JP4674555B2 - Surface acoustic wave element and communication device - Google Patents

Surface acoustic wave element and communication device Download PDF

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Publication number
JP4674555B2
JP4674555B2 JP2006041980A JP2006041980A JP4674555B2 JP 4674555 B2 JP4674555 B2 JP 4674555B2 JP 2006041980 A JP2006041980 A JP 2006041980A JP 2006041980 A JP2006041980 A JP 2006041980A JP 4674555 B2 JP4674555 B2 JP 4674555B2
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acoustic wave
surface acoustic
filter element
wave filter
longitudinally coupled
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JP2007221623A (en
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祐史 小川
省三 松本
桂一 鈴木
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Miyazaki Epson Corp
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Miyazaki Epson Corp
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Description

本発明は、携帯端末及び各種無線機器等に用いられる弾性表面波素子に関し、特に配線
構成を改良した弾性表面波素子と、それを用いて構成した通信装置に関するものである。 The present invention relates to a surface acoustic wave element used for a mobile terminal, various wireless devices, and the like, and more particularly to a surface acoustic wave element having an improved wiring configuration and a communication apparatus configured using the same.

近年、弾性表面波素子（ＳＡＷ素子）は通信分野で広く利用され、高性能、小型、量産
性等の優れた特徴を有することから、特に携帯電話、ＬＡＮ等に多く用いられている。
例えば、図５は従来の弾性表面波素子の一種である縦結合弾性表面波フィルタの構成を
示す平面図であって、セラミックパッケージ５０の凹陥部に２段縦接続型の１次−３次縦
結合二重モードＳＡＷフィルタ（以下、縦結合弾性表面波フィルタと称す）を収容し、圧
電基板５１上の電極パッドと、セラミックパッケージ５０の段差部に設けたボンディング
パッドと、をボンディングワイヤで接続してフィルタを構成する。
圧電基板５１の主面上に表面波の伝搬方向に沿って、３つのＩＤＴ電極（インターディ
ジタルトランスデューサ）５２、５３、５４を近接配置すると共に、該ＩＤＴ電極５２、
５３、５４の両側にグレーティング反射器（以下、反射器と称す）５５、５６を配設して
第１の縦結合弾性表面波フィルタ素子Ｆ１（フィルタ素子Ｆ１）を形成する。更に、フィ
ルタ素子Ｆ１と平行して、ＩＤＴ電極５７、５８、５９を配置すると共に、これらのＩＤ
Ｔ電極５７、５８、５９の両側に反射器６０、６１を配設して、第２の縦結合弾性表面波
フィルタ素子Ｆ２（フィルタ素子Ｆ２）を併設する。ここで、ＩＤＴ電極５２、５３、５
４及び５７、５８、５９は、それぞれ互いに間挿し合う複数の電極指を有する一対の櫛形
電極より構成されている。 In recent years, surface acoustic wave elements (SAW elements) have been widely used in the communication field, and have been widely used particularly for cellular phones, LANs, and the like because they have excellent characteristics such as high performance, small size, and mass productivity.
For example, FIG. 5 is a plan view showing a configuration of a longitudinally coupled surface acoustic wave filter which is a kind of conventional surface acoustic wave element, and a two-stage longitudinally connected primary-third-order longitudinal longitudinally formed in a recessed portion of the ceramic package 50. A coupled double mode SAW filter (hereinafter referred to as a longitudinally coupled surface acoustic wave filter) is accommodated, and the electrode pad on the piezoelectric substrate 51 and the bonding pad provided on the step portion of the ceramic package 50 are connected by a bonding wire. Configure the filter.
Three IDT electrodes (interdigital transducers) 52, 53, 54 are arranged close to each other along the propagation direction of the surface wave on the main surface of the piezoelectric substrate 51, and the IDT electrodes 52,
Grating reflectors (hereinafter referred to as reflectors) 55 and 56 are disposed on both sides of 53 and 54 to form a first longitudinally coupled surface acoustic wave filter element F1 (filter element F1). Further, IDT electrodes 57, 58, 59 are arranged in parallel with the filter element F1, and these IDs are also arranged.
Reflectors 60 and 61 are disposed on both sides of the T electrodes 57, 58, and 59, and a second longitudinally coupled surface acoustic wave filter element F2 (filter element F2) is also provided. Here, the IDT electrodes 52, 53, 5
Reference numerals 4, 57, 58, and 59 are each composed of a pair of comb electrodes having a plurality of electrode fingers that are interleaved with each other.

更に、ＩＤＴ電極５２、５３、５４に近接して図中上に設けた電極パッド６２、６３、
６４と、セラミックパッケージ５０の図中上部の段差部に設けたボンディングパッド６５
（接地用）、６６（入力用）、６７（接地用）と、をそれぞれボンディングワイヤ６８、
６９、７０を用いて接続する。同様に、ＩＤＴ電極５７、５８、５９に近接して図中下に
設けた電極パッド７１、７２、７３と、セラミックパッケージ５０の図中下部の段差部に
設けたボンディングパッド７４（接地用）、７５（出力用）、７６（接地用）と、をそれ
ぞれボンディングワイヤ７７、７８、７９を用いて接続する。そして、圧電基板５１の中
央部で、フィルタ素子Ｆ１とＦ２との間に設けた接地用の電極パッド８０、８１と、ボン
ディングパッド６５（接地用）、７６（接地用）と、をそれぞれボンディングワイヤ８２
、８３にて接続して、縦結合弾性表面波フィルタを構成する。この構造のフィルタでは８
本のボンディングワイヤが必要となる。 Further, electrode pads 62, 63, provided on the upper side in the drawing in the vicinity of the IDT electrodes 52, 53, 54,
64 and a bonding pad 65 provided on the stepped portion at the top of the ceramic package 50 in the drawing.
(For grounding), 66 (for input), 67 (for grounding), bonding wire 68,
69 and 70 are used for connection. Similarly, electrode pads 71, 72, 73 provided in the lower part of the figure close to the IDT electrodes 57, 58, 59, and bonding pads 74 (for grounding) provided in a step part at the lower part of the ceramic package 50 in the figure, 75 (for output) and 76 (for grounding) are connected using bonding wires 77, 78, and 79, respectively. Then, the electrode pads 80 and 81 for grounding provided between the filter elements F1 and F2 and the bonding pads 65 (for grounding) and 76 (for grounding) are bonded to the bonding wires at the center of the piezoelectric substrate 51, respectively. 82
, 83 to form a longitudinally coupled surface acoustic wave filter. 8 for this type of filter
A book bonding wire is required.

図６は、特許第３４７８２６０号（特許文献１）に開示された縦続接続型ＳＡＷフィル
タの平面図で、図５に示したＳＡＷフィルタの配線構造を改良したものである。縦続接続
する各弾性表面波素子（Ｆ３、Ｆ４）の段間接続部を、並列容量が発生しにくいように構
成したと開示されている。圧電基板１０２の主面上にＩＤＴ電極１０３、１０４、１０５
を近接配置し、これらのＩＤＴ電極の両側に反射器を配設して、縦結合弾性表面波フィル
タ素子Ｆ３（フィルタ素子Ｆ３）を形成する。更に、フィルタ素子Ｆ３と平行して、ＩＤ
Ｔ電極１０６、１０７、１０８を近接配置すると共に、これらの両側に反射器を配設して
、縦結合弾性表面波フィルタ素子Ｆ４（フィルタ素子Ｆ４）を併設する。 FIG. 6 is a plan view of the cascade connection type SAW filter disclosed in Japanese Patent No. 3478260 (Patent Document 1), which is an improvement of the wiring structure of the SAW filter shown in FIG. It is disclosed that the interstage connection portions of the surface acoustic wave elements (F3, F4) that are connected in cascade are configured so that parallel capacitance is unlikely to occur. IDT electrodes 103, 104, 105 on the main surface of the piezoelectric substrate 102
Are arranged close to each other, and reflectors are arranged on both sides of these IDT electrodes to form a longitudinally coupled surface acoustic wave filter element F3 (filter element F3). Furthermore, in parallel with the filter element F3, the ID
The T electrodes 106, 107, and 108 are disposed close to each other, and reflectors are disposed on both sides thereof, and a longitudinally coupled surface acoustic wave filter element F4 (filter element F4) is also provided.

