JP5094019B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a manufacturing method thereof. Specifically, the present invention relates to a semiconductor device having a circuit composed of a field effect transistor (hereinafter referred to as FET). For example, parts include large-scale integrated circuits (LSIs), electro-optical devices represented by liquid crystal display panels, light-emitting display devices having organic light-emitting elements, sensor devices such as line sensors, and memory devices such as SRAM and DRAM. It is related with the electronic equipment carried as.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, when a multilayer wiring is formed on a semiconductor element, by stacking the wiring, a step is increased as the upper layer is formed, and it is difficult to process the wiring. Therefore, generally, a wiring material is embedded in a wiring opening such as a wiring groove or hole formed in an insulating film by a wiring forming technique called a damascene method.

  The damascene method is to form a metal wiring by first forming a groove in the insulating film, applying a metal material to the entire surface, and then polishing the entire surface by a CMP (Chemical Mechanical Polishing) method or the like. is there. At this time, a method including forming a hole for making contact with a lower metal wiring or a semiconductor region below the metal wiring is called a dual damascene method. The dual damascene method includes a step of forming a connection hole and a wiring groove with a lower layer wiring, depositing a wiring material, and removing a wiring material other than the wiring portion by a CMP method.

For metal wiring using the dual damascene method, copper (Cu) by electrolytic plating is often used. In the electrolytic plating method, since copper (Cu) is completely embedded in the connection hole, it is necessary to adjust the plating solution and the applied electric field in a complicated manner. Further, it is difficult to process copper (Cu) by an etching process using an etchant or an etching gas, and a special CMP method for polishing is required for processing copper (Cu).

The electrolytic plating method and the CMP method have a problem in that the number of steps for forming the wiring is increased and the manufacturing cost is increased.

  In addition, not only in a semiconductor device manufacturing process using a semiconductor substrate but also in an active matrix substrate manufacturing process using a thin film transistor (TFT), it is difficult to process the wiring when forming a multilayer wiring. In recent years, thin film transistors have been widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices has been urgently required. As an image display device, a liquid crystal display device is generally well known.

Active matrix liquid crystal display devices are often used because high-definition images can be obtained compared to passive liquid crystal display devices. In an active matrix liquid crystal display device, a display pattern is formed on a screen by driving pixel electrodes arranged in a matrix. Specifically, by applying a voltage between the selected pixel electrode and the counter electrode corresponding to the pixel electrode, optical modulation of the liquid crystal layer disposed between the pixel electrode and the counter electrode is performed. The optical modulation is recognized by the observer as a display pattern.

  Applications of such an active matrix type electro-optical device are expanding, and the demand for improvement in productivity and cost reduction is increasing as the screen size increases.

  Conventionally, when forming a multilayer wiring, in order to connect the upper layer wiring and the lower layer wiring, a contact hole is formed in the interlayer insulating film provided between these wirings by photolithography. When a contact hole is formed using a photolithography method, many steps such as formation of a resist mask (resist application, exposure, development), selective etching, and resist mask removal are required. In other words, in order to make a plurality of wirings have a multi-layer structure so as to cross three-dimensionally, it is necessary to open a contact hole, which is one of the causes of an increase in the number of manufacturing processes.

  In addition, when a photolithography method is used, since a photomask is required for each exposure pattern, the cost for manufacturing the photomask is high, which is one of the causes of an increase in manufacturing cost.

  In the case of using the photolithography method, a large amount of resist material and a large amount of developer are used for improving uniformity, and the consumption of extra material is large.

  Also, dry etching and wet etching are known as methods for selectively etching the interlayer insulating film. In general, dry etching using gas plasma is advantageous for pattern formation such as taper processing, but the dry etching apparatus has a drawback that an expensive and large-scale apparatus is required and the manufacturing cost is high. Further, there is a possibility that damage due to gas plasma is given to the semiconductor element. Therefore, it is desirable to perform dry etching as little as possible.

In addition, wet etching, which is inexpensive and excellent in mass productivity as compared with dry etching, uses a large amount of etchant in a single use, and thus waste liquid treatment is difficult, which is one of the causes of increased manufacturing costs. In addition, since wet etching is isotropic etching, it is difficult to form a contact hole having a relatively small diameter, which is unsuitable for high integration of circuits.

  Further, as a method that does not use a photoresist in patterning a thin film, a laser processing technique is known, and among them, a laser processing method using YAG laser light (wavelength 1.06 μm) is known. In the laser processing method using YAG laser light, a workpiece is irradiated with a spot-like beam and the beam is scanned in the processing direction to form grooves in a continuous chain of dots.

In addition, the present applicant has disclosed a thin film processing method for forming a groove by irradiating a light-transmitting conductive film with a linear beam using a laser beam having a wavelength of 400 μm or less. And Patent Document 3.
US Pat. No. 4,861,964 US Pat. No. 5,708,252 US Pat. No. 6,149,998

  An object of the present invention is to simplify a process required for processing a wiring when forming a multilayer wiring. It is another object of the present invention to provide a technique for realizing high integration of circuits.

  In addition, when a plurality of contact holes having different depths are formed, the process tends to be complicated. Therefore, the present invention provides a technique capable of realizing a plurality of contact holes having different depths by a simple process.

  In addition, in the manufacture of electronic devices having semiconductor circuits, in order to efficiently perform mass production, a mother glass substrate is used instead of a wafer substrate, and multiple chamfering that cuts out a plurality of devices from a single mother glass substrate is often performed. Yes. The size of the mother glass substrate was increased from 300 x 400 mm of the first generation in early 1990 to the fourth generation in 2000 and increased to 680 x 880 mm or 730 x 920 mm. Typically, production technology has advanced so that a large number of display panels can be produced.

If the substrate becomes larger in the future, it is considered disadvantageous for mass production because the deposition method using the sputtering method becomes expensive as the target becomes larger in size when forming a metal film to be a wiring. It is done.

Another object of the present invention is to provide a wiring formation technique suitable for a large substrate in mass production.

  The present invention is characterized in that a light-transmitting insulating film formed so as to cover a conductive layer is selectively irradiated with laser light to form a penetrating opening reaching the conductive layer. By forming an opening penetrating the light-transmitting insulating film with laser light, the contact hole forming step can be simplified.

  In addition, when the practitioner appropriately sets the focal position of the laser beam, the depth of the penetrating opening and the size of the penetrating opening can be determined as appropriate. Therefore, according to the present invention, a plurality of contact holes having different depths can be realized by a simple process. Further, the insulating film having a light-transmitting property is not limited to a single layer, and the contact hole forming process can be simplified even if the insulating film has a stacked structure of two or more layers.

  The laser light used in the present invention remains as a fundamental wave without passing through a nonlinear optical element, and a laser beam having a high intensity and a high repetition frequency is irradiated on a light-transmitting insulating film to penetrate the opening. Form. One feature of the present invention is that the repetition frequency of the laser used in the present invention is 10 MHz or more.

High intensity means having a high peak output per unit area per unit time, and the range of the peak output of laser light in the present invention is 1 GW / cm ^{2 to 1} TW / cm ² . .

A fundamental wave having a wavelength of about 1 μm is not absorbed much even when irradiated to a light-transmitting insulating film, and the absorption efficiency is low, but the pulse width is in the picosecond range or the femtosecond range ( ^10-15 seconds). If the fundamental wave is emitted from a pulsed laser, high-intensity laser light is obtained, a nonlinear optical effect (multiphoton absorption) occurs, and the light-transmitting insulating film absorbs it to form a through-hole. Can do.

  In addition, when the practitioner appropriately sets the focal position of the laser beam, the opening shape in the plane perpendicular to the substrate can also be determined as appropriate. For example, an opening whose opening area on the surface of the light-transmitting insulating film is smaller than the exposed area of the conductive layer can be formed.

In the conventional processing method using YAG laser light, since the beam shape is circular and the light intensity exhibits a Gaussian distribution, the opening shape in a plane perpendicular to the surface of the workpiece has a shape according to the Gaussian distribution. Therefore, in the conventional processing method using YAG laser light, it is difficult to form a contact hole having a very small opening diameter and a deep depth, because the opening diameter on the surface tends to increase. The pulse width used in the conventional processing method using YAG laser light is 10 ⁻⁴ seconds to 10 ⁻² seconds.

Further, the conventional processing method of irradiating a light-transmitting conductive film with a laser beam having a wavelength of 400 μm or less to form an open groove absorbs the laser beam having a wavelength of 400 μm or less. Since the translucent conductive film is used, an open groove is formed from the surface of the translucent conductive film. Also in this processing method, energy is easily absorbed on the surface, and the opening diameter on the surface is likely to widen.

  Compared to the conventional processing method, the processing method of the present invention is not limited to forming an opening penetrating from the surface, and various forming methods are possible. For example, when a laser beam is irradiated onto a light-transmitting insulating film while moving the focal position of the laser light from the conductive layer side to the surface, the light-transmitting insulating film is directed from the conductive layer side to the surface. An opening penetrating therethrough is formed. Alternatively, an opening can be formed in the insulating film by passing the substrate from the back surface, that is, the light-transmitting substrate side and irradiating the substrate with laser light.

  In addition, the present invention freely moves the focal position of the laser beam, for example, to form an opening penetrating in the vertical direction in the Z direction (depth direction), and then forming a horizontal hole in the X direction or the Y direction. It is also possible to form an opening having a complicated shape.

Furthermore, the present invention uses a printing technique such as a droplet discharge technique typified by a piezo method or a thermal jet method, or a nanoimprint technique, to form a wiring or an electrode at a position overlapping with the opening of the insulating film. One of the features is that it is electrically connected to the conductive layer through the opening.

  For example, in the case of using a droplet discharge technique, the liquid material can be made fluid by adjusting the material liquid, so that the conductive material is filled even in the case of an opening having a complicated shape. Can do. For example, a conductive material can be filled into a hole whose side wall has an inversely tapered shape. In addition, a conductive material can be filled into a deep opening or a complicated opening using the speed of a conductive material dropped using a droplet discharge technique. It is also an aspect of the present invention to provide an opening having a shape that can be easily filled with a conductive material having fluidity.

  In the case of using a printing technique such as a nanoimprint technique, the conductive material can be filled with a conductive material by imparting fluidity to the conductive material during heat treatment for firing.

  In addition, when wiring is formed using a droplet discharge technique or nanoimprint technique in a contact hole having a relatively large diameter, for example, larger than 2 μm in diameter, the wiring conforms to the shape of the contact hole. It was easy to become a shape dented from other places. 19A to 19C show the conventional contact hole formation. A base insulating film 3011 is provided over the substrate 3010, and a conductive layer 3012 is provided thereover. In FIG. 19A, an insulating film 3013 is formed over the conductive layer 3012, a resist mask 3014 is formed by a photolithography technique, and an opening 3016 is formed by etching. Then, when the resist mask 3014 is removed and wiring is formed using a droplet discharge technique or a nanoimprint technique, a wiring 3017a as shown in FIG. 19B is formed. As shown in FIG. 19B, the wiring 3017a is a wiring along the shape of the contact hole, and the wiring portion of the contact hole is recessed from other portions. Further, when fired, the wiring material has fluidity, so that the shape is deformed as shown in FIG. Accordingly, the material moves in the moving direction 3018 of the material indicated by the arrow in FIG. 19C, and there is a possibility that the thickness of the wiring near the contact hole becomes thinner than other portions. In the droplet discharge technique, when a material having low viscosity and fluidity is used, the wiring material is likely to move to a low place before firing, that is, immediately after the wiring is formed.

