JP5265943B2 - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and method that suppresses or prevents the vaporization of a processing liquid discharged from a substrate. <P>SOLUTION: The substrate processing apparatus 1 includes a spin chuck 3, a processing liquid nozzle, and a cup 5. The processing liquid is supplied onto the top face of a wafer W while the wafer W is rotated by means of the spin chuck 3. The processing liquid supplied onto the wafer W is discharged from the wafer W by a centrifugal force and is received by the cup 5. At this point, while the processing liquid is discharged from the processing liquid nozzle, a cleaning liquid is concurrently discharged from a cleaning liquid nozzle 38, and hence the processing liquid received by the cup 5 is rapidly cleaned away and discharged through a drainage port 32. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

This invention relates to a substrate processing equipment. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate etc. are included.

  In the manufacturing process of a semiconductor device, for example, processing using a processing liquid is performed on a substrate such as a semiconductor wafer. A substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that rotates the substrate while holding the substrate substantially horizontally in a processing chamber, and a processing liquid for supplying the processing liquid to the substrate held by the spin chuck. A nozzle and a cup for receiving the processing liquid discharged from the substrate are provided.

  The processing liquid is discharged from the processing liquid nozzle while the substrate is rotated by the spin chuck. The processing liquid discharged from the processing liquid nozzle is deposited in a range including the rotation center on the upper surface of the substrate. The processing liquid spreads toward the peripheral edge of the substrate under the centrifugal force generated by the rotation of the substrate. As a result, the processing liquid is supplied to the entire upper surface of the substrate. The processing liquid reaching the periphery of the substrate is shaken off by the centrifugal force and discharged from the substrate. The processing liquid discharged from the substrate is received and captured by the cup.

  In the substrate processing by the substrate processing apparatus, for example, a chemical solution is supplied to the rotating substrate, and the chemical solution processing is performed on the substrate. Then, after the chemical solution treatment is performed, pure water is supplied to the rotating substrate, and a rinse treatment for washing away the chemical solution on the substrate is performed. After the rinsing process is performed, a drying process for removing the pure water remaining on the substrate and drying the substrate is performed. As a method for performing this drying treatment, there is a method in which IPA (isopropyl alcohol), which is an organic solvent having higher volatility than pure water, is supplied to the upper surface of the substrate subjected to the rinsing treatment.

Specifically, IPA is supplied to the rotating substrate, and IPA dissolves in the pure water remaining on the substrate after the rinsing process and is washed away, whereby the pure water remaining on the substrate is replaced with IPA. The Then, the substrate is rotated at a high speed by the spin chuck. Thereby, the liquid component on the substrate containing IPA and pure water is shaken off, and the substrate is dried.
JP 2003-92280 A

  The processing liquid discharged from the substrate is received and captured by the cup. Moreover, the processing liquid captured by the cup flows through the cup toward the drainage port formed in the cup, and is drained from the drainage port. However, the processing liquid captured by the cup may remain in the cup without being discharged from the drain port. For example, IPA discharged from the substrate may remain in the cup.

That is, since the treatment liquid is drained from the cup by gravity, the IPA may remain in the cup without being completely drained from the cup.
On the other hand, IPA is an organic solvent that is highly volatile and easily evaporated. Therefore, when IPA remains in the cup, IPA vapor is generated in the cup, and this vapor may spread into the processing chamber. Since IPA is a flammable organic solvent having a flash point of room temperature or lower, it is not preferable that the vapor of the organic solvent spreads into the processing chamber. The above-mentioned problem is not limited to IPA, and similarly occurs when a substrate is treated with a treatment liquid containing a flammable organic solvent having a flash point of room temperature or lower.

Accordingly, an object of the present invention is to provide a substrate processing equipment which can suppress or prevent the process liquid discharged from the substrate diffuses into the processing chamber becomes steam.

The invention according to claim 1 for achieving the above object includes a substrate holding means (3) for holding the substrate (W), and a treatment liquid containing a flammable organic solvent having a flash point of room temperature or lower, A processing liquid nozzle (4) for discharging toward the substrate held by the substrate holding means, a processing liquid supply means (12) for supplying a processing liquid to the processing liquid nozzle, and a substrate holding means A rotating means (7) that swings the processing liquid on the substrate around the substrate by rotating the held substrate, and is opposed to the peripheral end surface of the substrate held by the substrate holding means and is shaken off and discharged from the substrate. A cylindrical guide part (25) for receiving the treated liquid, a cylindrical inner wall part (23) disposed inside the guide part, and an annular groove bottom surface (which connects the guide part and the inner wall part) 28) and an annular groove having an annular shape in plan view ( A cup 7) are formed (5), and the washing nozzle for ejecting a cleaning liquid (38), a cleaning liquid supply means for supplying a cleaning liquid to the cleaning nozzle (39), the treatment liquid supplying means, the cleaning liquid A processing step of processing the substrate held by the substrate holding unit by controlling the supply unit and the rotating unit to discharge the processing liquid from the processing liquid nozzle while rotating the substrate by the rotating unit; And a control means (44) for causing a cleaning process to discharge the cleaning liquid from the cleaning nozzle and cleaning the bottom surface of the groove, and a process guided to the annular groove on the bottom surface of the groove A drainage port (32) through which the liquid is discharged is formed, and the cleaning nozzle discharges the cleaning liquid in the circumferential direction of the annular groove toward the groove bottom surface in the annular groove. Facing the mouth The first discharge port to form a flow of the cleaning liquid including the (43), a substrate processing apparatus (1).

In this section, alphanumeric characters in parentheses indicate corresponding components in the embodiments described later.
According to this invention, the control means controls the treatment liquid supply means, and treats the treatment liquid containing the flammable organic solvent having a flash point below room temperature toward the substrate held by the substrate holding means. Discharge from. Thereby, the processing liquid is supplied to the substrate, and a processing step for processing the substrate is performed.

The processing liquid supplied to the substrate is discharged or scattered from the substrate. The processing liquid discharged from the substrate is received by the inner wall surface of the cup and captured by the cup. Then, the processing liquid captured by the cup is guided to an annular groove formed on the inner wall surface of the cup, and drained from a drain port formed on the groove bottom surface of the annular groove .
In addition, the control unit controls the processing liquid supply unit and the cleaning liquid supply unit to discharge the cleaning liquid from the cleaning nozzle in the circumferential direction of the annular groove toward the liquid discharge port while discharging the processing liquid from the processing liquid nozzle. Thereby, in parallel with the processing step, the cleaning liquid is supplied to the groove bottom surface of the annular groove, and the cleaning step of cleaning the groove bottom surface is performed.

