JP4231953B2 - Ear hole type SAW thermometer and body temperature management system using the thermometer - Google Patents

Ear hole type SAW thermometer and body temperature management system using the thermometer Download PDF

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JP4231953B2
JP4231953B2 JP2002276908A JP2002276908A JP4231953B2 JP 4231953 B2 JP4231953 B2 JP 4231953B2 JP 2002276908 A JP2002276908 A JP 2002276908A JP 2002276908 A JP2002276908 A JP 2002276908A JP 4231953 B2 JP4231953 B2 JP 4231953B2
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body temperature
thermometer
pulse signal
reflector
saw
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JP2004113270A (en
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瑳一 細田
保夫 村上
晃也 杉山
秀雄 保田
明 内山
利行 斉藤
和美 藪崎
博一 杉山
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ペガサスネット株式会社
博一 杉山
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Description

【０００１】
本発明は、ＳＡＷ(Surface Acoustic Wave：弾性表面波) 体温計デバイスを内蔵した耳孔式ＳＡＷ体温計により患者の正確な体温データの計測とＩＤ情報の取得を行うことに関するものである。
【０００２】
【従来の技術】
従来、人体の体温を測る手段として水銀体温計や温度センサーによる電子体温計が使用されていた。また、近年において耳孔内の鼓膜及びその周辺部から放射される赤外線を焦電センサーにて数秒のうちに計測する耳孔式体温計が普及し始めている。
【０００３】
上記水銀体温計や電子体温計又は耳孔式体温計は定期的な検温時間における体温測定に使用するものであり、連続的な体温データが必要な病院等の患者や保育器内の乳幼児等の体温測定を行う場合には、温度センサーを患者の体温計測部位に貼付して体温データをサンプリング計測する手段があるが、該手段における温度センサーには信号線があるため体の動きが制限されてしまうといった問題点があった。該問題点を解決するため、本願出願人による特願２００２−１３１３４６「ＩＤ付きＳＡＷデバイス体温計及び該体温計による体温管理システム」においては、ＳＡＷデバイス体温計から出力される反射パルス信号を受信して演算処理することにより体温測定を行うことができる、コードレスのＩＤ付きＳＡＷデバイス体温計を提案した。
【０００４】
【発明が解決しようとする課題】
しかしながら、上記温度センサー又はＳＡＷデバイス体温計は、患者の体表面における体温計測部位に貼付して体温データをサンプリング計測する方式ため、外気や衣服等による温度変化の影響を受け易く、正確な体温測定を行うことができないといった問題点があった。
【０００５】
本発明は、以上のような問題点を解決するために提案されたものであり、患者の正確な体温データの計測とＩＤ情報の取得を行うことが出来、更には信号線がないことにより体の動きを制限することなく体温データを連続的に計測することができるＳＡＷ体温計デバイスを内蔵した耳孔式ＳＡＷ体温計の提供を目的とする。また当該データをネットワーク経由で収集すれば、多数の患者の体温データを一元管理することが可能である。
【０００６】
【課題を解決するための手段】
上記課題を解決するため、本発明の耳孔式ＳＡＷ体温計及び該体温計による体温管理システムは、体温データを計測するための体温計測用リフレクタとＩＤ情報を取得するためのＩＤ用リフレクタとデータ検出パルス信号の受信及び反射パルス信号の送信を行うためのＩＤＴを有したＳＡＷ体温計デバイス及びアンテナをケーシングに内蔵した耳孔式ＳＡＷ体温計と、該耳孔式ＳＡＷ体温計に対しデータ検出パルス信号の送信及び当該耳孔式ＳＡＷ体温計から出力される反射パルス信号の受信を行うと共に、該反射パルス信号を演算処理することにより体温データの計測及びＩＤ情報の取得を行い、更にはネットワークを経由して前記体温データ及びＩＤ情報をサーバーに伝送することができる体温計測装置にて構成する。また、前記ＩＤ情報に対応する体温データをサーバーにて連続的に計測し、患者毎にデータベース化することにより体温データの一元管理を行う。
【０００７】
【発明の実施の形態】
本発明の実施の形態を図を用いて説明する。図１は本発明の耳孔式ＳＡＷ体温計を耳孔内に挿着した状態及び測定方法を示した図である。
【０００８】
耳孔式ＳＡＷ体温計１は、ケーシング２において体温データを計測するための体温計測用リフレクタとＩＤ情報を取得するためのＩＤ用リフレクタとデータ検出パルス信号の受信及び反射パルス信号の送信を行うためのＩＤＴを有したＳＡＷ体温計デバイス３を先端部に鼓膜１１及びその周辺部から放射される赤外線を導入するための孔２ａを穿孔したプローブ２ｂに内蔵し、前記ＩＤＴに接続したアンテナ６を本体２ｃに内蔵して構成する。使用時には、該耳孔式ＳＡＷ体温計１のプローブ２ｂをイヤホンのように耳孔１０内に挿着するだけである。
