JP5408818B1 - Gas barrier structure and method for forming gas barrier structure - Google Patents

Abstract

Provided are a gas barrier structure provided with a gas barrier layer that has excellent gas barrier properties and transparency, and has excellent adhesion and crack resistance, and an efficient method for forming such a gas barrier structure.
A gas barrier structure comprising a gas barrier layer on a substrate, and a method for forming such a gas barrier structure, wherein the gas barrier layer comprises a polysilazane compound, a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or any one of them. It is derived from a gas barrier layer forming material comprising a polar polymer, and the gas barrier layer forming material is subjected to plasma ion implantation.

Description

  The present invention relates to a gas barrier structure and a method for producing the gas barrier structure, and in particular, a gas barrier structure including a gas barrier layer derived from a gas barrier layer forming material containing a predetermined polar polymer and a polysilazane compound, and a gas barrier structure The present invention relates to a body forming method.

Conventionally, a polymer molded body such as a plastic film is inexpensive and excellent in workability, and thus has a desired function and is used in various fields.
For example, a gas barrier plastic film that prevents the permeation of water vapor and oxygen is used for food and pharmaceutical packaging films to maintain the taste and freshness by suppressing the oxidation and alteration of proteins and fats and oils.

In recent years, in an image display device using a liquid crystal device or an organic electroluminescence device (organic EL element), a glass plate is used as a substrate for electrode formation in order to realize a reduction in thickness, weight, and flexibility. Therefore, the use of a transparent plastic film such as a polyester film has been studied.
However, a transparent plastic film such as a polyester film is likely to transmit water vapor, oxygen, etc., and as a result, there is a problem that it tends to cause performance deterioration and electrode corrosion of various elements provided in the image display device. It was.

Therefore, a flexible display substrate in which a transparent gas barrier layer made of a metal oxide is laminated on a transparent plastic film has been proposed for the purpose of suppressing permeation of water vapor, oxygen, and the like (see, for example, Patent Document 1).
More specifically, a first step of laminating a gas barrier layer made of a metal oxide on the surface of a transparent plastic film, a second step of laminating a transparent protective layer on the formed gas barrier layer, and a transparent on the transparent protective layer A method of manufacturing a flexible display substrate including a third step of further laminating a conductive layer, wherein the first step, the second step, and the third step are the same in order to suppress changes in each layer after the lamination. It is characterized by being performed in a vacuum apparatus.

  Also disclosed is a method for producing a gas barrier film, wherein a polysilazane film made of a polysilazane compound is formed on at least one surface of a plastic film, and the polysilazane film is subjected to plasma treatment to form a gas barrier film. (For example, refer to Patent Document 2).

Furthermore, a coating composition obtained by mixing an acrylic resin with a polysilazane compound has been proposed in order to improve adhesion to a substrate, flexibility, and the like (see, for example, Patent Document 3).
More specifically, a coating composition obtained by dissolving a polysilazane having a predetermined structure having a number average molecular weight of 100 to 50,000 and an acrylic resin, using a halogenated hydrocarbon or the like as a solvent. It is.

JP 2000-338901 A JP 2007-237588 A Japanese Patent Laid-Open No. 7-292321

  However, according to the method for manufacturing a flexible display substrate disclosed in Patent Document 1, in the first step, the surface of the transparent plastic film is made of only a metal oxide by vapor deposition, ion plating, sputtering, or the like. Since the gas barrier layer is laminated, the flexibility is inferior. For example, when the obtained flexible display substrate is rounded or bent, there is a problem that the gas barrier layer cracks and the gas barrier property is remarkably lowered. It was.

  Moreover, although the manufacturing method of the gas barrier film disclosed by patent document 2 performs plasma treatment after forming a polysilazane film | membrane with respect to a film, and uses it as a gas barrier film, gas barrier property is still inadequate. Moreover, the problem that flexibility was also inferior was seen.

Furthermore, since the coating composition disclosed in Patent Document 3 is only dried after being applied and not subjected to plasma ion implantation treatment, there is a problem that the gas barrier property is insufficient. It was.
That is, a gas barrier film or a flexible display substrate having a conventional gas barrier layer is not flexible when it is repeatedly bent. Therefore, there is a problem that the gas barrier layer is easily cracked and the gas barrier property is lowered.

Accordingly, as a result of intensive studies on such problems, the present inventors have determined that the gas barrier layer has been subjected to plasma ion implantation treatment for the gas barrier layer forming material containing a predetermined polar polymer and a polysilazane compound. The present inventors have found the fact that the flexibility is improved and the gas barrier property is excellent, and the present invention has been completed.
That is, an object of the present invention is to provide a gas barrier structure including a gas barrier layer having excellent flexibility, and an efficient method for forming such a gas barrier structure.

According to the present invention, a gas barrier structure comprising a gas barrier layer on a substrate, wherein the gas barrier layer comprises a polysilazane compound, a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or one of the polar polymers. A layer made of a gas barrier layer forming material (hereinafter sometimes referred to as a pre-barrier layer) is subjected to plasma ion implantation treatment, and the hydroxyl group-containing polymer is polyvinyl alcohol, polyvinyl formal, polyvinyl butyral, and ethylene- and at least one selected from the group consisting of vinyl alcohol copolymers, carboxyl group-containing polymer is an ethylene - (meth) What acrylate copolymer der, the total amount of the gas barrier layer forming material to Te, characterized in that the amount of polar polymer within a range of 10 to 50 wt% The gas barrier structure is provided that can solve the problems described above.
That is, because the gas barrier layer is formed by performing plasma ion implantation on the layer made of the gas barrier layer forming material containing a predetermined polar polymer and polysilazane compound laminated on the base material, The flexibility and the coating strength are increased, and as a result, the crack resistance can be improved and the generation of scratches in the production process can be effectively prevented.
Further, by using such a hydroxyl group-containing polymer or carboxyl group-containing polymer, the compatibility with the polysilazane compound is improved, and the flexibility and the film strength are increased respectively. It is possible to effectively prevent the generation of scratches in the production process.
In addition, the blending amount of such a polar polymer improves the compatibility with the polysilazane compound, improves the handling and stability of the gas barrier layer forming material, and further improves the flexibility and coating. Strength can be obtained.

In constituting the gas barrier structure of the present invention, the gas barrier layer includes a surface layer containing at least silicon, oxygen, and nitrogen having a film thickness of 10 to 30 nm, and these elements measured by XPS in the surface layer are included. The silicon content is a value within the range of 25 to 45 mol%, the oxygen content is within the range of 5 to 74 mol%, and the nitrogen content is within the range of 0.1 to 15 mol% with respect to the total amount. Is preferred.
Thus, by making it the gas barrier layer containing the surface layer of a predetermined composition, the further outstanding gas barrier property is obtained.

Furthermore , in constituting the gas barrier structure of the present invention, it is preferable to set the elastic modulus in the gas barrier layer (surface layer) to a value in the range of 1 to 2.5 GPa.
By using a gas barrier layer having such an elastic modulus, excellent flexibility and coating strength can be obtained.