  By performing the cleaning process, the processing liquid received by the cup is washed away by the cleaning liquid and drained from the drain port. This suppresses or prevents the treatment liquid from remaining in the cup. Further, by performing the cleaning process in parallel with the processing process, the processing liquid received by the cup is quickly washed away. Therefore, it is possible to suppress or prevent the vapor of the processing liquid from being generated until the processing liquid is washed away. Thereby, it can suppress or prevent that the process liquid discharged | emitted from the board | substrate becomes vapor | steam, and spreads in the process chamber in which the board | substrate holding means etc. were accommodated.

Preferably, the control unit controls the processing liquid supply unit and the cleaning liquid supply unit to discharge the cleaning liquid from the cleaning nozzle during the entire period in which the processing liquid is discharged from the processing liquid nozzle. That is, it is preferable that the cleaning process is performed during the entire period of the processing process.
In addition, the groove bottom surface may include an inclined surface (35) inclined obliquely downward toward the center of the annular groove, as in the second aspect of the invention.
According to a third aspect of the present invention, the control means causes the cleaning liquid to be discharged from the cleaning nozzle in a state where the discharge of the processing liquid from the processing liquid nozzle is stopped after performing the cleaning step. it is intended to further perform the washing step after washing the a substrate processing apparatus according to claim 1 or 2 wherein.

  According to the present invention, after the cleaning process is performed, the control means controls the processing liquid supply means and the cleaning liquid supply means to stop the discharge of the processing liquid from the processing liquid nozzle, and from the cleaning nozzle. The cleaning liquid is discharged. Thus, after the cleaning process is performed, a post-cleaning process for cleaning the inside of the cup is performed. Therefore, it is possible to suppress or prevent the treatment liquid from remaining in the cup after the cleaning process is performed. Therefore, generation | occurrence | production of the vapor | steam of a process liquid in a cup after a washing | cleaning process is performed is suppressed or prevented.

  The post-cleaning step is preferably performed immediately after the cleaning step, and particularly preferably performed continuously with the cleaning step. More specifically, in the cleaning process, from the state where the processing liquid is discharged from the processing liquid nozzle and the cleaning liquid is discharged from the cleaning nozzle, the discharge of the processing liquid from the processing liquid nozzle is stopped and the cleaning liquid from the cleaning nozzle is stopped. It is preferable to continue the discharge and shift to the post-cleaning step.

According to a fourth aspect of the present invention, the groove bottom surface is provided with a height difference so that the processing liquid guided to the annular groove flows toward the drainage port, and the cleaning nozzle is provided on the groove bottom surface. The substrate processing apparatus according to any one of claims 1 to 3, further comprising a second discharge port (43) that discharges the cleaning liquid toward a range including the highest part (36).
According to the present invention, the height difference is provided on the bottom surface of the groove so that the processing liquid guided to the annular groove flows toward the drain port, and the cleaning liquid discharged from the cleaning nozzle is the highest at the bottom surface of the groove. Is supplied to a range including a high portion. Thereby, the flow of the cleaning liquid from the highest part on the groove bottom face toward the liquid discharge port is formed. Further, when the cleaning liquid flows along the groove bottom surface, the cleaning liquid is supplied to the entire area of the groove bottom surface. As a result, the processing liquid in the annular groove is washed away and drained from the drainage port. Therefore, generation | occurrence | production of the vapor | steam of a process liquid in a cup is suppressed or prevented.

It said cleaning nozzle (38), as in the invention according to claim 5, may be provided in a pair sandwich the tallest high position in the groove bottom surface. In this case, the cleaning liquid is supplied uniformly over the entire bottom surface of the groove. That is, for example, as in the invention described in claim 6 , when the annular groove has the highest position facing the drainage port across the center of the annular groove, the cleaning liquid is applied to the entire groove bottom surface. Evenly supplied.

More specifically, if the position opposite to the liquid discharge port across the center of Oite the annular groove to the groove bottom surface is highest, the route extending from the tallest high position in the groove bottom surface to the liquid discharge port There are two (a clockwise route and a counterclockwise route). In such a case, the two routes are provided by providing a pair of cleaning nozzles sandwiching the position with the highest height on the bottom surface of the groove and supplying the cleaning liquid to a range including the highest portion on the bottom surface of the groove. The cleaning liquid can be uniformly supplied toward both of the above. As a result, the cleaning liquid is uniformly supplied to the entire area of the bottom surface of the groove. Therefore, the entire area of the groove bottom surface is uniformly cleaned, and generation of vapor of the processing liquid in the cup is suppressed or prevented.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. 2 and 3 are longitudinal sectional views showing a schematic configuration of the substrate processing apparatus 1. FIG. 2 is a cross section taken along line II-II in FIG. 1, and FIG. 3 is a cross section taken along line III-III in FIG.

  The substrate processing apparatus 1 is a single-wafer type apparatus that processes semiconductor wafers W (hereinafter simply referred to as “wafers W”) as an example of a substrate one by one. The substrate processing apparatus 1 includes a spin chuck 3 (substrate holding means) that rotates the wafer W while holding the wafer W substantially horizontally in a processing chamber 2 partitioned by partition walls, and a processing liquid for supplying the processing liquid to the wafer W. A nozzle 4 and a cup 5 for receiving and capturing the processing liquid discharged from the spin chuck 3 are provided. The spin chuck 3 can rotate the wafer W around a substantially vertical axis passing through the center of the wafer W (hereinafter referred to as “rotation axis C”).

  The spin chuck 3 is disposed on the spin base 8, a motor 7 surrounded by a cylindrical cover member 6, a disk-shaped spin base 8 that is rotated around a vertical axis by the driving force of the motor 7. And a plurality of sandwiching members 9. The lower end of the cover member 6 is fixed on a horizontally extending base 10, and the upper end extends to the vicinity of the spin base 8. At the upper end portion of the cover member 6, a hook-like member 11 is attached that protrudes almost horizontally outward from the cover member 6 and bends and extends downward.

  The plurality of clamping members 9 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the wafer W at the peripheral edge of the upper surface of the spin base 8. The plurality of holding members 9 can hold the wafer W in a substantially horizontal posture in cooperation with each other. The spin chuck 3 can rotate the wafer W around the rotation axis C in a state where the wafer W is held by a plurality of holding members 9.

The spin chuck 3 is not limited to such a configuration. For example, the lower surface (back surface) of the wafer W is vacuum-sucked to hold the wafer W in a substantially horizontal posture, and in that state, the spin chuck 3 is vertical. It may be a vacuum chucking type (vacuum chuck) that can rotate the wafer W held by rotating around the axis.
The treatment liquid nozzle 4 is disposed above the spin chuck 3 with its discharge port directed toward the upper surface of the spin base 8. The processing liquid nozzle 4 discharges the processing liquid supplied through the processing liquid supply pipe 12 (processing liquid supply means) toward the upper surface of the wafer W rotated by the spin chuck 3. The processing liquid nozzle 4 is disposed so that the discharged processing liquid is deposited in a range including the rotation center on the upper surface of the wafer W.