【０００９】
体温測定を行う場合、体温計測装置１２のアンテナ１３より耳孔式ＳＡＷ体温計１に対しデータ検出パルス信号を送信すると当該耳孔式ＳＡＷ体温計１から反射パルス信号が出力される。そして、該反射パルス信号をアンテナ１３で受信して演算処理することにより体温データの計測及びＩＤ情報の取得を行うことができる。該体温データはＬＣＤ等のモニタ部２３に表示したりネットワーク２４を経由して体温データ及びＩＤ情報をサーバーに伝送することができる。
【００１０】
図２は本発明の耳孔式ＳＡＷ体温計に内蔵するＳＡＷ体温計デバイスの構造を示した一実施例図であり、ＳＡＷ体温計デバイス３の基板４上の略中央部にＩＤＴ５（Interdigital Transducers）を配設し、左側部に２本のリフレクタで構成される体温計測用リフレクタ７をＩＤＴ５と平行に配設し、更に右側部に多数のリフレクタで構成されるＩＤ用リフレクタ８をＩＤＴ５と平行に配設してある。前記ＩＤ用リフレクタ８は、ＩＤＴ５に対し手前側が短く奥側が長いリフレクタを当該リフレクタの基板内部側の先端の包絡線がＶ字型を成すと共に各ビットが交互にクシ型を成すように配設する。また、各ＩＤ用リフレクタ８の基板端部側にＩＤ設定用ヒューズ９を配設する。また、ＩＤＴ５の両端部を接続したアンテナ端子Ａに外部のアンテナ６を接続する。
【００１１】
上記図２において、基板４の下部側のＩＤＴ５に近い方よりビット１，ビット３，ビット５‥‥ビット２３を配設し、上部側のＩＤＴ５に近い方よりビット２，ビット４，ビット６‥‥ビット２４の計２４本のＩＤ用リフレクタ８を配設してあるため、最大２４ビットのＩＤパターンを発生することができる。なお、ビット２１〜２４まではＶ字型の底部に相当する部分であり、該底部における数ビット分の配設方法はクシ型にした以外は一般的方法である。また、ＩＤ設定用ヒューズ９は、ＩＤ用リフレクタ８のパターン幅に比べ非常に細くして微小抵抗成分を持たせている。
【００１２】
また、図３は本発明の耳孔式ＳＡＷ体温計及び該体温計による体温管理システムにおける体温計測装置の回路ブロック図であり、該体温計測装置１２はアンテナ１３より耳孔式ＳＡＷ体温計１に対しデータ検出パルス信号を送信したり耳孔式ＳＡＷ体温計１のアンテナ６から送信される体温データ及びＩＤ情報を含む反射パルス信号を受信するためのパルス送受信部１４と、前記データ検出パルス信号の原信号を生成するためのパルス発生部１５と、前記反射パルス信号を増幅するための増幅部１６及び当該反射パルス信号の位相又は振幅を検出するための位相又は振幅検出部１７と、基準温度における基準反射時間間隔を生成するための恒温槽１８及び当該恒温槽１８内に配設された基準ＳＡＷデバイス又は基準パルス発生回路１９と、前記位相又は振幅検出部１７より得られた体温データ及びＩＤ情報を含む反射パルス信号のうち体温データにより反射時間間隔と基準温度における基準ＳＡＷデバイス又は基準パルス発生回路１９の基準反射時間間隔との遅延時間を計測して演算処理することにより体温データを算出したりＩＤパターンによりＩＤ情報を取得するためのデータ処理部２０と、後段のネットワーク２４と接続して当該体温データやＩＤ情報を伝送するためのネットワーク通信部２１と、前記データ処理部２０内のＣＰＵ等を制御するためのプログラムを蓄積し又レジスタとして機能するメモリ部２２と、前記体温データをＬＣＤ等にて表示するためのモニタ部２３等により構成する。
【００１３】
図４はＩＤ設定用ヒューズの溶断によりＩＤ設定を行った状態図であり、データ検出パルス信号に対するＩＤ用リフレクタ８からの反射を有効にするためには、該当ビット端子と共通端子Ｇ間に高圧パルス発生器（図示せず）からの高圧パルスを印加するとＩＤ設定用ヒューズ9は抵抗成分により発熱して溶断し、ＩＤ用リフレクタ8が有効となる。図４では、ビット１，５及び１１のＩＤ設定用ヒューズ9が溶断した状態を示している。このようにして、ＩＤパターンのビット長を予め設定したり、設定したビット長において異なるＩＤパターン発生の設定を行うことができる。例えばビット長を２０ビットとした場合には、ＩＤパターンは２２０−１個の異なるＩＤパターンを発生することができる。そして、該ＩＤパターン内におけるＩＤ情報として、患者識別番号，性別，年齢，診療科名等の複数の情報を入力することができる。
【００１４】
ここで、耳孔式ＳＡＷ体温計１に対しデータ検出パルス信号を体温計測装置１２のアンテナ１３より送信すると、該データ検出パルス信号はアンテナ６で受信された後、ＩＤＴ５より基板４の左右両側に進行する。ここで、左側に進行したデータ検出パルス信号は体温計測用リフレクタ７で反射され、再びＩＤＴ５に戻り体温データを含んだ反射パルス信号としてアンテナ６より出力される。また、右側に進行したデータ検出パルス信号はＩＤ用リフレクタ８で反射され、再びＩＤＴ５に戻りＩＤ情報を含んだ反射パルス信号としてアンテナ６より出力される。なお、ＩＤＴ５における体温計測用リフレクタ７までの距離とＩＤ用リフレクタ８までの距離として、体温計測用リフレクタ７までの距離がＩＤ用リフレクタ８までの距離より短く、先に体温データを含んだ反射パルス信号が送信され次にＩＤ情報を含んだ反射パルス信号が送信されるため、両反射パルス信号が重畳することはない。
【００１５】
また、図５は図２の体温計測用リフレクタにおけるデータ検出パルス信号及び反射パルス信号の関係を示した図であり、耳孔式ＳＡＷ体温計１に対して体温計測装置１２のアンテナ１３よりデータ検出パルス信号Ｐを送信すると、該データ検出パルス信号Ｐはアンテナ６で受信された後、（ａ）図の▲１▼で示すようにＩＤＴ５より基板４の左側に進行し、最初の体温計測用リフレクタ７−１で反射される。ここで、該反射により発生した反射パルス信号をａとする。次に、▲２▼で示すデータ検出パルス信号Ｐは更に左側に進行し、２番目の体温計測用リフレクタ７−２で反射される。ここで、該反射により発生した反射パルス信号をｂとすると、両反射パルス信号ａ，ｂは再びＩＤＴ５に戻りアンテナ６より反射パルス信号として体温計測装置１２のアンテナ１３に対して出力される。
