JP4545956B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
JP4545956B2
JP4545956B2 JP2001004434A JP2001004434A JP4545956B2 JP 4545956 B2 JP4545956 B2 JP 4545956B2 JP 2001004434 A JP2001004434 A JP 2001004434A JP 2001004434 A JP2001004434 A JP 2001004434A JP 4545956 B2 JP4545956 B2 JP 4545956B2
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Prior art keywords
light emitting
internal lead
semiconductor device
wire
led light
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JP2001004434A
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JP2002208739A (en
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孝史 上田
清浩 五十川
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2001004434A priority Critical patent/JP4545956B2/en
Priority to US10/043,898 priority patent/US6940184B2/en
Publication of JP2002208739A publication Critical patent/JP2002208739A/en
Priority to US11/036,508 priority patent/US7071034B2/en
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Description

【０００１】
【発明の属する技術分野】
本願発明は、たとえばＬＥＤ発光素子などの光学半導体素子を封入するようにして形成された樹脂パッケージを有する半導体装置、およびその製造方法に関する。
【０００２】
【従来の技術】
光学半導体装置には、半導体素子としてＬＥＤ発光素子を用いた発光ダイオードがある。従来の発光ダイオードの代表的な構成例を図７に示す。また、図７のVIII-VIII線に沿う断面図を図８に示す。この発光ダイオード１００は、たとえば、携帯型電話機におけるプッシュボタンのバックライト用の光源や、フォトインタラプタの発光部などに適用されるタイプのものである。図７および図８に示すように、この発光ダイオード１００は、ＬＥＤ発光素子１が搭載された第１の内部リード２と、上記ＬＥＤ発光素子１とワイヤ４を介して導通接続された第２の内部リード３と、上記ＬＥＤ発光素子１とワイヤ４とを封入するようにして形成された透光性の樹脂パッケージ５と、を備えている。また、この発光ダイオード１００では、上記パッケージ５内において、ＬＥＤ発光素子１は、緩衝材１０７によって包囲されている。
【０００３】
上記ＬＥＤ発光素子１は、Ｐ型半導体層、発光層、およびｎ型半導体層を順次エピタキシャル成長させてなる半導体ウエハに対し、電極を形成した上、ダイシングによって所望のサイズにカットされたチップに分割するという手法によって製造される。
【０００４】
上記緩衝材１０７は、上記樹脂パッケージ５を形成する際に上記ＬＥＤ発光素子１が破損するのを防止するために形成される部品であり、上記樹脂パッケージ５を形成する前に形成される。このような緩衝材１０７は、ＪＣＲ（Junction Coating Resin）と呼ばれる軟質樹脂から形成される。
【０００５】
上記樹脂パッケージ５は、材料コストが比較的安価である点、ならびに加熱硬化により容易に形成することができる点などから、フィラを含有しない透光性エポキシ樹脂から形成されるのが一般的である。
【０００６】
エポキシ樹脂用いて樹脂パッケージ５を形成するには、型枠に所定の形状に形成されたキャビティ内に、ＬＥＤ発光素子１、ワイヤ４、第１の内部リード２および第２の内部リード３をセットし、溶融した上記エポキシ樹脂を注入し、これを加熱硬化させる。このとき、エポキシ樹脂は、キャビティ内で熱膨張しようとするため、ＬＥＤ発光素子１を押圧する。このＬＥＤ発光素子１は、上記したように、ウエハをカットすることにより形成されているため、カット時の応力によってカット面にひずみが生じている場合がある。したがって、ＬＥＤ発光素子１は、エポキシ樹脂で押圧されることにより、カット面が破損してしまうことがある。特に、発光ダイオードを製造する場合には、黒色エポキシ樹脂に比して線膨張係数がかなり大きい透光性エポキシ樹脂を使用しているため、樹脂パッケージ５内の半導体素子（ＬＥＤ発光素子１）が破損する可能性が高くなる。