  A chemical liquid supply pipe 13, a rinse liquid supply pipe 14 and an IPA supply pipe 15 are connected to the processing liquid supply pipe 12. The chemical liquid supply pipe 13, the rinse liquid supply pipe 14, and the IPA supply pipe 15 are respectively provided with a chemical liquid valve 16, a rinse liquid valve 17 and an IPA valve 18. Opening and closing of these valves 16, 17, and 18 is controlled by the control unit 44 (see FIG. 6). By controlling the opening and closing of the chemical liquid valve 16, the rinsing liquid valve 17 and the IPA valve 18, the chemical liquid, the rinsing liquid and IPA (isopropyl alcohol) are selectively supplied to the processing liquid supply pipe 12. For example, when the chemical liquid valve 16 is opened with the rinse liquid valve 17 and the IPA valve 18 being closed, the chemical liquid is supplied to the processing liquid supply pipe 12.

As the chemical solution, for example, a solution containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, and hydrogen peroxide water can be used. In addition, as the rinsing liquid, for example, pure water, carbonated water, electrolytic ion water, hydrogen water, magnetic water, or ammonia water having a diluted concentration (for example, about 1 ppm) can be used.
IPA is a flammable organic solvent that has a flash point below room temperature. IPA is an organic solvent having a higher volatility than pure water and a smaller surface tension than pure water. IPA is an organic solvent that can be easily dissolved in pure water.

As IPA, 100% IPA is supplied. However, the IPA is not limited thereto, and may be a mixed solution of IPA and pure water in which pure water is mixed with IPA.
When the processing liquid is discharged from the processing liquid nozzle 4 while the wafer W is rotated by the spin chuck 3, the processing liquid is deposited in a range including the rotation center of the upper surface of the wafer W, and then the wafer W It receives the centrifugal force due to the rotation of and spreads toward the periphery. As a result, the processing liquid is supplied to the entire upper surface of the wafer W. A part of the processing liquid that has reached the periphery of the wafer W receives a centrifugal force due to the rotation of the wafer W and is shaken off around the wafer W. Further, a part of the processing liquid that has reached the periphery of the wafer W flows down from the wafer W. In this way, the processing liquid is discharged from the wafer W.

The cup 5 has a bottomed cylindrical shape, and surrounds the spin chuck 3 in a plan view as shown in FIG. The cup 5 includes an inner component member 19 and an outer component member 20 that can be moved up and down independently of each other. Each of the inner component member 19 and the outer component member 20 can receive the processing liquid discharged from the wafer W.
The inner component member 19 has a substantially rotationally symmetric shape with respect to the rotation axis C. The inner component member 19 surrounds the periphery of the spin chuck 3. A first elevating drive mechanism 21 including, for example, a ball screw mechanism or the like is connected to the inner component member 19. The internal component member 19 is moved up and down by the first lift drive mechanism 21. FIG. 2 shows a state where the inner component member 19 is located at the lower position, and FIG. 3 shows a state where the inner component member 19 is located at the upper position.

The inner component member 19 includes an annular bottom portion 22 in plan view, a cylindrical inner wall portion 23 rising upward from the inner peripheral edge of the bottom portion 22, and a cylindrical outer wall portion 24 rising upward from the outer peripheral edge of the bottom portion 22. And a cylindrical guide portion 25 that rises upward from a part of the bottom 22 corresponding to the inner periphery and the outer periphery.
The inner wall portion 23 is formed in such a length as to be accommodated between the cover member 6 and the bowl-shaped member 11 with the inner component member 19 in the upper position (see FIG. 3). ). The guide portion 25 has a cylindrical main body portion 25a rising from the bottom portion 22, and a cylindrical upper end extending obliquely upward on the center side (in the direction approaching the rotation axis C) while drawing a smooth arc from the upper end of the main body portion 25a. Part 25b. A space between the guide portion 25 and the outer wall portion 24 is a collection groove 26 for collecting and collecting the processing liquid used for processing the wafer W. Further, a space between the inner wall portion 23 and the guide portion 25 is a disposal groove 27 for collecting and discarding the processing liquid used for processing the wafer W.

  The recovery groove 26 has an annular shape and is formed by the outer peripheral surface of the guide portion 25, the inner peripheral surface of the outer wall portion 24, and a portion (groove bottom surface) from the outer periphery of the upper surface of the bottom portion 22. Although not shown, a recovery mechanism for recovering the processing liquid guided to the recovery groove 26 is connected to the bottom surface of the recovery groove 26. The processing liquid guided to the collection groove 26 is discharged from the collection groove 26 by the collection mechanism and collected in a collection tank (not shown).

On the other hand, the discard groove 27 has an annular shape and is formed by the inner peripheral surface of the guide portion 25, the outer peripheral surface of the inner wall portion 23, and a portion from the inner periphery of the upper surface of the bottom portion 22 (groove bottom surface 28). Yes. In the present embodiment, the inner peripheral surface of the guide portion 25, the outer peripheral surface of the inner wall portion 23, and the groove bottom surface 28 serve as the inner wall surface of the cup.
In the groove bottom surface 28, a plurality of exhaust ports 31 (see FIG. 2) for exhausting the atmosphere in the cup 5 and a drain port 32 (FIG. 3) for draining the processing liquid guided to the discard groove 27. Reference) is formed. As shown in FIG. 1, the plurality of exhaust ports 31 and drainage ports 32 are arranged at intervals in the circumferential direction of the discard groove 27.

  Further, as shown in FIG. 2, each exhaust port 31 is connected to a pipe 33 extending from a negative pressure source (not shown). The atmosphere in the cup 5 is exhausted from each exhaust port 31 by the negative pressure generated by the negative pressure source. The atmosphere in the cup 5 is always exhausted, for example. As shown in FIG. 3, a waste pipe 34 extending from a waste tank (not shown) is connected to the drain port 32. The treatment liquid guided to the disposal groove 27 is collected in the disposal tank via the disposal pipe 34.

The groove bottom surface 28 is provided with a height difference in the radial direction of the disposal groove 27 so that the processing liquid guided to the disposal groove 27 flows toward the inside of the disposal groove 27. That is, the groove bottom surface 28 includes an inclined surface 35 that is inclined obliquely downward toward the center of the disposal groove 27. The processing liquid guided to the discard groove 27 flows toward the inside of the discard groove 27.
The groove bottom surface 28 is provided with a height difference in the circumferential direction of the discard groove 27. That is, the groove bottom surface 28 includes a top portion 36 that is a portion having the highest height in the circumferential direction of the disposal groove 27 and a bottom portion 37 that is a portion having the lowest height in the circumferential direction. The treatment liquid guided to the disposal groove 27 flows toward the inside of the disposal groove 27 and flows toward the bottom side 37 in the circumferential direction of the disposal groove 27. In the present embodiment, the circumferential direction of the disposal groove 27 is the flow direction of the processing liquid in the groove.

