JP5071856B2 - Yttrium oxide material and member for semiconductor manufacturing equipment - Google Patents
Yttrium oxide material and member for semiconductor manufacturing equipment Download PDFInfo
- Publication number
- JP5071856B2 JP5071856B2 JP2008046329A JP2008046329A JP5071856B2 JP 5071856 B2 JP5071856 B2 JP 5071856B2 JP 2008046329 A JP2008046329 A JP 2008046329A JP 2008046329 A JP2008046329 A JP 2008046329A JP 5071856 B2 JP5071856 B2 JP 5071856B2
- Authority
- JP
- Japan
- Prior art keywords
- yttrium oxide
- oxide material
- sic
- silicon carbide
- particle size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/90—Other properties not specified above
Landscapes
- Drying Of Semiconductors (AREA)
- Ceramic Products (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本発明は、半導体製造装置用部材に適用して好適な酸化イットリウム材料に関する。 The present invention relates to an yttrium oxide material suitable for application to a member for a semiconductor manufacturing apparatus.
一般に、ベルジャー，チャンバー，サセプター，クランプリング，フォーカスリング等の半導体製造装置用部材は、ハロゲン系ガス雰囲気や高密度プラズマ雰囲気等の化学的腐食性が高い雰囲気内において使用されることが多い。このような背景から、従来より、耐食性が高く、汚染源になりにくい酸化イットリウム材料により半導体製造装置用部材を形成することが検討されている。
しかしながら、従来の酸化イットリウム材料は３点曲げ強度が１４０〜１８０ＭＰａ程度，破壊靱性が０．８〜１．１ＭＰａ√ｍ程度と機械的特性に劣っている。このため、半導体製造装置用部材に適用した場合、加工時や使用時に破損することがあり、歩留まり，ハンドリング性，及び信頼性の面において問題がある。 However, the conventional yttrium oxide material has inferior mechanical properties such as a three-point bending strength of about 140 to 180 MPa and a fracture toughness of about 0.8 to 1.1 MPa√m. For this reason, when it is applied to a member for a semiconductor manufacturing apparatus, it may be damaged during processing or use, and there are problems in terms of yield, handling properties, and reliability.
本発明は、上述の課題を解決するためになされたものであり、その目的は、機械的特性に優れた酸化イットリウム材料を提供することにある。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide an yttrium oxide material having excellent mechanical properties.
本願発明の発明者らは、鋭意研究を重ねてきた結果、酸化イットリウム（Ｙ２Ｏ３）に炭化珪素（ＳｉＣ）とフッ化イットリウム（ＹＦ３）を添加することにより酸化イットリウム材料が強靱化し、半導体製造装置用部材に適用した場合の歩留まり，ハンドリング性，及び信頼性を向上できることを知見した。 The inventors of the present invention have made extensive studies, and as a result, yttrium oxide material is toughened by adding silicon carbide (SiC) and yttrium fluoride (YF 3 ) to yttrium oxide (Y 2 O 3 ). It was discovered that yield, handling, and reliability can be improved when applied to semiconductor manufacturing equipment components.
なお本発明において、酸化イットリウム材料中の炭化珪素の粒径は３μｍ以下であることが望ましい。一般に、炭化珪素は酸化イットリウムと比較してハロゲン系プラズマに対する耐食性が著しく低い特性を示す。このため、炭化珪素が添加された酸化イットリウム材料をハロゲン系プラズマに曝すと、酸化イットリウムよりも炭化珪素が優先的に腐食することにより、孔が生成され、炭化珪素の粒子径によって大体決まる大きさの段差が形成される。一方、酸化イットリウム単体の焼結体であっても、ハロゲン系プラズマに曝すと結晶方位の違いに起因する腐食され易さの違いにより２μｍ程度の大きさの段差が形成される。従って、炭化珪素を添加しても酸化イットリウム材料表面の平滑性が悪化しないように、炭化珪素の粒径は３μｍ以下であることが望ましい。また炭化珪素の粒径を３μｍ以下にすることにより、酸化イットリウム材料の強度低下を抑制できる。 In the present invention, the particle size of silicon carbide in the yttrium oxide material is preferably 3 μm or less. In general, silicon carbide has a characteristic of extremely low corrosion resistance against halogen-based plasma as compared with yttrium oxide. For this reason, when the yttrium oxide material to which silicon carbide is added is exposed to the halogen-based plasma, the silicon carbide preferentially corrodes over the yttrium oxide, so that pores are generated and the size is roughly determined by the particle size of the silicon carbide. Are formed. On the other hand, even a sintered body of a single yttrium oxide, when exposed to a halogen-based plasma, a step having a size of about 2 μm is formed due to the difference in the degree of corrosion caused by the difference in crystal orientation. Therefore, it is desirable that the particle size of silicon carbide be 3 μm or less so that the smoothness of the surface of the yttrium oxide material does not deteriorate even if silicon carbide is added. Moreover, the strength fall of a yttrium oxide material can be suppressed by making the particle size of silicon carbide into 3 micrometers or less.