Another invention of the present invention is a method for forming a gas barrier structure comprising a gas barrier layer on a substrate, which comprises the following steps (1) to (2): It is the formation method.
(1) A polysilazane compound, a hydroxyl group-containing polymer and an ethylene- (meth) acrylic acid copolymer which are at least one selected from the group consisting of polyvinyl alcohol, polyvinyl formal, polyvinyl butyral, and ethylene-vinyl alcohol copolymer A gas barrier layer containing a carboxyl group-containing polymer or any one polar polymer with a blending amount of the polar polymer within a range of 10 to 50% by weight with respect to the total amount of the gas barrier layer forming material. Step of laminating a layer made of a forming material on a substrate (2) Ion implantation step of plasma ion implantation into a layer made of a material for forming a gas barrier layer to form a gas barrier layer In other words, in step (1) A layer comprising a gas barrier layer forming material comprising a polar polymer and a polysilazane compound By laminating on the base material, in step (2), a layer made of a gas barrier layer forming material containing a predetermined polar polymer and polysilazane compound is subjected to plasma ion implantation treatment to form a gas barrier layer. Thus, it is possible to obtain a gas barrier structure provided with a gas barrier layer having increased flexibility and coating strength, and thus excellent crack resistance and less scratches in the production process.

FIG. 1 is a schematic view for explaining a cross section of a gas barrier structure of the present invention. 2 (a) to 2 (e) are views for explaining the method for manufacturing the gas barrier structure of the present invention. FIG. 3 is a diagram provided for explaining an example of an ion implantation apparatus.

[First embodiment]
The first embodiment is a gas barrier structure including a gas barrier layer on a substrate, and the gas barrier layer includes a polysilazane compound, a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or any one polar polymer, A layer made of a gas barrier layer-forming material comprising plasma ion implantation treatment, and the hydroxyl group-containing polymer is selected from the group consisting of polyvinyl alcohol, polyvinyl formal, polyvinyl butyral, and ethylene-vinyl alcohol copolymer. and at least one that, carboxyl group-containing polymer is an ethylene - 10-50 (meth) What acrylate copolymer der, with respect to the total amount of the gas barrier layer forming material, the amount of polar polymer A gas barrier structure having a value within the range of wt% .
An example of the gas barrier structure of the present invention is shown in FIG.
Here, the gas barrier structure 50 shown in FIG. 1 includes the base material 12 and the gas barrier layer 10 on the base material 12.
Hereinafter, the gas barrier structure of the first embodiment will be specifically described with reference to the drawings as appropriate.

1. Base material The kind of base material is not particularly limited as long as it has flexibility, and examples thereof include a plastic resin film, a plastic resin plate, and a glass substrate (including a ceramic substrate).
Resins used for plastic resin films or brass resin plates include polyimide, polyamide, polyamideimide, polyphenylene ether, polyether ketone, polyether ether ketone, polyolefin, polyester, polycarbonate, polysulfone, polyether sulfone, polyphenylene sulfide, Examples include polyarylate, acrylic resin, cycloolefin polymer, and aromatic polymer.
Examples of the polyester include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, and polyarylate.
Examples of cycloolefin polymers include norbornene polymers, monocyclic olefin polymers, cyclic conjugated diene polymers, vinyl alicyclic hydrocarbon polymers, and hydrides thereof.
Although the thickness of a base material should just be determined according to a use purpose etc., it is preferable that it is 1-1000 micrometers from the point that a softness | flexibility and handling are easy, and it is more preferable that it is 5-100 micrometers.

2. Gas barrier layer The gas barrier layer in the gas barrier structure of the present invention is derived from a layer made of a material for forming a gas barrier layer comprising a polysilazane compound and a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or one of the polar polymers. The layer made of the gas barrier layer forming material is obtained by plasma ion implantation.
The gas barrier layer is a layer having a characteristic of suppressing permeation of oxygen, water vapor, or the like (hereinafter referred to as “gas barrier property”).

(1) Gas Barrier Layer Forming Material Polysilazane Compound The polysilazane compound constituting part of the gas barrier layer forming material is a compound having a repeating unit containing a —Si—N— bond (silazane bond) in the molecule. It is a compound which has a repeating unit represented by Formula (1). Specific examples include organic polysilazane, inorganic polysilazane, and modified polysilazane.
Hereinafter, a suitable polysilazane compound will be described more specifically.
However, among various polysilazane compounds, it is particularly preferable to use inorganic polysilazane in which Rx, Ry, and Rz are all hydrogen atoms.
The reason for this is that such an inorganic polysilazane (perhydropolysilazane) does not react excessively with the polar polymer even when mixed with a predetermined polar polymer described later, and the gas barrier layer is formed by plasma ion implantation. This is because it is possible to obtain a gas barrier structure having further excellent gas barrier characteristics and flexibility.
The number average molecular weight of the polysilazane compound to be used is not particularly limited, but is preferably a value within the range of 100 to 50,000.

(In the general formula (1), Rx, Ry and Rz each independently represent a hydrogen atom, an unsubstituted or substituted alkyl group, an unsubstituted or substituted cycloalkyl group, an unsubstituted or substituted group. A non-hydrolyzable group such as an alkenyl group, an unsubstituted or substituted aryl group or an alkylsilyl group, and the subscript n represents an arbitrary natural number.)

Examples of the alkyl group of the above-described unsubstituted or substituted alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a t-butyl group. C1-C10 alkyl groups, such as a butyl group, n-pentyl group, isopentyl group, neopentyl group, n-hexyl group, n-heptyl group, n-octyl group, are mentioned.
Examples of the unsubstituted or substituted cycloalkyl group include cycloalkyl groups having 3 to 10 carbon atoms such as a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group.
Examples of the alkenyl group of the above-described unsubstituted or substituted alkenyl group include a vinyl group, 1-propenyl group, 2-propenyl group, 1-butenyl group, 2-butenyl group, and 3-butenyl group. Examples thereof include alkenyl groups having 2 to 10 carbon atoms.
In addition, examples of the substituent for the alkyl group, cycloalkyl group, and alkenyl group described above include halogen atoms such as fluorine atom, chlorine atom, bromine atom, and iodine atom; hydroxyl group; thiol group; epoxy group; glycidoxy group; ) Acryloyloxy group; unsubstituted or substituted aryl group such as phenyl group, 4-methylphenyl group, 4-chlorophenyl group and the like.
Moreover, as an aryl group which has the above-mentioned unsubstituted or substituted group, C6-C10 aryl groups, such as a phenyl group, 1-naphthyl group, 2-naphthyl group, are mentioned, for example.
In addition, examples of the substituent of the aryl group include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom; alkyl groups having 1 to 6 carbon atoms such as methyl group and ethyl group; methoxy group and ethoxy group Nitro group; cyano group; hydroxyl group; thiol group; epoxy group; glycidoxy group; (meth) acryloyloxy group; phenyl group, 4-methylphenyl group, 4-chlorophenyl group, etc. Examples thereof include an unsubstituted or substituted aryl group.
Examples of the alkylsilyl group described above include trimethylsilyl group, triethylsilyl group, triisopropylsilyl group, tri-t-butylsilyl group, methyldiethylsilyl group, dimethylsilyl group, diethylsilyl group, methylsilyl group, and ethylsilyl group. .
In addition, as Rx, Ry, and Rz, a hydrogen atom, a C1-C6 alkyl group, or a phenyl group is preferable, and a hydrogen atom is especially preferable.

