JP5075282B1 - Input device - Google Patents

Abstract

Provided is an input device capable of ensuring good invisible characteristics and good adhesion to a transparent substrate side, and in addition, improving the environmental resistance of bridge wiring.
A transparent substrate, a plurality of transparent electrodes formed on a first surface of the transparent substrate, a bridge wiring that electrically connects the transparent electrodes, and the transparent substrate and the bridge wiring. The bridge wiring 10 includes an underlayer 35 made of ITO in contact with the surface 20a of the insulating layer 20 and a lower layer formed on the surface of the underlayer 35 and lower than the underlayer 35. A resistive metal layer 36.
[Selection] Figure 3

Description

  The present invention relates to an input device that can detect an operation position on an operation surface, and more particularly to a configuration of a bridge wiring that connects between transparent electrodes formed on the surface of a transparent substrate.

  Patent Document 1 discloses an input device in which a bridge wiring (described in Patent Document 1 as an intersection portion and a relay electrode) that electrically connects a plurality of transparent electrodes is formed of ITO.

  Patent Document 2 discloses an input device in which a bridge wiring for electrically connecting a plurality of transparent electrodes is formed of Mo, Al, Au, or the like.

  An insulating layer is interposed between the transparent base material forming the transparent electrode forming surface and the bridge wiring. That is, the bridge wiring is electrically connected between the transparent electrodes through the surface of the insulating layer.

JP 2008-310550 A JP 2010-271796 A

  In Patent Document 1, the bridge wiring is made of ITO, and there is a problem that the wiring resistance of the bridge wiring is increased.

  Further, as in Patent Document 2, by forming the bridge wiring with a metal material, the wiring resistance of the bridge wiring can be made lower than that formed with ITO, but good invisible characteristics, that is, the bridge wiring must not be visible. It was necessary to ensure good adhesion with the insulating layer constituting the bridge wiring formation surface. In addition, it was necessary to improve the environmental resistance (humidity resistance and heat resistance) of the bridge wiring.

  In particular, when a low-resistance metal having poor adhesion to the insulating layer is used, it is necessary to ensure good adhesion as well as good invisible characteristics.

  As shown in the experiment described later, the present inventors selected Au as a low-resistance metal, for example. However, in Patent Documents 1 and 2, when Au is used as a bridge wiring, particularly with good invisible characteristics. A structure for ensuring good adhesion with the insulating layer is not disclosed.

  Therefore, the present invention is for solving the above-mentioned conventional problems, and in particular, it is possible to ensure good invisible characteristics and good adhesion to the transparent substrate side, and in addition, improve the environment resistance of the bridge wiring. An object of the present invention is to provide an input device that can be made to operate.

The input device according to the present invention includes a transparent substrate, a plurality of transparent electrodes formed on the first surface of the transparent substrate, a bridge wiring that electrically connects the transparent electrodes, and the transparent substrate. An insulating layer formed between the bridge wiring and
The transparent electrode includes a plurality of first transparent electrodes and a plurality of second transparent electrodes made of ITO, wherein each first transparent electrode is connected in a first direction, and the first transparent electrode The insulating layer is formed on the surface of the connecting portion of the electrode, and each second transparent electrode crosses the first direction by the bridge wiring formed through the insulating surface of the insulating layer. Connected to
The insulating layer is made of novolac resin,
The insulating layer is formed so as to fill a space between the connecting portion of the first transparent electrode and the second transparent electrode and to run on the surface of the second transparent electrode,
Said bridge wire includes a base layer made of amorphous ITO formed by contact toward the surface of the second transparent electrode from the surface of the insulating layer, a metal layer consisting of the formed only on the surface of the underlying layer Au A laminated structure with a conductive oxide protective layer made of amorphous ITO formed only on the surface of the metal layer is provided.

  As a result, good invisible characteristics can be secured, low resistance of the bridge wiring can be realized, and adhesion between the bridge wiring and the insulating layer can be improved. The underlayer made of ITO functions as a barrier layer against moisture caused by the water absorption of the insulating layer. Furthermore, the underlayer made of ITO can appropriately follow the shrinkage of the insulating layer due to environmental changes. Thus, good environmental resistance (moisture resistance, heat resistance) can be secured.

