JP4411540B2 - Semiconductor laser device - Google Patents

Description

  The present invention relates to a semiconductor laser device having a light detection mechanism for detecting a laser beam, and more particularly to a semiconductor laser device that can be suitably applied to the use of an optical disk.

  2. Description of the Related Art Conventionally, a semiconductor laser device for use in an optical disk is provided with a light detection mechanism that detects laser light of a semiconductor laser incorporated in the semiconductor laser device. This light detection mechanism is generally provided separately from the semiconductor laser in a region where the light output of the laser is not attenuated, for example, on the rear end face side of the semiconductor laser (on the side opposite to the light emitting side), Thereafter, the laser beam is detected by absorbing the light leaking through the end face and converting it into a current signal.

  However, the rear end face of the semiconductor laser is usually covered with a high reflectivity film, and the output of light leaking through the rear end face is extremely small. Therefore, the light detection mechanism is required to have high sensitivity to the leaked light. Currently, in optical disk applications, 780 nm band laser light used for CD (Compact Disk) playback, CD-RW (CD Rewritable) or MD (Mini Disk) recordable optical disks, and DVD ( A multi-wavelength laser capable of outputting a 650 nm band laser beam used for recording / reproducing of a digital versatile disk is the mainstream. Thus, for example, as described in Patent Document 1, a silicon (Si) -based compound semiconductor photodiode (PD; Photo Diode) capable of obtaining high sensitivity to light in these long wavelength bands is a light detection mechanism. It is used as.

JP 2004-55744 A

  Incidentally, in recent years, a semiconductor laser having a short wavelength band (405 nm band) using a nitride-based III-V group compound semiconductor (hereinafter also referred to as a nitride-based semiconductor) typified by a GaN, AlGaN mixed crystal, and GaInN mixed crystal. Has been realized and has been put to practical use as a light source for higher density optical disks. In order to use such a short wavelength semiconductor laser as a light source for an optical disc, a light detection mechanism having high sensitivity to light in the short wavelength band is required.

  However, since the photodiode described above has low sensitivity to light in the 405 nm band, it cannot be used for a semiconductor laser in the short wavelength band. However, if the reflectivity of the rear end face of the semiconductor laser in the short wavelength band is lowered to increase the light output leaking from the rear end face, the threshold current increases, the laser light output decreases, and the relative noise intensity deteriorates. However, there is a problem that the laser characteristics are deteriorated, for example, reliability is lowered. In addition, instead of the photodiode described above, a light detection mechanism that detects light in the short wavelength band from the rear end face side or a light detection mechanism that detects a part of light from the end face on the light emission side may be provided separately. Although possible, if such a light detection mechanism dedicated to a semiconductor laser in a short wavelength band is applied to, for example, a multi-wavelength semiconductor laser device in which a plurality of semiconductor lasers are combined, the semiconductor laser device becomes complicated. There is.

  The present invention has been made in view of such problems, and an object thereof is to provide a semiconductor laser device capable of detecting laser light with a simple configuration.

The semiconductor laser device of the present invention includes a semiconductor layer formed by laminating a first conductivity type layer, an active layer, and a second conductivity type layer including a stripe-shaped current confinement structure thereon in this order. A plurality of electrodes are formed on the second conductivity type layer side of the semiconductor layer, and are electrically connected to the second conductivity type layer at a predetermined interval. The semiconductor layer of the active layer, in a region corresponding to the electrode (first electrode) except at least one of the plurality of electrodes, the light receiving converting the current signal absorbs part of the light emitted from the active layer Has a region. The plurality of electrodes are arranged in a direction perpendicular to the extending direction of the current confinement structure.

  In the semiconductor laser device of the present invention, part of the emitted light is absorbed and converted into a current signal in a region (light receiving region) corresponding to the first electrode in the semiconductor layer. Since the magnitude of the current signal has a predetermined correlation with the magnitude of the output of the emitted laser light, for example, the laser emitted by inputting the current signal to the optical output arithmetic circuit as the optical output monitor signal. The light output magnitude can be calculated by the light output calculation circuit. That is, the semiconductor laser device of the present invention includes a semiconductor laser having a light detection mechanism built in the light receiving region, and it is not necessary to provide the light detection mechanism separately from the semiconductor laser.

  According to the semiconductor laser device of the present invention, the light receiving region is provided in the region corresponding to the first electrode, and a part of the light emitted in the semiconductor layer is absorbed and converted into a current signal. A current signal having a correlation with the magnitude of light output can be extracted, and it is not necessary to provide a light detection mechanism such as a photodiode separately from the semiconductor laser. Thereby, a laser beam can be detected with a simple configuration.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
FIG. 1 shows the structure of a semiconductor laser device 10 according to the first embodiment of the present invention. 2 shows a cross-sectional configuration in the direction of arrows AA in FIG. 1, and FIG. 3 shows a cross-sectional configuration in the direction of arrows BB. Moreover, FIG. 1 thru | or FIG. 3 is represented typically and differs from an actual dimension and shape.