(I) Inorganic polysilazane compound Moreover, in General formula (1), the inorganic polysilazane compound (perhydropolysilazane) whose Rx, Ry, and Rz are all hydrogen atoms is preferable.
Examples of the inorganic polysilazane compound include compounds including structures represented by the following general formulas (2) to (3) and formula (4).

That is, it has a linear structure having a repeating unit represented by the following general formula (2) and a number average molecular weight having ₃ to 10 SiH ₃ groups in one molecule is in a range of 690 to 2000. One perhydropolysilazane (Japanese Patent Publication No. 63-16325) can be mentioned.

(In the general formula (2), the subscript b represents an arbitrary natural number.)

  Moreover, the perhydropolysilazane which has a linear structure and a branched structure which have a repeating unit represented by following General formula (3) is mentioned.

(In general formula (3), Y ¹ is a hydrogen atom or a group represented by the following general formula (3 ′), and subscripts c and d each represent an arbitrary natural number.)

(In General Formula (3 ′), Y ² is a hydrogen atom or a group represented by General Formula (3 ′), subscript e represents an arbitrary natural number, and * represents a bonding position.)

  Furthermore, for example, perhydropolysilazane having a perhydropolysilazane structure represented by the following formula (4) and having a linear structure, a branched structure and a cyclic structure in the molecule can be mentioned.

(Ii) Organic polysilazane compound An organic polysilazane compound in which at least one of Rx, Ry, and Rz in the general formula (1) is not a hydrogen atom but an organic group is also suitable.
Examples of the organic polysilazane compound include compounds having structures represented by the following general formulas (5) to (9).

  That is, a compound having a cyclic structure having a degree of polymerization of 3 to 5 mainly using a structure represented by the following general formula (5) as a repeating unit.

(In general formula (5), Rx ′ has an unsubstituted or substituted alkyl group, an unsubstituted or substituted cycloalkyl group, an unsubstituted or substituted alkenyl group, an unsubstituted or substituted group. This represents an aryl group or an alkylsilyl group, and the same applies to the following general formulas.)

  Moreover, the compound which has a cyclic structure with a degree of polymerization of 3-5 mainly using the structure represented by following General formula (6) as a repeating unit is mentioned.

(In general formula (6), Rz ′ represents an unsubstituted or substituted alkyl group, an unsubstituted or substituted cycloalkyl group, or an alkylsilyl group.)

  Moreover, the compound which has a cyclic structure with a polymerization degree of 3-5 mainly using the structure represented by the following general formula (7) as a repeating unit is mentioned.

(In General Formula (7), Ry ′ has an unsubstituted or substituted alkyl group, an unsubstituted or substituted cycloalkyl group, an unsubstituted or substituted alkenyl group, an unsubstituted or substituted group. An aryl group or an alkylsilyl group.)

  Moreover, the polyorgano (hydro) silazane compound which has a structure represented by following formula (8) in a molecule | numerator is mentioned.

  Furthermore, the polysilazane compound which has a repeating structure represented by following General formula (9) is mentioned.

(In the general formula (9), Y ³ is a hydrogen atom or a group represented by the following general formula (9 ′), and the subscripts f and g represent arbitrary natural numbers.)

(In general formula (9 ′), Y ⁴ represents a hydrogen atom or a group represented by general formula (9 ′), subscript h represents an arbitrary natural number, and * represents a bonding position.)

In addition, the organic polysilazane compound mentioned above can be manufactured by a well-known method.
For example, it can be obtained by reacting ammonia or a primary amine with the reaction product of an unsubstituted or substituted halogenosilane compound represented by the following general formula (10) and a secondary amine.
In addition, the secondary amine, ammonia, and primary amine to be used can be suitably selected according to the structure of the target polysilazane compound.

(In the general formula (10), X represents a halogen atom, R ¹ is a substituent of any one of Rx, Ry, Rz, Rx ′, Ry ′ and Rz ′ described above, and m is 1 Represents a natural number of ~ 3)

(Iii) Modified polysilazane In the present invention, it is also preferable to use a modified polysilazane as the polysilazane compound.
Examples of such a modified polysilazane include a polymetallosilazane containing a metal atom (the metal atom may be cross-linked), and repeating units of [(SiH ₂ ) _i (NH) _j )] and [(SiH ₂ ) _K O] (subscripts i, j and k are each independently 1, 2 or 3). Polyborosilazane, polysilazane and metal produced by reacting a boron compound with polysiloxazan or polysilazane represented by Polymetallosilazane produced by reacting with alkoxide, inorganic silazane high polymer, modified polysilazane, copolymerized silazane in which organic components are introduced into polysilazane, and a catalytic compound for promoting ceramicization are added to or added to polysilazane. Low temperature ceramicized polysilazane, silicon alkoxide addition polysilazane, glycidol addition Rishirazan, acetylacetonato complexes addition polysilazane include metal carboxylate added polysilazane.
In addition, a polysilazane composition obtained by adding amines and / or acids to the above-described polysilazane compound or a modified product thereof, obtained by adding alcohol such as methanol or hexamethyldisilazane to a terminal N atom to perhydropolysilazane. Compounds and the like.

(2) Gas barrier layer-forming material polar polymer Further, as the polar polymer constituting a part of the gas barrier layer-forming material, a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or one of them is used.
That is, the combination of the polysilazane compound and the polar polymer described above is because the obtained gas barrier layer can be made to be a gas barrier layer with improved flexibility and coating strength and excellent barrier properties.
Therefore, as the hydroxyl group-containing polymer or carboxyl group-containing polymer, various polymers having a hydroxyl group and / or a carboxyl group, that is, an acrylate ester copolymer, an ethylene-acrylate ester copolymer, a polyester resin, and polyvinyl alcohol (PVA), polyvinyl acetal resins (PVAc) such as polyvinyl formal and polyvinyl butyral, ethylene-vinyl alcohol copolymer (EVOH), vinyl alcohol- (N-vinylformamide) copolymer, vinyl alcohol-vinyl acetate One kind of a copolymer, an ethylene-acrylic acid copolymer, an ethylene-methacrylic acid copolymer, or a combination of two or more kinds may be mentioned.
Hereinafter, it will be described in more detail by roughly classifying into hydroxyl group-containing polymers and carboxyl group-containing polymers.

(I) Hydroxyl group-containing polymer The hydroxyl group-containing polymer used in the present invention has a hydroxyl group in the molecule and has good compatibility with a silazane compound . That is, examples of the hydroxyl group-containing polymer include polyvinyl alcohol and polyvinyl formal. , Polyvinyl butyral, and at least one selected from the group consisting of ethylene-vinyl alcohol copolymers.
The reason for this is that by using such a hydroxyl group-containing polymer, compatibility with the polysilazane compound is improved, and further excellent gas barrier properties can be obtained.

When these hydroxyl group-containing polymers are polyvinyl alcohol, the degree of saponification (an index indicating the degree of hydrolysis of acetates and the like present in the polar polymer) is preferably in the range of 10 to 60%.
This is because when the degree of saponification of polyvinyl alcohol is less than 10%, the improvement in the flexibility and crack resistance of the gas barrier layer may be insufficient even when a predetermined amount is blended. .
On the other hand, when the saponification degree of polyvinyl alcohol exceeds 60%, the compatibility with the polysilazane compound and the stability of the material for forming the gas barrier layer are lowered, and it may be difficult to form a uniform gas barrier layer. Because there is.
Therefore, the saponification degree of polyvinyl alcohol is preferably in the range of 10 to 60%, more preferably in the range of 20 to 50%, and still more preferably in the range of 30 to 40%.

