranged on the upstream side of the transport line 28 instead of the shuttle transport unit. Similar to the single wafer transfer mechanism 32, a series of substrate transfer operations in the first transfer mode or the second transfer mode is repeatedly performed with the tact time T _S as a reference period.

[Transfer form 3 of single wafer transfer mechanism]

  With reference to FIG. 14, as a third transfer mode, a series of substrate transfer operations performed by the third single wafer transfer mechanism 34 in the third area where the pair of batch-type baking units 52A and 52B are arranged will be described.

As shown in FIG. 15, these two batch-type baking units 52A and 52B have the same batch-type baking processing that requires a batch processing time of _TN or a substrate residence time (net baking time T _a + cooling time T _b ). Are repeated alternately. Here, if the number of batch processed sheets is N (for example, 100 sheets), there is a relationship of T _R = N * T _S between the tact time T _S and the batch processing time T _N.

In FIG. 14, for convenience of explanation and understanding, one batch type firing unit 52A is abbreviated as batch processing unit C, and the other batch type firing unit 52B is abbreviated as batch processing unit D. In the figure, for example, the period of time and the time t ₄ ~t ₈ time t ₀ ~t ₄ corresponds to the tact time T _S.

In FIG. 14, the time point t ₀ is immediately after one batch processing unit C finishes the batch processing (batch-type firing processing). At this time, the first substrate G ₁ is unloaded from the unit C (the first slot of the substrate boat 98) by the lower arm ML of the single wafer transfer mechanism 34, and the lower portion of the downstream side (the third shuttle transfer unit 42). Waiting for shipment to shuttle KSL. In place of the first substrate G ₁ , the 201st substrate G ₂₀₁ is carried into the unit C (the first slot of the substrate boat 98). The second to _100th substrates G _{2 to} G ₁₀₀ still remain in the batch processing unit C (second to 100th slots of the substrate boat 98). On the other hand, 101 th to 200 th substrate G ₁₀₁ ~G ₂₀₀ is staying in (first to 100 slots substrate boats 98) in the other batch processing unit D, batch processing (batch type firing process) It is in a situation just after starting. At this time, the upper shuttle JSU on the upstream side (second shuttle transport unit 40) arrives at the upper unloading position WU with the _202nd substrate G202 loaded thereon.

Immediately after this, the single wafer transfer mechanism 34 loads the _first substrate G ₁ on the lower shuttle KSL on the downstream side using the lower transfer arm ML and operates the upper transfer arm MU simultaneously with the operation similar to FIG. 10A. Using the upper shuttle JSU on the upstream side, the 202nd substrate G ₂₀₂ is unloaded (t = t _{1 to} t ₂ ).

Next, the single wafer transfer mechanism 34 accesses the batch processing unit C (second slot of the substrate boat 98), and has finished batch processing of the _202nd substrate G ₂₀₂ just wholesaled from the upper shuttle JSU on the upstream side. second replace the substrate _{G 2 (t = t 2 ~t} 3).

Immediately after that, the lower shuttle JSL on the upstream side arrives at the lower unloading position WU with the _203rd substrate G ₂₀₃ loaded (t = t ₄ ).

Immediately after this, the single wafer transfer mechanism 32 _first loads the second substrate G ₁ on the upstream shuttle KSU on the downstream side using the lower transfer arm ML by the operation shown in FIGS. 11A and 11B, and then transfers the upper substrate. Using the arm MU, the 203rd substrate G ₂₀₃ is unloaded from the lower shuttle JSL on the upstream side (t = t _{5 to} t ₆ ).

Next, the single wafer transfer mechanism 34 accesses the batch processing unit C (the third slot of the substrate boat 98), and has completed the batch processing of the _203rd substrate G ₂₀₃ that has just been wholesaled from the lower shuttle JSL on the upstream side. third replace the substrate _{G 3 (t = t 6 ~t} 7).

Immediately thereafter, the upper shuttle JSU on the upstream side arrives at the lower unloading position WU with the _204th substrate G204 loaded (t = t ₈ ). Thereafter, the same operation as described above is repeatedly performed at the cycle of the tact time T _S.

Although not illustrated, sheet transport mechanism 34, the final batch processing unit C accesses the (first 100 slots substrate boats 98), 300 th substrate G ₃₀₀ freshly grated from the upstream side of the upper shuttle JSU Is replaced with the _100th substrate G100 which has been subjected to the batch processing. As shown in FIG. 15, the other batch processing unit D ends the batch processing for one time just at this time.

