JP5469358B2 - Organic transistor - Google Patents
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- JP5469358B2 JP5469358B2 JP2009079321A JP2009079321A JP5469358B2 JP 5469358 B2 JP5469358 B2 JP 5469358B2 JP 2009079321 A JP2009079321 A JP 2009079321A JP 2009079321 A JP2009079321 A JP 2009079321A JP 5469358 B2 JP5469358 B2 JP 5469358B2
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Landscapes
- Thin Film Transistor (AREA)
Description
本発明は、有機トランジスタ（有機薄膜トランジスタ）に関するものである。 The present invention relates to an organic transistor (organic thin film transistor).
近年、有機材料の軽量、柔軟性、低コスト化が可能、などの特徴を活かした有機薄膜デバイスの研究開発が各所で行われている。すでに、電子複写機の分野での有機感光体や表示素子の分野での有機エレクトロルミネッセンス素子（有機ＥＬ素子）など、有機薄膜デバイスの実用化が進んでおり、有機トランジスタについても、フレキシブルシートディスプレイ、電子ペーパーなどのディスプレイ分野、プラスチックＩＣカード、情報タグなどの携帯・ウエアラブル電子機器などの分野で注目が集まっている。 In recent years, research and development of organic thin film devices that take advantage of features such as light weight, flexibility, and cost reduction of organic materials have been conducted in various places. Already, organic thin film devices such as organic photoreceptors in the field of electronic copying machines and organic electroluminescence elements (organic EL elements) in the field of display elements have been put into practical use. For organic transistors, flexible sheet displays, Attracting attention in the fields of displays such as electronic paper, and portable and wearable electronic devices such as plastic IC cards and information tags.
ここにおいて、有機トランジスタは、１９８０年代から低分子材料系や高分子材料系の有機半導体薄膜からなる有機半導体層を用いた有機トランジスタの基礎特性が調べられ、最近では、アモルファスシリコンＴＦＴや多結晶シリコンＴＦＴなどの無機トランジスタにせまるキャリア移動度を持つ有機トランジスタが報告されている（非特許文献１）。 Here, the basic characteristics of organic transistors using organic semiconductor layers composed of organic semiconductor thin films of low molecular materials or high molecular materials have been investigated since the 1980s. Recently, amorphous transistors such as amorphous silicon TFTs and polycrystalline silicons have been investigated. An organic transistor having a carrier mobility that is similar to that of an inorganic transistor such as a TFT has been reported (Non-Patent Document 1).
有機トランジスタとしては、図１２に示すようなボトムコンタクト型の有機トランジスタや、図１３に示すようなトップコンタクト型の有機トランジスタが知られている。 As the organic transistor, a bottom contact type organic transistor as shown in FIG. 12 and a top contact type organic transistor as shown in FIG. 13 are known.
ここにおいて、図１２に示したボトムコンタクト型の有機トランジスタは、基板１の一表面上にゲート電極２が形成されるとともに、ゲート電極２を覆うようにゲート絶縁膜３が形成されており、ゲート絶縁膜３上においてソース電極４とドレイン電極５とが離間して形成され、ゲート絶縁膜３の表面、ソース電極４およびドレイン電極５を覆うように有機半導体層７が形成されている。 Here, the bottom contact type organic transistor shown in FIG. 12 has a gate electrode 2 formed on one surface of the substrate 1 and a gate insulating film 3 so as to cover the gate electrode 2. A source electrode 4 and a drain electrode 5 are formed on the insulating film 3 so as to be separated from each other, and an organic semiconductor layer 7 is formed so as to cover the surface of the gate insulating film 3, the source electrode 4 and the drain electrode 5.
また、図１３に示した構成のトップコンタクト型の有機トランジスタは、基板１の一表面上にゲート電極２が形成されるとともに、ゲート電極２を覆うようにゲート絶縁膜３が形成されており、ゲート絶縁膜３上を覆うように有機半導体層７が形成され、有機半導体層７上においてソース電極４とドレイン電極５とが離間して形成されている。 Further, the top contact type organic transistor having the configuration shown in FIG. 13 has a gate electrode 2 formed on one surface of the substrate 1 and a gate insulating film 3 so as to cover the gate electrode 2. An organic semiconductor layer 7 is formed so as to cover the gate insulating film 3, and the source electrode 4 and the drain electrode 5 are formed on the organic semiconductor layer 7 so as to be separated from each other.
図１２や図１３に示した構成の有機トランジスタでは、ゲート電極２・ソース電極４間に電圧（ゲート電圧）を印加することにより、有機半導体層７にキャリアのチャネルが形成され、ソース電極４・ドレイン電極５間に電流が流れる。ここで、有機トランジスタのデバイス特性は、有機半導体層７のゲート絶縁膜３との界面におけるグレイン（単結晶粒）の大きさの影響を受け、グレインサイズを大きくすることにより、デバイス特性が向上する。なお、ボトムコンタクト型の有機トランジスタのチャネル長は、例えば、２５μｍ程度、トップコンタクト型の有機トランジスタのチャネル長は、例えば、１００μｍ程度である。 In the organic transistor having the configuration shown in FIGS. 12 and 13, by applying a voltage (gate voltage) between the gate electrode 2 and the source electrode 4, a carrier channel is formed in the organic semiconductor layer 7. A current flows between the drain electrodes 5. Here, the device characteristics of the organic transistor are affected by the size of grains (single crystal grains) at the interface between the organic semiconductor layer 7 and the gate insulating film 3, and the device characteristics are improved by increasing the grain size. . The channel length of the bottom contact type organic transistor is, for example, about 25 μm, and the channel length of the top contact type organic transistor is, for example, about 100 μm.
ところで、有機トランジスタのデバイス特性をさらに向上させる手法として、有機半導体層を欠陥の少ない有機半導体単結晶薄膜とすることが考えられる。一方、無機トランジスタの一種である多結晶シリコンＴＦＴにおいては、グレインサイズの大きな多結晶シリコン薄膜を形成する方法として、アモルファスシリコン薄膜上に多数の円柱状のメタルパッドを形成してから、エキシマレーザでアニールすることによりグレインサイズが大きくて且つ均一性が高く結晶性の良い多結晶シリコン薄膜を形成できることが報告されている（非特許文献２）。なお、上記非特許文献２では、メタルパッドの半径を０．７５μｍ、隣り合うメタルパッド間の距離を５μｍに設定した例が開示されている。 By the way, as a method for further improving the device characteristics of the organic transistor, it can be considered that the organic semiconductor layer is an organic semiconductor single crystal thin film with few defects. On the other hand, in a polycrystalline silicon TFT which is a kind of inorganic transistor, as a method of forming a polycrystalline silicon thin film having a large grain size, an excimer laser is used after forming a large number of cylindrical metal pads on an amorphous silicon thin film. It has been reported that a polycrystalline silicon thin film having a large grain size and high uniformity and good crystallinity can be formed by annealing (Non-patent Document 2). Note that Non-Patent Document 2 discloses an example in which the radius of a metal pad is set to 0.75 μm and the distance between adjacent metal pads is set to 5 μm.