(Ii) Carboxyl group-containing polymer The carboxyl group-containing polymer used in the present invention has a carboxyl group in the molecule and has good compatibility with the silazane compound, and is an ethylene- (meth) acrylic acid copolymer. It is characterized by being. And thus, compatibility with the polysilazane compound becomes good, it is possible to obtain more excellent gas barrier properties.

Moreover, it is preferable to make the weight average molecular weight of these polar polymers into the value within the range of 1,000-500,000.
The reason for this is that when the weight average molecular weight of the polar polymer is less than 1,000, even if a predetermined amount is blended, the improvement in flexibility and crack resistance in the gas barrier layer may be insufficient. Because.
On the other hand, when the weight average molecular weight of the polar polymer exceeds 500,000, the compatibility with the polysilazane compound and the stability of the gas barrier layer forming material are lowered, and it is difficult to form a uniform gas barrier layer. This is because there may be cases.
Therefore, the weight average molecular weight of the polar polymer is more preferably set to a value within the range of 10,000 to 150,000, and further preferably set to a value within the range of 50,000 to 100,000.

  In addition, for these polar polymers, acrylic polymer, urethane polymer, silicone polymer, vinyl acetate polymer, vinyl chloride polymer, epoxy polymer, acrylic, as long as the gas barrier properties, transparency, crack resistance, etc. of the gas barrier layer are not excessively impaired. It is also preferable to blend a predetermined amount of at least one of polymers and oligomers such as oligomers, urethane oligomers, silicone oligomers, vinyl acetate oligomers, vinyl chloride oligomers and epoxy oligomers.

The blending amount of the polar polymer is not particularly limited, but the blending amount of the polar polymer is within the range of 10 to 50% by weight with respect to the total amount of the gas barrier layer forming material comprising the polysilazane compound and the polar polymer. It is preferable that
The reason for this is that by using such a polar polymer, the compatibility with the polysilazane compound is improved, the handling is improved, and the reactivity with the polysilazane compound is further improved, resulting in an excellent gas barrier. This is because it is possible to obtain a gas barrier layer having the properties of both flexibility and film strength.
More specifically, if the amount of the polar polymer is less than 1% by weight, flexibility may not be obtained.
On the other hand, when the blending amount of the polar polymer exceeds 50% by weight, the gas barrier property and film strength of the obtained gas barrier layer may be lowered.
Accordingly, the blending amount of the polar polymer is preferably set to a value within the range of 10 to 50% by weight and preferably set to a value within the range of 10 to 45% by weight with respect to the total amount of the gas barrier layer forming material. More preferably, the value is more preferably in the range of 15 to 40% by weight.

(3) Film thickness Moreover, it is preferable to make the film thickness of a gas barrier layer into the value within the range of 50-10000 nm.
The reason for this is that by using the gas barrier layer having such a predetermined thickness, further excellent gas barrier properties and adhesion can be obtained, and at the same time, both flexibility and coating strength can be achieved.
Therefore, the thickness of the gas barrier layer is more preferably set to a value within the range of 70 to 2000 nm, and further preferably set to a value within the range of 100 to 500 nm.
Yes.
Moreover, it is preferable that the gas barrier layer of this invention has the surface layer mentioned later on the surface.
And when a surface layer is formed in the surface of a gas barrier layer, it is preferable to make the film thickness of the surface layer into the value within the range of 10-30 nm.
This is because, by using a gas barrier layer including a surface layer having such a predetermined thickness, a further excellent gas barrier property can be obtained and an excellent transparency can be obtained.
Therefore, the thickness of the surface layer of the gas barrier layer is more preferably set to a value within the range of 13 to 25 nm, and further preferably set to a value within the range of 15 to 20 nm.
The film thickness of the gas barrier layer and the thickness of the predetermined surface layer can be measured with an electron microscope.

(4) Elastic modulus Moreover, it is preferable to make the elastic modulus in a gas barrier layer into the value within the range of 1.0-2.5 GPa.
That is, in the present invention, as the surface layer of the gas barrier layer, the elastic modulus at a depth position of 10 to 30 nm from the surface of the gas barrier layer on the opposite side of the substrate on which the gas barrier layer is provided (for convenience, this elastic modulus is the elasticity of the gas barrier layer). (Referred to as a rate) is preferably set to a value in the range of 1.0 to 2.5 GPa.
This is because excellent flexibility and film strength can be obtained by using a gas barrier layer having such an elastic modulus.
On the other hand, if the elastic modulus of the gas barrier layer is larger than 2.5 GPa, the gas barrier layer may be cracked when bent, and the gas barrier property may be remarkably lowered.
On the other hand, if the elastic modulus of the gas barrier layer is less than 1.0 GPa, the coating strength is lowered and the film is easily damaged, which is not preferable.
Therefore, the elastic modulus of the gas barrier layer is preferably set to a value in the range of 1.0 to 2.5 GPa, more preferably set to a value in the range of 1.0 to 2.4 GPa. More preferably, the value is within the range of 0 GPa.
In addition, about the elasticity modulus of a gas barrier layer (surface layer), it can measure on the conditions shown in Example 1 in the form containing a base material (PET film etc.) for convenience.

(5) Surface Layer Further, as shown in FIG. 1, the gas barrier layer 10 includes a surface layer 11 containing at least silicon, oxygen, and nitrogen, and the total amount of these elements measured by XPS in the surface layer. , A silicon amount within a range of 15-30 mol%, an oxygen amount within a range of 45-70 mol%, a carbon amount within a range of 5-30 mol%, and a nitrogen amount of 1.5-4. A value within the range of 0 mol% is preferred.
The reason for this is that, by using a gas barrier layer including a surface layer having a predetermined composition in this way, a further excellent gas barrier property can be obtained and a good transparency can be obtained.
The surface layer 11 of the gas barrier layer 10 means a region in the range of about 10 to 30 nm from the surface, but typically the amount of elements at a depth of about 10 nm from the surface can be a problem.
Therefore, for example, a value obtained by measuring the element amount at a depth position of 10 nm from the surface of the gas barrier layer 10 on the side opposite to the base material by XPS can be calculated as the elemental composition ratio in the surface layer of the gas barrier layer 10.
And it becomes easy to produce | generate such a surface layer by using a polysilazane compound for the gas barrier layer forming material.

(6) Plasma Ion Implantation Treatment The gas barrier layer of the present invention is a layer made of a material for forming a gas barrier layer comprising the aforementioned polysilazane compound and a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or one of the polar polymers. It is obtained by plasma ion implantation.
By performing the plasma ion implantation treatment, the polysilazane in the gas barrier layer forming material is converted into a ceramic, and excellent gas barrier properties are exhibited.
The plasma ion implantation process will be described in detail in a second embodiment described later.

