JP5169068B2 - Thin film solar cell manufacturing equipment - Google Patents

Description

  The present invention relates to an apparatus for manufacturing a thin film solar cell in which a metal thin film serving as an electrode is formed on the surface of a strip-shaped flexible film substrate. The present invention relates to an apparatus for manufacturing a prevented thin film solar cell.

  Currently, clean energy research and development is underway from the standpoint of environmental protection. Among them, solar cells are attracting attention because their resources (sunlight) are infinite and pollution-free.

  Thin film solar cells are expected to become the mainstream of future solar cells because they are thin and lightweight, inexpensive to manufacture, and easy to increase in area.

  Conventional thin-film solar cells have used glass substrates, but research and development of flexible solar cells using plastic films and metal films has been promoted in terms of weight reduction, workability, and mass productivity. Taking advantage of this flexibility, mass production became possible by a roll-to-roll method or a stepping roll method.

  In the above thin film solar cell, a plurality of photoelectric conversion elements (or cells) formed by laminating a metal electrode layer, a photoelectric conversion layer made of a thin film semiconductor layer, and a transparent electrode layer on a flexible electrically insulating film substrate are formed. . The voltage required for the metal electrode of the first photoelectric conversion element and the transparent electrode of the last photoelectric conversion element by repeatedly connecting the metal electrode of one photoelectric conversion element and the transparent electrode of the adjacent photoelectric conversion element. Can be output.

  Such a photoelectric conversion element and its series connection are formed by forming an electrode layer and a photoelectric conversion layer, patterning each layer, and a combination procedure thereof. The configuration and manufacturing method of the solar cell are described in, for example, (Patent Document 1 and Patent Document 2).

  FIG. 2 is a perspective view of a flexible thin-film solar cell using a plastic film as a substrate. The unit photoelectric conversion element 62 formed on the front surface of the substrate 61 and the connection electrode layer 63 formed on the back surface of the substrate 61 are each completely separated into a plurality of unit units, and are formed by shifting the separation positions.

  For this reason, the current generated in the photoelectric conversion layer 65, which is an amorphous semiconductor portion of the element 62, is first collected in the transparent electrode layer 66, and then on the back surface through the current collecting holes 67 formed in the transparent electrode layer region. It leads to the connection electrode layer 63, and further to the outside of the transparent electrode layer region of the element adjacent to the element through the connection hole 68 for series connection formed outside the transparent electrode layer region of the element in the connection electrode layer region. The extended lower electrode layer 64 is reached, and both elements are connected in series.

  3 (a) to 3 (g) show a simplified manufacturing process of the thin film solar cell. Using the plastic film 71 as a substrate (step (a)), a connection hole 78 is formed in this (step (b)), and a first electrode layer (lower electrode) 74 and a third electrode layer (connection electrode) are formed on both sides of the substrate. After (part) 73 is formed (step (c)), a current collecting hole 77 is formed at a position away from the connection hole 78 by a predetermined distance (step (d)). The formation of the first electrode layer 74 and the third electrode layer 73 in the step (c) is performed in two stages by inverting the substrate 71 in a film forming apparatus described later. Both electrode layers 74 and 73 are formed by growing. Thereby, an electrical connection between the two electrode layers is obtained.

  Next, a semiconductor layer 75 to be a photoelectric conversion layer and a transparent electrode layer 76 to be a second electrode layer are sequentially formed on the first electrode layer 74 (step (e) and step (f)), A fourth electrode layer (connection electrode layer) 79 is formed on the three-electrode layer 73 (step (g)). Thereafter, the thin film on both sides of the substrate 71 is separated using a laser beam to form a series connection structure as shown in FIG.

  In the step of FIG. 3, in steps (a), (b) and (d), the substrate is processed in the atmosphere, but the other steps are processed in a vacuum film forming apparatus which will be described later. . Therefore, in the case of the above steps, in the subsequent steps of steps (b) and (d), the substrate is processed in the atmosphere and then introduced into the vacuum container of the vacuum film forming apparatus. In addition, the formation of the first electrode layer 74 and the third electrode layer 73 in the step (c) is performed in two stages by inverting the substrate 71 as described above. Is once taken out into the atmosphere and again introduced into the vacuum vessel.

