JP5076306B2 - LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - Google Patents

Description

The present invention relates to a structure of a light emitting device having a light emitting layer formed of various light emitting materials such as an organic EL (ElectroLuminescent) material.

2. Description of the Related Art Conventionally, an active matrix light emitting device using a switching element (typically a transistor) for controlling light emission by a light emitting layer has been proposed. This type of light emitting device includes a switching element formed on a surface of a substrate, an insulating layer covering the switching element, a first electrode and a second electrode formed on the surface of the insulating layer, and a gap between both electrodes. A light emitting layer interposed between the light emitting layer and the light emitting layer. The first electrode is electrically connected to the electrode (drain electrode or source electrode) of the switching element through a contact hole formed in the insulating layer (for example, Patent Document 1).
).
JP 2002-318556 A

However, in this configuration, external light such as sunlight or illumination light passes through the contact hole of the insulating layer and reaches the electrode of the switching element, and reflected light on the surface (hereinafter referred to as “unnecessary reflected light”) is observed May be emitted to the side. Since the unnecessary reflected light has different characteristics (for example, light quantity and spectral characteristics) from the light emitted from the light emitting layer, the light quantity in the plane of the light emitting device (
(Luminance) variation.

Further, for example, in the configuration in which the light emitting layer is formed so as to enter not only the surface of the insulating layer but also the inside of the contact hole, light (hereinafter referred to as the light emitting layer from the portion along the inner peripheral surface of the contact hole). "Unnecessary radiation" is emitted. However, since the film thickness is different between the part of the light emitting layer located on the surface of the insulating layer and the part entering the inside of the contact hole, the emitted light from the former part and the unnecessary radiation emitted from the latter part And the light quantity and spectral characteristics are different. Therefore, unnecessary radiated light in this configuration can also cause variations (unevenness) in the amount of light in the plane of the light emitting device.

As described above, in the configuration in which the switching element and the first electrode are electrically connected through the contact hole of the insulating layer, unnecessary reflected light from the electrode located on the bottom surface of the contact hole or the inside of the contact hole has entered. There is a problem that unevenness occurs in the amount of light due to unnecessary radiation from the light emitting layer (the uniformity of light emission is impaired). Against this background, an object of the present invention is to solve the problem of suppressing unevenness in the amount of light caused by contact holes in an insulating layer.

In order to solve this problem, a light emitting device according to the present invention includes a switching element (for example, the drive transistor Tdr in FIG. 2) formed on the surface of the substrate and an insulating layer (for example, the first transistor in FIG. 3) covering the switching element. 2 insulating layer 42) and a first insulating layer formed on the surface of the insulating layer and electrically connected to the switching element via a contact hole (for example, contact hole CH in FIGS. 2 and 3) of the insulating layer. An electrode, a second electrode formed on the opposite side of the substrate across the first electrode, and a space between the first electrode and the second electrode and entering the space inside the contact hole A light-shielding body including a light-emitting layer and a portion that is disposed on the emission side of the emitted light from the light-emitting layer with respect to the insulating layer and overlaps the contact hole when viewed from a direction perpendicular to the substrate (for example, each implementation) Comprising an auxiliary wiring 70 and the light-shielding layer 81) and the state.

In this configuration, the light shield that overlaps the contact hole is arranged on the emission side (observation side) of the emitted light by the light emitting layer. Therefore, external light such as sunlight and illumination light is blocked by the light shielding body, and therefore does not reach the contact hole or the switching element (particularly, the electrode).
Even if external light passes through the contact hole and reaches the switching element, unnecessary reflected light on the surface is blocked by the light shield.

Further, in this configuration, since the light emitting layer is configured to enter the inside of the contact hole, an insulating member that enters the contact hole and fills the recess is not necessary in principle. Therefore, there are advantages that the manufacturing process of the light emitting device can be simplified and the manufacturing cost can be reduced. On the other hand, in the configuration in which the light emitting layer enters the inside of the contact hole as in the present invention, unnecessary radiation is emitted from the portion of the light emitting layer along the inner peripheral surface of the contact hole. Blocked by the body. As described above, according to the present invention, not only unnecessary reflected light but also unnecessary radiated light is prevented from being emitted to the observation side. Therefore, unevenness in the amount of light caused by the contact hole can be suppressed.

In the present invention, the “radiation side of the emitted light from the light emitting layer with respect to the insulating layer” means the side on which the emission of the emitted light from the light emitting layer is originally scheduled. For example, in a bottom emission type light emitting device in which the first electrode has light transmittance, the substrate side corresponds to the “radiation side of the emitted light by the light emitting layer” as viewed from the insulating layer. Further, in the top emission type light emitting device in which the second electrode is light transmissive, the side opposite to the substrate as viewed from the insulating layer corresponds to the “emission side of the emitted light by the light emitting layer”. Further, for example, when attention is paid to the use of the light emitting device, for example, when the light emitting device is used as a display device, the observation side (that is, the side on which an observer who visually recognizes the display image by the light emitting device) is located with respect to the insulating layer. When the light emitting device is used as an exposure device (exposure head) that exposes a photosensitive member such as a photosensitive drum, it corresponds to “the emission side of the emitted light by the light emitting layer”. This corresponds to the “radiation side of emitted light by the light emitting layer”.

A typical example of the configuration in which the light emitting layer enters the space inside the contact hole is an aspect in which the light emitting layer is continuously distributed over a plurality of pixels (each including a switching element and a first electrode). According to this aspect, since a mechanism for dividing the light emitting layer for each pixel (for example, a partition wall that partitions the space on the substrate for each pixel) is not required, the manufacturing process of the light emitting device can be simplified and the manufacturing cost can be reduced. Can be realized.

If the light reflectance of the light shield is higher than that of the electrode of the switching element, the non-uniformity of light emission caused by the contact hole is certainly eliminated, but now the reflected light of the external light on the light shield becomes the light emission uniformity. There is also the possibility of impact. Therefore, in a preferred aspect of the present invention, the switching element includes an electrode (for example, the drain electrode 34 in FIGS. 2 and 3) whose portion exposed from the insulating layer through the contact hole is in contact with the first electrode, Is formed of a material having a light reflectance lower than that of the electrode of the switching element. According to this configuration, since the light shielding body is formed of a material having a light reflectance lower than that of the electrode of the switching element, both the influence of the reflected light in the contact hole and the influence of the reflected light in the light shielding body are eliminated to emit light. Can improve the uniformity.