Thereafter, sheet transport mechanism 34, for the subsequent 301-th to 400-th substrate G ₃₀₁ ~G ₄₀₀ from the upstream side of the shuttle JSU / JSL sequentially unloaded in cycles of tact time T _S, as shown in FIG. 15 to sequentially carry in a cycle of tact time T _S as replacing the batch processing unit 101 th to 200 th substrate G ₁₀₁ ~G ₂₀₀ processed to D one by one by the same procedure as described above. Then, the batch processing unit 101 th to 200 th substrate G ₁₀₁ ~G ₂₀₀ which are sequentially carried out from the D is the downstream side of the transfer line 28 at a period of tact time T _S is stacked sequentially downstream of the shuttle KSU / KSL It is conveyed to.

In this embodiment, batch processing (baking processing) and substrate replacement operation are alternately repeated between the pair of batch processing units C and D (batch-type baking units 52A and 52B). Then, the substrate replacement operation, substrate storage unit one by one substrate as a reference cycle replacement of the substrate before treatment with the processed substrate is a tact time T _S in (slot on board the boat 98) (one slot) repeating Done.

[Transfer Form 4 of Sheet Feeding Mechanism]

  A series of substrate transfer operations performed by the fourth single-wafer transport mechanism 36 in the fourth area where one or a plurality of single-wafer-type dye adsorption units 54 are arranged are basically the above-described third operations. This is similar to a series of substrate transfer operations (third transfer mode) of the third sheet transport mechanism 34 in the area.

That is, when the upper shuttle JSU on the upstream side (third shuttle transport unit 42) loads the nth substrate _Gn and arrives at the upper unloading position WU, the fourth single-wafer transport mechanism 36 immediately follows that shown in FIG. By the same operation, another processed substrate held by one transfer arm, for example, the lower transfer arm ML, is placed on the lower mounting table 26L of the downstream substrate relay table 26, and the other upper transfer arm MU. And simultaneously unloading the substrate G _n from the upper shuttle JSU.

Next, the single wafer transfer mechanism 36 accesses the single wafer type dye adsorption unit 54 where the dye adsorption has been completed most recently at this time, and has already processed the substrate G _n that has just been wholesaled from the upper shuttle JSU on the upstream side. Is replaced with the substrate _GP . At this time, the processed substrate _GP is unloaded from the single-wafer dye adsorption unit 54 using the lower lower transfer arm ML, and the substrate before processing is replaced using the upper transfer arm MU instead. G _n is carried into the single-wafer type dye adsorption unit 54.

Shortly thereafter, the lower shuttle JSL on the upstream side arrives at the lower unloading position WL with the (n + 1) th substrate G _{n + 1} loaded. Immediately thereafter, the fourth single wafer transfer mechanism 36 mounts the processed substrate _GP previously held by the lower transfer arm ML on the upper side of the substrate relay table 26 by the operation shown in FIGS. 11A and 11B. Then, the substrate G _{n + 1} is unloaded from the lower shuttle JSL using the upper transfer arm MU. At this time, the single-wafer dye adsorption unit 54 where the dye adsorption is completed most recently is accessed, and another substrate G _{n + 1} that has just been wholesaled from the lower shuttle JSL on the upstream side has been processed. _Replace with _Q. In this case, the substrate G _Q treated with lower transport arm ML those who are empty unloaded from the single wafer dye adsorption unit 54, the same pretreatment with upper transport arm MU to interchange substrate G _{n + 1} is carried into the single-wafer type dye adsorption unit 54. Thereafter, a series of substrate transfer operations as described above are repeatedly performed with the tact time T _S as a basic period.

[Main effects in the embodiment]

  As described above, in the substrate processing apparatus of this embodiment, a plurality of (first to fourth) single wafer transfer mechanisms 30, 32, 34, and 36 and a plurality (first to third) are provided on the transfer line 28. The shuttle transport units 38, 40, and 42 are arranged in a line alternately in the order of the process flow.

Here, the first single-wafer transport mechanism 30 has one or a plurality of single-wafer cleaning units 44 and one or a plurality of single-wafer cleaning units arranged in the periphery (first area) in a cycle of the tact time T _S. The single wafer patterning unit 46 is accessed, and the substrate G is loaded and unloaded one by one in each unit. The second single-wafer transport mechanism 32 has one or a plurality of single-working-type working electrode film forming units 48 and one or a plurality of single-layer working electrode film forming units 48 disposed around (second area) in a cycle of the cycle time T _S. The access to the thermal processing unit 50 is performed, and the substrate G is put in and out of each unit one by one. The third wafer carrying mechanism 34, a cycle of tact time T _S, batch baking unit 52A surrounding the pair disposed (third area) (two), to access 52B, each unit The substrates G are taken in and out one by one. The fourth sheet transport mechanism 36 accesses one or a plurality of the dye adsorption units 54 arranged around (fourth area) in the cycle of the tact time T _S and accesses each unit to be accessed. The substrates G are taken in and out one by one.