  As described above, a method for producing a thin film of the thin film solar cell includes a roll-to-roll method or a stepping roll method. Both types are equipped with a substrate transport means by a plurality of rolls, the former is a method of continuously forming a film on a substrate that moves continuously in each film forming chamber, and the latter is stopped simultaneously in each film forming chamber. A method is employed in which a film is formed on a substrate and the substrate portion after film formation is sent to the next film formation chamber.

  The stepping roll type film forming apparatus is excellent in that the characteristics of each thin film can be obtained stably because gas mutual diffusion between adjacent film forming chambers can be prevented. It is described in Document 3 and Patent Document 4.

  FIG. 4 shows an example of a configuration of a vacuum film forming apparatus of a stepping roll film forming system having a plurality of film forming chambers in a common vacuum chamber. The apparatus shown in FIG. 4 includes an unwinder chamber 90 for unwinding a flexible substrate, and a film forming chamber serving as a plurality of independent processing spaces for forming a metal electrode layer, a photoelectric conversion layer, a transparent electrode layer, and the like. 80 and a winding winder chamber 91, and the substrate 92 is configured to be deposited in a plurality of deposition chambers 80 while being rolled out from the core 82 and wound on the core 83. The common chamber 81 houses a plurality of film forming chambers 80 therein.

  In the film formation chamber, film formation is performed by sputtering film formation or plasma chemical vapor deposition (hereinafter referred to as plasma CVD method). For example, in the stepping roll method for forming a film by the plasma CVD method, the film formation chamber is opened, the substrate frame is moved, the film formation chamber is sealed, the raw material gas is introduced, the pressure is controlled, the discharge is started, the discharge is finished, the raw material gas is stopped, the gas is generated. The operation consisting of opening the membrane chamber is repeated.

  FIG. 5 shows an example of a schematic structure of the film forming chamber described in Patent Document 4. 5A and 5B are schematic cross-sectional views when the film forming chamber is opened and sealed, respectively. A box-shaped lower film-forming chamber wall 121 and an upper film-forming chamber wall 122 are arranged opposite to each other on the upper and lower sides of the flexible substrate 100 that is intermittently transferred. An independent processing space comprising a chamber and an upper film forming chamber is configured. In this example, the lower film forming chamber includes a high voltage electrode 131 connected to a power source 140, and the upper film forming chamber includes a ground electrode 132 with a built-in heater 133.

  At the time of film formation, as shown in FIG. 5B, the upper film formation chamber wall 122 is lowered, and the ground electrode 132 holds the substrate 100 and is attached to the opening side end surface of the lower film formation chamber wall 121. Contact the material 141. As a result, an airtightly sealed film formation space 143 communicating with the exhaust pipe 142 is formed from the lower film formation chamber wall 121 and the substrate 100. In the film formation chamber as described above, by applying a high frequency voltage to the high voltage electrode 131, plasma is generated in the film formation space 143, and a source gas introduced from an introduction pipe (not shown) is decomposed on the substrate 100. For example, a photoelectric conversion layer can be formed into a film.

  On the other hand, the roll-to-roll method is excellent in mass productivity because the substrate is continuously moved between rolls provided in the horizontal direction or between the rolls provided in steps in the vertical direction to perform a plurality of film forming operations continuously. ing. The configuration of the apparatus is described in, for example, Patent Literature 5 as a substrate that is continuously moved to rolls provided in steps in the vertical direction.

  FIG. 6 shows a schematic configuration of a roll-to-roll apparatus for continuously moving a substrate between rolls provided in a horizontal direction, with respect to a film forming apparatus by sputtering. A reaction chamber as a vacuum chamber, a vacuum exhaust system, a sputtering gas supply system, and the like are not shown.

  The electrode forming apparatus shown in FIG. 6 is of a type that horizontally transports a film substrate, and a film substrate unwinding roll 151 and a winding roll 152 are also horizontally disposed. In the apparatus shown in FIG. 7, the film substrate 153 is transported between the heater 154 that also serves as a ground electrode and the application electrode 155 that has a target. The film substrate 153 is electrode-formed by sputtering while being heated in a non-contact manner by a heater from the back side.

  In the electrode forming apparatus shown in FIG. 6, an example in which a plurality of (three) targets are provided is shown, but this is an example in which the electrode layer is formed as a laminated film of a plurality of materials. In the case of forming with a single metal such as, one target is sufficient.

  According to the apparatus shown in FIG. 6, it is possible to form an electrode on one side of the film substrate by carrying the film substrate once. When electrode formation is performed on both sides, after the electrode formation on one side is completed, the apparatus is opened to the atmosphere, the film substrate is inverted and set, evacuated again, and then degassed. Then, electrode formation is performed.