  Therefore, the present invention does not form a single opening having a large contact area, but provides a plurality of openings having a minute contact area with a diameter of 2 μm or less, preferably about 3 to 200 nm, and is partially recessed. One of the features is that the thickness of the wiring is made uniform and the contact resistance is secured.

In the structure of the invention disclosed in this specification, as shown in FIG. 1C, for example, the first conductive layer has a plurality of through openings and covers the first conductive layer. An insulating film; and a second conductive layer in contact with the first conductive layer through the plurality of through openings, wherein the second conductive layer includes conductive particles, and the plurality of through holes In the semiconductor device, the surface of the second conductive layer that overlaps the opened opening and the surface of the second conductive layer that does not overlap the plurality of through-openings are formed on the same plane. Note that the width W of the second conductive layer and the diameter D of one through opening satisfy 2D <W. Since the diameter of one through opening can be reduced with respect to the width W of the second conductive layer, the width of the second conductive layer can be made constant, and the wiring layout can be simplified. . Conventionally, a margin is often provided so that patterning misalignment may occur by partially widening the width of a conductive layer in a region where a contact hole is formed. In addition, by reducing the diameter of the opening with respect to the wiring width so that the diameter D of one penetrating opening satisfies 2D <W, even if there is a slight deviation in the formation position of the opening position, it is ensured that Connection can be made.

  In the above structure, the second conductive layer includes a plurality of crystals in which conductive particles are aggregated, and the crystals overlap with each other. When a conductive material containing metal particles of 3 to 7 nm is formed by a droplet discharge method or a printing method and baked, the metal particles melt and aggregate to form a crystal of about 100 nm. Formed by overlapping rules.

In the present invention, one feature is that the diameter of the through-opening is larger than one of the conductive particles. The opening is larger than the diameter of the metal particle (3 to 7 nm) so that at least the metal particle to be used enters the opening on the surface. Specifically, the diameter of the through-opening of the present invention is 3 to 2000 nm.

In addition, the present invention is not limited to the opening that is in contact with the lower conductive layer, and the structure of another invention includes a semiconductor layer, an insulating film that has a plurality of through openings and covers the semiconductor layer, A conductive layer in contact with the semiconductor layer through a plurality of through openings, the conductive layer including conductive particles, the surface of the conductive layer overlapping the plurality of through openings, and the plurality of through holes The semiconductor device is characterized in that the opening and the surface of the conductive layer which does not overlap are formed on the same plane.

Moreover, in this invention, the shape of the opening penetrated is not limited to the column shape which has the same diameter, The diameter of the cross section cut | disconnected by the horizontal surface may differ for every part. For example, the opening diameter on the lower surface of the insulating film may be 10 times or more than the opening diameter on the upper surface of the insulating film, and the opening diameter on the upper surface of the insulating film may be larger than that of the metal particles. Moreover, the cross section cut | disconnected by the horizontal surface of the opening penetrated is not limited to a circle, An ellipse or a rectangle may be sufficient. When the cross-sectional shape cut by the horizontal plane of the opening that penetrates is an ellipse, the length of the minor axis may be in the range of 3 to 2000 nm. Moreover, when the cross-sectional shape cut | disconnected by the horizontal surface of the opening penetrated is a rectangle, the length of a short side should just be the range of 3-2000 nm.

In order to reduce the electrical resistance, the opening diameter on the lower surface of the insulating film may be the same as or slightly larger than that of one crystal so that a crystal composed of a collection of metal particles is formed in the opening.

Since the opening shape of the present invention is formed by a laser beam, it can be a complicated shape. The structure of another invention has a first conductive layer, a plurality of through openings, and the first shape. An insulating film covering the conductive layer, and a second conductive layer in contact with the first conductive layer through the plurality of through openings, and the second conductive layer includes conductive particles. The semiconductor device is characterized in that at least two of the plurality of through openings are connected to each other in the insulating film.

Further, the opening shape of the present invention is not limited to the columnar shape extending in the film thickness direction (that is, the Z direction), and the structure of another invention has a first conductive layer and a plurality of through openings, and An insulating film covering the first conductive layer; and a second conductive layer in contact with the first conductive layer through the plurality of penetrating openings, wherein the second conductive layer includes conductive particles The cross-sectional shape of the plurality of through-openings is an L-shape, a U-shape, or a shape depicting an arc.

Further, in the present invention, the penetrating opening indicates a passage continuing to the upper and lower layers sandwiching the insulating film and a passage extending in the horizontal direction in the insulating film. For example, the cross-sectional shape of the through-opening of the present invention may be an L shape, a U shape (an example is shown in FIG. 7D), or an arc shape (an example is shown in FIG. 5B). included. Even if the opening has such a complicated cross-sectional shape, the conductive material can be filled into the opening having a complicated shape by adjusting the viscosity of the material to be discharged by the droplet discharge method.

  For example, in the present invention, a plurality of minute openings can be connected at the contact surface with the conductive layer. In this way, a plurality of minute openings are provided on the upper surface of the insulating film, and the plurality of openings are connected by lateral holes (holes extending in the X direction or the Y direction) provided near the lower surface of the insulating film. The contact area can be increased. Further, by connecting a plurality of vertical holes (holes extending in the Z direction) with horizontal holes (holes extending in the X direction or the Y direction) along the lower surface of the insulating film, an air escape path can be provided at the time of droplet discharge. It is possible to prevent bubbles from remaining in the openings.

In each of the above structures, the semiconductor device includes at least one of an antenna, a CPU, and a memory. For example, according to the present invention, it is possible to realize high integration of an integrated circuit having a multilayer wiring formed through a through opening. Specifically, according to the present invention, an integrated circuit having an antenna and a memory for identifying and managing an article, product, or person, typically a wireless chip (ID tag, IC tag, IC chip, RF (Radio) Frequency) tag, wireless tag, electronic tag, and RFID (Radio Frequency Identification))) can be completed.

In each of the above structures, the semiconductor device is a display device (LCD panel or EL panel), a video camera, a digital camera, a personal computer, or a portable information terminal. For example, according to the present invention, an integrated circuit having a multilayer wiring formed through a through-opening can be manufactured by a simple process, and an electronic device including the integrated circuit can be completed.

  The structure of the present invention relating to a manufacturing method for realizing each of the above structures includes a step of forming a first conductive layer, a step of forming an insulating film on the first conductive layer, A step of selectively irradiating laser light to form a plurality of penetrating openings in the insulating film, and the first conductive layer through the plurality of penetrating openings by a droplet discharge method or a printing method. Forming a second conductive layer that is in contact with the semiconductor device.

  Further, in the configuration related to the manufacturing method, the step of forming the second conductive layer includes a second conductive layer that overlaps the plurality of through openings and a second surface that does not overlap the plurality of through openings. One of the characteristics is that the heat treatment is performed so that the surface of the conductive layer is flush with the surface.

  Further, another structure of the present invention relating to a manufacturing method includes a step of forming a first conductive layer, a step of forming an insulating film on the first conductive layer, and a laser selectively with respect to the insulating film. Irradiating light to form a plurality of through openings having different depths in the insulating film, and forming a second conductive layer filling the plurality of through openings by a droplet discharge method or a printing method And a method for manufacturing a semiconductor device.

  Further, another structure of the present invention relating to a manufacturing method includes a step of forming a first conductive layer, a step of forming an insulating film on the first conductive layer, and a laser selectively with respect to the insulating film. Irradiating light to form a plurality of through-openings having different depths in the insulating film, and discharging a liquid material having conductive particles to the plurality of through-openings by a droplet discharge method, And forming a second conductive layer by filling a plurality of through openings with conductive particles.

  In each of the structures related to the manufacturing method, the plurality of through openings are formed by moving the focal point of laser light in the X direction, the Y direction, or the Z direction.

Since the focal point of the laser beam is moved, various openings can be formed. In each configuration related to the manufacturing method, the cross-sectional shape of the plurality of through-openings is a columnar shape, an L shape, a U shape, Another feature is that the shape is an arc.

  In addition, a closed hole (hole extending in the Z direction) is formed in advance in the light-transmitting insulating film by laser light, and a through-hole is formed by removing the surface layer later by etching or polishing. May be.

Another structure of the present invention relating to a manufacturing method includes a step of forming a first conductive layer, a step of forming an insulating film on the first conductive layer, and selectively emitting laser light to the insulating film. Irradiating the insulating film in contact with the first conductive layer and forming a closed hole; and performing the thinning process on the insulating film, and simultaneously opening the closed hole And a step of forming a second conductive layer in contact with the first conductive layer through the plurality of penetrating openings by a droplet discharge method or a printing method. This is a manufacturing method.

  Moreover, in each structure regarding the said manufacturing method, it is one of the characteristics that the diameter of the said through-opening is 3-2000 nm.

In addition, a method for manufacturing a semiconductor device including a transistor using a semiconductor substrate is also one aspect of the present invention.
The structure is a method for manufacturing a semiconductor device having a transistor, a step of forming a first insulating film on a semiconductor substrate, a step of forming a second insulating film on the first insulating film, and a selection Irradiating laser light to form a first penetrating opening reaching the first insulating film and a second penetrating opening reaching the semiconductor substrate in the second insulating film; Forming a gate electrode in contact with the first insulating film through the first penetrating opening and an electrode in contact with the semiconductor substrate through the second penetrating opening by a droplet discharge method; A method for manufacturing a semiconductor device.

A method for manufacturing a top-gate thin film transistor (TFT) formed over a substrate having an insulating surface is also one embodiment of the present invention. The structure is a method for manufacturing a semiconductor device having a thin film transistor,
A step of forming a semiconductor layer over a substrate having an insulating surface, a step of forming a first insulating film covering the semiconductor layer, a step of forming a second insulating film, and selectively irradiating laser light. Forming a first penetrating opening reaching the first insulating film and a second penetrating opening reaching the semiconductor layer in the second insulating film, and forming the first penetrating layer by a droplet discharge method. Forming a gate electrode that is in contact with the first insulating film through a through-opening of the first electrode and an electrode that is in contact with the semiconductor layer through the second through-opening. A method for manufacturing a semiconductor device.

  The first insulating film is a gate insulating film. The second insulating film is an interlayer insulating film.

