JP5064296B2 - Method and apparatus for forming silicon carbonitride film - Google Patents

Description

  The present invention relates to a method and apparatus for forming a silicon carbonitride film.

In the manufacturing process of a semiconductor device, a thin film such as a silicon nitride film is formed on an object to be processed, for example, a semiconductor wafer. In such a thin film formation process, for example, an ALD (Atomic Layer Deposition) method of forming a silicon nitride film on a semiconductor wafer by alternately supplying a silicon source and a nitriding gas on the semiconductor wafer has begun to be adopted. Various proposals regarding the ALD method have been made (for example, Patent Document 1).
JP 2004-281853 A

  By the way, with the miniaturization of devices, the silicon nitride film is required to improve chemical resistance. For this reason, for example, a silicon carbonitride film in which carbon (C) is added (doped) to a silicon nitride film has been studied so as to improve the chemical resistance against a chemical solution such as dilute hydrofluoric acid (DHF).

  However, when the silicon carbonitride film is formed using the ALD method, the process of adding carbon (C) after adsorbing the silicon source to the semiconductor wafer and then nitriding the carbon source is repeated. Has the problem of getting worse. Further, it is desired that the silicon carbonitride film further improve its chemical resistance.

This invention is made | formed in view of the said problem, and it aims at providing the formation method and formation apparatus of a silicon carbonitride film which can improve productivity.
It is another object of the present invention to provide a method and apparatus for forming a silicon carbonitride film that can improve chemical resistance.

In order to achieve the above object, a method for forming a silicon carbonitride film according to the first aspect of the present invention includes:
The reaction chamber in which the processing body is stored is set to a predetermined temperature and a predetermined pressure, and supplies the Jikuroroshira emissions and isopropylamine in the reaction chamber to form a silicon carbonitride film on the target object, that It is characterized by.

Preferably, the reaction chamber is set to 600 ° C. to 800 ° C., and dichlorosilane and isopropylamine are supplied into the reaction chamber to form a silicon carbonitride film on the object to be processed .

The pressure in the reaction tube is preferably set to 1.33 Pa to 1330 Pa, for example.
For example, a plurality of the objects to be processed are accommodated in the reaction chamber.

An apparatus for forming a silicon carbonitride film according to a second aspect of the present invention,
A reaction chamber containing a workpiece and having a heating unit that can be set to a predetermined temperature;
And silicon source supply means for supplying Jikuroroshira in to the reaction chamber,
Isopropylamine supply means for supplying isopropylamine into the reaction chamber;
An exhaust pipe connected to the reaction chamber, and exhaust means capable of exhausting the gas in the reaction chamber from the exhaust pipe and setting the reaction chamber to a predetermined pressure;
The silicon source supply means and the isopropylamine supply means in a state where the heating section is controlled to set the reaction chamber at a predetermined temperature, and the exhaust means is controlled to set the reaction chamber at a predetermined pressure. by controlling, and said Jikuroroshira ting the isopropylamine is fed into the reaction chamber, and control means for forming a silicon carbonitride film on the target object,
It is characterized by comprising.

Before SL control unit, for example, to set the reaction chamber by controlling the heating unit to 600 ° C. to 800 ° C..

For example, the control unit controls the exhaust unit to set the pressure in the reaction chamber to 1.33 Pa to 1330 Pa.
For example, a plurality of the objects to be processed are accommodated in the reaction chamber.

The program according to the third aspect of the present invention is:
Computer
Accommodates the object to be processed, the source of silicon supply means for supplying Jikuroroshira in to the reaction chamber having a heating unit can be set to a predetermined temperature,
Isopropylamine supply means for supplying isopropylamine into the reaction chamber,
An exhaust unit that has an exhaust pipe connected to the reaction chamber and exhausts the gas in the reaction chamber from the exhaust pipe to set the reaction chamber at a predetermined pressure;
The silicon source supply means and the isopropylamine supply means in a state where the heating section is controlled to set the reaction chamber at a predetermined temperature, and the exhaust means is controlled to set the reaction chamber at a predetermined pressure. by controlling, the Jikuroroshira ting and the isopropylamine is fed into the reaction chamber, said control means for forming a silicon carbonitride film on the target object,
It is made to function as.

  According to the present invention, the productivity of the silicon carbonitride film can be improved.