【００１６】
ここで、（ｂ）図で示すように実測体温がＴ１の時の反射パルス信号ａ，ｂの反射時間間隔をｔ１とし、基準温度をＴ２とした時の反射パルス信号ａ，ｂ’の基準反射時間間隔をｔ２とすると、基準温度Ｔ２と実測体温Ｔ１の差は、基準反射時間間隔ｔ２と反射時間間隔ｔ１の差すなわち遅延時間ｔ３を計測することにより求めることができる。該反射時間間隔ｔ１は、体温が高いと短くなり体温が低いと長くなる性質があり、更には体温と反射時間間隔ｔ１の関係式はＩＤＴ５と体温計測用リフレクタ７−１，７−２間の距離及びデータ検出パルス信号Ｐに含まれるキャリア周波数の位相との１次関数で表されるため、基準温度Ｔ２における基準反射時間間隔ｔ２が判れば実測体温Ｔ１が容易に算出することができる。このように、体温計測は反射パルス信号ａ，ｂの反射時間間隔ｔ１の計測のみにより算出できるため、体温計測装置１２と耳孔式ＳＡＷ体温計１との距離には無関係に計測することができる。
【００１７】
次に、ＩＤ用リフレクタ８の反射原理を説明する。図６は図２の２点鎖線部におけるデータ検出パルス信号と反射パルス信号の関係を示した図であり、（ａ）図に示すようにＩＤＴ５から出力されたデータ検出パルス信号ＰがＩＤ用リフレクタ８の１ビット目のリフレクタ８−１と３ビット目のリフレクタ８−３及び５ビット目のリフレクタ８−５により反射される状態を示している。ここで、ＩＤ用リフレクタ８がＶ字型を成すため、３ビット目のリフレクタ８−３は１ビット目のリフレクタ８−１より幅Ｗだけ基板４の内側に延び、５ビット目のリフレクタ８−５は３ビット目のリフレクタ８−３より幅Ｗだけ基板４の内側に延びているものとする。ここで、ＩＤＴ５よりデータ検出パルス信号Ｐが出力されると、１ビット目のリフレクタ８−１より反射パルス信号ｃが発生する。また、３ビット目のリフレクタ８−３の幅Ｗの部分より反射パルス信号ｄが発生すると共に他の部分において１ビット目のリフレクタ８−１を通過したデータ検出力パルス信号Ｐにより反射パルス信号ｄ’が発生する。また、５ビット目のリフレクタ８−５の幅Ｗの部分より反射パルス信号ｅが発生すると共に他の部分において１ビット目のリフレクタ８−１と３ビット目のリフレクタ８−３を通過したデータ検出パルス信号Ｐにより反射パルス信号ｅ’が発生する。ここで、（ｂ）図に示すように反射パルス信号ｄと反射パルス信号ｄ’の時間遅れを無視すると当該反射パルス信号ｄと反射パルス信号ｄ’が重なり合い、反射パルス信号ｅと反射パルス信号ｅ’の時間遅れを無視すると当該反射パルス信号ｅと反射パルス信号ｅ’が重なり合い、ＩＤＴ５よりＬ１の距離にあるリフレクタ８−1が反射する反射パルス信号ｃとＬ３の距離にあるリフレクタ８−３が反射する反射パルス信号ｄとＬ５の距離にあるリフレクタ８−５が反射する反射パルス信号ｅのレベルは減衰することなく忠実にＩＤＴ５に反射されることになる。なお、図６ではビット１，３，５の奇数番目のリフレクタについて説明したが偶数番目のリフレクタについても同様であり、ＩＤ用リフレクタ８の各ビットが交互にクシ型に配設されているため、ビット１，２，３，４，５，６‥‥と順に反射されることになる。
【００１８】
また、図７は図４のＩＤパターンにおけるＩＤ用リフレクタからの反射パルス信号の位置関係を示した図であり、図４に示すように全２４ビット中ビット１，５及び１１のＩＤ設定用ヒューズ９を高圧パルス発生器により溶断したと仮定した場合、ＩＤＴ５より出力されたデータ検出パルス信号Ｐによりビット１のリフレクタ８−１による反射パルス信号ｐ１とビット５のリフレクタ８−５による反射パルス信号ｐ５及びビット１１のリフレクタ８−１１による反射パルス信号ｐ１１のみがＩＤＴ５に反射される。そして、該ＩＤ情報を含んだ反射パルス信号を体温計測装置１２に対し出力することになる。なお、ＩＤ設定用ヒューズ９の溶断を行わなかったビットのＩＤ用リフレクタ８は当該ＩＤ設定用ヒューズ９により共通端子Ｇに接続され、更に当該共通端子Ｇをアンテナ端子Ａ側に接続することにより、どこにデータ検出パルス信号Ｐが当っても減衰して反射は発生しない。このため、ＩＤ設定用ヒューズ９を溶断又は非溶断することによりＩＤパターンのビット長を予め設定したり、設定したビット長において異なるＩＤパターン発生の設定を行うことができることになる。
【００１９】
【実施例】
本発明の実施例を図を用いて説明する。図８は本発明の耳孔式ＳＡＷ体温計及び該体温計による体温管理システムを病院の患者の体温管理システムに応用した一実施例図である。
【００２０】
カーテン２７で仕切られた各病室２８において、各患者２９のベッド３０の頭部側には小物入れやテーブル等が一体となった床頭台３１が設置されている。そこで、該床頭台３１に体温計測装置１２を設置すると共に、該体温計測装置１２内のネットワーク通信部２１を病院内のＬＡＮ等のネットワーク２４に接続し、更に当該ネットワーク２４を経由して上位のサーバー２５に接続する。また、該サーバー２５にはモニタ装置２６を接続する。
【００２１】
体温計測装置１２のアンテナ１３からは、患者２９の耳孔１０内に挿着された耳孔式ＳＡＷ体温計１に対してデータ検出パルス信号Ｐを一定のサンプリング周期にて送信する。次に、該データ検出パルス信号Ｐに反応した耳孔式ＳＡＷ体温計１のアンテナ６からは、当該患者２９の実時間における反射パルス信号が体温計測装置１２のアンテナ１３に対し出力される。なお、該体温計測装置１２から耳孔式ＳＡＷ体温計１へのデータ検出パルス信号Ｐの送信能力は、隣の患者２９の反射パルス信号との混信を防止するため、１ｍ程度が好適である。