  In this semiconductor laser device 10, a semiconductor laser 20 is mounted on a heat sink 11 (heat dissipating part) with a fusing layer 12 p side up. The heat sink 11 is made of a material having electrical and thermal conductivity such as Cu (copper). The fusion layer 12 fixes the semiconductor laser device 10 and the heat sink 11 and is made of, for example, a fusion material including AuSn. Thereby, the heat generated from the semiconductor laser 20 is dissipated through the heat sink 11 so that the semiconductor laser 20 is maintained at an appropriate temperature.

  The semiconductor laser 20 is obtained by growing a semiconductor layer 22 made of a group III-V nitride semiconductor on a substrate 21 made of n-type GaN (gallium nitride). The semiconductor layer 22 has a laser structure in which an n-type cladding layer 23, an active layer 24, a p-type cladding layer 25, and a p-type contact layer 26 are stacked in this order. Here, the n-type cladding layer 23 corresponds to the “first conductivity type layer” of the present invention, and the p-type cladding layer 25 and the p-type contact layer 26 correspond to the “second conductivity type layer” of the present invention. Hereinafter, a direction in which the semiconductor layers are stacked is referred to as a vertical direction, a laser beam emission direction is referred to as an axial direction, and a direction perpendicular to the axial direction and the vertical direction is referred to as a horizontal direction.

  The group III-V nitride semiconductor here refers to a gallium nitride compound containing gallium (Ga) and nitrogen (N), for example, GaN, AlGaN (aluminum nitride / gallium), or AlGaInN. (Aluminum nitride, gallium, indium) and the like. These may be n-type impurities composed of group IV and group VI elements such as Si (silicon), Ge (germanium), O (oxygen), Se (selenium), or Mg (magnesium), Zn (zinc as required) ), C (carbon) and other p-type impurities composed of group II and group IV elements.

  In the semiconductor layer 22, the n-type cladding layer 23 is made of, for example, n-type AlGaN. The active layer 24 has, for example, an undoped GaInN multiple quantum well structure. The p-type cladding layer 25 is made of, for example, AlGaN, and the p-type contact layer 26 is made of, for example, p-type GaN.

  A part of the p-type cladding layer 25 and the p-type contact layer 26 are formed up to the p-type contact layer 26 as will be described later, and then selectively etched to form a band-shaped ridge portion (projection) extending in the axial direction. Strips) 27 and grooves 28 on both sides thereof. The p-type contact layer 26 is provided only on the ridge portion 27. The band-shaped structure including the ridge portion 27 and the groove portion 28 is a so-called W ridge structure, which restricts the size of the current path 29 in the semiconductor layer 22 and is based on the lateral light mode (0th order). It has the function of stably controlling the mode and guiding in the axial direction. This W ridge structure corresponds to the “current confinement structure” of the present invention.

  As described above, the grooves 28 are provided on both sides of the ridge 27 to form the W ridge structure. If the p-type cladding layer 25 is etched deeply over a wide area instead of providing the grooves 28, an electrical leak occurs. It becomes easy and inhibits mass production. Further, since the group III-V nitride semiconductor is generally a material that is difficult to etch a wide region uniformly, the ridge 27 is formed by etching the narrowest region.

An insulating film 31 is formed on the surface of the p-type cladding layer 25 including both side surfaces of the ridge portion 27 and the inner surface of the groove portion 28. That is, the insulating film 31 has an opening in a region corresponding to the upper surface of the ridge portion 27. The insulating film 31 has a structure in which, for example, SiO ₂ and Si are stacked in this order.

  A p-side contact electrode 32 is formed on the upper surface of the ridge portion 27 (the surface of the p-type contact layer 26). Here, the p-side contact electrode 32 includes, for example, pd (palladium).

  On the surfaces of the insulating film 31 and the p-side contact electrode 32, a p-side electrode 33 (first electrode) and a p-side electrode 34 (second electrode) are formed with a separation region L1 therebetween. Here, the p-side electrode 33 and the p-side electrode 34 have a structure in which Ti (titanium), Pt (platinum), and Au (gold) are stacked in this order.

The separation region L1 is a band-like region extending in the lateral direction, and is formed so as to spatially separate the p-side electrode 33 and the p-side electrode 34 in the axial direction and not electrically short-circuit each other. The p-side electrode 33 and the p-side electrode 34 are preferably insulated by 100Ω or more. In the present embodiment, the isolation region L1 removes the p-type contact layer 26 and the p-side contact electrode 32 above the ridge portion 27 to expose the p-type cladding layer 25, and covers the surface with the insulating film 31. It is formed by. Therefore, for example, the resistivity of the p-type cladding layer 25 is 1 Ω · cm, and the cross-sectional area of the separation region L1 of the p-type cladding layer 25 is 0.75 μm ² (= 1.5 μm (width) × 0.5 μm (depth). ), The width in the axial direction of the separation region L1 is 0.0075 μm (= 100Ω × 0.75 μm ² / 1Ω · cm) or more in order for the distance between the p-side electrode 33 and the p-side electrode 34 to be 100Ω or more. I know it ’s good.