  The top portion 36 and the bottom side portion 37 are provided at positions facing each other across the center of the disposal groove 27 on the groove bottom surface 28. FIG. 3 shows a cross section of the substrate processing apparatus 1 including the top 36, the bottom 37, and the center of the discard groove 27. In FIG. 3, the cross section of the cup 5 illustrated on the left side of the rotation axis C is a cross section including the top portion 36, and the cross section of the cup 5 illustrated on the right side of the rotation axis C is a cross section including the bottom portion 37. As shown in FIG. 3, the drainage port 32 is formed in the bottom side portion 37. Therefore, the treatment liquid guided to the waste groove 27 is guided to the bottom side portion 37 by the inclination of the groove bottom surface 28 and then discharged from the drain port 32 formed in the bottom side portion 37. Thereby, the processing liquid in the disposal groove 27 is surely drained.

  As shown in FIG. 3, a cleaning nozzle 38 for cleaning the inside of the cup 5 is disposed in the vicinity of the top portion 36. As shown in FIG. 1, a pair of cleaning nozzles 38 is provided, and these nozzles 38, 38 are arranged on both sides of the top portion 36 with respect to the circumferential direction of the disposal groove 27. A branch pipe 40 connected to a common cleaning liquid supply pipe 39 (cleaning liquid supply means) is connected to each cleaning nozzle 38. A cleaning liquid is supplied to each cleaning nozzle 38 through a cleaning liquid supply pipe 39 and a branch pipe 40. The cleaning liquid supply pipe 39 is provided with a cleaning liquid valve 41. By opening the cleaning liquid valve 41, the cleaning liquid is supplied to the pair of cleaning nozzles 38, 38 simultaneously.

Each cleaning nozzle 38 supplies a cleaning liquid into the waste groove 27. As described above, since each cleaning nozzle 38 is disposed in the vicinity of the top portion 36, the cleaning liquid discharged from each cleaning nozzle 38 reaches a range including the top portion 36 on the groove bottom surface 28.
The cleaning liquid deposited in the range including the top portion 36 in the groove bottom surface 28 flows in the circumferential direction of the waste groove 27 toward the bottom side portion 37 where the liquid discharge port 32 is formed due to the inclination of the groove bottom surface 28. In the present embodiment, since the discard groove 27 has an annular shape, two routes (a clockwise route and a counterclockwise route) from the top portion 36 to the bottom side portion 37 are formed in the discard groove 27. Therefore, the cleaning liquid deposited in the range including the top portion 36 on the groove bottom surface 28 goes toward the bottom portion 37 through one of the two routes.

As the cleaning liquid flows along the groove bottom surface 28 from the top portion 36 toward the bottom side portion 37, the cleaning liquid is supplied to the entire groove bottom surface 28. Further, the cleaning liquid flows from the top part 36 toward the bottom part 37, whereby the processing liquid in the disposal groove 27 is washed away. Thereby, the inside of the disposal groove 27 is cleaned.
The outer component member 20 has a substantially rotationally symmetric shape with respect to the rotation axis C. The outer component member 20 surrounds the periphery of the spin chuck 3 outside the guide portion 25 of the inner component member 19. For example, a second elevating drive mechanism 42 including a ball screw mechanism is connected to the outer component member 20. The outer component member 20 is moved up and down by the second lifting drive mechanism 42. In FIG. 2, the state in which the outer component member 20 is located at the upper position is indicated by a solid line, and the state in which the outer component member 20 is located at the lower position is indicated by a two-dot chain line.

The outer component member 20 has a cylindrical lower end 20a that is coaxial with the guide portion 25, and a cylindrical upper end that extends obliquely upward from the upper end of the lower end 20a while drawing a smooth arc on the center side (direction approaching the rotation axis C). Part 20b and a folded part 20c formed by folding the tip of upper end part 20b downward.
The lower end portion 20a is located on the recovery groove 26 and is formed to have a length that is accommodated in the recovery groove 26 in a state where the inner component member 19 and the outer component member 20 are closest to each other. The upper end portion 20b is provided so as to overlap the upper end portion 25b of the guide portion 25 of the inner component member 19 in the vertical direction, and the inner component member 19 and the outer component member 20 are closest to each other in the guide portion 25. It is formed to be close to the upper end portion 25b with a very small gap. The folded portion 20c is formed so as to overlap the upper end portion 25b of the guide portion 25 in the horizontal direction with the inner component member 19 and the outer component member 20 being closest to each other.

  The first and second elevating drive mechanisms 21, 42 lower the inner component member 19 and raise the outer component member 20, whereby the inner peripheral surface of the outer component member 20 is held on the spin chuck 3. It can be made to oppose a peripheral end surface. That is, as shown in FIG. 2, the inner component member 19 is arranged at the lower position and the outer component member 20 is arranged at the upper position, so that the upper end portion 25 b of the guide portion 25 of the inner component member 19 and the outer component member are arranged. An opening facing the peripheral end surface of the wafer W is formed between the upper end portion 20b of the wafer 20. Thereby, the inner peripheral surface of the outer component member 20 is opposed to the peripheral end surface of the wafer W held by the spin chuck 3.

  Further, the first and second elevating drive mechanisms 21 and 42 raise the inner component member 19 and the outer component member 20 to raise the inner peripheral surface of the inner component member 19 (the inner peripheral surface of the guide portion 25) as a spin chuck. 3 can be opposed to the peripheral end surface of the wafer W held on the wafer 3. That is, as shown in FIG. 3, the inner component member 19 and the outer component member 20 are arranged at the upper positions, so that the inner peripheral surface of the guide portion 25 is placed on the peripheral end surface of the wafer W held by the spin chuck 3. Opposed. Thereby, the inner peripheral surface of the inner component member 19 is opposed to the peripheral end surface of the wafer W held by the spin chuck 3.

  In the present embodiment, the chemical liquid is supplied from the processing liquid nozzle 4 to the upper surface of the wafer W rotated by the spin chuck 3 with the inner peripheral surface of the outer component member 20 facing the peripheral end surface of the wafer W. Accordingly, the chemical liquid that scatters around the wafer W due to the rotation of the wafer W enters between the upper end portion 25b of the guide portion 25 and the upper end portion 20b of the outer component member 20, and is received by the inner peripheral surface of the outer component member 20. It is done. Then, the chemical liquid received by the inner peripheral surface of the outer component member 20 flows down and is guided to the recovery groove 26. Thereby, the chemical used for processing the wafer W is guided to the recovery groove 26.