  By the way, when transporting such a film substrate, the film substrate is so wide that slack or wrinkles occur during transport. Thus, a method of transporting the film substrate in a vertically placed state is adopted. In this case, the film substrate is transported between the heater also serving as the ground electrode and the application electrode having the target, and electrode formation is performed.

In such a film formation chamber for forming an electrode layer, film formation is performed in a state where the film is evacuated by a vacuum pump and heated to about 300 ° C. by a heater (Patent Document 6). ).
Japanese Patent Laid-Open No. 10-233517 JP 2000-223727 A JP-A-6-292349 JP-A-8-250431 Japanese Patent Publication No. 7-38378 JP 2000-307139 A

The film formation chamber for forming this electrode layer is divided into a plurality of film formation chambers, and the film substrate is conveyed at a constant speed. In each film forming chamber, a heater also serving as a ground electrode and an application electrode having a target are disposed, and electrodes are formed by sputtering while the film substrate is heated to about 300 ° C. by the heater. As an effect of the heater temperature on the film quality of the formed electrode, there is an adhesive force between the film and the electrode on both surfaces of the film substrate. On the side where the power generation layer is formed (also referred to as the back surface), there is a morphology of the electrode surface in order to increase the optical path length.
On the other hand, when the film temperature becomes high, a wrinkle tends to be easily generated when the high-temperature film and the guide roll come into contact with each other in the guide rolls in the intermediate chamber or the winding chamber.
Conventionally, at a film width of 0.5 m and a conveyance speed of 1.0 m / min, the set temperature of each heater is set to 300 ° C., and sufficient adhesion and surface roughness effective for solar cell characteristics are obtained. It was.
However, in order to improve mass productivity, the electrode was formed with a film width of 1.0 m. However, when the length in the width direction is generally increased, there is a tendency that wrinkles are easily generated, and the intermediate chamber and the winding chamber are The problem that conveyance wrinkles generate | occur | produce with a guide roll has generate | occur | produced.
In particular, when the electrode on the power generation layer side (also referred to as the back surface) is provided on one side of the film substrate, the electrode compared to the film surface when forming the electrode on the opposite side (also referred to as the back surface). Since the emissivity of the electrode surface provided with is low, the temperature history of the film is greatly different when forming the back surface compared to when forming the back surface, and the film temperature is difficult to cool. And when the film temperature is high, there is a tendency that conveyance wrinkles are likely to occur due to contact with the guide rolls in the intermediate chamber or the winding chamber.

  An object of the present invention is to solve the above-mentioned problems, and to provide a thin-film solar cell manufacturing apparatus that can prevent conveyance wrinkles due to guide rolls and improve workability.

In order to solve the above problems, the present invention feeds a strip-shaped flexible film substrate wound around an unwinding roll to a plurality of film forming chambers maintained in a substantially vacuum state, and faces the film forming chambers to each other. A metal thin film serving as an electrode was formed on the surface of the film substrate by discharging between the arranged ground electrode and the application electrode having the target material, and the metal thin film was formed. In an apparatus for manufacturing a thin film solar cell in which a film substrate is wound up by a winding roll, an intermediate chamber provided with a guide roll is provided between the plurality of film forming chambers for forming a metal thin film so that the metal thin film can be formed. The temperature of the heating means of the film forming chamber on the downstream side of the intermediate chamber with respect to the temperature of the heating means of the film forming chamber on the upstream side of the intermediate chamber set to a possible temperature until the film substrate reaches the guide roll. Up to the boundary temperature where wrinkles occur It is to set want as low.

According to the first aspect, it is possible to prevent the generation of the conveyance wrinkles generated on the film substrate as the metal thin film is formed. It is possible to prevent the occurrence of conveyance wrinkles generated on the film substrate even when the back surface is formed with electrodes formed on one side .

Hereinafter, the illustrated embodiment will be described in detail with reference to the drawings.
FIG. 1 conceptually illustrates only the basic components for forming a thin-film electrode layer in a solar cell manufacturing apparatus. The reaction chamber, the sputtering gas supply system, the exhaust system, or the film substrate transfer means will be omitted.