3. Gas barrier structure (1) Water vapor transmission rate (WVTR)
Moreover, it is preferable that the water vapor transmission rate of the gas barrier structure in an atmosphere of 40 ° C. and relative humidity 90% is set to a value of 0.3 g / (m ² · day) or less.
The reason for this is that an excellent gas barrier property can be obtained quantitatively by setting such a value of water vapor permeability.
However, when the value of the water vapor transmission rate of the gas barrier structure is excessively low, usable materials are excessively limited, and the manufacturing yield is remarkably reduced.
Therefore, it is more preferably set to a value within the range of the gas barrier structure the value of the water vapor transmission rate of the body ^{0.001~0.3g / (m 2 · day)} , 0.01~0.2g / (m 2 · day) is more preferable.
The water vapor transmission rate of the gas barrier structure can be measured by a known method, for example, the method shown in Example 1.

(2) Other layers The gas barrier structure of the present invention may contain other layers. The other layer may be a single layer or a plurality of layers. The other layers may be formed on both sides of the gas barrier structure, or may be formed on one side of the gas barrier layer side or the substrate side.

(I) Inorganic compound layer Although an inorganic compound layer is a layer which consists of a 1 type, or 2 or more types of combination of an inorganic compound, it is preferable to attach this inorganic compound layer with a gas barrier layer.
Here, as the inorganic compound constituting the inorganic compound layer, those that can be generally formed in a vacuum and have a gas barrier property, such as inorganic oxides, inorganic nitrides, inorganic carbides, inorganic sulfides, and composites thereof, can be used. Some inorganic oxynitrides, inorganic oxycarbides, inorganic nitriding carbides, inorganic oxynitriding carbides, and the like can be given.

(Ii) Shock Absorbing Layer The shock absorbing layer is for preventing the occurrence of cracking when an impact is applied to the molded body, and it is preferable that such a shock absorbing layer is provided along with the gas barrier layer.
Here, the material for forming the shock absorbing layer is not particularly limited, and for example, acrylic resins, urethane resins, silicone resins, olefin resins, rubber materials, and the like can be used.

(Iii) Conductor layer In addition, the conductor layer is a layer for imparting conductivity of 1 to 1000 Ω / □ or antistatic property to the gas barrier layer, usually as surface resistance. The body layer is preferably provided together with the gas barrier layer.
Here, examples of the material constituting the conductor layer include metals, alloys, metal oxides, electrically conductive compounds, and mixtures thereof. More specifically, antimony-doped tin oxide (ATO); fluorine-doped tin oxide (FTO); tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO), etc. Conductive metal oxides; metals such as gold, silver, chromium and nickel; mixtures of these metals and conductive metal oxides; inorganic conductive materials such as copper iodide and copper sulfide; organics such as polyaniline, polythiophene and polypyrrole Examples thereof include conductive materials.

(Iv) Primer layer The primer layer plays a role of improving interlayer adhesion between the surface of the substrate and the gas barrier layer. That is, by providing such a primer layer, a gas barrier layer that is extremely excellent in interlayer adhesion and surface smoothness can be obtained.
Here, it does not specifically limit as a material which comprises a primer layer, A well-known thing can be used. For example, a photopolymerizable composition comprising a silicon-containing compound, a photopolymerizable compound comprising a photopolymerizable monomer and / or a photopolymerizable prepolymer, and a polymerization initiator that generates radicals at least in the visible light region, a polyester resin , Polyurethane resins (particularly polyacrylic polyols, polyester polyols, polyether polyols and isocyanate compounds) and acrylic resins, polycarbonate resins, vinyl chloride / vinyl acetate copolymers, polyvinyl butyral resins And resins such as nitrocellulose resins, alkyl titanates, and ethyleneimines. These materials can be used alone or in combination of two or more.
In addition, you may ion-implant into the obtained primer layer by the method similar to the method of implanting ion to the ion implantation layer mentioned later. This is because a better gas barrier structure can be obtained by performing ion implantation also on the primer layer.

  Since the gas barrier structure of the present invention is excellent in flexibility, coating strength, etc., flexible electronic devices such as liquid crystal displays, EL displays, display members such as electronic paper, solar cell backsheets, solar cell bronze sheets, etc. It can be suitably used as a member for use.

[Second Embodiment]
2nd Embodiment is a formation method of the gas barrier structure provided with the gas barrier layer which consists of a gas barrier layer forming material on a base material, Comprising: The following process (1)-(2) is included, It is characterized by the above-mentioned. This is a method for forming a gas barrier structure.
(1) A polysilazane compound, a hydroxyl group-containing polymer and an ethylene- (meth) acrylic acid copolymer which are at least one selected from the group consisting of polyvinyl alcohol, polyvinyl formal, polyvinyl butyral, and ethylene-vinyl alcohol copolymer A gas barrier layer containing a carboxyl group-containing polymer or any one polar polymer with a blending amount of the polar polymer within a range of 10 to 50% by weight with respect to the total amount of the gas barrier layer forming material. Laminating step of laminating a layer made of a forming material on a base material (2) Ion implantation step of plasma ion implantation into a layer made of a material for forming a gas barrier layer to form a gas barrier layer

1. Step (1): Laminating Step In step (1), as shown in FIG. 2 (a), a base material 12 for which gas barrier properties are desired is prepared, and as shown in FIG. 2 (b), a gas barrier layer forming material. This is a step of forming a layer 10a made of
Here, the method for forming the layer made of the gas barrier layer forming material is not particularly limited, and a known method can be used. For example, there is a method in which a coating liquid containing a polysilazane compound and at least one of polar polymers, optionally other components, and a solvent is applied on a substrate, and the resulting coating film is dried appropriately. Can be mentioned.
Examples of the method for applying the coating liquid include known coating methods such as screen printing, knife coating, roll coating, die coating, ink jet, and spin coating.
The obtained coating film is dried at 80 to 150 ° C. for several tens of seconds to several tens of minutes (FIG. 2C).
Further, the polysilazane compound, the polar polymer, and the substrate to be used can be the same as those described in the gas barrier structure.

In addition, although it is an optional step, it is preferable that the base material 12 on which the layer 10a made of the gas barrier layer forming material is formed is subjected to seasoning treatment under predetermined conditions.
Here, the seasoning treatment condition is preferably a treatment condition of a temperature of 15 to 35 ° C. and a treatment time of 24 to 480 hours, and more preferably a treatment condition of a temperature of 20 to 30 ° C. and a treatment time of 48 to 240 hours. preferable.
Thus, by performing the seasoning treatment, ceramicization of the polysilazane compound in the layer made of the gas barrier layer forming material proceeds, and excellent gas barrier properties can be obtained.

3. Step (2): Plasma Ion Implantation Step In step (2), as shown in FIG. 2D, a plasma ion implantation method is performed on the layer 10 made of the gas barrier layer forming material, and is represented by an arrow P. Thus, ions existing in plasma generated using an external electric field are implanted, and finally a gas barrier structure 50 having a predetermined gas barrier layer 10 is formed as shown in FIG. It is.
More specifically, the plasma ion implantation method generates a plasma in an atmosphere containing a plasma generation gas such as a rare gas and applies a negative high voltage pulse to thereby form a surface of a layer made of a gas barrier layer forming material. The basic method is to implant ions (positive ions) in the plasma.
In FIG. 2E, these boundary regions are indicated by dotted lines so that the formation position of the surface layer 11 formed in the gas barrier layer 10 can be easily understood.