  In this embodiment, the rinsing liquid or IPA is applied from the processing liquid nozzle 4 to the upper surface of the wafer W rotated by the spin chuck 3 with the inner peripheral surface of the inner component member 19 facing the peripheral end surface of the wafer W. Supplied. Accordingly, the rinsing liquid and IPA scattered around the wafer W by the rotation of the wafer W are received by the inner peripheral surface of the guide portion 25. The rinse liquid and IPA received by the inner peripheral surface of the guide portion 25 flow down and are guided to the disposal groove 27. Further, the rinse liquid and IPA flowing down from the peripheral edge of the wafer W directly jump into the discard groove 27. As a result, the rinse liquid and IPA used for processing the wafer W are guided to the discard groove 27.

FIG. 4 is an enlarged view of a part of the cleaning nozzle 38. Hereinafter, the cleaning nozzle 38 will be described with reference to FIGS. 3 and 4.
Each cleaning nozzle 38 is inserted obliquely upward from the bottom 22 of the internal component 19 with respect to the internal component 19. The front end portion of each cleaning nozzle 38 protrudes from the inclined surface 35 of the groove bottom surface 28. The tip of each cleaning nozzle 38 is located in the disposal groove 27. Each cleaning nozzle 38 has, for example, a cylindrical shape with a sealed tip.

  The cleaning liquid is discharged from each cleaning nozzle 38 in a cross direction (four directions) that is orthogonal to the central axis of the cleaning nozzle 38 and that has a point on the central axis as the center. That is, four discharge ports 43 arranged at equal intervals in the circumferential direction of the cleaning nozzle 38 are formed at the tip of each cleaning nozzle 38. The cleaning liquid is discharged in a direction opposite to each other from the pair of discharge ports 43, 43 facing the radial direction of the cleaning nozzle 38.

  Two directions (the discharge directions from the two upper and lower discharge ports 43) of the cross direction that is the discharge direction of the cleaning liquid are substantially parallel to the inclined surface 35 and run along the circumferential direction of the disposal groove 27. Further, the remaining two directions (the discharge directions from the two right and left discharge ports 43) of the cross direction are substantially parallel to the inclined surface 35 and are along the radial direction of the disposal groove 27 in plan view. That is, each cleaning nozzle 38 is parallel to the inclined surface 35 and is substantially parallel to the flow direction of the processing liquid in the disposal groove 27, and is parallel to the inclined surface 35 and perpendicular to the flow direction of the processing liquid. It arrange | positions so that a washing | cleaning liquid may be discharged to a direction.

  FIG. 5 is a schematic diagram showing a cross section of the groove bottom surface 28 developed along the circumferential direction of the disposal groove 27 and the arrangement of the pair of cleaning nozzles 38, 38. In FIG. 5, the horizontal axis indicates the circumferential direction of the disposal groove 27, and the vertical axis indicates the height. The position of 0 degree on the horizontal axis is the top part 36, and the position of ± 180 degrees is the base part 37. The cross section of the groove bottom surface 28 developed along the circumferential direction of the disposal groove 27 has, for example, a mountain shape with the top 36 as a vertex.

Hereinafter, the cleaning of the cup 5 by the cleaning nozzle 38 will be described with reference to FIGS. 3 and 5. In the following, the clockwise direction from the top 36 to the bottom 37 along the groove bottom surface 28 is referred to as the right side, and the counterclockwise direction is referred to as the left side.
The cleaning liquid is discharged from the two upper and lower discharge ports 43 of each cleaning nozzle 38 in a direction parallel to the inclined surface 35 and perpendicular to the flow direction of the processing liquid in the waste groove 27. The cleaning liquid is deposited in a range including the top portion 36 in the groove bottom surface 28. More specifically, the cleaning liquid discharged from the upper and lower discharge ports 43 of the cleaning nozzle 38 disposed on the right side of the top portion 36 is deposited at a position slightly to the right of the top portion 36 and the top portion 36 on the groove bottom surface 28. To do. In addition, the cleaning liquid discharged from the upper and lower discharge ports 43 of the cleaning nozzle 38 disposed on the left side of the top portion 36 lands on a position slightly on the left side of the top portion 36 and the top portion 36 of the groove bottom surface 28.

  The cleaning liquid that has landed on the top 36 flows to the right or left along the groove bottom surface 28. In addition, the cleaning liquid that has reached the right side of the top portion 36 of the groove bottom surface 28 flows to the right side along the groove bottom surface 28. In addition, the cleaning liquid that has reached the position slightly to the left of the top portion 36 of the groove bottom surface 28 flows to the left along the groove bottom surface 28. As the cleaning liquid flows along the groove bottom surface 28 from the top portion 36 toward the bottom side portion 37, the cleaning liquid is supplied to the entire groove bottom surface 28. Thereby, the processing liquid in the waste groove 27 is washed away, and the waste groove 27 is washed.

  In the present embodiment, the pair of cleaning nozzles 38 are provided in the vicinity of the top portion 36 and on both sides of the disposal groove 27 in the circumferential direction of the disposal groove 27. The cleaning liquid is reliably supplied to the left and right sides. Therefore, the cleaning liquid is reliably supplied to the two routes in the disposal groove 27. As a result, the entire area within the disposal groove 27 is reliably washed.

  On the other hand, the cleaning liquid is discharged from the two right and left discharge ports 43 of each cleaning nozzle 38 in a direction parallel to the inclined surface 35 and along the flow direction of the processing liquid in the disposal groove 27. More specifically, as shown in FIG. 5, the two right and left discharge ports 43 of the cleaning nozzle 38 disposed on the right side of the top portion 36 are substantially parallel to the right groove bottom surface 28, and are disposed in the disposal groove 27. The cleaning liquid is discharged in a direction along the flow direction of the processing liquid. Further, as shown in FIG. 5, from the two left and right discharge ports 43 of the cleaning nozzle 38 disposed on the left side of the top portion 36, it is substantially parallel to the left groove bottom surface 28, and the treatment liquid flows in the waste groove 27. The cleaning liquid is discharged in a direction along the direction.

The cleaning liquid discharged along the flow direction of the processing liquid reaches the right or left groove bottom surface 28 and flows along the groove bottom surface 28. Further, since the cleaning liquid discharged in the direction along the flow direction of the processing liquid is given a momentum toward the bottom portion 37, the cleaning liquid is directed toward the bottom portion 37 by landing on the groove bottom surface 28. Is formed in the waste groove 27.
In the present embodiment, the cleaning liquid discharged from each cleaning nozzle 38 forms a flow of the cleaning liquid toward the bottom portion 37 in the discard groove 27, so that the treatment liquid guided into the discard groove 27 is surely secured to the bottom. It flows to part 37. Therefore, even if a small amount of processing liquid is introduced into the disposal groove 27, the processing liquid is pushed away by the flow of the cleaning liquid, and the processing liquid is reliably guided to the liquid discharge port 32. Thereby, the processing liquid guided into the disposal groove 27 is surely drained.