また本発明において、酸化イットリウム材料は、酸化イットリウムと炭化珪素と希土類フッ化物の混合粉末とを１３００℃以上１８５０℃以下の焼成温度で焼成することにより製造することが望ましい。酸化イットリウムとフッ化イットリウムの共晶温度は１３００℃であるので、１３００℃以上の焼成温度では液相が生成されるため燃結が促進され、酸化イットリウム材料の緻密化が期待できる。また焼成温度が１８５０℃以上であると、炭化珪素やＹＯＦ等の粒成長が生じることによって酸化イットリウム材料の強度が低下する。 In the present invention, the yttrium oxide material is desirably produced by firing a mixed powder of yttrium oxide, silicon carbide, and rare earth fluoride at a firing temperature of 1300 ° C. or higher and 1850 ° C. or lower. Since the eutectic temperature of yttrium oxide and yttrium fluoride is 1300 ° C., a liquid phase is generated at a firing temperature of 1300 ° C. or higher, so that sintering is promoted and densification of the yttrium oxide material can be expected. Further, when the firing temperature is 1850 ° C. or higher, grain growth of silicon carbide, YOF, or the like occurs, so that the strength of the yttrium oxide material is lowered.
以下、実施例と比較例の酸化イットリウム材料の強度，破壊靱性，及びエッチングレートを比較することにより本発明の実施形態となる酸化イットリウム材料を詳しく説明する。 Hereinafter, the yttrium oxide materials according to the embodiments of the present invention will be described in detail by comparing the strength, fracture toughness, and etching rate of the yttrium oxide materials of the example and the comparative example.
〔実施例１〕
実施例１では、酸化イットリウム（Ｙ２Ｏ３，信越化学製，ＵＵＨＰグレード），炭化珪素（ＳｉＣ，イビデン（株）製ウルトラファイン），及びフッ化イットリウム（ＹＦ３，（株）高純度化学研究所製）をそれぞれ９６，３，１ｖｏｌ％の比率で調合した後、ＩＰＡ（イソプロピルアルコール）溶媒を利用して２４時間湿式混合（ＺｒＯ２玉石を利用したボールミル）することによりスラリーを調製した。次に、スラリーを篩に通した後、１１０℃の窒素雰囲気で１６時間乾燥させることにより粉体を得た。次に、粉体を篩に通した後、２００ｋｇ／ｃｍ２のプレス圧により８０ｇの粉体をφ５０ｍｍに成形した。そして最後に、１６００℃のアルゴンガス雰囲気下で成形体を２００ｋｇ／ｃｍ２のプレス圧で４時間ホットプレス焼成することにより、実施例１の酸化イットリウム材料を得た。
[Example 1]
In Example 1, yttrium oxide (Y 2 O 3 , manufactured by Shin-Etsu Chemical Co., UUHP grade), silicon carbide (SiC, ultra fine manufactured by Ibiden Co., Ltd.), and yttrium fluoride (YF 3 , high purity chemical research) Were prepared at a ratio of 96, 3, 1 vol%, respectively, and then wet mixed (ball mill using ZrO 2 boulder) for 24 hours using an IPA (isopropyl alcohol) solvent to prepare a slurry. Next, the slurry was passed through a sieve and then dried in a nitrogen atmosphere at 110 ° C. for 16 hours to obtain a powder. Next, after passing the powder through a sieve, 80 g of the powder was formed to a diameter of 50 mm with a press pressure of 200 kg / cm 2 . And finally, the yttrium oxide material of Example 1 was obtained by carrying out the hot press baking for 4 hours by the press pressure of 200 kg / cm < 2 > in 1600 degreeC argon gas atmosphere.
〔実施例２〕
実施例２では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ９２，３，５ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例２の酸化イットリウム材料を得た。
[Example 2]
In Example 2, the same treatment as in Example 1 was performed except that Y 2 O 3 , SiC, and YF 3 were blended in proportions of 92, 3 , and 5 vol%, respectively, thereby obtaining the yttrium oxide material of Example 2. .
〔実施例３〕
実施例３では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ９４，５，１ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例３の酸化イットリウム材料を得た。
Example 3
In Example 3, the yttrium oxide material of Example 3 was obtained by carrying out the same treatment as in Example 1 except that Y 2 O 3 , SiC, and YF 3 were prepared in proportions of 94, 5, and 1 vol%, respectively. .
〔実施例４〕
実施例４では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ９４，３，３ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例４の酸化イットリウム材料を得た。
Example 4
In Example 4, the yttrium oxide material of Example 4 was obtained by performing the same treatment as Example 1 except that Y 2 O 3 , SiC, and YF 3 were prepared in proportions of 94, 3 , and 3 vol%, respectively. .
〔実施例５〕
実施例５では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ９０，５，５ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例５の酸化イットリウム材料を得た。
Example 5
In Example 5, the same treatment as in Example 1 was performed except that Y 2 O 3 , SiC, and YF 3 were mixed at a ratio of 90, 5, and 5 vol%, respectively, thereby obtaining the yttrium oxide material of Example 5. .
〔実施例６〕
実施例６では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ９２，７，１ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例６の酸化イットリウム材料を得た。
Example 6
In Example 6, the yttrium oxide material of Example 6 was obtained by performing the same process as Example 1 except that Y 2 O 3 , SiC, and YF 3 were blended in proportions of 92, 7, and 1 vol%, respectively. .
〔実施例７〕
実施例７では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ８９，１０，１ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例７の酸化イットリウム材料を得た。
Example 7
In Example 7, the same treatment as in Example 1 was performed except that Y 2 O 3 , SiC, and YF 3 were mixed at a ratio of 89, 10, and 1 vol%, respectively, thereby obtaining the yttrium oxide material of Example 7. .
〔実施例８〕
実施例８では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ８５，１０，５ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例８の酸化イットリウム材料を得た。
Example 8
In Example 8, the same treatment as in Example 1 was performed except that Y 2 O 3 , SiC, and YF 3 were blended in proportions of 85, 10, and 5 vol%, respectively, thereby obtaining the yttrium oxide material of Example 8. .