Between the first sheet transport mechanism 30 and the second sheet transport mechanism 32, the upper / lower shuttles SU / SL of the first shuttle transport unit 38 are alternately used and the upstream side (30) to the downstream side. In (32), the substrates G are transferred one by one in the cycle of the tact time T _S. In this case, the first single wafer transfer mechanism 30 may load the substrate G while one of the upper / lower shuttles SU / SL stays at the loading position FU / FL, and the second single wafer transfer mechanism 30. You don't have to worry about how the mechanism 32 comes out. On the other hand, the second single-wafer transport mechanism 32 only has to wholesale the substrate G while one of the upper / lower shuttles SU / SL stays at the unloading position WU / WL. You do not have to worry about the situation on the transport mechanism 30 side.

The same relationship exists between the second single wafer transfer mechanism 32 and the third single wafer transfer mechanism 34 that exchange the substrate G with the second shuttle transfer unit 40 interposed therebetween, and the third shuttle transfer unit 42. It is also established between the third sheet transport mechanism 34 and the fourth sheet transport mechanism 36 that exchange the substrate G with the substrate interposed therebetween. The upstream single wafer transfer mechanism may be loaded with the substrate G while one of the upper / lower shuttles SU / SL stays at the loading position FU / FL. / While one of the lower shuttles SU / SL stays at the unloading position WU / WL, the substrate G may be wholesaled. Accordingly, the timing at which the upstream single-wafer transport mechanism loads the substrate G _j may coincide with the timing at which the downstream single-wafer transport mechanism unloads the substrate G _i , or may be slightly different.

  Each of the single wafer transfer mechanisms 30, 32, 34, and 36 moves up and down and rotates the transfer main bodies 60U and 60L and transfers the transfer arms MU and ML in order to transfer the substrate G within each assigned area. What is necessary is just to perform advance / retreat or expansion-contraction movement, and the horizontal movement of the conveyance main bodies 60U and 60L is not required. Therefore, each of the single-wafer transport mechanisms 30, 32, 34, and 36 can perform substrate transfer at high speed and efficiently, and can reduce generation or winding of particles.

  On the other hand, the shuttle transport units 38, 40, and 42 only move the upper / lower shuttle SU / SL having the light and small loading platform 66 on which only one substrate G is loaded, horizontally by a uniaxial transport mechanism. Is very simple and does not generate particles.

  Further, each shuttle transport unit 38, 40, 42 performs a reverse cycle or reverse of the routine operation (loading stay → outward movement → unloading stay → return movement) of the upper shuttle SU and the lower shuttle SL having the same structure and the same function. Since it only has to be repeated in phase, the conveyance program (software) can be remarkably simplified and the cost can be reduced. In particular, in this embodiment, since the operations of the first to third shuttle transport units 38, 40, 42 are all synchronized, further simplification and cost reduction of the transport program (software) in the entire system. High throughput can be realized.

Further, in this substrate processing apparatus, single-wafer processing units 44, 46, 48, 50, 54 and batch processing units 52 </ b> A, 52 </ b> B are mixedly arranged along the transfer line 28. Each of the single wafer transfer mechanisms 30, 32, 34, and 36 can uniformly transfer the substrate G in the cycle of the tact time T _S regardless of whether the processing unit provided in each assigned area is a single wafer type or a batch type. Remove or replace one by one. As a result, the single-wafer transport of the substrate in each part on the transport line 28 is repeated with the tact time T _S as the reference period. This makes it possible to easily construct an in-line system in which a single wafer processing unit and a batch processing unit are mixed.

In this substrate processing apparatus, the first single wafer transfer mechanism 30 positioned at the uppermost stream of the transfer line 28 exchanges the loader transfer mechanism 18 and the substrate G one by one via the stationary substrate relay stand 20. In this case, since the load task of the loader transfer mechanism 18 is much smaller than the transfer task of the single wafer transfer mechanism 30, it is possible to easily avoid the competition between the loading and unloading of the substrate G between them. Further, even when particles are generated or rolled up when the loader transport mechanism 18 moves horizontally in the system width direction (Y direction) in the loader 12, it is an area outside the process station 10 and is unprocessed. Even if particles adhere to the substrate G, it is removed by the single-wafer cleaning unit 44 in the first step, so there is no problem. The same applies to the stationary substrate relay table 26 and the unloader transport mechanism 18 provided on the downstream end side of the transport line 28.