In the present embodiment, since the cleaning liquid is discharged from each cleaning nozzle 38 in a direction substantially parallel to the inclined surface 35, the discharged cleaning liquid is reliably supplied to the disposal groove 27 along the inclined surface 35. That is, for example, the cleaning liquid discharged from each cleaning nozzle 38 is prevented from entering a portion where the cleaning liquid should not enter, such as a gap in the apparatus or a rotation mechanism.
FIG. 6 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1.

The substrate processing apparatus 1 includes a control unit 44 having a configuration including a microcomputer. The control unit 44 is connected with the chemical liquid valve 16, the rinse liquid valve 17, the IPA valve 18, the cleaning liquid valve 41, and the first and second elevating drive mechanisms 21 and 42 as control targets.
FIG. 7 is a process diagram for explaining an example of the processing of the wafer W by the substrate processing apparatus 1. FIG. 8 is a graph showing the open / close state of the valves 6, 7, 8, 41 and the rotation speed of the wafer W by the spin chuck 3 in an example of the processing of the wafer W.

  The wafer W to be processed is loaded into the processing chamber 2 with the inner component member 19 and the outer component member 20 arranged at the lower position, and spins, for example, with the surface of the wafer W, which is a device formation surface, facing upward. It is held by the chuck 3 (step S1). When the wafer W is held by the spin chuck 3, the second elevating drive mechanism 42 is controlled by the controller 44 and the outer component member 20 is raised to the upper position. Thus, an opening is formed between the upper end portion 25b of the guide portion 25 of the inner component member 19 and the upper end portion 20b of the outer component member 20 so as to face the peripheral end surface of the wafer W (see FIG. 2).

  Next, the motor 7 is controlled by the controller 44, and the wafer W held on the spin chuck 3 is rotated at a predetermined rotation speed (for example, 800 rpm) (step S2). Thereafter, the chemical solution valve 16 is opened by the control unit 44, and a chemical solution (for example, hydrofluoric acid) is discharged toward the upper surface of the wafer W (step S3). The chemical liquid discharged from the processing liquid nozzle 4 is deposited in a range including the center of rotation of the upper surface of the wafer W, and then spreads toward the periphery under the centrifugal force due to the rotation of the wafer W. Thereby, the chemical solution is supplied to the entire upper surface of the wafer W, and the chemical treatment is performed on the upper surface of the wafer W.

On the other hand, the chemical solution that has reached the periphery of the wafer W receives a centrifugal force due to the rotation of the wafer W and is shaken off around the wafer W. Further, the chemical liquid shaken off around the wafer W jumps between the upper end portion 25 b of the guide portion 25 and the upper end portion 20 b of the outer component member 20 and is guided to the recovery groove 26. Thereby, the chemical used for processing the wafer W is guided to the recovery groove 26.
When the chemical liquid processing is performed for a predetermined time, the chemical liquid valve 16 is closed by the control unit 44, and the supply of the chemical liquid from the processing liquid nozzle 4 to the wafer W is stopped (step S4). And the 1st raising / lowering drive mechanism 21 is controlled by the control part 44, and the internal structural member 19 is raised to an upper position (refer FIG. 3). Thereby, the inner peripheral surface of the guide portion 25 is opposed to the peripheral end surface of the wafer W held by the spin chuck 3.

  When the inner peripheral surface of the guide unit 25 faces the peripheral end surface of the wafer W held by the spin chuck 3, the rinsing liquid valve 17 is opened by the control unit 44 so that the processing liquid nozzle 4 faces the upper surface of the wafer W. Then, a rinse liquid (for example, pure water) is discharged (step S5). The rinse liquid discharged from the processing liquid nozzle 4 is deposited in a range including the center of rotation of the upper surface of the wafer W, and then spreads toward the periphery under the centrifugal force due to the rotation of the wafer W. Thus, the rinsing liquid is supplied to the entire upper surface of the wafer W, and the rinsing process for washing away the chemical liquid on the wafer W is performed on the upper surface of the wafer W. Before the rinsing liquid is discharged, the motor 7 is controlled by the controller 44, and the wafer W held on the spin chuck 3 is rotated at a lower rotational speed (for example, 600 rpm) than during the chemical liquid processing. The rinse process is performed.

Further, the chemical liquid washed off from the wafer W by the rinsing liquid and the rinsing liquid discharged from the wafer W after reaching the peripheral edge of the wafer W are received by the inner peripheral surface of the guide portion 25 or directly fly into the disposal groove 27. Or is guided to the disposal groove 27. As a result, the chemical solution and the rinse solution used for processing the wafer W are guided to the discard groove 27.
At this time, the upper end portion 25b of the guide portion 25 and the upper end portion 20b of the outer component member 20 are close to each other with a very small gap, and the folded portion 20c of the outer component member 20 is the upper end portion of the guide portion 25. 25b and in the horizontal direction. Accordingly, the rinsing liquid is prevented from entering between the guide portion 25 and the outer component member 20. This prevents the chemical liquid and the rinsing liquid from coming into contact with each other in the collection groove 26.

  When the rinsing process is performed for a predetermined time, the rinsing liquid valve 17 is closed by the controller 44, and the supply of the rinsing liquid from the processing liquid nozzle 4 to the wafer W is stopped (step S6). Then, the IPA valve 18 and the cleaning liquid valve 41 are simultaneously opened by the control unit 44, for example (step S7). Thereby, IPA is discharged from the treatment liquid nozzle 4 and a cleaning liquid (for example, pure water) is discharged from the pair of cleaning nozzles 38 and 38.

  The cleaning liquid discharged from the pair of cleaning nozzles 38 and 38 is deposited in a range including the top 36 on the groove bottom surface 28. Then, the cleaning liquid that has landed on the groove bottom surface 28 flows in the circumferential direction of the waste groove 27 toward the bottom side portion 37 where the drainage port 32 is formed due to the inclination of the groove bottom surface 28. As a result, the cleaning liquid is supplied to the entire area of the groove bottom surface 28. In addition, since the cleaning liquid is discharged from each cleaning nozzle 38 in a direction along the circumferential direction of the disposal groove 27, a flow of the cleaning liquid toward the bottom portion 37 is formed in the disposal groove 27.

