JP4621713B2 - Active matrix display device - Google Patents

Description

The present invention relates to an active matrix display equipment.

  An active matrix display device that is currently widely used uses a highly heat-resistant substrate such as a non-alkali glass substrate as an element formation substrate in an element formation process of an active element, and uses this highly heat-resistant substrate as it is. It is used as a support substrate.

  For example, in the case of forming a thin film transistor using a polycrystalline silicon layer as a semiconductor layer for forming a channel region, in consideration of the processing temperature at the time of forming each functional film, etc. Become.

  First, a barrier layer is formed on an element formation substrate made of non-alkali glass so that a trace component of glass does not elute, and an amorphous silicon layer is formed thereon. In order to polycrystallize the amorphous silicon layer, local short-time heating using an excimer laser is performed to crystallize by solid phase or liquid phase growth, and then the shape of the polycrystalline silicon layer is processed. Then, after depositing a thin film to be a gate insulating film thereon, a metal film for forming a gate electrode and a gate wiring is formed and processed. Further, in order to form source / drain regions in the polycrystalline silicon layer, ion implantation is performed by using an ion doping method with the gate electrode as a mask, and then heat treatment for activation is performed. As a result, a channel region and source / drain regions are formed in the polycrystalline silicon layer. Then, after forming an interlayer insulating film to take the interlayer between the signal line and the gate line, contact holes to the source / drain regions are formed, and after forming the metal film, the source / drain electrodes are formed. Thin film transistors and wirings are formed by performing shape processing. When an active matrix liquid crystal display device or the like is formed, the element formation substrate on which these active elements are formed becomes a support substrate as it is.

  On the other hand, Patent Document 1 discloses the use of a plastic substrate as a substrate for a display device. A light and soft substrate such as a plastic substrate is preferable as a support substrate for a display device such as a portable information terminal. However, due to its low heat resistance and poor dimensional stability, it is difficult to directly use it as a support substrate as an element formation substrate for an active element made of polycrystalline polysilicon having excellent switching characteristics. For this reason, an attempt has been made to form an active element on an element formation substrate such as glass having excellent high-temperature process resistance, and then transfer the active element to a soft support substrate that can be bent, such as a plastic substrate. For example, an active element is formed on an element forming substrate made of glass, and the side on which the active element is formed is adhered to and supported by an intermediate substrate, and then the element forming substrate is removed by etching or the like to finally support the active element. This is a method of transferring to a substrate.

  However, after forming an active element or its wiring structure on an element forming substrate with excellent heat resistance, for example, in a process of transferring them to a plastic substrate, a method of removing the element forming substrate used when forming the active element The problem remains.

  For example, when the element formation substrate is completely removed when the active element is formed, it is difficult to etch the element formation substrate so as not to damage the active element formed on the element formation substrate. Cost.

In addition, if the element formation substrate is not completely removed when forming the active element, the thin element formation substrate remains on the support substrate of the display device, and the flexibility of the display device as a whole is lowered and bent. Will not be possible, and reliability will be reduced.
Japanese Patent Laid-Open No. 7-43696

  As described above, the active matrix element is conventionally damaged in the process of transferring the active matrix element and its wiring structure to a light and soft plastic substrate after forming the active matrix element and its wiring structure on the element forming substrate having excellent heat resistance. Therefore, it has been difficult to obtain a display device with high reliability and high flexibility as the entire device.

The present invention is also the case of using a glass substrate in the element forming substrate is reliable, provides a flexible active matrix display equipment as a whole unit.

The present invention includes a plastic substrate, provided via the contact adhesive layer on a plastic substrate, the adhesive layer in contact with the surface to a thickness of 5μm or more with an irregular shape, 100 [mu] m below the thin glass layer, a thin glass layer An active element provided for each pixel, a display unit provided on the thin glass layer and driven by the active element and capable of displaying for each pixel, and a counter substrate provided on the display unit, and comprising at least a thin glass layer An active matrix display device is provided in which the thickness of a region corresponding to an active element is larger than the thicknesses of other regions.

As described above in detail, according to the present invention, the high reliability when the glass substrate in the element forming substrate, it is possible to provide a flexible active matrix display equipment as a whole unit.

The present invention, after forming an active element using a glass substrate as the element forming substrate, the glass substrate is thinned and then adhered to the soft support substrate capable of bending the plastic substrate through the contact adhesive layer Means for improving the flexibility and strength of the entire display device are provided to the active matrix display device having the structure.

For example, the mechanical properties of a glass substrate (thin glass layer) thinned to about several tens of μm do not deviate from the physical properties of the glass. The softness and bending resistance are governed by the griff theory that develops due to cracks existing on the surface, etc., and the ideal surface state where there are no cracks on the surface is bending due to the presence of cracks. Physical properties such as strength will be reduced to about 1/10 or less.

Therefore, the flexibility and reliability of the entire device can be improved by introducing a structure that prevents the development of cracks existing on the surface of the thin glass layer into the active matrix display device. In the present invention, the following means are used as means for preventing the development of cracks present on the surface of the adhesive layer of the thin glass layer.