When the resistance value of the second electrode is high, the uniformity of light emission in the light emitting layer may be impaired due to the voltage drop in the second electrode. The second electrode is ITO (Indium Tin Oxide) or IZ
In a configuration (top emission type) formed of a high resistance material such as O (Indium Zinc Oxide) or a configuration in which the second electrode is continuously distributed over a wide range, the voltage drop at the second electrode is particularly noticeable. The non-uniformity of emission is even more serious.
Therefore, in a preferred aspect of the present invention, auxiliary wiring that is formed of a conductive material having a lower resistivity than the second electrode and is electrically connected to the second electrode is used as a light shielding body. According to this aspect, since the voltage drop is suppressed by the auxiliary wiring conducted to the second electrode, the non-uniformity of light emission due to the voltage drop in the plane of the second electrode is suppressed. Specific examples of this aspect are the first embodiment (FIGS. 2 and 3), the second embodiment (FIGS. 5 and 6), and the fifth embodiment (FIG. 1).
1 and FIG. 12).

In the above, the configuration in which the auxiliary wiring is also used as the light shielding body is illustrated. However, in the present invention, a configuration in which the auxiliary wiring is formed separately from the light shielding body is also employed. In this latter configuration, no particular problem occurs if the auxiliary wiring is formed of a material having good light transmittance. However, in order to satisfy the condition that the resistivity is lower than that of the second electrode,
In many cases, a light-shielding conductive material must be adopted as the material of the auxiliary wiring. Then, in the configuration in which the light shielding auxiliary wiring is formed separately from the light shielding body, the aperture ratio (the actual light in the region where the pixels are distributed) is larger than the configuration in which the auxiliary wiring is not formed. There is a problem that the ratio of the area to be emitted is reduced. On the other hand, according to the aspect in which the auxiliary wiring is also used as the light shielding body as exemplified above, there is an advantage that the aperture ratio is improved as compared with the configuration in which the auxiliary wiring is formed independently from the light shielding body. . In addition, an increase in the aperture ratio means that the electrical energy to be supplied to the light emitting layer in order to emit the desired amount of light from the light emitting device is reduced. Since the light emitting layer (especially organic EL material) deteriorates in characteristics as the higher electric energy is supplied, the aperture ratio is restricted by the auxiliary wiring according to this aspect in which the electric energy supplied to the light emitting layer can be reduced. In comparison with the configuration, there is an advantage that the lifetime of the light emitting layer (the length of time until the characteristic values such as the light emission amount and the light emission efficiency are reduced to a predetermined value) can be prolonged.

In an aspect in which the auxiliary wiring is used as a light shield, the auxiliary wiring overlaps with the entire region (opening region) surrounded by the inner peripheral edge of the contact hole when viewed from the direction perpendicular to the substrate. According to this aspect, it is possible to increase the proportion of unnecessary reflected light and unnecessary radiated light caused by the contact hole that is blocked by the light shield. A specific example of this aspect is the first embodiment (
This will be described later as FIGS. In the case where the light shielding body (auxiliary wiring) is formed by a film forming technique such as vapor deposition using a mask, even if an attempt is made to form the light shielding body so as to overlap the entire opening area of the contact hole, There may be an error in the position of the light shield due to variations (mask misalignment). Even if a part of the opening area does not overlap with the light shielding body due to an error in this way, the design of the “contact hole inner peripheral edge” is not necessary as long as the light shielding body overlaps with the entire opening area in design. It can be said that the requirement of “overlapping the entire enclosed area” is satisfied.
However, the auxiliary wiring may be configured to overlap only a part of the region (for example, the region A1 in FIG. 6) surrounded by the inner periphery of the contact hole when viewed from the direction perpendicular to the substrate.
In this configuration, more preferably, a light shielding layer including a portion that overlaps a region that does not overlap with the auxiliary wiring (for example, the region A2 in FIG. 6) in the region surrounded by the inner periphery of the contact hole is further disposed. According to this configuration, unnecessary reflected light and unnecessary radiated light that are not blocked by the auxiliary wiring are blocked by the light shielding layer. Therefore, similarly to the aspect in which the auxiliary wiring is formed so as to overlap with the entire opening of the contact hole, it is possible to increase the ratio of unnecessary reflected light and unnecessary radiated light caused by the contact hole that is blocked by the light shield. . A specific example of this aspect will be described later as, for example, a second embodiment (FIGS. 5 and 6).

In the above, the configuration in which the auxiliary wiring is also used as the light shielding body is illustrated, but a configuration in which the auxiliary wiring is arranged separately from the light shielding body is also employed. If the auxiliary wiring has light reflectivity under this aspect, the uniformity of light emission may be impaired by reflected light (external light) on the surface of the auxiliary wiring. Therefore, in a more preferred aspect, the light shield overlaps the auxiliary wiring as viewed from the direction perpendicular to the substrate. According to this aspect, since the reflected light on the surface of the auxiliary wiring as well as unnecessary reflected light and unnecessary radiated light in the contact hole is blocked by the light shielding body, it is possible to maintain the uniformity of light emission. In other words, even when a light-reflective conductive material is adopted as the auxiliary wiring material, the non-uniformity of light emission is not hindered, so that it is possible to expand the scope for selecting the auxiliary wiring material. There is. A specific example of this aspect will be described later as, for example, a third embodiment (FIGS. 7 and 8) and a fourth embodiment (FIGS. 9 and 10).

In another aspect of the present invention, the light shielding body extends in a predetermined direction, and the contact hole is formed in a shape having a predetermined direction as a longitudinal direction when viewed from a direction perpendicular to the substrate. According to this aspect, since the area of the contact hole is sufficiently ensured, the resistance at the contact portion between the first electrode and the switching element can be reduced, or the certainty of conduction between the two can be improved.

The light emitting device of the present invention is applied to both a top emission type and a bottom emission type. In the top emission type light emitting device, the second electrode transmits the light emitted from the light emitting layer. In the bottom emission type light emitting device, the first electrode transmits light emitted from the light emitting layer. In a preferred embodiment of the bottom emission type light emitting device, the switching element includes an electrode (for example, the drain electrode 34 in FIGS. 11 and 12) whose portion exposed from the insulating layer through the contact hole is in contact with the first electrode, The light shielding member is formed between the electrode of the switching element and the substrate by a material having a light reflectance lower than that of the electrode of the switching element, and faces the electrode. Also according to this aspect, since the reflected light at the electrode of the switching element is blocked by the light shielding body, the uniformity of light emission can be maintained. A specific example of the bottom emission type light emitting device will be described later as a fifth embodiment (FIGS. 11 and 12).

Note that the bottom emission type light-emitting device exemplified above also employs a configuration in which the auxiliary wiring is also used as a light shielding body. In this configuration, the auxiliary wiring is electrically connected to the second electrode through a contact hole (for example, contact hole CH5 in FIG. 11) in the insulating layer. Further, it is desirable that the light shield is made of the same material as the elements constituting the switching element (for example, the gate electrode 242 in FIGS. 11 and 12). According to this aspect, since the electrode of the switching element and the light shielding body can be collectively formed in one process by patterning a single conductive film, the light shielding body is formed in a process separate from the switching element. Compared with the case where it manufactures, simplification of a manufacturing process and reduction of manufacturing cost are achieved.