〔実施例９〕
実施例９では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ８６，１３，１ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例９の酸化イットリウム材料を得た。
Example 9
In Example 9, the yttrium oxide material of Example 9 was obtained by performing the same treatment as Example 1 except that Y 2 O 3 , SiC, and YF 3 were mixed at a ratio of 86, 13, and 1 vol%, respectively. .
〔実施例１０〕
実施例１０では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ８２，１３，５ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより実施例２の酸化イットリウム材料を得た。
Example 10
In Example 10, the yttrium oxide material of Example 2 was obtained by performing the same treatment as Example 1 except that Y 2 O 3 , SiC, and YF 3 were mixed in proportions of 82, 13, and 5 vol%, respectively. .
〔比較例１〕
比較例１では、酸化イットリウム（Ｙ２Ｏ３，信越化学製，ＵＵＨＰグレード）のみにより焼成体を形成した。
[Comparative Example 1]
In Comparative Example 1, a fired body was formed only from yttrium oxide (Y 2 O 3 , manufactured by Shin-Etsu Chemical Co., Ltd., UUHP grade).
〔比較例２〕
比較例２では、Ｙ２Ｏ３とＹＦ３をそれぞれ９５，５ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより比較例２の酸化イットリウム材料を得た。
[Comparative Example 2]
In Comparative Example 2, an yttrium oxide material of Comparative Example 2 was obtained by performing the same treatment as in Example 1 except that Y 2 O 3 and YF 3 were mixed at a ratio of 95, 5 vol%, respectively.
〔比較例３〕
比較例３では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ８５，５，１０ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより比較例３の酸化イットリウム材料を得た。
[Comparative Example 3]
In Comparative Example 3, an yttrium oxide material of Comparative Example 3 was obtained by performing the same treatment as in Example 1 except that Y 2 O 3 , SiC, and YF 3 were blended in proportions of 85, 5, and 10 vol%, respectively. .
〔比較例４〕
比較例４では、Ｙ２Ｏ３，ＳｉＣ，及びＹＦ３をそれぞれ８０，５，１５ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより比較例４の酸化イットリウム材料を得た。
[Comparative Example 4]
In Comparative Example 4, an yttrium oxide material of Comparative Example 4 was obtained by performing the same treatment as in Example 1 except that Y 2 O 3 , SiC, and YF 3 were mixed at a ratio of 80, 5, and 15 vol%, respectively. .
〔比較例５〕
比較例５では、Ｙ２Ｏ３とＳｉＣをそれぞれ８０，２０ｖｏｌ％の比率で調合した以外は実施例１と同じ処理を行うことにより比較例５の酸化イットリウム材料を得た。
[Comparative Example 5]
In Comparative Example 5, to obtain an yttrium oxide-containing material of Comparative Example 5 by except that formulated Y 2 O 3 and SiC at a ratio of each 80,20Vol% to perform the same treatment as in Example 1.
〔構成相の評価〕
Ｘ線回折装置（回転対陰極型Ｘ線回折装置（理学電機製ＲＩＮＴ），ＣｕＫα線源，５０ｋＶ，３００ｍＡ，２θ＝１０〜７０°）を利用して実施例１〜１０及び比較例１〜５の各酸化イットリウム材料から得られたＸ線回折パターンから結晶相を同定した結果、以下の表１に示すように、実施例１，３，６，７，９及び比較例５の酸化イットリウム材料は酸化イットリウム（Ｙ２Ｏ３），炭化珪素（ＳｉＣ），及びＹ２ＳｉＯ５により構成され、実施例２，５，８，１０及び比較例３，４の酸化イットリウム材料はＹ２Ｏ３，ＳｉＣ，及びＹＯＦにより構成されていることが明らかになった。また実施例４の酸化イットリウム材料はＹ２Ｏ３とＳｉＣにより構成されていることが明らかになった。
Examples 1 to 10 and Comparative Examples 1 to 5 using an X-ray diffractometer (rotary anti-cathode X-ray diffractometer (RINT manufactured by Rigaku Corporation), CuKα radiation source, 50 kV, 300 mA, 2θ = 10 to 70 °) As a result of identifying the crystal phase from the X-ray diffraction pattern obtained from each of the yttrium oxide materials, as shown in Table 1 below, the yttrium oxide materials of Examples 1, 3, 6, 7, 9 and Comparative Example 5 were It is composed of yttrium oxide (Y 2 O 3 ), silicon carbide (SiC), and Y 2 SiO 5 , and the yttrium oxide materials of Examples 2, 5 , 8, 10 and Comparative Examples 3 and 4 are Y 2 O 3 , SiC. , And YOF. The yttrium oxide-containing material of Example 4 was found to be composed by Y 2 O 3 and SiC.