  Hereinafter, a method and an apparatus for forming a silicon carbonitride film according to the present invention will be described. In the present embodiment, the present invention will be described by taking as an example the case where the batch type vertical heat treatment apparatus 1 shown in FIG. 1 is used.

  As shown in FIG. 1, the heat treatment apparatus 1 includes a reaction tube 2 that forms a reaction chamber. The reaction tube 2 is formed in, for example, a substantially cylindrical shape whose longitudinal direction is directed in the vertical direction. The reaction tube 2 is made of a material excellent in heat resistance and corrosion resistance, for example, quartz.

  At the upper end of the reaction tube 2 is provided a top portion 3 formed in a substantially conical shape so as to reduce in diameter toward the upper end side. An exhaust port 4 for exhausting the gas in the reaction tube 2 is provided at the center of the top 3, and an exhaust tube 5 is connected to the exhaust port 4 in an airtight manner. The exhaust pipe 5 is provided with a pressure adjusting mechanism such as a valve (not shown) and a vacuum pump 127 described later, and controls the inside of the reaction pipe 2 to a desired pressure (degree of vacuum).

  A lid 6 is disposed below the reaction tube 2. The lid 6 is made of a material excellent in heat resistance and corrosion resistance, for example, quartz. The lid 6 is configured to be movable up and down by a boat elevator 128 described later. When the lid 6 is raised by the boat elevator 128, the lower side (furnace port portion) of the reaction tube 2 is closed, and when the lid 6 is lowered by the boat elevator 128, the lower side (furnace port portion) of the reaction tube 2. Is opened.

  A heat insulating cylinder 7 is provided on the top of the lid 6. The heat retaining cylinder 7 includes a planar heater 8 made of a resistance heating element that prevents a temperature drop in the reaction tube 2 due to heat radiation from the furnace port portion of the reaction tube 2, and the heater 8 from a top surface of the lid 6 to a predetermined amount. It is mainly comprised from the cylindrical support body 9 supported to height.

  A rotary table 10 is provided above the heat insulating cylinder 7. The turntable 10 functions as a mounting table for rotatably mounting an object to be processed, for example, a wafer boat 11 that accommodates a semiconductor wafer W. Specifically, a rotary column 12 is provided at the lower part of the rotary table 10, and the rotary column 12 is connected to a rotary mechanism 13 that rotates through the central portion of the heater 8 and rotates the rotary table 10. The rotation mechanism 13 is mainly composed of a motor (not shown) and a rotation introduction portion 15 including a rotation shaft 14 that is penetrated and introduced in an airtight manner from the lower surface side to the upper surface side of the lid body 6. The rotary shaft 14 is connected to the rotary column 12 of the rotary table 10 and transmits the rotational force of the motor to the rotary table 10 via the rotary column 12. For this reason, when the rotating shaft 14 is rotated by the motor of the rotating mechanism 13, the rotating force of the rotating shaft 14 is transmitted to the rotating column 12 and the rotating table 10 rotates.

  A wafer boat 11 is placed on the turntable 10. The wafer boat 11 is configured to accommodate a plurality of semiconductor wafers W at a predetermined interval in the vertical direction. For this reason, when the turntable 10 is rotated, the wafer boat 11 is rotated, and the semiconductor wafer W accommodated in the wafer boat 11 is rotated by this rotation. The wafer boat 11 is made of a material excellent in heat resistance and corrosion resistance, for example, quartz.

  Further, around the reaction tube 2, for example, a temperature raising heater 16 made of a resistance heating element is provided so as to surround the reaction tube 2. The inside of the reaction tube 2 is heated to a predetermined temperature by the temperature raising heater 16, and as a result, the semiconductor wafer W is heated to a predetermined temperature.

  A plurality of process gas introduction pipes 17 are connected to the side surface near the lower end of the reaction tube 2. In FIG. 1, only one processing gas introduction pipe 17 is drawn. The processing gas introduction pipe 17 is inserted into the side wall near the lower end of the reaction tube 2 and introduces a film forming gas or the like into the reaction tube 2.

The deposition gas includes a silicon (Si) source such as dichlorosilane (DCS: SiH ₂ Cl ₂ ) and hexachlorodisilane (HCD: Si ₂ Cl ₆ ), and a isopropylamine as a carbon (C) source and a nitride source. (IPA: (CH ₃ ) ₂ CHNH ₂ ) is used. In this embodiment mode, DCS and IPA are used as the deposition gas.