Before Symbol metal layer, Ru is formed by Au. As a result, good invisible characteristics can be secured and low resistance can be realized.

In the present invention, a conductive oxide protective layer made of ITO on the surface of the metal layer is Ru is formed. In this way, the metal layer is not exposed on the surface of the bridge wiring, and the surface of the metal layer is covered with the conductive oxide protective layer, so that the conductive oxide protective layer flows into the bridge wiring from the surface side. Therefore, the environment resistance of the bridge wiring can be improved more effectively. Moreover, invisible characteristics can be further improved.

In the present invention, the resistance of the bridge wiring and the resistance to electrostatic breakdown can be improved by forming the conductive oxide protective layer from ITO.

  In the present invention, it is preferable that the bridge wiring has an ESD characteristic of 2 kV or more. The sheet resistance value Rs of the bridge wiring is preferably less than 40Ω / □. Moreover, it is preferable that the film thickness of the said metal layer is 2-20 nm. Moreover, it is preferable that the film thickness of the said metal layer is 2-6 nm. Moreover, it is preferable that the film thickness of the said base layer is 5-40 nm. Moreover, it is preferable that the film thickness of the said conductive oxide protective layer is 5-40 nm. The width of the bridge wiring is preferably 5 to 50 μm, and the length of the bridge wiring is preferably 150 to 500 μm. In addition, the bridge wiring is formed by laminating the base layer, the metal layer, and the conductive oxide protective layer on the surface of each transparent electrode, the surface of the insulating layer, and the surface of the transparent base material, It is preferable that the shape is left in an elongated shape from the surface of the insulating layer to the surface of the second transparent electrode layer by lithography. The insulating layer is preferably subjected to bleaching.

  Further, the present invention can be preferably applied to a configuration in which the insulating layer constituting the insulating surface is formed of a novolac resin.

  The present invention can be preferably applied to a configuration in which an optical transparent adhesive layer that is a bonding material between transparent substrates is in contact with the surface of the bridge wiring. Moreover, it can apply preferably to the structure which joins between the 1st surface side of a transparent base material, and the panel whose surface is an operation surface by the said optical transparent adhesion layer.

  According to the input device of the present invention, good invisible characteristics can be secured, low resistance can be realized, and adhesion between the bridge wiring and the insulating layer can be improved. The underlayer made of ITO functions as a barrier layer against moisture caused by the water absorption of the insulating layer. Furthermore, the underlayer made of ITO can appropriately follow the shrinkage of the insulating layer due to environmental changes. Thus, good environmental resistance (moisture resistance, heat resistance) can be secured.

FIG. 1 is a plan view showing each transparent electrode and wiring portion formed on the surface of a transparent substrate constituting the input device (touch panel) in the present embodiment. 2 (a) is an enlarged plan view of the input device shown in FIG. 1, and FIG. 2 (b) is a portion of the input device as seen from the direction of the arrow when FIG. 2 (a) is cut along AA. FIG. 2C is an enlarged longitudinal sectional view, and FIG. 2C is a partially enlarged longitudinal sectional view of an input device that is partially different from FIG. FIG. 3A is an enlarged longitudinal sectional view of the bridge wiring in the reference example , and FIG. 3B is an enlarged longitudinal sectional view of the bridge wiring in the present embodiment. FIG. 4 is a process diagram illustrating a method of manufacturing the input device according to the present embodiment, in which the right diagram in FIG. 4 is a partial longitudinal sectional view, and the left diagram in FIG. 4 is a plan view.

  FIG. 1 is a plan view showing each transparent electrode and wiring portion formed on the surface of a transparent substrate constituting the input device (touch panel) in this embodiment, and FIG. 2 (a) is an input shown in FIG. 2B is an enlarged plan view of the device, and FIG. 2B is a partially enlarged longitudinal sectional view of the input device when FIG. 2A is cut along AA and viewed from the direction of the arrow, and FIG. These are the partial expanded longitudinal cross-sectional views of the input device which differs in part from FIG.2 (b).