更に、ＩＤＴ電極１０３、１０４、１０５の図中上に、接地用の電極パッド１０９を設
け、該電極パッド１０９と、ＩＤＴ電極１０３、１０４、１０５の図中上のそれぞれのバ
スバーと、を配線接続する。同様に、ＩＤＴ電極１０６、１０７、１０８の図中下に、接
地用の電極パッド１１０を設け、ＩＤＴ電極１０６、１０７、１０８の図中下のそれぞれ
のバスバーと、を配線接続する。そして、ＩＤＴ電極１０３の図中下のバスバーと、ＩＤ
Ｔ電極１０６の図中上のバスバーとを、フィルタ素子Ｆ３とＦ４の間に設けた配線パター
ン１１１で接続する。同様に、ＩＤＴ電極１０５の図中下のバスバーと、ＩＤＴ電極１０
８の図中上のバスバーとを、フィルタ素子Ｆ３とＦ４の間に設けた配線パターン１１２で
接続する。 Further, an electrode pad 109 for grounding is provided on the IDT electrodes 103, 104, and 105, and the electrode pad 109 and each bus bar on the IDT electrodes 103, 104, and 105 are connected by wiring. To do. Similarly, a grounding electrode pad 110 is provided below the IDT electrodes 106, 107, 108 in the drawing, and the bus bars below the IDT electrodes 106, 107, 108 are connected by wiring. The bus bar at the bottom of the IDT electrode 103 and the ID
The upper bus bar of the T electrode 106 in the figure is connected by a wiring pattern 111 provided between the filter elements F3 and F4. Similarly, the lower bus bar of the IDT electrode 105 and the IDT electrode 10
The upper bus bar in FIG. 8 is connected by a wiring pattern 112 provided between the filter elements F3 and F4.

更に、フィルタ素子Ｆ３とＦ４の間に電極パッド１１３、１１４を設け、電極パッド１
１３と、ＩＤＴ電極１０４の図中下のバスバーとを配線接続すると共に、電極パッド１１
４と、ＩＤＴ１０７の図中上のバスバーとを配線接続する。そして、電極パッド１１３と
、パッケージ１００の入力用ボンディングパッド１１５とをボンディングワイヤ１１６で
接続し、電極パッド１１４と、パッケージ１００の出力用ボンディングパッド１１７と、
をボンディングワイヤ１１８で接続する。さらに、電極パッド１０９と、パッケージ１０
０のボンディングパッド１１９（接地用）、１２０（接地用）とをそれぞれボンディング
ワイヤ１２１、１２２で接続し、電極パッド１１０と、パッケージ１００のボンディング
パッド１２３（接地用）、１２４（接地用）と、をそれぞれボンディングワイヤ１２５、
１２６で接続して、フィルタ素子Ｆ３とＦ４とを縦続接続した縦結合弾性表面波フィルタ
を構成する。
以上のように、フィルタ素子Ｆ３とＦ４の間に入出力用の電極パッドを配置することに
より、配線パターンとアース端子用の電極パッドとの距離を物理的に離間することができ
るので、段間接続部における並列容量の発生を効果的に抑圧でき、更にボンディングワイ
ヤ本数を減らすことができると開示されている。 Furthermore, electrode pads 113 and 114 are provided between the filter elements F3 and F4, and the electrode pad 1
13 is connected to the lower bus bar of the IDT electrode 104 in the drawing, and the electrode pad 11
4 and the bus bar in the figure of IDT 107 are connected by wiring. Then, the electrode pad 113 and the input bonding pad 115 of the package 100 are connected by a bonding wire 116, and the electrode pad 114 and the output bonding pad 117 of the package 100 are connected.
Are connected by a bonding wire 118. Furthermore, the electrode pad 109 and the package 10
0 bonding pads 119 (for grounding) and 120 (for grounding) are connected by bonding wires 121 and 122, respectively, and electrode pad 110, bonding pads 123 (for grounding) and 124 (for grounding) of package 100, Bonding wire 125,
The longitudinally coupled surface acoustic wave filter is formed by connecting the filter elements F3 and F4 in cascade.
As described above, by arranging the input / output electrode pads between the filter elements F3 and F4, the distance between the wiring pattern and the electrode pad for the ground terminal can be physically separated, so that the interstage It is disclosed that the generation of parallel capacitance in the connecting portion can be effectively suppressed and the number of bonding wires can be further reduced.

また、入力端子と段間に配置した橋絡容量との配線を、反射器を介して行い、ボンディ
ングワイヤを減らしたＳＡＷフィルタの構成法が特開２００４−２１４８０８公報（特許
文献２）に開示されている。図７は特許文献２に開示されて縦続接続型のＳＡＷフィルタ
の構成を示す概略図であって、圧電基板２００の主面上に表面波の伝搬方向に沿って、Ｉ
ＤＴ電極２０１、２０２を近接配置すると共に、該ＩＤＴ電極２０１、２０２の両側に反
射器２０３、２０４を配設して、１次−２次縦結合二重モードＳＡＷフィルタ素子ｆ１（
フィルタ素子ｆ１）を形成する。更に、フィルタ素子ｆ１と平行して、ＩＤＴ電極２０５
、２０６を近接配置すると共に、これらの両側に反射器２０７、２０８を配設して、１次
−２次縦結合二重モードＳＡＷフィルタｆ２（フィルタ素子ｆ２）を併設する。 Also, JP-A-2004-214808 (Patent Document 2) discloses a configuration method of a SAW filter in which wiring between an input terminal and a bridging capacitor disposed between stages is performed via a reflector and bonding wires are reduced. ing. FIG. 7 is a schematic diagram showing the configuration of a cascade connection type SAW filter disclosed in Patent Document 2, and is formed along the propagation direction of the surface wave on the main surface of the piezoelectric substrate 200.
The DT electrodes 201 and 202 are arranged close to each other, and the reflectors 203 and 204 are disposed on both sides of the IDT electrodes 201 and 202, so that the primary-secondary longitudinally coupled double mode SAW filter element f1 (
A filter element f1) is formed. Further, the IDT electrode 205 is parallel to the filter element f1.
, 206 are disposed close to each other, and reflectors 207 and 208 are disposed on both sides thereof, and a primary-secondary longitudinally coupled double-mode SAW filter f2 (filter element f2) is also provided.

ＩＤＴ電極２０２の図中上のバスバー２０９と、反射器２０４の図中上のバスバー２１
０とを配線パターン２１１で接続する。フィルタ素子ｆ１とｆ２との間の圧電基板２００
の中央部の左右に、電極パッド２１２、２１３を設けると共に、反射器２０４の図中下の
バスバー２１４と、電極パッド２１２とを配線接続し、ＩＤＴ電極２０１の図中下のバス
バーと、ＩＤＴ電極２０６の図中上のバスバーとを配線パターン２１５で接続する。そし
て、電極パッド２１２と配線パターン２１５との間に静電容量用の櫛形電極２１６を、電
極パッド２１３と配線パターン２１５との間に静電容量用の櫛形電極２１７を設ける。こ
のように、フィルタ素子ｆ１とｆ２とを縦続接続することにより、ＩＤＴ電極２０２を入
力、ＩＤＴ２０５を出力とした２段縦続接続型の縦結合弾性表面波フィルタが構成でき、
橋絡容量２１６が形成されると共にボンディングワイヤを減らすことができると開示され
ている。
特許第３４７８２６０号 特開２００４−２１４８０８公報 The bus bar 209 on the IDT electrode 202 in the drawing and the bus bar 21 on the reflector 204 in the drawing.
0 is connected by the wiring pattern 211. Piezoelectric substrate 200 between filter elements f1 and f2
The electrode pads 212 and 213 are provided on the left and right sides of the central portion of the substrate, and the bus bar 214 in the lower part of the reflector 204 and the electrode pad 212 are connected to each other by wiring. The upper bus bar 206 is connected by a wiring pattern 215. A capacitance comb-shaped electrode 216 is provided between the electrode pad 212 and the wiring pattern 215, and a capacitance comb-shaped electrode 217 is provided between the electrode pad 213 and the wiring pattern 215. In this way, by connecting the filter elements f1 and f2 in cascade, a two-stage cascaded longitudinally coupled surface acoustic wave filter having the IDT electrode 202 as an input and the IDT 205 as an output can be configured.
It is disclosed that the bridging capacitance 216 can be formed and bonding wires can be reduced.
Patent No. 3478260 JP 2004-214808 A