  First, the surface of the thin glass layer bonded to the plastic substrate is formed into a wavy shape having gentle irregularities that are at least 1/50 and 1/2 of the thickness of the thin glass layer. In this method, the glass substrate is first physically polished, and then the cracks existing on the glass substrate surface are chemically polished to change the shape of the crack tip from a sharp shape to a curved shape. Further, by making the entire bonding surface of the thin glass layer formed by polishing the glass substrate into a wavy shape, it is possible to prevent the concentration of tensile stress on the cracks.

Second, the thin glass layer is formed with an uneven shape on the surface of the thin glass layer in contact with the adhesive layer so that the region corresponding to the active element is thick and the other region is thin. This is because when an active element is formed on a glass substrate, the region where the active element is formed has a relatively large residual stress and a low strength, so that the region is thickened to have strength.

  Third, a compressive stress is applied to the surface of the thin glass layer on the side bonded to the plastic substrate. In general, a glass crack develops when a tensile stress is applied to the crack tip. Further, the surface of the glass substrate is usually processed so as to apply a compressive stress in order to prevent the development of cracks. However, since the thin glass layer is formed by polishing the element formation substrate, a region to which a tensile stress is applied inside the glass is exposed, and cracks tend to progress. Therefore, if compressive stress is applied to the polished surface of the thin glass layer in the initial state, even when the entire active matrix display device is bent so that tensile stress is applied to the polished surface of the thin glass layer, It becomes possible to prevent the development of cracks. As a method of applying compressive stress, a material having a larger linear expansion coefficient than glass is used, a compressive stress applying layer is formed on the polished surface of the thin glass layer, and this is cooled to be within the surface of the thin glass layer. A compressive stress is applied.

  Fourthly, the surface of the thin glass layer on the side bonded to the plastic substrate is provided with a hydroxyl intrusion prevention layer that blocks invasion of molecules having hydroxyl groups represented by moisture. It is known that a hydroxyl group promotes the crack progress for the crack progress of glass. In addition, since the thin glass layer of the active matrix display device of the present invention is formed by polishing the element formation substrate and the pre-applied compressive stress is lost, the layer that prevents crack propagation is referred to as a thin glass layer. By providing it between the adhesive layers, it becomes possible to prevent the thin glass from progressing.

  Embodiments of the present invention will be described below in detail with reference to the drawings, but the present invention is not limited to these embodiments.

(First embodiment)
A first embodiment of the present invention will be described. 1A and 1B are diagrams showing an active matrix display device of this embodiment, where FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA ′. 2 to 6 are cross-sectional views showing a process of forming an active element of the active matrix display device of the present embodiment, and FIGS. 7 to 10 are cross-sectional views showing a transfer process of the active matrix display device of the present embodiment. FIG. 1A shows 2 × 2 elements in the display device, FIG. 1B and FIGS. 7 to 10 show two elements, and FIGS. 2 to 6 show only one element. Actually, many of these elements are arranged in a two-dimensional array.

  In this embodiment, an active element is formed using a glass substrate as an element formation substrate, the element formation substrate is physically polished, and then chemically polished to form a thin film, thereby reducing the thickness to 1/50 or more. An active matrix display device is formed by using a thin glass layer having an unevenness of 1/2 or less. That is, the strength is improved by changing the shape of the tip of the crack generated on the surface of the thin glass layer by physical polishing from a sharp shape to a shape having curvature.

  As shown in FIG. 1, the active matrix display device of this embodiment is provided on a plastic substrate 101, a thin glass layer 103 provided on the plastic substrate 101 via an adhesive layer 102, and a thin glass layer 103. The undercoat layer 104, a thin film transistor (active element) 105 provided for each pixel on the undercoat layer 104, and a liquid crystal layer (display unit) that is provided on the thin glass layer 103 and is driven by the thin film transistor 105 and can be displayed for each pixel. 106, and a counter substrate 108 in which a counter electrode 107 is formed over the liquid crystal layer 106. The surface of the thin glass layer 103 on the side facing the plastic substrate 101 has unevenness of 1/50 to 1/2 of the thickness.

  The active element includes an active layer 110 provided in an island shape, a gate insulating film 111 provided on the entire surface thereof, a gate electrode 112 provided in a region corresponding to the active layer 110 on the gate insulating film 111, An interlayer insulating film 113 provided on the entire surface, and a source / drain electrode 114 connected to the active layer 110 through a contact hole opened in the gate insulating film 111 and the interlayer insulating film 113 are provided. One of the source / drain electrodes 114 is connected to the pixel electrode 115.

  Next, a method for manufacturing an active element of the active matrix display device of the present embodiment will be described with reference to FIGS.

  First, as shown in FIG. 2, a plasma-excited metal organic chemical vapor deposition method (PEMOCVD method) using trimethylaluminum or the like as a raw material is used on a sufficiently cleaned non-alkali glass substrate (element forming substrate) 201. Then, the undercoat layer 104 is deposited using a silicon oxide film, a silicon nitride film, or the like. The undercoat layer 104 can prevent a slight amount of alkaline component from being eluted from the glass substrate 201.

  An active layer 110 is formed. After an amorphous silicon film is grown using a PECVD method or the like, it is irradiated with an excimer laser using KrF or the like to instantaneously melt and crystallize to be polycrystallized. Then, element isolation of the polycrystalline silicon layer is performed by an anisotropic etching method using a reactive ion etching method (RIE method) using a fluorine-based gas, and the active layer 110 is formed.

