JP4404674B2 - Thin film manufacturing equipment - Google Patents

Description

The present invention relates to a thin film production equipment, in particular by contacting the heated catalyst to the reaction gas by activating, to reach the film forming gas consisting of the reaction gas and the material gas is the activation in the reaction chamber of the substrate It relates to thin film fabrication equipment for forming a thin film by.

  In recent years, among thin-film manufacturing apparatuses using chemical vapor deposition, an apparatus using a catalyst body (catalyst CVD apparatus) as an apparatus for manufacturing a thin film suitable for a semiconductor device that requires high integration and high functionality. Is attracting attention. This catalytic CVD apparatus is activated by bringing a reaction gas into contact with a heated catalyst body, and causing a film forming gas composed of the activated reaction gas and source gas to reach a substrate held in a reaction chamber. An apparatus for forming a thin film. Therefore, it is not necessary to heat the substrate by introducing the reaction gas activated by the heated catalyst body into the reaction chamber as compared with the thermal CVD apparatus that causes the reaction only by the heat of the substrate, and the temperature of the substrate. Is excellent in that the substrate is not damaged by the plasma, which is a problem in the plasma CVD apparatus.

  However, even when this catalyst CVD apparatus is used, there is a problem that the substrate is heated by the radiation of the heated catalyst and the temperature of the substrate rises.

  Therefore, conventionally, as a method and apparatus for solving this problem, there is a method and apparatus for providing a shutter at an optically shielded position between the catalyst body and the substrate until the catalyst body is maintained at a predetermined high temperature. (For example, refer patent document 1).

  In addition, a device is also proposed in which a catalyst body is arranged in the internal space of the catalyst body storage container in the reaction chamber and the radiation from the catalyst body to the substrate is shielded by a surface facing the substrate of the catalyst body storage container, that is, a shower plate. (For example, refer to Patent Document 2).

  By the way, in the reaction chamber, the introduced reaction gas comes into contact with the heated catalyst body to form a film, but when the substrate is carried in and out, the introduction of the film formation gas is stopped and the heating of the catalyst body is stopped. For this reason, a change in gas amount and a change in catalyst body temperature occur immediately after restarting the film forming process after carrying in and out the substrate.

  Furthermore, even if heating of the catalyst body during carry-in and carry-out is continued and the change in the temperature of the catalyst body is reduced, there is a difference in the pressure during film formation and during carry-in and carry-out, and the amount of heat lost by the catalyst body is different. Therefore, the temperature of the catalyst body changes due to the change in pressure (gas amount).

  The catalyst body is manufactured, for example, by sintering tungsten powder and compression molding with a metal compressor. At this time, heavy metals such as iron and nickel existing on the compressor surface are also mixed into the catalyst body. This heavy metal evaporates in the course of heating the catalyst body to a high temperature, and at the initial stage of the introduction of the film forming gas, it reaches the substrate and is taken into the thin film, thereby hindering the formation of a stable thin film. It was.

  Therefore, conventionally, in order to solve this problem, the catalyst body temperature before introducing the reaction gas is maintained at a temperature higher than the temperature to be maintained at the time of film formation, and heavy metal is released before the film formation, There has been proposed an apparatus configured to suppress the mixing of the heavy metal into the thin film during film formation (see, for example, Patent Document 3).

  In the catalyst body CVD apparatus, a catalyst body is disposed in a reaction chamber. Therefore, the part where the temperature was slightly lowered in the vicinity of the electrode part (power supply source) for heating the catalyst body was exposed to the source gas.

  For example, when a silicon film is formed, a mixed gas of silane and hydrogen is used as a source gas, but the catalyst body may react with the silane of the source gas to generate a silicon compound (silicidation). This silicidation proceeds from the portion where the temperature is low, where the source gas cannot be blown off from the surface instantaneously by heat. As a result, there is a disadvantage that the resistance value of the catalyst body is lowered or a particle generation source is obtained.