In FIG. 1, the thin-film electrode layer forming apparatus is a so-called roll-to-roll method, and includes a feed chamber 3 containing an unwinding roll 2 in which a strip-like flexible film substrate 1 is wound into a roll, and an electrode layer. A winding chamber 5 that houses a winding roll 4 for winding the film substrate 1 on which a metal thin film is formed, and the feeding chamber 3 and the winding chamber 5 are arranged in parallel, and the film substrate 1 is made of metal. A plurality of film forming chambers 6 ₁ , 6 ₂ , 6 ₃ for forming thin films (in the illustrated example, _{three of} the first film forming chamber 6 ₁ , the second film forming chamber 6 ₂ , and the third film forming chamber 6 ₃ ). one of and a deposition chamber. and), the plurality of deposition chambers 6 _1, 6 _2, 6 ₃ of a substantially intermediate position (first film forming chamber ₆₁ and the second film forming chamber 6 ₂ a third between the film forming chamber 6 ₃₎ to be arranged, an intermediate chamber 8 which the guide roll 7 is provided for transporting the film substrate 1 Yes.

The unwinding roll 2 and the winding roll 4 are arranged in the vertical direction and convey the plurality of film forming chambers 6 ₁ , 6 ₂ , 6 ₃ and the intermediate chamber 8 with the film substrate 1 standing up. In the film forming chambers 6 ₁ , 6 ₂ , 6 ₃ , openings (not shown) through which the film substrate 1 passes are formed. The feeding chamber 3 and the winding chamber 5 have a built-in mechanism (not shown) for applying a constant tension to the film substrate 1. The drive mechanism can be performed, for example, by incorporating a motor and a speed reducer in the winding chamber 5 and rotating the winding roll 4 at a constant speed. Further, the feeding chamber 3 may be provided with a mechanism for applying a constant braking so that the film substrate 1 is pulled out while maintaining a constant tension. The feeding chamber 3 and the winding chamber 5 are provided with an auxiliary roll (guide roll) 9 and a driving roll 10, respectively, and controlled so that the conveyance of the film substrate 1 is maintained in an optimum state by the driving roll 10. . The feeding chamber 3 and the winding chamber 5 are controlled by a control mechanism (not shown) so as to maintain a constant speed.

The plurality of film forming chambers 6 ₁ , 6 ₂ , 6 ₃ and the intermediate chamber 8 are connected to a vacuum device (not shown) and are evacuated so as to maintain at least a certain degree of vacuum below atmospheric pressure. The plurality of film forming chambers 6 ₁ , 6 ₂ , and 6 ₃ sandwich the film substrate 1 to be conveyed, respectively, and heaters 11 ₁ , 11 ₂ , 11 ₃ , 11 ₄ , and the like as heating means are placed on one side. 11 _5, 11 ₆ ground electrode 12 ₁ having a built-in, 12 _2, 12 _3, 12 _4, 12 _5, 12 ₆ are arranged, on the other hand, the high voltage electrode 13 ₁ connected to the DC power supply V, 13 ₂ , 13 ₃ , 13 ₄ , 13 ₅ , 13 ₆ are arranged to face each other. The heaters 11 ₁ , 11 ₂ , 11 ₃ , 11 ₄ , 11 ₅ , 11 ₆ are respectively connected to a heater power supply (not shown), and the heaters 11 ₁ , 11 ₂ are set to a temperature of about 300 ° C. The film substrate 1 is heated at a temperature of about 300 ° C., the heaters 11 ₃ and 11 ₄ are set to a temperature of about 200 ° C., and the film substrate 1 is heated at a temperature of about 200 ° C. The heaters 11 ₅ and 11 ₆ are set to a temperature of about 100 ° C. and heat the film substrate 1 at a temperature of about 100 ° C.
Ground electrodes 12 ₁ , 12 ₂ , 12 ₃ , 12 ₄ , 12 ₅ , 12 ₆ and high-voltage electrodes 13 ₁ , 13 ₂ , 13 ₃ , 13 ₄ , 13 _{5 in the} film forming chambers 6 ₁ , 6 ₂ , 6 ₃ , 13 ₆ are connected to a DC power source V, respectively, and ground electrodes 12 ₁ , 12 ₂ , 12 ₃ , 12 ₄ , 12 ₅ , 12 ₆ and high voltage electrodes 13 ₁ , 13 ₂ , 13 ₃ , 13 ₄ , 13 _A high voltage is applied between ₅ and 13 ₆ .
The high voltage electrodes 13 ₁ , 13 ₂ , 13 ₃ , 13 ₄ , 13 ₅ , 13 ₆ are introduced gas by discharge between the ground electrodes 12 ₁ , 12 ₂ , 12 ₃ , 12 ₄ , 12 ₅ , 12 _6. Is ionized, and a metal thin film to be an electrode is formed on the surface of the film substrate 1 by sputtering a target such as silver, aluminum or zinc oxide. The high-voltage electrodes 13 ₁ , 13 ₂ , 13 ₃ , 13 ₄ , 13 ₅ , and 13 ₆ may be attached with a metal serving as an electrode, or may be composed of a metal itself that forms a thin film.