【０００７】
しかし、この従来例では、ＬＥＤ発光素子１は、樹脂パッケージ５を形成する前に予め上記緩衝材１０７によって包み込まれているので、樹脂パッケージ５の形成時におけるＬＥＤ発光素子１への押圧力は、緩衝材１０７の弾性により吸収される。このようにして、緩衝材料１０７は、ＬＥＤ発光素子１を保護することができる。軟質樹脂としては、具体的には、透光性のあるシリコーンレジンが採用されるのが一般的である。
【０００８】
しかしながら、シリコーンレジンは、ゲル状材料を用いて形成されるため、緩衝材１０７の厚みが大となってしまう。さらに、緩衝材１０７の形状を均一にするのが困難となる。これにより、ＬＥＤ発光素子１から発せられた光を屈折させてしまうレンズ効果が緩衝材１０７に生じてしまうとともに、このレンズ効果が個々の発光ダイオードごとに異なってしまう。
【０００９】
また、シリコーンレジンを用いて緩衝材１０７を形成するには、ゲル状材料でＬＥＤ発光素子１を包囲し、これを炉などで加熱硬化させなければならず、発光ダイオード１００の製造効率が悪い。
【００１０】
【発明が解決しようとする課題】
本願発明は、上記した事情のもとで考え出されたものであって、樹脂パッケージ内において、半導体素子が破損するのを防止するための保護材にレンズ効果が生じるのを防止することができる半導体装置、およびその製造方法を提供することをその課題とする。
【００１１】
【発明の開示】
上記課題を解決するため、本願発明では、次の技術的手段を講じている。
【００１２】
すなわち、本願発明の第１の側面により提供される半導体装置は、半導体素子が搭載された第１の内部リードと、上記半導体素子とワイヤを介して導通接続された第２の内部リードと、上記半導体素子と上記ワイヤとを封入するようにして形成された樹脂パッケージと、を備えている半導体装置であって、上記樹脂パッケージ内において、上記第１の内部リードと、上記半導体素子と、上記ワイヤと、上記第２の内部リードとは、非晶性フッ素樹脂を含有した被膜でコーティングされていることを特徴としている。
【００１３】
本願発明の第１の側面においては、非晶性フッ素樹脂は、一般的に耐圧縮性に優れ、かつディッピングや吹き付けなどのコーティング加工に適した樹脂であることから、上記被膜を、上記樹脂パッケージ形成時における半導体素子の保護材として、厚みが薄くなるように形成することが可能となる。したがって、被膜にレンズ効果が生じるのを防止することができる。
【００１４】
本願発明の第２の側面により提供される半導体装置の製造方法は、半導体素子が搭載された第１の内部リードと、上記半導体素子とワイヤを介して導通接続された第２の内部リードと、上記半導体素子と上記ワイヤとを封入するようにして形成された樹脂パッケージと、を備えている半導体装置を製造する方法であって、上記樹脂パッケージを形成する前に、上記第１の内部リードと、上記半導体素子と、上記ワイヤと、上記第２の内部リードとを、非晶性フッ素樹脂が含有された被膜でコーティングすることを特徴としている。
【００１５】
具体的には、上記半導体素子は、ＬＥＤ発光素子であり、かつ、上記樹脂パッケージは、透光性樹脂により形成される。
【００１６】
好ましい実施の形態においては、上記非晶性フッ素樹脂は、ＰＴＦＥである。
【００１７】
この製造方法は、上記した本願発明の第１の側面に係る半導体装置の製造方法である。したがって、本願発明の第１の側面に係る半導体装置について上述したのと同様の利点を享受することができる。
【００１８】
好ましい実施の形態においてはまた、上記被膜は、揮発性の溶剤に非晶性フッ素樹脂を含有させたものを塗布し、それを乾燥させることによって形成される。
【００１９】
このような構成によれば、粘度が低い状態で塗布することができるので、薄状の緩衝被膜を簡便に形成することができる。また、従来の緩衝材に用いられるシリコーンレジンのように硬化用の炉などを用いて加熱硬化させる必要がなく、自然乾燥によって形成されるので、半導体装置の製造効率を向上させることができる。
【００２０】
本願発明のその他の特徴および利点については、以下に行う発明の実施の形態の説明から、より明らかになるであろう。
【００２１】
【発明の実施の形態】
以下、本願発明の好ましい実施の形態について、図面を参照して具体的に説明する。
【００２２】