Therefore, conventionally, a gap is provided between the portion where the temperature is lowered and the portion where the temperature is lowered is covered with a cover formed so as not to contact the catalyst body. For example, when forming the silicon film, a hydrogen gas is introduced into the cover and introduced into the reaction chamber via the cover, and the gas purge prevents the silane gas from entering the cover by the hydrogen gas. An apparatus provided with a mechanism has been proposed (see, for example, Patent Document 4).
JP-A 2000-299313 (claim 1) JP-A-11-54441 (claim 1) JP-A-2000-277501 (claim 1) JP-A-2002-93723 (claim 1)

  However, even though the shutter and the shower plate can prevent the radiation of the catalyst body, there has been a problem that the raw material gas comes into contact with the catalyst body and generates particles.

  In addition, by maintaining the temperature of the catalyst body higher than that at the time of film formation before introducing the raw material gas, even if the decrease in the temperature of the catalyst body at the time of film formation can be suppressed to a certain value or less, the catalyst body temperature changes. In the end, the change in the temperature of the catalyst body hindered the formation of a stable thin film.

  The above gas purge mechanism is effective to prevent silicidation in the part where the temperature is slightly lowered near the electrode part (power supply source) for heating the catalyst body. However, as many gas purge mechanisms as the number of electrodes are required. In addition, when there are a plurality of electrodes, a distribution mechanism that evenly distributes the purge gas to each cover is required, which has the disadvantage that the apparatus becomes complicated.

  That is, the occurrence of each of the above problems is caused by the catalyst body being provided in the same reaction chamber as the substrate and exposed to the source gas.

The present invention has been made in view of the above problems, it prevents the radiation to the substrate of the catalyst body, even if the temperature changes in the catalyst body to provide a thin film production equipment of simple mechanism that does not affect the film This is the issue.

In order to solve the above problem, thin-film manufacturing equipment according to the present invention comprises contacting a reactant gas to the heated catalyst by activating, by a deposition gas comprising the reaction gas and the material gas is the activation, In a thin film manufacturing apparatus including a reaction chamber for performing a film formation process on a substrate, a catalyst body storage container provided with a reaction gas supply system and a catalyst gas storage system provided independently of the catalyst body storage container are provided. a reaction chamber with an active gas supply system further comprises an exhaust system for exhausting excess deposition gas and the reaction by-product gases from said reaction chamber, said catalyst container and the reaction chamber and the exhaust system and Are connected to each other through a three-way valve, and the internal space of the catalyst body storage container is formed so as to gradually narrow toward the outlet of the reaction gas, and the catalyst body is disposed at a place where the space is gradually narrowed. characterized in that it was To.

According to this configuration, the catalyst body storage container in which the catalyst body is stored and the reaction chamber are separately provided by the valve, so that a thin film can be formed without contacting the heated catalyst body and the source gas. Can do. In addition, the internal space of the catalyst body storage container is formed so as to be gradually narrowed toward the outlet of the reaction gas, and the catalyst body is disposed at the portion formed so as to be gradually narrowed. The medium can be contacted with high frequency.

A material that reduces the deactivation of the activated gas from the catalyst body storage container to the reaction gas introduction port of the reaction chamber through a valve or a three-way valve, such as quartz, high purity Al ₂ O ₃ It is desirable to be made of a material such as a purity ceramic.

  In order to suppress the temperature change of the catalyst body in the catalyst body storage container and make the catalyst body stand by at an appropriate temperature, the temperature change is detected and converted into a signal, and this signal is fed back to the control computer to heat the catalyst body. The power can also be adjusted.

  Further, in order to suppress the pressure change in the catalyst body storage container, the pressure control device senses the pressure change and converts the signal, and feeds back this signal to the control computer to correct the pressure abnormality in the catalyst body storage container. It can also be monitored.

  In order to introduce the reaction gas, source gas, and inert gas into the reaction chamber alone or mixed at a predetermined flow rate, or to introduce them into the reaction chamber with a time difference, the source gas supply system, the reaction gas supply system, and the inert gas A gas flow control device is connected to the gas supply system, and each gas supply system is also connected to a gas supply system other than itself to form a mixed gas supply system. Each mixed gas supply system is also a gas flow control device. What is necessary is just to comprise so that a gas flow rate can be controlled.

  Therefore, for example, in order to connect the source gas supply system and the inert gas supply system to form the mixed gas supply system, and supply the source gas and the inert gas alone or mixed to the reaction chamber A gas flow rate control device may be connected to the mixed gas supply system.

  In order to connect the reaction gas supply system and the inert gas supply system to form the mixed gas supply system, and supply the reaction gas and the inert gas alone or mixed to the catalyst body storage container A gas flow rate control device may be connected to the mixed gas supply system.