  As shown in FIG. 3, a gate insulating film 111 is formed so as to cover the active layer 110 with a silicon oxide film or a silicon nitride film by using a plasma enhanced chemical vapor deposition method (PECVD method) or the like.

  Next, the gate electrode 112 is formed. A metal film such as Mo, W, Ta, or an alloy thereof is deposited on the gate insulating film 111 using a sputtering method or the like. By applying a photoresist on this metal film and forming a resist pattern using a photolithography method, for example, by using a method of impregnating with a solvent and selectively removing a portion of the metal film without the resist pattern Then, the gate electrode 112 is processed into a shape corresponding to the active layer 110, and the gate line group 202 is processed into a predetermined shape.

As shown in FIG. 4, impurities are introduced in order to form a bonding surface in a region of the active layer 110 that contacts a source / drain electrode described later. In this embodiment, phosphorus (P) is used as an impurity. At this time, as shown by an arrow in FIG. 4, the gate electrode 112 is used as a mask so that the ion concentration is about 10 ²² cm ⁻³ by ion doping, and the introduced P is activated. Heat treatment is performed.

  As shown in FIG. 5, a silicon oxide film or a silicon nitride film to be the interlayer insulating film 113 is formed so as to cover the gate electrode 112 and the gate line group 202 by an atmospheric pressure chemical vapor deposition method (APCVD method). Thereafter, through-hole formation for making contact between the source / drain electrodes and the active layer 110 through the interlayer insulating film 113 and the gate insulating film 111 is performed using a photoetching process.

  As shown in FIG. 6, a metal such as Mo, Ta, W, Al, Ni, or an alloy thereof, a laminated film, or the like is connected on the interlayer insulating film 113 so as to be connected to the active layer 110 through a through hole. After deposition using a sputtering method or the like, the source / drain electrodes 114 and the signal line group 203 are formed using a photo-etching process in the same manner as when forming the gate electrodes. One of the source / drain electrodes 114 is connected to the pixel electrode 115.

  In this series of thin film transistors and wiring formation processes, for example, a thermal process of 500 ° C. or more exists, but in this embodiment, the element formation substrate is widely used when manufacturing amorphous thin film transistors and polycrystalline silicon thin film transistors. Since a non-alkali glass substrate is used, it can be produced without problems. Further, a conventional manufacturing method can be adopted when manufacturing a polycrystalline silicon thin film transistor.

  Next, a method for manufacturing the active matrix display device of the present embodiment after forming active elements will be described with reference to FIGS. The details of the thin film transistor are omitted in FIGS.

  As shown in FIG. 7, the surface of the glass substrate 201 on which the thin film transistor 105 is formed is coated with an adhesive having excellent hydrofluoric acid resistance, whose adhesive strength is weakened when irradiated with ultraviolet light, without gaps. An intermediate substrate 205 made of a fluorine-based resin sheet having excellent hydrofluoric acid resistance, which is coated to improve adhesion to an organic material at a position facing the glass substrate 201 with the temporary attachment layer 204 interposed therebetween. Place.

  As shown in FIG. 8, the glass substrate 201 is thinly polished by physically polishing it from the surface side of the glass substrate 201 using a polishing agent and adjusting the roughness of the polishing agent to a thickness of about 0.1 mm. Layer 103 is assumed.

  As shown in FIG. 9, after physical polishing, the whole is impregnated with a hydrofluoric acid solvent and chemically polished to dissolve the thin glass layer 103 to a thickness of about 30 μm. At this time, after the thin glass layer 103 becomes thin, it is desirable to adjust the etching rate by using, for example, a hydrofluoric acid-based solution to which ammonium or the like is added.

  The unevenness of the thin glass layer is preferably about 1/50 to 1/2 of the thickness of the thin glass layer. If the size of the unevenness is less than 1/50, it becomes almost the same as the mirror surface, and the effect of stress relaxation cannot be expected. On the other hand, if the size of the unevenness is larger than half, the internal stress of the glass is concentrated on the concave portion. In particular, by setting the size of the unevenness of the thin glass layer to 1/20 or less, the contact area between the thin glass layer and the adhesive layer is widened, and it is possible to obtain good adhesive properties. .

The thickness of the thin glass layer is preferably about 5 μm or more in order to maintain strength, and is preferably about 100 μm or less in order to maintain lightness and the like. In order to make the unevenness of the thin glass layer about 1/50 to 1/2 of the thickness of the thin glass layer, the particle size of an abrasive such as a grindstone ( (Roughness) is preferably about the same as the size of the unevenness to be formed. For example, when the thickness of the thin glass layer is about 50 μm and the unevenness of about 1/10 of the thickness is formed, the expected unevenness is formed by using a grindstone having a particle diameter of about 5 μm. I can do it.

  As shown in FIG. 10, after sufficiently washing, an adhesive layer 102 is formed on the entire surface of the thin glass layer 103 using an adhesive having excellent adhesion. A polyether amide resin (PES) film having a thickness of about 0.1 mm is adhered as a plastic substrate 101 to the opposite side of the adhesive layer 102 using a vacuum laminating technique.

