JP4889883B2 - Film forming method and film forming apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is used for manufacturing an EL element having a structure in which an anode, a cathode, and a luminescent material from which EL (Electro Luminescence) is obtained, in particular, a self-luminous material (hereinafter referred to as EL material) is sandwiched. The present invention relates to a light emitting device having a film device and an EL element, and a manufacturing method thereof. Note that in this specification, an EL material refers to a material from which fluorescence or phosphorescence can be obtained by applying an electric field.
[0002]
In the present invention, the light emitting device refers to an image display device or a light emitting device using an EL element. In addition, a connector, such as an anisotropic conductive film (FPC: Flexible Printed Circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package), is attached to the EL element, and printed wiring is attached to the end of the TAB tape or TCP. It is assumed that the light-emitting device also includes a module provided with a plate or a module in which an IC (integrated circuit) is directly mounted on a light-emitting element by a COG (Chip On Glass) method.
[0003]
[Prior art]
In recent years, a technology for forming a semiconductor element on a substrate has greatly advanced, and application development to an active matrix display device (light emitting device) has been advanced. Note that a semiconductor element refers to an element having a switching function using a semiconductor material and including a single element or a plurality of elements, and is a transistor, particularly a field effect transistor, typically a MOS (Metal Oxide Semiconductor). Examples include a transistor and a thin film transistor (TFT). In particular, a TFT using a polysilicon film has higher field effect mobility (also referred to as mobility) than a conventional TFT using an amorphous silicon film, and thus can operate at high speed. For this reason, it is possible to control a pixel, which has been conventionally performed by a drive circuit outside the substrate, with a drive circuit formed on the same substrate as the pixel.
[0004]
Such an active matrix display device has various advantages such as a reduction in manufacturing cost, a reduction in size of an electro-optical device, an increase in yield, and a reduction in throughput by forming various circuits and elements on the same substrate. can get.
[0005]
Furthermore, research on active matrix light-emitting devices (or EL displays) having EL elements as self-luminous elements has been actively conducted.
[0006]
Note that in this specification, the EL element included in the light-emitting device has a structure in which an EL layer is sandwiched between a pair of electrodes (anode and cathode); however, the EL layer usually has a stacked structure. A typical example is a “hole transport layer / light emitting layer / electron transport layer” stacked structure proposed by Tang et al. Of Kodak Eastman Company. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.
[0007]
In addition, the hole injection layer / hole transport layer / light emitting layer / electron transport layer, or hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer are laminated in this order on the anode. Structure may be sufficient. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer.
[0008]
In this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, and the like are all included in the EL layer.
[0009]
Then, a predetermined voltage is applied to the EL layer having the above structure from the pair of electrodes, whereby recombination of carriers occurs in the light emitting layer to emit light. Note that in this specification, a light-emitting element formed using an anode, an EL layer, and a cathode is referred to as an EL element.
[0010]
Since an EL layer included in an EL element is accelerated by heat, light, moisture, oxygen, or the like, generally, in manufacturing an active matrix light-emitting device, an EL element is formed after a wiring or a TFT is formed in a pixel portion. It is formed.
[0011]
Various methods have been proposed for forming (depositing) the EL layer. Examples thereof include a vacuum deposition method, a sputtering method, a spin coating method, a roll coating method, a casting method, an LB method, an ion plating method, a dipping method, an ink jet method, and a printing method. Among these, the printing method is an effective method because an EL layer can be selectively formed.
[0012]
After the EL element is formed, the substrate (EL panel) provided with the EL element and the cover material are bonded to each other so that the EL element is not exposed to the outside air and sealed (packaged) with a sealing material or the like.
[0013]
Once the airtightness is improved by processing such as packaging, an active matrix is attached by attaching a connector (FPC, TAB, etc.) for connecting a terminal routed from an element or circuit formed on the substrate and an external signal terminal. The mold light emitting device is completed.
[0014]
[Problems to be solved by the invention]
When the printing method is used for forming the EL layer, if the volatility of the solvent for dissolving the EL material is high, the printing material changes with time, and it becomes difficult to process a large number of substrates. Accordingly, an object of the present invention is to provide means for solving such problems.
[0015]
[Means for Solving the Invention]
In order to achieve the above object, in the present invention, the pressure of a processing chamber (or called a printing chamber) for performing processing for forming an EL layer using a printing method is set to atmospheric pressure (normal pressure) or higher than atmospheric pressure. The EL layer is formed by a printing method in a pressurized state. Note that the processing chamber is connected to a pressure adjusting mechanism, and the pressure adjusting mechanism in the present invention is a state in which the pressure in the processing chamber is at or near atmospheric pressure (typically 1 to 2 atm, preferably 1). .1 to 1.5 atmospheres).
[0016]
Specifically, it comprises a compressor for compressing gas and introducing it into the processing chamber, and a sensor for opening and closing the exhaust valve according to the pressure after measuring the pressure in the processing chamber. Note that in this specification, a valve for exhausting the gas in the processing chamber is referred to as an exhaust valve. In this specification, a sensor refers to a device that measures a pressure in a processing chamber and inputs a control signal in accordance with the value. Here, the opening and closing of the control signal from the sensor is input to the exhaust valve.
[0017]
In addition, as the pressure adjusting mechanism, it is possible to pressurize the processing chamber to a desired pressure by heating the processing chamber with a heater or the like. In this case, the signal from the sensor is input to a variable resistor for controlling the power applied from the power source to the heater.
[0018]
In the present invention, the process chamber is filled with an inert gas, or the EL layer is formed in a solvent atmosphere.
[0019]
Note that the inert gas refers to a gas having poor reactivity, and specifically refers to a rare gas such as argon or helium, nitrogen, or the like. The solvent atmosphere refers to a state in which the solvent is filled in a space or a processing chamber in a gaseous state.
[0020]
Further, not only a processing chamber (printing chamber) for forming an EL layer but also a processing chamber (drying chamber) for drying an EL layer formed by a printing method, or a cathode or an anode of an EL element. And a processing chamber (sealing chamber) for sealing the formed EL element, all of which can be processed in the same apparatus.
[0021]
The printing method in this specification refers to a method of forming an EL layer on an electrode using printing means such as letterpress printing, intaglio printing, or screen printing. In particular, letterpress printing is used for EL. A method of forming a layer is preferred. Here, a printing method using relief printing in the present invention (letter printing method) will be described with reference to FIG.
[0022]
FIG. 1 shows a processing chamber for forming an EL layer by a relief printing method in the present invention. Note that in this specification, a processing chamber in which a printing apparatus for forming an EL layer by a printing method is installed is referred to as a printing chamber 118.
[0023]
In FIG. 1, 110 is an anilox roll, 111 is a doctor bar (also referred to as a doctor blade), and a mixture of an EL material and a solvent (hereinafter referred to as EL formation) 112 is brought near the surface of the anilox roll 110 by the doctor bar 111. It is accumulated. Note that the EL material here is a fluorescent organic compound, and generally refers to an organic compound called a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, or an electron injection layer.
[0024]
As shown in FIG. 1B, a mesh-shaped groove (hereinafter referred to as a mesh) 110a is provided on the surface of the anilox roll 110. By rotating in the direction of arrow A, the mesh 110a causes the EL formed product 112 to move. Hold on the surface. The dotted line shown on the surface of the anilox roll 110 means that the EL formed product is held.
[0025]
Reference numeral 113 denotes a printing roll, and 114 denotes a relief plate. The relief plate 114 has irregularities formed on its surface by etching or the like. This state is shown in FIG. In the case of FIG. 1C, pixel patterns 114a are formed in a plurality of locations on the relief plate 114 in order to manufacture a plurality of light emitting devices on one substrate. Furthermore, when the pixel portion pattern 114a is enlarged, convex portions 114b are formed at positions corresponding to a plurality of pixels.
[0026]
The anilox roll 110 keeps holding the EL formation 112 on the mesh 110a while rotating. On the other hand, the printing roll 113 rotates in the direction of arrow B, and only the convex portion 114b of the relief plate 114 comes into contact with the mesh 110a. At this time, the EL formed product 112 is applied to the surface of the convex portion 114b.
[0027]
Then, the EL formed product 112 is printed at a position where the substrate 115 that moves horizontally (in the direction of arrow C) at the same speed as the printing roll 113 and the projection 114b are in contact with each other. As a result, the EL formation 112 is printed on the substrate 115 in a matrix.
[0028]
Thereafter, heat treatment is performed in a separate treatment chamber (referred to as a drying chamber in this specification) under a nitrogen atmosphere at atmospheric pressure to vaporize the solvent contained in the EL formation 112 and leave the EL material. For this reason, it is necessary to use a solvent that vaporizes at a temperature lower than the glass transition temperature (Tg) of the EL material. The film thickness of the EL layer finally formed is determined by the viscosity of the EL formed product. In this case, the viscosity can be adjusted by selecting a solvent. ^-3 ~ 5x10 ^-2 Pa · s (preferably 1 × 10 ^-3 ~ 2x10 ^-2 Pa · s).
[0029]
Typical solvents for dissolving the EL material are toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butylcellosolve, cyclohexane, NMP (N-methyl-2-pyrrolidone), cyclohexanone. , Dioxane or THF (tetrahydrofuran).
[0030]
Furthermore, if there are many impurities that can be crystal nuclei in the EL product 112, the EL material is likely to be crystallized when the solvent is vaporized. Crystallization is not preferable because the light emission efficiency is lowered, and it is preferable that impurities are not contained in the EL formation 112 as much as possible.