ここにおいて、有機トランジスタの製造にあたって、上記非特許文献２に記載の技術を適用することも考えられるが、この場合には有機半導体層が有機半導体多結晶薄膜により構成されているので、グレインバウンダリ（粒界）に起因してデバイス特性の向上が制限されてしまう。 Here, in manufacturing the organic transistor, the technique described in Non-Patent Document 2 may be applied. In this case, since the organic semiconductor layer is formed of an organic semiconductor polycrystalline thin film, the grain boundary ( Improvement in device characteristics is limited due to the grain boundaries.
これに対して、図１４に示すように、基板１の一表面側にゲート電極２が形成されるとともに、ゲート電極２上にゲート絶縁膜３が形成されており、ゲート絶縁膜３におけるゲート電極２側とは反対の表面側においてソース電極４とドレイン電極５とが離間して形成され、ゲート絶縁膜３の上記表面側においてソース電極４とドレイン電極５との間の領域に一部が形成された有機半導体層７とを備え、有機半導体層７の形成にあたって、ゲート絶縁膜３の上記表面上に多数の島状突起からなる有機ナノ構造体６’を形成してから有機半導体層７を蒸着法により形成することで有機半導体層７の結晶性を改善してなる有機トランジスタが提案されている（特許文献１参照）。なお、上記特許文献１においては、有機ナノ構造体６をスピンコート法もしくはスプレー塗布法により形成している。 On the other hand, as shown in FIG. 14, the gate electrode 2 is formed on one surface side of the substrate 1, and the gate insulating film 3 is formed on the gate electrode 2. The source electrode 4 and the drain electrode 5 are formed separately on the surface side opposite to the second side, and a part is formed in the region between the source electrode 4 and the drain electrode 5 on the surface side of the gate insulating film 3. In forming the organic semiconductor layer 7, the organic semiconductor layer 7 is formed after forming the organic nanostructure 6 ′ composed of a number of island-shaped protrusions on the surface of the gate insulating film 3. An organic transistor has been proposed in which the crystallinity of the organic semiconductor layer 7 is improved by forming it by vapor deposition (see Patent Document 1). In Patent Document 1, the organic nanostructure 6 is formed by spin coating or spray coating.
しかしながら、上記特許文献１に開示された有機トランジスタにおいても、単結晶を得ることは難しく（有機ナノ構造体６’の材料によって有機半導体層７のｃ軸配向率が７０〜９５％の範囲で変化している）、有機半導体層の結晶性のより一層の向上が望まれている。 However, even in the organic transistor disclosed in Patent Document 1, it is difficult to obtain a single crystal (the c-axis orientation ratio of the organic semiconductor layer 7 varies in the range of 70 to 95% depending on the material of the organic nanostructure 6 ′. However, further improvement in the crystallinity of the organic semiconductor layer is desired.
本発明は上記事由に鑑みて為されたものであり、有機半導体層の結晶性を向上させることが可能な有機トランジスタを提供することを目的とするものである。 This invention is made | formed in view of the said reason, and it aims at providing the organic transistor which can improve the crystallinity of an organic-semiconductor layer.
請求項１の発明は、基板の一表面側にゲート電極が形成されるとともに、ゲート電極上にゲート絶縁膜が形成されており、ゲート絶縁膜におけるゲート電極側とは反対の表面側においてソース電極とドレイン電極とが離間して形成され、ゲート絶縁膜の前記表面側において少なくともソース電極とドレイン電極との間の領域に形成された有機半導体層とを備えた有機トランジスタであって、有機半導体層とゲート絶縁膜との間に自己組織化単分子膜が設けられ、有機半導体層は、自己組織化単分子膜におけるゲート絶縁膜側とは反対の表面において少なくともソース電極とドレイン電極との間の領域に形成した多数の有機ナノ構造体を核として形成された有機半導体薄膜からなることを特徴とする。 According to the first aspect of the present invention, a gate electrode is formed on one surface side of a substrate, a gate insulating film is formed on the gate electrode, and a source electrode is formed on the surface side of the gate insulating film opposite to the gate electrode side. And an drain electrode, and an organic semiconductor layer comprising an organic semiconductor layer formed at least in a region between the source electrode and the drain electrode on the surface side of the gate insulating film, wherein the organic semiconductor layer A self-assembled monomolecular film is provided between the gate insulating film and the organic semiconductor layer at least between the source electrode and the drain electrode on the surface opposite to the gate insulating film side of the self-assembled monomolecular film. It is characterized by comprising an organic semiconductor thin film formed using a large number of organic nanostructures formed in a region as a nucleus.
この発明によれば、自己組織化単分子膜により各有機ナノ構造体の下地表面の表面エネルギーを制御することができ、ゲート絶縁膜上に各有機ナノ構造体を形成する場合に比べて、有機ナノ構造体のアスペクト比を大きくすることが可能となって、有機半導体層の結晶性を向上させることが可能となる。 According to the present invention, the surface energy of the base surface of each organic nanostructure can be controlled by the self-assembled monomolecular film, and compared with the case where each organic nanostructure is formed on the gate insulating film, The aspect ratio of the nanostructure can be increased, and the crystallinity of the organic semiconductor layer can be improved.
請求項１の発明では、有機半導体層の結晶性を向上させることが可能になるという効果がある。 According to the first aspect of the invention, there is an effect that the crystallinity of the organic semiconductor layer can be improved.
（実施形態１）
本実施形態の有機トランジスタは、ボトムコンタクト型の有機トランジスタであって、図１に示すように、基板１の一表面側にゲート電極２が形成されるとともに、ゲート電極２上にゲート絶縁膜３が形成されており、ゲート絶縁膜３におけるゲート電極２側とは反対の表面側においてソース電極４とドレイン電極５とが離間して形成され、ゲート絶縁膜３の上記表面側においてソース電極４とドレイン電極５との間の領域に一部が形成された有機半導体層７とを備えている。なお、有機半導体層７は、ゲート絶縁膜３の上記表面側において少なくともソース電極４とドレイン電極５との間の領域に形成されていればよい。
(Embodiment 1)
The organic transistor of this embodiment is a bottom contact type organic transistor. As shown in FIG. 1, a gate electrode 2 is formed on one surface side of a substrate 1 and a gate insulating film 3 is formed on the gate electrode 2. The source electrode 4 and the drain electrode 5 are formed apart from each other on the surface side opposite to the gate electrode 2 side of the gate insulating film 3, and the source electrode 4 is formed on the surface side of the gate insulating film 3. And an organic semiconductor layer 7 partially formed in a region between the drain electrode 5. The organic semiconductor layer 7 may be formed at least in a region between the source electrode 4 and the drain electrode 5 on the surface side of the gate insulating film 3.