  In this specification, “transparent” and “translucent” refer to a state where the visible light transmittance is 50% or more (preferably 80% or more). Further, it is preferable that the haze value is 6 or less.

  FIG. 1 shows the transparent electrodes 4 and 5 and the wiring portion 6 formed on the surface (first surface) 2a of the transparent base material 2 constituting the input device 1, but actually FIG. As shown in b), since the transparent panel 3 is provided on the surface side of the transparent base material 2 and there is a decorative layer at the position of the wiring part 6, the wiring part 6 is viewed from the surface side of the panel 3. I can't. Although the transparent electrode is transparent, it cannot be visually recognized, but FIG. 1 shows the outer shape of the transparent electrode.

  The transparent substrate 2 is formed of a film-like transparent substrate such as polyethylene terephthalate (PET), a glass substrate, or the like. The transparent electrodes 4 and 5 are formed of a transparent conductive material such as ITO (Indium Tin Oxide) by sputtering or vapor deposition.

  As shown in FIG. 1, a plurality of first transparent electrodes 4 and a plurality of second transparent electrodes are displayed in a display area 11 (a display screen that can be operated with an operating body such as a finger and is opposed to a display display). An electrode 5 is formed.

  As shown in FIGS. 1 and 2A, the plurality of first transparent electrodes 4 are formed on the surface 2a of the transparent substrate 2, and each first transparent electrode 4 is connected to the Y1 via the elongated connecting portion 7. It is connected in the -Y2 direction (first direction). And the 1st electrode 8 which consists of the some 1st transparent electrode 4 connected with the Y1-Y2 direction is arranged at intervals in the X1-X2 direction.

  As shown in FIGS. 1 and 2A, the plurality of second transparent electrodes 5 are formed on the surface 2 a of the transparent substrate 2. As described above, the second transparent electrode 5 is formed on the same surface as the first transparent electrode 4 (the surface 2a of the transparent substrate 2). As shown in FIG. 1 and FIG. 2A, each second transparent electrode 5 is connected to the X1-X2 direction (second direction) via an elongated bridge wiring 10. And the 2nd electrode 12 which consists of a plurality of 2nd transparent electrodes 5 connected in the X1-X2 direction is arranged at intervals in the Y1-Y2 direction.

  As shown in FIGS. 2A and 2B, an insulating layer 20 is formed on the surface of the connecting portion 7 that connects the first transparent electrodes 4. As shown in FIG. 2B, the insulating layer 20 fills the space between the connecting portion 7 and the second transparent electrode 5, and is somewhat on the surface of the second transparent electrode 5.

  As shown in FIGS. 2A and 2B, the bridge wiring 10 is formed from the surface 20a of the insulating layer 20 to the surface of each second transparent electrode 5 located on both sides of the insulating layer 20 in the X1-X2 direction. Has been. The bridge wiring 10 electrically connects the second transparent electrodes 5.

  As shown in FIGS. 2A and 2B, an insulating layer 20 is provided on the surface of the connecting portion 7 that connects the first transparent electrodes 4, and each second transparent electrode is provided on the surface of the insulating layer 20. A bridge wiring 10 that connects the five is provided. As described above, the insulating layer 20 is interposed between the connecting portion 7 and the bridge wiring 10, and the first transparent electrode 4 and the second transparent electrode 5 are electrically insulated. And in this embodiment, the 1st transparent electrode 4 and the 2nd transparent electrode 5 can be formed in the same surface (surface 2a of the transparent base material 2), and thickness reduction of the input device 1 is realizable.

  The connecting portion 7, the insulating layer 20, and the bridge wiring 10 are all located in the display area 11 and are configured to be transparent and translucent like the transparent electrodes 4 and 5.

  As shown in FIG. 1, the periphery of the display area 11 is a frame-shaped decoration area (non-display area) 25. The display area 11 is transparent and translucent, but the decorative area 25 is opaque and non-translucent. Therefore, the wiring part 6 and the external connection part 27 provided in the decoration area 25 cannot be seen from the surface of the input device 1 (the surface of the panel 3).