[0031]
In order to reduce impurities, it is also important to clean as much as possible the environment during the purification of the solvent, the purification of the EL material, or the mixing of the solvent and the EL material. It is preferable to pay attention to the atmosphere of the printing device when printing the formed product.
[0032]
That is, when printing the EL formed product, the chamber (typically in the clean booth) in which the printing apparatus is installed is filled with an inert gas such as nitrogen, helium, or argon, or the EL material is dissolved. It is necessary to create a solvent atmosphere.
[0033]
When the inside of the printing chamber 118 is in a solvent atmosphere, the inside of the chamber can be in a solvent atmosphere by providing a solvent in the solvent tray 117 provided in the printing chamber 118.
[0034]
In the present invention, the inside of the printing chamber 118 filled with an inert gas or in a solvent atmosphere is in an atmospheric pressure state or a state close to atmospheric pressure (typically 1) by a pressure adjusting mechanism 116 provided in the printing chamber 118. ˜2 atm, preferably 1.1 to 1.5 atm).
[0035]
When the present invention is carried out, there is an advantage that the equipment is simplified and the maintenance is easy because an apparatus such as a vacuum vapor deposition apparatus that requires an evacuation facility is not required when depositing the EL material. .
[0036]
Note that the present invention can be applied to both an active matrix light-emitting device and a passive matrix light-emitting device (simple matrix type).
[0037]
DETAILED DESCRIPTION OF THE INVENTION
Next, the apparatus of the present invention for performing a series of processes from formation of an EL layer by printing to electrode formation and a sealing structure will be described with reference to FIG. 2 is a top view of a multi-chamber type film forming apparatus.
[0038]
In FIG. 2, reference numeral 201 denotes a transfer chamber. The transfer chamber 201 is provided with a transfer mechanism 202 to transfer the substrate 203. The transfer chamber 201 is in a reduced-pressure atmosphere, and is connected to each processing chamber by a gate. The transfer of the substrate to each processing chamber is performed by the transfer mechanism 202 when the gate is opened. In order to depressurize the transfer chamber 201, an exhaust pump such as an oil rotary pump, a mechanical booster pump, a turbo molecular pump, or a cryopump can be used, but a cryopump effective for removing moisture is preferable.
[0039]
Hereinafter, each processing chamber will be described. Since the transfer chamber 201 is in an atmospheric atmosphere, all the processing chambers directly connected to the transfer chamber 201 are provided with an exhaust pump (not shown). As the exhaust pump, the above-described oil rotary pump, mechanical booster pump, turbo molecular pump, or cryopump is used.
[0040]
First, reference numeral 204 denotes a load chamber for setting (installing) a substrate, which also serves as an unload chamber. The load chamber 204 is connected to the transfer chamber 201 by a gate 200a, and a carrier (not shown) on which a substrate 203 is set is disposed. It should be noted that the load chamber 204 may be distinguished for substrate loading and substrate unloading. The load chamber 204 includes the above-described exhaust pump and a purge line for introducing high-purity nitrogen gas or rare gas.
[0041]
Next, reference numeral 205 denotes a printing chamber for depositing an EL material by a printing method. The printing chamber 205 is connected to the transfer chamber 201 through the gate 200b. Note that a hole injection layer, a red light emitting layer, a green light emitting layer, and a blue light emitting layer can be formed in the printing unit 206 in the printing chamber 205. Note that any material may be used for the hole injection layer, the red light emitting layer, the green light emitting layer, and the blue light emitting layer.
[0042]
In the present invention, since a printing method is used as a method for forming the EL layer, a polymer material may be used as the EL material. Typical polymer materials include polymer materials such as polyparaphenylene vinylene (PPV), polyvinyl carbazole (PVK), and polyfluorene (PF).
[0043]
In order to form a hole injection layer, hole transport layer or light emitting layer made of a polymer material by a printing method, it is printed in the state of a polymer precursor and heated to convert it to an EL material made of a polymer material. To do. Then, a necessary EL material is stacked thereon by vapor deposition or the like to form a stacked EL layer.
[0044]
Specifically, as the hole transport layer, it is preferable to use polytetrahydrothiophenylphenylene which is a polymer precursor and to polyphenylene vinylene by heating. The film thickness may be 30 to 100 nm (preferably 40 to 80 nm). The light emitting layer is preferably cyanopolyphenylene vinylene for the red light emitting layer, polyphenylene vinylene for the green light emitting layer, and polyphenylene vinylene or polyalkylphenylene for the blue light emitting layer. The film thickness may be 30 to 150 nm (preferably 40 to 100 nm).
[0045]
It is also effective to provide copper phthalocyanine as a buffer layer between the electrode and the EL material formed thereon.
[0046]
However, the above example is an example of a material that can be used as the EL material of the present invention, and is not necessarily limited to this. In the present invention, an EL layer is formed by printing a mixture of an EL material and a solvent and evaporating and removing the solvent. Accordingly, any EL material may be used as long as the combination does not exceed the glass transition temperature of the EL layer when the solvent is vaporized.
[0047]
It is also effective to add an additive for increasing the viscosity of the EL formed product. Furthermore, as the EL material, a low molecular material can be used as long as it is soluble in a solvent.
[0048]
Further, when the EL layer is formed by printing, the EL layer is easily deteriorated due to the presence of moisture and oxygen. Therefore, it is necessary to eliminate such factors as much as possible. For this purpose, it is desirable to install the printing apparatus in a chamber (in this embodiment, a printing chamber) filled with an inert gas such as nitrogen, argon, and helium and perform printing in the atmosphere.
[0049]
The dew point of the inert gas used at this time is preferably −20 degrees or less, and more preferably −50 degrees or less.
[0050]
In order to uniformly form the EL formed product, it is also effective to make the printing chamber have a solvent atmosphere for forming the EL formed product. The solvent atmosphere can be formed by providing the solvent tray 216 with a solvent.
[0051]
At this time, the inside of the chamber filled with an inert gas or a solvent may be maintained at an atmospheric pressure state or a pressurized state (typically 1 to 2 atm, preferably 1.1 to 1.5 atm). The pressure is adjusted by the pressure adjustment mechanism 215. When the present invention is carried out, there is an advantage that the equipment is simplified and the maintenance is easy because an apparatus such as a vacuum vapor deposition apparatus that requires an evacuation facility is not required when depositing the EL material. .
[0052]
Next, the EL material formed in the printing chamber 205 is dried in the drying chamber 207. The drying chamber 207 is connected to the transfer chamber 201 via the gate 200c. The EL material on the substrate can be dried by placing the substrate on the hot plate portion 208 provided in the drying chamber 207.
[0053]
Next, reference numeral 209 denotes a vapor deposition chamber for forming a conductive film to be an anode or a cathode of the EL element by vapor deposition.
[0054]
The deposition chamber 209 is connected to the transfer chamber 201 through the gate 200d.
Specifically, a film such as MgAg or an Al—Li alloy film (alloy film of aluminum and lithium) is formed as a conductive film that serves as a cathode of the EL element in the film forming unit 210 in the vapor deposition chamber 209. it can.
[0055]
Note that it is possible to co-evaporate an element belonging to Group 1 or Group 2 of the periodic table and aluminum. Co-evaporation refers to an evaporation method in which an evaporation cell is heated at the same time and different substances are mixed in a film formation stage.
[0056]
Next, reference numeral 211 denotes a sealing chamber (also referred to as a sealing chamber or a glove box), which is connected to the load chamber 204 through a gate 200e. In the sealing chamber 211, a process for finally sealing the EL element in the sealed space is performed. This treatment is a treatment for protecting the formed EL element from oxygen and moisture, and means such as mechanical sealing with a sealing material or sealing with a thermosetting resin or an ultraviolet light curable resin is used.
[0057]
As the sealing material, glass, ceramics, plastic, or metal can be used, but when light is emitted to the sealing material side, it must be translucent. The sealing material and the substrate on which the EL element is formed are bonded together using a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a sealed space. It is also effective to provide a hygroscopic material typified by barium oxide in this sealed space.
[0058]
In addition, the space between the sealing material and the substrate on which the EL element is formed can be filled with a thermosetting resin or an ultraviolet light curable resin. In this case, it is effective to add a moisture absorbing material typified by barium oxide in the thermosetting resin or the ultraviolet light curable resin.
[0059]
In the film forming apparatus shown in FIG. 2, a mechanism (hereinafter referred to as an ultraviolet light irradiation mechanism) 212 for irradiating ultraviolet light is provided inside the sealing chamber 211, and emitted from the ultraviolet light irradiation mechanism 212. An ultraviolet light curable resin is cured by ultraviolet light. Further, the inside of the sealing chamber 211 can be decompressed by attaching an exhaust pump. In the case where the sealing step is mechanically performed by robot operation, mixing of oxygen and moisture can be prevented by performing it under reduced pressure. Conversely, the inside of the sealing chamber 211 can be pressurized. In this case, the pressure is increased while purging with high-purity nitrogen gas or rare gas to prevent oxygen or the like from entering from the outside air.
[0060]
Next, a delivery chamber (pass box) 213 is connected to the sealing chamber 211. A delivery mechanism (B) 214 is provided in the delivery chamber 213, and the substrate in which the EL element is sealed in the sealing chamber 211 is delivered to the delivery chamber 213. The delivery chamber 213 can also be decompressed by attaching an exhaust pump. The delivery chamber 213 is a facility for preventing the sealing chamber 211 from being directly exposed to the outside air, from which the substrate is taken out.