また、本実施形態の有機トランジスタは、有機半導体層７とゲート絶縁膜３との間に自己組織化単分子膜（self-assembled monolayer：ＳＡＭ膜）８が設けられており、有機半導体層７は、自己組織化単分子膜８におけるゲート絶縁膜３側とは反対の表面においてソース電極４とドレイン電極５との間の領域に形成した多数の有機ナノ構造体（有機ナノドット）６を核として形成された有機半導体薄膜により構成されている。要するに、本実施形態の有機トランジスタは、ゲート電極２上のゲート絶縁膜３上に自己組織化単分子膜８が形成され、自己組織化単分子膜８上にソース電極４、ドレイン電極５および各有機ナノ構造体６が形成され、有機半導体層７が自己組織化単分子膜８の表面、ソース電極４、ドレイン電極５および各有機ナノ構造体６を覆うように形成されている。 In the organic transistor of this embodiment, a self-assembled monolayer (SAM film) 8 is provided between the organic semiconductor layer 7 and the gate insulating film 3, and the organic semiconductor layer 7 is , A large number of organic nanostructures (organic nanodots) 6 formed in the region between the source electrode 4 and the drain electrode 5 on the surface opposite to the gate insulating film 3 side in the self-assembled monomolecular film 8 are formed as nuclei. It is comprised by the made organic-semiconductor thin film. In short, in the organic transistor of this embodiment, the self-assembled monolayer 8 is formed on the gate insulating film 3 on the gate electrode 2, and the source electrode 4, the drain electrode 5, and each of the self-assembled monolayer 8 are formed on the self-assembled monolayer 8. An organic nanostructure 6 is formed, and an organic semiconductor layer 7 is formed so as to cover the surface of the self-assembled monolayer 8, the source electrode 4, the drain electrode 5, and each organic nanostructure 6.
上述の基板１としては、表面にシリコン酸化膜を形成したシリコン基板を用いているが、これに限らず、例えば、ガラス基板、石英基板、プラスチック基板、多結晶シリコン基板、アモルファスシリコン基板、ＩＴＯ基板などを用いてもよいし、これらを適宜組み合わせた複合基板を用いてもよい。なお、基板１として、ガラス基板、石英基板、透明なプラスチック基板、ＩＴＯ基板などの透光性基板を用いれば、基板１上に有機トランジスタの他に有機ＥＬ素子や有機太陽電池などの有機光電変換素子を形成して基板１の他表面を光機能面（有機ＥＬ素子においては光出射面、有機太陽電池においては光入射面）とすることもできる。 As the substrate 1, a silicon substrate having a silicon oxide film formed on the surface is used. However, the substrate 1 is not limited to this. For example, a glass substrate, a quartz substrate, a plastic substrate, a polycrystalline silicon substrate, an amorphous silicon substrate, an ITO substrate is used. Or a composite substrate in which these are appropriately combined may be used. If a light-transmitting substrate such as a glass substrate, a quartz substrate, a transparent plastic substrate, or an ITO substrate is used as the substrate 1, an organic photoelectric conversion such as an organic EL element or an organic solar cell in addition to an organic transistor is provided on the substrate 1. An element may be formed so that the other surface of the substrate 1 is an optical functional surface (a light emitting surface in the case of an organic EL element and a light incident surface in the case of an organic solar cell).
また、ゲート電極２、ソース電極４、およびドレイン電極５それぞれの電極材料は、導電性材料であればよく、特に限定するものではない。ここで、電極材料としては、例えば、ＩＴＯ、金、銀、白金、銅、ナトリウム、ナトリウム−カリウム合金、リチウム、マグネシウム、マグネシウム−銀混合物、マグネシウム−インジウム混合物、アルミニウム−リチウム合金、Ａｌ／ＬｉＦ混合物などを挙げることができる。 The electrode material of each of the gate electrode 2, the source electrode 4, and the drain electrode 5 may be any conductive material and is not particularly limited. Here, as the electrode material, for example, ITO, gold, silver, platinum, copper, sodium, sodium-potassium alloy, lithium, magnesium, magnesium-silver mixture, magnesium-indium mixture, aluminum-lithium alloy, Al / LiF mixture And so on.
ゲート絶縁膜３の材料としては、種々の絶縁材料を用いることができ、無機化合物あるいは有機高分子化合物が好ましい。ゲート絶縁膜３の材料として用いる無機化合物としては、例えば、酸化ケイ素、窒化ケイ素、酸化アルミニウムなどを挙げることができる。また、ゲート絶縁膜３の材料として用いる有機高分子化合物としては、例えば、ポリイミド、ポリアミド、ポリエステル、光ラジカル重合系の光硬化性樹脂などを挙げることができる。 As the material of the gate insulating film 3, various insulating materials can be used, and an inorganic compound or an organic polymer compound is preferable. Examples of the inorganic compound used as the material of the gate insulating film 3 include silicon oxide, silicon nitride, and aluminum oxide. Examples of the organic polymer compound used as the material of the gate insulating film 3 include polyimide, polyamide, polyester, and photo-radical polymerization photo-curing resin.
有機ナノ構造体６の形状は、円柱状としてあるが、これに限らず、例えば、上端面と下端面とで直径が異なる柱状でもよいし、半球状でもよい。ここで、有機トランジスタの分野では、チャネル長を短くすることによる高速化・高集積化が進められており、有機ナノ構造体６の粒径は、１μｍ未満で設定することが望ましい。 The shape of the organic nanostructure 6 is a cylindrical shape, but is not limited thereto, and may be, for example, a columnar shape having a different diameter at the upper end surface and the lower end surface, or may be a hemispherical shape. Here, in the field of organic transistors, higher speed and higher integration are being promoted by shortening the channel length, and it is desirable to set the particle size of the organic nanostructure 6 to less than 1 μm.
また、有機ナノ構造体６、有機半導体層７に用いられる有機半導体材料は、キャリア輸送材料であることが好ましく、正孔輸送材料としては、正孔を輸送する能力を有するとともに電子をブロックするような特性を有する化合物が挙げられる。具体的には、セキシチオフェン（α―６Ｔ）、フタロシアニン誘導体、ナフタロシアニン誘導体、ポルフィリン誘導体、Ｎ，Ｎ’−ビス(３−メチルフェニル)−(１，１’−ビフェニル)−４，４’−ジアミン（ＴＰＤ）や４，４’−ビス［Ｎ−（ナフチル）−Ｎ−フェニル−アミノ］ビフェニル（α−ＮＰＤ）などの芳香族ジアミン化合物、オキサゾール、オキサジアゾール、トリアゾール、イミダゾール、イミダゾロン、スチルベン誘導体、ピラゾリン誘導体、テトラヒドロイミダゾール、ポリアリールアルカン、ブタジエン、４，４’，４”−トリス（Ｎ−（３−メチルフェニル）Ｎ−フェニルアミノ）トリフェニルアミン（ｍ−ＭＴＤＡＴＡ）、およびポリビニルカルバゾール、ポリシラン、アミノピリジン誘導体、ポリエチレンジオキサイドチオフェン（ＰＥＤＯＴ）などの導電性高分子などの高分子材料が挙げられるが、これらに限定されるものではない。 The organic semiconductor material used for the organic nanostructure 6 and the organic semiconductor layer 7 is preferably a carrier transport material, and the hole transport material has the ability to transport holes and blocks electrons. And compounds having various characteristics. Specifically, sexithiophene (α-6T), phthalocyanine derivatives, naphthalocyanine derivatives, porphyrin derivatives, N, N′-bis (3-methylphenyl)-(1,1′-biphenyl) -4,4 ′ -Aromatic diamine compounds such as diamine (TPD) and 4,4′-bis [N- (naphthyl) -N-phenyl-amino] biphenyl (α-NPD), oxazole, oxadiazole, triazole, imidazole, imidazolone, Stilbene derivatives, pyrazoline derivatives, tetrahydroimidazole, polyarylalkanes, butadiene, 4,4 ′, 4 ″ -tris (N- (3-methylphenyl) N-phenylamino) triphenylamine (m-MTDATA), and polyvinylcarbazole , Polysilane, aminopyridine derivatives, polyethylene dioxide Polymeric materials such as conductive polymers such as id thiophene (PEDOT), and the like, but not limited thereto.