しかしながら、図５に示したような従来の配線構造の縦結合弾性表面波フィルタを２５
個製造し、−４０℃で３０分、＋１２５℃で３０分の保持を繰り返すヒートサイクル試験
を行ったところ、１０００サイクルで断線不良が３個発生し、１５００サイクルで新たに
１０個が、２０００サイクルでさらに６個の断線不良が発生し、最近の仕様に要求される
環境試験を満足することが難しいという問題があった。
また、図６に示したような配線構造の縦結合弾性表面波フィルタは、段間接続部におけ
る並列容量は発生しにくく、広帯域のＳＡＷフィルタに適し、ボンディングワイヤの本数
を削減できるものの、圧電基板１０２の両端部に設けた電極パッド１０９、１１０と、パ
ッケージ１００の接地用ボンディングパッド１１９、１２０及び１２３、１２４と、をそ
れぞれ接続するボンディングワイヤ１２１、１２２及び１２５、１２６は、入出力用のボ
ンディングワイヤ１１６、１１８より短くなり、上記のようなヒートサイクル試験を行う
と、短いボンディングワイヤが断線不良を起こすというおそれがあった。 However, a longitudinally coupled surface acoustic wave filter having a conventional wiring structure as shown in FIG.
When a heat cycle test was repeated, which was repeated for 30 minutes at −40 ° C. and 30 minutes at + 125 ° C., 3 disconnection failures occurred in 1000 cycles, and 10 in 2000 cycles were 2000 cycles. As a result, six disconnection failures occurred, and it was difficult to satisfy environmental tests required for recent specifications.
In addition, the longitudinally coupled surface acoustic wave filter having a wiring structure as shown in FIG. 6 is less likely to generate parallel capacitance at the interstage connection portion, and is suitable for a broadband SAW filter, and can reduce the number of bonding wires. Bonding wires 121, 122, 125, and 126 that connect the electrode pads 109 and 110 provided at both ends of the 102 and the grounding bonding pads 119, 120, 123, and 124 of the package 100, respectively, are input / output bondings. When the heat cycle test is performed as described above, the short bonding wire may cause a disconnection failure.

また、図７に示したような構造の縦結合弾性表面波フィルタは、入力用の電極パッドと
橋絡容量とは、反射器を介して接続され、ボンディングワイヤが１本節約されるものの、
接地用の電極パッドが共通化されていないので、ボンディングワイヤの本数は、低減され
ていないという問題があった。
本発明は、ボンディングワイヤの本数を削減すると共に、入出力用ボンディングワイヤ
と、接地用ボンディングワイヤとが、従来の構造の縦結合弾性表面波フィルタより長くな
るように電極パッドを配置し、ヒートサイクル試験、振動衝撃試験に耐えうる構造の弾性
表面波素子を提供することを目的とする。 In the longitudinally coupled surface acoustic wave filter having the structure shown in FIG. 7, the input electrode pad and the bridging capacitor are connected via a reflector, and one bonding wire is saved.
Since the grounding electrode pads are not shared, there is a problem that the number of bonding wires is not reduced.
The present invention reduces the number of bonding wires and arranges electrode pads so that the input / output bonding wires and the grounding bonding wires are longer than the longitudinally coupled surface acoustic wave filter having a conventional structure, and heat cycle An object of the present invention is to provide a surface acoustic wave device having a structure capable of withstanding a test and a vibration shock test.

本発明は、弾性表面波素子に用いるボンディングワイヤの本数を削減すると共に、ボンディングワイヤの長さを長くし、ヒートサイクル試験に耐用できるようにするため、平面視での大きさが３ｍｍ角のパッケージと、
前記パッケージに載置された圧電基板と、
前記圧電基板上に形成され、弾性表面波の伝搬方向に沿って配置された一対の櫛歯電極からなる３つのＩＤＴ電極と、前記３つのＩＤＴ電極の両側に設けられた一対の反射機とで構成された第１の縦結合弾性表面波フィルタ素子と、
前記圧電基板上に、前記第１の縦結合弾性表面波フィルタ素子と平行して形成され、弾性表面波の伝搬方向に沿って配置された一対の櫛歯電極からなる３つのＩＤＴ電極と、前記３つのＩＤＴ電極の両側に設けられた一対の反射機とで構成された第２の縦結合弾性表面波フィルタ素子と、
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と電気的に接続された第１の入出力用電極パッドと、
前記基板上に形成され、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と電気的に接続された第２の入出力用電極パッドと、
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの一方の前記反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記一方の反射機と同じ側に位置する前記反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極とを電気的に接続する第１の接続用配線パターンと、
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの他方の前記反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記他方の反射機と同じ側に位置する前記反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極とを電気的に接続する第２の接続用配線パターンと、
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と電気的に接続された第１の接地用電極パッドと、
前記基板上に形成され、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と電気的に接続された第２の接地用電極パッドと、
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の前記一方の反射機と、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記一方の反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子が有し、前記第１の縦結合弾性表面波フィルタ素子が有する前記一方の反射機と同じ側に位置する前記反射機と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記一方の反射機と同じ側に位置する反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極とを接続する第１の接地用配線パターンと、
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の前記他方の反射機と、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記他方の反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子が有し、前記第１の縦結合弾性表面波フィルタ素子が有する前記他方の反射機と同じ側に位置する前記反射機と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記他方の反射機と同じ側に位置する反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極とを接続する第２の接地用配線パターンと、
前記パッケージに形成され、前記第１の縦結合弾性表面波フィルタ素子側に、前記弾性表面波の伝搬方向に沿って配置された３つの第１のボンディングパッドと、
前記パッケージに形成され、前記第２の縦結合弾性表面波フィルタ素子側に、前記弾性表面波の伝搬方向に沿って配置された３つの第２のボンディングパッドと、
前記３つの第１のボンディングパッドのうちの中央に位置する第１のボンディングパッドと第１の入出力用電極パッド、前記３つの第１のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記一方の反射機側に位置する第１のボンディングパッドと前記第１の接地用電極パッド、前記３つの第１のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記他方の反射機側に位置する第１のボンディングパッドと前記第１の接地用配線パターン、前記３つの第２のボンディングパッドのうちの中央に位置する第２のボンディングパッドと第２の入出力用電極パッド、前記３つの第２のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記他方の反射機側に位置する第２のボンディングパッドと前記第２の接地用電極パッド、および、前記３つの第１のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記一方の反射機側に位置する第２のボンディングパッドと前記第２の接地用配線パターンをそれぞれ電気的に接合する６本のボンディングワイヤと、を有し、
前記第１の入出力用電極パッドおよび前記第２の入出力用電極パッドは、それぞれ、前記ＩＤＴ電極が配置された領域の前記弾性表面波の伝搬方向に直交する方向の領域以外に配置され、
前記第１の接地用電極パッドおよび前記第２の接地用電極パッドは、それぞれ、前記第１の縦結合弾性表面波フィルタ素子と前記第２の縦結合弾性表面波フィルタ素子との間で、かつ、前記第１の接続用配線パターンと前記第２の接続用配線パターンとの間に配置され、
前記第１の接地用配線パターンおよび前記第２の接地用配線パターンは、それぞれ、前記第１の縦結合弾性表面波フィルタ素子と前記第２の縦結合弾性表面波フィルタ素子との間の領域にて、前記ボンディングワイヤと接続されており、
前記ボンディングワイヤの各々のワイヤ径は、３０μｍであり、
前記ボンディングワイヤの各々の長さは、５８０μｍ以上として、弾性表面波素子を構成することを特徴とする。
このように、弾性表面波素子を構成することにより、ボンディングワイヤの本数を低減できると共に、ボンディングワイヤの長さを長くできるので、ヒートサイクル試験に耐用できる弾性表面波フィルタを実現することができる。 The present invention is to reduce the number of bonding wires to be used for surface acoustic wave devices, to increase the length of the bonding wire, in order to be able to service the heat cycle test, the package is the size in the plan view of 3mm square When,
A piezoelectric substrate placed on the package;
Three IDT electrodes formed on the piezoelectric substrate and including a pair of comb electrodes disposed along the propagation direction of the surface acoustic wave, and a pair of reflectors provided on both sides of the three IDT electrodes A first longitudinally coupled surface acoustic wave filter element configured;
Three IDT electrodes comprising a pair of comb electrodes formed on the piezoelectric substrate in parallel with the first longitudinally coupled surface acoustic wave filter element and disposed along the propagation direction of the surface acoustic wave; A second longitudinally coupled surface acoustic wave filter element composed of a pair of reflectors provided on both sides of three IDT electrodes;
The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled surface acoustic wave filter element; A first input / output electrode pad electrically connected to the comb electrode located on the opposite side;
The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element has the first longitudinally coupled surface acoustic wave filter element and A second input / output electrode pad electrically connected to the comb electrode located on the opposite side;
The IDT electrode formed on the substrate and adjacent to the reflector of one of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled elastic surface. The comb electrode disposed on the wave filter element side and the one reflection of the first longitudinally coupled surface acoustic wave filter element among the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element The IDT electrode adjacent to the reflector located on the same side as the machine has a first connection to electrically connect the comb electrode located on the first longitudinally coupled surface acoustic wave filter element side Wiring pattern for
The IDT electrode formed on the substrate and adjacent to the other reflector of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled elastic surface. The other reflection of the comb electrode disposed on the wave filter element side and the first longitudinally coupled surface acoustic wave filter element of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element The IDT electrode adjacent to the reflector located on the same side as the machine has a second connection for electrically connecting the comb electrode located on the first longitudinally coupled surface acoustic wave filter element side Wiring pattern for
The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled surface acoustic wave filter element side A first grounding electrode pad electrically connected to the comb electrode located in
The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element has the first longitudinally coupled surface acoustic wave filter element side A second grounding electrode pad electrically connected to the comb electrode located in
Reflecting one of the reflectors of the first longitudinally coupled surface acoustic wave filter element and the one of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element formed on the substrate. The IDT electrode adjacent to the machine has the comb electrode located on the opposite side of the second longitudinally coupled surface acoustic wave filter element, and the second longitudinally coupled surface acoustic wave filter element, The reflector located on the same side as the one reflector of the first longitudinally coupled surface acoustic wave filter element, and the first of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element. The IDT electrode adjacent to the reflector located on the same side as the one reflector of the one longitudinally coupled surface acoustic wave filter element is located on the opposite side of the first longitudinally coupled surface acoustic wave filter element. The comb electrode and A first ground wiring pattern to be connected,
The other reflector of the first longitudinally coupled surface acoustic wave filter element formed on the substrate and the other of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element. The IDT electrode adjacent to the machine has the comb electrode located on the opposite side of the second longitudinally coupled surface acoustic wave filter element, and the second longitudinally coupled surface acoustic wave filter element, The reflector located on the same side as the other reflector of the first longitudinally coupled surface acoustic wave filter element, and the first of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element. The IDT electrode adjacent to the reflector located on the same side as the other reflector of the one longitudinally coupled surface acoustic wave filter element is located on the opposite side of the first longitudinally coupled surface acoustic wave filter element. The comb electrode and A second ground wiring pattern to be connected,
Three first bonding pads formed in the package and disposed on the first longitudinally coupled surface acoustic wave filter element side along the propagation direction of the surface acoustic wave;
Three second bonding pads formed in the package and disposed on the second longitudinally coupled surface acoustic wave filter element side along the propagation direction of the surface acoustic wave;
The first bonding pad and the first input / output electrode pad located at the center of the three first bonding pads, and the first longitudinally coupled surface acoustic wave of the three first bonding pads. The first longitudinally coupled surface acoustic wave filter element of the first bonding pad, the first grounding electrode pad, and the three first bonding pads located on the one reflector side of the filter element. The first bonding pad located on the other reflector side, the first grounding wiring pattern, the second bonding pad located in the center of the three second bonding pads, and the second input / output Electrode pad, a second bond located on the other reflector side of the first longitudinally coupled surface acoustic wave filter element of the three second bonding pads A second bonding electrode located on the one reflector side of the first longitudinally coupled surface acoustic wave filter element among the three first bonding pads. Six bonding wires for electrically bonding the pads and the second grounding wiring pattern, respectively,
The first input / output electrode pad and the second input / output electrode pad are each disposed in a region other than a region orthogonal to the propagation direction of the surface acoustic wave in a region where the IDT electrode is disposed,
The first ground electrode pad and the second ground electrode pad are respectively disposed between the first longitudinally coupled surface acoustic wave filter element and the second longitudinally coupled surface acoustic wave filter element, and , Disposed between the first connection wiring pattern and the second connection wiring pattern,
The first grounding wiring pattern and the second grounding wiring pattern are respectively located in regions between the first longitudinally coupled surface acoustic wave filter element and the second longitudinally coupled surface acoustic wave filter element. Connected to the bonding wire,
The wire diameter of each of the bonding wires is 30 μm,
Each of the bonding wires has a length of 580 μm or more to form a surface acoustic wave device .
Thus, by configuring the surface acoustic wave element, the number of bonding wires can be reduced and the length of the bonding wires can be increased, so that a surface acoustic wave filter that can withstand heat cycle tests can be realized.