The light emitting device according to the present invention is used in various electronic devices. A typical example of this electronic device is a device that uses a light emitting device as a display device. Examples of this type of electronic device include a personal computer and a mobile phone. However, the use of the light emitting device according to the present invention is not limited to image display. For example, the light emitting device of the present invention can also be applied as an exposure device (exposure head) for forming a latent image on an image carrier such as a photosensitive drum by irradiation of light.

<A: First Embodiment>
FIG. 1 is a block diagram showing an electrical configuration of the light emitting device according to the first embodiment of the present invention. The light emitting device D is a display device that is mounted on various electronic devices and displays an image.
As shown in FIG. 2, the plurality of selection lines 11 extending in the X direction and the plurality of signal lines 13 extending in the Y direction orthogonal to the X direction are included. A pixel P is disposed at each intersection of the selection line 11 and the signal line 13. Therefore, these pixels P are arranged in a matrix over the X direction and the Y direction within a predetermined region (hereinafter referred to as “light emitting region”).

One pixel P includes a light emitting element E that emits light by supplying a current, and a drive transistor Tdr and a selection transistor Tsl for controlling the current supplied to the light emitting element E. The light emitting element E is an element in which a light emitting layer 66 made of an organic EL material is interposed between a first electrode 61 and a second electrode 62. The light emitting layer 66 emits light with luminance (light quantity) corresponding to the current flowing from the first electrode 61 to the second electrode 62.

The drive transistor Tdr is a switching element for controlling the amount of current supplied to the light emitting element E, and the source electrode is connected to the power supply line 15. The power supply line 15 is supplied with the higher power supply potential Vdd. A capacitive element C for holding the potential of the gate electrode of the drive transistor Tdr is interposed between the gate electrode and the source electrode of the drive transistor Tdr. The drain electrode of the drive transistor Tdr is connected to the first electrode 61 of the light emitting element E. The lower power supply potential Gnd is supplied to the second electrode 62 of the light emitting element E through the auxiliary wiring 70. In addition,
The operation of the auxiliary wiring 70 and its specific form will be described later.

On the other hand, the selection transistor Tsl is a switching element that is interposed between the gate electrode of the driving transistor Tdr and the signal line 13 and controls the electrical connection between them. The gate electrode of the selection transistor Tsl is connected to the selection line 11. In this embodiment, the drive transistor Tdr is a p-channel type and the selection transistor Tsl is an n-channel type. However, each conductivity type can be arbitrarily changed.

The selection signal supplied to the selection line 11 transits to the active level and the selection transistor Tsl
Changes to the ON state, the data potential Vdata corresponding to the gradation specified for the pixel P is changed to the signal line 1.
3 is supplied to the gate electrode of the drive transistor Tdr via the selection transistor Tsl. At this time, the charge corresponding to the data potential Vdata is accumulated in the capacitive element C, so that the selection line 1
Even when 1 changes to the inactive level and the selection transistor Tsl changes to the off state, the gate electrode of the drive transistor Tdr is maintained at the data potential Vdata. A current corresponding to the potential of the gate electrode of the drive transistor Tdr (that is, a current corresponding to the data potential Vdata) is supplied to the light emitting element E. By supplying this current, the light emitting element E emits light with luminance (light quantity) corresponding to the data potential Vdata.

Next, FIG. 2 is a plan view showing a specific configuration of one pixel P, and FIG. 3 is a cross-sectional view taken along line III-III in FIG. Although FIG. 2 is a plan view, each element common to FIG. 3 is hatched in the same manner as FIG. 3 in order to facilitate understanding of each element. The same applies to plan views (FIGS. 5, 7, 9, and 11) according to the following embodiments. In FIG. 2, the light emitting layer 66 and the second electrode 62 of FIG. 1 are omitted for convenience.

As shown in FIG. 3, each element in FIG. 1 such as the drive transistor Tdr and the light emitting element E is a substrate 1.
Formed on zero surface. The board | substrate 10 is a plate-shaped member which shape | molded various insulating materials, such as glass and a plastic, in the substantially rectangular shape. The elements of each pixel P may be formed using an insulating film body (for example, a film body such as silicon oxide or silicon nitride) covering the substrate 10 as a base. Below,
The side on which the driving transistor Tdr and the light emitting element E are formed as viewed from the substrate 10 (that is, the upper side in FIG. 3) is referred to as “observation side”. That is, the “observation side” is the side of the observer who visually recognizes the image displayed by the light emitting device D.

As shown in FIGS. 2 and 3, the drive transistor Tdr includes a semiconductor layer 31 formed on the surface of the substrate 10, a gate insulating layer 40 formed on the entire surface of the substrate 10 and covering the semiconductor layer 31,
A gate electrode 242 that faces the semiconductor layer 31 with the gate insulating layer 40 interposed therebetween, and a source electrode 33
And a drain electrode 34. The semiconductor layer 31 is a film body formed in a substantially rectangular shape by a semiconductor material such as silicon.

As shown in FIG. 2, the intermediate conductor 24 is formed on the surface of the gate insulating layer 40. A portion of the intermediate conductor 24 that extends in the X direction and overlaps the semiconductor layer 31 is a gate electrode 242.
It is. As shown in FIG. 3, the semiconductor layer 31 includes the gate electrode 24 with the gate insulating layer 40 interposed therebetween.
2 and a source region 31s and a drain region 31d sandwiching the channel region 31c.

As shown in FIG. 3, the surface of the substrate 10 on which the semiconductor layer 31 and the gate electrode 242 (intermediate conductor 24) are formed is covered with the first insulating layer 41 over the entire area. The source electrode 33 and the drain electrode 34 are formed on the surface of the first insulating layer 41. As shown in FIG. 2, the source electrode 33 is a portion of the power supply line 15 extending in the X direction, and the source electrode 33 is formed on the semiconductor layer 31 through a contact hole CH1a that penetrates the first insulating layer 41 and the gate insulating layer 40. It conducts to the source region 31s.

The drain electrode 34 is formed in a shape in which the first portion 341 and the second portion 342 are continuous. The first portion 341 is electrically connected to the drain region 31d of the semiconductor layer 31 through a contact hole CH1b that penetrates the first insulating layer 41 and the gate insulating layer 40. The second portion 342 is shown in FIG.
As shown in FIG.

As shown in FIG. 2, the intermediate conductor 24 includes an electrode portion 244 that overlaps the power supply line 15 and a wiring portion 246 that extends from the gate electrode 242 in the Y direction and intersects the power supply line 15. Electrode part 2
1 and the power supply line 15 face each other with the first insulating layer 41 interposed therebetween, so that the capacitive element C of FIG.

On the other hand, as shown in FIG. 2, the select transistor Tsl includes a semiconductor layer 51 formed on the surface of the substrate 10, a gate electrode 112 facing the channel region of the semiconductor layer 51 with the gate insulating layer 40 interposed therebetween, and a gate Drain electrode 5 formed on the surface of first insulating layer 41 covering electrode 112
3 and the source electrode 54. The gate electrode 112 is a portion that branches in the Y direction from the selection line 11 extending in the X direction and overlaps the semiconductor layer 51. The selection line 11 and the intermediate conductor 24 are collectively formed in the same process by patterning a common conductive film. Similarly, the drain electrode 53 and the source electrode 54, and the source electrode 33 (power supply line 1) of the driving transistor Tdr.
5) and the drain electrode 34 are formed in the same process by patterning a single conductive film.