【００２２】
体温計測装置１２は、該反射パルス信号中の体温データより反射時間間隔と当該体温計測装置１２内の恒温槽１８内に配設されている基準ＳＡＷデバイス又は基準パルス発生回路１９の基準温度における基準反射時間間隔とを比較して演算処理することにより患者２９の体温を正確に計測することができ、更に該反射パルス信号中のＩＤ情報より患者２９のＩＤ情報を取得することができる。そして、該演算により算出された体温データ及びＩＤ情報をＬＡＮ等のネットワーク２４を経由してサーバー２５に伝送する。なお、前記恒温槽１８は小型の電気式又は電子式ヒーターが一般的であるが、基準ＳＡＷデバイス又は基準パルス発生回路１９自体に定温制御回路を付加したものであっても構わない。
【００２３】
サーバー２５は、上記体温データをＩＤ情報に基づいてデータベース化することにより、患者毎の体温データを連続的に計測することができる。そして、当該患者２９の体温に異常が発生した場合等においては、ネットワーク２４を経由してナースセンター内の端末装置にアラーム出力することが可能である。このようにして、多数の患者２９の連続的な体温データをデータベース化することにより、患者毎の体温データをネットワークで一元管理することが可能となる。
【００２４】
なお、上記サーバー２５に接続したモニタ装置２６は各患者２９の体温データの数値表示やグラフ表示を行うことができ、更にアラーム出力を行うための設定値等を入力することもできる。更にはプリンタ（図示せず）への印字設定を行うことも可能である。
【００２５】
また、上述の説明は体温計測装置１２を床頭台３１に設置した例について述べたが、ベッド３０の頭部側等など任意な場所に設置しても構わない。更には体温測定の対象を病院等の患者とし、ネットワーク２４を経由して多数の患者の体温データの一元管理を行う例について述べたが、オンライン機能やＩＤ情報を利用しないでスタンドアロンで使用するようにすれば、家庭内における病人の体温測定に使用することも可能である。
【００２６】
【発明の効果】
以上述べたように、本発明の耳孔式ＳＡＷ体温計及び該体温計による体温管理システムを病院や老人ホーム又は在宅介護等において実施すれば、耳孔式ＳＡＷ体温計を患者の耳孔内に挿着しておくだけで正確な体温データの連続計測が容易に行うことができるという効果を奏する。また、該耳孔式ＳＡＷ体温計には信号線がなく、更には電子回路やバッテリー等もなく非常に小型であるため、体の動きを制限することがないという効果も奏する。また、ネットワークを経由して多数の患者の連続的な体温データをＩＤ情報に基づきデータベース化することにより、患者毎の体温データをネットワークで一元管理することができるという効果も奏する。
【図面の簡単な説明】
【図１】本発明の耳孔式ＳＡＷ体温計を耳孔内に挿着した状態及び測定方法を示した図である。
【図２】本発明の耳孔式ＳＡＷ体温計に内蔵するＳＡＷ体温計デバイスの構造を示した一実施例図である。
【図３】本発明の耳孔式ＳＡＷ体温計及び該体温計による体温管理システムにおける体温計測装置の回路ブロック図である。
【図４】ＩＤ設定用ヒューズの溶断によりＩＤ設定を行った状態図である。
【図５】図２の体温計測用リフレクタにおけるデータ検出パルス信号と反射パルス信号の関係を示した図である。
【図６】図２の２点鎖線部におけるデータ検出パルス信号と反射パルス信号の関係を示した図である。
【図７】図４のＩＤパターンにおけるＩＤ用リフレクタからの反射パルス信号の位置関係を示した図である。
【図８】本発明の耳孔式ＳＡＷ体温計及び該体温計による体温管理システムを病院の患者の体温管理システムに応用した一実施例図である。
【符号の説明】
１ 耳孔式ＳＡＷ体温計
２ ケーシング
３ ＳＡＷ体温計デバイス
４ 基板
５ ＩＤＴ
６ アンテナ
７ 体温計測用リフレクタ
８ ＩＤ用リフレクタ
９ ＩＤ設定用ヒューズ
１０ 耳孔
１１ 鼓膜
１２ 体温計測装置
１３ アンテナ
１４ パルス送受信部
１５ パルス発生部
１６ 増幅部
１７ 位相又は振幅検出部
１８ 恒温槽
１９ 基準ＳＡＷデバイス又は基準パルス発生回路
２０ データ処理部
２１ ネットワーク通信部
２２ メモリ部
２３ モニタ部
２４ ネットワーク
２５ サーバー
２６ モニタ装置
２７ カーテン
２８ 病室
２９ 患者
３０ ベッド
３１ 床頭台[0001]
The present invention relates to accurate measurement of patient temperature data and acquisition of ID information using an ear canal type SAW thermometer incorporating a SAW (Surface Acoustic Wave) thermometer device.
[0002]
[Prior art]
Conventionally, mercury thermometers and electronic thermometers using temperature sensors have been used as means for measuring the temperature of the human body. In recent years, ear-hole thermometers that measure infrared rays radiated from the eardrum in the ear canal and its surroundings with a pyroelectric sensor within a few seconds have begun to spread.