また、前記圧電基板上に、静電容量用の櫛形電極を２つ形成し、
一方の前記櫛形電極は、一方のバスバーを前記第１の接続用配線パターンに、他方のバスバーを前記第１の接地用配線パターンに接続し、
他方の前記櫛歯電極は、一方のバスバーを前記第２の接続用配線パターンに、他方のバスバーを前記第２の接地用配線パターンに接続したことを特徴とする。
このように構成することにより、通過域のリップルが小さい平坦なフィルタ特性を有する弾性表面波素子が得られる。 Moreover, two comb-shaped electrodes for capacitance are formed on the piezoelectric substrate,
One of the comb electrodes has one bus bar connected to the first connection wiring pattern, and the other bus bar connected to the first ground wiring pattern,
The other comb-tooth electrode is characterized in that one bus bar is connected to the second connection wiring pattern and the other bus bar is connected to the second ground wiring pattern.
With this configuration, a surface acoustic wave element having a flat filter characteristic with small ripple in the pass band can be obtained.

上記の弾性表面波素子を備えた通信装置を構成することにより、環境試験に耐用できる
通信装置を製作できると共に、性能の良い通信装置とすることが可能となる。 By configuring a communication device including the above-described surface acoustic wave element, a communication device that can withstand environmental tests can be manufactured, and a communication device with good performance can be obtained.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。図１は本発明に係る弾性
表面波素子の実施の形態の一例を示す平面図であって、セラミックパッケージ１と、圧電
基板２と、該圧電基板２に形成した１次−３次縦結合弾性二重モードＳＡＷフィルタ素子
（以下、縦結合弾性表面波フィルタ素子と称す）と、電極パッド及び配線パターンと、ボ
ンディングワイヤと、図示しない金属蓋と、を備えている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a plan view showing an example of an embodiment of a surface acoustic wave device according to the present invention, in which a ceramic package 1, a piezoelectric substrate 2, and primary-third-order longitudinally coupled elasticity formed on the piezoelectric substrate 2 are shown. A dual mode SAW filter element (hereinafter referred to as a longitudinally coupled surface acoustic wave filter element), an electrode pad and a wiring pattern, a bonding wire, and a metal lid (not shown) are provided.

圧電基板２の主面上に弾性表面波の伝搬方向に沿って３つのＩＤＴ電極３、４、５を近
接配置すると共に、該ＩＤＴ電極３、４、５の両側に反射器６、７を配設して第１の縦結
合弾性表面波フィルタ素子Ｆ１を形成する。縦結合弾性表面波フィルタ素子Ｆ１と平行し
て圧電基板２上に、ＩＤＴ電極８、９、１０を近接配置し、その両側に反射器１１、１２
を配設して、第２の縦結合弾性表面波フィルタ素子Ｆ２を併設する。ＩＤＴ電極３、４、
５及び８、９、１０は、それぞれ互いに間挿し合う複数の電極指を有する一対の櫛形電極
から構成される。 Three IDT electrodes 3, 4, 5 are arranged close to each other along the propagation direction of the surface acoustic wave on the main surface of the piezoelectric substrate 2, and reflectors 6, 7 are arranged on both sides of the IDT electrodes 3, 4, 5. And a first longitudinally coupled surface acoustic wave filter element F1 is formed. The IDT electrodes 8, 9, and 10 are arranged close to each other on the piezoelectric substrate 2 in parallel with the longitudinally coupled surface acoustic wave filter element F1, and the reflectors 11, 12 are arranged on both sides thereof.
And a second longitudinally coupled surface acoustic wave filter element F2 is also provided. IDT electrodes 3, 4,
Reference numerals 5, 8, 9, and 10 each include a pair of comb-shaped electrodes having a plurality of electrode fingers that are inserted into each other.