  Thereafter, ultraviolet light is irradiated from the intermediate substrate 205 side to perform a process of weakening the adhesion of the temporary attachment layer 204. Then, the intermediate substrate 205 is slowly peeled off to expose the surface of the thin film transistor 105 such as the interlayer insulating film 113. At this time, since the remaining component of the temporary attachment layer 204 is generated, this is removed using an organic cleaning method such as isopnopanol to expose the cleaning surface. In this embodiment, the interlayer insulating film 113 is exposed. However, the present invention is not limited to this. A protective layer for protecting the thin film transistor 105 or the like may be provided between the thin film transistor 105 and the temporary attachment layer 204. Good. By providing the protective layer, the room for selection of the material of the temporary attachment layer 204 and the like is expanded.

  Thereafter, a cell is formed by combining the completed active matrix substrate and the counter substrate 108 on which the counter electrode 107 is formed, and a liquid crystal is injected to form a liquid crystal layer 106, which is then sealed. Complete the display device.

  The polishing process of the glass substrate in the manufacturing method of the active matrix display device of this embodiment will be described in detail.

  In the present embodiment, the physical polishing process and the chemical polishing process are used in combination in the glass substrate polishing process. FIG. 11 schematically shows the thin glass layer after the physical polishing step, and FIG. 12 schematically shows the thin glass layer after the chemical polishing step after the physical polishing step. In the figure, the lower side is a polished surface. As shown in FIG. 11, the polished surface of the thin glass layer 103 after the physical polishing step has many acute cracks 301 formed by the abrasive used for the physical polishing. Normally, when polishing glass, in order to improve the flatness of the polished surface, for example, finer abrasives such as # 500 to # 1000 and # 3000 are used for finishing. However, performing physical polishing by taking a lot of time for polishing a thin glass layer reduces productivity. In addition, it is difficult to confirm the state of cracks and scratches on the back surface on which the thin film transistor is formed. For example, it is easy to leave scratches that form cracks that reduce the strength of the glass. Therefore, in the present embodiment, by performing chemical polishing in the state shown in FIG. 11, the thickness of the thin glass layer 103 without a sharp tip is 5 minutes as shown in FIG. A wave-like structure having the unevenness 302 of about 1 or more and half or less can be formed. In the present embodiment, a thin glass layer having high strength can be formed without taking much time for physical polishing.

  Here, FIGS. 13 to 15 are schematic views when the glass substrate is physically polished to form a thin glass layer with cracks remaining. In the figure, the lower side is the polished surface of the thin glass layer.

At this time, for example, when a crack 301 generated due to a scratch remaining at the time of polishing the thin glass layer or a scratch due to a subsequent manufacturing process exists as shown in FIG. 13, the strength of the thin glass layer 103 is reduced by the crack 301. Is concerned.

  When the entire display device (not shown) including the thin glass layer 103 is bent in the direction indicated by the solid line arrow in FIG. 14, a compressive stress is applied to the polishing surface of the thin glass layer 103, and the reverse of the polishing surface. A tensile stress is applied to the surface. And since the compressive stress of a broken-line arrow direction is applied to the crack 301, the progress of the crack 301 is not seen.

  However, when the entire display device (not shown) including the thin glass layer 103 is bent in the direction indicated by the solid line arrow in FIG. 15, tensile stress is applied to the polished surface of the thin glass layer 103, and the polished surface A compressive stress is applied to the opposite surface. And the tensile stress of a broken-line arrow direction will concentrate on the crack 31 front-end | tip part. This is because the polished surface of the thin glass layer is excellent in flatness and the number of cracks is small. It will cause damage.

  On the other hand, when the wavy structure on the polished surface of the thin glass layer according to the present embodiment is employed, the entire display device including the thin glass layer has a curvature due to sufficient chemical polishing, regardless of which direction is bent. Since it has a concave structure, there is no sharp crack in the tip shape, so there is a low possibility that a crack or the like will occur.

  Moreover, the convex part and the concave part of the polishing surface each work in the direction of relaxing the stress in the opposite direction.

That is, as shown in FIG. 16, when the entire display device (not shown) is bent in the direction indicated by the solid line arrow so that tensile stress acts on the entire polished surface having the unevenness of the thin glass layer 103, the projection is pulled to the convex portion. Stress is applied by compressive stress to the recess. As shown in FIG. 17, when the entire display device (not shown) is bent in the direction of the solid line arrow so that the compressive stress acts on the entire polished surface having the unevenness of the thin glass layer, the compressive stress is applied to the convex portion. However, tensile stress is applied to the recess. Accordingly, the stress can be relaxed as a whole.

  Furthermore, as schematically shown in FIG. 18, even if the thin glass layer 103 is subjected to a physical polishing process and a chemical polishing process so as to have an uneven shape, a crack 301 due to scratches during manufacturing or the like may occur. The stress concentrated on the tip of the crack 301 is limited to one unevenness (range indicated by an arrow). Therefore, the stress is greatly reduced as compared with the conventional example, and the breaking strength of the thin glass layer 103 is greatly increased.

  In this embodiment, the PES film is used as the plastic substrate. However, the present invention is not limited to this, and other plastic substrates can be used. For example, a polyethylene terephthalate resin film (PET) having a thickness of about 0.1 mm may be used. Polyethylene resins such as polyethylene naphthalate resin (PEN), polycarbonate (PC), cycloolefin polymer, acrylic resin, liquid crystal polymer, inorganic It can also be formed from reinforced plastic, polyimide, etc. mixed with materials. The plastic substrate may be a film instead of a plate.