[0003]
The mercury thermometer, electronic thermometer, or ear canal thermometer is used to measure body temperature during regular temperature measurements, and measures body temperature of hospital patients and infants in incubators that require continuous body temperature data. In some cases, there is a means for sampling and measuring body temperature data by attaching a temperature sensor to the body temperature measurement site of the patient, but the temperature sensor in the means has a signal line, which limits the movement of the body was there. In order to solve this problem, in Japanese Patent Application No. 2002-131346 “SAW device thermometer with ID and body temperature management system using thermometer” by the applicant of the present application, a reflected pulse signal output from the SAW device thermometer is received and processed. A cordless ID-attached SAW device thermometer that can measure body temperature by doing so was proposed.
[0004]
[Problems to be solved by the invention]
However, because the temperature sensor or SAW device thermometer is a method of sampling and measuring body temperature data by attaching it to a body temperature measurement site on the patient's body surface, it is easily affected by temperature changes due to outside air, clothes, etc., and accurate temperature measurement is possible. There was a problem that it could not be done.
[0005]
The present invention has been proposed in order to solve the above-described problems, and can accurately measure a patient's temperature data and acquire ID information. An object of the present invention is to provide an ear canal type SAW thermometer with a built-in SAW thermometer device capable of continuously measuring body temperature data without restricting the movement of the body. Moreover, if the data is collected via a network, it is possible to centrally manage body temperature data of a large number of patients.
[0006]
[Means for Solving the Problems]
In order to solve the above problems, an ear canal type SAW thermometer and a body temperature management system using the thermometer according to the present invention include a body temperature measurement reflector for measuring body temperature data, an ID reflector for acquiring ID information, and a data detection pulse signal. SAW thermometer device with IDT for receiving and transmitting reflected pulse signal, ear hole type SAW thermometer with antenna built in casing, transmission of data detection pulse signal to said ear hole type SAW thermometer, and said ear hole type SAW The reflected pulse signal output from the thermometer is received, and the reflected pulse signal is processed to measure body temperature data and acquire ID information. Further, the body temperature data and ID information are obtained via a network. It consists of a body temperature measuring device that can be transmitted to the server. In addition, body temperature data corresponding to the ID information is continuously measured by a server, and database management is performed for each patient, thereby centrally managing body temperature data.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a state and measurement method in which the ear canal SAW thermometer of the present invention is inserted into the ear canal.
[0008]
The ear canal type SAW thermometer 1 includes a body temperature measuring reflector for measuring body temperature data in the casing 2, an ID reflector for acquiring ID information, an IDT for receiving a data detection pulse signal and transmitting a reflected pulse signal. The SAW thermometer device 3 having the above is incorporated in the probe 2b having a hole 2a for introducing infrared rays radiated from the eardrum 11 and its peripheral part at the tip, and the antenna 6 connected to the IDT is incorporated in the main body 2c. And configure. In use, the probe 2b of the ear canal type SAW thermometer 1 is simply inserted into the ear hole 10 like an earphone.
[0009]
When body temperature measurement is performed, when a data detection pulse signal is transmitted from the antenna 13 of the body temperature measuring device 12 to the ear canal SAW thermometer 1, a reflected pulse signal is output from the ear canal SAW thermometer 1. The reflected pulse signal is received by the antenna 13 and processed to measure body temperature data and acquire ID information. The body temperature data can be displayed on a monitor unit 23 such as an LCD, or the body temperature data and ID information can be transmitted to the server via the network 24.
[0010]
FIG. 2 is a diagram showing an example of the structure of a SAW thermometer device built in the ear canal type SAW thermometer of the present invention. An IDT 5 (Interdigital Transducers) is disposed at a substantially central portion on the substrate 4 of the SAW thermometer device 3. The body temperature measuring reflector 7 composed of two reflectors is arranged on the left side in parallel with the IDT 5, and the ID reflector 8 composed of many reflectors is arranged on the right side in parallel with the IDT 5. is there. The ID reflector 8 is provided with a reflector having a short front side and a long back side with respect to the IDT 5 such that the envelope at the tip of the reflector inside the substrate forms a V shape and each bit alternately forms a comb shape. . Further, an ID setting fuse 9 is disposed on the substrate end side of each ID reflector 8. An external antenna 6 is connected to the antenna terminal A to which both ends of the IDT 5 are connected.
[0011]
In FIG. 2, the bit 1, bit 3, bit 5... Bit 23 are arranged from the lower side of the substrate 4 closer to the IDT 5, and the bit 2, bit 4, bit 6. Since a total of 24 ID reflectors 8 of 24 bits are arranged, an ID pattern of a maximum of 24 bits can be generated. The bits 21 to 24 are portions corresponding to the bottom of the V-shape, and the arrangement method for several bits at the bottom is a general method except that it is comb-shaped. Further, the ID setting fuse 9 is very narrow compared with the pattern width of the ID reflector 8 and has a minute resistance component.
[0012]
FIG. 3 is a circuit block diagram of the ear canal SAW thermometer and the body temperature measuring device in the body temperature management system using the thermometer of the present invention. The body temperature measuring device 12 transmits a data detection pulse signal from the antenna 13 to the ear canal SAW thermometer 1. For transmitting a reflected pulse signal including body temperature data and ID information transmitted from the antenna 6 of the ear canal type SAW thermometer 1, and for generating an original signal of the data detection pulse signal A pulse generation unit 15, an amplification unit 16 for amplifying the reflected pulse signal, a phase or amplitude detection unit 17 for detecting the phase or amplitude of the reflected pulse signal, and a reference reflection time interval at a reference temperature are generated. And a reference SAW device or reference pulse generation circuit 19 disposed in the thermostat 18, Delay time between the reflection time interval and the reference reflection time interval of the reference SAW device or the reference pulse generation circuit 19 at the reference temperature according to the body temperature data among the reflection pulse signals including the body temperature data and ID information obtained from the phase or amplitude detection unit 17. For calculating body temperature data by measuring and calculating the body temperature data and acquiring ID information by the ID pattern, and connecting to the network 24 in the subsequent stage for transmitting the body temperature data and ID information. A network communication unit 21, a memory unit 22 that stores a program for controlling the CPU and the like in the data processing unit 20 and functions as a register, a monitor unit 23 for displaying the body temperature data on an LCD, etc. It consists of.