[0061]
By using the film formation apparatus as described above, a series of processes until the EL element is sealed in the sealed space is not exposed to the outside air, so that a highly reliable light-emitting device can be manufactured. However, the film forming apparatus shown here is one of the embodiments in the present invention, and does not limit the present invention.
[0062]
【Example】
[Example 1]
Here, a detailed description will be given of a method of simultaneously manufacturing a pixel portion and TFTs of a driving circuit (n-channel TFT and p-channel TFT) provided on the periphery of the pixel portion on the same substrate by implementing the present invention. 5 will be described.
[0063]
First, in this embodiment, a substrate 300 made of glass such as barium borosilicate glass represented by Corning # 7059 glass or # 1737 glass or aluminoborosilicate glass is used. Note that the substrate 300 is not limited as long as it is a light-transmitting substrate, and a quartz substrate may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used.
[0064]
Next, a base film 301 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate 300. Although a two-layer structure is used as the base film 301 in this embodiment, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. As the first layer of the base film 301, a plasma CVD method is used, and SiH _Four , NH _Three And N ₂ A silicon oxynitride film 301a formed using O as a reactive gas is formed to a thickness of 10 to 200 nm (preferably 50 to 100 nm). In this embodiment, a 50 nm thick silicon oxynitride film 301a (composition ratio Si = 32%, O = 27%, N = 24%, H = 17%) was formed. Next, as the second layer of the base film 301, a plasma CVD method is used, and SiH _Four And N ₂ A silicon oxynitride film 301b formed using O as a reaction gas is stacked to a thickness of 50 to 200 nm (preferably 100 to 150 nm). In this embodiment, a silicon oxynitride film 301b (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) having a thickness of 100 nm is formed.
[0065]
Next, semiconductor layers 302 to 305 are formed over the base film. The semiconductor layers 302 to 305 are formed by forming a semiconductor film having an amorphous structure by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like), and then performing a known crystallization process (laser crystallization method, heat A crystalline semiconductor film obtained by performing a crystallization method or a thermal crystallization method using a catalyst such as nickel) is formed by patterning into a desired shape. The semiconductor layers 302 to 305 are formed to have a thickness of 25 to 80 nm (preferably 30 to 60 nm). The material of the crystalline semiconductor film is not limited, but is preferably silicon (silicon) or silicon germanium (Si _X Ge _1-X (X = 0.0001 to 0.02)) It may be formed of an alloy or the like. In this example, a 55 nm amorphous silicon film was formed by plasma CVD, and then a solution containing nickel was held on the amorphous silicon film. This amorphous silicon film is dehydrogenated (500 ° C., 1 hour), then thermally crystallized (550 ° C., 4 hours), and further laser annealed to improve crystallization. Thus, a crystalline silicon film was formed. Then, semiconductor layers 302 to 305 were formed by patterning the crystalline silicon film using a photolithography method.
[0066]
Further, after forming the semiconductor layers 302 to 305, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.
[0067]
When a crystalline semiconductor film is formed by laser crystallization, a pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. When these lasers are used, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 300 Hz and the laser energy density is 100 to 400 mJ / cm. ² (Typically 200-300mJ / cm ² ). When a YAG laser is used, the second harmonic is used and the pulse oscillation frequency is set to 30 to 300 Hz, and the laser energy density is set to 300 to 600 mJ / cm. ² (Typically 350-500mJ / cm ² ) Then, when the laser beam condensed linearly with a width of 100 to 1000 μm, for example, 400 μm is irradiated over the entire surface of the substrate, the superposition ratio (overlap ratio) of the linear laser light at this time is 50 to 90%. Good.
[0068]
Next, a gate insulating film 306 that covers the semiconductor layers 302 to 305 is formed. The gate insulating film 306 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) with a thickness of 110 nm is formed by plasma CVD. Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.
[0069]
When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) and O ₂ The reaction pressure is 40 Pa, the substrate temperature is 300 to 400 ° C., and the high frequency (13.56 MHz) power density is 0.5 to 0.8 W / cm. ² And can be formed by discharging. The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by thermal annealing at 400 to 500 ° C. thereafter.
[0070]
Next, as illustrated in FIG. 3A, a first conductive film 307 with a thickness of 20 to 100 nm and a second conductive film 308 with a thickness of 100 to 400 nm are stacked over the gate insulating film 306. In this example, a first conductive film 307 made of a TaN film with a thickness of 30 nm and a second conductive film 308 made of a W film with a thickness of 370 nm were stacked. The TaN film was formed by sputtering, and was sputtered in a nitrogen-containing atmosphere using a Ta target. The W film was formed by sputtering using a W target. In addition, tungsten hexafluoride (WF ₆ It can also be formed by a thermal CVD method using In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and the resistivity of the W film is desirably 20 μΩcm or less. The resistivity of the W film can be reduced by increasing the crystal grains. However, when there are many impurity elements such as oxygen in the W film, the crystallization is hindered and the resistance is increased. Therefore, in this embodiment, a sputtering method using a target of high purity W (purity 99.9999%) is used, and the W film is formed with sufficient consideration so that impurities are not mixed in from the gas phase during film formation. By forming, a resistivity of 9 to 20 μΩcm could be realized.
[0071]
In this embodiment, the first conductive film 307 is TaN and the second conductive film 308 is W. However, there is no particular limitation, and all are Ta, W, Ti, Mo, Al, Cu, Cr, Nd. You may form with the element selected from these, or the alloy material or compound material which has the said element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Moreover, you may use the alloy which consists of Ag, Pd, and Cu. In addition, the first conductive film is formed using a tantalum (Ta) film, the second conductive film is formed using a W film, the first conductive film is formed using a titanium nitride (TiN) film, and the second conductive film is formed. The first conductive film is formed of a tantalum nitride (TaN) film, the second conductive film is formed of an Al film, and the first conductive film is formed of a tantalum nitride (TaN) film. The second conductive film may be a combination of Cu films.
[0072]
Next, as shown in FIG. 3B, resist masks 309 to 313 are formed using a photolithography method, and a first etching process is performed to form electrodes and wirings. The first etching process is performed under the first and second etching conditions. In this embodiment, an ICP (Inductively Coupled Plasma) etching method is used as the first etching condition, and CF is used as an etching gas. _Four And Cl ₂ And O ₂ The gas flow ratio was 25/25/10 (sccm), and 500 W RF (13.56 MHz) power was applied to the coil-type electrode at a pressure of 1 Pa to generate plasma and perform etching. . Here, a dry etching apparatus (Model E645- □ ICP) using ICP manufactured by Matsushita Electric Industrial Co., Ltd. was used. 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The W film is etched under this first etching condition so that the end portion of the first conductive layer is tapered. Under the first etching conditions, the etching rate with respect to W is 200.39 nm / min, the etching rate with respect to TaN is 80.32 nm / min, and the selection ratio of W with respect to TaN is about 2.5. Further, the taper angle of W is about 26 ° under this first etching condition.
[0073]
Thereafter, as shown in FIG. 3B, the masks 309 to 313 made of resist are not removed but the second etching conditions are changed, and the etching gas is changed to CF. _Four And Cl ₂ The gas flow ratio is 30/30 (sccm), and 500 W of RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa to generate plasma and etching for about 30 seconds. Went. 20 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. CF _Four And Cl ₂ Under the second etching condition in which is mixed, the W film and the TaN film are etched to the same extent. The etching rate for W under the second etching conditions is 58.97 nm / min, and the etching rate for TaN is 66.43 nm / min. Note that in order to perform etching without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%.
[0074]
In the first etching process, the shape of the mask made of resist is made suitable, and the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes. The angle of the tapered portion may be 15 to 45 °. Thus, the first shape conductive layers 314 to 318 (first conductive layers 314 a to 318 a and second conductive layers 314 b to 318 b) composed of the first conductive layer and the second conductive layer by the first etching treatment. Form. The width of the first conductive layer in the channel length direction here corresponds to W1 described in the above embodiment. Reference numeral 319 denotes a gate insulating film, and a region not covered with the first shape conductive layers 314 to 318 is etched by about 20 to 50 nm to form a thinned region.
[0075]
Then, a first doping process is performed without removing the resist mask, and an impurity element imparting n-type conductivity is added to the semiconductor layer. (FIG. 3B) The doping process may be performed by an ion doping method or an ion implantation method. The condition of the ion doping method is a dose of 1 × 10 ¹³ ~ 5x10 ¹⁵ atoms / cm ² The acceleration voltage is set to 60 to 100 keV. In this embodiment, the dose is 1.5 × 10 ¹⁵ atoms / cm ² The acceleration voltage was 80 keV. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the conductive layers 314 to 318 serve as a mask for the impurity element imparting n-type, and the high concentration impurity regions 320 to 323 are formed in a self-aligning manner. The high concentration impurity regions 320 to 323 have 1 × 10 ²⁰ ~ 1x10 ^{twenty one} atoms / cm ^Three An impurity element imparting n-type is added in a concentration range of.
[0076]
Next, as shown in FIG. 3C, a second etching process is performed without removing the resist mask. Here, CF is used as an etching gas. _Four And Cl ₂ And O ₂ The gas flow ratio was 25/25/10 (sccm), and 500 W RF (13.56 MHz) power was applied to the coil-type electrode at a pressure of 1 Pa to generate plasma and perform etching. . 20 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. In the second etching process, the etching rate with respect to W is 124.62 nm / min, the etching rate with respect to TaN is 20.67 nm / min, and the selection ratio of W with respect to TaN is 6.05. Therefore, the W film is selectively etched. By this second etching, the taper angle of W became 70 °. Second conductive layers 324b to 327b are formed by the second etching process. On the other hand, the first conductive layers 314a to 318a are hardly etched, and the first conductive layers 324a to 327a are formed.
[0077]
Next, a second doping process is performed. Doping is performed using the second conductive layers 324b to 328b as masks against the impurity element so that the impurity element is added to the semiconductor layer formed below the tapered portion of the first conductive layer. In this embodiment, P (phosphorus) is used as the impurity element, and the dose amount is 3.5 × 10. ¹² atoms / cm ^Three Plasma doping was performed at an acceleration voltage of 90 keV. Thus, low concentration impurity regions 329 to 332 overlapping with the first conductive layer are formed in a self-aligning manner. The concentration of phosphorus (P) added to the low-concentration impurity regions 329 to 332 is 1 × 10 ¹⁷ ~ 1x10 ¹⁸ atoms / cm ^Three And has a gradual concentration gradient according to the film thickness in the tapered portion of the first conductive layer. Note that in the semiconductor layer overlapping the tapered portion of the first conductive layer, the impurity concentration is slightly lower from the end of the tapered portion of the first conductive layer to the inside, but the concentration is almost the same. . The impurity element is also added to the high concentration impurity regions 333 to 336 to form the high concentration impurity regions 333 to 336.
[0078]
Next, as shown in FIG. 4A, a third etching process is performed without removing the resist mask. In the third etching process, the tapered portion of the first conductive layer is partially etched to reduce a region overlapping with the semiconductor layer. The third etching process uses CHF as the etching gas. _Three And using a reactive ion etching method (RIE method). In this embodiment, the chamber pressure is 6.7 Pa, the RF power is 800 W, and CHF. _Three A third etching process was performed at a gas flow rate of 35 sccm. The first conductive layers 341 to 344 are formed by the third etching.
[0079]
At the same time as the third etching process, the insulating film 319 is also etched, and part of the high-concentration impurity regions 333 to 336 is exposed to form insulating films 346a to 346d. In this embodiment, the etching conditions in which part of the high-concentration impurity regions 333 to 336 are exposed are used. However, if the thickness of the insulating film and the etching conditions are changed, a thin insulating film remains in the high-concentration impurity region. It can also be done.
[0080]
By the third etching, impurity regions (LDD regions) 337a to 340a that do not overlap with the first conductive layers 341 to 344 are formed. Note that the impurity regions (GOLD regions) 337 b to 340 b remain overlapped with the first conductive layers 341 to 344.
[0081]
In addition, an electrode formed by the first conductive layer 341 and the second conductive layer 324b serves as a gate electrode of an n-channel TFT of a driver circuit formed in a later step, and the first conductive layer 342 and the second conductive layer 324b The electrode formed with the second conductive layer 325b becomes a gate electrode of a p-channel TFT of a driver circuit formed in a later process. Similarly, an electrode formed using the first conductive layer 343 and the second conductive layer 326b serves as a gate electrode of an n-channel TFT in a pixel portion formed in a later step, and the first conductive layer 344 The electrode formed with the second conductive layer 327b serves as a gate electrode of an n-channel TFT in a pixel portion formed in a later step.
[0082]
Thus, in this embodiment, the impurity concentration in the impurity regions (GOLD regions) 337b to 340b overlapping with the first conductive layers 341 to 344 and the impurity region (LDD region) not overlapping with the first conductive layers 341 to 344 are obtained. ) The difference from the impurity concentration in 337a to 340a can be reduced, and the TFT characteristics can be improved.
[0083]
Next, after removing the resist mask, new resist masks 348 and 349 are formed, and a third doping process is performed. By this third doping treatment, an impurity region 350 in which an impurity element imparting a conductivity type (p-type) opposite to the one conductivity type (n-type) is added to the semiconductor layer that becomes the active layer of the p-channel TFT. ˜355. (FIG. 4B) The first conductive layers 342 and 344 are used as masks against the impurity element, and an impurity element imparting p-type is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 350 to 355 are diborane (B ₂ H ₆ ) Using an ion doping method. In this third doping process, the semiconductor layer forming the n-channel TFT is covered with masks 348 and 349 made of resist. In the first doping process and the second doping process, phosphorus is added to the impurity regions 348 and 349 at different concentrations, respectively, and the concentration of the impurity element imparting p-type in each of the regions is 2 ×. 10 ²⁰ ~ 2x10 ^{twenty one} atoms / cm ^Three By performing the doping treatment so as to become, no problem arises because it functions as the source region and drain region of the p-channel TFT. In this embodiment, since a part of the semiconductor layer that becomes an active layer of the p-channel TFT is exposed by the third etching treatment, an impurity element (boron) is easily added.
[0084]
Through the above steps, impurity regions are formed in the respective semiconductor layers.
[0085]
Next, the resist masks 348 and 349 are removed, and a first interlayer insulating film 356 is formed. The first interlayer insulating film 356 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film having a thickness of 150 nm is formed by a plasma CVD method. Needless to say, the first interlayer insulating film 356 is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.
[0086]
Next, as shown in FIG. 4C, a step of activating the impurity element added to each semiconductor layer is performed. This activation process is performed by a thermal annealing method using a furnace annealing furnace. As the thermal annealing method, it may be performed at 400 to 700 ° C., typically 500 to 550 ° C. in a nitrogen atmosphere having an oxygen concentration of 1 ppm or less, preferably 0.1 ppm or less. The activation treatment was performed by heat treatment. In addition to the thermal annealing method, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied.
[0087]
In this embodiment, at the same time as the activation treatment, nickel used as a catalyst during crystallization is gettered to impurity regions (333, 335, 350, 353) containing high-concentration phosphorus. The nickel concentration in the semiconductor layer that becomes the formation region is reduced. A TFT having a channel formation region manufactured in this manner has a low off-current value and good crystallinity, so that high field-effect mobility can be obtained and good characteristics can be achieved.
[0088]
In addition, an activation process may be performed before forming the first interlayer insulating film. However, when the wiring material used is weak against heat, it is activated after an interlayer insulating film (insulating film containing silicon as a main component, for example, a silicon nitride film) is formed to protect the wiring and the like as in this embodiment. It is preferable to perform the conversion treatment.
[0089]
Furthermore, a heat treatment is performed at 300 to 550 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen to perform a step of hydrogenating the semiconductor layer. In this embodiment, heat treatment was performed at 410 ° C. for 1 hour in a nitrogen atmosphere containing about 3% hydrogen. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the interlayer insulating film. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.
[0090]
In the case where a laser annealing method is used as the activation treatment, it is desirable to irradiate a laser beam such as an excimer laser or a YAG laser after performing the hydrogenation.
[0091]
Next, as shown in FIG. 5A, a second interlayer insulating film 357 made of an organic insulating material is formed over the first interlayer insulating film 356. In this embodiment, an acrylic resin film having a thickness of 1.6 μm is formed. Next, patterning for forming contact holes reaching the impurity regions 333, 335, 350, and 353 is performed.
[0092]
As the second interlayer insulating film 357, a film made of an insulating material containing silicon or an organic resin is used. As the insulating material containing silicon, silicon oxide, silicon nitride, or silicon oxynitride can be used. As the organic resin, polyimide, polyamide, acrylic, BCB (benzocyclobutene), or the like can be used.
[0093]
In this embodiment, a silicon oxynitride film formed by plasma CVD is formed. Note that the thickness of the silicon oxynitride film is preferably 1 to 5 μm (more preferably 2 to 4 μm). A silicon oxynitride film is effective in suppressing deterioration of an EL element because it contains a small amount of moisture. In addition, although dry etching or wet etching can be used for forming the contact hole, it is desirable to use the wet etching method in view of the problem of electrostatic breakdown during etching.
[0094]
Furthermore, since the first interlayer insulating film 356 and the second interlayer insulating film 357 are simultaneously etched in the formation of the contact hole here, the material for forming the second interlayer insulating film 357 is the first material considering the shape of the contact hole. It is preferable to use a material having a higher etching rate than the material for forming the one interlayer insulating film 356.
[0095]
Then, wirings 358 to 365 that are electrically connected to the impurity regions 333, 335, 350, and 353 are formed. A laminated film of a 50 nm-thick Ti film and a 500 nm-thickness alloy film (Al / Ti alloy film) is formed by patterning, but another conductive film may be used.
[0096]
Next, a transparent conductive film is formed thereon with a thickness of 80 to 120 nm and patterned to form an anode 367. In this embodiment, an indium tin oxide (ITO) film or a transparent conductive film in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide is used as the anode.
[0097]
The anode 367 is formed in contact with the drain wiring 365 so as to be electrically connected to the drain region of the current control TFT 404.
[0098]
Next, as shown in FIG. 5B, an insulating film containing silicon (in this embodiment, a silicon oxide film) is formed to a thickness of 500 [nm], and an opening is formed at a position corresponding to the anode 367. Then, a third interlayer insulating film 368 functioning as a bank is formed. When the opening is formed, a tapered sidewall can be easily formed by using a wet etching method. Care must be taken because the deterioration of the EL layer due to the step becomes a significant problem unless the side wall of the opening is sufficiently gentle.
[0099]
In this embodiment, a film made of silicon oxide is used as the third interlayer insulating film 368. However, in some cases, an organic resin film such as polyimide, polyamide, acrylic, or BCB (benzocyclobutene) is used. You can also.
[0100]
Next, using the multi-chamber type film formation apparatus described in FIG. 2, an EL layer 369 is formed by a relief printing method as shown in FIG. 5B, and further, a cathode (MgAg electrode) 370 and a vapor deposition method are used. A protective electrode is formed. At this time, it is preferable to heat-treat the anode 367 prior to the formation of the EL layer 369 and the cathode 370 to completely remove moisture. In this embodiment, an MgAg electrode is used as the cathode of the EL element, but other known materials may be used.
[0101]
Note that the material described in the section of the present invention can be used for the EL layer 369. In this embodiment, the EL layer has a two-layer structure consisting of a hole transporting layer and a light emitting layer, but any of a hole injection layer, an electron injection layer, or an electron transport layer is provided. There is also. As described above, various examples of combinations have already been reported, and any of the configurations may be used.
[0102]
In this embodiment, polytetrahydrothiophenylphenylene, which is a polymer precursor, is formed as a hole transport layer by a printing method, and polyphenylene vinylene is formed by heating. The light-emitting layer is formed by vapor deposition of 30-40% PBD of 1,3,4-oxadiazole derivative in polyvinyl carbazole, and about 1% of coumarin 6 is used as a green emission center. It is added.
[0103]
The protective electrode 371 can also protect the EL layer 369 from moisture and oxygen; however, a passivation film 372 is more preferably provided. In this embodiment, a silicon nitride film having a thickness of 300 nm is provided as the passivation film 372. This passivation film may also be formed continuously after the protective electrode 371 without being released to the atmosphere.
[0104]
The protective electrode 371 is provided to prevent the cathode 370 from being deteriorated, and a metal film mainly composed of aluminum is typically used. Of course, other materials may be used. Further, since the EL layer 369 and the cathode 370 are very sensitive to moisture, it is desirable that the protective electrode 371 is continuously formed without being released to the atmosphere to protect the EL layer from the outside air.
[0105]
Note that the thickness of the EL layer 369 is 10 to 400 [nm] (typically 60 to 150 [nm]), and the thickness of the cathode 370 is 80 to 200 [nm] (typically 100 to 150 [nm]. ]).
[0106]
Thus, an EL module having a structure as shown in FIG. 5B is completed. In the EL module manufacturing process of this embodiment, the source signal line is formed by Ta and W, which are materials forming the gate electrode, and the source and drain electrodes are formed due to the circuit configuration and process. Although the gate signal line is formed of Al which is the wiring material being used, a different material may be used.
[0107]
In addition, a driver circuit 406 including an n-channel TFT 401 and a p-channel TFT 402, and a pixel portion 407 including a switching TFT 403, a current control TFT 404, and a storage capacitor 405 can be formed over the same substrate.
[0108]
The n-channel TFT 401 of the driver circuit 406 includes a channel formation region 372, a low-concentration impurity region 337b (GOLD region) overlapping the first conductive layer 341 that forms part of the gate electrode, and a low-concentration region formed outside the gate electrode. An impurity region 337a (LDD region) and a high concentration impurity region 333 functioning as a source region or a drain region are provided. The p-channel TFT 402 functions as a channel formation region 373, an impurity region 338b overlapping with the first conductive layer 342 which forms part of the gate electrode, an impurity region 338a formed outside the gate electrode, and a source region or a drain region. An impurity region 334 is formed.
[0109]
The switching TFT 403 of the pixel portion 407 includes a channel formation region 374, a low concentration impurity region 339 b (GOLD region) overlapping the first conductive layer 343 that forms the gate electrode, and a low concentration impurity region 339 a formed outside the gate electrode. (LDD region) and a high concentration impurity region 335 functioning as a source region or a drain region. The current control TFT 404 includes a channel formation region 375, a low concentration impurity region 355 (GOLD region) overlapping the first conductive layer 344 that forms the gate electrode, and a low concentration impurity region 354 (LDD region) formed outside the gate electrode. ) And a high concentration impurity region 353 functioning as a source region or a drain region. The storage capacitor 405 is formed so that the first conductive layer 376a and the second conductive layer 376b function as one electrode.
[0110]
Next, a method for completing the EL module created up to FIG. 5B as a light emitting device will be described with reference to FIG.
[0111]
6A is a top view illustrating a state where the EL element is sealed, and FIG. 6B is a cross-sectional view taken along line AA ′ in FIG. 6A. 601 indicated by a dotted line is a source side driver circuit, 602 is a pixel portion, and 603 is a gate side driver circuit. Reference numeral 604 denotes a cover material, reference numeral 605 denotes a first sealing material, reference numeral 606 denotes a second sealing material, and a sealing material 607 is provided on the inner side surrounded by the first sealing material 605.
[0112]
Reference numeral 608 denotes a wiring for transmitting signals input to the source side driver circuit 601 and the gate side driver circuit 603, and receives a video signal and a clock signal from an FPC (flexible printed circuit) 609 serving as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.
[0113]
Next, a cross-sectional structure will be described with reference to FIG. A pixel portion 602 and a gate side driver circuit 603 are formed over the substrate 610. The pixel portion 602 is formed by a plurality of pixels including a current control TFT 611 and an anode 612 electrically connected to the drain thereof. . The gate side driver circuit 603 is formed using a CMOS circuit (see FIG. 5) in which an n-channel TFT 613 and a p-channel TFT 614 are combined.
[0114]
Reference numeral 612 denotes an anode. A bank 615 is formed on both ends of the anode 612, and an EL layer 616 and a cathode 617 of an EL element are formed on the anode 612.
[0115]
The cathode 617 also functions as a wiring common to all pixels, and is electrically connected to the FPC 609 via the connection wiring 608. Further, all elements included in the pixel portion 602 and the gate side driver circuit 603 are covered with a cathode 617 and a passivation film 618.
[0116]
Further, a cover material 604 is bonded to the first seal material 605. Note that a spacer made of a resin film may be provided in order to secure a gap between the cover material 604 and the EL element. A sealing material 607 is filled inside the first sealing material 605. Note that an epoxy-based resin is preferably used as the first sealing material 605 and the sealing material 607. The first sealing material 605 is preferably a material that does not transmit moisture and oxygen as much as possible. Further, a substance having a hygroscopic effect or a substance having an effect of preventing oxidation may be contained in the sealing material 607.
[0117]
The sealing material 607 provided so as to cover the EL element also functions as an adhesive for bonding the cover material 604. In this embodiment, FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, or acrylic can be used as the material of the plastic substrate constituting the cover material 604.
[0118]
In addition, after the cover material 604 is bonded using the sealing material 607, the second sealing material 606 is provided so as to cover the side surface (exposed surface) of the sealing material 607. The second sealing material 606 can use the same material as the first sealing material 605.
[0119]
By encapsulating the EL element in the sealing material 607 with the above structure, the EL element can be completely shut off from the outside, and substances that promote deterioration due to oxidation of the EL layer such as moisture and oxygen enter from the outside. Can be prevented. Therefore, a highly reliable light-emitting device can be obtained.
[0120]
[Example 2]
In the first embodiment, the method from the formation of the EL layer to the sealing of the EL element using a multi-chamber type film formation apparatus is shown. However, in this embodiment, the EL layer is formed using an inline apparatus. A method for performing a series of processes from formation to sealing of the EL element will be described with reference to FIGS.
[0121]
FIG. 7A is a top view of an in-line film formation apparatus, and FIG. 7B is a side view thereof. Reference numeral 701 denotes a loader unit (conveying unit) of the processing substrate. As shown in Embodiment 1, after forming the anode (or cathode) of the EL element, the processing substrate is set in the loader unit 701.
[0122]
The substrate is printed with an EL layer in a printing chamber 702 provided with a relief printing apparatus. As shown in FIG. 7B, the printing chamber 702 includes an ink tank 703, a doctor bar 704, an anilox roll 705, and a printing roll 706. When an EL formation is injected from the ink tank 703, the anilox The roll 705 is provided with an EL formed product, and further applied to the convex portion of the printing roll 706. At this time, the doctor bar 704 is adjusted so that the EL formation injected from the ink tank 703 is uniformly provided on the anilox roll surface.
[0123]
Then, an EL formed product is printed on a portion (film forming unit 709) where the substrate that moves horizontally (in the direction of arrow l) at the same speed as the printing roll 706 and the convex portion of the printing roll 706 are in contact with each other.
[0124]
At this time, the substrate is aligned by a monitor (not shown) provided for alignment.
[0125]
In addition, the printing chamber 702 is in an inert gas or a solvent atmosphere contained in the EL formation, and the printing chamber is in an atmospheric pressure state or a state close thereto (typically, 1-2 atmospheres, preferably (1.1 to 1.5 atmospheres). The pressure adjustment is performed by the pressure adjustment mechanism 707. At this time, by providing the solvent tray 708 with a solvent, the printing chamber can be in a solvent atmosphere.
[0126]
In this embodiment, a hole injection layer, a hole transport layer or a light emitting layer made of a polymer material is formed by a printing method. First, a hole injection layer and a hole transport layer are printed. Here, PEDOT (poly (3,4-ethylene dioxythiophene)) which is a polythiophene derivative and polystyrene sulfonic acid (PSS) which is an acceptor material are dissolved in water to form an aqueous solution. Then, the hole injection layer and the hole transport layer are formed by evaporating moisture in the drying chamber 710. At this time, the substrate is heated at 80 to 150 degrees in the hot plate portion 711.
[0127]
Next, as the light emitting layer, EL formations containing cyanopolyphenylene vinylene for the red light emitting layer, polyphenylene vinylene for the green light emitting layer, and polyphenylene vinylene or polyalkylphenylene for the blue light emitting layer are printed in the printing chamber. Note that the thickness of the light-emitting layer at this time may be 30 to 150 nm (preferably 40 to 100 nm).
[0128]
Then, the substrate on which the EL formation is printed is again placed in the drying chamber 710, and the solvent in the EL formation is vaporized to leave the EL material. Note that the drying chamber 710 is provided with a hot plate portion 711, and a processing substrate is placed on the hot plate portion 711 and processed by heating. In addition, the treatment temperature at this time is preferably 20 to 150 ° C., but may be appropriately adjusted according to the volatility of the solvent.
[0129]
After forming the EL layer composed of the hole injection layer, the hole transport layer, and the light emitting layer as described above, in the vapor deposition chamber 712, a conductive film that becomes the cathode (or anode) of the EL element is formed by a vapor deposition method. Can do. Specifically, a film such as an MgAg film or an Al—Li alloy film (an alloy film made of aluminum and lithium) can be formed as a conductive film that serves as a cathode of the EL element in the film formation portion 713 of the evaporation chamber 712. A material used for vapor deposition is provided in the vapor deposition source 714.
[0130]
Note that the vapor deposition chamber 712 can be used not only for forming an electrode but also for forming a part of an EL layer.
[0131]
As described above, after the EL element is formed, the process of finally sealing the EL element in the sealed space is performed in the sealing chamber 715. This treatment is a treatment for protecting the formed EL element from oxygen and moisture, and means such as mechanical sealing with a sealing material or sealing with a thermosetting resin or an ultraviolet light curable resin is used.
[0132]
In the film forming apparatus shown in FIG. 7, a mechanism (hereinafter referred to as an ultraviolet light irradiation mechanism) 716 for irradiating ultraviolet light is provided inside the sealing chamber 715, and the ultraviolet light irradiation mechanism 716 emits light. The ultraviolet light curable resin on the substrate provided in the film forming unit 717 is cured by ultraviolet light. Further, the inside of the sealing chamber 715 can be decompressed by attaching an exhaust pump. In the case where the sealing step is mechanically performed by robot operation, mixing of oxygen and moisture can be prevented by performing it under reduced pressure. Conversely, the inside of the sealing chamber 715 can be pressurized. In this case, the pressure is increased while purging with high-purity nitrogen gas or rare gas to prevent oxygen or the like from entering from the outside air.
[0133]
After being processed in the sealing chamber 715, the substrate is transferred to the unloader 718. Thus, the processing is completed by the in-line film forming apparatus. In addition, this film-forming apparatus can be isolated for every process chamber, and can be made into the environment according to each process. Further, the inside of the film formation apparatus is preferably kept in an inert gas atmosphere that does not contain moisture so as not to affect the EL element.
[0134]
As described above, by using the film formation apparatus illustrated in FIG. 7, it is not necessary to expose the EL element to the air until the EL element is completely enclosed in a sealed space; thus, a highly reliable light-emitting device can be manufactured. . In addition, a light-emitting device can be manufactured with high throughput by an in-line method.
[0135]
The configuration of the present embodiment can be freely combined with the configuration of the first embodiment.
[0136]
Example 3
In this example, a method of forming a multicolor EL layer by the relief printing method shown in Example 1 will be described. In FIG. 8A, reference numeral 801 denotes a printing roll provided in the printing chamber. A relief printing plate is formed on the surface of the printing roll 801 by etching or the like. In order to form a plurality of light emitting devices on a single substrate, pixel patterns 802 are formed at a plurality of locations on the relief printing plate.
[0137]
Further, when the pixel portion pattern 802 is enlarged, convex portions 803 are formed at positions corresponding to a plurality of pixels. However, in this embodiment, since a plurality of colors are formed by letterpress printing, the convex portion 803 having a different shape for each color is further formed.
[0138]
For example, when an EL formation is printed using the convex portion 803a illustrated in FIG. 8B, a pixel portion of the first color is formed as illustrated in a solid line region in FIG.
Further, when an EL formation different from the first color is printed using the convex portion 803b shown in FIG. 8C, a second color is formed in a pixel portion different from the first color as shown in FIG.
[0139]
Further, when an EL formation different from the first and second colors is printed using the convex portion 803c shown in FIG. 8D, the third color is shown in FIG. 8D in the pixel portion different from the first and second colors. Formed.
[0140]
As described above, it is possible to print three color EL formations on the pixel portion. However, the types of EL formations shown here need not be limited to three colors, and may be two colors or three or more colors.
[0141]
In addition, when performing multicolor printing, a plurality of convex portions are required. This may be provided with a plurality of printing chambers, or after processing all the substrates for each color in one printing chamber. Thus, the multi-color printing may be performed by replacing the convex portion.
[0142]
Here, FIG. 9 shows a multi-chamber film forming apparatus provided with a plurality of printing chambers. In FIG. 9, reference numeral 901 denotes a transfer chamber, and the transfer chamber 901 is provided with a transfer mechanism (A) 902 to transfer the substrate 903. The transfer chamber 901 is in a reduced-pressure atmosphere, and is connected to each processing chamber by a gate. Delivery of the substrate to each processing chamber is performed by the transfer mechanism (A) 902 when the gate is opened.
[0143]
In order to depressurize the transfer chamber 901, an exhaust pump such as an oil rotary pump, a mechanical booster pump, a turbo molecular pump, or a cryopump can be used, but a cryopump effective for removing moisture is preferable.
[0144]
Hereinafter, each processing chamber will be described. Since the transfer chamber 901 has a reduced pressure atmosphere, all the processing chambers directly connected to the transfer chamber 901 are provided with an exhaust pump (not shown). As the exhaust pump, the above-described oil rotary pump, mechanical booster pump, turbo molecular pump, or cryopump is used.
[0145]
First, reference numeral 904 denotes a load chamber for substrate setting (installation), which is also called a load lock chamber. The load chamber 904 is connected to the transfer chamber 901 by a gate 900a, and a carrier (not shown) on which a substrate 903 is set is disposed. Note that the load chamber 904 may be distinguished for substrate loading and substrate unloading. The load chamber 904 includes the above-described exhaust pump and a purge line for introducing high-purity nitrogen gas or rare gas.
[0146]
Next, reference numerals 905, 907, and 909 denote printing chambers for depositing an EL material by a relief printing method, and are called a printing chamber (A), a printing chamber (B), and a printing chamber (C).
[0147]
In this embodiment, in the film forming unit 906 in the printing chamber (A) 905, a hole injection layer and a light emitting layer that develops red as the first color are formed. A known material may be used for the hole injection layer and the light emitting layer that emits red color.
Note that the printing chamber (A) 905 is connected to the transfer chamber 901 through the gate 900b. Further, the printing chamber (A) 905 is nitrogen, an inert gas, or a solvent atmosphere contained in the EL formation, and the printing chamber is in an atmospheric pressure state or a state close thereto (typically 1 to 2 atmospheres). , Preferably 1.1 to 1.5 atmospheres). The pressure adjustment is performed by the pressure adjustment mechanism 919a. Further, when the inside of the printing chamber (A) is in a solvent atmosphere, the solvent tray 920a is provided with a solvent.
[0148]
Next, an EL material for the second color is formed in the film formation portion 908 in the printing chamber (B) 907. The printing chamber (B) 907 is connected to the transfer chamber 901 through a gate 900c. In this embodiment, a hole injection layer and a light emitting layer that emits green color are formed in the film formation portion 908 in the printing chamber (B) 907. A known material may be used for the hole injection layer and the light emitting layer that emits green color.
[0149]
Further, the printing chamber (B) 907 is set to a solvent atmosphere included in nitrogen, an inert gas, or an EL formation, and the printing chamber (B) 907 is in an atmospheric pressure state or a state close thereto (typically 1 to 2 atmospheres, preferably 1.1 to 1.5 atmospheres). The pressure adjustment is performed by the pressure adjustment mechanism 919b. Further, when the inside of the printing chamber (B) 907 is in a solvent atmosphere, the solvent is provided in the solvent tray 920b.
[0150]
Next, an EL material for the third color is deposited in the deposition unit 910 in the printing chamber (C) 909. The printing chamber (C) 909 is connected to the transfer chamber 901 through a gate 900d. In this embodiment, a hole injection layer and a light emitting layer that develops blue color are formed in a film formation portion 910 in the printing chamber (C) 909. Note that a known material may be used for the hole injection layer and the light emitting layer emitting blue color.
[0151]
Further, the printing chamber (C) 909 is set to nitrogen, an inert gas, or a solvent atmosphere contained in the EL formation, and the printing chamber (C) 909 is in an atmospheric pressure state or a state close thereto (typically 1 to 2 atmospheres, preferably 1.1 to 1.5 atmospheres). The pressure adjustment is performed by the pressure adjustment mechanism 919c. In addition, when the inside of the printing chamber (C) 909 is in a solvent atmosphere, the solvent is provided in the solvent tray 920c.
[0152]
Next, reference numeral 911 denotes a vapor deposition chamber for forming a conductive film (a metal film serving as a cathode in this embodiment) that becomes an anode or a cathode of an EL element by a vapor deposition method, and is called a vapor deposition chamber. The deposition chamber 911 is connected to the transfer chamber 901 through the gate 900e. In this embodiment, a vapor deposition chamber having the structure shown in FIG. In this embodiment, an Al—Li alloy film (an alloy film of aluminum and lithium) is formed as a conductive film to be a cathode of the EL element in the film formation portion 912 in the vapor deposition chamber 911. Note that it is possible to co-evaporate an element belonging to Group 1 or Group 2 of the periodic table and aluminum.
[0153]
Next, reference numeral 913 denotes a drying chamber for vaporizing the solvent contained in the EL formation after the EL layer is printed in the printing chamber. The drying chamber 913 is connected to the transfer chamber 901 by the gate 900f. . The drying chamber is provided with a hot plate portion 914 so that it can be heated at 20 to 120 ° C.
[0154]
Next, reference numeral 915 denotes a sealing chamber, which is connected to the load chamber 904 through a gate 900g. The description of the sealing chamber 915 may refer to the first embodiment. Further, an ultraviolet light irradiation mechanism 916 is provided inside the sealing chamber 915 as in the first embodiment. Further, a delivery chamber 917 is connected to the sealing chamber 915. A delivery mechanism (B) 918 is provided in the delivery chamber 917, and the substrate in which the EL element is sealed in the sealing chamber 915 is delivered to the delivery chamber 917. The description of the delivery room 917 may also refer to the first embodiment.
[0155]
As described above, by using the film formation apparatus illustrated in FIG. 9, it is not necessary to expose the EL element until it is completely enclosed in a sealed space, and thus a highly reliable light-emitting device can be manufactured. .
[0156]
The configuration of this embodiment can be freely combined with any of the configurations of Embodiment 1 and Embodiment 2.
[0157]
Example 4
In the first embodiment, the case of the top gate type TFT has been described. However, since the present invention is not limited to the TFT structure, the bottom gate type TFT (typically an inverted stagger type TFT) may be used. I do not care. Further, the reverse stagger type TFT may be formed by any means.
[0158]
Since the inverted stagger type TFT has a structure in which the number of steps can be easily reduced as compared with the top gate type TFT, it is very advantageous for reducing the manufacturing cost which is the subject of the present invention. In addition, the structure of a present Example can be freely combined with any structure of Example 1- Example 3. FIG.
[0159]
Example 5
In driving the light emitting device of the present invention, analog driving using an analog signal as an image signal can be performed, or digital driving using a digital signal can be performed.
[0160]
When analog driving is performed, an analog signal is sent to the source wiring of the switching TFT, and the analog signal including the gradation information becomes the gate voltage of the current control TFT. Then, the current control TFT controls the current flowing in the EL element, and the light emission intensity of the EL element is controlled to perform gradation display. Note that when analog driving is performed, the current control TFT is preferably operated in a saturation region.
[0161]
On the other hand, in the case of performing digital driving, gradation display called time-division driving is performed unlike analog gradation display. That is, the color gradation is visually changed by adjusting the length of the light emission time. In the case of performing digital driving, the current control TFT is preferably operated in a linear region.
[0162]
Since an EL element has a very high response speed compared to a liquid crystal element, it can be driven at a high speed. Therefore, it can be said that the element is suitable for time-division driving in which gradation display is performed by dividing one frame into a plurality of subframes.
[0163]
As described above, since the present invention is a technique related to an element structure, any driving method may be used.
[0164]
Example 6
In Example 1, the case where an EL layer is formed using an organic EL material has been described. However, the present invention is not limited to this, and the present invention can also be implemented using an inorganic EL material. However, since the current inorganic EL material has a very high driving voltage, a TFT having a withstand voltage characteristic that can withstand such a driving voltage must be used when performing analog driving.
[0165]
Furthermore, if an inorganic EL material with a lower driving voltage is developed in the future, it can be applied to the present invention.
[0166]
Moreover, the structure of a present Example can be freely combined with any structure of Examples 1-5.
[0167]
Example 7
Since the light-emitting device of the present invention is a self-luminous type, it has excellent visibility in a bright place as compared with a liquid crystal display, and has a wide viewing angle. Therefore, it can be used as a display unit of various electric appliances. For example, in order to appreciate TV broadcasting or the like on a large screen, the light emitting device of the present invention may be used in a display portion of a display device having a diagonal of 30 inches or more (typically 40 inches or more).
[0168]
The display device includes all information display devices such as a personal computer display device, a TV broadcast receiving display device, and an advertisement display device. In addition, the light-emitting device of the present invention can be used for display portions of various electric appliances.
[0169]
Such an electric appliance of the present invention includes a video camera, a digital camera, a goggle type display device (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game machine, A portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, or the like), an image playback device equipped with a recording medium (specifically, a playback medium such as a digital video disc (DVD)) A device having a display capable of displaying). In particular, since a portable information terminal that is often viewed from an oblique direction emphasizes the wide viewing angle, it is desirable to use a light emitting device for the display portion. Specific examples of these electric appliances are shown in FIGS.
[0170]
FIG. 10A illustrates a display device, which includes a housing 1301, a support base 1302, a display portion 1303, and the like. The light emitting device of the present invention can be used in the display portion 1303. Note that since the light-emitting device of the present invention is a self-luminous type, a backlight is not necessary, and a display portion thinner than a liquid crystal display can be obtained.
[0171]
FIG. 10B illustrates a video camera, which includes a main body 1311, a display portion 1312, an audio input portion 1313, operation switches 1314, a battery 1315, an image receiving portion 1316, and the like. The light emitting device of the present invention can be used in the display portion 1312.
[0172]
FIG. 10C shows a part (right side) of the head mounted display, which includes a main body 1321, a signal cable 1322, a head fixing band 1323, a display portion 1324, an optical system 1325, a display device 1326, and the like. The light-emitting device of the present invention can be used in the display device 1326.
[0173]
FIG. 10D illustrates an image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 1331, a recording medium (DVD or the like) 1332, an operation switch 1333, a display unit (a) 1334, and a display unit. (B) 1335 and the like are included. The display portion (a) 1334 mainly displays image information, and the display portion (b) 1335 mainly displays character information. However, the light emitting device of the present invention displays the display portion (a) 1334 and the display portion (b) 1335. Can be used. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.
[0174]
FIG. 10E illustrates a goggle type display device (head mounted display), which includes a main body 1341, a display portion 1342, and an arm portion 1343. The light emitting device of the present invention can be used in the display portion 1342.
[0175]
FIG. 10F illustrates a personal computer, which includes a main body 1351, a housing 1352, a display portion 1353, a keyboard 1354, and the like. The light emitting device of the present invention can be used in the display portion 1353.
[0176]
If the emission brightness of the EL material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used for a front type or rear type projector.
[0177]
In addition, the electric appliances often display information distributed through electronic communication lines such as the Internet or CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the response speed of the EL material is very high, the light emitting device of the present invention is preferable for displaying moving images.
[0178]
FIG. 11A illustrates a mobile phone, which includes a main body 1401, an audio output unit 1402, an audio input unit 1403, a display unit 1404, an operation switch 1405, and an antenna 1406. The light emitting device of the present invention can be used in the display portion 1404. Note that the display portion 1404 can reduce power consumption of the mobile phone by displaying white characters on a black background.
[0179]
FIG. 11B illustrates a sound reproducing device, specifically an in-vehicle audio system, which includes a main body 1411, a display portion 1412, and operation switches 1413 and 1414. The light emitting device of the present invention can be used in the display portion 1412. Moreover, although the vehicle-mounted audio is shown in the present embodiment, it may be used for a portable or household sound reproducing device. Note that the display unit 1414 can reduce power consumption by displaying white characters on a black background. This is particularly effective in a portable sound reproducing apparatus.
[0180]
FIG. 11C illustrates a digital camera, which includes a main body 1421, a display portion (A) 1422, an eyepiece portion 1423, operation switches 1424, a display portion (B) 1425, and a battery 1426. The light-emitting device of the present invention can be used in the display portion (A) 1422 and the display portion (B) 1425. Further, when the display portion (B) 1425 is mainly used as an operation panel, power consumption can be suppressed by displaying white characters on a black background.
[0181]
Further, in the portable electric appliance shown in this embodiment, as a method for reducing power consumption, a sensor unit for sensing external brightness is provided, and when used in a dark place, a display unit is provided. For example, there is a method of adding a function such as reducing the brightness of the image.
[0182]
As described above, the application range of the present invention is extremely wide and can be used for electric appliances in various fields. Moreover, you may apply any structure shown in Example 1- Example 6 to the electric appliance of a present Example.
[0183]
Example 8
In this embodiment, a pressure adjustment mechanism in the present invention will be described. FIG. 12 shows a pressure adjustment mechanism 1202 connected to the printing chamber 1201. In this embodiment, a processing chamber for forming an EL layer by a printing method is called a printing chamber.
[0184]
The printing chamber 1201 is provided with a printing apparatus 1204 for forming an EL layer on the substrate 1203. The configuration is the same as that described with reference to FIG. The printing chamber 1201 is provided with a solvent tray 1205. The solvent tray 1205 includes toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butylcellosolve, cyclohexane, NMP. A solvent such as (N-methyl-2-pyrrolidone), cyclohexanone, dioxane or THF (tetrahydrofuran) is provided.
[0185]
Since the solvent provided in the solvent tray 1205 is volatilized when the inside of the printing chamber 1201 is pressurized by the pressure adjusting mechanism 1202, the inside of the printing chamber 1201 can be made into a solvent atmosphere. However, the solvent tray 1205 is not necessarily provided, and may be provided as necessary.
[0186]
Next, the pressure adjustment mechanism 1202 in the present embodiment will be described. The pressure adjusting mechanism 1202 includes a cylinder 1206 provided with a gas such as nitrogen, helium or argon, a compressor 1207 for compressing the gas, a sensor 1208 for measuring the pressure inside the printing chamber 1201, An exhaust valve 1209 is provided in a pipe for exhausting the gas inside the printing chamber 1201.
[0187]
The gas compressed by the compressor 1207 is introduced into the printing chamber 1201 (in the direction of arrow a). The sensor 1208 is connected to the exhaust valve 1209 and controls the opening and closing of the exhaust valve 1209 according to the pressure inside the printing chamber 1201. The sensor 1208 has a pressure gauge, and the specification is 0 to 1.3 MPa. Specifically, when the pressure inside the printing chamber 1201 is lower than a desired pressure, the exhaust valve 1209 is closed, and when the pressure is higher than the desired pressure, the exhaust valve 1209 is opened to open the inside of the printing chamber 1201. Is exhausted in the direction of the arrow b to adjust the pressure in the printing chamber 1201.
[0188]
The printing chamber 1201 is made of SUS and has a pressure of 0.8 MPa / cm. ² (Design pressure is 1.5 MPa / cm ² ) Pressure resistance. In order to ensure safety, it is desirable to provide a safety valve, a release valve, and the like. The exhaust valve 1209 has a pressure resistance of 0.9 MPa / cm. ² Use one.
[0189]
As described above, the pressure in the printing chamber 1201 can be adjusted. The configuration of the present invention can be implemented as all the pressure adjustment mechanisms in the first to seventh embodiments.
[0190]
Example 9
In the present embodiment, the case where the pressure adjusting mechanism of the present invention has a configuration different from that shown in the eighth embodiment will be described. In this embodiment, a processing chamber for forming an EL layer by a printing method is called a printing chamber.
[0191]
As shown in FIG. 13A, the pressure adjustment mechanism in the present embodiment heats the printing chamber 1301 by a plurality of heaters 1302 provided outside the printing chamber 1301, and pressurizes the printing chamber. Note that the heater 1302 is connected to a power source 1303, and a variable resistor 1304 is provided between the heater 1302 and the power source 1303. Note that the power applied from the power source to the heater 1302 can be controlled by the variable resistor 1304.
[0192]
The variable resistor 1304 is provided with a first sensor 1305 that measures the pressure in the printing chamber 1301 and controls the variable resistor according to the measured pressure. The power that is generated is controlled. The specification of the pressure gauge provided in the first sensor 1305 is 0 to 1.3 MPa.
[0193]
As described above, by controlling the applied power, the temperature at which the heater 1302 heats the printing chamber 1301 can be controlled, and as a result, the pressure in the printing chamber can be controlled.
[0194]
Further, by providing a solvent tray provided with a solvent in the inside of the printing chamber 1301 as in Example 8, the inside of the printing chamber 1301 is vaporized when the inside of the printing chamber 1301 is heated above the temperature at which the solvent evaporates. It can be filled with a solvent. In addition, as a solvent with which a solvent tray is equipped, you may use the same thing as the solvent contained in EL formation.
[0195]
Further, the shape of the heater 1302 is not limited to the shape shown in the drawing, and the inside of the printing chamber 1301 may be provided to be heated and pressurized.
[0196]
Further, the printing chamber 1301 in this embodiment is provided with a second sensor 1307 that measures the pressure in the printing chamber 1301 and controls the opening and closing of the exhaust valve 1306 in accordance with the pressure in the printing chamber 1301. .
[0197]
The second sensor 1307 is connected to the printing chamber 1301 and the exhaust valve 1306, and measures the pressure in the printing chamber 1301 with a pressure gauge included in the second sensor 1307. In addition, the specification of the pressure gauge here shall be 0-1.3 MPa. When the pressure inside the printing chamber 1301 is lower than the desired pressure, the exhaust valve 1306 is closed, and when the pressure is higher than the desired pressure, the exhaust valve 1306 is opened, so that the gas in the printing chamber 1301 is discharged. The pressure in the printing chamber 1301 is adjusted by exhausting air.
[0198]
The printing chamber 1301 is made of SUS and has a pressure of 0.8 MPa / cm. ² (Design pressure is 1.5 MPa / cm ² ) Pressure resistance. In order to ensure safety, it is desirable to provide a safety valve, a release valve, and the like. The exhaust valve 1306 has a pressure resistance of 0.9 MPa / cm. ² Use one.
[0199]
As described above, the pressure in the processing chamber 1301 can be increased. In addition, the structure of this invention can be implemented as all the pressure control mechanisms in Examples 1-8.
[0200]
【The invention's effect】
According to the present invention, an EL layer can be formed without causing a problem of the volatility of a solvent generated when the EL layer is formed by a printing method. Thereby, the manufacturing cost in manufacturing the light emitting device can be reduced. In addition, by using a light-emitting device that can be manufactured at low cost as a display, it is possible to reduce the manufacturing cost of an electric appliance.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining the principle of a relief printing method.
FIG. 2 is a view showing a multi-chamber film forming apparatus.
FIGS. 3A to 3C illustrate a manufacturing process of an active matrix light-emitting device. FIGS.
4A and 4B illustrate a manufacturing process of an active matrix light-emitting device.
FIGS. 5A and 5B illustrate a manufacturing process of an active matrix light-emitting device. FIGS.
FIG. 6 illustrates a sealing structure of a light emitting device.
FIG. 7 illustrates an in-line film formation apparatus.
FIG. 8 is a diagram illustrating a multicolor printing method.
FIG. 9 illustrates a multi-chamber film formation apparatus.
FIG. 10 is a diagram showing a specific example of an electric appliance.
FIG. 11 is a diagram showing a specific example of an electric appliance.
FIG. 12 is a diagram illustrating a pressure adjustment mechanism.
FIG. 13 is a diagram illustrating a pressure adjustment mechanism.

Claims (17)

  A film formation method, wherein an EL layer is formed by printing in a state where a pressure in a treatment chamber is higher than atmospheric pressure and a solvent atmosphere. In claim 1 ,
The film forming method, wherein the printing is letterpress printing, intaglio printing or screen printing. In claim 1 or claim 2 ,
A film forming method, wherein the processing chamber is heated to a pressure higher than atmospheric pressure by heating the processing chamber with a heater. In any one of Claims 1 thru | or 3 ,
A film forming method characterized in that a pressure in the processing chamber is set to a pressure higher than atmospheric pressure by measuring a pressure in the processing chamber and controlling opening and closing of an exhaust valve in the processing chamber in accordance with the measured pressure.   A film forming method comprising forming an EL layer by printing in a state in which the inside of a processing chamber is heated to a pressure higher than atmospheric pressure by heating the inside of the processing chamber with a heater.   An EL layer is formed by printing in a state where the processing chamber is heated to a pressure higher than atmospheric pressure by heating the processing chamber with a heater, and the printing is letterpress printing, intaglio printing, or screen printing. Film forming method. In claim 5 or claim 6 ,
A film forming method characterized in that a pressure in the processing chamber is set to a pressure higher than atmospheric pressure by measuring a pressure in the processing chamber and controlling opening / closing of an exhaust valve in the processing chamber according to the measured pressure.   An EL layer is formed by printing in a state where the pressure in the processing chamber is higher than atmospheric pressure by measuring the pressure in the processing chamber and controlling the opening and closing of the exhaust valve in the processing chamber according to the measured pressure. A film forming method characterized by the above.   By measuring the pressure in the processing chamber and controlling the opening and closing of the exhaust valve in the processing chamber according to the measured pressure, an EL layer is formed by printing in a state where the pressure in the processing chamber is higher than atmospheric pressure. The film forming method is characterized in that the printing is letterpress printing, intaglio printing or screen printing.   A film forming method, wherein an EL layer is formed by printing in a state in which a processing chamber is heated by a heater to be filled with an inert gas at a pressure higher than atmospheric pressure.   An EL layer is formed by printing in a state in which the processing chamber is heated by a heater and filled with an inert gas at a pressure higher than atmospheric pressure, and the printing is performed by letterpress printing, intaglio printing, or screen printing. A film forming method characterized by printing. In claim 10 or claim 11 ,
A film forming method characterized in that a pressure in the processing chamber is set to a pressure higher than atmospheric pressure by measuring a pressure in the processing chamber and controlling opening / closing of an exhaust valve in the processing chamber according to the measured pressure.   By measuring the pressure in the processing chamber and controlling the opening and closing of the exhaust valve in the processing chamber in accordance with the measured pressure, the processing chamber is filled with an inert gas at a pressure higher than atmospheric pressure. A film forming method comprising forming an EL layer by printing.   By measuring the pressure in the processing chamber and controlling the opening and closing of the exhaust valve in the processing chamber in accordance with the measured pressure, the processing chamber is filled with an inert gas at a pressure higher than atmospheric pressure. An EL layer is formed by printing, and the printing is letterpress printing, intaglio printing, or screen printing. A processing chamber;
A pressure adjusting mechanism for setting the processing chamber to a pressure higher than atmospheric pressure,
The pressure adjusting mechanism includes a heater and a device that measures the pressure in the processing chamber and controls electric power applied to the heater in accordance with the measured pressure.
An apparatus for forming a film by printing in the processing chamber that is under a pressure higher than atmospheric pressure by heating the processing chamber with the heater. A processing chamber;
A pressure adjusting mechanism for setting the processing chamber to a pressure higher than atmospheric pressure;
A solvent tray for containing the solvent, and
The pressure adjusting mechanism includes a heater and a device that measures the pressure in the processing chamber and controls electric power applied to the heater in accordance with the measured pressure.
An apparatus for forming a film by printing in the processing chamber that is under a pressure higher than atmospheric pressure by heating the processing chamber with the heater. In claim 15 or claim 16 ,
The film forming apparatus, wherein the printing is letterpress printing, intaglio printing, or screen printing.

Images