(Reference form)
Next, a reference embodiment of the present invention will be described. FIG. 19 is a cross-sectional view showing an active matrix display device according to this embodiment . 20 to 23 are cross-sectional views showing a method for manufacturing the active matrix display device of this embodiment . Note that FIG. 19 shows two elements, and FIGS. 20 to 23 show only one element, but in reality, many of these elements are arranged in a two-dimensional array. For this reference embodiment , only the differences from the first embodiment will be described, and the same parts will be omitted.

  In this embodiment, an active matrix element is formed using a glass substrate as an element formation substrate, and the element formation substrate is thinned to form a thin glass layer. In this case, at least a region of the thin glass layer corresponding to the active element The active matrix display device is formed by increasing the thickness and reducing the thickness of other regions. In an active matrix substrate in which active elements are formed on an element formation substrate, for example, when a thin film transistor is used as an active element, a multilayer thin film is deposited on the thin film transistor portion. Therefore, it is considered that a large stress is applied locally in the region where the thin-film transistor of the thin glass layer is formed, compared with the most region where there are no structures such as elements and wirings. For this reason, from the viewpoint of mechanical properties such as strength reinforcement, it is desirable for the thin film transistor portion and the wiring portion to have a thin glass layer that is thicker than the other portions. In order to maintain the chemical stability of the active layer of the thin film transistor portion, it is desirable that the thin glass layer serving as a block layer for moisture is relatively thick.

  As shown in FIG. 19, the active matrix display device of this embodiment is substantially the same as the active matrix display device of the first embodiment, but the thin glass layer has irregularities as in the first embodiment. The thin glass layer 401 in the region corresponding to the thin film transistor 105 and the wiring is not thick, and the thin glass layer 402 in the other region is thin, which is different from the first embodiment.

  Next, a method for manufacturing the active matrix display device of this embodiment will be described with reference to FIGS. Since the manufacturing method of the active element may be performed in the same manner as in the first embodiment, the description is omitted.

  As shown in FIG. 20, a positive resist 403 made of, for example, a novolac resin is uniformly applied to a thickness of about 5 μm on the back surface of the glass substrate 201 on which the thin film transistor 105 is formed. Then, exposure is performed from the side of the glass substrate 201 where the thin film transistor 105 is formed with a light amount that allows the positive resist 403 to be patterned.

  As shown in FIG. 21, by using a thin film transistor 105, wiring, etc. (not shown) as a mask, a pattern is formed by leaving only the resist 403 in a portion shielded from light by these. At this time, the baking temperature of the resist 403 may be a relatively low temperature of about 100 ° C. so long as it is dissolved or peeled off when impregnated with a hydrofluoric acid solution.

  As shown in FIG. 22, the surface of the glass substrate 201 on which the resist pattern 403 is not formed is surface-coated with an adhesive having excellent hydrofluoric acid resistance, whose adhesive strength is weakened when irradiated with ultraviolet light, without any gaps. And an intermediate layer made of a fluorine-based resin sheet having excellent hydrofluoric acid resistance and the like, which is coated on the adhesive surface side to improve the adhesion to the organic material at a position facing the glass substrate 201 with the temporary attachment layer 204 interposed therebetween. A substrate 205 is placed. Then, the whole is impregnated with a hydrofluoric acid solvent, and the glass substrate 201 is dissolved to a thickness of about 30 μm to form a thin glass layer 103. Here, after the glass substrate 201 is thinned, it is desirable to use a hydrofluoric acid-based solution to which, for example, ammonium or the like is added and the etching rate is adjusted. At this time, the patterned resist 403 does not have sufficient hydrofluoric acid resistance, and therefore, when immersed in a hydrofluoric acid solvent, the resist 403 is peeled off after a while. As a result, in the thin glass layer 103, the thin glass layer 401 in the region corresponding to the thin film transistor 105 is as thick as about 50 μm, and the thin glass layer 402 in the other region is as thin as about 25 μm.

  As shown in FIG. 23, after sufficient cleaning, an adhesive layer 102 is formed on the entire surface of the etched surface of the thin glass layer 103 using an adhesive having excellent adhesion. A polyether amide resin (PES) film having a thickness of about 0.1 mm is adhered as a plastic substrate 101 to the opposite side of the adhesive layer 102 using a vacuum laminating technique.

  Thereafter, the active matrix display device of this embodiment is completed in the same manner as in the first embodiment.

  In this embodiment, for the portion protected by the resist, when the glass substrate is etched, the start of the etching is delayed due to the presence of the resist, and this corresponds to the thin film transistor element portion and the wiring structure portion protected by the resist. A thin glass layer having a thick region can be formed in a self-aligning manner. Moreover, since the convex part and the concave part of the thin glass layer formed by the resist are formed in the initial state of the etching of the glass substrate, the boundary gradually changes as the etching of the glass substrate proceeds. A smooth wave-like structure having the thin film transistor portion and the wiring portion as a cycle can be formed. For this reason, the effect that the thin glass layer has irregularities as shown in the first embodiment can also be obtained in this embodiment. In the present embodiment, the thick region of the thin glass layer may be a square, a rectangle, a trapezoid or the like with a rounded cross section. Further, the size of the convex portion does not have to be exactly the same shape as the element portion and the wiring structure portion, and may be slightly larger or smaller.