図１は、本願発明に係る半導体装置の一例を示す概略斜視図、図２は、図１のII-II線に沿う断面図、図３は、図２における半導体素子を拡大して示す断面図である。図４ないし図６は、本願発明に係る半導体装置の製造方法を説明するための図であり、図５は、図４のV-V線に沿う断面図である。なお、これらの図において、従来例を示す図７および図８に表された部材、部分等と同等のものにはそれぞれ同一の符号を付してある。
【００２３】
図１および図２に表れているように、本願発明の半導体装置は、半導体素子１が搭載された第１の内部リード２と、上記半導体素子１とワイヤ４を介して導通接続された第２の内部リード３と、上記半導体素子１と上記ワイヤ４とを封入するようにして形成された樹脂パッケージ５と、を備えている。この半導体装置は、本実施形態では、半導体素子１としてＬＥＤ発光素子を用いた発光ダイオードＡである。
【００２４】
上記半導体素子（ＬＥＤ発光素子）１は、図３に示すように、ｎ型（またはｐ型）半導体層１０ａ、ｐ型（またはｎ型）半導体層１０ｂ、およびこれらの間に介在する活性層１０ｃを備えるチップ本体１０と、チップ本体の下面に形成された全面電極１ｂと、チップ本体の上面に形成された電極パッド１ａとを備えている。このＬＥＤ発光素子１は、第１の内部リード２に対して全面電極１ｂ側でチップボンディングされ、第２の内部リード３に対して電極パッド１ａがワイヤボンディングされ、各電極１ａ，１ｂ間に電流を流すと活性層１０ｃが発光するように構成されている。
【００２５】
このようなＬＥＤ発光素子１は、Ｐ型半導体層、発光層、およびｎ型半導体層を順次エピタキシャル成長させてなる半導体ウエハに対し、上記全面電極１ｂおよび電極パッド１ａを形成した上、ダイシングによって所望のサイズにカットされたチップに分割するという手法によって製造される。
【００２６】
上記ワイヤ４は、上記ワイヤボンディングの際に形成される。ワイヤ４は、電導性の優れた金線などから形成されている。
【００２７】
上記第１の内部リード２は、樹脂パッケージ５の外側に配置された第１の外部リード２ａと連続して、第１リード２０を構成している。これと同様に、上記第２の内部リード３は、第２の外部リード３ａとともに第２リード３０を構成している。これらの第１リード２０および第２リード３０は、銅や鉄などの金属板を打ち抜き形成して得られるリードフレームの一部として形成される。より詳細には、図４に示すように、リードフレーム６は、横方向に延びるサイドフレーム６０を有しており、複数の第１および第２リード２０…，３０…は、サイドフレーム６０の一長辺から縦方向に延びるように形成されている。
【００２８】
上記樹脂パッケージ５は、本実施形態では、透光性樹脂により形成されている。具体的には、材料コストが比較的安価である点、ならびに加熱により容易に硬化させることができる点などから、フィラを含有しない透光性エポキシ樹脂が用いられている。
【００２９】
また、上記樹脂パッケージ５内において、上記第１の内部リード２と、ＬＥＤ発光素子１と、ワイヤ４と、第２の内部リード３とは、非晶性フッ素樹脂を含有した被膜７でコーティングされている。
【００３０】
上記被膜７は、上記樹脂パッケージ５の形成時におけるＬＥＤ発光素子１の保護材として形成されるものである。一般的に、非晶性フッ素樹脂は、耐圧縮性に優れ、かつディッピングや吹き付けによってコーティング加工が可能な樹脂であるので、被膜７の厚みを薄く（たとえば、約１０μｍ程度）することができる。
【００３１】
なお、非晶性フッ素樹脂としては、具体的には、ＰＴＦＥが使用される。ＰＴＦＥは、圧縮強さが非常に大である透明なフッ素樹脂である。
【００３２】
以下、半導体装置（発光ダイオード）Ａの製造方法を順を追って説明する。なお、以下の工程は、第１の内部リード２および第２の内部リード３が上記リードフレーム６に形成された状態で行なわれる。
【００３３】
発光ダイオードＡを製造するには、まず、第１の内部リード２にＬＥＤ発光素子１を搭載する。この工程において、ＬＥＤ発光素子１は、上記第１の内部リード２に形成されたチップボンディング領域（図示略）に下面側でチップボンディングされる。これによって、ＬＥＤ発光素子１と第１の内部リード２とが導通接続されるとともに、ＬＥＤ発光素子１が第１の内部リード２上に機械的に支持される。
【００３４】
次いで、ＬＥＤ発光素子１の電極パッド１ｃと第２の内部リード３とをワイヤ４を介して導通接続する。この工程において、ＬＥＤ発光素子１の電極パッド１ｃは、上記第２の内部リード３に形成されたワイヤボンディング領域（図示略）に金線などからなるワイヤ４によって結線される。これによって、ＬＥＤ発光素子１と第２の内部リード３とが導通接続される。ワイヤ４は、ＬＥＤ発光素子１の電極パッド１ｃに対しては、いわゆるボールボンディングされ、第２の内部リード３に対しては、いわゆるスティッチボンディングされる。