  Note that at least one impurity of silicon (Si), oxygen (O), aluminum (Al), and boron (B) may be implanted into the isolation region L1. Thereby, since the resistivity in the isolation region L1 of the p-type cladding layer 25 becomes larger, the p-side electrode 33 and the p-side electrode 34 can be reliably insulated.

  The p-side electrode 34 has a structure in which Ti (titanium), Pt (platinum), and Au (gold) are stacked in this order. The p-side electrode 34 is formed on the reflection-side end face 36 side to be described later with reference to the isolation region L1 in the surfaces of the insulating film 31 and the p-side contact electrode 32. It is electrically connected via the contact electrode 32. Hereinafter, a portion of the p-side electrode 34 that is electrically connected to the p-type contact layer 26 of the ridge portion 27 is referred to as a contact portion 34A. The p-side electrode 34 is also bonded to a wire W1 made of gold or the like, and is electrically connected to an external power source (not shown) via the wire W1.

  Thus, since the p-side electrode 34 can inject current into the active layer 24 via the contact portion 34A, a region corresponding to the contact portion 34A in the active layer 24 functions as a so-called gain region L2. Here, the “function as the gain region L2” is a function of amplifying the emitted light emitted by the injected carriers.

  Similar to the p-side electrode 34, the p-side electrode 33 has a structure in which Ti (titanium), Pt (platinum), and Au (gold) are stacked in this order. The p-side electrode 33 is formed on the emission side end face 35 side described later with reference to the isolation region L1 in the surface including the surfaces of the insulating film 31 and the p-side contact electrode 32, and the p-type contact layer 26 of the ridge portion 27. Are electrically connected to each other through a p-side contact electrode 32. Hereinafter, a portion of the p-side electrode 33 that is electrically connected to the p-type contact layer 26 of the ridge portion 27 is referred to as a contact portion 33A. The p-side electrode 33 is also joined with a wire W2 made of gold or the like, and is electrically connected to an optical output arithmetic circuit (not shown) to be described later via the wire W2.

  Thus, the p-side electrode 33 can draw a current (photocurrent) from the active layer 24 through the contact portion 33A and can input the current from the active layer 24 to the optical output arithmetic circuit. Of these, the region corresponding to the contact portion 33A functions as a so-called light receiving region L3. Here, the “function as the light receiving region L3” is a function that absorbs the light emitted from the gain region L2 and converts it into a current signal, and is a function equivalent to a light detection mechanism such as a photodiode. It is. Therefore, since the semiconductor laser 20 has a light detection mechanism built in the light receiving region L3, it is not necessary to provide a light detection mechanism separately from the semiconductor laser 20.

  Note that the light detection mechanism provided in the light receiving region L3 only absorbs part of the light emitted in the semiconductor layer 22 and converts it into a current signal, so there is no possibility of deteriorating the laser characteristics. Further, self-excited oscillation (pulsation) may be generated by the interaction between the gain region L2 and the light receiving region L3.

  By the way, the optical output arithmetic circuit described above receives the current signal from the p-side electrode 33 as the optical output monitor signal, and obtains the output level of the emitted laser light using the following equation. Yes. This equation expresses the relationship between the output power Pout and the internal photon density S, but the size of the internal photon density S has a close correlation with the size of the optical output monitor signal described above. The magnitude of the output power Pout has a one-to-one correspondence with the magnitude of the optical output monitor signal.

Pout = (1/2) × (C ₀ / n _eq ) × hν × In (1 / (RfRf)) × wd × {(1-Rf) / ((1-Rf) + (1-Rr))} × S ... (1)

Here, C ₀ is the speed of light, n _eq is the transmission refractive index of the active layer 24, hν is the band gap energy of the active layer 24, W is the axial width of the ridge 27, and d is It is the thickness of the active layer 24 in the vertical direction, and Rr is the reflectance on the rear end face side.

  By the way, the contact portion 33A needs to have an area capable of generating a current amount (detectable current amount) that can be detected by the light output arithmetic circuit described above. Therefore, the length of the contact portion 33A in the axial direction is extremely shorter than the length of the contact portion 34A in the axial direction (for example, 380 μm), for example, about 10 μm.