  In this embodiment, the selectivity by resist soft baking is used. However, the present invention is not limited to this. For example, when resist residue or the like becomes a problem, the resist having a pattern formed may be hydrofluoric to some extent. Hard bake at about 140 ° C. Then, after etching the glass substrate once by about 5 μm using a hydrofluoric acid-based solution added with ammonium or the like that can reduce the influence on the resist, the resist is removed, and then the glass substrate is etched. A similar structure can be obtained.

  Further, in this embodiment, after forming the thin film transistor portion and the wiring portion of the signal line and the gate line, since the exposure is performed from the surface on which the thin film portion is not formed, the thin glass layer of the portion including all of them is thickened. However, it is not limited to this. For example, in an active matrix display device, when a structure that allows more flexibility in the signal line direction is required, if the thin glass layer directly below the signal line is thick, the flexibility is hindered. Therefore, it is also possible to form a resist pattern on the back surface of the glass substrate before forming the signal line and then form the signal line. Similarly, it is possible to form a thin glass layer in a region corresponding only to the active element. Further, the thickness difference between the thickened region of the thin glass layer and the thinned region of the thin glass layer is about 1/50 to 1/2 of the thickness of the thick region. It is preferable. This reason is the same reason as in the first embodiment.

  Further, depending on the periodicity of the wavy shape and the characteristics of the display device, an arbitrary pattern may be formed by performing exposure using a mask in the same manner as a normal photoetching process when forming the back surface pattern. As shown in the first embodiment, as a process for forming a thin glass layer having a concavo-convex that is 1/50 or less of the thickness, exposure of a resist using a mask in the same manner as a normal photoetching process The unevenness of the thin glass layer may be formed.

(Second reference form)
Next, a second reference embodiment of the present invention will be described. FIG. 24 is a cross-sectional view showing an active matrix display device according to this embodiment . 27 to 29 are cross-sectional views showing a method for manufacturing the active matrix display device of this embodiment . Although only two elements are shown in FIGS. 24 and 26 to 29, a large number of these elements are actually arranged in a two-dimensional array. Details of the thin film transistor are omitted. For this reference embodiment , only the differences from the first embodiment will be described, and the same parts will be omitted.

  In this embodiment, an active element is formed using a glass substrate as an element formation substrate, and the element formation substrate is thinned to form a thin glass layer, and then a thin glass layer is formed using a material having a larger linear expansion coefficient than glass. A compressive stress applying layer is formed on the polished surface of this, and this is cooled to apply compressive stress to the surface of the thin glass layer.

  Many glass substrates are processed so that compressive stress is applied to the surfaces on both sides as shown in FIG. 25 in order to increase the strength. This is because the crack progress leading to the destruction of the glass substrate is caused by the application of tensile stress to the crack tip. The above-described compressive stress is also applied to both sides of an alkali-free glass substrate usually used in an active matrix display device. When a thin film transistor or the like is formed on a glass substrate to form a thin glass layer, as shown in FIG. 26, a compressive stress is applied to the surface of the thin glass layer 103 on the side where the thin film transistor 105 is formed. It has become. However, a tensile stress is applied to the surface of the thin glass layer 103 on the side where the thin film transistor 105 is not formed because the surface is thinned. Therefore, if there is a crack, the tensile stress is applied from the initial state, and in addition to this, the tensile stress is easily applied by bending the entire display device, etc. A tensile stress will be applied.

  Therefore, after forming a thin glass layer, the mechanical strength of the thin glass layer can be improved by forming a compressive stress application layer on the surface of the thin glass layer opposite to the surface on which the thin film transistor is formed. Although some compressive stress can be applied by the adhesive layer that bonds the thin glass layer and the plastic substrate, a strong compressive stress cannot be applied. By adopting the configuration of this embodiment, even when a soft material such as an epoxy-based adhesive is used as the adhesive layer, stress is applied to the thin glass layer without the stress being relaxed by the adhesive layer. Can do. At this time, the compression stress application layer has a linear expansion coefficient larger than that of the glass substrate, and after the compression stress application layer is formed, it is cooled, and the compression stress is applied to the thin glass layer by contraction of the compression stress application layer. It is important to apply.

  Next, a method for manufacturing the active matrix display device of this embodiment will be described with reference to FIGS. Since the manufacturing method of the active element may be performed in the same manner as in the first embodiment, the description is omitted. In the present embodiment, a case where a reflective liquid crystal display device is used as a compressive stress application layer and a reflective layer is shown.

  As shown in FIG. 27, a surface of a glass substrate 201 on which the thin film transistor 105 is formed is coated with an adhesive having excellent hydrofluoric acid resistance, which has weak adhesive strength when irradiated with ultraviolet light. An intermediate substrate made of a fluorine-based resin sheet having excellent hydrofluoric acid resistance and the like, in which the adhesion surface side is coated to improve the adhesion to the organic material at a position facing the glass substrate 201 with the temporary attachment layer 204 interposed therebetween. 205 is arranged.