【００３５】
次いで、図５に示すように、第１の内部リード２と、ＬＥＤ発光素子１と、ワイヤ４と、第２の内部リード３とを、非晶性フッ素樹脂が含有された被膜７でコーティングする。この工程において、被膜７は、揮発性の溶剤に非晶性フッ素樹脂を含有させたもの（被膜剤７０）を塗布し、それを乾燥させることによって形成される。このとき、被膜剤７０を粘度が低い状態で塗布することができるので、薄状の緩衝被膜を簡便に形成することができる。
【００３６】
上記被膜剤７０の塗布は、本実施形態では、図４に示すように、ＬＥＤ発光素子１、ワイヤ４、内部リード２、および第２の内部リード３を被膜剤７０を入れた溶液槽中に浸漬する、いわゆるディッピングにより行うことができる。この方法では、上記リードフレーム６に複数形成された状態の第１および第２の内部リード２…，３…に対して、一括して被膜剤７０の塗布を行うことができる。また、被膜剤７０には、揮発性の溶剤が用いられていることから、これを自然乾燥するだけでよい。したがって、従来のように、硬化用の炉などを用いて加熱硬化させる必要がないため、発光ダイオードの製造効率を向上させることができる。
【００３７】
なお、被膜剤７０の塗布は、本実施形態では、ディッピングにより行なわれているが、第１および第２の内部リード２，３に対して、被膜剤７０を吹き付けるようにしてもよい。
【００３８】
次いで、上記樹脂パッケージ５を形成する。この工程では、図６に示すように、型枠８を用いる注型法などが採用される。この方法では、まず、型枠８に所定の形状に形成されたキャビティ８０内に、上記被膜７のコーティング工程を終えた第１および第２の内部リード２，３をセットする。その後、このキャビティ８０内に溶融したエポキシ樹脂５０を注入し、これを加熱硬化させる。
【００３９】
そして、上記第１および第２リード２０…，３０…をリードフレーム６から切り離すことにより、発光ダイオードＡが得られる。
【００４０】
次に、上述した半導体装置（発光ダイオード）の製造方法における作用について簡単に説明する。
【００４１】
上記樹脂パッケージ５を形成する際、上記エポキシ樹脂５０を加熱硬化させるときに、エポキシ樹脂５０がキャビティ８０内で熱膨張しようとし、上記ＬＥＤ発光素子１がエポキシ樹脂５０により押圧される。このＬＥＤ発光素子１は、上記被膜７によりコーティングされているので、被膜７の耐圧縮性により破損するのが防止される。すなわち、上記被膜７は、従来における緩衝材１０７の代わりに形成されるものである。
【００４２】
そして、上記被膜７は、耐圧縮性に優れ、かつディッピングや吹き付けによるコーティング加工が可能である非晶性フッ素樹脂から形成されているので、ＬＥＤ発光素子の保護材としての効果を維持したままの状態で、厚みが薄くなるように形成されうる。したがって、ＬＥＤ発光素子１から発せられた光を屈折させてしまうレンズ効果が上記被膜７に生じるのを防止することができる。
【００４３】
以上、説明したように、本願発明によれば、樹脂パッケージ内において、半導体素子が破損するのを防止するための保護材にレンズ効果が生じるのを防止することができる。
【００４４】
もちろん、本願発明の範囲は、上述した実施形態に限定されるものではない。
たとえば、上記実施形態では、光学半導体素子として、ＬＥＤ発光素子が用いられているが、フォトダイオードあるいはフォトトランジスタなどの受光素子に用いてもよい。
【図面の簡単な説明】
【図１】本願発明に係る半導体装置の一例を示す概略斜視図である。
【図２】図１のII-II線に沿う断面図である。
【図３】図２における半導体素子を拡大して示す断面図である。
【図４】本願発明に係る半導体装置の製造方法を説明するための図である。
【図５】図４のV-V線に沿う断面図である。
【図６】本願発明に係る半導体装置の製造方法を説明するための図である。
【図７】従来の半導体装置の一例を示す概略斜視図である。
【図８】図７のVIII-VIII線に沿う断面図である。
【符号の説明】
１ 半導体素子
２ 第１の内部リード
３ 第２の内部リード
４ ワイヤ
５ 樹脂パッケージ
７ 被膜
Ａ 半導体装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device having a resin package formed so as to enclose an optical semiconductor element such as an LED light emitting element, and a method for manufacturing the same.