A method for manufacturing a bottom-gate thin film transistor (TFT) formed over a substrate having an insulating surface is also one embodiment of the present invention. The structure is a method for manufacturing a semiconductor device having a thin film transistor,
Forming a first insulating film on a substrate having an insulating surface; forming a semiconductor layer on the first insulating film; and forming a second insulating film above the semiconductor layer; , Selectively irradiating a laser beam to the first insulating film and the second insulating film through the first through hole, and the second insulating film reaching the semiconductor layer through the second through hole. And forming a gate electrode through the first penetrating opening and an electrode in contact with the semiconductor layer through the second penetrating opening by a droplet discharge method. A part of the first penetrating opening is formed below the semiconductor layer, and the first insulating film located between the first penetrating opening and the semiconductor layer is a gate insulating film. This is a method for manufacturing a semiconductor device.

In the structure related to the manufacturing method, the first through opening is formed by laser light irradiation from a substrate side having an insulating surface or laser light irradiation from the second insulating film side. It is one.

In the structure related to the manufacturing method, the second insulating film is an interlayer insulating film.

In the structure related to the manufacturing method, the first through opening is characterized in that an opening in the Z direction is connected to an opening in the X direction or the Y direction. The manufacturing method of the present invention is characterized in that after the second insulating film is formed first, an opening like a tunnel is formed with laser light, and the opening is filled with a conductive material to form a gate electrode. It is. Since the position of the gate electrode in the depth direction can be freely set by laser light, the gate insulating film can be thinned. In addition, the gate electrode can be formed without damaging the gate insulating film.

  In the structure related to the manufacturing method, one of the features is that the diameter of the first through-opening is 3 to 2000 nm.

  Further, in each of the structures related to the manufacturing method, one of the characteristics is that the pulse width of the laser light oscillates in a range from 1 femtosecond to 10 picoseconds. By setting the pulse width in the range of 1 femtosecond or more and 10 picoseconds or less, high intensity sufficient to cause multiphoton absorption can be obtained. Multiphoton absorption does not occur in a laser beam having a pulse width of several tens of picoseconds longer than 10 picoseconds. Further, the laser light is one of the characteristics that is a fundamental wave emitted from a laser oscillator having a laser repetition frequency of 10 MHz or more.

In the present invention, the semiconductor layer can be a semiconductor film containing silicon as a main component, a semiconductor film containing an organic material as a main component, or a semiconductor film containing a metal oxide as a main component. As the semiconductor film containing silicon as its main component, an amorphous semiconductor film, a semiconductor film including a crystal structure, a compound semiconductor film including an amorphous structure, or the like can be used. Specifically, amorphous silicon or microcrystalline silicon can be used. Polycrystalline silicon, single crystal silicon, or the like can be used. In addition, as a semiconductor film containing an organic material as a main component, a semiconductor film (room temperature (20 ° C.) containing a substance composed of a certain amount of carbon or an allotrope of carbon (except diamond) in combination with other elements as a main component. A material having a charge carrier mobility of at least 10 ⁻³ cm ² / V · s, for example, a π-electron conjugated aromatic compound, a chain compound, an organic pigment, an organic silicon compound, or the like can be used. Specific examples include pentacene, tetracene, thiophen oligomer derivatives, phenylene derivatives, phthalocyanine compounds, polyacetylene derivatives, polythiophene derivatives, and cyanine dyes. As the semiconductor film containing a metal oxide as its main component, zinc oxide (ZnO), an oxide of zinc, gallium, and indium (In—Ga—Zn—O), or the like can be used.

  In the semiconductor device of the present invention, a protection circuit (such as a protection diode) for preventing electrostatic breakdown may be provided.

  Further, the present invention can be applied regardless of the TFT structure or the transistor structure. For example, a top gate type TFT, a bottom gate type (reverse stagger type) TFT, or a forward stagger type TFT can be used. is there. Further, the invention is not limited to a single-gate transistor, and may be a multi-gate transistor having a plurality of channel formation regions, for example, a double-gate transistor.

  According to the present invention, it is possible to simplify a process required for processing a wiring when forming a multilayer wiring. Furthermore, high integration of the circuit can be realized.

  In addition, according to the present invention, a plurality of contact holes having different depths can be realized by a simple process.

  In addition, since the fundamental wave having a wavelength of about 1 μm is used in the present invention, the contact hole can be formed with almost no damage to the element or the substrate because it is hardly absorbed by the element or the substrate. Therefore, a semiconductor device can be manufactured using an element that is sensitive to heat or an etching solution or a film substrate that is weak against heat or an etching solution.

  Embodiments of the present invention will be described below. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.

(Embodiment 1)
In this embodiment mode, a method for forming a contact hole in the first conductive layer and a method for forming a second conductive layer electrically connected to the first conductive layer through the contact hole are illustrated in FIGS. This will be described with reference to FIGS. 10 and 11.

  First, the base insulating film 11 is formed over the substrate 10 having an insulating surface, and the first conductive layer 12 is formed thereon. Next, an insulating film 13 that covers the first conductive layer 12 is formed. A cross-sectional view at this stage is illustrated in FIG.

Note that a light-transmitting glass substrate or quartz substrate may be used as the substrate 10 having an insulating surface.

As the base insulating film 11, a base film made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed. Here, an example in which a two-layer structure is used as the base film is shown; however, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. Note that the base insulating film is not necessarily formed.

  The first conductive layer 12 is patterned using a photolithography technique after a conductive film having a thickness of 100 to 600 nm is formed by a sputtering method. Note that the conductive film is formed using an element selected from Ta, W, Ti, Mo, Al, Cu, and Si, or a single layer of an alloy material or a compound material containing the element as a main component, or a stacked layer thereof. Here, an example in which the first conductive layer is formed using a photolithography technique is shown; however, there is no particular limitation, and the first conductive layer 12 is formed by a droplet discharge method, a printing method, or an electroless plating method. Also good. The first conductive layer 12 is preferably made of a material that reflects and hardly absorbs laser light used in the subsequent opening process.

  The first conductive layer 12 may use a transparent conductive material such as ITO, IZO, ITSO. It is preferable to use a material that transmits and hardly absorbs laser light used in the subsequent opening step.

  As the insulating film 13, an insulating material that transmits and hardly absorbs laser light used in the subsequent opening process, for example, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used. Further, as the insulating film 13, an insulating film having a skeleton structure formed by a bond of silicon (Si) and oxygen (O) obtained by a coating method may be used. Further, as the insulating film 13, PSG (phosphorus silicate glass) in which phosphorus is added to silicon dioxide, BPSG (boron phosphorus silicate glass) in which phosphorus and boron are added to silicon dioxide, SiOF in which fluorine is added to silicon dioxide, polyimide, An aromatic ether typified by polyallyl ether or polyfluoro aliether to which fluorine is added, an aromatic hydrocarbon, a cyclobutane derivative typified by BCB (Benzocyclobutene), or the like can also be used.

  In FIG. 1A, the insulating film 13 is a flat insulating film, but is not particularly limited, and may be an inorganic insulating film obtained by a CVD method or a sputtering method. Even if the insulating film 13 is not flat, the present invention can form a plurality of openings using laser light.

In this embodiment mode, the insulating film 13 is formed by applying or discharging a material by a coating method or a droplet discharge method, followed by drying and baking.

Next, as shown in FIG. 1B, a plurality of openings 16 penetrating through the insulating film 13 by irradiating with laser light are formed. Here, laser light emitted from an ultrashort optical pulse laser is used as the laser light. By focusing an ultrashort optical pulse laser on a material having translucency, multiphoton absorption is caused only at the focal point where the ultrashort optical pulse laser is focused and closed. A hole can be formed and the condensing point can be moved to form a single opening. When the pulse width of the laser light is 10 ⁻⁴ seconds to 10 ⁻² seconds, it is not absorbed by the insulating film 13, but multiphoton absorption is achieved by irradiating laser light with a very short pulse width (picosecond range or femtosecond). It can be generated and absorbed by the insulating film 13. A method for manufacturing an opening using an ultrashort light pulse laser will be described with reference to FIGS.

The ultrashort optical pulse laser oscillator 101 uses a laser oscillator that oscillates in a femtosecond ( ^10-15 seconds) pulse width. As the ultrashort optical pulse laser oscillator 101, sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW (potassium gadolinium tungsten), Mg ₂ SiO ₄ , YLF, YVO ₄ , GdVO Examples include a laser in which a dopant such as Nd, Yb, Cr, Ti, Ho, Er is added to a crystal such as ₄ . After the laser beam emitted from the ultrashort pulse laser oscillator 101 is reflected by the mirror 102, the laser beam is condensed in the sample 104, here the insulating film 13 provided on the substrate, by the objective lens 103 having a high numerical aperture. (See FIG. 2A.) As a result, holes can be formed in the insulating film in the vicinity of the condensing point. In addition, a desired opening is formed in the insulating film 13 by moving the condensing point using the XYZ stage 105. FIG. 2B is a cross-sectional view illustrating the middle of opening formation. In FIG. 2B, an opening that does not penetrate is shown as a hole 17.

Note that the ultrashort optical pulse laser in this specification refers to a laser beam oscillated from a solid-state laser with a pulse width of 1 femtosecond or more and 10 picoseconds or less. The range of peak output of laser light in the present invention ^is directed to ^{1GW / cm 2 ~1TW / cm 2} .

With an ultrashort optical pulse laser, processing is possible only at the center of the beam with a high energy density, so it is difficult to process with a normal laser below the laser wavelength. However, by using an ultrashort optical pulse laser, fine processing, Processing below the laser wavelength is possible.

The material used for the insulating film 13 is a material that is transparent to light having the wavelength of the ultrashort optical pulse laser, that is, a material that does not absorb light having the wavelength of the ultrashort optical pulse laser. It is necessary to use a material having an energy gap larger than the wavelength of the laser. By focusing an ultrashort optical pulse laser inside a light-transmitting material, multiphoton absorption is caused only at the focal point where the ultrashort optical pulse laser is focused to form a hole. I can do it. Multiphoton absorption means that a plurality of photons are simultaneously absorbed and transition to an eigenstate corresponding to the sum of photon energies. By this transition, light in a wavelength region that is not absorbed can be absorbed, and a hole can be formed at a condensing point where the light energy density is sufficiently high. The term “simultaneously” here means two events that occur within a time period of 10 ⁻¹⁴ seconds or less.

  Here, a laser beam direct writing apparatus will be described with reference to FIG. As shown in FIG. 10, a laser beam drawing apparatus 1001 includes a personal computer 1002 (hereinafter referred to as PC) that executes various controls when irradiating a laser beam, a laser oscillator 1003 that outputs a laser beam, and a laser. A power source 1004 of the oscillator 1003, an optical system 1005 (ND filter) for attenuating the laser beam, an acousto-optic modulator 1006 (AOM) for modulating the intensity of the laser beam, and an enlargement or reduction of the cross section of the laser beam An optical system 1007 composed of a lens for changing the optical path, a mirror for changing the optical path, etc., a substrate moving mechanism 1009 having an X stage and a Y stage, and D / D for digital-to-analog conversion of control data output from the PC A converter 1010 and the sound according to the analog voltage output from the D / A converter It includes a driver 1011 for controlling the academic modulator 1006, a driver 1012 for outputting a driving signal for driving the substrate moving mechanism 1009.

As the laser oscillator 1003, a laser oscillator that oscillates in the femtosecond ( ^10-15 seconds) range is used.