  Further, since the contact portion 33A only needs to be in a region sandwiched between resonators composed of an emission side end surface 35 and a reflection side end surface 36, which will be described later, the contact portion 33A is formed so as to correspond to any portion above the ridge portion 27. However, as in the present embodiment, it is preferable that the ridge portion 27 is formed so as to correspond to the emission side end face 35 side. As shown in FIG. 4, since the internal photon density S is maximized in the vicinity of the emission side end face 35, a sufficient amount of current can be ensured without excessively increasing the area of the contact portion 33A. is there. In addition, since the heat generation in the light receiving region L3 is very small, if the light receiving region L3 is provided on the emission side end surface 35 side, the end surface of the emission side end surface 35 is deteriorated without providing a heat dissipation mechanism near the emission side end surface 35. This is because it can be suppressed.

A pair of emission-side end surfaces 35 and reflection-side end surfaces 36 are formed on the side surfaces perpendicular to the extending direction (axial direction) of the ridge portion 27. The emission side end face 35 is made of, for example, Al ₂ O ₃ (aluminum oxide) and is adjusted to have a low reflectance. On the other hand, the reflection-side end surface 36 is configured by alternately laminating aluminum oxide layers and titanium oxide layers, for example, and is adjusted to have a high reflectance. Thereby, the light generated in the gain region of the active layer 24 is amplified by reciprocating between the pair of emission side end faces 35 and the reflection side end face 36, and is emitted as a beam from the emission side end face 35.

  On the other hand, an n-side electrode 37 is provided on the entire rear surface of the substrate 21 and is electrically connected to the substrate 21 and the n-type cladding layer 23. The n-side electrode 37 has a structure in which, for example, Ti, Pt, and Au are laminated in this order. Since the n-side electrode 37 is electrically connected to the heat sink 11 when the semiconductor laser 20 is mounted on the heat sink 11, the n-side electrode 37 has the same potential (zero volt) as ground (not shown) electrically connected to the heat sink 11. )It has become.

  The semiconductor laser device 10 can be manufactured as follows.

5 to 9 show the manufacturing method in the order of steps. In order to manufacture the semiconductor laser 20, a semiconductor layer 22A made of a group III-V nitride (GaN compound semiconductor) is formed on a substrate 21A made of GaN, for example, MOCVD (Metal Organic Chemical Vapor Deposition). (Growth) method. At this time, for example, trimethylaluminum (TMA), trimethylgallium (TMG), trimethylindium (TMIn), and ammonia (NH ₃ ) are used as raw materials for the GaN-based compound semiconductor, and as donor raw materials, for example, monosilane. (SiH ₄ ) is used, and for example, cyclopentadienyl magnesium (CPMg) is used as the acceptor impurity material.

  Specifically, first, an n-type cladding layer 23A, an active layer 24A, a p-type cladding layer 25A, and a p-type contact layer 26A are stacked in this order on the substrate 21A (see FIG. 5A).

Next, an insulating film 31A made of SiO ₂ having a thickness of 0.2 μm is formed on the p-type contact layer 26A. Next, a photoresist is formed on the insulating film 31A, and a photoresist layer R1 having a strip-like opening extending in the axial direction is formed based on the photolithography technique. Subsequently, using the photoresist layer R1 as a mask, the insulating film 31A is selectively removed by a wet etching method using a hydrofluoric acid-based etchant (see FIG. 5B). Thereafter, a metal layer having a thickness of 100 nm containing Pd is formed by a vacuum deposition method. Thereafter, the photoresist layer R1 is removed. Thereby, the p-side contact electrode 32A is formed (see FIG. 5C).

Next, a photoresist is formed on the p-side contact electrode 32A and the insulating film 31A, and a photoresist layer R2 having an opening in a region where a W ridge structure is to be formed is formed based on the photolithography technique ( (See FIG. 6A). Next, the insulating film 31A is selectively removed by a wet etching method using a hydrofluoric acid-based etching solution using the photoresist layer R2 and the p-side contact electrode 32A as a mask. Then, selectively removing portions of the p-type contact layer 26A and the p-type cladding layer 25A by a dry etching method using a chlorine-based etching gas (see FIG. 6 (B)). Thereafter, the photoresist layer R2 is removed, and a portion of the p-type contact layer 26A that is not covered with the p-side contact electrode 32A is removed. As a result, a W ridge structure including the band-shaped ridge portion 27 and the groove portion 28 is formed on the semiconductor layer 22A.

  Next, a photoresist is formed over the entire surface, and a photoresist layer R3 having an opening in a region corresponding to the separation region L1 is formed based on a photolithography technique (see FIG. 7A). Subsequently, using the photoresist layer R3 as a mask, the p-side contact electrode 32A is selectively removed by ion milling to expose the upper surface of the p-type contact layer 26A, and then dry using a chlorine-based etching gas. The p-type contact layer 26A is selectively removed by an etching method. Thereafter, the photoresist layer R3 is removed. Thus, a region to be the isolation region L1 is formed, and the p-type contact layer 26 and the p-side contact electrode 32 are formed on the upper surface excluding the portion to be the isolation region L1 (see FIG. 7B).