また、有機ナノ構造体６、有機半導体層７に用いる材料としては、テトラチオフルバレン、テトラフェニルテトラチオフルバレンなどの電気伝導性有機電荷移動錯体を用いることもできるが、電気伝導性有機電荷移動錯体は錯体としての機能があればこれらに限定されるものではない。 In addition, as a material used for the organic nanostructure 6 and the organic semiconductor layer 7, an electroconductive organic charge transfer complex such as tetrathiofulvalene or tetraphenyltetrathiofulvalene can be used. The transfer complex is not limited to these as long as it has a function as a complex.
有機ナノ構造体６、有機半導体層７の有機半導体材料としては、電子を供与する導電性高分子として、例えば、ポリ(３−アルキルチオフェン)、ポリパラフェニレンビニレン誘導体、ポリフルオレン誘導体、導電性高分子のオリゴマーなどのトルエンなどの有機溶媒に可溶なものが挙げられるが、特にこれに限定されるものではない。 Examples of the organic semiconductor material of the organic nanostructure 6 and the organic semiconductor layer 7 include, for example, poly (3-alkylthiophene), polyparaphenylene vinylene derivatives, polyfluorene derivatives, high conductivity, as conductive polymers that donate electrons. Although what is soluble in organic solvents, such as toluene, such as an oligomer of a molecule | numerator, is mentioned, It does not specifically limit to this.
また、有機ナノ構造体６、有機半導体層７に用いられる有機半導体材料として用いる電子輸送材料としては、例えば、バソクプロイン、バソフェナントロリン、およびそれらの誘導体、ＴＰＢｉ、シロール化合物、トリアゾール化合物、トリス（８−ヒドロキシキノリナート）アルミニウム錯体、ビス（４−メチル−８−キノリナート）アルミニウム錯体、オキサジアゾール化合物、ジスチリルアリレーン誘導体、シロール化合物、ＴＰＢＩ（２，２’，２”−（１，３，５−ベンゼントリル）トリス−［１−フェニル−１Ｈ−ベンツイミダゾール］）、Ｃ６０のようなフラーレンなどがあげられるが、電子輸送性の材料であれば特にこれらに限定されるものでない。また電子移動度としては、１０−６ｃｍ２／Ｖｓ以上、より好ましくは１０−５ｃｍ２／Ｖｓ以上の材料が良い。 Examples of the electron transport material used as the organic semiconductor material used for the organic nanostructure 6 and the organic semiconductor layer 7 include bathocuproine, bathophenanthroline, and derivatives thereof, TPBi, silole compound, triazole compound, tris (8- Hydroxyquinolinato) aluminum complex, bis (4-methyl-8-quinolinato) aluminum complex, oxadiazole compound, distyrylarylene derivative, silole compound, TPBI (2,2 ′, 2 ″-(1,3,3) 5-benzene-tolyl) tris -. [1-phenyl -1H- benzimidazole]), although such a fullerene such as C 60 and the like, not particularly limited thereto as long as it is an electron-transporting materials are also electronic the mobility, 10 -6 cm 2 / Vs or more, more preferably 0 -5 cm 2 / Vs or more materials is good.
有機ナノ構造体６、有機半導体層７の有機半導体材料としては、電子を授受し輸送する材料として、化合物半導体粒子、特に粒径が１ｎｍ〜１００ｎｍ程度の化合物半導体ナノ結晶を用いてもよい。また、化合物半導体ナノ結晶の形状は、特に限定するものではないが、円柱状（ロッド状）、球状、テトラポッド状でもよい。ここで、化合物半導体ナノ結晶の具体的な材料としては、ＩｎＰ、ＩｎＡｓ、ＧａＰ、ＧａＡｓなどのIII−Ｖ族化合物半導体結晶、ＣｄＳｅ、ＣｄＳ、ＣｄＴｅ、ＺｎＳなどのII−VI族化合物半導体結晶、ＺｎＯ、ＳｉＯ２、ＴｉＯ２、Ａｌ２Ｏ３などの酸化物半導体結晶、ＣｕＩｎＳｅ２、ＣｕＩｎＳなどが挙げられるが、特にこれに限定されるものではない。また、電子を輸送する材料であれば、これに限らず、フラーレン誘導体などからなる低分子材料や導電性高分子なども用いることができる。 As the organic semiconductor material of the organic nanostructure 6 and the organic semiconductor layer 7, compound semiconductor particles, particularly compound semiconductor nanocrystals having a particle diameter of about 1 nm to 100 nm may be used as a material for transferring and transporting electrons. Further, the shape of the compound semiconductor nanocrystal is not particularly limited, but may be cylindrical (rod-shaped), spherical, or tetrapod-shaped. Here, specific materials of the compound semiconductor nanocrystal include III-V compound semiconductor crystals such as InP, InAs, GaP, and GaAs, II-VI group compound semiconductor crystals such as CdSe, CdS, CdTe, and ZnS, and ZnO. Examples thereof include oxide semiconductor crystals such as SiO 2 , TiO 2 , and Al 2 O 3 , CuInSe 2 , and CuInS, but are not particularly limited thereto. In addition, the material is not limited to this as long as it transports electrons, and a low molecular material or a conductive polymer made of a fullerene derivative or the like can also be used.
以上説明した有機ナノ構造体６と有機半導体層７とは、同一材料により形成してもよいし、異種材料により形成してもよい。また、有機ナノ構造体６と有機半導体層７とは形成時間以外を同じとした条件で形成してもよいし、異なる条件で形成してもよい。 The organic nanostructure 6 and the organic semiconductor layer 7 described above may be formed of the same material or different materials. The organic nanostructure 6 and the organic semiconductor layer 7 may be formed under the same conditions except for the formation time, or may be formed under different conditions.