As shown in FIG. 28, the glass substrate 201 is polished to a thickness of about 0.1 mm using an abrasive while adjusting the roughness of the abrasive to form a thin glass layer 103. Thereafter, the whole is impregnated with a hydrofluoric acid solvent to dissolve the thin glass layer 103 to a thickness of about 30 μm. At this time, after the glass substrate is thinned, for example, a hydrofluoric acid-based solution to which ammonium or the like is added and an etching rate adjusted is desirable. Then, after sufficiently washing, aluminum (on the surface where the thin film transistor 105 of the thin glass layer 103 is not formed, that is, the etched surface, is formed.
A compressive stress application layer 501 is formed by depositing about 100 nm of Al) by sputtering. At this time, the substrate temperature is set to about 100 ° C.

  Next, the adhesive layer 102 is formed on the entire surface of the surface on which the compressive stress applying layer 501 is formed using an adhesive having excellent adhesion. A polyether amide resin (PES) film having a thickness of about 0.1 mm is adhered as a plastic substrate 101 to the opposite side of the adhesive layer 102 using a vacuum laminating technique. At this time, the bonding process is performed in a high temperature state of about 100 ° C.

Then, as shown in FIG. 29, the temperature is lowered to room temperature (for example, about 23 ° C.) at a temperature lowering rate of about 10 ° C./min. Usually, glass and aluminum differ in linear expansion coefficient difference by one digit or more. For example, for many glass substrates, the linear expansion coefficient is on the order of 10 ⁻⁷ / ° C., whereas the linear expansion coefficient of aluminum is about 2 × 10 ⁻⁵ / ° C. For this reason, as indicated by the arrows in the figure, the compressive stress application layer 501 shrinks in the temperature lowering process, and the thin glass layer 103 does not shrink so much. Therefore, in the temperature lowering process after forming the compressive stress application layer 501, A compressive stress is applied to the surface of the glass layer 103 on the compressive stress applying layer side.

  Thereafter, the active matrix display device of this embodiment is completed in the same manner as in the first embodiment.

  In the present embodiment, there is a possibility that a phenomenon in which the entire active matrix substrate is warped may occur due to stress relaxation during the temperature lowering process after bonding the thin glass layer and the plastic substrate. In order to prevent this, for example, the active matrix substrate may be sandwiched between glass substrates having a sufficient thickness of about 1.1 mm and excellent surface smoothness, and the temperature may be lowered.

  In the present embodiment, by providing a compressive stress application layer on the surface of the thin glass layer that contacts the adhesive layer, even on the back side of the thin glass layer to which no compressive stress is applied, the presence of tensile stress that causes cracks to progress is prevented. be able to.

  In the present embodiment, aluminum is used as the compressive stress application layer because the case of the reflective liquid crystal display device is shown, but the material of the compressive stress application layer is not limited to this. For example, a material having a larger linear expansion coefficient than glass, such as molybdenum or copper, may be used. Further, although the sputtering method is used as the film forming method, it is not limited to this, and a chemical vapor deposition method or the like may be used. However, since a compressive stress due to the difference in linear expansion coefficient needs to be applied to the surface of the thin glass layer, for example, a film forming method capable of heating at a temperature of about 150 ° C. that does not damage the thin glass layer. desirable. Furthermore, in this embodiment, a metal material that does not transmit light is used as the compressive stress application layer. However, when light transmission is required as in a transmission type liquid crystal display device, it is necessary to use a light transmitting material. is there. At this time, a glass or the like having a linear expansion coefficient larger than that of the thin glass layer can be dealt with, for example, by using RF sputtering. For example, when an aluminosilicate silicate glass material is used as the element forming substrate, a lead-based glass such as lead caustic soda having a large linear expansion coefficient or a blue plate glass such as soda lime may be used as the compressive stress application layer. it can. At this time, since there is almost no high-temperature process or chemical treatment after the compressive stress application layer is formed, there is no problem even if a glass material that is inferior in heat resistance or chemical resistance, such as lead-based glass or blue plate glass, is used.

(Third reference form)
Next, a third reference embodiment of the present invention will be described. FIG. 30 is a cross-sectional view showing an active matrix display device according to this embodiment . In FIG. 30, only two elements are shown, but in reality, a large number of these elements are arranged in a two-dimensional array. Details of the active elements are omitted. For this reference embodiment , only the differences from the first embodiment will be described, and the same parts will be omitted.

  In the present embodiment, a hydroxyl intrusion prevention layer is provided that prevents the entry of molecules having hydroxyl groups that promote the development of cracks present on the surface of the thin glass layer on the side of the adhesive layer that adheres to the plastic substrate. On the surface of the thin glass layer on the side where the active element is to be formed, as shown in the first embodiment, an undercoat layer such as a silicon oxide film is provided in order to prevent elution of trace alkali components from the glass substrate side. Forming. When viewed from the thin glass layer side, this prevents the invasion of molecules having a hydroxyl group entering from the active element side. However, on the polishing surface side of the thin glass layer, there is no layer that prevents the entry of a molecule having a hydroxyl group into a crack existing on the surface. For this reason, for example, molecules having a hydroxyl group contained in moisture in the air and the adhesive layer easily enter the tip of the crack, which promotes the progress of the crack leading to breakage. Therefore, introducing a layer that prevents the entry of molecules having a hydroxyl group into the polished surface of the thin glass layer greatly contributes to the improvement of the strength of the glass layer.