The drain electrode 53 is electrically connected to the drain region of the semiconductor layer 51 through a contact hole CH2b penetrating the first insulating layer 41 and the gate insulating layer 40. Similarly, the source electrode 54 is
Conduction to the source region of the semiconductor layer 51 through the contact hole CH2a. The source electrode 54 is electrically connected to the wiring portion 246 of the intermediate conductor 24 through a contact hole CH3 penetrating the first insulating layer 41. As a result, the source electrode 54 of the selection transistor Tsl and the gate electrode 242 of the drive transistor Tdr are electrically connected.

As shown in FIG. 2, the signal line 13 in FIG. 1 extends in the Y direction in the lower layer of the power supply line 15 and intersects with the power supply line 15, and the gap between the power supply lines 15 in the Y direction. Wiring part 13 extending to
2 is included. The intersection 131 is formed of a conductive film that is common to the selection line 11 and the intermediate conductor 24. The wiring part 132 is formed of a conductive film common to the source electrode 33 and the drain electrode 34 of the transistor Tdr. The end portion 13 a of the wiring portion 132 is a contact hole C of the first insulating layer 41.
It conducts to the intersection 131 through H4a. Similarly, the end portion 13 b of the wiring portion 132 is electrically connected to the intersecting portion 131 through the contact hole CH 4 b of the first insulating layer 41. As described above, the signal line 13 is configured by electrical connection between each intersection 131 and each wiring part 132. The drain electrode 53 of the selection transistor Tsl is a portion overlapping the semiconductor layer 51 in the wiring portion 132.

As shown in FIG. 3, the surface of the first insulating layer 41 on which the power supply line 15 and the drain electrode 34 are formed is covered with the second insulating layer 42 over the entire area. The first insulating layer 41 and the second insulating layer 42 are
For example, it is formed of an insulating material such as silicon oxide or silicon nitride. As shown in FIGS. 2 and 3, a portion of the second insulating layer 42 that overlaps the second portion 342 of the drain electrode 34 when viewed from the direction perpendicular to the substrate 10 penetrates the second insulating layer 42 in the thickness direction. A contact hole CH to be formed is formed. Accordingly, the second portion 342 is exposed from the second insulating layer 42 through the contact hole CH. When viewed from a direction perpendicular to the substrate 10 as shown in FIG. 2, the contact hole CH has a substantially rectangular shape with the X direction as the longitudinal direction.

On the surface of the second insulating layer 42 (surface other than the contact hole CH), a substantially rectangular reflective layer 44 is formed.
Are formed so as to be separated from each other for each pixel P. The reflective layer 44 is a film body formed of a light-reflective material such as an alloy such as aluminum or silver or an alloy containing these as a main component, and emits light from the light emitting layer 66 toward the substrate 10 side (on the observation side). Reflected upward in FIG. further,
On the surface of the second insulating layer 42, first electrodes 61 (see FIG. 1) that function as the anode of the light emitting element E are formed so as to be separated from each other for each pixel P. The first electrode 61 is a substantially rectangular electrode that covers the reflective layer 44, and is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). As shown in FIGS. 2 and 3, the first electrode 61
Enters the contact hole CH of the second insulating layer 42 and contacts the drain electrode 34 (second portion 342) of the drive transistor Tdr. By this contact, the first electrode 61 and the drive transistor Tdr are electrically connected.

The first electrode 61 is formed to have a sufficiently thin film thickness with respect to the outer dimension of the contact hole CH by various film forming techniques such as sputtering and vacuum deposition. Therefore, as shown in FIG. 3, the first electrode 61 is formed with a recess (indentation) 611 reflecting the thickness of the second insulating layer 42 and the outer shape of the contact hole CH. That is, the portion of the first electrode 61 that contacts the drain electrode 34 corresponds to the bottom surface portion of the recess 611, and the portion of the first electrode 61 that covers the inner peripheral surface of the contact hole CH corresponds to the side surface portion of the recess 611. .

The light emitting layer 66 in FIG. 1 is formed on the surface of the second insulating layer 42. In FIG. 1, the light emitting layer 66
Is shown for each pixel P for convenience, but the actual light emitting layer 66 is formed over the entire area of the substrate 10 so as to be continuously distributed over a plurality of pixels P as shown in FIG. Electrode 61
Cover. Since the first electrodes 61 are formed so as to be separated from each other for each pixel P, the light emitting layer 66 is formed.
Is continuous over a plurality of pixels P, the amount of light emitted from the light emitting layer 66 is individually controlled for each pixel P.

According to the configuration in which the light emitting layer 66 is continuously distributed over the plurality of pixels P as in the present embodiment, the light emitting layer 66 of each pixel P can be collectively formed in one process. In addition, the light emitting layer 66 can be formed by a method that is cheaper than other film forming techniques such as a printing technique typified by a spin coating method. In addition, it is not necessary to form a mechanism for partitioning the light emitting layer 66 for each pixel P (for example, a partition wall formed in a lattice shape on the surface of the substrate 10).
Therefore, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with the configuration in which the light emitting layer 66 is divided for each pixel P. Note that the light emitting layer 66 may be formed of either a high molecular material or a low molecular material. In addition, various functional layers (a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a hole block layer, and an electron block layer) for promoting or improving the light emission by the light emitting layer 66 are the light emitting layer. The structure laminated | stacked on 66 is also employ | adopted.

As shown in FIG. 3, the portion of the light emitting layer 66 that overlaps the contact hole CH is the first
It enters the inside of the recess 611 of the electrode 61 (the space inside the contact hole CH) and contacts the inner peripheral surface and the bottom surface of the recess 611. Since the light emitting layer 66 is formed to have a sufficiently thin film thickness as compared with the outer dimension of the contact hole CH, the surface of the light emitting layer 66 has a recess (dent) reflecting the step of the recess 611 of the first electrode 61. appear.

As shown in FIG. 3, the second electrode 62 is an electrode that covers the light emitting layer 66 while being distributed continuously over the entire area of the substrate 10. The second electrode 62 of the present embodiment is formed of a light transmissive conductive material such as ITO or IZO. Therefore, the light emitted from the light emitting layer 66 to the opposite side of the substrate 10 and the light emitted from the light emitting layer 66 toward the substrate 10 and reflected by the surface of the reflective layer 44 are transmitted through the second electrode 62 and observed. To the side. That is, the light emitting device D of the present embodiment has the light emitting element E.
Is a top emission type in which the emitted light is emitted to the opposite side of the substrate 10.