[0013]
FIG. 4 is a state diagram in which ID setting is performed by blowing the ID setting fuse. In order to enable reflection from the ID reflector 8 for the data detection pulse signal, a high voltage is applied between the corresponding bit terminal and the common terminal G. When a high voltage pulse from a pulse generator (not shown) is applied, the ID setting fuse 9 generates heat due to the resistance component and melts, and the ID reflector 8 becomes effective. FIG. 4 shows a state where the ID setting fuses 9 of the bits 1, 5 and 11 are blown. In this way, the bit length of the ID pattern can be set in advance, or different ID pattern generation can be set for the set bit length. For example, when the bit length is 20 bits, the ID pattern can generate 2 20 −1 different ID patterns. A plurality of pieces of information such as a patient identification number, sex, age, and department name can be input as ID information in the ID pattern.
[0014]
Here, when a data detection pulse signal is transmitted from the antenna 13 of the body temperature measuring device 12 to the ear canal type SAW thermometer 1, the data detection pulse signal is received by the antenna 6, and then proceeds to the left and right sides of the substrate 4 from the IDT 5. . Here, the data detection pulse signal proceeding to the left is reflected by the body temperature measuring reflector 7 and returns to the IDT 5 again to be output from the antenna 6 as a reflected pulse signal including body temperature data. The data detection pulse signal that has traveled to the right is reflected by the ID reflector 8, returns to the IDT 5 again, and is output from the antenna 6 as a reflected pulse signal including ID information. Note that the distance to the body temperature measuring reflector 7 and the distance to the ID reflector 8 in the IDT 5 are shorter than the distance to the ID reflector 8 and the reflected pulse including the body temperature data first. Since the signal is transmitted and then the reflected pulse signal including the ID information is transmitted, both reflected pulse signals are not superimposed.
[0015]
FIG. 5 is a diagram showing the relationship between the data detection pulse signal and the reflection pulse signal in the body temperature measurement reflector of FIG. 2. The data detection pulse signal is transmitted from the antenna 13 of the body temperature measuring device 12 to the ear canal type SAW thermometer 1. When P is transmitted, the data detection pulse signal P is received by the antenna 6, and then proceeds to the left side of the substrate 4 from the IDT 5 as shown by (1) in FIG. 1 is reflected. Here, a reflected pulse signal generated by the reflection is represented by a. Next, the data detection pulse signal P indicated by (2) travels further to the left and is reflected by the second body temperature measuring reflector 7-2. Here, if the reflected pulse signal generated by the reflection is b, both reflected pulse signals a and b return to the IDT 5 again and are output from the antenna 6 to the antenna 13 of the body temperature measuring device 12 as reflected pulse signals.
[0016]
Here, as shown in FIG. 6B, the reference reflection of the reflected pulse signals a and b ′ when the reflected time interval of the reflected pulse signals a and b when the measured body temperature is T1 is t1, and the reference temperature is T2. When the time interval is t2, the difference between the reference temperature T2 and the measured body temperature T1 can be obtained by measuring the difference between the reference reflection time interval t2 and the reflection time interval t1, that is, the delay time t3. The reflection time interval t1 has a property that it becomes short when the body temperature is high and becomes long when the body temperature is low. Further, the relational expression between the body temperature and the reflection time interval t1 is between the IDT 5 and the temperature measurement reflectors 7-1 and 7-2. Since it is expressed by a linear function of the distance and the phase of the carrier frequency included in the data detection pulse signal P, the measured body temperature T1 can be easily calculated if the reference reflection time interval t2 at the reference temperature T2 is known. Thus, since the body temperature can be calculated only by measuring the reflection time interval t1 of the reflected pulse signals a and b, the body temperature can be measured regardless of the distance between the body temperature measuring device 12 and the ear hole type SAW thermometer 1.
[0017]
Next, the reflection principle of the ID reflector 8 will be described. FIG. 6 is a diagram showing the relationship between the data detection pulse signal and the reflected pulse signal in the two-dot chain line portion of FIG. 2, and the data detection pulse signal P output from the IDT 5 is the ID reflector as shown in FIG. 8 shows a state of being reflected by a reflector 8-1 of the 1st bit, a reflector 8-3 of the 3rd bit, and a reflector 8-5 of the 5th bit. Here, since the ID reflector 8 is V-shaped, the third-bit reflector 8-3 extends inside the substrate 4 by a width W from the first-bit reflector 8-1, and the fifth-bit reflector 8- 5 is assumed to extend inside the substrate 4 by a width W from the reflector 8-3 of the third bit. Here, when the data detection pulse signal P is output from the IDT 5, the reflected pulse signal c is generated from the reflector 8-1 of the first bit. The reflected pulse signal d is generated from the width W portion of the third-bit reflector 8-3, and the reflected pulse signal d is generated by the data power pulse signal P that has passed through the first-bit reflector 8-1 in other portions. 'Occurs. In addition, a reflected pulse signal e is generated from the width W portion of the fifth bit reflector 8-5, and data detection that passes through the first bit reflector 8-1 and the third bit reflector 8-3 in the other portion. A reflected pulse signal e ′ is generated by the pulse signal P. Here, as shown in FIG. 5B, when the time delay between the reflected pulse signal d and the reflected pulse signal d ′ is ignored, the reflected pulse signal d and the reflected pulse signal d ′ overlap, and the reflected pulse signal e and the reflected pulse signal e are overlapped. If the time delay of 'is ignored, the reflected pulse signal e and the reflected pulse signal e' overlap, and the reflector 8-3 at the distance of L3 reflected by the reflector 8-1 at the distance of L1 from the IDT 5 is reflected by the reflector 8-3. The level of the reflected pulse signal e reflected by the reflector 8-5 at a distance of L5 from the reflected pulse signal d to be reflected is faithfully reflected by the IDT 5 without being attenuated. Although the odd-numbered reflectors of bits 1, 3, and 5 are described in FIG. 6, the same applies to the even-numbered reflectors, and the bits of the ID reflector 8 are alternately arranged in a comb shape. Bits 1, 2, 3, 4, 5, 6,.