[Other Embodiments or Modifications]

  In the substrate processing apparatus of the above-described embodiment, the substrate relay table 20 (20U, 20L) on the loader 12 side and / or the substrate relay table 26 (26U, 26L) on the unloader 14 side are connected to the shuttle transport units 38, 40, 42. It is also possible to replace the same shuttle transport unit.

  As an advanced form of the substrate processing apparatus in the embodiment described above, for example, as shown in FIG. 16, a processing system in which all processing units used in the manufacturing process of the dye-sensitized solar cell (FIG. 17) are integrated may be constructed. Is possible.

  In this processing system, the first stacked assembly (208/200/204) on the transparent substrate 208 side is produced by the first process station 10 as in the above embodiment, and the counter substrate 210 side is produced by the second process station 110. The second laminated assembly (210/205/202) is manufactured, and the first laminated assembly (208/200/204) and the second laminated assembly (210/205/202) are bonded together in the bonding unit 112. ing.

Here, in the first process station 10, the transparent substrate 208 on which the transparent conductive layer of the blanket before the transparent electrode 202 is patterned is formed from the loader 12 as an unprocessed substrate G, as in the above embodiment. It is input in a cycle of tact time T _S. On the other hand, in the second process station 110, the counter substrate 210 on which the blanket conductive layer (for example, FTO) before the base electrode 205 is patterned is treated as an unprocessed substrate H by the loader 114 with a tact time T _S. It is input in the cycle. The loader 114 has the same configuration and function as the loader 12 and includes a loader transport mechanism 116.

  The second process station 110 has a transfer line 118 that extends straight from the loader 114 toward the bonding unit 112 in the system longitudinal direction (X direction). Various types of processing units 134 to 142B are arranged.

  On the transport line 118, a plurality (three in the illustrated example) of single wafer transport mechanisms 120, 122, and 124 and a plurality (three) of shuttle transport units 126, 128, and 130 are alternately arranged in a line. Has been.

  More specifically, the fifth single wafer transfer mechanism 120 is located on the uppermost stream on the transfer line 118 with respect to the process flow, and is sandwiched between the substrate relay stand 132 adjacent to the loader 114 and the fifth shuttle transfer unit 126. ing. One or a plurality of single-wafer cleaning units 134 for cleaning the surface to be processed of the substrate G one by one, and a first area extending on both the left and right sides of the fifth single-wafer transport mechanism 120, and 1 One or a plurality of single-wafer patterning units 136 for patterning the blanket conductive layer on the surface to be processed of the substrate H to the base electrode 205 are disposed.

  The sixth sheet transport mechanism 122 is positioned on the downstream side of the fifth sheet transport mechanism 120 on the transport line 118 and is sandwiched between the fifth shuttle transport unit 126 and the sixth shuttle transport unit 128. ing. In the sixth area spreading on both the left and right sides of the sixth single-wafer transport mechanism 122, a counter electrode 202 made of carbon, for example, is formed (for example, printed and applied) on the surface to be processed of the substrate H one by one. One or a plurality of single-wafer counter electrode deposition units 138 and one or a plurality of single-wafer heat treatment units 140 for baking the surface to be processed (counter electrode 202) of the substrate H after coating one by one. Are arranged respectively.

  The seventh sheet transport mechanism 124 is positioned on the downstream side of the sixth sheet transport mechanism 122 on the transport line 118 and is sandwiched between the sixth shuttle transport unit 128 and the seventh shuttle transport unit 130. ing. In the seventh area spreading on both the left and right sides of the seventh single wafer transport mechanism 124, a plurality of (for example, 100) counter electrodes 202 formed on the surface to be processed on the substrate H are fired together. A pair of batch-type firing units 142A and 142B are arranged.

  The fifth to seventh single wafer transfer mechanisms 120, 122, and 124 have the same configuration as the first to third single wafer transfer mechanisms 30, 32, and 34 in the first process station 10. Has an effect. The fifth to seventh shuttle transport units 126, 128, and 130 have the same configuration as the first to third shuttle transport units 38, 40, and 42 in the first process station 10 and have the same functions. Play.

In the second process station 110, the substrate H sequentially receives a series of single wafer processing or batch processing in predetermined processing units in the fifth to seventh areas while descending the transport line 118. The processed substrate H became second laminated assembly (210/205/202) is a cycle of tact time T _S, the upper and lower unloading position of the seventh shuttle transport section 130 (WU / WL) It is taken up by the transport mechanism 144 of the bonding unit 112.