Next, a laser beam irradiation method using a laser beam direct drawing apparatus will be described. When the substrate 1008 is mounted on the substrate moving mechanism 1009, the PC 1002 detects the position of the marker attached to the substrate by a camera (not shown). Next, the PC 1002 generates movement data for moving the substrate movement mechanism 1009 based on the detected marker position data and drawing pattern data input in advance. Thereafter, the PC 1002 controls the output light amount of the acousto-optic modulator 1006 via the driver 1011, whereby the laser beam output from the laser oscillator 1003 is attenuated by the optical system 1005, and then the acousto-optic modulator 1006. The light amount is controlled so as to be a predetermined light amount.

On the other hand, the laser beam output from the acousto-optic modulator 1006 is changed in optical path and beam shape by the optical system 1007, condensed by the lens, and then irradiated to the insulating film on the substrate to form a hole. To do. At this time, the substrate moving mechanism 1009 is controlled to move in the Z direction according to the movement data generated by the PC 1002. As a result, a predetermined position is irradiated with a laser beam, the holes are connected in the Z direction, and a columnar opening is formed in the insulating film. If the substrate moving mechanism 1009 is controlled to move in the X direction and the Y direction, a hole is formed in the insulating film in a direction parallel to the substrate surface.

Further, the shorter the laser beam, the shorter the beam diameter can be collected. For this reason, the opening of a fine diameter can be formed by irradiating the laser beam of a short wavelength.

Further, the spot shape of the laser beam on the pattern surface can be processed by an optical system so as to be a dot shape, a circle shape, an ellipse shape, a rectangle shape, or a line shape (strictly, a long and narrow rectangle shape).

Here, the laser beam is selectively irradiated by moving the substrate, but the present invention is not limited to this, and the laser beam is irradiated by moving the laser beam in the Z direction, the X direction, and the Y direction. can do. In this case, it is preferable to use a polygon mirror, a galvanometer mirror, or an acousto-optic deflector (AOD) for the optical system 1007.

  Next, a composition containing conductive particles is discharged by a droplet discharge method so as to overlap with the plurality of openings 16 penetrating, thereby forming the second conductive layer 19 (see FIG. 1C). . The formation of the second conductive layer 19 is performed using the droplet discharge means 18. The droplet discharge means 18 is a general term for a device having means for discharging droplets such as a nozzle having a composition discharge port and a head having one or a plurality of nozzles. The nozzle diameter of the droplet discharge means 18 is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 10 pl or less). The discharge amount increases in proportion to the size of the nozzle diameter. In addition, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, preferably about 0.1 to 3 mm (preferably about 1 mm or less). Set.

A composition in which conductive particles are dissolved or dispersed in a solvent is used as the composition discharged from the discharge port. The conductive particles include metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd and Zn, Fe, Ti, Si, Ge, Zr, Ba, and the like. It corresponds to fine particles such as oxides, silver halides, or dispersible nanoparticles. However, it is preferable to use a composition in which any one of gold, silver, and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone are used. The viscosity of the composition is preferably 50 cp or less, in order to prevent the drying from occurring or to smoothly discharge the composition from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application.

Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. 1 μm or less is preferable. The composition is formed by a known method such as an electrolytic method, an atomizing method, or a wet reduction method, and its particle size is about 0.01 to 10 μm. However, when formed by a gas evaporation method, the nanoparticles protected by the dispersant are as fine as about 7 nm, and these nanoparticles are aggregated in the solvent when the surface of each particle is covered with a coating agent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

Here, the droplet discharge device will be described with reference to FIG. The individual heads 1105 and 1112 of the droplet discharge means 1103 are connected to the control means 1107, which can draw a pre-programmed pattern under the control of the computer 1110. The drawing timing may be performed with reference to a marker 1111 formed on the substrate 1100, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1100. This is detected by an imaging means 1104 such as an image sensor using a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS), and converted into a digital signal by an image processing means 1109 and recognized by a computer 1110. A control signal is generated and sent to the control means 1107. Of course, the information on the pattern to be formed on the substrate 1100 is stored in the storage medium 1108. Based on this information, a control signal is sent to the control means 1107, and each head 1105 of the droplet discharge means 1103 is sent. 1112 can be individually controlled. The material to be discharged is supplied from material supply sources 1113 and 1114 to the heads 1105 and 1112 through piping. In FIG. 11, the distance in which the individual heads 1105 and 1112 of the droplet discharge means 1103 are aligned matches the width of the substrate, but the width is larger than the distance in which the individual heads 1105 and 1112 of the droplet discharge means 1103 are aligned. This is a droplet discharge device capable of forming a pattern by repeatedly scanning a large-sized substrate having a pattern. In that case, the heads 1105 and 1112 can freely scan on the substrate in the direction of the arrow to freely set a drawing region, and a plurality of the same patterns can be drawn on one substrate.

  Next, the wiring material is baked and removed by heat treatment or laser light irradiation, and at least one reaction of melting, sintering, and adhesion of the conductive particles is allowed to proceed.

  FIG. 1D shows an example of a top view showing a state after the second conductive layer 19 is formed. Note that FIG. 1C corresponds to a cross-sectional view taken along a chain line AB in FIG.

  As shown in FIG. 1D, a large number of through openings (here, 10) are provided, and the second conductive layer 19 is electrically connected to the first conductive layer 12 through these openings. . Needless to say, the number of openings is not limited to ten, and the arrangement of the openings is not particularly limited.

In addition, an insulator between the minute through openings 16 serves as a spacer, thereby preventing a dent on the surface of the second conductive layer. Further, the wiring width of the second conductive layer 19 can be made uniform. Note that the width W of the second conductive layer and the diameter D of one through opening satisfy 2D <W.

(Embodiment 2)
In this embodiment, examples in which the cross-sectional shape of the opening is different from that in Embodiment 1 are illustrated in FIGS. 3A, 3B, and 3C. Parts different from those of the first embodiment will be described in detail. In FIG. 3, the same parts as those in FIG.

In FIG. 1, the cross-sectional shape of the opening is shown in a columnar shape, but the present invention is not limited to this, and an opening shape having a structure in which a plurality of openings are connected in an insulating film as shown in FIG. It is good.

  First, as in Embodiment 1, a base insulating film 11 and a first conductive layer 12 are formed over a substrate 10 having an insulating surface.

Next, after forming an insulating film made of a material having translucency with respect to a laser beam having a pulse width of 10 ⁻⁴ seconds to 10 ⁻² seconds, an opening 26 penetrating through irradiation with an ultrashort optical pulse laser beam is formed. The insulating film 23 is obtained. By focusing the ultrashort optical pulse laser on the insulating film, multiphoton absorption occurs only at the focal point where the ultrashort optical pulse laser is focused, and a closed hole is formed. , The condensing point can be moved to form one penetrating opening. When the pulse width of the laser light is 10 ⁻⁴ seconds to 10 ⁻² seconds, it is not absorbed by the insulating film 23, but multiphoton absorption is achieved by irradiating laser light with a very short pulse width (picosecond range or femtosecond). It can be generated and absorbed by the insulating film 23.

  Note that the detailed description of the opening formation by the laser light is shown in Embodiment Mode 1, and therefore only a brief description is given here.

  The opening 26 having a complicated cross-sectional shape as shown in FIG. 3A can be formed by moving the focal position in the Z direction, the X direction, or the Y direction while irradiating laser light.

  Next, the second conductive layer 29 is formed by discharging a composition containing conductive particles so as to overlap with the opening 26 by a droplet discharge method (see FIG. 3B). The formation of the second conductive layer 29 is performed using the droplet discharge means 28.

When forming the second conductive layer 29, if the composition is discharged to one opening on the surface of the insulating film 23, the air inside the opening is pushed out from the other opening. By adopting a structure in which a plurality of openings are connected in the insulating film in this manner, conductive particles can be filled without bubbles remaining inside the openings having a complicated shape.

  Next, baking is performed by heat treatment or laser light irradiation and removal, and at least one reaction of melting, sintering, and adhesion of the conductive particles is allowed to proceed.

  During the heat treatment, bubbles may be pushed out from a plurality of openings to the outside, and the conductive particles may be filled without leaving the bubbles inside the openings having a complicated shape.

  FIG. 3C shows an example of a top view showing a state after the second conductive layer 29 is formed. Note that FIG. 3B corresponds to a cross-sectional view taken along a chain line AB in FIG.

As shown in FIG. 3C, the number of openings is six. However, the three openings are connected in the insulating film, and can be called a total of two openings having a complicated shape. In addition, the number of openings provided on the insulating surface is smaller than that in the first embodiment, but the contact area between the first conductive layer and the second conductive layer is larger in this embodiment. Needless to say, the number of openings is not limited to two, and the arrangement of the openings is not particularly limited.

Further, the insulator between the minute through openings 26 serves as a spacer for maintaining the surface position of the second conductive layer, thereby preventing the surface of the second conductive layer from being depressed. Further, the wiring width of the second conductive layer 29 can be made uniform.

Further, this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
In this embodiment, an example in which a plurality of openings are formed by combining laser light and etching will be described with reference to FIG. Parts different from those of the first embodiment will be described in detail. In FIG. 4, the same parts as those in FIG.

Next, after forming an insulating film made of a material having translucency with respect to a laser beam having a pulse width of 10 ⁻⁴ seconds to 10 ⁻² seconds, the hole 37 is closed by irradiation with an ultrashort pulse laser beam. An insulating film 33 having the following is obtained. By focusing the ultrashort optical pulse laser on the insulating film, multiphoton absorption occurs only at the focal point where the ultrashort optical pulse laser is focused, and a closed hole is formed. , The condensing point can be moved to form one penetrating opening. When the pulse width of the laser light is 10 ⁻⁴ seconds to 10 ⁻² seconds, it is not absorbed by the insulating film 33, but multiphoton absorption is achieved by irradiating laser light with a very short pulse width (picosecond range or femtosecond). It can be generated and absorbed by the insulating film 33.

  Note that the detailed description of the opening formation by the laser light is shown in Embodiment Mode 1, and therefore only a brief description is given here.

As shown in FIG. 4A, the closed hole 37 is formed by forming a focal point by the optical system 15 and moving the focal position while irradiating the laser beam.

  Next, as shown in FIG. 4B, the surface of the insulating film is etched to reduce the thickness. By this etching, the insulating film above the closed hole 37 can be removed, and the opening 36 penetrating the closed hole 37 can be formed. At this stage, an insulating film 34 having a plurality of openings 36 penetrating is obtained. Note that a dotted line shown in FIG. 4B indicates the surface of the insulating film before etching.

Further, the insulating film may be thinned by polishing (such as CMP) instead of etching.

  Next, a composition containing conductive particles is discharged using a droplet discharge method so as to overlap with the plurality of openings 36 penetrating therethrough, so that the second conductive layer 39 is formed (see FIG. 4C). . The formation of the second conductive layer 39 is performed using the droplet discharge means 38.

  Next, baking is performed by heat treatment or laser light irradiation and removal, and at least one reaction of melting, sintering, and adhesion of the conductive particles is allowed to proceed.