  When supplying the reaction gas activated from the reaction gas supply system to the reaction chamber via the catalyst container, the reaction gas and at least one of the raw material gas and the inert gas are provided with a time difference and supplied simultaneously. You may make it not.

  As is clear from the above description, the thin film manufacturing apparatus and the thin film manufacturing method according to the present invention store the catalyst body in the catalyst body storage container and are independent of the reaction chamber, so that the substrate is generated by the radiation of the heated catalyst body. Is no longer heated, and a stable thin film can be formed.

  Also, by storing the catalyst body in the catalyst body storage container and making it independent of the reaction chamber, the source gas can be introduced into the reaction chamber without contacting the catalyst body, so that the catalyst body and the source gas are in contact with each other. It is now possible to suppress the generation of particles.

  Since the reaction gas can be introduced into the reaction chamber at a substantially constant temperature and a constant pressure from the initial stage to the final stage of the film formation process, a stable thin film can be formed.

By configuring the catalyst body storage container and valve using a material that reduces deactivation, such as quartz, high-purity Al ₂ O ₃ high-purity ceramic, and the like, the activated reaction gas can efficiently reach the substrate. Can now.

  In addition, a gas flow rate control device is connected to the source gas supply system, the reaction gas supply system, and the inert gas supply system, and the above gas supply systems are also connected to other gas supply systems to form a mixed gas supply system. By connecting a gas flow rate control device to each mixed gas supply system, it is possible to introduce the optimally activated gas into the reaction chamber at a predetermined timing. Mass production is now possible.

  Referring to FIG. 1, reference numeral 1 denotes a reaction chamber of a thin film manufacturing apparatus according to the present invention. In the reaction chamber 1, a shower head 2 is provided on the upper surface of the inner wall for allowing the gas to uniformly reach the substrate. In the reaction chamber 1, there is a substrate holder 3 at a position facing the shower head 2. For the thin film, the substrate is placed on the substrate holder 3 by a carry-in device (not shown), the raw material gas is introduced into the reaction chamber 1 from the raw material gas supply system 4 through the valve 41, and passes through the shower head 2. The raw material gas is made to reach the substrate. An inert gas is also introduced into the reaction chamber 1 from the inert gas supply system 5 through the valve 51.

  Examples of the source gas generation method include a method of gasifying a solid or liquid organometallic material. That is, when the organometallic material is a solid, there are a method of heating and liquefying the solid and then sending it to a vaporizer, a method of sending it to a bubbling system and foaming, and a method of sublimating the solid directly. In the case of a liquid, there are a method of sending a liquid to a vaporizer and a method of sending it to a bubbling system and a method of foaming.

  When the reaction gas is introduced into the reaction chamber 1 from the reaction gas supply system 6 via the valve 61, it is necessary to contact a catalyst body (not shown) heated by a power source or the like in order to activate the reaction gas. . However, when the catalyst body is heated inside the reaction chamber 1, the substrate is heated by the radiation of the heated catalyst body, causing problems such as inhibiting the production of a stable thin film.

  Therefore, in order to install the catalyst body independently from the reaction chamber 1, the catalyst body storage container 7 is provided, the catalyst body storage container 7 and the reaction chamber 1 are connected by the reaction gas supply path 62, and the reaction gas supply path is provided. The valve 61 may be interposed in 71. With such a configuration, the heat of the heated catalyst body does not reach the substrate, and the catalyst body does not come into contact with the raw material gas, so that a stable thin film can be manufactured.

  At the time of loading / unloading the substrate, the introduction of the gas into the reaction chamber 1 must be stopped and the by-products and surplus gas must be exhausted. Therefore, these gases are exhausted from the reaction chamber 1 to the exhaust system 9 via the pressure adjustment valve 8. At this time, in the reaction chamber 1, the gas amount and pressure change, and the catalyst body temperature in the catalyst body storage container 7 also changes. If the temperature of the catalyst body changes, it will hinder stable film formation. Therefore, when the catalyst body storage container 7 and the exhaust system 9 are connected by the gas exhaust path 64 and the valve 63 is interposed to exhaust the by-product and excess gas in the reaction chamber 1, the valve 61 is closed and the valve 61 is closed. 63 can be opened. With this configuration, the exhaust of by-products and excess gas in the reaction chamber 1 does not affect the catalyst body temperature in the catalyst body storage container 7.