On the other hand, in the first process station 10, the substrate G sequentially receives a series of single wafer processing or batch processing in a predetermined processing unit in the first to fourth areas while descending the transport line 28 as in the above embodiment. . Then, the processed substrate G that has become the first laminated assembly (208/200/204) is in a cycle of tact time T _S , and the fourth shuttle transport unit 43 connected to the fourth single wafer transport mechanism 36. Are taken by the transport mechanism 144 of the bonding unit 112 from the upper and lower unloading positions (WU / WL).

  The laminating unit 112 includes a first stacked assembly (208/200/204) captured from the first process station 10 and a second stacked assembly (210/205/202) captured from the second process station 110, for example. Laminate with an adhesive to form an integral laminate assembly (208/200/204/202/205/210).

  This integrated laminate assembly (208/200/204/202/205/210) is sent to the electrolyte injection unit 146 in the next stage, and in the integrated laminate assembly in this unit 146 in more detail. An electrolyte is injected between the porous semiconductor fine particle layer 204 and the counter electrode 202.

Finally, in the next-stage sealing unit 148, the integrated laminated assembly is sealed (seal) so that the electrolyte does not leak, and the dye-sensitized solar cell module G / H of FIG. Is obtained. The dye-sensitized solar cell module G / H is payout cassette C _S units unloader 14.

  In addition, between the bonding unit 112, the electrolyte solution injection unit 146, and the sealing unit 148, the single wafer transfer mechanism and the shuttle transfer unit in the present invention are not used, and a conventionally known or well-known transfer mechanism (not shown) is used. Substrates or laminated assemblies or integrated laminated assembly substrates G / H are conveyed one by one.

  As another variation, depending on the system specifications, in either shuttle transport section, the reciprocating operation of the upper shuttle (loading / forward movement / unloading / returning movement) and the reciprocating operation of the lower shuttle (loading / The forward movement, unloading, and backward movement) can be performed independently or asynchronously.

  As described above, in the present invention, even if any single-wafer processing unit or batch-type processing unit is arranged around each single-wafer transport mechanism (in charge area), the transport cycle is uniformly performed on the transport line. Regular sheet transport or transfer is performed. Therefore, not only a system in which single-wafer processing units and batch-type processing units are mixed as in the above embodiment, but an in-line system in which all the processing units in the system are single-wafer processing units, Alternatively, the present invention can be applied to an in-line system in which all processing units in the system are batch processing units. Furthermore, the present invention is not limited to an in-line system, and the present invention can be applied to a part or the whole of an arbitrary system in which a large number of processing units are arranged substantially horizontally in the order of the process flow.

  Therefore, the present invention is not limited to the substrate processing apparatus for the manufacturing process of the dye-sensitized solar cell as in the above embodiment, and can be applied to, for example, a substrate processing apparatus for manufacturing a semiconductor device or FPD.

10 process station 12 loader 14 unloader 18 loader transport mechanism 24 unloader transport mechanism 28 transport line 30, 32, 34, 36 single wafer transport mechanism 38, 40, 42 shuttle transport unit 44 single wafer cleaning unit 46 single wafer patterning Unit 48 Single wafer type working electrode film forming unit 50 Heat treatment unit 52A, 52B Batch type baking unit 54 Single wafer type dye adsorption unit 60U, 60L Transport body MU Upper transport arm ML Lower transport arm SU Upper shuttle SL Lower shuttle 62 Upper transport path 64 Lower conveyance path FU Upper unloading position FL Lower unloading position WU Upper unloading position WL Lower unloading position

Claims (30)