ところで、有機ナノ構造体６の形成方法としては、真空蒸着法を採用しているが、これに限らず、例えば、スピンコート法、ラングミュア・ブロジェット（Langmuir-Blodgett：ＬＢ）法、エピタキシャル成長法（例えば、MolecularBeam Epitaxy （ＭＢＥ）法）などを採用してもよく、所望の有機ナノ構造体６を形成できる形成方法であれば、この限りではない。 By the way, the method of forming the organic nanostructure 6 employs a vacuum deposition method, but is not limited thereto. For example, a spin coating method, a Langmuir-Blodgett (LB) method, an epitaxial growth method ( For example, MolecularBeam Epitaxy (MBE) method) may be employed, and this is not a limitation as long as the formation method can form a desired organic nanostructure 6.
なお、スピンコート法により有機ナノ構造体を形成する方法は、上記特許文献１に記載され、また、スピンコート法やＬＢ法により有機ナノ構造体を形成する方法は、刊行物１(Tomoyuki Akutagawa,et,al,「MolecularlyAssembled Nanostructures of a Redox-Active Organogelator」,Angew.Chem.Int.Ed.,44, ,2005,p.7283-7287)に記載されており、ＭＢＥ法により有機ナノ構造体を形成する方法は、刊行物２（奥山博基、外５名，「分子ナノデバイス実現へ向けたＣ６０超薄膜形成」，信学技報，社団法人 電子情報通信学会，OME2004-124(2005-01)）に記載されている。ただし、スピンコート法により有機ナノ構造体を形成する方法では、不純物の影響が大きい、材料の制約が大きい、有機ナノ構造体の面内分布の均一性が低い、などの課題があり、ＬＢ法により有機ナノ構造体を形成する方法では、不純物の影響が大きい、材料の制約が大きい、などの課題があり、ＭＢＥ法により形成する方法では、基板および有機ナノ構造体それぞれの材料や基板の形状の制約が大きい、ＭＢＥ装置が高価である、などの課題がある。これに対して、一般的な真空蒸着法により有機ナノ構造体を形成するようにすれば、不純物の影響が少ない、真空下で昇華する材料であればよいので、材料の制約が少ない、有機ナノ構造体の面内分布の均一性が高くなる、などの利点がある。 A method for forming an organic nanostructure by a spin coating method is described in Patent Document 1, and a method for forming an organic nanostructure by a spin coating method or an LB method is described in Publication 1 (Tomoyuki Akutagawa, et.al, “Molecularly Assembled Nanostructures of a Redox-Active Organogelator”, Angew. Chem. Int. Ed., 44,, 2005, p.7283-7287), forming organic nanostructures by MBE method The method to do is publication 2 (Hiroki Okuyama, 5 others, “C 60 ultrathin film formation for the realization of molecular nanodevices”, IEICE Technical Report, The Institute of Electronics, Information and Communication Engineers, OME2004-124 (2005-01) )It is described in. However, the method of forming the organic nanostructure by the spin coating method has problems such as large influence of impurities, large material restrictions, and low uniformity of in-plane distribution of the organic nanostructure. In the method of forming an organic nanostructure by the method, there are problems such as large influence of impurities and large material restrictions. In the method of forming by the MBE method, the material of each of the substrate and the organic nanostructure and the shape of the substrate There are problems such as large restrictions on the cost, and expensive MBE devices. On the other hand, if the organic nanostructure is formed by a general vacuum deposition method, it is sufficient to use a material that is sublimated under vacuum with little influence of impurities. There are advantages such as high uniformity of in-plane distribution of the structure.
ここにおいて、有機ナノ構造体６の形状については、例えば、真空蒸着法により形成する場合、有機ナノ構造体６の有機材料、蒸着膜厚、蒸着速度、基板温度、有機ナノ構造体６形成前後のアニール、下地の材料（ここでは、自己組織化単分子膜８の材料）、などによって制御することができる。 Here, regarding the shape of the organic nanostructure 6, for example, when formed by a vacuum deposition method, the organic material of the organic nanostructure 6, the deposition film thickness, the deposition rate, the substrate temperature, before and after the formation of the organic nanostructure 6. It can be controlled by annealing, the underlying material (here, the material of the self-assembled monolayer 8), or the like.
自己組織化単分子膜８は、例えば、ヘキサメチルジシラザン（（ＣＨ３）３ＳｉＮＨＳｉ（ＣＨ３）３：ＨＭＤＳ）、オクタデシルトリクロロシラン（ＣＨ３(ＣＨ２)１７ＳｉＣｌ３：ＯＴＳ）などのシラン化合物などを用いて形成すればよく、蒸気状のＨＭＤＳ雰囲気に基板１の上記一表面側のゲート絶縁膜３表面を暴露させることにより形成してもよいし、上記化合物が溶解した溶液に浸すことによって形成するようにしてもよく、ゲート絶縁膜３上に自己組織化単分子膜８を形成可能な化合物であれば、これに限らない。なお、ＨＭＤＳ蒸気に曝した場合の自己組織化単分子膜８は、（ＣＨ３）３ＳｉＯにより形成され、また、ＯＴＳ蒸気に曝した場合の自己組織化単分子膜８は、ＣＨ３(ＣＨ２)１７ＳｉＯ３により形成される。 The self-assembled monolayer 8 is made of, for example, silane such as hexamethyldisilazane ((CH 3 ) 3 SiNHSi (CH 3 ) 3 : HMDS), octadecyltrichlorosilane (CH 3 (CH 2 ) 17 SiCl 3 : OTS). It may be formed using a compound or the like, and may be formed by exposing the surface of the gate insulating film 3 on the one surface side of the substrate 1 to a vapor-like HMDS atmosphere, or immersed in a solution in which the compound is dissolved. However, the present invention is not limited to this as long as the compound can form the self-assembled monolayer 8 on the gate insulating film 3. The self-assembled monolayer 8 when exposed to HMDS vapor is formed of (CH 3 ) 3 SiO, and the self-assembled monolayer 8 when exposed to OTS vapor is CH 3 (CH 2 ) It is formed of 17 SiO 3 .