  According to this embodiment, a relatively shallow through hole can be formed in the insulating film.

Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

(Embodiment 4)
In this embodiment, an example in which the cross-sectional shape of the opening is different from that in Embodiment 1 is illustrated in FIGS. 5A, 5B, and 5C. Parts different from those of the first embodiment will be described in detail, and in FIG. 5, the same parts as those in FIG.

  In this embodiment, an example in which the cross-sectional shape of the opening is a curved shape is shown.

  First, as in Embodiment 1, a base insulating film 11 and a first conductive layer 12 are formed over a substrate 10 having an insulating surface.

Next, after forming an insulating film made of a material having a light-transmitting property with respect to the laser light, an insulating film 43 having an opening 46 penetrating the ultrashort optical pulse laser light is obtained. When the pulse width of the laser light is 10 ⁻⁴ seconds to 10 ⁻² seconds, it is not absorbed by the insulating film 43, but multiphoton absorption is achieved by irradiating laser light with a very short pulse width (picosecond range or femtosecond). It can be generated and absorbed by the insulating film 43.

  Note that the detailed description of the opening formation by the laser light is shown in Embodiment Mode 1, and therefore only a brief description is given here.

  The opening 46 having a curved cross-sectional shape as shown in FIG. 5A is moved, for example, in the X direction or the Y direction while irradiating laser light, then moved in the Z direction, and again in the X direction or It can be formed by repeating the movement in the Y direction.

  Note that the opening 46 having a curved cross-sectional shape exposes the side surface of the first conductive layer 12.

  Next, a composition containing conductive particles is discharged using a droplet discharge method so as to overlap with the plurality of openings 46 that penetrated, so that the second conductive layer 49 is formed (see FIG. 5B). . The formation of the second conductive layer 49 is performed using the droplet discharge means 48. In this embodiment mode, since the cross-sectional shape of the opening is curved, a composition containing conductive particles can be filled into the opening smoothly.

  Next, baking is performed by heat treatment or laser light irradiation and removal, and at least one reaction of melting, sintering, and adhesion of the conductive particles is allowed to proceed.

  FIG. 5C shows an example of a top view showing a state after the second conductive layer 49 is formed. Note that FIG. 5B corresponds to a cross-sectional view taken along a chain line AB in FIG. FIG. 5C shows an example in which two types of openings of an elliptical shape and a circular shape are formed. That is, a total of four openings, that is, three elliptical openings and one circular opening are formed. Thus, the present invention can form a plurality of types of openings by freely adjusting the focal position of the laser beam.

  According to the present embodiment, the cross-sectional shape of the penetrating opening 46 can be curved, and electrical conduction with the second conductive layer 49 can be performed on the side surface of the first conductive layer 12. Therefore, the first conductive layer 12 and the second conductive layer 49 can be arranged so as not to overlap. With this arrangement, the parasitic capacitance formed between the first conductive layer 12 and the second conductive layer 49 can be reduced.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 3.

(Embodiment 5)
In this embodiment mode, an example in which a TFT is formed by using an opening by a laser beam of the present invention is shown in FIG.

  First, the base insulating film 201 is formed over the substrate 200 having an insulating surface. As the substrate 200 having an insulating surface, a light-transmitting substrate such as a glass substrate, a crystallized glass substrate, or a plastic substrate can be used. As the plastic substrate, a film-like plastic substrate such as polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone ( Plastic substrates such as PSF), polyetherimide (PEI), polyarylate (PAR), and polybutylene terephthalate (PBT) are preferable. Further, a plastic substrate having heat resistance, for example, a plastic substrate obtained by processing a material in which inorganic particles having a diameter of several nm are dispersed in an organic polymer matrix into a sheet shape may be used.

As the base insulating film 201, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiO _x N _y ) is used. As a typical example, the base insulating film 11 has a two-layer structure, and a silicon nitride oxide film formed using SiH ₄ , NH ₃ , and N ₂ O as a reactive gas is 50 to 100 nm, SiH ₄ , and N ₂ O. A structure is employed in which a silicon oxynitride film is deposited to a thickness of 100 to 150 nm formed using a reactive gas as a reactive gas. Further, a silicon nitride film (SiN film) or a silicon oxynitride film (SiN _x O _y film (X> Y)) with a thickness of 10 nm or less is preferably used as one layer of the base insulating film 201. Alternatively, a three-layer structure in which a silicon nitride oxide film, a silicon oxynitride film, and a silicon nitride film are sequentially stacked may be used. Although an example in which the base insulating film 201 is formed is shown here, it is not necessary to provide it unless particularly necessary.

  Next, a first insulating film 202 to be a gate insulating film is formed. As the first insulating film 202, it is preferable to use a material that transmits and hardly absorbs the fundamental wave of the laser light used in the subsequent opening process. As the first insulating film 202, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used. Alternatively, as the first insulating film 202, a film obtained by applying and baking a solution containing polysilazane or a siloxane polymer, a photocurable organic resin film, a thermosetting organic resin film, or the like may be used.

Next, a semiconductor film is formed. The semiconductor film is formed using an amorphous semiconductor film or a microcrystalline semiconductor film which is manufactured by a vapor deposition method, a sputtering method, or a thermal CVD method using a semiconductor material gas typified by silane or germane. In this embodiment, an example in which an amorphous silicon film is used as a semiconductor film is described. In addition, as the semiconductor film, an oxide of ZnO or zinc gallium indium manufactured by a sputtering method or a PLD (Pulse Laser Deposition) method may be used. In that case, the gate insulating film is an oxide containing aluminum or titanium. It is preferable that Also, organic materials such as pentacene, tetracene, thiophene oligomer derivatives, phenylene derivatives, phthalocyanine compounds, polyacetylene derivatives, polythiophene derivatives, cyanine dyes, etc., which are produced by a coating method, a droplet discharge method or a vapor deposition method can be used as a semiconductor film. Good.

Next, a conductive semiconductor film is formed. As the conductive semiconductor film, a semiconductor film which is doped with n-type or p-type impurities and exhibits n-type or p-type conductivity is used. The n-type semiconductor film may be formed by a PCVD method using silane gas and phosphine gas. In this embodiment, an example in which a silicon film containing phosphorus is used as a conductive semiconductor film is described. When an organic material such as pentacene is used as the semiconductor film, a charge transport layer is used instead of the conductive semiconductor film, for example, triphenyldiamine that functions as a hole transport layer, or oxadi that functions as an electron transport layer. An azole may be used.

  Next, patterning using a known photolithography technique is performed to obtain an island-shaped semiconductor layer 207 and a conductive semiconductor layer 206. Note that a mask may be formed by using a droplet discharge method or a printing method (such as a relief plate, a planographic plate, an intaglio plate, or a screen) instead of the known photolithography technique, and etching may be performed selectively.

  Next, a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.)) is selectively discharged by a droplet discharge method to form wiring. 203, 204, and 209 are formed. FIG. 6A shows a state where a composition containing a conductive material is discharged from the inkjet head 208. Note that the wirings 203, 204, and 209 are not limited to being formed by a droplet discharge method. For example, a metal film is formed by a sputtering method, a mask is formed, and etching is selectively performed. Also good.

Next, the conductive semiconductor layer and the upper portion of the semiconductor layer are etched using the wirings 203, 204, and 209 as a mask to expose part of the semiconductor layer. The exposed portion of the semiconductor layer is a location that functions as a channel formation region of the TFT.

  Next, an interlayer insulating film 211 including a protective film for preventing the channel formation region from impurity contamination is formed. As the protective film, silicon nitride obtained by sputtering or PCVD, or a material mainly containing silicon nitride oxide is used. In this embodiment mode, hydrogenation is performed after the protective film is formed. For the interlayer insulating film, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, a melamine resin, or a urethane resin is used. In addition, a composition comprising an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, permeable polyimide, a compound material obtained by polymerization of a siloxane polymer, a water-soluble homopolymer and a water-soluble copolymer Materials and the like can be used.

  Next, the interlayer insulating film 211 including the protective film is irradiated with an ultrashort pulsed laser beam to form a plurality of first openings 210. In addition, in order to prevent the channel formation region from being irradiated with laser light, ultrashort optical pulse laser light is also applied from the back side of the substrate to form a plurality of second openings 212. FIG. 6B shows a cross-sectional view in which the ultrashort optical pulse laser beam that has passed through the optical system 205 forms the second opening 212.

When the pulse width of the laser light is 10 ⁻⁴ seconds to 10 ⁻² seconds, it is not absorbed by the interlayer insulating film 211 including the protective film, but the laser light having a very short pulse width (picosecond range or femtosecond) is irradiated. Thus, multiphoton absorption can be caused to be absorbed in the interlayer insulating film 211 including the protective film.

  Note that the detailed description of the opening formation by the laser light is shown in Embodiment Mode 1, and therefore only a brief description is given here.

  In this embodiment mode, the first insulating film 202 between the second opening 212 and the semiconductor layer 207 serves as a gate insulating film. Therefore, the thickness of the gate insulating film can be freely determined by forming the second opening 212.

  Next, a composition containing conductive particles is discharged using a droplet discharge method so as to overlap the plurality of first openings and second openings penetrating, and the inside of each opening is filled with the conductive particles. Then, when baking is performed, the conductive particles are melted and aggregated to form crystals of about 100 nm, so that gate electrodes, gate wirings 214 and 215, and connection wirings 213 are formed (see FIG. 6C). In this embodiment mode, gate electrodes and gate wirings arranged in different layers can be formed at the same time and with the same material.

  At this stage, a channel etch type TFT is completed. In this embodiment mode, one of the major features is a process sequence in which a gate electrode is formed after an interlayer insulating film is formed.

  An example of a top view of the TFT at the stage of FIG. 6C is shown in FIG. In FIG. 6D, a cross-sectional view taken along chain line AB corresponds to the cross-sectional view of FIG. Note that the same reference numerals are used for corresponding parts.

  As shown in FIG. 6D, a double-gate TFT having two channel formation regions. The gate wirings 214 and 215 are electrically connected through a third opening 216 formed in the Z direction (a direction perpendicular to the substrate surface) and a second opening 212 formed in the Y direction. Note that the third opening 216 is formed using laser light in the same manner as the formation of the first opening or the second opening.

Further, the second opening 212 and the third opening 216 are connected inside the interlayer insulating film. The third opening 216 is different in depth from the first opening 210. In addition, the connection wiring 213 is electrically connected to the wiring 209 through the first opening 210.

  In this embodiment mode, the order of forming the first opening and the second opening is not particularly limited, and the second opening may be formed first. Further, the third opening may be formed by continuously moving the focal position of the laser light as it is when the second opening is formed.

  In addition, an active matrix liquid crystal display device can be manufactured using the connection wiring 213 as a pixel electrode. In addition, a first electrode that overlaps with the connection wiring 213 and a partition wall that covers the first end portion are formed, and a layer containing an organic compound and a second electrode are stacked over the first electrode, whereby active matrix light emission is performed. A display device can also be manufactured.