また、実施例１〜１０の酸化イットリウム材料の構造を化学分析により評価した結果、ＹＦ３の添加量が少なく（実施例では１ｖｏｌ％）、ＳｉＯ２量が反応に関与するＹＦ３量より多い場合には、以下の化学式１，２に示す反応が進むことにより、図１（ａ），（ｂ）に示すように、Ｙ２ＳｉＯ５材料３に包接された炭化珪素粒子２が酸化イットリウム基体１中に点在する構成になることが明らかになった。
一方、ＹＦ３の添加量が多く（実施例では５ｖｏｌ％）、ＳｉＯ２量が反応に関与するＹＦ３量より少ない場合には、前述の化学式１と以下の化学式３に示す反応が進むことにより、図２（ａ），（ｂ）に示すように、酸化イットリウム基体１中に炭化珪素粒子２が点在すると共に炭化珪素粒子２間にＹＯＦ領域４が形成された構成になることが明らかになった。
また実施例１〜１０及び比較例３〜５の酸化イットリウム材料中におけるＳｉＣの平均粒径をＳＥＭ写真から評価した結果、ＳｉＣの平均粒径はいずれも３μｍ以下の範囲内にあることが明らかになった。また実施例２，５，８，１０及び比較例２〜４の酸化イットリウム材料中におけるＹＯＦの平均粒径をＳＥＭ写真から評価した結果、実施例２，５，８，１０の酸化イットリウム材料ではＹＯＦの平均粒径はいずれも１０μｍ以下の範囲内にあることが明らかになった。 Moreover, as a result of evaluating the average particle diameter of SiC in the yttrium oxide materials of Examples 1 to 10 and Comparative Examples 3 to 5 from SEM photographs, it is clear that the average particle diameter of SiC is in the range of 3 μm or less. became. Moreover, as a result of evaluating the average particle diameter of YOF in the yttrium oxide materials of Examples 2, 5, 8, and 10 and Comparative Examples 2 to 4 from the SEM photographs, YOF was obtained for the yttrium oxide materials of Examples 2, 5, 8, and 10. It was revealed that the average particle diameter of each was in the range of 10 μm or less.
〔ＳｉＣの平均粒子径の測定〕
実施例１〜１０及び比較例３〜５の酸化イットリウム材料をＳＥＭの反射電子像で観察し、各酸化イットリウム材料中におけるＳｉＣの平均粒径を測定した。但し、粒径０．５μｍ未満のＳｉＣ粒子は明確に計測できなかったため、粒径０．５μｍ以上の粒子のみの短径のサイズを測定し、その平均値を求めてこれを平均粒径とした。この結果、ＳｉＣの平均粒径は何れも２μｍ以下であることがわかった。また、粒径０．５μｍ以上の比較的大きなＳｉＣ粒子は主に粒界に存在していた。なお、０．５μｍ程度以下の微細なＳｉＣ粒子は正確に測定することができなかったが、ＹＦ３の添加の有無によってＳｉＣの存在頻度が異なることが観察された。すなわちＹＦ３を添加した場合、多くの微細なＳｉＣ粒子粒子が酸化イットリウムの粒内に存在している様子が観察された。これに対してＹＦ３を添加しなかった場合には、微細なＳｉＣ粒子がほとんど観察されなかった。この原因は現段階では明らかではないが、ＹＦ３を添加することによって、低温での焼成が可能となり微細なＳｉＣ粒子が安定に存在できること、及びＳｉＣ粒子が酸化イットリウムの粒内に取り込まれやすくなったものと考えられる。
[Measurement of average particle diameter of SiC]
The yttrium oxide materials of Examples 1 to 10 and Comparative Examples 3 to 5 were observed by SEM reflected electron images, and the average particle size of SiC in each yttrium oxide material was measured. However, since SiC particles having a particle size of less than 0.5 μm could not be clearly measured, the size of the short diameter of only particles having a particle size of 0.5 μm or more was measured, and the average value was obtained to be used as the average particle size. . As a result, it was found that the average particle diameter of SiC was 2 μm or less. Further, relatively large SiC particles having a particle size of 0.5 μm or more exist mainly at the grain boundaries. Although fine SiC particles of about 0.5 μm or less could not be measured accurately, it was observed that the presence frequency of SiC differs depending on whether or not YF 3 was added. That is, when YF 3 was added, it was observed that many fine SiC particle particles were present in the yttrium oxide particles. When not added YF 3, on the other hand, the fine SiC particles was hardly observed. The reason for this is not clear at this stage, but by adding YF 3 , firing at a low temperature is possible, fine SiC particles can be stably present, and SiC particles are easily incorporated into yttrium oxide grains. It is thought that.
〔強度の評価〕
実施例１〜１０及び比較例１〜５の各酸化イットリウム材料について３点曲げ試験を行うことにより３点曲げ強度を評価した。評価結果を表１に示す。この結果、実施例１〜１０の酸化イットリウム材料の３点曲げ強度はいずれも２５０ＭＰａ以上であることが明らかになった。
[Evaluation of strength]
Three-point bending strength was evaluated by conducting a three-point bending test for each of the yttrium oxide materials of Examples 1 to 10 and Comparative Examples 1 to 5. The evaluation results are shown in Table 1. As a result, it was revealed that the three-point bending strengths of the yttrium oxide materials of Examples 1 to 10 were all 250 MPa or more.
〔破壊靱性の評価〕
実施例１〜１０及び比較例１〜５の各酸化イットリウム材料についてＪＩＳ＿Ｒ＿１６０７にしたがってＩＦ法（加重９．８Ｎ）により破壊靱性を評価した。評価結果を表１に示す。この結果、実施例１〜１０の酸化イットリウム材料の破壊靱性はいずれも１．３ＭＰａ√ｍ以上であることが明らかになった。またＹＦ３を添加した材料の方が少ないＳｉＣ添加量で強度及び破壊靱性が高くなる傾向があった。この理由は現段階では明らかでないが、ＹＦ３を添加することにより、比較的大きな粒径０．５μｍ以上のＳｉＣ粒子は酸化イットリウムの粒界に存在し、微細な粒径０．５μｍ以下のＳｉＣ粒子は酸化イットリウムの粒内に存在するようになるため、粒界及び粒内の機械的特性が効果的に向上したためと考えられる。
(Evaluation of fracture toughness)
Fracture toughness of each yttrium oxide material of Examples 1 to 10 and Comparative Examples 1 to 5 was evaluated by IF method (loading 9.8 N) according to JIS_R — 1607. The evaluation results are shown in Table 1. As a result, it was revealed that the fracture toughness of the yttrium oxide materials of Examples 1 to 10 was 1.3 MPa√m or more. In addition, the material added with YF 3 tended to have higher strength and fracture toughness with a smaller amount of SiC added. The reason for this is not clear at this stage, but by adding YF 3 , SiC particles having a relatively large particle size of 0.5 μm or more are present at the grain boundary of yttrium oxide, and SiC particles having a fine particle size of 0.5 μm or less are present. It is considered that the particles are present in the grains of yttrium oxide, and the mechanical properties in the grain boundaries and grains are effectively improved.