Next, an insulating layer 31B made of SiO ₂ having a thickness of 0.2 μm is formed over the entire surface. Subsequently, after forming a photoresist so that the upper side of the p-side contact electrode 32 is thin and the upper side of the other region is thick, that is, the entire surface is flat, the p-side contact electrode 32 is formed on the p-side based on the photolithography technique. A photoresist layer R4 having an opening in a region corresponding to the upper surface of the contact electrode 32 is formed (see FIG. 8A). Next, using the p-side contact electrode 32 as an etching stop layer, the insulating layer 31B on the p-side contact electrode 32 is etched to expose the p-side contact electrode 32 (see FIG. 8B).

  Next, a photoresist is formed over the entire surface, and a photoresist layer (not shown) is formed on the region corresponding to the separation region L1 based on the photolithography technique. Subsequently, Ti, Pt, and Au are laminated in this order using, for example, a vapor deposition device. Thereafter, the photoresist layer is removed. Thereby, the p-side electrode 33 is formed on the emission side end face 35 side, and the p-side electrode 34 is formed on the reflection side end face 36 side (see FIG. 9).

  Next, the back surface of the substrate 21A is polished as necessary, and Ti, Pt, and Au are stacked in this order on the surface. Thereby, the n-side electrode 37 is formed. Further, the substrate 21A is diced for each element (semiconductor laser 20). In this way, the semiconductor laser 20 is manufactured. Further, the semiconductor laser device 10 is manufactured by connecting the wire W on the p-side electrode 34 and joining the heat sink 11 to the n-side electrode 37 via the fusion layer 12 (see FIG. 1).

  In this semiconductor laser 20, when a voltage having a predetermined potential difference is applied between the p-side electrode 34 and the n-side electrode 37, the current confined by the ridge portion 27 causes the gain region L 2 (light emission) of the active layer 24. This causes light emission due to recombination of electrons and holes. This light is reflected by the pair of reflecting mirror films, causes laser oscillation at a wavelength at which the phase change when reciprocating once is an integral multiple of 2π, and is emitted to the outside as a beam.

  At this time, since the p-side electrode 33 is electrically connected to the light output arithmetic circuit via the wire W2, the emitted light emitted from the gain region L2 is received corresponding to the p-side electrode 33 in the active layer 24. It is absorbed in the region L3 and converted into a current signal (photocurrent). This current signal is output to the optical output arithmetic circuit via the wire W2. The current signal from the p-side electrode 33 is received as a light output monitor signal in the light output calculation circuit, and the output level of the emitted laser light is calculated using the above-described equation (1). As described above, since the semiconductor laser 20 includes the light detection mechanism in the light receiving region L <b> 3, it is not necessary to provide the light detection mechanism separately from the semiconductor laser 20.

  As described above, according to the semiconductor laser device of the present embodiment, the light receiving region L3 is provided in the region corresponding to the p-side electrode 33, and a part of the light emitted in the semiconductor layer 22 is absorbed to be an optical output monitor signal. Since the conversion is performed, it is possible to extract a current signal having a correlation with the output level of the emitted laser light, and it is not necessary to provide a light detection mechanism such as a photodiode separately from the semiconductor laser 20. . Thereby, a laser beam can be detected with a simple configuration.

[Second Embodiment]
FIG. 10 shows the structure of a semiconductor laser device according to the second embodiment of the present invention. FIG. 11 shows a cross-sectional configuration in the direction of arrow CC in FIG. 10 and 11 are schematically shown and are different from actual dimensions and shapes.

  In the semiconductor laser device according to the second embodiment, the semiconductor laser 50 is mounted on the heat sink 11 (heat dissipating part) with the fusing layer 12 p-side up. This semiconductor laser 50 is a semiconductor having a light receiving region L3 in a part of a region corresponding to a predetermined region of the ridge 27 in that the light receiving region L6 is provided in a region corresponding to a part (strip-shaped region) of the groove 28. Mainly different from the laser 20. Therefore, hereinafter, the above differences will be mainly described in detail, and description of the same configurations, operations, and effects as those in the above embodiment will be appropriately omitted.

An insulating film 61 is formed on the side surface of the groove portion 28 (excluding the side surface side of the ridge portion 27) and the surface of the p-type cladding layer 25 other than the groove portion 28. That is, the insulating film 61 has openings in a region corresponding to the ridge portion 27 and a region corresponding to the bottom surface of the groove portion 28. For example, the insulating film 61 has a structure in which SiO ₂ and Si are laminated in this order.