  By the way, as described above, since the introduction of gas into the reaction chamber 1 is stopped at the time of loading / unloading the substrate, the change in gas amount and the catalyst body temperature immediately after restarting the film formation after loading / unloading the substrate. Changes, which hinders the production of a stable thin film.

  Therefore, a temperature adjustment device (not shown) for adjusting the electric power for heating the catalyst body by sensing the temperature change in the catalyst body storage container 7 and converting the signal and feeding back this signal to the control computer, and the catalyst body storage container 7 is provided with a pressure control device (not shown) for detecting a pressure change in the catalyst body container 7 by sensing a pressure change in the body 7 and converting the signal and feeding back this signal to a control computer. The amount of gas in the storage container 7 and the temperature of the catalyst body are maintained in an optimum state so that the reaction gas activated from the initial stage of film formation can be stably supplied. In this case, a viewing window (not shown) may be provided in the catalyst body container 7 for monitoring.

  That is, the valve 61 interposed between the reaction gas supply path 62 connecting the catalyst body storage container 7 and the reaction chamber 1 when loading / unloading the substrate is closed, and the reaction gas supply system 6 is placed in the catalyst body storage container 7. The reaction gas is introduced into the reaction chamber 1 and the optimum state is maintained by using the temperature adjusting device and the pressure control device. After a new substrate is loaded, the valve 61 is opened to immediately activate the activated reaction gas in the reaction chamber 1. Can be introduced.

  FIG. 2 is an example in which a mixed gas supply system is configured by connecting an inert gas supply system 5 and a reaction gas supply system 6.

  The reaction gas supply system 6 is connected to the catalyst body storage container 7 via a gas flow rate control device 601 from a reaction gas supply port. The inert gas supply system 5 is connected to the reaction chamber 1 through a gas flow rate controller 501 from an inert gas supply port. Further, by providing a branch from the inert gas supply port and connecting to the reaction gas supply system 6 via the gas flow rate control device 602, a mixed gas supply system of the reaction gas and the inert gas is configured, and the catalyst body is accommodated. It is connected to the container 7. A vent gas path 502 is provided between the gas flow control device 501 and the inert gas supply system 5, and a valve attached to the vent gas path 502 is opened, so that the particle flow is reduced by the down flow from the shower head 2. The reaction chamber 1 can be vented while preventing soaring.

  In FIG. 1, the inert gas supply system 5 is connected only to the reaction chamber 1. However, in FIG. 2, as described above, the inert gas supply system 5 together with the reaction gas supply system 6 is a catalyst body container 7. Also connected to. With this configuration, as a single gas supply system, the reaction gas is introduced from the reaction gas supply system 6 into the catalyst body container 7 and the inert gas is introduced into the reaction chamber 1 from the inert gas supply system 5. As the mixed gas supply system, an inert gas can also be supplied to the reaction gas supply system 6 via the gas flow rate control device 602, and the mixed gas of the reaction gas and the inert gas is supplied to the catalyst body container 7. Can be introduced.

  Further, the respective gas flow rate control devices can introduce the respective gases simultaneously or with a time difference.

  Although FIG. 2 shows an example in which the inert gas supply system 5 and the reaction gas supply system 6 are connected to supply a single or mixed gas to the catalyst body storage container 7, the raw material gas supply system 4 and the inert gas are shown. The supply system 5 may be connected to supply a single or mixed gas to the reaction chamber 1, and the inert gas supply system 5 is connected to both the raw material gas supply system 4 and the reaction gas supply system 6. They may be connected to supply a single or mixed gas to the reaction chamber 1 or the catalyst body storage container 7.

  By configuring the gas supply system as described above, depending on the required thin film throughput or film quality, a single gas is introduced, a mixed gas is introduced, or a plurality of gases are introduced simultaneously, It is possible to select whether to introduce with a time difference, or to enter a gas exhaust time during film formation.

  Accordingly, the reaction gas that is optimally activated can be introduced into the reaction chamber at an arbitrary timing, so that thin films with various variations can be efficiently mass-produced.

  The configuration of the gas supply system can be used not only in a catalyst CVD apparatus but also in a catalyst atomic layer deposition apparatus (catalyst ALD apparatus).