ここにおいて、シリコン基板に熱酸化法により膜厚が３００ｎｍのシリコン酸化膜を形成した実験用基板を用い、当該実験用基板の一表面側にＨＭＤＳ処理による自己組織化単分子膜８を成膜し、その後、有機半導体材料として、薄膜形成時にアモルファス性の有機薄膜が形成されるＴＰＤを採用し、真空蒸着装置のチャンバ内の真空度を４．０×１０−４Ｐａ、蒸着速度を０．０１ｎｍ／ｓ、蒸着膜厚を１ｎｍ、５ｎｍ、１０ｎｍ、２０ｎｍ、５０ｎｍとすることで有機ナノ構造体６を形成する実験１を行った試料の表面をＡＦＭ（原子間力顕微鏡）により観察した結果（ＡＦＭ像図のスケールは５μｍ×５μｍ）を図２の下段に示す。ただし、蒸着膜厚は、水晶振動子にて計測した値であって、平均膜厚である。また、粒径は、ＡＦＭ像図から読み取った値である。ここで、実験用基板への自己組織化単分子膜８の成膜前の前処理としては、濃度が９８％の硫酸と濃度が３０％の過酸化水素水とを体積比４対１で混合して７０℃に加温した硫酸過水に１０分間だけ浸漬することで実験用基板の表面に付着している有機物の除去を行い、実験用基板の表面を親水化した。さらに、純水で十分に硫酸過水を洗い流した後、純水、アセトン、イソプロピルアルコールそれぞれで５分間の超音波洗浄を行い、自己組織化単分子膜８の成膜直前に、ＵＶ光およびオゾンを１０分間だけ照射した。また、自己組織化単分子膜８を成膜するＨＭＤＳ処理では、７０℃に加熱したＨＭＤＳ蒸気に３０分間だけ曝すことでＨＭＤＳの構成分子の一部を実験用基板の上記一表面側に化学吸着させた。 Here, an experimental substrate in which a silicon oxide film having a thickness of 300 nm is formed on a silicon substrate by thermal oxidation is used, and a self-assembled monomolecular film 8 is formed on one surface side of the experimental substrate by HMDS treatment. Then, TPD in which an amorphous organic thin film is formed at the time of thin film formation is adopted as the organic semiconductor material, the degree of vacuum in the chamber of the vacuum vapor deposition apparatus is 4.0 × 10 −4 Pa, and the vapor deposition rate is 0.01 nm. / S, the result of observing the surface of the sample on which the experiment 1 for forming the organic nanostructure 6 was performed by setting the deposited film thickness to 1 nm, 5 nm, 10 nm, 20 nm, and 50 nm by an AFM (atomic force microscope) (AFM) The scale of the image figure is 5 μm × 5 μm) is shown in the lower part of FIG. However, the vapor deposition film thickness is a value measured by a quartz resonator and is an average film thickness. The particle size is a value read from the AFM image diagram. Here, as a pretreatment before forming the self-assembled monolayer 8 on the experimental substrate, sulfuric acid having a concentration of 98% and hydrogen peroxide water having a concentration of 30% are mixed at a volume ratio of 4: 1. Then, the organic substance adhering to the surface of the experimental substrate was removed by immersing it in sulfuric acid / hydrogen peroxide heated to 70 ° C. for 10 minutes to make the surface of the experimental substrate hydrophilic. Further, after sufficiently washing away sulfuric acid / hydrogen peroxide with pure water, ultrasonic cleaning is performed with pure water, acetone, and isopropyl alcohol for 5 minutes, respectively, and UV light and ozone are formed immediately before the self-assembled monolayer 8 is formed. Was irradiated for 10 minutes. In the HMDS process for forming the self-assembled monomolecular film 8, a part of the constituent molecules of HMDS is chemically adsorbed on the one surface side of the experimental substrate by exposing it to HMDS vapor heated to 70 ° C. for 30 minutes. I let you.
また、自己組織化単分子膜８を形成せずに有機ナノ構造体６を形成する点以外は実験１と同様の比較実験１を行った結果を図２の上段に示す。 Moreover, the upper part of FIG. 2 shows the result of Comparative Experiment 1 similar to Experiment 1 except that the organic nanostructure 6 is formed without forming the self-assembled monolayer 8.
また、有機半導体材料として薄膜形成時にアモルファス性の有機薄膜が形成されるα−ＮＰＤを用いた以外は実験１と同じ実験２を行った試料の表面をＡＦＭにより観察した結果（ＡＦＭ像図のスケールは５μｍ×５μｍ）を図３の下段に示す。 Moreover, the result of having observed the surface of the sample which performed the same experiment 2 as experiment 1 except having used the alpha-NPD in which an amorphous organic thin film was formed at the time of thin film formation as an organic-semiconductor material (scale of an AFM image figure) Is 5 μm × 5 μm) in the lower part of FIG.
また、自己組織化単分子膜８を形成せずに有機ナノ構造体６を形成する点以外は実験２と同様の比較実験２を行った結果を図３の上段に示す。 Moreover, the upper part of FIG. 3 shows the result of Comparative Experiment 2 similar to Experiment 2 except that the organic nanostructure 6 is formed without forming the self-assembled monolayer 8.
また、有機半導体材料として薄膜形成時に結晶性の有機薄膜が形成されるα―６Ｔを用いた以外は実験１と同様の実験３を行った試料の表面をＡＦＭにより観察した結果（ＡＦＭ像図のスケールは５μｍ×５μｍ）を図４の下段に示す。 Moreover, the result of having observed the surface of the sample which performed the experiment 3 similar to the experiment 1 by AFM except having used (alpha) -6T in which a crystalline organic thin film is formed at the time of thin film formation as an organic semiconductor material (AFM image figure of The scale is 5 μm × 5 μm) in the lower part of FIG.
また、自己組織化単分子膜８を形成せずに有機ナノ構造体６を形成する点以外は実験３と同様の比較実験３を行った結果を図４の上段に示す。 4 shows the results of Comparative Experiment 3 similar to Experiment 3 except that the organic nanostructure 6 is formed without forming the self-assembled monolayer 8.
また、有機半導体材料として薄膜形成時に結晶性ないしアモルファス性の有機薄膜が形成されるフラーレン（Ｃ６０）を用いた以外は実験１と同様の実験４を行った試料の表面をＡＦＭにより観察した結果（ＡＦＭ像図のスケールは５μｍ×５μｍ）を図５の下段に示す。 Observation of the surface other than using fullerene (C 60) of crystalline or amorphous organic thin film during film formation is formed as an organic semiconductor material was subjected to the same experiment as Experiment 1 4 sample by AFM (AFM image scale is 5 μm × 5 μm) is shown in the lower part of FIG.
また、自己組織化単分子膜８を形成せずに有機ナノ構造体６を形成する点以外は実験４と同様の比較実験４を行った結果を図５の上段に示す。 Moreover, the upper part of FIG. 5 shows the result of Comparative Experiment 4 similar to Experiment 4 except that the organic nanostructure 6 is formed without forming the self-assembled monolayer 8.
また、実験１と同様の条件で、蒸着膜厚を１０ｎｍとし、蒸着速度を０．０１ｎｍ／ｓ、０．１ｎｍ／ｓ、１ｎｍ／ｓの３種類とした実験５を行った試料の表面をＡＦＭにより観察した結果（ＡＦＭ像図のスケールは５μｍ×５μｍ）を図６の下段に示す。 In addition, the surface of the sample in which the experiment 5 was conducted under the same conditions as in the experiment 1 with the deposition film thickness being 10 nm and the deposition rate being 0.01 nm / s, 0.1 nm / s, and 1 nm / s was performed with the AFM. (AFM image scale is 5 μm × 5 μm) is shown in the lower part of FIG.
また、自己組織化単分子膜８を形成せずに有機ナノ構造体６を形成する点以外は実験５と同様の比較実験５を行った結果を図６の上段に示す。 Further, the upper part of FIG. 6 shows the results of Comparative Experiment 5 similar to Experiment 5 except that the organic nanostructure 6 is formed without forming the self-assembled monolayer 8.