〔エッチングレートの評価〕
実施例１〜１０及び比較例１〜５の各酸化イットリウム材料について耐食試験装置を用いてプラズマ耐食試験を行った。具体的には、ガスはＮＦ３，Ｏ２，Ａｒを使用し、ＩＣＰを用いて８００Ｗでプラズマを発生させ、発生したプラズマをバイアス３００Ｗで被試験片に照射した。そして、段差計により測定したマスク面と暴露面の段を試験時間で割ることにより各酸化イットリウム材料のエッチングレートを算出した。算出結果を表１に示す。この結果、耐食性が悪い炭化珪素を耐食性が良い酸化イットリウムに添加しても、その量、形状、分散状態がある条件を満たしている場合には、耐食性が大きく低下しないことがわかった。
[Etching rate evaluation]
Plasma corrosion resistance tests were performed on the yttrium oxide materials of Examples 1 to 10 and Comparative Examples 1 to 5 using a corrosion resistance test apparatus. Specifically, NF 3 , O 2 , and Ar were used as gases, plasma was generated at 800 W using ICP, and the test piece was irradiated with the generated plasma at a bias of 300 W. Then, the etching rate of each yttrium oxide material was calculated by dividing the step of the mask surface and the exposed surface measured by a step meter by the test time. The calculation results are shown in Table 1. As a result, it has been found that even when silicon carbide having poor corrosion resistance is added to yttrium oxide having good corrosion resistance, the corrosion resistance is not greatly lowered if the amount, shape, and dispersion state satisfy certain conditions.
以上のことから、実施例の酸化イットリウム材料によれば、炭化珪素が添加されることにより高破壊靱性化し、ＹＦ３が添加されることにより燃結性が向上し、低温で焼成可能になることにより高強度化を実現することができることが知見された。なお、ＹＦ３の添加量を多くするとＹＯＦの粒径が大きくな強度が低下するが、実施例の酸化イットリウム材料によれば、ＹＯＦの粒径を最適化することができる。 From the above, according to the yttrium oxide material of the example, high fracture toughness is obtained by adding silicon carbide, and flammability is improved by adding YF 3 and can be fired at a low temperature. It has been found that high strength can be realized. Note that when the amount of YF 3 added is increased, the strength of the YOF particle size is increased and the strength is lowered. However, according to the yttrium oxide material of the example, the particle size of YOF can be optimized.
〔室温体積抵抗率と比誘電率の評価〕
実施例１，３，６，７，９及び比較例１の各酸化イットリウム材料について室温における体積抵抗率（室温体積抵抗率）と比誘電率を測定した。なお体積抵抗率は、ＪＩＳ−Ｃ２１４１に準じた方法により、大気中で測定した。また比誘電率は、□２１ｍｍ×２１ｍｍ，厚さ０．１ｍｍの平板形状の試料表面を研磨によって表面粗さＲａ＝０．１μｍ以下とした後、インピーダンスアナライザー４２９１Ａを用いて測定した。測定結果を以下の表２に示す。
For each yttrium oxide material of Examples 1, 3, 6, 7, 9 and Comparative Example 1, the volume resistivity at room temperature (room volume resistivity) and the relative dielectric constant were measured. The volume resistivity was measured in the atmosphere by a method according to JIS-C2141. The relative dielectric constant was measured by using an impedance analyzer 4291A after polishing a flat sample surface of □ 21 mm × 21 mm and thickness 0.1 mm to a surface roughness Ra = 0.1 μm or less. The measurement results are shown in Table 2 below.
表２に示す通り、ＳｉＣの添加量が０〜１０ｖｏｌ％の範囲内では、室温体積抵抗率が１０１６Ω・ｃｍ以上となり、酸化イットリウム材料は高抵抗を維持するが、ＳｉＣの添加量が１３ｖｏｌ％になると、室温体積抵抗率が３×１０１３Ω・ｃｍとなり、酸化イットリウム材料は低抵抗化する。一方、ＳｉＣが全く添加されていない場合、酸化イットリウム材料の比誘電率は１２であったが、ＳｉＣの添加量が３〜１０の範囲内では、酸化イットリウム材料の比誘電率は１６〜１８．５となり、比較的高い値を示した。以上のことから、３〜１０ｖｏｌ％の範囲内でＳｉＣを添加することにより、高い体積抵抗率を維持しつつ酸化イットリウム材料の比誘電率を高められることが明らかになった。 As shown in Table 2, when the addition amount of SiC is in the range of 0 to 10 vol%, the room temperature volume resistivity is 10 16 Ω · cm or more, and the yttrium oxide material maintains high resistance, but the addition amount of SiC is 13 vol. %, The room temperature volume resistivity becomes 3 × 10 13 Ω · cm, and the resistance of the yttrium oxide material is lowered. On the other hand, when no SiC was added, the relative dielectric constant of the yttrium oxide material was 12, but when the added amount of SiC was within the range of 3 to 10, the relative dielectric constant of the yttrium oxide material was 16 to 18. It was 5 and showed a relatively high value. From the above, it has been clarified that the relative dielectric constant of the yttrium oxide material can be increased while maintaining a high volume resistivity by adding SiC within the range of 3 to 10 vol%.