First and second conveyance paths extending in parallel with each other in an arbitrary length;
Between a first loading position provided at one end of the first conveying path and a first unloading position provided at the other end of the first conveying path, which has a loading platform for loading one substrate. A first shuttle capable of reciprocating on the first transport path,
Between a second loading position provided at one end of the second conveyance path and a second unloading position provided at the other end of the second conveyance path, which has a loading platform for loading one substrate. A second shuttle capable of reciprocating on the second transport path,
Third and fourth transport paths having one end near the first and second unloading positions and extending in parallel to each other in any length from there at an end;
Between a third loading position provided at one end of the third transport path and a third unloading position provided at the other end of the third transport path, having a loading platform on which one substrate is loaded. A third shuttle capable of reciprocating on the third conveying path;
Between a fourth loading position provided at one end of the fourth transport path and a fourth unloading position provided at the other end of the fourth transport path, having a loading platform on which one substrate is loaded. A fourth shuttle capable of reciprocating on the fourth transport path,
A first transport mechanism provided with access to the first and second loading positions and having one or more first transport arms for transporting a substrate in a first area;
The first and second unloading positions and the third and fourth unloading positions are accessible so that they can rotate independently in the azimuth direction for transporting the substrate in the second area. A second transport mechanism having at least two second transport arms;
A third transport mechanism provided with access to the third and fourth unloading positions and having one or more third transport arms for transporting a substrate in a third area;
In order to perform the desired single wafer processing or batch processing on a substrate, the first substrate processing apparatus which have the a processing unit disposed on at least one of the second and third areas. In the third area, there is provided an unloader unit for performing the dispensing of a cassette containing a processed substrate.
The third transport mechanism uses the third transport arm to store the substrate unloaded from the third or fourth shuttle in the cassette.
The substrate processing apparatus according to claim 1. The first and second transport paths overlap each other at a certain interval,
The third and fourth transport paths overlap each other at a certain interval;
The substrate processing apparatus according to claim 1 or 2 . In the first area, a loader unit is provided for loading a cassette containing unprocessed substrates.
The first transport mechanism uses the first transport arm to take out a substrate to be loaded on the first or second shuttle from the cassette.
The substrate processing apparatus according to any one of claims 1 to 3. The second transport mechanism uses one of the second transport arms to unload one substrate from the first or second shuttle at the first or second unloading position; and using the other second transfer arm, carried out simultaneously or in parallel operation and a to gain one substrate to the third or fourth product leaving the third or fourth shuttle position,請Motomeko 1 The substrate processing apparatus as described in any one of -4. The substrate processing apparatus according to claim 1, wherein the second transport mechanism operates at a fixed position and does not move horizontally. A transfer line for transferring the substrate to be processed in a horizontal direction from the upstream side to the downstream side of the process flow;
A first transport mechanism provided on the transport line and having one or a plurality of first transport arms that transfer a substrate one by one to a first processing unit disposed around the first processing unit;
Provided downstream from the first transport mechanism on the transport line, each substrate is transferred to and from the second processing unit disposed around the first processing mechanism, and can be rotated independently in the azimuth direction. A second transfer mechanism having at least two transfer arms ;
A section of the transfer line is configured, and the substrates are respectively transferred from the first and second loading positions adjacent to the first transfer mechanism to the first and second unloading positions adjacent to the second transfer mechanism. First and second shuttles that can be reciprocated and stacked one by one and conveyed individually ,
A section is formed in one section of the transport line, and the substrate is moved from the third and fourth loading positions adjacent to the second transport mechanism to the third and fourth unloading positions adjacent to the third transport mechanism, respectively. Third and fourth shuttles that can be reciprocated and stacked one by one and conveyed individually
A substrate processing apparatus. The substrate processing apparatus according to claim 7, wherein the transfer of the substrate by the first shuttle and the transfer of the substrate by the second shuttle are alternately performed at a constant tact time . An operation in which the first shuttle loads a substrate and moves from the first loading position to the first unloading position; and the second shuttle loads the substrate from the second unloading position without loading a substrate. The movement to the loading position of 2 is performed at the same time,
An operation in which the second shuttle loads a substrate and moves from the second loading position to the second unloading position; and the first shuttle loads the substrate from the first unloading position without loading a substrate. The movement to the loading position of 1 is performed at the same time.