  Further, as a plasma ion implantation method, ions existing in plasma generated using an external electric field are implanted into a layer made of a material for forming a gas barrier layer, or a gas barrier without using an external electric field. A method of injecting ions present in plasma generated only by an electric field generated by a negative high voltage pulse applied to a layer made of a layer forming material into the layer made of a gas barrier layer forming material is preferable.

Further, when ions in plasma are implanted into a layer made of the gas barrier layer forming material, a known plasma ion implantation apparatus can be used.
Therefore, as an example, the plasma ion implantation apparatus 200 shown in FIG. 3 can be used.
That is, the plasma ion implantation apparatus 200 basically includes a vacuum chamber 211, a microwave power source (not shown), a magnet coil (not shown), and a direct current application device (pulse power source) 208. ing.
The vacuum chamber 211 is a base film 16 (hereinafter simply referred to as the base film 16) in which the layer 10 made of the gas barrier layer forming material is formed on the base 12 and is disposed at a predetermined position inside the vacuum chamber 211. A container for performing ion implantation derived from a predetermined gas introduced from the gas inlet 203.

The direct current application device 208 is a direct current power source to which an oscilloscope 207 is attached, and is a pulse power source for applying a high voltage pulse to the base film 16 as a base material.
Therefore, the direct current application device 208 is electrically connected to the conductor 202 on which the base film 16 as a base material is disposed.

Therefore, according to the plasma ion implantation apparatus 200 configured as described above, the plasma of the predetermined gas is generated around the conductor 202 and the base film 16 by driving the microwave power source (plasma discharge electrode) and the magnet coil. Occur.
Next, after a predetermined time has elapsed, the driving of the microwave power source and the magnet coil is stopped, and the DC application device 208 is driven, and a predetermined high voltage pulse (negative voltage) is passed through the high voltage introduction terminal 210 and the conductor 202. Thus, it is applied to the workpiece 16.
Therefore, by applying such a high voltage pulse (negative voltage), ion species (nitrogen ions, etc.) in the plasma are attracted and injected into a layer made of the gas barrier layer forming material, so that at least the surface has a gas barrier layer. It can be a gas barrier structure.
Although not shown, in an implantation apparatus for continuously injecting plasma ions, the workpiece 16 can be repeatedly conveyed, wound, and sequentially plasma ion implanted.

The ion species introduced into the vacuum chamber and thus injected into the polysilazane compound is not particularly limited, but ions of rare gases such as argon, helium, neon, krypton, xenon; fluorocarbon, hydrogen , Ions of nitrogen, oxygen, carbon dioxide, chlorine, fluorine, sulfur, etc .; ions of alkane gases such as methane, ethane, propane, butane, pentane, hexane; alkene gases such as ethylene, propylene, butene, pentene Ions of alkadiene gases such as pentadiene and butadiene; ions of alkyne gases such as acetylene and methylacetylene; ions of aromatic hydrocarbon gases such as benzene, toluene, xylene, indene, naphthalene and phenanthrene Cyclopropane, cyclo Ions of cycloalkane gases such as xanthone; Ions of cycloalkene gases such as cyclopentene and cyclohexene; Gold, silver, copper, platinum, nickel, palladium, chromium, titanium, molybdenum, niobium, tantalum, tungsten, aluminum, etc. A conductive metal ion; silane (SiH ₄ ) or an organic silicon compound ion.

Among these, at least selected from the group consisting of hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, and krypton, because it can be more easily injected and a gas barrier layer having excellent gas barrier properties can be obtained. One kind of ion is preferred.
For Argon (Ar), Krypton (Kr), Helium (He), Nitrogen (N), Neon (Ne), and Oxygen (O), a Monte Carlo simulation (random number is calculated for depth direction thickness (nm), respectively. It has been found that the variation in the number of ions calculated by the numerical analysis used is small, and ion implantation can be performed at a predetermined depth position, which is suitable as an ion species to be implanted.
Note that the ion species implanted into the polysilazane compound, that is, the ion implantation gas also has a function as a plasma generation gas.

Moreover, it is preferable that the pressure of the vacuum chamber at the time of ion implantation, that is, the plasma ion implantation pressure is set to a value within the range of 0.01 to 1 Pa.
The reason for this is that when the plasma ion implantation pressure is in such a range, ions can be implanted easily and efficiently uniformly, and a gas barrier layer having excellent bending resistance and gas barrier properties can be obtained. This is because it can be formed efficiently.
Therefore, the plasma ion implantation pressure is preferably set to a value within the range of 0.01 to 1 Pa, more preferably set to a value within the range of 0.02 to 0.8 Pa, and 0.03 to 0.6 Pa. More preferably, the value is within the range.

Moreover, it is preferable to make the applied voltage (high voltage pulse / negative voltage) at the time of ion implantation into a value within the range of −1 kV to −50 kV.
This is because if the ion implantation is performed with the applied voltage being larger than −1 kV, the ion implantation amount (dose amount) may be insufficient, and a desired gas barrier property may not be obtained. is there.
On the other hand, when ion implantation is performed with an applied voltage smaller than −50 kV, the object to be processed is charged during ion implantation, and defects such as coloring of the base material 12 or the layer 10a made of the gas barrier layer forming material occur. This is because the desired gas barrier property may not be obtained.
Therefore, it is preferable to set the applied voltage at the time of ion implantation to a value in the range of -1 kV to -50 kV, more preferably to a value in the range of -1 kV to -15 kV, and in the range of -5 kV to -8 kV. More preferably, the value is within the range.

  Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to the description of the following examples without any particular reason.

[Example 1]
1. Production of gas barrier structure (1) Step 1: Layer formation step comprising a material for forming a gas barrier layer As a base material, a polyethylene terephthalate film (manufactured by Mitsubishi Plastics, “PET38 T-100”, thickness 38 μm, hereinafter referred to as “PET film” ") Was prepared.
Next, perhydropolysilazane as a polysilazane compound (manufactured by Clariant Japan Co., Ltd., “AQUAMICA NL110-20”, indicated as PHPS in the table) 100 parts by weight of polyvinyl alcohol resin “GOHSENOL NH-26” (Japan) A gas barrier layer comprising 50 parts by weight of the resin (degree of saponification 20%, expressed as PVA1 in the table) obtained by hydrolyzing in a 0.5M NaOH aqueous solution. Materials (solid content concentration: 10% by weight) were prepared.
Next, a gas barrier layer forming material was roll-coated on the PET film, and further heated at 120 ° C. for 2 minutes to form a layer made of the gas barrier layer forming material having a thickness of 150 nm (film thickness).