  A purge gas supply pipe 18 is inserted through the side surface near the lower end of the reaction tube 2. A purge gas supply source (not shown) is connected to the purge gas supply pipe 18, and a desired amount of purge gas, for example, nitrogen gas, is supplied from the purge gas supply source through the purge gas supply pipe 18 into the reaction tube 2.

  Moreover, the heat processing apparatus 1 is provided with the control part 100 which controls each part of an apparatus. FIG. 2 shows the configuration of the control unit 100. As shown in FIG. 2, the control unit 100 includes an operation panel 121, a temperature sensor (group) 122, a pressure gauge (group) 123, a heater controller 124, an MFC control unit 125, a valve control unit 126, a vacuum pump 127, a boat An elevator 128 or the like is connected.

  The operation panel 121 includes a display screen and operation buttons, transmits an operation instruction of the operator to the control unit 100, and displays various information from the control unit 100 on the display screen.

The temperature sensor (group) 122 measures the temperature of each part in the reaction tube 2, the exhaust pipe 5, the processing gas introduction pipe 17, etc., and notifies the control unit 100 of the measured values.
The pressure gauge (group) 123 measures the pressure of each part in the reaction tube 2, the exhaust pipe 5, the processing gas introduction pipe 17, etc., and notifies the control unit 100 of the measured values.

  The heater controller 124 is for individually controlling the heater 8 and the heater 16 for raising temperature. In response to an instruction from the control unit 100, the heater controller 124 energizes them to heat them. Are measured individually and notified to the control unit 100.

  The MFC control unit 125 controls a mass flow controller (MFC) (not shown) provided in the processing gas introduction pipe 17 and the purge gas supply pipe 18 so that the flow rate of the gas flowing through them is controlled by the control unit 100. At the same time, the flow rate of the gas that actually flows is measured and notified to the control unit 100.

  The valve control unit 126 controls the opening degree of the valve disposed in each pipe to a value instructed by the control unit 100. The vacuum pump 127 is connected to the exhaust pipe 5 and exhausts the gas in the reaction pipe 2.

  The boat elevator 128 lifts the lid 6, loads the wafer boat 11 (semiconductor wafer W) placed on the rotary table 10 into the reaction tube 2, and rotates the lid 6 to lower the lid 6. The wafer boat 11 (semiconductor wafer W) placed on the table 10 is unloaded from the reaction tube 2.

  The control unit 100 includes a recipe storage unit 111, a ROM 112, a RAM 113, an I / O port 114, a CPU 115, and a bus 116 that interconnects them.

  The recipe storage unit 111 stores a setup recipe and a plurality of process recipes. At the beginning of the manufacture of the heat treatment apparatus 1, only the setup recipe is stored. The setup recipe is executed when generating a thermal model or the like corresponding to each heat treatment apparatus. The process recipe is a recipe prepared for each heat treatment (process) actually performed by the user. For example, each part from loading of the semiconductor wafer W to the reaction tube 2 until unloading of the processed wafer W is performed. The temperature change, the pressure change in the reaction tube 2, the start and stop timing and supply amount of the process gas supply are defined.

The ROM 112 is a recording medium that includes an EEPROM, a flash memory, a hard disk, and the like, and stores an operation program of the CPU 115 and the like.
The RAM 113 functions as a work area for the CPU 115.

  The I / O port 114 is connected to the operation panel 121, temperature sensor 122, pressure gauge 123, heater controller 124, MFC control unit 125, valve control unit 126, vacuum pump 127, boat elevator 128, etc. Control the output.

A CPU (Central Processing Unit) 115 constitutes the center of the control unit 100, executes a control program stored in the ROM 112, and stores recipes (for process) stored in the recipe storage unit 111 in accordance with instructions from the operation panel 121. The operation of the heat treatment apparatus 1 is controlled along the recipe. That is, the CPU 115 includes the temperature sensor (group) 122, the pressure gauge (group) 123, the MFC control unit 125, etc., in the reaction tube 2, the processing gas introduction tube 17, and the temperature, pressure, Based on the measurement data, control signals and the like are output to the heater controller 124, the MFC control unit 125, the valve control unit 126, the vacuum pump 127, and the like, and the respective units are controlled to follow the process recipe. .
The bus 116 transmits information between the units.