なお特開２００６−６９８４３号公報には、２〜３０ｗｔ％の範囲内で酸化イットリウム材料にＳｉＣを添加することにより酸化イットリウム材料に導電性を付与する発明が記載されている。これに対し本願発明は、３〜１０ｖｏｌ％の範囲内で酸化イットリウム材料にＳｉＣを添加することにより高い体積抵抗率を維持しつつ酸化イットリウム材料の比誘電率を高めるものである。一般に、クーロンタイプの静電チャックではウエハを吸着するために１０１５Ω・ｃｍ以上の体積抵抗率が必要になる。また静電チャックの吸着力は以下の数式式（１）で表され、比誘電率が高いほど同じ誘電体の厚み及び印加電圧で高い吸着力を得ることができる。若しくは、同じ印加電圧で同等の吸着力を得るために誘電体の厚みを厚くすることができる。従って本願発明によれば、機械的特性に劣る酸化イットリウム材料を半導体製造装置用の部材へ適用した場合に、部材の厚みを厚くでき、機械的特性の信頼性をあげることができる。 JP 2006-69843 A describes an invention in which conductivity is imparted to an yttrium oxide material by adding SiC to the yttrium oxide material within a range of 2 to 30 wt%. In contrast, the present invention increases the relative dielectric constant of the yttrium oxide material while maintaining a high volume resistivity by adding SiC to the yttrium oxide material within a range of 3 to 10 vol%. In general, a coulomb type electrostatic chuck requires a volume resistivity of 10 15 Ω · cm or more to attract a wafer. Further, the attractive force of the electrostatic chuck is expressed by the following mathematical formula (1), and the higher the relative dielectric constant, the higher the attractive force can be obtained with the same dielectric thickness and applied voltage. Alternatively, the thickness of the dielectric can be increased in order to obtain the same attractive force with the same applied voltage. Therefore, according to the present invention, when an yttrium oxide material inferior in mechanical properties is applied to a member for a semiconductor manufacturing apparatus, the thickness of the member can be increased, and the reliability of mechanical properties can be increased.
Ｆ＝（１／２）×ε２×ε０×（Ｖ／ｄ）２ …（１）
Ｆは吸着力、εは比誘電率、ε０は真空の誘電率、Ｖは印加電圧、ｄは誘電体の厚み（酸化イットリウム材料）を示す。
F = (1/2) × ε 2 × ε 0 × (V / d) 2 (1)
F is an adsorption force, ε is a relative dielectric constant, ε 0 is a vacuum dielectric constant, V is an applied voltage, and d is a dielectric thickness (yttrium oxide material).
同じようにＳｉＣを添加しているのにも係わらず本願発明と特開２００６−６９８４３号公報記載の発明とで導電性が異なる理由は現段階では明らかではないが、これはＳｉＣ及び酸化イットリウムの粒子径と粒成長のし易さの違いによるものと考えられる。すなわち一般に、絶縁体に導電性粒子を添加して導電性を発現させる場合、マトリックスである絶縁体の粒径が大きく、逆に導電性粒子の粒径が小さいほど、少ない添加量で導電性が発現する。このため特開２００６−６９８４３号公報記載の発明では粒径の小さいＳｉＣ粒子及び粒径が大きい酸化イットリウム粉末を使用している。これに対し本願発明では、機械的特性を大きくするために、粒径が比較的大きいＳｉＣ粒子を含むと粒径が小さい酸化イットリウム粒子を使用している。また、一般に酸化イットリウムにＳｉＣを添加すると焼結性が阻害され、高い焼結温度が必要となり、結果として粒成長が促進される。また焼結中、ＳｉＣと酸化イットリウムでは、特に酸化イットリウムの方が粒成長し易い。このような理由から特開２００６−６９８４３号公報記載の発明では導電性が発現し易くなると考えられる。これに対して本出願特許ではＹＦ３を添加し、低温で焼成できるため、酸化イットリウムの粒成長を抑制でき、さらに粒径０．５μｍ程度以下の微細なＳｉＣ粒子は酸化イットリウムの粒内に取り込まれるため、導電性がないと考えられる。 The reason why the conductivity is different between the present invention and the invention described in Japanese Patent Application Laid-Open No. 2006-69843 despite the addition of SiC is not clear at this stage, but this is not the case with SiC and yttrium oxide. This is thought to be due to the difference in particle size and ease of grain growth. That is, in general, when conductive particles are added to an insulator to develop conductivity, the smaller the particle size of the conductive particles, the smaller the particle size of the conductive particles, the smaller the added amount, the higher the conductivity. To express. For this reason, in the invention described in JP-A-2006-69843, SiC particles having a small particle diameter and yttrium oxide powder having a large particle diameter are used. On the other hand, in the present invention, in order to increase the mechanical characteristics, yttrium oxide particles having a small particle size are used when SiC particles having a relatively large particle size are included. In general, when SiC is added to yttrium oxide, the sinterability is hindered and a high sintering temperature is required, and as a result, grain growth is promoted. Further, during sintering, yttrium oxide tends to grow more easily during sintering. For this reason, it is considered that the conductivity described in Japanese Patent Application Laid-Open No. 2006-69843 is easily developed. On the other hand, in this patent application, YF3 can be added and baked at a low temperature, so that yttrium oxide grain growth can be suppressed, and fine SiC particles having a grain size of about 0.5 μm or less are taken into the yttrium oxide grains. Therefore, it is considered that there is no conductivity.