  Here, an example of a process of forming a film by introducing each gas with a time difference using a catalyst body ALD apparatus will be described.

  First, the source gas is supplied to the reaction chamber 1 through the source gas supply system 4, and the source gas reaches the substrate using the shower head 2. Next, an inert gas is introduced from the inert gas supply system 5 as a purge gas into the reaction chamber 1, and the gas in the reaction chamber 1 is exhausted from the pressure adjustment valve 8 to the exhaust system 9. Subsequently, the reaction gas is introduced from the reaction gas supply system 6 into the catalyst body container 7 and activated by bringing the reaction gas into contact with the heated catalyst body. The valve 61 is opened, the activated reaction gas is introduced into the reaction chamber 1, and film formation is performed on the substrate. After the film formation, an inert gas is again introduced from the inert gas supply system 5 as a purge gas into the reaction chamber 1, and the gas in the reaction chamber 1 is exhausted from the pressure adjustment valve 8 to the exhaust system 9. By repeating such a process, it is possible to form a thin film with good coverage and few impurities.

  FIG. 3 is a side sectional view of a three-way valve 65 that connects the catalyst body storage container 7, the reaction gas supply path 62, and the gas exhaust path 64 in place of the valve 61 and the valve 63 shown in FIG.

  Referring to a) of FIG. 3, reference numeral 651 denotes a valve box that houses the vertical drive unit 652 of the three-way valve 65. On the side surface of the valve box 651, an inlet 651a for the reactive gas activated in the catalyst body storage container 7 is opened. A delivery port 651 b through which the activated reaction gas is sent to the reaction chamber 1 through the reaction gas supply path 62 is opened on the side surface of the valve box 651 at a position facing the reaction gas inlet 651 a. Further, an exhaust port 651c is opened on the bottom surface of the valve box 651 in order to discharge excess gas or the like in the catalyst body storage container 7 to the exhaust system 9 through the gas exhaust path 64.

  A gas flow path 652a that connects the activated reaction gas inlet 651a and the outlet 651b is penetrated in the width direction slightly above the vertical drive unit 652. Further, a gas flow path 652b that connects the reaction gas introduction port 651a and the exhaust port 651c is formed slightly below the vertical drive unit 652. The reaction gas introduction port 651a is opened on the side surface of the valve box 651, and the exhaust port 651c is opened on the bottom surface of the valve box 651. Therefore, the gas flow path 652b is formed to be bent.

  The vertical drive unit 652 slides in the longitudinal direction along the inner wall of the valve box 651. In FIG. 3 a), the gas flow path 652a is located above the reaction gas introduction port 651a and the delivery port 651b, and the gas flow path 652b is located below the introduction port 651a. The gas is in a state where it does not flow out of the reaction chamber 1 and the exhaust system 9 from the catalyst body storage container 7.

  In b) of FIG. 3, the vertical drive unit 652 slides downward as compared with the case of a), and the reaction gas introduction port 651a and the delivery port 651b communicate with each other via the gas flow path 652a. The reaction gas activated in the catalyst body storage container 7 is introduced into the reaction chamber 1 via the gas flow path 652a.

If the high-purity ceramic such as quartz or high purity Al ₂ O ₃ is formed from the catalyst body storage container 7 to the gas supply path 62 via the three-way valve 65 (or valve 61) as a material, the gas is deactivated. And an efficient film formation process can be performed.

  With reference to (a) of FIG. 4, 7 is a catalyst body storage container. The catalyst body storage container 7 is configured by joining a flange 72 to a cylindrical metal water cooling chamber 71. In the approximate center of the flange 72, a reaction gas inlet 721 is opened. An activated reaction gas outlet 711 is opened on the side surface of the metal water cooling chamber 71 opposite to the side to which the flange 72 is joined.

  A quartz inner wall 73 is fitted in the metal water cooling chamber 71. A cylindrical space is formed inside the quartz inner wall 73. This columnar space is gradually narrowed in a frustoconical shape from the middle toward the reaction gas outlet 711 and communicates with the outlet 711.