The substrate processing apparatus according to claim 8 . 10. The substrate processing apparatus according to claim 8 , wherein the first processing unit includes a plurality of first single-wafer processing units each repeatedly performing the first single-wafer processing at a constant time difference. The first transport mechanism receives, from the upstream side of the transport line, one substrate that has not yet received the first single wafer processing within the tact time, and the received substrate is closest to the first transport mechanism. The first single-wafer processing unit is loaded into the first single-wafer processing unit, the substrate after the first single-wafer processing is unloaded, and the unloaded substrate is transferred to the first single-wafer processing unit. The substrate processing apparatus according to claim 10 , wherein the substrate processing apparatus is stacked on either of the second shuttles. The first processing unit includes a plurality of first single-wafer processing units each repeatedly performing the first single-wafer processing at a constant time difference, and each following the first single-wafer processing at a constant time difference. The substrate processing apparatus according to claim 8 , further comprising a plurality of second single-wafer processing units that repeatedly perform the second single-wafer processing of the process. The first transport mechanism receives, from the upstream side of the transport line, one substrate that has not yet received either the first or second single wafer processing within the tact time, and receives the received substrate. The first single-wafer processing unit that has completed the first single-wafer processing is carried in most recently, and the substrate after the first single-wafer processing is unloaded in place of the first single-wafer processing unit. The substrate is carried into the second single wafer processing unit where the second single wafer processing has been completed most recently, and the second single wafer processing substrate is unloaded in place of the substrate. The substrate processing apparatus according to claim 12 , wherein the unloaded substrate is stacked on either the first or second shuttle. The substrate processing apparatus according to any one of claims 8 to 13 , wherein the second processing unit includes a plurality of first batch processing units that each repeatedly perform the first batch processing at a constant time difference. . The second transport mechanism wholesales, from the first or second shuttle, one substrate that has not yet received the first batch processing within the tact time, The first batch processing unit that has completed the first batch processing is carried into the first batch type processing unit, and the substrate that has finished the first batch processing is unloaded in place of the first batch processing unit. The substrate processing apparatus according to claim 14 , wherein the substrate processing apparatus is stacked on either the third shuttle or the fourth shuttle. The substrate according to any one of claims 8 to 15 , wherein the second processing unit includes a plurality of third single-wafer processing units that each repeatedly perform the third single-wafer processing at a constant time difference. Processing equipment. The second processing unit includes a plurality of third single-wafer processing units each repeatedly performing the third single-wafer processing at a certain time difference, and each following the third single-wafer processing at a certain time difference. repeating the fourth sheet processing steps and a plurality of fourth single-wafer processing units, a substrate processing apparatus according to any one of claims 8-13. The second transport mechanism wholesales, from the first or second shuttle, one substrate that has not yet received any of the third and fourth single wafer processes within the tact time. The wholesaled substrate is carried into the third single-wafer processing unit where the third single-wafer processing has been completed most recently, and the substrate after the third single-wafer processing has been unloaded in place of it. Then, the unloaded substrate is carried into the fourth single-wafer processing unit where the fourth single-wafer processing has been completed most recently, and the fourth single-wafer processing is finished instead. The substrate processing apparatus according to claim 17 , wherein the substrate is unloaded and the unloaded substrate is transferred to a downstream side of the transfer line. Wherein the first and the conveyance of the substrate by the third the transfer of the substrate and by the shuttle of the second and fourth shuttle are alternately performed at a constant tact time, according to any one of claims 7 to 18 Substrate processing equipment. The first and third shuttles load the substrates and move from the first and third loading positions to the first and third unloading positions, respectively, and the second and fourth shuttles are substrates. the act of moving respectively from unloading position of the second and fourth to the product unloading position of the second and fourth are Ru performed simultaneously without accumulated, the substrate processing apparatus according to claim 19. The first transport mechanism loads the substrate onto the first shuttle, the second transport mechanism unloads the substrate from the second shuttle, and the second transport mechanism moves to the third shuttle. 21. The substrate processing apparatus according to claim 19 or 20 , wherein the operation of stacking a substrate and the operation of the third transport mechanism unloading the substrate from the fourth shuttle are performed at independent timings. The first and second transport paths overlap each other at a certain interval,
The third and fourth transport paths overlap each other at a certain interval;
The substrate processing apparatus as described in any one of Claims 7-21 . The second transport mechanism uses one of the second transport arms to unload one substrate from the first or second shuttle at the first or second unloading position; and The operation of loading one substrate on the third or fourth shuttle at the third or fourth loading position is performed simultaneously or in parallel using the other of the two transfer arms. The substrate processing apparatus according to any one of claims 22 to 22. The substrate processing apparatus according to claim 7, wherein the second transport mechanism operates at a fixed position and does not move horizontally. A first loading position that has a first and a second transport path extending in parallel with each other in an arbitrary length and a loading platform on which one substrate is loaded, and is provided at one end of the first transport path And a first shuttle capable of reciprocating on the first transport path between a first unloading position provided at the other end of the first transport path and a loading platform on which one substrate is loaded. And reciprocating on the second conveyance path between a second loading position provided at one end of the second conveyance path and a second unloading position provided at the other end of the second conveyance path. A second possible shuttle, and third and fourth transport paths having one end near the first and second unloading positions and extending parallel to each other in any length therefrom, and a substrate And a third loading position provided at one end of the third conveyance path, and the third conveyance path. A third shuttle capable of reciprocating on the third transport path with a third unloading position provided at the other end; and