The intermediate chamber 8, and the first film forming chamber ₆₁ and the second film forming chamber 6 _2, is disposed between the third film forming chamber 6 _3, preceding the deposition chamber 6 _1, Guide roll 7 for the film substrate 1 to 6 _second outlet at a distance L conveyed stably is disposed. The guide roll 7 is composed of a plurality of rollers 7 a, 7 b, 7 d (three in the illustrated example), and is conveyed while maintaining tension on the film substrate 1. The roller 7b is supported so as to be movable up to a position 7c, and applies tension to the film substrate 1 by being pressed against the film substrate 1.

The temperature of the film substrate 1 exiting the _first film formation chamber 61 usually reaches 177 ° C., and this temperature is the boundary temperature 170 ° C. at which wrinkles are generated in the _second film formation chamber 62. or to lower to lower temperatures, the first heater 11 _1, 11 ₂ of the temperature second film forming chamber in the 6 ₂ to about 200 which is a heating means about 300 ° C at a deposition chamber 6 ₁ The heaters 11 ₃ and 11 _{4 at} ° C are set to temperatures.
In the third film formation chamber 6 ₃ on the downstream side of the intermediate chamber 8, the heaters 11 ₅ and 11 ₆ are set to temperatures of about 100 ° C.

According to the above embodiment, first, the vacuum apparatus is operated to hold the plurality of film forming chambers 6 ₁ , 6 ₂ , 6 ₃ and the intermediate chamber 8 in a vacuum state. The first film forming chamber 6 ₁ is heated at about 300 ° C. by a ground electrode 12 ₁ incorporating heaters 11 ₁ and 11 _2, and is kept in a high temperature vacuum state to form a metal foil film. And the unwinding roll 2 and the winding roll 4 are rotated by the action | operation of a drive device, and the film board | substrate 1 is conveyed at a film conveyance speed and about 1 m / min. The film substrate 1 pulled out from the supply roll 2 metal foil film is formed while being heated by the heater 11 _3, 11 ₄ Temperature of about 200 ° C in the second film forming chamber 6 _2. After the temperature is lowered in the second film forming chamber 6 ₂ , the film substrate 1 enters the intermediate chamber 8 provided with the guide roll 7, and is maintained in tension by the guide roll 7 while being in the third film forming chamber 6 _3. Sent to. In the third film forming chamber 6 ₃ , a metal foil film is formed while being heated by the heaters 11 ₅ and 11 ₆ set to about 100 ° C.
The film substrate 1 passing through the plurality of film forming chambers 6 ₁ , 6 ₂ , 6 ₃ is composed of ground electrodes 12 ₁ , 12 ₂ , 12 ₃ , 12 ₄ , 12 ₅ , 12 ₆ and high voltage electrodes 13 ₁ , 13 ₂ , 13. ₃ , 13 ₄ , 13 ₅ , and 13 ₆ are passed in a vertical state, and the ground electrodes 12 ₁ , 12 ₂ , 12 ₃ , 12 ₄ , 12 ₅ , 12 ₆ and the high voltage electrode 13 ₁ are passed. , 13 ₂ , 13 ₃ , 13 ₄ , 13 ₅ , 13 ₆ are vacuum-deposited on one surface of the film substrate 1 to form a metal foil film. Then, the film is wound around the winding roll 4 through the plurality of film forming chambers 6 ₁ , 6 ₂ , 6 ₃ and the intermediate chamber 8. Thus, since the film substrate 1 is pulled by the guide roll 7 after the film temperature is lowered, it is possible to prevent the generation of conveyance wrinkles.

  In particular, even when the opposite side (back side) of the film substrate 1 on which the metal foil film has already been formed on one side (back side) is formed, it is possible to prevent the generation of conveyance wrinkles. Thus, the film substrate 1 having the metal foil film formed on both sides proceeds to the next step of forming the semiconductor layer.