  Next, a method for forming a silicon carbonitride film of the present invention will be described using the heat treatment apparatus 1 configured as described above. In the present embodiment, the present invention will be described by taking as an example a case where DCS and IPA are supplied to a semiconductor wafer W to form a silicon carbonitride film having a predetermined thickness on the semiconductor wafer W. FIG. 3 shows a recipe for explaining the silicon carbonitride film forming method of the present embodiment.

  In the following description, the operation of each part constituting the heat treatment apparatus 1 is controlled by the control unit 100 (CPU 115). Further, as described above, the controller 100 (CPU 115) is controlled by the heater controller 124 (heater 8 and the temperature raising heater 16) and the MFC controller 125 for the temperature, pressure, gas flow rate, etc. in the reaction tube 2 in each process. By controlling the valve control unit 126, the vacuum pump 127, etc., the conditions according to the recipe shown in FIG.

  First, the inside of the reaction tube 2 is set to a predetermined temperature, for example, 300 ° C. as shown in FIG. Further, as shown in FIG. 3C, a predetermined amount of nitrogen is supplied from the purge gas supply pipe 18 into the reaction pipe 2 to accommodate a semiconductor wafer W as an object to be processed to form a silicon carbonitride film. Wafer boat 11 is placed on lid 6. Then, the lid 6 is raised by the boat elevator 128, and the semiconductor wafer W (wafer boat 11) is loaded into the reaction tube 2 (loading step).

  Next, as shown in FIG. 3 (c), a predetermined amount of nitrogen is supplied from the purge gas supply pipe 18 into the reaction tube 2, and the reaction tube 2 is given a predetermined temperature, for example, as shown in FIG. 3 (a). Set to 700 ° C. Further, the gas in the reaction tube 2 is discharged, and the reaction tube 2 is depressurized to a predetermined pressure, for example, 40 Pa (0.3 Torr) as shown in FIG. And the inside of the reaction tube 2 is stabilized at this temperature and pressure (stabilization step).

  When the inside of the reaction tube 2 is stabilized at a predetermined pressure and temperature, the supply of nitrogen from the purge gas supply tube 18 is stopped. Subsequently, a predetermined amount of film forming gas is introduced into the reaction tube 2 from the processing gas introduction tube 17. In the present embodiment, for example, DCS is supplied at 0.1 liter / min as shown in FIG. 3 (d), and IPA is supplied at 0.2 liter / min as shown in FIG. 3 (e). . When the film forming gas is introduced into the reaction tube 2, the film forming gas is heated in the reaction tube 2 to form a silicon carbonitride film on the surface of the semiconductor wafer W (film forming step).

  As described above, since the silicon carbonitride film is formed by the CVD (Chemical Vapor Deposition) method using DCS and IPA as the film forming gas, the productivity can be improved. Moreover, since IPA is used as the carbon (C) source and the nitriding source, high carbon doping can be performed while having nitriding ability.

  When the silicon carbonitride film having a predetermined thickness is formed on the surface of the semiconductor wafer W, the introduction of the deposition gas from the processing gas introduction pipe 17 is stopped. Then, the gas in the reaction tube 2 is discharged, and as shown in FIG. 3C, a predetermined amount of nitrogen is supplied from the purge gas supply tube 18, and the gas in the reaction tube 2 is discharged to the exhaust tube 5. (Purge process). In addition, in order to discharge | emit the gas in the reaction tube 2 reliably, it is preferable to repeat discharge | emission of the gas in the reaction tube 2, and supply of nitrogen gas in multiple times.

  Subsequently, as shown in FIG. 3 (c), a predetermined amount of nitrogen is supplied into the reaction tube 2 from the purge gas supply pipe 18, and the pressure in the reaction tube 2 is kept constant as shown in FIG. 3 (b). Return to pressure. The inside of the reaction tube 2 is set to a predetermined temperature, for example, 300 ° C. as shown in FIG. Then, the lid 6 is lowered by the boat elevator 128 to unload the semiconductor wafer W (wafer boat 11) from the reaction tube 2 (unload process). This completes the formation of the silicon carbonitride film.