  In accordance with this embodiment mode, the gate electrode is formed later, the semiconductor layer 207 can be formed over a flat insulating surface, and an opening for forming the gate electrode can be formed in the semiconductor layer without damage. Therefore, since the semiconductor layer can be formed by a coating method, it is effective when an organic material is used for the semiconductor layer.

  In addition, according to this embodiment mode, since the opening is formed with laser light, the number of TFT manufacturing steps can be relatively small.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, or Embodiment Mode 4.

(Embodiment 6)
In this embodiment mode, an example of forming a TFT different from that in Embodiment Mode 5 is shown in FIG.

First, the base insulating film 301 is formed over the substrate 300 having an insulating surface. As the substrate 300 having an insulating surface, a light-transmitting substrate such as a glass substrate, a crystallized glass substrate, or a plastic substrate can be used. A ceramic substrate, a semiconductor substrate, a metal substrate, or the like can also be used in the case where an opening is formed in a later step without passing laser light through the substrate.

As the base insulating film 301, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiO _x N _y ) is used.

Next, a semiconductor layer is formed over the base insulating film 301. The semiconductor layer is formed by forming a semiconductor film having an amorphous structure by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), and then known crystallization treatment (laser crystallization method, thermal crystallization method). Or a thermal crystallization method using a catalyst such as nickel), and a first resist mask exposed by scanning with a laser beam is formed on the crystalline semiconductor film obtained by performing It is used by patterning into a desired shape. The semiconductor layer is formed with a thickness of 25 to 80 nm (preferably 30 to 70 nm). There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon or a silicon germanium (SiGe) alloy.

Next, after removing the first resist mask, a gate insulating film 303 covering the semiconductor layer is formed. The gate insulating film 303 is formed by a plasma CVD method, a sputtering method, or a thermal oxidation method, and has a thickness of 1 to 200 nm. As the gate insulating film 303, a film formed of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed.

  Next, after a resist film is formed over the gate insulating film 303, a second resist mask is formed which is exposed by scanning with laser light. An impurity element imparting p-type or n-type is selectively added to the semiconductor layer by an ion doping method or an ion implantation method using the second resist mask as a mask. Thus, the regions to which the impurity element is added become impurity regions 304, 306, and 307. The region 302 covered with the second resist mask and not doped with an impurity element functions as a channel formation region of the TFT.

  Thereafter, the second resist mask is removed, and the impurity element added to the semiconductor layer is activated and hydrogenated.

  Next, as illustrated in FIG. 7A, an interlayer insulating film 319 having flatness is formed. The interlayer insulating film 319 includes a light-transmitting inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclohexane). Butene) or a laminate of these. Further, as another light-transmitting film used for the interlayer insulating film 319, an insulating film made of a SiOx film containing an alkyl group obtained by a coating method, for example, silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, An insulating film formed using a hydrogenated silsesquioxane polymer, a hydrogenated alkylsilsesquioxane polymer, or the like can be used. Examples of the siloxane polymer include PSB-K1 and PSB-K31, which are Toray-made coating insulating film materials, and ZRS-5PH, which is a catalytic chemical coating insulating film material.

  Next, a plurality of first openings 309 are formed in the interlayer insulating film 319 and the gate insulating film 303 using laser light. The plurality of first openings 309 are formed so as to reach the impurity regions 304 and 307. A plurality of second openings 310 and 311 are formed in the interlayer insulating film 319 using laser light. The plurality of second openings 310 and 311 are formed at positions overlapping the region 302 to which the impurity element is not added. In FIG. 7B, after the second opening 310 is formed, the focal position of the ultrashort optical pulse laser beam is moved, and the ultrashort optical pulse laser beam that has passed through the optical system 305 is transferred to the first aperture 309. The cross-sectional view which forms is shown.

When the pulse width of the laser beam is 10 ⁻⁴ seconds to 10 ⁻² seconds, it is not absorbed by the interlayer insulating film 319 including the protective film, but the laser beam having a very short pulse width (picosecond range or femtosecond) is irradiated. Thus, multiphoton absorption can be caused to be absorbed by the interlayer insulating film 319 including the protective film.

  Note that the detailed description of the opening formation by the laser light is shown in Embodiment Mode 1, and therefore only a brief description is given here.

  Next, a composition containing conductive particles of 3 to 7 nm is discharged using a droplet discharge method so as to overlap with the plurality of first openings and second openings penetrating the conductive particles. Fill. Then, when baking is performed, the conductive particles are melted and aggregated to form crystals of about 100 nm, so that gate electrodes 313 and 314 and source or drain electrodes 312 and 315 are formed (see FIG. 7C). In this embodiment mode, the gate electrode and the source electrode arranged in different layers can be formed using the same material. FIG. 7C shows a state where a composition containing a conductive material is discharged from the inkjet head 308.

  At this stage, a top gate type TFT is completed. As shown in FIG. 7C, a double-gate TFT having two channel formation regions. In this embodiment mode, one of the major features is a process sequence in which a gate electrode is formed after an interlayer insulating film is formed.

  An example in which the TFT is cut in a plane different from that in FIG. 7C is illustrated in FIG. In FIG. 7C, a cross-sectional view taken along a plane including a chain line CD corresponds to FIG. Note that the same reference numerals are used for corresponding parts.

  As shown in FIG. 7D, the second opening 310 extends into the interlayer insulating film 319, and the bottom of the second opening 310 is in contact with the gate insulating film 303.

  Although not shown here, the gate electrodes 313 and 314 have the same wiring on the interlayer insulating film 319.

  Further, an active matrix liquid crystal display device can be manufactured using the TFT described in this embodiment as a switching element.

  A method for manufacturing an active matrix liquid crystal display device using the TFT described in this embodiment as a switching element is described below.

  After the source or drain electrode 315 is formed, the insulating film 316 is formed. Then, a contact hole is formed in the insulating film 316, and a pixel electrode 317 is formed using ITO or the like. A terminal electrode is formed on the insulating film 316 with ITO or the like.

Next, an alignment film 320 is formed so as to cover the pixel electrode 317. Note that the alignment film 320 may be formed using a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 320.

  The counter substrate 323 is formed with a counter electrode 324 made of a transparent electrode and an alignment film 322 formed thereon. Then, a sealing material (not shown) as a closed pattern is formed so as to surround a region overlapping with the pixel portion by a droplet discharge method. Here, an example of drawing a sealing material with a closed pattern in order to drip liquid crystal is shown, but a dip type (pumping) in which a sealing pattern having an opening is provided and liquid crystal is injected using a capillary phenomenon after the TFT substrate is bonded together Formula) may also be used.

  Next, liquid crystal is dropped under reduced pressure so that bubbles do not enter, and both substrates are bonded together. The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. As the alignment mode of the liquid crystal 321, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from incident light to outgoing light is often used. When a TN mode liquid crystal display device is manufactured, the substrates are bonded so that the rubbing directions of the substrates are orthogonal.

  Note that the distance between the pair of substrates may be maintained by spraying spherical spacers, forming columnar spacers made of resin, or including a filler in the sealing material. The columnar spacer is made of an organic resin material mainly containing at least one of acrylic, polyimide, polyimide amide, and epoxy, or any one of silicon oxide, silicon nitride, and silicon oxynitride, or a laminated film thereof. It is characterized by being an inorganic material.

  Next, the unnecessary substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the dividing step can be omitted by attaching a counter substrate that has been cut in advance.

And FPC is affixed on a terminal electrode through an anisotropic conductor film using a well-known technique. The liquid crystal module is completed through the above steps. (FIG. 8) If necessary, an optical film such as a color filter is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the active matrix substrate and the counter substrate.

  Further, an active matrix light-emitting display device can be manufactured using the TFT described in this embodiment.

  A method for manufacturing an active matrix light-emitting display device using the TFT described in this embodiment mode is described below. Here, an example in which the TFT is an n-channel TFT is shown.

  After the source or drain electrode 315 is formed, the insulating film 316 is formed. Then, a contact hole is formed in the insulating film 316, and a first electrode 318 is formed.

It is preferable that the first electrode 318 function as a cathode. In the case of transmitting light emission, the first electrode 318 includes indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and the like. A predetermined pattern made of an object is formed. In addition, when light emission is reflected by the first electrode 318, a composition mainly composed of metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum). A first pattern 318 is formed to form a first electrode 318.

  Next, a partition wall 331 is formed to cover the periphery of the first electrode 318. A partition wall (also referred to as a bank) 331 is formed using a material containing silicon, an organic material, and a compound material. A porous film may be used. However, it is preferable to use a photosensitive or non-photosensitive material such as acrylic or polyimide because the side surface has a shape in which the radius of curvature continuously changes and the upper thin film is formed without being cut off.

  Next, a layer functioning as an electroluminescent layer, that is, a layer 330 containing an organic compound is formed. The layer 330 containing an organic compound has a stacked structure, and is formed using an evaporation method or a coating method, respectively. For example, an electron transport layer (electron injection layer), a light emitting layer, a hole transport layer, and a hole injection layer are sequentially stacked on the cathode.

Note that plasma treatment in an oxygen atmosphere or heat treatment in a vacuum atmosphere is preferably performed before the formation of the layer 330 containing an organic compound. When the vapor deposition method is used, the organic compound is vaporized by resistance heating in advance, and is scattered in the direction of the substrate when the shutter is opened during vapor deposition. The vaporized organic compound scatters upward and is deposited on the substrate through an opening provided in the metal mask. In order to achieve full color, the mask may be aligned for each emission color (R, G, B).

  Further, full color display can be performed by combining a color filter and a color conversion layer using a material that emits monochromatic light as the layer 330 containing an organic compound without separately coating.

  Next, a second electrode 332 is formed. The second electrode 332 functioning as an anode of the light-emitting element is formed using a transparent conductive film that transmits light. For example, in addition to ITO and ITSO, indium oxide is mixed with 2 to 20% zinc oxide (ZnO). A conductive film is used. The light-emitting element has a structure in which a layer 330 containing an organic compound is sandwiched between a first electrode and a second electrode. Note that materials for the first electrode and the second electrode need to be selected in consideration of a work function, and the first electrode and the second electrode can be either an anode or a cathode depending on the pixel structure.

  In addition, a protective layer for protecting the second electrode 332 may be formed.

  Next, the sealing substrate 334 is attached with a sealant (not shown) to seal the light emitting element. Note that a region surrounded by the sealant is filled with a transparent filler 333. The filler 333 is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet curable or thermosetting epoxy resin may be used.

  Finally, the FPC is attached to the terminal electrode by a known method using an anisotropic conductive film.

  Through the above steps, an active matrix light-emitting device as shown in FIG. 9 can be manufactured.

Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, or Embodiment Mode 5.

  The present invention having the above-described configuration will be described in more detail with the following examples.

  In this embodiment, a process of forming a multilayer wiring on a semiconductor substrate will be described with reference to FIG.

  First, a semiconductor substrate 500 made of single crystal silicon is prepared. The semiconductor substrate 500 is a single crystal silicon substrate or a compound semiconductor substrate, and is typically an N-type or P-type single crystal silicon substrate, GaAs substrate, InP substrate, GaN substrate, SiC substrate, sapphire substrate, or ZnSe substrate. It is.