  A p-side electrode 53 (53a, 53b) (first electrode) is formed on a part of the bottom surface of the groove 28 (p-type cladding layer 25) and the surface of the insulating film 61, respectively. The p-side electrode 53 (53a, 53b) has a structure in which Ti (titanium), Pt (platinum), and Au (gold) are stacked in this order. The p-side electrode 53a is formed on one side with respect to the ridge 27, and the p-side electrode 53b is formed on the other side with respect to the ridge 27. Thus, the p-side electrode 53 (53a, 53b) is electrically connected to a part of the bottom surface of the groove 28 (p-type cladding layer 25). Hereinafter, the portion of the p-side electrode 53a that is electrically connected to the p-type cladding layer 25 of the groove 28 is electrically connected to the contact portion 53A, and the p-side electrode 53b is electrically connected to the p-type cladding layer 25 of the groove 28. These portions are referred to as contact portions 53B. The p-side electrode 53 (53a, 53b) is also joined with a wire W4 made of gold or the like, and an optical output arithmetic circuit (not shown) similar to that of the first embodiment is connected via the wire W4. It is designed to be electrically connected.

  Thus, the p-side electrode 53 (53a, 53b) draws current (photocurrent) from the active layer 24 through the contact portions 53A, 53B, and inputs the current from the active layer 24 to the optical output arithmetic circuit. Therefore, the region corresponding to the contact portions 53A and 53B in the active layer 24 functions as a so-called light receiving region L6. Here, the “function as the light receiving region L6” is a function that absorbs light emitted from the gain region L4, which will be described later, and converts it into a current signal. For example, a function equivalent to a light detection mechanism such as a photodiode. That is. Therefore, since the semiconductor laser 50 incorporates the light detection mechanism in the light receiving region L6, it is not necessary to provide a light detection mechanism separately from the semiconductor laser 50.

  Incidentally, the contact portions 53A and 53B are required to have an area capable of generating a current amount (detectable current amount) that can be detected by the light output arithmetic circuit. Further, since the contact portions 53A and 53B only need to be in a region sandwiched between the resonators including the emission side end surface 35 and the reflection side end surface 36, they are formed corresponding to any part of the bottom surface of the groove 28. However, as in the present embodiment, it is preferably formed corresponding to the region including the region on the emission side end surface 35 side in the bottom surface of the groove portion 28. As shown in FIG. 4, since the internal photon density S is maximized in the vicinity of the emission side end face 35, a sufficient amount of current can be secured without excessively increasing the areas of the contact portions 53A and 53B. Because.

  Note that the light detection mechanism provided in the light receiving region L6 only absorbs part of the light emitted in the semiconductor layer 22 and converts it into a current signal, so there is no possibility of deteriorating the laser characteristics. Further, self-excited oscillation (pulsation) may occur due to the interaction between the gain region L4 and the light receiving region L6.

Both side surfaces of the ridge portion 27, part of the bottom surface of the groove portion 28 (portions of the p-type cladding layer 25 corresponding to the region between the side of the ridge portion 28 and the p-side electrode 53 (53a, 53b)), and p An insulating film 71 is formed on the surface of the side electrode 53 (53a, 53b). That is, the insulating film 71 has an opening in a region corresponding to the upper surface (p-side contact electrode 32) of the ridge portion 27. For example, the insulating film 71 has a structure in which SiO ₂ and Si are laminated in this order.

A p-side electrode 54 (first electrode) is formed on each surface of the p-side contact electrode 32 and the insulating film 71. The p-side electrode 54 has a structure in which Ti (titanium), Pt (platinum), and Au (gold) are laminated in this order, and the p-type contact layer 26 of the ridge portion 27 is interposed via the p-side contact electrode 32. Electrically connected. Hereinafter, a portion of the p-side electrode 54 that is electrically connected to the p-type contact layer 26 of the ridge portion 27 is referred to as a contact portion 54A. The p-side electrode 54 is also joined to a wire W3 made of gold or the like, and is electrically connected to an external power source (not shown) via the wire W3.

  Thus, since the p-side electrode 54 can inject current into the active layer 24 via the contact portion 54A, a region of the active layer 24 corresponding to the contact portion 54A functions as a so-called gain region L4. Here, the “function as the gain region L4” is a function of amplifying the emitted light emitted by the injected carriers.

A high resistance region L7 is formed in a portion of the p-type cladding layer 25 corresponding to a part of the groove portion 28 (region between the side of the ridge portion 27 and the p-side electrode 53 (53a, 53b)). The high resistance region L7 is formed on the p-type cladding layer 25 from the bottom surface side of the groove portion 28, for example, at least one selected from the group consisting of silicon (Si), aluminum (Al), oxygen (O), and boron (B). It is formed by implanting an impurity containing. Thereby, the current injected from the p-side electrode 54 into the active layer 24 and the current (photocurrent) converted in the light receiving region L6 can be separated. As a result, a part of the current (photocurrent) converted in the light receiving region L6 leaks to the ridge 27 side, or a part of the current injected from the p-side electrode 54 to the active layer 24 becomes the p-side electrode 53 (53a). , 53b), the loss of current (photocurrent) converted in the light receiving region L6 can be suppressed, and current mixing from the ridge portion 28 side can be suppressed. .

  The semiconductor laser 50 can be manufactured as follows. In addition, the description which overlaps with the manufacturing method of the semiconductor laser apparatus 20 is abbreviate | omitted.

Following the step shown in FIG. 6B, Si is laminated to form an insulating film 61A (FIG. 12A). After that, the bottom of the groove 28 and forming a photoresist film R5 having an opening in a portion corresponding to the side surface of the ridge portion 27, for example, BHF solution to remove the exposed portions of the insulation Enmaku 61A by wet etching by An insulating film 61 is formed by exposing a part of the side surface of the ridge 27 and the bottom of the groove 28 (see FIG. 12B) . Thereafter, remove the photoresist film R5.

Next, after forming a photoresist film R6 having an opening in a region having a width of, for example, 1 μm from the side of the ridge 27 on the insulating film 61A, a part of the bottom of the groove 28 and the upper surface of the p-side contact electrode 32, the exposed groove The high resistance region L7 is formed by implanting the above-described ions from the top surface of the bottom portion 28 (p-type cladding layer 25A) (see FIG. 12C) . Thereafter, remove the photoresist film R6.

Next, the upper surface side and p-side contact electrode 32 and the high resistance region L7 of the ridge portion 27 to form a photoresist film R7, for example, a metal by laminating respective materials described above by CVD in the same thickness multilayer A film 53D is formed (see FIG. 13A). After that, it formed p-side electrode 53a, and 53b by removing the photoresist film R7 by a lift-off method.

Next, the insulating film 71A is formed by, for example, depositing Si and SiO ₂ on the upper surfaces of the p-side contact electrode 32, the high resistance region L7, and the p-side electrodes 53a and 53b and the side surfaces of the ridge portion 27 by using, for example, vapor deposition. (See FIG. 13B).

Next, both end surfaces facing laterally from (both end surfaces), for example, after forming a photoresist film R8 on the upper surface of 100μm inner insulating film 71A, for example, insulation Enmaku 71A using a wet etching method using BHF solution p-side electrode 53a of the exposed portion of the removed, exposing a portion of the upper surface of 53b (see FIG. 14 (a)). Thereafter, the photoresist film R8 is removed.

Next, the insulating film 71 is formed by removing a portion of the insulating film 71A corresponding to the upper surface of the p-side contact electrode 32 using, for example, a self-alignment process (see FIG. 14B).

Then, p-side electrodes 53a, after forming a photoresist film R9 on the upper surface of the exposed portion of the 53b, the same thickness of each material described above with reference to the upper surface of the p-side contact electrode 32 and the insulating film 71 such as CVD method is Then, the p-side electrode 54 is formed (see FIG. 15). Thereafter, the photoresist film R9 is removed to complete the semiconductor laser (FIG. 11). Thereafter, the semiconductor laser device shown in FIG. 10 is completed through steps similar to those in the above embodiment.

  The semiconductor laser device of this embodiment also emits a laser in the same manner as in the above embodiment. At this time, since the p-side electrode 33 is electrically connected to the optical output arithmetic circuit via the wire W4, the emitted light emitted from the gain region L4 is received corresponding to the p-side electrode 53 in the active layer 24. It is absorbed in the region L6 and converted into a current signal (photocurrent). This current signal is output to the optical output arithmetic circuit via the wire W3. The current signal from the p-side electrode 53 is received as an optical output monitor signal in the optical output arithmetic circuit, and the magnitude of the output of the emitted laser light is calculated using the above equation (1). Thus, since the semiconductor laser 50 incorporates the light detection mechanism in the light receiving region L6, it is not necessary to provide the light detection mechanism separately from the semiconductor laser 50.

  Thus, according to the semiconductor laser device of the present embodiment, the light receiving region L6 is provided in the region corresponding to the p-side electrode 53, and a part of the light emitted in the semiconductor layer 22 is absorbed and used as the optical output monitor signal. Since the conversion is performed, it is possible to extract a current signal having a correlation with the output level of the emitted laser light, and it is not necessary to provide a light detection mechanism such as a photodiode separately from the semiconductor laser 50. . Thereby, a laser beam can be detected with a simple configuration.

  While the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and various modifications can be made.

  For example, in the above-described embodiment, the case where the semiconductor layer 22 is made of a group III-V nitride semiconductor has been described. However, a GaInP-based (red) material or an AlGaAs-based (infrared) semiconductor is used. It may be configured.

  In the above embodiment, the index guide type current confinement structure (W ridge structure) is provided on the upper portion of the semiconductor layer 22. However, other current confinement structures such as a gain guide type may be used.

  In the above embodiment, the upper part of the semiconductor layer 22 is p-type and the lower part is n-type. However, the opposite polarity may be used.

  Further, the present invention is not limited to the manufacturing method specifically described in the above embodiment, and may be another manufacturing method.

  Moreover, although the case where the semiconductor lasers 20 and 50 are mounted p-side up has been described in the above embodiment, they may be mounted p-side down. Mounting with p-side down is preferable because heat dissipation efficiency and laser characteristics can be improved as compared with mounting with p-side up.

  In the second embodiment, the case where the high resistance region L7 is provided has been described. Instead of providing the high resistance region L7, the distance between the active layer 24 and the bottom of the trench 28 is reduced (thinned). Alternatively, the active layer 24 may be exposed so that the active layer 24 is not damaged, and the insulating film 71 may be extended to the upper surface thereof.

1 is a perspective view illustrating a configuration of a semiconductor laser according to a first embodiment of the present invention. It is sectional drawing along the AA cutting line of FIG. It is sectional drawing along the BB cutting line of FIG. It is a characteristic view showing the relationship between a resonator direction and internal photon density. FIG. 7 is a cross-sectional view for explaining a manufacturing step of the semiconductor laser shown in FIG. 1. FIG. 6 is a cross-sectional view illustrating a process following FIG. 5. FIG. 7 is a cross-sectional view illustrating a process following FIG. 6. FIG. 8 is a cross-sectional diagram illustrating a process following the process in FIG. 7. FIG. 9 is a cross-sectional diagram illustrating a process following the process in FIG. 8. It is a perspective view showing the structure of the semiconductor laser apparatus which concerns on the 2nd Embodiment of this invention. FIG. 12 is a cross-sectional view taken along the line CC in FIG. 11. FIG. 11 is a cross-sectional view for illustrating a manufacturing step of the semiconductor laser device shown in FIG. 10. FIG. 13 is a cross-sectional diagram illustrating a process following the process in FIG. 12. FIG. 14 is a cross-sectional diagram illustrating a process following the process in FIG. 13. FIG. 15 is a cross-sectional view illustrating a process following FIG. 14.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Semiconductor laser apparatus, 11 ... Heat sink, 12 ... Fusion layer, 20, 50 ... Semiconductor laser, 21, 21A ... Substrate, 22, 22A ... Semiconductor layer, 23, 23A ... N-type clad layer, 24, 24A ... Active Layer, 25, 25A ... p-type cladding layer, 26, 26A ... p-type contact layer, 27 ... ridge portion, 28 ... groove portion, 29 ... current path, 31, 31A, 31B, 61, 61A, 71, 71A ... insulating film 32, 32A ... p-side contact electrode, 33, 34, 53a, 53b, 54 ... p-side electrode, 33A, 34A, 53A, 53B, 54A ... contact part, 35 ... emission side end face, 36 ... reflection side end face, 37 ... n-side electrode, L1 ... isolation region, L2, L4 ... gain region, L3, L6 ... light receiving region, L7 ... high resistance region, R1-R9 ... photoresist film, W1-W4 ... wire

Claims (7)

A first conductive type layer, an active layer, and a semiconductor layer formed by laminating a second conductive type layer including a stripe-shaped current confinement structure thereon in this order; and the semiconductor layer formed on the second conductive type layer side. And a plurality of electrodes electrically connected to the second conductivity type layer at a predetermined interval from each other,
The semiconductor layer of the active layer, a corresponding region of at least one electrode (first electrode), except for the plurality of electrodes, the absorbed current signal part of the light emitted in the active layer Having a light receiving area to convert,
The plurality of electrodes are arranged in a direction perpendicular to an extending direction of the current confinement structure. The first electrode is formed in at least one of the stripe-shaped regions on both sides separated from the current confinement structure by a predetermined distance;
2. The semiconductor laser device according to claim 1, wherein an electrode other than the first electrode (second electrode) is formed in a region including a stripe-shaped region corresponding to the current confinement structure. The first electrode is electrically connected to at least one of the stripe-shaped regions on both sides of the second conductivity type layer separated from the current confinement structure by a predetermined distance;
The electrode (second electrode) other than the first electrode is electrically connected to a stripe-shaped region corresponding to the current confinement structure in the second conductivity type layer. The semiconductor laser device described. The semiconductor layer is a semiconductor laser device according to any one of claims 1 to 3, characterized in that composed of nitride III-V compound semiconductor. The second conductive type layer includes the light receiving region between the light receiving region and a region (gain region) electrically connected to the second conductive type layer among electrodes adjacent to the first electrode. and the semiconductor laser device according to any one of claims 1 to 3, characterized in that it has a high resistance region for insulating said gain region. The semiconductor laser device according to claim 5 , wherein the high resistance region contains an impurity. The semiconductor laser device according to claim 6 , wherein the impurity is at least one of silicon (Si), oxygen (O), aluminum (Al), and boron (B).

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