  On the other hand, the IPA discharged from the processing liquid nozzle 4 is deposited in a range including the center of rotation of the upper surface of the wafer W. Then, it receives a centrifugal force due to the rotation of the wafer W and spreads toward the periphery. As a result, IPA is supplied to the entire upper surface of the wafer W, and the rinse liquid on the wafer W is washed away by the IPA. IPA is an organic solvent that can easily dissolve pure water used as a rinsing liquid in an example of this treatment. Therefore, a replacement process for replacing the rinse liquid on the wafer W with IPA is performed on the upper surface of the wafer W while the IPA is dissolved in the rinse liquid adhering to the wafer W (processing step).

Further, the rinse liquid washed off from the wafer W by the IPA and the IPA discharged from the wafer W after reaching the peripheral edge of the wafer W are received by the inner peripheral surface of the guide portion 25 or directly enter the disposal groove 27. Or led to the waste groove 27. As a result, the rinse liquid and IPA used for processing the wafer W are guided to the discard groove 27.
As described above, the cleaning liquid is supplied to the waste groove 27, and the flow of the cleaning liquid toward the bottom side portion 37 is formed in the waste groove 27. Therefore, the rinse liquid and the IPA guided to the disposal groove 27 are quickly washed away by the cleaning liquid and discharged from the cup 5 through the drain port 32 (cleaning process). Thereby, even after the processing by IPA is completed, it is possible to suppress the rinsing liquid and IPA from remaining in the disposal groove 27, and the rinsing liquid and IPA guided to the disposal groove 27 are evaporated in the disposal groove 27, Generation | occurrence | production of the rinse liquid and the vapor | steam of IPA is suppressed. Further, since the rinse liquid and the IPA are washed away as soon as they reach the disposal groove 27, the generation of the rinse liquid and the IPA vapor is suppressed or prevented before the rinse liquid and the IPA are washed away.

When a predetermined time elapses after the IPA valve 18 is opened, the control unit 44 closes the IPA valve 18 (step S8).
Further, the cleaning liquid valve 41 is opened, and the discharge of the cleaning liquid from the pair of cleaning nozzles 38 is continued. That is, the control unit 44 discharges the cleaning liquid from the pair of cleaning nozzles 38 and 38 in a state where the discharge of IPA from the processing liquid nozzle 4 is stopped (post-cleaning step).

  When the IPA valve 18 is closed, the motor 7 is controlled by the controller 44, and the rotation speed of the wafer W is changed to a predetermined high rotation speed (for example, 3000 rpm) (step S9). As a result, the IPA adhering to the wafer W is shaken off around the wafer W. Therefore, the upper surface of the wafer W is dried in a state where the rinse liquid is completely removed. As a result, the occurrence of poor drying such as a watermark on the upper surface of the wafer W is suppressed. Further, since IPA is a highly volatile organic solvent, the time required for drying the wafer W is shortened.

  On the other hand, while the wafer W is rotated at a high speed, the cleaning liquid valve 41 is opened, and the discharge of the cleaning liquid from the pair of cleaning nozzles 38 and 38 is continued. In other words, the control unit 44 continues the post-cleaning process in which the cleaning liquid is discharged from the pair of cleaning nozzles 38 in a state where the discharge of the IPA from the processing liquid nozzle 4 is stopped. Accordingly, a flow of the cleaning liquid toward the bottom portion 37 is formed in the discard groove 27, and the IPA shaken off from the wafer W and guided to the discard groove 27 is quickly washed away by the cleaning liquid. As a result, the IPA guided to the discard groove 27 is drained from the discard groove 27 through the drain port 32.

IPA is an organic solvent that is highly volatile and easily evaporated. Therefore, by quickly washing away the IPA guided to the discard groove 27, it is possible to reliably suppress or prevent the generation of IPA vapor in the discard groove 27. This suppresses or prevents the IPA discharged from the wafer W from becoming vapor and spreading into the processing chamber 2.
When the high-speed rotation of the wafer W is continued for a predetermined time, the motor 7 is stopped by the control unit 44, and the rotation of the wafer W by the spin chuck 3 is stopped (step S10). Then, the cleaning liquid valve 41 is closed by the control unit 44, and the supply of the cleaning liquid from the cleaning nozzle 38 to the waste groove 27 is stopped (step S11). Further, the control unit 44 controls the first and second elevating drive mechanisms 21 and 42 to lower the inner component member 19 and the outer component member 20 to their lower positions. Thereafter, the processed wafer W is unloaded from the processing chamber 2 (step S12).

As described above, in the present embodiment, in the processing of the wafer W, the cleaning liquid is discharged from the pair of cleaning nozzles 38 and 38 while discharging the IPA from the processing liquid nozzle 4 (steps S7 to S8). Subsequently, the cleaning liquid is discharged from the pair of cleaning nozzles 38 in a state where the discharge of IPA from the processing liquid nozzle 4 is stopped (steps S8 to S11).
By discharging the cleaning liquid from the pair of cleaning nozzles 38, 38 while discharging the IPA from the processing liquid nozzle 4, the IPA discharged from the wafer W and guided to the disposal groove 27 is quickly washed away from the drain port 32. It can be drained. Thereby, it is possible to suppress or prevent the generation of IPA vapor in the discard groove 27 due to the IPA discharged from the wafer W remaining in the discard groove 27. This suppresses or prevents the IPA discharged from the wafer W from becoming vapor and spreading into the processing chamber 2.

  In addition, the discharge of the cleaning liquid from the pair of cleaning nozzles 38 and 38 in a state where the discharge of the IPA from the processing liquid nozzle 4 is stopped, and the discharge of the IPA from the processing liquid nozzle 4 is stopped. The inside of the cup 5 can be washed. Thus, it is possible to suppress or prevent the generation of IPA vapor in the disposal groove 27 after the discharge of IPA from the processing liquid nozzle 4 is stopped.

  IPA is a flammable organic solvent that has a flash point below room temperature. For this reason, it is not preferable that the vapor of the organic solvent spreads in the processing chamber 2. In addition, since the inside of the cup 5 is constantly exhausted from the plurality of exhaust ports 31 formed in the groove bottom surface 28, even if IPA vapor is generated, it is basically that the IPA vapor spreads in the processing chamber 2. However, it is possible to suppress or prevent the generation of IPA vapor by washing the inside of the cup 5 as in this embodiment, so that the vapor of the organic solvent spreads in the processing chamber 2. This can be reliably suppressed or prevented.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the claims. For example, in the above-described embodiment, the case where the pair of cleaning nozzles 38 is used as a cleaning nozzle for discharging the cleaning liquid is described, but the present invention is not limited to this. That is, as shown in FIG. 9, an annular pipe 45 extending in the circumferential direction of the disposal groove 27 along the inner peripheral surface of the guide portion 25 of the inner component member 19 may be used as the cleaning nozzle. In FIG. 9, the same reference numerals as those in FIGS. 1 to 8 are assigned to the same components as those shown in FIGS.