(2) Step 2: Plasma ion implantation step Next, a plasma ion implantation apparatus (RF power source: manufactured by JEOL Ltd., RF56000, high voltage pulse power source: Kurita Manufacturing Co., Ltd., PV-3-HSHV- shown in FIG. 0835), plasma ion implantation was performed on the obtained layer made of the material for forming a gas barrier layer under the following conditions to obtain a gas barrier structure including the gas barrier layer (thickness: 50 nm) of Example 1. .
Chamber internal pressure: 0.2 Pa
Plasma generation gas: Argon gas flow rate: 100 sccm
RF output: 1000W
RF frequency: 1000Hz
RF pulse width: 50 μsec
RF delay: 25nsec
DC voltage: -10 kV
DC frequency: 1000Hz
DC pulse width: 5 μsec
DC delay: 50 μsec
Duty ratio: 0.5%
Processing time: 300 sec

2. Measurement of Gas Barrier Structure The following measurement was performed on the obtained gas barrier structure.

(1) Elastic modulus measurement About the obtained gas barrier structure, the elastic modulus (GPa) at 23 ° C. was measured with a nanoindenter (“Nanoindentor DCM” manufactured by MTS, USA), and 10 nm from the surface of the gas barrier layer. The elastic modulus at the depth position was obtained.
Indenter type: Triangular pyramid Vibration frequency: 45Hz
Drift speed: 0.5 nm / sec.
Sample Poisson's ratio: 0.25
Surface detection threshold: 5%

(2) XPS measurement About the obtained gas barrier structure, the measurement of the abundance ratio of atoms in the gas barrier layer (surface layer) is performed using an X-ray photoelectron spectrometer (Quantum 2000, XPS: X-ray Photoelectron Spectroscopy) manufactured by ULVAC-PHI. The measurement conditions shown below were used.
X-ray source: AlKα
X-ray beam diameter: 100 μm
Electric power value: 25W
Voltage: 15kV
Extraction angle: 45 °
Degree of vacuum: 5.0 × 10 ⁻⁸ Pa
As a result, silicon, oxygen, carbon and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer were 22% silicon, 55% oxygen, 21% carbon and 2% nitrogen, respectively.

3. Evaluation of gas barrier structure The following evaluation was performed about the gas barrier structure provided with the obtained gas barrier layer.

(1) Flexibility evaluation The obtained gas barrier structure was folded in half at the center portion so that the gas barrier layer was on the outside, and the gas barrier structure in that state was formed into a laminator (manufactured by Fuji Plastics, “LAMIPACKER LPC1502”). )) Was passed twice under the conditions of a laminating speed of 5 m / min and a temperature of 23 ° C.
Next, the gas barrier layer in the gas barrier structure is folded inward so that the gas barrier layer is inside, and the gas barrier structure in this state is laminated between the two rolls of the laminator at a laminating speed of 5 m / min and a temperature of 23 ° C. The sample was further passed once under the conditions of
Thereafter, the bent portion was observed with a microscope (100 times), and the presence or absence of cracks in the gas barrier layer was visually observed to evaluate the flexibility.

(2) Water vapor transmission rate (WVTR)
About the obtained gas barrier structure, the water-vapor-permeation rate in the conditions of 40 degreeC and 90% of relative humidity was measured using the water-vapor-permeation rate measuring apparatus (The product made by MOCON, AQUATRAN).
In addition, before and after the bending test in the above crack resistance evaluation, the water vapor transmission rate was measured, and was designated as WVTR1 and WVTR2.
As an index for evaluating the gas barrier property, a case where WVTR1 and WVTR2 are both 0.2 g / m ² / day or more is indicated as x, a case where one of WVTR1 and WVTR2 is 0.2 g / m ² / day or less, ○, WVTR1 And the case where both WVTR2 was 0.2 g / m ² / day or less was evaluated as ◎.

[Examples 2 to 4]
In Examples 2 to 4, polyvinyl alcohol resins having different saponification degrees (Gothenol L-5407, Gohsenol L-7514, Gohsenol LL-02 (all manufactured by Nippon Synthetic Chemical Co., Ltd., 30% saponification degree, 40%) as the predetermined polar polymer. %, 50%, expressed as PVA 2 to 4 in the table.)))) Was used, and a gas barrier structure and the like were prepared and evaluated in the same manner as in Example 1.
In addition, silicon, oxygen, carbon and nitrogen measured by XPS at a depth position of 10 nm from the surface of the gas barrier layer obtained in Example 2 were 22% silicon, 55% oxygen, 21% carbon and 2% nitrogen. there were.
Further, silicon, oxygen, carbon and nitrogen measured by XPS at a depth position of 10 nm from the surface of the gas barrier layer obtained in Example 3 were 22% silicon, 55% oxygen, 21% carbon and 2% nitrogen. there were.
Further, silicon, oxygen, carbon and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer obtained in Example 4 were 22% silicon, 55% oxygen, 21% carbon and 2% nitrogen. there were.

[Example 5]
In Example 5, as a predetermined polar polymer, polyvinyl alcohol resin Gohsenol KP-08R (manufactured by Nippon Synthetic Chemical Co., Ltd., saponification degree 60%, indicated as PVA5 in the table) having a different saponification degree in a 0.5 M NaOH aqueous solution. Similar to Example 1 except that the resin obtained by hydrolysis was used and the gas barrier layer forming material was used in which the blending amount of PVA5 was 60 parts by weight with respect to 100 parts by weight of the polysilazane compound. In addition, a gas barrier structure and the like were prepared and evaluated.
Note that silicon, oxygen, carbon, and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer were 22% silicon, 63% oxygen, 13% carbon, and 2% nitrogen.

[Example 6]
Example 6 was the same as Example 1 except that polyvinyl acetal resin ESREC BH-6 (manufactured by Sekisui Chemical Co., Ltd., hydroxyl group content 30 mol%, represented in the table as PVAC1) was used as the predetermined polar polymer. In addition, a gas barrier structure and the like were prepared and evaluated.
The silicon, oxygen, carbon and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer were 22% silicon, 52% oxygen, 24% carbon and 2% nitrogen.

[Examples 7 to 10]
In Examples 7 to 10, as a predetermined polar polymer, polyvinyl alcohol resin Gohsenol L-5407 (manufactured by Nippon Synthetic Chemical Co., Ltd., saponification degree of 30%, indicated in the table as PVA2) having a different saponification degree is used. The gas barrier structure as in Example 1 except that the gas barrier layer-forming material was used in which the blending ratio of PVA2 was 20, 40, 60, and 80 parts by weight with respect to 100 parts by weight of the polysilazane compound. Etc. were created and evaluated.
Note that silicon, oxygen, carbon and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer obtained in Example 7 were silicon 27%, oxygen 61%, carbon 9.3%, nitrogen 2 0.7%.
Further, silicon, oxygen, carbon and nitrogen measured by XPS at a depth position of 10 nm from the surface of the gas barrier layer obtained in Example 8 were 23% silicon, 63% oxygen, 11.7% carbon, 2 nitrogen. 3%.
Further, silicon, oxygen, carbon and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer obtained in Example 9 were 20% silicon, 64% oxygen, 14% carbon and 2% nitrogen. there were.
Further, silicon, oxygen, carbon and nitrogen measured by XPS at a depth of 10 nm from the surface of the gas barrier layer obtained in Example 10 were 18% silicon, 65% oxygen, 15.2% carbon, nitrogen 1 8%.

[Comparative Example 1]
In Comparative Example 1, a polysilazane compound is not used, and only a predetermined polar polymer is used. As the polar polymer, a polyvinyl alcohol resin “GOHSENOL NH-26” (manufactured by Nippon Synthetic Chemical Co., Ltd.) having a saponification degree of 20% is used. A gas barrier structure and the like were prepared and evaluated in the same manner as in Example 1 except that the resin obtained by hydrolysis in an aqueous 0.5 M NaOH solution (represented as PVA1 in the table) was used.
Note that silicon, oxygen, carbon, and nitrogen measured by XPS at a depth of 10 nm from the surface of the obtained gas barrier layer were silicon 0%, oxygen 33%, carbon 67%, and nitrogen 0%.