Since most of the light-transmitting conductive materials have high resistivity, the second electrode 62 formed of this kind of material has a high resistance, and the voltage drop in the surface becomes remarkable. Therefore,
The potential supplied to each light emitting element E differs depending on the position in the plane of the second electrode 62, and as a result, unevenness in the amount of light in the light emitting region (unevenness in brightness and gradation) may occur.

In order to eliminate this variation in the amount of light, in this embodiment, an auxiliary wiring 70 for assisting the conductivity of the second electrode 62 is formed. The auxiliary wiring 70 is formed of a conductive material having a lower resistivity than the second electrode 62. The auxiliary wiring 70 of this embodiment is formed so as to be in contact with the surface of the second electrode 62 and is electrically connected to the second electrode 62. According to this configuration, since most of the current flows through the low-resistance auxiliary wiring 70, a voltage drop at the second electrode 62 is suppressed. Therefore, the potential supplied to each light emitting element E is made uniform, and as a result, unevenness in the amount of light due to the voltage drop can be effectively suppressed. The auxiliary wiring 70 of this embodiment is formed of a light shielding conductive material. More preferably, the auxiliary wiring 70 is formed of a material having a light reflectance lower than that of the drain electrode 34.

FIG. 4 is a plan view illustrating a specific form of the auxiliary wiring 70 in the present embodiment. In the drawing, the outer shape of each first electrode 61 is also shown by a broken line. As shown in FIG. 4, the auxiliary wiring 70 includes a plurality of first portions 71 extending in the X direction corresponding to each row of the pixels P, and a plurality of extending in the Y direction corresponding to each column of the pixels P. The second portion 72 is formed into a lattice shape intersecting with the second portion 72. However, the shape of the auxiliary wiring 70 is not limited to the example of FIG. For example, it is good also as a shape containing only the some 1st part 71 extended in a X direction.

The first portion 71 of the auxiliary wiring 70 is viewed from a direction perpendicular to the substrate 10 as shown in FIG.
It overlaps with the contact hole CH of the second insulating layer 42. More specifically, the first portion 71 of the present embodiment is formed to have a width substantially equal to or wider than the width of the contact hole CH extending in the X direction (dimension in the Y direction). Therefore, as shown in FIGS. 2 and 3, the first portion 71 overlaps the entire region (hereinafter referred to as “open region”) surrounded by the inner periphery of the contact hole CH when viewed from the direction perpendicular to the substrate 10.

By the way, many of the conductive materials that can be adopted as the material of the drain electrode 34 of the drive transistor Tdr have light reflectivity. Therefore, in the conventional configuration in which the auxiliary wiring 70 is not formed, external light such as sunlight or illumination light reaches the surface of the drain electrode 34 from the observation side, and reflected light (unnecessary reflected light) on the surface is directed to the observation side. It may be emitted. Further, due to the difference between the characteristics of the unnecessary reflected light and the characteristics of the emitted light from the light emitting layer 66, there is a problem that the uniformity of the light amount in the surface of the light emitting region is impaired. On the other hand, in the present embodiment, the light-shielding auxiliary wiring 70 is formed so as to overlap the entire opening region of the contact hole CH. Accordingly, external light traveling from the observation side toward the drain electrode 34 is blocked at the surface of the auxiliary wiring 70 on the observation side. Even if external light reaches the drain electrode 34, unnecessary reflected light on the surface is blocked on the surface of the auxiliary wiring 70 on the substrate 10 side. As above
According to the present embodiment, unnecessary reflected light is prevented from being emitted to the observation side, so that the amount of light (luminance or gradation) in the surface of the light emitting region can be made uniform.

As shown in FIG. 3, a portion 661 of the light emitting layer 66 that covers the inner peripheral surface of the recess 611 of the first electrode 61 is between the first electrode 61 and the second electrode 62 in the same manner as the other portions. Intervene in.
Therefore, when driving each light emitting element E, light from the portion 661 (that is, unnecessary radiation)
Is emitted. However, since the characteristics (light quantity and spectral characteristics) of this unnecessary radiated light are different from the characteristics of the emitted light from the flat portion located on the surface of the second insulating layer 42 in the light emitting layer 66,
When unnecessary radiation is emitted to the observation side, the light emission uniformity of the light emitting device D is impaired. In addition, the light emitted from portions other than the portion 661 of the light emitting layer 66 and the unnecessary radiated light from the portion 661 interfere with each other, and as a result, the light emitted to the observation side may exhibit a specific color. There is also. In the present embodiment, since the auxiliary wiring 70 is formed so as to overlap with the contact hole CH, unnecessary radiation emitted from the recess 611 toward the observation side is blocked by the auxiliary wiring 70. As described above, according to the present embodiment, it is possible to block both unnecessary radiated light and unnecessary reflected light and make the light amount in the light emitting region uniform.

In the present embodiment, the configuration in which the auxiliary wiring 70 overlaps with the contact hole CH has been exemplified. However, as a configuration for realizing the above effect, for example, a light-shielding object (hereinafter referred to as “the auxiliary wiring 70”). A configuration in which the “light-shielding body” is formed so as to overlap the contact hole CH is also conceivable. In this configuration, the auxiliary wiring 70 is formed so as not to overlap with the contact hole CH (see, for example, FIGS. 8 and 10). However, in this configuration, both the contact hole CH and the auxiliary wiring 70 are regions that do not contribute to light emission (so-called dead spaces). Therefore, the aperture ratio of the light-emitting device D (the actual light-emitting region in which the pixels P are distributed) In other words, the ratio of the area where light is emitted is limited.
On the other hand, in the present embodiment, since the auxiliary wiring 70 is also used as a light shield for the contact hole CH, the aperture ratio can be increased as compared with the above configuration. Note that the fact that the aperture ratio can be increased in the present embodiment means that the electrical energy to be supplied to the light emitting layer 66 in order to radiate the desired amount of light from the light emitting device D is reduced. Since the deterioration of the characteristics of the light emitting layer 66 is promoted as higher electric energy is supplied, it can be said that according to the present embodiment, the life of the light emitting layer 66 is prolonged by increasing the aperture ratio.

Further, in order to ensure conduction between the drive transistor Tdr and the first electrode 61, it is desirable to ensure a sufficient area of the contact hole CH (that is, an area where the first electrode 61 and the drain electrode 34 are in contact). . However, when the area of the contact hole CH is enlarged under a configuration in which the auxiliary wiring 70 and the contact hole CH do not overlap, there is a problem that the aperture ratio is reduced by the enlarged amount. On the other hand, in the present embodiment, the auxiliary wiring 70 is formed so as to overlap with the contact hole CH. Therefore, if the area of the contact hole CH is enlarged within the region covered by the auxiliary wiring 70, the opening is increased. The rate does not decrease. Therefore, according to the present embodiment, the area of the contact hole CH can be sufficiently ensured by making the shape elongated in the X direction as shown in FIG. 2, and as a result, the drive transistor Tdr and the first electrode are secured. The resistance at the contact portion with 61 can be reduced.