  A plurality of discharge ports 46 for discharging the cleaning liquid are formed in the pipe 45. These discharge ports 46 are arranged side by side with a predetermined interval in the longitudinal direction of the pipe 45. Further, these discharge ports 46 are arranged on one side (upper side) and the other side (lower side) of the pipe 45 so as to face each other across the center of the cross section of the pipe 45. The cleaning liquid is discharged from the pipe 45 in two directions opposite to each other. The pipe 45 is held inside the guide portion 25 by the holding member 47 so that the discharge direction of the cleaning liquid is along the inner peripheral surface of the guide portion 25.

The cleaning liquid discharged from the pipe 45 directly deposits at a plurality of positions separated in the circumferential direction in the disposal groove 27. Therefore, the cleaning liquid is reliably supplied to a plurality of positions in the disposal groove 27, and these positions are reliably cleaned. Therefore, generation of vapor of the processing liquid (IPA or the like) discharged from the wafer W is reliably suppressed or prevented.
Moreover, although the above-mentioned embodiment demonstrated the case where IPA was used as a process liquid containing the combustible organic solvent whose flash point is below normal temperature, it is not restricted to this. That is, for example, an alcohol-based organic solvent such as methanol or ethanol may be used as the treatment liquid containing the organic solvent. Moreover, the liquid mixture of these organic solvents and another process liquid may be used as a process liquid containing the said organic solvent.

  In the example of the processing of the wafer W (step S7) described above, the case where the control unit 44 opens the IPA valve 18 and the cleaning liquid valve 41 at the same time has been described. The cleaning liquid valve 41 may be opened before. That is, the control unit 44 discharges the cleaning liquid from the cleaning nozzle 38 and stops the inside of the cup 5 while stopping the discharge of the processing liquid from the processing liquid nozzle 4 before performing the replacement process (processing step). A pre-cleaning step for cleaning may be performed. In this case, it is possible to suppress or prevent IPA from adhering to the groove bottom surface 28.

  That is, by opening the cleaning liquid valve 41 before the IPA valve 18, the groove bottom surface 28 can be covered with the cleaning liquid in advance. Therefore, the IPA discharged from the wafer W is guided into the waste groove 27 in a state where the groove bottom surface 28 is coated with the cleaning liquid. As a result, the contact of IPA with the groove bottom surface 28 is suppressed or prevented, and the adhesion of IPA to the groove bottom surface 28 is suppressed or prevented.

In the above-described embodiment, the wafer W is taken up as a substrate to be processed. However, the substrate is not limited to the wafer W, but a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for an FED, a substrate for an optical disk, or a substrate for a magnetic disk. Other types of substrates such as a magneto-optical disk substrate and a photomask substrate may be processed.
In addition, various design changes can be made within the scope of matters described in the claims.

It is a top view which shows schematic structure of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a longitudinal cross-sectional view which shows schematic structure of the said substrate processing apparatus. It is a longitudinal cross-sectional view which shows schematic structure of the said substrate processing apparatus. It is the figure which expanded a part of washing nozzle. It is a schematic diagram which shows the cross section of the groove | channel bottom developed along the circumferential direction of a discard groove | channel, and arrangement | positioning of a pair of washing nozzle. It is a block diagram for demonstrating the electrical structure of the said substrate processing apparatus. It is process drawing for demonstrating an example of the process of the wafer by the said substrate processing apparatus. It is a graph which shows the rotational speed of the wafer by the open / close state of each valve | bulb in an example of the said wafer processing, and a spin chuck. It is a longitudinal cross-sectional view which shows schematic structure of the substrate processing apparatus which concerns on other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Spin chuck (substrate holding means)
4 treatment liquid nozzle 5 cup 12 treatment liquid supply pipe (treatment liquid supply means)
27 Waste groove (groove, annular groove)
28 groove bottom surface 32 drainage port 36 top portion (the highest portion on the groove bottom surface)
38 Cleaning nozzle 39 Cleaning liquid supply pipe (cleaning liquid supply means)
44 Control unit (control means)
45 Piping (cleaning liquid nozzle)
46 Discharge port (multiple discharge ports)
W Wafer (Substrate)

Claims (6)

Substrate holding means for holding the substrate;
A processing liquid nozzle for discharging a processing liquid containing a flammable organic solvent having a flash point below room temperature toward a substrate held by the substrate holding means;
A processing liquid supply means for supplying the processing liquid to the processing liquid nozzle;
Rotating means for swinging the processing liquid on the substrate around the substrate by rotating the substrate held by the substrate holding means;
A cylindrical guide portion that faces the peripheral end surface of the substrate held by the substrate holding means and receives the processing liquid shaken off and discharged from the substrate, and a cylindrical inner wall portion disposed inside the guide portion; A cup formed with an annular groove in a plan view formed by an annular groove bottom surface connecting the guide part and the inner wall part;
A cleaning nozzle for discharging the cleaning liquid ;
Cleaning liquid supply means for supplying the cleaning liquid to the cleaning nozzle;
The processing liquid supply means, the cleaning liquid supply means, and the rotation means are controlled, and the substrate held by the substrate holding means is processed by discharging the processing liquid from the processing liquid nozzle while rotating the substrate by the rotation means. A control means for performing a processing step and a cleaning step of cleaning the groove bottom surface by discharging a cleaning liquid from the cleaning nozzle in parallel with the processing step,
On the bottom surface of the groove, a drainage port for discharging the processing liquid guided to the annular groove is formed,
The cleaning nozzle includes a first discharge port that forms a flow of cleaning liquid toward the drain port by discharging cleaning liquid in a circumferential direction of the annular groove toward the groove bottom surface in the annular groove. Processing equipment.   The substrate processing apparatus according to claim 1, wherein the groove bottom surface includes an inclined surface inclined obliquely downward toward a center of the annular groove.   The control means further includes a post-cleaning step of cleaning the inside of the cup by discharging the cleaning liquid from the cleaning nozzle in a state where the discharge of the processing liquid from the processing liquid nozzle is stopped after performing the cleaning step. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is to be performed. On the bottom surface of the groove, a height difference is provided so that the processing liquid guided to the annular groove flows toward the drain port,
The substrate processing apparatus according to claim 1, wherein the cleaning nozzle further includes a second discharge port that discharges the cleaning liquid toward a range including a portion having the highest height on the groove bottom surface.   The substrate processing apparatus according to claim 4, wherein a pair of the cleaning nozzles are provided across a position having the highest height on the bottom surface of the groove.   The substrate processing apparatus according to claim 4, wherein the bottom surface of the groove is highest at a position facing the drainage port across the center of the annular groove.

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