[Comparative Examples 2 to 4]
In Comparative Examples 2 to 4, a polysilazane compound was not used, only a predetermined polar polymer was used, and as the polar polymer, polyvinyl alcohol resins Gohsenol L-5407, Gohsenol L-7514, Gohsenol LL- A gas barrier structure or the like was prepared and evaluated in the same manner as in Example 1 except that 02 (all Nippon Synthetic Chemistry, saponification degree 30, 40, 50%, expressed as PVA 2 to 4 in the table) was used. did.
In addition, silicon, oxygen, carbon and nitrogen measured by XPS at a depth position of 10 nm from the surface of the obtained gas barrier layer are 0% silicon, 33% oxygen, 67% carbon, 0% nitrogen in Comparative Example 2. In Comparative Example 3, silicon was 0%, oxygen was 33%, carbon was 67%, and nitrogen was 0%. In Comparative Example 4, silicon was 0%, oxygen was 33%, carbon was 67%, and nitrogen was 0%.

[Comparative Example 5]
In Comparative Example 5, a gas barrier structure or the like was created and evaluated in the same manner as in Example 1 except that a SiN film made of a silicon nitride material was formed as a gas barrier layer by a sputtering method.
Note that silicon, oxygen, and nitrogen at a depth of 10 nm from the surface of the obtained gas barrier layer were 45% silicon, 0% oxygen, 0% carbon, and 55% nitrogen, respectively.

[Comparative Example 6]
In Comparative Example 6, a gas barrier structure and the like were prepared and evaluated in the same manner as in Example 1 except that only a polysilazane compound (PHPS) was used as the gas barrier layer forming material without using a polar polymer.
Silicon, oxygen, and nitrogen at a depth of 10 nm from the surface of the obtained gas barrier layer were 30% silicon, 62% oxygen, 5% carbon, and 3% nitrogen, respectively.

[Examples 11 to 12]
In Examples 11 to 12, as a predetermined polar polymer, an ethylene-acrylic acid copolymer Nucrel AN4214C having a different copolymerization ratio of acrylic acid (manufactured by DuPont, 4% by weight of acrylic acid content, represented by EAA1 in the table) ) And ethylene-acrylic acid copolymer Nucrel N1560C (manufactured by DuPont, 12% by weight of acrylic acid content, indicated as EAA2 in the table), respectively. A structure was created and evaluated. The evaluation results obtained are shown in Table 2.
The element amounts measured by XPS at a depth of 10 nm from the surface of the gas barrier layer obtained in Example 11 were 21% silicon, 50% oxygen, 27% carbon, and 2% nitrogen.
Similarly, the element amounts measured by XPS at a depth position of 10 nm from the surface of the gas barrier layer obtained in Example 12 were 21% silicon, 53% oxygen, 24% carbon, and 2% nitrogen.

As described above in detail, according to the present invention, the gas barrier layer is subjected to the plasma ion implantation treatment on the layer made of the gas barrier layer forming material containing the predetermined polar polymer and the polysilazane compound. Flexibility increased, and the occurrence of gas barrier layer cracks when bent was able to be suppressed. Further, the water vapor transmission rate was almost 0.2 g / m ² / day or less, and the gas barrier property was excellent.
In addition, according to the method for producing a gas barrier structure of the present invention, it is possible to stably produce a gas barrier structure having a gas barrier layer having good flexibility and coating strength.
Therefore, the gas barrier structure of the present invention can be used in electrical products, electronic parts, image display devices (organic electroluminescence elements, liquid crystal display devices, etc.), solar cells (backpacks for solar cells) that have a desired gas barrier property and flexibility. Sheet), transparent conductive materials, PET bottles, packaging containers, glass containers and the like, and are expected to be used effectively.

10a: a layer made of a gas barrier layer forming material 10: a gas barrier layer 11: a surface layer 12: a base material 50: a gas barrier structure 200: a plasma ion implantation apparatus 16: a base material 12 on which a layer 10 made of a gas barrier layer forming material is formed ( Processed material)
202: Conductor 203: Gas inlet 207: Oscilloscope 208: DC application device (pulse power supply)
210: High voltage introduction terminal 211: Vacuum chamber

Claims (8)

A gas barrier structure comprising a gas barrier layer on a substrate,
The gas barrier layer is subjected to plasma ion implantation treatment on a layer made of a gas barrier layer forming material containing a polysilazane compound and a hydroxyl group-containing polymer and a carboxyl group-containing polymer, or one of the polar polymers,
The hydroxyl group-containing polymer is at least one selected from the group consisting of polyvinyl alcohol, polyvinyl formal, polyvinyl butyral, and ethylene-vinyl alcohol copolymer,
The carboxyl group-containing polymer is an ethylene - I (meth) acrylic acid copolymer der,
A gas barrier structure characterized in that the blending amount of the polar polymer is set to a value within a range of 10 to 50% by weight with respect to the total amount of the gas barrier layer forming material .   The gas barrier layer includes a surface layer containing at least silicon, oxygen, and nitrogen having a thickness of 10 to 30 nm, and the silicon amount is 15 to 30 mol% with respect to the total amount of these elements measured by XPS in the surface layer. The value within the range, the oxygen amount within the range of 45 to 70 mol%, the carbon amount within the range of 5 to 30 mol%, and the nitrogen amount within the range of 1.5 to 4 mol% The gas barrier structure according to claim 1. The gas barrier structure according to claim 1 or 2 , wherein an elastic modulus in the gas barrier layer is set to a value within a range of 1 to 2.5 GPa.   The gas barrier structure according to any one of claims 1 to 3, wherein the gas barrier layer contains the ethylene- (meth) acrylic acid copolymer as the carboxyl group-containing polymer.   The gas barrier structure according to any one of claims 1 to 3, wherein the degree of saponification of the polyvinyl alcohol is within a range of 10 to 60%.   The gas barrier structure according to any one of claims 1 to 5, wherein the gas barrier structure is used for a display member or a flexible electronic device. A method for forming a gas barrier structure comprising a gas barrier layer on a substrate,
A method for forming a gas barrier structure comprising the following steps (1) to (2).
(1) A polysilazane compound, a hydroxyl group-containing polymer and an ethylene- (meth) acrylic acid copolymer which are at least one selected from the group consisting of polyvinyl alcohol, polyvinyl formal, polyvinyl butyral, and ethylene-vinyl alcohol copolymer A carboxyl group-containing polymer, or any one of the polar polymers, with the amount of the polar polymer blended in a value within the range of 10 to 50% by weight with respect to the total amount of the gas barrier layer forming material. Lamination step of laminating a layer made of a gas barrier layer forming material on a substrate (2) Ion implantation step of plasma ion implantation into the layer made of the gas barrier layer forming material to form a gas barrier layer   8. The method for forming a gas barrier structure according to claim 7, wherein the thickness of the gas barrier layer is set to a value within a range of 50 to 10,000 nm.

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