a loading platform on which one substrate is loaded; and one end of the fourth transport path A fourth shuttle capable of reciprocating on the fourth conveyance path between a fourth loading position provided on the fourth conveyance path and a fourth unloading position provided on the other end of the fourth conveyance path; A first transport mechanism that is accessible to the first and second loading positions and has one or more first transport arms for transporting a substrate within the first area; And a second unloading position and the third and fourth unloading positions are accessible, and each is capable of rotating independently in an azimuth direction for transporting a substrate in the second area. A second transfer mechanism having two second transfer arms, and the third and fourth loads A third transport mechanism having one or a plurality of third transport arms provided so as to be accessible at a position and transporting the substrate in the third area; and a desired single wafer processing or batch processing on the substrate. A substrate processing apparatus having a processing unit disposed in at least one of the first, second, and third areas,
The first transport mechanism uses the first transport arm to stack the substrates one by one on the first or second shuttle at the first or second loading position,
The second transfer mechanism uses the second transfer arm to unload the substrates from the first or second shuttle one by one at the first or second unloading position,
The second transport mechanism uses the second transport arm to stack the substrates one by one on the third or fourth shuttle at the third or fourth loading position,
The third transport mechanism uses the third transport arm to unload the substrates from the third or fourth shuttle one by one at the third or fourth unloading position,
Substrate transport from the first loading position to the first unloading position by the first shuttle, and substrates from the second loading position to the second unloading position by the second shuttle Transfer of the substrate from the third loading position by the third shuttle to the third unloading position, and from the fourth loading position by the fourth shuttle to the fourth unloading. Independently carry the substrate to the position,
Substrate processing method. A transfer line for transferring the substrate to be processed in the horizontal direction from the upstream side to the downstream side of the process flow, and the transfer of the substrate to and from the first processing unit provided on the transfer line and disposed around the transfer line. A first transport mechanism having one or more first transport arms to be performed one by one, and a first transport mechanism provided on the downstream side of the first transport mechanism on the transport line and disposed around the first transport mechanism At least two second transport mechanisms that can independently rotate in the azimuth direction, and transfer one substrate at a time to each other, and constitute a section of the transport line, and the first transport mechanism The first and second loading positions adjacent to the first and second unloading positions adjacent to the second transport mechanism are loaded in a reciprocating manner in which the substrates are stacked one by one and individually conveyed. 1st and 2nd shuttle and front One section of the transfer line is configured, and one substrate is transferred from the third and fourth loading positions adjacent to the second transfer mechanism to the third and fourth unloading positions adjacent to the third transfer mechanism. In a substrate processing apparatus having third and fourth shuttles that can be reciprocated and stacked one by one and conveyed individually.
The first transport mechanism uses the first transport arm to stack the substrates one by one on the first or second shuttle at the first or second loading position,
  The second transfer mechanism uses the second transfer arm to unload the substrates from the first or second shuttle one by one at the first or second unloading position,
The second transport mechanism uses the second transport arm to stack the substrates one by one on the third or fourth shuttle at the third or fourth loading position.
Substrate processing method. 27. The substrate processing method according to claim 26, wherein the transfer of the substrate by the first shuttle and the transfer of the substrate by the second shuttle are alternately performed at a constant tact time. A plurality of first single-wafer processing units included in the first processing unit repeatedly perform the first single-wafer processing with a certain time difference,
A plurality of second single-wafer processing units included in the first processing unit repeatedly perform the second single-wafer processing subsequent to the first single-wafer processing at a constant time difference,
The first transport mechanism receives, from the upstream side of the transport line, one substrate that has not yet received either the first or second single wafer processing within the tact time, and receives the received substrate. The first single-wafer processing unit that has completed the first single-wafer processing is carried in most recently, and the substrate after the first single-wafer processing is unloaded in place of the first single-wafer processing unit. The substrate is carried into the second single wafer processing unit where the second single wafer processing has been completed most recently, and the second single wafer processing substrate is unloaded in place of the substrate. 28. The substrate processing method according to claim 27, wherein the unloaded substrate is stacked on either the first or second shuttle. A plurality of first batch processing units included in the second processing unit repeatedly perform the first batch processing with a certain time difference,
Within the tact time, the second transport mechanism unloads one substrate that has not yet received the first batch processing from either the first or second shuttle, The first batch processing unit that has completed the first batch processing is carried into the first batch type processing unit, and the substrate that has finished the first batch processing is unloaded in place of the first batch processing unit. Load on either the 3rd or 4th shuttle,
29. A substrate processing method according to claim 27 or claim 28. An operation of unloading one substrate from the first or second shuttle at the first or second unloading position using one of the second transfer arms by the second transfer mechanism; 27. The operation of loading one substrate on the third or fourth shuttle at the third or fourth loading position is performed simultaneously or concurrently using the other of the two transfer arms. 30. The substrate processing method according to any one of 29.