  The internal shape of the quartz inner wall 73 is not limited to the above-mentioned shape combining a cylindrical shape and a frustoconical shape, and is formed so as to become gradually narrower in the direction of the activated reaction gas outlet 711. Any shape may be used. Therefore, for example, a shape in which the activated reaction gas outlet 711 is formed in a truncated cone shape having a tip portion, a shape in which a cylindrical shape and a hemisphere or truncated cone are combined, and the hemisphere or the truncated cone is formed. The thing which opened the exit 711 of the activated reactive gas at the front-end | tip part of a cone may be used.

  The inlet 721 side of the quartz inner wall 73 is cut off from the flange 72 by interposing a circular quartz plate 74. Accordingly, the internal space of the metal water-cooled chamber 71 is surrounded by the quartz inner wall 73 and the quartz plate 74 except for the outlet 711.

The reason why quartz is used as the inner wall material is to reduce the deactivation of the reaction gas as described above, and is not limited to quartz as long as the material has an effect of reducing the deactivation. For example, other than quartz, high purity ceramics such as high purity Al ₂ O ₃ can be considered.

  FIG. 4B is a cross-sectional view of the quartz plate 74 taken along the line AA in FIG. The quartz plate 74 is provided with two openings 741 that are equidistant from the center on a straight line passing through the center. Quartz pieces 742 are inserted into the two openings 741, respectively.

  Each of the quartz pieces 742 has a hole 742a in the center and a slit 742b in the circumferential direction.

  From the outside of the flange 72, the current introduction terminal 75 passes through the flange 72, passes through the hole 742 a of the quartz piece 742, and passes through the internal space of the quartz inner wall 73. A slightly larger nut 76 is attached to the tip of the current introduction terminal 75, and a wire-shaped catalyst body 77 is fixed by the nut 76. The catalyst body 77 is formed in a spiral shape in accordance with the frustoconical shape in a space where the quartz inner wall 73 is formed in the frustoconical shape.

  If the catalyst body 77 is disposed at a location where the reaction gas outlet 711 gradually narrows toward the reaction gas outlet 711 or at a location where the gas flow velocity near the reaction gas outlet 711 is high, the catalyst body 77 heated with the reaction gas more frequently. Can be contacted.

  The shape of the catalyst body 77 needs to increase the resistance value so as not to increase the electric power reaching the predetermined temperature. Therefore, it is better that the cross-sectional area is small. On the other hand, in order to allow the reaction gas to contact the catalyst body 77 as frequently as possible, it is necessary to increase the surface area of the catalyst body 77. Therefore, for example, the shape of the catalyst body 77 is preferably a spiral shape. At this time, the spiral shape may be a circle or a polygon such as a triangle or a rectangle.

  If the spiral shape is formed so that the dimension in the horizontal direction with respect to the winding of the catalyst body 77 becomes smaller toward the outlet 711 of the reactive gas, the spiral shape becomes gradually narrower toward the outlet direction 711 of the activated reactive gas. The catalyst body 77 can be easily accommodated in the internal space of the quartz inner wall 73 formed as described above.

  In this case, the dimension in the horizontal direction with respect to the winding of the spiral-shaped catalyst body 77 is formed so as to be reduced for each turn in the present embodiment, but is formed so as to be reduced for every plurality of turns. May be.

  In order to prevent the reaction gas from flowing into the space formed between the quartz inner wall 73 and the catalyst body 77 and reducing the probability of contact between the heated catalyst body 77 and the reaction gas, the shape of the catalyst body 77 is changed. What is necessary is just to form in the shape substantially the same as the space shape in which the reaction gas flows in the catalyst body storage container 7. FIG.

  Hereinafter, a process for introducing and activating the reaction gas into the catalyst body storage container 7 of the catalyst body 77 will be described.

  A current is supplied from a power source (not shown) to the current introduction terminal 75 to energize the catalyst body 77 to heat the catalyst body 77. Next, a reactive gas is introduced into the inlet 721 from a reactive gas system (not shown). The introduced reaction gas hits substantially the center of the quartz plate 74, and the flow velocity is reduced. The reaction gas is diffused into the space between the quartz plate 74 and the flange 72, and the flow velocity becomes uniform. The reaction gas having a uniform flow velocity is introduced into the space surrounded by the quartz inner wall 73 through the slit 742 b of the quartz piece 742. The reaction gas introduced into the space from the slit 742b hits the nut 76 and diffuses in the space. The diffused reaction gas comes into contact with the heated catalyst body 77, is activated, and is introduced into the reaction chamber (not shown) from the outlet 711. For reference, the flow of the reaction gas is indicated by an arrow in FIG.