<B: Second Embodiment>
Next, a second embodiment of the present invention will be described. In addition, the light-emitting device D of each form shown below
Among these, the same elements as those in the first embodiment are denoted by common reference numerals, and detailed description thereof is omitted as appropriate.

FIG. 5 is a plan view showing the configuration of the pixel P in the present embodiment, and FIG.
It is sectional drawing seen from the VI-VI line. In the first embodiment, the configuration in which the auxiliary wiring 70 is formed so as to overlap the entire opening region of the contact hole CH is exemplified. In contrast,
In the present embodiment, as shown in FIGS. 5 and 6, the auxiliary wiring 70 (first portion 71) is formed so as to overlap only the region A1 in the opening region of the contact hole CH. A region A2 in FIG. 6 is a region that does not overlap the auxiliary wiring 70 in the opening region.

As shown in FIG. 6, the light emitting device D in the present embodiment includes a substrate 80. This substrate 8
0 is a light-transmitting plate material for preventing adhesion of outside air or moisture to the light emitting element E, and is disposed so as to face the surface of the substrate 10 on which the light emitting element E is disposed. A light shielding layer 81 is formed on the surface of the substrate 80 facing the substrate 10. The light shielding layer 81 is a film body made of a light shielding material such as a resin colored black or a metal such as chromium. As shown in FIGS. 5 and 6, the light shielding layer 81 includes a portion that overlaps the region A <b> 2 in the opening region when viewed from the direction perpendicular to the substrate 10. The light shielding layer 81 of the present embodiment is the auxiliary wiring 7 illustrated in FIG.
Similar to 0, it is formed in a lattice shape corresponding to each pixel P, and its size and shape are selected so as to overlap the entire opening region of the contact hole CH. Therefore, the light shielding layer 81 overlaps the entire area of the auxiliary wiring 70. Further, the light shielding layer 81 of the present embodiment is formed of a material having a light reflectance lower than that of the drain electrode 34 and the auxiliary wiring 70.

According to this configuration, the light shielding layer 81 blocks unnecessary reflected light reflected on the surface of the drain electrode 34 and traveling in the region A 2 and unnecessary radiated light emitted from the portion 661 of the light emitting layer 66.
Therefore, even if the auxiliary wiring 70 covers only the region A1, the same operations and effects as those in the first embodiment are exhibited.

Further, in the present embodiment, a light shielding layer 81 formed of a material having a light reflectance lower than that of the auxiliary wiring 70 overlaps with the auxiliary wiring 70. In this configuration, external light from the observation side toward the auxiliary wiring 70 is blocked by the light shielding layer 81. Even if external light reaches the auxiliary wiring 70, the reflected light on the surface is blocked by the light shielding layer 81. Therefore,
Even if the auxiliary wiring 70 is formed of a material having a high light reflectance, the auxiliary wiring 7
Unevenness in the amount of light in the light emitting region due to zero reflected light is suppressed. That is, according to this embodiment, it is possible to prevent the reflected light (unnecessary reflected light) from both the drain electrode 34 and the auxiliary wiring 70 from being emitted to the observation side.

As described above, according to the configuration in which the light shielding layer 81 is formed on the observation side when viewed from the auxiliary wiring 70, the influence of external light reflected on the surface of the auxiliary wiring 70 can be reduced. However, in the configuration in which the light emitting layer 66 enters the contact hole CH as in the fourth embodiment or the fifth embodiment, for example, unnecessary radiated light from the portion 661 is reflected on the back surface of the auxiliary wiring 70 (substrate 1
There is a possibility that the light is finally emitted to the observation side after being repeatedly reflected between the surface on the 0 side) and the drain electrode 342 and the reflective layer 44. From the viewpoint of preventing the emission of the unnecessary radiation light, between the auxiliary wiring 70 and the light emitting layer 66 (for example, the auxiliary wiring 70 and the second electrode 6 in FIGS. 9 and 10).
A configuration in which a light shielding body having a light reflectance lower than that of the auxiliary wiring 70 (in other words, a light shielding body having a light absorption rate higher than that of the auxiliary wiring 70) is preferably employed. According to this configuration, since unnecessary radiation emitted from the portion 661 of the light emitting layer 66 does not reach the back surface of the auxiliary wiring 70, it is possible to reliably prevent unevenness in light emission due to reflection of unnecessary radiation on the auxiliary wiring 70. Can do.

<C: Third Embodiment>
FIG. 7 is a plan view showing the configuration of the pixel P in the third embodiment of the present invention, and FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. In the first embodiment and the second embodiment, the configuration in which the auxiliary wiring 70 overlaps with the contact hole CH as viewed from the direction perpendicular to the substrate 10 is exemplified. On the other hand, as shown in FIGS. 7 and 8, the auxiliary wiring 70 of the present embodiment.
Does not overlap the open area.

As shown in FIG. 8, the auxiliary wiring 70 of the present embodiment is a portion of the light emitting layer 66 that does not overlap with the contact hole CH (a non-side region in the Y direction when viewed from the contact hole CH).
(Hereinafter referred to as “flat portion”) 663. Therefore, as shown in FIG. 7, when viewed from the direction perpendicular to the substrate 10, the auxiliary wiring 70 does not overlap the contact hole CH. Since the flat portion 663 is distributed on the surface of the second insulating layer 42, the flat portion 663 is flat compared to the portion of the light emitting layer 66 that overlaps the contact hole CH. The second electrode 62 is formed over the entire region of the light emitting layer 66 and covers the auxiliary wiring 70.

In the present embodiment, as in the second embodiment, the light shielding layer 81 is formed on the surface of the substrate 80. The light shielding layer 81 is formed of a light shielding material having a light reflectance lower than that of the drain electrode 34 and the auxiliary wiring 70. As shown in FIGS. 7 and 8, when viewed from the direction perpendicular to the substrate 10, the light shielding layer 81 overlaps both the contact hole CH and the auxiliary wiring 70. Therefore, also in this embodiment, it is possible to prevent the reflected light (unnecessary reflected light) from the drain electrode 34 and the auxiliary wiring 70 and unnecessary radiated light from the portion 661 of the light emitting layer 66 from being emitted to the observation side.

Incidentally, a step reflecting the shape (concave portion) of the contact hole CH may appear on the surface of each element (the light emitting layer 66 and the second electrode 62) formed so as to overlap the contact hole CH. Therefore, in the configuration in which the auxiliary wiring 70 is formed on the surfaces of these elements, there is a possibility that the auxiliary wiring 70 is disconnected or peeled off due to a step on the surface. On the other hand, in the present embodiment, the auxiliary wiring 70 is formed on the surface of the flat portion 661 out of the contact hole CH in the light emitting layer 66. Therefore, disconnection and peeling of the auxiliary wiring 70 can be effectively prevented.