  Next, in order to confirm the effect of the present embodiment, the temperature in the reaction tube 2 in the film forming step is 650 ° C. (Example 1), 700 ° C. (Example 2), and 750 ° C. (Example 3). In this case, a silicon carbonitride film was formed, and its deposition rate (deposition) and chemical resistance against 0.1% dilute hydrofluoric acid (DHF) (etching rate) were measured. FIG. 4 shows the result of the deposition of the silicon carbonitride film, and FIG. 5 shows the result of the etching rate of the silicon carbonitride film with respect to DHF.

The silicon carbonitride film was formed under the same conditions as in the above embodiment except for the temperature in the reaction tube 2 in the film formation process. For comparison, as an example of a conventional silicon carbonitride film formation method using the ALD method, a silicon carbonitride film is formed by alternately supplying DCS and monomethylamine (MMA: CH ₃ NH ₂ ). (Comparative Example 1), its deposition rate and etching rate were measured.

  As shown in FIG. 4, the deposition rate of the silicon carbonitride film formed by the method of the present invention can be larger (faster) than the deposition rate of the silicon carbonitride film formed by the conventional method. For this reason, it has been confirmed that the deposition rate can be improved by the method of the present invention.

  As shown in FIG. 5, the etching rate for the DHF of the silicon carbonitride film formed by the method of the present invention is reduced to 1/10 or less of the etching rate for the DHF of the silicon carbonitride film formed by the conventional method. be able to. For this reason, it was confirmed that the chemical resistance against DHF can be improved by the method of the present invention. The carbon concentrations in the silicon carbonitride films of Examples 1 to 3 and Comparative Example 1 are substantially the same, for example, 24% in Example 2 and 26% in Comparative Example 1. is there. Further, when other chemical solutions were tested in the same manner, it was confirmed that the same tendency was exhibited.

  As described above, according to the present embodiment, since the silicon carbonitride film is formed by the CVD method using DCS and IPA as the film forming gas, the productivity can be improved. Chemical resistance can be improved.

  In addition, this invention is not restricted to said embodiment, A various deformation | transformation and application are possible. Hereinafter, other embodiments applicable to the present invention will be described.

  In the above embodiment, the present invention has been described by taking DCS as the Si source and setting the temperature in the reaction tube 2 to 700 ° C. as an example. The temperature in the reaction tube 2 is preferably set to be in a range corresponding to the type of Si source to be used. For example, when DCS is used for the Si source, it is preferably set to 600 ° C. to 800 ° C. .

  In the above embodiment, the present invention has been described by taking DCS as the Si source as an example. However, the Si source is not limited to DCS, and various gases having Si such as HCD can be used. Can be used. For example, when HCD is used for the Si source, the temperature in the reaction tube 2 is preferably set to 300 ° C. to 650 ° C., and the temperature in the reaction tube 2 can be lowered. Even if an activation means is provided in the processing gas introduction pipe 17 and the activated film forming gas is supplied into the reaction tube 2, the temperature in the reaction tube 2 can be lowered. As a means for activation, there are a plasma generation means, a photolysis means, a catalyst activation means and the like in addition to a heating means.

  In the above embodiment, the present invention has been described by taking the case where the inside of the reaction tube 2 is set to 40 Pa (0.3 Torr) as an example, but the pressure in the reaction tube 2 is low, for example, 1.33 Pa (0.01 Torr). It is preferable to be set to ˜1330 Pa (10 Torr), and more preferably set to 13.3 Pa (0.1 Torr) to 133 Pa (1 Torr).

  In the above embodiment, the present invention has been described by taking the case of a batch type heat treatment apparatus having a single tube structure as the heat treatment apparatus. For example, a double tube structure in which the reaction tube 2 is composed of an inner tube and an outer tube. It is also possible to apply the present invention to the batch type vertical heat treatment apparatus. In addition, the present invention can be applied to a single wafer heat treatment apparatus.

  The control unit 100 according to the embodiment of the present invention can be realized using a normal computer system, not a dedicated system. For example, the control unit 100 that executes the above-described processing is configured by installing the program from a recording medium (such as a flexible disk or a CD-ROM) that stores the program for executing the above-described processing in a general-purpose computer. be able to.

  The means for supplying these programs is arbitrary. In addition to being able to be supplied via a predetermined recording medium as described above, for example, it may be supplied via a communication line, a communication network, a communication system or the like. In this case, for example, the program may be posted on a bulletin board (BBS) of a communication network and provided by superimposing it on a carrier wave via the network. Then, the above-described processing can be executed by starting the program thus provided and executing it in the same manner as other application programs under the control of the OS.