[0018]
7 is a diagram showing the positional relationship of the reflected pulse signal from the ID reflector in the ID pattern of FIG. 4. As shown in FIG. 4, ID setting fuses of bits 1, 5 and 11 in all 24 bits. 9 is blown by the high-voltage pulse generator, the reflected pulse signal p1 from the reflector 8-1 of bit 1 and the reflected pulse signal p5 from the reflector 8-5 of bit 5 based on the data detection pulse signal P output from the IDT 5 And only the reflected pulse signal p11 by the reflector 8-11 of the bit 11 is reflected to the IDT 5. Then, the reflected pulse signal including the ID information is output to the body temperature measuring device 12. It should be noted that the ID reflector 8 of the bit for which the ID setting fuse 9 has not been blown is connected to the common terminal G by the ID setting fuse 9, and the common terminal G is further connected to the antenna terminal A side. No matter where the data detection pulse signal P hits, it is attenuated and no reflection occurs. For this reason, the ID pattern fuse 9 is blown or not blown, so that the bit length of the ID pattern can be set in advance, or different ID pattern generation can be set for the set bit length.
[0019]
【Example】
Embodiments of the present invention will be described with reference to the drawings. FIG. 8 is a diagram showing an embodiment in which the ear canal SAW thermometer and the body temperature management system using the body thermometer of the present invention are applied to a body temperature management system for a patient in a hospital.
[0020]
In each hospital room 28 partitioned by the curtain 27, a floor head base 31 in which an accessory case and a table are integrated is installed on the head side of the bed 30 of each patient 29. Therefore, the body temperature measuring device 12 is installed on the floor head base 31, and the network communication unit 21 in the body temperature measuring device 12 is connected to a network 24 such as a LAN in the hospital, and further via the network 24. To the server 25. A monitor device 26 is connected to the server 25.
[0021]
A data detection pulse signal P is transmitted from the antenna 13 of the body temperature measuring device 12 to the ear hole type SAW thermometer 1 inserted in the ear hole 10 of the patient 29 at a constant sampling period. Next, the reflected pulse signal of the patient 29 in real time is output from the antenna 6 of the ear canal type SAW thermometer 1 in response to the data detection pulse signal P to the antenna 13 of the body temperature measuring device 12. The transmission capability of the data detection pulse signal P from the body temperature measuring device 12 to the ear canal type SAW thermometer 1 is preferably about 1 m in order to prevent interference with the reflected pulse signal of the adjacent patient 29.
[0022]
The body temperature measuring device 12 uses the body temperature data in the reflected pulse signal as a reference for the reflection time interval and the reference temperature of the reference SAW device or the reference pulse generating circuit 19 disposed in the thermostat 18 in the body temperature measuring device 12. By calculating the comparison with the reflection time interval, the body temperature of the patient 29 can be accurately measured, and the ID information of the patient 29 can be acquired from the ID information in the reflection pulse signal. Then, the body temperature data and the ID information calculated by the calculation are transmitted to the server 25 via the network 24 such as a LAN. The thermostat 18 is generally a small electric or electronic heater, but may be a reference SAW device or a reference pulse generation circuit 19 itself with a constant temperature control circuit added thereto.
[0023]
The server 25 can continuously measure the body temperature data for each patient by creating a database of the body temperature data based on the ID information. When an abnormality occurs in the body temperature of the patient 29, an alarm can be output to the terminal device in the nurse center via the network 24. Thus, by making continuous body temperature data of a large number of patients 29 into a database, it becomes possible to centrally manage body temperature data for each patient over a network.
[0024]
The monitor device 26 connected to the server 25 can perform numerical display and graph display of body temperature data of each patient 29, and can also input a set value for alarm output. Furthermore, it is possible to set printing to a printer (not shown).
[0025]
Moreover, although the above-mentioned description described the example which installed the body temperature measuring apparatus 12 in the floor head base 31, you may install in arbitrary places, such as the head side of the bed 30. In addition, an example in which a body temperature measurement target is a patient in a hospital or the like and the body temperature data of a large number of patients is centrally managed via the network 24 has been described, but it should be used standalone without using an online function or ID information. Then, it can be used for measuring the body temperature of a sick person at home.
[0026]
【The invention's effect】
As described above, if the ear canal SAW thermometer and the body temperature management system using the thermometer of the present invention are implemented in a hospital, a nursing home or home care, etc., the ear canal SAW thermometer is simply inserted into the ear canal of the patient. Thus, there is an effect that accurate continuous measurement of body temperature data can be easily performed. In addition, the ear hole type SAW thermometer has no signal line, and further has no electronic circuit, battery, etc., and is very small, so that the movement of the body is not restricted. In addition, by creating a database of continuous body temperature data of a large number of patients via the network based on the ID information, the body temperature data for each patient can be centrally managed on the network.
[Brief description of the drawings]
FIG. 1 is a diagram showing a state in which an ear canal SAW thermometer of the present invention is inserted into an ear canal and a measuring method.