反射器７の図中上に位置するバスバーの上部領域である右上隅の圧電基板２上に入出力用電極パッド（第１の入出力用電気パッド）１３を設け、該入出力用電極パッド１３とＩＤＴ電極４の図中上のバスバーとを上に屈曲した入出力用配線パターン１４で電気的に接続する。更に、ＩＤＴ電極５の接地用電極を接続した図中上のバスバーと、反射器７の図中上下のバスバーと、ＩＤＴ電極１０の接地用電極を接続した図中下のバスバーと、反射器１２の図中上下のバスバーと、を圧電基板２の図中右端領域に設けた接地用配線パターン（第２の接地用配線パターン）１６で電気的に接続する。そして、ＩＤＴ電極３の接地用電極を接続した図中上のバスバーと、反射器６の図中上下のバスバーと、ＩＤＴ電極８の接地用電極を接続した図中下のバスバーと、反射器１１の図中上下のバスバーと、を圧電基板２の図中左端領域に設けた接地用配線パターン（第１の接地用配線パターン）１５で電気的に接続する。 An input / output electrode pad (first input / output electric pad) 13 is provided on the piezoelectric substrate 2 in the upper right corner, which is the upper area of the bus bar located on the upper side of the reflector 7, and the input / output electrode pad 13 is provided. Are electrically connected to the upper bus bar of the IDT electrode 4 by an input / output wiring pattern 14 bent upward. Further, the upper bus bar in the figure to which the grounding electrode of the IDT electrode 5 is connected, the upper and lower bus bars in the figure of the reflector 7, the lower bus bar in the figure to which the grounding electrode of the IDT electrode 10 is connected, and the reflector 12 The upper and lower bus bars in the figure are electrically connected by a grounding wiring pattern (second grounding wiring pattern) 16 provided in the right end region of the piezoelectric substrate 2 in the figure. The upper bus bar in the figure to which the ground electrode of the IDT electrode 3 is connected, the upper and lower bus bars in the figure of the reflector 6, the lower bus bar in the figure to which the ground electrode of the IDT electrode 8 is connected, and the reflector 11 The upper and lower bus bars in the figure are electrically connected by a grounding wiring pattern (first grounding wiring pattern) 15 provided in the left end region of the piezoelectric substrate 2 in the figure.

さらに、反射器１１の図中下に位置するバスバーの下部領域である左下隅の圧電基板２上に入出力用電極パッド（第２の入出力用電極パッド）１７を設け、該入出力用電極パッド１７とＩＤＴ電極９の図中下のバスバーとを下に屈曲した入出力用配線パターン１８にて電気的に接続する。そして、縦結合弾性表面波フィルタ素子Ｆ１とＦ２との間の中央部領域に接地用電極パッド（第１の接地用電極パッド）１９および接地用電極パッド（第２の接地用電極パッド）２０を設ける。ＩＤＴ電極３の図中下のバスバーと、ＩＤＴ８の図中上のバスバーと、を電気的に接続する接続用配線パターン（第１の接続用配線パターン）２１を設けると共に、ＩＤＴ電極５の図中下のバスバーと、ＩＤＴ１０の図中上のバスバーと、を電気的に接続する接続用配線パターン（第２の接続用配線パターン）２２とを設ける。接地用配線パターン１５と接続用配線パターン２１との間の領域と、接地用配線パターン１６と接続用配線パターン２２との間の領域と、にそれぞれ静電容量用の一対の櫛形電極２３、２４を形成し、櫛形電極２３のそれぞれのバスバーを接地用配線パターン１５と接続用配線パターン２１とに接続し、櫛形電極２４のそれぞれのバスバーを接地用配線パターン１６と接続用配線パターン２２とに接続する。 Further, an input / output electrode pad (second input / output electrode pad) 17 is provided on the piezoelectric substrate 2 in the lower left corner, which is the lower region of the bus bar located in the lower part of the reflector 11, and the input / output electrode is provided. The pad 17 and the bus bar on the lower side of the IDT electrode 9 in the figure are electrically connected by an input / output wiring pattern 18 bent downward. Then, a grounding electrode pad (first grounding electrode pad) 19 and a grounding electrode pad (second grounding electrode pad) 20 are provided in the central region between the longitudinally coupled surface acoustic wave filter elements F1 and F2. Provide. A connection wiring pattern (first connection wiring pattern) 21 is provided to electrically connect the lower bus bar of the IDT electrode 3 in the drawing and the upper bus bar of the IDT 8 in the drawing, and the IDT electrode 5 in the drawing. A connection wiring pattern (second connection wiring pattern) 22 that electrically connects the lower bus bar and the upper bus bar of the IDT 10 in the drawing is provided. A pair of comb-shaped electrodes 23 and 24 for capacitance are respectively provided in a region between the grounding wiring pattern 15 and the connection wiring pattern 21 and a region between the grounding wiring pattern 16 and the connection wiring pattern 22. , Each bus bar of the comb-shaped electrode 23 is connected to the grounding wiring pattern 15 and the connection wiring pattern 21, and each bus bar of the comb-shaped electrode 24 is connected to the grounding wiring pattern 16 and the connection wiring pattern 22. To do.

さらに、セラミックパッケージ１の段差部に設けた第１のボンディングパッド２５（入力用）、２６（接地用）、２７（接地用）と、入出力用電極パッド１３、接地用電極パッド１９、接地用配線パターン１６と、をこの順にボンディングワイヤ２８、２９、３０で接続する。セラミックパッケージ１の段差部に設けた第２のボンディングパッド３１（出力用）、３２（接地用）、３３（接地用）と、入出力用電極パッド１７、接地用配線パターン１５、接地用電極パッド２０と、をこの順にそれぞれボンディングワイヤ３４、３５、３６で接続する。そして、パッケージ１の上面周縁に形成したメタライズ部３７に、図示しない金属蓋を抵抗溶接等で溶接して、縦結合弾性表面波フィルタを構成する。 Further, the first bonding pads 25 (for input), 26 (for grounding), 27 (for grounding) provided on the step portion of the ceramic package 1, the input / output electrode pad 13, the grounding electrode pad 19, and the grounding pad The wiring pattern 16 is connected with bonding wires 28, 29, and 30 in this order. Second bonding pads 31 (for output), 32 (for grounding), 33 (for grounding), input / output electrode pads 17, grounding wiring patterns 15, and grounding electrode pads provided on the stepped portion of the ceramic package 1 20 are connected by bonding wires 34, 35, and 36, respectively, in this order. A longitudinally coupled surface acoustic wave filter is formed by welding a metal lid (not shown) to the metallized portion 37 formed on the periphery of the upper surface of the package 1 by resistance welding or the like.

以上説明したように、本発明の特徴は、入出力用電極パッド１３、１７を入出力ＩＤＴ
電極４、９から離して、圧電基板２の上端の隅と、下端の隅との領域に設ける。つまり、
入出力用電極パッドをＩＤＴ電極が配置された領域の弾性表面波の伝搬方向と直交する方
向の領域以外に配置することにより、入出力用電極パッド１３、１７と、セラミックパッ
ケージ１の入出力用ボンディングパッド２５、３１との長さを長くできると共に、ボンデ
ィングワイヤとＩＤＴ電極との接触の防止、またボンディングツールのＩＤＴ電極への接
触が防げるようになった点である。これらに加え、縦結合弾性表面波フィルタ素子Ｆ１の
反射器６と、縦結合弾性表面波フィルタ素子Ｆ２の反射器１１と、を配線パターン１５で
電気的に接続すると共に、縦結合弾性表面波フィルタ素子Ｆ１の反射器７と、縦結合弾性
表面波フィルタ素子Ｆ２の反射器１２と、を配線パターン１６で電気的に接続し、ＩＤＴ
電極３の接地用電極を接続した上のバスバーと、ＩＤＴ電極８の接地用電極を接続した下
のバスバーとを電極パターン１５に接続し、ＩＤＴ電極５の接地用電極を接続した上のバ
スバーと、ＩＤＴ電極１０の接地用電極を接続した下のバスバーとを配線パターン１６に
接続したことにより、ボンディングワイヤの本数を６本に減らことが出来た点である。こ
のことにより、ボンディングに要する工数を低減し、ボンディングの断線による不良を減
らすことができる。 As described above, the feature of the present invention is that the input / output electrode pads 13 and 17 are connected to the input / output IDT.
Separated from the electrodes 4 and 9, the piezoelectric substrate 2 is provided in a region between the upper corner and the lower corner. That means
The input / output electrode pads 13 and 17 and the input / output electrodes of the ceramic package 1 are arranged by disposing the input / output electrode pads in a region other than the region orthogonal to the propagation direction of the surface acoustic wave in the region where the IDT electrodes are disposed. The lengths of the bonding pads 25 and 31 can be increased, the contact between the bonding wire and the IDT electrode can be prevented, and the contact of the bonding tool with the IDT electrode can be prevented. In addition to these, the reflector 6 of the longitudinally coupled surface acoustic wave filter element F1 and the reflector 11 of the longitudinally coupled surface acoustic wave filter element F2 are electrically connected by a wiring pattern 15, and the longitudinally coupled surface acoustic wave filter is also connected. The reflector 7 of the element F1 and the reflector 12 of the longitudinally coupled surface acoustic wave filter element F2 are electrically connected by the wiring pattern 16, and the IDT
An upper bus bar connected to the ground electrode of the electrode 3 and a lower bus bar connected to the ground electrode of the IDT electrode 8 are connected to the electrode pattern 15 and an upper bus bar connected to the ground electrode of the IDT electrode 5 The number of bonding wires can be reduced to six by connecting the lower bus bar to which the grounding electrode of the IDT electrode 10 is connected to the wiring pattern 16. As a result, the number of man-hours required for bonding can be reduced, and defects due to bonding disconnection can be reduced.