It is a figure which shows the heat processing apparatus of embodiment of this invention. It is a figure which shows the structure of the control part of FIG. It is the figure which showed the recipe explaining the formation method of the silicon carbonitride film | membrane of embodiment of this invention. It is a figure which shows the deposition of a silicon carbonitride film. It is a figure which shows the etching rate with respect to DHF of a silicon carbonitride film.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 2 Reaction tube 3 Top part 4 Exhaust port 5 Exhaust pipe 6 Lid body 7 Heat insulation cylinder 8 Heater 9 Support body 10 Rotary table 11 Wafer boat 12 Rotation support | pillar 13 Rotation mechanism 14 Rotation shaft 15 Rotation introduction part 16 Heating heater 17 Process gas introduction pipe 18 Purge gas supply pipe 100 Control unit 111 Recipe storage unit 112 ROM
113 RAM
114 I / O port 115 CPU
116 Bus 121 Operation Panel 122 Temperature Sensor 123 Pressure Gauge 124 Heater Controller 125 MFC Control Unit 126 Valve Control Unit 127 Vacuum Pump 128 Boat Elevator W Semiconductor Wafer

Claims (9)

The reaction chamber in which the processing body is stored is set to a predetermined temperature and a predetermined pressure, and supplies the Jikuroroshira emissions and isopropylamine in the reaction chamber to form a silicon carbonitride film on the target object, that A method of forming a silicon carbonitride film characterized by the above.   The reaction chamber is set to 600 ° C. to 800 ° C., dichlorosilane and isopropylamine are supplied into the reaction chamber, and a silicon carbonitride film is formed on the object to be processed. A method for forming a silicon carbonitride film as described. The method for forming a silicon carbonitride film according to claim 1 or 2 , wherein the pressure in the reaction tube is set to 1.33 Pa to 1330 Pa. Wherein the reaction chamber, the method of forming a silicon carbonitride film according to any one of claims 1 to 3 wherein the workpiece is a plurality accommodated, it is characterized. A reaction chamber containing a workpiece and having a heating unit that can be set to a predetermined temperature;
And silicon source supply means for supplying Jikuroroshira in to the reaction chamber,
Isopropylamine supply means for supplying isopropylamine into the reaction chamber;
An exhaust pipe connected to the reaction chamber, and exhaust means capable of exhausting the gas in the reaction chamber from the exhaust pipe and setting the reaction chamber to a predetermined pressure;
The silicon source supply means and the isopropylamine supply means in a state where the heating section is controlled to set the reaction chamber at a predetermined temperature, and the exhaust means is controlled to set the reaction chamber at a predetermined pressure. by controlling, and said Jikuroroshira ting the isopropylamine is fed into the reaction chamber, and control means for forming a silicon carbonitride film on the target object,
An apparatus for forming a silicon carbonitride film, comprising: Before SL control unit, the control the heating unit to set the reaction chamber 600 ° C. to 800 ° C., that the formation apparatus of the silicon carbonitride film of claim 5, wherein. The apparatus for forming a silicon carbonitride film according to claim 5 or 6 , wherein the control unit controls the exhaust means to set the pressure in the reaction chamber to 1.33 Pa to 1330 Pa. Wherein the reaction chamber, the workpiece is a plurality accommodated, that forming apparatus of the silicon carbonitride film according to any one of claims 5 to 7, characterized in. Computer
Accommodates the object to be processed, the source of silicon supply means for supplying Jikuroroshira in to the reaction chamber having a heating unit can be set to a predetermined temperature,
Isopropylamine supply means for supplying isopropylamine into the reaction chamber,
An exhaust unit that has an exhaust pipe connected to the reaction chamber and exhausts the gas in the reaction chamber from the exhaust pipe to set the reaction chamber at a predetermined pressure;
The silicon source supply means and the isopropylamine supply means in a state where the heating section is controlled to set the reaction chamber at a predetermined temperature, and the exhaust means is controlled to set the reaction chamber at a predetermined pressure. by controlling, the Jikuroroshira ting and the isopropylamine is fed into the reaction chamber, said control means for forming a silicon carbonitride film on the target object,
Program to function as.

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