  As shown in FIG. 1, a plurality of wiring portions 6 led out from the first electrodes 8 and the second electrodes 12 are formed in the decoration region 25. Each wiring part 6 has a metal material such as Cu, Cu alloy, CuNi alloy, Ni, Ag, Au, and the like.

  As shown in FIG. 1, the tip of each wiring part 6 constitutes an external connection part 27 that is electrically connected to a flexible printed circuit board (not shown).

  As shown in FIG. 2B, the surface 2 a side of the transparent substrate 2 and the panel 3 are joined via an optical transparent adhesive layer (OCA: Optical Clear Adhesive) 30. The panel 3 is not particularly limited in material, but a glass substrate or a plastic substrate is preferably applied. The optical transparent adhesive layer (OCA) 30 is an acrylic adhesive or a double-sided adhesive tape.

  In the capacitance-type input device 1 shown in FIG. 1, when touching the operation surface 3 a of the panel 3 as shown in FIG. 2B, the finger F and the first transparent electrode 4 close to the finger F And a capacitance occurs between the second transparent electrode 5 and the second transparent electrode 5. Based on the capacitance change at this time, the contact position of the finger F can be calculated. The position of the finger F detects the X coordinate based on the capacitance change with the first electrode 8 and detects the Y coordinate based on the capacitance change with the second electrode 12 ( Self-capacitance detection type). Further, a drive voltage is applied to one row of the first electrodes of the first electrode 8 and the second electrode 12, and a change in capacitance between the finger F is detected by the other second electrode. Alternatively, a mutual capacitance detection type in which the Y position is detected by the second electrode and the X position is detected by the first electrode may be used.

  In the present embodiment, there is a characteristic part in the structure of the bridge wiring 10 that connects the second transparent electrodes 5.

As shown in FIG. 3A, the bridge wiring 10 of the reference example includes a transparent base layer 35 made of ITO formed from the surface 20a of the insulating layer 20 to the surface 5a of the second transparent electrode 5, and a base layer. It has a two-layer structure with a transparent metal layer 36 formed on the surface of 35 and having a lower resistance than the base layer 35.

  The metal layer 36 is preferably formed of any one of Au, Au alloy, CuNi, and Ni. Among these, it is more preferable to select Au. The reason for selecting Au is that it is a material that does not oxidize even in heat resistance, moisture resistance, and environmental tests, has a small resistance change, and can maintain a low resistance.

According to the configuration of FIG. 3A , good invisible characteristics can be ensured, and the adhesion between the bridge wiring 10 and the insulating layer 20 can be improved. The underlayer 35 made of ITO also functions as a barrier layer against moisture caused by the water absorption of the insulating layer 20. In addition, the underlayer 35 made of ITO can increase the electrostatic breakdown voltage value (withstand voltage value) and can improve the electrostatic breakdown resistance. In FIG. 3A , a novolac resin (resist) can be used for the insulating layer 20, and the gap between the second transparent electrode 5 and the connecting portion 7 can be filled appropriately. Further, the surface 20a of the insulating layer 20 can be formed smoothly, and the unevenness can be reduced. The underlayer 35 made of ITO in FIG. 3A functions as a barrier layer against moisture caused by the water absorption of the novolak resin, and can appropriately follow the shrinkage of the insulating layer 20 due to environmental changes. Thus, favorable environmental resistance (moisture resistance, heat resistance) can be obtained by the laminated structure of the base layer 35 and the metal layer 36 made of ITO.

  Moreover, the electrostatic breakdown voltage value (withstand voltage value) can be increased by the laminated structure of the base layer 35 and the metal layer 36 made of ITO, and the electrostatic breakdown resistance can be improved.

  Here, the maximum film thickness of the insulating layer 20 is about 0.5 to 4 μm, the film thickness of the base layer 35 is about 5 to 40 nm, and the film thickness of the metal layer 36 is about 2 to 20 nm. Moreover, the width dimension (length dimension in the Y1-Y2 direction) of the bridge wiring is about 5 to 50 μm, and the length dimension (length dimension in the X1-X2 direction) is about 150 to 500 μm.