図２は、本発明の縦結合弾性表面波フィルタ２５個に、−４０℃で３０分、＋１２５℃
で３０分のヒートサイクル試験を、５００サイクルから２０００サイクル行った場合のサ
イクル数と発生した不良個数を示した図である。なお、このときの圧電基板は３８．７°
ＬｉＴａＯ3基板を用い、パッケージサイズを３ｍｍ角とし、縦結合弾性表面波フィルタ
の周波数を３００ＭＨｚ帯、ボンディングワイヤ径を３０μｍとしている。下の段は、図
５に示した従来構成の縦結合弾性表面波フィルタ２５個の試験結果を、比較のために示し
ており、圧電基板、パッケージサイズ、周波数、ワイヤ径などは本発明品と同じにしてい
る。本発明の縦結合弾性表面波フィルタでは、接地用のボンディングワイヤ２９、３０、
３５、３６の中で、最も短いボンディングワイヤの長さは、９３０μｍであり、入出力用
のボンディングワイヤ２８、３４の中で短いボンディングワイヤの長さは、５８０μｍで
あった。比較のため、図５に示した従来の構造の縦結合弾性表面波フィルタでは、接地用
のボンディングワイヤの中で、最も短いボンディングワイヤの長さは、５２０μｍであり
、入出力用のボンディングワイヤの中で短いボンディングワイヤの長さは、４７０μｍで
あった。 FIG. 2 shows 25 longitudinally coupled surface acoustic wave filters according to the present invention, 30 minutes at −40 ° C., + 125 ° C.
It is the figure which showed the cycle number at the time of performing the heat cycle test for 30 minutes by 500 cycles to 2000 cycles, and the number of defects which generate | occur | produced. At this time, the piezoelectric substrate is 38.7 °.
A LiTaO 3 substrate is used, the package size is 3 mm square, the frequency of the longitudinally coupled surface acoustic wave filter is 300 MHz, and the bonding wire diameter is 30 μm. The lower row shows the test results of 25 longitudinally coupled surface acoustic wave filters of the conventional configuration shown in FIG. 5 for comparison. The piezoelectric substrate, package size, frequency, wire diameter, etc. are the same as those of the present invention. It is the same. In the longitudinally coupled surface acoustic wave filter of the present invention, the bonding wires 29, 30 for grounding,
The length of the shortest bonding wire among the wires 35 and 36 was 930 μm, and the length of the short bonding wire among the bonding wires 28 and 34 for input / output was 580 μm. For comparison, in the longitudinally coupled surface acoustic wave filter having the conventional structure shown in FIG. 5, the length of the shortest bonding wire among the grounding bonding wires is 520 μm. Among them, the length of the short bonding wire was 470 μm.

以上のように、ボンディングワイヤを長くした本発明の縦結合弾性表面波フィルタでは
、１０００サイクル、１５００サイクルでは不良は発生せず、２０００サイクルで２個の
断線不良が生じたのみである。従来構造の縦結合弾性表面波フィルタにおいては、ヒート
サイクル試験による不良は、いずれも長さが最も短いボンディングワイヤの接続部が断線
していた。この結果より、ボンディングワイヤを少なくとも５８０μｍ以上長くすること
により、ヒートサイクル試験による伸縮の影響を緩和でき、断線不良が減少されることが
分かった。更に、本発明では、接地用の電極パッドを共通化したことにより、従来のボン
ディングワイヤの本数８本から６本に減らすことができ、工数の低減にも寄与している。 As described above, in the longitudinally coupled surface acoustic wave filter of the present invention in which the bonding wire is lengthened, no defect occurs at 1000 cycles and 1500 cycles, and only two disconnection failures occur at 2000 cycles. In the longitudinally coupled surface acoustic wave filter having a conventional structure, the bonding wire connecting portion having the shortest length is broken as a result of the heat cycle test. From this result, it was found that by extending the bonding wire by at least 580 μm or more, the influence of expansion and contraction by the heat cycle test can be alleviated and the disconnection failure is reduced. Furthermore, in the present invention, since the electrode pads for grounding are made common, the number of conventional bonding wires can be reduced from eight to six, which contributes to the reduction of man-hours.

また、セラミックパッケージ１のボンディングパッド２５、２６、２７（３１、３２、
３３）の配列方向と、縦結合弾性表面波フィルタ素子Ｆ１、Ｆ２のそれぞれのＩＤＴ電極
の配列方向と、をほぼ同一方向としたことで、従来の縦結合弾性表面波フィルタの構造に
比べて、ボンディングワイヤの長さを長くすることができた。 Further, the bonding pads 25, 26, 27 (31, 32,
33) and the arrangement direction of the IDT electrodes of the longitudinally coupled surface acoustic wave filter elements F1 and F2 are substantially the same direction, compared with the structure of the conventional longitudinally coupled surface acoustic wave filter, The length of the bonding wire could be increased.

図１に示すセラミックパッケージ１のボンディングパッド２６、３３の中、少なくとも
１個のボンディングパッドを、入出力用のボンディングパッドとし、該ボンディングパッ
ドに、電極パッド１９、２０の中、少なくとも１つとボンディングワイヤにて接続するこ
とにより、入出力端子の少なくと一方は平衡型端子とすることができる。 Among the bonding pads 26 and 33 of the ceramic package 1 shown in FIG. 1, at least one bonding pad is used as an input / output bonding pad, and at least one of the electrode pads 19 and 20 and a bonding wire are used as the bonding pad. By connecting at least one of the input / output terminals can be a balanced terminal.

図３は本発明の他の実施例を示すものであり、図面の符号は図１と同じものを用いてい
る。本実施例の特徴は、接地用配線パターン１５を反射器６、１１と一体化しない点であ
り、同様に接地用配線パターン１６は反射器７、１２と一体に形成していない。このよう
に接地用配線パターンと反射器とを一体化しなくても本発明の目的は達せられる。 FIG. 3 shows another embodiment of the present invention, and the same reference numerals as those in FIG. 1 are used. The feature of this embodiment is that the grounding wiring pattern 15 is not integrated with the reflectors 6 and 11. Similarly, the grounding wiring pattern 16 is not integrally formed with the reflectors 7 and 12. Thus, the object of the present invention can be achieved without integrating the grounding wiring pattern and the reflector.

図４は、本発明の通信装置のブロック図であって、アンテナ（ＡＮＴ）と、ＡＮＴに接
続されたデュプレクサ（ＤＵＰ）と、ＤＵＰに接続されたアンプ１（ＡＮＰ１）及びアン
プ２（ＡＮＰ２）と、ＡＮＰ１に接続された受信部と、ＡＮＰ２に接続された送信部と、
シンセサイザー（ＳＹＮＴＨ、Ｘ、ＴＬ）とから構成される。受信部はバンドパスフィル
タ（ＢＰＦ）４０と、ミキサ１（ＭＩＸ１）と、バンドパスフィルタ（ＢＰＦ2）４２と
、ミキサ２（ＭＩＸ２）と、ＩＦアンプ（ＩＦ ＡＭＰ）と、復調器（ＤＥＭ）とからな
る。送信部は音声アンプ（ＡＦ ＡＭＰ）と、変調器（ＭＯＤ）と、ミキサ３（ＭＩＸ３
）と、アンプ（ＡＭＰ）と、バンドパスフィルタ（ＢＰＦ）４１とからなる。本発明の縦
結合弾性表面波フィルタは、図３（ｂ）に示す受信部のＢＰＦ４０、ＢＰＦ2４２と、送
信部のＢＰＦ４１に適用することにより、通信装置の性能、例えば信頼性、耐環境性等を
向上させることができる。 FIG. 4 is a block diagram of a communication apparatus according to the present invention, which includes an antenna (ANT), a duplexer (DUP) connected to the ANT, an amplifier 1 (ANP1) and an amplifier 2 (ANP2) connected to the DUP. , A receiving unit connected to ANP1, a transmitting unit connected to ANP2,
It is composed of synthesizers (SYNTH, X, TL). A receiver band-pass filter (BPF) 40, a mixer 1 (MIX1), and a bandpass filter (BPF 2) 42, a mixer 2 (MIX2), and IF amplifier (IF AMP), a demodulator (DEM) Consists of. The transmission unit includes an audio amplifier (AF AMP), a modulator (MOD), and a mixer 3 (MIX3
), An amplifier (AMP), and a band-pass filter (BPF) 41. The longitudinally coupled surface acoustic wave filter of the present invention is applied to the BPF 40 and BPF 2 42 of the receiving unit and the BPF 41 of the transmitting unit shown in FIG. Etc. can be improved.