FIG. 2 is an example diagram showing the structure of a SAW thermometer device built in the ear canal SAW thermometer of the present invention.
FIG. 3 is a circuit block diagram of a body temperature measuring device in the ear canal type SAW thermometer and a body temperature management system using the thermometer of the present invention.
FIG. 4 is a state diagram in which ID setting is performed by blowing an ID setting fuse.
5 is a diagram showing a relationship between a data detection pulse signal and a reflected pulse signal in the body temperature measurement reflector of FIG. 2. FIG.
6 is a diagram showing a relationship between a data detection pulse signal and a reflected pulse signal in the two-dot chain line portion of FIG.
7 is a diagram showing a positional relationship of reflected pulse signals from an ID reflector in the ID pattern of FIG.
FIG. 8 is a diagram showing an embodiment in which the ear canal SAW thermometer and the body temperature management system using the body thermometer of the present invention are applied to a body temperature management system for a patient in a hospital.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Ear hole type SAW thermometer 2 Casing 3 SAW thermometer device 4 Board | substrate 5 IDT
6 antenna 7 body temperature measuring reflector 8 ID reflector 9 ID setting fuse 10 ear hole 11 eardrum 12 body temperature measuring device 13 antenna 14 pulse transmitting / receiving unit 15 pulse generating unit 16 amplifying unit 17 phase or amplitude detecting unit 18 constant temperature bath 19 reference SAW device Or the reference pulse generation circuit 20 Data processing unit 21 Network communication unit 22 Memory unit 23 Monitor unit 24 Network 25 Server 26 Monitor device 27 Curtain 28 Patient room 29 Patient 30 Bed 31 Floor head stand

Claims (1)

体温データを計測するための体温計測定リフレクタとＩＤ情報情報を取得するためのＩＤ用リフレクタとデータ検出パルス信号の受信及び反射パレス信号の送信を行なうためのＩＤＴを有したＳＡＷ体温計デバイス及びアンテナをケーシングに内蔵し、人体の耳孔内に挿着してコードレスで体温測定が行なえることを特徴とした、耳孔式ＳＡＷ体温計。A thermometer measuring reflector for measuring body temperature data, an ID reflector for acquiring ID information information, an SAW thermometer device having an IDT for receiving a data detection pulse signal and transmitting a reflection palace signal, and an antenna casing An ear canal type SAW thermometer, which is built in and can be inserted into the ear canal of a human body to perform cordless body temperature measurement.
JP2002276908A 2002-09-24 2002-09-24 Ear hole type SAW thermometer and body temperature management system using the thermometer Expired - Fee Related JP4231953B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105266768A (en) * 2015-02-11 2016-01-27 深圳市滴滴测科技有限公司 Infrared ear-temperature continuous measuring device and method for measuring ear temperature
CN105266770A (en) * 2015-05-20 2016-01-27 上海温尔信息科技有限公司 Household electronic thermometer
CN106384487A (en) * 2016-11-25 2017-02-08 重庆机械电子高级技工学校 Student go-to-bed intelligent management system based on Internet of Thing

Families Citing this family (299)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US7946762B2 (en) 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8100583B2 (en) 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US9297705B2 (en) * 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
KR101203812B1 (en) * 2011-09-07 2012-11-22 인하대학교 산학협력단 Apparatus for measurement of dizziness posture and Apparatus for dizziness therapy
CN102988027A (en) * 2011-09-09 2013-03-27 北京大学深圳研究生院 Multiple chip package (MCP) form of thermistor and wireless body temperature detection circuit
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
CN104586348A (en) * 2013-10-31 2015-05-06 赖弘基 Eye temperature measuring and analyzing system, receiving and analyzing device and method thereof
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
CN105877714A (en) * 2014-11-28 2016-08-24 郭云 Intelligent electronic body temperature detecting device with dynamic value and curve display function
KR102263121B1 (en) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. Semiconductor device and manufacuring method thereof
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (en) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. Method of forming metal interconnection and method of fabricating semiconductor device using the same
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
WO2018004111A1 (en) * 2016-06-30 2018-01-04 주식회사 엠트리케어 User terminal, service providing device, body temperature information collection and service providing system using smart thermometer, and service providing method using same
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (en) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (en) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. Exhaust apparatus and substrate processing apparatus and thin film fabricating method using the same
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
KR102597978B1 (en) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. Storage device for storing wafer cassettes for use with batch furnaces
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
TWI811348B (en) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
TWI816783B (en) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
CN112292477A (en) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
JP2021529254A (en) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
KR20200002519A (en) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (en) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming device structure using selective deposition of gallium nitride, and system for the same
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
KR102638425B1 (en) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for filling a recess formed within a substrate surface
JP2020136677A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic accumulation method for filing concave part formed inside front surface of base material, and device
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
JP2020133004A (en) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Base material processing apparatus and method for processing base material
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (en) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 Method of forming topologically controlled amorphous carbon polymer films
TW202113936A (en) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
TW202115273A (en) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
JP2021097227A (en) 2019-12-17 2021-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming vanadium nitride layer and structure including vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
JP2021109175A (en) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー Gas supply assembly, components thereof, and reactor system including the same
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
TW202146882A (en) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (en) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 System dedicated for parts cleaning
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
CN113394086A (en) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 Method for producing a layer structure having a target topological profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
CN113555279A (en) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 Method of forming vanadium nitride-containing layers and structures including the same
TW202146831A (en) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vertical batch furnace assembly, and method for cooling vertical batch furnace
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
TW202147383A (en) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
KR20210145080A (en) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Apparatus for depositing thin films using hydrogen peroxide
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
KR20220010438A (en) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
TW202212623A (en) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming metal silicon oxide layer and metal silicon oxynitride layer, semiconductor structure, and system
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
TW202217037A (en) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

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