In FIG. 3A , even if the metal layer 36 of Au or the like having an electric resistivity sufficiently lower than that of ITO is made thin and narrow, the bridge is formed as compared with the case where the bridge wiring is formed with a single layer film of ITO. The resistance of the wiring 10 can be reduced, and in addition, in FIG. 3A , the invisible characteristics can be improved by forming the metal layer 36 with a small thickness and a small width.

  Moreover, by using ITO for the underlayer 35 made of ITO and each of the transparent electrodes 4 and 5, it is possible to ensure good electrical bonding as well as good adhesion.

As shown in FIG. 3B, the bridge wiring 10 of the present embodiment includes a transparent underlayer 35 made of ITO formed from the surface 20a of the insulating layer 20 to the surface 5a of the second transparent electrode 5, It has a three-layer structure of a metal layer 36 made of Au , which is formed on the surface of the base layer 35 and has a lower resistance than that of the base layer 35, and a transparent protective layer 37 made of ITO formed on the surface of the metal layer 36. . The film thickness of the conductive oxide protective layer 37 made of ITO is about 5 to 40 nm.

As shown in FIG. 3B, the surface of the metal layer 36 is covered with a conductive oxide protective layer 37 made of ITO, so that the conductive oxide protective layer 37 is replaced with the acrylic pressure-sensitive adhesive shown in FIG. It can be made to function as a barrier layer against moisture caused by the water absorption of the optically transparent adhesive layer (OCA) 30 formed by, for example. Further, the conductive oxide protective layer 37 by using a highly transparent ITO, it is possible to improve the resistance of the electrostatic breakdown resistance of the bridge wire. Also, the surface of the metal layer 36 by covering a conductive oxide protective layer 37 made of ITO, can suppress the reflectance of the bridge wire 10, it can increase the ratio of the transmittance / reflectance as a result, the invisible properties Further improvement can be achieved effectively.

In the present embodiment shown in FIG. 3B as well, adhesion between the bridge wiring 10 and the insulating layer 20 can be improved by laying the base layer 35 made of ITO under the metal layer 36. it can. Further, the base layer 35 can also function as a barrier layer against moisture caused by the water absorption of the insulating layer 20. Therefore, as shown in FIG. 3B, by providing the base layer 35 made of ITO and the conductive oxide protective layer 37 on the front and back surfaces of the metal layer 36, the environmental resistance can be improved more effectively. Can do.

  In addition, the underlayer 35 made of ITO can increase the electrostatic breakdown voltage value (withstand voltage value) and can improve the electrostatic breakdown resistance. Further, by using ITO for the underlayer 35 made of ITO and the transparent electrodes 4 and 5, it is possible to ensure good electrical bonding as well as good adhesion.

  3A, the surface of the metal layer 36 is in contact with the optically transparent adhesive layer (OCA) 30, but the two-layer structure is shown in the experimental results described below. Environmental resistance that can be used as the input device 1 was obtained.

  In this embodiment, as shown in FIG. 2B, the transparent electrodes 4 and 5, the insulating layer 20, and the bridge wiring 10 are provided on the surface 2 a facing the panel 3 of the transparent substrate 2. As shown to (c), each transparent electrode 4 and 5, the insulating layer 20, and the bridge | bridging wiring 10 can also be provided in the back surface 2b (1st surface) side of the transparent base material 2. FIG. In FIG. 2C, an optical transparent adhesive layer (OCA) 28 which is a bonding material between the back surface 2 b of the transparent substrate 2 and another transparent substrate 26 is in contact with the bridge wiring 10.

  Moreover, the connection part 7 which connects between the 1st transparent electrodes 4 can be formed with ITO. That is, each first transparent electrode 4 and the connecting portion can be integrally formed.

  Further, amorphous ITO can be used as the ITO constituting the base layer 35 and the conductive oxide protective layer 37 of the bridge wiring 10. However, the base layer 35 and the conductive oxide protective layer 37 can also be formed of crystalline ITO.

  FIG. 4 is a process diagram showing a method for manufacturing the input device 1 according to the present embodiment. The left figure of FIG. 4 is a partial longitudinal sectional view, and the right figure is a plan view. The left figure and the right figure have different dimensional ratios. The partial vertical sectional view shown in FIG. 4 is cut along the X1-X2 direction in the same manner as the partial vertical sectional view shown in FIG. In FIG. 4, the transparent electrodes 4 and 5 are shown.