以上、例を挙げて述べてきたが、本発明はパッケージ端子と弾性表面波素子上のパッド
を接続するワイヤ長を延長することにより耐環境性を向上させることを主たる効果として
おり、弾性表面波素子の機能、構成に制限はないことは明らかである。従って、本特許技
術は例示された構成にのみ適用されるものではなく、パッケージに載置される弾性表面波
素子が導電性ワイヤを用いてパッケージ端子と電気的接続を取る弾性表面波素子全般に適
用可能であることは言うまでもない。即ち、弾性表面波共振子、遅延線、フィルタ、及び
フィルタ素子を複数用いる弾性表面波デュプレクサ等に適用できるのは勿論のこと、フィ
ルタ構成として共振子結合型（縦、横）、ラダー型及びトランスバーサル型等にも適用で
きることは明らかである。また、反射器を用いない弾性表面波素子においても本発明を適
用できるのは言うまでもない。 As described above, examples have been described. However, the present invention mainly has the effect of improving the environmental resistance by extending the wire length connecting the package terminal and the pad on the surface acoustic wave element. It is clear that there are no restrictions on the function and configuration of the element. Therefore, the present patent technique is not applied only to the exemplified configuration, and the surface acoustic wave element mounted on the package is generally applied to the surface acoustic wave element that is electrically connected to the package terminal using the conductive wire. Needless to say, it is applicable. That is, the present invention can be applied to a surface acoustic wave duplexer using a plurality of surface acoustic wave resonators, delay lines, filters, and filter elements, as well as a resonator coupling type (vertical, horizontal), ladder type, and transformer as filter configurations. It is clear that it can be applied to the Versal type. Needless to say, the present invention can also be applied to a surface acoustic wave element that does not use a reflector.

本発明に係る縦結合弾性表面波フィルタの構成を示した図。The figure which showed the structure of the longitudinal coupling surface acoustic wave filter which concerns on this invention. 本発明の縦結合弾性表面波フィルタのヒートサイクル試験結果を示した図。The figure which showed the heat cycle test result of the longitudinally coupled surface acoustic wave filter of the present invention. 本発明の別の実施例に係る縦結合弾性表面波フィルタの構成を示した図。The figure which showed the structure of the longitudinal coupling surface acoustic wave filter which concerns on another Example of this invention. 本発明の通信装置の構成を示すブロック図。The block diagram which shows the structure of the communication apparatus of this invention. 従来の縦結合弾性表面波フィルタの構造を示した図。The figure which showed the structure of the conventional longitudinal coupling surface acoustic wave filter. 従来の他の縦結合弾性表面波フィルタの構造を示した図。The figure which showed the structure of the other conventional longitudinally coupled surface acoustic wave filter. 従来の他の縦結合弾性表面波フィルタの構造を示した図。The figure which showed the structure of the other conventional longitudinally coupled surface acoustic wave filter.

符号の説明Explanation of symbols

１ パッケージ、２ 圧電基板、３、４、５、８、９、１０ ＩＤＴ電極、６、７、１
１、１２ グレーティング反射器、１３、１７ 入力用電極パッド、１９、２０ 接地用
電極パッド、１４、１８ 入力用配線パターン、１５、１６ 接地用配線パターン、２１
、２２ 接続用配線パターン、２３、２４ 容量用櫛形電極、２５、２６、２７、３１、
３２、３３ ボンディングパッド、２８、２９、３０、３４、３５、３６ ボンディング
ワイヤ、３７ メタライズ部、Ｆ１、Ｆ２ 縦結合弾性表面波フィルタ素子、ＡＮＴ ア
ンテナ、ＤＵＰ デュプレクサ、ＡＭＰ、ＡＭＰ１、ＡＭＰ２ アンプ、ＳＹＮＴＨ シ
ンセサイザー、４０、４１、４２ バンドパスフィルタ、ＭＩＸ１、ＭＩＸ２、ＭＩＸ３
ミキサ、ＩＦ ＡＭＰ ＩＦアンプ、ＤＥＭ 復調器、ＡＦ ＡＭＰ 音声アンプ、Ｍ
ＯＤ 変調器 1 package, 2 piezoelectric substrate, 3, 4, 5, 8, 9, 10 IDT electrode, 6, 7, 1
1, 12 Grating reflector, 13, 17 Input electrode pad, 19, 20 Ground electrode pad, 14, 18 Input wiring pattern, 15, 16 Ground wiring pattern, 21
, 22 Connection wiring pattern, 23, 24 Capacitor comb electrode, 25, 26, 27, 31,
32, 33 Bonding pad, 28, 29, 30, 34, 35, 36 Bonding wire, 37 Metallized part, F1, F2 Longitudinal surface acoustic wave filter element, ANT antenna, DUP duplexer, AMP, AMP1, AMP2 amplifier, SYNTH synthesizer , 40, 41, 42 Bandpass filter, MIX1, MIX2, MIX3
Mixer, IF AMP IF amplifier, DEM demodulator, AF AMP audio amplifier, M
OD modulator

Claims (3)