また、実験１と同様の条件で、蒸着時の実験用基板の温度を常温、１００℃とし、蒸着膜厚（平均膜厚）を１ｎｍ、５ｎｍ、１０ｎｍとした実験６を行った試料の表面をＡＦＭにより観察した結果（ＡＦＭ像図のスケールは５μｍ×５μｍ）を図７の下段に示す。 Further, under the same conditions as in Experiment 1, the surface of the sample on which Experiment 6 was performed, in which the temperature of the experimental substrate during vapor deposition was normal temperature and 100 ° C., and the vapor deposition film thickness (average film thickness) was 1 nm, 5 nm, and 10 nm. The result of observation by AFM (AFM image scale is 5 μm × 5 μm) is shown in the lower part of FIG.
また、自己組織化単分子膜８を形成せずに有機ナノ構造体６を形成する点以外は実験６と同様の比較実験６を行った結果を図７の上段に示す。 Moreover, the upper part of FIG. 7 shows the results of Comparative Experiment 6 similar to Experiment 6 except that the organic nanostructure 6 is formed without forming the self-assembled monolayer 8.
上述の図２〜図７において、実験１〜６と対応する比較実験１〜６との比較から、自己組織化単分子膜８を形成することにより、表面エネルギーを変化させることができることが分かり、有機ナノ構造体６の材料、蒸着速度、基板温度を適宜設定することによって、有機ナノ構造体６の形状を制御できることが分かる。 In FIGS. 2 to 7 described above, it can be seen from comparison between Experiments 1 to 6 and Comparative Experiments 1 to 6 that the surface energy can be changed by forming the self-assembled monolayer 8. It can be seen that the shape of the organic nanostructure 6 can be controlled by appropriately setting the material, vapor deposition rate, and substrate temperature of the organic nanostructure 6.
また、上述の実験１および比較実験１の結果に基づいて、円柱状のナノドットからなる有機ナノ構造体６の直径および高さの蒸着膜厚依存性をＨＭＤＳ処理の有無で比較した結果を図８に示す。 Moreover, based on the result of the above-mentioned experiment 1 and the comparative experiment 1, the result of having compared the vapor deposition film thickness dependence of the diameter and height of the organic nanostructure 6 which consists of cylindrical nanodot by the presence or absence of HMDS process is shown in FIG. Shown in
図８から、自己組織化単分子膜８を形成した場合には、自己組織化単分子膜８を形成していない場合に比べて、蒸着膜厚に関わらず、よりアスペクト比（高さ／直径）が大きく高低差の大きい有機ナノ構造体６が形成されていることが分かる。特に、蒸着膜厚が２０ｎｍのときには、自己組織化単分子膜８を形成していない場合、高さが約１００ｎｍ、直径が約１０００ｎｍで、アスペクト比が約０．１であるのに対して、自己組織化単分子膜８を形成した場合、高さが約１５０ｎｍ、直径が約６００ｎｍで、アスペクト比が約０．２５であり、アスペクト比が約２．５倍になっている。 FIG. 8 shows that when the self-assembled monolayer 8 is formed, the aspect ratio (height / diameter) is higher regardless of the deposited film thickness than when the self-assembled monolayer 8 is not formed. It can be seen that the organic nanostructure 6 having a large height difference is formed. In particular, when the deposited film thickness is 20 nm, when the self-assembled monolayer 8 is not formed, the height is about 100 nm, the diameter is about 1000 nm, and the aspect ratio is about 0.1. When the self-assembled monolayer 8 is formed, the height is about 150 nm, the diameter is about 600 nm, the aspect ratio is about 0.25, and the aspect ratio is about 2.5 times.
ここにおいて、有機ナノ構造体６の形成時に、先に形成された有機ナノ構造体６上に、有機半導体材料の分子が吸着すると有機ナノ構造体６の下地表面の面積が増加するので、有機ナノ構造体６の下地表面の表面エネルギーが高くなる。これに対して、近接する有機ナノ構造体６間に有機半導体材料の分子が吸着すると有機ナノ構造体６の下地表面の面積が減少するので、有機ナノ構造体６の下地表面の表面エネルギーが低くなり、有機ナノ構造体６上には分子が吸着しにくくなる一方で、有機ナノ構造体６間に分子が吸着されやすくなり、表面が平坦化される（連続膜ないし網目構造が形成される）。つまり、有機ナノ構造体６の形状制御には、下地表面−分子間および分子−分子間のエネルギー差（濡れ性）だけではなく、有機ナノ構造体６のエネルギー的な安定性も強く関与するため、蒸着膜厚も重要なファクタとなる。 Here, when the organic nanostructure 6 is formed, if the molecules of the organic semiconductor material are adsorbed on the organic nanostructure 6 formed earlier, the area of the base surface of the organic nanostructure 6 increases. The surface energy of the underlying surface of the structure 6 is increased. On the other hand, when the molecules of the organic semiconductor material are adsorbed between the adjacent organic nanostructures 6, the surface area of the underlying surface of the organic nanostructure 6 is reduced, so that the surface energy of the underlying surface of the organic nanostructure 6 is low. Thus, while it becomes difficult for molecules to be adsorbed on the organic nanostructure 6, the molecules are easily adsorbed between the organic nanostructures 6 and the surface is flattened (a continuous film or network structure is formed). . In other words, the shape control of the organic nanostructure 6 is strongly involved not only in the energy difference (wetting property) between the underlying surface-molecules and between the molecules-molecules but also in the energy stability of the organic nanostructures 6. The deposited film thickness is also an important factor.
また、ゲート絶縁膜３上にＨＭＤＳ処理による自己組織化単分子膜８を形成する前とＨＭＤＳ処理による自己組織化単分子膜８を形成した後とのそれぞれについて、基板１の上記一表面側の最表面に対する純水の接触角を測定したところ、ＨＭＤＳ処理前の接触角が２１．７°であったのに対して、ＨＭＤＳ処理後の接触角は９６．８°であった。 Further, before the self-assembled monolayer 8 by the HMDS process is formed on the gate insulating film 3 and after the self-assembled monolayer 8 by the HMDS process is formed on the one surface side of the substrate 1. When the contact angle of pure water with respect to the outermost surface was measured, the contact angle before HMDS treatment was 21.7 °, whereas the contact angle after HMDS treatment was 96.8 °.
要するに、自己組織化単分子膜８を形成することにより、有機ナノ構造体６の下地表面の接触角が大きくなっており（つまり、撥水性が高くなっており）、表面エネルギーが小さくなっていることが分かる。 In short, by forming the self-assembled monolayer 8, the contact angle of the base surface of the organic nanostructure 6 is increased (that is, the water repellency is increased), and the surface energy is decreased. I understand that.
また、有機半導体層７は、例えば、物理的気相輸送法（Physical Vapor Transport Method：ＰＶＴ法）、蒸着法、塗布法などにより形成すればよい。 The organic semiconductor layer 7 may be formed by, for example, a physical vapor transport method (PVT method), a vapor deposition method, a coating method, or the like.