<D: Fourth Embodiment>
FIG. 9 is a cross-sectional view showing the configuration of the pixel P in the fourth embodiment of the present invention, and FIG.
It is sectional drawing seen from the XX line in FIG. In the above third embodiment, the light shielding layer 8
1 illustrates the configuration in which the entire opening region of the contact hole CH is covered. On the other hand, the light shielding layer 81 of this embodiment is formed so as to cover the region A3 which is a part of the opening region and the auxiliary wiring 70, and does not cover the region A4 other than the region A3 in the opening region. Since the auxiliary wiring 70 is formed in the flat portion 663 of the light emitting layer 66 (position away from the contact hole CH), in this embodiment as well, as in the third embodiment, disconnection and peeling of the auxiliary wiring 70 are effectively prevented. can do.

As shown in FIG. 10, a part of the emitted light from the portion of the light emitting layer 66 that overlaps the contact hole CH (particularly, the portion that covers the bottom surface of the recess 611 of the first electrode 61) is indicated by an arrow L in FIG. Then, it passes through the region A4 and exits to the observation side. Therefore, according to the present embodiment, the aperture ratio can be increased by the area A4 as compared with the configuration of the third embodiment.

<E: Fifth Embodiment>
FIG. 11 is a plan view showing a configuration of a pixel P according to the fifth embodiment of the present invention, and FIG.
It is sectional drawing seen from the XII-XII line | wire in FIG. In each of the above embodiments, the top emission type light emitting device D is exemplified. On the other hand, the light emitting device D of the present embodiment is a bottom emission type. That is, as shown in FIG. 12, the reflective layer 44 described in the above embodiments.
Instead, the second electrode 62 is formed of a light-reflective conductive material. Therefore, the light emitted from the light emitting layer 66 to the substrate 10 side and the light emitted from the light emitting layer 66 to the opposite side of the substrate 10 and reflected by the surface of the second electrode 62 are transmitted through the first electrode 61 and the substrate 10. Then, the light is emitted downward in FIG.

Also in the present embodiment, the auxiliary wiring 70 is used as a light blocking body that prevents the reflected light from being emitted from the drain electrode 34, as in the first and second embodiments. However, in this embodiment, the substrate 10 side (the lower side in FIG. 12) is the observation side when viewed from the light emitting layer 66, so that the auxiliary wiring 70 is formed between the drain electrode 34 and the substrate 10 as shown in FIG. Is done. The auxiliary wiring 70 of the present embodiment is formed in the same process as the gate electrode 242 (or the selection line 11 or the intersection 131) by patterning a single conductive film formed over the entire area of the substrate 10. Therefore, the auxiliary wiring 70 is formed of the same material as the gate electrode 242. More preferably, the auxiliary wiring 7 is made of a conductive material having a light reflectance lower than that of the drain electrode 34.
0 and the gate electrode 242 are formed.

When viewed from the direction perpendicular to the substrate 10 as shown in FIG. 11, the auxiliary wiring 70 is connected to the drain electrode 34 (
More specifically, it overlaps with the opening region of the contact hole CH). The second electrode 62 is formed as shown in FIG.
As shown in FIG. 5, the auxiliary wiring 70 is electrically connected through a contact hole CH5 penetrating the first insulating layer 41 and the second insulating layer 42. According to this configuration, the observation side (lower side of FIG. 12)
Since the auxiliary wiring 70 blocks external light from the outside toward the drain electrode 34 and unnecessary reflected light reflected from the surface of the drain electrode 34 toward the observation side, the amount of light in the plane of the light emitting region can be made uniform.

In addition, the auxiliary wiring 70 of the present embodiment includes the gate electrode 242 (further, the selection line 11 and the intersection 1
31). According to this configuration, the formation of the conductive film used only for the formation of the auxiliary wiring 70 and the patterning thereof are not required. Therefore, the auxiliary wiring 70 is separated from other elements as in the above embodiments. Compared with the case where it is formed, the manufacturing process can be simplified and the manufacturing cost can be reduced. Further, in the present embodiment, it is not necessary to form the auxiliary wiring 70 on the surface of the organic material such as the light emitting layer 66, and further, the auxiliary wiring 70 is formed by a low resistance conductive material common to the gate electrode 242. The Therefore, there is an advantage that the resistance of the auxiliary wiring 70 can be easily reduced as compared with the configuration in which the auxiliary wiring 70 is formed on the surface of the light emitting layer 66.

In addition, although the bottom emission type light emitting device D has been illustrated above, the present embodiment is also applied to the top emission type. In the top emission type light emitting device D, the reflective layer 44 is interposed between the first electrode 61 and the substrate 10, and the second electrode 62 is formed of a light transmissive material. Under this configuration, as in the first embodiment, the aperture ratio does not decrease even if the area of the contact hole CH is enlarged as long as the area of the contact hole CH is within the range overlapping the auxiliary wiring 70. Therefore, the area of the contact hole CH is reduced. The resistance at the contact portion between the drive transistor Tdr and the first electrode 61 can be reduced sufficiently. Furthermore, in the top emission type light emitting device D in which the auxiliary wiring 70 is formed in the lower layer of the first electrode 61 as shown in FIGS. 14 and 15, for example, the auxiliary wiring 70 is formed of a light shielding material. Even the light emitting layer 6
The emitted light from 6 is not blocked by the auxiliary wiring 70. Therefore, there is an advantage that the aperture ratio can be improved.

<F: Modification>
Various modifications can be made to each of the above embodiments. An example of a specific modification is as follows. In addition, you may combine each following aspect suitably.

(1) In the configuration in which the light emitting layer 66 is continuous over a plurality of pixels P as exemplified in the above embodiments, the characteristics of the light emitted from the light emitting layer 66 are necessarily common to the plurality of pixels P. Accordingly, when displaying an image composed of a plurality of colors, for example, a configuration in which a color filter corresponding to each pixel P is formed on the surface of the substrate 80 is employed. In addition, a resonator structure that resonates the light emitted from the light emitting layer 66 between the first electrode 61 and the second electrode 62 is formed for each pixel P, and the resonator structure for each display color assigned to the pixel P is formed. Even with a configuration in which the resonance wavelengths are different, it is possible to display an image composed of a plurality of colors.

(2) In each of the above embodiments, the configuration in which the light shielding layer 81 is formed on the substrate 80 is illustrated, but the position where the light shielding layer 81 is formed is appropriately changed. For example, a configuration in which the light shielding layer 81 is formed on the surface of the second electrode 62 is also employed. Further, in the configuration in which the auxiliary wiring 70 is formed on the surface of the second electrode 62 (for example, the first embodiment or the second embodiment), the light shielding layer 81 may be formed on the surface of the auxiliary wiring 70.

(3) In the second embodiment (FIGS. 5 and 6), the configuration in which the light shielding layer 81 overlaps the region A2 that is not covered by the auxiliary wiring 70 in the opening region of the contact hole CH is exemplified.
The light shielding layer 81 in this configuration can be omitted as appropriate. In the configuration in which the light shielding layer 81 is not formed, unnecessary reflected light and unnecessary radiated light are emitted from the region A2 to the observation side. However, since the unnecessary reflected light and unnecessary radiated light in the region A1 are shielded by the auxiliary wiring 70, any light shielding body. Compared with the conventional configuration that does not overlap with the contact hole CH, the desired effect of suppressing unevenness in the amount of light in the light emitting region is certainly exhibited.