平面視での大きさが３ｍｍ角のパッケージと、  A 3 mm square package in plan view;
前記パッケージに載置された圧電基板と、  A piezoelectric substrate placed on the package;
前記圧電基板上に形成され、弾性表面波の伝搬方向に沿って配置された一対の櫛歯電極からなる３つのＩＤＴ電極と、前記３つのＩＤＴ電極の両側に設けられた一対の反射機とで構成された第１の縦結合弾性表面波フィルタ素子と、  Three IDT electrodes formed on the piezoelectric substrate and including a pair of comb electrodes disposed along the propagation direction of the surface acoustic wave, and a pair of reflectors provided on both sides of the three IDT electrodes A first longitudinally coupled surface acoustic wave filter element configured;
前記圧電基板上に、前記第１の縦結合弾性表面波フィルタ素子と平行して形成され、弾性表面波の伝搬方向に沿って配置された一対の櫛歯電極からなる３つのＩＤＴ電極と、前記３つのＩＤＴ電極の両側に設けられた一対の反射機とで構成された第２の縦結合弾性表面波フィルタ素子と、  Three IDT electrodes comprising a pair of comb electrodes formed on the piezoelectric substrate in parallel with the first longitudinally coupled surface acoustic wave filter element and disposed along the propagation direction of the surface acoustic wave; A second longitudinally coupled surface acoustic wave filter element composed of a pair of reflectors provided on both sides of three IDT electrodes;
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と電気的に接続された第１の入出力用電極パッドと、  The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled surface acoustic wave filter element; A first input / output electrode pad electrically connected to the comb electrode located on the opposite side;
前記基板上に形成され、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と電気的に接続された第２の入出力用電極パッドと、  The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element has the first longitudinally coupled surface acoustic wave filter element and A second input / output electrode pad electrically connected to the comb electrode located on the opposite side;
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの一方の前記反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記一方の反射機と同じ側に位置する前記反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極とを電気的に接続する第１の接続用配線パターンと、  The IDT electrode formed on the substrate and adjacent to the reflector of one of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled elastic surface. The comb electrode disposed on the wave filter element side and the one reflection of the first longitudinally coupled surface acoustic wave filter element among the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element The IDT electrode adjacent to the reflector located on the same side as the machine has a first connection to electrically connect the comb electrode located on the first longitudinally coupled surface acoustic wave filter element side Wiring pattern for
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの他方の前記反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記他方の反射機と同じ側に位置する前記反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極とを電気的に接続する第２の接続用配線パターンと、  The IDT electrode formed on the substrate and adjacent to the other reflector of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled elastic surface. The other reflection of the comb electrode disposed on the wave filter element side and the first longitudinally coupled surface acoustic wave filter element of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element The IDT electrode adjacent to the reflector located on the same side as the machine has a second connection for electrically connecting the comb electrode located on the first longitudinally coupled surface acoustic wave filter element side Wiring pattern for
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と電気的に接続された第１の接地用電極パッドと、  The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element has the second longitudinally coupled surface acoustic wave filter element side A first grounding electrode pad electrically connected to the comb electrode located in
前記基板上に形成され、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの中央に位置する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子側に位置する前記櫛歯電極と電気的に接続された第２の接地用電極パッドと、  The IDT electrode formed on the substrate and positioned at the center of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element has the first longitudinally coupled surface acoustic wave filter element side A second grounding electrode pad electrically connected to the comb electrode located in
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の前記一方の反射機と、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記一方の反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子が有し、前記第１の縦結合弾性表面波フィルタ素子が有する前記一方の反射機と同じ側に位置する前記反射機と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記一方の反射機と同じ側に位置する反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極とを接続する第１の接地用配線パターンと、  Reflecting one of the reflectors of the first longitudinally coupled surface acoustic wave filter element and the one of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element formed on the substrate. The IDT electrode adjacent to the machine has the comb electrode located on the opposite side of the second longitudinally coupled surface acoustic wave filter element, and the second longitudinally coupled surface acoustic wave filter element, The reflector located on the same side as the one reflector of the first longitudinally coupled surface acoustic wave filter element, and the first of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element. The IDT electrode adjacent to the reflector located on the same side as the one reflector of the one longitudinally coupled surface acoustic wave filter element is located on the opposite side of the first longitudinally coupled surface acoustic wave filter element. The comb electrode and A first ground wiring pattern to be connected,
前記基板上に形成され、前記第１の縦結合弾性表面波フィルタ素子の前記他方の反射機と、前記第１の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記他方の反射機と隣接する前記ＩＤＴ電極が有し、前記第２の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極と、前記第２の縦結合弾性表面波フィルタ素子が有し、前記第１の縦結合弾性表面波フィルタ素子が有する前記他方の反射機と同じ側に位置する前記反射機と、前記第２の縦結合弾性表面波フィルタ素子の３つの前記ＩＤＴ電極のうちの前記第１の縦結合弾性表面波フィルタ素子が有する前記他方の反射機と同じ側に位置する反射機と隣接する前記ＩＤＴ電極が有し、前記第１の縦結合弾性表面波フィルタ素子と反対側に位置する前記櫛歯電極とを接続する第２の接地用配線パターンと、  The other reflector of the first longitudinally coupled surface acoustic wave filter element formed on the substrate and the other of the three IDT electrodes of the first longitudinally coupled surface acoustic wave filter element. The IDT electrode adjacent to the machine has the comb electrode located on the opposite side of the second longitudinally coupled surface acoustic wave filter element, and the second longitudinally coupled surface acoustic wave filter element, The reflector located on the same side as the other reflector of the first longitudinally coupled surface acoustic wave filter element, and the first of the three IDT electrodes of the second longitudinally coupled surface acoustic wave filter element. The IDT electrode adjacent to the reflector located on the same side as the other reflector of the one longitudinally coupled surface acoustic wave filter element is located on the opposite side of the first longitudinally coupled surface acoustic wave filter element. The comb electrode and A second ground wiring pattern to be connected,
前記パッケージに形成され、前記第１の縦結合弾性表面波フィルタ素子側に、前記弾性表面波の伝搬方向に沿って配置された３つの第１のボンディングパッドと、  Three first bonding pads formed in the package and disposed on the first longitudinally coupled surface acoustic wave filter element side along the propagation direction of the surface acoustic wave;
前記パッケージに形成され、前記第２の縦結合弾性表面波フィルタ素子側に、前記弾性表面波の伝搬方向に沿って配置された３つの第２のボンディングパッドと、  Three second bonding pads formed in the package and disposed on the second longitudinally coupled surface acoustic wave filter element side along the propagation direction of the surface acoustic wave;
前記３つの第１のボンディングパッドのうちの中央に位置する第１のボンディングパッドと第１の入出力用電極パッド、前記３つの第１のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記一方の反射機側に位置する第１のボンディングパッドと前記第１の接地用電極パッド、前記３つの第１のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記他方の反射機側に位置する第１のボンディングパッドと前記第１の接地用配線パターン、前記３つの第２のボンディングパッドのうちの中央に位置する第２のボンディングパッドと第２の入出力用電極パッド、前記３つの第２のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記他方の反射機側に位置する第２のボンディングパッドと前記第２の接地用電極パッド、および、前記３つの第１のボンディングパッドのうちの前記第１の縦結合弾性表面波フィルタ素子の前記一方の反射機側に位置する第２のボンディングパッドと前記第２の接地用配線パターンをそれぞれ電気的に接合する６本のボンディングワイヤと、を有し、  The first bonding pad and the first input / output electrode pad located at the center of the three first bonding pads, and the first longitudinally coupled surface acoustic wave of the three first bonding pads. The first longitudinally coupled surface acoustic wave filter element of the first bonding pad, the first grounding electrode pad, and the three first bonding pads located on the one reflector side of the filter element. The first bonding pad located on the other reflector side, the first grounding wiring pattern, the second bonding pad located in the center of the three second bonding pads, and the second input / output Electrode pad, a second bond located on the other reflector side of the first longitudinally coupled surface acoustic wave filter element of the three second bonding pads A second bonding electrode located on the one reflector side of the first longitudinally coupled surface acoustic wave filter element among the three first bonding pads. Six bonding wires for electrically bonding the pads and the second grounding wiring pattern, respectively,
前記第１の入出力用電極パッドおよび前記第２の入出力用電極パッドは、それぞれ、前記ＩＤＴ電極が配置された領域の前記弾性表面波の伝搬方向に直交する方向の領域以外に配置され、  The first input / output electrode pad and the second input / output electrode pad are each disposed in a region other than a region orthogonal to the propagation direction of the surface acoustic wave in a region where the IDT electrode is disposed,
前記第１の接地用電極パッドおよび前記第２の接地用電極パッドは、それぞれ、前記第１の縦結合弾性表面波フィルタ素子と前記第２の縦結合弾性表面波フィルタ素子との間で、かつ、前記第１の接続用配線パターンと前記第２の接続用配線パターンとの間に配置され、  The first ground electrode pad and the second ground electrode pad are respectively disposed between the first longitudinally coupled surface acoustic wave filter element and the second longitudinally coupled surface acoustic wave filter element, and , Disposed between the first connection wiring pattern and the second connection wiring pattern,
前記第１の接地用配線パターンおよび前記第２の接地用配線パターンは、それぞれ、前記第１の縦結合弾性表面波フィルタ素子と前記第２の縦結合弾性表面波フィルタ素子との間の領域にて、前記ボンディングワイヤと接続されており、  The first grounding wiring pattern and the second grounding wiring pattern are respectively located in regions between the first longitudinally coupled surface acoustic wave filter element and the second longitudinally coupled surface acoustic wave filter element. Connected to the bonding wire,
前記ボンディングワイヤの各々のワイヤ径は、３０μｍであり、  The wire diameter of each of the bonding wires is 30 μm,
前記ボンディングワイヤの各々の長さは、５８０μｍ以上であることを特徴とする弾性表面波素子。  The surface acoustic wave device according to claim 1, wherein each of the bonding wires has a length of 580 μm or more. 前記圧電基板上に、静電容量用の櫛形電極を２つ形成し、  Two comb-shaped electrodes for capacitance are formed on the piezoelectric substrate,
一方の前記櫛形電極は、一方のバスバーを前記第１の接続用配線パターンに、他方のバスバーを前記第１の接地用配線パターンに接続し、  One of the comb electrodes has one bus bar connected to the first connection wiring pattern, and the other bus bar connected to the first ground wiring pattern,
他方の前記櫛歯電極は、一方のバスバーを前記第２の接続用配線パターンに、他方のバスバーを前記第２の接地用配線パターンに接続したことを特徴とする請求項１に記載の弾性表面波素子。  2. The elastic surface according to claim 1, wherein the other comb-tooth electrode has one bus bar connected to the second connection wiring pattern and the other bus bar connected to the second ground wiring pattern. Wave element. 請求項１または２に記載の弾性表面波素子を備えていることを特徴とする通信装置。 A communication apparatus comprising the surface acoustic wave element according to claim 1 .
JP2006041980A 2006-02-20 2006-02-20 Surface acoustic wave element and communication device Expired - Fee Related JP4674555B2 (en)

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JP2004214808A (en) * 2002-12-27 2004-07-29 Kyocera Kinseki Corp Elastic surface wave filter
JP2006042398A (en) * 2002-10-18 2006-02-09 Fujitsu Media Device Kk Multi-mode surface acoustic wave filter and demultiplexer

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JP2001313305A (en) * 2000-02-25 2001-11-09 Murata Mfg Co Ltd Electronic component element, electronic component device, and communications equipment device
JP2003528523A (en) * 2000-03-21 2003-09-24 エプコス アクチエンゲゼルシャフト Dual-mode surface wave filter with improved symmetry and increased stop attenuation
JP2001323305A (en) * 2000-05-16 2001-11-22 Nkk Corp Method for charging center coke in bell-less blast furnace
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