以上、本発明者らによってなされた発明を適用した実施の形態について説明したが、この実施の形態による本発明の開示の一部をなす論述及び図面により本発明は限定されることはない。例えば本実施形態では、フッ化イットリウムを酸化イットリウムに含有させたが、フッ化イットリウム以外の希土類フッ化物であってもよい。例えば、フッ化イットリウムの代わりにはフッ化ランタンやフッ化イッテリビウムなどが挙げられる。このように、上記実施の形態に基づいて当業者等によりなされる他の実施の形態、実施例及び運用技術等は全て本発明の範疇に含まれることは勿論であることを付け加えておく。 As mentioned above, although the embodiment to which the invention made by the present inventors was applied has been described, the present invention is not limited by the description and the drawings that form part of the disclosure of the present invention according to this embodiment. For example, in this embodiment, yttrium fluoride is contained in yttrium oxide, but rare earth fluorides other than yttrium fluoride may be used. For example, lanthanum fluoride or ytterbium fluoride can be used instead of yttrium fluoride. As described above, it is a matter of course that all other embodiments, examples, operation techniques, and the like made by those skilled in the art based on the above embodiments are included in the scope of the present invention.
１：酸化イットリウム基体
２：炭化珪素粒子
３：Ｙ２ＳｉＯ５材料
４：ＹＯＦ領域
1: Yttrium oxide substrate 2: Silicon carbide particles 3: Y 2 SiO 5 material 4: YOF region
Claims (5)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008046329A JP5071856B2 (en) | 2007-03-12 | 2008-02-27 | Yttrium oxide material and member for semiconductor manufacturing equipment |
| TW097107855A TWI433825B (en) | 2007-03-12 | 2008-03-06 | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material |
| US12/043,988 US7833924B2 (en) | 2007-03-12 | 2008-03-07 | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material |
| EP20080250811 EP1972599B1 (en) | 2007-03-12 | 2008-03-10 | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material |
| CN2008100951590A CN101265101B (en) | 2007-03-12 | 2008-03-12 | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material |
| KR1020080022852A KR101457215B1 (en) | 2007-03-12 | 2008-03-12 | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, amd method of producing yttrium oxide-containing material |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007062329 | 2007-03-12 | ||
| JP2007062329 | 2007-03-12 | ||
| JP2008046329A JP5071856B2 (en) | 2007-03-12 | 2008-02-27 | Yttrium oxide material and member for semiconductor manufacturing equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012176270A Division JP5667607B2 (en) | 2007-03-12 | 2012-08-08 | Yttrium oxide material, member for semiconductor manufacturing apparatus, and method for manufacturing yttrium oxide material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008255001A JP2008255001A (en) | 2008-10-23 |
| JP5071856B2 true JP5071856B2 (en) | 2012-11-14 |
Family
ID=39978947
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008046329A Active JP5071856B2 (en) | 2007-03-12 | 2008-02-27 | Yttrium oxide material and member for semiconductor manufacturing equipment |
| JP2012176270A Active JP5667607B2 (en) | 2007-03-12 | 2012-08-08 | Yttrium oxide material, member for semiconductor manufacturing apparatus, and method for manufacturing yttrium oxide material |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012176270A Active JP5667607B2 (en) | 2007-03-12 | 2012-08-08 | Yttrium oxide material, member for semiconductor manufacturing apparatus, and method for manufacturing yttrium oxide material |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP5071856B2 (en) |
| KR (1) | KR101457215B1 (en) |
| CN (1) | CN101265101B (en) |
| TW (1) | TWI433825B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9440886B2 (en) * | 2013-11-12 | 2016-09-13 | Applied Materials, Inc. | Rare-earth oxide based monolithic chamber material |
| JP5911036B1 (en) * | 2014-11-21 | 2016-04-27 | 日本イットリウム株式会社 | Sintered body |
| US11572617B2 (en) * | 2016-05-03 | 2023-02-07 | Applied Materials, Inc. | Protective metal oxy-fluoride coatings |
| JP6993986B2 (en) * | 2016-12-20 | 2022-01-14 | 三井金属鉱業株式会社 | Rare earth oxyfluoride sintered body and its manufacturing method |
| KR102106533B1 (en) * | 2017-05-26 | 2020-05-06 | 아이원스 주식회사 | Forming method of fluorinated yttrium oxide coating film and fluorinated yttrium oxide coating film thereof |
| KR102062397B1 (en) * | 2017-05-26 | 2020-01-03 | 아이원스 주식회사 | Forming method of fluorinated oxide film and fluorinated film thereof |
| WO2018217062A1 (en) * | 2017-05-26 | 2018-11-29 | 아이원스 주식회사 | A method for forming yttrium oxide fluoride coating film and yttrium oxide fluoride coating film prepared thereby |
| KR102027128B1 (en) * | 2017-08-11 | 2019-10-01 | (주)단단 | Manufacturing method of YOF based powder |
| JP6932070B2 (en) * | 2017-11-29 | 2021-09-08 | 東京エレクトロン株式会社 | Focus ring and semiconductor manufacturing equipment |
| KR102266658B1 (en) | 2020-12-10 | 2021-06-18 | 주식회사 미코 | Yittrium granular powder for thermal spray and thermal spray coating produced using the same |
| KR102266656B1 (en) * | 2020-12-10 | 2021-06-18 | (주)코미코 | Yittrium granular powder for thermal spray and thermal spray coating produced using the same |
| KR102266655B1 (en) * | 2020-12-10 | 2021-06-18 | (주)코미코 | The method of producing thermal spray coating using the yittrium powder and the yittrium coating produced by the mothod |
| KR20230102468A (en) * | 2021-12-30 | 2023-07-07 | 주식회사 원익큐엔씨 | Manufacturing method for fluorination of components of semiconductor equipment capable of maximizing reduction of pollutation particles and components manufactured by the method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0733286B2 (en) * | 1988-02-29 | 1995-04-12 | トヨタ自動車株式会社 | Method for manufacturing silicon carbide sintered body |