  As shown in FIG. 30, the active matrix display device according to the present embodiment does not form the unevenness in the thin glass layer 103 as in the first embodiment, and a hydroxyl group is formed between the thin glass layer 103 and the adhesive layer 102. The difference from the first embodiment is that an intrusion prevention layer 601 is provided.

  In addition, the manufacturing method of the active matrix type display device of this embodiment does not form the unevenness as in the first embodiment in the thin glass layer 103 after the glass substrate is thinned to form the thin glass layer 103, and the hydroxyl group is formed. The difference from the first embodiment is that an intrusion prevention layer 601 is formed. The hydroxyl intrusion prevention layer 601 may be treated by applying a silane coupling agent such as diclodoxypropyltrimethylsilane on the polished surface side of the glass at a relatively low temperature of about 70 ° C. for about 1 hour. By providing the hydroxyl intrusion prevention layer 601, on the polishing surface side of the thin glass layer 103, oxygen atoms and hydrogen atoms of the silane coupling agent form hydrogen bonds in the hydroxyl intrusion prevention layer 601 located at the outermost surface of the thin glass layer 103. Form. For this reason, since the alkyl group exists on the surface of the hydroxyl group intrusion prevention layer 601, it is possible to prevent the entry of molecules having a hydroxyl group.

As the hydroxyl intrusion prevention layer 601, a silane coupling agent can be used, and preferably glycidoxypropyl-trimethoxysilane, methacryloxypropyl-trimethoxysilane, trimethoxysilylpropyl-ethylenediamine, tridecafluorooctyl-tri A layer containing at least one selected from ethoxysilane can be used.

  In each of the above-described embodiments, an example of a liquid crystal display device using a liquid crystal layer as a display unit has been described. However, the present invention is not limited to a liquid crystal display device and can be applied to all devices that require matrix driving. Needless to say. For example, even when a self-luminous display device such as an organic EL, an electrophoretic element, or a liquid crystal is used, the counter electrode is eliminated and a pair of comb-shaped pixel electrodes is provided on the element circuit region side. A method of driving the liquid crystal by applying an electric field in the display surface direction may be applied. When an organic EL is used as the display unit, a configuration using a current drive type peripheral driver circuit, a selection switch with 2 to 6 transistors, a current supply drive transistor, a transistor characteristic variation correction circuit, etc. in the pixel, etc. However, it is preferable to use a conventional circuit for these circuit configurations. Further, a circuit using a plurality of thin film transistors may be used as the active element.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the active matrix type display apparatus which concerns on the 1st Embodiment of this invention, (a) is a top view, (b) is sectional drawing between A-A '. It is sectional drawing which shows 1 process of the formation method of the active element of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the formation method of the active element of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the formation method of the active element of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the formation method of the active element of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the formation method of the active element of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the transfer method of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the transfer method of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the transfer method of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the transfer method of the active matrix type display apparatus which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows typically the thin glass layer after a physical grinding | polishing process. It is sectional drawing which shows typically the thin glass layer after performing a chemical polishing process after a physical polishing process. It is sectional drawing which shows typically the thin glass layer of the state in which the physical grinding | polishing process was performed to the glass substrate and the crack remained. It is sectional drawing which shows typically the thin glass layer of the state in which the physical grinding | polishing process was performed to the glass substrate and the crack remained. It is sectional drawing which shows typically the thin glass layer of the state in which the physical grinding | polishing process was performed to the glass substrate and the crack remained. It is sectional drawing explaining the relaxation | moderation of the stress by the unevenness | corrugation of a thin glass layer. It is sectional drawing explaining the relaxation | moderation of the stress by the unevenness | corrugation of a thin glass layer. It is sectional drawing explaining the relaxation | moderation of the stress by the unevenness | corrugation of a thin glass layer. It is sectional drawing which shows the active matrix type display apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the active matrix type display apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing explaining the state of the stress applied to the normal glass substrate. It is sectional drawing explaining the state of the stress applied to a thin glass layer, when thinning a normal glass substrate into a thin glass layer. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix type display apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing which shows the active matrix type display apparatus which concerns on the 4th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Plastic substrate 102 ... Adhesion layer 103 ... Thin glass layer 104 ... Undercoat layer 105 ... Thin film transistor 106 ... Liquid crystal layer 107 ... Counter electrode 108 ... Counter substrate 110 ... Active layer 111 ... Gate insulating film 112 ... Gate electrode 113 ... Interlayer insulation Film 114 ... Source / drain electrode 115 ... Pixel electrode 201 ... Glass substrate 202 ... Gate line group 203 ... Signal line group 204 ... Fixing layer 205 ... Intermediate substrate 301 ... Crack 302 ... Roughness 401 ... Thick region 402 of thin glass layer ... Thin region 403 of thin glass layer ... resist 501 ... compressive stress applying layer 601 ... hydroxyl intrusion prevention layer

Claims (1)

A plastic substrate,
Provided through a contact adhesive layer to the plastic substrate, and the film thickness 5μm or more, 100 [mu] m or less of the thin glass layer having an irregular shape on a surface in contact with the adhesive layer,
An active element provided for each pixel on the thin glass layer;
A display unit provided on the thin glass layer and driven by the active element and capable of being displayed for each pixel;
A counter substrate provided on the display unit,
An active matrix display device, wherein a thickness of a region corresponding to at least the active element of the thin glass layer is larger than thicknesses of other regions.

Images