ここにおいて、例えば、ＰＶＴ法により、有機半導体層７を形成する場合の条件の一例を挙げれば、有機半導体層７の形成前にＨＭＤＳ処理を行うことで形成した自己組織化単分子膜８の表面にα−６Ｔからなる有機ナノ構造体６を真空蒸着法により蒸着膜厚を２ｎｍとして形成し、その後、ＰＶＴ法で、キャリアガスとしてＡｒガス、有機半導体材料からなる原料としてα−６Ｔを用い、成長炉内において上流側に配置される原料の温度を２３５℃、成長炉内において下流側に配置される基板１の温度を２２０℃、成長時間を１１時間とすればよい。なお、この条件より形成された有機半導体層７を構成する有機半導体薄膜は、自己組織化単分子膜８を形成していない場合に比べて結晶性が向上しており、一般的な有機トランジスタのチャネル長に基づいて形成する平面サイズであれば、単結晶とみなすことができる。 Here, for example, if an example of conditions for forming the organic semiconductor layer 7 by the PVT method is given, the surface of the self-assembled monolayer 8 formed by performing HMDS treatment before the formation of the organic semiconductor layer 7 An organic nanostructure 6 composed of α-6T is formed by vacuum deposition with a deposition film thickness of 2 nm, and then, by PVT method, Ar gas is used as a carrier gas, and α-6T is used as a raw material composed of an organic semiconductor material, The temperature of the raw material disposed upstream in the growth furnace may be 235 ° C., the temperature of the substrate 1 disposed downstream in the growth furnace may be 220 ° C., and the growth time may be 11 hours. Note that the organic semiconductor thin film constituting the organic semiconductor layer 7 formed under these conditions has improved crystallinity as compared with the case where the self-assembled monomolecular film 8 is not formed. Any planar size formed based on the channel length can be regarded as a single crystal.
以上説明した本実施形態の有機トランジスタによれば、製造時にゲート絶縁膜３上に形成する自己組織化単分子膜８により各有機ナノ構造体６の下地表面の表面エネルギーを制御することができ、図９に示す比較例のようにゲート絶縁膜３上に各有機ナノ構造体６を形成する場合に比べて、有機ナノ構造体６のアスペクト比を大きくすることが可能となって、有機半導体層７の結晶性も向上可能となる。 According to the organic transistor of the present embodiment described above, the surface energy of the underlying surface of each organic nanostructure 6 can be controlled by the self-assembled monomolecular film 8 formed on the gate insulating film 3 during manufacturing, Compared with the case where each organic nanostructure 6 is formed on the gate insulating film 3 as in the comparative example shown in FIG. 9, the aspect ratio of the organic nanostructure 6 can be increased, and the organic semiconductor layer The crystallinity of 7 can also be improved.
なお、本実施形態では、有機半導体層７がソース電極４とドレイン電極５との間の領域だけでなくソース電極４およびドレイン電極５を覆うように形成されているが、有機半導体層７は、少なくともソース電極４とドレイン電極５との間に形成されていればよい。また、有機ナノ構造体６は、ゲート絶縁膜３の上記表面側（ここでは、自己組織化単分子膜８上）において少なくともソース電極４とドレイン電極５との間の領域に形成されていればよく、ソース電極４およびドレイン電極５に重なる領域には形成してもしなくてもどちらでもよい。 In the present embodiment, the organic semiconductor layer 7 is formed so as to cover not only the region between the source electrode 4 and the drain electrode 5 but also the source electrode 4 and the drain electrode 5. What is necessary is just to be formed between the source electrode 4 and the drain electrode 5 at least. Further, the organic nanostructure 6 may be formed at least in a region between the source electrode 4 and the drain electrode 5 on the surface side of the gate insulating film 3 (here, on the self-assembled monolayer 8). It does not matter whether the source electrode 4 and the drain electrode 5 overlap with each other.
（実施形態２）
本実施形態の有機トランジスタは、トップコンタクト型の有機トランジスタであって、図１０に示すように、基板１の一表面上にゲート電極２が形成されるとともに、ゲート電極２を覆うようにゲート絶縁膜３が形成されており、ゲート絶縁膜３上に自己組織化単分子膜８が形成され、自己組織化単分子膜８上に多数のナノサイズの有機ナノ構造体６が互いに離間して形成されており、自己組織化単分子膜８の表面および各有機ナノ構造体６を覆うように有機半導体層７が形成され、有機半導体層７上においてソース電極４とドレイン電極５とが離間して形成されている。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 2)
The organic transistor of the present embodiment is a top contact type organic transistor, and as shown in FIG. 10, a gate electrode 2 is formed on one surface of the substrate 1 and gate insulation is provided so as to cover the gate electrode 2. A film 3 is formed, a self-assembled monolayer 8 is formed on the gate insulating film 3, and a large number of nano-sized organic nanostructures 6 are formed on the self-assembled monolayer 8 so as to be separated from each other. The organic semiconductor layer 7 is formed so as to cover the surface of the self-assembled monolayer 8 and each organic nanostructure 6, and the source electrode 4 and the drain electrode 5 are separated from each other on the organic semiconductor layer 7. Is formed. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.
有機半導体層７は、ソース電極４とドレイン電極５との間の領域で当該有機半導体層７の下地表面（本実施形態では、自己組織化単分子膜８の上記表面）に形成した多数の有機ナノ構造体６を核として形成された有機半導体薄膜により構成されている。 The organic semiconductor layer 7 has a large number of organic layers formed on the underlying surface of the organic semiconductor layer 7 (in the present embodiment, the surface of the self-assembled monolayer 8) in a region between the source electrode 4 and the drain electrode 5. It is composed of an organic semiconductor thin film formed with the nanostructure 6 as a nucleus.
以上説明した本実施形態の有機トランジスタによれば、製造時にゲート絶縁膜３上に形成する自己組織化単分子膜８により各有機ナノ構造体６の下地表面の表面エネルギーを制御することができ、図１１に示す比較例のようにゲート絶縁膜３上に各有機ナノ構造体６を形成する場合に比べて、有機ナノ構造体６のアスペクト比を大きくすることが可能となって、有機半導体単結晶薄膜からなる有機半導体層７を形成することが可能となり、有機半導体層７の結晶性を向上可能となる。 According to the organic transistor of the present embodiment described above, the surface energy of the underlying surface of each organic nanostructure 6 can be controlled by the self-assembled monomolecular film 8 formed on the gate insulating film 3 during manufacturing, Compared to the case where each organic nanostructure 6 is formed on the gate insulating film 3 as in the comparative example shown in FIG. 11, the aspect ratio of the organic nanostructure 6 can be increased, and the organic semiconductor unit It becomes possible to form the organic semiconductor layer 7 made of a crystalline thin film, and the crystallinity of the organic semiconductor layer 7 can be improved.
１ 基板
２ ゲート電極
３ ゲート絶縁膜
４ ソース電極
５ ドレイン電極
６ 有機ナノ構造体
７ 有機半導体層
８ 自己組織化単分子膜
DESCRIPTION OF SYMBOLS 1 Substrate 2 Gate electrode 3 Gate insulating film 4 Source electrode 5 Drain electrode 6 Organic nanostructure 7 Organic semiconductor layer 8 Self-assembled monolayer
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