| JP3186158B2 (en) * | 1992-01-21 | 2001-07-11 | 住友電気工業株式会社 | Composite ceramic sintered body and method for producing the same |
| JPH0733526A (en) * | 1993-07-20 | 1995-02-03 | Hitachi Ltd | Fluoride ceramic having high strength |
| JPH07315949A (en) * | 1994-05-23 | 1995-12-05 | Hitachi Ltd | High reliability heat resistant ceramics and turbine parts |
| JPH104083A (en) * | 1996-06-17 | 1998-01-06 | Kyocera Corp | Anticorrosive material for semiconductor fabrication |
| JP2001179080A (en) * | 1999-12-27 | 2001-07-03 | Nihon Ceratec Co Ltd | Member for treating substrate contaminated with metallic substance at low degree |
| JP2002356387A (en) * | 2001-03-30 | 2002-12-13 | Toshiba Ceramics Co Ltd | Plasma proof member |
| US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| JP3894365B2 (en) * | 2002-02-12 | 2007-03-22 | 東芝セラミックス株式会社 | Components for semiconductor processing equipment |
| JP4486372B2 (en) * | 2003-02-07 | 2010-06-23 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US8460945B2 (en) * | 2003-09-30 | 2013-06-11 | Tokyo Electron Limited | Method for monitoring status of system components |
| JP4429742B2 (en) * | 2004-01-21 | 2010-03-10 | 住友大阪セメント株式会社 | Sintered body and manufacturing method thereof |
| JP4181069B2 (en) * | 2004-02-27 | 2008-11-12 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP2006069843A (en) * | 2004-09-02 | 2006-03-16 | Ibiden Co Ltd | Ceramic member for semiconductor manufacturing apparatus |
| JP5046480B2 (en) * | 2004-09-24 | 2012-10-10 | 京セラ株式会社 | Corrosion resistant member, manufacturing method thereof, and semiconductor / liquid crystal manufacturing apparatus member using the same |
| JP4796354B2 (en) * | 2005-08-19 | 2011-10-19 | 日本碍子株式会社 | Electrostatic chuck and method for producing yttria sintered body |
| JP4628900B2 (en) * | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| EP3654756B1 (en) * | 2017-07-17 | 2021-10-06 | AB Ludvig Svensson | Greenhouse screen |
-
2008
- 2008-02-27 JP JP2008046329A patent/JP5071856B2/en active Active
- 2008-03-06 TW TW097107855A patent/TWI433825B/en active
- 2008-03-12 CN CN2008100951590A patent/CN101265101B/en active Active
- 2008-03-12 KR KR1020080022852A patent/KR101457215B1/en active IP Right Grant
-
2012
- 2012-08-08 JP JP2012176270A patent/JP5667607B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101457215B1 (en) | 2014-10-31 |
| TW200902475A (en) | 2009-01-16 |
| JP2012232897A (en) | 2012-11-29 |
| CN101265101B (en) | 2013-02-06 |
| JP2008255001A (en) | 2008-10-23 |
| CN101265101A (en) | 2008-09-17 |
| KR20080083600A (en) | 2008-09-18 |
| JP5667607B2 (en) | 2015-02-12 |
| TWI433825B (en) | 2014-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5071856B2 (en) | Yttrium oxide material and member for semiconductor manufacturing equipment | |
| JP4936948B2 (en) | Composite material and manufacturing method thereof | |
| US7833924B2 (en) | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material | |
| JP4987238B2 (en) | Aluminum nitride sintered body, semiconductor manufacturing member, and aluminum nitride sintered body manufacturing method | |
| JP7120398B2 (en) | Thermal spray material | |
| US7744780B2 (en) | Yttrium oxide material, member for use in semiconductor manufacturing apparatus, and method for producing yttrium oxide material | |
| JP6388188B1 (en) | Film forming material and film | |
| WO2019188148A1 (en) | Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body | |
| US6884742B2 (en) | Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members | |
| US11837488B2 (en) | Composite sintered body, semiconductor manufacturing apparatus member, and method of manufacturing composite sintered body | |
| JP2010208871A (en) | Aluminum oxide sintered compact, method for producing the same and member for semiconductor producing apparatus | |
| JP4429742B2 (en) | Sintered body and manufacturing method thereof | |
| JP4889155B2 (en) | High-strength alumina sintered body having free machinability and corrosion-resistant member using the same | |
| US8178459B2 (en) | Corrosion-resistant member and method of manufacturing same | |
| JP5188085B2 (en) | Aluminum nitride corrosion-resistant member and semiconductor manufacturing apparatus member | |
| JP2008195973A (en) | Ceramics for plasma treatment system, and its manufacturing method | |
| JP2009203113A (en) | Ceramics for plasma treatment apparatus | |
| JP2007001862A (en) | Aluminum nitride sintered compact and method of manufacturing the same | |
| JP2008195546A (en) | Ceramics for plasma treatment device, and production method thereof | |
| JP2007217217A (en) | Yttria ceramic sintered body and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090629 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090715 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090917 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090917 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110209 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20110210 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110421 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20110421 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120423 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120508 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120626 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120717 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120810 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5071856 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150831 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |