JP4134900B2 - Electronic device package - Google Patents

Description

  The present invention relates to an electronic device package including an electronic device in a sealed internal space and a manufacturing method thereof.

  Conventionally, as a technique for protecting semiconductor elements, surface acoustic wave elements, and other various electronic elements from the effects of moisture, oxygen, etc. present in the atmosphere, the electronic elements are stored inside the container and the container is sealed. A technique for sealing an electronic element is known.

In Patent Document 1, in the manufacture of an electronic circuit module that stores circuit components in a sealed space, the circuit components are mounted on a box-shaped case in which a flexible circuit board on which circuit components such as resistors and capacitors are mounted is attached to the inner surface. There has been disclosed a technique for effectively utilizing a gap portion inside a case by fitting a hard circuit board with a mounted surface facing inward.
JP-A 61-278198

  By the way, with the recent miniaturization of electronic devices, the miniaturization of electronic elements has progressed, and further increase in the density of the arrangement of minute electronic elements is also required. The electronic circuit module disclosed in Patent Document 1 is based on the premise that the flexible circuit board is housed inside the container. Therefore, the flexible circuit board is relatively thick with respect to minute electronic components such as bare IC chips. Therefore, it is difficult to increase the density and reduce the size of the package in accordance with the miniaturization of electronic elements.

  The present invention has been made in view of the above problems, and an object thereof is to provide an electronic element package suitable for high-density arrangement of minute electronic elements.

The invention according to claim 1 has an external electrode on the outer surface, an internal electrode on the inner surface, connects the external electrode and the internal electrode through vias, and bumps an electronic element to the internal electrode A connected top lid member;
An outer electrode on the outer surface, an inner electrode on the inner surface, the external electrode and the internal electrode are connected via vias, and a lower lid member in which an electronic element is connected to the internal electrode by a bump;
It comprises a plurality of side wall members, and at least one side wall member has an external electrode on its outer surface, an internal electrode on its inner surface, and the external electrode and the internal electrode are connected via vias, and A cylindrical member for connecting the upper lid member and the lower lid member , wherein the electronic element is connected to the internal electrode by a bump ,
A metal part that is provided on the cylindrical member and seals the internal space by bonding the upper lid member and the lower lid member and the cylindrical member;
The metal part is made of gold, and an electronic device package is used in which the internal space is filled with a reduced pressure state or an inert gas.

  In the present invention, the structure of the electronic element package can be made suitable for high-density arrangement of minute electronic elements.

  In the inventions of claims 2 to 4 and claims 13 and 14, an electronic element package can be easily manufactured.

  In the invention of claim 5, the manufacturing cost of the electronic device package can be reduced.

  In the inventions of claims 6 and 15, the container body and the lid can be bonded at a low temperature.

  FIG. 1 is a cross-sectional view showing a configuration of an electronic device package 1 according to a first embodiment of the present invention. The electronic element package 1 is a package in which a semiconductor element 61 as an electronic element is sealed (that is, a package in which an electronic element is provided in a sealed space), and includes two semiconductor elements 61 and 2. The container 10 which forms the internal space 11 which accommodates the one semiconductor element 61 is provided.

  FIG. 2 is an exploded perspective view showing the electronic device package 1. The container 10 closes the tubular member 4 having openings at both ends in the Z direction, the upper lid member 2 that closes the (+ Z) side opening of the tubular member 4, and the (−Z) side opening of the tubular member 4. A lower lid member 3 is provided. The upper lid member 2, the lower lid member 3, and the cylindrical member 4 are formed of resin. Metal parts 511 and 521 formed of gold (Au) are provided on the (+ Z) side and (−Z) side end faces of the cylindrical member 4, respectively. Further, the (−Z) side surface of the upper lid member 2 (the surface forming the upper surface of the internal space 11, hereinafter referred to as “upper surface”) 21, and the (+ Z) side surface of the lower lid member 3. Metal portions 512 and 522 formed of gold are formed in the region of the surface 31 (which is a surface forming the lower surface of the internal space 11 and hereinafter referred to as “lower surface”) 31 to which the tubular member 4 is bonded. Are provided respectively. One semiconductor element 61 is mounted on each of the upper surface 21 and the lower surface 31 of the internal space 11.

  As shown in FIG. 1, in the electronic device package 1, the metal parts 521 and 522 are joined to form the metal layer 52, whereby the tubular member 4 and the lower lid member 3 are bonded, and the metal part 511. And 512 are joined to form the metal layer 51, whereby the tubular member 4 and the upper lid member 2 are bonded. Thus, the upper lid member 2 and the lower lid member 3 are attached by closing the openings at both ends of the cylindrical member 4, so that the inner space is defined by the surfaces facing the inner sides of the upper lid member 2, the lower lid member 3, and the cylindrical member 4. 11 is formed, and the inner surface 41 of the tubular member 4 forms the side surface of the internal space 11. In the following description, the surface 41 is referred to as a “side surface”.

  The upper lid member 2 is formed on the internal electrode 22 formed on the upper surface 21 of the internal space 11 and the (+ Z) side surface (that is, the outer surface of the container 10 and the outer surface of the upper surface 21) 211. The internal electrode 22 and the external electrode 23 are electrically connected by a via 24 penetrating the upper lid member 2. The semiconductor element 61 mounted on the upper surface 21 is electrically connected to the external electrode 23 through the internal electrode 22 and the via 24.

  The lower lid member 3 is formed on the internal electrode 32 formed on the lower surface 31 and the (−Z) side surface (that is, the outer surface of the container 10 and the outer surface of the lower surface 31) 311. The multilayer substrate includes an external electrode 33, and the internal electrode 32 and the external electrode 33 are electrically connected by a via 34 that penetrates the lower lid member 3. The semiconductor element 61 mounted on the lower surface 31 is electrically connected to the external electrode 33 through the internal electrode 32 and the via 34.

  The semiconductor element 61 is a so-called IC bare chip, and metal bumps 62 formed on lands on the mounting surface of the semiconductor element 61 are formed on the internal electrode 22 of the upper lid member 2 or the internal electrode 32 of the lower lid member 3. It is mounted on the upper lid member 2 or the lower lid member 3 by being electrically joined.

  FIG. 3 is a diagram illustrating a manufacturing process of the electronic element package 1. When the electronic device package 1 is manufactured, first, gold plating is applied to the bonding portions of the upper lid member 2, the lower lid member 3, and the tubular member 4 to form metal parts 512, 522, 511, and 521. (Step S11).

  Subsequently, the upper lid member 2, the lower lid member 3, the cylindrical member 4 and the two semiconductor elements 61 were carried into the load lock of the bonding apparatus, and the pressure inside the load lock was reduced by a vacuum pump connected to the load lock. After that, it is carried into a chamber that has been previously in a reduced pressure state (preferably in a vacuum state) and placed at a predetermined position. Next, in a reduced pressure (vacuum) environment in the chamber, a fast atom beam (hereinafter referred to as “FAB”) of argon (Ar) is applied to the bumps 62 of one semiconductor element 61 and the internal electrode 22 of the upper lid member 2. The surface of the bump 62 and the internal electrode 22 is cleaned (that is, unnecessary substances on the surface are removed and the surface is activated) (step S12). At this time, the temperature of the bump 62 and the internal electrode 22 is preferably set to room temperature or higher and 150 ° C. or lower from the viewpoint of promoting activation of the surface and preventing damage to the semiconductor element 61 due to high temperature heating. And heated by laser light irradiation. Thereafter, the semiconductor element 61 is mounted on the upper lid member 2 by metal bonding for bringing the bump 62 and the internal electrode 22 into contact with each other (step S13).

  Similarly, another semiconductor element 61 is irradiated with FAB on the bumps 62 of the semiconductor element 61 and the internal electrode 32 of the lower lid member 3 in a reduced pressure (vacuum) environment (step S14). The electrodes 32 are mounted on the lower lid member 3 by metal bonding that brings them into contact with each other (step S15). Note that bumps instead of the bumps 62 may be formed on the internal electrode 22 and the internal electrode 32 in advance. In this case, the lands and bumps of the semiconductor element 61 are bonded after being cleaned by FAB. Further, the mounting of the semiconductor element 61 on the upper lid member 2 may be performed after the mounting on the lower lid member 3.

  When the semiconductor element 61 is mounted on each of the upper lid member 2 and the lower lid member 3, the metal portion 522 of the lower lid member 3 and the (−Z) of the cylindrical member 4 in a reduced pressure (vacuum) environment in the chamber. The metal part 521 on the side is irradiated with FAB, and the surfaces of both metal parts are cleaned (step S16). At this time, both the metal parts are heated by laser light irradiation or the like as necessary so that the temperature is not lower than room temperature and not higher than 150 ° C. Subsequently, by bringing the metal part 522 and the metal part 521 into contact with each other, the metal parts are joined to each other to form the metal layer 52, and the lower lid member 3 and the tubular member 4 are bonded (step S17). ).

  Next, in a reduced pressure (vacuum) environment, the metal part 512 of the upper lid member 2 and the metal part 511 on the (+ Z) side of the tubular member 4 are irradiated with FAB, and the surfaces of both metal parts are cleaned (step) S18). At this time, both the metal parts are heated by laser light irradiation or the like as necessary so that the temperature is not lower than room temperature and not higher than 150 ° C. Thereafter, the metal part 512 and the metal part 511 are brought into contact with each other, whereby the metal parts are metal-bonded to form the metal layer 51. The cylindrical member 4 whose upper side on the (−Z) side is closed by the lower lid member 3 and the upper lid member 2 are bonded by a metal layer 51, and the internal space 11 in which the two semiconductor elements 61 are accommodated is decompressed (vacuum). ) In a closed state (step S19).

  As described above, the container 10 is formed by bonding the lower lid member 3, the upper lid member 2, and the cylindrical member 4 with the two mounted semiconductor elements 61 facing inward (inside the internal space 11). The electronic element package 1 is manufactured. The mounting of the semiconductor element 61 and the joining of each metal part may be performed in an inert gas environment. In this case, an inert gas is sealed in the internal space 11 in which the semiconductor element 61 is sealed. Is done. Further, the inside of the chamber may be depressurized at the time of sealing in an inert gas environment (from atmospheric pressure to 1 Pa (pascal) to 10 Pa may be reduced).

  In the electronic element package 1, the semiconductor element 61 and the external electrode 23 mounted on the upper surface 21 and the semiconductor element 61 and the external electrode 33 mounted on the lower surface 31 are electrically connected to each other. By mounting 1 on the external substrate, the external substrate and the two semiconductor elements 61 are electrically connected. For example, the external element 33 is connected to an electrode on the external substrate through an anisotropic conductive resin film, and the external electrode 23 is connected to an electrode on the external substrate by wire bonding. As a result, the plurality of electronic device packages 1 are arranged on the external substrate at a high density.

  As described above, in the electronic element package 1, since the two semiconductor elements 61 are directly mounted on the upper lid member 2 and the lower lid member 3 which are multilayer substrates on which external electrodes are formed, the package structure is very small. The electronic device can be suitable for high-density arrangement of electronic devices. Further, the opening 10 at both ends of the cylindrical member 4 is closed by the upper lid member 2 and the lower lid member 3 on which the semiconductor elements 61 are mounted, so that the container 10 is formed. Are mounted on the two opposing surfaces (upper surface 21 and lower surface 31), the electronic element package 1 can be easily manufactured.

  In the electronic element package 1, the tubular member 4, the upper lid member 2, and the upper cover member 2 at a lower temperature than those obtained by welding or the like (lower temperature than normal solder or glass powder bonding, preferably from room temperature to 150 ° C.). The lower lid member 3 is bonded to each other, and the internal space 11 in which the semiconductor element 61 is accommodated is sealed. As a result, even the semiconductor element 61 having low heat resistance can be stored in the internal space 11 at a low temperature without being damaged by heat. In addition, the lower cover member 2, lower cover member 3, and cylindrical member 4 made of resin, which have lower heat resistance than ceramics and metals, but are inexpensive, can be used, and the manufacturing cost of the electronic element package 1 is reduced. Can do.

  In the electronic element package 1, the metal parts are bonded by a strong bonding force between atoms, so that the reliability of adhesion between the members can be improved and the internal space 11 having high hermeticity can be formed. Further, since the metal layers 51 and 52 are made of chemically stable (not easily chemically changed) gold, the reliability of sealing the internal space 11 is improved.

  Furthermore, since the internal space 11 is in a reduced pressure (vacuum) state or an inert gas atmosphere, the semiconductor element 61 can be protected from the influence of moisture, oxygen, etc. existing in the atmosphere. Performance degradation can be suppressed. Thus, the electronic element package 1 is suitable for sealing the semiconductor element 61 having low heat resistance and low moisture resistance.

  FIG. 4 is a cross-sectional view showing a configuration of an electronic element package 1a according to the second embodiment of the present invention. The electronic element package 1a includes a resin-made cylindrical member 4a on which two semiconductor elements 61 are mounted, instead of the cylindrical member 4 of the electronic element package 1 shown in FIG. Other configurations are the same as those in FIG. 1, and the same reference numerals are given in the following description. As shown in FIG. 4, in the electronic element package 1 a, the upper surface 21 and the lower surface 31 of the internal space 11 and two surfaces (hereinafter referred to as “mounting side surfaces”) 410 that are substantially perpendicular to the X direction among the side surfaces. A total of four semiconductor elements 61 are mounted, one for each.

  FIG. 5 is an exploded perspective view showing the tubular member 4a and the semiconductor element 61 mounted on the tubular member 4a. The cylindrical member 4 a includes two side wall members 45 on which one semiconductor element 61 is mounted, and two connection members 46 that connect the two side wall members 45. A metal portion 531 formed of gold (Au) is provided in a region of the mounting side surface 410 of the side wall member 45 to which the connection member 46 is bonded. Similarly, metal parts 532 formed of gold (Au) are also provided on both end faces in the X direction, which are adhesion parts of the connection member 46, and the metal part 531 and the metal part 532 are metal-bonded to form a side wall member. 45 and the connecting member 46 are bonded together to form the tubular member 4a.

  The side wall member 45 is a flat multilayer substrate formed of resin, and is formed on the inner electrode 42 formed on the mounting side surface 410 and the outer surface 411 of the mounting side surface 410 as shown in FIG. The external electrode 43 is provided, and the internal electrode 42 and the external electrode 43 are electrically connected by a via 44 penetrating the side wall member 45. In the tubular member 4 a, the semiconductor element 61 is mounted on the side wall member 45 so that it is electrically connected to the external electrode 43.

  FIG. 6 is a diagram showing a part of the manufacturing process of the electronic element package 1a. When the electronic device package 1a is manufactured, the steps shown in FIG. 6 are performed prior to the steps S12 to S19 in FIG. First, gold plating is applied to the adhesion portions of the side wall member 45 and the connection member 46 shown in FIG. 5 to form metal portions 531 and 532 (step S21).

  Subsequently, the gold plating is applied to the bonding portions of the upper lid member 2 and the lower lid member 3 shown in FIG. 4 to form the metal portions 512 and 522. Further, the side wall member 45 forming the cylindrical member 4a and the end surface in the Z direction of the connection member 46 (the portion corresponding to the bonding portion of the cylindrical member 4a when bonded to each other to form the cylindrical member 4a) are gold-plated. Are applied to form metal parts 511 and 521 (more precisely, metal parts that become annular metal parts 511 and 521 when cylindrical member 4a is formed) (step S22).

  When the formation of each metal part is completed, the upper lid member 2, the lower lid member 3, the side wall member 45, the connection member 46, and the four semiconductor elements 61 are previously in a reduced pressure (vacuum) state via the load lock of the bonding apparatus. The bumps 62 of the two semiconductor elements 61 and the internal electrodes 42 of the two side wall members 45 are irradiated with FAB to clean the surface (step S23). Thereafter, one semiconductor element 61 is mounted on each of the mounting side surfaces 410 of the two side wall members 45 by metal bonding in which the bump 62 and the internal electrode 42 are brought into contact with each other (step S24).

  Subsequently, in a reduced pressure (vacuum) environment in the chamber, the metal parts 531 and 532 of the side wall member 45 shown in FIG. 5 are irradiated with argon FAB, and the surfaces of both metal parts are cleaned (step S25). At this time, both the metal parts are heated by laser light irradiation or the like as necessary so that the temperature is not lower than room temperature and not higher than 150 ° C. Next, the metal part 531 and the metal part 532 are brought into contact with each other and the work of metal joining the two metal parts is repeated, whereby the two side wall members 45 and the two connection members 46 are sequentially bonded to form the cylindrical member 4a. (Step S26).

  Thereafter, the FAB is irradiated to the bumps 62 of one of the two unmounted semiconductor elements 61 and the internal electrode 22 of the upper lid member 2 (FIG. 3: step S12). Are bonded to each other and the semiconductor element 61 is mounted on the upper lid member 2 (step S13). Similarly, the bump 62 of the other semiconductor element 61 and the internal electrode 32 of the lower lid member 3 are irradiated with FAB (step S14), and the bump 62 and the internal electrode 32 are metal-bonded to bring the semiconductor element 61 down. It is mounted on the lid member 3 (step S15).

  Subsequently, the metal part 522 of the lower lid member 3 and the metal part 521 of the cylindrical member 4a are irradiated with FAB (step S16), and both the metal parts are metal-bonded to form the lower lid member 3 and the cylindrical member 4a. Is bonded (step S17). Then, the metal part 512 of the upper lid member 2 and the metal part 511 of the cylindrical member 4a are irradiated with FAB (step S18), both the metal parts are metal-bonded, and the upper lid member 2 and the cylindrical member 4a are bonded. The internal space 11 in which the four semiconductor elements 61 are accommodated is sealed in a reduced pressure (vacuum) state (step S19). As described above, the lower lid member 3, the upper lid member 2, and the two side wall members 45 are bonded to each other or the connection member 46 while the mounted semiconductor element 61 faces the inner side (inside the internal space 11). Thus, the container 10 is formed, and the electronic element package 1a in which the four semiconductor elements 61 are accommodated is manufactured.

  The mounting of the semiconductor element 61 on the lower lid member 3 and the upper lid member 2 may be performed prior to the bonding of the side wall member 45 and the connection member 46, and the order of mounting on each member is appropriately changed. May be. The upper lid member 2 and the lower lid member 3 may be bonded to the cylindrical member 4a under an inert gas environment. In this case, the internal space 11 is filled with an inert gas. Further, the inside of the chamber may be depressurized (sealed from atmospheric pressure to 1 Pa (pascal) to 10 Pa may be sufficient) during sealing in an inert gas environment.

  As described above, in the electronic device package 1a, the upper surface 21, the lower surface 31 and the side surface 41 (mounting side surface 410) of the internal space 11 formed by combining the four semiconductor elements 61 with the multilayer substrate on which the external electrodes are formed. ), The package structure can be more suitable for high-density arrangement of minute electronic elements. Further, since the container 10 is formed by adhering each member after the semiconductor element 61 is mounted on the upper cover member 2, the lower cover member 3, and the side wall member 45, which are flat members, the semiconductor element 61 is easily placed inside the container 10. The electronic device package 1a can be easily manufactured.

  Similarly to the electronic element package 1, the electronic element package 1a can be housed in the internal space 11 at a low temperature without being damaged by heat even if the semiconductor element 61 has low heat resistance, and is made of an inexpensive resin. By making the members usable, the manufacturing cost of the electronic element package 1a can be reduced.

  Furthermore, the semiconductor element 61 can be protected from the influence of moisture, oxygen, etc. existing in the atmosphere by setting the internal space 11 to a reduced pressure (vacuum) state or an inert gas atmosphere. In addition, since each member forming the container 10 is bonded by bonding between atoms of each metal part formed of gold, not only the internal space 11 having high hermeticity can be formed, but also the internal space 11 The reliability of sealing is also improved.

  FIG. 7 is a cross-sectional view showing a configuration of an electronic device package 1b according to the third embodiment of the present invention. The electronic element package 1b is the same as the electronic element package 1 shown in FIG. 1 except that the mounting method of the semiconductor element 61 is different, and the same reference numerals are given in the following description.

  In the electronic device package 1 b shown in FIG. 7, the two semiconductor devices 61 are mounted on the respective surfaces via the thermosetting resin 7 provided on the upper surface 21 and the lower surface 31 of the internal space 11.

  FIG. 8 is a diagram showing a mounting process of the semiconductor element 61 in the manufacturing process of the electronic element package 1b, and corresponds to steps S12 to S15 in FIG. In the electronic device package 1b shown in FIG. 7, first, the resin 7 is applied on the internal electrode 22 of the upper lid member 2 and the internal electrode 32 of the lower lid member 3 (step S31). The resin 7 is an anisotropic conductive resin film (ACF (Anisotropic Conductive Film)) formed of an insulating resin in which conductive particles are uniformly dispersed inside. One semiconductor element 61 is pressed and heated from above the resin 7 applied on the upper lid member 2 to be fixed to the upper lid member 2, and the bump 62 is interposed between the internal electrode 22 and the conductive particles in the resin 7. Then, it is mounted on the upper lid member 2 by being electrically joined (step S32). Similarly, the other semiconductor element 61 is pressed and heated from above the resin 7 applied to the lower lid member 3 so that the bumps 62 are connected to the internal electrode 32 and mounted on the lower lid member 3 (step). S33). In this case, the semiconductor element 61 need not be mounted in the chamber.

  As the resin 7, anisotropic conductive resin paste (ACP (Anisotropic Conductive Paste)), non-conductive resin film (NCF (Non-Conductive Film)), or non-conductive resin paste (NCP (Non-Conductive Paste)). )) May be used, and these resins may have a property of being cured by a treatment other than the heat treatment. In any case, since the semiconductor element 61 can be directly mounted on the upper lid member 2 and the lower lid member 3 that are multilayer substrates on which external electrodes are formed, the structure of the electronic element package 1b can be reduced to a minute electronic element. It can be suitable for a high density arrangement.

  FIG. 9 is a cross-sectional view showing a configuration of an electronic device package 1c according to the fourth embodiment of the present invention. An electronic element package 1c is a member having a cavity (recessed portion) 13 (hereinafter referred to as "cavity") instead of the cylindrical member 4, the lower lid member 3 and the metal layer 52 for bonding both members of the electronic element package 1 shown in FIG. Substrate)) 12. Other configurations are the same as those in FIG. 1, and the same reference numerals are given in the following description. In the electronic device package 1c, the cavity substrate 12 and the upper lid member 2 are bonded to form the container 10.

  The cavity substrate 12 is formed by laminating a ceramic layer serving as a side wall on a flat ceramic substrate serving as a bottom. Usually, a plurality of cavities are formed in a lattice pattern on one ceramic substrate, and the cavity substrate 12 is formed by cutting the substrates.

  The bottom and side walls of the cavity substrate 12 play the same role as the lower lid member 3 and the cylindrical member 4 shown in FIG. 1, respectively, and the bottom surface of the cavity 13 (the (+ Z) side surface of the bottom of the cavity substrate 12, that is, A semiconductor element 61 is mounted on the lower surface 31) of the internal space 11. In the electronic element package 1 c, another semiconductor element 61 is mounted on the (−Z) side surface of the upper lid member 2, that is, the surface that becomes the upper surface 21 of the internal space 11 and closes the opening of the cavity 13. In this state, the upper lid member 2 and the cavity substrate 12 are bonded by the metal layer 51 by the same method (steps S18 and S19 in FIG. 3) as in the first embodiment, so that the internal space 11 is sealed. Formed. For this reason, the electronic element package 1c can be manufactured easily. The mounting of the semiconductor element 61 may be performed by metal bonding as in the first embodiment, or may be performed via a resin as in the third embodiment.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the upper lid member 2, the lower lid member 3, and the cylindrical member 4 are preferably formed of a resin from the viewpoint of manufacturing cost reduction, but may be formed of other materials such as metal or ceramic. Moreover, although the metal part which adhere | attaches each member which forms the container 10 is preferable to form with gold | metal | money from a viewpoint of the reliability improvement of the sealing of the internal space 11, it may be formed with other various metals.

  In the above embodiment, argon is used as the FAB, but other atoms such as nitrogen and hydrogen can also be used as the FAB. Further, instead of FAB, the metal part and the electrode may be cleaned by other energy waves such as an ion beam.

  The container 10 does not necessarily have to be formed by bonding the members having the shapes shown in the above embodiment, and may be formed by bonding members having other various shapes. For example, the internal space 11 may be formed by bonding two substrates each having a cavity structure so as to close the opening of the cavity. Moreover, adhesion | attachment of members may be performed by the adhesive agent etc. which have resin as a main component.

  The mounting of the semiconductor element 61 may be performed by a method other than the above. For example, the bump is formed by applying ultrasonic vibration while the semiconductor element 61 is pressed while the bump 62 and the internal electrode 22 are in contact with each other. 62 and the internal electrode 22 may be joined and mounted. Further, the surface of the container 10 on which the plurality of semiconductor elements 61 are mounted is not limited to the combination shown in the above embodiment, and may be changed as appropriate. That is, by mounting electronic elements on at least one of the upper surface 21, the lower surface 31 and the four side surfaces 41 of the internal space 11 and the other surface, a high-density arrangement of minute electronic elements is realized. .

  The electronic element package 1 can also be used as an electronic element package that houses various types of electronic elements other than semiconductor elements, such as SAW (Surface Acoustic Wave) filters.

  The present invention can be used in an electronic device package that houses a semiconductor device and various other types of electronic devices.

Sectional drawing which shows the structure of the electronic element package which concerns on 1st Embodiment An exploded perspective view showing an electronic device package Diagram showing manufacturing process of electronic device package Sectional drawing which shows the structure of the electronic element package which concerns on 2nd Embodiment The exploded perspective view which shows the semiconductor element mounted in a cylindrical member and a cylindrical member Diagram showing manufacturing process of electronic device package Sectional drawing which shows the structure of the electronic element package which concerns on 3rd Embodiment Diagram showing the mounting process of semiconductor elements Sectional drawing which shows the structure of the electronic element package which concerns on 4th Embodiment

Explanation of symbols

1, 1a, 1b, 1c Electronic device package 2 Upper lid member 3 Lower lid member 4, 4a Cylindrical member 7 Resin 10 Container 11 Internal space 12 Cavity substrate 13 Cavity 21 Upper surface 22, 32, 42 Internal electrodes 23, 33, 43 External Electrode 31 Lower surface 41 Side surface 51 Metal layer 61 Semiconductor element 62 Bump 211, 311, 411 Surface 511, 512 Metal part
Steps S11 to S19, S21 to S26, S31 to S33

Claims (1)

An external electrode on the outer surface, an internal electrode on the inner surface, the external electrode and the internal electrode are connected via vias, and an upper lid member in which an electronic element is connected to the internal electrode by a bump;
An outer electrode on the outer surface, an inner electrode on the inner surface, the external electrode and the internal electrode are connected via vias, and a lower lid member in which an electronic element is connected to the internal electrode by a bump;
It comprises a plurality of side wall members, and at least one side wall member has an external electrode on its outer surface, an internal electrode on its inner surface, and the external electrode and the internal electrode are connected via vias, and A cylindrical member for connecting the upper lid member and the lower lid member , wherein the electronic element is connected to the internal electrode by a bump ,
A metal part that is provided on the cylindrical member and seals the internal space by bonding the upper lid member and the lower lid member and the cylindrical member;
The electronic device package according to claim 1, wherein the metal part is made of gold, and the internal space is filled with a reduced pressure state or an inert gas.

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