Further, even in the configuration in which the auxiliary wiring 70 is formed so as to overlap the entire opening region of the contact hole CH as in the first embodiment (FIGS. 2 and 3), unnecessary reflected light and unnecessary radiated light are further generated. In order to prevent it reliably, the light shielding layer 81 includes a portion overlapping with the contact hole CH.
May be arranged. Furthermore, in the configuration in which the light shielding layer 81 is formed so as to overlap at least a part of the contact hole CH (for example, the second embodiment to the fourth embodiment), the second
If the voltage drop at the electrode 62 does not matter, the auxiliary wiring 70 is omitted as appropriate.

As described above, in the present invention, the contact hole C is viewed from the direction perpendicular to the substrate 10.
A configuration in which a light-shielding object (light-shielding body) is arranged so as to overlap with H is sufficient, and a specific form of the light-shielding body (for example, the auxiliary wiring 70 or the light-shielding layer 81) or a material (for example, It does not matter whether it is conductive or insulating. However, from the viewpoint of surely preventing unevenness in the amount of light caused by the contact hole CH, a configuration in which the light shielding body is arranged over a wider range than the contact hole CH is preferable.

(4) In the fifth embodiment, the configuration in which the auxiliary wiring 70 is used for blocking unnecessary reflected light by the drain electrode 34 is illustrated, but unnecessary reflected light may be blocked by elements other than the auxiliary wiring 70. . For example, a light-shielding film body that is separate from the auxiliary wiring 70 may be formed between the drain electrode 34 and the substrate 10. The auxiliary wiring 70 in this configuration can be formed on the surface of the second electrode 62, for example, as in the first embodiment.

(5) In each of the above embodiments, the case where the light emitting layer 66 is formed of an organic EL material is exemplified, but the material of the light emitting layer 66 is appropriately changed. For example, the light emitting layer can be formed of an inorganic EL material. The light emitting layer in the present invention only needs to be formed of a light emitting material that emits light by application of electric energy.

<G: Application example>
Next, an electronic apparatus using the light emitting device according to the present invention will be described. FIG. 13 is a perspective view showing the configuration of a mobile personal computer that employs the light-emitting device D according to any one of the embodiments described above as a display device. The personal computer 2000 includes a light emitting device D as a display device and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002. Since the light emitting device D uses an organic EL material for the light emitting element E, it is possible to display an easy-to-see screen with a wide viewing angle.

FIG. 14 shows a configuration of a mobile phone to which the light emitting device D according to any of the embodiments is applied. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and a light emitting device D as a display device. By operating the scroll button 3002, the screen displayed on the light emitting device D is scrolled.

FIG. 15 shows a personal digital assistant (PDA: Personal) to which the light emitting device D according to any of the forms is applied.
Digital Assistants). The information portable terminal 4000 includes a plurality of operation buttons 40.
01, a power switch 4002, and a light emitting device D as a display device. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the light emitting device D.

Electronic devices to which the light emitting device according to the present invention is applied include those shown in FIGS. 13 to 15, digital still cameras, televisions, video cameras, car navigation devices, pagers, electronic notebooks, electronic papers, calculators. , Word processor, workstation,
Examples include a video phone, a POS terminal, a printer, a scanner, a copying machine, a video player, and a device equipped with a touch panel. Further, the use of the light emitting device according to the present invention is not limited to the display of images. For example, in an image forming apparatus such as an optical writing type printer or an electronic copying machine, a writing head that exposes a photosensitive member according to an image to be formed on a recording material such as paper is used. However, the light emitting device of the present invention is used.

It is a circuit diagram which shows the electrical constitution of the light-emitting device which concerns on 1st Embodiment of this invention. It is a top view which shows the structure of one pixel. It is sectional drawing seen from the III-III line in FIG. It is a top view which illustrates the form of auxiliary wiring. It is a top view which shows the structure of the pixel in 2nd Embodiment of this invention. It is sectional drawing seen from the VI-VI line in FIG. It is a top view which shows the structure of the pixel in 3rd Embodiment of this invention. It is sectional drawing seen from the VIII-VIII line in FIG. It is a top view which shows the structure of the pixel in 4th Embodiment of this invention. It is sectional drawing seen from the XX line in FIG. It is a top view which shows the structure of the pixel in 5th Embodiment of this invention. It is sectional drawing seen from the XII-XII line | wire in FIG. It is a perspective view which shows the specific form of the electronic device which concerns on this invention. It is a perspective view which shows the specific form of the electronic device which concerns on this invention. It is a perspective view which shows the specific form of the electronic device which concerns on this invention.

Explanation of symbols

D: Light emitting device, P: Pixel, E: Light emitting element, 10: Substrate, 11: Selection line, 13 ...
... Signal line, 15 ... Power line, 70 ... Auxiliary wiring, 40 ... Gate insulation layer, 41 ... First insulation layer, 42 ... Second insulation layer, 44 ... Reflection layer, 61 ... First Electrode, 62... Second electrode, 6
6: Light emitting layer, 80: Substrate, 81: Light shielding layer.

Claims (6)

A plurality of pixels provided on the substrate;
A switching element provided in each pixel;
An insulating layer covering the switching element;
A first electrode formed on a surface of the insulating layer and electrically connected to the switching element through a contact hole of the insulating layer;
A second electrode formed on the opposite side of the substrate with respect to the first electrode;
A light emitting layer provided continuously over the plurality of pixels, interposed between the first electrode and the second electrode and provided to enter a space inside the contact hole;
A conductive material is formed on the second electrode so as to be in contact with the second electrode, and includes a portion overlapping the whole of the contact hole when viewed from a direction perpendicular to the substrate, and having a lower resistivity than the second electrode. An auxiliary wiring formed and having a light shielding property;
A light emitting device comprising: The auxiliary line, as viewed from the direction perpendicular to the substrate, the light emitting device according to claim 1, characterized in that overlap the entire body region surrounded by the inner periphery of the contact hole. With the placed opposite substrate as the pixel of the substrate is surface opposite that provided, according to claim 1, characterized in that the light-shielding layer at a position overlapping with the contact hole in the counter substrate is provided or 2. The light emitting device according to 2 . The light-emitting device according to claim 3 , wherein the light shielding layer overlaps the auxiliary wiring when viewed from a direction perpendicular to the substrate. The auxiliary wiring and the light shielding layer extend in a predetermined direction,
5. The light emitting device according to claim 3 , wherein the contact hole is formed in a shape having the predetermined direction as a longitudinal direction when viewed from a direction perpendicular to the substrate.   An electronic apparatus comprising the light emitting device according to claim 1.

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