  In the step of FIG. 4A, the transparent electrodes 4 and 5 made of ITO are formed on the surface 2 a of the transparent substrate 2. At this time, the connecting portion 7 for connecting the first transparent electrodes 4 and 4 is formed integrally with the first transparent electrode 4 from ITO.

  Next, in the step of FIG. 4B, an insulating layer made of a novolac resin or the like that covers the top of the connecting portion 7 and fills the space between the second transparent electrodes 5 located on both sides of the connecting portion 7 in the X1-X2 direction. 20 is formed. At this time, it is preferable to perform bleaching to make the insulating layer 20 transparent by overall exposure.

Following the step of FIG. 4 (c), the surface of the transparent electrodes 4 and 5, consisting of I TO on the surface and the transparent substrate 2 of the surface of the insulating layer 20 underlying layer 35 / A u or Ranaru metal layer 36 / A bridge wiring 10 having a three-layer structure of a conductive oxide protective layer 37 made of ITO is formed. At this time, each layer of the base layer 35, the metal layer 36, and the conductive oxide protective layer 37 is formed by sputtering or vapor deposition.

  In FIG. 4D, the bridge wiring 10 is elongated in the X1-X2 direction from the surface of the insulating layer 20 to the surface of the second transparent electrode 4 located on both sides of the insulating layer 20 using a photolithography technique or the like. Leave in shape. At this time, it is preferable to perform selective etching so that the surfaces of the transparent electrodes 4 and 5 are not scraped. Thereby, the second transparent electrodes 5 and 5 can be electrically connected via the bridge wiring 10.

  After that, as shown in FIG. 2B, the surface 2 a side of the transparent substrate 2 and the panel 3 whose surface is the operation surface 3 a are joined via the optical transparent adhesive layer 30.

  The input device in this embodiment is used for a mobile phone, a digital camera, a PDA, a game machine, a car navigation system, and the like.

In the experiment, a transparent electrode (ITO) having a structure shown in FIG. 2, an insulating layer (novolak resin), and a bridge wiring were formed on a transparent substrate. The bridge wirings connecting the second transparent electrodes are amorphous ITO (underlayer) / Au (metal layer) / amorphous ITO (conductive oxide protective layer) of Examples 1 to 3 shown in Table 1 below. A three-layer structure of Reference Example 1 to a three-layer structure of amorphous ITO (underlayer) / Au (metal layer) in Reference Example 3 , a two-layer structure of CuNi (underlayer) / Au (metal layer) in Comparative Example 1, A two-layer structure of Ti (underlayer) / Au (metal layer) of Comparative Example 2 and an ITO single layer film of Comparative Examples 3 to 5 were formed.

  Table 1 shows the film thickness of each layer, the width dimension of the bridge wiring (the length in the Y1-Y2 direction shown in FIG. 2A), and the length dimension of the bridge wiring (X1-X2 shown in FIG. 2A). Direction length). The transmittance and reflectance shown in Table 1 were measured in a state (solid film state) formed on the entire surface of the substrate before processing into the shape of the bridge wiring.

  The invisible rank shown in Table 1 is based on the ITO single layer film of Comparative Example 3. In Comparative Example 3, a bridge wiring made of ITO was seen. △ indicates that the bridge wiring is not visible compared to Comparative Example 3, but the bridge wiring is visible when tilted, ○ indicates that 10% or less of the total number of bridge wiring is visible when tilted, and ◎ indicates the bridge wiring when tilted Is invisible.

  Further, regarding the sheet resistance value Rs of the bridge wiring, the case where it is larger than 60Ω / □ is rated as “X”, 40-60Ω / □ is evaluated as “◯”, and the value less than 40Ω / □ is evaluated as “◎”.

  In addition, regarding the electrical resistance change in the environmental test in which the temperature is 85 ° C. and the humidity is 85% RH as the acceleration test, the change rate is ± 100% or more, or × when the wire breaks, and the change rate is ± 30% or more The case where it was less than 100% was evaluated as Δ, and the case where the rate of change was within ± 30% was evaluated as ○.

