JP4953590B2 - Test apparatus and device manufacturing method - Google Patents

Description

  The present invention relates to a test apparatus for testing a device under test such as a semiconductor circuit, and a device manufacturing method for manufacturing an electronic device such as a semiconductor circuit. In particular, the present invention relates to a test apparatus for testing an open defect of a device under measurement, and a device manufacturing method for an electronic device with reduced open defects.

2. Description of the Related Art Conventionally, a test for detecting an open defect in a wiring such as a via hole or a pattern in a device under test such as a semiconductor circuit has been performed. As an example of the test, a method of measuring the internal state of a device under measurement using a scanning electron microscope (SEM) is known (for example, see Non- Patent Document 1). For example, when detecting the conduction state of the bottom of the via hole, it is possible to detect an internal open defect by detecting SiO 2 remaining at the bottom of the via hole.

“Inspection / analysis solution to support high-quality and high-efficiency production of semiconductor devices”, Hitachi review, April 2003, p. 11-16

  However, when performing a test using SEM, it is necessary to place the device under measurement in a vacuum and perform the measurement in situ. For this reason, the test efficiency and workability were poor. In particular, when testing a plurality of devices under measurement continuously, the test efficiency is lowered. Further, when such a test is performed in the device manufacturing process, the manufacturing efficiency is significantly deteriorated.

  Therefore, an object of the present invention is to provide a test apparatus and a device manufacturing method that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.

  In order to solve the above-described problem, in the first embodiment of the present invention, a test apparatus for testing an open failure of a device under measurement, which is formed on the surface of a substrate of the device under test to be tested for an open failure. A charge supply section for applying a charge to a measurement region including the wiring, a measurement probe provided to face the surface of the device to be measured, formed of a conductive material, a measurement probe, and a measurement probe and a wiring The probe drive unit that changes the distance of the probe, the measurement unit that measures the potential of the measurement probe, and the wiring that has an open defect based on the change in the potential of the measurement probe when the probe drive unit moves the measurement probe There is provided a test apparatus including a determination unit that determines whether or not.

  The determination unit may determine that the wiring has the open defect when the amount of change in potential of the measurement probe is equal to or greater than a predetermined reference value. The probe driving unit may move the measurement probe in a direction substantially perpendicular to the surface of the device under measurement at a position facing the wiring.

  The probe driving unit may move the measurement probe in a plane substantially parallel to the surface of the device under measurement. The measurement area includes a plurality of wirings, the probe driving unit may cause the measurement probe to scan the measurement area, and the determination unit may determine whether or not each wiring has an open defect.

  The positions in the first direction in the plane substantially parallel to the surface of the device under measurement have a predetermined distance, respectively, and the positions in the second direction orthogonal to the first direction in the plane are sequentially adjacent to each other. The probe driving unit scans the plurality of measurement probes in the first direction, and the determination unit detects a change in potential for each measurement probe and opens it to each wiring. It may be determined whether there is a defect.

  The measurement area includes a plurality of wires, and the area of the surface of the measurement probe that faces the measurement area is substantially the same as the area of the measurement area, and the probe drive unit measures the measurement probe. The determination unit may determine whether there is an open defect in the measurement region by moving the measurement device in a direction substantially perpendicular to the surface of the device under measurement at a position facing the region.

  The probe drive unit may change the distance between the via hole of the wiring and the measurement probe, and the determination unit may determine whether or not the via hole has an open defect. The area to be measured includes a plurality of wirings, and further includes a mask storage unit that preliminarily stores measurement mask information indicating a floating wiring in which the floating state is normal among the plurality of wirings. The measurement probe may be sequentially scanned with respect to the other wiring.

  According to a second aspect of the present invention, there is provided a manufacturing method for manufacturing an electronic device, the step of preparing a substrate for forming the electronic device, and the step of stacking the pattern layer of the electronic device on the substrate by a semiconductor process And a defect detection stage for detecting an open defect of the wiring formed in the pattern layer, and the defect detection stage includes an area to be measured including the wiring formed on the surface of the substrate of the electronic device to be tested for the open defect. In addition, a charge supply stage for applying a charge, a probe driving stage for moving a measurement probe formed of a conductive material so as to change the distance from the wiring at a position facing the wiring, and measuring the potential of the measurement probe Based on the change in potential of the measurement probe when the measurement probe is moved in the measurement stage and the probe driving stage, it is determined whether or not the wiring has the open defect. It provides a device manufacturing method and a determination step of constant to.

  In the stacking step, a plurality of pattern layers may be stacked on the surface of the substrate, and in the defect detection step, a wiring open defect in the pattern layer may be detected every time the pattern layer is stacked.

  According to a third aspect of the present invention, there is provided a test apparatus for testing an open defect of a device under measurement, which is provided to face a wiring formed on the surface of the substrate of the device under test to be tested for the open defect. A measurement probe formed of a conductive material, a power supply unit for applying an AC voltage to the measurement probe, a measurement unit for measuring an AC current flowing from the power supply unit to the measurement probe, and wiring based on the value of the AC current. A test apparatus is provided that includes a determination unit that determines whether there is an open defect.

  The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.

  Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the scope of claims, and all combinations of features described in the embodiments are included. It is not necessarily essential for the solution of the invention.

  FIG. 1 is a diagram illustrating an example of a configuration of a test apparatus 100 according to an embodiment of the present invention. The test apparatus 100 tests an open defect of the device under measurement 200 such as a semiconductor circuit. The test apparatus 100 includes a charge supply unit 10, a measurement probe 20, a probe drive unit 30, a measurement unit 40, a determination unit 50, and a mask storage unit 70.

  The charge supply unit 10 applies a charge to a measurement region including a wiring formed on the surface of the substrate of the device under measurement 200 to be tested for open defects. However, the charge supply unit 10 may give a charge to a region other than the region to be measured. That is, the charge supply unit 10 applies charge to at least the measurement region. In this example, the charge supply unit 10 charges the device under measurement 200 by irradiating the entire wafer of the device under measurement 200 with a weak ion beam. The charge supply unit 10 may be provided to face a surface on which the pattern of the device under measurement 200 is formed, and the surface may be irradiated with an ion beam. Here, the wiring includes, for example, a pattern wiring formed in the device under measurement 200 and a via hole that conducts each layer of the device under measurement 200. In this example, a case where a via hole opening defect is measured will be described.

  For example, the device under measurement 200 is a device in which pattern layers (220, 230, 240) are sequentially stacked on a silicon substrate 210. For example, the pattern layers (220, 240) are layers in which via holes (242, 244) are formed in the insulating film, and the pattern layer 230 is a metal layer in which pattern wiring and the like are formed. With such a structure, each layer is conducted. Further, when performing a test, the silicon substrate 210 may be grounded.

  When a charge is applied to the surface of the device under measurement 200, the charge flows to the ground potential via the via holes (242, 244). However, for example, when there is an open defect due to the insulating film 246 between the via hole 242 and the pattern layer 230, the charge given to the via hole 242 remains in the via hole 242.

  The measurement probe 20 is provided to face the surface of the device under measurement 200. The surface is, for example, a surface on which the charge supply unit 10 irradiates an ion beam. The measurement probe 20 is made of a conductive material. The probe driving unit 30 moves the measurement probe 20 and changes the distance between the measurement probe 20 and the wiring such as the via hole 242. For example, the measurement probe 20 may be provided to face the via hole 242 to be measured for open defects, and the probe driving unit 30 may vibrate the measurement probe 20 in a direction perpendicular to the surface of the device under measurement 200.

  When charge remains in the via hole 242, an electric field is generated by the charge. In such a case, when the distance between the via hole 242 and the measurement probe 20 is changed, the potential of the measurement probe 20 is changed by the electric field. That is, when the open failure occurs in the via hole 242, the potential of the measurement probe 20 changes as the measurement probe 20 moves, and when the open failure does not occur, the potential of the measurement probe 20 does not change.

  The measurement unit 40 measures the potential of the measurement probe 20. Then, the determination unit 50 determines whether the via hole 242 has an open defect based on a change in the potential of the measurement probe 20 when the probe driving unit 30 moves the measurement probe 20. The test apparatus 100 may perform the measurement for each via hole formed on the surface of the device under measurement 200.

  In this example, the opening failure of the via hole has been described, but the opening failure of the pattern wiring can be similarly detected. That is, when an open defect occurs in the pattern wiring, the pattern wiring enters a floating state, and charges remain in the pattern wiring. Therefore, by changing the distance between the measurement probe 20 and the pattern wiring, it is possible to measure whether or not an open defect has occurred in the pattern wiring.

  Further, when a plurality of wirings are included in the measurement region of the device under measurement 200, the probe driving unit 30 may cause the measurement probe 20 to scan the entire measurement region. In this case, the determination unit 50 determines whether each wiring scanned by the measurement probe 20 has an open defect.

  In addition, there is a wiring in which the floating state is normal in the pattern wiring and the like. The mask storage unit 70 stores in advance measurement mask information indicating a floating wiring in which the floating state is normal among the wirings formed in the device under measurement 200. The determination unit 50 may measure whether or not an open defect has occurred in each wiring based on the measurement mask information.

  Further, the probe driving unit 30 may scan the measurement probe 20 in order to sequentially measure the wirings other than the floating wirings among the wirings of the device under measurement 200. In this case, the determination unit 50 may control the probe driving unit 30 based on the measurement mask information. The determination unit 50 may control the timing at which the charge supply unit 10 irradiates an ion beam or the like.

  Further, the determination unit 50 may acquire position information of the measurement probe 20 from the probe driving unit 30. In this case, it is possible to determine in which wiring an open defect has occurred.

  FIG. 2A and FIG. 2B are diagrams for explaining an example of the operation of the measurement probe 20 when an open defect is detected. In this example, a case where an open defect of the via hole 242 is detected will be described. As shown in FIG. 2A, the probe driving unit 30 may move the measurement probe 20 in a direction substantially perpendicular to the surface of the device under measurement 200 at a position facing the via hole 242. For example, the probe drive unit 30 may vibrate the measurement probe 20 in the direction at the position.

  Further, when there are a plurality of wirings in the measurement region, the probe driving unit 30 sequentially scans the measurement probes 20 at positions facing the respective wirings to be measured. Then, the measurement probe 20 is vibrated in a direction substantially perpendicular to the surface of the device under measurement 200 at a position facing each wiring.

  When charges remain in the via hole 242, the potential of the measurement probe 20 increases as the distance between the measurement probe 20 and the via hole 242 decreases, and the potential of the measurement probe 20 decreases as the distance increases. The determination unit 50 may determine that the via hole 242 has an open defect when the amount of change in potential of the measurement probe 20 is equal to or greater than a predetermined reference value. The larger the distance variation amount, the larger the potential variation amount of the measurement probe 20. Therefore, the reference value may be determined according to the distance variation amount between the measurement probe 20 and the via hole 242. The reference value may be further determined based on the area of the measurement probe 20 and the amount of charge supplied by the charge supply unit 10.

  Even when there is no open failure in the via hole 242, when the open failure occurs in the wiring near the via hole 242, the potential of the measurement probe 20 may fluctuate due to the charge remaining in the wiring. is there. However, the amount of variation in the distance between the via hole 242 to be measured and the measurement probe 20 is different from the amount of variation in the distance between the nearby wiring and the measurement probe 20. For this reason, by determining the reference value based on the fluctuation amount of the distance, it is possible to eliminate the influence of the fluctuation of the potential due to the open defect of the nearby wiring and detect the open defect of the wiring to be measured. Thereby, the position of the wiring in which the open defect has occurred can be detected with high accuracy.

  Further, as shown in FIG. 2B, the probe driving unit 30 may move the measurement probe 20 in a plane substantially parallel to the surface of the device under measurement 200. Even in such a form, the distance between the measurement probe 20 and the via hole 242 varies. For this reason, when electric charges remain in the via hole 242, the potential of the measurement probe 20 varies. When there are a plurality of wirings in the measurement region, the probe driving unit 30 may move the measurement probe 20 so as to scan the entire measurement region.

  FIG. 3 is a diagram illustrating an example of a change in potential of the measurement probe 20. In FIG. 3, the horizontal axis indicates the distance L between the measurement probe 20 and the wiring to be measured, and the vertical axis indicates the potential V of the measurement probe 20. When an open failure occurs in the wiring to be measured, the potential of the measurement probe 20 is maximized when the distance L is minimized.

  FIG. 4 is a diagram illustrating an example of a method for detecting an open defect in the device under measurement 200. In this example, the test apparatus 100 includes a plurality of measurement probes 20. The plurality of measurement probes 20 are provided at positions in a first direction within a plane substantially parallel to the surface of the device under measurement 200, each having a predetermined distance x. In addition, the plurality of measurement probes 20 are provided adjacent to each other at positions in a second direction substantially orthogonal to the first direction in the plane. Then, the probe driving unit 30 scans the plurality of measurement probes 20 in the first direction. The determination unit 50 detects a change in potential for each measurement probe 20 and determines whether or not there is an open defect in the wiring at the position scanned by each measurement probe 20. With such a configuration, the measurement resolution in the second direction can be maintained high, and interference between the measurement probes 20 can be reduced.

  FIG. 5 is a diagram illustrating another example of a method for detecting an open defect in the device under measurement 200. In this example, the area of the surface of the measurement probe 20 facing the measurement region is substantially the same as the area of the measurement region. Further, the area of the surface of the measurement probe 20 facing the device under measurement 200 may be substantially the same as the area of the device under measurement 200.

  The probe driving unit 30 moves the measurement probe 20 in a direction substantially perpendicular to the surface of the device under measurement 200 at a position facing the region under measurement. With such a configuration, the determination unit 50 can determine whether or not at least one open defect exists in the measurement region. For example, as shown in FIG. 5, when an open defect occurs in one via hole 242 among the plurality of via holes 242 formed in the measurement region, at least in the measurement region due to a change in the potential of the measurement probe 20. It can be determined that one open failure has occurred. The method may be performed for each of a plurality of measurement areas. According to this example, it is possible to efficiently test whether there is an open defect in the measurement area.

  FIG. 6 is a flowchart showing an example of a device manufacturing method according to the embodiment of the present invention. In the device manufacturing method, first, in a substrate preparation step S300, a substrate on which an electronic device is to be formed is prepared. The substrate is, for example, the silicon substrate 210 described in FIG.

  Next, in the stacking step S302, a pattern layer of an electronic device is formed on the substrate by a semiconductor process. Next, in the defect detection step S304, an open defect of the wiring formed in the pattern layer is detected. In the defect detection step S304, as described with reference to FIGS. 1 to 5, an open circuit defect may be detected. For example, in the defect detection step S304, a charge supply step for applying a charge to a region to be measured including a wiring formed on the surface of the electronic device substrate to be tested for an open defect, and a measurement probe formed of a conductive material are provided. A probe driving stage that moves the distance from the wiring to change at a position facing the wiring, a measurement stage that measures the potential of the measurement probe, and a measurement probe when the measurement probe is moved in the probe driving stage And a determination step of determining whether or not the wiring has an open defect based on the change in potential.

  In the stacking step S302, a plurality of pattern layers may be stacked on the surface of the substrate. In this case, in the defect detection step, it is preferable to detect a wiring open defect in the pattern layer every time the pattern layer is stacked in the stacking step S302.

  Then, in the defect detection step S304, when an open defect is detected, the manufacture of the electronic device is stopped (S306). Further, in the defect detection step S304, if no open defect is detected, it is determined whether all pattern layers to be stacked on the substrate have been stacked (S308). When all the pattern layers are laminated, the manufacturing of the electronic device is finished. If all the pattern layers are not stacked, the process of S302 to S306 is repeated, and an open defect test is performed every time the pattern layer is formed. According to such a device manufacturing method, manufacturing of an electronic device in which a defect has occurred can be interrupted, so that manufacturing efficiency can be improved.

  FIG. 7 is a diagram illustrating another example of the configuration of the test apparatus 100. The test apparatus 100 in this example includes a measurement probe 20, a probe driving unit 30, a determination unit 50, and a power supply unit 60. The configuration and function of the measurement probe 20 may be the same as the measurement probe 20 described with reference to FIG.

  The probe driving unit 30 moves the measurement probe 20 to a position facing the wiring to be measured. In this example, the probe driving unit 30 moves the measurement probe 20 to a position facing the via hole 242. As a result, a capacitance component C <b> 1 is generated between the via hole 242 and the measurement probe 20. In addition, when an open defect occurs in the via hole 242, a capacitance component C2 is also generated between the via hole 242 and the pattern layer 230. Since the capacitive component C1 and the capacitive component C2 are equivalently connected in series, the capacitive component viewed from the measurement probe 20 varies depending on whether or not an open failure occurs in the via hole 242.

  The power supply unit 60 applies an AC voltage to the measurement probe 20. Since a capacitive component is generated between the measurement probe 20 and the via hole 242, an alternating current corresponding to the alternating voltage flows through the measurement probe 20. The determination unit 50 determines whether or not an open defect has occurred in the via hole 242 based on the value of the alternating current.

  As described above, when an open defect occurs in the via hole 242, the capacitance component viewed from the measurement probe 20 is reduced as compared to a case where no open defect occurs in the via hole 242. For this reason, it is possible to determine whether or not an open failure has occurred in the via hole 242 based on the value of the alternating current. For example, the determination unit 50 may be given in advance as a reference value the value of the alternating current that should be detected when there is no open failure in the via hole 242. In this case, when the value of the detected alternating current is smaller than the reference value, the determination unit 50 may determine that an open defect has occurred in the via hole 242.

  Further, the probe driving unit 30 may sequentially scan the measurement probe 20 with respect to a plurality of via holes formed under the same conditions. The determination unit 50 may determine whether or not open defects have occurred in these via holes based on the values of the alternating current detected for a plurality of via holes formed under the same conditions.

  For example, when variation in the value of the alternating current measured for a plurality of via holes formed under the same condition is not within a predetermined range, it is determined that at least one of the plurality of via holes has an open defect. It's okay.

  FIG. 8 is a diagram illustrating an example of a method for generating measurement mask information stored in the mask storage unit 70. In this example, the test apparatus 100 measures a plurality of devices under measurement 200 having the same pattern. The probe driving unit 30 may cause the measurement probe 20 to scan the entire region of the surface of the device under measurement 200.

  The determination unit 50 stores the measurement result indicating the position 248 where the open defect is detected in all the regions of the surface of each device under measurement 200. In each measurement result, when an open failure is detected at the same position 248, the measurement mask information is generated assuming that the wiring at the position is normally in a floating state.

  The determination unit 50 determines that the wiring at the position is in a floating state when the ratio of the measurement results obtained by detecting the open failure at the same position is greater than or equal to a predetermined reference value. Measurement mask information may be generated assuming that is normal.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  As is apparent from the above, according to the present invention, it is possible to efficiently detect a wiring open failure in a device under measurement. Moreover, the open defect can be detected in a non-contact manner. In addition, an electronic device free from open defects can be efficiently manufactured.

It is a figure which shows an example of a structure of the test apparatus 100 which concerns on embodiment of this invention. It is a figure explaining an example of operation | movement of the measurement probe 20 in the case of detecting an open defect. 6 is a diagram illustrating an example of a change in potential of the measurement probe 20. FIG. It is a figure which shows an example of the method of detecting the open defect in the to-be-measured device 200. FIG. It is a figure which shows the other example of the method of detecting the open defect in the to-be-measured device. It is a flowchart which shows an example of the device manufacturing method which concerns on embodiment of this invention. 3 is a diagram illustrating another example of the configuration of the test apparatus 100. FIG. It is a figure which shows an example of the production | generation method of the measurement mask information which the mask storage part 70 stores.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Charge supply part, 20 ... Measurement probe, 30 ... Probe drive part, 40 ... Measurement part, 50 ... Determination part, 60 ... Power supply part, 70 ... Mask storage , 100 ... Test apparatus, 200 ... Device to be measured, 210 ... Silicon substrate, 220, 230,240 ... Pattern layer, 242, 244 ... Via hole, 246 ... Insulating film

Claims (9)

A test apparatus for testing an open failure of a device under test,
A charge supply unit for applying an electric charge to a measurement region including a wiring formed on a surface of a substrate of the device under measurement to be tested for the open defect;
A measurement probe provided opposite to the surface of the device to be measured and formed of a conductive material;
A probe driver that moves the measurement probe in a direction substantially perpendicular to the surface of the device under measurement at a position facing the wiring, and changes a distance between the measurement probe and the wiring;
A measurement unit for measuring the potential of the measurement probe;
A test apparatus comprising: a determination unit that determines whether the wiring has the open defect based on a change in potential of the measurement probe when the probe driving unit moves the measurement probe. A test apparatus for testing an open failure of a device under test,
A charge supply unit for applying a charge to a region to be measured including a plurality of wirings formed on a surface of a substrate of the device under measurement to be tested for the open defect;
A measurement probe provided opposite to the surface of the device under measurement, formed of a conductive material, and having an area of a surface facing the region under measurement approximately the same as the area of the region under measurement;
A probe driving unit that moves the measurement probe in a direction substantially perpendicular to the surface of the device under measurement at a position facing the region under measurement, and changes the distance between the measurement probe and the region under measurement;
A measurement unit for measuring the potential of the measurement probe;
A test apparatus comprising: a determination unit that determines whether or not the measurement target region has the open defect based on a change in potential of the measurement probe when the probe driving unit moves the measurement probe. A test apparatus for testing an open failure of a device under test,
A charge supply unit for applying a charge to a region to be measured including a plurality of wirings formed on a surface of a substrate of the device under measurement to be tested for the open defect;
A measurement probe provided opposite to the surface of the device to be measured and formed of a conductive material;
A mask storage unit that stores in advance measurement mask information indicating a floating wiring in which the floating state is normal among the plurality of wirings;
A probe driving unit that moves the measurement probe in a plane substantially parallel to the surface of the device to be measured, and changes a distance between the measurement probe and the wiring;
A measurement unit for measuring the potential of the measurement probe;
A determination unit that determines whether the wiring has the open defect based on a change in potential of the measurement probe when the probe driving unit moves the measurement probe; and
The probe driving unit is a test apparatus that sequentially scans the measurement probe with respect to the wiring other than the floating wiring. 4. The test apparatus according to claim 1, wherein the determination unit determines that the open defect is present when a change amount of the potential of the measurement probe is equal to or greater than a predetermined reference value. 5. . The probe driver changes the distance between the via hole of the wiring and the measurement probe,
The test apparatus according to claim 1, wherein the determination unit determines whether the via hole has the open defect. A device manufacturing method for manufacturing an electronic device, comprising:
Providing a substrate for forming the electronic device;
A lamination step of forming a pattern layer of the electronic device on the substrate by a semiconductor process;
A failure detection step of detecting an open failure of the wiring formed in the pattern layer,
The defect detection step includes:
A charge supplying step for applying a charge to a measurement region including the wiring formed on a surface of a substrate of the electronic device to be tested for the open defect;
A probe driving stage in which a measurement probe formed of a conductive material is moved at a position facing the wiring in a direction substantially perpendicular to the surface of the electronic device so as to change a distance from the wiring; and
A measurement step of measuring the potential of the measurement probe;
A determination step of determining whether or not the wiring has the open defect based on a change in potential of the measurement probe when the measurement probe is moved in the probe driving step. A device manufacturing method for manufacturing an electronic device, comprising:
Providing a substrate for forming the electronic device;
A lamination step of forming a pattern layer of the electronic device on the substrate by a semiconductor process;
A failure detection step of detecting an open failure of the wiring formed in the pattern layer,
The defect detection step includes:
A charge supplying step for applying a charge to a region to be measured including a plurality of the wirings formed on a surface of a substrate of the electronic device to be tested for the open defect;
A measurement probe, which is provided facing the surface of the electronic device and is made of a conductive material and has a surface facing the region to be measured that is substantially the same as the area of the region to be measured, faces the region to be measured. A probe driving stage that moves in a direction substantially perpendicular to the surface of the electronic device at a position to be moved so that the distance from the measurement region changes,
A measurement step of measuring the potential of the measurement probe;
A device manufacturing method comprising: a determination step of determining whether or not the measurement target region has the open defect based on a change in potential of the measurement probe when the measurement probe is moved in the probe driving step. . A device manufacturing method for manufacturing an electronic device, comprising:
Providing a substrate for forming the electronic device;
A lamination step of forming a pattern layer of the electronic device on the substrate by a semiconductor process;
A failure detection step of detecting an open failure of the wiring formed in the pattern layer,
The defect detection step includes:
A charge supplying step for applying a charge to a region to be measured including a plurality of the wirings formed on a surface of a substrate of the electronic device to be tested for the open defect;
A mask storing step for preliminarily storing measurement mask information indicating a floating wiring in which the floating state is normal among the plurality of wirings;
A probe driving stage for moving a measurement probe formed of a conductive material in a plane substantially parallel to the surface of the electronic device so as to change a distance from the wiring; and
A measurement step of measuring the potential of the measurement probe;
A determination step of determining whether the wiring has the open defect based on a change in potential of the measurement probe when the measurement probe is moved in the probe driving step, and
A device manufacturing method of sequentially scanning the measurement probe with respect to the wiring other than the floating wiring in the probe driving stage. In the stacking step, a plurality of the pattern layers are stacked on the surface of the substrate,
9. The device manufacturing method according to claim 6, wherein the defect detection stage detects an open defect of the wiring in the pattern layer every time the pattern layer is stacked.

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