[0002]
[Prior art]
An optical semiconductor device includes a light emitting diode using an LED light emitting element as a semiconductor element. A typical configuration example of a conventional light emitting diode is shown in FIG. Further, FIG. 8 shows a cross-sectional view taken along line VIII-VIII in FIG. The light emitting diode 100 is of a type applied to, for example, a light source for a backlight of a push button in a mobile phone or a light emitting portion of a photo interrupter. As shown in FIGS. 7 and 8, the light emitting diode 100 includes a first internal lead 2 on which the LED light emitting element 1 is mounted, and a second conductively connected to the LED light emitting element 1 via the wire 4. An internal lead 3 and a translucent resin package 5 formed so as to enclose the LED light emitting element 1 and the wire 4 are provided. In the light emitting diode 100, the LED light emitting element 1 is surrounded by the buffer material 107 in the package 5.
[0003]
The LED light-emitting element 1 is formed by dividing electrodes into chips cut to a desired size by dicing after forming electrodes on a semiconductor wafer formed by sequentially epitaxially growing a P-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer. It is manufactured by the method.
[0004]
The buffer material 107 is a component formed to prevent the LED light emitting element 1 from being damaged when the resin package 5 is formed, and is formed before the resin package 5 is formed. Such a buffer material 107 is made of a soft resin called JCR (Junction Coating Resin).
[0005]
The resin package 5 is generally formed from a translucent epoxy resin that does not contain a filler because the material cost is relatively low and the resin package 5 can be easily formed by heat curing. .
[0006]
In order to form the resin package 5 using an epoxy resin, the LED light emitting element 1, the wire 4, the first internal lead 2 and the second internal lead 3 are set in a cavity formed in a predetermined shape on the mold. Then, the molten epoxy resin is poured and this is heated and cured. At this time, since the epoxy resin tends to thermally expand in the cavity, the LED light emitting element 1 is pressed. Since the LED light emitting element 1 is formed by cutting a wafer as described above, there is a case where the cut surface is distorted due to stress at the time of cutting. Therefore, the cut surface of the LED light emitting element 1 may be damaged by being pressed with the epoxy resin. In particular, when a light emitting diode is manufactured, a translucent epoxy resin having a considerably large linear expansion coefficient as compared with a black epoxy resin is used. Therefore, a semiconductor element (LED light emitting element 1) in the resin package 5 is provided. The possibility of breakage increases.
[0007]
However, in this conventional example, the LED light-emitting element 1 is wrapped in advance by the buffer material 107 before the resin package 5 is formed. Therefore, the pressing force applied to the LED light-emitting element 1 when the resin package 5 is formed is It is absorbed by the elasticity of the buffer material 107. In this way, the buffer material 107 can protect the LED light emitting element 1. As the soft resin, specifically, a translucent silicone resin is generally used.
[0008]
However, since the silicone resin is formed using a gel material, the thickness of the buffer material 107 is increased. Furthermore, it is difficult to make the shape of the buffer material 107 uniform. As a result, a lens effect that refracts the light emitted from the LED light emitting element 1 is generated in the buffer material 107, and this lens effect is different for each light emitting diode.
[0009]
Moreover, in order to form the buffer material 107 using a silicone resin, the LED light-emitting element 1 must be surrounded by a gel material and heated and cured in a furnace or the like, and the manufacturing efficiency of the light-emitting diode 100 is poor.
[0010]
[Problems to be solved by the invention]
The present invention has been conceived under the circumstances described above, and can prevent the lens effect from occurring in the protective material for preventing the semiconductor element from being damaged in the resin package. It is an object to provide a semiconductor device and a manufacturing method thereof.
[0011]
DISCLOSURE OF THE INVENTION
In order to solve the above problems, the present invention takes the following technical means.
[0012]
That is, a semiconductor device provided by the first aspect of the present invention includes a first internal lead on which a semiconductor element is mounted, a second internal lead electrically connected to the semiconductor element through a wire, A semiconductor device comprising: a resin package formed so as to enclose a semiconductor element and the wire, wherein the first internal lead, the semiconductor element, and the wire are provided in the resin package. The second internal lead is coated with a film containing an amorphous fluororesin.
[0013]
In the first aspect of the present invention, the amorphous fluororesin is generally a resin excellent in compression resistance and suitable for coating processing such as dipping and spraying. As a protective material for the semiconductor element at the time of formation, it can be formed to have a small thickness. Therefore, it is possible to prevent the lens effect from occurring in the coating.
[0014]
A method of manufacturing a semiconductor device provided by the second aspect of the present invention includes a first internal lead on which a semiconductor element is mounted, a second internal lead electrically connected to the semiconductor element via a wire, A method of manufacturing a semiconductor device comprising: a resin package formed so as to enclose the semiconductor element and the wire, wherein the first internal lead is formed before the resin package is formed. The semiconductor element, the wire, and the second internal lead are coated with a film containing an amorphous fluororesin.
[0015]
Specifically, the semiconductor element is an LED light emitting element, and the resin package is formed of a translucent resin.
[0016]
In a preferred embodiment, the amorphous fluororesin is PTFE.
[0017]
This manufacturing method is a method for manufacturing a semiconductor device according to the first aspect of the present invention described above. Therefore, the same advantages as those described above for the semiconductor device according to the first aspect of the present invention can be obtained.
[0018]
In a preferred embodiment, the coating is formed by applying a volatile solvent containing an amorphous fluororesin and drying it.
[0019]
According to such a structure, since it can apply | coat in a state with low viscosity, a thin buffer film can be formed easily. In addition, it is not necessary to heat and cure using a curing furnace or the like like a silicone resin used in a conventional cushioning material, and since it is formed by natural drying, the manufacturing efficiency of the semiconductor device can be improved.
[0020]
Other features and advantages of the present invention will become more apparent from the following description of embodiments of the invention.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.
[0022]
1 is a schematic perspective view showing an example of a semiconductor device according to the present invention, FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1, and FIG. 3 is an enlarged cross-sectional view showing a semiconductor element in FIG. It is. 4 to 6 are views for explaining a method of manufacturing a semiconductor device according to the present invention, and FIG. 5 is a cross-sectional view taken along line VV in FIG. In these drawings, the same reference numerals are given to the equivalents of the members, portions, etc. shown in FIGS. 7 and 8 showing the conventional example.
[0023]
As shown in FIGS. 1 and 2, the semiconductor device of the present invention includes a first internal lead 2 on which a semiconductor element 1 is mounted, and a second conductively connected to the semiconductor element 1 via a wire 4. And a resin package 5 formed so as to enclose the semiconductor element 1 and the wire 4. In this embodiment, this semiconductor device is a light emitting diode A using an LED light emitting element as the semiconductor element 1.
[0024]
As shown in FIG. 3, the semiconductor element (LED light emitting element) 1 includes an n-type (or p-type) semiconductor layer 10a, a p-type (or n-type) semiconductor layer 10b, and an active layer 10c interposed therebetween. , A full-surface electrode 1b formed on the lower surface of the chip main body, and an electrode pad 1a formed on the upper surface of the chip main body. The LED light-emitting element 1 is chip-bonded to the first internal lead 2 on the entire surface electrode 1b side, the electrode pad 1a is wire-bonded to the second internal lead 3, and a current is passed between the electrodes 1a and 1b. The active layer 10c is configured to emit light when flowing.
[0025]
Such an LED light-emitting element 1 is formed by forming the entire surface electrode 1b and the electrode pad 1a on a semiconductor wafer formed by sequentially epitaxially growing a P-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer, and then dicing with a desired one. It is manufactured by a technique of dividing into chips cut into sizes.
[0026]
The wire 4 is formed during the wire bonding. The wire 4 is formed of a gold wire having excellent electrical conductivity.
[0027]
The first internal lead 2 is connected to the first external lead 2 a arranged outside the resin package 5 to constitute a first lead 20. Similarly, the second internal lead 3 constitutes the second lead 30 together with the second external lead 3a. The first lead 20 and the second lead 30 are formed as part of a lead frame obtained by punching and forming a metal plate such as copper or iron. More specifically, as shown in FIG. 4, the lead frame 6 has a side frame 60 extending in the lateral direction, and the plurality of first and second leads 20, 30. It is formed to extend in the vertical direction from the long side.
[0028]
In the present embodiment, the resin package 5 is made of a translucent resin. Specifically, a translucent epoxy resin containing no filler is used because the material cost is relatively low and it can be easily cured by heating.
[0029]
Further, in the resin package 5, the first internal lead 2, the LED light emitting element 1, the wire 4, and the second internal lead 3 are coated with a film 7 containing an amorphous fluororesin. ing.
[0030]
The coating 7 is formed as a protective material for the LED light emitting element 1 when the resin package 5 is formed. In general, the amorphous fluororesin is a resin that is excellent in compression resistance and can be coated by dipping or spraying, so that the thickness of the film 7 can be reduced (for example, about 10 μm).
[0031]
Specifically, PTFE is used as the amorphous fluororesin. PTFE is a transparent fluororesin having a very high compressive strength.
[0032]
Hereinafter, a method for manufacturing the semiconductor device (light emitting diode) A will be described in order. The following steps are performed in a state where the first internal lead 2 and the second internal lead 3 are formed on the lead frame 6.
[0033]
To manufacture the light emitting diode A, first, the LED light emitting element 1 is mounted on the first internal lead 2. In this step, the LED light emitting element 1 is chip-bonded on the lower surface side to a chip bonding region (not shown) formed in the first internal lead 2. As a result, the LED light emitting element 1 and the first internal lead 2 are conductively connected, and the LED light emitting element 1 is mechanically supported on the first internal lead 2.
[0034]
Next, the electrode pad 1 c of the LED light emitting element 1 and the second internal lead 3 are electrically connected via the wire 4. In this step, the electrode pad 1c of the LED light emitting element 1 is connected to a wire bonding region (not shown) formed on the second internal lead 3 by a wire 4 made of a gold wire or the like. Thereby, the LED light emitting element 1 and the second internal lead 3 are conductively connected. The wire 4 is so-called ball bonded to the electrode pad 1 c of the LED light emitting element 1, and is so-called stitch bonded to the second internal lead 3.
[0035]
Next, as shown in FIG. 5, the first internal lead 2, the LED light emitting element 1, the wire 4, and the second internal lead 3 are coated with a film 7 containing an amorphous fluororesin. . In this step, the film 7 is formed by applying a volatile solvent containing an amorphous fluororesin (film agent 70) and drying it. At this time, since the coating agent 70 can be applied in a state of low viscosity, a thin buffer coating can be easily formed.
[0036]
In the present embodiment, the coating agent 70 is applied to the LED light emitting element 1, the wire 4, the internal lead 2, and the second internal lead 3 in a solution tank containing the coating agent 70, as shown in FIG. It can be performed by so-called dipping. In this method, the coating agent 70 can be applied collectively to the first and second internal leads 2... 3 formed in the lead frame 6. Moreover, since the volatile solvent is used for the film agent 70, it only needs to dry naturally. Therefore, unlike the conventional case, it is not necessary to heat and cure using a curing furnace or the like, so that the manufacturing efficiency of the light emitting diode can be improved.
[0037]
In this embodiment, the coating agent 70 is applied by dipping. However, the coating agent 70 may be sprayed onto the first and second internal leads 2 and 3.
[0038]
Next, the resin package 5 is formed. In this step, as shown in FIG. 6, a casting method using a mold 8 is employed. In this method, first, the first and second internal leads 2 and 3 that have finished the coating process of the film 7 are set in a cavity 80 formed in a predetermined shape in the mold 8. Thereafter, the melted epoxy resin 50 is injected into the cavity 80 and is cured by heating.
[0039]
Then, the light emitting diode A is obtained by separating the first and second leads 20... 30 from the lead frame 6.
[0040]
Next, the operation of the semiconductor device (light emitting diode) manufacturing method described above will be briefly described.
[0041]
When the resin package 5 is formed, when the epoxy resin 50 is heated and cured, the epoxy resin 50 tends to thermally expand in the cavity 80, and the LED light emitting element 1 is pressed by the epoxy resin 50. Since this LED light emitting element 1 is coated with the coating film 7, it is prevented from being damaged by the compression resistance of the coating film 7. That is, the film 7 is formed in place of the conventional buffer material 107.
[0042]
And since the said film 7 is formed from the amorphous fluororesin which is excellent in compression resistance and can be coated by dipping or spraying, the effect as a protective material of an LED light emitting element is maintained. In the state, it can be formed to be thin. Therefore, it is possible to prevent the lens effect that refracts the light emitted from the LED light emitting element 1 from occurring in the coating film 7.
[0043]
As described above, according to the present invention, it is possible to prevent the lens effect from occurring in the protective material for preventing the semiconductor element from being damaged in the resin package.
[0044]
Of course, the scope of the present invention is not limited to the embodiment described above.
For example, in the above embodiment, an LED light emitting element is used as the optical semiconductor element, but it may be used for a light receiving element such as a photodiode or a phototransistor.
[Brief description of the drawings]
FIG. 1 is a schematic perspective view showing an example of a semiconductor device according to the present invention.
2 is a cross-sectional view taken along line II-II in FIG.
3 is an enlarged cross-sectional view of the semiconductor element in FIG. 2;
FIG. 4 is a drawing for explaining the method for manufacturing a semiconductor device according to the present invention.
5 is a cross-sectional view taken along line VV in FIG.
FIG. 6 is a drawing for explaining the method for manufacturing a semiconductor device according to the present invention.
FIG. 7 is a schematic perspective view showing an example of a conventional semiconductor device.
8 is a cross-sectional view taken along line VIII-VIII in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 1st internal lead 3 2nd internal lead 4 Wire 5 Resin package 7 Coating A Semiconductor device

Claims (5)

半導体素子が搭載された第１の内部リードと、上記半導体素子とワイヤを介して導通接続された第２の内部リードと、上記半導体素子と上記ワイヤとを封入するようにして形成された樹脂パッケージと、を備えている半導体装置であって、
上記樹脂パッケージ内において、上記第１の内部リードと、上記半導体素子と、上記ワイヤと、上記第２の内部リードとは、非晶性フッ素樹脂を含有した被膜でコーティングされていることを特徴とする、半導体装置。A first internal lead on which a semiconductor element is mounted, a second internal lead electrically connected to the semiconductor element through a wire, and a resin package formed so as to enclose the semiconductor element and the wire A semiconductor device comprising:
In the resin package, the first internal lead, the semiconductor element, the wire, and the second internal lead are coated with a film containing an amorphous fluororesin. A semiconductor device. 半導体素子が搭載された第１の内部リードと、上記半導体素子とワイヤを介して導通接続された第２の内部リードと、上記半導体素子と上記ワイヤとを封入するようにして形成された樹脂パッケージと、を備えている半導体装置を製造する方法であって、
上記樹脂パッケージを形成する前に、上記第１の内部リードと、上記半導体素子と、上記ワイヤと、上記第２の内部リードとを、非晶性フッ素樹脂が含有された被膜でコーティングすることを特徴とする、半導体装置の製造方法。A first internal lead on which a semiconductor element is mounted, a second internal lead electrically connected to the semiconductor element through a wire, and a resin package formed so as to enclose the semiconductor element and the wire A method of manufacturing a semiconductor device comprising:
Before forming the resin package, the first internal lead, the semiconductor element, the wire, and the second internal lead are coated with a film containing an amorphous fluororesin. A method for manufacturing a semiconductor device. 上記非晶性フッ素樹脂は、ＰＴＦＥである、請求項２に記載の半導体装置の製造方法。The method for manufacturing a semiconductor device according to claim 2, wherein the amorphous fluororesin is PTFE. 上記被膜は、揮発性の溶剤に非晶性フッ素樹脂を含有させたものを塗布し、それを乾燥させることによって形成される、請求項２または３に記載の半導体装置の製造方法。4. The method of manufacturing a semiconductor device according to claim 2, wherein the coating is formed by applying a volatile solvent containing an amorphous fluororesin and drying the coating. 上記半導体素子は、ＬＥＤ発光素子であり、かつ、
上記樹脂パッケージは、透光性樹脂により形成される、請求項２ないし４のいずれかに記載の半導体装置の製造方法。The semiconductor element is an LED light emitting element, and
The method for manufacturing a semiconductor device according to claim 2, wherein the resin package is formed of a light-transmitting resin.
JP2001004434A 2001-01-12 2001-01-12 Semiconductor device and manufacturing method thereof Expired - Fee Related JP4545956B2 (en)

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