  In addition, the adhesion in the environmental test in a dry atmosphere at 85 ° C. was evaluated as x if there was a break, and ◯ if there was no break.

  Moreover, about ESD (Electro-Static Discharge) test (electrostatic breakdown voltage test), less than 1 kv was evaluated as x, 1 kV or more and less than 2 kV was evaluated as Δ, and 2 kV or more was evaluated as ◯.

  As shown in Table 1, in Comparative Example 1, the ESD characteristics (electrostatic breakdown voltage) were lowered and became unusable. In Comparative Example 2, disconnection occurred in the environmental resistance test. In Comparative Example 2, Ti as a base could not follow the shrinkage of the insulating layer (novolak resin), and peeled off and disconnected.

  In Comparative Examples 3 to 5 shown in Table 1, either the invisible characteristic or the sheet resistance value Rs was x.

  On the other hand, in the examples, there was no x in any of the sheet resistance value Rs, the invisible characteristic, and the environmental test. In the examples, good ESD characteristics (electrostatic breakdown voltage) could be obtained.

Example 1 to Example 3 having a three-layer structure in which ITO is formed on the front and back surfaces of Au can suppress the reflectance as compared with Reference Example 1 to Reference Example 3 having a two-layer structure of ITO / Au. As a result, the transmittance / reflectance ratio could be increased, and good invisible characteristics could be obtained.

DESCRIPTION OF SYMBOLS 1 Input device 2 Transparent base material 3 Panel 4 1st transparent electrode 5 2nd transparent electrode 6 Wiring part 7 Connection part 10 Bridge wiring 11 Display area 20 Insulating layer 25 Decoration area 30 Optical transparent adhesion layer (OCA)
35 Underlayer 36 Metal layer 37 Conductive oxide protective layer

Claims (10)

A transparent substrate, a plurality of transparent electrodes formed on a first surface of the transparent substrate, and a bridge wiring for electrically connecting said transparent electrodes, between the bridge wire and the transparent substrate An insulating layer formed, and
The transparent electrode includes a plurality of first transparent electrodes and a plurality of second transparent electrodes made of ITO, wherein each first transparent electrode is connected in a first direction, and the first transparent electrode The insulating layer is formed on the surface of the connecting portion of the electrode, and each second transparent electrode crosses the first direction by the bridge wiring formed through the insulating surface of the insulating layer. Connected to
The insulating layer is made of novolac resin,
The insulating layer is formed so as to fill a space between the connecting portion of the first transparent electrode and the second transparent electrode and to run on the surface of the second transparent electrode,
Said bridge wire includes a base layer made of amorphous ITO formed by contact toward the surface of the second transparent electrode from the surface of the insulating layer, a metal layer consisting of the formed only on the surface of the underlying layer Au An input device comprising a laminated structure with a conductive oxide protective layer made of amorphous ITO formed only on the surface of the metal layer.   The input device according to claim 1, wherein the bridge wiring has an ESD characteristic of 2 kV or more.   The input device according to claim 1, wherein a sheet resistance value Rs of the bridge wiring is less than 40Ω / □.   The input device according to claim 1, wherein the metal layer has a thickness of 2 to 20 nm.   The input device according to claim 4, wherein the metal layer has a thickness of 2 to 6 nm.   The input device according to claim 1, wherein the underlayer has a thickness of 5 to 40 nm.   The input device according to any one of claims 1 to 6, wherein the conductive oxide protective layer has a thickness of 5 to 40 nm.   The input device according to claim 1, wherein a width dimension of the bridge wiring is 5 to 50 μm, and a length dimension of the bridge wiring is 150 to 500 μm.   The bridge wiring is formed by laminating the base layer, the metal layer, and the conductive oxide protective layer on the surface of each transparent electrode, the surface of the insulating layer, and the surface of the transparent substrate, and then photolithography technology. The input device according to claim 1, wherein the input device is left in an elongated shape from the surface of the insulating layer to the surface of the second transparent electrode layer.   The input device according to claim 1, wherein the insulating layer is bleached.

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