According to the above embodiment, the heaters 11 ₃ , 11 ₄ , 11 ₅ , 11 are drawn before being pulled by the guide roll 7 provided in the intermediate chamber 8 and the guide roll 10 provided in the winding chamber 5. _Since the thin film processing is performed while the temperature of ₆ is sequentially lowered, the generation of wrinkles on the film substrate 1 can be prevented. In particular, when forming the film on the opposite surface (back surface) of the film substrate 1 on which the metal foil film has already been formed on one surface (back surface), it is possible to prevent the occurrence of conveyance wrinkles. At the time of film formation on the back side, the temperature of the heaters 11 ₁ and 11 ₂ is set to about 300 ° C., and the temperature of the heaters 11 ₃ , 11 ₄ , 11 ₅ , and 11 ₆ is set to about 100 ° C. Can be suppressed.

The present invention is not limited to the embodiment described above, for example, in the above embodiment, the first film forming chamber _61, the temperature of the heater 11 _1, 11 ₂ to about 300 ° C In the second film formation chamber 6 ₂ , the temperature of the heaters 11 ₃ and 11 ₄ is set to about 200 ° C., and in the third film formation chamber 6 ₃ on the downstream side of the intermediate chamber 8, the heaters 11 ₅ and 11 are set. _{6 Although the} temperature was set to about 100 ° C., the heater temperature can be arbitrarily set as long as the heater temperature is lowered stepwise from the upstream side toward the downstream side, and transported by the guide rolls 7 and 10. Generation of wrinkles can be prevented.

  Furthermore, in the said embodiment, although applied to the formation apparatus of the thin film electrode layer which forms a metal foil film on one side, it can also be applied to the formation apparatus of the thin film electrode layer which forms a metal foil film on both surfaces. In addition, it can be applied to a thin film electrode layer forming apparatus that transports the film substrate 1 in a horizontal state, and other modifications can be made without departing from the scope of the present invention. Absent.

It is a block diagram which shows the formation apparatus of the thin film electrode layer by embodiment of the manufacturing apparatus of the thin film solar cell of this invention. It is a perspective view which shows the structure conceptual diagram of the conventional thin film solar cell. The simplified manufacturing process of the conventional thin film solar cell is shown, (a)-(g) is a conceptual sectional view showing each process. It is a conceptual sectional view showing a configuration of a conventional stepping roll film forming type vacuum film forming apparatus. An example of a schematic structure of a conventional film forming chamber is shown, and (a) and (b) are schematic cross-sectional views when the film forming chamber is opened and sealed, respectively. It is a conceptual diagram which shows the film-forming apparatus by the conventional sputtering.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film substrate 2 Unwinding roll 3 Feeding chamber 4 Winding roll 5 Winding chamber 6 ₁ , 6 ₂ , 6 ₃ Film forming chamber 7 Guide roll 8 Intermediate chamber 9 Auxiliary roll (guide roll)
10 Driving rolls 11 ₁ , 11 ₂ , 11 ₃ , 11 ₄ , 11 ₅ , 11 ₆ heater (heating means)
12 ₁ , 12 ₂ , 12 ₃ , 12 ₄ , 12 ₅ , 12 ₆ ground electrodes 13 ₁ , 13 ₂ , 13 ₃ , 13 ₄ , 13 ₅ , 13 ₆ high voltage electrodes

Claims (1)

A strip-shaped flexible film substrate wound around an unwinding roll is sent to a plurality of film forming chambers maintained in a substantially vacuum state, and has a ground electrode and a target material arranged opposite to each other in the film forming chamber. It is discharged between the applied electrodes, and a metal thin film to be an electrode is formed on the surface of the film substrate under set heating, and the film substrate on which the metal thin film is formed is wound up by a winding roll In the thin film solar cell manufacturing apparatus, an intermediate chamber having a guide roll is provided between the plurality of film forming chambers for forming the metal thin film, and the intermediate chamber upstream set to a temperature at which the metal thin film can be formed. The temperature of the heating means in the film forming chamber on the downstream side of the intermediate chamber is set to be lower than the temperature of the heating means in the film forming chamber on the side so that the temperature is lowered to the boundary temperature at which wrinkles are generated before the film substrate reaches the guide roll. and characterized in that it That thin-film solar cell manufacturing equipment.

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