  A metal water cooling chamber 71 is provided with a viewing window (not shown) for monitoring, and a monitor temperature signal is fed back to a control computer (not shown) to adjust the power source power of the power source for heating the catalyst body. Also good.

  In addition, a pressure gauge for monitoring the pressure in the inner space of the quartz inner wall 73 is mounted near the inlet 721 (not shown), and the monitored pressure signal is fed back to the apparatus control computer to monitor the pressure abnormality. Also good.

  By using the reaction gas supply method as described above, even if the reaction chamber 1 and the catalyst body storage container 7 are installed separately and the catalyst body 77 and the substrate are separated from each other, more than the conventional case. An activated reaction gas can be generated.

    According to the present invention, the process of bringing the reaction gas into contact with the heated catalyst body for activation can be performed independently of the reaction chamber, so that the field of thin film production, particularly thin films using chemical vapor deposition, can be used. It can be applied as a stable and highly efficient thin film manufacturing apparatus in the field of manufacturing.

Schematic diagram of thin film manufacturing apparatus according to the present invention Diagram showing connection example of gas supply system Cross-sectional view of three-way valve Side cross-sectional view of catalyst body storage container

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Shower head 3 Substrate holder 4 Raw material gas supply system 5 Inert gas supply system 6 Reaction gas supply system 7 Catalyst body storage container 8 Pressure adjustment valve 9 Exhaust system

Claims (9)

Contacting the reaction gas to the heated catalyst by activating, by a deposition gas comprising the reaction gas and the raw material gases fed this activation, the thin-film deposition apparatus having a reaction chamber for deposition process on the substrate ,
A catalyst body storage container equipped with a reaction gas supply system ;
A reaction chamber provided independently of the catalyst body storage container and provided with a raw material gas supply system and an inert gas supply system;
An exhaust system for exhausting excess film forming gas and reaction byproduct gas from the reaction chamber,
And the catalyst storage container and the reaction chamber and the exhaust system by Zaisa through the three-way valve connected,
A thin film production characterized in that the internal space of the catalyst body storage container is formed so as to become gradually narrower toward the outlet of the reaction gas, and the catalyst body is arranged at a place formed so as to become gradually narrower. apparatus. Until the reaction gas inlet of the reaction chamber through the or al three-way valve the catalyst container is, according to claim 1, characterized in that it is made of a material that reduces the deactivation of the gas was activated Thin film manufacturing equipment. Thin film manufacturing apparatus according to claim 2, wherein said material to reduce the deactivation of the gas was activated quartz, or at most high-purity ceramic such purity Al ₂ O _3. A power adjustment device is provided, which detects a temperature change of the catalyst body itself or a temperature change in the catalyst body storage container, converts the signal, feeds back the signal to a control computer, and heats the catalyst body. thin film manufacturing apparatus according to any one of claims 3 to 1. A pressure control device is provided, which detects a pressure change in the catalyst body storage container, converts the signal and feeds back the signal to a control computer to monitor a pressure abnormality in the catalyst body storage container. thin film manufacturing apparatus according to any one of claims 1 to 4. Thin film production apparatus according to the raw material gas supply system and the reactive gas supply system and the inert gas supply system from claim 1, characterized in that connected to the gas flow control device to one of claims 5. Each gas supply system is connected to a gas supply system other than itself to form a mixed gas supply system, and each mixed gas supply system is also configured to control a gas flow rate with a gas flow rate control device. thin-film deposition apparatus according to any one of claims 1 to 6. This mixed gas supply system is used to connect the raw material gas supply system and the inert gas supply system to form the mixed gas supply system, and supply the raw material gas and the inert gas alone or mixed to the reaction chamber. thin-film deposition apparatus as claimed in any one of claims 7, characterized in that connected to the gas flow control device to the system. The reaction gas supply system and the inert gas supply system are connected to form the mixed gas supply system, and this mixture is used to supply the reaction gas and the inert gas alone or as a mixture to the catalyst body storage container. gas supply system thin film manufacturing apparatus according to claims 1, characterized in that connected to the gas flow control device to one of claims 8 to.

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