Then, an n-type well is selectively formed in the first element formation region on the main surface (element formation surface or circuit formation surface) of the semiconductor substrate, and a p-type well is selectively formed in the second element formation region.

  Next, field oxide films 503, 504, and 505 serving as element isolation regions for partitioning the first element formation region and the second element formation region are formed. The field oxide films 503, 504, and 505 are thick thermal oxide films and may be formed using a known LOCOS method. The element isolation method is not limited to the LOCOS method. For example, the element isolation region may have a trench structure using the trench isolation method, or may be a combination of the LOCOS structure and the trench structure.

  Next, a gate insulating film is formed by thermally oxidizing the surface of the silicon substrate, for example. The gate insulating film may be formed by a CVD method, and a silicon oxynitride film, a silicon oxide film, a silicon nitride film, or a stacked film thereof can be used. For example, a stacked film of a silicon oxide film having a thickness of 5 nm obtained by thermal oxidation and a silicon oxynitride film having a thickness of 10 nm to 15 nm obtained by a CVD method is formed.

Next, a laminated film of a polysilicon layer and a silicide layer is formed on the entire surface, and the laminated film is patterned based on a lithography technique and a dry etching technique, thereby forming a gate electrode 506 having a polycide structure on the gate insulating film. In order to reduce the resistance of the polysilicon layer, phosphorus (P) may be doped in advance at a concentration of about 10 ²¹ / cm ^3, or after forming the polysilicon layer, a dense n-type impurity is diffused. May be. As a material for forming the silicide layer, molybdenum silicide (MoSix), tungsten silicide (WSix), tantalum silicide (TaSix), titanium silicide (TiSix), or the like can be applied. The silicide layer may be formed according to a known method. .

  Next, the gate insulating film is selectively removed. Thus, the gate insulating film 508 having the width of the gate electrode is formed.

  Next, sidewalls 510 to 513 are formed on the sidewalls of the gate electrode. For example, an insulating material layer made of silicon oxide may be deposited on the entire surface by a CVD method, and the insulating material layer may be etched back to form the sidewall.

  Next, ion implantation is performed on the exposed silicon substrate to form a source region and a drain region. Since the CMOS is manufactured, the first element formation region where the p-channel FET is to be formed is covered with a resist material, and n-type impurities such as arsenic (As) and phosphorus (P) are implanted into the silicon substrate. Thus, a source region 514 and a drain region 515 are formed. At the same time, low concentration impurity regions 518 and 519 doped with n-type impurities are formed through the sidewalls. Further, the second element formation region in which the n-channel FET is to be formed is covered with a resist material, and boron (B) which is a p-type impurity is implanted into the silicon substrate to form the source region 516 and the drain region 517. At the same time, low-concentration impurity regions 520 and 521 to which p-type impurities are added are formed through the sidewalls.

  Next, activation processing is performed using a GRTA method, an LRTA method, or the like in order to activate the implanted impurities and recover crystal defects in the silicon substrate generated by the ion implantation (see FIG. 12A). .

Next, as shown in FIG. 12B, a first interlayer insulating film 545 is formed. The first interlayer insulating film 545 is formed with a thickness of 100 to 2000 nm using a silicon oxide film, a silicon oxynitride film, or the like by a plasma CVD method or a low pressure CVD method. Furthermore, an interlayer insulating film of phosphorus glass (PSG), boron glass (BSG), or phosphorus boron glass (PBSG) may be stacked thereon.

  Next, as shown in FIG. 12B, the openings 541 to 544 are formed by irradiating with laser light emitted from the ultrashort pulse laser which is the opening forming method of the present invention shown in Embodiment Mode 1. .

  Next, as illustrated in FIG. 12C, a composition containing conductive particles is discharged to the opening by a droplet discharge method, and then fired to form conductive films 551 to 554. According to the present invention, the portion overlapping the opening cannot be recessed, and the upper surfaces of the conductive films 551 to 554 are substantially the same surface.

Thereafter, a second interlayer insulating film 561 is formed. Similarly, openings and conductive films 562 to 565 are formed, so that a multilayer wiring can be formed as shown in FIG. Since the upper surfaces of the conductive films 551 to 554 are substantially the same surface, the depth of the opening that penetrates the second interlayer insulating film 561 can be made constant.

Further, an SOI substrate is used as the semiconductor substrate 500, and a circuit having a MOS transistor can be peeled by performing a treatment that can be peeled off at the interface or layer between the silicon substrate and the oxide insulating film by a known peeling method. . In addition, the semiconductor device can be thinned by adhering a circuit including a peeled MOS transistor to a flexible substrate.

Further, the semiconductor device shown in this embodiment can be applied to various semiconductor devices such as bipolar transistors in addition to MOS transistors. Further, it can be applied to circuits such as a memory and a logic circuit.

An IC chip in which FETs manufactured in this embodiment are integrated can be used as a thin film integrated circuit or a non-contact type thin film integrated circuit device (wireless IC tag, also referred to as RFID (Radio Frequency Identification)).

An example of an ID card in which an IC chip 1516 of the present invention is attached to a card-like substrate 1518 provided with a conductive layer 1517 functioning as an antenna is shown in FIG. The conductive layer 1517 functioning as an antenna can also be formed by a droplet discharge method. Alternatively, the contact hole between the conductive layer 1517 functioning as an antenna and the connection electrode connected to the conductive layer 1517 may be formed by using the laser beam opening formation technique of the present invention. As described above, the IC chip 1516 of the present invention is small, thin, and lightweight, realizes a wide variety of uses, and does not impair the design of the article even when attached to the article.

Note that the IC chip 1516 of the present invention is not limited to the form of being attached to the card-like substrate 1518, and can be attached to a curved surface or an article having various shapes. For example, IC chips are bills, coins, securities, bearer bonds, certificate documents (driver's license, resident's card, etc.), packaging containers (wrapping paper, bottles, etc.), recording media (DVD software, video tape, etc.) ), Vehicles (such as bicycles), personal items (such as bags and glasses), foods, clothing, daily necessities, and the like.

Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, Embodiment Mode 5, or Embodiment Mode 6.

In this example, a module having the display panel described in Embodiment 5 or 6 will be described with reference to FIGS. FIG. 14 shows a module in which a display panel 9501 and a circuit board 9502 are combined. For example, a control circuit 9504, a signal dividing circuit 9505, and the like are formed on the circuit board 9502. Further, the display panel 9501 and the circuit board 9502 are connected by a connection wiring 9503. As the display panel 9501, a liquid crystal display panel or a light-emitting display panel as described in Embodiment 5 or 6 can be used as appropriate.

  This display panel 9501 includes a pixel portion 9506 in which a light-emitting element is provided in each pixel, a scanning line driver circuit 9507, and a signal line driver circuit 9508 that supplies a video signal to a selected pixel. The structure of the pixel portion 9506 is the same as that in Embodiment 5 or 6. The scanning line driver circuit 9507 and the signal line driver circuit 9508 are a known anisotropic conductive adhesive, a mounting method using an anisotropic conductive film, a COG method, a wire bonding method, and a reflow using a solder bump. A scanning line driver circuit 9507 and a signal line driver circuit 9508 formed with IC chips are mounted on the substrate by processing or the like.

  According to this embodiment, a display module can be formed at low cost.

In addition, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, Embodiment Mode 5, Embodiment Mode 6, or Example 1.

In the above-described embodiments, examples of the liquid crystal display module and the light-emitting display module are shown as the display module. However, the display module is not limited to this, but is not limited to this, DMD (Digital Micromirror Device), PDP (Plasma Display Panel). The present invention can be appropriately applied to the opening formation and wiring formation of display modules such as panels), FEDs (Field Emission Displays), electrophoretic display devices (electronic paper), and electrodeposition type image display devices. it can.

In addition, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, Embodiment Mode 5, and Embodiment Mode 6.

As an electronic device including the semiconductor device described in any of the above embodiments and examples, a television device (also simply referred to as a television or a television receiver) can be given. Here, a specific example of a television device will be described with reference to FIG.

FIG. 15A is a block diagram of a television device, and FIG. 15B is a perspective view of the television device. A liquid crystal registration device or an EL television device can be completed by the liquid crystal module or the EL module shown in the above embodiment.

FIG. 15A is a block diagram illustrating a main structure of a television device. A tuner 9511 receives a video signal and an audio signal. The video signal includes a video detection circuit 9512, a video signal processing circuit 9513 that converts the signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and converts the video signal into the input specifications of the driver IC. Is processed by a control circuit 9514. The control circuit 9514 outputs signals to the scan line driver circuit 9516 and the signal line driver circuit 9517 of the display panel 9515, respectively. In the case of digital driving, a signal dividing circuit 9518 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 9511, the audio signal is sent to the audio detection circuit 9521, and the output is supplied to the speaker 9523 through the audio signal processing circuit 9522. The control circuit 9524 receives control information on the receiving station (reception frequency) and volume from the input unit 9525 and sends a signal to the tuner 9511 and the audio signal processing circuit 9522.

  As shown in FIG. 15B, a television set can be completed by incorporating a module into a housing 9531. A display screen 9532 is formed by a module typified by a liquid crystal module or an EL module. In addition, a speaker 9533, an operation switch 9534, and the like are provided as appropriate.

  This television device includes the display panel 9515, so that the cost of the television device can be reduced. In addition, a television device capable of high-definition display can be manufactured.

Note that the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a personal computer monitor, an information display board at a railway station or an airport, and an advertisement display board in a street. can do.

In addition, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, Embodiment Mode 5, and Embodiment Mode 6.

As a semiconductor device and an electronic device of the present invention, a camera such as a video camera or a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a personal computer, a game device, A portable information terminal (mobile computer, cellular phone, portable game machine, electronic book, or the like), an image reproducing device (specifically, Digital Versatile Disc (DVD)) equipped with a recording medium is reproduced, and the image is displayed. A device having a display capable of displaying). Specific examples of these electronic devices are shown in FIGS.

FIG. 16A shows a digital camera, which includes a main body 2101, a display portion 2102, an imaging portion, operation keys 2104, a shutter 2106, and the like. Note that FIG. 16A is a view from the display portion 2102 side, and the imaging portion is not shown. According to the present invention, a digital camera can be realized by a process with reduced manufacturing costs.

FIG. 16B illustrates a personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. According to the present invention, a personal computer can be realized by a process with reduced manufacturing costs.

FIG. 16C illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. A display portion A2403 mainly displays image information, and a display portion B2404 mainly displays character information. Note that an image reproducing device provided with a recording medium includes a home game machine and the like. According to the present invention, an image reproducing device can be realized by a process with reduced manufacturing costs.

FIG. 16D is a perspective view of a portable information terminal, and FIG. 16E is a perspective view showing a state in which the portable information terminal is folded and used as a mobile phone. In FIG. 16D, the user operates the operation key 2706a with the right hand finger and operates the operation key 2706b with the left hand finger like a keyboard. According to the present invention, a portable information terminal can be realized by a process with reduced manufacturing costs.

As shown in FIG. 16E, in the case of folding, the main body 2701 and the housing 2702 are held with one hand, and the audio input unit 2704, the audio output unit 2705, the operation keys 2706c, the antenna 2708, and the like are used.

Note that the portable information terminal illustrated in FIGS. 16D and 16E mainly includes a high-quality display portion 2703a that horizontally displays images and characters, and a display portion 2703b that vertically displays.

  As described above, the present invention is implemented, that is, any one of the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, the sixth embodiment, and the first to fourth embodiments. A variety of electronic devices can be completed using one manufacturing method or structure.

According to the present invention, a semiconductor device that functions as a wireless chip (also referred to as a wireless processor, a wireless memory, or a wireless tag) can be formed.

  In the first embodiment, an example in which a chip cut out from a semiconductor substrate is mounted on a card having an antenna is shown. However, a wireless chip can also be formed using a TFT.

  A structure of a wireless chip that can be formed according to the present invention will be described with reference to FIGS. The wireless chip is formed with a thin film integrated circuit 9303 and an antenna 9304 connected thereto. The thin film integrated circuit 9303 and the antenna 9304 are sandwiched between cover materials 9301 and 9302. The thin film integrated circuit 9303 may be bonded to the cover material with an adhesive. In FIG. 17, one of the thin film integrated circuits 9303 is bonded to a cover material 9301 with an adhesive 9305 interposed therebetween.

The thin film integrated circuit 9303 is formed using the TFT shown in Embodiment Mode 5 or Embodiment Mode 6, and then peeled off by a known peeling step to be provided on the cover material. The semiconductor element used for the thin film integrated circuit 9303 is not limited to this. For example, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, or the like can be used in addition to the TFT.

As shown in FIG. 17, an interlayer insulating film 9311 is formed over the TFT of the thin film integrated circuit 9303, and an antenna 9304 connected to the TFT through the interlayer insulating film 9311 is formed. A barrier film 9312 made of a silicon nitride film or the like is formed over the interlayer insulating film 9311 and the antenna 9304.

The antenna 9304 is formed by discharging a droplet including a conductor such as gold, silver, or copper by a droplet discharge method, followed by drying and baking. By forming the antenna by a droplet discharge method, the number of steps can be reduced, and the cost can be reduced accordingly.

Cover materials 9301 and 9302 are laminated films (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.), papers made of fibrous materials, base films (polyester, polyamide, inorganic vapor deposition films, papers, etc.) ) And an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.). The laminate film is laminated with the object to be processed by thermocompression bonding. When performing the laminate process, the laminate film is an adhesive layer provided on the outermost surface of the laminate film or a layer provided on the outermost layer. (Not the adhesive layer) is melted by heat treatment and bonded by pressure.

In addition, by using an incineration-free pollution material such as paper, fiber, and carbon graphite for the cover material, the used wireless chip can be incinerated or cut. Further, wireless chips using these materials are non-polluting because they do not generate toxic gas even when incinerated.

Note that in FIG. 17, the wireless chip is provided on the cover material 9301 with the adhesive 9305. However, instead of the cover material 9301, the wireless chip may be attached to an article and used.

The use of the wireless chip 9210 is wide-ranging. An example is shown in FIG. 18. For example, banknotes, coins, securities, bearer bonds, certificates (driver's license, resident's card, etc., see FIG. 18A), packaging containers (wrapping paper, Bottle, etc., see FIG. 18C), recording medium (DVD software, video tape, etc., see FIG. 18B), vehicles (bicycles, etc., see FIG. 18D), personal items (bags, glasses, etc.) ), Used on goods such as foods, plants, animals, human bodies, clothing, daily necessities, electronic devices, etc. and luggage tags (see FIGS. 18E and 18F). be able to. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), mobile phones, and the like.

The wireless chip is fixed to the article by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Forgery can be prevented by providing wireless chips on banknotes, coins, securities, bearer bonds, certificates, etc. In addition, by providing wireless chips in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. The wireless chip that can be formed according to the present invention is small, thin, and lightweight because it is provided on a cover material after a thin film integrated circuit formed over a substrate is peeled off by a known peeling process, and is mounted on an article. However, the design is not impaired. Furthermore, since it has flexibility, it can be used for a bottle or pipe having a curved surface.

Further, by applying a wireless chip that can be formed according to the present invention to an object management or distribution system, it is possible to increase the functionality of the system. For example, by reading the information recorded on the wireless chip provided on the tag with a reader / writer provided on the side of the belt conveyor, information such as the distribution process and delivery destination is read, and inspection of goods and distribution of goods Can be done easily.

In addition, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 3, Embodiment Mode 4, Embodiment Mode 5, Embodiment Mode 6, or Example 1.

  According to the present invention, since the number of etching steps by photolithography can be reduced, the loss of material liquid and the amount of waste liquid can be reduced. In addition, the present invention can realize a manufacturing process using a droplet discharge method suitable for a large substrate in mass production.

The process sectional drawing and top view of this invention. (Embodiment 1) Sectional drawing explaining the manufacturing process of the opening which concerns on this invention. (Embodiment 1) Sectional drawing and top view which show an example of the opening shape of this invention. (Embodiment 2) Sectional drawing explaining the manufacturing process of the opening which concerns on this invention. (Embodiment 3) Sectional drawing and top view which show an example of the opening shape of this invention. (Embodiment 4) Sectional drawing which shows the manufacturing process of bottom-gate TFT. (Embodiment 5) Sectional drawing which shows the manufacturing process of top gate type TFT. (Embodiment 6) Sectional drawing which shows the structure of an active-matrix liquid crystal display device. (Embodiment 6) FIG. 10 is a cross-sectional view illustrating a structure of an active matrix EL display device. (Embodiment 6) FIG. 10 illustrates a laser beam drawing apparatus applicable to the present invention. (Embodiment 1) FIG. 6 illustrates a droplet discharge device that can be applied to the present invention. (Embodiment 1) 9 is a cross-sectional view illustrating a method for manufacturing a semiconductor device. Example 1 The perspective view of a semiconductor device. Example 1 The top view which shows a module. (Example 2) Block diagram and perspective view of television apparatus (Example 4) FIG. 14 illustrates an example of an electronic device. (Example 5) An example of sectional drawing which shows the structure of this invention. (Example 6) FIG. 11 is a perspective view illustrating an application example of a semiconductor device. (Example 6) Sectional drawing which shows a prior art example.

Explanation of symbols

10, 1008, 1100, 3010 Substrate 11, 201, 301, 3011 Underlying insulating film 12 First conductive layer 13, 23, 33, 34, 43 Insulating film 15, 205, 305, 1005, 1007 Optical system 16, 46 Through Openings 17, 37 Closed holes 18, 28, 38, 48 Droplet discharge means 19, 29, 39, 49 Second conductive layer 26, 36, 541, 542, 543, 544 Opening 101 Ultrashort optical pulse laser Oscillator 102 Mirror 103 Objective lens 104 Sample 105 XYZ stage 200, 300 Substrate 202 with insulating surface First insulating film 203, 204, 209 Wiring 206 Conductive semiconductor layer 207 Island-like semiconductor layer 208, 308 Inkjet head 210 309 A plurality of first openings 211 Interlayer insulating films 212 and 31 including a protective film 0, 311 A plurality of second openings 213 Connection wirings 214, 215 Gate wiring 216 Third opening 302 Region 303 where no impurity element is added Gate insulating films 304, 306, 307 Impurity regions 312, 315 Source electrode or drain electrode 313, 314 Gate electrode 316 Insulating film 317 Pixel electrode 318 First electrode 319 Flat interlayer insulating film 320, 322 Alignment film 321 Liquid crystal 323 Counter substrate 324 Counter electrode 330 Organic compound layer 331 Partition 332 Second electrode 333 Transparent filler 334 Sealing substrate 500 Semiconductor substrate 503, 504, 505 Field oxide film 506 Gate electrode 508 Gate insulating film 510, 511, 512, 513 Side wall 514, 516 Source region 515, 517 Drain region 518, 519, 5 0,521 Low-concentration impurity region 545 First interlayer insulating film 551, 552, 553, 554, 562, 563, 564, 565 Conductive film 561 Second interlayer insulating film 1001 Laser beam drawing apparatus 1002 Personal computer 1003 Laser oscillator 1004 Power supply 1006 Acousto-optic modulator 1009 Substrate moving mechanism 1010 D / A conversion unit 1011, 1012 Driver 1103 Droplet ejection unit 1104 Imaging unit 1105 Head 1107 Control unit 1108 Storage medium 1109 Image processing unit 1110 Computer 1111 Marker 1112 Head 1113, 1114 Material Supply source 1516 IC chip 1517 Conductive layer 1518 Card-like substrate 2101, 2201, 2401, 2701 Main body 2102 Display portions 2104, 2406, 2706 a, 2706 b, 2706c Operation key 2106 Shutter 2202, 2402, 2702 Housing 2203, 2703a, 2703b Display unit 2204 Keyboard 2205 External connection port 2206 Pointing mouse 2403 Display unit A
2404 Display B
2405 Recording medium reading unit 2407 Speaker unit 2704 Audio input unit 2705 Audio output unit 2708, 9304 Antenna 3012 Conductive layer 3013 Insulating film 3014 Mask 3016 Opening 3017a, 3017b Wiring 3018 Material moving direction 9210 Wireless chip 9301, 9302 Cover material 9303 Thin film integration Circuit 9305 Adhesive 9311 Interlayer insulating film 9312 Barrier film 9501 Display panel 9502 Circuit board 9503 Connection wiring 9504 Control circuit 9505 Signal dividing circuit 9506 Pixel portion 9507 Scan line driving circuit 9508 Signal line driving circuit 9511 Tuner 9512 Video detection amplification circuit 9513 Video signal Processing circuit 9514 Control circuit 9515 Display panel 9516 Scan line driving circuit 9517 Signal line driving circuit 9518 Signal dividing circuit 95 1 sound detection circuit 9522 the audio signal processing circuit 9523,9533 speaker 9524 control circuit 9525 input 9531 housing 9532 display screen 9534 operation switches

Claims (2)

Forming a first conductive layer;
Forming an insulating film on the first conductive layer;
By irradiating the insulating film with laser light, an opening reaching the first conductive layer is formed,
More droplet discharge method, the insulating film and in the opening, forming a second conductive layer electrically connected to the first conductive layer through the opening,
The second conductive layer has a first region, a second region, and a third region in the opening,
The insulating film has a fourth region;
Having the first region on the first conductive layer;
A fourth region before SL on the first region,
Said first conductive layer, have a said second region and the third region sandwiched between the first region and the fourth region,
The first region extends in a direction parallel to the surface of the first conductive layer so as to connect the second region and the third region;
The second region and the third region are present extending in a direction perpendicular to the surface of the first conductive layer,
The second conductive layer is formed by discharging a composition containing conductive particles in one of the second region or the third region, and from the other of the second region or the third region. A method for manufacturing a semiconductor device, which is performed while extruding gas inside an opening . In claim 1 ,
The laser light is oscillated with a pulse width of 1 femtosecond or more and 10 picoseconds or less.

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